Reaction chamber apparatus and processing method

By adopting a multi-duct structure and independent container design in the tubular ALD equipment, the problem of high equipment maintenance frequency is solved, and long-term stable operation of the equipment and efficient production of thin film deposition are achieved.

CN120060824BActive Publication Date: 2025-10-21NA SHE ZHI NENG ZHUANG BEI (JIANG SU) YOU XIAN GONG SI
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Patent Information

Application Number
CN202510138932.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-02-08
Publication Date
2025-10-21
Estimated Expiration
2045-02-08

AI Technical Summary

Technical Problem

Existing tubular ALD equipment has a high maintenance frequency, short maintenance cycle and high maintenance cost, mainly due to the contact reaction of precursors in the inlet and outlet ducts to generate powder, which causes blockage.

Method used

A multi-duct structure is used to import and export different reactants, ensuring that the reactants do not touch each other in the ducts to avoid powder generation. Independent containers and heating structures are designed to maintain the sealing and vacuum environment of the reaction chamber.

Benefits of technology

It reduces the frequency of equipment maintenance, extends the maintenance cycle, reduces maintenance costs, and improves the quality and efficiency of thin film deposition.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present application relates to the technical field of atomic deposition, and particularly relates to a reaction chamber device and a processing method. The reaction chamber device comprises a first container and a conduit assembly. The first container defines a first cavity, and the first cavity is suitable for accommodating a workpiece. The conduit assembly is connected to the first container, and the conduit assembly comprises a first conduit, a second conduit, a third conduit and a fourth conduit which are respectively connected to the first cavity. The first conduit is suitable for introducing a first reactant into the first cavity. The second conduit is configured to guide the first reactant which is not attached to the surface of the workpiece out of the first cavity when the first reactant is introduced into the first cavity. The third conduit is suitable for introducing a second reactant into the first cavity. The fourth conduit is configured to guide the second reactant which does not react with the first reactant out of the first cavity when the second reactant is introduced into the first cavity. The processing method comprises producing the workpiece by using the reaction chamber device. The maintenance cost of the reaction chamber device is low.
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Description

Technical Field

[0001] The present invention relates to the technical field of atomic deposition, and in particular to a reaction chamber device and a processing method. Background Art

[0002] Tubular ALD equipment exposes a carrier (aluminum boat) to different precursors over time, causing the surface of the workpiece to alternately adsorb layers of (two) precursor atoms, generating a chemical reaction to form the desired thin film. In traditional photovoltaics, the deposited thin film is typically Al2O3. The precursors are typically liquid Al(CH3)3 and H2O (pure water), carried into the reaction chamber via PN2 (high-purity nitrogen) bubbling.

[0003] In current tubular ALD equipment, two different precursors are usually transported into the reaction chamber in sequence by the same air inlet duct, and the two different precursors that have not reacted in the reaction chamber are sequentially discharged from the reaction chamber by the same air outlet duct. In short, the current tubular ALD equipment only has one common air inlet duct and air outlet duct. In the above structure, it is easy for precursors to remain in both the air inlet duct and the air outlet duct. If the two precursors in the air inlet duct or the air outlet duct come into contact and react, powder will be generated in the air inlet duct or the air outlet duct. As the number of processes increases, the accumulation of powder in the air inlet duct or the air outlet duct becomes more serious, causing the air inlet duct or the air outlet duct to be easily blocked, resulting in a high maintenance frequency, short maintenance cycle and high maintenance cost for the tubular ALD equipment. Summary of the Invention

[0004] The main purpose of the present invention is to provide a reaction chamber device and processing method, aiming to solve the technical problems of high maintenance frequency, short maintenance cycle and high maintenance cost of current tubular ALD equipment.

[0005] To achieve the above objectives, the present invention provides a reaction chamber device, comprising:

[0006] a first container, wherein the first container defines a first cavity, and the first cavity is suitable for accommodating a workpiece to be processed;

[0007] a conduit assembly connected to the first container, the conduit assembly comprising a first conduit, a second conduit, a third conduit, and a fourth conduit respectively communicating with the first cavity;

[0008] The first conduit is adapted to introduce a first reactant into the first cavity, the first reactant being capable of adhering to the surface of the workpiece to be processed; the second conduit is configured to, when the first reactant is introduced into the first cavity, guide the first reactant that is not adhering to the surface of the workpiece to be processed out of the first cavity; the third conduit is adapted to introduce a second reactant into the first cavity, the second reactant being capable of adhering to the surface of the workpiece to be processed and reacting with the first reactant to form a thin film on the surface of the workpiece to be processed; and the fourth conduit is configured to, when the second reactant is introduced into the first cavity, guide the second reactant that is not reacted with the first reactant out of the first cavity.

[0009] In some embodiments, the reaction chamber device includes a second container, the second container defines a second cavity, and the first container is disposed in the second cavity;

[0010] Wherein, a heating element is provided in the second cavity, and the heating element is used to heat the first container.

[0011] In some embodiments, a first flow plate, a second flow plate, a third flow plate, and a fourth flow plate are provided in the first cavity around the circumference of the workpiece to be processed;

[0012] The first flow equalizer plate includes a first guide hole and a first air outlet, the first guide hole is connected to the first conduit, and the first air outlet is facing the workpiece to be processed; the second flow equalizer plate includes a second guide hole and a second air outlet, the second guide hole is connected to the second conduit, and the second air outlet is facing the workpiece to be processed; the third flow equalizer plate includes a third guide hole and a third air outlet, the third guide hole is connected to the third conduit, and the third air outlet is facing the workpiece to be processed; the fourth flow equalizer plate includes a fourth guide hole and a fourth air outlet, the fourth guide hole is connected to the fourth conduit, and the fourth air outlet is facing the workpiece to be processed.

[0013] In some embodiments, a fixing bracket is provided in the first cavity, the fixing bracket being adapted to fix the workpiece to be processed, and along the length direction of the fixing bracket, the first flow equalizer plate, the second flow equalizer plate, the third flow equalizer plate, and the fourth flow equalizer plate all extend from one end of the fixing bracket to the other end opposite to the fixing bracket;

[0014] And / or, along the width direction of the fixing bracket, the first flow distributor, the second flow distributor, the third flow distributor and the fourth flow distributor all extend from one end of the fixing bracket to the other end opposite to the fixing bracket.

[0015] In some embodiments, the first flow equalizer plate is connected to a first driving rod, and the first driving rod is configured to drive the first flow equalizer plate to move toward or away from the workpiece to be processed; the second flow equalizer plate is connected to a second driving rod, and the second driving rod is configured to drive the second flow equalizer plate to move toward or away from the workpiece to be processed; the third flow equalizer plate is connected to a third driving rod, and the third driving rod is configured to drive the third flow equalizer plate to move toward or away from the workpiece to be processed;

[0016] Wherein, the fixing bracket is arranged on the fourth flow equalizer plate.

[0017] In some embodiments, along a first direction, the first conduit and the second conduit are disposed opposite to each other;

[0018] The third conduit and the fourth conduit are arranged opposite to each other along a second direction perpendicular to the first direction.

[0019] In some embodiments, the first container has a first opening, the first opening is connected to the first cavity, the second container has a second opening, the second opening is connected to the second cavity, and the second opening and the first opening are arranged in the same direction;

[0020] The reaction chamber device includes a sealing portion, which is provided on a side close to the first opening and the second opening, and is configured to be movable toward or away from the first opening and the second opening so as to have a sealed state and an open state;

[0021] In the sealed state, the sealing portion seals the first opening and the second opening, and in the open state, the sealing portion opens the first opening and the second opening.

[0022] In some embodiments, the sealing portion comprises:

[0023] a sealing plate, the sealing plate being used to seal the second opening, the sealing plate being provided with a sealing ventilation block, the sealing ventilation block being suitable for introducing the first reactant or the second reactant, and the sealing ventilation block being provided with a ventilation pipe extending toward a side close to the second opening;

[0024] a spray plate, the spray plate being arranged on a side of the sealing plate close to the second opening, the spray plate being used to seal the first opening, the spray plate having an insertion port and a spray port, the insertion port being used to plug into the ventilation pipe, and the spray port facing the workpiece to be processed;

[0025] Wherein, the first conduit is connected to the sealed ventilation block and is used to introduce the first reactant into the sealed ventilation block;

[0026] Alternatively, the third conduit is connected to the sealed ventilation block and is used to introduce the second reactant into the sealed ventilation block.

[0027] In some embodiments, an elastic portion is provided between the sealing plate and the shower plate.

[0028] In some embodiments, the first container is provided with a flange portion at the first opening, the flange portion extending along the circumference of the first container in a direction away from the first container, and the second container is provided with a groove at the second opening;

[0029] The flange portion is adapted to the groove to achieve a sealed connection between the first container and the second container.

[0030] Correspondingly, the present invention also proposes another reaction chamber device, comprising:

[0031] a first container, wherein the first container defines a first cavity, and the first cavity is suitable for accommodating a workpiece to be processed;

[0032] a conduit assembly connected to the first container, the conduit assembly comprising a first conduit, a second conduit, and a third conduit respectively communicating with the first cavity;

[0033] The first conduit is adapted to sequentially introduce a first reactant and a second reactant into the first cavity, wherein the first reactant and the second reactant can react with the surface of the workpiece to be processed to form a thin film on the surface of the workpiece to be processed. The second conduit is configured to, when the first reactant is introduced into the first cavity, guide the first reactant that is not attached to the surface of the workpiece to be processed out of the first cavity. The third conduit is configured to, when the second reactant is introduced into the first cavity, guide the second reactant that has not reacted with the first reactant out of the first cavity.

[0034] Correspondingly, the present invention also proposes a processing method, which utilizes the reaction chamber device described in any of the above embodiments to produce a workpiece to be processed;

[0035] The processing method comprises:

[0036] placing the workpiece to be processed in the first cavity;

[0037] introducing a first reactant into a first cavity from a first position of a first container so that the first reactant adheres to the surface of the workpiece to be processed, and guiding the first reactant not adhering to the surface of the workpiece to be processed out of the first cavity from a third position of the first container while the first reactant is introduced into the first cavity;

[0038] A second reactant is introduced into the first cavity from the first position or the second position of the first container so that the second reactant reacts with the first reactant attached to the surface of the workpiece to be processed and forms a thin film on the surface of the workpiece to be processed. When the second reactant is introduced into the first cavity, the second reactant that has not reacted with the first reactant is discharged out of the first cavity from the fourth position of the first container.

[0039] In some embodiments, the first reactant is introduced into the first cavity, and after the first reactant adheres to the surface of the workpiece, an inert gas is introduced into the first cavity;

[0040] Furthermore, the second reactant is introduced into the first cavity, and after a thin film is formed on the surface of the workpiece, the inert gas is introduced into the first cavity.

[0041] Compared with the prior art, the present invention has the following beneficial effects:

[0042] In the technical solution of the present invention, when processing a workpiece to be processed using the reaction chamber device provided by the present invention (specifically, a thin film deposition process for a silicon wafer), first, the workpiece to be processed is placed in a first cavity and secured thereto to prevent the introduced airflow from blowing the workpiece off when the first reactant or the second reactant is introduced into the first cavity, thereby affecting the processing quality of the workpiece to be processed. Secondly, the first reactant is introduced into the first cavity via a first conduit, so that the first reactant sweeps the workpiece to be processed and adheres to the surface of the workpiece to be processed. At the same time, air is evacuated from the second conduit to the outside, so that the first reactant in the first cavity that is not attached to the surface of the workpiece to be processed can be promptly discharged, thereby achieving a circulating flow of the first reactant within the first cavity. Next, the introduction and removal of the first reactant is stopped, and the second reactant is introduced into the first chamber via the third conduit, allowing the second reactant to sweep the workpiece. At this point, the second reactant reacts with the first reactant attached to the surface of the workpiece, forming a thin film on the surface of the workpiece. Simultaneously, air is pumped outward via the fourth conduit, allowing any second reactant in the first chamber that has not reacted with the first reactant to be promptly removed, thereby achieving a circulating flow of the second reactant within the first chamber. Finally, the introduction and removal of the first and second reactants into the first chamber are repeated multiple times to ensure that a dense film is formed on the surface of the workpiece.

[0043] In the present invention, the first conduit and the second conduit only transport the first reactant into the first cavity, and the third conduit and the fourth conduit only transport the second reactant into the first cavity. Compared with transporting the first reactant and the second reactant into the first cavity in sequence through the same conduit, the first reactant and the second reactant in the present invention have different transport paths, thereby effectively preventing the first reactant and the second reactant remaining in the conduit from contacting and reacting to generate powder in the conduit, ensuring that the conduit will not be blocked by accumulated powder, thereby reducing the maintenance frequency of the equipment, shortening the maintenance cycle of the equipment, and reducing the maintenance cost of the equipment.

[0044] When the above-mentioned reaction chamber device is used to produce a workpiece to be processed, the first reactant and the second reactant are respectively introduced into the first cavity from different positions of the first container through the delivery conduit, and are discharged from the first cavity from different positions of the first container through the delivery conduit, thereby preventing the first reactant and the second reactant from reacting to generate powder after contact in the delivery conduit, avoiding the accumulation of powder causing blockage of the delivery conduit, and helping to reduce the maintenance cost of the reaction chamber device. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0046] Figure 1 A schematic diagram of the overall structure of a reaction chamber device provided in one embodiment of the present invention;

[0047] Figure 2 A cross-sectional view of the overall structure of a reaction chamber device provided by one embodiment of the present invention at a first viewing angle;

[0048] Figure 3 A cross-sectional view of the overall structure of a reaction chamber device provided by one embodiment of the present invention at a second viewing angle;

[0049] Figure 4 A cross-sectional view of the overall structure of a reaction chamber device provided by one embodiment of the present invention at a third viewing angle;

[0050] Figure 5 An exploded view of the overall structure of a reaction chamber device provided in one embodiment of the present invention;

[0051] Figure 6 A schematic structural diagram of a sealing portion in a reaction chamber device provided in one embodiment of the present invention;

[0052] Figure 7A schematic flow chart of a processing method provided in one embodiment of the present invention.

[0053] Description of Figure Numbers:

[0054] 10. Reaction chamber device;

[0055] 100. a first container;

[0056] 110, first cavity; 120, first opening; 130, flange portion;

[0057] 200, second container;

[0058] 210, second cavity; 220, second opening; 230, groove;

[0059] 300, catheter assembly;

[0060] 310, first conduit; 320, second conduit; 330, third conduit; 340, fourth conduit;

[0061] 400, first flow plate;

[0062] 410, first driving rod;

[0063] 500, second flow plate;

[0064] 510, second driving rod;

[0065] 600, third flow plate;

[0066] 610, third driving rod;

[0067] 700, fourth flow plate;

[0068] 800, fixed bracket;

[0069] 900, sealing part;

[0070] 910, sealing plate; 920, spray plate; 930, elastic part;

[0071] 911. Sealed ventilation block; 912. Ventilation pipe;

[0072] 1000, parts to be processed;

[0073] X, first direction;

[0074] Y, second direction.

[0075] The purpose, features and advantages of the present invention will be further described with reference to the accompanying drawings and in conjunction with the embodiments. DETAILED DESCRIPTION

[0076] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0077] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture. If the specific posture changes, the directional indications will also change accordingly.

[0078] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or suggesting their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features limited to "first" and "second" may explicitly or implicitly include at least one of such features. In addition, if "and / or", "and / or" or "and / or" appear in the full text, its meaning includes three parallel schemes. Taking "A and / or B" as an example, it includes scheme A, or scheme B, or a scheme in which A and B are satisfied at the same time. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement it. When the combination of technical solutions is mutually contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0079] Tubular ALD equipment exposes a carrier (aluminum boat) to different precursors over time, causing the surface of the workpiece to alternately adsorb layers of (two) precursor atoms, generating a chemical reaction to form the desired thin film. In traditional photovoltaics, the deposited thin film is typically Al2O3. The precursors are typically liquid Al(CH3)3 and H2O (pure water), carried into the reaction chamber via PN2 (high-purity nitrogen) bubbling.

[0080] In current tubular ALD equipment, two different precursors are usually transported into the reaction chamber in sequence by the same air inlet duct, and the two different precursors that have not reacted in the reaction chamber are sequentially discharged from the reaction chamber by the same air outlet duct. In short, the current tubular ALD equipment only has one common air inlet duct and air outlet duct. In the above structure, it is easy for precursors to remain in both the air inlet duct and the air outlet duct. If the two precursors in the air inlet duct or the air outlet duct come into contact and react, powder will be generated in the air inlet duct or the air outlet duct. As the number of processes increases, the accumulation of powder in the air inlet duct or the air outlet duct becomes more serious, causing the air inlet duct or the air outlet duct to be easily blocked, resulting in a high maintenance frequency, short maintenance cycle and high maintenance cost for the tubular ALD equipment.

[0081] Based on this, in order to solve the technical problems of high maintenance frequency, short maintenance cycle and high maintenance cost of current tubular ALD equipment, Figures 1 to 5 One embodiment of the present invention provides a reaction chamber device 10, which includes a first container 100 and a conduit assembly 300. The first container 100 defines a first cavity 110, which is suitable for accommodating a workpiece 1000 to be processed, which may be a silicon wafer. The first cavity 110 can accommodate multiple workpieces 1000 to be processed, and the multiple workpieces 1000 to be processed can be stacked in the first cavity 110. The conduit assembly 300 is connected to the first container 100 and includes a first conduit 310, a second conduit 320, a third conduit 330, and a fourth conduit 340, which are respectively connected to the first cavity 110. The first conduit 310 is suitable for introducing a first reactant (for example, the first reactant may be PN2 carrying liquid Al(CH3)3) into the first cavity 110, and the first reactant can adhere to the surface of the workpiece 1000 to be processed. The second conduit 320 is configured to, when the first reactant is introduced into the first cavity 110, guide the first reactant that has not adhered to the surface of the workpiece 1000 out of the first cavity 110. The third conduit 330 is adapted to introduce a second reactant (for example, the second reactant may be PN2 carrying H2O) into the first cavity 110. The second reactant can adhere to the surface of the workpiece 1000 and react with the first reactant to form a thin film on the surface of the workpiece 1000. The fourth conduit 340 is configured to, when the second reactant is introduced into the first cavity 110, guide the second reactant that has not reacted with the first reactant out of the first cavity 110.

[0082] Preferably, valves are provided on the first conduit 310, the second conduit 320, the third conduit 330, and the fourth conduit 340. When the first reactant is introduced into the first cavity 110 via the first conduit 310 and discharged from the first cavity 110 via the second conduit 320, the valves on the first conduit 310 and the second conduit 320 can be opened, while the valves on the third conduit 330 and the fourth conduit 340 can be closed, thereby ensuring that the first reactant is transported only by the first conduit 310 and the second conduit 320 and does not escape into the third conduit 330 and the fourth conduit 340. When the second reactant is introduced into the first chamber 110 through the third conduit 330 and discharged from the first chamber 110 through the fourth conduit 340, the valves of the first conduit 310 and the second conduit 320 can be closed, while the valves of the third conduit 330 and the fourth conduit 340 can be opened, ensuring that the second reactant is transported only by the third conduit 330 and the fourth conduit 340 and does not escape into the first conduit 310 and the second conduit 320.

[0083] Specifically, in this embodiment, when processing a workpiece 1000 using the reaction chamber apparatus 10 provided in this embodiment (specifically, a thin film deposition process on a silicon wafer), first, the workpiece 1000 is placed in the first chamber 110 and secured thereto to prevent the airflow from blowing the workpiece 1000 away when the first reactant or the second reactant is introduced into the first chamber 110, thereby affecting the processing quality of the workpiece 1000. Next, the first reactant is introduced into the first chamber 110 via the first conduit 310, so that the first reactant sweeps the workpiece 1000 and adheres to the surface of the workpiece 1000. Simultaneously, air is evacuated from the second conduit 320, so that any first reactant in the first chamber 110 that is not attached to the surface of the workpiece 1000 can be promptly discharged, thereby achieving a circulating flow of the first reactant within the first chamber 110. Next, the introduction and removal of the first reactant is stopped, and the second reactant is introduced into the first chamber 110 via the third conduit 330, allowing the second reactant to sweep across the workpiece 1000. At this point, the second reactant reacts with the first reactant attached to the surface of the workpiece 1000, forming a thin film on the surface of the workpiece 1000. Simultaneously, air is evacuated from the fourth conduit 340, allowing any second reactant in the first chamber 110 that has not reacted with the first reactant to be promptly removed, thereby achieving a circulating flow of the second reactant within the first chamber 110. Finally, the introduction and removal of the first and second reactants into the first chamber 110 are repeated multiple times to ensure that a dense film is formed on the surface of the workpiece 1000.

[0084] In this embodiment, the first conduit 310 and the second conduit 320 only transport the first reactant into the first cavity 110, and the third conduit 330 and the fourth conduit 340 only transport the second reactant into the first cavity 110. Compared with transporting the first reactant and the second reactant into the first cavity 110 in sequence through the same conduit, the first reactant and the second reactant in this embodiment have different transport paths, thereby effectively preventing the first reactant and the second reactant remaining in the conduit from contacting and reacting to generate powder in the conduit, ensuring that the conduit will not be blocked by accumulated powder, thereby reducing the maintenance frequency of the equipment, shortening the maintenance cycle of the equipment, and reducing the maintenance cost of the equipment.

[0085] In some embodiments, reference Figures 1 to 5 The reaction chamber device 10 includes a second container 200, which defines a second cavity 210. The first container 100 is disposed within the second cavity 210. The first container 100 and the second container 200 maintain a relatively sealed state to prevent the first and second reactants in the first cavity 110 from flowing into the second cavity 210, where they would react to form powder and increase the maintenance difficulty of the reaction chamber device 10. A heating element is disposed within the second cavity 210 to heat the first container 100.

[0086] Specifically, in this embodiment, in order to ensure the processing quality and processing accuracy of the workpiece 1000 and prevent the formation of impurities on the surface of the workpiece 1000, it is necessary to process the workpiece 1000 in a vacuum environment. Before introducing the first reactant and the second reactant into the first cavity 110, it is necessary to first evacuate the first cavity 110 and the second cavity 210. For example, the second cavity 210 may be connected to a vacuum tube, and the first cavity 110 can be evacuated using the first conduit 310, the second conduit 320, the third conduit 330, or the fourth conduit 340, and the second cavity 210 can be evacuated using the vacuum tube. After the first cavity 110 and the second cavity 210 are evacuated, due to the pressure difference between the first cavity 110, the second cavity 210 and the outside atmosphere, in order to avoid deformation of the first container 100 and the second container 200 and at the same time ensure the heating effect of the heating element on the second container 200, the wall thickness of the second container 200 can be thickened so that the second container 200 can withstand the atmospheric pressure, and the wall thickness of the first container 100 can be thinned so that the heat of the heating element can be more easily transferred to the first cavity 110, thereby ensuring the processing efficiency of the workpiece 1000 to be processed in the first cavity 110.

[0087] In some embodiments, reference Figures 1 to 5A first flow equalizer plate 400, a second flow equalizer plate 500, a third flow equalizer plate 600, and a fourth flow equalizer plate 700 are disposed in the first cavity 110 around the circumference of the workpiece 1000 to be processed (specifically, in the four directions of the top, bottom, left, and right of the workpiece 1000 to be processed). (For example, the first flow equalizer plate 400 can be disposed above the workpiece 1000 to be processed, the second flow equalizer plate 500 can be disposed below the workpiece 1000 to be processed, the third flow equalizer plate 600 can be disposed to the left of the workpiece 1000 to be processed, and the fourth flow equalizer plate 700 can be disposed to the right of the workpiece 1000 to be processed). The first flow equalizer plate 400 includes a first guide hole and a first air outlet. The first guide hole is connected to the first conduit 310, and the first air outlet faces the workpiece 1000. The second flow equalizer plate 500 includes a second guide hole and a second air outlet. The second guide hole is connected to the second conduit 320, and the second air outlet faces the workpiece 1000. The third flow plate 600 includes a third flow guide hole and a third air outlet, the third flow guide hole is connected to the third conduit 330, and the third air outlet faces the workpiece 1000. The fourth flow plate 700 includes a fourth flow guide hole and a fourth air outlet, the fourth flow guide hole is connected to the fourth conduit 340, and the fourth air outlet faces the workpiece 1000.

[0088] Specifically, in this embodiment, the first reactant in the first conduit 310 can be transported to the first flow uniformity plate 400 through the first guide hole, and diffused to the workpiece to be processed 1000 through the first air outlet. After the first reactant purges the workpiece to be processed 1000 (during the purge process, the first reactant will adhere to the surface of the workpiece to be processed 1000), it can be sucked to the second air outlet and flow from the second air outlet to the second flow uniformity plate 500, and finally flow into the second conduit 320 through the second guide hole. The first reactant is guided out of the first cavity 110 through the second conduit 320, thereby realizing the circulation of the first reactant in the first cavity 110. Similarly, the second reactant in the third duct 330 can be transported to the third flow uniform plate 600 through the third guide hole and diffused toward the workpiece 1000 to be processed through the third air outlet. After the second reactant purges the workpiece 1000 (during the purge process, the second reactant will react with the first reactant attached to the surface of the workpiece 1000 to be processed, thereby forming a thin film on the surface of the workpiece 1000), it can be sucked to the fourth air outlet and flow from the fourth air outlet to the fourth flow uniform plate 700, and finally flow into the fourth duct 340 through the fourth guide hole. The second reactant is guided out of the first cavity 110 through the fourth duct 340, thereby realizing the circulation of the second reactant in the first cavity 110.

[0089] In this embodiment, the first flow plate 400, the second flow plate 500, the third flow plate 600, and the fourth flow plate 700 ensure that the first reactant and the second reactant can be evenly diffused within the first cavity 110, so that the first reactant and the second reactant evenly sweep the workpiece 1000 to be processed, preventing the first reactant and the second reactant from being concentrated in a certain position within the first cavity 110. Since a plurality of stacked workpieces 1000 to be processed are disposed within the first cavity 110, the above-described structure can ensure that the first reactant and the second reactant are effectively attached to the surface of each workpiece 1000 to be processed, thereby ensuring the efficiency and quality of thin film deposition on the surface of each workpiece 1000 to be processed.

[0090] In some embodiments, reference Figures 2 to 5 A fixing bracket 800 is provided in the first cavity 110, and the fixing bracket 800 is suitable for fixing the workpiece 1000 to be processed. For example, if the workpiece 1000 to be processed is a silicon wafer, the fixing bracket 800 can be an aluminum boat, and multiple silicon wafers can be stacked vertically on the aluminum boat. Along the length direction of the fixing bracket 800, the first flow plate 400, the second flow plate 500, the third flow plate 600 and the fourth flow plate 700 all extend from one end of the fixing bracket 800 to the other end opposite to the fixing bracket 800. And / or, along the width direction of the fixing bracket 800, the first flow plate 400, the second flow plate 500, the third flow plate 600 and the fourth flow plate 700 all extend from one end of the fixing bracket 800 to the other end opposite to the fixing bracket 800.

[0091] Specifically, in this embodiment, the length and width dimensions of the first flow plate 400, the second flow plate 500, the third flow plate 600 and the fourth flow plate 700 correspond to the length and width dimensions of the fixed bracket 800, ensuring that the first flow plate 400, the second flow plate 500, the third flow plate 600 and the fourth flow plate 700 can completely cover the fixed bracket 800, so that the multiple workpieces 1000 stacked on the fixed bracket 800 can fully contact the first reactant and the second reactant, thereby improving the efficiency and effect of thin film deposition on the surface of the workpieces 1000 to be processed.

[0092] In some embodiments, reference Figure 4The first flow equalizer plate 400 is connected to the first drive rod 410, and the first drive rod 410 is configured to drive the first flow equalizer plate 400 to move toward or away from the workpiece 1000 to be processed. The second flow equalizer plate 500 is connected to the second drive rod 510, and the second drive rod 510 is configured to drive the second flow equalizer plate 500 to move toward or away from the workpiece 1000 to be processed. The third flow equalizer plate 600 is connected to the third drive rod 610, and the third drive rod 610 is configured to drive the third flow equalizer plate 600 to move toward or away from the workpiece 1000 to be processed. The first drive rod 410, the second drive rod 510, and the third drive rod 610 can be driven by a drive motor or a drive cylinder. Among them, the fixing bracket 800 is provided on the fourth flow equalizer plate 700.

[0093] Specifically, in this embodiment, when machining a workpiece 1000, the first drive rod 410 drives the first flow plate 400 toward the workpiece 1000 to shorten the distance between the first flow plate 400 and the workpiece 1000. Simultaneously, the second drive rod 510 drives the second flow plate 500 toward the workpiece 1000 to shorten the distance between the second flow plate 500 and the workpiece 1000. Simultaneously, the third drive rod 610 drives the third flow plate 600 toward the workpiece 1000 to shorten the distance between the third flow plate 600 and the workpiece 1000. Furthermore, because the fourth flow plate 700 supports the fixing bracket 800, which is used to secure the workpiece 1000, the distance between the fourth flow plate 700 and the workpiece 1000 is relatively short, eliminating the need to adjust the position of the fourth flow plate 700. At the same time, keeping the fourth flow plate 700 relatively fixed can ensure the placement stability of the fixed bracket 800 and prevent the fixed bracket 800 from being moved to cause the workpiece 1000 to shift, ultimately affecting the processing quality of the workpiece 1000.

[0094] Placing the first flow plate 400, the second flow plate 500, the third flow plate 600, and the fourth flow plate 700 close to the workpiece 1000 can ensure that the vast majority of the first reactant and the second reactant flow directly to the fixed bracket 800, allowing the first reactant, the second reactant, and the surface of the workpiece 1000 to fully contact and react, thereby improving the utilization rate of the first reactant and the second reactant, and improving the efficiency and quality of the thin film formed on the surface of the workpiece 1000. At the same time, placing the first flow plate 400, the second flow plate 500, the third flow plate 600, and the fourth flow plate 700 close to the workpiece 1000 can effectively prevent the first reactant and the second reactant from diffusing throughout the first cavity 110, preventing the formation of reaction powder on the inner wall of the first container 100, thereby reducing the frequency of cleaning and maintenance of the first container 100 and reducing the cost of cleaning and maintenance of the first container 100.

[0095] After the workpiece 1000 is coated, the first drive rod 410 drives the first flow plate 400 to move away from the workpiece 1000 to increase the distance between the first flow plate 400 and the workpiece 1000. Simultaneously, the second drive rod 510 drives the second flow plate 500 to move away from the workpiece 1000 to increase the distance between the second flow plate 500 and the workpiece 1000. Simultaneously, the third drive rod 610 drives the third flow plate 600 to move away from the workpiece 1000 to increase the distance between the third flow plate 600 and the workpiece 1000. The above operations facilitate the removal of the fixed bracket 800 from the first cavity 110, ensuring that the fixed bracket 800 does not interfere with the first flow plate 400, the second flow plate 500, and the third flow plate 600 when it is moved.

[0096] With reference to the above embodiment, since the reaction chamber device 10 includes a first container 100 and a second container 200, and the first drive rod 410, the second drive rod 510, and the third drive rod 610 need to pass through the second container 200 and extend into the first container 100, to ensure that the first container 100 and the second container 200 are in a relatively sealed state, a sealing bellows can be provided between the first container 100 and the second container 200, forming an independent sealed channel within the sealing bellows. The first drive rod 410, the second drive rod 510, and the third drive rod 610 can first be provided within the sealing bellows and then extend into the first chamber 110.

[0097] In some embodiments, reference Figures 1 to 5 Along a first direction X, the first conduit 310 and the second conduit 320 are arranged opposite each other. Along a second direction Y perpendicular to the first direction X, the third conduit 330 and the fourth conduit 340 are arranged opposite each other. That is, the flow path of the first reactant and the flow path of the second reactant are arranged to intersect. For example, if the first direction X is the length of the first container 100, the second direction Y can be the width or height of the first container 100 to ensure that the first reactant and the second reactant can flow into the first cavity 110 from different directions.

[0098] Specifically, in this embodiment, the first conduit 310 and the second conduit 320 are arranged relative to each other, thereby extending the flow path of the first reactant within the first cavity 110, ensuring that the first reactant can fully contact and react with the workpiece 1000. Similarly, the third conduit 330 and the fourth conduit 340 are arranged relative to each other, thereby extending the flow path of the second reactant within the first cavity 110, ensuring that the second reactant can fully contact and react with the workpiece 1000, thereby facilitating improved processing quality and efficiency in ultimately forming a thin film on the surface of the workpiece 1000.

[0099] The flow path of the first reactant and the flow path of the second reactant are arranged in an intersecting manner, which can reduce direct contact between the first reactant and the second reactant and avoid the first reactant and the second reactant from generating a large amount of powder in the first cavity 110, thereby facilitating the cleanliness of the first cavity 110 and reducing the number of maintenance times for the first container 100.

[0100] In some embodiments, reference Figure 5 and Figure 6 The first container 100 has a first opening 120 that communicates with the first cavity 110. The second container 200 has a second opening 220 that communicates with the second cavity 210. The second opening 220 and the first opening 120 are arranged in the same direction. The reaction chamber device 10 includes a sealing portion 900. The sealing portion 900 is disposed near the first opening 120 and the second opening 220. The sealing portion 900 is configured to move toward or away from the first opening 120 and the second opening 220, so that the sealing portion 900 has a sealed state and an open state. In the sealed state, the sealing portion 900 seals the first opening 120 and the second opening 220. In the open state, the sealing portion 900 opens the first opening 120 and the second opening 220.

[0101] Specifically, in this embodiment, when the workpiece 1000 to be processed is placed into the first cavity 110, or when the workpiece 1000 to be processed is removed from the first cavity 110, the sealing portion 900 is driven to move in a direction away from the first opening 120 and the second opening 220, so that the first opening 120 and the second opening 220 are in an open state. At this time, the workpiece 1000 to be processed can be moved in or out through the first opening 120 and the second opening 220. When the workpiece 1000 to be processed is processed, the sealing portion 900 is driven to move in a direction close to the first opening 120 and the second opening 220, so that the first opening 120 and the second opening 220 are in a sealed state. At this time, the sealing of the first container 100 and the second container 200 can be ensured, the first reactant and the second reactant in the first container 100 cannot escape, and the second container 200 is kept in a vacuum state.

[0102] In some embodiments, the sealing portion 900 has at least two degrees of freedom. For example, the sealing portion 900 can move along the axial direction of the first container 100 (or the second container 200). At the same time, the sealing portion 900 can also move along the axial direction perpendicular to the first container 100 (or the second container 200) to ensure that the first opening 120 and the second opening 220 have a sufficiently large opening area to prevent the sealing portion 900 from interfering with the movement in or out of the workpiece 1000 to be processed.

[0103] In some embodiments, reference Figure 6 The sealing portion 900 includes a sealing plate 910 and a spray plate 920. The sealing plate 910 is used to seal the second opening 220. The sealing plate 910 is provided with a sealing ventilation block 911. The sealing ventilation block 911 is suitable for passing the first reactant or the second reactant. The sealing ventilation block 911 is extended to a side near the second opening 220 and is provided with a ventilation pipe 912. The ventilation pipe 912 is sealed and connected by a sealing ring and the sealing plate 910. The spray plate 920 is arranged on a side of the sealing plate 910 near the second opening 220. The spray plate 920 is used to seal the first opening 120. The spray plate 920 has an insert and a spray port. The insert is used to plug the ventilation pipe 912, and the spray port is towards the workpiece 1000 to be processed. Wherein, the first conduit 310 is connected to the sealing ventilation block 911 for passing the first reactant into the sealing ventilation block 911. Alternatively, the third conduit 330 is connected to the sealed vent block 911 and is used to introduce the second reactant into the sealed vent block 911 .

[0104] It should be noted that the function of the spray plate 920 is similar to that of the first flow plate 400, the second flow plate 500, the third flow plate 600 and the fourth flow plate 700 in the above embodiment, and can ensure that the first reactant or the second reactant is evenly diffused in the first cavity 110.

[0105] Specifically, in this embodiment, when the sealing portion 900 is in a sealed state, the sealing plate 910 of the sealing portion 900 can seal the second container 200, and the spray plate 920 of the sealing portion 900 can seal the first container 100, so that the first container 100 and the second container 200 are in a relatively sealed state. The spray plate 920 can be used to introduce the first reactant or the second reactant into the first cavity 110 along the axial direction of the first container 100 (or the second container 200). For example, when the first reactant is introduced into the first cavity 110 through the spray plate 920, the sealing vent block 911 can be connected to the first conduit 310. At this time, the first reactant in the first conduit 310 can flow into the sealing vent block 911. Through the ventilation pipe 912, the first reactant in the sealing vent block 911 can flow from the plug interface to the spray plate 920, and finally, the first reactant is introduced into the first cavity 110 through the spray port of the spray plate 920. The first reactant in the first cavity 110 can be discharged from the end of the first container 100 opposite to the shower plate 920 .

[0106] For another example, when a second reactant is introduced into the first cavity 110 through the spray plate 920, the sealed vent block 911 can be connected to the third conduit 330. The second reactant in the third conduit 330 can then flow into the sealed vent block 911. Through the ventilation pipe 912, the second reactant in the sealed vent block 911 can flow from the plug port into the spray plate 920, and ultimately be introduced into the first cavity 110 through the spray port of the spray plate 920. The second reactant in the first cavity 110 can be discharged from the end of the first container 100 opposite the spray plate 920.

[0107] In the above structure, the shower plate 920 can be used to seal the first container 100 and introduce the first reactant or the second reactant into the first cavity 110 , thereby simplifying the structural design of the reaction chamber device 10 .

[0108] In some embodiments, the first conduit 310 or the third conduit 330 connected to the sealing ventilation block 911 can be a bellows with telescopic elasticity. When the sealing part 900 moves toward or away from the first opening 120 and the second opening 220, the first conduit 310 or the third conduit 330 can be telescoped so as not to affect the movement of the sealing part 900.

[0109] In some embodiments, reference Figure 6 An elastic portion 930 is provided between the sealing plate 910 and the shower plate 920 .

[0110] Specifically, in this embodiment, the distance between the spray plate 920 and the sealing plate 910 can be greater than the distance from the outer end surface of the fixed bracket 800 to the first opening 120. When the spray plate 920 seals the first opening 120, it will be subjected to the squeezing force of the fixed bracket 800. At this time, the spray plate 920 has a tendency to move toward the direction close to the sealing plate 910. Under the action of the elastic part 930, the spray plate 920 will be tightly attached to the fixed bracket 800, thereby effectively shortening the spacing distance between the spray plate 920 and the workpiece to be processed 1000 on the fixed bracket 800, thereby improving the contact reaction effect between the first reactant or the second reactant and the workpiece to be processed 1000.

[0111] It should be noted that in the above embodiment, the ventilation duct 912 can be a flexible bellows to ensure dynamic adjustment of the spray plate 920. Alternatively, a small gap can be reserved between the ventilation duct 912 and the spray plate 920 to ensure that the spray plate 920 has room to move.

[0112] In some embodiments, reference Figure 5The first container 100 is provided with a flange portion 130 at the first opening 120. The flange portion 130 extends along the circumference of the first container 100 in a direction away from the first container 100. The second container 200 is provided with a groove 230 at the second opening 220. The flange portion 130 is adapted to fit into the groove 230 to achieve a sealed connection between the first container 100 and the second container 200.

[0113] Specifically, in this embodiment, through the cooperation between the flange portion 130 and the groove 230, a tight connection between the first container 100 and the second container 200 can be achieved, the connection gap between the first container 100 and the second container 200 is eliminated, and the relative sealing between the first container 100 and the second container 200 is ensured, thereby effectively preventing the first reactant or the second reactant in the first cavity 110 from escaping into the second cavity 210.

[0114] Correspondingly, another embodiment of the present invention further provides a reaction chamber device 10, which includes a first container 100 and a conduit assembly 300. The first container 100 defines a first cavity 110, which is suitable for accommodating a workpiece 1000 to be processed. The conduit assembly 300 is connected to the first container 100 and includes a first conduit 310, a second conduit 320, and a third conduit 330, which are respectively connected to the first cavity 110. The first conduit 310 is suitable for sequentially introducing a first reactant and a second reactant into the first cavity 110. The first reactant and the second reactant are capable of reacting with the surface of the workpiece 1000 to form a thin film on the surface of the workpiece 1000. The second conduit 320 is configured to guide the first reactant that is not attached to the surface of the workpiece 1000 to be processed out of the first cavity 110 when the first reactant is introduced into the first cavity 110. The third conduit 330 is configured to guide the second reactant that has not reacted with the first reactant out of the first cavity 110 when the second reactant is introduced into the first cavity 110 .

[0115] Specifically, unlike the reaction chamber device 10 provided in the first embodiment described above, the reaction chamber device 10 provided in this embodiment sequentially introduces the first reactant and the second reactant into the first chamber 110 through the same conduit (i.e., the first conduit 310), while extracting the first reactant and the second reactant from the first chamber 110 through different conduits (i.e., the second conduit 320 and the third conduit 330). Because the airflow within the intake conduit (i.e., the first conduit 310) is greater, the amount of powder produced by the reaction of the first reactant and the second reactant within the intake conduit (i.e., the first conduit 310) is smaller than that within the exhaust conduits (i.e., the second conduit 320 and the third conduit 330), meaning that the intake conduit (i.e., the first conduit 310) is less likely to become clogged. This structure simplifies the piping layout of the reaction chamber device 10.

[0116] Correspondingly, another embodiment of the present invention further provides a processing method, referring to Figure 7 The processing method uses the reaction chamber device 10 provided in the first embodiment or the reaction chamber device 10 provided in the second embodiment to produce a workpiece 1000. The processing method includes the following steps:

[0117] S100 : placing the workpiece 1000 to be processed in the first cavity 110 .

[0118] S200: A first reactant is introduced into the first cavity 110 from the first position of the first container 100 so that the first reactant adheres to the surface of the workpiece 1000 to be processed. When the first reactant is introduced into the first cavity 110, the first reactant that is not adhered to the surface of the workpiece 1000 to be processed is guided out of the first cavity 110 from the third position of the first container 100.

[0119] S300: A second reactant is introduced into the first cavity 110 from the first position or the second position of the first container 100, so that the second reactant reacts with the first reactant attached to the surface of the workpiece 1000 to form a thin film on the surface of the workpiece 1000. When the second reactant is introduced into the first cavity 110, the second reactant that has not reacted with the first reactant is discharged from the first cavity 110 from the fourth position of the first container 100.

[0120] S400: cyclically introducing the first reactant and the second reactant into the first container 100 for several times to ensure that a dense film is deposited on the surface of the workpiece 1000.

[0121] Specifically, in this embodiment, when the reaction chamber device 10 is used to produce the workpiece 1000 to be processed, the first reactant and the second reactant are respectively introduced into the first cavity 110 from different positions of the first container 100 through the delivery conduit, and are respectively discharged from the first cavity 110 from different positions of the first container 100 through the delivery conduit, thereby preventing the first reactant and the second reactant from reacting and generating powder after contact in the delivery conduit, avoiding the accumulation of powder causing the delivery conduit to be blocked, and helping to reduce the maintenance cost of the reaction chamber device 10.

[0122] In some embodiments, after a first reactant is introduced into the first chamber 110 and adheres to the surface of the workpiece 1000, an inert gas is introduced into the first chamber 110. Furthermore, after a second reactant is introduced into the first chamber 110 and a thin film is formed on the surface of the workpiece 1000, an inert gas is introduced into the first chamber 110. For example, the inert gas may be high-purity nitrogen.

[0123] Specifically, in this embodiment, after the first reactant fully contacts the workpiece 1000, the remaining first reactant in the first cavity 110 is completely purged using an inert gas. After the second reactant fully contacts the workpiece 1000, the remaining second reactant in the first cavity 110 is completely purged using an inert gas. By intermittently introducing the inert gas into the first cavity 110, the first reactant and the second reactant remaining in the first cavity 110 are effectively prevented from reacting upon contact and thereby generating a large amount of powder in the first cavity 110. This, in turn, helps reduce the frequency of cleaning and maintenance of the first container 100, extends the cleaning and maintenance cycle of the first container 100, and reduces the cost of cleaning and maintenance of the first container 100.

[0124] Thanks to the improvement of the above-mentioned reaction chamber device 10 , the processing method of this embodiment has the same technical effect as the above-mentioned reaction chamber device 10 , and will not be described in detail here.

[0125] It should be noted that other contents of the reaction chamber device 10 and the processing method disclosed in the present invention can be found in the prior art and will not be described in detail here.

[0126] The above are only preferred embodiments of the present invention and are not intended to limit the patent scope of the present invention. All equivalent structural transformations made using the contents of the present invention's description and drawings, or direct / indirect applications in other related technical fields, within the scope of the present invention are included in the patent protection scope of the present invention.

Claims

1. A reaction chamber device, characterized in that: include: a first container, wherein the first container defines a first cavity, and the first cavity is suitable for accommodating a workpiece to be processed; a conduit assembly connected to the first container, the conduit assembly comprising a first conduit, a second conduit, a third conduit, and a fourth conduit respectively communicating with the first cavity; wherein the first conduit is adapted to introduce a first reactant into the first cavity, the first reactant being capable of adhering to the surface of the workpiece to be processed; the second conduit is configured to, when the first reactant is introduced into the first cavity, guide the first reactant not adhering to the surface of the workpiece to be processed out of the first cavity; the third conduit is adapted to introduce a second reactant into the first cavity, the second reactant being capable of adhering to the surface of the workpiece to be processed and reacting with the first reactant to form a thin film on the surface of the workpiece to be processed; and the fourth conduit is configured to, when the second reactant is introduced into the first cavity, guide the second reactant not reacting with the first reactant out of the first cavity; A first flow equalizer plate, a second flow equalizer plate, a third flow equalizer plate, and a fourth flow equalizer plate are provided in the first cavity around the circumference of the workpiece to be processed; The first flow equalizer plate includes a first guide hole and a first air outlet, the first guide hole is connected to the first conduit, and the first air outlet faces the workpiece to be processed; the second flow equalizer plate includes a second guide hole and a second air outlet, the second guide hole is connected to the second conduit, and the second air outlet faces the workpiece to be processed; the third flow equalizer plate includes a third guide hole and a third air outlet, the third guide hole is connected to the third conduit, and the third air outlet faces the workpiece to be processed; the fourth flow equalizer plate includes a fourth guide hole and a fourth air outlet, the fourth guide hole is connected to the fourth conduit, and the fourth air outlet faces the workpiece to be processed; A fixed bracket is provided in the first cavity, the first flow equalizer plate is connected to a first driving rod, and the first driving rod is configured to drive the first flow equalizer plate to move toward or away from the workpiece to be processed; the second flow equalizer plate is connected to a second driving rod, and the second driving rod is configured to drive the second flow equalizer plate to move toward or away from the workpiece to be processed; the third flow equalizer plate is connected to a third driving rod, and the third driving rod is configured to drive the third flow equalizer plate to move toward or away from the workpiece to be processed; Wherein, the fixing bracket is arranged on the fourth flow equalizer plate.

2. The reaction chamber device according to claim 1, characterized in that: The reaction chamber device includes a second container, the second container defines a second cavity, and the first container is disposed in the second cavity; Wherein, a heating element is provided in the second cavity, and the heating element is used to heat the first container.

3. The reaction chamber device according to claim 2, characterized in that: The fixing bracket is suitable for fixing the workpiece to be processed, and along the length direction of the fixing bracket, the first flow plate, the second flow plate, the third flow plate, and the fourth flow plate all extend from one end of the fixing bracket to the other end opposite to the fixing bracket; And / or, along the width direction of the fixing bracket, the first flow distributor, the second flow distributor, the third flow distributor and the fourth flow distributor all extend from one end of the fixing bracket to the other end opposite to the fixing bracket.

4. The reaction chamber device according to claim 1, characterized in that: Along a first direction, the first conduit and the second conduit are arranged opposite to each other; The third conduit and the fourth conduit are arranged opposite to each other along a second direction perpendicular to the first direction.

5. The reaction chamber device according to claim 2, characterized in that: The first container has a first opening, the first opening is connected to the first cavity, the second container has a second opening, the second opening is connected to the second cavity, and the second opening and the first opening are arranged in the same direction; The reaction chamber device includes a sealing portion, which is provided on a side close to the first opening and the second opening, and is configured to be movable toward or away from the first opening and the second opening so as to have a sealed state and an open state; In the sealed state, the sealing portion seals the first opening and the second opening, and in the open state, the sealing portion opens the first opening and the second opening.

6. The reaction chamber device according to claim 5, characterized in that: The sealing portion includes: a sealing plate, the sealing plate being used to seal the second opening, the sealing plate being provided with a sealing ventilation block, the sealing ventilation block being suitable for introducing the first reactant or the second reactant, and the sealing ventilation block being provided with a ventilation pipe extending toward a side close to the second opening; a spray plate, the spray plate being arranged on a side of the sealing plate close to the second opening, the spray plate being used to seal the first opening, the spray plate having an insertion port and a spray port, the insertion port being used to plug into the ventilation pipe, and the spray port facing the workpiece to be processed; Wherein, the first conduit is connected to the sealed ventilation block and is used to introduce the first reactant into the sealed ventilation block; Alternatively, the third conduit is connected to the sealed ventilation block and is used to introduce the second reactant into the sealed ventilation block.

7. The reaction chamber device according to claim 6, characterized in that: An elastic portion is provided between the sealing plate and the spray plate.

8. The reaction chamber device according to claim 5, characterized in that: The first container is provided with a flange portion at the first opening, and the flange portion extends along the circumference of the first container in a direction away from the first container, and the second container is provided with a groove at the second opening; The flange portion is adapted to the groove to achieve a sealed connection between the first container and the second container.

9. A processing method, characterized in that: The processing method utilizes the reaction chamber device according to any one of claims 1 to 8 to produce a workpiece to be processed; The processing method comprises: placing the workpiece to be processed in the first cavity; introducing a first reactant into a first cavity from a first position of a first container so that the first reactant adheres to the surface of the workpiece to be processed, and guiding the first reactant not adhering to the surface of the workpiece to be processed out of the first cavity from a third position of the first container while the first reactant is introduced into the first cavity; introducing a second reactant into the first cavity from the first position or the second position of the first container so that the second reactant reacts with the first reactant attached to the surface of the workpiece to be processed and forms a thin film on the surface of the workpiece to be processed; while the second reactant is being introduced into the first cavity, the second reactant that has not reacted with the first reactant is discharged from the first cavity from the fourth position of the first container; When processing the workpiece to be processed, the first driving rod drives the first flow plate to move toward the direction close to the workpiece to be processed; at the same time, the second driving rod drives the second flow plate to move toward the direction close to the workpiece to be processed; at the same time, the third driving rod drives the third flow plate to move toward the direction close to the workpiece to be processed.

10. The processing method according to claim 9, characterized in that: Introducing the first reactant into the first cavity, and after the first reactant adheres to the surface of the workpiece, introducing an inert gas into the first cavity; Furthermore, the second reactant is introduced into the first cavity, and after a thin film is formed on the surface of the workpiece, the inert gas is introduced into the first cavity.

Citation Information

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