Silicon-based OLED evaporation mask and manufacturing method thereof

Abstract

The embodiment of the invention discloses a silicon-based OLED evaporation mask and a manufacturing method thereof, the silicon-based OLED evaporation mask comprises a substrate, the upper surface of the substrate is provided with a plurality of grooves, and the upper surface is the surface close to one side of a functional wafer; the grooves are filled with the metal frames, the metal frames are provided with a plurality of display panel areas and a plurality of pixel through holes formed in the display panel areas, and the depth of the pixel through holes is not smaller than the thickness of the metal frames; the ribs are arranged on the metal frame, and the ribs are arranged between the two display panel areas. By additionally arranging the metal frame, the mask plate can be prevented from being deformed in the subsequent OLED evaporation process, and the working stability of the mask plate is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and particularly to a silicon-based OLED evaporation mask and a manufacturing method thereof. Background Art

[0002] With the development of AR technology, AR devices have put forward higher requirements for portability and high brightness of microdisplay chips. At present, although the microdisplays of silicon-based Micro-OLED can meet the requirements to a certain extent. However, since the mask used in the current OLED evaporation process generally adopts an Invar alloy with a thickness of 20 - 30um, the corresponding pixel openings are made through exposure and etching, and then the customer welds the strip-shaped Invar masks to the Mask Frame one by one through a screen stretching machine.

[0003] The manufacturing method uses an Invar plate with a thickness of 20 - 30um and an evaporation shadow of about 5 - 8um, which can meet the requirements of 300 - 600PPI for mobile phone panels. However, such a manufacturing method cannot be combined with the high-resolution silicon-based OLED evaporation technology in the high-resolution microdisplay industry, and a separate CF layer (color filter layer) needs to be set to form a color display. The mask obtained in this way is prone to deformation and has low stability. Summary of the Invention

[0004] Based on this, the present application provides a silicon-based OLED evaporation mask and a manufacturing method thereof to solve the problem that the existing mask manufacturing method is prone to deformation during the OLED evaporation process, resulting in low stability of the mask.

[0005] In a first aspect, a silicon-based OLED evaporation mask includes:

[0006] A substrate, on the upper surface of which there are a plurality of grooves, and the upper surface is the surface closer to the functional wafer side;

[0007] A metal frame filled in each of the grooves, on which there are a plurality of display panel areas and a plurality of pixel through holes provided in the display panel areas, and the depth of the pixel through holes is not less than the thickness of the metal frame;

[0008] Ribs provided on the metal frame, and the ribs are provided between two of the display panel areas.

[0009] Optionally, the groove is a trapezoidal groove, the narrow side of the trapezoidal groove is closer to the functional wafer side, and the wide side of the trapezoidal groove is closer to the evaporation source side.

[0010] Optionally, it further includes: a support substrate, provided on the lower surface of the substrate and bonded to the lower surface.

[0011] In a second aspect, the present application provides a method for manufacturing a silicon-based OLED evaporation mask, including:

[0012] Generating a photoresist pattern on a substrate according to the specification parameters of a target microdisplay panel;

[0013] Etching the substrate with the photoresist pattern using dry etching to obtain a substrate substrate with grooves;

[0014] Using a metal precipitation process to precipitate metal in the grooves to obtain a metal frame;

[0015] Setting a plurality of pixel vias and ribs in the metal frame to obtain a silicon-based OLED evaporation mask.

[0016] Optionally, the step of using a metal precipitation process to precipitate metal in the grooves to obtain a metal frame includes:

[0017] Pretreating the inner surface of the grooves to remove impurities and enhance the adhesion of the metal;

[0018] Depositing a metal material into the grooves by physical vapor deposition (PVD) or chemical vapor deposition (CVD);

[0019] After the metal material is deposited into the grooves, adjusting the deposition temperature, pressure, deposition rate, and gas flow rate to deposit a metal material with a uniform thickness in the grooves to obtain a metal frame.

[0020] Optionally, when using physical vapor deposition (PVD) to precipitate the metal material, argon is used as the carrier gas and it is achieved within a temperature range of 300 - 500 degrees.

[0021] Optionally, after depositing the metal material into the grooves by physical vapor deposition (PVD) or chemical vapor deposition (CVD), it further includes:

[0022] Removing the excess metal in the non-groove area by wet etching or dry etching.

[0023] Optionally, after using the metal precipitation process to precipitate metal in the grooves to obtain a metal frame, it further includes:

[0024] Using a CMP process to planarize the substrate substrate to obtain a combination where the surface of the metal frame is flush with the substrate substrate.

[0025] Optionally, after using the metal precipitation process to precipitate metal in the grooves to obtain a metal frame, it further includes:

[0026] Etch the substrate with the metal frame through the standard yellow light and etching process of semiconductors to obtain a plurality of pixel vias. Among them, a plurality of the pixel vias located between the two ribs form a display panel area.

[0027] Optionally, after setting a plurality of pixel vias and ribs in the metal frame to obtain a silicon-based OLED evaporation mask, the method further includes:

[0028] Fabricate a support substrate and bond and fix the support substrate to the lower surface of the substrate by a bonding process.

[0029] The above method for fabricating a silicon-based OLED evaporation mask, the silicon-based OLED evaporation mask includes a substrate, the upper surface of the substrate is provided with a plurality of grooves, and the upper surface is the surface close to the functional wafer side; a metal frame filled in each groove, the metal frame is provided with a plurality of display panel areas and a plurality of pixel vias provided in the display panel areas, and the depth of the pixel vias is not less than the thickness of the metal frame; ribs provided on the metal frame, and the ribs are provided between two display panel areas. By increasing the metal frame, the deformation of the mask can be prevented during the subsequent OLED evaporation process, and the working stability of the mask can be improved. Description of the Drawings

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0031] Figure 1 It is a schematic structural diagram of a silicon-based OLED evaporation mask provided by an embodiment of the present application;

[0032] Figure 2 It is a flowchart of a method for fabricating a silicon-based OLED evaporation mask provided by an embodiment of the present application;

[0033] Figure 3 It is a schematic structural diagram of the substrate after coating with glue provided by an embodiment of the present application;

[0034] Figure 4 It is a schematic structural diagram of the substrate after coating with glue and etching provided by an embodiment of the present application;

[0035] Figure 5 It is a schematic structural diagram of the mask after metal deposition and CMP provided by an embodiment of the present application;

[0036] Figure 6 It is a schematic structural diagram of the substrate after pixel via etching provided by an embodiment of the present application;

[0037] Figure 7 Schematic diagram of a mask structure provided with an attachment blind hole according to an embodiment of the present application;

[0038] Figure 8 Schematic diagram of the mask structure after the back substrate of the AA area is etched and removed according to an embodiment of the present application;

[0039] Figure 9 Schematic diagram of the enlarged details of the AA area connecting micro-nano blind holes provided by an embodiment of the present application;

[0040] Figure 10 Schematic diagram of the mask structure for thinning the substrate and bonding to the support substrate according to an embodiment of the present application;

[0041] Figure 11 Schematic diagram of the mask structure for completely replacing the original substrate with a support substrate according to an embodiment of the present application. Specific embodiments

[0042] In order to enable those skilled in the art to better understand the solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application.

[0043] In some processes described in the specification, claims and the above-mentioned drawings of the present application, multiple operations that appear in a specific order are included. However, it should be clearly understood that these operations may not be executed in the order in which they appear in this document or may be executed in parallel. They are only used to distinguish different operations, and the serial numbers themselves do not represent any execution order. In addition, these processes may include more or fewer operations, and these operations may be executed in sequence or in parallel. It should be noted that the descriptions such as "first" and "second" in this document are used to distinguish different messages, devices, modules, etc., and do not represent a sequence, nor do they limit that "first" and "second" are of different types.

[0044] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative efforts fall within the scope of protection of the present application.

[0045] See Figure 1, which is a structural diagram of a silicon-based OLED evaporation mask provided by an embodiment of the present application. The silicon-based OLED evaporation mask includes a substrate 10, a metal frame 20, and ribs 30. A plurality of grooves 11 are provided on the substrate 10. Specifically, the grooves 11 are provided on the upper surface of the substrate 10, and the upper surface refers to the surface close to the functional wafer side.

[0046] The metal frame 20 is disposed in the groove 11. Specifically, the metal frame 20 in each groove 11 is prepared in the groove 11 by a high-melting-point metal through a precipitation process. A plurality of display panel areas 21 and fixing areas of the ribs 30 are provided on the metal frame 20. A plurality of pixel through-holes 22 are provided on the display panel area 21, and the depth of each pixel through-hole 22 is not less than the thickness of the metal frame 20.

[0047] In this embodiment, the groove 11 is a trapezoidal groove. The narrow surface of the trapezoidal groove is close to the functional wafer side, and the wide surface of the trapezoidal groove is close to the evaporation source side.

[0048] The arrangement form of the pixel through-holes 22 is periodic distribution and forms a matrix arrangement according to the high-resolution requirements of the silicon-based OLED. Among them, the depth of the pixel through-holes 22 is between 0.1 and 10 microns.

[0049] It should be noted that the metal frame 20 is made of a high-melting-point metal, which includes tungsten, rhenium, osmium, tantalum, molybdenum, niobium, iridium, ruthenium, hafnium, technetium, rhodium, vanadium, and their alloys, and is obtained by precipitating in the groove 11 through a metal precipitation process. Moreover, the thickness of the precipitated metal frame 20 is controlled to be between 0.1 and 5 microns.

[0050] In practical applications, for the setting of the substrate 10 and the metal frame 20, specifically, a substrate 10 is prepared. The substrate 10 is provided with corresponding patterns on the substrate, and then the non-patterned area is etched by etching, and then grooves 11 are formed on the upper surface of the substrate 10. The grooves 11 are filled with metal to form a metal frame 20. Among them, the groove 11 is preferably set in a trapezoidal shape, specifically an inverted trapezoidal shape, and the narrow surface in the reminder is close to the functional wafer side.

[0051] The metal used for the metal frame 20 is a high-melting-point metal, including tungsten, rhenium, osmium, tantalum, molybdenum, niobium, iridium, ruthenium, hafnium, technetium, rhodium, vanadium, and their alloys. The thickness of the metal layer is in the range of 0.1-5 um, and preferably metal W or an alloy of W and Ti is used.

[0052] The metal frame 20 made of a high-melting-point metal can keep the mask plate from deforming during the subsequent OLED evaporation process, improving the working stability of the mask plate. And after the metal deposition process is completed, a CMP process is used to planarize the substrate on the metal deposition surface so that the surface of the metal frame 20 is flush with the surface of the substrate 10. Further ensure that the fitting condition between the FMM and the surface of the OLED material wafer to be deposited is better during the subsequent evaporation process to ensure the reliability of the manufactured device.

[0053] In another embodiment, an attachment blind hole 31 is provided on the rib 30, and the metal frame 20 passes through the attachment blind hole 31 to be connected to the substrate 10.

[0054] It should be noted that when the metal frame 20 is deposited, its metal can form an embedded card slot structure with the substrate 10 through the attachment blind hole 31. During subsequent use, the adhesion between the metal frame 20 and the substrate 10 is better and abnormal detachment will not occur.

[0055] Furthermore, the display panel area 21 is trapezoidal, specifically in the shape of an "inverted trapezoid". Its narrower side is attached to the surface of the functional wafer, and its wider side is close to the evaporation source. Such a setting can improve the PPI of the pixels on the one hand because it is narrower. The "inverted trapezoid" structure is also more conducive to reducing the area of the shadow area and improving the performance of the entire device.

[0056] In another feasible implementation manner, a stress relief via hole is further provided on the rib 30, and the stress relief via hole passes through the rib 30 and the substrate 10.

[0057] The stress relief via hole can be a square hole or a circular hole. The main purpose of its setting is to release the stress of the FMM metal layer while improving the adhesion of the FMM metal layer, and there is no limit to its shape.

[0058] It should be noted that the stress relief via hole can be set in the shape of a via hole. In order to better release the stress, the rib can also be set in a linear shape, a curved shape and other shapes, and there is no limit to its overall morphology, which all belong to the protection scope of the present invention.

[0059] In another feasible implementation manner, the silicon-based OLED evaporation mask plate further includes: a connection blind hole 40, the connection blind hole 40 is arranged in the area between two pixel through holes 22, and the metal frame 20 passes through the connection blind hole 40 to be connected to the substrate 10.

[0060] The depth of the pixel through-hole 22 is between 0.1 - 10 um (only the minimum thickness of the metal layer is 0.1 um, if there is a partial substrate, its thickness can reach up to 10 um). An attachment blind hole 31 is provided at the rib 30, which can further improve the adhesion between the metal frame 20 and the substrate 10 to prevent the abnormal phenomenon of metal shedding. The metal frame 20 is deeply embedded in the substrate 10, improving the reliability of the entire FMM. At the corresponding position on the lower surface of the substrate 10 in the display panel area 21, a "trapezoidal opening" is formed.

[0061] A micro-nano blind hole area connecting blind hole 40 is provided at the interval of the pixel through-holes 22. Between the blind holes in the display panel area 21, the metal in the metal frame 20 on the connecting blind hole 40 in the display panel area 21 is deeply embedded in the substrate 10, further improving the adhesion between the metal frame 20 and the substrate 10 to prevent the abnormal phenomenon of metal shedding, and improving the reliability of the entire FMM.

[0062] In another feasible embodiment, the silicon-based OLED evaporation mask also includes: a support substrate 50, which is provided on the lower surface of the substrate 10 and bonded to the lower surface.

[0063] It should be noted that a support substrate 50 is permanently bonded to the lower surface of the substrate 10. Its material can be a semiconductor material with a low coefficient of thermal expansion such as sapphire or silicon carbide. By thinning the substrate 10 and bonding the support substrate 50, the stability and service life of the FMM mask during operation can be improved. In addition, due to the low coefficient of thermal expansion of the support substrate 50, during the evaporation process, as the substrate temperature rises, the substrate deforms less, so the displacement offset of the pixel through-hole 22 is smaller, and the manufacturing accuracy of the product pixel position can be improved. In addition, as Figure 10 shown, in order to maximize the reliability of the FFM mask, after the substrate 10 is temporarily bonded, the original substrate 10 can be completely removed by etching process and replaced with the support substrate 50.

[0064] The metal used for the metal frame in the mask provided in this embodiment is a high-melting-point metal, including tungsten, rhenium, osmium, tantalum, molybdenum, niobium, iridium, ruthenium, hafnium, technetium, rhodium, vanadium and their alloys. The thickness of the metal layer is only 0.1 um at the thinnest, which can achieve the technical effect of improving the resolution of the silicon-based OLED evaporation mask. At the rib position, when the attachment blind hole is provided, the metal can form an embedded slot structure with the substrate through the attachment blind hole. During subsequent use, the adhesion between the metal and the substrate will be better and no abnormal detachment will occur. Using high-melting-point metals can keep the mask from deforming during the subsequent OLED evaporation process and improve the working stability of the mask.

[0065] As Figure 2As shown in the figure, an embodiment of the present application provides a method for manufacturing a silicon-based OLED evaporation mask, and the method includes the following steps:

[0066] 201. Generate a photoresist pattern on the substrate according to the specification parameters of the target microdisplay panel.

[0067] On the surface of the substrate, a photoresist pattern is fabricated on the surface of the substrate 1 according to the designed specification requirements of the microOLED microdisplay panel, as Figure 3 shown.

[0068] 202. Use dry etching to etch the substrate with the photoresist pattern to obtain a substrate with grooves.

[0069] Specifically, the substrate is etched by dry etching to form grooves 11 for subsequent processes to deposit metal to form the metal frame 20 of the mask. Among them, the grooves 11 are preferably etched into an inverted trapezoid, as specifically Figure 4 shown.

[0070] 203. Use the metal precipitation process to precipitate metal in the grooves to obtain a metal frame.

[0071] Metal is deposited in the grooves 11 on the surface of the etched substrate 10 to form the metal frame 20 of the mask. The metal used is a high-melting-point metal, including tungsten, rhenium, osmium, tantalum, molybdenum, niobium, iridium, ruthenium, hafnium, technetium, rhodium, vanadium and their alloys. Among them, metal W or an alloy of W and Ti is preferably used. Using a high-melting-point metal can prevent the mask from deforming during the subsequent OLED evaporation process and improve the working stability of the mask.

[0072] After the metal deposition process is completed, the substrate 10 is planarized by the CMP process on the metal deposition surface, so that the metal frame 20 is flush with the surface of the substrate 10. Ensure that the bonding condition between the FMM and the surface of the OLED material wafer to be deposited is better during the subsequent evaporation process to ensure the reliability of the fabricated device, as Figure 5 shown.

[0073] Specifically, the inner surface of the groove is pretreated to remove impurities and enhance the adhesion of the metal; the metal material is deposited into the groove by physical vapor deposition (PVD) or chemical vapor deposition (CVD) method; after the metal material is deposited into the groove, the deposition temperature, pressure, deposition rate and gas flow are adjusted to deposit a metal material with a uniform thickness in the groove to obtain a metal frame.

[0074] Among them, when using the physical vapor deposition (PVD) to precipitate the metal material, argon is used as the carrier gas and it is realized within the temperature range of 300 - 500 degrees.

[0075] Further, after depositing the metal material into the groove by physical vapor deposition (PVD) or chemical vapor deposition (CVD) method, the following steps are also included:

[0076] Wet etching or dry etching is used to remove the excess metal in the non-groove area.

[0077] 204. Set a plurality of pixel vias and ribs in the metal frame to obtain a silicon-based OLED evaporation mask.

[0078] Set ribs 30 on the metal frame 20. After depositing metal at the groove 11 between two columns of ribs 30, when the attachment blind holes 31 are set, the metal can form an embedded card slot structure with the substrate 10 through the attachment blind holes 31. During subsequent use, the adhesion between the metal frame 20 and the substrate 10 is better and abnormal detachment will not occur.

[0079] In this step, the substrate 10 with the metal frame 20 is etched by semiconductor standard yellow light and etching process to obtain a plurality of pixel vias 22. Among them, the plurality of pixel vias 22 located between two ribs 30 form a display panel area 21. The etching depth of the pixel vias 22 is 1-5um lower than the thickness of the metal frame, as Figure 6 shown.

[0080] The display panel area 21 is set in an inverted trapezoidal shape. The narrower side of the "inverted trapezoid" is attached to the surface of the functional wafer, and the wider side is close to the evaporation source. On the one hand, the narrower width can increase the PPI of the pixel. The "inverted trapezoid" structure is also more conducive to reducing the area of the shadow region and improving the performance of the entire device.

[0081] To further improve the adhesion between the metal and the substrate to prevent abnormal metal shedding, attachment blind holes 31 can be set at the ribs 30, so that the metal frame 20 is deeply embedded in the substrate 10, improving the reliability of the entire FMM, as Figure 7 shown.

[0082] As Figure 8 shown, through semiconductor standard photolithography and etching process on the back of the substrate 10, the material of the substrate 10 at the corresponding position of the display panel area 21 is thinned and removed to form a "trapezoidal opening", and etching is carried out until the reserved substrate 1-5um penetrates at the position of the pixel vias 22 to form the pixel vias 22.

[0083] Refer to Figure 7 and 8, To further improve the adhesion between the metal frame 20 and the substrate 10 to prevent abnormal metal peeling, micro-nano blind holes 40 can be provided at intervals of the pixel vias 22. The metal frame 20 on the connection blind holes 40 in the display panel area 21 is deeply embedded into the substrate 10, improving the reliability of the entire FMM during use.

[0084] Certainly, if further reducing the thickness of the FFM and increasing the PPI of the evaporated OLED device are considered, the material of the substrate 10 behind the pixel vias 22 deposited in the display panel area 21 will be completely removed, and at this time, there will be no connection blind holes 40 in the display panel area 21.

[0085] In this embodiment, to improve the working stability of the mask substrate, it further includes: fabricating a support substrate 50 and bonding and fixing the support substrate 50 to the lower surface of the substrate 10 using a bonding process.

[0086] As Figure 9 shown, the substrate 10 is temporarily bonded to the carrier plate face-up, and then the back surface of the substrate 10 is thinned to a thickness of 10 - 50 μm through a semiconductor standard CMP process, and then the support substrate 50 is permanently bonded and fixed to the back surface of the substrate 10 using a bonding process. The material of the support substrate 50 can be a semiconductor material with a low coefficient of thermal expansion such as sapphire or silicon carbide. Thinning the substrate 10 and bonding the support substrate 50 can improve the stability and service life of the FMM mask substrate during operation. Additionally, due to the low coefficient of thermal expansion of the support substrate 50, during the evaporation process, as the substrate temperature rises, the substrate deformation is small, so the displacement offset of the pixel vias 22 is small, and the manufacturing accuracy of the product pixel positions can be improved.

[0087] In addition, as Figure 10 and 11 shown, to maximize the reliability of the FFM mask substrate, after temporarily bonding the substrate 10, the original substrate 10 can be completely removed through an etching process and replaced with the support substrate 50.

[0088] Stress relief vias are also provided on the rib 30, and the stress relief vias penetrate through the rib 30 and the substrate 10. The stress relief vias can be square holes or circular holes. The main purpose of their setting is to release the stress of the FMM metal layer while improving the adhesion of the FMM metal layer, and there is no limitation on its shape. Additionally, the stress relief vias can be set in the shape of vias, or can also be set as linear, curved, and other shapes, and there is no limitation on their overall morphology, all of which fall within the protection scope of the present invention.

[0089] It should be understood that although the steps in the flowchart of the accompanying drawings are shown sequentially in the direction of the arrows, these steps are not necessarily executed sequentially in the order indicated by the arrows. Unless otherwise clearly stated in this document, there is no strict order restriction for the execution of these steps, and they can be executed in other orders. Moreover, at least a part of the steps in the flowchart of the accompanying drawings may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily executed at the same time, but can be executed at different times, and their execution order is not necessarily sequential, but can be executed alternately or in turn with at least a part of other steps or sub-steps or stages of other steps.

[0090] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.

[0091] The above-described embodiments merely represent several implementation manners of the present application. The description is relatively specific and detailed, but it should not be construed as a limitation on the patent scope of the present application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.

Claims

1. A silicon-based OLED evaporation mask, characterized in that: include: A base substrate, wherein a plurality of grooves are provided on an upper surface of the base substrate, and the upper surface is a surface close to a side of the functional wafer; A metal frame filled in each of the grooves, wherein the metal frame is provided with a plurality of display panel areas and a plurality of pixel through holes provided in the display panel areas, and the depth of the pixel through holes is not less than the thickness of the metal frame; A rib is arranged on the metal frame, and the rib is arranged between the two display panel areas.

2. The silicon-based OLED evaporation mask according to claim 1, characterized in that: The groove is a trapezoidal groove, a narrow side of the trapezoidal groove is close to one side of the functional wafer, and a wide side of the trapezoidal groove is close to one side of the evaporation source.

3. The silicon-based OLED evaporation mask according to claim 1, characterized in that: Also includes: The supporting substrate is arranged on the lower surface of the base substrate and bonded to the lower surface.

4. A method for making a silicon-based OLED evaporation mask, characterized in that: The production method comprises: generating a photoresist pattern on a substrate according to specification parameters of a target micro display panel; The substrate with the photoresist pattern is etched by dry etching to obtain a substrate base with grooves; Using a metal precipitation process, metal is deposited in the groove to obtain a metal frame; A plurality of pixel through holes and ribs are arranged in the metal frame to obtain a silicon-based OLED evaporation mask.

5. The manufacturing method according to claim 4, characterized in that: The method of using a metal precipitation process to deposit metal in the groove to obtain a metal frame includes: Pre-treating the inner surface of the groove to remove impurities and enhance metal adhesion; Depositing a metal material into the groove by a physical vapor deposition (PVD) or chemical vapor deposition (CVD) method; After the metal material is deposited in the groove, the deposition temperature, gas pressure, deposition rate and gas flow rate are adjusted to deposit the metal material with uniform thickness in the groove to obtain a metal frame.

6. The method according to claim 5, characterized in that: When the physical vapor deposition (PVD) is used to deposit the metal material, argon is used as a carrier gas and the deposition is carried out at a temperature ranging from 300 to 500 degrees.

7. The manufacturing method according to claim 5, characterized in that: After the metal material is deposited into the groove by physical vapor deposition (PVD) or chemical vapor deposition (CVD), the method further includes: Wet or dry etching is used to remove excess metal from non-recessed areas.

8. The manufacturing method according to claim 4, characterized in that: After the metal is deposited in the groove by the metal deposition process to obtain the metal frame, the method further includes: The substrate is flattened by using a CMP process to obtain a combination of a metal frame and the substrate having a flush surface.

9. The manufacturing method according to claim 4, characterized in that: After the metal is deposited in the groove by the metal deposition process to obtain the metal frame, the method further includes: The substrate with the metal frame is etched by a semiconductor standard yellow light and etching process to obtain a plurality of pixel through holes, wherein the plurality of pixel through holes located between two of the ribs form a display panel area.

10. The manufacturing method according to claim 9, characterized in that: After a plurality of pixel through holes and ribs are provided in the metal frame to obtain a silicon-based OLED evaporation mask, the method further includes: A supporting substrate is manufactured, and the supporting substrate is bonded and fixed to the lower surface of the base substrate by a bonding process.

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