Support sleeve for supporting processing vessel and associated semiconductor processing furnace

Abstract

A support sleeve and a semiconductor processing furnace including such a support sleeve are disclosed. The disclosed support sleeve includes a single support surface for supporting a processing vessel within a semiconductor processing furnace. The disclosed support sleeve also includes a plurality of internal gas channels configured to form a gas seal between the support sleeve and a processing vessel supported thereon.

Description

Field of the Invention

[0001] The present invention generally relates to the field of semiconductor processing equipment and systems, as well as the field of device and integrated circuit manufacturing. More specifically, the present invention relates to a support sleeve for supporting a processing container within a semiconductor processing furnace. Background Art

[0002] Batch processing of semiconductor substrates is typically performed in a semiconductor processing furnace. For example, such semiconductor processing furnaces are typically used for high-temperature processes with temperatures above 1000 °C. Such a semiconductor processing furnace may include an internal processing container supported within the furnace by a support structure. Such a support structure typically includes a plurality of support surfaces that engage the processing container at different locations to support and position the processing container within the semiconductor processing furnace.

[0003] However, the processing container and the support structure are typically made of different materials having different coefficients of thermal expansion. As a result, the multiple contact interfaces between the processing container and the support structure are subject to increasing stress during the thermal cycling of the furnace. Such stress can cause damage to one or more of the processing container and the support structure and form unwanted particles. Therefore, an improved support structure is needed to reduce particle formation and prevent any particles that do form from entering the reaction space within the processing container.

[0004] Any discussion set forth in this section, including discussions of problems and solutions, has been included in this disclosure solely to provide a background for the disclosure. Such discussion should not be construed as an admission that any or all of the information was known at the time the invention was made or constitutes prior art. Summary of the Invention

[0005] This Summary of the Invention introduces some concepts in a simplified form that will be further described in detail below. This Summary of the Invention is not necessarily intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0006] According to an example of the present disclosure, there is provided a support sleeve for supporting a processing container, the support sleeve including a flange protruding from an outer surface of the processing container and a base surface for sealing the processing container in a semiconductor processing furnace. In such an example, the support sleeve includes an inner surface and an outer surface, a top surface and a bottom surface, the top surface being configured and arranged to engage and support the processing container at the flange. In such an example, the support container includes a shoulder, the shoulder including an intermediate surface disposed between the top surface and the bottom surface. In such an example, the intermediate surface extends from the inner surface and is configured and arranged to form part of a diffusion barrier channel between the intermediate surface of the shoulder and the base surface of the processing container.

[0007] In some embodiments, the support sleeve is made of a single piece of material.

[0008] In some embodiments, the top surface of the support sleeve is an annular top surface that extends between the outer surface of the support sleeve and the inner surface of the support sleeve.

[0009] In some embodiments, the shoulder is an annular shoulder. In such embodiments, the intermediate surface is an annular surface.

[0010] In some embodiments, the support sleeve further includes a circumferential channel disposed within the support sleeve and in fluid communication with the gas inlet channel.

[0011] In some embodiments, the support sleeve further includes a plurality of supply channels disposed within the support sleeve, each supply channel having a first end in fluid communication with the circumferential channel and a second end in fluid communication with a gas injection hole. In such embodiments, each gas injection hole extends from the second end of the supply channel through the inner surface of the support sleeve.

[0012] According to a further example of the present disclosure, there is provided a support sleeve for supporting a processing container. In such an example, the support sleeve includes a hollow cylindrical core that includes an outer surface, an inner surface, a bottom surface, and an annular top surface that extends between the outer surface and the inner surface, the annular top surface being configured and arranged as a single support surface to support the processing container during operation. In such an example, the support sleeve includes an annular shoulder that extends inwardly from a lower portion of the inner surface, the annular shoulder having an intermediate surface that is configured and arranged to form a portion of a diffusion barrier channel between the intermediate surface of the annular shoulder and the base surface of the processing container when supported on the annular top surface. In such an example, the support sleeve includes a circumferential channel disposed within the single-piece support sleeve and in fluid communication with a gas inlet that extends outwardly from the outer surface. In such an example, the support sleeve includes a plurality of supply channels disposed within the hollow cylindrical core, each supply channel having a first end in fluid communication with the circumferential channel and a second end in fluid communication with a gas injection hole. In such an example, each gas injection hole extends from the second end of the supply channel through the inner surface of the single-piece support sleeve.

[0013] According to additional examples of the present disclosure, a semiconductor processing furnace is provided. In such an example, the semiconductor processing furnace includes a support sleeve that includes an inner surface, an outer surface, a top surface, a bottom surface, and an intermediate surface disposed between the top surface and the bottom surface, the intermediate surface extending inwardly from the inner surface of the support sleeve. In such an example, the semiconductor processing furnace includes a processing container covering the support sleeve, the processing container including a base surface and a flange protruding from the outer surface of the processing container. In such an example, the lower side of the flange contacts the top surface of the support sleeve and the base surface of the processing container, and the intermediate surface of the support sleeve defines a portion of a diffusion barrier channel for hermetically isolating the support sleeve from the processing container.

[0014] In some embodiments, the support sleeve has a hollow cylindrical core.

[0015] In some embodiments, the top surface is an annular top surface. In such an example, the intermediate surface is the upper surface of an annular shoulder. In such an example, the intermediate surface of the support sleeve is a single support surface for supporting the processing container thereon.

[0016] In some embodiments, the support sleeve of the semiconductor processing furnace includes a circumferential channel disposed within the support sleeve and in fluid communication with a gas inlet channel.

[0017] In some embodiments, the support sleeve of the semiconductor processing furnace includes a plurality of supply channels disposed within the support sleeve, each supply channel having a first end in fluid communication with the circumferential channel and a second end in fluid communication with a gas injection hole. In such an example, each gas injection hole extends from the second end of the supply channel through the inner surface of the support sleeve.

[0018] In some embodiments, the semiconductor processing furnace includes a first portion of a diffusion barrier channel, the first portion including a channel formed between the inner surface of the support sleeve and the outer surface of the processing container.

[0019] In some embodiments, the semiconductor processing furnace includes a second portion of a diffusion barrier channel, the second portion including a channel formed between the base surface of the processing container and the intermediate surface of the support sleeve.

[0020] In some embodiments, the support container of the semiconductor processing furnace is made of a single piece of material.

[0021] To summarize the invention and the advantages achieved over the prior art, certain objects and advantages of the invention have been described above. Of course, it should be understood that not necessarily all of these objects or advantages may be achieved in accordance with any particular embodiment of the invention. Thus, for example, those skilled in the art will recognize that the invention may be practiced or carried out in a manner that achieves or optimizes one advantage or a group of advantages taught or suggested herein, without necessarily achieving other objects or advantages taught or suggested herein.

[0022] All such embodiments are within the scope of the invention disclosed herein. From the following detailed description of certain embodiments taken in conjunction with the accompanying drawings, these and other embodiments will become apparent to those skilled in the art, and the invention is not limited to any particular embodiment disclosed. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] To facilitate the discussion of any particular element or act, the most significant digit in the reference numeral refers to the figure number in which the element is first introduced.

[0024] A more complete understanding of the embodiments of the present disclosure can be obtained by reference to the detailed description and the claims when considered in conjunction with the following illustrative drawings.

[0025] Figure 1 A semiconductor processing furnace is shown in accordance with one or more embodiments of the present disclosure.

[0026] Figure 2 A cross-sectional view of a support sleeve is shown in accordance with one or more embodiments of the present disclosure.

[0027] Figure 3 A plan view of a support sleeve is shown in accordance with one or more embodiments of the present disclosure.

[0028] Figure 4 A perspective view of a support sleeve is shown in accordance with one or more embodiments of the present disclosure.

[0029] Figure 5 Another perspective view of a support sleeve is shown in accordance with one or more embodiments of the present disclosure.

[0030] Figure 6 A cross-sectional view of a processing container supported on a support sleeve is shown in accordance with one or more embodiments of the present disclosure.

[0031] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to assist in improving understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION

[0032] The following description of exemplary embodiments of the devices and systems provided below is merely exemplary and for illustrative purposes only. The following description is not intended to limit the scope of the present disclosure or the claims. Further, the recitation of multiple embodiments having the noted features or steps is not intended to exclude other embodiments having additional features or steps, or other embodiments that combine different combinations of the recited features or steps.

[0033] As used herein, the term "substrate" may refer to any one or more underlying materials that can be used to form or on which devices, circuits, or films can be formed by a method according to embodiments of the present invention. The substrate may include bulk materials such as silicon (e.g., single-crystalline silicon), other Group IV materials such as germanium, or other semiconductor materials such as Group II-VI or Group III-V semiconductor materials, and may include one or more layers covering or underlying the bulk material. Additionally, the substrate may include various features such as depressions, protrusions, etc. formed within or on at least a portion of the substrate layer. For example, the substrate may include a bulk semiconductor material and an insulating or dielectric material layer covering at least a portion of the bulk semiconductor material. Further, the term "substrate" may refer to any one or more underlying materials that can be used or on which devices, circuits, or films can be formed. The "substrate" may be continuous or discontinuous; rigid or flexible; solid or porous. The "substrate" may be in any form, such as powder, plate, or workpiece. Plate-like substrates may include wafers of various shapes and sizes. The substrate may be made of materials such as silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide. A continuous substrate may extend beyond the boundaries of the processing chamber where the deposition process occurs and may be moved through the processing chamber such that the process continues until the end of the substrate is reached. A continuous substrate may be provided by a continuous substrate supply system that allows for the fabrication and output of the continuous substrate in any suitable form. Non-limiting examples of continuous substrates may include sheets, non-woven membranes, rolls, foils, meshes, flexible materials, a bundle of continuous filaments or fibers (i.e., ceramic fibers or polymer fibers). A continuous substrate may also include a carrier or sheet on which a discontinuous substrate is mounted. For example, the substrate may include a semiconductor material. The semiconductor material may include or be used to form one or more of the source, drain, or channel regions of a device. The substrate may also include an interlayer dielectric (e.g., silicon oxide) and / or a high-k dielectric material layer covering the semiconductor material. In this document, a high-k dielectric material (or high-k dielectric) is a material having a dielectric constant greater than that of silicon dioxide.

[0034] Semiconductor processing furnaces typically employ an internal processing container in which various semiconductor manufacturing processes are carried out. The processing container is typically made of silicon carbide (SiC) because it can withstand high temperatures and the thermal cycling operations performed by the furnace.

[0035] A processing container is typically supported within a furnace by a support structure, which is referred to herein as a support sleeve. Existing support sleeves typically include multiple support surfaces configured to engage and support the processing container. However, the support sleeve is typically made of one or more materials having a lower thermal conductivity than the silicon carbide processing container to prevent heat from conducting out of the processing container. This difference in materials results in a difference in the coefficient of thermal expansion between the processing container and the support sleeve, thereby generating high stresses at multiple contact interfaces between the processing container and the support sleeve during the thermal cycling of the semiconductor processing furnace. Such stresses generate particles that not only have a detrimental effect on the processes carried out within the processing container but also lead to more frequent maintenance to keep the semiconductor processing furnace operating. Additionally, one or more seals are typically employed to prevent gas exchange between the processing container and the external environment. Typically, such seals take the form of physical seals. For example, the seal can be formed by the contact surfaces of the processing container and the underlying support structure. However, such physical seals may not be completely airtight and may thus allow some gas to leak into and / or out of the processing container.

[0036] Accordingly, various embodiments of the present disclosure provide a support sleeve having a single support surface for supporting a processing container within a furnace. Employing a single support surface reduces the number of interfaces between the support sleeve and the processing container, thereby reducing particle formation and the need for frequent furnace maintenance. Additionally, various embodiments of the present disclosure provide a support sleeve that includes multiple integrated gas channels capable of providing a uniform gas flow directed inwardly from the inner surface of the support sleeve, where "inwardly" as used herein can refer to a direction toward the center of the support sleeve, i.e., toward the processing container. This gas flow from the support sleeve forms a diffusion barrier between the processing container and the support sleeve, thereby forming a non-physical seal (i.e., a gas seal). The use of such a gas seal eliminates the need for a physical seal that completely seals between the processing container and the support sleeve, which further enables the use of a support sleeve having a single support surface.

[0037] Turning now to the drawings, Figure 1 is a simplified schematic view of a semiconductor processing furnace 100, including a support sleeve 102 according to an example of the present disclosure. The semiconductor processing furnace 100 includes a processing container 104 supported by the support sleeve 102, which in turn is supported by a flange 106. The processing container 104 supported by the support sleeve 102 is heated by a heater 108, and an insulating material 110 is disposed between the heater 108 and the housing 112. A processing region or reaction space 114 is defined by the processing container 104, within which processing gases can interact with a substrate (not shown) during a semiconductor manufacturing process (the processing container 104 is open at its bottom and top and is within the interior of the housing 112).

[0038] As Figure 1 shown, the processing container 104 includes a flange 116 protruding from an outer surface 118 of the processing container 104. According to an example of the present disclosure, an interface between the flange 116 and a top surface of the support sleeve 102 is a single support interface between the processing container 104 and the support sleeve 102, as described in more detail below. Additionally, the support sleeve 102 includes a gas inlet port in fluid communication with a plurality of gas injection holes 122 for forming a diffusion barrier (i.e., a gas seal) between the processing container 104 and the support sleeve 102, as described in more detail below.

[0039] Figure 2 , Figure 3 , Figure 4 and Figure 5 are illustrations of various views of the support sleeve of the present disclosure. Figure 2 A cross-sectional view of an exemplary support sleeve according to an embodiment of the present disclosure is shown. Figure 3 A plan view of an exemplary support sleeve according to an embodiment of the present disclosure is shown. Figure 4 A perspective view of an exemplary support sleeve including a partial cutaway according to an embodiment of the present disclosure is shown, Figure 5 showing an embodiment of the present disclosure Figure 4 of an enlarged view of a portion.

[0040] More specifically, referring to Figures 2 - 5 , the support sleeve 102 includes an inner surface 204, an outer surface 206, a bottom surface 210, and a top surface 208. In such an example, the surfaces 204, 206, 208, and 210 define a core of the support sleeve 102. In some embodiments, the core of the support sleeve 102 includes a hollow cylinder, i.e., the support sleeve 102 includes a hollow cylindrical core. In some embodiments, the support sleeve 102 is made of a single piece of material. In such an embodiment, the support sleeve 102 is a single-piece support sleeve. In some embodiments, the support sleeve 102 is made of two or more pieces of material. In such an embodiment, the support sleeve 102 is a multi-piece support sleeve. In some embodiments, the support sleeve 102 is made of quartz. In some embodiments, the support sleeve 102 is made of a single piece of quartz. In some embodiments, the support sleeve 102 is made of silicon carbide. In some embodiments, the support sleeve 102 is made of a single piece of silicon carbide. In an example where the support sleeve is a multi-piece support sleeve, two of the multi-piece materials used to manufacture the multi-piece support sleeve may each include quartz and / or silicon carbide.

[0041] According to an example of the present disclosure, the support sleeve 102 includes a top surface 208. In such an example, the top surface 208 of the support sleeve 102 is configured and arranged to engage and support a processing container, as described in more detail below. According to an example of the present disclosure, the top surface 208 is a single support surface for supporting a processing container thereon. In such an example, the support sleeve 102 does not include any additional surfaces that contact the processing container. In some embodiments, the top surface 208 includes an annular top surface that extends between the outer surface 206 and the inner surface 204. In such an embodiment, the annular top surface is configured and arranged to support a processing container within a semiconductor processing furnace.

[0042] According to an example of the present disclosure, the support sleeve 102 includes a shoulder 212 that extends inwardly (i.e., towards the center of the support sleeve) from the inner surface 204 of the support sleeve. In such an example, the shoulder 212 includes an intermediate surface 214 disposed between the top surface 208 and the bottom surface 210. In such an example, the intermediate surface 214 is the upper surface of the shoulder 212 and extends inwardly from the inner surface 204 of the support sleeve 102. In some embodiments, the shoulder 212 is an annular shoulder that extends inwardly from the lower portion of the inner surface 204. In such an example, the annular shoulder is concentric with the annular top surface, and the annular shoulder and the annular top surface have the same center point (as Figure 3 shown). In some embodiments, the shoulder 212, particularly the intermediate surface 214 of the shoulder 212, is configured and arranged to form a hole between the intermediate surface 214 and the base surface of the processing container, as described in more detail below.

[0043] The support sleeve of the present invention further includes an integrated gas channel for forming a diffusion barrier between the processing container and the support sleeve. Briefly, the support sleeve of the present invention includes a gas inlet port that includes a gas inlet channel for injecting a sealing gas into a circumferential channel provided with the support sleeve. The internal circumferential channel distributes the sealing gas around the entire circumference of the support sleeve. The sealing gas flows from the circumferential channel into a plurality of supply channels distributed around the support sleeve, and the supply channels in turn transport the sealing gas to a plurality of gas injection holes that extend into and through the inner surface of the support sleeve. The plurality of gas injection holes enable the sealing gas to be distributed into the hollow center of the support sleeve, thereby forming a diffusion barrier together with the processing container. The elements of the support sleeve of the present invention that can generate a diffusion barrier are described in more detail below.

[0044] According to an example of the present disclosure, the support sleeve 102 includes a gas inlet port 120 (see Figure 3 and Figure 4)。In such an example, the gas inlet port 120 extends outwardly (i.e., away from the center of the support sleeve) from the outer surface 206 of the support sleeve. The gas inlet port 120 includes a gas inlet channel 302 disposed therein, as Figure 3 indicated by the short dashed line in, to indicate that the gas inlet channel 302 is within the volume of the core of the support sleeve 102. In some embodiments, the gas inlet channel 302 is in fluid communication with a circumferential channel disposed within the support sleeve, as described in more detail below. The gas inlet port 120 is configured to introduce one or more sealing gases into the support sleeve 102. In some embodiments, the support sleeve 102 further includes an exhaust port 304, which includes an exhaust channel 306 for exhausting gas from the support sleeve.

[0045] According to an example of the present disclosure, the support sleeve 102 includes a circumferential channel 218 disposed together with the support sleeve 102 (see Figure 3 and Figure 4 ). In such an embodiment, the circumferential channel 218 is in fluid communication with the gas inlet channel 302 of the gas inlet port 120, such that a sealing gas can be introduced from an external source (not shown) through the gas inlet channel 302 and subsequently enter the circumferential channel 218. The circumferential channel 218 extends radially inwardly around the interior of the support sleeve so that the sealing gas can be evenly distributed around the support sleeve.

[0046] According to an example of the present disclosure, the circumferential channel 218 is formed within the hollow cylindrical core of the support sleeve 102, as Figure 3 indicated by the dashed line in, to indicate that the circumferential channel 218 is within the volume of the core of the support sleeve 102, and as Figure 4 shown in the cross-sectional view of. In some embodiments, the circumferential channel 218 is disposed between the outer surface 206 and the inner surface 204. In such an example, the circumferential channel 218 can be disposed between the outer surface 206 and the shoulder side surface 216. In some embodiments, the circumferential channel 218 is disposed between the bottom surface 210 of the support sleeve and the intermediate surface 214 of the shoulder 212.

[0047] According to an example of the present disclosure, the circumferential channel 218 has a generally rectangular profile, as Figure 5 shown by the channel profile 502 in. In such an embodiment, the circumferential channel 218 has a channel width between 5 mm and 20 mm and a channel height between 10 mm and 30 mm. The circumferential channel 218 is not limited to a rectangular profile, for example, the channel profile can be a square profile or a circular profile.

[0048] According to an example of the present disclosure, the support sleeve 102 further includes a plurality of supply channels 220 disposed within the support sleeve 102. In such an embodiment, the plurality of supply channels 220 are in fluid communication with the circumferential channel 218 such that sealing gas can be introduced from an external source (not shown) through the gas inlet channel 302 into the circumferential channel 218 and subsequently into the plurality of supply channels 220.

[0049] According to an example of the present disclosure, the plurality of supply channels 220 are formed within the hollow cylindrical core of the support sleeve 102, as Figure 2 indicated by the dashed lines, to indicate that the plurality of supply channels 220 are within the volume of the core of the support sleeve 102, and as Figure 4 shown in the cross-sectional view. In some embodiments, the plurality of supply channels 220 are disposed between the outer surface 206 and the inner surface 204. In some embodiments, the plurality of supply channels 220 are oriented perpendicular to the top surface 208 of the support sleeve 102. In some embodiments, the supply channels 220 are oriented parallel to the outer surface 206 and the inner surface 204 of the support sleeve 102. In such an embodiment, the supply channels 220 are vertical supply channels. In some embodiments, the plurality of supply channels 220 are radially distributed equidistantly and in a spaced-apart relationship around the inner surface 204 within the hollow cylindrical core of the support sleeve. In some embodiments, the supply channels 220 have a circular profile. In such an embodiment, the diameter of the plurality of supply channels 220 is between 2 mm and 5 mm. In some embodiments, the length of the supply channels 220 is between 20 mm and 80 mm.

[0050] According to an example of the present disclosure, the support sleeve 102 further includes a plurality of gas injection holes 122 disposed within the support sleeve 102. In such an embodiment, each of the plurality of gas injection holes 122 is in fluid communication with the gas supply channel 220 such that sealing gas can be introduced from an external source (not shown) through the gas inlet channel 302 into the circumferential channel 218, into the supply channel 220, and into the gas injection holes 122. In such an example, each supply channel 220 has a first end in fluid communication with the circumferential channel 218 and a second end in fluid connection with the gas injection hole 122.

[0051] According to an example of the present disclosure, each of the plurality of gas injection holes 122 extends from the supply channel and through the inner surface 204 of the support sleeve 102, such as Figure 4 shown. In other words, the gas injection holes 122 provide a passage for the sealing gas to flow out of the support sleeve through the inner surface of the support sleeve from the supply channel.

[0052] According to an example of the present disclosure, the plurality of gas injection holes 122 are formed within the hollow cylindrical core of the support sleeve 102, as Figure 4 andFigure 5 As shown. In some embodiments, the gas injection holes 122 are provided between the outer surface 206 and the inner surface 204. In some embodiments, the gas injection holes 122 are oriented parallel to the top surface 208 of the support sleeve 102. In some embodiments, the gas injection holes 122 are oriented perpendicular to the outer surface 206 and the inner surface 204 of the support sleeve 102. In such embodiments, the gas injection holes are horizontal gas injection holes. In some embodiments, a plurality of gas injection holes 122 are equally spaced apart and are distributed radially around the inner surface 204 of the support sleeve 102 in a spaced-apart relationship. In some embodiments, the plurality of gas injection holes 122 have a circular profile. In such embodiments, the diameter of the gas injection holes 122 is between 1 mm and 3 mm.

[0053] Embodiments of the present disclosure also include a semiconductor processing furnace that includes a support sleeve as described in detail above. To better illustrate the embodiments of the present disclosure related to the semiconductor processing furnace and the configuration of the processing container related to the support sleeve, Figure 6 An enlarged cross-sectional view of the processing container 104 supported on the support sleeve 102 is shown.

[0054] According to an example of the present disclosure and with reference to Figure 6 , the processing container 104 includes a flange 116 that protrudes from the outer surface 118 of the processing container 104. In such an example, the lower side 602 of the flange 116 contacts the top surface 208 of the support sleeve 102. In some embodiments, the top surface 208 of the support sleeve includes an annular top surface, and the lower side 602 of the flange 116 includes an annular surface. In some embodiments, the processing container 104 is supported by a single surface of the support sleeve 102, i.e., a single support surface. In such an example, the single support surface includes the top surface 208 of the support sleeve 102. In such an example, the single support surface supports the processing container 104 on the lower side 602 of the flange 116 that protrudes from the outer surface 118 of the processing container 104. In such an example, the processing container 104 is not supported by any additional surfaces of the support sleeve 102.

[0055] According to an additional example of the present disclosure and with reference to Figure 6 , the processing container 104 includes a base surface 604. In such an example, the base surface 604 includes the bottom or lowest portion of the processing container 104. As Figure 6 shown, the base surface 604 of the processing container 104 is not supported by the support sleeve 102. Instead, the base surface 604 is separated from the intermediate surface 214 of the support sleeve 102 by a predetermined distance, for example, a vertical gap is maintained between the base surface 604 and the intermediate surface 214.

[0056] More specifically, with reference to Figure 6, Sealing gas can be introduced into the support sleeve 102 and radially distributed around the support sleeve 102 through the circumferential channel 218. A plurality of supply channels 220 direct the barrier gas from the circumferential channel 218 to the plurality of gas injection holes 122 so that the sealing gas can flow out of the interior of the support sleeve 102. According to a further example of the present disclosure, a diffusion barrier channel can be formed between the support sleeve 102 and the processing container 104 supported thereon. In such an example, a first portion of the diffusion barrier channel 606 includes a channel formed between the inner surface 204 of the support sleeve 102 and the outer surface 118 of the processing container 104. Additionally, in such an example, a second portion of the diffusion barrier channel 608 includes a channel formed between the base surface 604 of the processing container 104 and the intermediate surface 214 of the support sleeve 102. The first portion of the diffusion barrier channel 606 and the second portion of the diffusion barrier channel 608 are in fluid communication with the plurality of gas injection holes 122 (and also in fluid communication with the plurality of supply channels 220, the circumferential channel 218, and the gas inlet channel 302). Thus, sealing gas can be introduced into the support sleeve and injected from the support sleeve 102 through the plurality of gas injection holes 122 into the diffusion barrier channel including the first portion of the diffusion barrier channel 606 and the second portion of the diffusion barrier channel 608. According to an example of the present disclosure, the first portion of the diffusion barrier channel has a channel width between 1 mm and 5 mm. According to a further example of the present disclosure, the second portion 608 of the diffusion barrier channel has a channel width between 1 mm and 5 mm.

[0057] To summarize the invention and the advantages achieved over the prior art, certain objects and advantages of the invention have been described above. Of course, it should be understood that not all of these objects or advantages may be achieved in accordance with any particular embodiment of the invention. Thus, for example, those skilled in the art will recognize that the invention can be embodied or carried out in a manner that achieves or optimizes one advantage or a group of advantages taught or suggested herein without necessarily achieving other objects or advantages taught or suggested herein.

[0058] All such embodiments are within the scope of the invention disclosed herein. From the following detailed description of certain embodiments with reference to the accompanying drawings, these and other embodiments will become apparent to those skilled in the art, and the invention is not limited to any particular embodiment disclosed.

Claims

1. A support sleeve for supporting a processing container, the support sleeve comprising a flange protruding from an outer surface of the processing container and a base surface for sealing the processing container in a semiconductor processing furnace, the support sleeve comprising: Internal and external surfaces; a top surface constructed and arranged to engage and support the processing vessel at the flange; bottom surface; as well as A shoulder includes an intermediate surface disposed between the top surface and the bottom surface, the intermediate surface extending from the interior surface and constructed and arranged to form a portion of a diffusion barrier channel between the intermediate surface of the shoulder and a base surface of the processing vessel.

2. The support sleeve according to claim 1, wherein: The support sleeve is made from a single piece of material.

3. The support sleeve according to claim 2, wherein: The top surface is an annular top surface extending between an exterior surface of the support sleeve and an interior surface of the support sleeve.

4. The support sleeve according to claim 3, wherein: The shoulder includes an annular shoulder.

5. The support sleeve according to claim 4, wherein: The intermediate surface includes an annular surface.

6. The support sleeve of claim 1, further comprising a circumferential channel disposed within the support sleeve and in fluid communication with the gas inlet channel.

7. The support sleeve of claim 6, further comprising a plurality of supply channels disposed within the support sleeve, each supply channel having a first end in fluid communication with the circumferential channel and a second end in fluid communication with the gas injection hole.

8. The support sleeve according to claim 7, wherein: Each of the gas injection holes extends from the second end of the supply passage through the inner surface of the support sleeve.

9. A support sleeve for supporting a processing container, comprising: a hollow cylindrical core including an exterior surface, an interior surface, a bottom surface, and an annular top surface extending between the exterior surface and the interior surface, the annular top surface being constructed and arranged as a single support surface to support the processing vessel during operation; an annular shoulder extending inwardly from a lower portion of the interior surface, the annular shoulder having an intermediate surface constructed and arranged to form a portion of a diffusion barrier passage between the intermediate surface of the annular shoulder and a base surface of the processing vessel when supported on the annular top surface; a circumferential passage disposed within the support sleeve and in fluid communication with a gas inlet port extending outwardly from the exterior surface; as well as A plurality of supply passages are disposed within the hollow cylindrical core, each supply passage having a first end in fluid communication with the circumferential passage and a second end in fluid communication with the gas injection hole, wherein each gas injection hole extends from the second end of the supply passage through the interior surface of the single-piece support sleeve.

10. A semiconductor processing furnace, comprising: a support sleeve including an inner surface, an outer surface, a top surface, a bottom surface, and an intermediate surface disposed between the top surface and the bottom surface, the intermediate surface extending inwardly from the inner surface of the support sleeve; A processing container covering a support sleeve, the processing container comprising a base surface and a flange protruding from an outer surface of the processing container, wherein a lower side of the flange contacts a top surface of the support sleeve, and the base surface of the processing container and an intermediate surface of the support sleeve define a portion of a diffusion barrier channel for hermetically isolating the support sleeve from the processing container.

11. The semiconductor processing furnace according to claim 10, wherein: The support sleeve has a hollow cylindrical core.

12. The semiconductor processing furnace according to claim 11, wherein: The top surface is an annular top surface.

13. The semiconductor processing furnace according to claim 12, wherein: The intermediate surface is the upper surface of the annular shoulder.

14. The semiconductor processing furnace according to claim 13, wherein: The middle surface of the support sleeve is a single support surface for supporting a processing vessel thereon.

15. The semiconductor processing furnace of claim 10, further comprising a circumferential passage disposed within the support sleeve and in fluid communication with the gas inlet passage.

16. The semiconductor processing furnace of claim 15, further comprising a plurality of supply passages disposed within the support sleeve, each supply passage having a first end in fluid communication with the circumferential passage and a second end in fluid communication with the gas injection hole.

17. The semiconductor processing furnace according to claim 16, wherein: Each of the gas injection holes extends from the second end of the supply passage through the inner surface of the support sleeve.

18. The semiconductor processing furnace according to claim 10, wherein: The first portion of the diffusion barrier passage includes a passage formed between an interior surface of the support sleeve and an exterior surface of the process vessel.

19. The semiconductor processing furnace according to claim 10, wherein: The second portion of the diffusion barrier passage includes a passage formed between a substrate surface of the processing vessel and an intermediate surface of the support sleeve.

20. The semiconductor processing furnace according to claim 10, wherein: The support sleeve is made from a single piece of material.

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