Preparation method of glass substrate and glass substrate

Abstract

The invention discloses a preparation method of a glass substrate and the glass substrate. The preparation method of the glass substrate comprises the following steps: preparing a to-be-treated glass substrate; the to-be-treated glass substrate comprises a glass layer and metal layers covering two side surfaces of the glass layer; respectively determining at least one group of target through hole positions from the metal layers on the two side surfaces, and windowing the metal layers corresponding to the target through hole positions to expose the glass layers corresponding to the target through hole positions; and performing anisotropic etching on the glass layer at the position of the target through hole to form a glass substrate comprising at least one through hole meeting a preset vertical condition. According to the technical scheme, double-sided corresponding windows are formed in the through hole positions of the metal layers on the two side faces of the glass substrate, the glass layers corresponding to the through hole positions are exposed, then anisotropic etching is conducted on the glass layers corresponding to the through hole positions, the hole walls of the through holes of the glass substrate can be more perpendicular, and then the circuit performance and reliability are improved.

Description

Technical Field

[0001] This application relates to the technical field of glass substrates, and particularly to a method for preparing a glass substrate and a glass substrate. Background Art

[0002] Due to its excellent dielectric properties, thermal stability, and cost-effectiveness, the glass substrate is considered to be a promising substrate material for the next-generation high-performance electronic packaging.

[0003] Currently, in the process of preparing through glass vias (TGV) on a glass substrate, the main implementation method is to use laser ablation technology to form vias on the glass substrate to achieve electrical connection between multilayer circuit boards. However, the vias generated during the laser ablation process generally exhibit a conical shape. The cross-sectional area of the conical via gradually decreases in the depth direction, resulting in an increase in signal fluctuations during current conduction, which affects the circuit performance and reliability. Summary of the Invention

[0004] The main technical problem to be solved by this application is to provide a method for preparing a glass substrate and a glass substrate, which can solve the technical problem that the vias of the glass substrate are in a conical state and improve the circuit performance and reliability.

[0005] To solve the above technical problem, this application provides a method for preparing a glass substrate, including:

[0006] Prepare a glass substrate to be processed; the glass substrate to be processed includes a glass layer and metal layers covering both sides of the glass layer;

[0007] Determine at least one set of target via positions from the metal layers on both sides respectively, and open windows on the metal layers corresponding to the target via positions to expose the glass layer corresponding to the target via positions;

[0008] Anisotropically etch the glass layer at the target via positions to form a glass substrate including at least one via that meets the preset vertical condition.

[0009] Optionally, the anisotropically etching the glass layer at the target via positions to form a glass substrate including at least one via that meets the preset vertical condition includes:

[0010] Use inductively coupled plasma etching technology to remove the glass layer at the target via positions to form vias that meet the preset vertical condition;

[0011] Perform metal sputtering on the vias to obtain the glass substrate including at least one via that meets the preset vertical condition.

[0012] Optionally, the glass layer contains a silicon material; removing the glass layer at the target via position includes:

[0013] Etching the silicon material at the target via position so that the silicon material at the target via position is extracted from the glass substrate to be processed in a gaseous form.

[0014] Optionally, the step of performing metal sputtering on the via to obtain the glass substrate including at least one via that meets the preset vertical condition includes:

[0015] Using physical vapor deposition technology, performing metal sputtering on the via to obtain the glass substrate including at least one via that meets the preset vertical condition.

[0016] Optionally, after the step of using inductively coupled plasma etching technology to remove the glass layer at the target via position to form a via that meets the preset vertical condition, and before the step of performing metal sputtering on the via to obtain the glass substrate including at least one via that meets the preset vertical condition, further includes:

[0017] Using ultrasonic waves to clean the inner wall of the via.

[0018] Optionally, the step of respectively determining at least one group of target via positions from the metal layers on the two sides includes:

[0019] At the relative positions of the metal layers on the two sides, using ultraviolet technology to burn out a preset plurality of target points;

[0020] Determining the target via positions according to the plurality of target points.

[0021] Optionally, after performing anisotropic etching on the glass layer at the target via position to form a glass substrate including at least one via that meets the preset vertical condition, further includes:

[0022] Performing pattern transfer and solder mask treatment on the glass substrate including at least one via that meets the preset vertical condition.

[0023] Optionally, preparing the glass substrate to be processed includes:

[0024] Preparing the glass layer and respectively performing metal sputtering on the two sides of the glass layer to obtain the glass substrate to be processed.

[0025] To solve the above technical problems, the present application further provides a glass substrate, the glass substrate includes a glass layer and a metal layer, and the glass substrate is prepared by the above preparation method.

[0026] Optionally, the metal layer is a titanium copper material.

[0027] Differing from the prior art, an embodiment of the present application provides a method for preparing a glass substrate, the method comprising: preparing a glass substrate to be processed; the glass substrate to be processed includes a glass layer and metal layers covering two side surfaces of the glass layer; determining at least one set of target via positions from the metal layers on the two side surfaces respectively, and performing windowing on the metal layers corresponding to the target via positions to expose the glass layer corresponding to the target via positions; performing anisotropic etching on the glass layer at the target via positions to form a glass substrate including at least one via that satisfies a preset vertical condition. By performing double-sided corresponding windowing at the via positions of the metal layers on two side surfaces of the glass substrate to expose the glass layer corresponding to the via positions, and then performing anisotropic etching on the glass layer corresponding to the via positions, the hole walls of the vias in the glass substrate can be made more vertical, thereby improving circuit performance and reliability. Description of the Drawings

[0028] Figure 1 is a schematic flowchart of the first embodiment of the method for preparing a glass substrate of the present application;

[0029] Figure 2 is a schematic flowchart of the second embodiment of the method for preparing a glass substrate of the present application;

[0030] Figure 3a is a schematic diagram of an embodiment of the glass substrate to be processed of the present application;

[0031] Figure 3b is a schematic diagram of an embodiment after the windowing process is performed on the target via positions of the present application;

[0032] Figure 3c is a schematic structural diagram of an embodiment after vias are prepared in the glass substrate to be processed of the present application;

[0033] Figure 3d is a schematic structural diagram of an embodiment of the glass substrate after the metallization process of the present application;

[0034] Figure 3e is a schematic structural diagram of an embodiment of the glass substrate after the graphic transfer process of the present application;

[0035] Figure 3f is a schematic structural diagram of an embodiment of the glass substrate after the solder mask and surface treatment processes of the present application.

[0036] Reference numerals in the drawings: the glass layer 1 after blanking; the metal layer 2; the glass layer 3 corresponding to the target via positions; the via 4; the glass substrate 5 after metallization; the glass substrate 6 after graphic transfer; the solder mask layer 7; the glass substrate 8 after solder mask and surface treatment. Detailed Description

[0037] The present application will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0038] In this embodiment, it is considered that the glass substrate is composed of silicate double salts, etc., and is a glass sheet material with high melting point, strong chemical stability, and strong insulation, which can have a lower dielectric constant, better thermal expansion coefficient, and flatness than ordinary resin substrates. The current practice is mainly to use the lightly doped drain (LDD) process to ablate the glass substrate to form through holes, but the through holes generated by the LDD process are in a conical shape, and there are certain signal fluctuations when the conical through holes conduct current.

[0039] Therefore, this embodiment proposes a preparation method for a glass substrate based on anisotropic etching technology, which can solve the technical problem that the through holes of the glass substrate are in a conical state, and improve the circuit performance and reliability. Please refer to Figure 1 , Figure 1 is a schematic flowchart of the first embodiment of the preparation method of the glass substrate of the present application. It should be noted that if there are substantially the same results, the method of the present application is not limited to Figure 1 the process sequence shown. As Figure 1 shown, a preparation method for a glass substrate, the power supply system includes a plurality of power supply modules, and the preparation method for the glass substrate includes:

[0040] S110, prepare a glass substrate to be processed; the glass substrate to be processed includes a glass layer, and metal layers covering two sides of the glass layer;

[0041] Specifically, prepare a glass substrate to be processed, which can be composed of a glass layer and metal layers on two sides of the glass layer. This metal layer can be a conductive material such as titanium copper, copper, aluminum, gold, etc., for subsequent circuit connection. Among them, the coverage of the metal layer can be achieved by physical vapor deposition (PVD), chemical vapor deposition (CVD), or electroplating.

[0042] S120, respectively determine at least one group of target through hole positions from the metal layers on the two sides, and open windows on the metal layers corresponding to the target through hole positions to expose the glass layers corresponding to the target through hole positions;

[0043] Specifically, since the embodiment is to prepare through holes that meet the vertical conditions on the glass substrate, one group of target through hole positions corresponds to one through hole, and one group of target through hole positions can be the positions of through holes opposite to each other on the two sides.

[0044] Optical or laser positioning technology can be used to determine the target via positions on the two metal layers. Then, a windowing technique is used to open a window in the metal layer corresponding to the target via position, exposing the glass layer corresponding to the target via position. That is, a photoresist film is first laminated on the metal layer, then pattern exposure is performed through a mask, and then the photoresist in the exposed area is developed to expose the metal layer. Finally, an etching solution is used to etch away the copper in these areas to form small holes corresponding to the target via positions.

[0045] S130, anisotropically etch the glass layer at the target via position to form a glass substrate including at least one via that satisfies a preset vertical condition.

[0046] Specifically, anisotropic etching technology can be used to precisely etch the glass layer at the target via position to form straight-wall vias. Compared with laser ablation, anisotropic etching technology can precisely control the shape and size of the vias, reduce the taper effect, thereby improving the perpendicularity and electrical performance of the vias. The vertical condition can be that the via sidewalls of the glass substrate are as perpendicular to the substrate surface as possible, so that the vias can be similar to cylindrical or rectangular columns, and their central axes are perpendicular to the substrate surface. Thus, the finally obtained glass substrate has high-precision vias of the glass substrate, which can achieve effective electrical connection between glass layers, and at the same time have good signal transmission characteristics, and are suitable for various advanced packaging technologies and microsystem integration applications.

[0047] Among them, the anisotropic etching technology can be inductively coupled plasma etching, ion beam etching, reactive ion etching, deep reactive ion etching, etc.

[0048] In this embodiment, by making double-sided corresponding windows at the via positions of the metal layers on the two sides of the glass substrate, exposing the glass layer corresponding to the via positions, and then anisotropically etching the glass layer corresponding to the via positions, the via sidewalls of the glass substrate can be made more perpendicular, thereby improving the circuit performance and reliability.

[0049] Furthermore, during the preparation of the glass substrate, the target point can be used as a reference point for determining the via position, and at the same time, it can also be used for precise alignment of the circuit pattern. However, due to the transparency of the glass material and its high light transmittance, it is difficult to capture the target point. Therefore, in this application, metal layers are provided on the two sides of the glass substrate, so that the target point can be accurately identified, improving the preparation accuracy of the glass substrate.

[0050] Please refer to Figure 2 , Figure 2 which is a schematic flowchart of the second embodiment of the method for preparing the glass substrate of this application. Specifically, it can include:

[0051] S210. Prepare the glass layer, and perform metal sputtering on two sides of the glass layer respectively to obtain the glass substrate to be processed;

[0052] Among them, sputtering can use physical vapor deposition technology to deposit a thin film of metal or other materials on the substrate. Specifically, the materials required for the sputtering process include a vacuum chamber, a target (the source of the deposited material), and an ion source. When high-energy ions generated by the ion source bombard the target, atoms of the target are sputtered out and deposited on the substrate located in the vacuum chamber to form a thin film, that is, the metal layer in this embodiment.

[0053] Specifically, select a glass material as the metal layer, and use physical vapor deposition technology to perform metal sputtering on two sides of the glass layer respectively to form a uniform and strongly adherent metal layer.

[0054] S220. Use ultraviolet technology to burn out a plurality of preset target points at the relative positions of the metal layers on the two sides;

[0055] Specifically, the target points can be small circular or specific-shaped marks, which can be pre-designed in the exposure equipment. A combination of multiple target points can form the position of the target through-hole, which is a reference mark for determining the position of the target through-hole. After the metal layer is sputtered on the surface of the glass layer, the surface of the glass substrate is not completely transparent, and since the metal layer can reflect light, the metal layer can facilitate the identification and positioning of the exposure equipment, making the target points more obvious and distinguishable on the metal layer.

[0056] At the same time, ultraviolet technology acts on the metal layer and does not penetrate the glass, which can ensure that the marks at the through-hole positions are clearly visible and will not damage the glass substrate. Therefore, in this embodiment, ultraviolet technology is used to burn out a plurality of preset target points on the metal layers on both sides.

[0057] S230. Determine the position of the target through-hole according to the plurality of target points;

[0058] Specifically, according to the target points burned by the laser, the position of the target through-hole can be accurately located through an optical detection system, which can improve the accuracy of the position of each through-hole.

[0059] S240. Open a window in the metal layer corresponding to the position of the target through-hole to expose the glass layer corresponding to the position of the target through-hole;

[0060] Specifically, a photoresist film is coated on the metal layer, and the photoresist film is exposed to ultraviolet light according to the pattern masks of multiple target points. The transparent areas on the mask allow light to pass through and irradiate the photoresist film, while the blocking areas prevent the light from reaching, thereby leaving a pattern on the photoresist film. After exposure, the photoresist film is sent into the developer. Under the action of the developer, the photoresist film in the exposed area will dissolve, while the photoresist film in the unexposed area remains unchanged. In this way, an opening corresponding to the mask pattern is formed. Then, the exposed part of the metal layer is etched by a chemical etching solution until it reaches the glass layer, exposing the glass layer corresponding to the target via position.

[0061] Compared with the existing solution that directly opens the via hole wall by using a strong laser, in this embodiment, a metal layer is sputtered on the glass layer in advance and double-sided openings are made, and its breakdown stress is smaller and the risk of substrate fragmentation is lower.

[0062] S250, using inductively coupled plasma etching technology, remove the glass layer at the target via position to form a via hole that meets the preset vertical condition;

[0063] Among them, inductively coupled plasma etching (ICP) technology is a dry etching technology that uses plasma to etch materials, and the plasma is excited by a high-frequency electromagnetic field generated by an induction coil.

[0064] Specifically, since inductively coupled plasma etching can provide a highly anisotropic etching effect, that is, the etching speed in the vertical direction is much greater than that in the horizontal direction, and the glass layer is a hard and brittle material, traditional methods such as mechanical drilling or laser ablation may cause edge cracks or microcracks. Therefore, using inductively coupled plasma etching to prepare via holes in a glass substrate can form vertical or nearly vertical via holes through the thickness of the glass layer, reducing the tapered (X-shaped structure) effect of the via holes.

[0065] Furthermore, the glass layer contains silicon material; the using inductively coupled plasma etching technology includes: using inductively coupled plasma etching technology to etch the silicon material at the target via position, so that the silicon material at the target via position is extracted from the glass substrate to be processed in a gaseous form.

[0066] In an exemplary embodiment, inductively coupled plasma etching utilizes the contact between ions in the plasma and the surface of the silicon wafer, which will cause a chemical reaction. The silicon material reacts with the etching gas to form volatile compounds such as silicon tetrafluoride and silicon tetrachloride. The volatile compounds formed during the etching process exist in the form of gas and are pumped out through the pumping system in the chamber, which can prevent the etching products from redepositing on the silicon wafer and ensure the etching quality. Since most of the etching waste is effectively removed in the form of gas, it can reduce the contamination of the silicon wafer and the exposure equipment, and also facilitate the subsequent waste gas treatment and environmental protection.

[0067] S260, use ultrasonic waves to clean the inner wall of the through hole.

[0068] Specifically, ultrasonic cleaning is a technique that utilizes the cavitation effect generated by ultrasonic energy in a liquid medium to clean the surface of an object, used to remove possible contaminants and residues inside and around the through holes of the glass substrate, ensuring the quality of the subsequent metallization process.

[0069] S270, perform metal sputtering on the through hole to form a glass substrate including at least one through hole that meets the preset vertical condition.

[0070] Among them, metal sputtering can be a process of depositing a metal layer on the surface of a glass layer (non-metal) for realizing a conductive path or connection. In the through hole process of a glass substrate, techniques such as physical vapor deposition, chemical vapor deposition, electroplating, electroless plating, molecular beam epitaxy, and atomic layer deposition can be used for metal sputtering.

[0071] Furthermore, performing metal sputtering on the through hole to obtain the glass substrate including at least one through hole that meets the preset vertical condition includes: using physical vapor deposition technology to perform metal sputtering on the through hole to obtain the glass substrate including at least one through hole that meets the preset vertical condition.

[0072] Specifically, since the titanium-copper alloy combines the high strength and corrosion resistance of titanium and the good electrical conductivity of copper. This alloy has good electrical conductivity while maintaining a certain mechanical strength. Therefore, in this embodiment, the metal layer is preferably a titanium-copper layer. At the same time, considering that physical vapor deposition can provide a uniform and smooth thin film, and can precisely control the deposition rate and the composition of the titanium-copper alloy. Therefore, in this embodiment, physical vapor deposition technology is used to perform titanium-copper alloy sputtering on the glass layer, which can combine the excellent properties of the titanium-copper alloy and utilize the high precision, uniformity, and adaptability of physical vapor deposition technology to meet the requirements for high-performance metal layers in microelectronics, optoelectronics, and other high-tech applications.

[0073] S280, perform pattern transfer and solder mask layer treatment on the glass substrate including at least one through hole that meets the preset vertical condition.

[0074] Among them, graphic transfer can be one of the ways to visualize the circuit on the glass substrate. The specific process can include pretreatment, film pasting, exposure, development, graphic electroplating, film stripping, and etching. The solder mask layer can be a protective layer covering the non-welding areas on the circuit board, usually made of polymer materials, used to prevent solder from spreading to places where solder joints should not exist during the soldering process, thus avoiding short circuits and other electrical faults.

[0075] In an exemplary embodiment, refer to Figure 3a , Figure 3a , which shows the glass layer 1 after blanking, and uses physical vapor deposition technology to sputter a metal layer 2 on both sides of the glass layer as a substrate; then, through an exposure device, ultraviolet technology is used to make target points, and the target via positions are determined according to the positions of the target points; then, according to the target via positions, the exposure device is continuously used to open windows on the relative positions of the metal layer 2 on both sides of the glass substrate, refer to Figure 3b , to expose the glass layer 3 corresponding to the target via positions; then, inductively coupled plasma etching is used to vertically remove the glass layer 3 corresponding to the exposed target via positions, and the hole walls are cleaned with ultrasonic cleaning, refer to Figure 3c , to form through holes 4 that meet the vertical conditions; then, physical vapor deposition technology can be used again to sputter the through holes 4 to metallize the hole walls of the through holes 4 for facilitating circuit conduction, forming a metallized glass substrate 5 as shown in Figure 3d ; then, the metallized glass substrate 5 can be subjected to graphic transfer to make a circuit layer, forming a glass substrate 6 after graphic transfer as shown in Figure 3e ; then, refer to Figure 3f , to make a solder mask layer 7 and surface treatment on the glass substrate 6 after graphic transfer, forming a glass substrate 8 after solder mask and surface treatment.

[0076] In this embodiment, by sputtering a metal layer on both sides of the glass layer respectively, and using an exposure device to make target points on the metal layers on both sides, and then determining the target via positions according to the target points, and then opening windows on the exposure device for the target via positions, it is possible to effectively identify the target points on the glass substrate while completing both the target points and the window opening of the target via positions on the same exposure device, improving the preparation efficiency of the glass substrate; and by using physical vapor deposition technology to etch the glass layer, the hole walls of the through holes are made more vertical, improving the circuit conduction and electrical performance effects.

[0077] In addition, an embodiment of the present application also proposes a glass substrate, which includes a glass layer and a metal layer, and the glass substrate is prepared by the preparation method of the glass substrate described above when being prepared.

[0078] Further, the metal layer is made of titanium copper material.

[0079] Specifically, since titanium has excellent adhesion properties and can firmly adhere to the glass substrate, this provides a solid foundation for subsequent metal layer deposition. Pure copper or other metals may have poor adhesion on the glass substrate, resulting in easy peeling of the metal layer during processing or use. At the same time, copper is a good conductive material with low resistivity and is suitable for forming conductive paths of circuits. In addition, the titanium copper alloy layer can act as a barrier layer to prevent the diffusion of copper to the glass substrate or surrounding materials and to prevent the penetration of substrate materials into the metal layer, which can maintain the stability of the circuit and prevent short circuits. Therefore, this embodiment preferably uses a titanium copper layer as the metal layer.

[0080] Different from the prior art, the embodiment of the present application provides a method for preparing a glass substrate, the method including: preparing a glass substrate to be processed; the glass substrate to be processed includes a glass layer and metal layers covering two sides of the glass layer; determining at least one set of target via positions from the metal layers on the two sides respectively, and performing window opening on the metal layers corresponding to the target via positions to expose the glass layer corresponding to the target via positions; performing anisotropic etching on the glass layer at the target via positions to form a glass substrate including at least one via that meets a preset vertical condition. By performing double-sided corresponding window opening at the via positions of the metal layers on two sides of the glass substrate to expose the glass layer corresponding to the via positions, and then performing anisotropic etching on the glass layer corresponding to the via positions, the hole walls of the vias in the glass substrate can be made more vertical, thereby improving circuit performance and reliability.

[0081] In several implementation manners provided by the present application, it should be understood that the disclosed methods, power supply systems, and storage media can be implemented in other ways. For example, the device implementation manners described above are only illustrative. For example, the division of the modules or units is only a logical function division, and there can be other division manners in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the shown or discussed couplings or direct couplings or communication connections to each other can be through some interfaces, and the indirect couplings or communication connections of the devices or units can be in electrical, mechanical, or other forms.

[0082] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they can be located in one place or distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this implementation manner.

[0083] In addition, in each embodiment of the present application, each functional unit can be integrated into one processing unit, or each unit can exist physically alone, or two or more units can be integrated into one unit. The above-mentioned integrated unit can be implemented in the form of hardware or in the form of a software functional unit.

[0084] If the above-mentioned integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on such an understanding, the technical solution of the present application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) or a processor to execute all or part of the steps of the methods described in each embodiment of the present application. The aforementioned storage medium includes: various media such as USB flash drives, mobile hard disks, read-only memories (ROMs), random access memories (RAMs), magnetic disks, or optical discs that can store program codes.

[0085] The above are only the embodiments of the present application, and do not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall be equally included in the patent protection scope of the present application.

Claims

1. A method for preparing a glass substrate, characterized in that: The preparation method comprises: Preparing a glass substrate to be processed; the glass substrate to be processed comprises a glass layer and a metal layer covering two sides of the glass layer; Determine at least one group of target through-hole positions from the metal layers on the two side surfaces respectively, and open windows in the metal layers corresponding to the target through-hole positions to expose the glass layers corresponding to the target through-hole positions; Anisotropic etching is performed on the glass layer at the target through-hole position to form a glass substrate including at least one through-hole that meets a preset vertical condition.

2. The preparation method according to claim 1, characterized in that: The anisotropic etching of the glass layer at the target through-hole position to form a glass substrate including at least one through-hole satisfying a preset vertical condition comprises: Using inductively coupled plasma etching technology, the glass layer at the target through-hole position is removed to form a through-hole that meets the preset vertical condition; Metal sputtering is performed on the through hole to obtain the glass substrate including at least one through hole that meets the preset vertical condition.

3. The preparation method according to claim 2, characterized in that: The glass layer comprises silicon material; and removing the glass layer at the target through hole position comprises: The silicon material at the target through-hole position is etched so that the silicon material at the target through-hole position is extracted from the glass substrate to be processed in the form of gas.

4. The preparation method according to claim 2, characterized in that: The step of performing metal sputtering on the through hole to obtain the glass substrate including at least one through hole satisfying a preset vertical condition comprises: The through hole is subjected to metal sputtering by using physical vapor deposition technology to obtain the glass substrate comprising at least one through hole that meets the preset vertical condition.

5. The preparation method according to claim 2, characterized in that: After the step of removing the glass layer at the target through-hole position by using the inductively coupled plasma etching technology to form a through-hole that meets the preset vertical condition, and before the step of performing metal sputtering on the through-hole to obtain the glass substrate including at least one through-hole that meets the preset vertical condition, the process further includes: Ultrasonic waves are used to clean the hole walls of the through holes.

6. The preparation method according to claim 1, characterized in that: The step of determining at least one set of target through-hole positions from the metal layers on the two sides respectively comprises: At the relative positions of the metal layers on the two side surfaces, a plurality of preset target points are burned out by using ultraviolet technology; The target through-hole position is determined according to the multiple target points.

7. The preparation method according to claim 1, characterized in that: The glass layer at the target through-hole position is anisotropically etched to form a glass substrate including at least one through-hole satisfying a preset vertical condition, and then further comprising: The glass substrate including at least one through hole satisfying a preset vertical condition is subjected to pattern transfer and solder resist layer processing.

8. The preparation method according to claim 1, characterized in that: The step of preparing a glass substrate to be processed comprises: The glass layer is prepared, and metal sputtering is performed on two side surfaces of the glass layer respectively to obtain the glass substrate to be processed.

9. A glass substrate, characterized in that: The glass substrate comprises a glass layer and a metal layer, and the glass substrate is prepared by the preparation method according to any one of claims 1 to 8.

10. The glass substrate according to claim 9, characterized in that: The metal layer is made of titanium copper material.

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