Temperature measurement method and temperature measurement system applied to semiconductor equipment

Abstract

The present invention provides a temperature measurement method and system for semiconductor devices. The temperature measurement method includes: after controlling the temperature within a semiconductor device processing chamber according to a target temperature, receiving thermal radiation emitted from the processing chamber via a filter device; receiving and converting optical information of light of a specific wavelength band emitted by the filter device via a photoelectric detection device into voltage information; and determining the measured temperature via a main control device based on the voltage information, a voltage-temperature correspondence function #imgabs0#, and the relationship between the target temperature T and a pre-stored reference temperature. #imgabs1# contains the correspondence between the effective wavelength of the filter device and temperature. This is obtained by measuring and calculating the intensity of thermal radiation emitted by a standard heat source at different set temperatures using a temperature measurement calibration system including the filter device. This method can reduce or avoid temperature measurement deviations caused by the interaction between the measurable wavelength of the photoelectric detection device and the bandwidth of the filter device, resulting in a deviation between the actual center wavelength of the filter device and its labeled center wavelength.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor measurement and control technology, and in particular to a temperature measurement method and a temperature measurement system applied to semiconductor equipment. Background Art

[0002] In the process of growing a semiconductor material layer on a substrate using semiconductor equipment, such as vapor deposition equipment, temperature plays a crucial role in the growth quality of the semiconductor material layer. It is necessary to perform high-precision control and effective monitoring of the temperature of the processing chamber of the semiconductor equipment, such as the reaction chamber, during the growth process.

[0003] In the prior art, when using optical methods to measure thermal radiation in the processing chamber of a high-temperature semiconductor device for temperature monitoring, a filter is used to perform bandpass control on the collected thermal radiation to emit light in a specific wavelength band. A photodetector and a host computer are used to convert the optical information of the light in this specific wavelength band into information related to the radiation energy, and the corresponding measured temperature is calculated using Planck's blackbody radiation formula.

[0004] Planck's blackbody radiation formula is related to wavelength and temperature. Existing technology uses Planck's blackbody radiation formula to calculate the corresponding measured temperature. The wavelength used for calculation is the set center wavelength value of the filter, and the set center wavelength value is a fixed parameter value provided by the manufacturer. However, since the measurable wavelength of the photodetector is a band range rather than a specific wavelength value; the filter in the filter device will inevitably have a certain bandwidth due to the processing accuracy. The mutual influence between the measurable band of the photodetector device and the bandwidth of the filter, there is a certain deviation between the actual center wavelength of the filter and its marked set center wavelength. Please refer to Figure 1 Taking a filter with a bandwidth range of 800-900 nanometers as an example, when the temperature of a blackbody furnace used as a standard heat source is controlled at 400 degrees Celsius, the thermal radiation from the blackbody furnace is filtered by the filter. The light intensity obtained by the spectrometer test shows a significant trend of variation with the bandwidth. Even if the temperature of the blackbody furnace is controlled as high as 2400 degrees Celsius, the light intensity still shows a trend of variation with the bandwidth. It can be seen that whether it is high temperature or low temperature testing, a non-negligible systematic error will be introduced in the temperature measurement process, thereby affecting the accuracy of the temperature measurement data.

[0005] Therefore, a new temperature measurement method and temperature measurement system are urgently needed to improve the above problems. Summary of the Invention

[0006] The purpose of the present invention is to provide a temperature measurement method and a temperature measurement system for semiconductor equipment, which can reduce or avoid the temperature measurement deviation caused by the mutual influence between the measurable band of the photoelectric detection device and the bandwidth of the filter, and the certain deviation between the actual center wavelength of the filter and its marked center wavelength.

[0007] In the first aspect, the temperature measurement method for semiconductor equipment provided by the present invention includes: S0: providing a filter device, a photoelectric detection device, a main control device and a semiconductor device, wherein the main control device pre-stores a voltage-temperature corresponding function ; S1: After controlling the temperature in the processing chamber of the semiconductor device according to the target temperature T, the filter device receives the thermal radiation of the processing chamber and emits the corresponding specific band light; S2: The photoelectric detection device receives and converts the optical information of the specific band light into voltage information; S3: The main control device receives the voltage information and the voltage-temperature corresponding function The measured temperature is obtained by the relationship between the target temperature T and the pre-stored reference temperature; the voltage-temperature corresponding function for:

[0008]

[0009] When the target temperature T does not exceed the reference temperature, When the target temperature T exceeds the reference temperature, ; a, b are constants, and the reference temperature is 700~900 degrees Celsius; The temperature measurement and calibration system including the filter device is used to measure and calculate the intensity of the thermal radiation emitted by the standard heat source at different set temperatures, and the corresponding relationship between the effective wavelength of the filter device and the temperature is obtained. When the temperature control of the standard heat source is the upper limit temperature The corresponding effective wavelength value is calculated based on the corresponding relationship between the effective wavelength of the filter device and the temperature.

[0010] Optional, for ; are polynomial coefficients, and n is a positive integer greater than or equal to 1.

[0011] Optionally, the filtering device includes a bandpass filter, and the bandwidth of the bandpass filter ranges from 50 to 200 nanometers.

[0012] Optionally, before executing step S1, the following steps are executed: S01: providing a standard heat source and a light intensity detection device; S02: measuring the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures by the filter device and the light intensity detection device; S03: calculating by the main control device according to the results of the light intensity measurement to obtain the corresponding effective wavelength value at each set temperature ; S04: The main control device is used to set the corresponding effective wavelength value at each set temperature The corresponding relationship between the effective wavelength and temperature of the filter device is obtained by fitting .

[0013] Optionally, the corresponding effective wavelength value at each set temperature Obtained by the following formula:

[0014]

[0015] in, is the wavelength, is the corresponding spectral response function obtained by measuring the light intensity of the emitted thermal radiation at each set temperature, is the blackbody radiation formula.

[0016] Optionally, the steps of measuring the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures through the filtering device and the light intensity detection device include: controlling the standard heat source to emit each thermal radiation at different set temperatures not lower than 400 degrees Celsius; receiving each thermal radiation through the filtering device and emitting corresponding single light beams; receiving through the light intensity detection device and obtaining each spectral response function based on the light information of each single light beam.

[0017] Optionally, in step S03, the step of calculating by the main control device according to the result of the light intensity measurement includes: calculating by the main control device according to the spectral response function and the blackbody radiation formula to obtain the corresponding effective wavelength value at each set temperature .

[0018] Optionally, the step of controlling the standard heat source to emit each heat radiation separately at different set temperatures not lower than 400 degrees Celsius includes: controlling the standard heat source to emit each heat radiation separately after reaching a corresponding temperature steady state at different set temperatures of 400 to 2000 degrees Celsius.

[0019] Optionally, before executing step S1, the following steps are performed: providing a standard heat source, the main control device pre-stores an initial voltage-temperature corresponding function ; Control the standard heat source to emit thermal radiation at different set temperatures; receive the thermal radiation through the filter device and emit corresponding single light beams; receive the optical information of each single light beam through the photoelectric detection device and convert it into corresponding voltage information; and use the main control device to generate the corresponding voltage information at each set temperature and the initial voltage-temperature corresponding function. Get the a and b constants; ;

[0020] in, The set center wavelength value of the filter device.

[0021] Optionally, the operating wavelength range of the photoelectric detection device is 200~1000 nanometers.

[0022] In a second aspect, the temperature measurement system provided by the present invention includes: a filter device for receiving thermal radiation in a processing chamber of a semiconductor device and emitting light corresponding to a specific wavelength band; a photoelectric detection device, arranged on the light output path of the filter device or connected to the filter device to realize optical communication, for receiving and converting the optical information of the light of the specific wavelength band into voltage information; a main control device, which is communicatively connected to the photoelectric detection device and pre-stores a reference temperature and the voltage-temperature correspondence function , for determining the voltage-temperature correspondence function based on the relationship between the reference temperature and the target temperature controlled in the processing chamber, the voltage information, and the voltage-temperature correspondence function Get the measured temperature; ;

[0023] When the target temperature T does not exceed the reference temperature, When the target temperature T exceeds the reference temperature, ; a, b are constants, and the reference temperature is 700~900 degrees Celsius; The temperature measurement and calibration system including the filter device is used to measure and calculate the intensity of the thermal radiation emitted by the standard heat source at different set temperatures, and the corresponding relationship between the effective wavelength of the filter device and the temperature is obtained. When the temperature control of the standard heat source is the upper limit temperature The corresponding effective wavelength value is calculated based on the corresponding relationship between the effective wavelength of the filter device and the temperature.

[0024] Optional, for ; are polynomial coefficients, and n is a positive integer greater than or equal to 1.

[0025] Optionally, the filtering device includes a bandpass filter, and the bandwidth of the bandpass filter ranges from 50 to 200 nanometers.

[0026] Optionally, the operating wavelength range of the photoelectric detection device is 200~1000 nanometers.

[0027] Compared with the prior art, the temperature measurement method and temperature measurement system of the present invention have the following advantages: the voltage-temperature corresponding function pre-stored in the main control device , in The temperature measurement and calibration system including the filter device is used to measure and calculate the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures, and the corresponding relationship between the effective wavelength of the filter device and the temperature is obtained. This is helpful to reduce or avoid the temperature measurement deviation caused by the mutual influence between the measurable band of the photoelectric detection device and the bandwidth of the filtering device, and the deviation between the actual center wavelength of the filtering device and its marked center wavelength. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 This is a trend chart showing how the intensity of light emitted by a spectrometer after using the same filter to receive thermal radiation from blackbody furnaces of different temperatures varies with the wavelength range of the filter.

[0029] Figure 2 A schematic diagram of the assembly of a semiconductor device and a temperature measuring device provided by an embodiment of the present invention;

[0030] Figure 3 A flow chart of a temperature measurement method provided in an embodiment of the present invention;

[0031] Figure 4 A structural block diagram of a temperature measurement and calibration system for obtaining the corresponding relationship between the effective wavelength and temperature of a filter device provided in an embodiment of the present invention;

[0032] Figure 5 A flow chart for obtaining the corresponding relationship between the effective wavelength and temperature of a filter device provided in an embodiment of the present invention;

[0033] Figure 6 A schematic diagram of a spectral response function curve provided by an embodiment of the present invention;

[0034] Figure 7 A corresponding relationship curve between the effective wavelength and temperature of the filter device obtained by fitting the corresponding effective wavelength at each set temperature of the standard heat source provided in an embodiment of the present invention;

[0035] Figure 8 A comparison diagram of the trend of the measured temperature deviation value before and after correction as the measured temperature changes, provided in an embodiment of the present invention;

[0036] Figure 9 This is a comparison diagram of the trend of the deviation value of the measured temperature before and after correction as the measured temperature changes in an embodiment of the present invention. DETAILED DESCRIPTION

[0037] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be the common meanings understood by people with ordinary skills in the field to which the present invention belongs. The words "including" and similar words used in this article mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0038] In the present invention, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance. The term "plurality" refers to two or more, unless otherwise clearly defined.

[0039] The present invention provides a processing chamber for a semiconductor device, such as Figure 2 The process chamber of the vapor phase growth equipment shown in FIG. The temperature measurement system composed of the filter device 12, the photoelectric detection device 14, and the main control device 15 is arranged in Figure 2 The process chamber shown. Specifically, the filter device 12 is disposed on an optical window (not shown) located on the spray device 16. It receives thermal radiation from the process chamber through the spray holes 17 of the spray device 16 and the optical window, and emits light of a specific wavelength. After receiving the thermal radiation, the filter device allows light of a specific wavelength to pass through. Its selection depends on the wavelength range of the thermal radiation emitted by the temperature-measured structure. For example, in the Metal-Organic Chemical Vapor Deposition (MOCVD) process, the susceptor 19 supporting the substrate 18 is controlled to reach the reaction temperature, the reaction pressure in the process chamber is controlled, and a Group III metal organic compound gas and a Group V hydride gas are supplied to the substrate 18 via the spray device 16. The Group III metal organic compound gas and the Group V hydride gas decompose and react near the substrate surface, depositing on the substrate surface to form a semiconductor film. Semiconductor films of different compositions emit thermal radiation of different wavelengths at a given temperature. In some specific embodiments, a heater is provided under the base 19 to heat the base 19 , and the base 19 transfers heat to the substrate 18 so that the temperature of the substrate 18 reaches the reaction temperature requirement.

[0040] Photoelectric detection device 14 is electrically connected to filter device 12, receives light of a specific wavelength band, and converts the optical information of the specific wavelength band into electrical information, such as voltage information. Main control device 15 is electrically connected to photoelectric detection device 14, and calculates the test temperature based on a pre-stored voltage-temperature function and the received voltage information.

[0041] In the embodiment of the present invention, the temperature measurement system composed of the filter device 12, the photoelectric detection device 14 and the main control device 15 is a radiation temperature measurement system.

[0042] In some embodiments, the filter device 12 is a filter.

[0043] In some embodiments, the filter device 12 is composed of a lens and a filter. The thermal radiation emitted through the optical window of the process chamber is converged by the lens and then filtered to emit light of a specific wavelength band.

[0044] In some embodiments, the filter device 12 comprises a focusing portion and a filtering portion, which are connected by an optical fiber. The focusing portion includes a lens for concentrating thermal radiation emitted through the optical window of the process chamber. The filtering portion includes a filter that receives and filters the light beam emitted by the focusing portion before emitting light of a specific wavelength band.

[0045] In some embodiments, the filter device 12 further includes a focusing portion disposed on the light path of the filter portion or the filter, for focusing the light of a specific wavelength band emitted by the filter portion or the filter.

[0046] In some embodiments, the photodetection device 14 is a photodetector.

[0047] In some embodiments, the main control device 15 is a host computer.

[0048] In some embodiments, the optical filter is a bandpass filter having a bandwidth ranging from 50 to 200 nanometers.

[0049] In some embodiments, the operating wavelength range of the photodetection device is 200-1000 nanometers.

[0050] The bandwidth of the filter determines the spectral range of radiation that passes through, while the operating wavelength range of the photodetector determines the spectral range in which it can effectively respond. A good match between the spectral characteristics of the two ensures the accuracy of temperature measurement.

[0051] Since the main control device 15 pre-stores the voltage-temperature corresponding function , which contains the corresponding relationship between the effective wavelength and temperature of the filter device, and the corresponding relationship between the effective wavelength and temperature is applicable in a wide temperature range (for example Figure 7The temperature measurement method provided by the embodiment of the present invention is not only applicable to low-temperature temperature measurement (for example, below 700 degrees Celsius), but also to high-temperature temperature measurement (for example, above 700 degrees Celsius). It not only avoids the limitation of relying solely on the parameters provided by the filter device manufacturer, but also can be applied to a wider bandwidth range of the filter device, and forms a good spectral characteristic match with the photoelectric detection device.

[0052] like Figure 3 As shown, an embodiment of the present invention provides a temperature measurement method applied to a semiconductor device, comprising:

[0053] S0: providing a filter device, a photoelectric detection device, a main control device and a semiconductor device, wherein the main control device has a pre-stored voltage-temperature correspondence function;

[0054] S1: After controlling the temperature in the processing chamber of the semiconductor device according to the target temperature T, the filter device receives the thermal radiation from the processing chamber and emits light corresponding to a specific wavelength band;

[0055] S2: receiving the light of the specific wavelength band through the photoelectric detection device and converting the light information into voltage information;

[0056] S3: The main control device is configured to detect the voltage information and the voltage-temperature corresponding function. The measured temperature is obtained based on the size relationship between the target temperature T and the pre-stored reference temperature.

[0057] Specifically, the voltage-temperature function for:

[0058] ;

[0059] When the target temperature T does not exceed the reference temperature,

[0060] When the target temperature T exceeds the reference temperature, .

[0061] Among them: a, b are constants, The corresponding relationship between the effective wavelength and temperature is obtained by measuring and calculating the light intensity of the thermal radiation emitted by the standard heat source 11 at different set temperatures using a temperature measurement calibration system including the filter device 12; When the temperature of the standard heat source 11 is controlled to the upper limit temperature The effective wavelength value corresponding to the filter device 12 is obtained according to the corresponding relationship between the effective wavelength and the temperature.

[0062] The values of the constants a and b are obtained by the following process: Before executing step S1, execute the following steps:

[0063] S001: Provide a standard heat source 11, and the main control device 15 pre-stores an initial voltage-temperature corresponding function ;

[0064] S002: Controlling the standard heat source 11 to emit heat radiation at a set temperature;

[0065] S003: receiving the thermal radiation through the filter device 12 and emitting a corresponding single light beam;

[0066] S004: receiving the light information of the single light beam through the photoelectric detection device 14 and converting it into corresponding voltage information;

[0067] S005: Repeat S002 to S004 to make the standard heat source 11 emit corresponding heat radiation at different set temperatures, and the main control device 15 generates the corresponding voltage information at each set temperature and the initial voltage-temperature corresponding function. Get the a and b constants.

[0068] in, ; The set center wavelength value of the filter device.

[0069] In some specific embodiments, the set temperature of the standard heat source 11 is controlled to be T01 and reaches a temperature steady state stage. The filter device 12 receives the thermal radiation from the optical window of the standard heat source 11 and emits the corresponding specific wavelength light after filtering. The photoelectric detection device 14 receives the specific wavelength light and converts the optical information into the corresponding voltage information. The standard heat source 11 is controlled to heat up to another set temperature T02 and reach a temperature steady state stage. The filter device 12 receives the thermal radiation from the optical window of the standard heat source 11 and emits the corresponding specific band light after filtering. The photoelectric detection device 14 receives the specific band light and converts the optical information into the corresponding voltage information. 2. The main control device 15 is based on the voltage information and The formula calculates a and b, specifically:

[0070] ;

[0071]

[0072] In some embodiments, T01 and T02 are both no less than 1000 degrees Celsius. The radiation intensity of a blackbody thermal radiation signal varies at different wavelengths. For example, at 800 degrees Celsius, the thermal radiation intensity near a wavelength of 400 nm is nine orders of magnitude lower than that at 900 nm. Calibrating the a and b constants at high temperatures helps reduce or avoid systematic errors caused by processing weak thermal radiation signals.

[0073] In some embodiments, neither T01 nor T02 is lower than 1200 degrees Celsius.

[0074] The process of calculating the constant in the initial voltage-temperature function by using a temperature measurement calibration system composed of a standard heat source, a filter device, a photoelectric detection device and a main control device is based on the assumption that the set central wavelength value of the filter device is Under the premise of a fixed value, it is carried out within a limited standard heat source set temperature range (usually a high temperature range to ensure sufficient signal strength). Figure 1 As shown in the figure, there is a certain deviation between the actual center wavelength of the filter and its marked center wavelength, which is related to temperature. There are considerable limitations. Once the target temperature changes slightly, for example, it is lower than the standard heat source setting temperature, It is difficult to apply, and the temperature measurement is inaccurate.

[0075] For example, in Example 1, a MIKRON M390 blackbody furnace is used as the standard heat source. The filter device includes an Edmund #67-786 filter with a set center wavelength of 850 nm. The photodetector device is a Thorlabs PDF10A2 photodetector. The main control device is a programmable logic controller (PLC) that stores the initial voltage-temperature correspondence function. Specifically, the blackbody furnace is set to 1000 degrees Celsius and 1200 degrees Celsius respectively to execute the above steps S001 to S005, and the a and b constants are calibrated to 163621 and 14983 respectively, thereby determining The temperature of the black body furnace is controlled to be 400 degrees Celsius, 500 degrees Celsius, 600 degrees Celsius and 700 degrees Celsius respectively. The emitted thermal radiation is processed by the filter device and the photoelectric detection device to obtain the corresponding voltage information. The main control device is calibrated according to the a and b constants. The measured temperature is calculated from the corresponding voltage information, and the absolute value of the difference between the measured temperature and the corresponding set temperature is the deviation value. The variation trend between the deviation value and the measured temperature is as follows: Figure 8 As shown by the black dotted line, the deviation values are all above 2 degrees Celsius. Even if the blackbody furnace is set to a temperature above 700 degrees Celsius, the variation trend between the obtained deviation value and the measured temperature is as follows: Figure 9 As shown by the black dotted line, the deviation values between 700 and 900 degrees Celsius are all above 1 degree Celsius.

[0076] Precise temperature control is crucial for depositing semiconductor material layers on substrates using semiconductor processing equipment, such as MOCVD equipment. For example, when growing GaN layers on silicon substrates to form light-emitting diodes (LEDs), a temperature deviation of 1°C can cause the LED's center wavelength to deviate by more than 1nm from the desired wavelength in the process design. In severe cases, this can fundamentally alter the resulting LED's light output performance, for example, causing a red shift in the LED's center wavelength, making it impossible to produce the desired blue LED.

[0077] Therefore, it is necessary to Make corrections, that is, When a and b of the function remain unchanged, by modifying get , and then get .

[0078] In some embodiments, for , are the polynomial coefficients.

[0079] It is worth noting that when n takes different values, the coefficients of the corresponding polynomials Different. The maximum degree of the polynomial in this embodiment is 4. When the accuracy requirement is higher, the degree n of the polynomial can be an integer greater than 4. When the accuracy requirement is lower, the degree n of the polynomial can be an integer in [0, 3]. The accuracy requirement depends on the fluctuation of the substrate temperature value in the semiconductor device. If the accuracy requirement is too high, overfitting will easily occur, and if the accuracy requirement is too low, the accuracy of the substrate temperature value will decrease. The maximum degree of the polynomial that meets the working conditions is obtained through repeated iterations. The above-mentioned repeated iteration process can be carried out by trial and error and cross-validation to ensure that the new energy and temperature conversion function can not only meet the accuracy requirements, but also stably reflect the actual working conditions.

[0080] In some embodiments, n=4, .

[0081] like Figure 5 As shown, in some embodiments, before performing step S1, the following steps are performed:

[0082] S01: Provide standard heat source and light intensity detection device;

[0083] S02: measuring the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures by the light filtering device and the light intensity detection device;

[0084] S03: The main control device calculates according to the result of the light intensity measurement to obtain the corresponding effective wavelength value at each set temperature;

[0085] S04: The main control device calculates the corresponding effective wavelength value at each set temperature. The corresponding relationship between the effective wavelength and temperature of the filter device is obtained by fitting.

[0086] In some specific embodiments, the standard heat source 11 is a black body furnace.

[0087] In some specific embodiments, the light intensity detection device 13 is a spectrometer.

[0088] In some specific embodiments, the effective wavelength value at each set of calibration temperatures is The fitting method includes least squares fitting.

[0089] In some embodiments, the step of performing calculations by the main control device 15 based on the result of the light intensity measurement includes: obtaining the corresponding effective wavelength value at each set temperature by the main control device 15 based on the spectral response function and the blackbody radiation formula.

[0090] In some embodiments, a temperature measurement calibration system is provided such as Figure 4 As shown, it is used to execute S01-S04.

[0091] In some embodiments, the corresponding effective wavelength value at each set temperature is Obtained by the following formula:

[0092]

[0093] in, is the wavelength, is the spectral response function obtained by measuring the light intensity at the set temperature Ti, is the blackbody radiation formula.

[0094] Specifically, the blackbody radiation formula is:

[0095]

[0096] λ is the wavelength, T is the temperature, h is the Planck constant, c is the speed of light, k B is the Boltzmann constant.

[0097] In some examples, the spectral response function is shown in the following figure: Figure 6 As shown, the horizontal axis is the wavelength , the vertical axis is the relative intensity, specifically the spectral response characteristic intensity (Spectral Response Characteristic Intensity).

[0098] In some embodiments, the steps of measuring the light intensity of the thermal radiation emitted by the standard heat source 11 at different set temperatures through the filtering device 12 and the light intensity detection device 13 include: controlling the standard heat source 11 to emit each thermal radiation at different set temperatures not lower than 400 degrees Celsius; receiving each thermal radiation through the filtering device 12 and emitting corresponding single light beams; receiving through the light intensity detection device 13 and obtaining each spectral response function based on the light information of each single light beam.

[0099] In some embodiments, the step of controlling the standard heat source 11 to emit each heat radiation at different set temperatures not lower than 400 degrees Celsius includes: controlling the standard heat source 11 to emit each heat radiation after reaching the corresponding temperature steady state at different set temperatures of 400 to 2000 degrees Celsius.

[0100] In step S02 of some specific embodiments, the set temperature of the standard heat source is controlled to be T1, and the temperature reaches a steady state stage. The filter device receives the thermal radiation from the optical window of the standard heat source and filters it to emit a specific wavelength band of light. The light intensity detection device receives the specific wavelength band of light and measures the light intensity to obtain The main control device is based on and Get the effective wavelength value at the set temperature T1 . Control the set temperature of the standard heat source to T1, T2...Tmax respectively, and obtain the effective wavelength value corresponding to each set temperature to The steps are as described above.

[0101] Specifically, the corresponding effective wavelength value at each set temperature is satisfy:

[0102]

[0103] Specifically, the set temperatures are T1, T2…T max ; The blackbody radiation formula at the set temperature satisfies:

[0104]

[0105] In some specific embodiments, the number of groups of set temperatures is at least 4, including the first temperature set in chronological order. , second temperature , the third temperature and the fourth temperature , for example, satisfying: < < < , .

[0106] In some examples, the blackbody furnace of Example 1 is used, and a spectrometer of model QE65000 equipped with the filter device of Example 1 is used to control the blackbody furnace to emit thermal radiation at each set temperature. The corresponding effective wavelength at each set temperature is The corresponding relationship curve between the effective wavelength and temperature of the filter device 12 obtained by fitting is as follows: Figure 7 As shown, the horizontal axis is the set temperature and the vertical axis is the effective wavelength. Figure 7 satisfy ,in, is 960.60; -1.81×10 -2 ; 1.47×10 -5 ; -6.03×10 -9 ; 9.71×10 -3 . Figure 7 middle, It is 2000 degrees Celsius.

[0107] In the embodiment of the present invention, when the target temperature of the temperature control in the processing chamber of the high-temperature semiconductor device exceeds 700 degrees Celsius, middle, .

[0108] In Example 2, the black body furnace, filter device, photoelectric detection device and main control device set as PLC provided in Example 1 are used. The difference from Example 1 is that the PLC of Example 2 stores the voltage-temperature correspondence function. , In the equation, a and b constants are obtained through the aforementioned steps S001 to S005 and are 163621 and 14983 respectively; , specifically Figure 7 The corresponding relationship obtained by fitting is shown in the figure. The blackbody furnace is controlled to set the temperature from 700 degrees Celsius to each set temperature in steps. The difference between adjacent set temperatures is 100 degrees Celsius. The emitted thermal radiation is processed by the filter device and the photoelectric detection device to obtain the corresponding voltage information. The main control device is based on The measured temperature is calculated from the corresponding voltage information. The absolute value of the difference between the measured temperature and the corresponding set temperature is the deviation value. The variation trend between the deviation value and the measured temperature is as follows: Figure 9As shown by the red line, the deviation is very small and is controlled within 0.2 degrees Celsius.

[0109] In the embodiment of the present invention, when the target temperature of the temperature control in the processing chamber of the semiconductor device does not exceed 700 degrees Celsius, middle,

[0110] In embodiment 2, the difference from embodiment 1 is that the voltage-temperature correspondence function stored in the main control device is middle, , Specifically Figure 7 The corresponding relationship obtained by fitting is shown in the figure. When T is 2000 degrees Celsius, Figure 7 The corresponding relationship obtained by fitting is calculated as shown in The blackbody furnace is controlled to set the temperature from 400 degrees Celsius to each set temperature in steps. The difference between adjacent set temperatures is 100 degrees Celsius. The emitted thermal radiation is processed by the filter device and the photoelectric detection device to obtain the corresponding voltage information. The main control device is based on The measured temperature is calculated from the corresponding voltage information. The absolute value of the difference between the measured temperature and the corresponding set temperature is the deviation value. The variation trend between the deviation value and the measured temperature is as follows: Figure 8 As shown by the red line, the deviation is very small and is controlled within 0.2 degrees Celsius.

[0111] While the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations of these embodiments are possible. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the claims. Furthermore, the invention described herein is susceptible to other embodiments and may be practiced or implemented in a variety of ways.

Claims

1. A temperature measurement method applied to semiconductor equipment, characterized in that: include: S0: Provide a filter device, a photoelectric detection device, a main control device and a semiconductor device, wherein the main control device has a pre-stored voltage-temperature corresponding function ; S1: After controlling the temperature in the processing chamber of the semiconductor device according to the target temperature T, the filter device receives the thermal radiation from the processing chamber and emits light corresponding to a specific wavelength band; S2: receiving the light of the specific wavelength band through the photoelectric detection device and converting the light information into voltage information; S3: The main control device is configured to detect the voltage information and the voltage-temperature corresponding function. and the measured temperature is obtained based on the magnitude relationship between the target temperature T and the pre-stored reference temperature; The voltage-temperature correspondence function for: When the target temperature T does not exceed the reference temperature, When the target temperature T exceeds the reference temperature, ; a, b are constants, and the reference temperature is 700-900 degrees Celsius; The temperature measurement and calibration system including the filter device is used to measure and calculate the intensity of the thermal radiation emitted by the standard heat source at different set temperatures, and the corresponding relationship between the effective wavelength of the filter device and the temperature is obtained. When the temperature control of the standard heat source is the upper limit temperature The corresponding effective wavelength value is calculated based on the corresponding relationship between the effective wavelength of the filter device and the temperature.

2. The temperature measurement method according to claim 1, characterized in that: for ; are polynomial coefficients, and n is a positive integer greater than or equal to 1.

3. The temperature measurement method according to claim 1, characterized in that: The optical filtering device comprises a bandpass filter, and the bandwidth of the bandpass filter ranges from 50 to 200 nanometers.

4. The temperature measurement method according to claim 1, characterized in that: Before executing the S1 step, perform the following steps: S01: Provide standard heat source and light intensity detection device; S02: measuring the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures by the light filtering device and the light intensity detection device; S03: The main control device calculates the corresponding effective wavelength value at each set temperature based on the result of the light intensity measurement ; S04: The main control device calculates the corresponding effective wavelength value at each set temperature. The corresponding relationship between the effective wavelength and temperature of the filter device is obtained by fitting .

5. The temperature measurement method according to claim 4, characterized in that: The corresponding effective wavelength value at each set temperature Obtained by the following formula: in, is the wavelength, is the corresponding spectral response function obtained by measuring the light intensity of the emitted thermal radiation at each set temperature, is the blackbody radiation formula.

6. The temperature measurement method according to claim 4, characterized in that: The steps of measuring the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures by the light filtering device and the light intensity detection device include: Controlling the standard heat source to emit heat radiation at different set temperatures not lower than 400 degrees Celsius; Receiving each of the thermal radiations through the filter device and emitting corresponding single light beams; The light intensity detection device receives and obtains each spectral response function based on the light information of each single light beam.

7. The temperature measurement method according to claim 6, characterized in that: In step S03, the step of performing calculation by the main control device according to the result of the light intensity measurement includes: The main control device calculates the corresponding effective wavelength value at each set temperature according to the spectral response function and the blackbody radiation formula .

8. The temperature measurement method according to claim 6, characterized in that: The steps of controlling the standard heat source to emit heat radiation at different set temperatures not lower than 400 degrees Celsius include: The standard heat source is controlled to reach a corresponding temperature steady state at different set temperatures of 400 to 2000 degrees Celsius and then emit each of the thermal radiations.

9. The temperature measurement method according to claim 1, characterized in that: Before executing step S1, perform the following steps: Provide a standard heat source, the main control device pre-stores the initial voltage-temperature corresponding function ; Controlling the standard heat source to emit heat radiation at different set temperatures; Receiving each of the thermal radiations through the filter device and emitting corresponding single light beams; The photoelectric detection device receives the light information of each single light beam and converts it into corresponding voltage information; The main control device is configured to determine the corresponding voltage information at each set temperature and the initial voltage-temperature corresponding function Get the a and b constants; ； in, The set center wavelength value of the filter device.

10. The temperature measurement method according to claim 1, characterized in that: The operating wavelength range of the photoelectric detection device is 200-1000 nanometers.

11. A temperature measurement system, characterized in that: include: A filter device for receiving thermal radiation from a processing chamber of a semiconductor device and emitting light corresponding to a specific wavelength band; a photoelectric detection device, arranged on the light output path of the filter device or connected to the filter device to realize optical communication, and used for receiving and converting the optical information of the light in the specific wavelength band into voltage information; The main control device is connected to the photoelectric detection device and pre-stores the reference temperature and the voltage-temperature corresponding function. , for determining the voltage-temperature correspondence function based on the relationship between the reference temperature and the target temperature controlled in the processing chamber, the voltage information, and the voltage-temperature correspondence function Get the measured temperature; ； When the target temperature T does not exceed the reference temperature, When the target temperature T exceeds the reference temperature, ; a, b are constants, and the reference temperature is 700-900 degrees Celsius; The temperature measurement and calibration system including the filter device is used to measure and calculate the intensity of the thermal radiation emitted by the standard heat source at different set temperatures, and the corresponding relationship between the effective wavelength of the filter device and the temperature is obtained. When the temperature control of the standard heat source is the upper limit temperature The corresponding effective wavelength value is calculated based on the corresponding relationship between the effective wavelength of the filter device and the temperature.

12. The temperature measurement system according to claim 11, characterized in that: for ; are polynomial coefficients, and n is a positive integer greater than or equal to 1.

13. The temperature measurement system according to claim 11, characterized in that: The optical filtering device comprises a bandpass filter, and the bandwidth of the bandpass filter ranges from 50 to 200 nanometers.

14. The temperature measurement system according to claim 11, characterized in that: The operating wavelength range of the photoelectric detection device is 200-1000 nanometers.

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