Harmonic output oscillator based on multimode substrate integrated waveguide duplexer

Abstract

The invention discloses a harmonic output oscillator based on a multimode substrate integrated waveguide duplexer. The harmonic output oscillator comprises the multimode substrate integrated waveguide duplexer, an amplification unit and a loop phase-shifting microstrip line. The multimode substrate integrated waveguide duplexer comprises a fundamental frequency substrate integrated waveguide square resonant cavity located on the upper portion, a dual-mode substrate integrated waveguide square resonant cavity located in the middle, a first double-frequency substrate integrated waveguide square resonant cavity located on the lower left portion and a second double-frequency substrate integrated waveguide square resonant cavity located on the lower right portion. The resonant cavities are coupled through the coupling windows. The fundamental frequency substrate integrated waveguide square resonant cavity is provided with a first passband output microstrip line of the duplexer, the dual-mode substrate integrated waveguide square resonant cavity is provided with an input microstrip line of the duplexer, and the second frequency doubling substrate integrated waveguide square resonant cavity is provided with a second passband output microstrip line of the duplexer. The harmonic output oscillator is simple in structure, the design difficulty of the harmonic output oscillator is reduced, and the output frequency, the phase noise performance and the integration level of the oscillator are improved.

Description

Technical Field

[0001] The invention belongs to the technical field of microwave millimeter wave substrate integrated waveguide active devices, and in particular relates to a harmonic output oscillator based on a multimode substrate integrated waveguide duplexer. Background Art

[0002] With the rapid development of wireless communication systems, oscillators, as one of the core components of communication systems, have received extensive attention and in-depth research. The operating frequency, phase noise, circuit size, and power consumption of high-performance oscillators directly affect the overall performance of wireless communication systems. In order to meet the increasing communication needs, harmonic oscillators have been proposed as a method to improve oscillator performance.

[0003] Harmonic oscillators effectively increase the operating frequency and reduce the need for frequency conversion stages in the system by generating and outputting high-order harmonic frequency signals. At present, there are many technical solutions for implementing harmonic oscillators, including harmonic selection based on traditional filters, push-push harmonic oscillator technology, harmonic enhancement technology based on nonlinear elements, and multiple frequency technology. Although these methods have improved the harmonic output performance to a certain extent, they generally have the problems of high circuit complexity, large size, and high loss.

[0004] In recent years, substrate integrated waveguide technology has become a popular choice in the design of passive components for RF and microwave circuits due to its low loss, high quality factor, compact structure, easy integration and low manufacturing cost. In the design of oscillators, substrate integrated waveguide technology has significant advantages, especially in the design of frequency-selective units. The excellent performance of the resonant cavity based on substrate integrated waveguide in frequency selection helps to improve the harmonic selectivity and output efficiency of the oscillator.

[0005] However, in the existing technology, it is still difficult to optimize the high-frequency harmonic output performance and phase noise while taking into account the circuit size and integration in the realization of harmonic oscillators. How to achieve efficient harmonic output through a better frequency selection design while further reducing the circuit size and improving the phase noise performance is an urgent problem to be solved in the current harmonic oscillator field. Summary of the invention

[0006] Purpose of the invention: The purpose of the present invention is to improve the output frequency and phase noise performance of an oscillator and to provide a harmonic output oscillator based on a multi-mode substrate integrated waveguide duplexer.

[0007] Technical solution: To achieve this purpose, the present invention adopts the following technical solution:

[0008] The present invention discloses a harmonic output oscillator based on a multimode substrate integrated waveguide duplexer, comprising: a multimode substrate integrated waveguide duplexer, an amplifying unit, a first loop phase-shift microstrip line and a second loop phase-shift microstrip line; wherein a first passband output microstrip line of the multimode substrate integrated waveguide duplexer is connected to one end of the first loop phase-shift microstrip line, the other end of the first loop phase-shift microstrip line is connected to an input end of the amplifying unit, the output end of the amplifying unit is connected to the second loop phase-shift microstrip line, the other end of the second loop phase-shift microstrip line is connected to an input microstrip line of the multimode substrate integrated waveguide duplexer, and the multimode substrate integrated waveguide duplexer outputs a signal through the second passband output microstrip line.

[0009] Furthermore, the multi-mode substrate integrated waveguide duplexer comprises a baseband substrate integrated waveguide square resonant cavity located at the top, a dual-mode substrate integrated waveguide square resonant cavity located in the middle, a first double-frequency substrate integrated waveguide square resonant cavity located at the lower left, and a second double-frequency substrate integrated waveguide square resonant cavity located at the lower right, wherein the four resonant cavities are all composed of a metallized through-hole array uniformly distributed along the circumferential direction, and all comprise a dielectric substrate, and a metal layer is provided on the upper and lower surfaces of the dielectric substrate; the first passband output microstrip line is connected to the baseband substrate integrated waveguide square resonant cavity located at the top, the input microstrip line is connected to the dual-mode substrate integrated waveguide square resonant cavity located in the middle, and the second passband output microstrip line is connected to the second double-frequency substrate integrated waveguide square resonant cavity located at the lower right.

[0010] Furthermore, the baseband substrate integrated waveguide square resonant cavity located above is provided with a first passband output microstrip line on the right side, a first coupling window on the bottom, and a first type of metal disturbance through hole on the left side.

[0011] Furthermore, the dual-mode substrate integrated waveguide square resonant cavity located in the middle has the same geometric dimensions as the baseband substrate integrated waveguide square resonant cavity located above, an input microstrip line is provided on the right side, a first coupling window is provided on the top, a second coupling window is provided on the bottom, and a second type of metal perturbation through hole is provided on the left side.

[0012] Furthermore, the first doubled frequency substrate integrated waveguide square resonant cavity located at the lower left is about one-fourth the size of the dual-mode substrate integrated waveguide square resonant cavity located in the middle, so that its fundamental mode frequency is about twice the fundamental mode frequency of the dual-mode substrate integrated waveguide square resonant cavity located in the middle, a second coupling window is provided above it, a third coupling window is provided on the right side, and third-type metal perturbation through holes are provided at the lower left corner and the upper right corner.

[0013] Furthermore, the second doubled frequency substrate integrated waveguide square resonant cavity located at the lower right is about one-fourth the size of the dual-mode substrate integrated waveguide square resonant cavity located in the middle, so that its fundamental mode frequency is about twice the fundamental mode frequency of the dual-mode substrate integrated waveguide square resonant cavity located in the middle, a third coupling window is provided on the left side, an output microstrip line is provided below, and fourth-type metal perturbation through holes are provided at the lower left corner and the upper right corner.

[0014] Further, the baseband substrate integrated waveguide square resonant cavity located at the top and the dual-mode substrate integrated waveguide square resonant cavity located in the middle are coupled by a first coupling window located in the middle of the adjacent metallized through-hole arrays of the two, transmitting the TE101 mode, and forming the transmission path of the first passband of the duplexer; the dual-mode substrate integrated waveguide square resonant cavity located in the middle and the first double-frequency substrate integrated waveguide square resonant cavity located at the lower left are coupled by a second coupling window located in the middle of the adjacent metallized through-hole arrays of the two, transmitting the TE202 mode and the TE101 mode; the first double-frequency substrate integrated waveguide square resonant cavity located at the lower left and the second double-frequency substrate integrated waveguide square resonant cavity located at the lower right are coupled by a third coupling window located in the middle of the adjacent metallized through-hole arrays of the two, transmitting the TE101 mode. The coupling path between the dual-mode substrate integrated waveguide square resonant cavity located in the middle, the first double-frequency substrate integrated waveguide square resonant cavity located at the lower left, and the second double-frequency substrate integrated waveguide square resonant cavity located at the lower right constitutes the transmission path of the second passband of the duplexer. The frequency doubling relationship of the resonant frequencies of the TE101 mode and the TE202 mode of the dual-mode substrate integrated waveguide square resonant cavity located in the middle is used to realize the frequency doubling relationship of the frequencies of the two output ends of the duplexer.

[0015] Furthermore, the first passband output microstrip line of the baseband substrate integrated waveguide square resonant cavity located above is located in the middle of the right side, for coupling out the TE101 mode; the input microstrip line of the dual-mode substrate integrated waveguide square resonant cavity located in the middle is located on the right side about one-quarter of the distance between the baseband substrate integrated waveguide square resonant cavity located above, for exciting the TE101 mode and the TE202 mode; the second passband output microstrip line of the second doubled frequency substrate integrated waveguide square resonant cavity located at the lower right is located in the middle of the lower side, for coupling out the TE101 mode.

[0016] Furthermore, the first type of metal perturbation through hole of the baseband substrate integrated waveguide square resonant cavity located above is located in the vertical middle of the horizontal left side, and is used for perturbing the TE101 mode.

[0017] Furthermore, the second type of metal perturbation through hole of the dual-mode substrate integrated waveguide square resonant cavity located in the middle is located in the vertical middle of the horizontal left side, and is used for perturbing the TE101 mode.

[0018] Furthermore, the third type of metal perturbation through hole of the first double frequency substrate integrated waveguide square resonant cavity located at the lower left includes a fifth type of metal perturbation through hole located at the upper right and a sixth type of metal perturbation through hole located at the lower left. The two are mirror-distributed on the diagonal of the first double frequency substrate integrated waveguide square resonant cavity at the lower left, and are used to perturb the TE101 mode.

[0019] Furthermore, the fourth type of metal perturbation through hole of the second doubled frequency substrate integrated waveguide square resonant cavity located at the lower right includes the seventh type of metal perturbation through hole located at the upper right and the eighth type of metal perturbation through hole located at the lower left, and the two are mirror-distributed on the diagonal line of the second doubled frequency substrate integrated waveguide square resonant cavity located at the lower right, and are used to perturb the TE101 mode.

[0020] Furthermore, the first loop phase-shift microstrip line, the second loop phase-shift microstrip line, the first passband output microstrip line, the second passband output microstrip line and the input microstrip line are all 50 ohms.

[0021] Beneficial effects: The present invention discloses a harmonic output oscillator based on a multi-mode substrate integrated waveguide duplexer. By innovatively applying the frequency doubling relationship between the TE101 mode and the TE202 mode in the substrate integrated waveguide resonant cavity to the duplexer design, a multi-mode substrate integrated waveguide duplexer is developed, in which the center frequencies of the first passband and the second passband respectively operate at the fundamental frequency and the doubled frequency, as the frequency selection unit and harmonic output structure of the oscillator. The special frequency band design of the duplexer not only realizes the direct filtering output of the second harmonic of the oscillator, but also significantly improves the load-pulling resistance of the oscillator. Compared with the traditional fundamental output oscillator, the output frequency of the present invention is higher; compared with the oscillator that realizes harmonic output through a frequency multiplier, the present invention has better phase noise performance and higher integration. The structural design of the present invention breaks through the separation mode of frequency doubling and filtering in the traditional harmonic oscillator, realizes the high performance, miniaturization and integration of the oscillator, and is suitable for application scenarios with high requirements for high-frequency output and low noise. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a structural diagram of an oscillator in a specific implementation manner of the present invention;

[0023] Figure 2 It is an output spectrum diagram of an oscillator in a specific implementation manner of the present invention;

[0024] Figure 3 Graph showing the phase noise of an oscillator in a specific embodiment of the present invention. DETAILED DESCRIPTION

[0025] The technical solution of the present invention is further introduced below in conjunction with specific implementation modes and drawings.

[0026] like Figure 1 As shown, the present invention provides a harmonic output oscillator based on a multi-mode substrate integrated waveguide duplexer, comprising: a multi-mode substrate integrated waveguide duplexer 1, an amplifying unit 18, a first loop phase-shift microstrip line 17 and a second loop phase-shift microstrip line 19; wherein the first passband output microstrip line 15 of the multi-mode substrate integrated waveguide duplexer 1 is connected to one end of the first loop phase-shift microstrip line 17, the other end of the first loop phase-shift microstrip line 17 is connected to the input end of the amplifying unit 18, the output end of the amplifying unit 18 is connected to the second loop phase-shift microstrip line 19, the other end of the second loop phase-shift microstrip line 19 is connected to the input microstrip line 12 of the multi-mode substrate integrated waveguide duplexer 1, and the multi-mode substrate integrated waveguide duplexer 1 outputs a signal through the second passband output microstrip line 6. The first loop phase-shift microstrip line 17 , the second loop phase-shift microstrip line 19 , the first passband output microstrip line 15 , the second passband output microstrip line 6 , and the input microstrip line 12 are all 50 ohms.

[0027] The multimode substrate integrated waveguide duplexer 1 includes a baseband substrate integrated waveguide square resonant cavity 2 located at the top, a dual-mode substrate integrated waveguide square resonant cavity 3 located in the middle, a first double-frequency substrate integrated waveguide square resonant cavity 4 located at the lower left, and a second double-frequency substrate integrated waveguide square resonant cavity 5 located at the lower right. The four resonant cavities are all composed of a metallized through-hole array 16 uniformly distributed along the circumferential direction, and all include a dielectric substrate, and the upper and lower surfaces of the dielectric substrate are provided with metal layers; the first passband output microstrip line 15 is connected to the baseband substrate integrated waveguide square resonant cavity 2 located at the top, the input microstrip line 12 is connected to the dual-mode substrate integrated waveguide square resonant cavity 3 located in the middle, and the second passband output microstrip line 6 is connected to the second double-frequency substrate integrated waveguide square resonant cavity 5 located at the lower right.

[0028] The baseband substrate integrated waveguide square resonant cavity 2 located at the top has a first passband output microstrip line 15 on the right, a first coupling window 13 on the bottom, and a first type of metal perturbation through hole 14 on the left. The dual-mode substrate integrated waveguide square resonant cavity 3 located in the middle has the same geometric dimensions as the baseband substrate integrated waveguide square resonant cavity 2 located at the top, an input microstrip line 12 on the right, a first coupling window 13 on the top, a second coupling window 10 on the bottom, and a second type of metal perturbation through hole 11 on the left. The first double frequency substrate integrated waveguide square resonant cavity 4 located at the lower left has a size of about one-fourth of the dual-mode substrate integrated waveguide square resonant cavity 3 located in the middle, so that its fundamental mode frequency is about twice the fundamental mode frequency of the dual-mode substrate integrated waveguide square resonant cavity 3 located in the middle, a second coupling window 10 is provided above it, a third coupling window 8 is provided on the right side, and third-type metal perturbation through holes 6 are provided at the lower left corner and the upper right corner; the second double frequency substrate integrated waveguide square resonant cavity 5 located at the lower right has a size of about one-fourth of the dual-mode substrate integrated waveguide square resonant cavity 3 located in the middle, so that its fundamental mode frequency is about twice the fundamental mode frequency of the dual-mode substrate integrated waveguide square resonant cavity 3 located in the middle, a third coupling window 8 is provided on its left side, an output microstrip line 6 is provided below it, and fourth-type metal perturbation through holes 9 are provided at the lower left corner and the upper right corner.

[0029] The baseband substrate integrated waveguide square resonant cavity 2 located at the top and the dual-mode substrate integrated waveguide square resonant cavity 3 located in the middle are coupled by a first coupling window 13 located in the middle of the adjacent metallized through-hole arrays; the dual-mode substrate integrated waveguide square resonant cavity 3 located in the middle and the first doubled frequency substrate integrated waveguide square resonant cavity 4 located at the lower left are coupled by a second coupling window 10 located in the middle of the adjacent metallized through-hole arrays; the first doubled frequency substrate integrated waveguide square resonant cavity 4 located at the lower left and the second doubled frequency substrate integrated waveguide square resonant cavity 5 located at the lower right are coupled by a third coupling window 8 located in the middle of the adjacent metallized through-hole arrays.

[0030] The first passband output microstrip line 15 of the baseband substrate integrated waveguide square resonant cavity 2 located at the top is located in the middle of the right side; the input microstrip line 12 of the dual-mode substrate integrated waveguide square resonant cavity 3 located in the middle is located on the right side about a quarter of the distance between the baseband substrate integrated waveguide square resonant cavity 2 located at the top; the second passband output microstrip line 6 of the second doubled frequency substrate integrated waveguide square resonant cavity 5 located at the lower right is located in the middle of the bottom.

[0031] The first type of metal perturbation through hole 14 of the baseband substrate integrated waveguide square resonant cavity 2 located at the top is located in the vertical middle of the horizontal left side; the second type of metal perturbation through hole 11 of the dual-mode substrate integrated waveguide square resonant cavity 3 located in the middle is located in the vertical middle of the horizontal left side; the third type of metal perturbation through hole 7 of the first double frequency substrate integrated waveguide square resonant cavity 4 located at the lower left includes the fifth type of metal perturbation through hole 71 located at the upper right and the sixth type of metal perturbation through hole 72 located at the lower left, and the two are located at the lower left The diagonal line of the first double frequency substrate integrated waveguide square resonant cavity 4 is distributed in a mirror image; the fourth type of metal perturbation through hole 9 of the second double frequency substrate integrated waveguide square resonant cavity 5 located at the lower right includes the seventh type of metal perturbation through hole 91 located at the upper right and the eighth type of metal perturbation through hole 92 located at the lower left, and the two are located at The diagonal line of the second double frequency substrate integrated waveguide square resonant cavity 5 is distributed in a mirror image.

[0032] In this embodiment, the relative dielectric constant of the dielectric substrate used in the oscillator circuit is 2.2, the dielectric thickness is 0.508 mm, and the overall plane size of the oscillator is 90 mm*95 mm.

[0033] In this specific implementation manner, the signal is input from the output end of the amplifying unit 18 through the second loop phase-shifted microstrip line 19 into the input microstrip line 12 of the multi-mode substrate integrated waveguide duplexer 1, and then the signal is divided into two paths, one path is fed back from the first passband output microstrip line 15 of the multi-mode substrate integrated waveguide duplexer 1 through the first loop phase-shifted microstrip line 17 to the input end of the amplifying unit 18 to form a loop, and the other path is directly output from the second passband output microstrip line 6 after filtering the second harmonic through the multi-mode substrate integrated waveguide duplexer 1.

[0034] Figure 2 and Figure 3 They are respectively the spectrum diagram and phase noise diagram of the oscillator in this specific implementation manner. The output frequency of the oscillator in this specific implementation manner is 10.14 GHz, and the phase noise at the offset center frequency of 1 MHz is -131.53 dBc / Hz, while achieving low phase noise and high integration of the harmonic oscillator.

[0035] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A harmonic output oscillator based on a multi-mode substrate integrated waveguide duplexer, characterized in that: include: A multi-mode substrate integrated waveguide duplexer (1), an amplifying unit (18), a first loop phase-shifted microstrip line (17), and a second loop phase-shifted microstrip line (19); The first passband output microstrip line (15) of the multimode substrate integrated waveguide duplexer (1) is connected to one end of the first loop phase-shift microstrip line (17), the other end of the first loop phase-shift microstrip line (17) is connected to the input end of the amplification unit (18), the output end of the amplification unit (18) is connected to the second loop phase-shift microstrip line (19), the other end of the second loop phase-shift microstrip line (19) is connected to the input microstrip line (12) of the multimode substrate integrated waveguide duplexer (1), and the multimode substrate integrated waveguide duplexer (1) outputs a signal through the second passband output microstrip line (6).

2. The harmonic output oscillator based on a multi-mode substrate integrated waveguide duplexer according to claim 1, characterized in that: The multimode substrate integrated waveguide duplexer (1) comprises a baseband substrate integrated waveguide square resonant cavity (2) located at the top, a dual-mode substrate integrated waveguide square resonant cavity (3) located in the middle, a first double-frequency substrate integrated waveguide square resonant cavity (4) located at the bottom left, and a second double-frequency substrate integrated waveguide square resonant cavity (5) located at the bottom right, the four resonant cavities are all composed of a metallized through-hole array (16) uniformly distributed along the circumference, and all comprise a dielectric substrate, the upper surface and the lower surface of the dielectric substrate being provided with a metal layer; the first passband output microstrip line (15) is connected to the baseband substrate integrated waveguide square resonant cavity (2) located at the top, the input microstrip line (12) is connected to the dual-mode substrate integrated waveguide square resonant cavity (3) located in the middle, and the second passband output microstrip line (6) is connected to the second double-frequency substrate integrated waveguide square resonant cavity (5) located at the bottom right.

3. The harmonic output oscillator based on a multi-mode substrate integrated waveguide duplexer according to claim 2, characterized in that: The baseband substrate integrated waveguide square resonant cavity (2) located at the top has a first passband output microstrip line (15) on the right side, a first coupling window (13) on the bottom, and a first type of metal disturbance through hole (14) on the left side.

4. The harmonic output oscillator based on a multi-mode substrate integrated waveguide duplexer according to claim 2, characterized in that: The dual-mode substrate integrated waveguide square resonant cavity (3) located in the middle has the same geometric dimensions as the baseband substrate integrated waveguide square resonant cavity (2) located above, an input microstrip line (12) is provided on the right side, a first coupling window (13) is provided on the top, a second coupling window (10) is provided on the bottom, and a second type of metal disturbance through hole (11) is provided on the left side.

5. The harmonic output oscillator based on a multi-mode substrate integrated waveguide duplexer according to claim 2, characterized in that: The first double frequency substrate integrated waveguide square resonant cavity (4) located at the lower left has a size one-fourth of the dual-mode substrate integrated waveguide square resonant cavity (3) located in the middle, so that its fundamental mode frequency is twice the fundamental mode frequency of the dual-mode substrate integrated waveguide square resonant cavity (3) located in the middle, a second coupling window (10) is provided above it, a third coupling window (8) is provided on the right side, and third type metal perturbation through holes (6) are provided at the lower left corner and the upper right corner.

6. The harmonic output oscillator based on a multi-mode substrate integrated waveguide duplexer according to claim 2, characterized in that: The second double frequency substrate integrated waveguide square resonant cavity (5) located at the lower right has a size one-fourth of the dual-mode substrate integrated waveguide square resonant cavity (3) located in the middle, so that its fundamental mode frequency is twice the fundamental mode frequency of the dual-mode substrate integrated waveguide square resonant cavity (3) located in the middle, a third coupling window (8) is provided on its left side, an output microstrip line (6) is provided below, and fourth-type metal perturbation through holes (9) are provided at its lower left corner and upper right corner.

7. The harmonic output oscillator based on a multi-mode substrate integrated waveguide duplexer according to claim 2, characterized in that: The baseband substrate integrated waveguide square resonant cavity (2) located at the top and the dual-mode substrate integrated waveguide square resonant cavity (3) located in the middle are coupled by a first coupling window (13) located in the middle of the adjacent metallized through-hole arrays of the two, transmit the TE101 mode, and form a transmission path of the first passband of the duplexer; The dual-mode substrate integrated waveguide square resonant cavity (3) located in the middle and the first double-frequency substrate integrated waveguide square resonant cavity (4) located in the lower left are coupled by a second coupling window (10) located in the middle of the adjacent metallized through-hole arrays between the two to transmit the TE202 mode and the TE101 mode; the first double-frequency substrate integrated waveguide square resonant cavity (4) located in the lower left and the second double-frequency substrate integrated waveguide square resonant cavity (5) located in the lower right are coupled by a third coupling window (8) located in the middle of the adjacent metallized through-hole arrays between the two. , transmitting the TE101 mode; the coupling path between the dual-mode substrate integrated waveguide square resonant cavity (3) located in the middle, the first double-frequency substrate integrated waveguide square resonant cavity (4) located in the lower left, and the second double-frequency substrate integrated waveguide square resonant cavity (5) located in the lower right constitutes the transmission path of the second passband of the duplexer; utilizing the frequency doubling relationship between the resonance frequencies of the TE101 mode and the TE202 mode of the dual-mode substrate integrated waveguide square resonant cavity (3) located in the middle, the frequency doubling relationship between the frequencies of the two output ends of the duplexer is realized.

8. The harmonic output oscillator based on a multi-mode substrate integrated waveguide duplexer according to claim 2, characterized in that: The first passband output microstrip line (15) of the baseband substrate integrated waveguide square resonant cavity (2) located at the top is located in the middle of the right side, and is used for coupling out the TE101 mode; the input microstrip line (12) of the dual-mode substrate integrated waveguide square resonant cavity (3) located in the middle is located on the right side at about one-fourth of the interval between the baseband substrate integrated waveguide square resonant cavity (2) located at the top, and is used for exciting the TE101 mode and the TE202 mode; the second passband output microstrip line (6) of the second doubled frequency substrate integrated waveguide square resonant cavity (5) located at the bottom right is located in the middle of the bottom, and is used for coupling out the TE101 mode.

9. The harmonic output oscillator based on a multi-mode substrate integrated waveguide duplexer according to claim 3, characterized in that: The first type of metal perturbation through hole (14) of the baseband substrate integrated waveguide square resonant cavity (2) located at the top is located at the middle of the horizontal left vertical position, and is used to perturb the TE101 mode; the second type of metal perturbation through hole (11) of the dual-mode substrate integrated waveguide square resonant cavity (3) located in the middle is located at the middle of the horizontal left vertical position, and is used to perturb the TE101 mode; the third type of metal perturbation through hole (7) of the first double frequency substrate integrated waveguide square resonant cavity (4) located at the bottom left includes a fifth type of metal perturbation through hole (71) located at the top right and a sixth type of metal perturbation through hole (72) located at the bottom left. The metal perturbation through holes (72) are located on the diagonal of the first double frequency substrate integrated waveguide square resonant cavity (4) at the lower left and are distributed in a mirror image, and are used to perturb the TE101 mode; the fourth type of metal perturbation through holes (9) of the second double frequency substrate integrated waveguide square resonant cavity (5) located at the lower right include a seventh type of metal perturbation through hole (91) located at the upper right and an eighth type of metal perturbation through hole (92) located at the lower left, and the two are located on the diagonal of the second double frequency substrate integrated waveguide square resonant cavity (5) at the lower right and are distributed in a mirror image, and are used to perturb the TE101 mode.

10. The harmonic output oscillator based on a multi-mode substrate integrated waveguide duplexer according to claim 1, characterized in that: The first loop phase-shift microstrip line (17), the second loop phase-shift microstrip line (19), the first passband output microstrip line (15), the second passband output microstrip line (6) and the input microstrip line (12) are all 50 ohms.

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