Perovskite solar cell and preparation method thereof

Abstract

According to the perovskite solar cell and the preparation method thereof, the hole transport layer, the perovskite layer, the electron transport layer and the metal electrode are sequentially prepared on the ITO substrate, PDADI is added in the hole transport layer and the mixed SAM solution, the uniform coverage rate of the SAM on the ITO substrate is increased, the interface energy level is optimized, hole extraction is promoted, and the hole transport layer and the perovskite layer are integrated. The non-radiative recombination of an interface is reduced, the surface wettability of the hole transport layer is improved, a film with higher quality and a film with low defect density are formed, and the efficiency and the stability of a perovskite solar cell device are improved. For a perovskite solar cell, PDADI is added into an SAM solution to be mixed to serve as a hole transport layer to prepare an inverted perovskite device, PDADI is added into the mixed SAM solution, the uniform coverage rate of SAM on an ITO substrate is increased, the interface energy level is optimized, hole extraction is promoted, and non-radiative recombination of an interface is reduced.

Description

Technical Field

[0001] The present application relates to the technical field of solar cell devices, and in particular to a perovskite solar cell and a preparation method thereof. Background Art

[0002] In recent years, the use of self-assembled monolayers (SAMs) as hole transport has become an effective strategy to enhance the device performance of perovskite solar cells (PSCs), increasing the power conversion efficiency (PCE) of inverted enhanced perovskite solar cells to more than 26%. Compared with traditional hole transport materials, self-assembled monolayers have the advantages of high transparency, low transfer resistance, high hole extraction rate and low interface recombination rate. It has been reported that they have been widely used in single-junction, all-perovskite tandem and perovskite-silicon tandem devices. In addition, the low material requirement of self-assembled monolayers has the potential to reduce the overall material cost and has good commercial prospects.

[0003] The uneven coverage of SAMs on transparent conducting oxides (TCOs) leads to interfacial energy losses and poor carrier extraction, limiting the reproducibility of efficient devices, especially for large-area devices. A lot of research has been done in the past to improve the coverage of SAMs.

[0004] Current methods for increasing the coverage of self-assembled monolayers are time-consuming and labor-intensive, requiring, for example, the design of synthetic molecules and vacuum deposition. There is also the risk that highly active nickel oxide sites may affect the stability of the device, resulting in insufficient device stability. Summary of the invention

[0005] The technical problem to be solved by this application is that the current methods for increasing the coverage of self-assembled monolayers are time-consuming and labor-intensive, such as requiring the design of synthetic molecules and vacuum deposition, etc. There is also a risk that highly active nickel oxide sites may affect the stability of the device, resulting in insufficient stability of the device.

[0006] In order to solve the above problems, in order to solve the above technical problems or at least partially solve the above technical problems, the present application provides a perovskite solar cell and a method for preparing the same.

[0007] In a first aspect, the present invention discloses a method for preparing a perovskite solar cell, which specifically comprises the following steps:

[0008] Obtaining an ITO substrate, and performing substrate pretreatment on the ITO substrate to obtain a pretreated substrate;

[0009] A mixed SAM solution is prepared, and the mixed SAM solution is applied to the surface of the pretreated substrate to form a hole transport layer on the pretreated substrate to obtain a substrate with a SAM layer; the mixed SAM solution is prepared by mixing PDADI with an ethanol solution of MeO-2PACz;

[0010] A perovskite precursor solution is prepared, and spin-coated on the hole transport layer of the substrate with the SAM layer to form a perovskite layer, thereby obtaining a substrate with the perovskite layer;

[0011] Get C 60 , BCP, are successively deposited on the perovskite layer of the substrate having the perovskite layer through a thermal evaporation process to form an electron transport layer, thereby obtaining a substrate having the electron transport layer;

[0012] Metallic silver is obtained and deposited onto the electron transport layer of a substrate having an electron transport layer by a process such as thermal evaporation to obtain a perovskite solar cell.

[0013] Preferably, the preparation of the mixed SAM solution, coating the mixed SAM solution on the surface of the pretreated substrate, forming a hole transport layer on the pretreated substrate, and obtaining a substrate with a SAM layer specifically comprises the following steps:

[0014] Obtain a 0.2-0.5 mg / mL MeO-2PACz ethanol solution, add a predetermined amount of PDADI, and stir for 30 minutes to mix evenly to obtain a mixed SAM solution;

[0015] The mixed SAM solution was dropped onto one surface of the pretreated substrate, and the coating treatment was performed at a rotation speed of 4000 rpm for 30 seconds, so that the surface of the ITO substrate was fully coated with the mixed SAM solution;

[0016] The pre-treated substrate coated with the mixed SAM solution is annealed at 100° C. to form a hole transport layer, thereby obtaining a substrate with a SAM layer.

[0017] Preferably, the method of preparing the perovskite precursor solution is dripped onto the surface of the substrate with the SAM layer coated with the SAM solution, and subjected to spin coating and annealing treatment to obtain the substrate with the perovskite layer, which specifically includes the following steps:

[0018] Adopt FA 0.85 MA 0.1 Cs 0.05 PbI 3 preparing a perovskite precursor solution;

[0019] Adding a predetermined amount of MACL to the perovskite precursor solution, stirring for a predetermined time to mix evenly, to obtain a perovskite precursor mixed solution;

[0020] The perovskite precursor mixed solution is dropped onto the hole transport layer of the substrate with the SAM layer, and a perovskite layer is formed through two different stages of spin coating treatment to obtain a substrate with a perovskite layer.

[0021] Preferably, the FA 0.85 MA 0.1 Cs 0.05 PbI 3 The preparation of the perovskite precursor solution specifically comprises the following steps:

[0022] In preparing a mixed solvent of DMF and DMSO, the ratio of DMF to DMSO is 4:1;

[0023] Get the predetermined amount of FA 0.85 MA 0.1 Cs 0.05 PbI 3 , dissolved in a mixed solvent of DMF and DMSO to obtain a perovskite precursor solution.

[0024] Preferably, the method of dripping the mixed solution of the perovskite precursor on the hole transport layer of the substrate with the SAM layer, and performing two different stages of spin coating to form a perovskite layer to obtain a substrate with a perovskite layer specifically comprises the following steps:

[0025] The perovskite precursor mixed solution was continuously dripped on the surface of the hole transport layer of the substrate with the SAM layer, and after 10 seconds of rotation at 1000 rpm and coating treatment, the substrate treated in the first stage was obtained;

[0026] The perovskite precursor mixed solution was continued to be dripped onto the substrate treated in the first stage, and after 40 seconds of rotation at 5000 rpm and coating treatment, a substrate treated in the second stage was obtained;

[0027] CB was dropped into the substrate treated in the second stage as an anti-solvent, and annealed at 100° C. for 30 min to obtain a substrate with a perovskite layer.

[0028] Preferably, the acquisition C 60 , BCP, and successively depositing them on the perovskite layer of the substrate having the perovskite layer through a thermal evaporation process to form an electron transport layer, thereby obtaining a substrate having the electron transport layer, specifically comprising the following steps:

[0029] Passivating the substrate having the perovskite layer to obtain a passivated perovskite layer substrate;

[0030] Get the predetermined amount of C 60 , thermally evaporated onto the substrate with the perovskite layer at a rate of 0.2 Å / s to form C 60 layer;

[0031] A predetermined amount of BCP is obtained and thermally evaporated onto the substrate having the perovskite layer at a rate of 0.15 Å / s to form a BCP layer. 60 The layer and the BCP layer form an electron transport layer, thereby obtaining a substrate having an electron transport layer.

[0032] Preferably, the passivation treatment of the substrate having the perovskite layer to obtain the passivated perovskite layer substrate specifically comprises the following steps:

[0033] Prepare PEAI solution, drop it on the substrate with perovskite layer, and spin-coat it at 4000 rpm for 30 seconds to form a passivation layer;

[0034] The amount of PEAI solution added is 0.5-1.5 mg / mL.

[0035] Preferably, the acquisition metal electrode is mounted on a substrate having an electron transport layer, and specifically comprises the following steps:

[0036] A predetermined amount of silver is obtained and thermally evaporated onto the substrate having the perovskite layer at a rate of 1 angstrom / second.

[0037] In a second aspect, the present invention discloses a perovskite solar cell, characterized in that it is prepared using the above-mentioned perovskite solar cell preparation method.

[0038] Preferably, it comprises a substrate layer, a self-assembled monolayer, a perovskite layer, an electron transport layer, and a metal electrode layer;

[0039] The metal electrode layer, the electron transport layer, the perovskite layer, the self-assembled monolayer, and the base layer are arranged in sequence.

[0040] The above technical solution provided by this application has the following advantages compared with the prior art:

[0041] The present application provides a perovskite solar cell and a preparation method thereof, wherein the preparation method mentions that on an ITO substrate, a hole transport layer, a perovskite layer, an electron transport layer, and a metal electrode are sequentially prepared, wherein in the hole transport layer, PDADI is added to the mixed SAM solution to improve the uniform coverage of the ITO substrate by SAM, optimize the interface energy level, promote hole extraction, reduce the non-radiative recombination of the interface, and improve the surface wettability of the hole transport layer, forming a higher quality film and a film with low defect density, thereby improving the efficiency and stability of the perovskite solar cell device. In addition, the mixed SAM solution is prepared by a spin coating process, and the operation steps are simple and easy compared to the previous vacuum evaporation deposition of SAM materials.

[0042] For perovskite solar cells, PDADI is added to the SAM solution and mixed as a hole transport layer to prepare an inverted perovskite device. PDADI is added to the mixed SAM solution to improve the uniform coverage of SAM on the ITO substrate, optimize the interface energy level, promote hole extraction, and reduce non-radiative recombination at the interface.

[0043] Furthermore, the internal structure of the perovskite solar cell is an ITO substrate, a hole transport layer, a perovskite layer, an electron transport layer, and a metal electrode. It adopts an inverted structure, placing the hole transport layer at the bottom, forming a stepped energy level match with the perovskite layer and the top electron transport layer, effectively reducing interface recombination and improving charge extraction efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0045] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0046] Figure 1 A schematic diagram of a process for preparing a perovskite solar cell provided in this application;

[0047] Figure 2 A schematic diagram of step S2 of a method for preparing a perovskite solar cell provided in this application;

[0048] Figure 3 A schematic flow chart of step S3 of a method for preparing a perovskite solar cell provided in the present application;

[0049] Figure 4 A schematic flow chart of step S4 of a method for preparing a perovskite solar cell provided in the present application;

[0050] Figure 5 A schematic diagram of the structure of a perovskite solar cell provided in this application.

[0051] Description of reference numerals:

[0052] 1. A perovskite solar cell;

[0053] 11. Base layer; 12. Self-assembled monolayer; 13. Perovskite layer; 14. Electron transport layer; 15. Metal electrode layer. DETAILED DESCRIPTION

[0054] In order to make the purpose, technical solutions and advantages of this application clearer, the technical solutions in this application will be clearly and completely described below in conjunction with the drawings in this application. Obviously, the described embodiments are part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0055] First, see Figure 1-4 The present invention discloses a method for preparing a perovskite solar cell, which specifically comprises the following steps:

[0056] Step S1: obtaining an ITO (indium tin oxide) substrate, and performing substrate pretreatment on the ITO substrate to obtain a pretreated substrate;

[0057] Step S2: preparing a mixed SAM (self-assembled monolayer) solution, coating the mixed SAM solution on the surface of the pretreated substrate, forming a hole transport layer on the pretreated substrate, and obtaining a substrate with a SAM layer; the mixed SAM solution is prepared by mixing PDADI (1,3-propylenediamine hydroiodide) with an ethanol solution of MeO-2PACz (methoxy-2-(9H-carbazole-9-yl)ethylphosphonic acid);

[0058] Step S3: preparing a perovskite precursor solution, and spin coating it on the hole transport layer of the substrate with the SAM layer to form a perovskite layer, thereby obtaining a substrate with a perovskite layer;

[0059] Step S4: Get C 60 (fullerene) and BCP (2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline) are successively deposited on the perovskite layer of the substrate having the perovskite layer by a thermal evaporation process to form an electron transport layer, thereby obtaining a substrate having an electron transport layer;

[0060] Step S5: obtaining metallic silver, and depositing it onto the electron transport layer of the substrate having the electron transport layer by a process such as thermal evaporation to obtain a perovskite solar cell.

[0061] Specifically, in step S1, the ITO substrate is treated with ultraviolet ozone for 15 minutes and then transferred to a nitrogen glove box for device manufacturing. The ultraviolet ozone treatment can clean the surface of the ITO substrate, remove organic pollutants on the surface of the ITO substrate and reduce surface defects, making the surface smoother and improving the surface activity and electrical properties of the ITO substrate. Treatment in a nitrogen glove box can improve manufacturing accuracy, effectively prevent the ITO substrate from being oxidized during the manufacturing process, and ensure the performance of the ITO substrate. Among them, ITO is used for mobile phone holes and is transmitted through external circuits. At the same time, as a supporting structure of the device, it improves the structural stability of the device. In addition, due to the inverted structure, the ITO substrate uses a highly transparent material so that light can be transmitted to the hole transport layer.

[0062] Specifically, in step S2, a mixed SAM solution is prepared by mixing PDADI and an ethanol solution of MeO-2PACz, so that the uniform coverage of the mixed SAM on the ITO substrate is improved and the non-radiative recombination of the interface is reduced. The mixed SAM solution is coated on the pretreated substrate to form a hole transport layer for extracting and transporting holes and blocking electrons.

[0063] Specifically, in step S3, the perovskite precursor solution is coated on the surface of the hole transport layer by spin coating to form a perovskite layer for absorbing visible light, responsible for absorbing photons and generating excitons, which are then separated into electrons and holes.

[0064] Specifically, in step S4, C 60 , BCP is sequentially deposited onto the surface of the perovskite layer through a thermal evaporation process to form an electron transport layer, which is used to extract and transport electrons while blocking holes to prevent them from reaching the metal electrode and causing recombination. At the same time, it may be necessary to passivate the surface defects of the perovskite.

[0065] Specifically, in step S5, metal silver is used to make a metal electrode, which is used as a cathode to collect electrons, thereby effectively collecting electrons.

[0066] It can be understood that the preparation method mentions that on the ITO substrate, a hole transport layer, a perovskite layer, an electron transport layer, and a metal electrode are prepared in sequence, wherein PDADI is added to the mixed SAM solution in the hole transport layer to improve the uniform coverage of the SAM on the ITO substrate, optimize the interface energy level, promote hole extraction, reduce the non-radiative recombination of the interface, and improve the surface wettability of the hole transport layer, forming a higher quality film and a film with low defect density, thereby improving the efficiency and stability of the perovskite solar cell device. In addition, the mixed SAM solution is prepared by a spin coating process, and the operation steps are simple and easy compared to the previous vacuum evaporation deposition of SAM materials.

[0067] Step S2 specifically includes the following steps:

[0068] Step S21: Obtain a 0.2-0.5 mg / mL MeO-2PACz ethanol solution, add a predetermined amount of PDADI, and stir for 30 minutes to mix evenly to obtain a mixed SAM solution;

[0069] Step S22: dripping the mixed SAM solution onto one surface of the pretreated substrate, rotating at a speed of 4000 rpm and performing a coating treatment for 30 seconds, so that the surface of the ITO substrate is fully coated with the mixed SAM solution;

[0070] Step S23: the pre-treated substrate coated with the mixed SAM solution is annealed at 100° C. to form a hole transport layer, thereby obtaining a substrate with a SAM layer.

[0071] Specifically, MeO-2PACz can combine with oxygen on the surface of ITO to form an ordered monolayer, improve interface contact, add 0.3-1 mg of PDADI, stir and mix to obtain a mixed SAM solution. During production, the mixed SAM solution is continuously dripped, and spin coating is performed while dripping the solution. The mixed SAM solution is dripped 30-100uL, and annealing is performed at 100°C for 5 minutes after coating. The high temperature allows the ethanol solvent to fully evaporate, reduce the residual solvent, and avoid the increase in ITO resistivity. It can be understood that PDADI is added when preparing the hole transport layer, so that the uniform coverage of the mixed SAM on the ITO substrate is improved, the non-radiative recombination of the interface is reduced, and the mixed SAM solution is coated on the pretreated substrate to form a hole transport layer for extracting and transmitting holes and blocking electrons at the same time.

[0072] Step S3 specifically includes the following steps:

[0073] Step S31: Using FA 0.85 MA 0.1 Cs 0.05 PbI 3 (Formamidine-methylammonium-cesium ternary mixed cation lead iodide perovskite) preparation of perovskite precursor solution;

[0074] Step S32: adding a predetermined amount of MACL to the perovskite precursor solution, stirring for a predetermined time to mix evenly, to obtain a perovskite precursor mixed solution;

[0075] Step S33: dripping the mixed solution of the perovskite precursor onto the hole transport layer of the substrate with the SAM layer, and forming a perovskite layer through two different stages of spin coating treatment to obtain a substrate with a perovskite layer.

[0076] Specifically, using FA 0.85 MA 0.1 Cs 0.05 PbI 3Prepare a perovskite precursor solution, add 14 mol% MACl (methylammonium chloride) to the solution, and the performance of the battery can be improved by adding MACl. 14 mol% MACl can significantly improve the photoelectric conversion efficiency of the battery and improve the stability of the battery. It can reduce the supersaturation of the precursor solution, avoid rapid random nucleation during spin coating, promote the formation of large grains, and achieve the purpose of regulating crystallization dynamics. Drop the perovskite precursor mixed solution on the hole transport layer to form a perovskite layer for absorbing visible light, responsible for absorbing photons and generating excitons, and then separating into electrons and holes.

[0077] Step S31 specifically includes the following steps:

[0078] Step S311: preparing a mixed solvent of DMF (N,N-dimethylformamide) and DMSO (dimethyl sulfoxide), wherein the ratio of DMF to DMSO is 4:1;

[0079] Step S312: Obtain a predetermined amount of FA 0.85 MA 0.1 Cs 0.05 PbI 3 , dissolved in a mixed solvent of DMF and DMSO to obtain a perovskite precursor solution.

[0080] Specifically, DMF and DMSO solvents, DMF solvent can efficiently dissolve PbI 2 Precursor salts such as PbI (lead iodide), FAI (formamidine iodide), MAI (methylammonium iodide), and CsI (cesium iodide) can reduce viscosity and are suitable for spin coating processes. DMSO can prolong the solvent evaporation time and promote the growth of large grains. During annealing, DMSO desorbs and releases PbI 2 Participate in the formation of perovskite phase. In addition, a 4:1 ratio is used, with DMF as the main component to ensure that the precursor salt is fully dissolved, the dissolution efficiency is maximized, and the uniformity of the spin coating film is ensured.

[0081] Step S33 specifically includes the following steps:

[0082] Step S331: the perovskite precursor mixed solution is continuously dripped on the surface of the hole transport layer of the substrate with the SAM layer, and after 10 seconds of rotation at 1000 rpm and coating treatment, a substrate treated in the first stage is obtained;

[0083] Step S332: Continue to drip the perovskite precursor mixed solution onto the substrate treated in the first stage, rotate at 5000 rpm for 40 seconds and perform coating treatment to obtain a substrate treated in the second stage;

[0084] Step S333: CB (chlorobenzene) is dropped into the substrate treated in the second stage as an anti-solvent, and annealing treatment is performed at 100° C. for 30 minutes to obtain a substrate having a perovskite layer.

[0085] Specifically, the lower rotation speed in the first stage may allow the solution to be evenly distributed on the substrate, avoiding the problem of too thick edges or too thin centers caused by high-speed rotation. The high rotation speed in the second stage accelerates the volatilization of the solvent, promotes rapid crystallization, and forms a dense perovskite layer. The solution is evenly spread by the initial low speed to control the crystallization dynamics. The high speed stage promotes solute supersaturation to form more uniform grains and avoid film defects such as cracks or pinholes caused by sudden high speed. CB is dripped as an antisolvent to adjust the solvent residue on the substrate before annealing during the preparation of perovskite films to optimize the perovskite crystallization quality.

[0086] Step S4 specifically includes the following steps:

[0087] Step S41: performing a passivation treatment on the substrate having the perovskite layer to obtain a passivated perovskite layer substrate;

[0088] Step S42: Obtain a predetermined amount of C 60 , thermally evaporated onto the substrate with the perovskite layer at a rate of 0.2 Å / s to form C 60 layer;

[0089] Step S43: Obtain a predetermined amount of BCP and thermally evaporate it onto the substrate having the perovskite layer at a rate of 0.15 Å / s to form a BCP layer. 60 The layer and the BCP layer form an electron transport layer, thereby obtaining a substrate having an electron transport layer.

[0090] Specifically, the passivation agent is spin-coated on the surface of the perovskite to form a passivation layer. The passivation layer is a monomolecular layer, which is easy to operate. The passivation treatment can improve the efficiency of defect passivation and the photoelectric conversion efficiency of the battery. 60 Thermal evaporation process is used to deposit on the surface of the perovskite layer to form C 60 layer, thickness is 25nm, C 60 The layer can be used for electron extraction and carrier transport. The continuous and dense C60 layer covers the pinholes on the perovskite surface and inhibits the diffusion of metal electrodes. Then BCP is deposited on the C60 layer by thermal evaporation. 60 On the layer, a BCP layer is formed with a thickness of 6nm. The BCP layer can inhibit chemical reactions such as oxidation between C60 and Ag, improve device stability, block hole backflow, and reduce dark current density. The C60 / BCP double electron transport layer can improve the photoelectric conversion capability. Among them, the thermal evaporation process can adopt the method of resistance heating.

[0091] Step S41 specifically includes the following steps:

[0092] Step S411: preparing a PEAI (phenylethylamine hydroiodide) solution, dropping it on the substrate having the perovskite layer, and spin coating it at a rotation speed of 4000 rpm for 30 seconds to form a passivation layer;

[0093] Step S412: The amount of the PEAI solution added is 0.5-1.5 mg / mL.

[0094] It can be understood that the use of PEAI solution as a passivation agent can improve the efficiency of passivation, enhance the performance of radio and television, inhibit ion migration, and enhance the stability of the battery. In addition, the use of spin coating technology makes the operation easier and reduces the complexity of the process operation.

[0095] Step S5 specifically includes the following steps:

[0096] Step S51: Obtain a predetermined amount of silver and thermally evaporate it onto a substrate having a perovskite layer at a rate of 1 angstrom / second.

[0097] It can be understood that silver is used as a metal electrode and as a cathode to collect electrons. After deposition, the thickness of the metal silver is 100 nm.

[0098] Second, see Figure 5 The present invention discloses a perovskite solar cell 1, which is prepared by the above-mentioned perovskite solar cell preparation method. The perovskite solar cell includes a substrate layer 11, a self-assembled monolayer 12, a perovskite layer 13, an electron transport layer 14, and a metal electrode layer 15; the metal electrode layer 15, the electron transport layer 14, the perovskite layer 13, the self-assembled monolayer 12, and the substrate layer 11 are arranged in sequence.

[0099] It can be understood that the internal structure of the perovskite solar cell 1 is an ITO substrate, a hole transport layer, a perovskite layer 13, an electron transport layer 14, and a metal electrode. An inverted structure is adopted, and the hole transport layer is placed at the bottom to form a stepped energy level match with the perovskite layer 13 and the top electron transport layer 14, which effectively reduces interface recombination and improves charge extraction efficiency.

[0100] Furthermore, for the perovskite solar cell 1, PDADI was added to the SAM solution and mixed as a hole transport layer to prepare an inverted perovskite device. PDADI was added to the mixed SAM solution to improve the uniform coverage of SAM on the ITO substrate, optimize the interface energy level, promote hole extraction, and reduce non-radiative recombination at the interface.

[0101] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0102] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0103] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0104] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be connected, detachably connected, or integrated; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0105] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0106] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms should not be understood as necessarily referring to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification.

[0107] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

[0108] The above is a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A method for preparing a perovskite solar cell, characterized in that: The specific steps include: Obtaining an ITO substrate, and performing substrate pretreatment on the ITO substrate to obtain a pretreated substrate; preparing a mixed SAM solution, coating the mixed SAM solution on the surface of the pretreated substrate, forming a hole transport layer on the pretreated substrate, and obtaining a substrate with a SAM layer; The mixed SAM solution is prepared by mixing PDADI with an ethanol solution of MeO-2PACz; A perovskite precursor solution is prepared, and spin-coated on the hole transport layer of the substrate with the SAM layer to form a perovskite layer, thereby obtaining a substrate with the perovskite layer; Get C 60 , BCP, are successively deposited on the perovskite layer of the substrate having the perovskite layer through a thermal evaporation process to form an electron transport layer, thereby obtaining a substrate having the electron transport layer; Metallic silver is obtained and deposited onto the electron transport layer of a substrate having an electron transport layer by a process such as thermal evaporation to obtain a perovskite solar cell.

2. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The method of preparing the mixed SAM solution, coating the mixed SAM solution on the surface of the pretreated substrate, forming a hole transport layer on the pretreated substrate, and obtaining a substrate with a SAM layer specifically comprises the following steps: Obtain a 0.2-0.5 mg / mL MeO-2PACz ethanol solution, add a predetermined amount of PDADI, and stir for 30 minutes to mix evenly to obtain a mixed SAM solution; The mixed SAM solution was dropped onto one surface of the pretreated substrate, and the coating treatment was performed at a rotation speed of 4000 rpm for 30 seconds, so that the surface of the ITO substrate was fully coated with the mixed SAM solution; The pre-treated substrate coated with the mixed SAM solution is annealed at 100° C. to form a hole transport layer, thereby obtaining a substrate with a SAM layer.

3. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The preparation of the perovskite precursor solution is dripped onto the surface of the substrate with the SAM layer coated with the SAM solution, and the substrate with the perovskite layer is obtained by spin coating and annealing. Specifically, the following steps are included: Adopt FA 0.85 MA 0.1 Cs 0.05 PbI3 is used to prepare perovskite precursor solution; Adding a predetermined amount of MACL to the perovskite precursor solution, stirring for a predetermined time to mix evenly, to obtain a perovskite precursor mixed solution; The perovskite precursor mixed solution is dropped onto the hole transport layer of the substrate with the SAM layer, and a perovskite layer is formed through two different stages of spin coating treatment to obtain a substrate with a perovskite layer.

4. The method for preparing a perovskite solar cell according to claim 3, characterized in that: The FA 0.85 MA 0.1 Cs 0.05 The preparation of perovskite precursor solution from PbI3 specifically includes the following steps: In preparing a mixed solvent of DMF and DMSO, the ratio of DMF to DMSO is 4:1; Get the predetermined amount of FA 0.85 MA 0.1 Cs 0.05 PbI3 is dissolved in a mixed solvent of DMF and DMSO to obtain a perovskite precursor solution.

5. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The method comprises dripping a mixed solution of a perovskite precursor onto a hole transport layer of a substrate with a SAM layer, and performing two different stages of spin coating to form a perovskite layer, thereby obtaining a substrate with a perovskite layer. Specifically, the method comprises the following steps: The perovskite precursor mixed solution was continuously dripped on the surface of the hole transport layer of the substrate with the SAM layer, and after 10 seconds of rotation at 1000 rpm and coating treatment, the substrate treated in the first stage was obtained; The perovskite precursor mixed solution was continued to be dripped onto the substrate treated in the first stage, and after 40 seconds of rotation at 5000 rpm and coating treatment, a substrate treated in the second stage was obtained; CB was dropped into the substrate treated in the second stage as an anti-solvent, and annealed at 100° C. for 30 min to obtain a substrate with a perovskite layer.

6. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The acquisition C 60 , BCP, and successively depositing them on the perovskite layer of the substrate having the perovskite layer through a thermal evaporation process to form an electron transport layer, thereby obtaining a substrate having the electron transport layer, specifically comprising the following steps: Passivating the substrate having the perovskite layer to obtain a passivated perovskite layer substrate; Get the predetermined amount of C 60 , thermally evaporated onto the substrate with the perovskite layer at a rate of 0.2 Å / s to form C 60 layer; A predetermined amount of BCP is obtained and thermally evaporated onto the substrate having the perovskite layer at a rate of 0.15 Å / s to form a BCP layer. 60 The layer and the BCP layer form an electron transport layer, thereby obtaining a substrate having an electron transport layer.

7. The method for preparing a perovskite solar cell according to claim 6, characterized in that: The passivation treatment of the substrate having the perovskite layer to obtain the passivated perovskite layer substrate specifically comprises the following steps: Prepare PEAI solution, drop it on the substrate with perovskite layer, and spin-coat it at 4000 rpm for 30 seconds to form a passivation layer; The amount of PEAI solution added is 0.5-1.5 mg / mL.

8. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The obtaining of the metal electrode, which is mounted on a substrate having an electron transport layer, specifically comprises the following steps: A predetermined amount of silver is obtained and thermally evaporated onto the substrate having the perovskite layer at a rate of 1 angstrom / second.

9. A perovskite solar cell, characterized in that: The perovskite solar cell is prepared by the method for preparing the perovskite solar cell according to any one of claims 1 to 8.

10. The perovskite solar cell according to claim 9, characterized in that: It includes a substrate layer, a self-assembled monolayer, a perovskite layer, an electron transport layer, and a metal electrode layer; The metal electrode layer, the electron transport layer, the perovskite layer, the self-assembled monolayer, and the base layer are arranged in sequence.

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