Converter device layout diagram determination method and converter device

By generating device layout diagrams, optimizing the device types and layout methods of the three-level converter device, the problem of devices cannot be platformed and simplified in the prior art is solved, and cost reduction and cost-effectiveness improvement are achieved.

CN120030972APending Publication Date: 2025-05-23CRRC ZHUZHOU ELECTRIC LOCOMOTIVE RESEARCH INSTITUTE CO LTD
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Patent Information

Application Number
CN202311568829.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-11-22
Publication Date
2025-05-23

AI Technical Summary

Technical Problem

The existing three-level converter devices cannot achieve platformization and simplification, and the use of all SiC devices leads to high cost and low cost performance.

Method used

By obtaining the target requirements of the converter device, determining the device type and layout method, generating device layout diagrams, and optimizing the design to achieve platformization and simplification. Specific methods include using a hybrid method of silicon carbide devices and silicon devices, the inner tube is arranged in multiple parallel or single tubes, and the outer tube and clamping tube are arranged in a matrix.

Benefits of technology

It realizes the platformization and simplification of the converter device, reduces device costs, and improves device density and cost-effectiveness.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention belongs to the technical field of semiconductor devices, and particularly relates to a method for determining a device layout diagram of a converter device and the converter device. The method comprises the steps of obtaining a target requirement for the converter device; determining a device type and an arrangement mode of each device in the converter device according to the target requirement; and determining a device layout diagram of the converter device according to the arrangement mode and the device type. Free combination is achieved according to actual application requirements, optimal design is carried out on the converter device, and platformization and simplification of converter device products can be achieved.
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Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor devices, and specifically relates to a method for determining a device layout diagram of a current conversion device and a current conversion device. Background Art

[0002] The three-level converter is a device used to control the current in the power system. It can convert DC power into AC power, thereby achieving effective control and management of the power system. The three-level converter has various requirements in practical applications, and it is necessary to develop a variety of three-level converters. It is impossible to achieve platformization and simplification of the device. At the same time, the cost of the three-level converter using all-SiC devices is high, and the number of parallel devices required is too large, which makes the cost performance of the three-level converter very low. Summary of the invention

[0003] In response to the above technical problems, the present invention proposes a method for determining a device layout diagram of a converter and a converter. The present application obtains the target requirements for the converter; determines the device type and arrangement of each device in the converter according to the target requirements; and determines the device layout diagram of the converter according to the arrangement and the device type. The converter can be freely combined according to actual application requirements to optimize the design, and the converter product can be platformized and simplified.

[0004] In order to solve the above technical problems, the technical solution adopted by the present invention includes two aspects.

[0005] In a first aspect, a method for determining a device layout diagram of a converter device is provided, comprising: obtaining target requirements for the converter device; determining the device type and arrangement of each device in the converter device according to the target requirements; and determining the device layout diagram of the converter device according to the arrangement and the device type.

[0006] In some embodiments, the devices include: an inner tube, a clamping tube and an outer tube; the arrangement includes: multiple inner tubes are connected in parallel; the device types include: silicon devices and silicon carbide devices; the target requirements include: the inner tube needs to switch at a high frequency, and the outer tube and the clamping tube need to operate at a low frequency; the device type and arrangement of each device in the converter according to the target requirements include: when the target requirement requires the inner tube to switch at a high frequency, and the outer tube and the clamping tube need to operate at a low frequency, determining that the outer tube and the clamping tube are silicon devices, the inner tube is a silicon carbide device or a silicon device, and the arrangement is multiple inner tubes are connected in parallel.

[0007] In some embodiments, the device layout diagram determined according to the arrangement method and the device type includes: the outer tubes and the clamping tubes are arranged in a matrix to form a two-by-two matrix, and the outer tubes and the clamping tubes are each in a column; the inner tubes are arranged in columns longitudinally and close to a side of the matrix where the clamping tubes are located.

[0008] In some embodiments, the outer tube includes: an upper outer tube and a lower outer tube; the clamping tube includes: an upper clamping tube and a lower clamping tube, and the device layout diagram also includes: the upper outer tube and the upper clamping tube are located in the same row, and the AC side of the upper outer tube is adjacent to the DC side of the upper clamping tube; the lower outer tube and the lower clamping tube are located in the same row, and the DC side of the lower outer tube is adjacent to the AC side of the lower clamping tube; the drain or collector of the inner tube is close to the clamping tube.

[0009] In some embodiments, the device includes: an inner tube and an outer tube module; the arrangement includes: multiple inner tubes in parallel; the device types include: silicon devices and silicon carbide devices; the target requirements include: the inner tube needs to be a low-frequency switch, and the outer tube module needs to operate at a high frequency; the device type and arrangement of each device in the converter is determined according to the target requirements, including: when the target requirement requires the inner tube to be a low-frequency switch, and the outer tube module needs to operate at a high frequency, determining that the outer tube module is a silicon carbide device, the inner tube is a silicon device, and the arrangement is a single inner tube.

[0010] In some embodiments, the outer tube module includes: an upper outer tube module and a lower outer tube module; the device layout diagram also includes: arranging the upper outer tube module and the lower outer tube module in a row from top to bottom, and the AC side of the upper outer tube module and the AC side of the lower outer tube module are located on the same side; the inner tubes are arranged in rows, and each of the inner tubes has the same orientation, with the collector facing the AC side of the upper outer tube module or the lower outer tube module.

[0011] In the second aspect, the present application proposes a current conversion device, including: a heat sink, a power device, a low-inductance busbar, an AC side quick connector, a DC side quick connector, a support assembly, a control box and a pulse drive integrated board; the power device is arranged on one side of the heat sink according to the device layout diagram generated by any method described in the first aspect; the AC side quick connector is installed on the heat sink and electrically connected to the low-inductance busbar, and is used to output the AC power output by the power device to the load; the DC side quick connector is arranged on the heat sink and electrically connected to the low-inductance busbar, and is used to input DC power to the power device; one end of the support assembly is installed on the heat sink, and the other end is connected to the control box, and is used to install the control box and the heat sink together; the drive integrated board is installed in the control box and is electrically connected to the power device, and is used to control the opening and closing of the power device.

[0012] In some embodiments, when the power device is arranged on the heat sink according to the device layout diagram determined by any method described in the first aspect, the low-inductance busbar includes: a first low-inductance busbar and an AC copper busbar; the AC copper busbar is connected to the AC side quick connector and is electrically connected to the output end of the inner tube, and is used to output the AC power generated by the inner tube to the AC side quick connector; the first low-inductance busbar is connected to the DC side quick connector, and is simultaneously connected to the input and output ends of the outer tube and the clamping tube, and is also connected to the input end of the inner tube.

[0013] In some embodiments, the first low-inductance busbar includes: a DC connection part, a DC transfer busbar and a device overlap part; the DC connection part is provided with at least 4 connection blocks, which are connected to the DC side quick connector; the DC connection part includes at least 2 neutral potential connection blocks, a high potential connection block and a low potential connection block; the device overlap part includes a plurality of connection ports and at least three connection layers, wherein the connection layers are a neutral potential layer, a high potential layer and a low potential layer respectively; the connection port arranged in the high potential layer is connected to the positive input terminal of the upper outer tube; the connection port arranged in the neutral potential layer is connected to the negative input terminal of the upper clamping tube and the positive input terminal of the lower clamping tube; the connection port arranged in the low potential layer is connected to the negative input terminal of the lower outer tube. Connection; the DC transfer busbar includes at least 4 connection bars, including at least two neutral potential connection bars, one high potential connection bar and one low potential connection bar; the 4 connection bars are arranged in two layers, and the high potential connection bar is diagonally arranged with the low potential connection bar; one end of the two neutral potential connection bars are respectively connected to the two neutral potential connection blocks of the DC connection part, and the other end is connected to the neutral potential layer of the device overlapping part; one end of the high potential connection bar is connected to the high potential connection block of the DC connection part, and the other end is connected to the high potential layer of the device overlapping part; one end of the low potential connection bar is connected to the low potential connection block of the DC connection part, and the other end is connected to the low potential layer of the device overlapping part.

[0014] In some embodiments, when the power device is arranged on the heat sink according to the device layout diagram determined by the method of any one of claims 5-6, the low-inductance busbar includes: a second low-inductance busbar and a third low-inductance busbar; the second low-inductance busbar is connected to the DC side quick connector, and is also connected to the input ends of the upper outer tube module and the lower outer tube module; the third low-inductance busbar is connected to the output ends of the upper outer tube module and the lower outer tube module, and is also connected to the input and output ends of the inner tube, and is also connected to the AC side quick connector.

[0015] In some embodiments, the second low-inductance busbar includes: a DC connection part, a DC transfer busbar and a device connection part; the DC connection part includes at least five connection terminals, which are connected to the DC side quick connector, wherein the connection terminals include at least two neutral potential connection terminals, one high potential connection terminal and one low potential connection terminal; the five connection terminals form a terminal row; when the high potential connection terminal is located in the middle position, there are two low potential connection terminals, which are respectively arranged at both ends of the terminal row; when the low potential connection terminal is located in the middle position, there are two high potential connection terminals, which are respectively arranged at both ends of the terminal row; The device overlap portion includes at least a plurality of connection ports and at least three connection layers, wherein the three connection layers are respectively a high potential layer, a low potential layer and a neutral potential layer; the connection port arranged at the high potential layer is connected to the positive input terminal of the upper outer tube module; the connection port arranged at the neutral potential layer is connected to the negative input terminal of the upper outer module and the positive input terminal of the lower outer tube module; the connection port arranged at the low potential layer is connected to the negative input terminal of the lower outer tube module; the DC transfer busbar includes at least five connection bars, one end of each of the connection bars is connected to a connection terminal of the DC connection part, and the other end is connected to the connection layer corresponding to the connection terminal.

[0016] In some embodiments, the two sides of the heat sink are arranged with the same structure, so that the inverter becomes a double-sided inverter.

[0017] Beneficial effects of the invention: The present application obtains target requirements for the converter; determines the device type and arrangement of each device in the converter according to the target requirements; and determines the device layout diagram of the converter according to the arrangement and the device type. The converter can be freely combined according to actual application requirements to optimize the design of the converter, and the converter product can be platformized and simplified. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The scope of the present disclosure may be better understood by reading the following detailed description of exemplary embodiments in conjunction with the accompanying drawings. The drawings included are:

[0019] Figure 1 An overall flow chart of a method for determining a device layout diagram of a converter provided in an embodiment of the present application;

[0020] Figure 2 A schematic diagram of a device with multiple inner tubes connected in parallel provided in an embodiment of the present application;

[0021] Figure 3 A device layout diagram of multiple parallel inner tubes provided in an embodiment of the present application;

[0022] Figure 4A schematic diagram of a device with a single inner tube provided in an embodiment of the present application;

[0023] Figure 5 A device layout diagram of a single inner tube provided in an embodiment of the present application;

[0024] Figure 6 A schematic diagram of the structure of an inner tube multi-parallel current conversion device provided in an embodiment of the present application;

[0025] Figure 7 A schematic structural diagram of a double-sided pasted inner tube multi-parallel current conversion device provided in an embodiment of the present application;

[0026] Figure 8 A schematic diagram of the structure of an inner tube single tube flow converter provided in an embodiment of the present application;

[0027] Fig. 9 A schematic structural diagram of a double-sided inner tube single-tube current converter provided in an embodiment of the present application;

[0028] Fig.10 A schematic diagram of the structure of a first low-sensitivity busbar provided in an embodiment of the present application;

[0029] Fig.11 A schematic diagram of the structure of a second low-sensitivity busbar provided in an embodiment of the present application.

[0030] In the figure:

[0031] 1- radiator, 2- clamping tube, 3- inner tube, 4- outer tube module, 5- AC side quick connector, 61- first low-inductance busbar, 611- DC connection part, 612- DC transfer busbar, 6121- high potential connection bar, 6122- neutral potential connection bar, 6123- low potential connection bar, 613- device overlapping part, 62- AC copper busbar, 7- third low-inductance busbar, 8- second low-inductance busbar, 811- high potential connection terminal, 812- neutral potential connection terminal, 813- low potential connection terminal, 82- DC transfer busbar, 83- device overlapping part, 10- DC side quick connector, 11- support assembly, 12- control box, 13- pulse drive integrated board. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings. The described embodiments should not be regarded as limiting the present application. All other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of this application.

[0033] In the following description, reference is made to “some embodiments”, which describe a subset of all possible embodiments, but it will be understood that “some embodiments” may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0034] If similar descriptions of "first\second\third" appear in the application documents, the following instructions will be added. In the following description, the terms "first\second\third" involved are merely used to distinguish similar objects and do not represent a specific ordering of the objects. It can be understood that "first\second\third" can be interchanged in a specific order or sequence where permitted, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein.

[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein are only for the purpose of describing the embodiments of this application and are not intended to limit this application.

[0036] Embodiment 1:

[0037] The three-level converter is a device used to control the current in the power system. It can convert DC power into AC power, thereby achieving effective control and management of the power system. The three-level converter has various requirements in practical applications, and it is necessary to develop a variety of three-level converters. It is impossible to achieve platformization and simplification of the device. At the same time, the cost of the three-level converter using all-SiC devices is high, and the number of parallel devices required is too large, which makes the cost performance of the three-level converter very low.

[0038] In view of the problems existing in the prior art, such as Figure 1 As shown, the present application provides a method for determining a layout diagram of a converter device, and the method is applied to an electronic device, and the electronic device can be a server, a mobile terminal, a computer, a cloud platform, etc. The function implemented by the device data processing provided in the embodiment of the present application can be implemented by calling a program code by a processor of the electronic device, wherein the program code can be stored in a computer storage medium, and the method for determining a layout diagram of a converter device includes:

[0039] Step S1: obtaining target requirements for the current conversion device.

[0040] Step S2: Determine the device type and arrangement of each device in the converter according to the target requirement.

[0041] The difference between three-level converters is mainly reflected in the layout of power devices and the circuit of power devices. Therefore, in order to meet the platformization and simplification of three-level converters, it is necessary to first determine the device layout of the target three-level converter according to the requirements. Before determining the device layout, it is necessary to first determine the type of devices required and the layout of the devices according to the target requirements.

[0042] In the prior art, the three-level converter uses all silicon carbide devices, but due to the large number of silicon carbide devices required and the high price of a single silicon carbide device, the resulting three-level converter has a low cost-performance ratio. Therefore, the present application proposes to use a mixture of silicon carbide devices and silicon devices to form a three-level converter. The devices of the three-level converter can be divided into an outer tube, a clamping tube and an inner tube according to their functions, wherein the arrangement of the inner tube can also be selected as a multiple-parallel inner tube mode and a single inner tube mode, and the target requirements of the three-level converter include: an inner tube high-frequency switch, an outer tube and a clamping tube low-frequency switch, and an inner tube low-frequency switch, an outer tube and a clamping tube high-frequency switch.

[0043] Therefore, in some embodiments, step S2 of "determining the device type and arrangement of each device in the converter according to the target requirement" includes:

[0044] Step S21: When the target requirement is that the inner tube needs high-frequency switching and the outer tube and the clamping tube need low-frequency operation, it is determined that the outer tube and the clamping tube are silicon devices, the inner tube is a silicon carbide device or a silicon device, and the arrangement method is that multiple inner tubes are connected in parallel.

[0045] In some embodiments, step S2 of "determining the device type and arrangement of each device in the converter according to the target requirement" further includes:

[0046] Step S22: When the target requirement is that the inner tube needs low-frequency switching and the outer tube module needs high-frequency operation, it is determined that the outer tube module is a silicon carbide device, the inner tube is a silicon device, and the arrangement is a single inner tube.

[0047] Step S3: determining a device layout diagram of the converter according to the arrangement mode and the device type.

[0048] After determining the device type and arrangement of each device, the device schematic diagram of the three-level converter can be easily determined, wherein the device schematic diagram obtained according to step S21 is as follows: Figure 2 As shown, the device schematic diagram obtained according to step S22 is as follows Figure 4 Then determine the device layout diagram based on the device schematic diagram.

[0049] So in some embodiments, such as Figure 3As shown, when the device type and the arrangement are as in step S21, the device layout diagram determined in step S3 according to step S2 includes:

[0050] The outer tubes and the clamping tubes are arranged in a matrix to form a two-by-two matrix, and the outer tubes and the clamping tubes are arranged in a row respectively. The inner tubes are arranged in a row longitudinally and close to the side of the matrix where the clamping tubes are located.

[0051] In a three-level converter, the outer tube can be divided into an upper outer tube and a lower outer tube, and similarly the clamping tube can be divided into an upper clamping tube and a lower clamping tube.

[0052] Therefore, in some embodiments, the device layout diagram further includes:

[0053] The upper outer tube and the upper clamping tube are located in the same row, and the AC side of the upper outer tube is adjacent to the DC side of the upper clamping tube. The lower outer tube and the lower clamping tube are located in the same row, and the DC side of the lower outer tube is adjacent to the AC side of the lower clamping tube. The drain or collector of the inner tube is close to the clamping tube. Figure 3 Among them, V1 represents the upper outer tube, V2 represents the upper clamping tube, V3 represents the lower clamping tube, V4 represents the lower outer tube, and V5-V7 represent the inner tubes.

[0054] This device layout can improve the space utilization of power devices in the inner tube multi-parallel mode, making the space of power devices compact and improving power density. It can also effectively reduce the stray inductance in the loop, thereby reducing the overvoltage spikes generated during the switching process of the device.

[0055] exist Figure 2 and Figure 3 The inner tube can be made of silicon carbide devices or silicon devices, so when the inner tube uses silicon carbide devices, the drain of the inner tube is close to the clamping tube, and when the inner tube uses silicon devices, the collector of the inner tube is close to the clamping tube.

[0056] In some embodiments, the device schematic diagram obtained according to step S22 is as follows: Figure 4 As shown, in Figure 4 In the embodiment, the upper outer tube and the upper clamping tube are integrated into an upper outer tube module, and the lower outer tube and the lower clamping tube are integrated into a lower outer tube module. Figure 4 The device layout diagram obtained is as follows Figure 5 As shown, including:

[0057] The upper outer tube module and the lower outer tube module are arranged in a row from top to bottom, and the AC side of the upper outer tube module and the AC side of the lower outer tube module are located on the same side. The inner tubes are arranged in rows, and each of the inner tubes has the same orientation, with the collector facing the AC side of the upper outer tube module or the lower outer tube module. Figure 5In the figure, V1c represents the upper outer tube module, V2c represents the lower outer tube module, and V3c and V4c represent the inner tubes.

[0058] This device layout can improve the space utilization of power devices in the inner tube single tube mode, making the space of power devices compact and improving power density. It can also effectively reduce the stray inductance in the loop, thereby reducing the overvoltage spikes generated during the switching process of the device.

[0059] The present application realizes a platform-based and simplified design of three-level converters with different requirements through steps S1 to S3, which can meet the application requirements of high-voltage and high-power three-level converters, while achieving optimal matching of devices, effectively reducing device costs, and improving device density and cost-effectiveness.

[0060] Embodiment 2:

[0061] The layout of each power device in a converter device will change the overall structure of the converter device, and such a change will improve the overall performance of the converter device. Therefore, in the second aspect, a converter device is proposed, wherein at least four converter devices, such as Figure 6-Figure 9 As shown, they are a single-sided multi-parallel structure inverter device, a double-sided multi-parallel structure inverter device, a single-sided single-tube structure inverter device and a double-sided single-tube structure inverter device.

[0062] like Figure 6-Figure 9 As shown, the present application proposes a current conversion device, including: a heat sink 1, a power device, a low-inductance busbar, an AC side quick connector 5, a DC side quick connector 10, a support assembly 11, a control box 12 and a pulse drive integrated board 13.

[0063] The power device is based on Figure 3 or Figure 5 The device layout diagram is arranged on one side of the radiator 1. The AC side quick connector 5 is installed on the radiator 1, electrically connected to the low-inductance busbar, and is used to output the AC power output by the power device to the load. The DC side quick connector 10 is arranged on the radiator, electrically connected to the low-inductance busbar, and is used to input DC power to the power device. One end of the support assembly 11 is installed on the radiator 1, and the other end is connected to the control box 12, which is used to install the control box 12 and the radiator 1 together. The drive integrated board is installed in the control box 12 and is electrically connected to the power device, which is used to control the opening and closing of the power device.

[0064] like Figure 6 As shown, in some embodiments, when the power device is configured as follows Figure 3When the device layout diagram shown is arranged on the heat sink 1 , the low-inductance busbar includes: a first low-inductance busbar 61 and an AC copper busbar 62 .

[0065] The AC copper busbar 62 is connected to the AC side quick connector 5 and is electrically connected to the output end of the inner tube 3, and is used to output the AC power generated by the inner tube 3 to the AC side quick connector 5. The first low-inductance busbar 61 is connected to the DC side quick connector 10, and is simultaneously connected to the input and output ends of the outer tube and the clamping tube 2, and is also connected to the input end of the inner tube 3.

[0066] In some embodiments, Fig.10 As shown, the first low-inductance busbar 61 includes: a DC connection portion 611 , a DC transfer busbar 612 and a device bridging portion 613 .

[0067] The DC connection part 611 is provided with at least 4 connection blocks, which are connected to the DC side quick connector 10. The DC connection part 611 includes at least 2 neutral potential connection blocks, a high potential connection block and a low potential connection block.

[0068] The device overlap portion 613 includes a plurality of connection ports and at least three connection layers, wherein the connection layers are respectively a neutral potential layer, a high potential layer and a low potential layer. The connection port arranged in the high potential layer is connected to the positive input terminal of the upper outer tube. The connection port arranged in the neutral potential layer is connected to the negative input terminal of the upper clamping tube and the positive input terminal of the lower clamping tube. The connection port arranged in the low potential layer is connected to the negative input terminal of the lower outer tube.

[0069] The DC transfer busbar 612 includes at least 4 connection bars, including at least two neutral potential connection bars 6122, one high potential connection bar 6121 and one low potential connection bar 6123. The 4 connection bars are arranged in two layers, and the high potential connection bar 6121 and the low potential connection bar 6123 are arranged diagonally. One end of the two neutral potential connection bars 6122 are respectively connected to the two neutral potential connection blocks of the DC connection part 611, and the other end is connected to the neutral potential layer of the device lap part 613. One end of the high potential connection bar 6121 is connected to the high potential connection block of the DC connection part 611, and the other end is connected to the high potential layer of the device lap part 613. One end of the low potential connection bar 6123 is connected to the low potential connection block of the DC connection part 611, and the other end is connected to the low potential layer of the device lap part 613.

[0070] like Fig.10In the first low-inductance busbar 61 shown, the four connection rows are divided into two rows, and the high-potential connection row 6121 and the low-potential connection row 6123 are arranged diagonally, so that the low-inductance busbar can ensure good electrical performance and insulation performance. At the same time, this arrangement can greatly reduce the stray inductance in the first low-inductance busbar 61.

[0071] In some embodiments, Figure 8 As shown, when the power device is based on Figure 5 When the device layout diagram shown is arranged on the heat sink 1 , the low-inductance busbar includes: a second low-inductance busbar 8 and a third low-inductance busbar 7 .

[0072] The second low-inductance busbar 8 is connected to the DC side quick connector 10, and is also connected to the input ends of the upper outer tube module 4 and the lower outer tube module 4. The third low-inductance busbar 7 is connected to the output ends of the upper outer tube module 4 and the lower outer tube module 4, and is also connected to the input end and the output end of the inner tube 3, and is also connected to the AC side quick connector 5.

[0073] In some embodiments, Fig.11 As shown, the second low-inductance busbar 8 includes: a DC connection portion, a DC transfer busbar 82 and a device bridging portion 83.

[0074] The DC connection part includes at least five connection terminals connected to the DC side quick connector 10, wherein the connection terminals include at least two neutral potential connection terminals 812, one high potential connection terminal 811 and one low potential connection terminal 813. The five connection terminals form a terminal row.

[0075] When the high potential connection terminal 811 is located in the middle, there are two low potential connection terminals 813, which are arranged at both ends of the terminal row. When the low potential connection terminal 813 is located in the middle, there are two high potential connection terminals 811, which are arranged at both ends of the terminal row.

[0076] The device overlap portion 83 includes at least a plurality of connection ports and at least three connection layers, wherein the three connection layers are respectively a high potential layer, a low potential layer and a neutral potential layer. The connection port arranged at the high potential layer is connected to the positive input terminal of the upper outer tube module 4. The connection port arranged at the neutral potential layer is connected to the negative input terminal of the upper outer module module and the positive input terminal of the lower outer tube module 4. The connection port arranged at the low potential layer is connected to the negative input terminal of the lower outer tube module 4.

[0077] The DC transfer busbar 82 includes at least five connection bars, one end of each of which is connected to a connection terminal of the DC connection portion, and the other end is connected to a connection layer corresponding to the connection terminal.

[0078] exist Fig.11 The second low-inductance busbar 8 has multiple connection terminals, and a neutral potential connection terminal 812 is separated between the high potential connection terminal 811 and the low potential connection terminal 813, so that the low-inductance busbar can ensure good electrical performance and insulation performance. At the same time, this setting can greatly reduce the stray inductance in the first low-inductance busbar 61.

[0079] like Figure 6 and Figure 8 The above-mentioned flow conversion devices are all single-sided flow conversion devices, but in actual needs, there are also double-sided flow conversion devices, so in some embodiments, such as Figure 7 and Fig. 9 As shown, the same structure is arranged on both sides of the heat sink 1, so that the inverter device becomes a double-sided inverter device.

[0080] like Figure 7 As shown, the other side of the radiator 1 is arranged as follows Figure 6 The structure other than the heat sink 1 can obtain a double-sided multi-parallel structure inverter device. Fig. 9 As shown, the other side of the radiator 1 is arranged as follows Figure 8 The structure other than the heat sink 1 can obtain a converter device with a double-sided mounting structure and a single-tube structure. The converter device with a double-sided mounting method can further increase the number of power modules, reduce space utilization, and increase power density.

[0081] Those of ordinary skill in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory or optical memory, etc. Volatile memory can include random access memory (RAM) or external cache memory. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM).

[0082] It should be understood that "one embodiment" or "an embodiment" mentioned throughout the specification means that specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present application. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in various embodiments of the present application, the size of the sequence number of the above-mentioned processes does not mean the order of execution, and the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application. The above-mentioned sequence numbers of the embodiments of the present application are only for description and do not represent the advantages and disadvantages of the embodiments.

[0083] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0084] In the several embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation, such as: multiple units or components can be combined, or can be integrated into another system, or some features can be ignored or not executed. In addition, the coupling, direct coupling, or communication connection between the components shown or discussed can be through some interfaces, and the indirect coupling or communication connection of the devices or units can be electrical, mechanical or other forms.

[0085] The units described above as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units; they may be located in one place or distributed on multiple network units; some or all of the units may be selected according to actual needs to achieve the purpose of the present embodiment.

[0086] In addition, all functional units in the embodiments of the present application may be integrated into one processing unit, or each unit may be a separate unit, or two or more units may be integrated into one unit; the above-mentioned integrated units may be implemented in the form of hardware or in the form of hardware plus software functional units.

[0087] A person of ordinary skill in the art can understand that: all or part of the steps of implementing the above-mentioned method embodiment can be completed by hardware related to program instructions, and the aforementioned program can be stored in a computer-readable storage medium. When the program is executed, it executes the steps of the above-mentioned method embodiment; and the aforementioned storage medium includes: mobile storage devices, read-only memories (ROM, Read Only Memory), disks or optical disks, etc. Various media that can store program codes.

[0088] Alternatively, if the above-mentioned integrated unit of the present application is implemented in the form of a software function module and sold or used as an independent product, it can also be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the embodiment of the present application can essentially or in other words, the part that contributes to the prior art can be embodied in the form of a software product, which is stored in a storage medium and includes a number of instructions for a controller to execute all or part of the methods described in each embodiment of the present application. The aforementioned storage medium includes: various media that can store program codes, such as mobile storage devices, ROMs, magnetic disks, or optical disks.

[0089] The above is only an implementation method of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A method for determining a device layout diagram of a converter device, It is characterized in that include: Obtaining target requirements for the current conversion device; Determining the device type and arrangement of each device in the converter according to the target requirements; A device layout diagram of the converter is determined according to the arrangement mode and the device type.

2. The method according to claim 1, It is characterized in that The devices include: an inner tube, a clamping tube and an outer tube; the arrangement includes: multiple inner tubes are connected in parallel; the device types include: silicon devices and silicon carbide devices; the target requirements include: the inner tube needs to switch at a high frequency, and the outer tube and the clamping tube need to operate at a low frequency; the device type and arrangement of each device in the converter device are determined according to the target requirements, including: When the target requirement is that the inner tube needs high-frequency switching and the outer tube and the clamping tube need low-frequency operation, it is determined that the outer tube and the clamping tube are silicon devices, the inner tube is a silicon carbide device or a silicon device, and the arrangement method is that multiple inner tubes are connected in parallel.

3. The method according to claim 2, It is characterized in that The device layout diagram determined according to the arrangement mode and the device type includes: The outer tubes and the clamping tubes are arranged in a matrix to form a two-by-two matrix, and the outer tubes and the clamping tubes are each in a column; The inner tubes are arranged in a row longitudinally and close to a side of the matrix where the clamping tubes are located.

4. The method according to claim 3, It is characterized in that The outer tube includes: an upper outer tube and a lower outer tube; the clamping tube includes: an upper clamping tube and a lower clamping tube, and the device layout diagram also includes: The upper outer tube and the upper clamping tube are located in the same row, and the AC side of the upper outer tube is adjacent to the DC side of the upper clamping tube; The lower outer tube and the lower clamping tube are located in the same row, and the DC side of the lower outer tube is adjacent to the AC side of the lower clamping tube; The drain or collector of the inner tube is close to the clamping tube.

5. The method according to claim 1, It is characterized in that The device includes: inner tube and outer tube modules; the arrangement includes: multiple inner tubes in parallel; the device types include: silicon devices and silicon carbide devices; the target requirements include: the inner tube needs to be switched at a low frequency, and the outer tube module needs to be operated at a high frequency; the device type and arrangement of each device in the converter device are determined according to the target requirements, including: When the target requirement is that the inner tube needs low-frequency switching and the outer tube module needs high-frequency operation, it is determined that the outer tube module is a silicon carbide device, the inner tube is a silicon device, and the arrangement is a single inner tube.

6. The method according to claim 5, It is characterized in that The outer tube module includes: an upper outer tube module and a lower outer tube module; the device layout diagram also includes: Arrange the upper outer tube module and the lower outer tube module in a row from top to bottom, and the AC side of the upper outer tube module and the AC side of the lower outer tube module are located on the same side; The inner tubes are arranged in rows, and each of the inner tubes has the same orientation, with the collector facing the AC side of the upper outer tube module or the lower outer tube module.

7. A current conversion device, It is characterized in that include: Radiator, power devices, low-inductance busbar, AC side quick connector, DC side quick connector, support components, control box and pulse drive integrated board; The power device is arranged on one side of the heat sink according to the device layout diagram generated by the method according to any one of claims 1 to 4 or claims 5 to 6; The AC side quick connector is installed on the radiator and is electrically connected to the low-inductance busbar, and is used to output the AC power output by the power device to the load; The DC side quick connector is arranged on the heat sink, electrically connected to the low-inductance busbar, and is used to input DC power to the power device; One end of the support assembly is mounted on the radiator, and the other end is connected to the control box, so as to mount the control box and the radiator together; The integrated drive board is installed in the control box and is electrically connected to the power device to control the on and off of the power device.

8. The device according to claim 7, It is characterized in that When the power device is arranged on the heat sink according to the device layout diagram determined by the method according to any one of claims 1 to 4, the low-inductance busbar comprises: a first low-inductance busbar and an AC copper busbar; The AC copper busbar is connected to the AC side quick connector and is electrically connected to the output end of the inner tube, and is used to output the AC power generated by the inner tube to the AC side quick connector; The first low-inductance busbar is connected to the DC side quick connector, and is simultaneously connected to the input end and output end of the outer tube and the clamping tube, and is also connected to the input end of the inner tube.

9. The device according to claim 8, It is characterized in that The first low-inductance busbar comprises: a DC connection portion, a DC transfer busbar and a device connection portion; The DC connection part is provided with at least 4 connection blocks connected to the DC side quick connector; The DC connection part includes at least two neutral potential connection blocks, a high potential connection block and a low potential connection block; The device overlap portion comprises a plurality of connection ports and at least three connection layers, wherein the connection layers are respectively a neutral potential layer, a high potential layer and a low potential layer; The connection port provided on the high potential layer is connected to the positive input terminal of the upper outer tube; The connection port arranged at the neutral potential layer is connected to the negative input terminal of the upper clamping tube and the positive input terminal of the lower clamping tube; The connection port provided in the low potential layer is connected to the negative electrode input terminal of the lower outer tube; The DC transfer busbar includes at least 4 connection bars, including at least two neutral potential connection bars, one high potential connection bar and one low potential connection bar; The four connection bars are arranged in two layers, and the high potential connection bar is arranged diagonally to the low potential connection bar; One end of the two neutral potential connection bars is respectively connected to the two neutral potential connection blocks of the DC connection part, and the other end is connected to the neutral potential layer of the device overlap part; One end of the high potential connection bar is connected to the high potential connection block of the DC connection part, and the other end is connected to the high potential layer of the device bridging part; One end of the low potential connection bar is connected to the low potential connection block of the DC connection part, and the other end is connected to the low potential layer of the device overlapping part.

10. The device according to claim 7, It is characterized in that When the power device is arranged on the heat sink according to the device layout diagram determined by the method according to any one of claims 5 to 6, the low-inductance busbar includes: a second low-inductance busbar and a third low-inductance busbar; The second low-inductance busbar is connected to the DC side quick connector and is also connected to the input ends of the upper outer tube module and the lower outer tube module; The third low-inductance busbar is connected to the output ends of the upper outer tube module and the lower outer tube module, and is also connected to the input end and the output end of the inner tube, and is also connected to the AC side quick connector.

11. The device according to claim 10, It is characterized in that The second low-inductance busbar comprises: a DC connection portion, a DC transfer busbar and a device connection portion; The DC connection part includes at least five connection terminals connected to the DC side quick connector, wherein the connection terminals include at least two neutral potential connection terminals, one high potential connection terminal and one low potential connection terminal; The five connecting terminals form a terminal row; When the high potential connection terminal is located in the middle position, there are two low potential connection terminals, which are arranged at two ends of the terminal row respectively; When the low potential connection terminal is located in the middle position, there are two high potential connection terminals, which are arranged at two ends of the terminal row respectively; The device overlap portion comprises at least a plurality of connection ports and at least three connection layers, wherein the three connection layers are respectively a high potential layer, a low potential layer and a neutral potential layer; The connection port provided on the high potential layer is connected to the positive input terminal of the upper outer tube module; A connection port provided at the neutral potential layer is connected to the negative input terminal of the upper outer tube module and the positive input terminal of the lower outer tube module; The connection port provided at the low potential layer is connected to the negative input terminal of the lower outer tube module; The DC transfer busbar includes at least five connection bars, one end of each of the connection bars is connected to a connection terminal of the DC connection part, and the other end is connected to a connection layer corresponding to the connection terminal.

12. The device according to any one of claims 8 to 11, It is characterized in that The same structure is arranged on both sides of the heat sink, so that the converter becomes a double-sided converter.