Novel organic-inorganic hybrid perovskite semiconductor photoelectric device

Abstract

The invention relates to the field of semiconductor materials, in particular to an organic-inorganic hybrid perovskite semiconductor photoelectric device, which attacks from multiple dimensions of materials, structures, processes, monitoring, regulation and application: optimizing perovskite materials, designing a new device structure, innovating a preparation process, building a monitoring system and expanding an application scene. The characteristics of intelligent planning, low-temperature lifting, self-repairing and miniaturized customization are also integrated, so that the photoelectric property, the stability and the preparation efficiency are remarkably improved.

Description

Technical Field

[0001] The present invention relates to the field of information management systems, and particularly to a novel organic-inorganic hybrid perovskite semiconductor optoelectronic device. Background Art

[0002] The global demand for clean energy and high-performance optoelectronic devices is urgent. Due to strong light absorption, adjustable bandgap, and low cost, organic-inorganic hybrid perovskite semiconductors have attracted much attention in the fields of photovoltaics, LEDs, and photodetection. However, there are many obstacles in practical applications. The perovskite material itself has poor stability and is easily decomposed in a conventional environment, resulting in rapid decay of device performance; during large-area preparation, the existing processes cannot accurately control the crystallization process, and the film uniformity and crystal phase purity are poor; there are a large number of defects at the interfaces of each layer inside the device, and carriers recombine here, greatly weakening the photoelectric conversion efficiency, and innovative breakthroughs are urgently needed. Summary of the Invention

[0003] The present invention provides a novel organic-inorganic hybrid perovskite semiconductor optoelectronic device, including an optimized perovskite material, and the perovskite material is a methylammonium lead iodide (MAPbI 3 ) system, in which cesium (Cs) element partially replaces methylammonium (MA), the doping ratio of Cs is 10%-30%, and it contains 0.05%-0.15% of bismuth-containing organic compound tris(2-ethylhexyl)bismuth (Bi(2-EH) 3 ).

[0004] Furthermore, the optoelectronic device further includes a two-dimensional / three-dimensional composite perovskite structure, with three-dimensional MAPbI 3 as the backbone, and a two-dimensional phenethylammonium lead iodide (PEA 2 PbI 4 ) perovskite layer with a content of 5%-15% grows in-situ on the surface or grain boundaries.

[0005] Furthermore, when the optoelectronic device is a solar cell, it has a multi-layer heterojunction structure, and an electron transport layer (ETL) and a hole transport layer (HTL) are respectively provided on both sides of the perovskite absorption layer. The electron transport layer is a zinc oxide (ZnO) nanoparticle layer with a thickness of 30-50 nm, the hole transport layer is a spirobifluorene-9,9'-diarylamine (Spiro-OMeTAD) layer with a thickness of 100-200 nm, and there is an ultrathin aluminum oxide (Al 2 O 3 ) buffer layer with a thickness of 1-3 nm between the ETL and the perovskite layer.

[0006] Furthermore, when the optoelectronic device is a photodetector, a periodic nano-column array is prepared on the surface of the perovskite active layer, and the diameter of the nano-columns is 100-300 nm and the height is 500-1000 nm.

[0007] Furthermore, the method of the photoelectric device adopts a two-step solution spin coating method. In the first step, lead iodide (PbI 2 ) The solution is spin coated on the substrate at a rotation speed of 3000-4000 rpm and dried at 70-90°C for 5-10 minutes; secondly, the solution containing organic cations and dopants is spin coated at a rotation speed of 2000-3000 rpm and then annealed at 100-120°C for 10-20 minutes.

[0008] Furthermore, the solution containing organic cations and dopants comprises MAI, CsI and 0.1% Bi(2-EH) mixed in proportion. 3 .

[0009] Furthermore, the method of the optoelectronic device adopts a vapor-assisted deposition process, placing the perovskite precursor in a high-temperature evaporation source, maintaining the evaporation temperature at 150-200°C in a vacuum chamber, and using argon gas with a flow rate of 20-50sccm as a carrier gas to uniformly deposit the precursor vapor on the substrate.

[0010] Furthermore, the system for monitoring the performance of the optoelectronic device described in the claims includes an in-situ photocurrent density, photovoltage and spectral response joint testing system, which tracks the photoelectric conversion efficiency, photocurrent density, photovoltage and spectral response range of the device in the preparation process and aging stage in real time, and automatically adjusts subsequent process parameters when the photoelectric conversion efficiency drops by more than 3% or the photocurrent density fluctuates by more than 5%.

[0011] Furthermore, in the method for low temperature adaptability of the optoelectronic device, an organic additive containing ethylene glycol accounting for 5%-10% of the total raw material mass is added to the perovskite precursor solution to ensure that the optoelectronic performance of the device decays by less than 15% in a low temperature environment of -20°C.

[0012] Furthermore, the method for improving the self-repair properties of the optoelectronic device is to incorporate 0.5%-1% of the material mass of disulfide bond-containing organic small molecules into the perovskite material. When microcracks appear inside the material due to stress, the disulfide bonds break and reconnect under heat or light stimulation to repair the microcracks.

[0013] Beneficial effects:

[0014] 1. Improved photoelectric performance: The materials and structures are optimized in a coordinated manner, the photoelectric conversion efficiency is improved by 10%-20% compared with traditional devices, the light absorption range is widened by 10%-30%, the light is more fully utilized, and the output electrical energy or optical signal is stronger.

[0015] 2. Enhanced stability: With improved material formula and preparation process, the performance retention rate of the device is greater than 90% after being stored in a hot and humid environment for 1,000 hours, and the durability is significantly improved, reducing the cost of frequent replacement and maintenance.

[0016] 3. High-efficiency preparation: The innovative preparation process increases production efficiency by 30%-50%, and the yield of large-area preparation increases by 20%-30%. The batch consistency is excellent, which is conducive to large-scale industrial production.

[0017] -30%, with good batch consistency, facilitating large-scale industrial production.

[0018] 4. Precise quality control: The real-time monitoring system controls the performance deviation of each batch of devices within <3%, and the product quality is stable and reliable, meeting the high-standard market demand.

[0019] 5. Diverse application expansion: It has been successfully applied in building photovoltaics, high-definition displays, etc., opening up emerging markets and meeting the diverse needs of different fields.

[0020] 6. Synergy of composite systems: After the combination of different perovskites, the optoelectronic performance is improved by 10%-15%, and the stability is enhanced, unlocking application scenarios for high-order complex working conditions.

[0021] 7. Intelligent optimization and upgrade: The intelligent process planning software combined with machine learning is continuously iterated to steadily improve the yield.

[0022] 8. Low-temperature performance guarantee: The ethylene glycol additive maintains the low-temperature optoelectronic performance, and the decline amplitude is <15%, broadening the operating temperature range.

[0023] 9. Self-healing and extended lifespan: The material containing disulfide bonds endows the material with self-healing ability, repairs microcracks, extends the device lifespan, and reduces the usage cost.

[0024] 10. Miniaturization and flexible customization: Relying on MEMS technology to achieve the customization of micro-devices, accurately meeting the special scenario requirements of implantable medical treatment, microsensors, etc. Detailed implementation manners

[0025] Example 1

[0026] (1) Preparation of doped perovskite

[0027] Accurately weigh appropriate amounts of lead iodide (PbI 2 ), methylammonium iodide (MAI), cesium iodide (CsI) and 0.1% tris(2-ethylhexyl)bismuth (Bi(2-EH) 3) It is dissolved in a solvent prepared by mixing N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) at a volume ratio of 4:1 to prepare a precursor solution with a concentration of 1.2 mol / L. Using the improved two-step spin-coating method, in the first step, the solution is spin-coated on an ozone-treated ITO glass substrate at a speed of 3500 rpm and dried on a hot plate at 80 °C for 8 minutes; in the second step, the remaining precursor solution containing a small amount of anti-solvent chlorobenzene is dropped, spin-coated at 2500 rpm, and then annealed at 110 °C for 15 minutes. The spin-coating speed is monitored by a high-precision laser velocimeter throughout the process, and the temperature is monitored by a thermocouple thermometer. Compared with the perovskite film prepared by the traditional un-doped and un-optimized spin-coating process, the film prepared by this method has a smoother and denser surface. Through atomic force microscope (AFM) detection, the roughness is reduced from the traditional 20 nm to 5 nm, and the crystallinity is increased by 30%, which lays a foundation for the subsequent improvement of device performance.

[0028] (II) Synthesis of two-dimensional / three-dimensional composite perovskite

[0029] First, a high-quality three-dimensional methylammonium lead iodide (MAPbI 3 ) film is prepared, and then an isopropanol solution of phenethylammonium iodide (PEA-I) is slowly dropped onto the surface of MAPbI 3 . After annealing at 100 °C for 30 minutes, the in-situ growth of two-dimensional phenethylammonium lead iodide (PEA 2 PbI 4 ) on MAPbI 3 is achieved, and the content of two-dimensional perovskite is controlled to be 10%. Compared with the pure three-dimensional MAPbI 3 perovskite, the water vapor adsorption test is used to evaluate the stability. After the composite sample is placed in an environment with a humidity of 60% for 72 hours, it still maintains more than 90% of the initial optoelectronic performance, while the pure MAPbI 3 can only retain 50%; the light absorption test shows that the average light absorption coefficient of the composite system in the 400 - 800 nm band is increased by 15%, broadening the light response range.

[0030] (III) Device structure assembly

[0031] Multilayer heterojunction solar cell: On the perovskite absorption layer prepared above, zinc oxide (ZnO) nanoparticles with a thickness of about 40 nm are spin-coated as the electron transport layer, and 150 nm of spiro-bifluorene-9,9'-diarylamine (Spiro-OMeTAD) is used as the hole transport layer, with a 2 nm thick aluminum oxide (Al 2 O 3) Buffer layer. After each layer was spin-coated, it was thermally annealed at 150 °C for 10 minutes, and then a silver electrode was evaporated to complete the battery assembly. Compared with the traditional structure solar cell, the open-circuit voltage of this multi-layer heterojunction battery increased by 0.2 V, and the short-circuit current density increased by 5 mA / cm 2 , and the photoelectric conversion efficiency increased from 18% to 22%.

[0032] Micro-nano structure photodetector: By using photolithography and etching processes, a periodic nano-column array was fabricated on the surface of the perovskite active layer. The diameter of the nano-columns was 200 nm and the height was 800 nm. Compared with the planar structure photodetector, the optical responsivity of the micro-nano structure detector at a wavelength of 550 nm increased from 0.3 A / W to 0.6 A / W, and the response time was shortened from 50 μs to 20 μs, significantly enhancing the detection performance.

[0033] Example 2

[0034] (I) Composite perovskite system

[0035] CsPbI 3 and MAPbI 3 were uniformly mixed in a DMF-DMSO mixed solvent at a molar ratio of 2:1 and stirred for 12 hours to ensure complete dissolution. Subsequently, a one-step spin-coating method was used to spin-coat on the substrate at a speed of 3000 rpm, and annealed at 120 °C for 20 minutes to form a composite perovskite film. By testing the photoelectric conversion efficiency, it was found that compared with the single MAPbI 3 perovskite film, under standard AM 1.5G illumination, the photoelectric conversion efficiency increased from 19% to 23%; in terms of stability testing, after continuous illumination at 80 °C for 500 hours, the performance retention rate of the composite system was 85%, while that of MAPbI 3 was only 60% when used alone, fully demonstrating the advantages of the composite system.

[0036] Example 3

[0037] (I) Intelligent regulation

[0038] When preparing the doped perovskite film, the spin-coating speed in the second step was deliberately set to 1500 rpm, which was much lower than the normal 2500 rpm. The intelligent monitoring system quickly captured the abnormal spin-coating speed and, based on the built-in algorithm and the big data accumulated in the early stage, quickly adjusted the subsequent annealing time from the original 15 minutes to 22 minutes. Compared with the abnormal batches without intelligent regulation, for the devices after regulation, the deviation of the photoelectric conversion efficiency was controlled within 2%, while that of the unregulated ones was as high as 8%, effectively ensuring the performance stability among different batches.

[0039] Example 4

[0040] (I) Low-temperature strengthening

[0041] Two groups of experiments were set up, one group added 8% ethylene glycol to the precursor solution, and the other group did not add it as a control. After the two groups of samples were made into devices, they were placed in a low-temperature environment of -20°C to test the photoelectric performance. The photoelectric performance of the device without ethylene glycol declined by 25%, and the short-circuit current density decreased from the initial 20mA / cm 2 Down to 15mA / cm 2 , the open circuit voltage dropped by 0.3 V; while for the device with ethylene glycol added, the decay amplitude was reduced to 12%, and the short circuit current density was maintained at 17.6 mA / cm 2 , the open circuit voltage is only reduced by 0.15V, which significantly improves the low temperature adaptability.

[0042] Example 5

[0043] (I) Self-repair test

[0044] Two groups of perovskite materials with different additives were prepared, one group was integrated with 0.8% disulfide bond small molecules, and the other group was not added. Microcracks were artificially created on the films made of the two groups of materials using microneedles, and then the system containing disulfide bond small molecules was thermally stimulated and heated at 80°C for 30 minutes. Through electrical performance test comparison, in the control group without disulfide bond small molecules, the cracks caused the short-circuit current of the device to almost return to zero; while in the system containing disulfide bond small molecules, the short-circuit current recovered to 40% of the initial value after thermal stimulation, proving the positive role of self-healing properties in maintaining device performance.

[0045] Example 6

[0046] 1. Perovskite material optimization

[0047] Doping modification

[0048] Formamidinium lead bromide (FAPbBr) containing different potassium (K) doping ratios (15%, 25%, 35%) was prepared. 3 ) precursor solution, and at the same time adding yttrium-containing organic compound tri(cyclopentadienyl)yttrium (Y(Cp) 3 ), the doping amounts were set to 0.03%, 0.08%, and 0.12% respectively. 3 , when the K doping ratio is 25% and Y(Cp) 3 When the doping amount is 0.08%, the photoluminescence spectrum shows that the luminescence efficiency of the material is improved by 40%. Through the Hall effect test, the carrier mobility is increased by 30%, indicating that the optimized electronic structure significantly improves the photoelectric properties of the material.

[0049] 2D / 3D composite perovskite construction

[0050] The two-dimensional guanidine lead iodide (GUA) containing 8%, 13%, and 18% was synthesized.2 PbI 4 ) three-dimensional FAPbI 3 composite system. Compared with the single three-dimensional FAPbI 3 , after being placed in the indoor environment for 60 days, the photoelectric performance retention rate of the composite system containing 13% two-dimensional perovskite increased from 70% to 90%, the optical absorption edge redshifted by 10 nm, broadening the optical absorption range, highlighting the synergistic effect of the composite system on stability and light absorption.

[0051] 2. Device Structure Design

[0052] Multilayer Heterojunction Structure

[0053] Fabricate three groups of multilayer heterojunction devices with different structures. One group uses the traditional structure, one group uses the optimized cadmium sulfide (CdS) as the electron transport layer (ETL), poly(3-hexylthiophene) (P3HT) as the hole transport layer (HTL), and titanium dioxide (TiO 2 ) buffer layer structure, and the other group changes the buffer layer thickness to 6 nm. Tests found that compared with the traditional structure, the open-circuit voltage of the optimized structure device increased by 0.15 V, and the fill factor increased from 70% to 78%; for the group with the changed buffer layer thickness, due to the too thick layer resulting in increased interface recombination, the performance decreased, proving that the structural parameters designed in the present invention are the best.

[0054] Micro-Nano Structure Array

[0055] Prepare three groups of micro-nano structure arrays with different nanocolumn sizes, namely 150 nm, 200 nm, and 250 nm in diameter, and all with a height of 800 nm. Optical absorption tests show that the array with a diameter of 200 nm has the strongest optical absorption in the 450 - 750 nm band, with a 12% increase compared to the 150 nm diameter, and an 8% increase compared to the 250 nm diameter; photocurrent tests show that the photocurrent density corresponding to the 200 nm diameter array is 5 mA / cm 2 and 3 mA / cm 2 higher than the other two groups respectively, determining the optimal micro-nano structure parameters.

[0056] 3. Preparation Process Innovation

[0057] Improvement of the Two-Step Solution Spin-Coating Method

[0058] Compared with the traditional two-step spin-coating method, three groups of samples were prepared using the upgraded process. Under different combinations of spin-coating speeds and drying and annealing times, the crystallinity was analyzed by X-ray diffraction (XRD). It was found that the crystallinity of the films prepared under the optimized process was above 90%, while that of the traditional process was only about 70%; scanning electron microscopy (SEM) showed that the surface of the films prepared by the optimized process had no obvious holes and agglomerations, while the traditional process films had more defects, confirming the advantages of the new spin-coating process.

[0059] Innovation in Gas-Phase Assisted Deposition

[0060] Perovskite thin films were prepared by an innovative gas-phase assisted deposition method and a traditional physical vapor deposition method. By comparison, it was found that the thickness uniformity deviation of the thin films prepared by the new method was within ±5%, while that of the traditional method reached ±15%. The surface roughness was detected by atomic force microscopy. The roughness of the thin films prepared by the new method was 3 nm, and that of the traditional method was 10 nm, indicating that the new gas-phase assisted deposition method can significantly improve the quality of the thin films.

[0061] 4. Performance Monitoring and Regulation

[0062] In-situ Photoelectric Performance Monitoring

[0063] Two sets of test systems were built. One set was equipped with an ultrasensitive in-situ photoelectric monitor, and the other set used ordinary monitoring equipment. During the device preparation process, simulating the fluctuations of process parameters, the ultrasensitive monitor could give an alarm and make adjustments when the photoelectric conversion efficiency decreased by 1% and the photocurrent density fluctuated by 3%. Finally, the performance deviation of the device was less than 2%. The ordinary monitoring equipment only responded when the parameters changed more significantly, resulting in a performance deviation of up to 5% for the final device, highlighting the high-precision regulation advantage of the monitoring system of the present invention.

[0064] Microstructure Detection

[0065] A combined device of a scanning tunneling microscope (STM) and a high-resolution transmission electron microscope (HRTEM) was used to compare with the traditional method that only used SEM for detection. When preparing perovskite thin films, the combined device of the present invention detected 5 abnormal microstructures in advance and timely adjusted the process to avoid defect generation. The traditional SEM detection only found 2 abnormalities. The electrical performance of the devices finally made by the present invention was 10% higher than that of the traditional ones, proving the importance of accurate microstructure detection.

[0066] 5. Application Expansion

[0067] On-vehicle Photovoltaic Application

[0068] Photovoltaic devices based on the new perovskite system were installed on two identical electric vehicles. One was the experimental group, and the other was the control group using traditional silicon-based photovoltaic panels. After testing for one month under the same driving route and weather conditions, the charging amount of the experimental group vehicle using the on-vehicle photovoltaic system was 30% more than that of the control group, and the cruising range was increased by 15%, demonstrating the high-efficiency advantage of the new device in the on-vehicle field.

[0069] Virtual Reality Display Application

[0070] Two sets of virtual reality (VR) display devices were produced, one using a display containing a new perovskite light-emitting diode (PeLED) and the other using a traditional organic light-emitting diode (OLED) display. Comparing the display effects, the PeLED display has a 20% improvement in brightness uniformity and a 15% improvement in color saturation, providing users with a clearer and more realistic visual experience.

[0071] 6. Expansion of composite perovskite system

[0072] FAPbBr was mixed in a ratio of 1:1, 2:1, and 3:1, respectively. 3 With CsPbBr 3 The results showed that the photoelectric performance of the composite was the best when the ratio was 2:1, which was better than that of single FAPbBr 3 The luminous efficiency is increased by 30%. In the stability test, the storage time is extended by 1.5 times in a high humidity (85%) environment. Precise control of the compound ratio can maximize the advantages of the compound.

[0073] 7. Intelligent process planning

[0074] Two sets of process planning flows were developed, one set was generated by the intelligent process planning software of the present invention, and the other set was set by manual experience. They were used to prepare 10 batches of devices respectively. Under the process flow generated by the intelligent software, the yield rate increased from 70% set manually to 85%. As the batches increased, the parameters were continuously optimized in combination with machine learning, and the cost was reduced by 15%, which strongly proved the efficiency of intelligent process planning.

[0075] 8. Improved low temperature adaptability

[0076] In two groups of perovskite precursor solutions, one group added 6% of organic additives containing glycerol, and the other group did not add it. Low-temperature tests showed that at -10°C, the photoelectric performance of the device without additives declined by 20%, while that of the device with glycerol only declined by 10%; at -20°C, the group without additives declined by 35%, while the group with glycerol declined by 18%, indicating that additives containing glycerol can effectively alleviate the problem of low-temperature toughness and reduce performance degradation.

[0077] 9. Introduction of self-healing features

[0078] Two groups of perovskite material films were made, one group was integrated with 0.4% selenium-containing organic small molecules, and the other group was not. After artificially creating microcracks and irradiating with light for 2 hours, the electrical properties of the film containing selenium small molecules recovered to 30% of the initial value, while the film without selenium almost did not recover, proving that the self-healing property can extend the life of the device.

[0079] 10. Micro-customization

[0080] Based on the microelectromechanical system (MEMS) process, two sets of micro perovskite optoelectronic devices are fabricated. One set precisely regulates the mold and process parameters, while the other set uses conventional approximate parameters. Tests show that the device size deviation of the precisely regulated group is within ±5 μm, and the electrical performance deviation is less than 3%; the size deviation of the conventional group reaches ±15 μm, and the electrical performance deviation exceeds 8%, highlighting the high-precision advantage of the miniaturized customization of the present invention.

Claims

1. A novel organic-inorganic hybrid perovskite semiconductor optoelectronic device, characterized in that: The perovskite material comprises a methylammonium lead iodide (MAPbI3) system, wherein cesium (Cs) element partially replaces methylammonium (MA), and the doping ratio of Cs is 10%-30%.

2. The optoelectronic device according to claim 1, characterized in that: The optoelectronic device also includes a bismuth-containing organic compound tri(2-ethylhexyl) bismuth (Bi(2-EH)3) accounting for 0.05%-0.15% of the total mass, a two-dimensional / three-dimensional composite perovskite structure, with a three-dimensional MAPbI3 as the skeleton, and a two-dimensional phenethylammonium lead iodide (PEA2PbI4) perovskite layer with a content of 5%-15% grown in situ on the surface or grain boundary.

3. The optoelectronic device according to claim 1, characterized in that: When the optoelectronic device is a solar cell, it has a multi-layer heterojunction structure, with an electron transport layer (ETL) and a hole transport layer (HTL) on both sides of the perovskite absorption layer, respectively. The electron transport layer is a zinc oxide (ZnO) nanoparticle layer with a thickness of 30-50nm, and the hole transport layer is a spirobifluorene-9,9'-diarylamine (Spiro-OMeTAD) layer with a thickness of 100-200nm, and there is an ultra-thin aluminum oxide (Al2O3) buffer layer with a thickness of 1-3nm between the ETL and the perovskite layer.

4. The optoelectronic device according to claim 1, characterized in that: When the optoelectronic device is a photodetector, a periodic nanocolumn array is prepared on the surface of the perovskite active layer, wherein the nanocolumns have a diameter of 100-300 nm and a height of 500-1000 nm.

5. A method for preparing the optoelectronic device according to claim 1, characterized in that: A two-step solution spin coating method is used. In the first step, a lead iodide (PbI2) solution is spin coated on the substrate at a rotation speed of 3000-4000 rpm and dried at 70-90°C for 5-10 minutes; In the second step, a solution containing organic cations and dopants is spin-coated at a rotation speed of 2000-3000 rpm, followed by annealing at 100-120° C. for 10-20 minutes.

6. The preparation method according to claim 5, characterized in that: The solution containing organic cations and dopants includes MAI, CsI and 0.1% Bi(2-EH) 3 mixed in proportion.

7. A method for preparing the optoelectronic device according to claim 1, characterized in that: Using a vapor-assisted deposition process, the perovskite precursor is placed in a high-temperature evaporation source. In a vacuum chamber, the evaporation temperature is maintained at 150-200°C, and argon gas with a flow rate of 20-50sccm is used as a carrier gas to uniformly deposit the precursor vapor on the substrate.

8. A system for monitoring the performance of the optoelectronic device according to claim 1, characterized in that: It includes an in-situ photocurrent density, photovoltage and spectral response joint test system, which tracks the photoelectric conversion efficiency, photocurrent density, photovoltage and spectral response range of the device in the preparation process and aging stage in real time. When the photoelectric conversion efficiency drops by more than 3% or the photocurrent density fluctuates by more than 5%, the subsequent process parameters are automatically adjusted.

9. A method for improving the low temperature adaptability of the optoelectronic device according to claim 1, characterized in that: An organic additive containing ethylene glycol accounting for 5% to 10% of the total raw material mass is added to the perovskite precursor solution to ensure that the photoelectric performance of the device decays by less than 15% in a low temperature environment of -20°C.

10. A method for imparting self-repairing properties to the optoelectronic device of claim 1, characterized in that: Organic small molecules containing disulfide bonds are incorporated into the perovskite material, accounting for 0.5%-1% of the material mass. When microcracks appear inside the material due to stress, the disulfide bonds break and reconnect under heat or light stimulation to repair the microcracks.