Apparatus for polishing one surface of workpiece, method for polishing one surface of workpiece, and method for manufacturing silicon wafer

Abstract

The single-side polishing device for the workpiece is further provided with a surface displacement measuring part capable of measuring the displacement of the upper surface of the polishing pad and the displacement of the exposed upper surface which is not covered by the polishing head. In a polishing step, one surface of a workpiece is polished while measuring the displacement of an exposed upper surface by means of a surface displacement measurement unit capable of measuring the displacement of the exposed upper surface. A method for manufacturing a silicon wafer according to the present invention uses the aforementioned method for polishing one surface of a workpiece.

Description

Technical Field

[0001] The present invention relates to a single-sided grinding apparatus for workpieces, a single-sided grinding method for workpieces, and a method for manufacturing a silicon wafer using the single-sided grinding method for workpieces. Background Art

[0002] In the single-sided grinding of a workpiece (e.g., a silicon wafer), while rotating a grinding table and a grinding pad having a diameter larger than that of the wafer, the grinding pad is pressed against the wafer to grind the wafer. At this time, since the grinding table and the grinding pad rotate, with respect to the pressing pressure of the wafer against the grinding pad, a pressure load and a pressure release are repeatedly generated. It is known that in such grinding, the viscoelasticity of the grinding pad particularly affects the grinding amount distribution of the outer peripheral portion of the wafer, and grinding pads having various physical property parameters (including viscoelasticity) have been proposed (for example, refer to Patent Document 1).

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2013-089767

[0006] Patent Document 2: Japanese Patent Application Laid-Open No. 11-165256 Summary of the Invention

[0007] Problems to be Solved by the Invention

[0008] However, it is difficult to represent the displacement amount of the grinding pad in actual grinding only by the method of grasping the physical property parameters of the conventional grinding pad. In contrast, in Patent Document 2, it is proposed to measure the deformation of the grinding pad when pressing the wafer, but it is not possible to measure the behavior of the deformation recovery of the grinding pad even after pressing. Therefore, a method for measuring the dynamic displacement amount of the grinding pad in single-sided grinding is desired.

[0009] Therefore, an object of the present invention is to provide a single-sided grinding apparatus for workpieces, a single-sided grinding method for workpieces, and a method for manufacturing a silicon wafer that can measure the dynamic displacement amount of the grinding pad in single-sided grinding.

[0010] Means for Solving the Problems

[0011] The main structure of the present invention is as follows.

[0012] (1) A single-sided grinding device for a workpiece, characterized by comprising: a grinding platform having a diameter larger than that of the aforementioned workpiece; a grinding pad adhered to the aforementioned grinding platform; a grinding head capable of holding and pressing the aforementioned workpiece against the grinding pad; and a grinding fluid supply nozzle for supplying grinding fluid to the aforementioned grinding pad; further comprising: a surface displacement measurement unit capable of measuring the displacement of the exposed upper surface of the aforementioned grinding pad, which is the portion of the upper surface not covered by the aforementioned grinding head.

[0013] (2) The single-sided grinding device for a workpiece as described in (1) above further comprises a grinding fluid removal unit for removing the aforementioned grinding fluid from the aforementioned exposed upper surface.

[0014] (3) The single-sided grinding device for a workpiece as described in (2) above, the aforementioned grinding fluid removal unit is configured to be able to blow air onto the aforementioned exposed upper surface.

[0015] (4) The single-sided grinding device for a workpiece as described in any one of (1) to (3) above, the aforementioned surface displacement measurement unit is arranged at multiple positions.

[0016] (5) The single-sided grinding device for a workpiece as described in any one of (1) to (4) above, the aforementioned workpiece is a wafer.

[0017] (6) A single-sided grinding method for a workpiece, characterized by comprising: a grinding process, using a grinding platform having a diameter larger than that of the aforementioned workpiece, a grinding pad adhered to the aforementioned grinding platform, a grinding head capable of holding and pressing the aforementioned workpiece against the grinding pad, and a grinding fluid supply nozzle for supplying grinding fluid to the aforementioned grinding pad, while supplying the aforementioned grinding fluid from the aforementioned grinding fluid supply nozzle to the aforementioned grinding pad, rotating the aforementioned grinding platform and the aforementioned grinding pad while pressing the aforementioned workpiece against the aforementioned grinding pad, thereby grinding the single side of the aforementioned workpiece; in the aforementioned grinding process, while measuring the displacement of the aforementioned exposed upper surface through a surface displacement measurement unit capable of measuring the displacement of the exposed upper surface of the aforementioned grinding pad, which is the portion of the upper surface not covered by the aforementioned grinding head, grinding the single side of the aforementioned workpiece.

[0018] (7) The single-sided grinding method for a workpiece as described in (6) above, while removing the aforementioned grinding fluid from the aforementioned exposed upper surface, grinding the single side of the aforementioned workpiece.

[0019] (8) The single-sided grinding method for a workpiece as described in (7) above, while blowing air onto the aforementioned exposed upper surface to remove the grinding fluid, grinding the single side of the aforementioned workpiece.

[0020] (9) The single-sided grinding method of the workpiece as described in (6) or (7) above further includes a preparatory process of measuring the displacement of the exposed upper surface of the workpiece without pressing the workpiece against the grinding pad; by comparing the measurement result in the preparatory process with the result of measuring the displacement of the exposed upper surface of the workpiece in the state of pressing the workpiece against the grinding pad, the dynamic change of the displacement of the exposed upper surface in the single-sided grinding of the workpiece is calculated.

[0021] (10) In the single-sided grinding method of the workpiece as described in any one of (6) to (9) above, the workpiece is a silicon wafer.

[0022] (11) A method for manufacturing a silicon wafer uses the single-sided grinding method of the workpiece as described in (10) above.

[0023] Advantages of the Invention

[0024] According to the present invention, it is possible to provide a single-sided grinding device for a workpiece, a single-sided grinding method for a workpiece, and a method for manufacturing a silicon wafer, which can measure the dynamic displacement amount of the grinding pad in single-sided grinding. Description of the Drawings

[0025] Figure 1 It is a schematic top view of a single-sided grinding device for a workpiece according to an embodiment of the present invention.

[0026] Figure 2 It is a schematic side view of a single-sided grinding device for a workpiece according to an embodiment of the present invention.

[0027] Figure 3 It is a graph showing the relationship between the measurement time and the displacement of the exposed upper surface.

[0028] Figure 4 It is shown in Figure 3 a graph of the data after removing outliers.

[0029] Figure 5 It is shown in Figure 4 a graph of the time moving average data after changing the time amplitude (set as several times the rotation period) of the centered moving average of the data.

[0030] Figure 6 It is shown in Figure 4 a graph of the data after N-averaging the data.

[0031] Figure 7 It is a graph showing the data when a preparatory process of measuring the displacement of the exposed upper surface in the same way without pressing the wafer against the grinding pad is performed.

[0032] Figure 8 It is a graph showing the relationship between the measurement time and the absolute amount of the displacement of the exposed upper surface.

[0033] Figure 9 This is a view of the case where air blowing is not performed. Detailed implementation mode

[0034] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0035] <Single-sided grinding device for workpieces>

[0036] Figure 1 This is a schematic top view of a single-sided grinding device for workpieces according to an embodiment of the present invention. Figure 2 This is a schematic side view of a single-sided grinding device for workpieces according to an embodiment of the present invention.

[0037] As Figure 1 , Figure 2 shown, the single-sided grinding device 1 includes: a grinding table 2 having a diameter larger than that of a workpiece (e.g., a silicon wafer) W; a grinding pad 3 adhered to the upper surface of the grinding table 2; a grinding head 4 capable of holding the workpiece W and pressing it against the grinding pad 3; and a grinding fluid supply nozzle 6 for supplying a grinding fluid (grinding slurry) 5 to the grinding pad 3.

[0038] In the illustrated example, the upper surface of the grinding pad 3 slides on the single side (lower surface) of the workpiece W, and the single side of the workpiece W is ground. Although Figure 2 is not shown in the figure, the grinding head 4 may also have a backing pad that serves as a holding portion for the upper surface of the workpiece W and a retainer ring that serves as a holding portion for the side surface (the inner diameter of which is equal to or larger than the diameter of the workpiece W). The grinding fluid 5 contains at least a water-soluble polymer and may also contain abrasive grains and an alkaline solution, and the water-soluble polymer can function as a protective agent for the workpiece W.

[0039] In addition, although not shown in the figure, the grinding head 4 may include: a shaft portion for lifting and rotating the grinding head 4; and a rotating frame portion provided at the lower end of the shaft portion and having a backing pad mounted on the lower surface. In addition, the single-sided grinding device 1 includes a rotating mechanism (shaft, motor, etc.) connected to the grinding table 2 and for rotating the grinding table 2.

[0040] Here, as Figure 1 , Figure 2As shown, the upper surface of the polishing pad 3 is composed of a portion covered by the polishing head 4 and a portion not covered by the polishing head 4 (hereinafter referred to as the exposed upper surface 7). There is polishing liquid 5 on the exposed upper surface 7 (the portion not covered by the polishing head 4) of the polishing pad during polishing, but it is not pressed by the polishing head 4 or other mechanisms. Moreover, this single-sided polishing apparatus 1 further includes a surface displacement measurement unit 8 capable of measuring the displacement of the exposed upper surface 7. The surface displacement measurement unit 8 is not particularly limited, but a non-contact displacement meter such as a laser displacement meter can be used.

[0041] As Figure 2 shown, the surface displacement measurement unit 8 is surrounded by a waterproof container 9, thereby being protected from the scattering of the polishing liquid 5. In this example, the waterproof container 9 is made of transparent acrylic. In addition, in this example, the waterproof container 9 has a liquid removal slope 10, which can prevent the attached polishing liquid 5 from remaining attached to the waterproof container 9 as it is.

[0042] Furthermore, as Figure 2 shown, this single-sided polishing apparatus 1 further includes a polishing liquid removal unit 11 for removing the polishing liquid 5 from the exposed upper surface 7. The polishing liquid removal unit 11 may be any mechanism that can remove the polishing liquid from the surface without affecting the measurement of the displacement amount of the polishing pad 3. In this example, the polishing liquid removal unit 11 is an air blowing unit configured to blow air 12 onto the exposed upper surface 7. This air blowing unit is arranged above the measurement point, and by blowing air onto the polishing pad 3 from above, the polishing liquid 5 can be removed from the measurement point.

[0043] As Figure 1 shown, it is preferable that the single-sided polishing apparatus 1 is provided with surface displacement measurement units 8 at multiple positions. Three surface displacement measurement units 8 are arranged corresponding to Figure 1 the three measurement points A, B, and C, but the number of surface displacement measurement units 8 is not limited to this example. In the illustrated example, the measurement point A is the measurement point at the position of the polishing pad 3 immediately after the pressure generated between the workpiece W is released, and the measurement points B and C are the points after a predetermined time has elapsed after the pressure is released. In this example, the measurement points A to C are arranged at equal intervals. On the other hand, the measurement points can be set to various configurations suitable for observing the dynamic changes in the displacement of the exposed upper surface 7 of the polishing pad 3. For example, they do not necessarily need to be arranged at equal intervals. For example, it can also be arranged as the measurement point at the position of the polishing pad 3 immediately after the pressure generated between the workpiece W is released, and the measurement point corresponding to the position where the shape of the polishing pad 3 has substantially recovered.

[0044] Hereinafter, the operation and effect of the single-sided polishing apparatus for the workpiece of this embodiment will be described.

[0045] The single-sided grinding apparatus 1 for the workpiece W of the present embodiment includes a surface displacement measurement unit 8 capable of measuring the displacement of the exposed upper surface 7. By continuously measuring the displacement of the exposed upper surface 7 during the single-sided grinding of the workpiece W by the surface displacement measurement unit 8, it is possible to grasp the load including the pressing pressure from the workpiece W and the dynamic displacement behavior of the grinding pad during decompression. By appropriately selecting the resolution of the surface displacement measurement unit 8, etc., it is possible to grasp the change over time of the displacement of the grinding pad 3 of about several micrometers, for example. Therefore, it is possible to evaluate the deviation of the physical properties of the grinding pad that cannot be known by measuring the displacement amount (about several hundred micrometers) of the grinding pad in the state of pressing the wafer.

[0046] Thus, according to the single-sided grinding apparatus 1 for the workpiece W of the present embodiment, it is possible to measure the dynamic displacement amount of the grinding pad during single-sided grinding.

[0047] Here, the single-sided grinding apparatus 1 preferably further includes a grinding liquid removing unit 11 for removing the grinding liquid 5 from the exposed upper surface 7. This is because it is possible to accurately measure the dynamic displacement amount of the grinding pad 3 during single-sided grinding without being affected by the grinding liquid 5. The grinding liquid removing unit 11 is preferably configured to be able to blow air 12 onto the exposed upper surface 7. This is because, with a simple structure, it is possible to be unaffected by the grinding liquid 5.

[0048] In addition, it is preferable that the surface displacement measurement unit 8 is arranged at multiple positions. This is because it is possible to grasp the change over time of the displacement of the grinding pad 3 during one cycle including the load of the pressing pressure from the workpiece W and decompression. By arranging multiple positions in the circumferential direction of the grinding pad 3, it is possible to grasp the change over time of the same position within the grinding pad 3, and thus it is possible to more accurately measure the dynamic change of the grinding pad 3.

[0049] <Single-sided grinding method of workpiece>

[0050] As an example, the single-sided grinding method of the workpiece according to an embodiment of the present invention can be performed using the grinding apparatus for the workpiece of the above embodiment.

[0051] The single-sided grinding method of the workpiece of the present embodiment includes: a grinding step, using a grinding table 2 having a diameter larger than that of the workpiece W, a grinding pad 3 adhered to the grinding table 2, a grinding head 4 capable of holding and pressing the workpiece W against the grinding pad 3, and a grinding liquid supply nozzle 6 for supplying the grinding liquid 5 to the grinding pad 3. While supplying the grinding liquid 5 from the grinding liquid supply nozzle 6 to the grinding pad 3, the workpiece W is pressed against the grinding pad 3 while rotating the grinding table 2 and the grinding pad 3, thereby performing single-sided grinding of the workpiece W.

[0052] In the grinding step, while measuring the displacement of the exposed upper surface 7 by the surface displacement measurement unit 8 capable of measuring the displacement of the exposed upper surface 7, the single-sided grinding of the workpiece W is performed.

[0053] In the polishing method of the workpiece W according to the present embodiment, in the polishing process, the surface displacement measuring unit 8 continuously measures the displacement of the exposed upper surface 7 during single-sided polishing, whereby it is possible to grasp the load including the pressing pressure from the workpiece W and the dynamic displacement behavior of the polishing pad 3 during decompression. By appropriately selecting the resolution of the surface displacement measuring unit 8, etc., it is possible to grasp the change over time of the displacement of the polishing pad 3 of, for example, a few micrometers.

[0054] In this way, according to the single-sided polishing method of the workpiece W of the present embodiment, it is possible to measure the dynamic displacement amount of the polishing pad during single-sided polishing.

[0055] In the single-sided polishing method, it is preferable to perform single-sided polishing of the workpiece W while removing the polishing liquid 5 from the exposed upper surface 7. This is because it is possible to accurately measure the dynamic displacement amount of the polishing pad 3 during single-sided polishing without being affected by the polishing liquid 5. In the polishing process, it is preferable to perform single-sided polishing of the workpiece W while blowing air 12 onto the exposed upper surface 7 to remove the polishing liquid. This is because it is possible to make it unaffected by the polishing liquid 5 by a simple method.

[0056] In the single-sided polishing method, it is preferable to further include a preliminary process of measuring the displacement of the exposed upper surface 7 in a state where the workpiece W is not pressed against the polishing pad 3; by comparing the measurement result in the preliminary process with the result of measuring the displacement of the exposed upper surface 7 in a state where the workpiece W is pressed against the polishing pad 3, the dynamic change in the displacement of the exposed upper surface 7 during single-sided polishing of the workpiece W is calculated. This is because it is possible to calculate the dynamic change in the displacement of the exposed upper surface 7 during single-sided polishing of the workpiece W in absolute value (absolute amount). In this preliminary process, the polishing head 4 does not contact the polishing pad 3 and stands by above the polishing pad 3, so the pressure from the polishing head 4 is not transmitted to the polishing pad 3. However, the polishing liquid 5 is supplied, and the measurement is performed while removing the polishing liquid 5 by the polishing liquid removing unit 11 at the displacement measurement point.

[0057] <Manufacturing method of silicon wafer>

[0058] The manufacturing method of the polished workpiece according to an embodiment of the present invention uses the single-sided polishing method of the workpiece W of the above embodiment to perform single-sided polishing of the workpiece W, thereby manufacturing a polished workpiece. Here, the workpiece W is a silicon wafer.

[0059] According to the manufacturing method of the polished workpiece of the present embodiment, it is possible to measure the dynamic displacement amount of the polishing pad during single-sided polishing.

[0060] Although not particularly limited, in the single-sided polishing apparatus for a workpiece and the single-sided polishing method for a workpiece, a silicon wafer can preferably be applied as the workpiece.

[0061] In the case of a manufacturing method applied to a silicon wafer, it may include normal manufacturing processes in addition to single-sided grinding. For example, after pulling a single crystal by the Czochralski method, a wafer is made by slicing, and for a wafer after processing steps such as polishing, etching, and double-sided grinding, the single-sided grinding of the present disclosure can be applied.

[0062] Hereinafter, embodiments of the present invention will be described, but the present invention is not limited to the following embodiments at all.

[0063] Embodiment

[0064] To confirm the effects of the present invention, Figure 1 , Figure 2 As shown in, a single-sided grinding device was used to perform single-sided grinding on five p-type silicon wafers with a diameter of 300 mm respectively. During the grinding process, while blowing air to the exposed upper surface, a laser displacement meter was used to measure the dynamic change of the displacement of the exposed upper surface. The laser displacement meter used IL-100 manufactured by Keyence Corporation (measurement range: -2 mm to 2 mm, resolution: 2 μm, sampling time: 10 ms). The wafer pressure applied by the grinding head was set to 20 kPa, and the rotation speed of the grinding pad was set to 40 rpm.

[0065] Figure 3 is a graph showing the relationship between the measurement time and the displacement of the exposed upper surface. Figure 3 The displacement meters 1 to 3 in respectively correspond to the measurement points A to C. As Figure 3 shown, there are cases where outliers are generated in the data. Therefore, for each measurement data x(t, n) of all five times (sample number N = 5), values that are discontinuous in time and significantly different from other values (extremely outlying values) are removed from the time average <x(t, n)> Tp－Ave (the case where |x(t, n) - <x(t, n)> Tp－Ave | > 200 μm is set as an extremely outlying value). The data after removing outliers is shown in Figure 4 . Only the data of the displacement meter 3 is shown in Figure 4 .

[0066] The Figure 4 data was subjected to a centered moving average (<x(t, n)> Tr－Ave ) at several times the rotation period Tr of the grinding head and the rotating platform. Any magnification can be used as long as vibrations and outliers can be removed, but if a large magnification is used, the data at the grinding start side and the grinding end side is significantly lacking in the centered moving average. From this point of view, the moving average data at 4 times the rotation period Tr is used hereinafter. Figure 5 is a graph showing Figure 4Graph of the data of the time moving average of the centralized data (set as several times the rotation period) after the change. In addition, Figure 6 is in Figure 4 of the data, where the N-average (<x(t, n)> Tr，N－Ave ) is performed for the measured N times at each time t.

[0067] Figure 7 is a graph showing the data when a preliminary process of measuring the displacement of the exposed upper surface is performed in the state where the wafer is not pressed against the polishing pad. In addition, the large vibration (unevenness) in this state is because there is a thickness deviation (generated during manufacturing, pasting, and dressing) on the surface of the polishing pad. Here, from Figure 6 of <x(t, n)> N，Tr－Ave subtract Figure 7 the average value of the xbg data (take the difference).

[0068] In Figure 8 , it shows the relationship between the measurement time and the absolute amount of the displacement of the exposed upper surface obtained by taking such a difference. Since the inclination of the laser displacement meter is set to 30°, multiply <x(t, n)> N，Tr－Ave - xbg by cos30° to set it as the absolute amount of the displacement of the polishing pad. As Figure 8 shows, it is obvious that in the polishing pad used in this embodiment, between the polishing heads (displacement meters 1 to 3) due to the rotation of the stage, the displacement amount does not instantaneously fully recover and there is a remaining displacement amount, and the dynamic displacement amount of the polishing pad in single-sided polishing can be measured.

[0069] As Figure 8 shows, it can be seen that the displacement amount shows a negative value and its absolute value increases as the polishing time passes. From this, it is obvious that the displacement amount does not instantaneously fully recover and remains even after the load caused by the wafer is removed, and in addition, the displacement amount accumulates due to repeated loads.

[0070] In this way, the dynamic displacement amount of the polishing pad in single-sided polishing can be measured.

[0071] Figure 9 is a graph of the case where air blowing is not performed (the same processing is performed otherwise). It can be seen that: in the case without air blowing, due to the influence of the polishing head touch stage, slurry inflow, and slurry film during polishing in the initial stage of polishing, the displacement amount of the polishing pad cannot be captured (in this example, since the data shows a positive value (for the tensile state of the polishing pad), the viscoelastic characteristics of the polishing pad cannot be evaluated.

[0072] Explanation of reference numerals

[0073] 1: Single-sided polishing device for workpieces

[0074] 2: Polishing platform

[0075] 3: Polishing pad

[0076] 4: Polishing head

[0077] 5: Polishing liquid

[0078] 6: Polishing liquid supply nozzle

[0079] 7: Exposed upper surface

[0080] 8: Surface displacement measurement unit

[0081] 9: Waterproof container

[0082] 10: Liquid removal inclined plane

[0083] 11: Polishing liquid removal part

[0084] 12: Air

Claims

1. A single-sided grinding device for a workpiece, characterized in that, it comprises: a grinding platform having a diameter larger than that of the aforementioned workpiece; a grinding pad adhered to the aforementioned grinding platform; a grinding head capable of holding and pressing the aforementioned workpiece against the grinding pad; and a grinding fluid supply nozzle for supplying grinding fluid to the aforementioned grinding pad; it further comprises: a surface displacement measurement unit capable of measuring the displacement of the upper surface of the aforementioned grinding pad that is not covered by the aforementioned grinding head, i.e., the exposed upper surface.

2. The single-sided grinding device for a workpiece according to claim 1, characterized in that, it further comprises a grinding fluid removal unit for removing the aforementioned grinding fluid from the aforementioned exposed upper surface.

3. The single-sided grinding device for a workpiece according to claim 2, characterized in that, the aforementioned grinding fluid removal unit is configured to be able to blow air onto the aforementioned exposed upper surface.

4. The single-sided grinding device for a workpiece according to any one of claims 1 to 3, characterized in that, the aforementioned surface displacement measurement unit is arranged at multiple positions.

5. The single-sided grinding device for a workpiece according to any one of claims 1 to 4, characterized in that, the aforementioned workpiece is a wafer.

6. A single-sided grinding method for a workpiece, characterized in that, it includes: a grinding process, using a grinding platform having a diameter larger than that of the aforementioned workpiece, a grinding pad adhered to the aforementioned grinding platform, a grinding head capable of holding and pressing the aforementioned workpiece against the grinding pad, and a grinding fluid supply nozzle for supplying grinding fluid to the aforementioned grinding pad. While supplying the aforementioned grinding fluid from the aforementioned grinding fluid supply nozzle to the aforementioned grinding pad, the aforementioned workpiece is pressed against the aforementioned grinding pad while rotating the aforementioned grinding platform and the aforementioned grinding pad, thereby grinding one side of the aforementioned workpiece; in the aforementioned grinding process, while measuring the displacement of the aforementioned exposed upper surface through a surface displacement measurement unit capable of measuring the displacement of the upper surface of the aforementioned grinding pad that is not covered by the aforementioned grinding head, i.e., the exposed upper surface, one side of the aforementioned workpiece is ground.

7. The single-sided grinding method for a workpiece according to claim 6, characterized in that, while removing the aforementioned grinding fluid from the aforementioned exposed upper surface, one side of the aforementioned workpiece is ground.

8. The single-sided grinding method for a workpiece according to claim 7, characterized in that, in the aforementioned grinding process, while blowing air onto the aforementioned exposed upper surface to remove the grinding fluid, one side of the aforementioned workpiece is ground.

9. The single-sided grinding method for a workpiece according to claim 6 or 7, characterized in that, it further includes a preliminary process of measuring the displacement of the aforementioned exposed upper surface in a state where the aforementioned workpiece is not pressed against the aforementioned grinding pad; by comparing the measurement result in the aforementioned preliminary process with the result of measuring the displacement of the aforementioned exposed upper surface in a state where the aforementioned workpiece is pressed against the aforementioned grinding pad, the dynamic change of the displacement of the aforementioned exposed upper surface in the single-sided grinding of the aforementioned workpiece is calculated.

10. The single-sided grinding method for a workpiece according to any one of claims 6 to 9, characterized in that, the aforementioned workpiece is a silicon wafer.

11. A manufacturing method for a silicon wafer, characterized in that, the single-sided grinding method for a workpiece according to claim 10 is used.

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