Radio frequency switch circuit, radio frequency module and electronic equipment

Abstract

The invention discloses a radio frequency switch circuit, a radio frequency module and electronic equipment, and relates to the field of radio frequency, and the radio frequency switch circuit comprises N first control switches and a grid bias circuit which are sequentially connected in series, the grid bias circuit comprises a first branch and a second branch, the second branch comprises N first sub-branches, one end of each first sub-branch is connected with the first branch, the other end of each first sub-branch is connected with the control end of the corresponding first control switch, and each first sub-branch at least comprises a first resistor and a second resistor which are connected in series; the first ends of the second control switches are connected to the first voltage end, the second ends of the second control switches are connected to the common end of the first resistor and the second resistor of the corresponding first sub-branch, and the second control switches are used for controlling the conduction state of a path between the first voltage end and the common end of the corresponding first resistor and the second resistor. The switching time of the radio frequency switching circuit between different states is shortened, the leakage loss of the radio frequency switching circuit is reduced, and the power capacity of the radio frequency switching circuit is increased.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a radio frequency switching circuit, a radio frequency module including the radio frequency switching circuit, and an electronic device including the radio frequency module. Background Art

[0002] At present, due to the rapid development of communication information, RF modules have higher and higher requirements for RF front-end modules. As an important component module of the RF module, the RF switch is used to switch the electrical connection between the antenna and the transmitting end or receiving end of the RF front-end module. It requires small insertion loss, good harmonics, and fast switching time. Therefore, how to optimize the performance of the RF switch to make it have small insertion loss, good harmonics, and fast switching time has become a research hotspot for technicians in this field. Summary of the invention

[0003] In view of the above problems, the present application provides a radio frequency switch circuit, a radio frequency module and an electronic device to optimize the performance of the radio frequency switch, so that the insertion loss is small, the harmonics are good, and the switching time is fast. The specific scheme is as follows:

[0004] In a first aspect, the present application provides a radio frequency switch circuit, comprising:

[0005] N first control switches and a gate bias circuit are sequentially connected in series, the gate bias circuit having a first end and N second ends, the first end is connected to the first bias voltage output end, and the second end corresponds to the first control switch one by one and is connected to the control end of the corresponding first control switch;

[0006] The gate bias circuit includes a first branch and a second branch, one end of the first branch is connected to the first bias voltage output end, and the other end is connected to the second branch; the second branch includes N first sub-branches, one end of the first sub-branch is connected to the first branch, and the other end is connected to the control end of the first control switch corresponding to it, and the first sub-branch includes at least a first resistor and a second resistor connected in series;

[0007] N second control switches, wherein the first end of the second control switch is connected to the first voltage end, and the second end is connected to the common end of the first resistor and the second resistor of the corresponding first sub-branch, and is used to control the conduction state of the path from the first voltage end to the common end of the first resistor and the second resistor.

[0008] In a possible implementation manner, the first end of each second control switch of the N second control switches is respectively connected to the first voltage end.

[0009] In another possible implementation, the N second control switches are connected in series in sequence. The first end of the Nth second control switch is electrically connected to the first voltage terminal, and the first end of the ith second control switch is connected to the second end of the (i + 1)th second control switch, where i is any integer from 1 to N - 1 in sequence.

[0010] In yet another possible implementation, the second control switch includes a first PMOS transistor and a first NMOS transistor. The source electrode of the first PMOS transistor is connected to the drain electrode of the first NMOS transistor, the drain electrode of the first PMOS transistor and the source electrode of the first NMOS transistor are connected, and the control terminals of the first PMOS transistor and the first NMOS transistor control the conduction and cutoff of the second control switch.

[0011] In still another possible implementation, it further includes:

[0012] A body bias circuit, the body bias circuit having a third terminal and N fourth terminals. The third terminal is connected to the second bias voltage terminal, and the fourth terminals correspond to the first control switches one by one and are connected to the body bottom ends of their corresponding first control switches.

[0013] In yet another possible implementation, the body bias circuit includes a third branch and a fourth branch. One end of the third branch is connected to the second bias voltage terminal, and the other end is connected to the fourth branch. The fourth branch includes N second sub - branches; the second sub - branches correspond to the first control switches one by one, one end is connected to the third branch, and the other end is connected to the body bottom end of its corresponding first control switch; the second sub - branch at least includes a third resistor and a fourth resistor connected in series;

[0014] The body bias circuit further includes:

[0015] N third control switches, the first end of the third control switch is connected to the second voltage terminal, and the second end is connected to the common end of the third resistor and the fourth resistor of its corresponding second sub - branch, for controlling the conduction state of the path between the second voltage terminal and the common end of the third resistor and the fourth resistor of its corresponding second sub - branch.

[0016] In still another possible implementation, the first ends of the third control switches among the N third control switches are respectively connected to the second voltage terminal.

[0017] In yet another possible implementation, the N third control switches are connected in series in sequence. The first end of the Nth third control switch is electrically connected to the second voltage terminal, and the first end of the jth third control switch is connected to the second end of the (j + 1)th third control switch, where j is any integer from 1 to N - 1 in sequence.

[0018] In a second aspect, the present application provides a radio frequency module, comprising the radio frequency switching circuit described in any one of the above items.

[0019] In a third aspect, the present application provides an electronic device, comprising the above-mentioned radio frequency module.

[0020] The RF switch circuit, RF module and electronic device provided in the embodiments of the present application can control the second control switch to be turned on for part of the time when the voltage input to the first bias voltage terminal charges the control end of the first control switch, and use the voltage input to the first voltage terminal to directly charge the control end of the first control switch through part of the resistor in the first sub-branch, thereby increasing the charging speed of the control end of the first control switch; and when the first bias voltage terminal is used to discharge the control end of the first control switch, control the second control switch to be turned on for part of the time, and use the first voltage terminal to directly discharge the control end of the first control switch through part of the resistor in the first sub-branch, thereby increasing the discharge speed of the control end of the first control switch and increasing the response speed of the first control switch, thereby shortening the time for the RF switch circuit to switch between different states.

[0021] In addition, in the RF switching circuit, RF module and electronic device provided in the embodiments of the present application, the second control switch is turned off before the first control switch is turned on, so that during the conduction period of the first control switch, the voltage input to the first bias voltage end is transmitted to the control end of the first control switch through the first resistor and the second resistor in the first branch and the second branch in sequence, thereby increasing the resistance between the control end and the voltage input end of the first control switch, reducing the leakage loss of the RF switching circuit, and increasing the power capacity of the RF switching circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The above and other features, advantages and aspects of the embodiments of the present disclosure will become more apparent with reference to the following detailed description in conjunction with the accompanying drawings. Throughout the accompanying drawings, the same or similar reference numerals represent the same or similar elements. It should be understood that the drawings are schematic and the originals and elements are not necessarily drawn to scale.

[0023] Figure 1 It is a structural schematic diagram of a current radio frequency switch circuit;

[0024] Figure 2 A schematic diagram of the structure of a radio frequency switch circuit provided in this application;

[0025] Figure 3 for Figure 2 A schematic diagram of a partial structure of a radio frequency switch circuit shown;

[0026] Figure 4 A schematic diagram of the structure of another radio frequency switch circuit provided in this application;

[0027] Figure 5 A schematic diagram of the structure of a second control switch in a radio frequency switch circuit provided in the present application;

[0028] Figure 6 A schematic diagram of the structure of another radio frequency switch circuit provided in the present application;

[0029] Figure 7 A schematic diagram of waveforms of some signals in a radio frequency switch circuit provided in the present application;

[0030] Figure 8 A schematic diagram of the structure of another radio frequency switch circuit provided in the present application;

[0031] Figure 9 A schematic diagram of the structure of another radio frequency switch circuit provided in the present application;

[0032] Figure 10 A schematic diagram of the structure of another radio frequency switch circuit provided in the present application;

[0033] Figure 11 A schematic diagram of the structure of another radio frequency switch circuit provided in the present application;

[0034] Figure 12 This is a schematic diagram of the structure of another radio frequency switch circuit provided in the present application. DETAILED DESCRIPTION

[0035] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the embodiments in the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0036] It is obvious to those skilled in the art that various modifications and changes can be made in the present application without departing from the spirit or scope of the present application. Therefore, the present application is intended to cover modifications and changes of the present application that fall within the scope of the corresponding claims (technical solutions for protection) and their equivalents. It should be noted that the implementation methods provided in the embodiments of the present application can be combined with each other without contradiction.

[0037] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the present application is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0038] As described in the background technology section, how to optimize the performance of RF switches to reduce insertion loss, improve harmonics, and increase switching time has become a research hotspot for those skilled in the art.

[0039] like Figure 1 As shown, the RF switch includes N MOS tubes (M1-MN) connected in series in sequence, and the control end of each MOS tube is connected to the same gate connection resistor Rgc through a gate resistor Rg (such as Rg1, Rg2...Rg(N-1), RgN), and the other end of the gate connection resistor Rgc is connected to the bias voltage output terminal Vg. Figure 1 In the RF switch shown, the gate resistor Rg and the gate connection resistor Rgc should take relatively appropriate values ​​so that the RF switch meets the requirements of low insertion loss and short switching time.

[0040] It should be noted that in Figure 1 In the RF switch shown, the larger the values ​​of the gate resistor Rg and the gate connection resistor Rgc, the lower the leakage loss of the RF switch and the larger the power capacity; however, the RC circuit composed of the large-resistance gate resistor Rg and the parasitic capacitance of the MOS tube will cause a large delay in the voltage change of the bias voltage output terminal Vg being transmitted to the gate of the MOS tube, resulting in a longer switching time of the RF switch.

[0041] In view of this, an embodiment of the present application provides a radio frequency switch circuit, such as Figure 2 As shown, the radio frequency switch circuit includes:

[0042] N first control switches M (i.e., M1, M2, ..., M(N-1), MN) and a gate bias circuit are sequentially connected in series, wherein the gate bias circuit has a first end and N second ends, wherein the first end is connected to the first bias voltage output end Vg, and the second end corresponds to the first control switch M one by one and is connected to the control end of the first control switch M corresponding thereto, and optionally, the first control switch M is a MOS tube;

[0043] The gate bias circuit includes a first branch and a second branch, the first branch includes a gate connection resistor Rgc, the second branch includes a gate resistor Rg, one end of the first branch is connected to the first bias voltage output terminal Vg, and the other end is connected to the second branch; the second branch includes N first sub-branches 10, one end of the first sub-branch 10 is connected to the first branch, and the other end is connected to the control end of the first control switch M corresponding to it, and the first sub-branch 10 includes at least a first resistor Rga and a second resistor Rgb connected in series;

[0044] N second control switches K (i.e., K1, K2...K(N-1), KN), wherein the first end of the second control switch K is connected to the first voltage terminal Vgc, and the second end is connected to the common end of the first resistor Rga and the second resistor Rgb corresponding thereto, and is used to control the conduction state of the path from the first voltage terminal Vgc to the common end of the first resistor Rga and the second resistor Rgb, and optionally, the first voltage terminal Vgc is a DC control voltage.

[0045] It should be noted that in other embodiments of the present application, the gate resistor Rg may include two resistors or more resistors, which is not limited in the present application and depends on the specific circumstances. The following describes the RF switch control circuit provided in the embodiment of the present application by taking the gate resistor including the first resistor and the second resistor as an example.

[0046] It should be noted that in Figure 2 In the figure, the first resistor in the first sub-branch corresponding to the first first control switch M1 is Rga1, and the second resistor is Rgb1; the first resistor in the first sub-branch corresponding to the second first control switch M2 is Rga2, and the second resistor is Rgb2; the first resistor in the first sub-branch corresponding to the third first control switch M3 is Rga3, and the second resistor is Rgb3; and so on, the first resistor in the first sub-branch corresponding to the N-1th first control switch M(N-1) is Rga(N-1), and the second resistor is Rgb(N-1); the first resistor in the first sub-branch corresponding to the Nth first control switch MN is RgaN, and the second resistor is RgbN. Similarly, the second control switch K corresponding to the first first control switch M1 is K1, the second control switch K corresponding to the second first control switch M2 is K2, the second control switch K corresponding to the third first control switch M3 is K3, and so on, the second control switch K corresponding to the N-1th first control switch M(N-1) is K(N-1), and the second control switch K corresponding to the Nth first control switch MN is KN.

[0047] It should also be noted that in the above embodiment, the first resistor Rga can be located between the second resistor Rgb and the first branch, or can be located on the side of the second resistor Rgb away from the first branch. The present application does not limit this. The following takes the example of the first resistor Rga being located between the second resistor Rgb and the first branch to describe the RF switching circuit provided in the embodiment of the present application.

[0048] Optionally, the voltage input to the first voltage terminal Vgc is the same as the voltage value input to the first bias voltage terminal Vg, so that the first voltage terminal Vgc and the first bias voltage terminal Vg can share the same input voltage, so that the first voltage terminal Vgc does not need to set an additional input signal, thereby not increasing the occupied area required for the RF switch circuit. It should be noted that, when the input voltage is the same, the smaller the resistance, the greater the current flowing through the branch where the resistance is located.

[0049] Therefore, in the RF switch circuit provided in the embodiment of the present application, the common end of the first resistor Rga and the second resistor Rgb is connected to the first voltage terminal Vgc through the second control switch K. If the voltage input to the first bias voltage terminal Vg is switched to a positive voltage, the second control switch K is turned on, and the first voltage terminal Vgc maintains a positive voltage for a period of time, so that the voltage input to the first voltage terminal Vgc directly charges the control end of the corresponding first control switch M through the second resistor Rgb, such as Figure 3 As shown, the charging efficiency of the control end of the first control switch M is improved, the charging time of the control end of the first control switch M is shortened, thereby shortening the switching time of the first control switch M, improving the response speed of the first control switch M, and further shortening the switching time of the RF switch circuit between different states; if the voltage input to the first bias voltage terminal Vg is a negative voltage, the second control switch K is turned on, then the first voltage terminal Vgc maintains a negative voltage for a period of time, so that the control end of the first control switch M is discharged through the path from the second resistor Rgb to the first voltage terminal Vgc, thereby improving the discharge efficiency of the control end of the first control switch M, shortening the discharge time of the control end of the first control switch M, thereby shortening the switching time of the first control switch M, improving the response speed of the first control switch M, and shortening the switching time of the RF switch circuit between different states.

[0050] It can be seen that the RF switching circuit provided in the embodiment of the present application can control the second control switch K to be turned on for part of the time when the voltage input by the first bias voltage terminal Vg charges the control end of the first control switch M, and use the voltage input by the first voltage terminal Vgc to directly charge the control end of the first control switch M through part of the resistance in the first sub-branch, thereby increasing the charging speed of the control end of the first control switch M; and when the control end of the first control switch M is discharged by the first bias voltage terminal Vg, control the second control switch K to be turned on for part of the time, and use the first voltage terminal Vgc to directly discharge the control end of the first control switch M through part of the resistance in the first sub-branch, thereby increasing the discharge speed of the control end of the first control switch M, and increasing the response speed of the first control switch M, thereby shortening the time for the RF switching circuit to switch between different states.

[0051] The following description of the RF switch circuit provided in the embodiment of the present application will continue by taking the case where the voltage input to the first bias voltage terminal is switched to a positive voltage and the second control switch is turned on as an example.

[0052] In addition, in the implementation of the present application, the second control switch K is turned off before the first control switch M is turned on, so that during the conduction period of the first control switch M, the voltage input by the first bias voltage terminal Vg is transmitted to the control end of the first control switch M through the first resistor Rga and the second resistor Rgb in the first branch and the second branch in sequence, thereby increasing the resistance between the control end and the voltage input end of the first control switch M, reducing the leakage loss of the RF switch circuit, and increasing the power capacity of the RF switch circuit.

[0053] Moreover, in the implementation of the present application, the second control switch K is turned off before the first control switch M is turned on, which can also prevent the RF signal input to the input end of the first control switch M from affecting the first voltage input end through the second control switch K when the power of the RF signal is large, and from leaking to the control ends of other first control switches M through the control end of the first control switch M and the second control switch K in turn, resulting in different voltages on the control ends of different first control switches M, thereby increasing the risk of some first control switches M being burned out.

[0054] Optionally, in one embodiment of the present application, the second control switch K is turned off for a first time before the first control switch M is turned on, that is, in this embodiment, in the process of charging the control end of the first control switch M, the second control switch K is first controlled to be turned on, and the control end of the first control switch M is charged using the voltage input by the first voltage terminal Vgc, and then the second control switch K is controlled to be turned off, and the control end of the first control switch M is charged using the voltage input by the first bias voltage terminal Vg, until the control end of the first control switch M is completely charged. In this process, the time for charging the control end of the first control switch M using the voltage input by the first bias voltage terminal Vg is the first time, so as to avoid the input RF signal of the first control switch M being leaked to the control end of other first control switches M through the control end of the first control switch M due to the completion of charging the control end of the first control switch M directly using the voltage input by the first voltage terminal Vgc, so that the voltage on the control end of different first control switches M is different, causing the first control switch M with a larger control end to be easily burned.

[0055] It should be noted that the present application does not limit the specific value of the first time, which depends on the specific situation. The greater the power of the RF signal input to the input end of the first control switch M, the greater the value of the first time.

[0056] Optionally, in one embodiment of the present application, if a positive voltage is input to the first bias voltage terminal Vg, the second control switch K is turned on, and when the second control switch K is turned off, a negative voltage is input to the first voltage terminal Vgc so that the second control switch K is turned off better, but the present application is not limited to this. In other embodiments of the present application, when the second control switch K is turned off, a voltage of 0V may also be input to the first voltage terminal Vgc, depending on the specific circumstances.

[0057] On the basis of any of the above embodiments, in an embodiment of the present application, the resistance value of the first resistor Rga may be the same as or different from the resistance value of the second resistor Rgb, wherein when the resistance value of the first resistor Rga is different from the resistance value of the second resistor Rgb, the resistance value of the first resistor Rga may be zero or greater than zero, and the present application does not limit this, depending on the specific circumstances.

[0058] Optionally, in one embodiment of the present application, the resistance of the first resistor Rga is not greater than the value of the second resistor Rgb, so as to avoid the value of the second resistor Rgb being too small, resulting in an increased leakage risk in the RF switch circuit.

[0059] Based on any of the above embodiments, in one embodiment of the present application, continue as follows Figure 2 As shown, the first end of each second control switch K in the N second control switches K is respectively connected to the first voltage end Vgc, so that the voltage input to the control end of each first control switch M is the same.

[0060] It should be noted that when the voltage input to the control end of each first control switch M is the same, the parasitic capacitance from each first control switch M to the ground is the same. At this time, the greater the power of the RF signal RF input to the first control switch M, the greater the leakage in the first control switch M, resulting in different leakages in different first control switches M along the RF signal transmission direction, and the leakage in the first control switch M close to the RF signal input end RFIN is larger.

[0061] Optionally, in one embodiment of the present application, along the transmission direction of the RF signal, the resistance of the second resistor Rgb between the control end of the first control switch M and the first voltage end Vgc gradually decreases to reduce the leakage from the first control switch M close to the RF signal input end RFIN to the first voltage end Vgc. Among the N first control switches M, along the transmission direction of the RF signal are the first first control switch M1, the second first control switch M2...the Nth first control switch MN, wherein the resistance Rb1 of the second resistor Rgb corresponding to M1 is greater than the resistance Rb2 of the second resistor Rgb corresponding to M2, greater than the resistance Rb3 of the second resistor Rgb corresponding to M3, greater than...greater than the resistance RbN of the second resistor Rgb corresponding to MN, that is, Rb1>Rb2>Rb3>...>RbN. However, the present application does not limit this, and it depends on the specific situation.

[0062] In another embodiment of the present application, Figure 4 As shown, the N second control switches K are sequentially connected in series, the first end of the Nth second control switch K is electrically connected to the first voltage terminal Vgc, the first end of the i-th second control switch K is connected to the second end of the i+1th second control switch K, and i is any integer from 1 to N-1. In the embodiment of the present application, the leakage path from the first first control switch M1 close to the RF signal input terminal RFIN to the first voltage terminal Vgc is smaller than the leakage path from the second first control switch M2 far from the RF signal input terminal RFIN to the first voltage terminal Vgc. At this time, even if the power of the input RF signal of the first first control switch M1 is large, due to the leakage The smaller the path, the less leakage will be. Therefore, in this embodiment, along the transmission direction of the RF signal, the resistance value of the second resistor Rgb between the control end of the first control switch M and the first voltage end Vgc can be the same, that is, along the transmission direction of the RF signal, the resistance value Rb1 of the second resistor Rgb corresponding to the first first control switch M1 is equal to the resistance value Rb2 of the second resistor Rgb corresponding to the second first control switch M2, equal to the resistance value Rb3 of the second resistor Rgb corresponding to the third first control switch M3, equal to ... equal to the value RbN of the second electron corresponding to the Nth first control switch M, that is, Rb1 = Rb2 = Rb3 is equal to ... = RbN. However, this application does not limit this, and it depends on the specific situation.

[0063] Based on any of the above embodiments, in one embodiment of the present application, Figure 5 and Figure 6As shown, the second control switch K includes a first PMOS tube and a first NMOS tube, the source of the first PMOS tube is connected to the drain of the first NMOS tube, and the drain of the first PMOS tube is connected to the source of the first NMOS tube; in this embodiment, the control signal input to the control terminal VP of the first PMOS tube and the control terminal VN of the first NMOS tube controls the conduction and shutdown of the second control switch K.

[0064] Specifically, in one embodiment of the present application, Figure 7 As shown, Figure 7 A waveform diagram of different signals in the RF switch circuit is shown, wherein RF represents the RF signal input to the input end of the first control switch M, Vmg1 represents the voltage of the control end of the first control switch M, and igc represents the charging current when the first voltage terminal Vgc charges the control end of the first control switch M through the second control switch K and the branch where the second resistor Rgb is located; in this embodiment, after the first bias voltage terminal Vg changes from negative voltage to positive voltage, the first control switch M is turned on, and the RF signal is transmitted from the input end of the first control switch M to the output end of the first control switch M. In this process, at the first moment V1, the first bias voltage terminal Vg changes from negative voltage to positive voltage, the first voltage terminal Vgc maintains positive voltage, the control terminal VP of the first PMOS tube in the second control switch K changes from negative voltage to positive voltage, and the control terminal VN of the first NMOS tube in the second control switch K changes from positive voltage to positive voltage. The voltage changes to negative voltage, the second control switch K is turned on, and the signal input from the first voltage terminal Vgc charges the control terminal of the first control switch M through the second resistor Rgb in the first sub-branch, so that the voltage of the control terminal of the first control switch M (see Vgm1) increases; after a period of time, at the second moment V2, the voltages of the first voltage terminal Vgc, the control terminal VP of the first PMOS tube in the second control switch K, and the control terminal VN of the first NMOS tube are reversed, the second control switch K is turned off, the first voltage terminal Vgc stops charging the control terminal of the first control switch M, and the voltage input from the first bias voltage terminal Vg charges the control terminal of the first control switch M through the first branch and the second branch in the gate bias circuit, until the voltage of the control terminal of the first control switch M reaches a certain value, the first control switch M is turned on, and the RF signal is transmitted from the input terminal of the first control switch M to the output terminal.

[0065] It should be noted that in the above embodiment, the duration between the first moment and the second moment, that is, the value of V2-V1 can be set larger to continue to speed up the conduction of the first control switch M, or it can be set smaller. The present application does not limit this, and it depends on the specific situation.

[0066] Based on any of the above embodiments, in one embodiment of the present application, Figure 8As shown, the RF switch circuit further includes: N unidirectional conducting diodes D, each of which corresponds to the first control switch M, and is connected between the control end and the substrate end of the corresponding first control switch M, so that when the control end of the first control switch M is at a conducting voltage through the unidirectional conducting diode D, the substrate end of the first control switch M is 0V. It should be noted that Figure 8 The unidirectional conducting diode corresponding to the first first control switch M1 is D1, the unidirectional conducting diode corresponding to the second first control switch M2 is D2, ..., the unidirectional conducting diode corresponding to the N-1th first control switch M(N-1) is D(N-1), and the unidirectional conducting diode corresponding to the Nth first control switch MN is DN.

[0067] In another embodiment of the present application, Figure 9 As shown, the RF switch circuit also includes: a volume bias circuit, the body bias circuit has a third terminal and N fourth terminals, the third terminal is connected to the second bias voltage terminal Vb, the fourth terminal corresponds to the first control switch M one by one, and is connected to the substrate terminal of the corresponding first control switch M, so that the first control switch M is controlled to be turned on and off by the body bias circuit and the gate bias circuit. Specifically, in one embodiment of the present application, the body bias circuit includes a third branch and a fourth branch, wherein the third branch includes a body connection resistor, and the fourth branch includes a body resistor. Specifically, one end of the third branch is connected to the second bias voltage terminal Vb, and the other end is connected to the fourth branch, and the fourth branch includes N second sub-branches; the second sub-branch corresponds to the first control switch M one by one, one end is connected to the third branch, and the other end is connected to the substrate terminal of the corresponding first control switch M; the second sub-branch includes at least a third resistor Rba and a fourth resistor Rbb connected in series.

[0068] Compared with the case where the RF switch circuit includes a body bias circuit, when the RF switch circuit includes a unidirectional conducting diode, the leakage of the RF switch circuit is less, but the voltage fluctuation at the substrate end of the first control switch is slightly larger; compared with the case where the RF switch circuit includes a unidirectional conducting diode, when the RF switch circuit includes a body bias circuit, the leakage may be slightly larger, but the voltage fluctuation at the substrate end of the first control switch is smaller.

[0069] It should be noted that, in this embodiment, the bulk resistance in the second sub-branch may include only two resistors, namely, the third resistor Rba and the fourth resistor Rbb, or may include more resistors, which is not limited in this application and depends on the specific circumstances. The following describes the RF switch circuit by taking the bulk resistance including two resistors, namely, the third resistor Rba and the fourth resistor Rbb, as an example.

[0070] On the basis of the above embodiments, in one embodiment of the present application, the body bias circuit further includes: N third control switches K', the first end of the third control switch K' is connected to the second voltage terminal Vbc, and the second end is connected to the common end of the corresponding third resistor Rba and the fourth resistor Rbb, for controlling the conduction state of the path from the second voltage terminal Vbc to the common end of the third resistor Rba and the fourth resistor Rbb. It should be noted that the third resistor Rba can be located between the fourth resistor Rbb and the third branch, or on the side of the fourth resistor Rbb away from the third branch. The following description of the RF switch circuit provided in the embodiment of the present application is continued with the assumption that the third resistor Rba is located on the side of the fourth resistor Rbb away from the third branch.

[0071] It should be noted that, in the present embodiment, the common end of the third resistor Rba and the fourth resistor Rbb is connected to the second voltage terminal Vbc via the third control switch K', thereby utilizing the path formed by the second voltage terminal Vbc, the third control switch K' and the third resistor Rba to further shorten the charging and discharging time of the substrate end of the first control switch M, so that the voltage changes of the control end and the substrate end of the first control switch M are synchronized, thereby further shortening the time for the first control switch M to switch between different states, further improving the response speed of the first control switch M, and at the same time, avoiding the voltage difference between the control end and the substrate end of the first control switch M to be too large, resulting in the burning of the first control switch M.

[0072] It should also be noted that in Figure 9 In the figure, the third resistor in the second sub-branch corresponding to the first first control switch M1 is Rba1, and the fourth resistor is Rbb1; the first resistor in the second sub-branch corresponding to the second first control switch M2 is Rba2, and the second resistor is Rbb2; the first resistor in the second sub-branch corresponding to the third first control switch M3 is Rba3, and the second resistor is Rbb3; and so on, the first resistor in the second sub-branch corresponding to the N-1th first control switch M(N-1) is Rba(N-1), and the second resistor is Rbb(N-1); the first resistor in the second sub-branch corresponding to the Nth first control switch MN is RbaN, and the second resistor is RbbN. Similarly, the third control switch K' corresponding to the first first control switch M1 is K1', the third control switch K' corresponding to the second first control switch M2 is K2', the third control switch K' corresponding to the third first control switch M3 is K3', and so on, the third control switch K' corresponding to the N-1th first control switch M(N-1) is K(N-1)', and the third control switch K' corresponding to the Nth first control switch MN is KN'.

[0073] Since the working principle of the third control switch K' is substantially the same as the working principle of the second control switch K, it will not be described in detail herein.

[0074] Optionally, in one embodiment of the present application, Figure 9 and Figure 10 As shown, the first end of each of the N third control switches K' is connected to the second voltage terminal Vbc. In an implementation of this embodiment, Figure 9 As shown, the first end of each second control switch K in the N second control switches K can be connected to the first voltage terminal Vgc respectively; in another implementation of this embodiment, as Figure 10 As shown, the N second control switches K are connected in series in sequence, the first end of the Nth second control switch K is electrically connected to the first voltage terminal Vgc, the first end of the i-th second control switch K is connected to the second end of the i+1th second control switch K, and i is any integer from 1 to N-1 in sequence.

[0075] In another embodiment of the present application, Figure 11 and Figure 12 As shown, the N third control switches K' are sequentially connected in series, the first end of the Nth third control switch K' is electrically connected to the second voltage terminal Vbc, the first end of the jth third control switch K' is connected to the second end of the j+1th third control switch K', and j is any integer from 1 to N-1. In an implementation of this embodiment, as Figure 11 As shown, the first end of each second control switch K in the N second control switches K can be connected to the first voltage terminal Vgc respectively. In another implementation of this embodiment, as shown in FIG. Figure 12 As shown, the N second control switches K are connected in series in sequence, the first end of the Nth second control switch K is electrically connected to the first voltage terminal Vgc, the first end of the i-th second control switch K is connected to the second end of the i+1th second control switch K, and i is any integer from 1 to N-1 in sequence.

[0076] Correspondingly, an embodiment of the present application further provides a radio frequency module, and the radio frequency module may include the radio frequency switch circuit provided in any of the above embodiments. Specifically, the radio frequency module may include a radio frequency front-end module and a radio frequency switch circuit, and the radio frequency switch circuit is used to switch the electrical connection between the antenna and the transmitting end or the receiving end of the radio frequency front-end module. Since the radio frequency switch circuit has been described in detail in the above embodiments, it will not be repeated here.

[0077] In addition, an embodiment of the present application further provides an electronic device, which includes the above-mentioned radio frequency module.

[0078] In summary, the RF switch circuit, RF module and electronic device provided in the embodiments of the present application can control the second control switch to be turned on for part of the time when the voltage input by the first bias voltage terminal charges the control end of the first control switch, and use the voltage input by the first voltage terminal to directly charge the control end of the first control switch through part of the resistance in the first sub-branch, thereby increasing the charging speed of the control end of the first control switch; and when the first bias voltage terminal is used to discharge the control end of the first control switch, control the second control switch to be turned on for part of the time, and use the first voltage terminal to directly discharge the control end of the first control switch through part of the resistance in the first sub-branch, thereby increasing the discharge speed of the control end of the first control switch, and increasing the response speed of the first control switch, thereby shortening the time for the RF switch circuit to switch between different states.

[0079] In addition, in the RF switching circuit, RF module and electronic device provided in the embodiments of the present application, the second control switch is turned off before the first control switch is turned on, so that during the conduction period of the first control switch, the voltage input to the first bias voltage end is transmitted to the control end of the first control switch through the first resistor and the second resistor in the first branch and the second branch in sequence, thereby increasing the resistance between the control end and the voltage input end of the first control switch, reducing the leakage loss of the RF switching circuit, and increasing the power capacity of the RF switching circuit.

[0080] Moreover, in the RF switch circuit, RF module and electronic device provided in the embodiments of the present application, the second control switch is turned off before the first control switch is turned on, which can also prevent the RF signal input to the input end of the first control switch from affecting the first voltage input end through the second control switch when the power of the RF signal is large, and from leaking to the control ends of other first control switches through the control end of the first control switch and the second control switch in turn, resulting in different voltages on the control ends of different first control switches, thereby increasing the risk of some first control switches being burned out.

[0081] In this specification, each embodiment is described in a progressive, parallel, or progressive and parallel manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.

[0082] It should be noted that in the description of the present application, it should be understood that the description of the drawings and embodiments is illustrative rather than restrictive. It should also be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish an entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the term "include", "comprise" or any other variant thereof is intended to cover non-exclusive inclusion, so that the article or equipment including a series of elements includes not only those elements, but also includes other elements that are not clearly listed, or also includes elements inherent to such articles or equipment. In the absence of more restrictions, the elements limited by the statement "including one..." do not exclude the existence of other identical elements in the article or equipment including the above-mentioned elements.

[0083] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A radio frequency switching circuit, characterized in that: include: N first control switches and a gate bias circuit are sequentially connected in series, the gate bias circuit having a first end and N second ends, the first end is connected to the first bias voltage output end, and the second end corresponds to the first control switch one by one and is connected to the control end of the corresponding first control switch; The gate bias circuit includes a first branch and a second branch, one end of the first branch is connected to the first bias voltage output end, and the other end is connected to the second branch; the second branch includes N first sub-branches, one end of the first sub-branch is connected to the first branch, and the other end is connected to the control end of the first control switch corresponding to it, and the first sub-branch includes at least a first resistor and a second resistor connected in series; N second control switches, wherein the first end of the second control switch is connected to the first voltage end, and the second end is connected to the common end of the first resistor and the second resistor of the corresponding first sub-branch, and is used to control the conduction state of the path from the first voltage end to the common end of the first resistor and the second resistor.

2. The radio frequency switch circuit according to claim 1, characterized in that: The first end of each second control switch of the N second control switches is connected to the first voltage end respectively.

3. The radio frequency switch circuit according to claim 1, characterized in that: The N second control switches are connected in series in sequence, the first end of the Nth second control switch is electrically connected to the first voltage end, the first end of the i-th second control switch is connected to the second end of the i+1th second control switch, and i is any integer from 1 to N-1 in sequence.

4. The radio frequency switch circuit according to any one of claims 1 to 3, characterized in that: The second control switch includes a first PMOS tube and a first NMOS tube, the source of the first PMOS tube is connected to the drain of the first NMOS tube, the drain of the first PMOS tube is connected to the source of the first NMOS tube, and the control end of the first PMOS tube and the control end of the first NMOS tube control the conduction and shutdown of the second control switch.

5. The radio frequency switch circuit according to any one of claims 1 to 3, characterized in that: Also includes: A body bias circuit, wherein the body bias circuit has a third terminal and N fourth terminals, wherein the third terminal is connected to the second bias voltage terminal, and the fourth terminals correspond one-to-one to the first control switches and are connected to the substrate terminals of the corresponding first control switches.

6. The radio frequency switch circuit according to claim 5, characterized in that: The body bias circuit includes a third branch and a fourth branch, one end of the third branch is connected to the second bias voltage terminal, and the other end is connected to the fourth branch, and the fourth branch includes N second sub-branches; the second sub-branches correspond to the first control switches one by one, one end is connected to the third branch, and the other end is connected to the substrate terminal of the corresponding first control switch; the second sub-branch includes at least a third resistor and a fourth resistor connected in series; The body bias circuit further includes: N third control switches, wherein the first end of the third control switch is connected to the second voltage end, and the second end is connected to the common end of the third resistor and the fourth resistor of the corresponding second sub-branch, and is used to control the conduction state of the path from the second voltage end to the common end of the corresponding third resistor and the fourth resistor.

7. The radio frequency switch circuit according to claim 6, characterized in that: The first end of each of the N third control switches is connected to the second voltage end respectively.

8. The radio frequency switch circuit according to claim 6, characterized in that: The N third control switches are connected in series in sequence, the first end of the Nth third control switch is electrically connected to the second voltage end, the first end of the jth third control switch is connected to the second end of the j+1th third control switch, and j is any integer from 1 to N-1 in sequence.

9. A radio frequency module, characterized in that: The invention comprises the radio frequency switch circuit as described in any one of claims 1 to 8.

10. An electronic device, characterized in that: Including the radio frequency module described in claim 9.

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