Temperature calibration method for temperature measurement of low-temperature semiconductor equipment and temperature measurement system and method

Abstract

The invention provides a temperature calibration method and a temperature measurement system and method for temperature measurement of low-temperature semiconductor equipment, a light intensity measurement system and a photoelectric measurement system of the temperature calibration method comprise the same light filtering device, and voltage response functions related to wavelength variation parameters and luminous flux parameters are prestored in the light intensity measurement system and the photoelectric measurement system; light intensity measurement and calculation processing are carried out on the standard heat source through the light intensity measurement system to obtain a reference center wavelength of the light filtering device, then the standard heat source is controlled to be heated step by step, and fitting calculation is carried out through the photoelectric measurement system to obtain a wavelength variation parameter and a luminous flux parameter. A corrected central wavelength is obtained according to the reference central wavelength and the wavelength variation parameter, and a new voltage response function # imgabs0 # is obtained according to the luminous flux parameter, the wavelength variation parameter and the corrected central wavelength, so that the problem of inaccurate temperature measurement caused by low thermal radiation intensity in low-temperature measurement and inevitable processing precision of the optical filter is reduced or avoided.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor measurement and control, and particularly to a temperature calibration method, a temperature measurement system and a method for measuring the temperature of a low-temperature semiconductor device. Background Art

[0002] In the prior art, during the process of using an optical method to perform thermal radiation measurement on the processing chamber of a high-temperature semiconductor device for temperature monitoring, a filter is used to perform band-pass control on the collected thermal radiation to emit light in a specific wavelength band. A photodetector and a host computer are used to convert the optical information of the light in the specific wavelength band into post-information related to radiation energy, and the corresponding measured temperature is calculated using Planck's blackbody radiation formula.

[0003] Planck's blackbody radiation formula is related to wavelength and temperature. In the prior art, Planck's blackbody radiation formula is used to calculate the corresponding measured temperature, and the specified wavelength is the central wavelength of the filter. The lower the temperature to be measured, the lower the thermal radiation intensity in the processing chamber, which is not conducive to subsequent signal acquisition and processing. Moreover, due to processing accuracy reasons, the filter will inevitably affect the temperature measurement accuracy. Please refer to Figure 1 , taking a filter with a passband range of 800 - 900 nanometers as Comparative Example 1, when controlling the temperature of a blackbody furnace as a standard heat source to be 400 degrees Celsius, after the thermal radiation of the blackbody furnace is filtered by this filter and then tested by a spectrometer, the light intensity shows a significant change trend with the passband range, which will introduce a more significant systematic error in the temperature measurement process compared to high-temperature measurement, thus significantly affecting the accuracy of temperature measurement data. Therefore, there is an urgent need for a temperature measurement method and a temperature measurement system for low-temperature semiconductor devices to improve the above problems.

[0004] Therefore, there is an urgent need for a temperature calibration method, a temperature measurement system and a method for measuring the temperature of a low-temperature semiconductor device to improve the above problems. Summary of the Invention

[0005] The purpose of the present invention is to provide a temperature calibration method, a temperature measurement system and a method for measuring the temperature of a low-temperature semiconductor device, so as to reduce or avoid the problem of inaccurate temperature measurement caused by low thermal radiation intensity during low-temperature measurement and inevitable processing accuracy reasons of the filter.

[0006] In a first aspect, the present invention provides a temperature calibration method for measuring the temperature of a low-temperature semiconductor device, including: S0: providing a standard heat source, a light intensity measurement system and a photoelectric measurement system, the light intensity measurement system and the photoelectric measurement system include the same filter device, and both pre-store a voltage response function , where is the wavelength, T is the temperature, F is the light flux parameter, is the parameter of wavelength change amount; S1: Obtain the thermal radiation respectively emitted by the standard heat source at different set temperatures not exceeding 700 °C through the light intensity measurement system, perform light intensity measurement and calculation processing, and obtain the reference center wavelength of the filter device value; S2: Control the standard heat source to stepwise increase the temperature to different test set temperatures not exceeding 700 °C, obtain through the optoelectronic measurement system and according to the test voltage information of the test thermal radiation respectively emitted at each test set temperature, the reference center wavelength and the voltage response function perform fitting calculation to obtain the F value and ; S3: Obtain the new voltage response function E(T) according to the F value, the reference center wavelength and the .

[0007] Optionally, in step S2, the is value, in step S3, according to the reference center wavelength value and the value, the corrected center wavelength obtained by the sum is value, and the new voltage response function E(T) is .

[0008] Optionally, after step S3 is executed, the following value correction step is executed: Control the standard heat source to stepwise increase the temperature to different re-test set temperatures not exceeding 700 °C, obtain through the optoelectronic measurement system and according to the re-test voltage information of the re-test thermal radiation respectively emitted at each re-test set temperature and the voltage response function E perform fitting calculation to obtain the value in different re-test set temperature ranges, and the new voltage response function E(T); wherein, T is the temperature, is the fine correction amount of the center wavelength, the temperature difference between adjacent re-test set temperatures is less than the temperature difference between adjacent test set temperatures, and each re-test set temperature range includes at least three re-test set temperatures.

[0009] Optionally, in the value correction step: the new voltage response function E(T) is , wherein, the values of F, and C 2 are obtained through step S2.

[0010] Optionally, the optoelectronic measurement system includes an optoelectronic detection device, and the light intensity measurement system further stores the wavelength response characteristic information of the optoelectronic detection device. In step S1, the steps of obtaining the thermal radiation emitted by the standard heat source at different set temperatures not exceeding 700 °C through the light intensity measurement system, performing light intensity measurement and calculation processing include: Obtaining, through the light intensity measurement system, the spectral response information corresponding to the thermal radiation emitted by the standard heat source at each of the set temperatures, and calculating the reference center wavelength of the filter device based on the wavelength response characteristic information and each of the spectral response information .

[0011] Optionally, the wavelength response characteristic information of the optoelectronic detection device includes the wavelength response function of the optoelectronic detection device , and the spectral response information corresponding to the thermal radiation emitted at each of the set temperatures includes the spectral response function corresponding to each of the thermal radiations , and the steps of obtaining the reference center wavelength of the filter device based on the wavelength response characteristic information and each of the spectral response information include: Based on the wavelength response function and each of the spectral response functions obtaining the reference wavelength at each of the set temperatures , and then obtaining the reference center wavelength based on the average value of each of the reference wavelengths . .

[0012] Optionally, the light intensity measurement system further stores the response wavelength range of the optoelectronic detection device ~ , and the reference wavelength at each of the set temperatures satisfies: ; where dλ is a small increment of wavelength λ.

[0013] Optionally, in step S0, the light intensity measurement system includes a filter device, a light intensity detection device, and a main control device, the optoelectronic measurement system includes the filter device, an optoelectronic detection device, and the main control device, and the main control device stores the initial voltage response function ; The thermal radiations, the test thermal radiations, and the re-test thermal radiations are respectively obtained through the filter device and a single beam of a specific band is emitted; the light intensity detection device respectively receives and measures the light intensity of the single beam of the specific band corresponding to each of the thermal radiations to obtain corresponding spectral response information; the photoelectric detection device respectively receives and performs photoelectric conversion into corresponding voltage information according to the optical information of the single beam of the specific band corresponding to each of the test thermal radiations and the re-test thermal radiations; the main control device respectively receives and performs corresponding fitting calculations according to each of the voltage information and the initial voltage response function for corresponding fitting calculations.

[0014] Optionally, the main control device also pre-stores wavelength response characteristic information of the photoelectric detection device, and calculates the reference center wavelength of the filter device according to the wavelength response characteristic information and each of the spectral response information .

[0015] Optionally, the voltage response function (T,F,δ) satisfies: .

[0016] Optionally, the temperature difference between adjacent re-test set temperatures does not exceed 50 degrees Celsius, and the range of each re-test set temperature does not exceed 100 degrees Celsius.

[0017] Optionally, the temperature difference between adjacent test set temperatures is not less than 100 degrees Celsius, and at least one re-test set temperature is included in the temperature range between adjacent test set temperatures.

[0018] Optionally, the filter device includes a long-pass filter, and the photoelectric measurement system further includes a photoelectric detection device, so that the combination of the photoelectric detection device and the long-pass filter also functions as a band-pass filter.

[0019] Optionally, the working wavelength range of the photoelectric detection device is 200 to 1000 nanometers, and the combination of the photoelectric detection device and the long-pass filter also functions as a band-pass filter with a bandwidth of not less than 50 nanometers.

[0020] In a second aspect, the present invention provides a temperature measurement system, including: a filter device for receiving thermal radiation emitted from the low-temperature semiconductor device and emitting a single beam of a specific band; a photoelectric detection device disposed on the light-emitting optical path of the filter device or connected to the filter device to achieve optical communication, for receiving and converting the optical information of the single beam of the specific band into corresponding voltage information; a main control device communicatively connected to the photoelectric detection device, and pre-storing a new voltage response function E(T) obtained by the temperature calibration method according to any one of the first aspect.

[0021] In a third aspect, the present invention provides a temperature measurement method, including: providing a cryogenic semiconductor device and the temperature measurement system described in the second aspect; controlling the set temperature in the cryogenic semiconductor device not to be higher than 700 degrees Celsius; receiving, through a filtering device of the temperature measurement system, the thermal radiation emitted from the cryogenic semiconductor device and emitting a single beam of a specific wavelength band; receiving, through a photoelectric detection device of the temperature measurement system, and converting the optical information of the single beam of the specific wavelength band into voltage information; obtaining, through a main control device of the temperature measurement system, a corresponding measured temperature according to the voltage information and the new voltage response function E(T).

[0022] Compared with the prior art, the beneficial effects of the temperature calibration method, the temperature measurement system, and the temperature measurement method of the present invention are all as follows: Since the thermal radiation energy emitted from the cryogenic semiconductor device is low, the optical flux parameter F and the wavelength change parameter will significantly affect the temperature measurement of the cryogenic semiconductor device. The light intensity measurement system and the photoelectric measurement system of the present invention include the same filtering device, and both pre-store the voltage response function related to F and . According to step S1, the thermal radiation emitted by the standard heat source at different set temperatures not exceeding 700 degrees Celsius is obtained through the light intensity measurement system, and the light intensity measurement and calculation processing are performed to obtain the reference center wavelength of the filtering device. Then, according to step S2, the standard heat source is controlled to be heated step by step to different test set temperatures not exceeding 700 degrees Celsius, and the test voltage information, the reference center wavelength of the test thermal radiation emitted at each test set temperature, and the voltage response function are obtained through the photoelectric measurement system and are used for fitting calculation to obtain the F value and . According to step S3, the corrected center wavelength is obtained according to the reference center wavelength and . The new voltage response function is obtained according to the F value, and the corrected center wavelength . By realizing the correction of the center wavelength of the filtering device during the calibration of F and , it is possible to reduce or avoid the problem of inaccurate temperature measurement caused by the low intensity of the thermal radiation measured at low temperatures and the inevitable inaccuracy of the filtering film due to processing accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 Schematic diagram of the emitted light intensity and wavelength of the standard heat source in Comparative Example 1 at different heating temperatures; Figure 2Schematic assembly diagram of the standard heat source, light filtering device, photoelectric detection device, light intensity detection device, and main control device provided by the embodiments of the present invention; Figure 3 Schematic structural diagram of the temperature measurement and calibration system provided by the embodiments of the present invention; Figure 4 Flowchart of a temperature calibration method applied to a low-temperature semiconductor device provided by the embodiments of the present invention; Figure 5 Graph of Q(λ) of the photodetector, S(λ) of the filter, and response curve E0(λ) of the photodetector to the received single beam provided by the present invention; Figure 6 Correspondence diagram of the corresponding test voltage information at different test set temperatures obtained in step S2 of the embodiments of the present invention; Figure 7 For the embodiments of the present invention In the value correction step, correspondence diagram of the retest voltage information corresponding to each retest set temperature within the first retest set temperature range; Figure 8 For the embodiments of the present invention In the value correction step, correspondence diagram of the retest voltage information corresponding to each retest set temperature within the second retest set temperature range. Detailed implementation manners

[0024] To make the objectives, technical solutions, and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the present invention. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meanings understood by those of ordinary skill in the art to which the present invention pertains. The terms "including" and the like used herein are intended to mean that the elements or items appearing before the term cover the elements or items listed after the term and their equivalents, without excluding other elements or items.

[0025] In the present invention, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance. The term "plurality" means two or more, unless otherwise clearly defined.

[0026] The present invention provides a processing chamber for a low-temperature semiconductor device, such as Figure 2 the process chamber of the vapor deposition device shown. A temperature measurement system composed of a light filtering device 12, a photoelectric detection device 14, and a main control device 15 is provided inFigure 2 The process chamber shown. Specifically, the filter device 12 is disposed on the optical window (not shown in the figure) provided on the spraying device 16 to receive the thermal radiation in the process chamber through the spraying holes 17 of the spraying device 16 and the optical window, and emit light in a specific wavelength band. After receiving the thermal radiation, the filter device allows light in a specific wavelength band to pass through, and its selection is based on the range of the wavelength band of the thermal radiation emitted by the temperature-measuring structure. For example, taking the Metal-Organic Chemical Vapor Deposition (MOCVD) process as an example, the susceptor 19 carrying the substrate 18 is controlled to reach the reaction temperature, the reaction pressure in the process chamber is controlled, and group III metal-organic compound gas and group V hydride gas are supplied to the substrate 18 through the spraying device 16. The group III metal-organic compound gas and the group V hydride gas decompose and react near the upper part of the substrate and deposit on the surface of the substrate to form a semiconductor film. Semiconductor films with different compositions emit thermal radiation in different wavelength bands at a certain temperature. In some specific embodiments, a heater is disposed below the susceptor 19 to heat the susceptor 19, and the temperature of the substrate 18 reaches the reaction temperature requirement through the heat transfer from the susceptor 19 to the substrate 18.

[0027] The photoelectric detection device 14 is electrically connected to the filter device 12, receives the light in a specific wavelength band, and converts the optical information of the light in the specific wavelength band into electrical information, such as voltage information. The main control device 15 is electrically connected to the photoelectric detection device 14, and calculates the measured temperature according to the pre-stored voltage-temperature corresponding function and the received voltage information.

[0028] In the embodiment of the present invention, the photoelectric measurement system composed of the filter device 12, the photoelectric detection device 14, and the main control device 15 is a radiation temperature measurement system.

[0029] In some embodiments, the filter device 12 is a filter.

[0030] In some embodiments, the filter device 12 is composed of a lens and a filter. The thermal radiation emitted through the optical window of the process chamber is converged by the lens and then acted on by the filter to emit light in a specific wavelength band.

[0031] In some embodiments, the filter device 12 includes a light condensing part and a filtering part, which are connected by an optical fiber. The light condensing part includes a lens for converging the thermal radiation emitted through the optical window of the process chamber. The filtering part includes a filter for receiving the light beam emitted by the light condensing part and filtering it to emit light in a specific wavelength band.

[0032] In some embodiments, the filter device 12 further includes a light condensing part disposed on the light path of the light emitted by the filtering part or the filter for converging the light in a specific wavelength band emitted by the filtering part or the filter.

[0033] In some embodiments, the photoelectric detection device 14 is a photodetector.

[0034] In some embodiments, the main control device 15 is a host computer.

[0035] At low-temperature temperature measurement, the intensity of thermal radiation is relatively weak. If a band-pass filter is used, when the bandwidth of the band-pass filter is too wide, it is easy to introduce more noise and exacerbate the adverse effect on the temperature measurement accuracy; when the bandwidth is too narrow, it is easy to lose thermal radiation information, which will also exacerbate the adverse effect on the temperature measurement accuracy. Considering that for the temperature measurement of low-temperature semiconductor devices, the selection of the band-pass filter is greatly restricted and it is not easy to match a suitable band-pass filter. In some embodiments of the present invention, the filter is a long-wave pass filter. By using the combination of the long-wave pass filter and the photoelectric detection device, the photoelectric detection device can not only receive the light of a specific wavelength band emitted by the long-wave pass filter and measure its voltage information, but also play the role of a band-pass filter. For example, after the thermal radiation emitted by the standard heat source at 600 degrees Celsius passes through the filter, its response curve S(λ) is as Figure 5 shown, indicating that the filter is a long-wave pass filter. The response curve of the photoelectric detection device to the light emitted by the filter is as Figure 5 shown by E0(λ), presenting a square wave with a certain bandwidth.

[0036] In some embodiments, the combination of the photoelectric detection device and the long-wave pass filter also plays the role of a band-pass filter with a bandwidth of not less than 50 nanometers.

[0037] In some embodiments, the working wavelength range of the photoelectric detection device is 200 to 1000 nanometers.

[0038] The bandwidth of the filter determines the spectral range through which the radiation passes, while the working wavelength range of the photoelectric detection device determines the spectral range in which it can effectively respond. A good match between the spectral characteristics of the two can ensure the accuracy of temperature measurement.

[0039] Regarding the problems existing in the prior art, as Figure 4 shown, the first embodiment provides a temperature calibration method for a low-temperature semiconductor device, including: S0: Provide a standard heat source, a light intensity measurement system, and a photoelectric measurement system. The light intensity measurement system and the photoelectric measurement system include the same filtering device and both pre-store a voltage response function , where is the temperature, is the luminous flux parameter, is the wavelength change parameter; S1: Obtain the thermal radiation emitted by the standard heat source at different set temperatures not exceeding 700 degrees Celsius through the light intensity measurement system, perform light intensity measurement and calculation processing, and obtain the reference center wavelength of the filtering device Value; S2: Control the standard heat source to stepwise increase the temperature to different test set temperatures not exceeding 700 degrees Celsius, obtain through the optoelectronic measurement system and based on the test voltage information of the test thermal radiation respectively emitted at each test set temperature, the reference center wavelength and the voltage response function to perform fitting calculations to obtain value and ; S3: Based on the reference center wavelength and the to obtain the corrected center wavelength , based on the F value and the corrected center wavelength to obtain the new voltage response function .

[0040] In step S2 of some embodiments, the is value. In step S3, based on the reference center wavelength value and the sum of the value, the corrected center wavelength is value.

[0041] In step S2 of some embodiments, the voltage response function used satisfies formula 1: .

[0042] In some examples, in the test set temperature range T 1 -T n , the test voltage information at each temperature obtained in step S2 is known information, which are respectively , and the F value, value and C 2 value can be solved through the following system of equations:

[0043] In some embodiments, in step S3, based on the reference center wavelength value and the sum of the value, the corrected center wavelength is value, and the new voltage response function E(T) is .

[0044] In some embodiments, when the temperature measurement range of the cryogenic semiconductor device is relatively wide, considering that the change in temperature will cause the shift of the thermal radiation wavelength, as the temperature increases, the wavelength shifts towards the long-wave direction, and as the temperature decreases, the wavelength shifts towards the short-wave direction. During the temperature measurement process, even when the temperature in the standard heat source (such as a blackbody furnace) reaches a steady state of temperature balance, its temperature still fluctuates to a certain extent, and the lower the temperature, the more serious this fluctuation is. Therefore, this wavelength change can be used as a consideration factor in the correction formula, and within each narrow temperature range, respectively is corrected to make the temperature measurement more accurate. Therefore, after the step S2 is completed, the following value correction step is executed, and then the step S3 is executed. The value correction step includes: controlling the standard heat source to stepwise increase the temperature to different retest set temperatures not exceeding 700 degrees Celsius, obtaining through the optoelectronic measurement system and according to the retest voltage information of the retest thermal radiation respectively emitted at each of the retest set temperatures and the voltage response function E performing fitting calculations to obtain values in different retest set temperature ranges; according to the values are respectively added to each of the values to obtain each new value, and the corresponding new values in the different retest set temperature ranges as the wavelength change amount parameter - temperature range correspondence; where T is the temperature, is the fine correction amount of the central wavelength, the temperature difference between adjacent retest set temperatures is less than the temperature difference between adjacent test set temperatures, and each retest set temperature range includes at least three of the retest set temperatures.

[0045] In some embodiments, is .

[0046] In some embodiments, the new voltage response function E(T) obtained after the value correction step is , where the values of F, and are obtained through step S2.

[0047] In some other examples, taking a retest set temperature range - as an example, the test voltage information at each temperature obtained in the value correction step, such as E11, E12,..., E1n, are all known information, is the unknown, takes the value of value, and the corresponding value within the retest set temperature range can be calculated through the following system of equations value, that is to the average value of the sum.

[0048]

[0049] wherein, F and C 2 are the values calculated in step S2.

[0050] In some embodiments, the temperature difference between adjacent test set temperatures is not less than 100 degrees Celsius, and at least 1 retest set temperature is included within the temperature range between each adjacent test set temperature.

[0051] In some embodiments, the temperature difference between adjacent retest set temperatures does not exceed 50 degrees Celsius, and each retest set temperature range does not exceed 100 degrees Celsius.

[0052] In some embodiments, the main control device pre-stores the wavelength response function of the photoelectric detection device , and the steps of receiving and processing the information of each thermal radiation by the system composed of the filter device, the light intensity detection device, and the main control device include: receiving each thermal radiation through the filter device and emitting a single beam of a corresponding specific wavelength band; measuring the intensity of each single beam through the light intensity detection device to obtain corresponding spectral response functions ; the main control device obtains the reference center wavelength according to the wavelength response function and each spectral response function .

[0053] The wavelength response function Q(λ) is used to characterize the response sensitivity of the photoelectric detection device to the intensity of light of different wavelengths, such as Figure 5 Q(λ).

[0054] In some embodiments, the main control device pre-stores the response wavelength range of the photoelectric detection device ~ , and the steps of the main control device obtaining the reference center wavelength according to the wavelength response function and each spectral response function include: the main control device obtains the reference wavelength at each set temperature according to the wavelength response function and each spectral response function , and then obtains the reference center wavelength according to the average value of each reference wavelength ​ .

[0055] In some embodiments, the reference wavelengths at each of the set temperatures satisfy: ; where dλ is a small increment of wavelength λ.

[0056] In some examples, the index variable i is a non - negative integer. When i takes i1, i2, …, im, the test set temperatures are 、 、…、 , and the reference wavelengths satisfy:

[0057] In some examples, the light intensity measurement system includes a filter device, a light intensity detection device, and a main control device. The optoelectronic measurement system includes the filter device, an optoelectronic detection device, and the main control device. The main control device pre - stores the initial voltage response function . The filter device is used to respectively obtain each of the thermal radiations, each of the test thermal radiations, and each of the re - test thermal radiations and emit single beams corresponding to specific bands; The light intensity detection device is used to respectively receive and measure the light intensity of the single beams corresponding to specific bands of each of the thermal radiations to obtain corresponding spectral response information; The optoelectronic detection device is used to respectively receive and, according to the optical information of the single beams corresponding to each of the test thermal radiations and each of the re - test thermal radiations, perform optoelectronic conversion to corresponding voltage information; The main control device respectively receives and, according to each of the voltage information and the initial voltage response function performs corresponding fitting calculations.

[0058] In some examples, the main control device also pre - stores the wavelength response characteristic information of the optoelectronic detection device to calculate the reference center wavelength of the filter device according to the wavelength response characteristic information and each of the spectral response information .

[0059] In some examples, the step of obtaining corresponding test voltage information by the system composed of the filter device and the optoelectronic detection device according to the information of each of the test thermal radiations includes: the filter device respectively receives each of the test thermal radiations and emits test single beams corresponding to specific bands; the optoelectronic detection device receives and performs optoelectronic conversion according to each of the test single beams to obtain corresponding test voltage information.

[0060] In some examples, the step of obtaining the corresponding retest voltage information according to each of the received retest thermal radiation information by the system composed of the filter device and the photoelectric detection device includes: receiving each of the retest thermal radiation through the filter device and emitting a corresponding retest single beam of a specific band; receiving by the photoelectric detection device and performing photoelectric conversion according to each of the retest single beams to obtain the corresponding retest voltage information.

[0061] As Figure 3 shown, the second embodiment provides a temperature measurement system, including: a filter device for receiving the thermal radiation emitted from the low-temperature semiconductor device and emitting a single beam of a specific band; a photoelectric detection device disposed on the light-emitting optical path of the filter device or connected to the filter device to achieve optical communication, for receiving and converting the optical information of the single beam of the specific band into corresponding voltage information; a main control device communicatively connected to the photoelectric detection device, and pre-storing a new voltage response function E(T) obtained by a temperature calibration method.

[0062] The third embodiment provides a temperature measurement method, including: controlling the set temperature in the low-temperature semiconductor device not to be higher than 700 degrees Celsius; receiving the thermal radiation emitted from the low-temperature semiconductor device through the filter device of the temperature measurement system and emitting a single beam of a specific band; receiving by the photoelectric detection device of the temperature measurement system and converting the optical information of the single beam of the specific band into voltage information; obtaining the corresponding measured temperature according to the voltage information and the new voltage response function E(T) by the main control device of the temperature measurement system.

[0063] In the specific embodiment 1, a blackbody furnace of the MIKRON M390 model is used as the standard heat source, the filter device is a long-pass filter with a set central wavelength greater than 1200 nm, the photoelectric detection device is a photodetector of the Thorlabs PDF10A2 model, and its Q(λ) is as Figure 5 shown, and the main control device is a PLC, which stores .

[0064] Specifically, using a spectrometer of the QE65000 model provided with the filter device of Embodiment 1, controlling the set temperature of the blackbody furnace to be 500 degrees Celsius, 600 degrees Celsius, and 700 degrees Celsius respectively to perform light intensity measurement and calculation processing, and obtaining to be 1462 nm. For example, the S(λ) of the spectrometer at 600 degrees Celsius is as Figure 4 shown.

[0065] With this calibrated and Calculate the first measured temperature at each retest set temperature shown in Table 1. The absolute value of the difference between each first measured temperature and the corresponding set temperature is the first deviation value. See Table 1 for details. As can be seen from Table 1, the vast majority of the first deviation values are above 1 degree Celsius. The lower the set temperature, the more significant the temperature deviation, and it can even deviate by 2 degrees Celsius or more. C and C 2 are 1.867×10 6 and 1.44×10 7 respectively.

[0066] For depositing a semiconductor material layer on a substrate surface using a semiconductor processing device, such as a MOCVD device, precise temperature control is very important. For example, when growing a GaN layer on a silicon substrate to fabricate a light-emitting diode (LED), if the temperature deviates by 1 degree Celsius, the central wavelength of the LED will deviate from the central wavelength required by the process design by more than 1 nm. In severe cases, it will cause a fundamental change in the light-emitting performance of the fabricated LED. For example, a red shift in the central wavelength of the LED will prevent the originally desired blue LED from being obtained.

[0067] In the specific Example 2, after performing the same steps as in Example 1 to obtain , step S2 is executed. At test set temperatures of 500 degrees Celsius, 600 degrees Celsius, and 700 degrees Celsius respectively, using and , it is calibrated that F is 1.6×10 19 , is -39.62, is 1.44043×10 7 , (see the relationship between the specific test set temperatures and the corresponding voltage information in Figure 6 ). The set temperature of the blackbody furnace is controlled to be the retest set temperature in Table 1 respectively. The emitted thermal radiation is processed by a filter device and a photoelectric detection device to obtain the corresponding voltage information. The main control device calculates the calibrated E and the corresponding voltage information to obtain that the in the first retest set temperature range (500 degrees Celsius to 600 degrees Celsius) is -0.50, and the in the second retest set temperature range (600 to 700 degrees Celsius) is -0.44. Figure 7 and Figure 8 respectively show the voltage information corresponding to the sampling temperature points in each retest set temperature range, and the theoretical voltage-temperature curve relationship fitted according to these sampling temperature points. After the above calibration, using is 1462 nm, is -39.62 and each of the retest set temperature ranges The effective center wavelength at the first retest set temperature range is calculated The value (1462 - 39.62 - 0.50) is approximately 1462 nm, and the effective center wavelength at the second retest set temperature range The value (1462 - 39.62 - 0.44) is also approximately 1462 nm. Using F as 1.6×10 19 , C 2 is 1.44043×10 7 , and the second measured temperature at each retest set temperature is calculated using the above effective center wavelength and the new E(T) formula. See Table 1 for details. The absolute value of the difference between the second measured temperature and the corresponding set temperature is the second deviation value. As can be seen from Table 1, the second deviation value is significantly smaller than the first deviation value and is controlled within 1 degree Celsius.

[0068] Table 1

[0069] Although the embodiments of the present invention have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are all within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein can have other embodiments and can be implemented or realized in various ways.

Claims

1. A temperature calibration method for measuring temperature of low-temperature semiconductor equipment, characterized in that: include: S0: Provide a standard heat source, a light intensity measurement system and a photoelectric measurement system, wherein the light intensity measurement system and the photoelectric measurement system include the same filter device and both have a pre-stored voltage response function. , where T is the temperature, F is the luminous flux parameter, is the wavelength variation parameter; S1: Obtain the thermal radiation emitted by the standard heat source at different set temperatures not exceeding 700 degrees Celsius through the light intensity measurement system and perform light intensity measurement and calculation processing to obtain the reference central wavelength of the filter device value; S2: Control the standard heat source to heat up in steps to different test set temperatures not exceeding 700 degrees Celsius, and obtain the test voltage information of the test thermal radiation emitted at each test set temperature and the reference center wavelength through the photoelectric measurement system. and the voltage response function The F value and ; S3: According to the F value, the reference center wavelength and stated Get the new voltage response function E(T).

2. The temperature calibration method according to claim 1, characterized in that: In the step S2, the for value, in the step S3, according to the reference central wavelength Value and The corrected central wavelength is obtained by summing the values , the new voltage response function E(T) is .

3. The temperature calibration method according to claim 1, characterized in that: After step S3 is completed, the following steps are performed: Value correction steps: Control the standard heat source to heat up in steps to different retest set temperatures not exceeding 700 degrees Celsius, and obtain the retest voltage information and voltage response function of the retest heat radiation emitted respectively at each retest set temperature through the photoelectric measurement system. The fitting calculation is performed to obtain the different retest set temperature ranges. value, and the new voltage response function E(T); Where T is the temperature, is a fine correction amount of the central wavelength, the temperature difference between adjacent retest set temperatures is smaller than the temperature difference between adjacent test set temperatures, and each retest set temperature range includes at least three retest set temperatures.

4. The temperature calibration method according to claim 3, characterized in that: Said In the value correction step: voltage response function for ; The new voltage response function E(T) is , where F, The values ​​of C1 and C2 are obtained through step S2.

5. The temperature calibration method according to claim 1, characterized in that: The photoelectric measurement system includes a photoelectric detection device, and the light intensity measurement system also pre-stores wavelength response characteristic information of the photoelectric detection device. In step S1, the steps of obtaining the thermal radiation emitted by the standard heat source at different set temperatures not exceeding 700 degrees Celsius through the light intensity measurement system and performing light intensity measurement and calculation processing include: The spectral response information corresponding to the thermal radiation emitted by the standard heat source at each of the set temperatures is obtained by the light intensity measurement system, and the reference central wavelength of the filter device is calculated based on the wavelength response characteristic information and each of the spectral response information. .

6. The temperature calibration method according to claim 5, characterized in that: The wavelength response characteristic information of the photoelectric detection device includes the wavelength response function of the photoelectric detection device The spectral response information corresponding to the thermal radiation emitted at each set temperature includes the spectral response function corresponding to each thermal radiation , obtaining the reference central wavelength of the filter device according to the wavelength response characteristic information and each of the spectral response information The steps include: According to the wavelength response function And each of the spectral response functions Get the reference wavelength at each set temperature , and then according to the reference wavelength The reference central wavelength is obtained by averaging .

7. The temperature calibration method according to claim 6, characterized in that: The light intensity measurement system also pre-stores the response wavelength range of the photoelectric detection device ~ , the reference wavelength at each set temperature satisfy: ; where dλ is a small increment of wavelength λ.

8. The temperature calibration method according to claim 3, characterized in that: In the step S0, the light intensity measurement system includes a filter device, a light intensity detection device and a main control device, and the photoelectric measurement system includes the filter device, the photoelectric detection device and the main control device, and the main control device pre-stores the initial voltage response function ; The optical filter device is used to obtain each of the thermal radiations, each of the test thermal radiations and each of the retest thermal radiations and emit a single light beam corresponding to a specific wavelength band; The light intensity detection device receives and measures the light intensity of each single light beam of a specific wavelength band corresponding to each thermal radiation to obtain corresponding spectral response information; The photoelectric detection device receives and converts the optical information of the single light beams of the specific wavelength band corresponding to each of the test thermal radiations and each of the retest thermal radiations into corresponding voltage information respectively; The main control device receives and responds to the voltage information and the initial voltage response function respectively. Perform the corresponding fitting calculations.

9. The temperature calibration method according to claim 8, characterized in that: The main control device also pre-stores the wavelength response characteristic information of the photoelectric detection device, so as to calculate the reference central wavelength of the filter device according to the wavelength response characteristic information and each spectral response information. .

10. The temperature calibration method according to claim 1, characterized in that: The voltage response function (T, F, δ) satisfies: 。 11. The temperature calibration method according to claim 1, characterized in that: The temperature difference between adjacent retest set temperatures does not exceed 50 degrees Celsius, and the temperature range of each retest set temperature does not exceed 100 degrees Celsius.

12. The temperature calibration method according to claim 1, characterized in that: The temperature difference between adjacent test set temperatures is not less than 100 degrees Celsius, and the temperature range between each adjacent test set temperature includes at least one retest set temperature.

13. The temperature calibration method according to claim 1, characterized in that: The filter device includes a long-wave pass filter, and the photoelectric measurement system also includes a photoelectric detection device, so that the combination of the photoelectric detection device and the long-wave pass filter also plays the role of a bandpass filter.

14. The temperature calibration method according to claim 13, characterized in that: The working wavelength range of the photoelectric detection device is 200-1000 nanometers, and the combination of the photoelectric detection device and the long-wave pass filter also plays the role of a bandpass filter with a bandwidth of not less than 50 nanometers.

15. A temperature measurement system, characterized in that: include: A filter device, used for receiving the thermal radiation emitted from the low-temperature semiconductor device and emitting a single light beam of a specific wavelength band; A photoelectric detection device, arranged on the light output path of the filter device or connected to the filter device to realize optical communication, for receiving and converting the optical information of the single light beam in the specific wavelength band into corresponding voltage information; The main control device is communicatively connected to the photoelectric detection device and pre-stores a new voltage response function E(T) obtained by the temperature calibration method according to any one of claims 1 to 14.

16. A temperature measurement method, characterized in that: include: Providing a low-temperature semiconductor device and a temperature measurement system as claimed in claim 15; Controlling the set temperature in the low-temperature semiconductor device to be no higher than 700 degrees Celsius; The optical filter device of the temperature measurement system receives the thermal radiation emitted from the low-temperature semiconductor device and emits a single light beam of a specific wavelength band; The photoelectric detection device of the temperature measurement system receives and converts the optical information of the single light beam in the specific wavelength band into voltage information; The main control device of the temperature measurement system obtains the corresponding measured temperature according to the voltage information and the new voltage response function E(T).

Images