Apparatus and method for continuous production of silicon oxide

Abstract

The invention provides a continuous manufacturing apparatus and a continuous manufacturing method of silicon oxide. In one embodiment, as an apparatus for continuously producing silicon oxide including a main chamber connected to a reactor for generating silicon oxide gas, the apparatus for continuously producing silicon oxide includes: a condensation unit including a cylindrical main body having an open surface open toward a connection pipe connected to the reactor; a moving part that moves the condensing part in the main chamber part; and a cooling part configured to be capable of advancing and retreating toward the main body in the main chamber part so as to cool the main body.

Description

Technical Field

[0001] The present invention relates to an apparatus and a method for continuously manufacturing silicon oxide, and more particularly to an apparatus and a method for manufacturing silicon oxide for secondary batteries. Background Art

[0002] In recent years, due to the rapid rise of electric vehicles, the expectations for lithium-ion secondary batteries have been increasing. There is a demand to maintain the existing capacity while improving the fast charging characteristics.

[0003] The technological development and demand growth of lithium secondary batteries are rapid, and there is a need for lithium secondary batteries with higher energy density than conventional ones. In order to increase the energy density of secondary batteries, research and development are being carried out on high-capacity positive and negative electrode materials, high-density electrode plates, thin separator films, and increasing the charge and discharge voltage. The research and development direction also lies in increasing the capacity of positive and negative electrode materials.

[0004] Among the negative electrode materials that determine the capacity of lithium secondary batteries, silicon-based materials are being actively developed, and silicon-based materials are the most promising materials for achieving high capacity.

[0005] The apparatus for manufacturing negative electrode materials from silicon-based materials includes a reactor for vaporizing a silicon oxide raw material and a condenser for condensing the gas generated in the reactor into a solid phase. At this time, the reactor and the condenser are connected by a pipe.

[0006] The condensation reaction must be carried out in a determined space to obtain a deposited layer as a material. However, there is a problem that the vapor condenses at places such as the pipe or the condenser inlet to form a deposited layer. Therefore, continuous production is impossible, and the apparatus must be stopped to remove the deposited layer.

[0007] Prior Art Documents

[0008] Patent Documents

[0009] Patent Document 1: KR 10-1988358B Summary of the Invention

[0010] (1) Technical Problem to be Solved

[0011] In order to solve the above-mentioned problems of the prior art, the present invention aims to provide an apparatus and a method for continuously manufacturing silicon oxide.

[0012] (2) Technical Solution

[0013] In order to achieve the above-mentioned object, the present invention provides an apparatus and a method for continuously manufacturing silicon oxide as described below.

[0014] In one embodiment, the present invention provides a continuous silicon oxide manufacturing apparatus, which includes a main chamber portion connected to a reactor that generates silicon oxide gas. The continuous silicon oxide manufacturing apparatus includes: a condensation portion, the condensation portion including a cylindrical main body having an open surface that opens toward a connection pipe side connected to the reactor; a moving portion that moves the condensation portion within the main chamber portion; and a cooling portion configured to move forward and backward within the main chamber portion toward the main body to cool the main body.

[0015] In one embodiment, the main chamber portion is connected to a vacuum generating portion, and the condensation portion may further include a frame connected to the main body.

[0016] In one embodiment, the main body has a cylindrical shape with a central axis extending in a horizontal direction, and the cross-sectional area of the main body may be larger than the cross-sectional area of the connection pipe.

[0017] In one embodiment, the cooling portion may include a cooling plate through which a cooling fluid flows and a moving unit that moves the cooling plate in the horizontal direction parallel to the central axis of the main body. The moving unit may be configured to move the cooling plate such that the cooling plate contacts a rear surface portion opposite to the open surface when the silicon oxide gas flows into the main body of the condensation portion.

[0018] In one embodiment, the cooling plate includes first uneven portions, and the rear surface portion of the main body may include second uneven portions. When the cooling plate contacts the rear surface portion, the second uneven portions cooperate with the first uneven portions.

[0019] In one embodiment, the cooling portion may include a plurality of guide rods that extend in the horizontal direction and guide the cooling plate.

[0020] In one embodiment, the continuous silicon oxide manufacturing apparatus may include an anti-escape gas plate that extends around the cooling plate into the interior of the main chamber portion.

[0021] In one embodiment, the moving portion may include a plurality of rollers and a driving unit. The plurality of rollers are arranged below the frame, and the driving unit rotates the rollers. It may further include a flow guiding plate that extends into the interior of the main chamber portion with the connection pipe as the center.

[0022] In one embodiment, the frame may have a rectangular parallelepiped shape surrounding the main body, and a gas guiding plate having through holes formed thereon may be arranged on a surface of the frame in the direction of the open surface. The diameter of the through holes on the front surface portion of the gas guiding plate may be different from the diameter on the rear surface portion of the gas guiding plate.

[0023] In one embodiment, the main chamber portion includes a first gate valve and a second gate valve. The first gate valve and the second gate valve are arranged on both side surfaces in the moving direction in which the condensation portion is moved by the moving portion. A loading chamber can be connected to the outside of the first gate valve, and a deloading preparation chamber can be connected to the outside of the second gate valve.

[0024] In one embodiment, the loading chamber and the deloading preparation chamber can be connected to a vacuum generating portion. The main chamber portion includes a scraper and a collection portion. The scraper is arranged above the connection portion connecting the connection pipe in the main chamber portion and is configured to be movable in the vertical direction. The collection portion is arranged below the scraper.

[0025] In one embodiment, the present invention provides a method for continuously manufacturing silicon oxide, which includes: a first main body moving step of moving a cylindrical main body to a condensation position inside the main chamber portion in a vacuum state; a cooling portion approaching step of causing at least a part of the cooling portion to approach one side surface of the main body that has been moved to the condensation position from the outside of the main body; a condensation step of condensing the silicon oxide gas of the reactor inside the main body; a cooling portion detaching step of detaching the cooling portion from the main body; and a second main body moving step of moving the main body from the condensation position to a cooling position.

[0026] In one embodiment, the method for continuously manufacturing silicon oxide may further include: a loading chamber input step, which is performed before the first main body moving step, of inputting the main body into the loading chamber in an atmospheric pressure state; a vacuum pumping step of pumping the loading chamber into which the main body has been input by a vacuum generating portion; and a main chamber portion input step of opening a first gate valve between the vacuum-pumped loading chamber and the main chamber portion and inputting the main body into the main chamber portion.

[0027] In one embodiment, the method for continuously manufacturing silicon oxide may further include: a deloading preparation chamber input step, which is performed after the second moving step, of opening a second gate valve between the main chamber portion and the deloading preparation chamber and inputting the main body into the vacuum-pumped deloading preparation chamber; and a discharging step of closing the second gate valve, adjusting the deloading preparation chamber to atmospheric pressure, and then discharging the main body to the outside.

[0028] In one embodiment, the method for continuously manufacturing silicon oxide may further include: a removing step, which is performed after the discharging step, of removing the condensate condensed in the main body, and re-performing the loading chamber input step for the main body from which the condensate has been removed.

[0029] (III) Advantageous Effects

[0030] With the above configuration, the present invention can provide a continuous manufacturing apparatus and method for continuously manufacturing silicon oxide. Description of the Drawings

[0031] Figure 1 is a schematic view of a continuous silicon oxide manufacturing apparatus according to an embodiment of the present invention.

[0032] Figure 2 is a perspective view of a continuous silicon oxide manufacturing apparatus according to an embodiment of the present invention.

[0033] Figure 3 is Figure 1 a perspective view of a condensation unit of the continuous manufacturing apparatus.

[0034] Figure 4 is Figure 1 a perspective schematic view of observing a cooling unit inside a main chamber unit in the continuous manufacturing apparatus.

[0035] Figure 5 is Figure 1 a cross-sectional schematic view of a main chamber unit of the continuous manufacturing apparatus.

[0036] Figure 6 is Figure 1 a cross-sectional schematic view at a condensation position of a main chamber unit of the continuous manufacturing apparatus.

[0037] Figure 7 (a) of Figure 7 and (b) of Figure 1 are cross-sectional schematic views of a gas guiding plate of a condensation unit.

[0038] Figure 8 is a flowchart of a continuous silicon oxide manufacturing method according to an embodiment of the present invention. Detailed Description of the Invention

[0039] Hereinafter, preferred embodiments will be described in detail with reference to the accompanying drawings so that those skilled in the art to which the present invention pertains can easily implement the present invention. However, when describing the preferred embodiments of the present invention in detail, if it is considered that the detailed description of related known functions or configurations may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. In addition, throughout the drawings, the same reference numerals are used for parts having similar functions and actions. In addition, in this specification, terms such as "upper", "above", "upper surface", "lower", "below", "lower surface", "side surface", etc. are based on the drawings, and may actually be different depending on the arrangement direction of the components.

[0040] In addition, throughout the specification, when a part is described as being "connected" to another part, it includes not only the case of "direct connection", but also the case of "indirect connection" with other components intervening therebetween. In addition, when described as "including" a certain component, unless there is an express contrary description, it means that other components may also be included, and other components are not excluded.

[0041] Figures 1 to 6 Shown is a continuous silicon oxide manufacturing apparatus according to an embodiment of the present invention. Figure 1 Shown is a schematic view of a continuous silicon oxide manufacturing apparatus according to an embodiment of the present invention, Figure 2 Shown is a perspective schematic view of a continuous silicon oxide manufacturing apparatus according to an embodiment of the present invention, Figure 3 Shown is Figure 1 a perspective view of the condensation part of the continuous manufacturing equipment of Figure 4 Shown is Figure 1 a perspective schematic view of observing the cooling part inside the main chamber part in the continuous manufacturing equipment of Figure 5 Shown is Figure 1 a cross-sectional schematic view of the main chamber part of the continuous manufacturing equipment of Figure 6 Shown is Figure 1 a cross-sectional schematic view at the condensation position of the main chamber part of the continuous manufacturing equipment of

[0042] A continuous silicon negative electrode material manufacturing apparatus 100 according to an embodiment of the present invention includes a main chamber part 110 connected to a reactor 10 that generates silicon oxide gas; a condensation part 200 including a cylindrical main body 210 having an open surface that opens toward the connection pipe 11 connected to the reactor 10, such that the silicon oxide gas flows into the main chamber part 110 and condenses; a moving part 120 that moves the condensation part 200 within the main chamber part 110; and a cooling part 170 configured to be movable within the main chamber part 110 to cool the main body 210 when the silicon oxide gas flows into the condensation part 200.

[0043] A continuous silicon oxide manufacturing apparatus 100 according to an embodiment of the present invention is an apparatus that receives the silicon oxide gas generated in the reactor 10 and condenses it to manufacture silicon oxide. For the reactor 10, its structure is not limited as long as it can generate silicon oxide gas.

[0044] As Figure 1 shown, the reactor 10 is connected to a raw material supply part 20, and the raw material supplied by the raw material supply part 20 is heated by a heater (not shown in the figure) to generate gas. The reactor 10 generates gas in a state insulated from the outside by a heat insulating material layer 17, and a heater 15 is arranged on the connection pipe 11 connecting the reactor 10 and the main chamber part 110 to prevent condensation inside the pipeline.

[0045] In the present invention, when the condensation unit 200 enters the main chamber unit 110, the main chamber unit 110 is configured to supply gas through the connecting pipe 11. After condensation is completed in the condensation unit 200, it is discharged to the outside of the main chamber unit 110 to remove condensate. The main chamber unit 110 includes a connecting portion 112 that connects the connecting pipe 11 of the reactor 10, and includes a housing 111 that forms an internal space for accommodating the condensation unit 200. The housing 111 can be heat-insulated, and the internal space is connected to the vacuum generating unit 300 so that the inside remains vacuum while being connected to the reactor 10.

[0046] As Figure 1 shown, the main chamber unit 110 further includes a moving unit 120 that moves the condensation unit 200; and a cooling unit 170 that contacts the condensation unit 200 when the condensation unit 200 moves to the condensation position, so that the condensation unit 200 is cooled. In addition, the main chamber unit 110 includes: a baffle plate 113 that extends around the connecting portion 112 into the internal space to guide the inflowing gas to move inside the main body 210 of the condensation unit 200; and an anti-escape gas plate 115 that extends around the cooling unit 170 into the internal space to prevent gas from flowing to the cooling unit 170.

[0047] The loading chamber 130 is connected to one side of the main chamber unit 110, and the stripping preparation chamber 150 is connected to the other side. A first gate valve 140 is disposed between the loading chamber 130 and the main chamber unit 110, and a second gate valve 160 is disposed between the stripping preparation chamber 150 and the main chamber unit 110. The inlet side of the loading chamber 130 and the outlet side of the stripping preparation chamber 150 may have moving units 133 and 153 for moving the condensation unit 200. The loading chamber 130 and the stripping preparation chamber 150 include doors 135 to enable the condensation unit 200 to enter and exit the chamber interior.

[0048] The loading chamber 130 and the stripping preparation chamber 150 are also connected to the vacuum generating unit 300, the same as the main chamber unit 110. The loading chamber 130 is disposed at a position before the condensation unit 200 enters the main chamber unit 110. When the condensation unit 200 enters the interior of the loading chamber 130, after the air inside the loading chamber 130 is removed by the vacuum generating unit 300 to form a vacuum state, the first gate valve 140 is opened so that the condensation unit 200 enters the main chamber unit 110 while maintaining a vacuum state inside the main chamber unit 110.

[0049] Similarly, in the unloading preparation chamber 150, the second gate valve 160 is opened under a vacuum state to receive the condensation unit 200 from the main chamber unit 110. After supplying air to the unloading preparation chamber 150 with the second gate valve 160 closed, the condensation unit 200 is discharged outwards. Therefore, the present invention includes a loading chamber 130 and an unloading preparation chamber 150, and the condensation unit 200 can be loaded and discharged while the main chamber unit 110 maintains a vacuum state.

[0050] The main chamber unit 110 includes a moving unit 120 that moves the condensation unit 200 inside from the loading chamber 130 side to the unloading preparation chamber 150 side. In this embodiment, the main chamber unit 110 includes a space capable of accommodating three condensation units 200. In the direction from the loading chamber 130 to the unloading preparation chamber 150, this space is referred to as the preheating position A1, the condensation position A2, and the cooling position A3 of the condensation unit 200. Specifically, as Figure 1 shown, the position of the condensation unit 200 adjacent to the loading chamber 130 inside the main chamber unit 110 is referred to as the preheating position A1. When the condensation unit 200 is in the middle inside the main chamber unit 110, its position is referred to as the condensation position A2, where the gas in the connecting pipe 11 is supplied to the condensation unit 200. The position of the condensation unit 200 adjacent to the unloading preparation chamber 150 inside the main chamber unit 110 is referred to as the cooling position A3.

[0051] However, it is not necessary for the main chamber unit 110 to have a space capable of accommodating three condensation units 200. It is only necessary for the main chamber unit 110 to be able to position the condensation unit 200 at the condensation position A2. The preheating position A1 or the cooling position A3 can also be inside the loading chamber 130 or the unloading preparation chamber 150. The preheating position A1 or the cooling position A3 can also not be inside the main chamber unit 110, but inside the loading chamber 130 or the unloading preparation chamber 150. The processing steps when the condensation unit 200 is at the preheating position A1, the condensation position A2, and the cooling position A3 will be described later. Additionally, if necessary, the main chamber unit 110 can also accommodate more than three condensation units 200 inside.

[0052] At the condensation position A2, the cooling unit 170 is disposed behind the condensation unit 200, that is, at a position opposite to the position of the connection pipe 11. The cooling unit 170 includes a cooling plate 175 and a moving unit 171 connected to the cooling plate 175 to move the cooling plate 175 forward and backward. The cooling plate 175 is connected to a cooling water supply unit 190. In the cooling plate 175, a cooling fluid circulates through the cooling plate 175 to cool the cooling plate 175. The cooling plate 175 contacts the outer surface of the rear portion 213 of the main body 210 of the condensation unit 200, thereby cooling the rear portion 213 of the main body 210, and gas condenses on the inner surface of the rear portion 213.

[0053] On the other hand, a removal unit 180 is disposed above the connection portion 112 of the connection pipe 11 in the main chamber portion 110 to remove condensate generated at the end of the connection pipe 11 that causes a reduction in the cross-sectional area of the connection pipe 11.

[0054] Refer to Figures 3 to 6 Each configuration will be further described.

[0055] The moving unit 120 disposed below the main chamber portion 110 includes a plurality of rollers 121 and a driving unit 125 that rotates the rollers 121. The driving unit 125 may be a motor, and the driving unit 125 is connected to the plurality of rollers 121 through a transmission unit such as a chain, a belt, a gear, etc. According to the driving action of the driving unit 125, the rollers 121 rotate, and then the condensation unit 200 placed on the rollers 121 can move.

[0056] The condensation unit 200 includes a cylindrical main body 210, a rectangular parallelepiped-shaped frame 220, and a placement portion 230. The placement portion 230 is disposed below the main body 210 so that the main body 210 is horizontally placed and connected to the frame 220 in a state where one side is open. The central axis C2 (refer to Figure 5 ) of the main body 210 is parallel to the extending direction of the connection pipe 11 and is in the horizontal direction. The diameter of the main body 210 is larger than the diameter of the connection pipe 11.

[0057] In the frame 220, a gas guiding plate 225 is disposed on the surface where the open surface of the main body 210 is located. Through holes 212 are formed in the gas guiding plate 225 to allow gas to flow in from the open surface. The diameter of the through holes 212 may be smaller than the diameter of the main body 210, but is formed to be larger than the diameter of the connection pipe 11. The condensation unit 200 includes the gas guiding plate 225, and the main chamber portion 110 includes a flow guiding plate 113, so that the gas supplied by the connection pipe 11 flows into the interior of the main body 210 instead of flowing into other spaces inside the main chamber portion 110.

[0058] A suspension ring 217 is connected to the upper side of the main body 210 and is used for hoisting by a winch or a crane when moving to remove condensate after the condensation part 200 is discharged to the outside of the device 100.

[0059] The main body 210 is in a cylindrical shape with a central axis C2 formed horizontally. One side of it is open, and the other side, i.e., the rear part 213, is closed. The inner surface of the rear part 213 is the condensation surface where the gas condenses. The outer surface of the rear part 213 contacts the cooling plate 175 of the cooling part 170, and condensation occurs on the inner surface. The outer surface of the rear part 213 alternately forms annular concave parts 214 and convex parts 215, and the concave parts 214 and convex parts 215 have shapes corresponding to the convex parts 176 and concave parts 177 of the cooling plate 175. The concave and convex parts (176, 177) on the front part of the cooling plate 175 cooperate with the concave and convex parts (214, 215) on the outer surface, thereby increasing the heat conduction area. At this time, the concave and convex parts (176, 177) of the cooling plate 175 can be called the first concave and convex parts, and the concave and convex parts (214, 215) of the rear part 213 are also called the second concave and convex parts.

[0060] On the other hand, the continuous manufacturing device 100 according to an embodiment of the present invention includes a control part 400. The control part 400 moves the condensation part 200 entering the inside of the main chamber part 110 through the driving unit 125 of the moving part 120. In order to monitor whether the condensation part 200 is in the correct position, a plurality of position detection sensors 128 can be arranged inside the main chamber part 110. As Figure 5 shown, the position detection sensor 128 can be a non-contact sensor, but it can also be composed of contact sensors. Through the position detection sensor 128, the condensation part 200 can be located at the correct condensation position A2.

[0061] For the cooling part 170, the side of the cooling plate 175 faces the inner space of the main chamber part 110, and a moving unit 171 for moving the cooling plate 175 in the horizontal direction can also be arranged on the outside. A part of the moving unit 171 is fixed to the housing 111, and a part is connected to the cooling plate 175, so that the cooling plate 175 can move relative to the housing 111. In one embodiment, the moving unit 171 includes a motor and a threaded rotating shaft 172 connected to the motor. The cooling part 170 includes a plate body 173 connected to the rotating shaft 172 and moving as the rotating shaft 172 rotates, and a plurality of guide rods 174 connected to the cooling plate 175 and extending in the horizontal direction to guide the movement, and is configured to convert the rotation of the motor into the forward and backward movement of the cooling plate 175, but is not limited thereto. Of course, a cylinder that directly realizes the forward and backward movement can also be used as the moving unit.

[0062] On the other hand, for the cooling plate 175 of the cooling unit 170, a gas escape prevention plate 115 (refer to Figure 4 ) that surrounds the cooling plate 175 is arranged in the main chamber unit 110 to prevent gas from adhering to the surface of the cooling plate 175 and condensing.

[0063] The first concavo-convex portions (176, 177) of the cooling unit 170 are formed to correspond to the shapes of the second concavo-convex portions (214, 215) of the main body 210. The position where the central axis C1 of the first concavo-convex portions (176, 177) is the same as the center C2 of the main body 210 can be referred to as the condensation position A2 of the condensation unit 200.

[0064] At the condensation position A2, a removal unit 180 is arranged above the connection between the condensation unit 200 and the connection pipe 11. The removal unit 180 includes a scraper 182 and a collection unit 185 arranged on the lower side of the scraper 182. The scraper 182 is connected to a scraper driving unit 181 and is arranged to move in the vertical direction according to the driving of the scraper driving unit 181. The scraper 182 moves in the vertical direction at a position corresponding to the end of the connection pipe 11 located at the connection portion 112, and by removing the condensate that may be formed on the end of the connection pipe 11, the gas can be smoothly supplied through the connection pipe 11.

[0065] The operation of the silicon oxide continuous manufacturing apparatus 100 according to an embodiment of the present invention will be described below.

[0066] The silicon oxide continuous manufacturing apparatus 100 has a structure for supplying and discharging a plurality of condensation units 200. When the condensation in the condensation unit 200 reaches a certain level, without stopping the apparatus, by replacing the condensation unit 200, the condensation can continue to occur, so that the silicon oxide can be continuously manufactured.

[0067] In addition, for continuous operation, by including a loading chamber 130, a degassing preparation chamber 150, and first and second gate valves (140, 160), the condensation unit 200 can be inserted and discharged while the main chamber unit 110 is maintained in a vacuum state.

[0068] For the condensation unit 200 inserted through the loading chamber 130, after the loading chamber 130 is adjusted to a vacuum environment, the first gate valve 140 is opened and the condensation unit 200 is inserted into the main chamber unit 110. The condensation unit 200 in the main chamber unit 110 is located at the preheating position A1 and is preheated while waiting for the previous condensation unit 200 to condense at the condensation position A2. Although no separate heater is provided for preheating, a heater can also be provided according to needs. By performing preheating, the portion where the condensation unit 200 condenses at the condensation position A2 can be limited to the rear portion 213 in contact with the cooling plate 175.

[0069] When the previous condensation unit 200 completes condensation and disengages from the condensation position A2, the condensation unit 200 located at the preheating position A1 moves to the condensation position A2 through the moving unit 120. When the condensation unit 200 moves to the condensation position A2, the cooling plate 175 advances toward the condensation unit 200 and contacts the rear portion 213 of the condensation unit 200. As heat escapes to the cooling plate 175, the gas supplied to the inside of the condensation unit 200 condenses on the inner surface of the other surface 213, and condensate is formed. At this time, as needed, the removing unit 180 operates to remove the condensate generated on the connecting pipe 11.

[0070] Even during the movement of the condensation unit 200, gas continues to be generated in the reactor 10, and the movement of the condensation unit 200 does not require much time. By means of the deflector plate 113 and the gas guide plate 225, it is prevented from escaping outside the main body 210 of the condensation unit 200, so that continuous operation can be performed. In addition, the cooling plate 175 advances and retracts to condense the moving condensation unit 200, and an anti-diffusion gas plate 115 is configured to prevent condensate from being generated on the contact surface between the cooling plate 175 and the main body 210.

[0071] When the condensation unit 200 has been at the condensation position A2 for a sufficient time, it is regarded as having completed condensation, and the condensation unit 200 moves from the condensation position A2 to the cooling position A3. It waits at the cooling position A3 and cools naturally, and then moves to the stripping preparation chamber 150 through the second gate valve 160. When the second gate valve 160 is opened, the stripping preparation chamber 150 maintains a vacuum environment, and when the condensation unit 200 is put into the stripping preparation chamber 150 and the second gate valve 160 is closed, air is introduced to make it the same as the external environment. Then, a door (not shown in the figure) is opened, the condensation unit 200 is discharged from the stripping preparation chamber 150, and the condensate condensed on the rear portion 213 of the condensation unit 200 is removed.

[0072] In the present invention, condensate grows from the rear portion 213 of the cylindrical main body 210. The main body 210 is formed of a metal material with good conductivity to facilitate cooling by the cooling plate 175. The main body 210 and the condensate have different coefficients of thermal expansion. When the condensation unit 200 is sufficiently cooled, due to the different coefficients of thermal expansion, the condensate breaks inside the cylindrical main body 210, making it easy to recover the condensate. Even in the horizontal state, the cylindrical main body 210 can accommodate the broken condensate, so even if the condensate breaks at a certain moment, it will not affect the recovery.

[0073] In this way, the condensate is removed from the condensation unit 200 and recovered, so that the empty condensation unit 200 is put back into the loading chamber 130 from the beginning. Preferably, the condensation unit 200 is located at each position, but as long as there are at least two condensation units 200, the operation can be carried out through a continuous process.

[0074] On the other hand, Figure 7in (a) and Figure 7 FIG. (b) shows a cross-sectional schematic view of the gas guiding plate 225 of the present invention. As Figure 7 in (a) and Figure 7 shown in FIG. (b), for the gas guiding plate 225, the diameter d1 on the connecting pipe 11 side and the diameter d2 on the main body 210 side can be different. That is to say, the front diameter d1 and the rear diameter d2 of the gas guiding plate 225 can be different. If the front diameter d1 is greater than the rear diameter d2, the gas guiding plate 225 deforms toward the main body 210 side. If the rear diameter d2 is greater than the front diameter d1, the gas guiding plate 225 deforms toward the connecting pipe 11 side. This is because, in the state where the gas guiding plate 225 is fixed by the frame 220, since the temperature rises as the gas enters from the connecting pipe 11, the gas guiding plate 225 will deform. By adjusting the front diameter d1 and the rear diameter d2, the gas guiding plate 225 can be deformed into a shape suitable for the gas to flow from the connecting pipe 11 to the main body 210.

[0075] Figure 8 FIG. shows a flowchart of a method for continuously manufacturing silicon oxide according to an embodiment of the present invention. Referring to Figure 1 the description of the silicon oxide continuous manufacturing apparatus of Figure 8 the flowchart of

[0076] Method for continuously manufacturing silicon oxide, comprising: a loading chamber input step S110 of inputting a condensation part 200 into a loading chamber 130; a vacuum pumping step S120 of vacuum pumping the loading chamber 130; a main chamber part input step S130 of inputting the condensation part 200 into the interior of the main chamber part in a vacuum state; a preheating step S140 of preheating the condensation part 200 at a preheating position A1; a moving step S150 of moving the condensation part 200 to a condensation position A2 where a connecting pipe 11 and a cooling plate 175 are located; a cooling part approaching step S160 of advancing the cooling plate 175 of the cooling part 170 towards the condensation part 200 moved to the condensation position A2, and then the condensation part 200 coming into contact with the cooling plate 175; a condensation step S170 of condensing the gas supplied through the connecting pipe 11 on the condensation part 200 in a state where the cooling plate 175 is in contact; a cooling part separating step S180 of retracting the cooling plate 175 of the cooling part 170, so that the condensation part 200 moves away from the cooling plate 175; a moving step S190 of moving the condensation part 200 after the cooling part 170 separates from the condensation position A2; a cooling step S200 of cooling the condensation part 200; a moving step S210 of moving the condensation part 200 to a vacuum state of a stripping preparation chamber 150; a discharging step S220 of inputting air into the stripping preparation chamber 150 and then discharging the condensation part 200 from the stripping preparation chamber 150; and a removing step S230 of removing the condensate of the discharged condensation part 200. In the removing step S230, the condensation part 200 from which the condensate is removed is re-input into the loading chamber 130 to execute the input step S110, thereby repeating a series of steps.

[0077] In the present invention, before inputting into the main chamber part 110, the loading chamber 130 is input (S110). After the loading chamber 130 is vacuum pumped (S120), the first gate valve 140 is opened, and the main chamber part 110 is input (S130). When discharging, the second gate valve 160 is opened to move the condensation part 200 to the vacuumed stripping preparation chamber 150, and then the second gate valve 160 is closed, and then the condensation part 200 is taken out from the stripping preparation chamber 150. Therefore, during the continuous process, the main chamber part 110 can maintain a vacuum. In addition, when the condensation part 200 moves and then moves to the condensation position A2 or moves away from the condensation position A2, the cooling part 170 separates. Before performing the condensation operation at the condensation position A2, the cooling part 170 approaches the condensation part 200 to remove the heat of the condensation part 200, so that the condensation can be continuously performed without affecting the moving process.

[0078] The above has been described centering on the embodiments of the present invention, but the present invention is not limited thereto, and of course, it can be implemented through various deformations.

[0079] Symbol description

[0080] 10: Reactor 11: Connecting pipe

[0081] 15: Heater 17: Heat insulation material layer

[0082] 20: Supply section 100: Continuous manufacturing device

[0083] 110: Main chamber section 111: Housing

[0084] 112: Connection section 113: Deflector

[0085] 115: Anti-escape gas plate 120: Moving section

[0086] 130: Loading chamber 140: First gate valve

[0087] 150: Preparation chamber for removal 160: Second gate valve

[0088] 170: Cooling section 175: Cooling plate

[0089] 180: Removal section 200: Condensation section

[0090] 210: Main body 213: Rear section

[0091] 220: Frame 225: Gas guide plate

Claims

1. A silicon oxide continuous production device, comprising a main chamber connected to a reactor for generating silicon oxide gas, the silicon oxide continuous production device comprising: A connecting pipe connected to the reactor; A condensation portion, the condensation portion comprising a cylindrical body, the cylindrical body having an open surface, the open surface being open toward the connecting pipe side; a moving portion that moves the condensing portion within the main chamber portion; and A cooling unit is configured to be able to move forward and backward toward the main body in the main chamber to cool the main body.

2. The silicon oxide continuous production device according to claim 1, wherein: The main chamber is connected to the vacuum generating part. The condensing part further includes a frame connected to the main body.

3. The silicon oxide continuous production device according to claim 1, wherein: The main body has a cylindrical shape with a central axis extending in a horizontal direction. The cross-sectional area of ​​the main body is larger than the cross-sectional area of ​​the connecting pipe.

4. The silicon oxide continuous production device according to claim 3, wherein: The cooling portion includes a cooling plate through which a cooling fluid flows and a moving unit that moves the cooling plate in the horizontal direction parallel to the central axis of the main body.

5. The silicon oxide continuous production device according to claim 4, wherein: The moving unit is configured to move the cooling plate so that the cooling plate contacts a rear surface portion opposite to the open surface when the silicon oxide gas flows into the main body of the condensation portion.

6. The silicon oxide continuous production device according to claim 5, wherein: The cooling plate comprises a first concave-convex portion, The rear surface of the main body includes a second concave-convex portion, and when the cooling plate contacts the rear surface, the second concave-convex portion cooperates with the first concave-convex portion.

7. The silicon oxide continuous production device according to claim 4, wherein: The cooling part includes a plurality of guide rods extending in the horizontal direction and guiding the cooling plate.

8. The silicon oxide continuous production device according to claim 6, wherein: The silicon oxide continuous manufacturing apparatus includes a escaping gas prevention plate extending around the cooling plate to the inside of the main chamber portion.

9. The silicon oxide continuous production device according to claim 2, wherein: The moving part includes a plurality of rollers and a driving unit. The plurality of rollers are arranged below the frame. The driving unit rotates the rollers.

10. The silicon oxide continuous production device according to claim 2, wherein: The silicon oxide continuous manufacturing device includes a guide plate extending into the main chamber portion with the connecting pipe as the center.

11. The silicon oxide continuous production device according to claim 2, wherein: The frame has a rectangular parallelepiped shape surrounding the main body, and a gas guide plate having a through hole formed therein is disposed on a surface of the frame in the direction of the open surface.

12. The silicon oxide continuous production device according to claim 11, wherein: The diameter of the through hole at the front portion of the gas guide plate is different from that at the rear portion of the gas guide plate.

13. The silicon oxide continuous production device according to claim 2, wherein: The main chamber portion includes a first gate valve and a second gate valve, wherein the first gate valve and the second gate valve are arranged on two sides of the condensing portion in a moving direction in which the moving portion moves. The outer side of the first gate valve is connected to the loading chamber.

14. The silicon oxide continuous production device according to claim 13, wherein: The outer side of the second gate valve is connected to a stripping preparation chamber.

15. The silicon oxide continuous production device according to claim 14, wherein: The loading chamber and the stripping preparation chamber are connected to a vacuum generating unit.

16. The silicon oxide continuous production device according to claim 1, wherein: The silicon oxide continuous manufacturing device includes a scraper and a collecting portion. The scraper is arranged on the upper side of the connection portion connected to the connecting pipe in the main chamber and is arranged to be movable in the up-down direction. The collecting portion is arranged on the lower side of the scraper.

17. A method for continuously producing silicon oxide, comprising: a first main body moving step of moving the cylindrical main body to a condensation position inside the main chamber in a vacuum state; a cooling unit approaching step, moving at least a portion of the cooling unit from the outside of the main body to a side surface of the main body at the condensation position; a condensation step of condensing silicon oxide gas from the reactor inside the main body; A cooling unit detaching step, wherein the cooling unit is detached from the main body; as well as The second main body moving step moves the main body from the condensing position to the cooling position.

18. The method for continuously manufacturing silicon oxide according to claim 17, further comprising: A loading chamber placing step, performed before the first moving step of the main body, placing the main body into the loading chamber in an atmospheric pressure state; a vacuuming step of vacuuming the loading chamber into which the main body is placed by a vacuum generating unit; and The main chamber section loading step includes opening a first gate valve between the evacuated loading chamber and the main chamber section to load the main body into the main chamber section.

19. The method for continuously producing silicon oxide according to claim 18, further comprising: a stripping preparation chamber insertion step, which is performed after the second moving step, and includes opening a second gate valve between the main chamber and the stripping preparation chamber to insert the main body into the vacuum stripping preparation chamber; as well as In the discharge step, the second gate valve is closed, the stripping preparation chamber is adjusted to atmospheric pressure, and then the main body is discharged to the outside.

20. The method for continuously producing silicon oxide according to claim 19, further comprising: a removing step, performed after the discharging step, of removing condensate condensed in the body, The body with the condensate removed is then re-entered into the loading chamber.

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