Partition sputtering device and control method of magnetron sputtering atom deposition direction thereof

Abstract

The invention belongs to the technical field of semiconductor equipment, and particularly relates to a partition sputtering device and a control method for the magnetron sputtering atom deposition direction of the partition sputtering device. A sealing cavity is formed in a shell of the partitioned sputtering device, a target material and a base are arranged in the sealing cavity, the base is connected with the shell and used for installing a substrate, and the target material is used for sputtering target atoms to the substrate; magnetic control assemblies and a shielding piece are further arranged in the sealing cavity, the magnetic control assemblies comprise the first magnetic control assembly and the second magnetic control assembly, and the first magnetic control assembly or the second magnetic control assembly can be driven by the air cylinder to move on the sliding rail relative to the target material, so that the magnetic control assemblies can only conduct sputtering on the center area of the target material or conduct sputtering on the center area and the edge area of the target material at the same time; the shielding piece is used for shielding the edge area of the target material, so that the magnetic control assembly can only conduct sputtering on the center area of the target material or conduct sputtering on the center area and the edge area of the target material at the same time. Two-step sputtering is carried out by adopting the partitioned sputtering device disclosed by the invention, holes can be filled with a high step coverage rate, and the flatness of the hole filling surface is increased.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor devices, and particularly relates to a partition sputtering device and a method for controlling the magnetron sputtering atomic deposition direction. Background Art

[0002] In integrated circuits, bipolar transistors and resistors are connected by aluminum film lines on SiO 2 The process is as follows: device contact holes are etched on the SiO 2 layer, an aluminum thin film is deposited, and an aluminum interconnect pattern is formed through photolithography and chemical etching. This simple and easy aluminum interconnect technology has been successfully used in the research and production of integrated chips. With the increase in integrated circuit device density and function enhancement, more metal interconnections are required. In early CMOS devices, highly doped polysilicon lines were used as local interconnections, and then a double-layer interconnect was formed with aluminum or Al-Si on the local interconnections. In the double-layer interconnect technology, before depositing the second layer of metal, it is necessary to planarize the interlayer dielectric (ILD). The early planarization methods were resist etch-back and spin-on silica gel processes. This local planarization of the interlayer dielectric can improve the step coverage characteristics of the upper-layer metal. However, if a third-layer metal interconnection line is prepared, it is difficult to ensure its step coverage.

[0003] In order to form three or more metal interconnections, a global planarization process of the interlayer dielectric, that is, chemical mechanical polishing (CMP) technology, has been developed. With this process, the metal will be deposited on the completely flat dielectric surface. However, another problem has arisen, that is, the through holes in the interlayer dielectric after planarization are of different depths, and it is difficult to uniformly fill the deeper through holes with traditional PVD metal deposition technology, or there are thick surface depressions and insufficient flatness after filling.

[0004] Magnetron sputtering is one of the physical vapor deposition technologies. Generally, a permanent magnet or an electromagnet is placed on the back of the target to confine secondary electrons and enhance the plasma density. However, the magnetic field intensity distribution near the target surface is not uniform, which will lead to non-uniform plasma distribution. The non-uniform plasma distribution directly affects the sputtering uniformity, thereby affecting the target utilization rate. The plasma density distribution in a common magnetron sputtering device is strong in the center and weak at the edges. The higher the plasma density, the higher the ionization rate of metal atoms. This is crucial for the hole filling or groove process because the step coverage of the hole or groove is positively correlated with the ionization rate of the target metal atoms.

[0005] The main difficulties in filling holes with aluminum metal are the low step coverage rate, or low filling ability and inability to completely fill the micro-holes, or after the micro-holes are completely filled, a relatively deep depression of aluminum metal will still remain above the micro-holes. When the aluminum metal thin film crosses the steps on the substrate surface, it will deviate from the ideal situation, the film will be thinner or cracks and voids will appear. The step coverage rate directly affects the conductivity of the metal wiring. The top metal layer has a large current load and the wire has a large heat dissipation. If the step coverage rate is low, the current density passing through the wire will be high, and the wire is prone to fusing. At the same time, when the step coverage rate is low, the contact resistance will increase, and the delay and power consumption of the circuit will also increase accordingly. Moreover, the thickness of the metal coverage on the steps is uneven, and voids generated by electromigration are likely to occur. Summary of the Invention

[0006] The object of the present invention is to overcome the deficiencies existing in the prior art and provide a partition sputtering device and a control method for the atomic deposition direction of magnetron sputtering. The present invention adopts a two-step sputtering method. First, the atoms in the central region of the target are sputtered, and the atoms are deposited on the wafer at a large incident angle, which can fill the holes with a high step coverage rate. When the holes are filled with aluminum, a depression region close to the hole shape will be generated above the holes. Then, the atoms in the central region and the edge region of the target are sputtered. The atoms sputtered from the central region continue to fill the holes, and the sputtered atoms in the edge region can migrate to the hole sidewalls at a small incident angle, which can increase the flatness of the hole filling surface.

[0007] To achieve the above technical objectives, the technical solutions adopted in the embodiments of the present invention are as follows: In the first aspect, an embodiment of the present invention provides a partition sputtering device, including a housing. A sealed cavity is arranged inside the housing, a target and a base are arranged inside the sealed cavity. The base is connected to the housing and is used for mounting a substrate, and the target is used for sputtering target atoms onto the substrate; A magnetron component and a shielding member are further arranged inside the sealed cavity. The magnetron component is driven by a motor and includes a first magnetron component and a second magnetron component. The first magnetron component or the second magnetron component can move relative to the target on a slide rail under the drive of a cylinder, so that the magnetron component can only sputter the central region of the target or sputter the central region and the edge region of the target simultaneously; The shielding member is used for shielding the edge region of the target, so that the magnetron component can only sputter the central region of the target or sputter the central region and the edge region of the target simultaneously.

[0008] Further, the target includes a central region and an edge region, where d≤1 / 2D, d is the diameter of the central region, and D is the diameter of the target; An insulating block is arranged between the central region and the edge region. The insulating block is used to separate the central region and the edge region, so that the power supply can supply power to the central region alone; When the power supply supplies power to the central region of the target alone, it is denoted as working condition A; When the power supply supplies power to both the central region and the edge region of the target simultaneously, it is denoted as working condition B.

[0009] Furthermore, both the first magnetron assembly and the second magnetron assembly are arranged on the back plate, and the back plate is connected to the housing; When both the first magnetron assembly and the second magnetron assembly are located at the central position of the back plate, only the central region of the target is sputtered, denoted as working condition A; when the first magnetron assembly or the second magnetron assembly is located at the central position of the back plate and the second magnetron assembly or the first magnetron assembly is located at the edge of the back plate, the central region and the edge region of the target can be sputtered simultaneously, denoted as working condition B.

[0010] Furthermore, the shielding member can undergo reversible deformation in the vertical direction. When the shielding member is in the normal state, it can shield the edge region of the target, and the magnetron assembly only sputters the central region of the target, denoted as working condition A; When the shielding member is compressed, it does not shield the edge region of the target, and the magnetron assembly sputters both the central region and the edge region of the target simultaneously, denoted as working condition B.

[0011] In a second aspect, an embodiment of the present invention provides a method for controlling the atomic deposition direction of magnetron sputtering, which is carried out on the partitioned sputtering device described in the first aspect, and includes the following steps: Step S1, operating working condition A: only sputtering the central region of the target; Step S2, operating working condition B: sputtering both the central region and the edge region of the target simultaneously; Step S3, sequentially repeating steps S1 and S2 until the holes on the substrate are filled to form a relatively flat surface.

[0012] Furthermore, the selected diameter of the target is 320 - 322 mm, and the distance between the target and the substrate is 100 - 150 mm.

[0013] Furthermore, the parameters in working condition A are: the temperature of the substrate is set to 300 - 400 °C, the chamber vacuum degree is maintained below 5.0×10 -8 Torr, argon with a flow rate of 30 - 60 sccm is introduced, the chamber reaction pressure is 1.8 - 3.6 mTorr, the input power of the target is set to 2000 - 8000 W, and the sputtering time is 60 - 120 s.

[0014] Furthermore, the parameters in working condition B are: the substrate temperature is set to 300 - 400 °C, the chamber vacuum degree is maintained at 5.0×10-8 Below Torr, argon gas with a flow rate of 30 - 60 sccm is introduced, the reaction pressure in the chamber is 1.8 - 3.6 mTorr, the input power of the target is set to 10000 - 20000 W, and the sputtering time is 120 - 180 s.

[0015] The beneficial effects brought by the technical solution provided by the embodiments of the present invention are: In the present invention, by first sputtering the atoms in the central region of the target, the atoms are deposited on the wafer at a large incident angle and can fill the holes with a high step coverage rate. Then, the atoms in the central region and the edge region of the target are sputtered simultaneously. The atoms sputtered from the central region continue to fill the holes, and the atoms sputtered from the edge region can fill the side walls of the holes at a small incident angle. After two-step sputtering, a full-fill state is obtained, forming a relatively flat surface. Description of the Drawings

[0016] Figure 1 It is a schematic diagram of the movement directions of target atoms from different sputtering regions during the deposition on the wafer surface.

[0017] Among them, Figure 1 A is a schematic diagram of the movement direction of target atoms in the central region during the deposition on the wafer surface; Figure 1 B is a schematic diagram of the movement directions of target atoms in the central region and the edge region during the simultaneous deposition on the wafer surface.

[0018] Figure 2 It is a schematic structural diagram of the partitioned sputtering device in Embodiment 1 of the present invention.

[0019] Figure 3 is Figure 2 A schematic cross-sectional structure diagram of the target in the partitioned sputtering device.

[0020] Figure 4 It is a schematic structural diagram in Embodiment 2 where both the first magnetron component and the second magnetron component are located at the center position of the backplane.

[0021] Figure 5 It is a schematic structural diagram in Embodiment 2 where the first magnetron component is located at the edge position of the backplane and the second magnetron component is located at the center position of the backplane.

[0022] Figure 6 It is a schematic cross-sectional structure diagram when the shielding member is in the original state and shields the edge region of the target.

[0023] Figure 7 It is a schematic cross-sectional structure diagram when the shielding member is in the compressed state and does not shield the edge region of the target.

[0024] Figure 8 It is an SEM image of the hole filling of the aluminum film obtained in Embodiment 2.

[0025] Figure 9 It is the SEM image of the aluminum thin film filling holes obtained in Comparative Example 1.

[0026] Figure 10 It is the SEM image of the aluminum thin film filling holes obtained in Comparative Example 2.

[0027] Explanation of the reference numerals in the drawings: 1 - target; 2 - magnetron assembly; 3 - shielding member; 4 - air cylinder; 5 - slide rail; 6 - insulating block; 7 - backplane; 8 - motor; 21 - first magnetron assembly; 22 - second magnetron assembly; 23 - first pin; 24 - second pin; 11 - central region; 12 - edge region; 13 - first conductive ring; 14 - second conductive ring; 31 - elastic tube; 32 - second sealing cavity; 33 - opening. Detailed implementation manners

[0028] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by orientation words such as "inside, outside", "above, below", "left, right", etc. is usually based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description. Without contrary explanation, these orientation words do not indicate and imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the protection scope of the present invention.

[0029] In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0030] Embodiment 1 As Figure 2 and 3 shown, a partition sputtering device includes a housing. A first sealing cavity is provided inside the housing. A target 1 and a base are provided inside the first sealing cavity. The base is connected to the housing and is used to mount a substrate. The target 1 is used to sputter target atoms onto the substrate; A magnetron assembly 2 and a shielding member 3 are further provided in the sealing cavity. The magnetron assembly 2 is driven by a motor 8 and includes a first magnetron assembly 21 and a second magnetron assembly 22. The first magnetron assembly 21 can move relative to the target 1 on the slide rail 5 under the drive of the air cylinder 4, so that the magnetron assembly 2 can sputter the central region 11 of the target 1 or sputter both the central region 11 and the edge region 12 of the target 1 at the same time; The shielding member 3 is used to shield the edge region 12 of the target 1, so that the magnetron assembly 2 can sputter only the central region 11 of the target 1 or sputter both the central region 11 and the edge region 12 of the target 1 at the same time.

[0031] The target 1 includes a central region 11 and a peripheral region 12, where d ≤ 1 / 2D, d is the diameter of the central region 11, and D is the diameter of the target 1; An insulating block 6 is provided between the central region 11 and the peripheral region 12. The insulating block 6 is used to separate the central region 11 and the peripheral region 12 so that the power supply can supply power to the central region 11 alone. Specifically, a first conductive ring 13 and a second conductive ring 14 are respectively provided in the central region 11 and the peripheral region 12 of the target; When the power supply supplies power to the central region 11 of the target 1 alone, the first conductive ring 13 conducts electricity, denoted as operating condition A; When the power supply supplies power to both the central region 11 and the peripheral region 12 of the target 1 simultaneously, the first conductive ring 13 and the second conductive ring 14 conduct electricity simultaneously, denoted as operating condition B.

[0032] Both the first magnetron assembly 21 and the second magnetron assembly 22 are provided on the back plate 7, and the back plate 7 is connected to the housing; When both the first magnetron assembly 21 and the second magnetron assembly 22 are located at the central position of the back plate 7, only the central region 11 of the target 1 is sputtered, denoted as operating condition A; when the second magnetron assembly 22 is located at the central position of the back plate 7 and the first magnetron assembly 21 is located at the edge of the back plate 7, the central region 11 and the peripheral region 12 of the target 1 can be sputtered simultaneously, denoted as operating condition B.

[0033] Specifically, the air cylinder 4 drives the magnetron assembly 2 to move along the slide rail 5. When the second magnetron assembly 22 moves to the edge position of the back plate 7, the first pin 23 and the second pin 24 respectively contact the first conductive ring 13 and the second conductive ring 14. The central region 11 of the target 1 is connected to the power supply. The central region 11 of the target 1 contacts the first conductive ring 13 through the second pin 24, and the electricity of the central region 11 of the target 1 is connected to the peripheral region of the target 1 through the first pin 23, realizing that one power supply connects the central region 11 and the peripheral region 12.

[0034] The shielding member 3 can undergo reversible deformation in the vertical direction. When the shielding member 3 is in its original state, it can shield the peripheral region 11 of the target 1, and the magnetron assembly 2 only sputters the central region 11 of the target 1, denoted as operating condition A; When the shielding member 3 is compressed, it does not shield the peripheral region 11 of the target 1, and the magnetron assembly 2 sputters both the central region 11 and the peripheral region 12 of the target 1 simultaneously, denoted as operating condition B.

[0035] Specifically, the shielding member 3 includes two elastic tubes 31 and a second sealing cavity 32 located therebetween. An opening 33 is provided at the bottom of the second sealing cavity 32. The vacuum pump is connected to the sealing cavity 32 through the opening 33. When the vacuum pump operates to evacuate the sealing cavity 32, after being evacuated to a certain extent, the elastic tubes 31 will be compressed, and the entire shielding member 3 will move downward, without blocking the edge of the target 1. The magnetron assembly 2 can simultaneously sputter the central region 11 and the edge region 12 of the target 1. After the evacuation is completed, air or other gases enter the second sealing cavity 32 from the opening 33, and the two elastic tubes 31 deform to the initial state. At this time, the shielding member 3 blocks the edge region 12 of the target 1, and the magnetron assembly 2 only sputters the central region 11 of the target 1.

[0036] In addition, the present invention also provides a method for controlling the atomic deposition direction of magnetron sputtering, which is carried out on the above-mentioned partitioned sputtering device and includes the following steps: Step S1, operating condition A: only sputtering the central region 11 of the target 1; Step S2, operating condition B: simultaneously sputtering the central region 11 and the edge region 12 of the target 1; Step S3, sequentially repeat steps S1 and S2 until the holes on the substrate are filled to form a relatively flat surface.

[0037] The selected diameter of the target 1 is 320 - 322 mm, and the distance between the target 1 and the substrate is 100 - 150 mm.

[0038] The parameters in operating condition A are: the temperature of the substrate is set to 300 - 400 °C, the chamber vacuum degree is maintained below 5.0×10 - 8 Torr, argon gas with a flow rate of 30 - 60 sccm is introduced, the chamber reaction pressure is 1.8 - 3.6 mTorr, the target input power is set to 2000 - 8000 W, and the sputtering time is 60 - 120 s.

[0039] Further, the parameters in operating condition B are: the substrate temperature is set to 300 - 400 °C, the chamber vacuum degree is maintained below 5.0×10 -8 Torr, argon gas with a flow rate of 30 - 60 sccm is introduced, the chamber reaction pressure is 1.8 - 3.6 mTorr, the target input power is set to 10000 - 20000 W, and the sputtering time is 120 - 180 s.

[0040] The following further details the method for controlling the atomic deposition direction of magnetron sputtering of the present invention in combination with Examples 2 - 4.

[0041] Example 2 A method for controlling the atomic deposition direction of magnetron sputtering includes the following steps: Step S1. Set the cavity state to working condition A: The cylinder 4 drives the first magnetron assembly 21 to move to the center position of the backplane 7. At this time, both the first magnetron assembly 21 and the second magnetron assembly 22 are located at the center position of the backplane 7. As shown in Figure 4 shown, transfer the wafer into the magnetron sputtering vacuum cavity, set the substrate temperature to 400 °C, keep the cavity vacuum below 5.0×10 -8 Torr, introduce argon with a flow rate of 50 sccm, set the cavity reaction pressure to 3.0 mTorr, set the target input power to 8000 W, and the sputtering time to 120 s. Only sputter the central area 11 of the target 1; Step S2. Set the cavity state to working condition B: The cylinder 4 drives the first magnetron assembly 21 to move to the edge position of the backplane 7. At this time, the first magnetron assembly 21 is located at the edge position of the backplane 7, while the second magnetron assembly 22 is located at the center position of the backplane 7. As shown in Figure 5 shown, transfer the wafer into the magnetron sputtering vacuum cavity, set the substrate temperature to 400 °C, keep the cavity vacuum below 5.0×10 -8 Torr, introduce argon with a flow rate of 50 sccm, set the cavity reaction pressure to 3.0 mTorr, set the target input power to 16000 W, and the sputtering time to 180 s. Sputter both the central area 11 and the edge area 12 of the target 1 simultaneously; The above control method is based on the SJI-SEMI Depomerits P188 Pro PVD platform. The target is an aluminum target with a purity of 99.999%, the target diameter is 320 mm, and the distance between the target and the wafer is 150 mm.

[0042] Observe the via filling condition of the wafer cross-section under a scanning electron microscope, as shown in Figure 8 shown. As can be seen from Figure 8 this, through the two-step sputtering method in the present invention, a full-fill state of the vias can be achieved, there are no voids or gaps in the holes, and the surface is relatively flat.

[0043] Example 3 A method for controlling the atomic deposition direction of magnetron sputtering, comprising the following steps: Step S1. Set the cavity state to working condition A: The shielding member 3 shields the edge area 11 of the target 1. As shown in Figure 6 shown, transfer the wafer into the magnetron sputtering vacuum cavity, set the substrate temperature to 400 °C, keep the cavity vacuum below 5.0×10 -8 Torr, introduce argon with a flow rate of 50 sccm, set the cavity reaction pressure to 3.0 mTorr, set the target input power to 8000 W, and the sputtering time to 120 s. Only sputter the central area 11 of the target 1; Step S2, set the cavity state to operating condition B: Use a vacuum pump to evacuate the sealed cavity 32 of the shielding member 3 until the shielding member 3 descends to a position where it does not block the edge of the target 1. As Figure 7 shown, transfer the wafer into the magnetron sputtering vacuum cavity. Set the substrate temperature to 400 °C, keep the cavity vacuum below 5.0×10 -8 Torr, introduce argon gas with a flow rate of 50 sccm, set the cavity reaction pressure to 3.0 mTorr, set the target input power to 16000 W, and the sputtering time to 180 s. At the same time, sputter the central region 11 and the edge region 12 of the target 1; The above control method is based on the SJI-SEMI Depomerits P188 Pro PVD platform. The target is an aluminum target with a purity of 99.999%, the target diameter is 320 mm, and the distance between the target and the wafer is 150 mm.

[0044] Example 4 A method for controlling the atomic deposition direction of magnetron sputtering, comprising the following steps: Step S1, set the cavity state to operating condition A: Only energize the central region 11 of the target 1, transfer the wafer into the magnetron sputtering vacuum cavity. Set the substrate temperature to 400 °C, keep the cavity vacuum below 5.0×10 -8 Torr, introduce argon gas with a flow rate of 50 sccm, set the cavity reaction pressure to 3.0 mTorr, set the target input power to 8000 W, and the sputtering time to 120 s. Only sputter the central region 11 of the target 1; Step S2, set the cavity state to operating condition B: Energize both the central region 11 and the edge region 12 of the target 1 at the same time, transfer the wafer into the magnetron sputtering vacuum cavity. Set the substrate temperature to 400 °C, keep the cavity vacuum below 5.0×10 -8 Torr, introduce argon gas with a flow rate of 50 sccm, set the cavity reaction pressure to 3.0 mTorr, set the target input power to 16000 W, and the sputtering time to 180 s. At the same time, sputter the central region 11 and the edge region 12 of the target 1; The above control method is based on the SJI-SEMI Depomerits P188 Pro PVD platform. The target is an aluminum target with a purity of 99.999%, the target diameter is 320 mm, and the distance between the target and the wafer is 150 mm.

[0045] Comparative Example 1 A method for controlling the atomic deposition direction of magnetron sputtering, comprising the following steps: Step S1: Set the cavity state to operating condition A. The cylinder 4 drives the first magnetron assembly 21 to move to the center position of the backplane 7. At this time, both the first magnetron assembly 21 and the second magnetron assembly 22 are located at the center position of the backplane 7. Transfer the wafer into the magnetron sputtering vacuum cavity. Set the substrate temperature to 400°C, keep the cavity vacuum below 5.0×10 -8 Torr, introduce argon with a flow rate of 50 sccm, set the cavity reaction pressure to 3.0 mTorr, set the target input power to 8000 W, and the sputtering time to 120 s. Only sputter the central region 11 of the target 1; Step S2: Set the target input power to 16000 W, keep other conditions unchanged, and the sputtering time to 180 s.

[0046] The above control method is based on the SJI-SEMI Depomerits P188 Pro PVD platform. Select an aluminum target with a target purity of 99.999%, a target diameter of 320 mm, and a distance of 150 mm between the target and the wafer.

[0047] Observe the via filling situation of the wafer cross-section under a scanning electron microscope, as shown in Figure 9. Figure 9 It can be seen that by the method of only sputtering the central region of the target, although a high step coverage of via filling can be achieved, there is still a certain degree of depression on the surface.

[0048] Comparative Example 2 A control method for the direction of magnetron sputtering atomic deposition, comprising the following steps: Step S1: The cylinder 4 drives the first magnetron assembly 21 to move to the edge position of the backplane 7. At this time, the first magnetron assembly 21 is located at the edge position of the backplane 7, while the second magnetron assembly 22 is located at the center position of the backplane 7. Transfer the wafer into the magnetron sputtering vacuum cavity. Set the substrate temperature to 400°C, keep the cavity vacuum below 5.0×10 -8 Torr, introduce argon with a flow rate of 50 sccm, set the cavity reaction pressure to 3.0 mTorr, set the target input power to 8000 W, and the sputtering time to 120 s. Sputter both the central region 11 and the edge region 12 of the target 1 simultaneously; Step S2: Set the target input power to 16000 W, keep other conditions unchanged, and the sputtering time to 180 s.

[0049] The above control method is based on the SJI-SEMI Depomerits P188 Pro PVD platform, using the conventional sputtering method, that is, the method of sputtering both the central and edge regions of the target. Select an aluminum target with a target purity of 99.999%, a target diameter of 320 - 322 mm, and a distance of 150 mm between the target and the wafer.

[0050] The filling situation of the via holes in the wafer cross-section is observed under a scanning electron microscope, as shown in Figure 10. From Figure 10 it can be seen that by using the conventional sputtering method, that is, the method of sputtering the center and edge regions of the target at the same time, voids exist in the holes and the via hole filling fails.

[0051] As Figure 1 shown in A, in the present invention, by first sputtering the atoms in the central region of the target, the atoms are deposited on the wafer at a relatively large incident angle and can fill the via holes with a high step coverage. Then, as Figure 1 shown in B, the atoms in the central region and the edge region of the target are sputtered at the same time. The atoms sputtered from the central region continue to fill the via holes, and the atoms sputtered from the edge region can be filled into the sidewalls of the holes at a relatively small incident angle. After two-step sputtering, a full-fill state is obtained, forming a relatively flat surface.

[0052] Finally, it should be noted that the above specific embodiments are only used to illustrate the technical solutions of the present invention and not to limit them. Although the present invention has been described in detail with reference to the examples, those of ordinary skill in the art should understand that the technical solutions of the present invention can be modified or equivalently replaced without departing from the spirit and scope of the technical solutions of the present invention, and they should all be covered within the scope of the claims of the present invention.

Claims

1. A zoned sputtering device, characterized in that: It comprises a shell, a sealed cavity is arranged in the shell, a target material (1) and a base seat are arranged in the sealed cavity, the base seat is connected to the shell and is used to install a substrate, and the target material (1) is used to sputter target atoms onto the substrate; A magnetron assembly (2) and a shield (3) are also provided in the sealed cavity. The magnetron assembly (2) is driven by a motor (8) and comprises a first magnetron assembly (21) and a second magnetron assembly (22). The first magnetron assembly (21) or the second magnetron assembly (22) is driven by a cylinder (4) to move relative to the target material (1) on a slide rail (5), so that the magnetron assembly (2) can sputter only the central region (11) of the target material (1) or simultaneously sputter the central region (11) and the edge region (12) of the target material (1); The shield (3) is used to shield the edge region (12) of the target material (1), so that the magnetron component (2) can only sputter the central region (11) of the target material (1) or simultaneously sputter the central region (11) and the edge region (12) of the target material (1); The target material (1) comprises a central region (11) and an edge region (12), wherein d≤1 / 2D, d is the diameter of the central region (11), and D is the diameter of the target material (1); An insulating block (6) is provided between the central area (11) and the edge area (12), and the insulating block (6) is used to separate the central area (11) from the edge area (12), so that a power source can supply power to the central area (11) alone; When the power source supplies power to the central area (11) of the target material (1) alone, this is referred to as working condition A; When the power source supplies power to both the central region (11) and the edge region (12) of the target material (1) at the same time, this is referred to as operating condition B.

2. The zoned sputtering device according to claim 1, characterized in that: The first magnetron assembly (21) and the second magnetron assembly (22) are both arranged on the back plate (7), and the back plate (7) is connected to the shell; When the first magnetron assembly (21) and the second magnetron assembly (22) are both located at the center of the back plate (7), only the center area (11) of the target material (1) is sputtered, which is recorded as working condition A; when the first magnetron assembly (21) or the second magnetron assembly (22) is located at the center of the back plate (7), and the second magnetron assembly (22) or the first magnetron assembly (21) is located at the edge of the back plate (7), the center area (11) and the edge area (12) of the target material (1) can be sputtered at the same time, which is recorded as working condition B.

3. The zoned sputtering device according to claim 1, characterized in that: The shielding member (3) is capable of reversibly deforming in a vertical direction. When the shielding member (3) is in a normal state, it is capable of shielding an edge region (11) of the target material (1). The magnetron assembly (2) only sputters a central region (11) of the target material (1), which is recorded as working condition A. When the shielding member (3) is compressed, the edge region (11) of the target material (1) is not blocked, and the magnetron assembly (2) simultaneously sputters the central region (11) and the edge region (12) of the target material (1), which is recorded as working condition B.

4. A method for controlling the deposition direction of magnetron sputtering atoms, characterized in that: The method is carried out on a zoned sputtering device according to any one of claims 1 to 3, comprising the following steps: Step S1, operating condition A: sputtering only the central area (11) of the target material (1); Step S2, operating condition B: sputtering the central area (11) and the edge area (12) of the target material (1) simultaneously; Step S3, repeating steps S1 and S2 in sequence until the holes on the substrate are filled to form a relatively flat surface.

5. The method for controlling the deposition direction of magnetron sputtering atoms according to claim 4, characterized in that: The target material (1) has a diameter of 320-322 mm, and the distance between the target material (1) and the substrate is 100-150 mm.

6. The method for controlling the deposition direction of magnetron sputtering atoms according to claim 4, characterized in that: The parameters of working condition A are: the temperature of the substrate is set at 300-400℃, and the vacuum degree of the chamber is maintained at 5.0×10 -8 Torr or less, introduce argon gas at a flow rate of 30-60sccm, the chamber reaction pressure is 1.8-3.6mTorr, the target input power is set to 2000-8000W, and the sputtering time is 60-120s.

7. The method for controlling the deposition direction of magnetron sputtering atoms according to claim 4, characterized in that: The parameters of working condition B are: the substrate temperature is set to 300-400℃, the chamber vacuum is maintained at 5.0×10 -8 Torr, introduce argon gas at a flow rate of 30-60sccm, the chamber reaction pressure is 1.8-3.6mTorr, the target input power is set to 10000-20000W, and the sputtering time is 120-180s.

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