Preparation method of micro-nano laminated structure with controllable layer sequence distribution

Abstract

The invention discloses a preparation method of a micro-nano laminated structure with controllable layer sequence distribution, which relates to the technical field of micro-nano lamination, and comprises the following steps: enabling an initial laminated layer to pass through at least one non-uniform laminating device which is sequentially connected in series to form the micro-nano laminated structure; the initial stacking layer comprises at least one unit layer, the unit layer comprises at least one first layer body and at least one second layer body which are made of different materials, and the first layer bodies and the second layer bodies in the unit layer are sequentially staggered and stacked up and down; the non-uniform laminating device is provided with a first shunting channel and a second shunting channel; an initial stacking layer is shunted at a first shunting inlet and a second shunting inlet and then flows out from a corresponding first shunting outlet and a corresponding second shunting outlet respectively; and the flowing-out first shunting micro-layer and the flowing-out second shunting micro-layer are converged together again through an upper and lower laminated structure. The preparation of the high-layer-number micro-nano laminated structure with controllable layer number and layer thickness can be realized, the equipment is smaller, and the flow stability is ensured.

Description

Technical Field

[0001] The present invention relates to the field of micro-nano stacking technology, and in particular to a method for preparing a micro-nano stacking structure with controllable layer sequence distribution. Background Art

[0002] As a special gradient multilayer structure, the gradient micro-nano stacked structure not only has thousands or even tens of thousands of layers, but also can achieve a gradient change in the material composition or physical properties such as refractive index, conductivity, thermal conductivity, etc. along the thickness direction by realizing a gradient change in the thickness of its single layer at the micro-nano scale. It has outstanding advantages in improving material performance and enhancing functions. It has been used in materials science, optics, structural engineering, nanotechnology and other fields.

[0003] The existing gradient micro-nano stacked structure is mainly realized by a high-layer gradient distributor, which is equipped with hundreds or thousands of slit channels, and the volume of the slit channels changes gradually. The materials from different feeding devices are collected into a gradient micro-nano stacked structure through the slit units with gradually changing volumes. Since the number of prepared stacked structures is the same as the number of slit channels, when the number of layers exceeds 200, the size of the device will be large, resulting in an increase in the internal polymer melt extrusion residence time, causing thermal degradation of the polymer and the generation of impurities. In extreme cases, regular turbulence will be generated and the micro-nano stacked structure and its layer thickness gradient distribution will be destroyed, causing flow instability problems.

[0004] Based on this, a method for preparing a micro-nano stacked structure with a controllable layer sequence distribution with a high number of layers is provided, which can achieve controllability in the number of prepared layers and layer thickness to solve the problem of large-scale equipment and flow instability caused by the high number of layers. Summary of the invention

[0005] The purpose of the present invention is to provide a method for preparing a micro-nano stacked structure with controllable layer sequence distribution, so as to solve the problems existing in the above-mentioned prior art, realize the preparation of a micro-nano stacked structure with a high number of layers and layer thicknesses, and the equipment is smaller to ensure flow stability.

[0006] To achieve the above object, the present invention provides the following solutions:

[0007] The present invention provides a method for preparing a micro-nano stacked structure with controllable layer sequence distribution, wherein an initial stacked layer is passed through at least one non-uniform stacker connected in series to form a micro-nano stacked structure; the initial stacked layer comprises at least one unit layer, the unit layer comprises at least one first layer body and at least one second layer body, the first layer body and the second layer body are made of different materials, and the first layer body and the second layer body in the unit layer are arranged in an up-down staggered manner; the non-uniform stacker comprises a first flow diversion channel and a second flow diversion channel, the first flow diversion channel comprises a first flow diversion inlet and a first flow diversion outlet, the first flow diversion channel comprises a first flow diversion inlet and a first flow diversion outlet, and the second flow diversion outlet comprises a first flow diversion inlet and a first flow diversion outlet. The first diverter microlayer flows out of a diverter outlet; the second diverter channel has a second diverter inlet and a second diverter outlet, and the second diverter microlayer flows out of the second diverter outlet; the first diverter microlayer has the same width as the second diverter microlayer, and the height of the first diverter microlayer is different from the height of the second diverter microlayer; the initial stacked layer flows out from the corresponding first diverter outlet and the second diverter outlet respectively after diversion at the first diverter inlet and the second diverter inlet; the first diverter microlayer and the second diverter microlayer are reunited in an upper and lower stacked structure.

[0008] Preferably, there are a plurality of unit layers, each of which is stacked up and down in sequence, and each of the first layer bodies and each of the second layer bodies in the initial stacking layer are alternately arranged up and down in sequence.

[0009] Preferably, the output material of the last non-uniform stacker forms the micro-nano stacked structure after passing through a twist stacker; the twist stacker has a first twist channel and a second twist channel, the first twist channel has a first twist inlet and a first twist outlet, and the first twist outlet flows out of the first twist microlayer; the second twist channel has a second twist inlet and a second twist outlet, and the second twist outlet flows out of the second twist microlayer; the output material of the last non-uniform stacker is divided at the first twist inlet and the second twist inlet and flows out from the corresponding first twist outlet and the second twist outlet respectively; the first twist microlayer and the second twist microlayer are reunited in an upper and lower stacked structure; the overall layer arrangement of the input material of the first twist inlet is consistent with the overall layer arrangement of the first twist microlayer after being turned over 180°, and the overall layer arrangement of the input material of the second twist inlet is consistent with the overall layer arrangement of the second twist microlayer; or, the overall layer arrangement of the input material of the first twist inlet is consistent with the overall layer arrangement of the first twist microlayer, and the overall layer arrangement of the input material of the second twist inlet is consistent with the overall layer arrangement of the second twist microlayer after being turned over 180°.

[0010] Preferably, the initial stacking layer passes through at least one uniform layer stacker connected in series and then passes through at least one non-uniform layer stacker connected in series to form the micro-nano stacking structure; the uniform layer stacker is used to evenly divide and multiply the incoming material into upper and lower stacking structures; the output port of the last uniform layer stacker is connected to the input port of the first non-uniform layer stacker.

[0011] Preferably, the first diversion inlet and the second diversion inlet are located at the same position, and the first diversion inlet and the second diversion inlet are distributed left and right; the first diversion outlet and the second diversion outlet are located at the same position, and the first diversion outlet and the second diversion outlet are distributed up and down; the width of the first diversion inlet is W A , the width of the second branch inlet is W B The heights of the first branch inlet and the second branch inlet are both H; the widths of the first branch outlet and the second branch outlet are both W, and the height of the first branch outlet is H A , the height of the second branch outlet is H B ; Where W = W A +W B , H=H A +H B .

[0012] Preferably, the unit layer includes a first layer body and a second layer body; the raw material for forming the first layer body is supplied to a first plasticizing device, and the raw material for forming the second layer body is supplied to a second plasticizing device; the first plasticizing device and the second plasticizing device are respectively connected to the input end of the confluence, and the output end of the confluence is used to output the unit layer.

[0013] Preferably, the first plasticizing device and the second plasticizing device both include a melt pump and an extruder; and the rotation speeds of the two melt pumps are adjustable.

[0014] Preferably, the first twisted microlayer and the second twisted microlayer are symmetrically distributed.

[0015] Compared with the prior art, the present invention has achieved the following technical effects:

[0016] The present invention provides a method for preparing a micro-nano stacked structure with controllable layer sequence distribution. The initial stacked layer can be diverted by designing a first diverter channel and a second diverter channel. After being separated by the first diverter channel and the second diverter channel, each part is shaped such as widened and thinned, so that the first diverter microlayer and the second diverter microlayer have a specific height difference. This allows the thickness of each layer in the re-merged micro-nano stacked structure to be accurately controlled by adjusting the parameters of the diverter channel and the parameters of the initial layer body, which is conducive to preparing a structure with different layer thickness sequence distributions, that is, forming a micro-nano stacked structure with specific performance requirements; the first layer body and the second layer body in the unit layer are arranged in an up-and-down staggered stacking arrangement, so that the initial stacked layer entering the non-uniform stacker has a richer layer structure, forming different material combinations and stacking sequences, and realizing the regulation of multiple performances; the preparation of the micro-nano stacked structure can be realized by a plurality of non-uniform stackers connected in series, and the equipment is smaller and occupies less space. When passing through a single non-uniform stacker, it will only be divided into two streams and then merged, which can ensure flow stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0018] Figure 1 A schematic diagram of the structure of a non-uniform layer stacker in the method for preparing a micro-nano layer stack structure with controllable layer sequence distribution provided by the present invention;

[0019] Figure 2 A schematic diagram of the structure of a twisting stacker in the method for preparing a micro-nano stacked structure with controllable layer sequence distribution provided by the present invention;

[0020] Figure 3 A preparation process of forming a micro-nano stacked structure by using a plurality of non-uniform stackers in the preparation method of a micro-nano stacked structure with controllable layer sequence distribution provided by the present invention;

[0021] Figure 4 For the Sutra Figure 3 Schematic diagram of the formation process of the layer structure in the micro-nano stacked structure formed by the preparation process;

[0022] Figure 5 The preparation process of the micro-nano stacked structure with controllable layer sequence distribution provided by the present invention is that the initial two initial stacking layers are formed by multiple non-uniform stackers and twist stackers to form the micro-nano stacked structure;

[0023] Figure 6 For the Sutra Figure 5 Schematic diagram of the formation process of the layer structure in the micro-nano stacked structure with a gradient positive order symmetrical distribution in the preparation process;

[0024] Figure 7 For the Sutra Figure 5 Schematic diagram of the formation process of the layer structure in the micro-nano stacked structure with gradient inverse symmetrical distribution in the preparation process;

[0025] Figure 8 In the preparation method of the micro-nano stacked structure with controllable layer sequence distribution provided by the present invention, the initial stacking layers of the initial multiple layers are formed by multiple uniform stackers and multiple non-uniform stackers to form a micro-nano stacked structure;

[0026] Fig. 9 For the Sutra Figure 8 Schematic diagram of the formation process of the layer structure in the micro-nano stacked structure formed by the preparation process;

[0027] Fig.10 The preparation process corresponding to the micro-nano stacked structure of specific case 1;

[0028] Fig.11 The sequence distribution corresponding to the micro-nano stacked structure of specific case 1;

[0029] Fig.12 The preparation process corresponding to the micro-nano stacked structure of specific case 2;

[0030] Fig.13 The sequence distribution corresponding to the micro-nano stacked structure of specific case 2;

[0031] Fig.14 The preparation process corresponding to the micro-nano stacked structure of specific case 3;

[0032] Fig.15 The sequence distribution corresponding to the micro-nano stacked structure of specific case 3;

[0033] Fig.16 The preparation process corresponding to the micro-nano stacked structure of specific case 4;

[0034] Fig.17 The sequence distribution corresponding to the micro-nano stacked structure of specific case 4;

[0035] Fig.18 The preparation process corresponding to the micro-nano stacked structure of specific case 5;

[0036] Fig.19 The sequence distribution corresponding to the micro-nano stacked structure of specific case 5;

[0037] Fig. 20 The preparation process corresponding to the micro-nano stacked structure of specific case 6;

[0038] Fig.21 The sequence distribution corresponding to the micro-nano stacked structure of specific case 6;

[0039] Fig. 22 The preparation process corresponding to the micro-nano stacked structure of specific case 7;

[0040] Fig.23 The sequence distribution corresponding to the micro-nano stacked structure of specific case 7;

[0041] Fig.24 The preparation process corresponding to the micro-nano stacked structure of specific case 8;

[0042] Fig.25 The sequence distribution corresponding to the micro-nano stacked structure of specific case 8;

[0043] Fig.26 The preparation process corresponding to the micro-nano stacked structure of specific case 9;

[0044] Fig. 27 The sequence distribution corresponding to the micro-nano stacked structure of specific case 9;

[0045] Fig.28 The preparation process corresponding to the micro-nano stacked structure of specific case 10;

[0046] Fig.29 The sequence distribution corresponding to the micro-nano stacked structure of the specific case 10;

[0047] Fig.30 The preparation process corresponding to the micro-nano stacked structure of specific case 11;

[0048] Fig.31 The sequence distribution corresponding to the micro-nano stacked structure of the specific case 11;

[0049] Fig.32 The preparation process corresponding to the micro-nano stacked structure of specific case 12;

[0050] Fig.33 The sequence distribution corresponding to the micro-nano stacked structure of the specific case 12;

[0051] Fig.34 The preparation process corresponding to the micro-nano stacked structure of specific case 13;

[0052] Fig.35 The sequence distribution corresponding to the micro-nano stacked structure of the specific case 13;

[0053] Fig.36 A 256-layer gradient micro-nano stacked film prepared by the method for preparing a micro-nano stacked structure with controllable layer sequence distribution provided by the present invention;

[0054] Fig.37A 512-layer gradient micro-nano stacked film prepared by the method for preparing a micro-nano stacked structure with controllable layer sequence distribution provided by the present invention.

[0055] In the figure: 1-first diversion channel; 2-second diversion channel; 3-first torsion channel; 4-second torsion channel. DETAILED DESCRIPTION

[0056] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0057] The purpose of the present invention is to provide a method for preparing a micro-nano stacked structure with controllable layer sequence distribution, so as to solve the problems existing in the prior art and realize the preparation of a micro-nano stacked structure with a high number of layers and layer thicknesses, and the equipment is smaller to ensure flow stability.

[0058] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0059] Embodiment 1

[0060] This embodiment provides a method for preparing a micro-nano stacked structure with controllable layer sequence distribution, such as Figure 1 to Figure 37 As shown, the initial stacking layer is passed through at least one non-uniform stacker connected in series to form a micro-nano stacking structure; the initial stacking layer includes at least one unit layer, the unit layer includes at least one first layer body and at least one second layer body, the first layer body and the second layer body are made of different materials, and the first layer body and the second layer body in the unit layer are arranged in an up-down staggered manner; the non-uniform stacker has a first diversion channel 1 and a second diversion channel 2, the first diversion channel 1 has a first diversion inlet and a first diversion outlet, and the first diversion outlet flows out of the first diversion microlayer; the second diversion channel 2 has a second diversion inlet and a second diversion outlet, and the second diversion outlet flows out of the second diversion microlayer The first and second flow-dividing microlayers have the same width, and the first and second flow-dividing microlayers have different heights. The initial stacked layers are divided at the first and second flow-dividing inlets and flow out from the corresponding first and second flow-dividing outlets respectively (i.e., the initial stacked layers are divided into two flows at the inlet of the non-uniform stacker, one flow flows out from the first flow-dividing outlet through the first flow-dividing channel 1 to form the first flow-dividing microlayer, and the other flow flows out from the second flow-dividing outlet through the second flow-dividing channel 2 to form the second flow-dividing microlayer); the outflowing first flow-dividing microlayer and the outflowing second flow-dividing microlayer are reunited in an upper and lower stacking structure.

[0061] Through the design of the first diversion channel 1 and the second diversion channel 2, the initial stacking layer can be diverted, and after being separated by the first diversion channel 1 and the second diversion channel 2, each part is shaped such as widening and thinning, so that the first diversion microlayer and the second diversion microlayer have a specific height difference, so that the thickness of each layer in the re-merged micro-nano stacking structure can be accurately controlled by adjusting the parameters of the diversion channel and the parameters of the initial layer body, which is conducive to the preparation of structures with different layer thickness sequence distributions, that is, the formation of a micro-nano stacking structure with specific performance requirements; the first layer body and the second layer body in the unit layer are arranged in an up-and-down staggered stacking arrangement, so that the initial stacking layer entering the non-uniform stacker has a richer layer structure, forming different material combinations and stacking sequences, and realizing the regulation of multiple performances; it can realize the preparation of the micro-nano stacking structure by a plurality of non-uniform stackers connected in series, and the equipment is smaller and occupies less space, and when passing through a single non-uniform stacker, it will only be separated into two streams and then merged, which can ensure flow stability.

[0062] Among them, the relevant instructions for the initial stacking layer are:

[0063] In the optional scheme of this embodiment, it is more preferred that Figure 4 As shown, there are multiple unit layers, each unit layer is stacked up and down in sequence, and each first layer body and each second layer body in the initial stacking layer are alternately arranged up and down in sequence (that is, first layer body, second layer body, first layer body...).

[0064] Specifically, taking the micro-nano stacked structure for preparing an optical film as an example, the formation of the unit layer is described as follows:

[0065] In the optional scheme of this embodiment, it is more preferred that Figure 4 As shown, when the unit layer includes a first layer body (such as a high refractive index layer) and a second layer body (such as a low refractive index layer); the raw material for forming the first layer body is supplied to the first plasticizing device, and the raw material for forming the second layer body is supplied to the second plasticizing device; the first plasticizing device and the second plasticizing device are respectively connected to the input end of the confluence, and the output end of the confluence is used to output the unit layer.

[0066] In the optional scheme of this embodiment, it is more preferred that Figure 3 As shown, the first plasticizing device and the second plasticizing device both include a melt pump and an extruder (which is the prior art, and its connection and related unmentioned parts are consistent with the prior art, and will not be described in detail here); and the rotation speeds of the two melt pumps are adjustable.

[0067] Specifically, by adjusting the rotation speed ratio of the two melt pumps, the desired thickness ratio of the first layer and the second layer can be controlled.

[0068] Specifically, regarding the number of layers of the unit layer, it may include but is not limited to the following situations: ① The first situation: the unit layer is a two-layer structure formed by stacking the first layer and the second layer up and down; ② The second situation: the unit layer is a four-layer structure formed by stacking the first layer and the second layer up and down in sequence.

[0069] Among them, the relevant settings of the non-uniform stacker are as follows:

[0070] Specifically, the first diversion channel 1 and the second diversion channel 2 are staggeredly arranged in an overpass-like manner, with their inlets being parallelly distributed left and right and their outlets being parallelly distributed up and down.

[0071] In the optional scheme of this embodiment, it is more preferred that Figure 1 As shown, the first branch inlet and the second branch inlet are located at the same position, and the first branch inlet and the second branch inlet are distributed left and right; the first branch outlet and the second branch outlet are located at the same position, and the first branch outlet and the second branch outlet are distributed up and down; the width of the first branch inlet is W A , the width of the second branch inlet is W B , the height of the first branch inlet and the second branch inlet are both H; the width of the first branch outlet and the width of the second branch outlet are both W, and the height of the first branch outlet is H A , the height of the second branch outlet is H B ; Where W = W A +W B , H=H A +H B The spatial volume of the first branch channel 1 is V A , the spatial volume of the second branch channel 2 is V B , V A / V B =R. (V A Correlated with the inlet and outlet dimensions of the corresponding first diversion channel 1 / first torsion channel 3, V B It is associated with the inlet and outlet dimensions of the corresponding second diversion channel 2 / second torsion channel 4, that is, R is associated with the inlet and outlet dimensions of the first diversion channel 1 and the second diversion channel 2 (or the first torsion channel 3 and the second torsion channel 4), and the focus is on the explanation of the principle of its formation, and its various data settings can be set accordingly according to the required results) by setting the above related parameters of the non-uniform stacker, the layer structure of the desired output result can be achieved, thereby achieving controllability of the output result.

[0072] When an initial stacking layer with m layers (m≥2) flows through a non-uniform stacker, it is cut into two layer stacks A and B with different widths at the inlet end. The two layers widen and thin when flowing forward in their respective channels, and reconverge and overlap in the thickness direction at the outlet end to form a layer stack C containing layer stacks A and B, wherein the thickness ratio of the internal layer stack A to the layer stack B is R, and the number of layers in layer stack C is 2m.

[0073] When the initial stacking layer with m layers (m ≥ 2) flows through n non-uniform stacking devices with different R values ​​connected in series, a stacking layer with mx2 layers can be formed. n , and has 2 n The micro-nano stacked structure with layer stacking thickness distribution, preferably, when n non-uniform stackers are connected in series according to their R values ​​from large to small or from small to large, 2 n Gradient control of layer stack thickness.

[0074] Among them, the relevant setting instructions for the torsion stacker are:

[0075] In the optional scheme of this embodiment, it is more preferred that Figure 2 , Figure 5 to Figure 7 As shown, the output material of the last non-uniform stacker forms a micro-nano stacking structure after passing through a twist stacker; the twist stacker has a first twist channel 3 and a second twist channel 4, the first twist channel 3 has a first twist inlet and a first twist outlet, and the first twist outlet flows out of the first twist microlayer; the second twist channel 4 has a second twist inlet and a second twist outlet, and the second twist outlet flows out of the second twist microlayer; the output material of the last non-uniform stacker is divided at the first twist inlet and the second twist inlet and flows out from the corresponding first twist outlet and the second twist outlet respectively; the outflowing first twist microlayer and the outflowing second twist microlayer are reunited in an upper and lower stacking structure; The overall layer arrangement of the input material of a twisted inlet is consistent with the overall layer arrangement of the first twisted microlayer after being flipped 180° (herein, the type of layer arrangement is consistent, for example, the layer structure arrangement of the input material of the first twisted inlet is ABABAB.....B, and the layer structure arrangement after being flipped 180° is BABA......A), and the overall layer arrangement of the input material of the second twisted inlet is consistent with the overall layer arrangement of the second twisted microlayer; or, the overall layer arrangement of the input material of the first twisted inlet is consistent with the overall layer arrangement of the first twisted microlayer, and the overall layer arrangement of the input material of the second twisted inlet is consistent with the overall layer arrangement of the second twisted microlayer after being flipped 180°.

[0076] Specifically, the twisted stacker is formed by flipping one of the channels (the first branch channel 1 or the second branch channel 2) by 180° based on the non-uniform stacker structure. Figure 2As shown, the signs represented by the channel dimensions of the twisted stacker are consistent with the signs represented by the channel dimensions of the non-uniform stacker.

[0077] Specifically, when the first twisted microlayer and the second twisted microlayer are symmetrically distributed, the twisted stacker is a symmetrical twisted stacker, that is, the output material of the last non-uniform stacker is divided into two identical streams, and each stream is output through the first twisted channel 3 and the second twisted channel 4 respectively. The output material is essentially two identical structures, but one of them is output in the form of an overall flip of 180° after passing through the corresponding flip channel.

[0078] Specifically, when the torsional stacker is a symmetrical torsional stacker, the inlet and outlet sizes of the two fishtail channels of the first torsional channel 3 and the second torsional channel 4 are the same, and one of the channels (the first torsional channel 3 or the second torsional channel 4) is twisted 180 degrees along the flow direction. When a micro-nano stacked structure with multiple layer stacking distribution thicknesses flows through the symmetrical torsional stacker, it is cut into two layer stacks X and Y with the same width and height at the inlet end. The two are widened and thinned when flowing forward in their respective channels, and re-converge and overlap in the thickness direction of the outlet end to form a layer stack Z including layer stacks X and Y, wherein the layer stack in the torsional channel is symmetrically flipped 180 degrees to form a micro-nano stacked structure with a symmetrical distribution of layer stacking thickness. Preferably, when a micro-nano stacked melt flow with a gradual change in layer stacking thickness passes through a symmetrical torsional stacker, a micro-nano stacked structure with a gradient change in layer stacking thickness and a symmetrical distribution can be prepared.

[0079] Among them, the relevant settings of the averaging stacker are as follows:

[0080] In the optional scheme of this embodiment, it is more preferred that Figure 8 As shown, the initial stacking layer passes through at least one uniform layer stacker connected in series and then passes through at least one non-uniform layer stacker connected in series to form a micro-nano stacking structure; the uniform layer stacker is used to evenly divide and multiply the incoming material in the upper and lower stacking structures; the output port of the last uniform layer stacker is connected to the input port of the first non-uniform layer stacker.

[0081] Specifically, the uniform layer stacker is an existing device for equally dividing the input material and outputting the same layer structure and reuniting them in an upper and lower stacking manner to achieve uniform division and multiplication of the layer structure of the material. It is an existing equipment and existing technology and will not be described in detail here.

[0082] Among them, regarding the combination method:

[0083] Specifically, on the basis of preparing the micro-nano stacking structure with multiple non-uniform layer stackers, three combinations including but not limited to the following can be derived: ① The first type: multiple non-uniform layer stackers are matched with a twisting stacker; ② The second type: multiple uniform layer stackers are matched with multiple non-uniform layer stackers; ③ The third type: multiple uniform layer stackers are matched with multiple non-uniform layer stackers and twisting stackers in sequence.

[0084] Among them, regarding other related instructions:

[0085] Specifically, the method for preparing a micro-nano stacked structure with controllable layer sequence distribution provided in this embodiment can be used to introduce a micro-nano stacked structure with a corresponding layer sequence arrangement into polymer films, sheets, tubes and hollow containers; for example, it can be used in combination with blown film forming technology to form a blown film preparation of a gradient micro-nano stacked film; it can be used in combination with blow molding technology to form a blow molding preparation of a gradient micro-nano stacked hollow product; it can be used in combination with cast / calendering technology to form a cast / calendering preparation of a gradient micro-nano stacked sheet / film.

[0086] Specific case 1:

[0087] This case discloses a method for preparing a micro-nano stacked structure with controllable gradient layer sequence distribution. The preparation process and layer structure distribution are as follows: Fig.10 and Fig.11 As shown. The feed of the two extruders A and B (i.e., the extruders of the corresponding first plasticizing device and the second plasticizing device, the following cases have the same meaning and will not be repeated) passes through the confluence to form an initial 2-layer structure (i.e., unit layer, the following cases have the same meaning and will not be repeated), and flows through 4 series-connected 1:1 uniform layer stackers in sequence to form an initial 32-layer uniform layer stack, and the 32-layer melt stack flows through 5 non-uniform layer stackers 1 (0.92 / 1, i.e., R value), non-uniform layer stacker 2 (0.85 / 1), non-uniform layer stacker 3 (0.72 / 1), non-uniform layer stacker 4 (0.51 / 1), and non-uniform layer stacker 5 (0.26 / 1) with increasing segmentation ratios, forming 32 layer thickness distributions, each with 32 layers of layer thickness distribution, a total of 1024 layers of gradient micro-nano stacking structure.

[0088] Specific case 2

[0089] This case discloses a method for preparing a micro-nano stacked structure with controllable gradient layer sequence distribution. The preparation process and layer structure distribution are as follows: Fig.12 and Fig.13As shown. The feed from the two extruders A and B passes through the confluence to form an initial 2-layer structure, and then flows through four series-connected non-uniform stackers to form an initial 32-layer non-uniform structure. The 32-layer gradient layer thickness melt pile flows through five non-uniform stackers 1 (0.92 / 1), non-uniform stacker 2 (0.85 / 1), non-uniform stacker 3 (0.72 / 1), non-uniform stacker 4 (0.51 / 1), and non-uniform stacker 5 (0.26 / 1) with increasing segmentation ratios. The total number of layers is 1024 and the layer thickness is uniformly and gradually changing. The gradient micro-nano stacking structure eliminates the gradient steps caused by the previous equilibrating process.

[0090] Specific case 3

[0091] This case discloses a method for preparing a micro-nano stacked structure with controllable gradient layer sequence distribution. The preparation process and layer structure distribution are as follows: Fig.14 and Fig.15 As shown. The feed from the two extruders A and B passes through the confluence to form an initial 2-layer structure, and then flows through four series-connected non-uniform stackers a, non-uniform stackers b, non-uniform stackers c, and non-uniform stackers d in sequence to form an initial 32-layer layer thickness gradient structure. The 32-layer gradient layer thickness melt stack flows through five non-uniform stackers 1 (0.92 / 1), non-uniform stackers 2 (0.85 / 1), non-uniform stackers 3 (0.72 / 1), non-uniform stackers 4 (0.51 / 1), and non-uniform stackers 5 (0.26 / 1) with increasing segmentation ratios, to obtain a multilayer melt with a total number of 1024 layers and uniform and gradual layer thickness, and then flows through a twisting stacker. The multilayer melt is twisted 180° and multiplied in the twisting stacker flow channel to form a gradient micro-nano stacked structure with a total number of 2048 layers and uniform and gradual layer thickness symmetrical distribution.

[0092] Specific case 4

[0093] This case discloses a method for preparing a micro-nano stacked structure with controllable gradient layer sequence distribution. The preparation process and layer structure distribution are as follows: Fig.16 and Fig.17 As shown. The feed from the two extruders A and B passes through the confluence to form an initial two-layer equal thickness structure. The two layers of melt flow through five non-uniform layer stackers 1 (0.95 / 1), non-uniform layer stacker 2 (0.90 / 1), non-uniform layer stacker 3 (0.82 / 1), non-uniform layer stacker 4 (0.66 / 1), and non-uniform layer stacker 5 (0.45 / 1) with increasing segmentation ratios, forming a 64-layer nonlinear gradient micro-nano stacked structure with 2 layers per layer thickness distribution and a gradient ratio of 4.9 and 32 layer thickness distributions.

[0094] Specific case 5

[0095] This case discloses a method for preparing a micro-nano stacked structure with controllable gradient layer sequence distribution. The preparation process and layer structure distribution are as follows: Fig.18and Fig.19 As shown. The feed from the two extruders A and B passes through the confluence to form an initial two-layer equal thickness structure. The two layers of melt flow through four non-uniform layer stackers 1 (0.99 / 1), non-uniform layer stacker 2 (0.97 / 1), non-uniform layer stacker 3 (0.93 / 1), and non-uniform layer stacker 4 (0.87 / 1) with increasing segmentation ratios, forming a 32-layer linear gradient micro-nano stacking structure with 2 layers per layer thickness distribution and a gradient ratio of 1.3 and 16 layer thickness distributions.

[0096] Specific case 6

[0097] This case discloses a method for preparing a micro-nano stacked structure with controllable gradient layer sequence distribution. The preparation process and layer structure distribution are as follows: Fig. 20 and Fig.21 As shown. The feed from the two extruders A and B passes through the confluence to form an initial two-layer equal thickness structure. The two layers of melt flow through five non-uniform layer stackers 1 (0.99 / 1), non-uniform layer stacker 2 (0.97 / 1), non-uniform layer stacker 3 (0.92 / 1), non-uniform layer stacker 4 (0.84 / 1), and non-uniform layer stacker 5 (0.55 / 1) with increasing segmentation ratios to form a 64-layer linear step gradient micro-nano stacking structure with 2 layers of each layer thickness distribution and a gradient ratio of 2.7 and 32 layer thickness distributions.

[0098] Specific case 7

[0099] This case discloses a method for preparing a micro-nano stacked structure with controllable gradient layer sequence distribution. The preparation process and layer structure distribution are as follows: Fig. 22 and Fig.23 As shown. The feed from the two extruders A and B passes through the confluence to form an initial two-layer equal thickness structure. The two layers of melt flow through five non-uniform layer stackers 1 (0.99 / 1), non-uniform layer stacker 2 (0.97 / 1), non-uniform layer stacker 3 (0.92 / 1), non-uniform layer stacker 4 (0.84 / 1), and non-uniform layer stacker 5 (0.90 / 1) with increasing segmentation ratios to form a 64-layer linear step gradient micro-nano stacking structure with 2 layers per layer thickness distribution and a gradient ratio of 1.5 and 32 layer thickness distributions.

[0100] Specific case 8

[0101] This case discloses a method for preparing a micro-nano stacked structure with controllable gradient layer sequence distribution. The preparation process and layer structure distribution are as follows: Fig.24 and Fig.25As shown. The feed from the two extruders A and B passes through the confluence to form an initial two-layer equal thickness structure. The two layers of melt flow through five non-uniform stackers 1 (0.95 / 1), non-uniform stacker 2 (0.90 / 1), non-uniform stacker 3 (0.82 / 1), non-uniform stacker 4 (0.66 / 1), and non-uniform stacker 5 (0.45 / 1) with increasing segmentation ratios to form 2 layers of each layer thickness distribution, a gradient ratio of 4.9, and 64 layers of melt with 32 layer thickness distributions. After that, the multi-layer melt flows through the twisting stacker, twists 180° in the twisting stacker flow channel and multiplies, forming a gradient micro-nano stacking structure with a total of 128 layers and symmetrical layer thickness distribution.

[0102] Specific case 9

[0103] This case discloses a method for preparing a micro-nano stacked structure with controllable gradient layer sequence distribution. The preparation process and layer structure distribution are as follows: Fig.26 and Fig. 27 As shown. The feed from the two extruders A and B passes through the confluence to form an initial 2-layer equal thickness structure. The 2-layer melt flows through 4 non-uniform stackers 1 (0.99 / 1), non-uniform stacker 2 (0.97 / 1), non-uniform stacker 3 (0.93 / 1), and non-uniform stacker 4 (0.87 / 1) with increasing segmentation ratios to form 2 layers of each layer thickness distribution, 32 layers of melt with a gradient ratio of 1.5 and 16 layer thickness distributions. After that, the multi-layer melt flows through the twisting stacker and is twisted 180° and multiplied in the flow channel of the twisting stacker, forming a gradient micro-nano stacking structure with a total of 64 layers and symmetrical layer thickness distribution.

[0104] Specific case 10

[0105] This case discloses a method for preparing a micro-nano stacked structure with controllable gradient layer sequence distribution. The preparation process and layer structure distribution are as follows: Fig.28 and Fig.29 As shown. The feed from the two extruders A and B passes through the confluence to form an initial 2-layer equal thickness structure. The 2 layers of melt flow through 2 uniform layer stackers to form an 8-layer melt stack, and then flow through 4 non-uniform layer stackers 1 (0.99 / 1), non-uniform layer stacker 2 (0.97 / 1), non-uniform layer stacker 3 (0.93 / 1), and non-uniform layer stacker 4 (0.87 / 1) with increasing segmentation ratios to form a linear gradient micro-nano stacking structure with 128 layers of 8 layers of each layer thickness distribution and a gradient ratio of 1.5 and 16 layer thickness distributions.

[0106] Specific case 11

[0107] This case discloses a method for preparing a micro-nano stacked structure with controllable gradient layer sequence distribution. The preparation process and layer structure distribution are as follows: Fig.30 and Fig.31As shown. The feed from the two extruders A and B passes through the confluence to form an initial 2-layer equal thickness structure. The 2-layer melt flows through 2 uniform layer stackers to form an 8-layer melt stack, and then flows through 5 non-uniform layer stackers 1 (0.95 / 1), non-uniform layer stacker 2 (0.90 / 1), non-uniform layer stacker 3 (0.82 / 1), non-uniform layer stacker 4 (0.66 / 1), and non-uniform layer stacker 5 (0.45 / 1) with increasing segmentation ratios, forming a 256-layer nonlinear gradient micro-nano stacked structure with 8 layers per layer thickness distribution and a gradient ratio of 4.9 and 32 layer thickness distributions.

[0108] Specific case 12

[0109] This case discloses a method for preparing a micro-nano stacked structure with controllable gradient layer sequence distribution. The preparation process and layer structure distribution are as follows: Fig.32 and Fig.33 As shown. The feed from the two extruders A and B passes through the confluence to form an initial two-layer non-uniform thickness structure. The two layers of melt flow through two non-uniform layer stackers to form an 8-layer melt stack with a small gradient, and then flow through five non-uniform layer stackers 1 (0.95 / 1), non-uniform layer stacker 2 (0.90 / 1), non-uniform layer stacker 3 (0.82 / 1), non-uniform layer stacker 4 (0.66 / 1), and non-uniform layer stacker 5 (0.45 / 1) with increasing division ratios, forming a gradient micro-nano stacking structure with a gradient ratio of 4.9, a total of 256 layers, and uniform nonlinear gradual thickness, eliminating the gradient steps caused by the previous equalization process.

[0110] Specific case 13

[0111] This case discloses a method for preparing a micro-nano stacked structure with controllable gradient layer sequence distribution. The preparation process and layer structure distribution are as follows: Fig.34 and Fig.35 As shown. The feed from the two extruders A and B passes through the confluence to form an initial two-layer non-uniform thickness structure. The two layers of melt flow through two non-uniform layer stackers to form an 8-layer melt stack with a small gradient, and then flow through four non-uniform layer stackers 1 (0.99 / 1), non-uniform layer stacker 2 (0.97 / 1), non-uniform layer stacker 3 (0.83 / 1), and non-uniform layer stacker 4 (0.87 / 1) with increasing division ratios, forming a gradient micro-nano stacking structure with a gradient ratio of 1.3, a total of 128 layers, and uniform linear gradient of layer thickness, eliminating the gradient steps caused by the previous equalization process.

[0112] The present invention uses specific examples to illustrate the principles and implementation methods of the present invention. The above examples are only used to help understand the method and core ideas of the present invention. At the same time, for those skilled in the art, according to the ideas of the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A method for preparing a micro-nano stacked structure with controllable layer sequence distribution, characterized in that: The initial stacked layer is passed through at least one non-uniform stacker connected in series to form a micro-nano stacked structure; The initial stacking layer includes at least one unit layer, the unit layer includes at least one first layer body and at least one second layer body, the first layer body and the second layer body are made of different materials, and the first layer body and the second layer body in the unit layer are sequentially stacked up and down in an alternating manner; The non-uniform stacker has a first flow diversion channel and a second flow diversion channel, the first flow diversion channel has a first flow diversion inlet and a first flow diversion outlet, and the first flow diversion outlet flows out a first flow diversion microlayer; The second flow diversion channel has a second flow diversion inlet and a second flow diversion outlet, and the second flow diversion outlet flows out of a second flow diversion microlayer; The first flow dividing microlayer has the same width as the second flow dividing microlayer, and the height of the first flow dividing microlayer is different from the height of the second flow dividing microlayer; The initial stacked layer flows out from the first diversion outlet and the second diversion outlet respectively after diversion at the first diversion inlet and the second diversion inlet; the first diversion microlayer and the second diversion microlayer are reunited in a stacked structure.

2. The method for preparing a micro-nano stacked structure with controllable layer sequence distribution according to claim 1, characterized in that: There are a plurality of unit layers, each of which is stacked up and down in sequence, and each of the first layer bodies and each of the second layer bodies in the initial stacking layer are alternately arranged up and down in sequence.

3. The method for preparing a micro-nano stacked structure with controllable layer sequence distribution according to claim 1, characterized in that: The output material of the last non-uniform layer stacker passes through a twisting stacker to form the micro-nano stacked structure; The twist stacker has a first twist channel and a second twist channel, the first twist channel has a first twist inlet and a first twist outlet, the first twist outlet flows out a first twisted microlayer; the second twist channel has a second twist inlet and a second twist outlet, the second twist outlet flows out a second twisted microlayer; the output material of the last non-uniform stacker is split at the first twist inlet and the second twist inlet and then flows out from the corresponding first twist outlet and the second twist outlet respectively; the first twisted microlayer and the second twisted microlayer are reunited in a stacked structure; The overall layer arrangement of the input material of the first twisted inlet is consistent with the overall layer arrangement of the first twisted microlayer after being turned over 180 degrees, and the overall layer arrangement of the input material of the second twisted inlet is consistent with the overall layer arrangement of the second twisted microlayer; Alternatively, the overall layer arrangement of the input material of the first twisted inlet is consistent with the overall layer arrangement of the first twisted microlayer, and the overall layer arrangement of the input material of the second twisted inlet is consistent with the overall layer arrangement of the second twisted microlayer after being flipped 180°.

4. The method for preparing a micro-nano stacked structure with controllable layer sequence distribution according to claim 1, characterized in that: The initial stacked layer passes through at least one uniform layer stacker connected in series and then passes through at least one non-uniform layer stacker connected in series to form the micro-nano stacked structure; The uniform layer stacker is used to evenly divide and multiply the incoming materials in an upper and lower stacking structure; The output port of the last uniform layer stacker is communicated with the input port of the first non-uniform layer stacker.

5. The method for preparing a micro-nano stacked structure with controllable layer sequence distribution according to claim 1, characterized in that: The first flow diversion inlet and the second flow diversion inlet are located at the same position, and the first flow diversion inlet and the second flow diversion inlet are distributed left and right; the first flow diversion outlet and the second flow diversion outlet are located at the same position, and the first flow diversion outlet and the second flow diversion outlet are distributed up and down; The width of the first branch inlet is W A , the width of the second branch inlet is W B , the heights of the first branch inlet and the second branch inlet are both H; The width of the first diversion outlet and the width of the second diversion outlet are both W, and the height of the first diversion outlet is H. A , the height of the second branch outlet is H B ; Wherein, W = W A + W B , H = H A + H B .

6. The method for preparing a micro-nano stacked structure with controllable layer sequence distribution according to claim 1, characterized in that: When the unit layer includes a first layer body and a second layer body; the raw material for forming the first layer body is supplied to a first plasticizing device, and the raw material for forming the second layer body is supplied to a second plasticizing device; the first plasticizing device and the second plasticizing device are respectively connected to the input end of the confluence, and the output end of the confluence is used to output the unit layer.

7. The method for preparing a micro-nano stacked structure with controllable layer sequence distribution according to claim 6, characterized in that: The first plasticizing device and the second plasticizing device both include a melt pump and an extruder; and the rotation speeds of the two melt pumps are adjustable.

8. The method for preparing a micro-nano stacked structure with controllable layer sequence distribution according to claim 3, characterized in that: The first twisted microlayer and the second twisted microlayer are symmetrically distributed.

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