Diode light emitting device, laser light emitting device and resonant cavity light emitting device

Abstract

The invention provides a diode light-emitting device, a laser light-emitting device and a resonant cavity light-emitting device, and relates to the technical field of semiconductors. The diode light-emitting device comprises a reflector and a light-emitting composite layer, wherein the light-emitting composite layer is positioned in a resonant cavity formed by the reflector; the light-emitting composite layer comprises an N-type electrode, a P-type electrode, a first light-emitting layer and a second light-emitting layer, and the first light-emitting layer forms a pumping region and a functional region; the second light-emitting layer forms a functional area; the first light-emitting layer is stacked on the side, close to the P-type electrode, of the second light-emitting layer, at least one wavelength of light emitted by the first light-emitting layer is smaller than or equal to the wavelength of light emitted by the second light-emitting layer, and the first light-emitting layer is used for exciting the second light-emitting layer to emit light; the wavelength number of light emitted by the diode light-emitting device is greater than or equal to 1. The light-emitting efficiency of the diode light-emitting device can be improved, the structural complexity and the process difficulty of the diode light-emitting device are reduced, the size is small, reliability is high, and cost is low.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular, to a diode light-emitting device, a laser light-emitting device, and a resonant cavity light-emitting device. Background Art

[0002] As a common light-emitting device, the diode light-emitting device is widely used in many fields such as communication, display, lighting, and medical treatment.

[0003] In related technologies, a laser diode (LD for short), as a light-emitting device that converts electrical energy into laser output, a conventional laser diode only has a single light-emitting layer and a single light-emitting unit, and the pump source and the gain medium are in the same region. When preparing a multi-wavelength laser diode, multiple laser diodes are usually required to cooperate, or color conversion materials are used to form a multi-wavelength laser diode. A resonant cavity light-emitting diode (RCLED for short), as a combination of a vertical cavity surface emitting laser (VCSELs for short) and a traditional light-emitting diode (LED for short), has the advantages of both. Compared with traditional LEDs, the light emitted by RCLED has greater light intensity, extraction efficiency, and modulation bandwidth, as well as better directivity, spectral purity, and temperature reliability. The existing resonant cavity light-emitting diode only has one light-emitting layer.

[0004] Both the above-mentioned laser diode and resonant cavity light-emitting diode have the problem of low light-emitting efficiency, and the prepared multi-wavelength laser diode and resonant cavity light-emitting diode have problems of low light-emitting efficiency, complicated process, complex structure, large volume, poor reliability, and high cost. Summary of the Invention

[0005] The present application provides a diode light-emitting device, a laser light-emitting device, and a resonant cavity light-emitting device, which can improve the light-emitting efficiency of the diode light-emitting device, reduce its structural complexity and process difficulty, have a small volume, high reliability, and low cost.

[0006] In a first aspect, the present application provides a diode light-emitting device, including:

[0007] A mirror, the mirror constituting a resonant cavity;

[0008] A light-emitting composite layer, the light-emitting composite layer being located in the resonant cavity; the light-emitting composite layer includes:

[0009] An N-type electrode;

[0010] P-type electrode

[0011] The first light-emitting layer, which is used to emit light with at least one wavelength, forming a pumping area and a functional area

[0012] The second light-emitting layer, which is used to emit light with at least one wavelength, forming a functional area

[0013] The first light-emitting layer is laminated on one side of the second light-emitting layer close to the P-type electrode. At least one wavelength of the light emitted by the first light-emitting layer is less than or equal to the wavelength of the light emitted by the second light-emitting layer, and it is used to excite the second light-emitting layer to emit light

[0014] The number of wavelengths of the light emitted by the diode light-emitting device is greater than or equal to 1

[0015] In a second aspect, the present application provides a laser light-emitting device, including the diode light-emitting device described above

[0016] In a third aspect, the present application provides a resonant cavity light-emitting device, including the diode light-emitting device described above

[0017] For the diode light-emitting device, laser light-emitting device and resonant cavity light-emitting device provided by the present application, by setting a mirror in the diode light-emitting device, it is used to form a resonant cavity for the light emitted by the light-emitting recombination layer to be reflected multiple times. The resonant cavity reflects 100% of the short-wavelength light of the first light-emitting layer, and there is no central photon overflow, which can improve the external quantum efficiency (External Quantum Efficiency, abbreviated as EQE) of the diode light-emitting device. By setting the first light-emitting layer and the second light-emitting layer in the light-emitting recombination layer, the light emitted by the first light-emitting layer can excite the second light-emitting layer to emit light. The first light-emitting layer is used to form a pumping area and a functional area, and the second light-emitting layer is used to form a functional area. This functional area can be the gain area, color conversion area, beam shaping area and spectral half-width modulation area of the laser light-emitting device, or can be the color conversion area, beam shaping area and spectral half-width modulation area of the resonant cavity light-emitting device. By separating the pumping area and the functional area into two light-emitting layers, the short-wavelength light of the first light-emitting layer excites the long-wavelength light of the second light-emitting layer, and the high-energy light of the first light-emitting layer excites the low-energy light of the second light-emitting layer, which can enable different regions to achieve efficient photoluminescence and efficient electroluminescence respectively, thereby improving the light-emitting efficiency and EQE of the diode light-emitting device and reducing the threshold current of light emission

[0018] Based on the fact that the first light-emitting layer emits short-wavelength light and has high EQE and luminous efficiency by itself. During the preparation process, the second light-emitting layer is epitaxially grown first, and then the first light-emitting layer is epitaxially grown. The distance between the first light-emitting layer and the second light-emitting layer is relatively close, and the second light-emitting layer can release stress in advance, thereby reducing the crystal defect density of the first light-emitting layer. Compared with the traditional short-wavelength light-emitting layer, the EQE of this application is higher. Based on the fact that the first light-emitting layer has high EQE as the pumping area, the diode light-emitting device can also have high EQE, and the threshold current is relatively extremely low.

[0019] Moreover, the structure of the diode light-emitting device of this application is relatively simple, the process difficulty is low, the reliability is high, and the cost is low. When this diode light-emitting device is applied to a laser light-emitting device, the light extraction efficiency of the laser can be improved. When this laser light-emitting device is used for laser display, the resolution can also be improved. When this diode light-emitting device is applied to a resonant cavity light-emitting device, the light extraction efficiency can also be improved, and the light extraction performance can be enhanced.

[0020] The structure of this application and its other invention purposes and beneficial effects will become more obvious and understandable through the description of the preferred embodiments in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are some embodiments of the present application. For those of ordinary skill in the art, other accompanying drawings can be obtained based on these drawings without creative efforts.

[0022] Figure 1 It is a schematic structural diagram of a surface-emitting laser diode in the related art;

[0023] Figure 2 It is a schematic structural diagram of an edge-emitting laser diode in the related art;

[0024] Figure 3 It is a schematic diagram of the light-emitting mechanism of a laser diode in the related art;

[0025] Figure 4 It is a schematic structural diagram of a resonant cavity light-emitting diode in the related art;

[0026] Figure 5 It is a schematic structural diagram of the first surface-emitting diode light-emitting device provided by the embodiment of the present application;

[0027] Figure 6 It is a schematic structural diagram of the first edge-emitting diode light-emitting device provided by the embodiment of the present application;

[0028] Figure 7 Schematic diagram of the structure of the second surface-emitting diode light-emitting device provided by the embodiment of the present application;

[0029] Figure 8 Schematic diagram of the structure of the third surface-emitting diode light-emitting device provided by the embodiment of the present application;

[0030] Figure 9 Schematic diagram of the structure of the fourth surface-emitting diode light-emitting device provided by the embodiment of the present application;

[0031] Figure 10 Schematic diagram of the structure of the fourth edge-emitting diode light-emitting device provided by the embodiment of the present application;

[0032] Figure 11 Schematic diagram of the structure of the fifth surface-emitting diode light-emitting device provided by the embodiment of the present application;

[0033] Figure 12 Schematic diagram of the structure of the fifth edge-emitting diode light-emitting device provided by the embodiment of the present application;

[0034] Figure 13 Schematic diagram of the structure of the sixth surface-emitting diode light-emitting device provided by the embodiment of the present application;

[0035] Figure 14 Schematic diagram of the structure of the sixth edge-emitting diode light-emitting device provided by the embodiment of the present application;

[0036] Figure 15 Schematic diagram of the structure of the seventh surface-emitting diode light-emitting device provided by the embodiment of the present application;

[0037] Figure 16 Schematic diagram of the structure of the seventh edge-emitting diode light-emitting device provided by the embodiment of the present application;

[0038] Figure 17 Schematic diagram of the structure of the eighth surface-emitting diode light-emitting device provided by the embodiment of the present application;

[0039] Figure 18 Schematic diagram of the structure of the ninth surface-emitting diode light-emitting device provided by the embodiment of the present application;

[0040] Figure 19 Schematic diagram of the structure of the tenth surface-emitting diode light-emitting device provided by the embodiment of the present application;

[0041] Figure 20 Schematic diagram of the structure of the eleventh surface-emitting diode light-emitting device provided by the embodiment of the present application;

[0042] Figure 21Schematic diagram of the twelfth surface-emitting diode light-emitting device provided by the embodiment of the present application;

[0043] Figure 22 Schematic diagram of the thirteenth surface-emitting diode light-emitting device provided by the embodiment of the present application;

[0044] Figure 23 Schematic diagram of the fourteenth edge-emitting diode light-emitting device provided by the embodiment of the present application;

[0045] Figure 24 Schematic diagram of the fifteenth edge-emitting diode light-emitting device provided by the embodiment of the present application;

[0046] Figure 25 Schematic diagram of the sixteenth surface-emitting diode light-emitting device provided by the embodiment of the present application;

[0047] Figure 26 Schematic diagram of the seventeenth surface-emitting diode light-emitting device provided by the embodiment of the present application;

[0048] Figure 27 Schematic diagram of the seventeenth edge-emitting diode light-emitting device provided by the embodiment of the present application;

[0049] Figure 28 Schematic diagram of the light-emitting mechanism of the diode light-emitting device provided by the embodiment of the present application.

[0050] Explanation of reference numerals:

[0051] 100, mirror; 101, first mirror; 102, second mirror; 103, third mirror; 200, N-type electrode; 201, N-type semiconductor layer; 202, N-type waveguide layer; 300, P-type electrode; 301, P-type semiconductor layer; 302, P-type waveguide layer; 400, first light-emitting layer; 500, second light-emitting layer; 600, hole blocking layer; 700, light-emitting unit; 800, isolation structure; 900, substrate; 901, insulating layer; 902, electron confinement layer; 903, contact layer; 904, oxide layer; 10, light-emitting layer. Detailed implementation manners

[0052] Refer to Figure 1 and Figure 2As shown, a conventional laser diode includes a mirror 100, which includes a first mirror 101 and a second mirror 102, and a resonant cavity is formed between the first mirror 101 and the second mirror 102. The laser diode further includes an N-type electrode (not shown in the figure) disposed in the resonant cavity, an N-type semiconductor layer 201, a light-emitting layer 10, a P-type semiconductor layer 301, and a P-type electrode (not shown in the figure). When the N-type electrode is energized, current is injected into the N-type semiconductor layer 201 to generate electrons. When the P-type electrode is energized, current is injected into the P-type semiconductor layer 301 to generate holes. The electrons and holes recombine in the light-emitting layer 10 to generate radiative photons. Figure 1 is the structure of a surface-emitting laser diode, Figure 2 is the structure of an edge-emitting laser diode, Figure 1 and Figure 2 the arrows in both are their corresponding light output directions.

[0053] Next, the light-emitting principle of a traditional laser diode will be described. Referring to Figure 3 as shown, Figure 3 (a) A voltage is applied to the N-type electrode and the P-type electrode, and photons are generated in the light-emitting layer 10. Figure 3 (b) The photons are emitted from the light-emitting layer 10 to complete the light-emitting mechanism of electroluminescence. Figure 3 (c) After the photons are reflected by the mirror 100 forming the resonant cavity, they return to the light-emitting layer 10. Figure 3 (d) Some of the photons in the light-emitting layer 10 excite more photons to be generated, completing the light-emitting mechanism of photoluminescence. A large number of photons are finally amplified and mode-selected through multiple reflections in the resonant cavity and then emitted to form a laser.

[0054] Combined with Figure 3 , Figure 1 and Figure 2 the laser diodes in have only a single light-emitting region, that is, the light-emitting layer 10. This light-emitting layer 10 needs to simultaneously have the functions of a pump region and a gain region, and needs to complete two light-emitting mechanisms of efficient photoluminescence and electroluminescence at the same time. Moreover, the single light-emitting layer 10 belongs to equal-energy photon excitation, with a relatively high light-emitting threshold current and a relatively low light-emitting efficiency. Especially for the light-emitting efficiency and light-emitting power of green light and red light.

[0055] When preparing a multi-wavelength laser diode, multiple laser diodes need to be used in cooperation, and the light emitted by the multiple laser diodes is combined through an optical prism. For example, in a laser TV, a red laser diode, a green laser diode, and a blue laser diode are used to form a pixel unit. In this way, the structure of the multi-wavelength laser diode is relatively complex, the assembly difficulty is relatively large, the volume is relatively large, and the cost is relatively high. The multi-wavelength laser diode can also be prepared by using the above-mentioned laser diode in cooperation with a color conversion material. For example, also in a laser TV, three blue laser diodes and a color conversion material are used to form a pixel unit. In this way, the reliability of the color conversion material is relatively poor, the lifespan is relatively short, and the stability is relatively low. Therefore, the reliability of the prepared multi-wavelength laser diode is correspondingly low.

[0056] Moreover, if the thickness of the light-emitting layer 10 of the laser diode is too thick, the reflected light in the resonant cavity cannot be effectively absorbed by the light-emitting layer 10, which affects the light output effect of the light-emitting layer 10 as a gain region. Therefore, the thickness of the light-emitting layer 10 of the traditional laser diode is limited and cannot be set too thick. Generally, the thickness of the barrier layer of the light-emitting layer 10 is 2 - 30 nm, and the thickness of the quantum well layer is 1 - 10 nm.

[0057] Referring Figure 4 As shown, the traditional resonant cavity light-emitting diode has the structures of both a vertical cavity surface emitting laser and a traditional light-emitting diode. The resonant cavity light-emitting diode includes a substrate 900, and a first mirror 101, an N-type semiconductor layer 201, an electron confinement layer 902, a light-emitting layer 10, a P-type semiconductor layer 301, a P-type electrode 300, and a second mirror 102 that are sequentially stacked on the substrate 900. An insulating layer 901 is provided on the P-type semiconductor layer 301. The N-type electrode 200 passes through the insulating layer 901 and is connected to the N-type semiconductor layer 201. The P-type electrode 300 is connected to a contact layer 903, and the contact layer 903 passes through the insulating layer 901 and is connected to the P-type semiconductor layer 301.

[0058] When the N-type electrode 200 is in an energized state, current is injected into the N-type semiconductor layer 201 to generate electrons. When the P-type electrode 300 is in an energized state, current is injected into the P-type semiconductor layer 301 to generate holes. The electrons and holes recombine in the light-emitting layer 10 to generate radiative photons.

[0059] Similar to the principle of the traditional laser diode, the traditional resonant cavity light-emitting diode also only has one light-emitting layer 10, with a relatively low light output efficiency and a relatively high light-emitting threshold current. When preparing a multi-wavelength resonant cavity light-emitting diode, multiple resonant cavity light-emitting diodes also need to be used in cooperation to obtain it. The multi-wavelength resonant cavity light-emitting diode also has problems of complex structure, relatively large assembly difficulty, relatively large volume, and relatively high cost.

[0060] The diode light-emitting device, laser light-emitting device, and resonant cavity light-emitting device provided by the present application form a resonant cavity by arranging a mirror 100 in the diode light-emitting device, allowing the light emitted by the light-emitting recombination layer to be reflected multiple times. The resonant cavity reflects 100% of the light of the wavelength that does not need to be emitted, preventing the central photons from overflowing, and thus can improve the external quantum efficiency (EQE) of the diode light-emitting device. By arranging a first light-emitting layer 400 and a second light-emitting layer 500 in the light-emitting recombination layer, the light emitted by the first light-emitting layer 400 can excite the second light-emitting layer 500 to emit light. The first light-emitting layer 400 is used to form a pumping area and a functional area, and the second light-emitting layer 500 is used to form a functional area. This functional area can be the gain area, color conversion area, beam shaping area, and spectral half-width modulation area of the laser light-emitting device, or can be the color conversion area, beam shaping area, and spectral half-width modulation area of the resonant cavity light-emitting device. By separating the pumping area and the functional area into two light-emitting layers 10, the short-wavelength light of the first light-emitting layer 400 excites the long-wavelength light of the second light-emitting layer 500, that is, the high-energy light of the first light-emitting layer 400 excites the low-energy light of the second light-emitting layer 500, enabling efficient photoluminescence and efficient electroluminescence to be achieved in different regions respectively, thereby improving the light-emitting efficiency and EQE of the diode light-emitting device and reducing the threshold current of light emission.

[0061] Based on the fact that the first light-emitting layer 400 emits short-wavelength light and has high EQE and light-emitting efficiency itself. And during the preparation process, the second light-emitting layer 500 is epitaxially grown first, and then the first light-emitting layer 400 is epitaxially grown. The distance between the first light-emitting layer 400 and the second light-emitting layer 500 is relatively close, and the second light-emitting layer 500 can release stress in advance, thereby reducing the crystal defect density of the first light-emitting layer 400. Compared with the traditional short-wavelength light-emitting layer 10, the EQE of the present application is higher. Due to the high EQE of the first light-emitting layer 400 as the pumping area, the diode light-emitting device can also have a high EQE, and the threshold current is relatively extremely low.

[0062] Moreover, the structure of the diode light-emitting device of the present application is relatively simple, the process difficulty is low, the reliability is high, and the cost is low. When this diode light-emitting device is applied to a laser light-emitting device, it can improve the light output efficiency of the laser. When this laser light-emitting device is used for laser display, it can also improve the resolution. When this diode light-emitting device is applied to a resonant cavity light-emitting device, it can also improve the light output efficiency and enhance the light output performance.

[0063] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions in the embodiments of this application will be described in more detail below with reference to the accompanying drawings in the preferred embodiments of this application. In the drawings, the same or similar reference numerals denote the same or similar components or components with the same or similar functions from beginning to end. The described embodiments are some, but not all, of the embodiments of this application. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to explain this application and should not be construed as limiting this application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in this application without creative efforts fall within the scope of protection of this application. The embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0064] In a first aspect, an embodiment of this application provides a diode light-emitting device. Referring to Figure 5 and Figure 6 as shown, the diode light-emitting device includes a mirror 100 and a light-emitting composite layer. The light-emitting composite layer includes an N-type electrode 200, a P-type electrode 300, a first light-emitting layer 400, and a second light-emitting layer 500.

[0065] In some embodiments of the diode light-emitting device, the mirror 100 can form a resonant cavity. The mirror 100 can include a first mirror 101 and a second mirror 102 that are oppositely arranged, and the resonant cavity is formed between the first mirror 101 and the second mirror 102.

[0066] The mirror 100 can be a metal coating, a semiconductor thin-film coating, or a dielectric thin-film material coating, etc., to meet the requirements of different light-transmitting wavelengths. The resonant cavity formed by the mirror 100 can reflect the light generated by the light-emitting composite layer multiple times. When the light passes through the gain region, color conversion will occur, and at the same time, the light intensity will be amplified. The mirror 100 can also adjust the divergence angle, beam shape, and beam half-width of the light, thereby improving the quality of the emitted beam.

[0067] Exemplarily, the mirror 100 can be a DBR (multiple dielectric film gratings). The DBR can be a fully nitride DBR structure, a hybrid DBR structure, and a fully dielectric film DBR structure.

[0068] Among them, the fully nitride DBR structure: The mirror 100 can be an epitaxially grown nitride. According to different wavelengths, appropriate materials, appropriate thicknesses, and appropriate periods are selected. For example, AlInN / GaN is selected, with 5-50 pairs of periods.

[0069] The fully dielectric film DBR structure: The mirror 100 can be a dielectric film, usually an oxide, such as SiO 2 、HfO 2 、Ti 3 O 5, Ta 2 O 5 , TiO 2 , ZrO 2 etc. A dielectric film is obtained by periodically overlapping high and low refractive index films. For different wavelengths, appropriate materials, appropriate thicknesses, and appropriate numbers of stacking periods are selected. For example: SiO 2 / TiO 2 , SiO 2 / Ta 2 O 5 , HfO 2 / SiO 2 , SiO 2 / ZrO 2 , and the number of periods is 5 - 50 pairs.

[0070] Hybrid DBR structure: The first mirror 101 can be a nitride, and the second mirror 102 can be a dielectric film.

[0071] In the embodiments of the present application, the first mirror 101 is a total reflection mirror, the second mirror 102 is a partial reflection mirror, and the second mirror 102 is disposed on the light-emitting side of the diode light-emitting device.

[0072] As an implementable embodiment, referring to Figure 5 shown, in combination with Figure 9 , 11 , 13, and 15, along the stacking direction parallel to the first light-emitting layer 400 and the second light-emitting layer 500, the first mirror 101 and the second mirror 102 are respectively disposed on opposite sides of the light-emitting composite layer. The diode light-emitting device is of a surface-emitting form. The arrows in the figure show the light-emitting direction.

[0073] As another implementable embodiment, referring to Figure 6 shown, in combination with Figure 10 , 12 , 14, and 16, along the stacking direction perpendicular to the first light-emitting layer 400 and the second light-emitting layer 500, the first mirror 101 and the second mirror 102 are respectively disposed on opposite sides of the light-emitting composite layer. The diode light-emitting device is of an edge-emitting form. The arrows in the figure show the light-emitting direction. It should be noted that the light-emitting position corresponds to the light-emitting layer of the wavelength light to be emitted. For example, as Figure 12 shown, when the wavelength light to be emitted is the emission wavelength of the first second light-emitting layer 500(m + 1), the emitted light indicated by the arrow corresponds to the position of the first second light-emitting layer 500(m + 1). Of course, when the wavelength light to be emitted is the emission wavelength of the second second light-emitting layer 500(m + 2), the position of the arrow can correspond to the position of the second second light-emitting layer 500(m + 2).

[0074] In the embodiment of the present application, the number of wavelengths of the light transmitted by the second mirror 102 is greater than or equal to 1, and is the same as the wavelength of the light emitted by the diode light-emitting device. The second mirror 102 is disposed on the light-emitting side of the diode light-emitting device, and the number of wavelengths and the wavelength values of the light transmitted by the second mirror 102 are equal to the number of wavelengths and the wavelength values of the light emitted by the diode light-emitting device, that is, the second mirror 102 partially reflects the wavelength light that needs to be emitted and totally reflects the wavelength light that does not need to be emitted. The partial reflectivity can be 99.9%, 99%, 90% or other reflectivity.

[0075] Referring to Figure 7 、 Figure 8 and Figure 25 As shown, in the edge-emitting diode light-emitting device, a third mirror 103 is further included. The third mirror 103 is located on the side of the second mirror 102 away from the light-emitting composite layer; with respect to the stacking direction of the first light-emitting layer 400 and the second light-emitting layer 500, the light reflection angle of the third mirror 103 is 45°.

[0076] It should be noted that the third mirror 103 can change the emission angle of the received light, reflect the light emitted from the side of the diode light-emitting device (i.e., the side perpendicular to the stacking direction of the light-emitting composite layer) to the light emitted from the end face of the diode light-emitting device (i.e., the side of the stacking direction of the light-emitting composite layer), thereby adjusting the light-emitting position of the diode light-emitting device. In this way, on the basis of the structure of the edge-emitting diode light-emitting device, a surface-emitting diode light-emitting device can be formed by adding a 45° third mirror 103.

[0077] Exemplarily, Figure 7 in, the third mirror 103 is tilted upward by 45° with respect to the stacking direction of the first light-emitting layer 400 and the second light-emitting layer 500, and the light-emitting direction of the diode light-emitting device is upward along the stacking direction of the first light-emitting layer 400 and the second light-emitting layer 500, forming a surface-emitting structure.

[0078] Exemplarily, Figure 8 in, the third mirror 103 is tilted downward by 45° with respect to the stacking direction of the first light-emitting layer 400 and the second light-emitting layer 500, and the light-emitting direction of the diode light-emitting device is downward along the stacking direction of the first light-emitting layer 400 and the second light-emitting layer 500, forming a surface-emitting structure.

[0079] Exemplarily, Figure 25 in, along the direction perpendicular to the stacking direction of the first light-emitting layer 400 and the second light-emitting layer 500, the third mirror 103 is disposed on the side of the second mirror 102 away from the corresponding light-emitting unit 700, and the light-emitting position is as shown by the arrow in the figure, on the end face of the diode light-emitting device (i.e., the side of the stacking direction of the light-emitting composite layer), forming a surface-emitting structure.

[0080] Continuing to refer to Figure 5 and Figure 6 As shown, in the light-emitting diode device provided by the embodiment of the present application, the light-emitting recombination layer is located in the resonant cavity. The N-type electrode 200 and the P-type electrode 300 of the light-emitting recombination layer are not shown in the figure. In the energized state, electrons and holes can be generated by exciting the N-type semiconductor layer and the P-type semiconductor layer.

[0081] The first light-emitting layer 400 in the light-emitting recombination layer is used to emit light with at least one wavelength, forming a pump region and a functional region. The second light-emitting layer 500 in the light-emitting recombination layer is used to emit light with at least one wavelength, forming a functional region. Among them, the functional region can be a gain region, a color conversion region, a beam shaping region, and a spectral half-width modulation region, and this diode light-emitting device is used as a laser diode. The functional region can also be a color conversion region, a beam shaping region, and a spectral half-width modulation region, and this diode light-emitting device is used as a diode light-emitting device.

[0082] The first light-emitting layer 400 is stacked on the side of the second light-emitting layer 500 close to the P-type electrode 300. At least one wavelength of the light emitted by the first light-emitting layer 400 is less than or equal to the wavelength of the light emitted by the second light-emitting layer 500, and is used to excite the second light-emitting layer 500 to emit light. When the N-type electrode 200 and the P-type electrode 300 are in the energized state, the generated electrons and holes will recombine in the first light-emitting layer 400, exciting the luminescent material of the first light-emitting layer 400 to radiate photons, forming electroluminescence. At this time, the first light-emitting layer 400 serves as a pump region. The light emitted by the first light-emitting layer 400 can have one or more wavelengths, and at least one wavelength is less than the wavelength of the light emitted by the second light-emitting layer 500. After the second light-emitting layer 500 receives the light of this wavelength, it is excited to emit light, completing photoluminescence. The second light-emitting layer 500 serves as a functional region, that is, a gain region, a color conversion region, a beam shaping region, and a spectral half-width modulation region. In some embodiments, after the first light-emitting layer 400 receives the light reflected by the mirror 100, it is re-excited to emit light, and the first light-emitting layer 400 can also serve as a gain region, a color conversion region, a beam shaping region, and a spectral half-width modulation region.

[0083] The number of wavelengths of the light emitted by the diode light-emitting device according to the embodiment of the present application is greater than or equal to 1. It can be understood that the first light-emitting layer 400 can emit light of one wavelength, and the second light-emitting layer 500 has the same wavelength as the light emitted by the first light-emitting layer 400, and the number of wavelengths of the light emitted by this diode light-emitting device is 1.

[0084] The first light-emitting layer 400 can emit light of one wavelength, and the second light-emitting layer 500 has a different wavelength from the light emitted by the first light-emitting layer 400. The number of wavelengths of the light emitted by this diode light-emitting device after being amplified and mode-selected by the resonant cavity can be 1 or 2.

[0085] The first light-emitting layer 400 can also emit light of at least two different wavelengths. The second light-emitting layer 500 can also emit light of at least one emission wavelength under the excitation of the light emitted by the first light-emitting layer 400. The number of light wavelengths emitted by the diode light-emitting device after being repeatedly reflected by the resonant cavity is greater than or equal to 1.

[0086] The first light-emitting layer 400 can also emit light of one wavelength. The second light-emitting layer 500 can emit light of at least two emission wavelengths under the excitation of the light emitted by the first light-emitting layer 400. The number of light wavelengths emitted by the diode light-emitting device after being amplified and mode-selected by the resonant cavity is greater than or equal to 1.

[0087] The first light-emitting layer 400 can also emit at least two wavelengths of light. The second light-emitting layer 500 can emit light of at least two emission wavelengths under the excitation of the light emitted by the first light-emitting layer 400. The number of light wavelengths emitted by the diode light-emitting device after being repeatedly reflected by the resonator is greater than or equal to 1.

[0088] Exemplarily, the light emitted by the first light-emitting layer 400 includes at least one of the four bands A, B, C, and G, and each band includes c different wavelengths. The light emitted by the second light-emitting layer 500 includes at least one of the seven bands A, B, C, G, Y, R, and IR, and each band includes d different wavelengths.

[0089] Among them, the A band can include at least one of 400 - 420 nm (violet light), 320 - 400 nm (UVA ultraviolet light), 275 - 320 nm (UVB ultraviolet light), and 200 - 275 nm (UVC ultraviolet light). The B band is 420 - 480 nm; the C band is 480 - 510 nm; the G band is 510 - 565 nm; the Y band is 565 - 590 nm; the R band is 590 - 740 nm; the IR band is 740 nm - 1.7 μm. Among them, both c and d are greater than or equal to 1 and can be less than or equal to 10.

[0090] For example, in some embodiments, the first light-emitting layer 400 is a blue light-emitting layer, and the second light-emitting layer 500 is a green light-emitting layer; the light emitted by the diode light-emitting device includes green light, or a mixture of blue light and green light.

[0091] In some other embodiments, in combination with Figure 26As shown, the first light-emitting layer 400 is a blue light-emitting layer (B), the second light-emitting layer 500(1) is a red light-emitting layer (R), and the second light-emitting layer 500(2) is a green light-emitting layer (G); in the figure, it is shown that the second light-emitting layer 500(1) is disposed on the side of the second light-emitting layer 500(2) away from the first light-emitting layer (400), and the second light-emitting layer 500(1) can also be disposed on the side of the second light-emitting layer 500(2) close to the first light-emitting layer (400). On the basis of this structure, the light emitted by the diode light-emitting device includes red light (R-wavelength light), or green light (G-wavelength light), or blue light (B-wavelength light), or a mixed light of green light and red light (G+R-wavelength light), or a mixed light of blue light and red light (B+R-wavelength light), or a mixed light of blue light and green light (B+G-wavelength light), or a mixed light of blue light, green light and red light (B+G+R-wavelength light), that is, white light. The light emitted by the diode light-emitting device is not limited to the above examples.

[0092] In some other embodiments, the first light-emitting layer 400 is a blue light-emitting layer, and the second light-emitting layer 500 is a first green light-emitting layer, a second green light-emitting layer and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or blue light, or the first green light, or the second green light, or a mixed light of red light and the first green light, or a mixed light of red light and the second green light, or a mixed light of red light, the first green light and the second green light, or a mixed light of blue light and red light, or a mixed light of blue light and the first green light, or a mixed light of blue light and the second green light, or a mixed light of blue light, red light and the first green light, or a mixed light of blue light, red light and the second green light, or a mixed light of red light, the first green light, the second green light and blue light, that is, white light; the wavelengths of the first green light and the second green light are different. The light emitted by the diode light-emitting device is not limited to the above examples.

[0093] In some other embodiments, the first light-emitting layer 400 is an ultraviolet light-emitting layer, and the second light-emitting layer 500 is a blue light-emitting layer; the light emitted by the diode light-emitting device includes ultraviolet light, or blue light, or a mixed light of blue light and ultraviolet light. The light emitted by the diode light-emitting device is not limited to the above examples.

[0094] In some other embodiments, the first light-emitting layer 400 is an ultraviolet light-emitting layer, and the second light-emitting layer 500 is a green light-emitting layer and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or green light, or ultraviolet light, or a mixed light of green light and red light, or a mixed light of ultraviolet light and green light, or a mixed light of ultraviolet light and red light, or a mixed light of ultraviolet light, green light and red light, that is, white light. The light emitted by the diode light-emitting device is not limited to the above examples.

[0095] In some other embodiments, the first light-emitting layer 400 is a ultraviolet light-emitting layer, and the second light-emitting layer 500 is a first green light-emitting layer, a second green light-emitting layer, and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or the first green light, or the second green light, or ultraviolet light, or a mixed light of red light and the first green light, or a mixed light of red light and the second green light, or a mixed light of ultraviolet light and red light, or a mixed light of ultraviolet light and the first green light, or a mixed light of ultraviolet light and the second green light, or a mixed light of ultraviolet light, red light, and the first green light, or a mixed light of ultraviolet light, red light, and the second green light, or a mixed light of red light, the first green light, and the second green light, or a mixed light of red light, the first green light, the second green light, and ultraviolet light, i.e., white light; the wavelengths of the first green light and the second green light are not equal. The light emitted by the diode light-emitting device is not limited to the above examples.

[0096] In some other embodiments, the first light-emitting layer 400 is a violet light-emitting layer, and the second light-emitting layer 500 is a blue light-emitting layer; the light emitted by the diode light-emitting device includes violet light, or blue light, or a mixed light of violet light and blue light. The light emitted by the diode light-emitting device is not limited to the above examples.

[0097] In some other embodiments, the first light-emitting layer 400 is a violet light-emitting layer, and the second light-emitting layer 500 is a green light-emitting layer and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or green light, or violet light, or a mixed light of green light and red light, or a mixed light of violet light and green light, or a mixed light of violet light and red light, or a mixed light of violet light, green light, and red light, i.e., white light. The light emitted by the diode light-emitting device is not limited to the above examples.

[0098] In some other embodiments, the first light-emitting layer 400 is a violet light-emitting layer, and the second light-emitting layer 500 is a green light-emitting layer, a blue light-emitting layer, and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or blue light, or green light, or violet light, or a mixed light of red light and blue light, or a mixed light of red light and green light, or a mixed light of violet light and red light, or a mixed light of violet light and blue light, or a mixed light of violet light and green light, or a mixed light of violet light, red light, and blue light, or a mixed light of violet light, red light, and green light, or a mixed light of red light, blue light, and green light, or a mixed light of red light, blue light, green light, and violet light; the wavelengths of the first green light and the second green light are not equal. The light emitted by the diode light-emitting device is not limited to the above examples.

[0099] In the embodiments of the present application, the first light-emitting layer 400 may include a barrier layer and a well layer arranged in a stacked manner. The second light-emitting layer 500 also includes a barrier layer and a well layer arranged in a stacked manner. The first light-emitting layer 400 and the second light-emitting layer 500 may be only a stacked barrier layer and well layer (QW), or may be a periodically stacked barrier layer and well layer (MQW).

[0100] The material of the barrier layer includes III-V group semiconductor materials, such as aluminum, gallium, indium and the group-V elements nitrogen, phosphorus, arsenic, antimony and their compounds. The material of the well layer includes II-VI group semiconductor materials, such as zinc, cadmium, mercury and the group-VI elements sulfur, selenium, tellurium and their compounds. Taking the GaN laser diode as an example, the barrier layer can be GaN and the well layer can be InGaN.

[0101] For the surface-emitting diode light-emitting device according to the embodiment of the present application, by using the stacked barrier layer and well layer, the number and thickness of the stacked barrier layer and well layer can be flexibly adjusted according to the cavity length of different resonant cavities (i.e., the length between the first mirror 101 and the second mirror 102).

[0102] Compared with the traditional laser diode, the thickness of the light-emitting layer 10 cannot be set to be relatively thick. For the diode light-emitting device provided by the embodiment of the present application, on the basis of controlling the thickness of the first light-emitting layer 400, the thickness of the second light-emitting layer 500 is increased. The second light-emitting layer 500 serves as a gain region, generating more photons, so that the thickness of the diode light-emitting device of the present application can be flexibly adjusted and its light-emitting effect can be improved.

[0103] And, referring to Figure 26 As shown, for the diode light-emitting device provided by the embodiment of the present application, the second light-emitting layer 500 is first formed by epitaxial growth during preparation, and then the first light-emitting layer 400 is formed by epitaxial growth. The first light-emitting layer 400 and the second light-emitting layer 500 are relatively close. The second light-emitting layer 500 can release stress in advance, reduce the crystal defects of the first light-emitting layer 400, and contribute to improving the EQE.

[0104] Continuing to refer to Figure 5 and Figure 6 As shown, the light-emitting recombination layer includes: a P-type semiconductor layer 301 and an N-type semiconductor layer 201. The P-type semiconductor layer 301 is stacked on one side of the first light-emitting layer 400 close to the P-type electrode 300 and is connected to the P-type electrode 300; the first light-emitting layer 400 is electrically connected to the P-type electrode 300 through the P-type semiconductor layer 301.

[0105] The N-type semiconductor layer 201 is stacked on one side of the second light-emitting layer 500 close to the N-type electrode 200 and is connected to the N-type electrode 200; the second light-emitting layer 500 is electrically connected to the N-type electrode 200 through the N-type semiconductor layer 201. When the N-type electrode 200 is in an energized state, the N-type electrode 200 injects current into the N-type semiconductor layer 201 to generate electrons. When the P-type electrode 300 is in an energized state, the P-type electrode 300 injects current into the P-type semiconductor layer 301 to generate holes.

[0106] Combined with Figure 28 As shown, taking the diode light-emitting device as a laser diode as an example for illustration, referring toFigure 28 (a), when the N-type electrode 200 (not shown in the figure) and the P-type electrode 300 are in the energized state, current is passed through the N-type semiconductor layer 201 and the P-type semiconductor layer 301 to generate electrons and holes, and photons are radiated by recombination in the first light-emitting layer 400. Refer to Figure 28 (b), the photons of the first light-emitting layer 400 are emitted, exciting the second light-emitting layer 500 to generate photons. Refer to Figure 28 (c), the photons of both the first light-emitting layer 400 and the second light-emitting layer 500 are emitted and reflected in the resonant cavity. Refer to Figure 28 (d), the photons reflected by the resonant cavity re-enter the first light-emitting layer 400 and the second light-emitting layer 500. The photons of the first light-emitting layer 400 entering the second light-emitting layer 500 will again excite the second light-emitting layer 500 to emit more photons. Some of the photons of the first light-emitting layer 400 entering the first light-emitting layer 400 will also excite the first light-emitting layer 400 to emit more photons. The short-wavelength light of the first light-emitting layer 400 excites the long-wavelength light of the second light-emitting layer 500, that is, the high-energy light of the first light-emitting layer 400 excites the low-energy light of the second light-emitting layer 500. In this way, after the mode selection and amplification of the resonant cavity, the light is finally emitted. Based on the above light-emitting principle, the diode light-emitting device provided by the embodiments of the present application can improve the light-emitting efficiency, improve the EQE, and can also reduce the threshold current, and it is also easier to form multi-wavelength light through photoexcitation.

[0107] The diode light-emitting device provided by the embodiments of the present application may further include an optical waveguide structure.

[0108] Refer to Figure 15 and Figure 16 As shown, as an implementable embodiment, the optical waveguide structure may include a P-type waveguide layer 302 and an N-type waveguide layer 202. The P-type waveguide layer 302 is stacked on one side of the first light-emitting layer 400 close to the P-type semiconductor layer 301 and is connected to the P-type semiconductor layer 301; the N-type waveguide layer 202 is stacked on one side of the second light-emitting layer 500 close to the N-type semiconductor layer 201 and is connected to the N-type semiconductor layer 201.

[0109] It should be noted that the P-type waveguide layer 302 and the N-type waveguide layer 202 can be made of materials with relatively high refractive indices of light. The refractive index of light of the N-type waveguide layer 202 is n1, and the refractive index of light of the P-type waveguide layer 302 is n2. The refractive index of light of the first light-emitting layer 400 and the second light-emitting layer 500 is n3, and the refractive index of light of the P-type semiconductor layer 301 and the N-type semiconductor layer 201 is n4. Among them, n1>n3, n1>n4, n2>n3, n2>n4. The N-type waveguide layer 202 and the P-type waveguide layer 302 can perform mode selection on light and complete the efficient transmission of the light emitted by the diode light-emitting device.

[0110] Multiple holes can be provided in the N-type waveguide layer 202 and the P-type waveguide layer 302. For example, the ALAS layer is oxidized to form Al 2 O 3 aperture, or small holes are formed in SiO 2 . Alternatively, the N-type waveguide layer 202 and the P-type waveguide layer 302 are etched by ICP (Inductively Coupled Plasma) process to obtain a raised cylindrical mesa, thereby realizing the lateral confinement of the optical field.

[0111] As another implementable embodiment, the light-emitting composite layer, the mirror 100, and the gas environment in the resonant cavity act together to achieve the effect of an optical waveguide. Taking Figure 26 the shown Vertical-Cavity Surface-Emitting Laser (VCSEL) as an example, the refractive indices of the N-type semiconductor layer 201, the first light-emitting layer 400, the second light-emitting layer 500, and the P-type semiconductor layer 301 are greater than the refractive index of the gas in the resonant cavity.

[0112] In this way, the light can be confined in the vertical direction of the vertical-cavity surface-emitting laser. Moreover, patterning can be performed on the second mirror 102 to achieve the lateral control of the laser. Of course, patterning is performed on the first mirror 101 and the second mirror 102, combined with the relationship between the refractive indices of the N-type semiconductor layer 201, the first light-emitting layer 400, the second light-emitting layer 500, and the P-type semiconductor layer 301 and the refractive index of the gas in the resonant cavity, and the lateral control of the laser can also be achieved to realize the optical waveguide function.

[0113] In the diode light-emitting device of the embodiment of the present application, a hole isolation region is formed between the first light-emitting layer 400 and the second light-emitting layer 500. The hole isolation region can block the holes generated in the P-type semiconductor layer 301 from migrating to the second light-emitting layer 500, so that the holes only exist in the first light-emitting layer 400.

[0114] As an implementable embodiment, referring to Figure 11 and Figure 12 shown, there are m first light-emitting layers 400, where m is a positive integer greater than or equal to 1. When m is greater than or equal to 2, the m first light-emitting layers 400 are stacked; the wavelength of the light emitted by at least one first light-emitting layer 400 is less than or equal to the wavelength of the light emitted by the second light-emitting layer 500 and is used to excite the second light-emitting layer 500 to emit light.

[0115] Specifically, along the direction from the P-type electrode 300 to the N-type electrode 200, the first first light-emitting layer 400(1), the second first light-emitting layer 400(2),..., the (m - 1)-th first light-emitting layer 400(m - 1), and the m-th first light-emitting layer 400(m) are sequentially stacked. The m first light-emitting layers 400 can emit light of the same wavelength, or light of different wavelengths, or, for some of the first light-emitting layers 400, the emission wavelengths are the same.

[0116] The sum of the thicknesses of the m first light-emitting layers 400 is greater than or equal to the hole diffusion length generated by the P-type semiconductor layer 301; the sum of the thicknesses of the first first light-emitting layer 400(1), the second first light-emitting layer 400(2),..., and the (m - 1)-th first light-emitting layer 400(m - 1) is less than the hole diffusion length generated by the P-type semiconductor layer 301; the first first light-emitting layer 400(1), the second first light-emitting layer 400(2),..., and the (m - 1)-th first light-emitting layer 400(m - 1) together form a hole isolation region of the second light-emitting layer 500.

[0117] Exemplarily, when m is 1, the thickness of the first light-emitting layer 400 is greater than or equal to the hole diffusion length generated by the P-type semiconductor layer 301. Exemplarily, when m is 3, the sum of the thicknesses of the first first light-emitting layer 400 and the second first light-emitting layer 400 is less than the hole diffusion length generated by the P-type semiconductor layer 301, and the sum of the thicknesses of the first first light-emitting layer 400(1), the second first light-emitting layer 400(2), and the third first light-emitting layer 400 is greater than or equal to the hole diffusion length generated by the P-type semiconductor layer 301.

[0118] In this way, the holes generated by the P-type semiconductor layer 301 are limited by the hole diffusion length and can only migrate and be distributed in the first light-emitting layer 400. There is recombination of electrons and holes in the first light-emitting layer 400, and electroluminescence is completed. The holes cannot migrate and be distributed in the second light-emitting layer 500. Only electrons exist in the second light-emitting layer 500, and there is no recombination of electrons and holes. Only photoluminescence can be completed.

[0119] As an implementable embodiment, continue to refer to Figures 11 to 16 As shown, there are n second light-emitting layers 500, where n is a positive integer greater than or equal to 1. When n is greater than or equal to 2, the n second light-emitting layers 500 are all stacked.

[0120] The n second light-emitting layers 500 can emit light of the same wavelength, or can emit light of different wavelengths, or, the light-emitting wavelengths of some of the second light-emitting layers 500 are the same. The n second light-emitting layers 500 include the first second light-emitting layer 500(m + 1), the second second light-emitting layer 500(m + 2), and the nth second light-emitting layer 500(a). Where a is the sum of the numbers of m and n, that is, the diode light-emitting device has a light-emitting layers.

[0121] Based on the above settings, in some embodiments, the wavelengths of the light emitted by the diode light-emitting device include the wavelengths of all the first light-emitting layers 400 and the second light-emitting layers 500.

[0122] In some other embodiments, the wavelengths of the light emitted by the diode light-emitting device include the wavelengths of all the second light-emitting layers 500. In some other embodiments, the wavelengths of the light emitted by the diode light-emitting device include the wavelengths of all the first light-emitting layers 400. In some other embodiments, the wavelengths of the light emitted by the diode light-emitting device include the wavelengths of at least some of the first light-emitting layers 400. In some other embodiments, the wavelengths of the light emitted by the diode light-emitting device include the wavelengths of at least some of the second light-emitting layers 500. In some other embodiments, the wavelengths of the light emitted by the diode light-emitting device include the wavelengths of at least some of the first light-emitting layers 400 and the wavelengths of at least some of the second light-emitting layers 500.

[0123] For example, Figure 11 taking the vertical-cavity surface-emitting laser shown as an example, it may include 1 first light-emitting layer 400 and 3 second light-emitting layers 500. The wavelength of the first light-emitting layer 400 is 430 nm, and the wavelengths of the 3 second light-emitting layers 500 are 450 nm, 530 nm, and 620 nm respectively. The vertical-cavity surface-emitting laser emits white light laser that is highly coincident in the vertical emission direction. The white light laser includes a mixed light of three wavelengths of 450 nm, 530 nm, and 620 nm, or only emits light of the wavelength of 620 nm, or emits a mixed light of two wavelengths of 530 nm and 620 nm, or emits a mixed light of four wavelengths of 430 nm, 450 nm, 530 nm, and 620 nm, or a mixed light of other combinations.

[0124] Exemplarily, the first mirror 101 of the laser diode is a total reflection mirror and reflects light of all wavelengths. The second mirror 102 is a partial reflection mirror. When the second mirror 102 totally reflects the light of the wavelength of 620 nm and partially reflects the mixed light of the three wavelengths of 450 nm, 530 nm, and 430 nm, the laser diode emits 450 nm,

[0125] White laser light mixed with three wavelengths of 620 nm, 530 nm, and 430 nm. When the second reflector 102 totally reflects light of other wavelengths and partially reflects light of the 620-nm wavelength, the laser diode emits laser light of the 620-nm wavelength; when the second reflector 102 totally reflects light of other wavelengths and partially reflects the mixed light of the 530-nm and 620-nm wavelengths, the laser diode emits laser light mixed with the 530-nm and 620-nm wavelengths; when the second reflector 102 partially reflects the mixed light of the four wavelengths of 430 nm, 450 nm, 530 nm, and 620 nm, the laser diode emits laser light mixed with the four wavelengths of 430 nm, 450 nm, 530 nm, and 620 nm.

[0126] In this way, by adjusting the number and emission wavelengths of the first light-emitting layer 400 and the second light-emitting layer 500, as well as the design of the partial reflector, a multi-wavelength diode light-emitting device can be realized. The structure of the diode light-emitting device provided by the embodiments of the present application for realizing multi-wavelength light is relatively simple, and the wavelength form is richer, which can meet various light-emitting requirements.

[0127] As another implementable embodiment, the light-emitting composite layer includes: a hole isolation layer, which is stacked between the first light-emitting layer 400 and the second light-emitting layer 500; the hole isolation layer forms a hole isolation region between the first light-emitting layer 400 and the second light-emitting layer 500.

[0128] It should be noted that the hole isolation layer can be made of materials with a relatively high hole injection barrier and a relatively low electron injection barrier, such as organic small molecules and polymers, such as BAlq (bis(2-methyl-8-quinolinolato)aluminum), TPBi (2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)), and also such as silicon-doped GaN, etc.

[0129] Among them, the sum of the thicknesses of the m first light-emitting layers 400 and the hole isolation layer is greater than or equal to the hole diffusion length of the P-type semiconductor layer; the sum of the thicknesses of the first first light-emitting layer 400, the second first light-emitting layer 400... and the (m - 1)th first light-emitting layer 400 is less than the hole diffusion length of the P-type electrode 300.

[0130] Exemplarily, when m is 1, the sum of the thicknesses of the first light-emitting layer 400 and the hole isolation layer is greater than or equal to the hole diffusion length generated by the P-type semiconductor layer 301. Exemplarily, when m is 3, the sum of the thicknesses of the first first light-emitting layer 400(1) and the second first light-emitting layer 400(2) is less than the hole diffusion length generated by the P-type semiconductor layer 301, and the sum of the thicknesses of the first first light-emitting layer 400(1), the second first light-emitting layer 400(2), the third first light-emitting layer 400(3) and the hole isolation layer is greater than or equal to the hole diffusion length generated by the P-type semiconductor layer 301.

[0131] In this way, the holes generated by the P-type semiconductor layer 301 are limited by the hole diffusion length and can only migrate and be distributed in the first light-emitting layer 400. There is recombination of electrons and holes in the first light-emitting layer 400, and electroluminescence is completed. The holes cannot migrate and be distributed in the second light-emitting layer 500. Only electrons exist in the second light-emitting layer 500, and there is no recombination of electrons and holes, and only photoluminescence can be completed.

[0132] The diode light-emitting device provided by the embodiment of the present application may further include a plurality of light-emitting units 700. The structure of the plurality of light-emitting units 700 will be described in detail below.

[0133] Referring to Figures 17 to 25 As shown, the light-emitting layer 10 is divided into y light-emitting units 700, such as light-emitting unit 700(1), light-emitting unit 700(2), light-emitting unit 700(3), light-emitting unit 700(4)... light-emitting unit 700(y), where y is a positive integer greater than or equal to 1; when y is greater than 1, along the direction perpendicular to the P-type semiconductor layer 301 to the N-type semiconductor layer 201, the y light-emitting units 700 are arranged at intervals. The diode light-emitting device may further include y resonant cavities, and the y light-emitting units 700 may be correspondingly located in the y resonant cavities. Exemplarily, one light-emitting unit 700 may be correspondingly located in one resonant cavity, or at least two light-emitting units 700 are correspondingly located in one resonant cavity.

[0134] The y light-emitting units 700 may share the same N-type electrode 200 and P-type electrode 300 to achieve synchronous driving. The y light-emitting units 700 may also share the same N-type electrode 200 and use multiple different P-type electrodes 300; or, the y light-emitting units 700 may also share the same P-type electrode 300 and use multiple different N-type electrodes 200 to achieve independent driving.

[0135] The wavelengths of the light emitted by the y light-emitting units 700 are all equal, and the number of wavelengths of the light emitted by the diode light-emitting device is 1; or, among the y light-emitting units 700, at least two emit lights with different wavelengths, and the number of wavelengths of the light emitted by the diode light-emitting device is greater than or equal to 2. It can be understood that multiple light-emitting units 700 can emit light of the same wavelength, or can emit lights of different wavelengths, or, a part of the light-emitting units 700 can emit light of the same wavelength.

[0136] The diode light-emitting device further includes an isolation structure 800, and the isolation structure 800 is located between any two adjacent light-emitting units 700; the isolation structure 800 includes a channel; or, the isolation structure 800 includes a channel and an isolation material disposed in the channel; or, the isolation structure 800 is an ion implantation layer.

[0137] It should be noted that in some embodiments, referring to Figures 17 to 19 , and Figure 21 and Figure 23 as shown, the isolation structure 800 may only include a channel (abbreviated as CN for Channel), that is, the channel may not be filled with an isolation material. The channel can spatially isolate the multiple light-emitting units 700. Referring to Figure 20 and Figure 24 as shown, the channel CN is filled with an electrically insulating isolation material, such as silicon nitride or silicon oxide. In some embodiments, the electrically insulating isolation material may also have a light-shielding effect, such as a black organic material, etc., so that the mixing of light between adjacent light-emitting units 700 can be reduced or avoided, and the light-emitting effect of the diode light-emitting device can be improved. In other embodiments, the isolation structure 800 may also be an ion implantation layer, a structure having an electrical isolation effect and a light-blocking effect formed by an ion implantation process.

[0138] For example, a diode light-emitting device, as a laser diode, includes 3 laser spots, that is, it includes 3 light-emitting units 700. Each light-emitting unit 700 includes 1 first light-emitting layer 400 and 3 second light-emitting layers 500. There are 2 isolation structures 800 between the 3 light-emitting units 700. Each light-emitting unit 700 has 1 resonant cavity, that is, a first reflector 101 and a second reflector 102. The emission wavelength of the first light-emitting layer 400 is 430 nm, and the emission wavelengths of the 3 second light-emitting layers 500 are 465 nm, 535 nm, and 620 nm respectively. Among them, the 3 light-emitting units 700 can all be independently driven. The first reflectors 101 corresponding to the 3 light-emitting units 700 are all total reflectors for 4 wavelengths. The second reflector 102 corresponding to the light-emitting unit 700(1) is a total reflector for 430 nm, 535 nm, and 620 nm, and is a partial reflector for 465 nm. The light-emitting unit 700 emits laser light of 465 nm. The second reflector 102 corresponding to the light-emitting unit 700(2) is a partial reflector for 535 nm and a total reflector for the other 3 wavelengths. The light-emitting unit 700(2) emits laser light of 535 nm. The second reflector 102 corresponding to the light-emitting unit 700(3) is a partial reflector for 620 nm and a total reflector for the other 3 wavelengths. The light-emitting unit 700(3) emits laser light of 620 nm. This laser diode can be directly used in a laser TV. One laser diode chip can be 1 pixel unit, and it has a relatively high EQE and luminous efficiency.

[0139] For another example, a diode light-emitting device also serves as a laser diode and includes 6 laser points, that is, 6 light-emitting units 700. Each light-emitting unit 700 includes 1 first light-emitting layer 400 and 3 second light-emitting layers 500. There are 5 isolation structures 800 between the 6 light-emitting units 700. Each light-emitting unit 700 has 1 resonant cavity, that is, a first mirror 101 and a second mirror 102. The wavelength of the first light-emitting layer 400 is 430 nm, and the 3 second light-emitting layers 500 are 465 nm, 535 nm, and 620 nm respectively. Among them, the 6 light-emitting units 700 can all be independently driven, and the first mirrors 101 corresponding to the 6 light-emitting units 700 are all-reflective for 4 wavelengths. The second mirrors 102 corresponding to the light-emitting unit 700(1) and the light-emitting unit 700(2) are all-reflective for 430 nm, 535 nm, and 620 nm and partially reflective for 465 nm. The light-emitting unit 700 and the light-emitting unit 700(2) emit 465-nm laser light; the second mirrors 102 corresponding to the light-emitting unit 700(3) and the light-emitting unit 700(4) are partially reflective for 535 nm and all-reflective for the other 3 wavelengths. The light-emitting unit 700(3) and the light-emitting unit 700(4) emit 535-nm laser light; the second mirrors 102 corresponding to the light-emitting unit 700(5) and the light-emitting unit 700(6) are partially reflective for 620 nm and all-reflective for the other 3 wavelengths. The light-emitting unit 700(5) and the light-emitting unit 700(6) emit 620-nm laser light. This laser diode can be directly applied to a laser TV. One laser diode chip can serve 2 pixel units and also has a relatively high EQE and luminous efficiency.

[0140] Next, with reference to Figures 17 to 20 shown in the figure, taking the example where multiple light-emitting units 700 share a P-type electrode 300 and use multiple different N-type electrodes 200 separately for illustration.

[0141] The N-type semiconductor layer 201 includes y sub-N-type semiconductor layers that are separated from each other; on the side of the y light-emitting units 700 close to the P-type semiconductor layer 301, they are in contact conduction with the P-type semiconductor layer 301. On the side of the y light-emitting units 700 close to the N-type semiconductor layer 201, they are in contact conduction with the y sub-N-type semiconductor layers in a one-to-one correspondence; the N-type electrode 200 includes y sub-N-type electrodes that are separated from each other, and the y sub-N-type electrodes are connected to the y sub-N-type semiconductor layers in a one-to-one correspondence.

[0142] It should be noted that when the P-type electrode 300 is in the energized state, by separately controlling the energized states of the y sub-N-type electrodes, the separate control of the y light-emitting units 700 can be achieved, so as to realize the light emission of all the light-emitting units 700 or the light emission of a partial number of the light-emitting units 700.

[0143] With reference to Figure 18As shown, at least a part of the isolation structure 800 extends into the P-type semiconductor layer 301; Refer to Figure 19 As shown, at least a part of the isolation structure 800 penetrates or extends to the mirror 100 near the N-type semiconductor layer 201. In this way, the spatial isolation effect, electrical isolation effect and light-blocking effect of the isolation structure 800 can be improved.

[0144] Next, refer to Figures 21 to 24 As shown, taking the example that multiple light-emitting units 700 share the N-type electrode 200 and use multiple different P-type electrodes 300 separately for illustration.

[0145] The P-type semiconductor layer 301 includes y sub-P-type semiconductor layers that are separated from each other; On the side of the y light-emitting units 700 close to the N-type semiconductor layer 201, they are in contact conduction with the N-type semiconductor layer 201. The y light-emitting units 700 are close to the P-type semiconductor layer 301 and are in contact conduction with the y sub-P-type semiconductor layers one by one; The P-type electrode 300 includes y sub-P-type electrodes that are separated from each other, and the y sub-P-type electrodes are connected to the y sub-P-type semiconductor layers one by one.

[0146] It should be noted that when the N-type electrode 200 is in the energized state, by separately controlling the energized states of the y sub-P-type electrodes, the y light-emitting units 700 can be separately controlled to realize the light emission of all the light-emitting units 700 or the light emission of a partial number of the light-emitting units 700.

[0147] Refer to Figure 22 As shown, at least a part of the isolation structure 800 extends into the N-type semiconductor layer 201; Refer to Figure 23 As shown, at least a part of the isolation structure 800 penetrates or extends to the mirror 100 near the P-type semiconductor layer 301. In this way, the spatial isolation effect, electrical isolation effect and light-blocking effect of the isolation structure 800 can be improved.

[0148] Among the above-mentioned multiple light-emitting units 700, the mirror 100 can also be adjusted to be multiple. Specifically, when the first mirror 101 and the second mirror 102 are arranged on opposite sides of the light-emitting composite layer along the stacking direction parallel to the first light-emitting layer 400 and the second light-emitting layer 500, there are y second mirrors 102. For example, the second mirror 102(1), the second mirror 102(2), the second mirror 102(3), the second mirror 102(4)... the second mirror 102(y). The y second mirrors 102 are arranged at intervals and are arranged on the light-emitting sides of the respective light-emitting units 700 one by one; The number of wavelengths of the light transmitted by each second mirror 102 is greater than or equal to 1, and the wavelengths of the light emitted by the corresponding light-emitting units 700 are the same. In this way, the wavelength of the light transmitted by the second mirror 102 can better adjust the light-emitting wavelength of the light-emitting unit 700 so that the emitted light of the diode light-emitting device is consistent with the required one.

[0149] It should be noted that Figures 17 to 24 the y light-emitting units 700 of the shown diode light-emitting device are all surface-emitting structures. Figure 25 The y light-emitting units 700 of the shown diode light-emitting device are edge-emitting structures. On both sides of each light-emitting unit 700 in the stacking direction perpendicular to the light-emitting recombination layer, a first reflector 101 and a second reflector 102 are provided, and a third reflector 103 is provided on the side of each second reflector 102 facing away from the corresponding light-emitting unit 700. In this way, Figure 25 the light-emitting position of the shown edge-emitting light-emitting unit 700 can be located at the end face of the diode light-emitting device (one side in the stacking direction of the light-emitting recombination layer, that is, the upper end face shown by the arrow in the figure).

[0150] In some other embodiments, referring to Figure 25 as shown, when the first reflector 101 and the second reflector 102 are arranged on opposite sides of the light-emitting recombination layer in the stacking direction perpendicular to the first light-emitting layer 400 and the second light-emitting layer 500 and there is a third reflector 103, the diode light-emitting device has y resonant cavities, y first reflectors 101, y second reflectors 102, and y third reflectors 103. The number of wavelengths of the light transmitted by each second reflector 102 is greater than or equal to 1 and is the same as the wavelength of the light emitted by the corresponding light-emitting unit 700.

[0151] Referring to Figure 26 as shown, the diode light-emitting device further includes a substrate 900, and the light-emitting recombination layer is disposed on the substrate 900; the material of the substrate 900 includes at least one of sapphire, silicon-based, gallium nitride, silicon carbide, alumina, quartz, and gallium oxide.

[0152] It should be noted that the substrate 900 can be disposed in the resonant cavity, and the substrate 900 can provide a support basis for the light-emitting recombination layer. The substrate 900 can be located on the N-type electrode 200, and an N-type semiconductor layer 201 and an N-type waveguide layer 202 are formed above the substrate 900. The second light-emitting layer 500 and the first light-emitting layer 400 can be sequentially disposed above the N-type waveguide layer 202. An oxide layer 904 and a P-type waveguide layer 302 are disposed above the first light-emitting layer 400. A P-type semiconductor layer 301 and an insulating layer 901 can be formed above the P-type waveguide layer 302. A P-type electrode 300 is disposed above the P-type semiconductor layer 301.

[0153] Figure 26 and Figure 27 respectively show a relatively complete structural diagram of a surface-emitting diode light-emitting device and an edge-emitting diode light-emitting device. Figure 26 is a schematic structural diagram of a surface-emitting diode light-emitting device, Figure 27 is a schematic structural diagram of an edge-emitting diode light-emitting device.

[0154] Figure 26 In this case, the first reflector 101 of the surface-emitting structure diode light-emitting device is disposed on the substrate 900, and the second reflector 102 is disposed on the P-type semiconductor layer 301. The N-type electrode 200 is connected to the N-type semiconductor layer 201. An insulating layer 901 is disposed on the second reflector 102, and the P-type electrode 300 passes through the insulating layer 901 and the second reflector 102 to be connected to the P-type semiconductor layer 301.

[0155] Figure 27 In this case, the first reflector 101 and the second reflector 102 of the edge-emitting structure diode light-emitting device are disposed on opposite sides of the light-emitting recombination layer perpendicular to the stacking direction. The N-type electrode 200 is disposed at the bottom of the substrate 900 and is connected to the N-type semiconductor layer 201. The P-type electrode 300 is disposed on the top of the insulating layer 901 and is connected to the P-type semiconductor layer 301. Among them, an electron confinement layer 902 may further be disposed between the P-type waveguide layer 302 and the P-type semiconductor layer 301.

[0156] In a second aspect, an embodiment of the present application provides a laser light-emitting device including the above-mentioned diode light-emitting device. In an alternative embodiment, the laser light-emitting device is at least one of the following: a laser chip, an array laser, a laser chip set, a laser direct display, a laser projection, an infrared laser, and a visible light laser.

[0157] Among them, the laser light-emitting device can directly obtain the required mixed laser, such as white light laser, from a single multi-wavelength diode light-emitting device chip, and then perform other required applications.

[0158] When applied to an array laser, it can be arrayed on a pre-fabricated epitaxial wafer through processes such as photolithography, divided into one or more arrays according to needs, and then an array laser is obtained through packaging. The shape and size of a single laser light-emitting device, as well as the number and arrangement shape of EP semiconductor laser devices, can be flexibly adjusted according to different requirements. Multiple diode light-emitting device chips can also be arranged on the same substrate, and then connected in series or in parallel, and then an array laser is obtained through packaging. They can be the same diode light-emitting device chips or different diode light-emitting device chips, such as RG+BG, to obtain an array white light laser. The shape and size of a single laser light-emitting device, as well as the number and arrangement shape, can be flexibly adjusted according to different requirements.

[0159] When applied to a laser chip set, two or more diode light-emitting device chips are combined with a circuit board to form a chip set, and then combined with a driving backplane, etc. according to the application to obtain a laser.

[0160] In a third aspect, an embodiment of the present application provides a resonant cavity light-emitting device, including the above-mentioned diode light-emitting device. In an optional embodiment, the resonant cavity light-emitting device includes at least one of the following: a resonant cavity light-emitting diode chip, a resonant cavity light-emitting diode chip group, a communication light source, an illumination light source, a display, and a medical beauty light source.

[0161] The laser light-emitting device and the resonant cavity light-emitting device of the embodiments of the present application are based on the above-mentioned diode light-emitting device, and thus have the same or corresponding technical effects as those above, which will not be elaborated here.

[0162] In the description of the embodiments of the present application, it should be understood that, unless otherwise clearly specified and limited, the terms "mounted", "connected", and "coupled" should be understood in a broad sense. For example, it may be a fixed connection, or an indirect connection through an intermediate medium, or the internal communication of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific situations. The orientation or positional relationship indicated by the terms "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present application. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specifically and precisely defined.

[0163] The terms "first", "second", "third", "fourth", etc. (if any) in the description, claims, and drawings of the present application are used to distinguish similar objects, and do not necessarily need to describe a specific order or sequence. It should be understood that such used data can be interchanged under appropriate circumstances, so that the embodiments of the present application described here can be implemented in an order different from those illustrated or described here. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units does not necessarily need to be limited to those clearly listed steps or units, but may include other steps or units not clearly listed or inherent to these processes, methods, products, or devices.

[0164] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than limiting them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A diode light emitting device, characterized in that: include: A reflector (100), wherein the reflector (100) forms a resonant cavity; A light-emitting composite layer, wherein the light-emitting composite layer is located in the resonant cavity; The light-emitting composite layer comprises: N-type electrode (200); P-type electrode (300); A first light-emitting layer (400), used to emit light having at least one wavelength, forming a pumping region and a functional region; A second light-emitting layer (500), configured to emit light having at least one wavelength, and forming a functional area; The first light-emitting layer (400) is stacked on a side of the second light-emitting layer (500) close to the P-type electrode (300), and at least one wavelength of light emitted by the first light-emitting layer (400) is less than or equal to the wavelength of light emitted by the second light-emitting layer (500), and is used to excite the second light-emitting layer (500) to emit light; The number of wavelengths of light emitted by the diode light emitting device is greater than or equal to 1.

2. The diode light emitting device according to claim 1, characterized in that: The light-emitting composite layer comprises: A P-type semiconductor layer (301) is stacked on a side of the first light-emitting layer (400) close to the P-type electrode (300) and connected to the P-type electrode (300); the first light-emitting layer (400) is electrically connected to the P-type electrode (300) through the P-type semiconductor layer (301); An N-type semiconductor layer (201) is stacked on a side of the second light-emitting layer (500) close to the N-type electrode (200) and connected to the N-type electrode (200); the second light-emitting layer (500) is electrically connected to the N-type electrode (200) via the N-type semiconductor layer (201).

3. The diode light emitting device according to claim 2, characterized in that: The diode light emitting device includes an optical waveguide structure.

4. The diode light emitting device according to claim 3, characterized in that: The optical waveguide structure comprises: A P-type waveguide layer (302), stacked on a side of the first light-emitting layer (400) close to the P-type semiconductor layer (301), and connected to the P-type semiconductor layer (301); The N-type waveguide layer (202) is stacked on a side of the second light-emitting layer (500) close to the N-type semiconductor layer (201) and is connected to the N-type semiconductor layer (201).

5. The diode light emitting device according to claim 4, characterized in that: The reflector (100) comprises a first reflector (101) and a second reflector (102) which are arranged opposite to each other, and the resonant cavity is formed between the first reflector (101) and the second reflector (102); The first reflector (101) is a total reflector, the second reflector (102) is a partial reflector, and the side where the second reflector (102) is located forms the light emitting side of the diode light emitting device.

6. The diode light emitting device according to claim 5, characterized in that: The number of wavelengths of light transmitted by the second reflector (102) is greater than or equal to 1 and is the same as the wavelength of light emitted by the diode light emitting device.

7. The diode light emitting device according to claim 5, characterized in that: Along a stacking direction parallel to the first light-emitting layer (400) and the second light-emitting layer (500), the first reflector (101) and the second reflector (102) are respectively arranged on opposite sides of the light-emitting composite layer.

8. The diode light emitting device according to claim 5, characterized in that: Along a stacking direction perpendicular to the first light-emitting layer (400) and the second light-emitting layer (500), the first reflector (101) and the second reflector (102) are respectively arranged on opposite sides of the light-emitting composite layer.

9. The diode light emitting device according to claim 8, characterized in that: It also includes a third reflector (103), wherein the third reflector (103) is arranged on a side of the second reflector (102) away from the light-emitting composite layer; Relative to the stacking direction of the first light-emitting layer (400) and the second light-emitting layer (500), the light reflection angle of the third reflector (103) is 45°.

10. The diode light emitting device according to any one of claims 2 to 9, characterized in that: A hole isolation region is formed between the first light-emitting layer (400) and the second light-emitting layer (500).

11. The diode light emitting device according to claim 10, characterized in that: The first light-emitting layer (400) has m pieces, where m is a positive integer greater than or equal to 1; When m is greater than or equal to 2, the m first light-emitting layers (400) are stacked; The wavelength of light emitted by at least one of the first light-emitting layers (400) is less than or equal to the wavelength of light emitted by the second light-emitting layer (500), and is used to excite the second light-emitting layer (500) to emit light.

12. The diode light emitting device according to claim 11, characterized in that: Along the direction from the P-type electrode (300) to the N-type electrode (200), the first first light-emitting layer, the second first light-emitting layer, ... and the mth first light-emitting layer are stacked in sequence; The sum of the thicknesses of the m first light-emitting layers (400) is greater than or equal to the hole diffusion length of the P-type semiconductor layer; The sum of the thicknesses of the first first light-emitting layer, the second first light-emitting layer, ... and the m-1th first light-emitting layer is smaller than the hole diffusion length of the P-type electrode (300); The first first light-emitting layer, the second first light-emitting layer, ... and the m-1th first light-emitting layer together form a hole isolation region of the second light-emitting layer (500).

13. The diode light emitting device according to claim 10, characterized in that: The second light-emitting layer (500) has n pieces, where n is a positive integer greater than or equal to 1; When n is greater than or equal to 2, n second light-emitting layers (500) are stacked.

14. The diode light emitting device according to claim 13, characterized in that: The wavelength of light emitted by the diode light emitting device includes the wavelength of all the first light emitting layers (400) and / or all the second light emitting layers (500); Alternatively, the wavelength of light emitted by the diode light emitting device includes a portion of the wavelength of the first light emitting layer (400) and / or a portion of the wavelength of the second light emitting layer (500).

15. The diode light emitting device according to claim 10, characterized in that: The light-emitting composite layer comprises: A hole isolation layer, the hole isolation layer being stacked between the first light-emitting layer (400) and the second light-emitting layer (500); The hole isolation layer forms the hole isolation region between the first light emitting layer (400) and the second light emitting layer (500).

16. The diode light emitting device according to claim 15, characterized in that: The first light-emitting layer (400) has m pieces, where m is a positive integer greater than or equal to 1; When m is greater than or equal to 2, the m first light-emitting layers (400) are stacked; The sum of the thicknesses of the m first light-emitting layers (400) and the hole isolation layers is greater than or equal to the hole diffusion length of the P-type semiconductor layer; and the sum of the thicknesses of the first first light-emitting layer (400), the second first light-emitting layer (400) ... and the m-1th first light-emitting layer (400) is less than the hole diffusion length of the P-type electrode (300).

17. The diode light emitting device according to any one of claims 7 or 9, characterized in that: The light-emitting composite layer comprises y light-emitting units (700), where y is a positive integer greater than or equal to 1; When y is greater than or equal to 2, along a direction perpendicular to the P-type semiconductor layer (301) to the N-type semiconductor layer (201), y light-emitting units (700) are arranged at intervals.

18. The diode light emitting device according to claim 17, characterized in that: The wavelengths of light emitted by the y light-emitting units (700) are all equal, and the number of wavelengths of light emitted by the diode light-emitting device is 1; Or, among the y light-emitting units (700), at least two of them emit light of different wavelengths, and the number of wavelengths of light emitted by the diode light-emitting device is greater than or equal to 2.

19. The diode light emitting device according to claim 17, characterized in that: It also includes an isolation structure (800), wherein the isolation structure (800) is located between any two adjacent light-emitting units (700); The isolation structure (800) includes a channel; or, the isolation structure (800) includes a channel and an isolation material disposed in the channel; or, the isolation structure (800) is an ion implantation layer.

20. The diode light emitting device according to claim 19, characterized in that: The N-type semiconductor layer (201) comprises y N-type semiconductor sub-layers separated from each other; The y light-emitting units (700) are close to one side of the P-type semiconductor layer (301) and are in contact and conduction with the P-type semiconductor layer (301); and the y light-emitting units (700) are close to the N-type semiconductor layer (201) and are in contact and conduction with the y sub-N-type semiconductor layers in a one-to-one correspondence; The N-type electrode (200) comprises y separate sub-N-type electrodes, and the y sub-N-type electrodes are connected to the y sub-N-type semiconductor layers in a one-to-one correspondence.

21. The diode light emitting device according to claim 20, characterized in that: At least a portion of the isolation structure (800) extends into the P-type semiconductor layer (301); And / or, at least a portion of the isolation structure (800) penetrates or extends to the reflector (100) close to the N-type semiconductor layer (201).

22. The diode light emitting device according to claim 19, characterized in that: The P-type semiconductor layer (301) comprises y separate P-type semiconductor sub-layers; The y light-emitting units (700) are close to one side of the N-type semiconductor layer (201) and are in contact and conduction with the N-type semiconductor layer (201); and the y light-emitting units (700) are close to the P-type semiconductor layer (301) and are in contact and conduction with the y sub-P-type semiconductor layers in a one-to-one correspondence; The P-type electrode (300) comprises y separate sub-P-type electrodes, and the y sub-P-type electrodes are connected to the y sub-P-type semiconductor layers in a one-to-one correspondence.

23. The diode light emitting device according to claim 22, characterized in that: At least a portion of the isolation structure (800) extends into the N-type semiconductor layer (201); And / or, at least a portion of the isolation structure (800) penetrates or extends to the reflector (100) close to the P-type semiconductor layer (301).

24. The diode light emitting device according to claim 17, characterized in that: When the first reflector (101) and the second reflector (102) are arranged on opposite sides of the light-emitting composite layer along a stacking direction parallel to the first light-emitting layer (400) and the second light-emitting layer (500), the diode light-emitting device has y resonant cavities, and there are y second reflectors (102), and the y second reflectors (102) are arranged at intervals and are arranged one by one on the light-emitting side of each light-emitting unit (700); The number of wavelengths of light transmitted by each second reflector (102) is greater than or equal to 1, and is the same as the wavelength of light emitted by the corresponding light emitting unit (700).

25. The diode light emitting device according to claim 17, characterized in that: When the first reflector (101) and the second reflector (102) are arranged on opposite sides of the light-emitting composite layer along a stacking direction perpendicular to the first light-emitting layer (400) and the second light-emitting layer (500), and a third reflector (103) is provided, the diode light-emitting device has y resonant cavities, y first reflectors (101), y second reflectors (102), and y third reflectors (103); The number of wavelengths of light transmitted by each second reflector (102) is greater than or equal to 1, and is the same as the wavelength of light emitted by the corresponding light emitting unit (700).

26. The diode light emitting device according to any one of claims 1 to 7, characterized in that: The first light-emitting layer (400) and the second light-emitting layer (500) both include a potential barrier layer and a potential well layer which are stacked; The material of the barrier layer includes III-V semiconductor material, and the material of the well layer includes II-VI semiconductor material.

27. The diode light emitting device according to any one of claims 1 to 7, characterized in that: The light emitted by the first light-emitting layer (400) includes at least one of four bands A, B, C and G, and each band includes c different wavelengths; The light emitted by the second light-emitting layer (500) includes at least one of seven bands: A, B, C, G, Y, R and IR, and each band includes d different wavelengths; The A band includes at least one of 400-420nm, 320-400nm, 275-320nm and 200-275nm; the B band is 420-480nm; the C band is 480-510nm; the G band is 510-565nm; the Y band is 565-590nm; the R band is 590-740nm; and the IR band is 740nm-1.7μm. Both c and d are greater than or equal to 1 and less than or equal to 10.

28. The diode light emitting device according to any one of claims 1 to 7, characterized in that: At least one of the following conditions must be met: The first light-emitting layer (400) is a blue light-emitting layer, and the second light-emitting layer (500) is a green light-emitting layer; the light emitted by the diode light-emitting device includes green light, or blue light, or a mixture of blue light and green light; The first light-emitting layer (400) is a blue light-emitting layer, and the second light-emitting layer (500) is a green light-emitting layer and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or green light, or blue light, or a mixture of green light and red light, or a mixture of blue light and red light, or a mixture of blue light and green light, or a mixture of blue light, green light and red light, that is, white light; The first light-emitting layer (400) is a blue light-emitting layer, and the second light-emitting layer (500) is a first green light-emitting layer, a second green light-emitting layer and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or blue light, or a first green light, or a second green light, or a mixture of red light and the first green light, or a mixture of red light and the second green light, or a mixture of blue light and red light, or a mixture of blue light and the first green light, or a mixture of blue light and the second green light, or a mixture of blue light, red light and the first green light, or a mixture of blue light, red light and the second green light, or a mixture of red light, the first green light and the second green light, or a mixture of red light, the first green light, the second green light and blue light, that is, white light; the wavelengths of the first green light and the second green light are different; The first light-emitting layer (400) is an ultraviolet light-emitting layer, the second light-emitting layer (500) is a blue light-emitting layer, and the light emitted by the diode light-emitting device includes ultraviolet light, or blue light, or a mixture of ultraviolet light and blue light; The first light-emitting layer (400) is an ultraviolet light-emitting layer, and the second light-emitting layer (500) is a green light-emitting layer and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or green light, or ultraviolet light, or a mixture of green light and red light, or a mixture of ultraviolet light and green light, or a mixture of ultraviolet light and red light, or a mixture of ultraviolet light, green light and red light, that is, white light; The first light-emitting layer (400) is an ultraviolet light-emitting layer, and the second light-emitting layer (500) is a first green light-emitting layer, a second green light-emitting layer and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or the first green light, or the second green light, or ultraviolet light, or a mixture of red light and the first green light, or a mixture of red light and the second green light, or a mixture of ultraviolet light and red light, or a mixture of ultraviolet light and the first green light, or a mixture of ultraviolet light and the second green light, or a mixture of ultraviolet light, red light and the first green light, or a mixture of ultraviolet light, red light and the second green light, or a mixture of red light, the first green light and the second green light, or a mixture of red light, the first green light and the second green light, that is, white light; the wavelengths of the first green light and the second green light are different; The first light-emitting layer (400) is a purple light-emitting layer, the second light-emitting layer (500) is a blue light-emitting layer, and the light emitted by the diode light-emitting device includes purple light, or blue light, or a mixture of purple light and blue light; The first light-emitting layer (400) is a purple light-emitting layer, and the second light-emitting layer (500) is a green light-emitting layer and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or green light, or purple light, or a mixture of green light and red light, or a mixture of purple light and green light, or a mixture of purple light and red light, or a mixture of purple light, green light and red light, that is, white light; The first light-emitting layer (400) is a purple light-emitting layer, and the second light-emitting layer (500) is a green light-emitting layer, a blue light-emitting layer, and a red light-emitting layer; the light emitted by the diode light-emitting device includes red light, or blue light, or green light, or purple light, or a mixture of red light and blue light, or a mixture of red light and green light, or a mixture of purple light and red light, or a mixture of purple light and blue light, or a mixture of purple light and green light, or a mixture of purple light, red light and blue light, or a mixture of purple light, red light and green light, or a mixture of red light, blue light and green light, or a mixture of red light, blue light, green light and purple light; the wavelengths of the first green light and the second green light are different.

29. The diode light emitting device according to any one of claims 1 to 7, characterized in that: It also includes a substrate (900), and the light-emitting composite layer is arranged on the substrate (900); The material of the substrate (900) includes at least one of sapphire, silicon-based, gallium nitride, silicon carbide, aluminum oxide, quartz and gallium oxide.

30. The diode light emitting device according to any one of claims 1 to 7, characterized in that: The diode light emitting device is a laser diode, and the functional area includes a gain area, a color conversion area, a beam shaping area and a spectrum half-width modulation area; Alternatively, the diode light emitting device is a resonant cavity light emitting diode, and the functional area includes a color conversion area, a beam shaping area and a spectrum half-width modulation area.

31. A laser light emitting device, characterized in that: A diode light emitting device comprising any one of claims 1 to 30.

32. The laser light emitting device according to claim 31, characterized in that: The laser light emitting device is at least one of the following: Laser chips, array lasers, laser chipsets, laser direct display, laser projection, infrared lasers and visible light lasers.

33. A resonant cavity light emitting device, characterized in that: A diode light emitting device comprising any one of claims 1 to 30.

34. The resonant cavity light emitting device according to claim 33, characterized in that: The resonant cavity light emitting device comprises at least one of the following: Resonant cavity light emitting diode chip, resonant cavity light emitting diode chip set, communication light source, lighting light source, display, medical beauty light source.

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