Defect detection method, device and equipment and storage medium

Abstract

The invention discloses a defect detection method, device and equipment and a storage medium. The method comprises the following steps: scanning a target sample through an atomic force microscope to determine a target defect; the depth-to-width ratio of the target defect is less than 0.01; and determining at least one level of mark point according to the target defect so as to position the target defect through the at least one level of mark point. By adopting the technical scheme, the target defects with the minimum depth-to-width ratio can be more accurately positioned in the target sample, missing detection or false detection possibly occurring in a traditional defect detection method is avoided, and the positioning accuracy of the defects with the minimum depth-to-width ratio is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of data processing, and particularly to a defect detection method, device, equipment and storage medium. Background Art

[0002] In the process of manufacturing precision electronic devices, such as in the manufacturing processes of magnetic recording thin film devices or semiconductor wafer devices, due to the imperfect process and materials used, defects such as voids, accumulations, foreign particles, contaminations, or crystalline phase defects often occur inside the device thin film layer or between the film layers. Some of these defects have a very small aspect ratio, for example, a depth of 5 nanometers, a width spanning 5 micrometers, and an aspect ratio less than one-thousandth.

[0003] Such defects with extremely small aspect ratios can hardly be observed by a scanning electron microscope (SEM) because the contour change of the defect is very slow and no observable contrast can be generated in the scanning electron microscope. Therefore, such defects with extremely small aspect ratios can be sensed during product electrical property or function testing, but when analyzing their material properties using focused ion beam (FIB) to cut the defect, the problem of unable to locate the defect is encountered. Summary of the Invention

[0004] Embodiments of the present invention provide a defect detection method, device, equipment and storage medium, which can achieve precise positioning of defects with extremely small aspect ratios.

[0005] In a first aspect, an embodiment of the present invention provides a defect detection method, including:

[0006] Scanning a target sample by an atomic force microscope to determine a target defect; the aspect ratio of the target defect is less than 0.01;

[0007] Determining at least one level of marker points according to the target defect, so as to locate the target defect through at least one level of the marker points.

[0008] Optionally, determining at least one level of marker points according to the target defect, so as to locate the target defect through at least one level of the marker points, includes:

[0009] Determining a reference point according to the morphology of the target defect, where the reference point is the highest or lowest point of the target defect in the depth direction;

[0010] Determine the first-level marking points according to the reference points; the first-level marking points include at least one set of first marking point groups, each set of first marking point groups includes two first marking points, and the two first marking points in the same first marking point group are located on both sides of the reference point and collinear with the reference point;

[0011] Locate the target defect according to the first-level marking points.

[0012] Optionally, determining the first-level marking points according to the reference points includes:

[0013] Determine the first A marking point group and the first B marking point group according to the reference point; the first A marking point group includes two first A marking points, and the two first A marking points in the same first A marking point group are located on both sides of the reference point along the first direction and collinear with the reference point; the first B marking point group includes two first B marking points, and the two first B marking points in the same first B marking point group are located on both sides of the reference point along the second direction and collinear with the reference point; the first direction and the second direction intersect.

[0014] Optionally, determining at least one level of marking points according to the target defect to locate the target defect through at least one level of the marking points includes:

[0015] Determine a reference point according to the shape of the target defect, and the reference point is the highest or lowest point of the target defect in the depth direction;

[0016] Determine the first-level marking points and the second-level marking points according to the reference point; the first-level marking points include at least one set of first marking point groups, each set of first marking point groups includes two first marking points, and the two first marking points in the same first marking point group are located on both sides of the reference point and collinear with the reference point; the second-level marking points include at least one set of second marking point groups, each set of second marking point groups includes two second marking points, and the two second marking points are located on both sides of the reference point and collinear with the reference point; in the width direction of the target defect, the distance between at least one of the first-level marking points and the reference point is greater than the distance between the second-level marking points and the reference point;

[0017] Locate the target defect according to the first-level marking points and the second-level marking points.

[0018] Optionally, determining at least one level of marking points according to the target defect includes:

[0019] Based on the target defect, use the nanoindentation probe in the atomic force microscope to indent for a target duration in an inelastic indentation manner, so as to indent at least one level of the marked points with a preset depth;

[0020] Wherein, the preset depth is 1nm to 99nm.

[0021] Optionally, after positioning the target defect through at least one level of the marked points, it includes:

[0022] Adopt a focused ion beam method to cut the target defect based on at least one level of the marked points.

[0023] Optionally, determining at least one level of marked points according to the target defect includes:

[0024] Determine at least one level of the marked points within a preset distance range on the surface of the target sample from the target defect;

[0025] The preset distance range is 100nm to 10μm.

[0026] In a second aspect, an embodiment of the present invention further provides a defect detection device, including:

[0027] A scanning module, configured to scan a target sample through an atomic force microscope to determine a target defect; the aspect ratio of the target defect is less than 0.01;

[0028] A positioning module, configured to determine at least one level of marked points according to the target defect, so as to position the target defect through at least one level of the marked points.

[0029] In a third aspect, an embodiment of the present invention further provides a defect detection device, including:

[0030] One or more processors;

[0031] A storage device, configured to store one or more programs,

[0032] When the one or more programs are executed by the one or more processors, the one or more processors implement the defect detection method described in any embodiment of the present invention.

[0033] In a fourth aspect, an embodiment of the present invention further provides a computer-readable storage medium, on which a computer program is stored, characterized in that when the program is executed by a processor, it implements the defect detection method described in any embodiment of the present invention.

[0034] In this embodiment, an atomic force microscope is used to scan a target sample to determine target defects, and at least one level of marking points are determined based on the target defects, so as to locate target defects with an aspect ratio less than 0.01 through the at least one level of marking points, and these target defects with extremely small aspect ratios can be more accurately located in the target sample, avoiding missed detection or false detection that may occur in traditional defect detection methods, and improving the positioning accuracy of defects with extremely small aspect ratios.

[0035] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present invention, nor is it used to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. Brief Description of the Drawings

[0036] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0037] Figure 1 is a flowchart of a defect detection method provided by an embodiment of the present invention;

[0038] Figure 2 is a schematic structural diagram of a target defect with an extremely small width-to-depth ratio provided by an embodiment of the present invention;

[0039] Figure 3 is a flowchart of another defect detection method provided by an embodiment of the present invention;

[0040] Figure 4 is a schematic structural diagram of the surface of a target sample provided by an embodiment of the present invention;

[0041] Figure 5 is a flowchart of another defect detection method provided by an embodiment of the present invention;

[0042] Figure 6 is a schematic structural diagram of the surface of another target sample provided by an embodiment of the present invention;

[0043] Figure 7 is a flowchart of another defect detection method provided by an embodiment of the present invention;

[0044] Figure 8 is a schematic structural diagram of a defect detection device provided by an embodiment of the present invention;

[0045] Figure 9 is a schematic structural diagram of a defect detection device provided by an embodiment of the present invention. Detailed Description of the Embodiments

[0046] In order to enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0047] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily need to describe a specific order or sequence. It should be understood that such used data can be interchanged under appropriate circumstances so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0048] Figure 1 is a flowchart of a defect detection method provided by an embodiment of the present invention; Figure 2 is a schematic structural diagram of a target defect with an extremely small aspect ratio provided by an embodiment of the present invention. This embodiment is applicable to the situation of detecting defects with an extremely small aspect ratio. This method can be executed by a defect detection device, which can be implemented in the form of hardware and / or software. This device can be integrated on an electronic device, and the electronic device can be various user terminals or servers.

[0049] As Figure 1 shown, the method of the embodiment of the present invention specifically includes the following steps:

[0050] S110. Scan the target sample with an atomic force microscope to determine the target defect.

[0051] Among them, the target sample can be a sample that has failed and requires defect location, and the failure cause is analyzed based on the located defect. Then the target defect is the defect that needs to be located. As Figure 2As shown, there is a target defect 1 between the A film layer and the B film layer of the target sample. The ratio of the lateral dimension X (i.e., the width of the target defect) to the longitudinal dimension Z (i.e., the depth of the target defect) of the target defect 1 is the aspect ratio of the target defect 1. Exemplarily, the lateral dimension X of the target defect 1 is 5 μm, and the longitudinal dimension Z is 5 nm, so the aspect ratio of the target defect 1 is 0.001. When the aspect ratio of the target defect 1 is less than 0.01, the target defect 1 can be defined as a defect with an extremely small aspect ratio. The contour change of such defects is very slow, making it impossible for a Scanning Electron Microscope (SEM) to detect this defect, and thus it is difficult to locate and analyze the defects of the target sample.

[0052] To address the above problems, the embodiments of the present invention use an Atomic Force Microscope (AFM) to scan target defects with an aspect ratio less than 0.01 to detect the target defects in the target sample. AFM is an analytical instrument that can be used to study the surface structure of solid materials including insulators. It mainly consists of a microcantilever with a tip, a microcantilever motion detection device, a feedback loop for monitoring its motion, a piezoelectric ceramic scanning device for scanning the sample, and a computer-controlled image acquisition, display, and processing system. In AFM, one end of a microcantilever that is extremely sensitive to weak forces is fixed, and there is a tiny tip at the other end. The tip gently touches the surface of the sample. The probe tip always maintains physical contact with the surface of the target sample. During the scanning process, the tip slides on the surface of the target sample. Due to the existence of target defects in the target sample, compared with other positions of the target sample, the defect may be a convex or concave structure. Therefore, when the tip scans past the target defect, the unevenness causes the distance between the tip and the target sample to constantly change, resulting in different bending degrees of the microcantilever. By measuring the bending degree of the microcantilever, the topographical information of the surface of the target sample is obtained, and then the position and morphology of the target defect in the target sample are determined.

[0053] S120. Determine at least one level of marker points according to the target defect to locate the target defect through the at least one level of marker points.

[0054] Specifically, when scanning the target sample with the probe in the atomic force microscope to obtain the target defects on the target sample, at least one level of marker points can be determined on the surface of the target sample near the target defect. The marker points can be understood as points surrounding the target defect. The area where the target defect is located is marked by the area enclosed by the at least one level of marker points, realizing the location of the target defect.

[0055] It should be noted that the level of the marking points can be determined based on the target defect and the accuracy requirement for locating the target defect. For example, if the position of the target defect point is in an area with a relatively large number of non-metallic materials where it is easy to form marking points, and the accuracy requirement for locating the target defect is relatively high, multiple levels of marking points can be set to accurately locate the area where the target defect is located.

[0056] In this embodiment, an atomic force microscope is used to scan the target sample to determine the target defect, and at least one level of marking points is determined based on the target defect, so as to locate the target defect with an aspect ratio less than 0.01 through at least one level of marking points. These target defects with extremely small aspect ratios can be more accurately located in the target sample, avoiding missed detection or false detection that may occur in traditional defect detection methods, and improving the positioning accuracy of defects with extremely small aspect ratios.

[0057] Based on the above embodiment, Figure 3 is a flowchart of another defect detection method provided by an embodiment of the present invention. Figure 4 is a schematic structural diagram of the surface of a target sample provided by an embodiment of the present invention. Figure 3 The defect detection method shown further describes determining at least one level of marking points based on the target defect to locate the target defect through at least one level of marking points. As Figure 3 and Figure 4 shown, the defect detection method includes the following steps:

[0058] S210. Scan the target sample with an atomic force microscope to determine the target defect; the aspect ratio of the target defect is less than 0.01.

[0059] S220. Determine a reference point according to the shape of the target defect, and the reference point is the highest or lowest point of the target defect in the depth direction.

[0060] Specifically, the AFM can not only provide a two-dimensional image of the surface of the target sample, but also obtain height information by measuring the interaction force between the probe and the surface of the target sample, thereby achieving three-dimensional imaging. The probe of the AFM can directly contact the surface of the target sample. When the probe scans the surface of the target sample, due to the presence of target defects such as protrusions or depressions on the target sample, there are height fluctuations on the surface of the target sample at the target defects. The probe will move up and down along with the surface contour. For example, when the probe encounters a protrusion on the surface of the target sample, the probe will be lifted; when it encounters a depression, the probe will drop. This vertical movement of the probe reflects the height change of the sample surface. Through subsequent data processing, the height information of each point on the surface of the target sample can be obtained, and then the three-dimensional morphological image of the surface of the target sample can be obtained by integrating the height information of all scanned points. To facilitate determining the position of the marking point based on the position of the target defect, a reference point can be selected on the target defect to characterize the actual position of the target defect, and then the position of the marking point can be determined according to the position of the reference point. However, in actual situations, the shape of the target defect is usually an irregular graph. If the center of the pattern of the target defect is used as the reference point, the process of determining the reference point is relatively cumbersome. Therefore, based on the three-dimensional image of the target defect scanned by the AFM, when the three-dimensional shape of the target defect is a protrusion, the highest point in the depth direction is extracted from the morphological image of the target sample as the reference point; when the three-dimensional shape of the target defect is a depression, the lowest point in the depth direction is extracted from the morphological image of the target sample as the reference point, which not only ensures the accuracy of positioning the target defect but also improves the detection efficiency.

[0061] S230. Determine the first-level marking points according to the reference point; the first-level marking points include at least one set of first marking point groups, and each set of first marking point groups includes two first marking points. The two first marking points in the same first marking point group are located on both sides of the reference point and are collinear with the reference point.

[0062] Specifically, such as Figure 4As shown in the figure, the reference point 11 can be the highest or lowest point of the target defect determined after the AFM scans the target sample, which characterizes the actual position of the target defect 1 on the target sample. Then, the first-level marking points 2 are determined on the surface of the target sample around the reference point 11 according to the position of the reference point 11. The first-level marking points 2 include at least one set of first marking point groups 21, and each set of first marking point groups 21 includes two first marking points. Among them, the two first marking points in the same first marking point group 21 are distributed on both sides of the reference point 11 and are collinear with the reference point 11. In this way, the at least one set of first marking point groups 21 determined is like constructing a precise "coordinate system" for the target defect. For example, when detecting a pit defect with a very small aspect ratio, the reference point 11 is the deepest part of the pit, and the two first marking points in the same group are respectively on both sides of the pit and the line connecting them must pass through the reference point 11, so that the position and range of the pit can be accurately determined, and the positioning error can be controlled within a very small range.

[0063] S240. Locate the target defect according to the first-level marking points.

[0064] Specifically, since the two first marking points in the same first marking point group 21 are located on both sides of the reference point 11 and are collinear with the reference point 11, the position of the target defect 1 is between at least one set of first marking point groups 21, that is, at least one set of first marking point groups 21 defines the area where the target defect 1 is located. When it is necessary to locate the target defect, the area where the target defect 1 is located can be defined by the first-level marking points 2 to achieve the positioning of the target defect 1. Moreover, the relative position relationship between the first-level marking points 2 and the reference point 11 is fixed and clear. In a complex detection environment, even if the target sample has a certain degree of tilt, translation or rotation, as long as the relative positions of the reference point 11 and its corresponding first-level marking points 2 remain unchanged, the influence of the change in the position of the target sample on the positioning accuracy of the target defect can be effectively reduced, ensuring that the area where the target defect is located can be accurately found under different detection conditions.

[0065] In this embodiment, the highest or lowest point of the target defect is used as the reference point to characterize the position of the target defect. Based on the reference point, the first-level marking points including at least one set of first marking point groups are determined around it. Among them, each set of first marking point groups includes two first marking points located on both sides of the reference point and collinear with the reference point, so as to realize the positioning of the target defect according to the first-level marking points, improving the accuracy and efficiency of the positioning detection of the target defect.

[0066] Optionally, determining the first-level marking points 2 according to the reference point 11 includes:

[0067] Determine a first group of mark points of type A 211 and a first group of mark points of type B 212 based on the reference point 11; the first group of mark points of type A 211 includes two first mark points of type A, and the two first mark points of type A in the same first group of mark points of type A are located on both sides of the reference point 11 along the first direction M and are collinear with the reference point 11; the first group of mark points of type B 212 includes two first mark points of type B, and the two first mark points of type B in the same first group of mark points of type B are located on both sides of the reference point 11 along the second direction N and are collinear with the reference point 11; the first direction M and the second direction N intersect.

[0068] Specifically, continue to refer to Figure 4 , the first-level mark points 2 may include two groups of first mark point groups 21, namely the first group of mark points of type A 211 and the first group of mark points of type B 212. When determining the first group of mark points of type A 211, the positions of the two first mark points of type A in the first group of mark points of type A can be determined at intervals on both sides of the reference point 11 along the first direction M, that is, the first group of mark points of type A 211 includes two first mark points of type A, the two first mark points of type A are located on both sides of the reference point 11, and the line connecting the two first mark points of type A passes through the reference point 11 and the extending direction is the first direction M; when determining the first group of mark points of type B 212, the positions of the two first mark points of type B in the first group of mark points of type B can be determined at intervals on both sides of the reference point 11 along the second direction N, that is, the first group of mark points of type B 212 includes two first mark points of type B, the two first mark points of type B are located on both sides of the reference point 11, and the line connecting the two first mark points of type B passes through the reference point 11 and the extending direction is the second direction N, the first direction M and the second direction N intersect, and the intersection point is the reference point 11. The two determined first mark points of type A and the two first mark points of type B are respectively located at the upper left, right, upper and lower sides of the target defect 1, and the connections of the two groups of first-level mark points 2 on the left and right and up and down around the reference point 11 both penetrate the reference point 11, and the combination of the first direction M and the second direction N multi-dimensionally defines the area where the target defect 1 is located. By setting mark points in different directions, the accuracy and reliability of detecting the target defect are improved.

[0069] It should be noted that the distances between the two first mark points of type A and the reference point 11 respectively along the first direction M, and the distances between the two first mark points of type B and the reference point 11 respectively along the second direction N can be the same or different. Under the condition that the two first mark points of type A are located on both sides of the reference point 11 and are collinear with the reference point 11 along the first direction M, and the two first mark points of type B are located on both sides of the reference point 11 and are collinear with the reference point 11 along the second direction N, this embodiment does not make specific limitations on the distance relationship between the four and the reference point 11.

[0070] On the basis of the above embodiment, Figure 5 is another flowchart of the defect detection method provided by the embodiment of the present invention.Figure 6 It is another schematic diagram of the structure on the surface of the target sample provided by the embodiment of the present invention. Figure 5 The described defect detection method further illustrates determining at least one level of marking points according to the target defect to locate the target defect through the at least one level of marking points. As Figure 5 and Figure 6 shown, the defect detection method includes the following steps:

[0071] S310. Scan the target sample with an atomic force microscope to determine the target defect; the aspect ratio of the target defect is less than 0.01.

[0072] S320. Determine a reference point according to the morphology of the target defect, and the reference point is the highest or lowest point of the target defect in the depth direction.

[0073] S330. Determine the first-level marking points and the second-level marking points according to the reference point.

[0074] Among them, the first-level marking points include at least one group of first marking point groups, each group of first marking point groups includes two first marking points, the two first marking points in the same first marking point group are located on both sides of the reference point and are collinear with the reference point; the second-level marking points include at least one group of second marking point groups, each group of second marking point groups includes two second marking points, the two second marking points are located on both sides of the reference point and are collinear with the reference point; in the width direction of the target defect, the distance between at least one first-level marking point and the reference point is greater than the distance between the second-level marking point and the reference point.

[0075] Specifically, as Figure 6As shown, the reference point 11 can be the highest or lowest point of the target defect determined after AFM scans the target sample, which characterizes the actual position of the target defect 1 on the target sample. Then, according to the position of the reference point 11, the first-level marking points 2 are determined on the surface of the target sample around it. The first-level marking points 2 include at least one set of first marking point groups 21, and each set of first marking point groups 21 includes two first marking points. Among them, the two first marking points in the same first marking point group 21 are distributed on both sides of the reference point 11 and are collinear with the reference point 11. However, since the size of the target defect is at the nanometer level, there may be errors in the first-level marking points 2 determined by scanning the target defect 1 once. Therefore, in order to reduce the error in the positioning detection of the target defect 1, the second-level marking points 3 can be determined on the surface of the target sample around the reference point 11 according to the positions of the reference point 11 and the first-level marking points 2. The second-level marking points 3 include at least one set of second marking point groups 31, and each set of second marking point groups 31 includes two second marking points. Among them, the two second marking points in the same second marking point group 31 are distributed on both sides of the reference point 11 and are collinear with the reference point 11. Moreover, in the width direction of the target defect 1, the distance between at least one first-level marking point 2 and the reference point 11 is greater than the distance between the second-level marking point 3 and the reference point 11. By combining the reference point 11 with the distance between at least one first-level marking point 2 and the reference point 11, the position of the second-level marking point 3 is determined, ensuring that, based on the first-level marking points 2, the determined second-level marking points 3 are closer to the reference point 11, further narrowing the range of the area where the target defect 1 is located and improving the detection accuracy of the target defect.

[0076] Exemplarily, if more precise defect detection is required, based on the first-level marking points 2, on the straight line formed by two first marking points in one set of first marking point groups 21 of the first-level marking points 2 and the reference point 11, the second-level marking points 3 are made on the surface of the target sample around the reference point 11. The distances between the two second marking points and the reference point 11 are both less than the distance between the first marking point and the reference point 11, further narrowing the range of the area where the target defect 1 is located and also avoiding the error problem brought by the first-level marking points 2 in positioning the target defect 1. Among them, the depth of the second marking point is the same as or similar to the depth of the first marking point, and the icon size is the same or smaller.

[0077] It should be noted that the distances between the two second marking points and the reference point 11 can be the same or different, and the embodiments of the present invention do not make specific limitations on this.

[0078] S340. Locate the target defect according to the first-level marking points and the second-level marking points.

[0079] Specifically, the target defect can be located by the first-level marking points and the second-level marking points, and the location range of the target defect can be determined multi-dimensionally and multiple times, improving the accuracy of target defect detection and avoiding the error problem caused by determining the target defect only through the first-level marking points.

[0080] In this embodiment, the highest point or the lowest point of the target defect is used as a reference point for characterizing the position of the target defect. Based on the reference point, the first-level marking points and the second-level marking points are determined around it, so as to realize the positioning of the target defect according to the first-level marking and the second-level marking points. The combination of the two-level marking points reduces the range of the area where the target defect is located, improves the detection accuracy of the target defect, and at the same time avoids the error problem caused by positioning the target defect only once through the first-level marking points.

[0081] Based on the above embodiment, Figure 7 is another flowchart of the defect detection method provided by the embodiment of the present invention. Figure 7 The defect detection method shown further illustrates determining at least one level of marking points according to the target defect to locate the target defect through the at least one level of marking points. As Figure 7 shown, the defect detection method includes the following steps:

[0082] S410. Scan the target sample with an atomic force microscope to determine the target defect; the aspect ratio of the target defect is less than 0.01.

[0083] S420. Determine at least one level of marking points according to the target defect to locate the target defect through the at least one level of marking points.

[0084] S430. Cut the target defect based on at least one level of marking points by using a focused ion beam method.

[0085] Among them, the focused ion beam (FIB) technology focuses the ion beam to the sub-micron or even nano scale, and uses the deflection system and the acceleration system to control the scanning movement of the ion beam to detect and analyze micro-nano patterns and perform maskless processing on micro-nano structures.

[0086] Specifically, in the embodiments of the present invention, an atomic force microscope (AFM) can be used to determine whether a target defect exists in a target sample and locate the target defect. However, it cannot accurately cut the target defect and effectively analyze the target defect. A focused ion beam instrument cannot effectively locate the target defect, but it can accurately cut the located target defect and effectively analyze the target defect. Considering the above situation, at least one level of marking points can be determined by AFM. After locating the target defect through the at least one level of marking points, the target analysis sample is moved into the focused ion beam instrument, so that the focused ion beam instrument can accurately control the scanning path of the ion beam according to the at least one level of marking points as the cutting path and range, and make it cut the target defect along a preset trajectory, which can effectively improve the working efficiency of defect detection and analysis.

[0087] In this embodiment, at least one level of marking points is used as the cutting path, and the focused ion beam method is adopted based on the positions of the at least one level of marking points to cut the target defect along a preset trajectory, which can effectively improve the cutting accuracy of the target defect and the working efficiency of detection and analysis.

[0088] Optionally, determining at least one level of marking points according to the target defect includes:

[0089] Based on the target defect, the nanoindentation probe in the atomic force microscope is used to indent the target for a target duration in an inelastic indentation manner to indent at least one level of marking points with a preset depth;

[0090] Wherein, the preset depth is 1 nm to 99 nm.

[0091] Specifically, the AFM has a nanoindentation function. After scanning the target sample by AFM to determine the target defect, the positions of at least one level of marking points are determined according to the position of the target defect. Then, the position of the AFM diamond nanoindentation probe is adjusted to align it with the position of the marking points, and a certain indentation force and target duration are controlled to work in an inelastic indentation manner, so that the probe indents a pit with a preset depth on the surface of the target sample. These pits serve as the marking points, and the preset depth can be adjusted between 1 nm and 99 nm according to actual needs to meet different observation and analysis requirements and ensure the quality and accuracy of the marking points. It should be noted that the inelastic indentation method means that when the probe indents the surface of the target sample, it causes certain plastic deformation, resulting in irreversible deformation on the indented surface of the sample.

[0092] Optionally, determining at least one level of marking points according to the target defect includes:

[0093] Determining at least one level of marking points within a preset distance range from the target defect on the surface of the target sample;

[0094] The preset distance range is 100 nm to 10 μm.

[0095] Specifically, determining at least one level of marking points within a preset distance range of 100 nm to 10 μm can more accurately define the scope of the target defect. For a target defect with an extremely small aspect ratio, this distance range can help operators or detection systems more accurately determine the location area of the target defect, avoiding inaccurate positioning caused by the at least one level of marking points being too far or too close to the target defect, thereby improving the determination accuracy of the target defect's position. At the same time, during the detection process of the target defect, the closer the distance from the first-level marking point to the target defect, the smaller the error generated during the measurement and positioning process. By setting the marking points within this relatively close distance range, the accumulation of errors can be effectively reduced, making the final positioning of the defect more accurate and reliable.

[0096] Based on the same inventive concept, Figure 8 is a schematic structural diagram of a defect detection device provided by an embodiment of the present invention, as Figure 8 shown. The defect detection device includes: a scanning module 510 and a positioning module 520;

[0097] The scanning module 510 is configured to scan a target sample through an atomic force microscope to determine a target defect; the aspect ratio of the target defect is less than 0.01;

[0098] The positioning module 520 is configured to determine at least one level of marking points based on the target defect to position the target defect through the at least one level of marking points.

[0099] The defect detection device provided by the embodiment of the present invention can execute the defect detection method provided by any embodiment of the present invention, and has the corresponding functional modules and beneficial effects of the execution method.

[0100] Figure 9 shows a schematic structural diagram of an electronic device 80 that can be used to implement the embodiments of the present invention. The electronic device is intended to represent various forms of digital computers, such as, laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as, personal digital processors, cellular phones, smart phones, wearable devices (such as helmets, glasses, watches, etc.) and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the present invention described herein and / or claimed.

[0101] As Figure 9As shown, the electronic device 80 includes at least one processor 81 and a memory communicatively connected to the at least one processor 81, such as a read-only memory (ROM) 82, a random access memory (RAM) 83, etc. The memory stores a computer program executable by the at least one processor. The processor 81 can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM) 82 or the computer program loaded from the storage unit 88 into the random access memory (RAM) 83. In the RAM 83, various programs and data required for the operation of the electronic device 80 can also be stored. The processor 81, the ROM 82, and the RAM 83 are connected to each other via a bus 84. An input / output (I / O) interface 85 is also connected to the bus 84.

[0102] Multiple components in the electronic device 80 are connected to the I / O interface 85, including: an input unit 86, such as a keyboard, a mouse, etc.; an output unit 87, such as various types of displays, speakers, etc.; a storage unit 88, such as a magnetic disk, an optical disc, etc.; and a communication unit 89, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 89 allows the electronic device 80 to exchange information / data with other devices via a computer network such as the Internet and / or various telecommunication networks.

[0103] The processor 81 can be various general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the processor 81 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any appropriate processor, controller, microcontroller, etc. The processor 81 executes the various methods and processes described above, such as the defect detection method.

[0104] In some embodiments, the defect detection method can be implemented as a computer program tangibly embodied in a computer-readable storage medium, such as the storage unit 88. In some embodiments, part or all of the computer program can be loaded and / or installed onto the electronic device 80 via the ROM 82 and / or the communication unit 89. When the computer program is loaded into the RAM 83 and executed by the processor 81, one or more steps of the defect detection method described above can be executed. Alternatively, in other embodiments, the processor 81 can be configured to execute the defect detection method in any other appropriate manner (e.g., by means of firmware).

[0105] The various embodiments of the systems and techniques described above in this specification can be implemented in digital electronic circuitry, integrated circuit systems, field programmable gate arrays (FPGAs), application specific integrated circuits (ASICs), application specific standard products (ASSPs), systems on a chip (SOCs), complex programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments can include: being implemented in one or more computer programs that are executable and / or interpretable on a programmable system including at least one programmable processor, which can be a special-purpose or general-purpose programmable processor that receives data and instructions from, and transmits data and instructions to, a storage system, at least one input device, and at least one output device.

[0106] The computer program for implementing the methods of the present invention can be written in any combination of one or more programming languages. These computer programs can be provided to a processor of a general purpose computer, special purpose computer, or other programmable data processing apparatus, such that the computer programs, when executed by the processor, cause the functions / operations specified in the flowchart and / or block diagram to be implemented. The computer program can be executed entirely on the machine, partly on the machine, as a stand-alone software package partly on the machine and partly on a remote machine or entirely on the remote machine or server.

[0107] In the context of the present invention, a computer-readable storage medium can be a tangible medium that can contain or store a computer program for use by or in connection with an instruction execution system, apparatus, or device. The computer-readable storage medium can include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. Alternatively, the computer-readable storage medium can be a machine-readable signal medium. More specific examples of the machine-readable storage medium would include an electrical connection based on one or more wires, a portable computer diskette, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or Flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0108] To provide interaction with a user, the systems and techniques described herein can be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or a trackball) by which the user can provide input to the electronic device. Other kinds of devices can also be used to provide interaction with the user; for example, the feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including acoustic input, voice input, or tactile input).

[0109] The systems and techniques described herein can be implemented in a computing system including backend components (e.g., as a data server), or a computing system including middleware components (e.g., an application server), or a computing system including frontend components (e.g., a user computer having a graphical user interface or a web browser through which the user can interact with an implementation of the systems and techniques described herein), or a computing system including any combination of such backend components, middleware components, or frontend components. The components of the system can be interconnected to each other by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: local area network (LAN), wide area network (WAN), blockchain network, and the Internet.

[0110] A computing system can include a client and a server. The client and the server are generally remote from each other and typically interact through a communication network. The relationship between the client and the server is generated by computer programs running on the respective computers and having a client-server relationship with each other. The server can be a cloud server, also known as a cloud computing server or a cloud host, which is a host product in the cloud computing service system and solves the defects of difficult management and weak business scalability existing in traditional physical hosts and VPS services.

[0111] It should be understood that various forms of the processes shown above can be used, with steps reordered, added, or deleted. For example, the steps recited in the present invention can be executed in parallel, sequentially, or in a different order, as long as the desired results of the technical solution of the present invention can be achieved, and no limitation is made herein.

[0112] The above specific embodiments do not constitute a limitation on the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A defect detection method, characterized in that: include: Scanning the target sample by atomic force microscopy to determine the target defect; The aspect ratio of the target defect is less than 0.01; At least one level of marking point is determined according to the target defect, so as to locate the target defect through the at least one level of marking point.

2. The defect detection method according to claim 1, characterized in that: Determining at least one level of marking point according to the target defect, so as to locate the target defect through the at least one level of marking point, including: Determine a reference point according to the shape of the target defect, wherein the reference point is the highest point or the lowest point of the target defect in the depth direction; Determine first-level marking points according to the reference point; the first-level marking points include at least one group of first marking point groups, each group of the first marking point groups includes two first marking points, and the two first marking points in the same first marking point group are located on both sides of the reference point and are collinear with the reference point; The target defect is located according to the first-level marking points.

3. The defect detection method according to claim 2, characterized in that: Determining a first-level marking point according to the reference point includes: A first A marking point group and a first B marking point group are determined according to the reference point; the first A marking point group includes two first A marking points, and the two first A marking points in the same first A marking point group are located on both sides of the reference point along a first direction and are collinear with the reference point; the first B marking point group includes two first B marking points, and the two first B marking points in the same first B marking point group are located on both sides of the reference point along a second direction and are collinear with the reference point; the first direction and the second direction intersect.

4. The defect detection method according to claim 1, characterized in that: Determining at least one level of marking point according to the target defect, so as to locate the target defect through the at least one level of marking point, including: Determine a reference point according to the shape of the target defect, wherein the reference point is the highest point or the lowest point of the target defect in the depth direction; Determine the first-level marking points and the second-level marking points according to the reference point; the first-level marking points include at least one group of first marking point groups, each group of the first marking point group includes two first marking points, and the two first marking points in the same first marking point group are located on both sides of the reference point and are collinear with the reference point; the second-level marking points include at least one group of the second marking point groups, each group of the second marking point group includes two second marking points, and the two second marking points are located on both sides of the reference point and are collinear with the reference point; in the target defect width direction, the distance between at least one of the first-level marking points and the reference point is greater than the distance between the second-level marking point and the reference point; The target defect is located according to the first-level marking points and the second-level marking points.

5. The defect detection method according to claim 1, characterized in that: Determining at least one primary marking point according to the target defect includes: Based on the target defect, the nanoindentation probe in the atomic force microscope indents the target defect in an inelastic indentation manner for a certain period of time to indent at least one level of the marking point with a preset depth; Wherein, the preset depth is 1nm to 99nm.

6. The defect detection method according to claim 1, characterized in that: After locating the target defect through at least one level of the marking point, the method includes: The target defect is cut based on at least one level of the marking point by using a focused ion beam.

7. The defect detection method according to claim 1, characterized in that: Determining at least one primary marking point according to the target defect includes: Determine at least one level of the marking point within a preset distance interval between the surface of the target sample and the target defect; The preset distance interval is 100 nm to 10 μm.

8. A defect detection device, characterized in that: include: A scanning module, used for scanning a target sample through an atomic force microscope to determine a target defect; The aspect ratio of the target defect is less than 0.01; A positioning module is used to determine at least one level of marking points according to the target defect, so as to locate the target defect through at least one level of marking points.

9. A defect detection device, characterized in that: include: one or more processors; a storage device for storing one or more programs, When the one or more programs are executed by the one or more processors, the one or more processors implement the defect detection method as described in any one of claims 1 to 7.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the program is executed by a processor, the defect detection method as described in any one of claims 1 to 7 is implemented.

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