Display panel

Abstract

The invention relates to a display panel and a display device, and the display panel comprises a substrate, at least one first sensing unit disposed on one side of the substrate; the first sensing unit comprises a first photoelectric conversion layer, a first electrode and a second electrode, wherein the first electrode and the second electrode are located on the two sides of the first photoelectric conversion layer in the direction perpendicular to the plane where the substrate is located. The at least one second sensing unit is arranged on one side of the substrate; the second sensing unit comprises a second photoelectric conversion layer, and a first electrode and a second electrode which are located on two sides of the second photoelectric conversion layer in a direction parallel to the plane where the substrate is located; the display panel comprises a first photoelectric detection device, and the first photoelectric detection device comprises at least one first sensing unit and at least one second sensing unit which are arranged in parallel. According to the invention, the accuracy of monitoring light of different colors at the same time can be improved.

Description

Technical Field

[0001] The present application relates to the field of display technologies, and particularly to a display panel. Background Art

[0002] With the continuous development of display technologies, organic light-emitting diode (OLED) display devices have been widely used in multiple fields such as flat panel displays, flexible displays, in-vehicle displays, and solid-state lighting due to advantages such as a wide color gamut, high contrast ratio, energy conservation, and foldability. Integrating a photoelectric detection device (photoelectric sensor) in a display panel to monitor the state of the display panel (such as monitoring brightness attenuation) or the atmosphere of ambient light not only has the advantage of a thin display panel thickness but also easily enables comprehensive and multi-site detection. For example, integrating a photoelectric detection device (photoelectric sensor) in an OLED display panel to monitor the lifetimes of different color sub-pixels, thereby compensating for the display image quality of the display panel.

[0003] However, in related technologies, it is difficult to simultaneously monitor different types of color light well. Summary of the Invention

[0004] Based on this, it is necessary to provide a display panel and a display device, aiming to solve the problem that it is difficult to simultaneously monitor different types of color light well in related technologies.

[0005] In a first aspect, an embodiment of the present application provides a display panel, including:

[0006] A substrate:

[0007] At least one first sensing unit disposed on one side of the substrate; the first sensing unit includes a first photoelectric conversion layer, and a first electrode and a second electrode located on both sides of the first photoelectric conversion layer in a direction perpendicular to the plane where the substrate is located;

[0008] At least one second sensing unit disposed on one side of the substrate; the second sensing unit includes a second photoelectric conversion layer, and a first electrode and a second electrode located on both sides of the second photoelectric conversion layer in a direction parallel to the plane where the substrate is located;

[0009] Wherein, the display panel includes a first photoelectric detection device, and the first photoelectric detection device includes at least one of the first sensing units and at least one of the second sensing units connected in parallel.

[0010] In some embodiments, the first photoelectric conversion layer includes a first doped region, a first conversion region, and a second doped region sequentially stacked in a direction perpendicular to the plane where the substrate is located;

[0011] The second photo - electric conversion layer includes a third doping region, a second conversion region, and a fourth doping region that are sequentially connected and arranged on a plane parallel to the plane where the substrate is located.

[0012] In some embodiments, the material of the first conversion region is different from the material of the second conversion region.

[0013] In some embodiments, the material of the first conversion region includes amorphous silicon; and / or,

[0014] The material of the second conversion region includes polycrystalline silicon.

[0015] In some embodiments, it further includes:

[0016] A plurality of thin - film transistors, including active portions;

[0017] At least one of the first conversion region and the second conversion region has the same material as the active portion and is arranged in the same layer.

[0018] In some embodiments, the display panel further includes a second photo - electric detection device, and the second photo - electric detection device includes at least one of the first sensing units and at least one of the second sensing units arranged in parallel;

[0019] The first photo - electric detector and the second photo - electric detection device are used to receive light of different wavelength bands.

[0020] In some embodiments, the first photo - electric detection device is used to receive blue light, and the second photo - electric detection device is used to receive at least one of red light, green light, and white light.

[0021] In some embodiments, the display panel further includes a third photo - electric detection device, the third photo - electric detection device only includes the first sensing unit, and the number of the first sensing units in the third photo - electric detection device is at least one;

[0022] The first photo - electric detector and the third photo - electric detection device are used to receive light of different wavelength bands.

[0023] In some embodiments, the first photo - electric detection device is used to receive blue light, and the third photo - electric detection device is used to receive at least one of red light, green light, and white light.

[0024] In some embodiments, the display panel further includes a fourth photo - electric detection device. In the fourth photo - electric detector, the first sensing unit and the second sensing unit are used to receive light of different wavelength bands.

[0025] In the embodiment of the present application, by providing that the display panel includes a first photodetector, and the first photodetector includes at least one first sensing unit and at least one second sensing unit arranged in parallel, the photodetector can better monitor light rays of different colors. The first sensing unit includes a first photoelectric conversion layer, and a first electrode and a second electrode located on both sides of the first photoelectric conversion layer in a direction perpendicular to the plane of the substrate, that is, the first sensing unit is a vertical sensing unit; the second sensing unit includes a second photoelectric conversion layer, and a first electrode and a second electrode located on both sides of the second photoelectric conversion layer in a direction parallel to the plane of the substrate, that is, the second sensing unit is a horizontal sensing unit. In the first aspect, the first sensing unit and the second sensing unit in the first photodetector receive light rays of the same color, for example, receive blue light. The exposure time of the photodetector to light rays of the same color is balanced (for example, the exposure time of the first photodetector to blue light is the average of the first sensing unit and the second sensing unit). Compared with only providing the first sensing unit, the sensitivities of different photodetectors to light rays of different colors are more uniform, thereby improving the detection accuracy and precision of the photodetector to light rays of different colors. In the second aspect, the first photodetector is used as a compensating or enhancing photodetector. The first photodetector receives light rays of a color with a long exposure time. For example, the first photodetector receives blue light, and other photodetectors that only include the first sensing unit receive at least one of red light, green light, and white light, reducing the exposure time of blue light, making the exposure time of blue light closer and more uniform to the exposure time of other color light rays, thereby improving the detection accuracy and precision of different photodetectors to light rays of different colors. In the third aspect, the first sensing unit and the second sensing unit in the first photodetector receive light rays of different colors. For example, the second sensing unit receives blue light, and the first sensing unit receives at least one of red light, green light, and white light, avoiding the absorption and blocking problems of blue light by the first sensing unit, thereby reducing the exposure time of blue light, making the exposure time of blue light closer and more uniform to the exposure time of other color light rays, thereby improving the detection accuracy and precision of the photodetector to light rays of different colors. Based on at least one of the above aspects, the present application can improve the detection accuracy and precision of the photodetector to light rays of different colors. Description of the Drawings

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0027] Figure 1 A circuit schematic diagram of a photoelectric detection device provided by an embodiment of the present application.

[0028] Figure 2 A schematic structural diagram of a first sensing unit in a display panel provided by an embodiment of the present application.

[0029] Figure 3 A schematic structural diagram of a second sensing unit in a display panel provided by an embodiment of the present application.

[0030] Figure 4 A schematic diagram of an arrangement of a first photoelectric detection device in a display panel provided by an embodiment of the present application.

[0031] Figure 5 A schematic diagram of an arrangement of a first photoelectric detection device and a third photoelectric detection device in a display panel provided by an embodiment of the present application.

[0032] Figure 6 A schematic diagram of an arrangement of a first photoelectric detection device, a second photoelectric detection device, and a third photoelectric detection device in a display panel provided by an embodiment of the present application.

[0033] Figure 7 A partial cross-sectional schematic diagram of a film layer structure of a display panel provided by an embodiment of the present application.

[0034] Figure 8 A schematic diagram of an arrangement of a fourth photoelectric detection device in a display panel provided by an embodiment of the present application.

[0035] Figure 9 A schematic diagram of a display device provided by some embodiments of the present application.

[0036] Reference numerals:

[0037] Display device 200; Display panel 100; First sensing unit P1; Second sensing unit P2; First photoelectric conversion layer P02; First electrode P01; Second electrode P04; First doping region P021; First conversion region P022; Second doping region P023; Second photoelectric conversion layer P03; Third doping region P031; Second conversion region P032; Fourth doping region P033; First photoelectric detection device 50; Second photoelectric detection device 60; Third photoelectric detection device 70; Fourth photoelectric detection device 80;

[0038] Base 11; semiconductor layer 12; gate insulating layer 13; first metal layer 14; first interlayer insulating layer 15; second metal layer 16; second interlayer insulating layer 17; third metal layer 18; planarization layer 19; pixel definition layer 20; thin film transistor T0; active portion 121; gate 141; capacitive electrode 161; source 181; drain 182; pixel definition opening 21; light emitting device 123; encapsulation layer 101;

[0039] First transistor T1; second transistor T2; third transistor T3; reset scan line RST; fixed voltage signal line VDD; selection scan line READ; voltage signal output line VOUT; ground signal line GND; first node N1; color filter layer 30; first color filter 31s; second color filter 32s; third color filter 33s. Detailed implementation manners

[0040] For ease of understanding of the present application, the present application will be described more comprehensively below with reference to the relevant drawings. Preferred embodiments of the present application are shown in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided so that the understanding of the disclosure of the present application is more thorough and comprehensive.

[0041] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this application belongs. The terms used in the specification of this application herein are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0042] When describing positional relationships, unless otherwise specified, when an element such as a layer, film or substrate is referred to as being "on" another element, it can be directly on the other element or there can also be intermediate elements. Further, when a layer is referred to as being "under" another layer, it can be directly below or there can be one or more intermediate elements. It can also be understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or there can also be one or more intermediate elements.

[0043] In cases where "including", "having", and "comprising" described herein are used, unless explicit limiting terms such as "only", "consisting of", etc. are used, another component can also be added. Unless otherwise mentioned, terms in the singular form can include the plural form and should not be construed as having a quantity of one.

[0044] It should be understood that although terms such as "first" and "second" may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of the present application, the first element may be referred to as the second element, and similarly, the second element may be referred to as the first element.

[0045] It should also be understood that when interpreting an element, although not explicitly described, the element is interpreted as including an error range, and this error range should be within the acceptable deviation range of a specific value determined by those skilled in the art. For example, "about", "approximately" or "substantially" may mean within one or more standard deviations, which is not limited herein.

[0046] In addition, in the specification, the phrase "schematic diagram of planar distribution" refers to the accompanying drawing when observing the target part from above, and the phrase "schematic sectional view" refers to the accompanying drawing when observing the section obtained by vertically cutting the target part from the side.

[0047] In addition, the accompanying drawings are not drawn to a scale of 1:1, and the relative sizes of the various elements are only drawn by way of example in the accompanying drawings and not necessarily to the true scale.

[0048] Without departing from the spirit or scope of the present application, various modifications and variations can be made in the present application, which will be apparent to those skilled in the art. Therefore, the present application is intended to cover the modifications and variations of the present application that fall within the scope of the corresponding claims (the claimed technical solutions) and their equivalents. It should be noted that the embodiments provided in the embodiments of the present application can be combined with each other without conflict.

[0049] As described in the background art section, it is difficult to simultaneously monitor different colors of light well in the related art. The inventors found that the reasons for the above phenomenon include at least one of the following reasons: 1) The exposure times of red light, green light, blue light, and white light in the same sensing unit are different, and the response speeds of the same sensing unit to different colors of light are different, resulting in different speeds of the sensing chip reading the optoelectronic signals generated by different colors of light, reducing the detection accuracy of the optoelectronic detection device for different colors of light or different color sub-pixel states; 2) In the vertical sensing unit (the structure is the first sensing unit in the following embodiments), most of the blue light is absorbed or blocked by the surface sub-layer of the optoelectronic conversion layer (such as the second doping region introduced in the subsequent embodiments), and most of the blue light fails to reach the inner sub-layer of the optoelectronic conversion layer (such as the first conversion region introduced in the subsequent embodiments), increasing the exposure time of the blue light in the vertical sensing unit, reducing the sensitivity of the vertical sensing unit to the blue light, and thus reducing the detection accuracy of the optoelectronic detection device for different colors of light or different color sub-pixel states.

[0050] Based on the above technical problems, the inventors have found through research that by providing a display panel including a first photodetector device, and the first photodetector device including at least one first sensing unit and at least one second sensing unit arranged in parallel, the photodetector device can better monitor light of different colors. The first sensing unit includes a first photoelectric conversion layer, and a first electrode and a second electrode located on both sides of the first photoelectric conversion layer in a direction perpendicular to the plane where the substrate is located, that is, the first sensing unit is a vertical sensing unit; the second sensing unit includes a second photoelectric conversion layer, and a first electrode and a second electrode located on both sides of the second photoelectric conversion layer in a direction parallel to the plane where the substrate is located, that is, the second sensing unit is a horizontal sensing unit. In the first aspect, the first sensing unit and the second sensing unit in the first photodetector device receive light of the same color, for example, receive blue light, and the exposure time of the photodetector device to light of the same color is balanced (for example, the exposure time of the first photodetector device to blue light is the average value of the first sensing unit and the second sensing unit). Compared with only providing the first sensing unit, the sensitivity of different photodetector devices to light of different colors is more uniform, thereby improving the detection accuracy and precision of the photodetector device to light of different colors. In the second aspect, the first photodetector device is used as a compensated or enhanced photodetector device. The first photodetector device receives light of a color with a long exposure time. For example, the first photodetector device receives blue light, and other photodetector devices including only the first sensing unit receive at least one of red light, green light, and white light, reducing the exposure time of blue light, making the exposure time of blue light closer and more uniform to the exposure time of other color lights, thereby improving the detection accuracy and precision of different photodetector devices to light of different colors. In the third aspect, the first sensing unit and the second sensing unit in the first photodetector device receive light of different colors. For example, the second sensing unit receives blue light, and the first sensing unit receives at least one of red light, green light, and white light, avoiding the absorption and blocking problems of the first sensing unit to blue light, thereby reducing the exposure time of blue light, making the exposure time of blue light closer and more uniform to the exposure time of other color lights, thereby improving the detection accuracy and precision of the photodetector device to light of different colors. Based on at least one of the above aspects, the present application can improve the detection accuracy and precision of the photodetector device to light of different colors.

[0051] Please refer to Figures 1 to 8 。 Figure 1 FIG. is a circuit schematic diagram of a photodetector device provided by an embodiment of the present application. Figure 2 FIG. is a structural schematic diagram of a first sensing unit in a display panel provided by an embodiment of the present application. Figure 3 FIG. is a structural schematic diagram of a second sensing unit in a display panel provided by an embodiment of the present application.Figure 4 Schematic diagram of the arrangement of a first optoelectronic detection device in a display panel provided by an embodiment of the present application.

[0052] Figure 5 Schematic diagram of the arrangement of a first optoelectronic detection device and a third optoelectronic detection device in a display panel provided by an embodiment of the present application. Figure 6 Schematic diagram of the arrangement of a first optoelectronic detection device, a second optoelectronic detection device, and a third optoelectronic detection device in a display panel provided by an embodiment of the present application.

[0053] Figure 7 Partial cross-sectional schematic diagram of the film layer structure of a display panel provided by an embodiment of the present application.

[0054] Figure 8 Schematic diagram of the arrangement of a fourth optoelectronic detection device in a display panel provided by an embodiment of the present application. Figure 8 It is also another schematic diagram of the arrangement of the first optoelectronic detection device.

[0055] It should be noted that Figures 1 to 8 the display panel may further include other structures, which are not shown. The structure of the display panel is not limited to Figures 1 to 8 shown.

[0056] It should be noted that Figures 4 to 6 and Figure 8 schematically show the arrangement of the first sensing unit and the second sensing unit, but the relative positional relationship and film layer structure relationship between the first sensing unit and the second sensing unit are not limited to Figures 4 to 6 and Figure 8 shown. For example Figure 4 in Figure 4 the first sensing unit and the second sensing unit may not be arranged on the same layer. For example

[0057] It should be noted that Figure 5 and Figure 6 schematically show the first optoelectronic detection device, the second optoelectronic detection device, and the third optoelectronic detection device. The display panel may also only include Figure 5 and Figure 6 some of the sensing units or optoelectronic detection devices in

[0058] The present application provides a display panel 100, as shown in Figures 1 to 4As shown, the display panel 100 includes a substrate 11, at least one first sensing unit P1, and at least one second sensing unit P2. At least one first sensing unit P1 is disposed on one side of the substrate 11; the first sensing unit P1 includes a first photoelectric conversion layer P02, and a first electrode P01 and a second electrode P04 located on both sides of the first photoelectric conversion layer P02 in a direction perpendicular to the plane where the substrate 11 is located; at least one second sensing unit P2 is disposed on one side of the substrate 11; the second sensing unit P2 includes a second photoelectric conversion layer P03, and a first electrode P01 and a second electrode P04 located on both sides of the second photoelectric conversion layer P03 in a direction parallel to the plane where the substrate 11 is located; wherein, the display panel 100 includes a first photodetector 50, and the first photodetector 50 includes at least one first sensing unit P1 and at least one second sensing unit P2 connected in parallel.

[0059] Exemplarily, as Figure 1 shown, the circuit of the photodetector is schematically shown. The circuit of the photodetector includes a first transistor T1, a second transistor T2, a third transistor T3, a first sensing unit P1, and a second sensing unit P2. The circuit of the photodetector further includes a reset scan line RST, a fixed voltage signal line VDD, a selection scan line READ, and a voltage signal output line VOUT. The working phases of the circuit of the photodetector may include a reset phase, an exposure phase, and an electrical signal output phase. It should be noted that the circuit of the photodetector is not limited to Figure 1 the example shown, and the working phases of the circuit of the photodetector are not limited to the reset phase, the exposure phase, and the electrical signal output phase.

[0060] Exemplarily, Figure 1 it is schematically shown that the first sensing unit P1 and the second sensing unit P2 are connected in parallel between the first node N1 and the ground signal line GND, but not limited thereto. For example, the first sensing unit P1 and the second sensing unit P2 are connected in parallel between the first node N1 and the second fixed signal line.

[0061] In the reset phase, the first transistor T1 is turned on in response to the control signal of the reset scan line RST to reset the first sensing unit P1 and the second sensing unit P2; the reset voltage signal of the fixed voltage signal line VDD is transmitted to the gate of the second transistor T2 (or the first node N1) through the first transistor T1, and the voltage signal at the gate of the second transistor T2 (or the first node N1) rises to the input voltage value of the first voltage signal line VDD. At this time, the second transistor T2 is turned on.

[0062] During the exposure stage, the light of the display panel or the external light is projected onto the first sensing unit P1 and the second sensing unit P2, causing the resistance values of the first sensing unit P1 and the second sensing unit P2 to change, generating charges, and forming a photocurrent; due to the leakage current, the voltage signal at the gate of the second transistor T2 begins to drop.

[0063] Electric signal output stage: Since the light intensities and / or light wavelengths entering the first conversion region P022 and the second conversion region P032 (introduced in subsequent embodiments) are different during the exposure stage, the generated photocurrents are different, resulting in different change values of the electric signals at the gate of the second transistor T2 (or the first node N1), and thus the electric signals detected by the voltage signal output line VOUT are also different. By detecting the electric signal of the voltage signal output line VOUT through the sensing chip, the light detection function is realized.

[0064] Exemplarily, as Figure 2 shown, the first sensing unit P1 includes a first photoelectric conversion layer P02, and a first electrode P01 and a second electrode P04 located on both sides of the first photoelectric conversion layer P02 in a direction perpendicular to the plane where the substrate 11 is located; that is, the first sensing unit P1 includes the first electrode P01, the first photoelectric conversion layer P02, and the second electrode P04 sequentially stacked on one side of the substrate 11.

[0065] Exemplarily, as Figure 3 shown, the second sensing unit P2 includes a second photoelectric conversion layer P03, and a first electrode P01 and a second electrode P04 located on both sides of the second photoelectric conversion layer P03 in a direction parallel to the plane where the substrate 11 is located; that is, the second sensing unit P2 includes the first electrode P01, the second photoelectric conversion layer P03, and the second electrode P04 sequentially connected on one side of the substrate 11 and in a direction parallel to the plane where the substrate 11 is located.

[0066] Exemplarily, as Figure 4 shown, the first photodetector 50 includes at least one first sensing unit P1 and at least one second sensing unit P2 connected in parallel. In some embodiments, the first photodetector 50 includes one first sensing unit P1 and one second sensing unit P2 connected in parallel. In some embodiments, the first photodetector 50 includes two first sensing units P1 and one second sensing unit P2 connected in parallel. In some embodiments, the first photodetector 50 includes one first sensing unit P1 and two second sensing units P2 connected in parallel. In some embodiments, the first photodetector 50 includes a plurality of first sensing units P1 and a plurality of second sensing units P2 connected in parallel.

[0067] Exemplarily, as Figure 4As shown, the first sensing unit P1 or the second sensing unit P2 receives light of a certain color, and a color resistor corresponding to the color can be arranged on one side of the first sensing unit P1. For example Figure 4 In Figure 4 , both the first sensing unit P1 and the second sensing unit P2 receive blue light. A first color resistor 31s is arranged on the side of the first sensing unit P1 and the second sensing unit P2 away from the substrate 11. At this time, the first color resistor 31s is a blue resistor, and the blue resistor only allows blue light to pass through and reach the first sensing unit P1 and the second sensing unit P2.

[0068] In the embodiment of the present application, by setting the display panel 100 to include a first photodetector 50, and the first photodetector 50 includes at least one first sensing unit P1 and at least one second sensing unit P2 arranged in parallel, the photodetector can better monitor light of different colors. The first sensing unit P1 includes a first photoelectric conversion layer P02, and a first electrode P01 and a second electrode P04 located on both sides of the first photoelectric conversion layer P02 in a direction perpendicular to the plane where the substrate 11 is located, that is, the first sensing unit P1 is a vertical sensing unit; the second sensing unit P2 includes a second photoelectric conversion layer P03, and a first electrode P01 and a second electrode P04 located on both sides of the second photoelectric conversion layer P03 in a direction parallel to the plane where the substrate 11 is located, that is, the second sensing unit P2 is a horizontal sensing unit. First, as Figure 4 、 Figure 5 and Figure 6 Examples (detailed in subsequent embodiments), the first sensing unit P1 and the second sensing unit P2 in the first photodetector 50 receive light of the same color, such as receiving blue light, and the exposure time of the photodetector to light of the same color is balanced (for example, the exposure time of the first photodetector 50 to blue light is the average value of the first sensing unit P1 and the second sensing unit P2). Compared with only setting the first sensing unit P1, the sensitivities of different photodetectors to light of different colors are more uniform, thereby improving the detection accuracy and precision of the photodetector to light of different colors. Second, as Figure 5 and Figure 6 Examples (detailed in subsequent embodiments), the first photodetector 50 is used as a compensating or enhancing photodetector. The first photodetector 50 receives light of a color with a long exposure time. For example, the first photodetector 50 receives blue light of the first photodetector 50, and other photodetectors including only the first sensing unit P1 receive at least one of red light, green light, and white light, reducing the exposure time of blue light and making the exposure time of blue light closer and more uniform to the exposure times of other color lights, thereby improving the detection accuracy and precision of different photodetectors to light of different colors. Third, as Figure 8Example (detailed in subsequent embodiments), the first sensing unit P1 and the second sensing unit P2 in the first photodetector 50 receive light of different colors. For example, the second sensing unit P2 receives blue light, and the first sensing unit P1 receives at least one of red light, green light, and white light, avoiding the absorption and blocking problems of blue light by the first sensing unit P1. Thus, the exposure time of blue light can be reduced, making the exposure time of blue light closer and more uniform to that of other color lights. Therefore, the detection accuracy and precision of the photodetector for different color lights can be improved. Based on at least one of the above aspects, the present application can improve the detection accuracy and precision of the photodetector for different color lights.

[0069] In some embodiments, as Figure 2 and Figure 3 shown, the first photoelectric conversion layer P02 includes a first doping region P021, a first conversion region P022, and a second doping region P023 that are sequentially stacked on a plane perpendicular to the plane where the substrate 11 is located; the second photoelectric conversion layer P03 includes a third doping region P031, a second conversion region P032, and a fourth doping region P033 that are sequentially connected on a plane parallel to the plane where the substrate 11 is located.

[0070] Exemplarily, as Figure 2 shown, the first sensing unit P1 includes a first electrode P01, a first doping region P021, a first conversion region P022, a second doping region P023, and a second electrode P04 that are sequentially stacked on one side of the substrate 11.

[0071] Exemplarily, as Figure 3 shown, the second sensing unit P2 includes a first electrode P01, a third doping region P031, a second conversion region P032, a fourth doping region P033, and a second electrode P04 that are sequentially connected on one side of the substrate 11 and in a direction parallel to the plane where the substrate 11 is located.

[0072] Exemplarily, one of the first doping region P021 and the second doping region P023 is an N-type doped semiconductor material, and the other is a P-type doped semiconductor material, and the first conversion region P022 is an undoped intrinsic semiconductor material.

[0073] Exemplarily, one of the third doping region P031 and the fourth doping region P033 is an N-type doped semiconductor material, and the other is a P-type doped semiconductor material, and the second conversion region P032 is an undoped intrinsic semiconductor material.

[0074] Exemplarily, both the first sensing unit P1 and the second sensing unit P2 are photodiodes, and the structures of the first sensing unit P1 and the second sensing unit P2 are not limited to Figure 2 and Figure 3As shown, for example, the first sensing unit P1 does not include the first conversion region P022, and for example, the second sensing unit P2 does not include the second conversion region P032.

[0075] In some embodiments, the materials of the first conversion region P022 and the second conversion region P032 are different. This can respectively improve the sensitivity of the first sensing unit P1 and the second sensing unit P2 to light.

[0076] In some embodiments, the material of the first conversion region P022 includes amorphous silicon; and / or, the material of the second conversion region P032 includes polycrystalline silicon.

[0077] Exemplarily, the inventors found through research that when amorphous silicon is used as the first photoelectric conversion layer P02 of the first sensing unit P1, the photoelectric conversion efficiency after absorbing red light and green light is relatively high, the first sensing unit P1 has relatively high sensitivity to red light and green light, and the exposure time is short.

[0078] Exemplarily, the inventors found through research that when polycrystalline silicon is used as the second photoelectric conversion layer P03 of the second sensing unit P2, the photoelectric conversion efficiency after absorbing blue light is relatively high, the second sensing unit P2 has relatively high sensitivity to blue light, and the exposure time is short.

[0079] Exemplarily, the inventors found through research that when the first sensing unit P1 absorbs blue light, most of the blue light is absorbed or blocked by the second doping region P023, and most of the blue light fails to reach the first conversion region P022, resulting in an increase in the exposure time of blue light in the first sensing unit P1, a decrease in the sensitivity of the first sensing unit P1 to blue light, an increase in the difference in exposure time between blue light and other color lights, thereby reducing the detection accuracy of the photoelectric detection device for different color lights or different color sub-pixel states.

[0080] Exemplarily, as Figure 4 For example, in the first photoelectric detection device 50, the first sensing unit P1 and the second sensing unit P2 receive light of the same color, for example, receive blue light, and the exposure time of the photoelectric detection device to light of the same color is balanced (for example, the exposure time of the first photoelectric detection device 50 to blue light is the average of the first sensing unit P1 and the second sensing unit P2). Compared with only setting the first sensing unit P1, the exposure time and sensitivity of different photoelectric detection devices to different color lights are more uniform, thereby improving the detection accuracy and precision of the photoelectric detection device for different color lights.

[0081] In some embodiments, as Figure 7As shown, the display panel 100 further includes a plurality of thin film transistors T0, and the thin film transistor T0 includes an active portion 121; at least one of the first conversion region P022 and the second conversion region P032 has the same material as the active portion 121 and is disposed in the same layer, which can simplify the manufacturing process of the display panel 100.

[0082] Exemplarily, in some embodiments, the material of the active portion 121 is amorphous silicon, the material of the first conversion region P022 includes amorphous silicon, and the material of the second conversion region P032 includes polycrystalline silicon. The first conversion region P022 has the same material as the active portion 121 and is disposed in the same layer.

[0083] Exemplarily, in some other embodiments, the material of the active portion 121 is polycrystalline silicon, the material of the first conversion region P022 includes amorphous silicon, and the material of the second conversion region P032 includes polycrystalline silicon. The second conversion region P032 has the same material as the active portion 121 and is disposed in the same layer.

[0084] Exemplarily, Figure 7 Illustratively, the display panel 100 includes a substrate 11, a semiconductor layer 12, a gate insulating layer 13, a first metal layer 14, a first interlayer insulating layer 15, a second metal layer 16, a second interlayer insulating layer 17, a third metal layer 18, a planarization layer 19, and a pixel definition layer 20 which are stacked. The semiconductor layer 12 includes the active portion 121 of the thin film transistor T0 and the second conversion region P032. The first metal layer 14 includes the gate 141 of the thin film transistor T0. The second metal layer 16 includes a capacitor electrode 161, and the third metal layer 18 includes a source electrode 181 and a drain electrode 182 of the thin film transistor T0. The pixel definition layer 20 includes a plurality of pixel definition openings 21, and the pixel definition openings 21 are openings of sub-pixels, and at least part of the light-emitting material of the light-emitting device 123 is located within the pixel definition openings 21. It should be noted that the film layer structure of the display panel is not limited to Figure 7 as illustrated. For example, the film layer positions of the first metal layer 14 and the semiconductor layer 12 are interchanged.

[0085] Exemplarily, as Figure 5 shown in FIG. 7, the photodetector can be disposed between two adjacent light-emitting devices 123. For example, the orthographic projection of the first photodetector device 50 on the substrate 11 is located between the orthographic projections of two adjacent light-emitting devices 123 on the substrate 11.

[0086] Exemplarily, as Figure 5 shown in FIG. 7, the sensing unit can be disposed between two adjacent light-emitting devices 123. For example, the orthographic projection of the first sensing unit P1 and / or the second sensing unit P2 on the substrate 11 is located between the orthographic projections of two adjacent light-emitting devices 123 on the substrate 11.

[0087] Exemplarily, the photodetector can be disposed between two adjacent light-emitting devices 123. The photodetector can receive the light emitted by the light-emitting device 123 of the display panel 100 to determine the attenuation degree of the light-emitting brightness of the light-emitting device 123.

[0088] Exemplarily, the photodetector can be disposed in the non-display area. The photodetector can receive the ambient light to determine the intensity of the ambient light.

[0089] In some embodiments, as Figure 6 shown, the display panel 100 further includes a second photodetection device 60. The second photodetection device 60 includes at least one first sensing unit P1 and at least one second sensing unit P2 arranged in parallel; the first photodetector and the second photodetection device 60 are used to receive lights of different wavelength bands.

[0090] Exemplarily, the first photodetection device 50 serves as a compensating or enhancing photodetection device. The first photodetection device 50 receives the light of the color with a long exposure time. For example, the first photodetection device 50 is used to receive blue light. At the same time, a second photodetection device 60 is added. The second photodetection device 60 includes at least one first sensing unit P1 and at least one second sensing unit P2 arranged in parallel. The first photodetector and the second photodetection device 60 are used to receive lights of different wavelength bands, which can balance the exposure time of lights of different wavelength bands, make the exposure times of lights of different colors close, and thus can improve the detection accuracy and precision of different photodetection devices for lights of different colors.

[0091] In some embodiments, as Figure 6 shown, the first photodetection device 50 is used to receive blue light, and the second photodetection device 60 is used to receive at least one of red light, green light, and white light.

[0092] Exemplarily, the wavelength of blue light is short and the exposure time of blue light is long. The first photodetection device 50 serves as a compensating or enhancing photodetection device, which can reduce or balance the exposure time of blue light.

[0093] In some embodiments, as Figure 5 shown, the display panel 100 further includes a third photodetection device 70. The third photodetection device 70 only includes the first sensing unit P1, and the number of the first sensing units P1 in the third photodetection device 70 is at least one; the first photodetection device 50 and the third photodetection device 70 are used to receive lights of different wavelength bands.

[0094] Exemplarily, the display panel 100 includes the first photodetection device 50 and the third photodetection device 70, and the first photodetection device 50 serves as a compensating or enhancing photodetection device.

[0095] In some embodiments, such as Figure 5 shown, the first photodetector device 50 is configured to receive blue light, and the third photodetector device 70 is configured to receive at least one of red light, green light, and white light.

[0096] Exemplarily, the blue light has a short wavelength and a long exposure time. The first photodetector device 50, as a compensating or enhancing photodetector device, can reduce or balance the exposure time of the blue light.

[0097] It should be noted that, as Figure 5 and Figure 6 shown, the first photodetector device 50 includes at least one first sensing unit P1 and at least one second sensing unit P2 arranged in parallel; the second photodetector device 60 includes at least one first sensing unit P1 and at least one second sensing unit P2 arranged in parallel; the third photodetector device 70 only includes the first sensing unit P1, and the number of the first sensing units P1 in the third photodetector device 70 is at least one.

[0098] It should be noted that in some embodiments, in the first case, as Figure 5 shown, the display panel includes the first photodetector device 50 and the third photodetector device 70. The first photodetector device 50 is configured to receive blue light, and a partial number of the third photodetector devices 70 are configured to receive red light, and a partial number of the third photodetector devices 70 are configured to receive green light. In some other embodiments, in the second case, as Figure 6 shown, the display panel includes the first photodetector device 50, the second photodetector device 60, and the third photodetector device 70. The first photodetector device 50 is configured to receive blue light, the second photodetector device 60 is configured to receive red light, and the third photodetector device 70 is configured to receive green light. In some other embodiments, in the third case (not shown in the figure), the display panel includes the first photodetector device 50 and the second photodetector device 60. The first photodetector device 50 is configured to receive blue light, and a partial number of the second photodetector devices 60 are configured to receive red light, and a partial number of the third photodetector devices 70 are configured to receive green light. By adopting the above three cases, the exposure times of different color lights can be made closer and more uniform, thereby improving the detection accuracy and precision of the photodetector device for different color lights. In combination with the area setting of the sensing unit, any one of the above cases can be selected to achieve a better effect.

[0099] It should be noted that, Figure 5It is illustrated that the color filter layer 30 includes a first-color color filter 31s, a second-color color filter 32s, and a third-color color filter 33s. The first photodetector 50 is configured to receive blue light, and a partial number of the third photodetectors 70 are configured to receive red light, and a partial number of the third photodetectors 70 are configured to receive green light. The first-color color filter 31s, the second-color color filter 32s, and the third-color color filter 33s are a blue color filter, a red color filter, and a green color filter, respectively. The orthographic projection of the first photodetector 50 on the substrate 11 and the orthographic projection of the first-color color filter 31s on the substrate 11 overlap at least partially. The orthographic projection of the third photodetector 70 configured to receive red light on the substrate 11 and the orthographic projection of the second-color color filter 32s on the substrate 11 overlap at least partially. The orthographic projection of the third photodetector 70 configured to receive green light on the substrate 11 and the orthographic projection of the third-color color filter 33s on the substrate 11 overlap at least partially.

[0100] It should be noted that Figure 6 It is illustrated that the color filter layer 30 includes a first-color color filter 31s, a second-color color filter 32s, and a third-color color filter 33s. The first photodetector 50 is configured to receive blue light, the second photodetector 60 is configured to receive red light, and the third photodetector 70 is configured to receive green light. The first-color color filter 31s, the second-color color filter 32s, and the third-color color filter 33s are a blue color filter, a red color filter, and a green color filter, respectively. The orthographic projection of the first photodetector 50 on the substrate 11 and the orthographic projection of the first-color color filter 31s on the substrate 11 overlap at least partially. The orthographic projection of the second photodetector 60 on the substrate 11 and the orthographic projection of the second-color color filter 32s on the substrate 11 overlap at least partially. The orthographic projection of the third photodetector 70 on the substrate 11 and the orthographic projection of the third-color color filter 33s on the substrate 11 overlap at least partially.

[0101] In some embodiments, as Figure 8 shown, the display panel 100 further includes a fourth photodetector 80. In the fourth photodetector 80, a first sensing unit P1 and a second sensing unit P2 are configured to receive light of different wavelength bands.

[0102] Exemplarily, in Figure 8 the example, the first sensing unit P1 and the second sensing unit P2 in the fourth photodetector 80 are configured to receive light of different wavelength bands, or the first sensing unit P1 and the second sensing unit P2 in the first photodetector 50 are configured to receive light of different wavelength bands.

[0103] Exemplarily, in Figure 8In the example, the first sensing unit P1 and the second sensing unit P2 in the first photodetector device 50 or the fourth photodetector device 80 receive light rays of different colors. For example, the second sensing unit P2 receives blue light, and the first sensing unit P1 receives at least one of red light, green light, and white light. This avoids the problem of the first sensing unit P1 absorbing and blocking blue light, thereby reducing the exposure time of blue light and making the exposure time of blue light closer and more uniform to that of light rays of other colors. As a result, the detection accuracy and precision of the photodetector device for light rays of different colors can be improved.

[0104] It should be noted that the inventor's research found that, theoretically, the external quantum efficiency decreases with the increase of the incident light wavelength. That is, in the ideal case, the EQE (External Quantum Efficiency) of blue light is higher than that of green light. However, the external quantum efficiency of the first sensing unit P1 is smaller in the blue light band than in the green light band. This is because the light absorption theory of semiconductors shows that the penetration depth in the blue light band is relatively shallow, and most of the blue light is absorbed by the second doping region P023 and does not enter the first conversion region P022 for photoelectric conversion. Therefore, for the photoelectric conversion efficiency of the first sensing unit P1, green light is the highest (short exposure time), and blue light is the lowest (long exposure time). The second sensing unit P2 is more in line with the theoretical formula of photoelectric conversion efficiency, with blue light being the highest (short exposure time) and green light (long exposure time) being the second. In the embodiments of any of the above, by combining the advantages and disadvantages of the first sensing unit P1 and the second sensing unit P2, it is more beneficial to the consistency of the exposure time of light rays of different colors and reduces the exposure time.

[0105] It should be noted that, as Figures 4 to 7 shown, the film layer structure of the display panel 100 is not limited to the example provided. For example, the display panel 100 may further include a packaging layer 101, and the packaging layer 101 covers the light-emitting device 123, and the color resist layer 30 is disposed on the side of the packaging layer 101 away from the substrate 11.

[0106] Please refer to Figure 9 , Figure 9 which is a schematic diagram of a display device provided by some embodiments of the present application.

[0107] In a second aspect, based on the same inventive concept, the present application further provides a display device 200. The display device 200 includes the display panel 100 of any one of the above, or the display device 200 includes the display panel 100 combined with several of the above features.

[0108] Exemplarily, the display device 200 also has the beneficial effects of the display panel 100 in the above embodiments. The same parts can be understood by referring to the explanation of the display panel 100 above, and will not be repeated hereinafter.

[0109] Exemplarily, the display device 200 provided by the embodiments of the present application may be Figure 9 the mobile phone shown in the figure, or any electronic product with a display function, including but not limited to the following categories: television, laptop, desktop monitor, tablet computer, digital camera, smart bracelet, smart glasses, in-vehicle display, industrial control equipment, medical display screen, touch interaction terminal, etc. The embodiments of the present application do not make special limitations on this.

[0110] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of concise description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.

[0111] The above-described embodiments only represent several implementation manners of the present application. The description is relatively specific and detailed, but it should not be understood as a limitation on the scope of the invention patent. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several deformations and improvements can be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.

Claims

1. A display panel, characterized in that: include: Base: At least one first sensing unit is disposed on one side of the substrate, the first sensing unit comprising a first photoelectric conversion layer, and a first electrode and a second electrode located on both sides of the first photoelectric conversion layer in a direction perpendicular to the plane where the substrate is located; At least one second sensing unit is disposed on one side of the substrate, the second sensing unit comprising a second photoelectric conversion layer, and a first electrode and a second electrode located on both sides of the second photoelectric conversion layer in a direction parallel to the plane where the substrate is located; Wherein, the display panel includes a first photoelectric detection device, and the first photoelectric detection device includes at least one first sensing unit and at least one second sensing unit arranged in parallel.

2. The display panel according to claim 1, characterized in that: The first photoelectric conversion layer includes a first doping region, a first conversion region, and a second doping region which are sequentially stacked on a plane perpendicular to the substrate; The second photoelectric conversion layer includes a third doping region, a second conversion region and a fourth doping region which are sequentially connected and arranged on a plane parallel to the substrate.

3. The display panel according to claim 2, characterized in that: The material of the first conversion region is different from the material of the second conversion region.

4. The display panel according to claim 2, characterized in that: The material of the first conversion region includes amorphous silicon; and / or, The material of the second conversion region includes polysilicon.

5. The display panel according to claim 2, characterized in that: Also includes: A plurality of thin film transistors including an active portion; At least one of the first conversion region and the second conversion region is made of the same material as the active portion and is disposed in the same layer.

6. The display panel according to claim 1, characterized in that: The display panel further includes a second photoelectric detection device, wherein the second photoelectric detection device includes at least one of the first sensing units and at least one of the second sensing units arranged in parallel; The first photodetector and the second photodetector are used to receive light of different wavelength bands.

7. The display panel according to claim 6, characterized in that: The first photodetection device is used to receive blue light, and the second photodetection device is used to receive at least one of red light, green light and white light.

8. The display panel according to claim 1, characterized in that: The display panel further includes a third photodetection device, the third photodetection device includes only the first sensing unit, and the number of the first sensing unit in the third photodetection device is at least one; The first photodetector and the third photodetector are used to receive light of different wavelength bands.

9. The display panel according to claim 8, characterized in that: The first photodetection device is used to receive blue light, and the third photodetection device is used to receive at least one of red light, green light and white light.

10. The display panel according to claim 1, characterized in that: The display panel further includes a fourth photodetector device, in which the first sensing unit and the second sensing unit are used to receive light of different wavelength bands.

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