Semiconductor device, method for manufacturing the same, and silicone-based resin composition contained therein

Abstract

There is provided a semiconductor device including: a semiconductor package; a heat dissipation member disposed on the semiconductor package; and a thermally conductive layer in direct contact with the semiconductor package and the heat dissipation member, in which the thermally conductive layer includes a silicone-based resin composition, in which the silicone-based resin composition includes an organopolysiloxane; a conductive filler; and a curing catalyst, and a lap shear strength measured according to DIN EN 1465 in the silicone-based resin composition is from 0.30 N / mm2 to 1.8 N / mm2.

Description

Technical Field

[0001] One embodiment relates to a semiconductor device, a method of manufacturing the same, and a silicone-based resin composition included therein. Background Art

[0002] Since most electronic components generate heat during their use, it is necessary to remove heat from the electronic components for the correct operation of the electronic components. In particular, in integrated circuit components such as CPUs used in personal computers, the heat dissipated increases due to an increase in the operating frequency, and thus measures against heat are important issues.

[0003] Therefore, many methods for dissipating such heat have been proposed. In particular, in electronic components that dissipate a large amount of heat, a method of dissipating heat by inserting a thermal conductive material such as thermal grease or a heat sink between the electronic component and a member such as a heat sink has been proposed.

[0004] Korean Patent Application Publication No. 10-2020-0086307 discloses a semiconductor device including a thermal conductive composition. Summary of the Invention

[0005] Technical Problem

[0006] Therefore, the present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor device having improved heat dissipation characteristics and capable of maintaining heat dissipation performance even against external physical impacts, a method of manufacturing the semiconductor device, and a silicone-based resin composition included in the semiconductor device.

[0007] Technical Solution

[0008] According to one aspect of the present invention, the above and other objects can be achieved by providing a semiconductor device including: a semiconductor package; a heat dissipation component disposed on the semiconductor package; and a thermal conductive layer in direct contact with the semiconductor package and the heat dissipation component, wherein the thermal conductive layer includes a silicone-based resin composition, wherein the silicone-based resin composition includes an organopolysiloxane; a conductive filler; and a curing catalyst, and the lap shear strength measured according to DIN EN 1465 in the silicone-based resin composition is 0.30 N / mm 2 to 1.8 N / mm 2 .

[0009] According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, the method comprising: providing a semiconductor package; coating a silicone-based resin composition on the semiconductor package; providing a heat dissipation component on the silicone-based resin composition; and curing the silicone-based resin composition to form a heat conductive layer, wherein the silicone-based resin composition comprises an organopolysiloxane; a conductive filler; and a curing catalyst, and the lap shear strength measured according to DIN EN 1465 in the silicone-based resin composition is 0.30 N / mm 2 to 1.8 N / mm 2 .

[0010] The silicone-based resin composition according to one embodiment comprises an organopolysiloxane; a conductive filler; and a curing catalyst, and the lap shear strength measured according to DIN EN 1465 in the silicone-based resin composition is 0.30 N / mm 2 to 1.8 N / mm 2 .

[0011] In one embodiment, the conductive filler may comprise a first heat conductive powder having a tapped density of less than 2.99 g / cm 3 ; and a second heat conductive powder having a tapped density of greater than 3.01 g / cm 3 .

[0012] In one embodiment, the specific surface area of the first heat conductive powder may be 0.5 m 2 / g to 1.6 m 2 / g, and the specific surface area of the second heat conductive powder may be 0.1 m 2 / g to 0.5 m 2 / g.

[0013] In one embodiment, the weight ratio of the second heat conductive powder to the first heat conductive powder may be 0.2 to 0.7.

[0014] In one embodiment, the joint separation length measured according to DIN EN 1465 may be 0.3 mm or more.

[0015] In one embodiment, the shear modulus obtained by dividing the lap shear strength by the joint separation length may be 0.4 N / mm 3 to 1.8 N / mm 3 .

[0016] In the silicone-based resin composition according to one embodiment, the coverage rate measured by the following measurement method may be 90% or more:

[0017] [Measurement method]

[0018] A silicone-based resin composition is coated on a first silicon substrate with dimensions of 27 mm × 27 mm at a weight of 0.7 g. Then, a second silicon substrate with dimensions equal to or larger than the first silicon substrate is placed on the coated silicone-based resin composition. Then, the silicone-based resin composition is cured while being pressed with a force of 3 kgf. Then, the area of the first silicon substrate in close contact with the second silicon substrate through the silicone-based resin composition is derived, and the coverage rate is the ratio of the area of the first silicon substrate in close contact with the second silicon substrate to the planar area of the first silicon substrate.

[0019] In a silicone-based resin composition according to an embodiment, the spreading thickness measured by the following measurement method can be less than 200 μm:

[0020] [Measurement method]

[0021] The spreading thickness is the thickness of the cured silicone-based resin composition layer provided between the first silicon substrate and the second silicon substrate.

[0022] In a silicone-based resin composition according to an embodiment, the pot life of the silicone-based resin composition can be 10 hours or longer.

[0023] [Beneficial effects]

[0024] A semiconductor device according to an embodiment includes a heat-conducting layer that includes a silicone-based resin composition having an appropriate lap shear strength. Thus, the heat-conducting layer can have an appropriate shear bonding force. In addition, the silicone-based resin composition used to form the heat-conducting layer can have an appropriate joint separation length.

[0025] Therefore, even under shear stress, the heat-conducting layer can have high adhesiveness. That is, since the heat-conducting layer has an appropriate shear bonding force and an appropriate joint separation length, even when shear stress generated due to thermal shock is applied to the heat-conducting layer, an appropriate bonding strength with the semiconductor package and the heat dissipation component can be maintained.

[0026] Therefore, when a physical shock from the outside, such as thermal shock, is applied to a semiconductor device according to an embodiment, shear stress generated due to the difference in thermal expansion rate between the heat dissipation component and the semiconductor package is applied to the heat-conducting layer. Here, since the silicone-based resin composition has an appropriate lap shear strength and an appropriate joint separation length, peeling of the heat-conducting layer that may be caused by shear stress can be prevented.

[0027] Therefore, a semiconductor device and a silicone-based resin composition according to an embodiment can maintain improved heat dissipation performance.

[0028] In addition, the silicone-based resin composition can have improved coverage and an appropriate spreading thickness. Accordingly, the silicone-based resin composition can be uniformly coated to a uniform thickness between the semiconductor package and the heat dissipation component. Thus, the semiconductor device and the silicone-based resin composition according to one embodiment can have improved heat dissipation performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 is a cross-sectional view showing a cross-section of a semiconductor device according to one embodiment.

[0030] Figure 2 is a cross-sectional view showing a process of measuring the lap shear strength and the joint separation length of the silicone-based resin composition. DETAILED DESCRIPTION

[0031] In the description of the embodiments, when describing that each component, surface, layer, or substrate is formed “on” or “under” each component, surface, layer, or substrate, etc., “on” and “under” include both “directly” or “indirectly” formed by inserting another element. In addition, references to the upper or lower portions of each element will be described with reference to the drawings. For explanation, the dimensions of each element in the drawings may be enlarged and do not mean the actual applied dimensions.

[0032] Figure 1 is a cross-sectional view showing a cross-section of a semiconductor device according to one embodiment.

[0033] REFERENCE Figure 1 , a semiconductor device according to one embodiment includes a circuit board 100, a semiconductor package 200, conductive bumps 300, a heat dissipation component 400, and a thermal conductive layer 500.

[0034] The circuit board can support the semiconductor package, the conductive bumps, the heat dissipation component, and the thermal conductive layer.

[0035] The circuit board can include circuit patterns. The circuit board includes an insulating and heat-resistant material, and a plurality of circuit patterns are provided inside its flat body having a predetermined strength. In addition, the circuit board is a connection pad that is electrically connected to the circuit pattern and provided on the body.

[0036] For example, the body of the circuit board includes a thermosetting resin system or a flat plate such as an epoxy resin substrate or a polyimide substrate, or a flat plate having a heat-resistant organic film (such as a liquid crystal polyester film or a polyamide film) attached thereto. The circuit patterns include power wirings and ground wirings for power supply and signal wirings for transmitting signals that are arranged in a pattern shape inside the body. Each wiring can be arranged to be separated from each other by a plurality of interlayer insulating films formed on the upper and lower surfaces of the body.

[0037] The connection pads are exposed from the upper surface of the main body to the outside and are connected to the circuit pattern. Therefore, an external connector connected to the circuit board is electrically connected to the internal circuit pattern through the connection pads.

[0038] Various electronic components can be mounted in the connection pads included in the circuit board. That is to say, the circuit board can be a system board on which electronic components including semiconductor packages and the like are mounted.

[0039] The semiconductor package is mounted on the circuit board. The semiconductor package is disposed on the circuit board. The semiconductor package is connected to the circuit board through conductive bumps.

[0040] The semiconductor package may include a semiconductor chip (which includes an integrated circuit), a semiconductor package substrate connected to the semiconductor chip, a conductive solder for connecting the semiconductor chip and the semiconductor package substrate, and a sealing member for sealing the semiconductor chip and the conductive solder. The sealing member may include resin composition such as epoxy resin molding.

[0041] The semiconductor package can be a storage device, a central processing unit, etc.

[0042] Conductive bumps are provided between the semiconductor package and the circuit board. The conductive bumps are electrically connected to the semiconductor package and the circuit board. The conductive bumps are electrically connected to the semiconductor package and the connection pads.

[0043] A heat dissipation member is provided on the semiconductor package. The heat dissipation member can cover the semiconductor package. The heat dissipation member can be bonded to the circuit board. The heat dissipation member can cover the side surface of the semiconductor package.

[0044] The heat dissipation member can include a conductor. The heat dissipation member can include a metal. The heat dissipation member can be thermally connected to an external heat sink.

[0045] In addition, the heat dissipation member can protect the semiconductor package from the influence of external physical impact. The heat dissipation member can protect the semiconductor package from the influence of external electromagnetic waves. That is to say, the heat dissipation member can block external electromagnetic waves.

[0046] A thermal conductive layer is provided between the semiconductor package and the heat dissipation member. The thermal conductive layer is in direct contact with the semiconductor package and the heat dissipation member. The thermal conductive layer can be in close contact between the semiconductor package and the heat dissipation member.

[0047] The thermal conductive layer is thermally connected to the semiconductor package and the heat dissipation member. That is to say, the thermal conductive layer transfers the heat generated by the semiconductor package to the heat dissipation member.

[0048] The thickness of the heat-conducting layer can be from about 1 μm to about 100 μm. The thickness of the heat-conducting layer can be from about 2 μm to about 70 μm. The thickness of the heat-conducting layer can be from about 5 μm to about 60 μm. The thickness of the heat-conducting layer can be from about 10 μm to about 40 μm.

[0049] The heat-conducting layer contains a silicone-based resin composition. The silicone-based resin composition can be thermosetting.

[0050] The silicone-based resin composition can contain an organopolysiloxane.

[0051] The organopolysiloxane can be represented by the following average compositional formula (1):

[0052] R 1 a SiO b (1)

[0053] In the compositional formula (1), R 1 can represent a hydrogen atom, a hydroxyl group, or a group selected from one or more saturated or unsaturated monovalent hydrocarbon groups having 1 to 18 carbon atoms, and a can be from about 1.8 to about 2.2. a + b can be from about 3.5 to about 8.

[0054] More specifically, a + b can be 4.

[0055] In the compositional formula (1), the saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms represented by R 1 can be, for example, an alkyl group such as methyl, ethyl, propyl, hexyl, octyl, decyl, dodecyl, tetradecyl, hexadecyl, or octadecyl; a cycloalkyl group such as cyclopentyl or cyclohexyl; an alkenyl group such as vinyl or allyl; an aryl group such as phenyl or tolyl; an aralkyl group such as 2-phenylethyl or 2-methyl-2-phenylethyl; or a halogenated hydrocarbon group such as 3,3,3-trifluoropropyl, 2-(perfluorobutyl)ethyl, 2-(perfluorooctyl)ethyl, or p-chlorophenyl.

[0056] The weight-average molecular weight (Mw) of the organopolysiloxane can be from about 40,000 g / mol to about 80,000 g / mol. The weight-average molecular weight (Mw) of the organopolysiloxane can be from about 30,000 g / mol to about 100,000 g / mol. The weight-average molecular weight (Mw) of the organopolysiloxane can be from about 500 g / mol to about 10,000 g / mol. The weight-average molecular weight of the organopolysiloxane can be from about 700 g / mol to about 7,000 g / mol. The weight-average molecular weight of the organopolysiloxane can be from about 1,000 g / mol to about 5,000 g / mol. The weight-average molecular weight of the organopolysiloxane can be from about 1,500 to about 3,000 g / mol. The weight-average molecular weight can be measured based on polystyrene.

[0057] In the organopolysiloxane, the kinematic viscosity at 25 °C can be 10 to 100,000 mm 2 / s. In the organopolysiloxane, the kinematic viscosity at 25 °C can be 20,000 to 100,000 mm 2 / s. In the organopolysiloxane, the kinematic viscosity at 25 °C can be about 30 to about 10,000 mm 2 / s. The kinematic viscosity of the organopolysiloxane can be the value measured with an Ostwald viscometer at 25 °C.

[0058] Since the organopolysiloxane has the weight-average molecular weight and kinematic viscosity as described above, the heat-conducting layer can have appropriate bonding strength and appropriate elasticity. In particular, since the organopolysiloxane has the weight-average molecular weight and kinematic viscosity as described above, the heat-conducting layer can easily withstand the stress in the lateral direction.

[0059] The organopolysiloxane can contain a first organopolysiloxane.

[0060] The first organopolysiloxane can contain an alkenyl group bonded to a silicon atom, and the number of alkenyl groups in one molecule of the first organopolysiloxane can be at least two or more. The number of alkenyl groups in one molecule of the first organopolysiloxane can be 2 to 10. The number of alkenyl groups in one molecule of the first organopolysiloxane can be 2 to 5. The number of alkenyl groups in one molecule of the first organopolysiloxane can be 2.

[0061] The first organopolysiloxane can be represented by the following average compositional formula (2):

[0062] R 1 a R 2 c SiO b (2)

[0063] In the compositional formula (2), R 1 can be a hydrogen atom, a hydroxyl group, or a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms, and R 2 can be an alkenyl group. In the compositional formula (2), a + c can be about 1.8 to about 2.2, and a + b + c can be about 3.5 to about 8. In the compositional formula (2), a + b + c can be about 4. In the compositional formula (2), a can be about 1.8 to about 2.2. In addition, c can be 0.0001 to 0.1.

[0064] The first organopolysiloxane can be represented by the following chemical formula (3).

[0065] [Chemical formula 3]

[0066]

[0067] In Chemical Formula 3, R 1 may be a hydrogen atom, a hydroxyl group, or a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms, and R 2 may be an alkenyl group. Further, in Chemical Formula 3, n may be from 1 to 1500, and m may be from 0 to 20. In Chemical Formula 3, n may be from 10 to 1000, and m may be from 0 to 20.

[0068] The first organopolysiloxane may be represented by the following Chemical Formula (4):

[0069] [Chemical Formula 4]

[0070]

[0071] In Chemical Formula 4, n may be from 1 to 1500. n may be from 10 to 1000.

[0072] The weight-average molecular weight (Mw) of the first organopolysiloxane may be from about 500 g / mol to about 10000 g / mol. The weight-average molecular weight of the first organopolysiloxane may be from about 700 g / mol to about 7000 g / mol. The weight-average molecular weight of the first organopolysiloxane may be from about 1000 g / mol to about 5000 g / mol. The weight-average molecular weight of the first organopolysiloxane may be from about 1500 to about 3000 g / mol. The weight-average molecular weight may be measured based on polystyrene.

[0073] In the organopolysiloxane, the kinematic viscosity at 23 °C may be from 10 to 100000 cPs. In the first organopolysiloxane, the kinematic viscosity at 23 °C may be from about 30 to about 50000 cPs. In the first organopolysiloxane, the kinematic viscosity at 23 °C may be from about 10000 to about 40000 cPs. The kinematic viscosity of the first organopolysiloxane may be a value measured with an Ostwald viscometer at 23 °C.

[0074] The organopolysiloxane may contain a second organopolysiloxane.

[0075] The second organopolysiloxane may contain a hydrogen group bonded to a silicon atom. The number of hydrogen groups per molecule of the second organopolysiloxane may be from 1 to 10. The number of hydrogen groups per molecule of the second organopolysiloxane may be from 2 to 10. The number of hydrogen groups per molecule of the second organopolysiloxane may be from 2 to 5. The number of hydrogen groups per molecule of the second organopolysiloxane may be 2.

[0076] The second organopolysiloxane may be represented by the following Chemical Formula 5:

[0077] [Chemical Formula 5]

[0078]

[0079] In Chemical Formula 5, R 1 may be a hydrogen atom, a hydroxyl group, or a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms, and R 3 may be a hydrogen atom. Further, in Chemical Formula 5, n may be from 1 to 1500, and m may be from 0 to 20. In Chemical Formula 5, n may be from 10 to 1000, and m may be from 0 to 20. In Chemical Formula 5, n may be from 1 to 1500, and m may be 0.

[0080] The second organopolysiloxane may be represented by the following Chemical Formula 6:

[0081] [Chemical Formula 6]

[0082]

[0083] The viscosity of the second organopolysiloxane at about 23 °C may be from about 500 cPs to about 5000 cPs. The viscosity of the second organopolysiloxane at about 23 °C may be from about 500 cPs to about 3000 cPs. The viscosity of the second organopolysiloxane at about 23 °C may be from about 500 cPs to about 2000 cPs.

[0084] The organopolysiloxane may further contain a third organopolysiloxane. The third organopolysiloxane may be represented by the following Chemical Formula 7:

[0085] [Chemical Formula 7]

[0086]

[0087] In Chemical Formula 7, R 1 may be a hydrogen atom, a hydroxyl group, or a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms, and R 3 may be a hydrogen atom. Further, in Chemical Formula 7, n may be from 1 to 1500, and m may be from 1 to 500. In Chemical Formula 7, n may be from 10 to 1000, and m may be from 1 to 100.

[0088] The third organopolysiloxane may be represented by the following Chemical Formula 8:

[0089] [Chemical Formula 8]

[0090]

[0091] In Chemical Formula 8, n may be from 1 to 1500, and m may be from 1 to 500. In Chemical Formula 8, n may be from 10 to 1000, and m may be from 1 to 100.

[0092] The viscosity of the third organopolysiloxane at about 23 °C can be from about 50 cPs to about 1000 cPs. The viscosity of the third organopolysiloxane at about 23 °C can be from about 100 cPs to about 500 cPs. The viscosity of the third organopolysiloxane at about 23 °C can be from about 100 cPs to about 400 cPs.

[0093] The ratio of the viscosity of the first organopolysiloxane to the viscosity of the second organopolysiloxane can be from 10:1 to 40:1.

[0094] In addition, the ratio of the viscosity of the second organopolysiloxane to the viscosity of the third organopolysiloxane can be from 2:1 to 10:1.

[0095] Based on 100 parts by weight of the total organopolysiloxane, the content of the first organopolysiloxane can be from about 60 parts by weight to about 90 parts by weight. Based on 100 parts by weight of the total organopolysiloxane, the content of the first organopolysiloxane can be from about 70 parts by weight to about 85 parts by weight. Based on 100 parts by weight of the total organopolysiloxane, the content of the first organopolysiloxane can be from about 75 parts by weight to about 85 parts by weight.

[0096] Based on 100 parts by weight of the first organopolysiloxane, the content of the second organopolysiloxane can be from about 10 parts by weight to about 40 parts by weight. Based on 100 parts by weight of the first organopolysiloxane, the content of the second organopolysiloxane can be from about 10 parts by weight to about 30 parts by weight. Based on 100 parts by weight of the first organopolysiloxane, the content of the second organopolysiloxane can be from about 12 parts by weight to about 23 parts by weight.

[0097] Based on 100 parts by weight of the first organopolysiloxane, the content of the third organopolysiloxane can be from about 3 parts by weight to about 20 parts by weight. Based on 100 parts by weight of the first organopolysiloxane, the content of the third organopolysiloxane can be from about 3 parts by weight to about 15 parts by weight. Based on 100 parts by weight of the first organopolysiloxane, the content of the third organopolysiloxane can be from about 4 parts by weight to about 10 parts by weight.

[0098] Since the silicone-based resin composition contains the first organopolysiloxane, the second organopolysiloxane, and the third organopolysiloxane within the same ranges as described above, the thermal conductive layer can have appropriate bonding strength and appropriate elasticity. In particular, since the organopolysiloxane has the same content and viscosity as described above, the silicone-based resin composition can spread evenly during the coating process.

[0099] The silicone-based resin composition contains a thermal conductive filler.

[0100] The thermal conductive filler can include inorganic particles. The thermal conductive filler can include metal particles. The thermal conductive filler can include silver. The thermal conductive filler can include silver powder.

[0101] The thermal conductive filler may include a second thermal conductive powder and a second conductive powder.

[0102] The first conductive powder may include a first silver powder.

[0103] The tapped density of the first silver powder may be less than about 3.0 g / cm 3 . The tapped density of the first silver powder may be less than about 2.99 g / cm 3 . The tapped density of the first silver powder may be less than about 2.97 g / cm 3 . The tapped density of the first silver powder may be less than about 2.95 g / cm 3 . The minimum value of the tapped density of the first silver powder may be about 2.0 g / cm 3 .

[0104] To obtain the tapped density, weigh 100 g of silver powder and gently pour it into a 100 ml measuring flask through a funnel. Then, place the measuring flask on a tapped density measuring device and compact the silver powder by dropping it 600 times at a rate of 60 times per minute from a falling distance of 20 mm. The tapped density can be calculated based on the volume of the compacted powder.

[0105] The specific surface area of the first silver powder may exceed about 2.0 m 2 / g. The specific surface area of the first silver powder may exceed about 3.0 m 2 / g. The specific surface area of the first silver powder may exceed about 5.0 m 2 / g. The specific surface area of the first silver powder may exceed about 6.0 m 2 / g. The specific surface area of the first silver powder may exceed about 7.0 m 2 / g. The specific surface area of the first silver powder may exceed about 8.0 m 2 / g. The maximum value of the specific surface area of the first silver powder may be about 20 m 2 / g.

[0106] To obtain the specific surface area, take about 2 g of silver powder as a sample. After degassing at 60 ± 5 °C for 10 minutes, measure the total surface area using an automatic specific surface area measuring device (BET method). Next, weigh the amount of the sample and calculate the specific surface area according to the following equation:

[0107] Specific surface area (m 2 / g) = Total surface area (m 2 ) / Sample amount (g)

[0108] The aspect ratio of the silver particles included in the first silver powder may be about 2 to 5. The aspect ratio of the silver particles included in the first silver powder may be about 2.5 to about 4.

[0109] The silver particles contained in the first silver powder can have an angular shape.

[0110] The first silver powder can be surface-treated with a surface treatment agent. The surface treatment agent can contain C10 to C20 fatty acids. Examples of the fatty acids include capric acid, lauric acid, myristic acid, palmitic acid, stearic acid, arachidic acid, myristoleic acid, palmitoleic acid, sapienic acid, oleic acid, elaidic acid, isolenic acid, linoleic acid, elaidic linoleic acid, arachidonic acid, eicosapentaenoic acid, α-linolenic acid, etc.

[0111] The ignition loss (Ig loss) of the first silver powder can be less than about 0.8 wt%. The Ig loss of the first silver powder can be less than about 0.7 wt%. The Ig loss of the first silver powder can be less than about 0.6 wt%.

[0112] The ignition loss can be measured at about 538 °C in about 1 hour.

[0113] Even with a small amount of the surface treatment agent, the surface of the first silver powder can be effectively treated. That is, the first silver powder has a relatively low tap density and a large specific surface area, and can be surface-treated with a small amount of the surface treatment agent.

[0114] Therefore, the first silver powder can be uniformly dispersed in the organopolysiloxane, and the thermal connection of the conductive filler can be improved. That is, due to the improved dispersibility of the first silver powder, the first silver powder can be added to the organopolysiloxane in a high content. In addition, since the first silver powder has a large surface area such as a flake or polygonal shape, and the layer coated with the surface treatment agent is thin, the contact characteristics between the conductive fillers can be improved.

[0115] Therefore, the first silver powder can improve the thermal conductivity of the silicone-based resin composition.

[0116] The average particle size of the first silver powder can be about 0.5 μm to about 4 μm. The average particle size of the first silver powder can be about 1 μm to about 3 μm. The average particle size of the first silver powder can be about 1.5 μm to about 2.5 μm.

[0117] Based on 100 parts by weight of the organopolysiloxane, the silicone-based resin composition can contain about 300 parts by weight to about 1000 parts by weight of the first silver powder. Based on 100 parts by weight of the organopolysiloxane, the silicone-based resin composition can contain about 400 parts by weight to about 900 parts by weight of the first silver powder. Based on 100 parts by weight of the organopolysiloxane, the silicone-based resin composition can contain about 500 parts by weight to about 800 parts by weight of the first silver powder.

[0118] The second conductive powder can include the first silver powder.

[0119] The tapped density of the second silver powder can be greater than about 3.0 g / cm 3 The tapped density of the second silver powder can be greater than about 3.01 g / cm 3 The tapped density of the second silver powder can be greater than about 4 g / cm 3 The tapped density of the second silver powder can be greater than about 5 g / cm 3 The tapped density of the second silver powder can be greater than about 5.5 g / cm 3 The maximum value of the tapped density of the second silver powder can be about 9 g / cm 3 。

[0120] The specific surface area of the second silver powder can be less than about 0.6 m 2 / g. The specific surface area of the second silver powder can be less than about 0.5 m 2 / g. The specific surface area of the second silver powder can be less than about 0.45 m 2 / g. The specific surface area of the second silver powder can be less than about 0.4 m 2 / g. The specific surface area of the second silver powder can be less than about 0.5 m 2 / g. The maximum value of the specific surface area of the second silver powder can be about 0.05 m 2 / g.

[0121] The aspect ratio of the silver particles contained in the second silver powder can be about 1 to 2. The aspect ratio of the silver particles contained in the second silver powder can be about 1.2 to about 1.7.

[0122] The silver particles contained in the second silver powder can have a spherical shape.

[0123] The second silver powder can be surface-treated with C10 to C20 fatty acids.

[0124] The ignition loss (Ig loss) of the second silver powder can be less than about 0.8 wt%. The Ig loss of the second silver powder can be less than about 0.7 wt%. The Ig loss of the second silver powder can be less than about 0.6 wt%.

[0125] The average particle size of the second silver powder can be about 1.5 μm to about 5 μm. The average particle size of the second silver powder can be about 2 μm to about 4 μm. The average particle size of the second silver powder can be about 2.5 μm to about 3.5 μm.

[0126] Based on 100 parts by weight of the organopolysiloxane, the silicone-based resin composition may contain from about 100 parts by weight to about 800 parts by weight of the second silver powder. Based on 100 parts by weight of the organopolysiloxane, the silicone-based resin composition may contain from about 150 parts by weight to about 700 parts by weight of the second silver powder. Based on 100 parts by weight of the organopolysiloxane, the silicone-based resin composition may contain from about 170 parts by weight to about 600 parts by weight of the second silver powder.

[0127] In addition, the weight ratio of the first silver powder to the second silver powder may be from about 1:1 to about 5:1. The weight ratio of the first silver powder to the second silver powder may be from about 2:1 to about 4:1. The weight ratio of the first silver powder to the second silver powder may be from about 2:1 to about 3:1.

[0128] Due to the above characteristics of the first silver powder and the second silver powder, the heat-conducting layer can have high thermal conductivity, appropriate bonding strength, and appropriate elasticity. In addition, due to the above characteristics of the first silver powder and the second silver powder, the heat-conducting layer can easily withstand the stress in the lateral direction. In addition, the first silver powder and the second silver powder are appropriately mixed so that the curable silicone resin composition can achieve high thermal conductivity, has improved fluidity, and can be spread evenly.

[0129] In particular, since the first silver powder is surface-treated with a surface treatment agent, the organopolysiloxane can have high dispersibility.

[0130] Since the first silver powder is uniformly dispersed in the organopolysiloxane, the lap shear strength of the silicone-based resin composition can be improved. In addition, since the first silver powder is surface-treated with even a small amount of the surface treatment agent, the first silver powder has improved contact characteristics, thereby improving the thermal conductivity of the silicone-based resin composition.

[0131] In addition, since the conductive filler is a mixture of the first silver powder having a relatively low tapped density and the second silver powder having a relatively high tapped concentration, the silicone-based resin composition can have appropriate lap shear strength due to the second silver powder and improved thermal conductivity due to the improved contact characteristics of the first silver powder.

[0132] The silicone-based resin composition may further contain a tackifier.

[0133] The tackifier may include alkoxysilane. In addition, the tackifier may contain an epoxy group. The tackifier may be at least one selected from the following: 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, or 3-glycidoxypropyltriethoxysilane.

[0134] Based on 100 parts by weight of the organopolysiloxane, the silicone-based resin composition may contain a tackifier in an amount of about 1 part by weight to about 20 parts by weight. Based on 100 parts by weight of the organopolysiloxane, the silicone-based resin composition may contain a tackifier in an amount of about 1 part by weight to about 10 parts by weight. Based on 100 parts by weight of the organopolysiloxane, the silicone-based resin composition may contain a tackifier in an amount of about 2 parts by weight to about 8 parts by weight.

[0135] The tackifier can improve the adhesion between the organopolysiloxane and the metal. The tackifier can improve the bonding force between the organopolysiloxane and the silver powder. In addition, the tackifier can improve the adhesion between the heat-conducting layer and the heat-dissipating component. In addition, the tackifier can improve the adhesion between the semiconductor package and the heat-dissipating component.

[0136] The silicone-based resin composition contains a curing catalyst. The curing catalyst accelerates the curing of the silicone-based resin composition.

[0137] The curing catalyst may include a platinum-based catalyst.

[0138] Examples of the curing catalyst include organotitanates such as platinum-divinyltetramethyldisiloxane complex, tetrabutyl titanate, and tetraisopropyl titanate; organotitanium chelate compounds such as diisopropoxybis(acetoacetate)titanium and diisopropoxybis(ethyl acetoacetate)titanium; organoaluminum compounds such as tris(acetylacetone)aluminum and tris(ethyl acetoacetate)aluminum; organozirconium compounds such as tetra(acetylacetone)zirconium and zirconium tetrabutyrate; organotin compounds such as dibutyltin dioctoate, dibutyltin dilaurate, and butyltin 2-ethylhexanoate; metal salts of organic carboxylic acids such as tin naphthenate, tin oleate, tin butyrate, cobalt naphthenate, and zinc stearate; amine compounds such as hexylamine and dodecylamine phosphate and their salts; quaternary ammonium salts such as benzyltriethylammonium acetate; lower fatty acid salts of alkali metals such as potassium acetate; dialkylhydroxylamines such as dimethylhydroxylamine and diethylhydroxylamine; and guanidine group-containing organosilicon compounds.

[0139] Based on 100 parts by weight of the organopolysiloxane, the silicone-based resin composition may contain a curing catalyst in an amount of about 0.01 part by weight to about 5 parts by weight. Based on 100 parts by weight of the organopolysiloxane, the silicone-based resin composition may contain a curing catalyst in an amount of about 0.03 part by weight to about 3 parts by weight. Based on 100 parts by weight of the organopolysiloxane, the silicone-based resin composition may contain a curing catalyst in an amount of about 0.1 part by weight to about 2 parts by weight.

[0140] The silicone-based resin composition may further contain a reaction inhibitor. The reaction inhibitor may be at least one selected from the following: acetylenic compounds such as 2-methyl-3-butyn-2-ol, 2-phenyl-3-butyn-2-ol, and 1-ethynyl-1-cyclohexanol; enyne compounds such as 3-methyl-3-penten-1-yne and 3,5-dimethyl-3-hexen-1-yne; curing reaction inhibitors such as hydrazine-based compounds, phosphine-based compounds, and thiol-based compounds; and the like.

[0141] Based on 100 parts by mass of the organopolysiloxane, the content of the reaction inhibitor may be about 0.0001 to about 10 parts by mass.

[0142] The silicone-based resin composition is not particularly limited and can be prepared according to a conventionally known method for preparing a silicone composition.

[0143] For example, the silicone-based resin composition can be prepared by mixing an organopolysiloxane, a conductive filler, a tackifier, a curing catalyst, a curing reaction inhibitor, etc. for 30 minutes to 4 hours using a mixer such as Trimix, Twinmix, and a planetary mixer (all manufactured by Inoue Seisakusho Co., Ltd., registered trademarks); Ultramixer (manufactured by Mizuho Kogyo Co., Ltd., registered trademark); or Hibis Disper Mix (manufactured by Primix Co., Ltd., registered trademark). During the mixing process, the process temperature can be about 0°C to about 25°C.

[0144] A semiconductor device according to one embodiment can be manufactured by the following method.

[0145] First, a semiconductor package is mounted on a circuit board through a conductive bump. Next, the silicone-based resin composition is coated on the semiconductor package. Alternatively, the silicone-based resin composition can be coated on the lower surface of a heat dissipation component.

[0146] Next, the heat dissipation component covers the semiconductor package. Thus, the coated silicone-based resin composition is in direct contact with the lower surface of the heat dissipation component and the upper surface of the semiconductor package, and the curable silicone resin composition is cured at a temperature of about 80°C or higher under a state where a pressure of about 0.01 MPa is applied.

[0147] The pressure during the curing process can be about 0.01 MPa or greater. The pressure during the curing process can be about 0.05 MPa to about 100 MPa. The pressure during the curing process can be about 0.1 MPa to about 100 MPa.

[0148] The temperature during the curing process can be from about 110 °C to about 300 °C. The temperature during the curing process can be from about 120 °C to about 300 °C. The temperature during the curing process can be from about 140 °C to about 300 °C.

[0149] The curing time during the curing process can be from about 30 minutes to about 5 hours.

[0150] Thus, a heat-conducting layer can be formed.

[0151] The heat-conducting layer can have a lap shear strength.

[0152] The lap shear strength of the heat-conducting layer can be from about 0.25 N / mm 2 to about 1.8 N / mm 2 . The lap shear strength of the heat-conducting layer can be from about 0.30 N / mm 2 to about 1.5 N / mm 2 . The lap shear strength of the heat-conducting layer can be from about 0.30 N / mm 2 to about 1.2 N / mm 2 . The lap shear strength of the heat-conducting layer can be from about 0.60 N / mm 2 to about 1.1 N / mm 2 .

[0153] In addition, the silicone-based resin composition can have a lap shear strength.

[0154] The lap shear strength of the silicone-based resin composition can be from about 0.25 N / mm 2 to about 1.8 N / mm 2 . The lap shear strength of the silicone-based resin composition can be from about 0.30 N / mm 2 to about 1.5 N / mm 2 . The lap shear strength of the silicone-based resin composition can be from about 0.30 N / mm 2 to about 1.2 N / mm 2 . The lap shear strength of the silicone-based resin composition can be from about 0.60 N / mm 2 to about 1.1 N / mm 2 .

[0155] In the silicone-based resin composition, the lap shear strength can be measured according to DIN EN 1465. Similarly, the lap shear strength in the heat-conducting layer can be measured according to DIN EN 1465.

[0156] The heat-conducting layer can have a joint separation length.

[0157] The joint separation length of the heat-conducting layer can be greater than about 0.3 mm. The joint separation length of the heat-conducting layer can be greater than about 0.35 mm. The joint separation length of the heat-conducting layer can be greater than 0.4 mm. The joint separation length of the heat-conducting layer can be greater than 0.45 mm. The joint separation length of the heat-conducting layer can be greater than 0.5 mm. In the heat-conducting layer, the maximum value of the joint separation length can be about 2 mm.

[0158] The silicone-based resin composition can have a joint separation length.

[0159] The joint separation length of the silicone-based resin composition can be greater than about 0.3 mm. The joint separation length of the silicone-based resin composition can be greater than about 0.35 mm. The joint separation length of the silicone-based resin composition can be greater than 0.4 mm. The joint separation length of the silicone-based resin composition can be greater than 0.45 mm. The joint separation length of the silicone-based resin composition can be greater than 0.5 mm. In the silicone-based resin composition, the maximum value of the joint separation length can be about 2 mm.

[0160] In the silicone-based resin composition, the joint separation length can be measured according to DIN EN 1465. Similarly, in the heat-conducting layer, the joint separation length can be measured according to DIN EN 1465.

[0161] Figure 2 is a cross-sectional view showing the process of measuring the lap shear strength and joint separation length of the silicone-based resin composition.

[0162] Refer to Figure 2 , the lap shear strength and joint separation length of the silicone-based resin composition can be measured by the following method.

[0163] The silicone-based resin composition is coated on a predetermined area of the first nickel plate 10 to a thickness of about 200 μm, and the second nickel plate 20 covers the coated silicone-based resin composition. Next, the silicone-based resin composition is cured at about 150 °C for about 2 hours. The area coated with the silicone-based resin composition can be about 2.5 cm × 1.25 cm.

[0164] Next, the first and second nickel plates are horizontally pulled in opposite directions by a universal testing machine. Here, the stress of the first and second nickel plates in the horizontal direction is measured according to the length of the horizontal deformation.

[0165] The lap shear strength can be a value obtained by dividing the maximum value of the stress applied to the first and second nickel plates by the coated area of the silicone-based resin composition.

[0166] In addition, the joint separation length may be the length deformed in the horizontal direction under the maximum value of the stress applied to the first and second nickel plates.

[0167] The lap shear strength and the joint separation length of the heat-conducting layer can be measured by the following method.

[0168] The heat dissipation component and the semiconductor package are horizontally pulled in opposite directions by a universal testing machine. Here, the stress in the horizontal direction of the heat dissipation component and the semiconductor package is measured based on the length of the horizontal deformation.

[0169] The lap shear strength may be the value obtained by dividing the maximum value of the stress applied to the heat dissipation component and the semiconductor package by the planar area of the heat-conducting layer.

[0170] In addition, the joint separation length may be the length deformed in the horizontal direction under the maximum value of the stress applied to the heat dissipation component and the semiconductor package.

[0171] In addition, the heat-conducting layer may have a shear modulus.

[0172] The shear modulus is the value obtained by dividing the lap shear strength of the heat-conducting layer by the joint separation length.

[0173] The shear modulus can be calculated by the following equation:

[0174] [Equation 1]

[0175] Shear modulus = Lap shear strength / Joint separation length

[0176] The shear modulus of the heat-conducting layer can be about 0.3 N / mm 3 to about 2.0 N / mm 3 . The shear modulus of the heat-conducting layer can be about 0.4 N / mm 3 to about 1.8 N / mm 3 . The shear modulus of the heat-conducting layer can be about 0.5 N / mm 3 to about 1.7 N / mm 3 .

[0177] In addition, the silicone-based resin composition may have a shear modulus.

[0178] The shear modulus of the silicone-based resin composition can be about 0.3 N / mm 3 to about 2.0 N / mm 3 . The shear modulus of the silicone-based resin composition can be about 0.4 N / mm 3 to about 1.8 N / mm 3 . The shear modulus of the silicone-based resin composition can be about 0.5 N / mm 3 to about 1.7 N / mm 3 .

[0179] Since the silicone-based resin composition and the heat-conductive layer have a shear modulus, when a thermal shock is applied to the heat-conductive layer, the silicone-based resin composition and the heat-conductive layer can suppress deformation and peeling caused by shear stress.

[0180] That is, since the silicone-based resin composition has a shear modulus, it can easily recover from deformation caused by an external thermal shock to the heat-conductive layer.

[0181] The silicone-based resin composition can have a coverage rate.

[0182] The coverage rate of the silicone-based resin composition can be about 85% or more. The coverage rate of the silicone-based resin composition can be about 90% or more. The coverage rate of the silicone-based resin composition can be about 92% or more.

[0183] The silicone-based resin composition can have a spreading thickness.

[0184] The spreading thickness of the silicone-based resin composition can be less than 200 μm. The spreading thickness of the silicone-based resin composition can be about 100 μm to about 200 μm.

[0185] The coverage rate and the spreading thickness can be measured by the following method.

[0186] Apply about 1 g of the silicone-based resin composition to the entire surface of a first silicon substrate having a size of about 27 mm × 27 mm. Next, place a second silicon substrate equal to or larger than the first silicon substrate on the applied silicone-based resin composition and press it with a force of about 3 kgf. In the state pressed in this way, the silicone-based resin composition coated between the first silicon substrate and the second silicon substrate is temporarily cured at about 135 °C for about 10 minutes. Next, cure the temporarily cured composition at about 150 °C for about 2 hours. Next, measure the area of the first silicon substrate and the second silicon substrate in close contact by an ultrasonic device (scanning acoustic tomography, ultrasonic flaw detection system). The coverage rate is the ratio of the area in close contact with the second silicon substrate to the total area of the first silicon substrate.

[0187] In addition, the thickness of the cured resin composition layer can be the spreading thickness.

[0188] Since the silicone-based resin composition has the coverage rate and the spreading thickness as described above, the heat-conductive layer can be in close contact with the semiconductor package and the heat dissipation component over a large area and can have high heat conduction characteristics.

[0189] The viscosity of the silicone-based resin composition can be from about 50 cPs to about 400 cPs. The viscosity of the silicone-based resin composition can be from about 50 cPs to about 300 cPs. The viscosity of the silicone-based resin composition can be from about 50 cPs to about 200 cPs. The viscosity of the silicone-based resin composition can be from about 50 cPs to about 150 cPs.

[0190] The viscosity of the silicone-based resin composition can be measured by the DIN EN ISO 3219 method at about 25 °C using a rheometer MCR302 (manufacturer: Anton Paar GmbH) as a plate with a diameter of about 25 mm. Here, in order to measure the viscosity, a shear rate of about 10 (1 / s) can be applied.

[0191] The silicone-based resin composition has the above viscosity, thus having appropriate coverage and spreading thickness.

[0192] The pot life of the silicone-based resin composition can exceed about 10 hours. The pot life of the silicone-based resin composition can be from about 10 hours to about 15 hours. The pot life of the silicone-based resin composition can be from about 10 hours to about 15 hours.

[0193] The pot life can be measured by the following method.

[0194] Allow the silicone-based resin composition to stand at room temperature. Next, measure the time when the viscosity of the silicone-based resin composition increases by 50% compared to its initial viscosity as the pot life.

[0195] The silicone-based resin composition can have a thermal conductivity.

[0196] The thermal conductivity of the silicone-based resin composition can be greater than about 5 W / m·K. The thermal conductivity of the silicone-based resin composition can be greater than about 5.5 W / m·K. The thermal conductivity of the silicone-based resin composition can be greater than about 6 W / m·K. The thermal conductivity of the silicone-based resin composition can be greater than about 6.5 W / m·K. The maximum value of the thermal conductivity of the silicone-based resin composition can be about 30 W / m·K.

[0197] The thermal conductivity can be measured by the following method.

[0198] First, mold the silicone-based resin composition into a size of about 30 mm × 30 mm × 4 mm by hot pressing, and then cure it at about 150 °C for about 2 hours to manufacture a sample. The thermal conductivity of the sample can be measured by the ISO22007-2 method.

[0199] In addition, the thermal conductivity of the thermal conductive layer can be greater than about 5 W / m·K. The thermal conductivity of the thermal conductive layer can be greater than about 5.5 W / m·K. The thermal conductivity of the thermal conductive layer can be greater than about 6 W / m·K. The thermal conductivity of the thermal conductive layer can be greater than about 6.5 W / m·K. The maximum value of the thermal conductivity of the thermal conductive layer can be about 30 W / m·K.

[0200] The silicone-based resin composition can have an appropriate lap shear strength. Accordingly, the thermal conductive layer can have an appropriate shear bonding force. In addition, the silicone-based resin composition for forming the thermal conductive layer can have an appropriate joint separation length.

[0201] Accordingly, even under shear stress, the thermal conductive layer can have high adhesiveness. That is, since the thermal conductive layer has an appropriate shear bonding force and an appropriate joint separation length, even when shear stress is applied to the thermal conductive layer, an appropriate bonding strength with the semiconductor package and the heat dissipation component can be maintained.

[0202] Accordingly, when an external physical shock (such as a thermal shock) is applied to the semiconductor device according to one embodiment, shear stress generated due to the difference in the thermal expansion rate between the heat dissipation component and the semiconductor package is applied to the thermal conductive layer.

[0203] Here, since the silicone-based resin composition has an appropriate lap shear strength and an appropriate joint separation length, peeling of the thermal conductive layer that may be caused by shear stress can be prevented.

[0204] Accordingly, the semiconductor device and the silicone-based resin composition according to the embodiment can maintain improved heat dissipation performance.

[0205] In addition, the silicone-based resin composition can have improved coverage and an appropriate spreading thickness. Accordingly, the silicone-based resin composition can be uniformly coated to a uniform thickness between the semiconductor package and the heat dissipation component. Accordingly, the semiconductor device and the silicone-based resin composition according to the embodiment can have improved heat dissipation performance.

[0206] Hereinafter, in order to clarify the effects of the present invention, the present invention will be described in more detail with reference to Examples and Comparative Examples, but the present invention is not limited thereto.

[0207] Examples

[0208] A1: A polysiloxane compound represented by Chemical Formula 4 above, having a viscosity of 20,000 cPs of the polysiloxane compound at 23°C and containing an alkenyl group bonded to silicon

[0209] A2: A hydrogen polysiloxane compound represented by Chemical Formula 6 above, having a viscosity of 1000 cPs at 23°C and containing hydrogen groups bonded to its two ends

[0210] A3: A hydrogen polysiloxane compound represented by the above chemical formula 8, having a viscosity of 1000 cPs at 23°C and containing hydrogen groups bonded to its side chains

[0211] B1: Silver powder, having a tapped density of about 2.9 g / cm 3 , a specific surface area of about 0.9 m 2 / g, an average particle diameter (D50) of about 2 μm, an aspect ratio (square) of 3, and an Ig loss of 0.4 wt% at about 538°C, and surface-treated with fatty acid

[0212] B2: Silver powder, having a tapped density of about 6.4 g / cm 3 , a specific surface area of about 0.3 m 2 / g, an average particle diameter (D50) of about 3 μm, an aspect ratio (spherical) of 1.5, and an Ig loss of about 0.05 wt% at about 538°C

[0213] C: 3-Glycidoxypropyltrimethoxysilane

[0214] D: Platinum-divinyltetramethyldisiloxane complex

[0215] E: 1-Ethynyl-1-cyclohexanol

[0216] As shown in Table 1 below, the components were uniformly mixed at room temperature for 1 hour at a speed of about 40 rpm by a planetary mixer to prepare a silicone-based resin composition.

[0217]

Table 1

[0218]

[0219] Experimental Examples

[0220] 1. Lap shear strength and joint separation length

[0221] A region of about 2.5 cm × 1.25 cm of the first nickel plate was coated with the curable silicone resin composition to a thickness of about 200 μm, and the second nickel plate was covered with the coated composition. Next, with the first and second nickel plates pressed together with a weight of about 3 kgf, the pressed coating was temporarily cured at 135°C for about 10 minutes. The temporarily cured coating was cured at about 150°C for about 2 hours. Next, while pulling the first nickel plate and the second nickel plate in opposite directions by a universal testing machine (tensile strength analyzer, manufacturer: ZwickRoell Gmbh), the lap shear strength and joint separation length were measured according to DIN EN 1465.

[0222] 2. Coverage and spreading thickness

[0223] Apply approximately 0.7 g of the silicone-based resin composition onto a first silicon substrate with dimensions of approximately 27 mm × 27 mm. Next, cover the coated composition layer with a second silicon substrate having the same dimensions as the first silicon substrate. Next, while applying a pressure of approximately 3 kgf to the second silicon substrate, temporarily cure the pressed coating at approximately 135 °C for approximately 10 minutes. Next, cure the temporarily cured coating at approximately 150 °C for approximately 2 hours. Next, measure the area of the first silicon substrate and the second silicon substrate in close contact through the cured coating using a SAT ultrasonic testing device and an image particle analyzer, and derive the ratio of the area in close contact to the entire planar area.

[0224] 3. Viscosity

[0225] The viscosity of the curable silicone resin composition is measured at approximately 25 °C using a rheometer (product name: MCR302, manufacturer: Anton Paar GmbH) with a 25 mm diameter circular plate according to the DIN EN ISO 3219 method. Here, the viscosity is measured at a shear rate of approximately 10 (1 / s).

[0226] 4. Pot life

[0227] Let the silicone-based resin composition according to an embodiment stand at room temperature, and measure the time when the viscosity increases by approximately 50% compared to the initial viscosity as the pot life.

[0228] 5. Thermal conductivity

[0229] The silicone-based resin composition according to the embodiment is hot-pressed into a size of approximately 30 mm × 30 mm × 4 mm and cured at approximately 150 °C for approximately 2 hours to manufacture a sample for measuring thermal conductivity. Next, measure the thermal conductivity using a thermal conductivity analyzer (model: TPS-2500S, manufacturer: Hot Disk AB) according to the ISO22007-2 method.

[0230] 6. Thermal shock test

[0231] Perform the thermal shock test by repeating the test process of placing at -40 °C for 30 minutes and then placing at 125 °C for 30 minutes approximately 500 times. After completing the thermal shock test, measure the thermal conductivity.

[0232] 7. Reprocessability

[0233] Let the silicone-based resin composition according to an embodiment be kept frozen (-20 to -40 °C) again after the initial dispensing operation. When reprocessing, confirm whether the stored composition is suitable for the dispensing process.

[0234]

Table 2

[0235]

[0236] As summarized in Table 2, the silicone-based resin composition according to the embodiment has improved heat dissipation performance and durability.

[0237] Description of Reference Numerals

[0238] Circuit board 100

[0239] Semiconductor package 200

[0240] Conductive bump 300

[0241] Heat dissipation component 400

[0242] Thermal conductive layer 500

Claims

1. A semiconductor device, which comprises: a semiconductor package; a heat dissipation component disposed on the semiconductor package; and a heat conductive layer in direct contact with the semiconductor package and the heat dissipation component, wherein the heat conductive layer comprises a silicone-based resin composition, wherein the silicone-based resin composition comprises an organopolysiloxane; a conductive filler; and a curing catalyst, and the lap shear strength measured according to DIN EN 1465 in the silicone-based resin composition is from 0.30 N / mm 2 to 1.8 N / mm 2 .

2. A method of manufacturing a semiconductor device, the method comprises: providing a semiconductor package; coating a silicone-based resin composition on the semiconductor package; providing a heat dissipation component on the silicone-based resin composition; and curing the silicone-based resin composition to form a heat conductive layer, Wherein the silicone-based resin composition comprises an organopolysiloxane; a conductive filler; and a curing catalyst, and the lap shear strength measured according to DIN EN 1465 in the silicone-based resin composition is 0.30 N / mm 2 to 1.8 N / mm 2 .

3. A silicone-based resin composition, which comprises: an organopolysiloxane; a conductive filler; and a curing catalyst, wherein the lap shear strength measured according to DIN EN 1465 in the silicone-based resin composition is from 0.30 N / mm 2 to 1.8 N / mm 2 .

4. The silicone-based resin composition according to claim 3, wherein, The conductive filler includes a first heat-conducting powder with a tapped density less than 2.99 g / cm 3 ; and a second heat-conducting powder with a tapped density greater than 3.01 g / cm 3 .

5. The silicone-based resin composition according to claim 4, wherein, The specific surface area of the first heat-conducting powder is 0.5 m 2 / g to 1.6 m 2 / g, and The specific surface area of the second heat-conducting powder is 0.1 m 2 / g to 0.5 m 2 / g.

6. The silicone-based resin composition according to claim 5, wherein, The weight ratio of the second heat conductive powder to the first heat conductive powder is 0.2 to 0.

7.

7. The silicone-based resin composition according to claim 3, wherein, The joint separation length measured according to DIN EN 1465 is 0.3 mm or longer.

8. The silicone-based resin composition according to claim 7, wherein, The shear modulus obtained by dividing the lap shear strength by the joint separation length is 0.4 N / mm 3 to 1.8 N / mm 3 .

9. The silicone-based resin composition according to claim 3, wherein, The coverage rate measured by the following measurement method is 90% or greater: [Measurement method] Coat the silicone-based resin composition with a weight of 0.7 g on a first silicon substrate with a size of 27 mm × 27 mm, then place a second silicon substrate equal to or larger than the first silicon substrate on the coated silicone-based resin composition, then cure the silicone-based resin composition under a state of being pressed with a force of 3 kgf, and then obtain the area where the first silicon substrate is in close contact with the second silicon substrate through the silicone-based resin composition. The coverage rate is the ratio of the area where the first silicon substrate is in close contact with the second silicon substrate to the planar area of the first silicon substrate.

10. The silicone-based resin composition according to claim 9, wherein, The spreading thickness measured by the following measurement method is less than 200 μm: [Measurement method] The spreading thickness is the thickness of the cured silicone-based resin composition layer disposed between the first silicon substrate and the second silicon substrate.

11. The silicone-based resin composition according to claim 3, wherein, The pot life of the silicone-based resin composition is 10 hours or longer.

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