Support plate, method for manufacturing support plate, and substrate processing apparatus having support plate

Abstract

Disclosed are a support plate configured to enable ion flow during electroless plating or electrolytic plating to allow surface treatment on an internal flow path, a method of manufacturing the support plate, and a substrate processing apparatus having the support plate. The support plate includes an upper plate, a lower plate, and a stop member. The lower plate has a formed inner flow path, is disposed to face the upper plate, and has a plurality of perforations formed corresponding to each of inflection points of the inner flow path. The stopper member is inserted into the through hole in a state where the upper plate and the lower plate are engaged with each other. Thus, by forming separate perforations in a structure in which coating or plating of an internal flow path is impossible, the flow of ions during electroless plating or electrolytic plating is possible, and surface treatment is possible.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10 - 2023 - 0169479, filed with the Korean Intellectual Property Office (KIPO) on November 29, 2023, the content of which is incorporated herein by reference in its entirety. Technical Field

[0003] Exemplary embodiments of the present invention relate to a support plate, a method of manufacturing the support plate, and a substrate processing apparatus having the support plate. More specifically, exemplary embodiments of the present invention relate to a support plate, a method of manufacturing the support plate, and a substrate processing apparatus having the support plate, the support plate being configured to allow ions to flow during electroless plating or electroplating to permit surface treatment on an internal flow path. Background Art

[0004] Generally, semiconductor manufacturing processes involve forming circuits by repeatedly depositing, heating, and cooling photoresist on the upper surface of a wafer. Examples of semiconductor manufacturing processes are as follows. First, the upper surface of the wafer for manufacturing a circuit is fabricated through wafer cleaning and surface treatment. Subsequently, photoresist is coated on the upper surface of the wafer and heated to a temperature of 150 °C or lower to deposit the photoresist, and the photoresist is cooled to room temperature of about 23 °C. Subsequently, circuits are deposited through etching, diffusion, and development processes, and the circuits are formed by heating again to a high temperature of about 150 °C or higher. Subsequently, it undergoes an etching process, and a metal material is inserted.

[0005] In semiconductor manufacturing processes, photoresist can be deposited without changing characteristics to produce semiconductor devices with desired properties. Therefore, each process and the heating process are very important, and a cooling plate device is basically used for this purpose.

[0006] A cooling plate is formed by brazing a cover plate to a flow - path forming plate. Here, the flow - path forming plate generally has an internal flow - path groove that opens upward or downward, and the cover plate covers the flow - path forming plate to enclose the internal flow - path groove. Constant - temperature water flows in the internal flow - path groove, and thus, due to foreign substances or corrosive substances, fitting corrosion occurs on the surface of the internal flow path of aluminum. In addition, there is a problem of leakage defects occurring due to corrosion of cracks caused by the underlying aluminum and the process. Summary of the Invention

[0007] Exemplary embodiments of the present invention provide a support plate configured to allow ion flow during electroless plating or electroplating by forming separate penetration holes in a structure where it is impossible to coat or plate an inner flow path, to permit surface treatment on the inner flow path.

[0008] Exemplary embodiments of the present invention also provide a substrate processing apparatus equipped with the above-described support plate.

[0009] Exemplary embodiments of the present invention also provide a substrate processing apparatus equipped with the above-described support plate.

[0010] According to one aspect of the present invention, the support plate includes: an upper plate, a lower plate, and a stopper member. The lower plate has an inner flow path formed therein, is disposed to face the upper plate, and has a plurality of penetration holes formed corresponding to each of inflection points of the inner flow path. The stopper member is inserted into the penetration holes in a state where the upper plate and the lower plate are joined to each other.

[0011] In an exemplary embodiment of the present invention, a plating layer may be formed on an inner surface of the inner flow path.

[0012] In an exemplary embodiment of the present invention, the plating layer may include nickel-phosphorus (Ni-P).

[0013] In an exemplary embodiment of the present invention, a diameter of the penetration hole may be equal to or less than a width of the inner flow path.

[0014] In an exemplary embodiment of the present invention, the stopper member may be laser welded to the penetration hole.

[0015] In an exemplary embodiment of the present invention, the stopper member may be fused to the penetration hole by an ultrasonic welding method.

[0016] In an exemplary embodiment of the present invention, the stopper member may include a bolt.

[0017] According to another aspect of the present invention, a method of manufacturing a support plate is provided. In the method, each of the upper plate and the lower plate is processed separately. The lower plate has a lower groove and a plurality of penetration holes. The lower groove is formed on an upper surface to form an inner flow path, and the plurality of penetration holes are formed in regions corresponding to each of inflection points of the inner flow path among some regions of the lower groove. Then, a lower surface of the upper plate and an upper surface of the lower plate are brazed to form a support plate having an internal space. Then, a first surface treatment is performed on the internal space through the penetration holes. Then, the penetration holes are filled with the stopper member. Then, a second surface treatment is performed on an outer surface of the support plate filled with the stopper member.

[0018] In an exemplary embodiment of the present invention, an upper groove may be formed on the lower surface of the upper plate to correspond to the lower groove formed in the lower plate.

[0019] In an exemplary embodiment of the present invention, performing the first surface treatment may include Ni-P plating.

[0020] In an exemplary embodiment of the present invention, performing the second surface treatment may include anodization.

[0021] According to another aspect of the present invention, a method of manufacturing a support plate is provided. In this method, each of the upper plate and the lower plate is processed separately. The lower plate has a lower groove formed on the upper surface to form an internal flow path. Then, the lower surface of the upper plate and the upper surface of the lower plate are brazed to form a support plate having an internal space. Then, a plurality of through-holes are formed in a partial area corresponding to each of the inflection points of the internal flow path in the lower groove formed in the lower plate of the support plate. Then, the first surface treatment is performed on the internal space through the through-holes. Then, the through-holes are filled with a stopper member. Then, the second surface treatment is performed on the outer surface of the support plate in which the through-holes are filled with the stopper member.

[0022] In an exemplary embodiment of the present invention, an upper groove may be formed on the lower surface of the upper plate to correspond to the lower groove formed in the lower plate.

[0023] In an exemplary embodiment of the present invention, performing the first surface treatment may include Ni-P plating.

[0024] In an exemplary embodiment of the present invention, performing the second surface treatment may include anodization.

[0025] According to another aspect of the present invention, a substrate processing apparatus includes a transfer module, a processing module, and a plurality of buffer modules. The transfer module transfers the substrate from a container accommodating the substrate and receives the processed substrate back into the container. The processing module performs a coating process and a developing process on the substrate, receives the substrate accommodated in the container from the transfer module, and performs a substrate processing process. The buffer modules are partially disposed between the transfer module and the processing module. Each buffer module includes: a frame including a rectangular parallelepiped shape having an empty interior; and a buffer unit disposed inside the frame to temporarily store the substrate during the process of processing the substrate. The buffer unit includes: a housing having an empty space therein; a support plate on which the substrate is disposed; and a connection block positioned between the support plates and fixedly coupled to the support plates. Each of the support plates includes an upper plate, a lower plate, and a stopper member. The lower plate has an inner flow path formed therein, is disposed to face the upper plate, and has a plurality of through holes formed corresponding to each of the inflection points of the inner flow path. In a state where the upper plate and the lower plate are joined to each other, the stopper member is inserted into the through holes.

[0026] In an exemplary embodiment of the present invention, a plating layer may be formed on an inner surface of the inner flow path.

[0027] In an exemplary embodiment of the present invention, a diameter of the through hole may be equal to or less than a width of the inner flow path.

[0028] In an exemplary embodiment of the present invention, the stopper member may be formed by a laser welding method or an ultrasonic welding method.

[0029] In an exemplary embodiment of the present invention, the stopper member may include a bolt.

[0030] According to the support plate, a method of manufacturing the support plate, and a substrate processing apparatus having the support plate, by forming separate through holes in a structure where it is impossible to coat or plate the inner flow path, the flow of ions is possible during electroless plating or electroplating, and surface treatment is possible. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The above and other features and aspects of the present invention will become more apparent by referring to the following detailed description of exemplary embodiments of the present invention with reference to the accompanying drawings, in which:

[0032] Figure 1 is a perspective view schematically showing a substrate processing apparatus according to an exemplary embodiment of the present invention;

[0033] Figure 2 shows Figure 1 a cross-sectional view of the substrate processing apparatus of the coating block or the developing block shown in

[0034] Figure 3 is Figure 1 a plan view of the substrate processing apparatus shown in

[0035] Figure 4 shows Figure 1 a perspective view of an example of the buffer module shown in

[0036] Figure 5 shows Figure 4 a perspective view of the buffer unit of the buffer module shown in

[0037] Figure 6 shows Figure 5 a plan view of the support plate of the buffer unit shown in

[0038] Figure 7A is a cross-sectional view taken along line I-I' of the support plate shown in Figure 6 and Figure 7B is a cross-sectional view taken along line II-II' of the support plate shown in Figure 6 ;

[0039] Figures 8A to 8E shows Figure 6 an example of a manufacturing method of the support plate shown in

[0040] Figures 9A to 9F and Figure 6 is a cross-sectional view showing another example of the manufacturing method of the support plate shown in DETAILED DESCRIPTION

[0041] The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. However, the present invention may be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the dimensions and relative dimensions of layers and regions may be exaggerated for clarity.

[0042] It will be understood that when an element or layer is referred to as being "on", "connected to" or "coupled to" another element or layer, it can be directly on, connected to or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on", "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers. The same reference numerals always refer to the same elements. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0043] It will be understood that although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another. Thus, a first element, first component, first region, first layer or first section discussed below could be termed a second element, second component, second region, second layer or second section without departing from the teachings of the present invention.

[0044] For ease of description, spatially relative terms, such as "below", "beneath", "lower", "above", "upper", etc., may be used herein to describe the relationship of one element or feature to another (or other) element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, an element described as "below" or "beneath" another element or feature will then be oriented "above" the other element or feature. Thus, the exemplary term "below" can encompass both an orientation above and below. The device may have other orientations (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.

[0045] The terms used herein are for the purpose of describing particular embodiments only and are not intended to limit the disclosure. Unless the context clearly dictates otherwise, as used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well. It will be further understood that when the terms "comprises" and / or "comprising" are used in this specification, they specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or combinations thereof.

[0046] In this document, exemplary embodiments of the present invention are described with reference to cross-sectional views, which are schematic diagrams of idealized exemplary embodiments (and intermediate structures) of the present invention. Accordingly, deviations from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are to be expected. Thus, the exemplary embodiments of the present invention should not be construed as being limited to the specific shapes of the regions shown herein, but will include shape deviations caused by, for example, manufacturing. For example, an implantation region shown as rectangular will typically have rounded or curved features at its edges and / or a gradient of implantation concentration, rather than a binary change from the implantation region to the non-implantation region. Similarly, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation occurs. Thus, the regions shown in the figures are schematic in nature, and their shapes are not intended to depict the actual shape of the regions of the device and are not intended to limit the scope of the present invention.

[0047] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will also be understood that terms, such as those defined in a general dictionary, should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0048] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

[0049] Figure 1 is a perspective view schematically showing a substrate processing apparatus according to an exemplary embodiment of the present invention. Figure 2 shows Figure 1 a cross-sectional view of the substrate processing apparatus of the coating block or developing block shown in Figure 3 is Figure 1 a plan view of the substrate processing apparatus shown in

[0050] Referring to Figures 1 to 3 , a substrate processing apparatus 10 according to an exemplary embodiment of the present invention includes a transfer module 100, a processing module 300, buffer modules 400a and 400b, and an interface module 500. Hereinafter, the direction in which the transfer module 100, the processing module 300, the buffer modules 400a and 400b, and the interface module 500 are arranged is defined as a first direction 12. When viewed from the top, the direction perpendicular to the first direction 12 is defined as a second direction 14. The direction perpendicular to the first direction 12 and the second direction 14 is defined as a third direction 16.

[0051] The transfer module 100 transfers the substrate from the container F from which it receives the substrate to the processing module 300 and receives the processed substrate into the container F. The longitudinal direction of the transfer module 100 is set in the second direction 14. The transfer module 100 includes a load port 110 and a transfer frame 130. The load port 110 is provided on the opposite side of the transfer frame 130 with respect to the processing module 300. The container F in which the substrate is accommodated is placed in the load port 110. A plurality of load ports 110 may be provided, and the plurality of load ports 110 may be arranged along the second direction 14.

[0052] As the container F, a sealed container F such as a front opening unified pod (FOUP) may be used. The container F may be placed in the load port 110 by a transfer device (not shown) such as an overhead transfer device, an overhead transporter, or an automated guided vehicle (AGV) or an operator.

[0053] A transfer robot 132 is provided within the transfer frame 130. In the transfer frame 130, a guide rail 136 having a longitudinal direction set in the second direction 14 may be provided, and the transfer robot 132 may be arranged to be movable on the guide rail 136. The transfer robot 132 includes a hand on which the substrate is placed. The hand may be arranged to move forward and backward, rotate about the third direction 16, and may move along the third direction 16.

[0054] The processing module 300 may perform a coating process and a developing process on the substrate. The processing module 300 may receive the substrate accommodated in the container F to perform a substrate processing process. The processing module 300 has a plurality of coating blocks 300a and a plurality of developing blocks 300b. The plurality of coating blocks 300a perform a coating process on the substrate, and the plurality of developing blocks 300b perform a developing process on the substrate. The coating blocks 300a are arranged to be stacked on top of each other. The developing blocks 300b are arranged to be stacked on top of each other. According to Figure 1 an exemplary embodiment, two coating blocks 300a and two developing blocks 300b are respectively provided. The coating blocks 300a may be provided below the developing blocks 300b. According to the exemplary embodiment, the two coating blocks 300a may perform the same process and may be provided in the same structure. In addition, the two developing blocks 300b may perform the same process and may be provided in the same structure.

[0055] Referring to Figure 3, the coating block 300a includes a heat treatment chamber 320, a transfer chamber 350, and a liquid processing chamber 360. The heat treatment chamber 320 performs a heat treatment process on the substrate. The heat treatment process may include a cooling process and a heating process. The liquid processing chamber 360 forms a liquid film by supplying a liquid onto the substrate. The liquid film may be a photoresist film or an antireflection film. The transfer chamber 350 transfers the substrate between the heat treatment chamber 320 and the liquid processing chamber 360 in the coating block 300a.

[0056] The transfer chamber 350 is provided with a longitudinal direction parallel to the first direction 12. A transfer robot 352 is disposed in the transfer chamber 350. The transfer robot 352 transfers the substrate between the heat treatment chamber 320, the liquid processing chamber 360, and the buffer module 400. According to an exemplary embodiment, the transfer robot 352 has a hand on which the substrate is placed. The hand can move forward and backward, rotate about the third direction 16, and can move along the third direction 16. A guide rail 356 having a longitudinal direction parallel to the first direction 12 is disposed in the transfer chamber 350, and the transfer robot 352 can be arranged to be movable on the guide rail 356.

[0057] A plurality of buffer modules 400a and 400b are provided. Some of these buffer modules 400a and 400b are disposed between the indexing module 100 and the processing module 300. Hereinafter, the buffer modules 400a and 400b are referred to as front-end buffers 400a. A plurality of front-end buffers 400a are provided, and the plurality of front-end buffers 400a are positioned to be stacked on top of each other in the vertical direction. Other buffer modules 400a and 400b are disposed between the processing module 300 and the interface module 500. Hereinafter, these buffer modules 400a and 400b are referred to as back-end buffers 400b. A plurality of back-end buffers 400b are provided, and the plurality of back-end buffers 400b are positioned to be stacked on top of each other in the vertical direction. Each of the front-end buffer 400a and the back-end buffer 400b temporarily stores a plurality of substrates. The substrates stored in the front-end buffer 400a are transferred in and out by the indexing robot 132 and the transfer robot 352. The substrates stored in the back-end buffer 400b are transferred in and out by the transfer robot 352 and the first robot 552.

[0058] Hereinafter, the buffer modules 400a and 400b will be described with reference to the front-end buffer 400a.

[0059] Figure 4 is a perspective view showing Figure 1 an example of the buffer module shown in Figure 5 is a perspective view showing Figure 4 the buffer unit of the buffer module shown in Figure 6 is a perspective view showing Figure 5Plan view of the support plate of the buffer unit shown in Figure 7A is a cross-sectional view taken along line I-I' of the support plate shown in Figure 6 and Figure 7B is a cross-sectional view taken along line II-II' of the support plate shown in Figure 6 .

[0060] Referring to Figures 4 to 7B , the buffer module 400 includes a frame 401, a buffer unit 410, and a buffer robot 430.

[0061] The frame 401 can be set in the shape of a rectangular parallelepiped with an empty interior. The frame 401 is disposed between the indexing module 100 and the liquid processing chamber 360. The buffer unit 410 and the buffer robot 430 are disposed in the frame 401.

[0062] The buffer unit 410 temporarily stores the substrate during the process of processing the substrate. The buffer unit 410 can be disposed in a structure for cooling the substrate. The buffer unit 410 includes a housing 412, a support plate 414, and a connection block 416.

[0063] The housing 412 has an empty space therein. The housing 412 generally has a rectangular shape. The housing 412 is disposed in the frame 401 of the front buffer 400a. The housing 412 is disposed between the indexing module 100 and the processing module 300. The sides of the housing 412 are open. As an example, two side surfaces of the housing 412 are open. The open space of the housing 412 is set as a passage through which the substrate enters and exits. A base 413 is disposed in the housing 412.

[0064] The base 413 can be set as a rectangular plate. A plurality of bases 413 can be provided. Each base 413 is vertically and parallelly positioned. A plurality of support plates 414 can be stacked and positioned on the upper part of each base 413. As an example, three bases 413 can be provided.

[0065] The substrate is placed on the support plate 414. When viewed from the top, the support plate 414 is set in a circular shape. The support plate 414 can have dimensions corresponding to the dimensions of the substrate.

[0066] In the above example, the buffer unit 410 is divided into three spaces within the housing 412 and the support plate 414 is provided, but the number of spaces within the housing can be set differently.

[0067] A plurality of support plates 414 are provided. Each of the support plates 414 is arranged to be stacked in the vertical direction. The support plates 414 can be made of an aluminum material. Connecting blocks 416 are positioned between the support plates 414. The support plates 414 are positioned to be spaced apart from each other by the connecting blocks 416. Each of the support plates 414 is fixedly coupled to the connecting blocks 416. Each of the support plates 414 can be provided in the same size. Each of the support plates 414 can be arranged to be spaced apart from each other at the same height.

[0068] The support plate 414 has an internal flow path 4142 formed therein, through which a thermostatic fluid flows. The thermostatic fluid can be provided as a coolant. A first end of the internal flow path 4142 is connected to a supply line 4144 that supplies a cryogenic fluid. The supply line 4144 is connected to a refrigerant source 4146. A second end of the internal flow path 4142 is connected to a discharge line 4148. The refrigerant source 4146 supplies the thermostatic fluid to the internal flow path 4142. The cryogenic fluid supplied to the supply line 4144 flows in the internal flow path 4142 and is discharged to the outside through the discharge line 4148. Heat and cold from the cryogenic fluid flow along the internal flow path 4142 and reduce the temperature of the support plate 414. The support plate 414 exchanges heat with a substrate placed on the support plate 414.

[0069] In this embodiment, the support plate 414 includes a combined upper plate 414a and a lower plate 414b. The upper plate 414a has a flat shape and is disposed on top of the lower plate 414b. The substrate can be disposed on top of the upper plate 414a. The internal flow path 4142 is formed in the lower plate 414b and is arranged facing the upper plate 414a. A plurality of perforations (not shown) are formed corresponding to each inflection point of the internal flow path 4142. The diameter of the perforations can be equal to or less than the width of the internal flow path 4142. In this embodiment, the number of inflection points is 14, and thus, the number of perforations is also 14.

[0070] A plating layer 414c is formed on the inner surface of the internal flow path 4142. The plating layer 414c includes nickel-phosphorus (Ni-P). The plating layer 414c can be formed by an electroless plating method or can be formed by an electrolytic plating method. In this embodiment, the plating layer 414c can be formed by electroless nickel plating, which has better corrosion resistance than electrolytic nickel plating. In this embodiment, nickel and phosphorus are used to form the plating layer 414c, and a higher percentage of phosphorus results in fewer pinholes and improved corrosion resistance.

[0071] When the upper plate 414a and the lower plate 414b are joined together, the stopper member 414d is inserted into the through-hole. In one example, the stopper member 414d can be welded into the through-hole using laser welding. In another example, the stopper member 414d can be fused into the through-hole using an ultrasonic bonding method. In yet another example, the stopper member 414d can include a bolt.

[0072] As described above, in the present invention, the internal flow path is formed in the aluminum plate and is used as a cooling substrate in the same manner as in the prior art by brazing. However, in this structure, internal surface treatment is not possible. Therefore, through-holes are formed at the positions of the internal flow path on the lower surface (i.e., opposite to the wafer mounting surface), and separate paths are formed to enable electroless plating or electroplating. As described above, according to the present invention, by forming separate through-holes in a structure where it is impossible to coat or plate the internal flow path, surface treatment can be performed by allowing ions to flow during electroless plating or electroplating.

[0073] Figures 8A to 8E is a cross-sectional view showing Figure 6 an example of a method for manufacturing the support plate shown in

[0074] Referring to Figure 8A , the shape of the upper plate 414a is processed. Further, in order to form the internal flow path, the shape of the lower plate 414b is processed, which has a lower groove LGR formed on its upper surface and a plurality of through-holes PHO formed in regions corresponding to each of the inflection points of the internal flow path of the lower groove LGR. In the drawing, the left lower groove represents a partial region corresponding to the inflection point of the internal flow path, and the right lower groove represents a partial region not corresponding to the inflection point of the internal flow path. Here, an upper groove can be further formed on the lower surface of the upper plate 414a to form the internal flow path.

[0075] Then, as Figure 8B shown, the lower surface of the upper plate 414a and the upper surface of the lower plate 414b are brazed at a temperature of about 600 degrees Celsius to form a support plate having an internal space. Here, brazing is a method of melting a metal (e.g., filler metal) (not shown) having a melting point lower than that of the upper plate 414a or the lower plate 414b without melting the upper plate 414a or the lower plate 414b as the base material, and binding it between the lower surface of the upper plate 414a and the upper surface of the lower plate 414b by surface tension through suction.

[0076] Then, as Figure 8C shown, a plating layer PLA is formed by performing a first surface treatment by Ni-P plating in the internal space passing through the through-holes PHO.

[0077] Then, asFigure 8D As shown, a process of filling the perforations PHO with the stopper member SME is performed.

[0078] Then, as Figure 8E shown, the outer surface of the support plate filled with the perforations PHO by the stopper member SME is treated with a second surface treatment by an anodizing process to form a surface coating SCL. Here, anodizing refers to the process of forming an oxide film on a metal surface. For example, anodizing means making the support plate act as an anode in an electrolyte and applying a voltage to form an alumina (Al 2 O 3 ) film. The surface treatment process may also include a plasma electrolytic oxidation process.

[0079] Figures 9A to 9F is a cross-sectional view showing another example of a method for manufacturing the support plate shown in Figure 6 .

[0080] Referring to Figure 9A , the shape of the upper plate 414a is processed. The shape of each of the lower plates 414b having lower grooves LGR formed on their upper surfaces is processed to form an inner flow path facing the upper plate 414a. In Figure 9A , the left lower groove represents a partial region corresponding to the inflection point of the inner flow path, and the right lower groove represents a partial region not corresponding to the inflection point of the inner flow path. Here, upper grooves may be further formed on the lower surface of the upper plate 414a to form an inner flow path.

[0081] Then, as Figure 9B shown, the lower surface of the upper plate 414a and the upper surface of the lower plate 414b are brazed at a temperature of about 600 degrees Celsius to form a support plate having an internal space. Here, brazing is a method of melting a metal (e.g., filler metal) (not shown) having a melting point lower than that of the upper plate 414a or the lower plate 414b without melting the upper plate 414a or the lower plate 414b as the base material, and binding it between the lower surface of the upper plate 414a and the upper surface of the lower plate 414b by suction through surface tension.

[0082] Then, as Figure 9C shown, among some regions of the lower grooves LGR formed in the lower plate 414b of the support plate, a plurality of perforations PHO are formed in regions corresponding to each of the inflection points of the inner flow path.

[0083] Then, as Figure 9D shown, a plating PLA is formed by performing a first surface treatment by Ni - P plating in the internal space passing through the perforations PHO.

[0084] Then, as Figure 9EAs shown, a process of filling the perforation PHO with the stopper member SME is performed.

[0085] Finally, as Figure 9F shown, the outer surface of the support plate in which the perforation PHO is filled with the stopper member SME is treated with a second surface treatment by an anodizing process to form a surface coating SCL. Here, anodizing refers to the process of forming an oxide film on a metal surface. For example, anodizing refers to the process of making the support plate act as an anode in an electrolyte and applying a voltage to form an aluminum oxide (Al 2 O 3 ) film. The surface treatment process may also include a plasma electrolytic oxidation process.

[0086] As described above, according to the present invention, an internal flow path is formed on an aluminum plate and joined by brazing to be used as a cooling substrate, but a perforation is formed as a separate path at a position of the internal flow path opposite to the wafer placement surface so that electroless plating or electroplating can be performed. As described above, by forming a separate perforation in a structure where it is impossible to coat or plate the internal flow path, an ion flow is possible during electroless plating or electroplating, and surface treatment is possible. Therefore, by forming a separate perforation in a structure where it is impossible to coat or plate the internal flow path, an ion flow is possible during electroless plating or electroplating, and surface treatment is possible.

[0087] Exemplary embodiments of the present invention have been described. It should also be noted that it will be apparent to those of ordinary skill in the art that various modifications can be made without departing from the spirit and scope of the present invention as defined by the bounds and scope of the appended claims.

Claims

1. A support plate, comprising: upper plate; a lower plate having an inner flow path formed therein, disposed to face the upper plate, and having a plurality of perforations formed corresponding to each of inflection points of the inner flow path; as well as A stopper member is inserted into the through hole in a state where the upper plate and the lower plate are engaged with each other.

2. The support plate according to claim 1, wherein: A plating layer is formed on an inner surface of the inner flow path.

3. The support plate according to claim 2, wherein: The plating layer includes nickel-phosphorus.

4. The support plate according to claim 1, wherein: The diameter of the perforation is equal to or smaller than the width of the inner flow path.

5. The support plate according to claim 1, wherein: The stop member is laser welded to the through hole.

6. The support plate according to claim 1, wherein: The stop member is fused to the through hole by an ultrasonic welding method.

7. The support plate according to claim 1, wherein: The stopping member includes a bolt.

8. A method for manufacturing a support plate, the method comprising: processing each of the upper plate and the lower plate, respectively, the lower plate having a lower groove formed on the upper surface to form an inner flow path and a plurality of perforations formed in a partial area of ​​the lower groove corresponding to each of the inflection points of the inner flow path; Brazing the lower surface of the upper plate and the upper surface of the lower plate to form a support plate having an inner space; performing a first surface treatment on the inner space through the perforation; filling the perforation with a stop member; as well as On the outer surface of the support plate where the through holes are filled by the stopping member, a second surface treatment is performed.

9. The method according to claim 8, wherein: An upper groove is formed on the lower surface of the upper plate to correspond to the lower groove formed in the lower plate.

10. The method according to claim 8, wherein: Performing the first surface treatment includes nickel-phosphorus plating.

11. The method according to claim 8, wherein: Performing the second surface treatment includes anodizing.

12. A method of manufacturing a support plate, the method comprising: processing each of the upper plate and the lower plate separately, the lower plate having a lower groove formed on an upper surface to form an inner flow path; Brazing the lower surface of the upper plate and the upper surface of the lower plate to form a support plate having an inner space; forming a plurality of perforations in a partial area of ​​the lower groove formed in the lower plate of the support plate corresponding to each of the inflection points of the inner flow path; performing a first surface treatment on the inner space through the perforation; filling the perforation with a stop member; as well as On the outer surface of the support plate where the through holes are filled by the stopping member, a second surface treatment is performed.

13. The method according to claim 12, wherein: An upper groove is formed on the lower surface of the upper plate to correspond to the lower groove formed in the lower plate.

14. The method according to claim 12, wherein: Performing the first surface treatment includes nickel-phosphorus plating.

15. The method according to claim 12, wherein: Performing the second surface treatment includes anodizing.

16. A substrate processing device comprising: an indexing module that transfers the substrate from a container that holds the substrate and receives the processed substrate back into the container; a processing module that performs a coating process and a developing process on the substrate, receives the substrate accommodated in the container from the indexing module, and performs a substrate processing process; as well as a plurality of buffer modules, partially disposed between the indexing module and the processing module; The buffer module includes: a frame including a rectangular parallelepiped shape with a hollow interior; and a buffer unit disposed inside the frame to temporarily store the substrate during a process of processing the substrate. The buffer unit includes: a housing having an empty space therein; a support plate on which the substrate is disposed; and a connection block positioned between the support plates and fixedly coupled to the support plates. Wherein, each of the support plates comprises: upper plate; a lower plate having an inner flow path formed therein, disposed to face the upper plate, and having a plurality of perforations formed corresponding to each of inflection points of the inner flow path; and A stopper member is inserted into the through hole in a state where the upper plate and the lower plate are engaged with each other.

17. The substrate processing apparatus according to claim 16, wherein: A plating layer is formed on an inner surface of the inner flow path.

18. The substrate processing apparatus according to claim 16, wherein: The diameter of the perforation is equal to or smaller than the width of the inner flow path.

19. The substrate processing apparatus according to claim 16, wherein: The stopping member is formed by a laser welding method or an ultrasonic welding method.

20. The substrate processing apparatus according to claim 16, wherein: The stopping member includes a bolt.

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