Wafer warping real-time monitoring device, monitoring method and equipment

Abstract

The invention provides a wafer warpage real-time monitoring device, monitoring method and equipment, and the device comprises a detection assembly which is disposed on an adsorption surface of an electrostatic chuck and is staggered with an ejector pin and an air hole on the electrostatic chuck, and the detection assembly is used for detecting the strain of a wafer adsorbed on the adsorption surface in real time, and then analyzing the warpage change condition of the wafer. According to the invention, the detection assembly is arranged on the electrostatic chuck, and the detection assembly can detect the strain of the wafer adsorbed on the adsorption surface in real time in the technological process, so that the warping change condition of the wafer is obtained through analysis. Compared with off-line detection, real-time detection can reduce errors caused by time delay and stress release. The process parameter adjustment based on the wafer warping data monitored in real time is more accurate and effective. Therefore, the real-time monitoring mode not only improves the accuracy and reliability of wafer warping detection, but also can directly guide the adjustment of process parameters, optimize the process and improve the quality and yield of products.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor equipment technology, and in particular to a real-time monitoring device, monitoring method and equipment for wafer warpage. Background Art

[0002] As we all know, a conventional chip is a three-dimensional circuit formed by vertically stacking many layers on a silicon substrate, which can realize its designed functions after power is turned on. Among them, the materials involved are countless, including metal materials, dielectric materials, and organic polymer materials such as photoresist. Even if there are only one or two materials, there are differences in the thermal expansion coefficients between the materials, and thermal mismatch stress will cause wafers with complex patterns and layouts to deform unevenly during or after the process, thereby affecting the next process. The copper filling (Cu) process realizes electrical connection between chip layers by opening vertical through holes in the silicon wafer and filling them with copper materials. Heat treatment after filling Cu in through silicon via (TSV) will cause a significant change in the wafer's bow value. Bow value usually refers to the curvature of the wafer surface or the curvature or fluctuation, and is also a measure of the height difference between the center and edge of the wafer. If the incoming wafer has significant warpage, during the photolithography process, the spin coating of photoresist (PR) must be coordinated to compensate for the warpage value of the center and edge of the wafer, otherwise the development will be severely defocused. Later, during the etching (ET) process, wafer warpage may cause clamping failure or arcing during the de-clamping process.

[0003] In the existing technology, a THK machine, namely an ellipsometer, is used to obtain the warpage value of the wafer by detecting the film thickness. However, it is an offline test and is not friendly to the stress release deformation of the material in the wafer after processing. This will cause a certain deviation between the measured value and the actual value. There is an urgent need for a method that can monitor the warpage status of the wafer in real time. Summary of the invention

[0004] The purpose of the present invention is to provide a real-time monitoring device, method and equipment for wafer warpage, so as to improve the problem that the existing wafer warpage can only be measured offline and the measurement results are biased.

[0005] The present invention provides a wafer warpage real-time monitoring device, comprising: The detection component is arranged on the adsorption surface of the electrostatic chuck and is staggered with the ejector pins and air holes on the electrostatic chuck. The detection component is used to detect the strain of the wafer adsorbed on the adsorption surface in real time, and then analyze the warping change of the wafer.

[0006] The beneficial effect of the real-time wafer warpage monitoring device provided by the present invention is as follows: by arranging the detection component on the electrostatic chuck, the detection component can detect the strain of the wafer adsorbed on the adsorption surface in real time during the process, and then the warpage change of the wafer can be analyzed and obtained.

[0007] In a possible embodiment, the detection component includes a strain component. During the process, the strain component is always in contact with the wafer and detects the strain of the wafer in real time.

[0008] In a possible embodiment, the strain component is also used to convert the detected strain of the wafer into a resistance value.

[0009] In a possible embodiment, the strain component includes a plurality of strain detection units arranged at intervals on the adsorption surface; The distribution range of the strain detection units covers the entire adsorption surface; alternatively, the strain detection units are distributed in a set detection area on the adsorption surface.

[0010] The beneficial effect is as follows: through the strain detection units distributed on the entire adsorption surface, the entire wafer surface can be fully detected to ensure obtaining the overall warpage situation of the wafer. Alternatively, the strain detection units are arranged in a set detection area on the adsorption surface to perform targeted detection on the areas of the wafer prone to warpage. While ensuring wafer warpage detection, the number of strain detection units can be reduced, and the cost can be lowered.

[0011] In a possible embodiment, the real-time wafer warpage monitoring device further includes: A feedback adjustment module, connected to the detection component and the process control system, and used to feedback and adjust the setting of process parameters in the process control system according to the strain situation of the wafer, so as to perform real-time adjustment on the warpage state of the wafer and the uniformity of the critical dimensions and thickness of the wafer within the entire wafer range during the process.

[0012] The beneficial effect is as follows: the feedback adjustment module feedbacks and adjusts the setting of process parameters in the process control system according to the strain situation of the wafer, so as to perform real-time adjustment on the warpage state of the wafer and the uniformity of the critical dimensions and thickness of the wafer within the entire wafer range during the process, thereby optimizing the warpage state of the wafer.

[0013] In a possible embodiment, the process control system includes a mass flow control system for measuring and controlling the flow rate of process gas; and / or, The process control system includes a temperature control system for monitoring and controlling the process temperature.

[0014] The beneficial effects are as follows: The feedback adjustment module can feedback and adjust the flow rate and process temperature of the process gas according to the strain condition of the wafer, so as to realize real-time adjustment of the warping state of the wafer, the key dimensions of the wafer, and the uniformity of the thickness within the entire wafer range during the process.

[0015] In a possible embodiment, the wafer warping real-time monitoring device further includes: A data acquisition module, connected to the detection component and used to receive, store, and output the detection signal of the detection component in real time; A host computer, connected to the data acquisition module and used to receive and analyze the detection signal to obtain the warping change situation of the wafer.

[0016] The beneficial effects are as follows: By cooperating with the data acquisition module and the host computer, the warping change situation of the wafer can be intelligently analyzed.

[0017] In a possible embodiment, the host computer includes: A data processing module, used to receive and analyze the detection signal to obtain wafer warping data, where the wafer warping data includes the warping degree, warping direction, and warping distribution range of the wafer; A fitting imaging module, used to perform image fitting according to the wafer warping data to obtain the warping map of the wafer.

[0018] The beneficial effects are as follows: The data processing module analyzes and processes the detection signal to obtain wafer warping data related to the wafer warping. The fitting imaging module uses image fitting technology to fit an image that can reflect the wafer warping state according to the wafer warping data.

[0019] In a possible embodiment, the host computer further includes a display, and the display is used to display the warping map of the wafer in real time during the process.

[0020] The beneficial effects are as follows: By the display, the warping map of the wafer is displayed in real time during the process to provide a more intuitive display for engineers to observe and analyze in real time during the process.

[0021] In a possible embodiment, the detection component is embedded on the adsorption surface, and the surface of the detection component is flush with the adsorption surface.

[0022] The beneficial effects are as follows: By embedding the detection component on the adsorption surface, it is ensured that when the electrostatic chuck adsorbs the wafer, the wafer can be tightly and flatly attached to the adsorption surface, avoiding affecting the adsorption effect of the wafer.

[0023] The present invention also provides a semiconductor device, including: a real-time wafer warpage monitoring device as described in any one of the above embodiments.

[0024] The present invention also provides a real-time wafer warpage monitoring method, which adopts the real-time wafer warpage monitoring device as described in any one of the above embodiments. The monitoring method includes: Flatten the wafer on the adsorption surface of the electrostatic chuck through the electrostatic adsorption force of the electrostatic chuck; The strain of the wafer is detected in real time through the detection component arranged on the electrostatic chuck, and then the warpage change situation of the wafer can be analyzed.

[0025] In a possible embodiment, the detection component includes a strain component; During the process, the strain component is always in contact with the wafer and detects the strain of the wafer in real time. Description of the Drawings

[0026] Figure 1 It is a schematic diagram of the real-time wafer warpage monitoring device of the present invention in one embodiment.

[0027] Figure 2 It is a schematic diagram of the real-time wafer warpage monitoring device of the present invention in another embodiment.

[0028] Figure 3 It is a perspective view of the real-time wafer warpage monitoring device of the present invention.

[0029] Figure 4 It is a sectional view of the lead laying position of the real-time wafer warpage monitoring device of the present invention.

[0030] Figure 5 It is a logic block diagram of the real-time wafer warpage monitoring device of the present invention in one embodiment.

[0031] Figure 6 It is a logic block diagram of the real-time wafer warpage monitoring device of the present invention in another embodiment.

[0032] Figure 7 It is a flowchart of the real-time wafer warpage monitoring method of the present invention.

[0033] Description of the reference numerals: 110, detection component; 111, strain detection unit; 112, lead; 120, data acquisition module; 130, host computer; 131, data processing module; 132, fitting imaging module; 133, display; 140, feedback adjustment module; 210, electrostatic chuck; 211, adsorption surface; 212, ejector pin; 300, wafer. Detailed Description of the Embodiments

[0034] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0035] In the semiconductor process, the wafer will be subjected to various stresses during the processing, such as temperature stress, mechanical stress, etc. These stresses will gradually release, causing the wafer to deform. In the prior art, wafers are usually detected by ellipsometers, and it is necessary to perform warpage detection on the wafer after the wafer processing is completed. This is an offline detection method. Due to the existence of stress release deformation, there will be a certain deviation between the offline measured wafer warpage value and the actual value, which makes it impossible to accurately and effectively guide the process end to adjust the process parameters according to the wafer warpage.

[0036] In view of the problems existing in the prior art, an embodiment of the present invention provides a real-time monitoring device for wafer warpage. Figure 1 , Figure 2 as well as Figure 4 The monitoring device includes a detection component 110 disposed on the adsorption surface 211 of the electrostatic chuck 210. The detection component 110 is staggered with the ejector pins 212 and the air holes on the electrostatic chuck 210. The detection component 110 is used to detect the strain of the wafer 300 adsorbed on the adsorption surface 211 in real time, and then analyze the warpage change of the wafer 300.

[0037] In this embodiment, a technical solution for real-time monitoring of the warpage state of the wafer 300 is proposed. By modifying the electrostatic chuck 210 in the existing semiconductor equipment, a detection component 110 is arranged on the adsorption surface 211 of the electrostatic chuck 210. Under the electrostatic adsorption action of the electrostatic chuck 210, the wafer 300 is adsorbed on the adsorption surface 211 of the electrostatic chuck 210. Before and during the process of processing the wafer 300, since the wafer 300 is always adsorbed on the adsorption surface 211, that is, the detection component 110 can always be in contact with the wafer 300, the detection component 110 can detect the deformation of the wafer 300 caused by stress changes in real time before and during the process of processing. This real-time performance can more accurately obtain the change of the warpage state of the wafer 300 during the processing. Compared with off-line detection, real-time detection can reduce the errors caused by time delay and stress release. Adjusting the process parameters based on the real-time monitored warpage data of the wafer 300 will be more accurate and effective. Therefore, the real-time monitoring method provided by the present invention not only improves the accuracy and reliability of the warpage detection of the wafer 300, but also can directly guide the adjustment of the process parameters, optimize the process, and improve the quality and yield of the product.

[0038] Although some current electrostatic chucks 210 use pressure sensors for detection, the pressure sensors can only detect the pressure of the wafer 300 and cannot detect the strain of the wafer 300. Strain refers to the local relative deformation of an object under the action of factors such as external force and non-uniform temperature field. In this solution, by detecting the strain of the wafer 300 in real time, the strain of the local area of the wafer 300 at the current moment can be obtained in real time. The strain at the current moment can be understood as the difference between the shape at a certain moment and the shape at the previous moment. From this, the warpage change of the wafer 300 can be obtained.

[0039] The ejector pins 212 on the electrostatic chuck 210 play a role in supporting the wafer 300 and adjusting the lifting of the wafer 300. When the wafer 300 needs to be placed on the electrostatic chuck 210, by raising the ejector pins 212, the ejector pins 212 extend out of the ejector pin holes on the electrostatic chuck 210, and the wafer 300 is placed on several ejector pins 212 to support the wafer 300 through the ejector pins 212. Then, by lowering the ejector pins 212, the ejector pins 212 are retracted into the ejector pin holes, so as to realize placing the wafer 300 on the adsorption surface 211 of the electrostatic chuck 210. Under the electrostatic adsorption action of the electrostatic chuck 210, the wafer 300 is adsorbed on the adsorption surface 211. In this embodiment, the detection component 110 is installed avoiding the position of the ejector pins 212, ensuring that the ejector pins 212 will not be hindered during the rising and falling processes, so as to avoid affecting the realization of the original functions of the ejector pins 212.

[0040] The air holes on the electrostatic chuck 210 are used for helium gas to flow through. In this embodiment, the detection component 110 is installed at a position avoiding the air holes, so as to avoid affecting the flow of helium gas, and further avoid affecting the distribution of helium gas on the back surface of the wafer 300. Helium gas has high thermal conductivity and can quickly transfer heat to control the temperature of the wafer 300 during the process.

[0041] In one embodiment, referring to Figure 2 , the detection component 110 includes a strain component. During the process, the strain component is always in contact with the wafer 300 and performs strain detection on the wafer 300 in real time. The strain component is always in contact with the wafer 300 to realize real-time monitoring of the strain of the wafer 300 during the process, so as to obtain the current warping condition of the wafer 300 in real time, so as to facilitate taking adjustment measures in time.

[0042] In one embodiment, the strain component is also used to convert the detected strain of the wafer 300 into a resistance value. By analyzing and processing the resistance value output by the strain component, the warping change condition of the corresponding area on the surface of the wafer 300 can be obtained.

[0043] In one embodiment, referring to Figure 1 、 Figure 2 and Figure 3 , the detection component 110 is embedded in the adsorption surface 211, and the surface of the detection component 110 is flush with the adsorption surface 211.

[0044] Uneven contact will increase the friction and collision between the wafer 300 and the adsorption surface 211, thus increasing the risk of scratches and damage on the surface of the wafer 300. The design that the detection component 110 is flush with the adsorption surface 211 enables the wafer 300 to fit more closely to the electrostatic chuck 210 when adsorbed. This close fit helps to enhance the adsorption force of the electrostatic chuck 210 on the wafer 300, ensuring that the wafer 300 will not shift during the processing and can effectively protect the wafer 300.

[0045] In some embodiments, referring to Figure 1 、 Figure 2 and Figure 3 , the strain component includes a plurality of strain detection units 111 spacedly arranged on the adsorption surface 211, such as strain gauges in one implementation manner. The distribution range of the strain detection units 111 covers the entire adsorption surface 211; alternatively, the strain detection units 111 are distributed in a set detection area on the adsorption surface 211.

[0046] In one design, the distribution range of the strain detection units 111 covers the entire adsorption surface 211, enabling warpage detection of the entire surface of the wafer 300. Each strain detection unit 111 can independently provide the deformation data of the wafer 300 at the position in contact with the wafer 300, so as to obtain the overall warpage condition of the wafer 300, providing an accurate basis for process adjustment and ensuring the comprehensiveness and accuracy of the detection. In another design, during the manufacturing process of the wafer 300, due to the influence of various factors such as thermal stress and mechanical stress, warpage is likely to occur in certain specific areas. By arranging the strain detection units 111 in these set detection areas, targeted detection can be carried out on the areas of the wafer 300 prone to warpage. By reasonably selecting the detection areas, effective monitoring of the wafer warpage can be achieved, and at the same time, the number of strain detection units 111 used can be reduced, and the cost can be lowered.

[0047] In a specific embodiment, referring to Figure 1 , Figure 2 and Figure 3 , a number of grooves are provided on the adsorption surface 211 at intervals. The grooves are arranged in one-to-one correspondence with the strain detection units 111. The strain detection units 111 are arranged in the corresponding grooves, and the surface of the strain detection units 111 is flush with the adsorption surface 211.

[0048] The multi-point distributed setting of the strain detection units 111 can, on the one hand, ensure the comprehensiveness and accuracy of the detection; on the other hand, only very small grooves need to be opened. The opening of the small grooves is relatively simple, with less modification required, and there is no need for large-scale modification or re-design of the electrostatic chuck 210, resulting in less damage to the electrostatic chuck 210.

[0049] In a specific embodiment, referring to Figure 3 , the strain detection units 111 are in several groups. The several groups of strain detection units 111 are distributed at intervals along the radial direction of the adsorption surface 211, and each group of strain detection units 111 is arranged in a circular array with the center of the adsorption surface 211 as the center of the circle.

[0050] The multi-group and circular array distribution mode of the strain detection units 111 ensures the uniformity and comprehensive coverage of the distribution of the detection points, thus ensuring the comprehensiveness of the monitoring, reducing the monitoring blind area, and improving the reliability of the monitoring.

[0051] In an embodiment, referring to Figure 2 and Figure 5, the monitoring device further includes a feedback adjustment module 140 connected to the detection component 110 and the process control system. The feedback adjustment module 140 is used to feedback and adjust the setting of process parameters in the process control system according to the strain condition of the wafer 300, so as to perform real-time adjustment on the warping state of the wafer 300, as well as the uniformity of the critical dimensions and thickness of the wafer 300 within the entire wafer 300 range during the process.

[0052] The feedback adjustment module 140 can quickly respond in real time according to the strain condition of the wafer 300 to dynamically adjust the setting of process parameters in the process control system, avoid further exacerbation of the warping of the wafer 300, and ensure the flatness of the wafer 300. By dynamically adjusting the process parameters, the uniformity of the critical dimensions and thickness of the wafer 300 within the entire wafer 300 range can also be improved. This real-time monitoring and feedback adjustment mechanism makes the process more controllable and stable. By real-time monitoring and precisely adjusting the process parameters, the warping state of the wafer 300 and the uniformity of the critical dimensions and thickness can be accurately controlled, improving the production quality of the wafer 300 and the yield of the product.

[0053] In one embodiment, the process control system includes a mass flow control system for measuring and controlling the flow rate of process gas, and the process gas, for example, etching gas.

[0054] Taking the etching gas as an example for explanation, the flow rate of the etching gas directly affects the etching rate and uniformity. For example, if the feedback adjustment module 140 analyzes that the warping of a certain area on the wafer 300 is caused by uneven etching, the feedback adjustment module 140 adjusts the flow rate setting of the etching gas on the surface of the wafer 300 in this area through the feedback adjustment of the process control system to change the etching rate in this area and avoid further warping of the surface of the wafer 300 in this area. By adjusting the distribution of the etching gas on the surface of the wafer 300 through the feedback adjustment mechanism, the warping caused by uneven etching is reduced, ensuring a smoother surface of the wafer 300.

[0055] In one embodiment, the process control system includes a temperature control system for monitoring and controlling the process temperature.

[0056] The process temperature is one of the main factors affecting the thermal expansion state of the wafer 300. When the wafer 300 is heated, the materials on it will expand; while when the wafer 300 is cooled, the materials will contract. Since the thermal expansion coefficients of different materials on the wafer 300 may be different, uneven thermal expansion or contraction may occur during the heating or cooling process, resulting in the generation of thermal stress. By adjusting the process temperature, the thermal expansion state of different regions on the wafer 300 can be changed, thereby optimizing the distribution of thermal stress. If the feedback adjustment module 140 analyzes that the warping of a certain area on the wafer 300 is caused by excessive thermal stress, the feedback adjustment module 140 can reduce the generation of thermal stress by lowering the process temperature setting in this area of the process control system, which helps to inhibit the further warping of the wafer 300.

[0057] In another embodiment, referring to Figure 2 and Figure 6 the monitoring device further includes a data acquisition module 120 and a host computer 130. The data acquisition module 120 is connected to the detection component 110 and is used to receive, store, and output the detection signals of the detection component 110 in real time. The host computer 130 is connected to the data acquisition module 120 and the feedback adjustment module 140. The host computer 130 is used to receive and analyze the detection signals to obtain the change situation of the warping state of the wafer 300, and transmit the warping situation of the wafer 300 to the feedback adjustment module 140 in real time.

[0058] Furthermore, referring to Figure 4 and Figure 5 the detection component 110 is connected to the data acquisition module 120 through a lead 112. The host computer 130 can be a computer or a console, etc.

[0059] The data acquisition module 120 can collect the detection signals sent by the detection component 110 in real time, ensuring that the changes in the warping of the wafer 300 can be captured immediately. The data acquisition module 120 can also store these data for subsequent data analysis and process optimization. The host computer 130 can integrate advanced algorithms and models to intelligently analyze the warping changes of the wafer 300, so as to obtain the current warping state of the wafer 300 in real time during the process.

[0060] In one embodiment, referring to Figure 2 and Figure 6, the host computer 130 includes a data processing module 131 connected to the data acquisition module 120 and a fitting imaging module 132 connected to the feedback adjustment module 140. The data processing module 131 is configured to receive and analyze the detection signal to obtain the warpage data of the wafer 300. The warpage data of the wafer 300 includes the warpage degree, warpage direction, and warpage distribution range of the wafer 300. The fitting imaging module 132 is configured to perform image fitting based on the warpage data of the wafer 300 to obtain the warpage map of the wafer 300, and send the warpage map of the wafer 300 generated in real time to the feedback adjustment module 140.

[0061] The data processing module 131 is built - in with an analysis algorithm, which can accurately analyze the key data of the warpage of the wafer 300 from the detection signal of the detection component 110. For example, the warpage degree, warpage direction, and warpage distribution range of the wafer 300, etc. The fitting imaging module 132 establishes a three - dimensional mechanical model according to the warpage data of the wafer 300, and through algorithms such as the least - squares method and curve fitting, uses the three - dimensional mechanical model to perform image fitting on the warpage situation of the wafer 300, so as to obtain a visual warpage image of the wafer 300 to clearly display the warpage form of the wafer 300.

[0062] In a specific embodiment, refer to Figure 2 and Figure 6 , the data acquisition module 120 is also used to store the warpage change situation of the wafer 300.

[0063] In a specific embodiment, refer to Figure 2 and Figure 6 , the host computer 130 further includes a display 133. The display 133 is used to display the warpage map of the wafer 300 in real time during the process.

[0064] The display 133 can display the warpage map of the wafer 300 in real time during the process. Through the warpage map on the display 133, the process personnel can intuitively see the position, shape, and degree of the warpage of the wafer 300. This intuitive display method is easier to understand and analyze than simple data or text descriptions, which helps the process personnel to find problems faster. The process personnel can quickly see the change of the warpage state of the wafer 300 during the processing to ensure that they can quickly respond when problems occur, adjust the process parameters or take other measures to avoid the further deterioration of problems such as the warpage of the wafer 300.

[0065] The following takes the strain detection unit as an example to explain in detail the detection process and detection principle of the monitoring device of the present invention.

[0066] Detection process: The wafer 300 is sent to the adsorption surface 211 of the electrostatic chuck 210 by the thimble 212. Before the process, the wafer 300 is flattened by the electrostatic adsorption force of the electrostatic chuck 210. During the process, the bottom surface of the wafer 300 is always in contact with the strain detection unit 111 on the adsorption surface 211 of the electrostatic chuck 210. The deformation of the wafer 300 is transmitted to the strain detection unit 111, and the strain detection unit 111 outputs a detection signal containing resistance value information and feeds back the detection signal to the data acquisition module 120 in real time. The data acquisition module 120 outputs the detection signal to the host computer 130 in real time, and the host computer 130 obtains the warpage change of the wafer 300 through real-time data processing. The feedback adjustment module 140 adjusts the setting of the process parameters in the process control system according to the warpage change of the wafer 300, so as to adjust the warpage state of the wafer 300, the key dimensions of the wafer 300, and the uniformity of the thickness within the entire wafer 300 in real time during the process, ensuring the flatness and quality of the wafer 300 during processing.

[0067] Detection principle: Under the edge rounding technology, the silicon wafer 300 has elastoplasticity. When the warped wafer 300 is forced to be flattened by the electrostatic chuck 210, the wafer 300 undergoes plastic deformation, that is, a certain strain is generated parallel to the surface of the electrostatic chuck 210. The detection points containing the strain detection unit 111 are distributed on the adsorption surface 211 of the electrostatic chuck 210 and are in direct contact with the bottom surface of the wafer 300. The deformation of the wafer 300 is reflected in the resistance value of the strain detection unit 111, and its stable value can be set as the initial value. Since the measurement object of the strain detection unit 111 is only the deformation amount of the area it covers, by processing the data output by all the strain detection units 111, the initial warpage map of the entire wafer 300 can be obtained. During the process, the electrostatic adsorption force of the electrostatic chuck 210 remains unchanged, while the wafer 300 will undergo further deformation due to the generation and release of internal stress during the process. These deformations will be captured by the strain detection unit 111 and converted into changes in resistance values. In particular, the positions on the wafer 300 with larger original warpage amounts will generate larger strain values when being forced to be flat. If the stress at these positions is released during the process, the strain values will decrease accordingly. The positions on the wafer 300 with larger warpage amounts have larger strain values due to being forced to be flattened. If the stress at these positions is released during the process, the strain values at these positions will become smaller accordingly. By processing and analyzing the data output by all the strain detection units 111 in real time, the change in the warpage state of the wafer 300 during the process can be reflected in real time, achieving the purpose of real-time monitoring.

[0068] The present invention also provides a semiconductor device, including: the monitoring device according to any one of the above embodiments.

[0069] The present invention also provides a method for real-time monitoring of wafer warpage, which uses the wafer warpage real-time monitoring device in any of the above embodiments. Refer to Figure 7 , and the monitoring method includes: S701: The wafer 300 is flattened on the adsorption surface 211 of the electrostatic chuck 210 by the electrostatic adsorption force of the electrostatic chuck 210; S702: The strain of the wafer 300 is detected in real time by the detection component 110 provided on the electrostatic chuck 210, and then the warpage change of the wafer 300 can be analyzed.

[0070] In one embodiment, the detection component 110 includes a strain component, and during the process, the strain component is always in contact with the wafer 300 and detects the strain of the wafer 300 in real time.

[0071] In one embodiment, after the strain of the wafer 300 is detected in real time by the detection component 110 provided on the electrostatic chuck 210, it further includes: Receiving, storing, and outputting the detection signal of the detection component 110 in real time through the data acquisition module 120; Receiving and analyzing the detection signal through the host computer 130 to obtain the warpage change of the wafer 300.

[0072] In one embodiment, after receiving and analyzing the detection signal through the host computer 130 to obtain the warpage change of the wafer 300, it further includes: According to the warpage change of the wafer 300, the feedback adjustment module 140 feedback-adjusts the setting of the process parameters in the process control system to perform real-time adjustment on the warpage state of the wafer 300 and the uniformity of the critical dimensions and thickness of the wafer 300 within the entire wafer 300 range.

[0073] In one embodiment, receiving and analyzing the detection signal through the host computer 130 to obtain the warpage change of the wafer 300 includes: Receiving and analyzing the detection signal through the data processing module 131 to obtain the wafer warpage data, and the wafer warpage data includes the warpage degree, warpage direction, and warpage distribution range of the wafer 300; Performing image fitting on the wafer warpage data by the fitting imaging module 132 to obtain the warpage map of the wafer 300.

[0074] In one embodiment, during the process, the warpage map of the wafer 300 is displayed in real time through the display 133 of the host computer 130.

[0075] The following explains the method for real-time monitoring of wafer warpage of the present invention in combination with specific embodiments.

[0076] The wafer 300 is adsorbed and fixed on the electrostatic chuck 210. The strain detection unit 111 detects the wafer 300 and outputs the detection signal to the data acquisition module 120. The data acquisition module 120 stores the initial detection signal and outputs the detection signal to the host computer 130. The data processing module 131 of the host computer 130 receives and analyzes the detection signal to obtain the warpage data of the wafer 300. The image fitting module 132 of the host computer 130 performs image fitting according to the warpage data of the wafer 300 to obtain the initial warpage map of the wafer 300. The image fitting module 132 outputs the initial warpage map of the wafer 300 to the data acquisition module 120, and the data acquisition module 120 stores the initial warpage map of the wafer 300, thus completing the initialization and establishing the initial warpage map of the wafer 300 to be processed.

[0077] During the process, the strain detection unit 111 performs detection at a set frequency. For example, it detects once every 0.1 second, and outputs the real-time detected detection signal to the data acquisition module 120. The data acquisition module 120 stores the detection signals during the process in real time and outputs the detection signals during the process to the host computer 130 in real time. The data processing module 131 of the host computer 130 receives and analyzes the detection signals during the process to obtain the warpage data of the wafer 300 during the process. The image fitting module 132 of the host computer 130 performs image fitting according to the warpage data of the wafer 300 during the process to obtain the warpage map of the wafer 300 during the process. The image fitting module 132 outputs the warpage map of the wafer 300 during the process to the display 133, and the display 133 stores the warpage map of the wafer 300 during the process, thereby realizing the dynamic monitoring of the change of the warpage state of the wafer 300 during the process.

[0078] The technical effects of the monitoring device, monitoring method and equipment of the present invention will be explained in detail below.

[0079] 1. During the process, the detection component 110 is always in contact with the wafer 300, and can detect the deformation of the wafer 300 caused by stress changes in real time before and during the process. This real-time performance can more accurately obtain the change of the warpage state of the wafer 300 during the process, and reduce the errors caused by time delay and stress release.

[0080] 2. Adjusting the process parameters based on the real-time monitored warpage data of the wafer 300 will be more accurate and effective. Real-time monitoring can directly reflect the actual situation of the wafer 300 during the process, making the adjustment of the process parameters more targeted, thereby improving the product quality and yield.

[0081] 3. The detection component 110 and the ejector pins 212 and air holes on the electrostatic chuck 210 are staggered to ensure that the ejector pins 212 will not be hindered in the process of rising and lowering, and avoid affecting the circulation of helium. In this way, the original ejector pin 212 support and lifting function of the electrostatic chuck 210 and the helium heat conduction function will not be disturbed.

[0082] 4. The data acquisition module 120 can collect the detection signals sent by the detection component 110 in real time and store the data, which provides reliable data support for subsequent data analysis and process optimization.

[0083] 5. The feedback adjustment module 140 can receive the warpage change of the wafer 300 from the host computer 130 in real time and respond quickly to dynamically adjust the setting of the process parameters in the process control system. This real-time monitoring and feedback adjustment mechanism makes the process more controllable and stable.

[0084] 6. Through real-time monitoring and feedback adjustment mechanism, the warping state and the uniformity of key dimensions and thickness of the wafer 300 can be accurately controlled, which helps to improve the production quality of the wafer 300 and improve the yield of the product.

[0085] 7. The data processing module 131 can receive and analyze the detection signal to obtain the warpage data of the wafer 300, and the fitting imaging module 132 performs image fitting to obtain a visualized warpage image of the wafer 300. This intuitive display method helps process personnel to find the problem more quickly and take corresponding measures.

[0086] 8. The multi-point distributed arrangement of the strain detection unit 111 only requires the opening of very small grooves, which causes less damage to the electrostatic chuck 210. The opening of small grooves is relatively simple, and the modification is minor, and there is no need for large-scale transformation or redesign of the electrostatic chuck 210.

[0087] 9. The design of the strain detection unit 111 covering the entire adsorption surface 211 realizes the warpage detection of the entire surface of the wafer 300. Each strain detection unit 111 can independently provide deformation data of the wafer 300 at that position, so as to construct the overall warpage map of the wafer 300, providing an accurate basis for process adjustment.

[0088] In the description of the present invention, it should be understood that the terms "including" and "having" and any variations thereof used herein are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products or apparatuses.

[0089] It should be understood that the orientation or positional relationship indicated by terms such as "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation on the present invention.

[0090] In addition, the terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0091] Although the embodiments of the present invention have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are all within the scope and spirit of the present invention as defined in the claims. Moreover, the present invention described herein may have other embodiments and can be implemented or realized in various ways. Unless otherwise defined, the technical terms or scientific terms used herein should have the ordinary meaning as understood by those of ordinary skill in the art to which the present invention pertains.

Claims

1. A real-time monitoring device for wafer warpage, characterized in that: include: The detection component is arranged on the adsorption surface of the electrostatic chuck and is staggered with the ejector pins and air holes on the electrostatic chuck. The detection component is used to detect the strain of the wafer adsorbed on the adsorption surface in real time, and then analyze the warping change of the wafer.

2. The wafer warpage real-time monitoring device according to claim 1, characterized in that: The detection component includes a strain component. During the process, the strain component is always in contact with the wafer and performs strain detection on the wafer in real time.

3. The wafer warpage real-time monitoring device according to claim 2, characterized in that: The strain component is also used to convert the detected strain of the wafer into a resistance value.

4. The wafer warpage real-time monitoring device according to claim 2, characterized in that: The strain assembly includes a plurality of strain detection units arranged at intervals on the adsorption surface; The distribution range of the strain detection units covers the entire adsorption surface; or, the strain detection units are distributed in a set detection area on the adsorption surface.

5. The wafer warpage real-time monitoring device according to claim 1, characterized in that: Also includes: A feedback adjustment module is connected to the detection component and the process control system and is used to feedback adjust the settings of the process parameters in the process control system according to the strain condition of the wafer, so as to make real-time adjustments to the warping state of the wafer and the uniformity of the key dimensions and thickness of the wafer across the entire wafer during the process.

6. The wafer warpage real-time monitoring device according to claim 5, characterized in that: The process control system comprises a mass flow control system for measuring and controlling the flow of process gas; and / or, The process control system includes a temperature control system for monitoring and controlling the process temperature.

7. The real-time monitoring device for wafer warpage according to any one of claims 1 to 6, characterized in that: The detection component is embedded in the adsorption surface, and the surface of the detection component is flush with the adsorption surface.

8. A semiconductor device, characterized in that: include: A real-time monitoring device for wafer warpage as described in any one of claims 1 to 7.

9. A method for real-time monitoring of wafer warpage, characterized in that: Using the wafer warpage real-time monitoring device according to any one of claims 1 to 8, the monitoring method comprises: The wafer is sucked flat on the adsorption surface of the electrostatic chuck by the electrostatic adsorption force of the electrostatic chuck; The strain of the wafer is detected in real time by a detection component arranged on the electrostatic chuck, so that the warpage change of the wafer can be analyzed and obtained.

10. The method for real-time monitoring of wafer warpage according to claim 9, characterized in that: The detection component includes a strain component; During the process, the strain component is always in contact with the wafer and performs strain detection on the wafer in real time.

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