Analysis method of scanning transmission electron microscope sample

Abstract

The invention provides an analysis method of a scanning transmission electron microscope sample, which comprises the following steps of: enabling an electron beam of a scanning transmission electron microscope to enter a to-be-tested sample to form a correction reference mark, and enabling the correction reference mark and a target analysis area to have a preset spacing distance, the image contrast of the correction reference mark in the characterization image of the to-be-detected sample is different from that of the target analysis area; therefore, when the target analysis area is selected according to the representation image, the target analysis area in the representation image and the correction reference mark have obvious image contrast difference, so that the selected target analysis area can be corrected by using the correction reference mark, and the selected target analysis area is consistent with the actual position of the target analysis area; therefore, the component information of the target analysis area is accurately obtained, and the accuracy of sample analysis is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and particularly to an analysis method for a sample of a scanning transmission electron microscope. Background Art

[0002] A scanning transmission electron microscope (STEM) is an important tool for failure analysis, which can be used to observe the failure position of a sample, and perform precise measurement and composition analysis on the sample. When analyzing the sample, by using the electron beam of the scanning transmission electron microscope to scan the target position of the sample point by point, an atomic number contrast phase, a high-resolution atomic phase, composition information, etc. can be obtained. However, when obtaining the composition information of the target position, there is a slight drift of the sample, so that the target position of the collected sample is shifted, thus affecting the accuracy of the collected composition information. For example, as Figure 1 shown, the composition information of the collected target position includes incorrect element information (as shown by the dotted box), thus affecting the accuracy of the composition information of the target position 10. The existing sample analysis method is to use the ion beam of a focused ion beam (FIB) machine tool to form an ion beam mark on the sample when forming the sample, and use the ion beam mark to perform reverse compensation for the drift of the sample, so as to correct the target position of the collected sample. However, due to the large damage range of the focused ion beam to the sample and the limitation of the resolution of the microscope of the focused ion beam (FIB) machine tool, etc., there is a risk of damaging the target position. Summary of the Invention

[0003] The purpose of the present invention is to provide an analysis method for a sample of a scanning transmission electron microscope, so as to accurately obtain the composition information of the target analysis area of the sample to be measured and improve the accuracy of sample analysis.

[0004] To achieve the above purpose, the present invention provides an analysis method for a sample of a scanning transmission electron microscope, including:

[0005] Providing a sample to be measured, where the sample to be measured has a target analysis area;

[0006] Inciding the electron beam of the scanning transmission electron microscope onto the sample to be measured to form a calibration reference mark, where there is a predetermined interval distance between the calibration reference mark and the target analysis area;

[0007] Scanning the sample to be measured with the electron beam to obtain a characterization image of the sample to be measured, where the calibration reference mark in the characterization image has a different image contrast from the target analysis area; and,

[0008] Select the target analysis region according to the characterized image, and correct the selected target analysis region by using the calibration reference mark to obtain the composition information of the target analysis region.

[0009] Optionally, in the analysis method of the transmission electron microscope sample, the sample to be measured includes a substrate and a film layer to be measured located on the substrate, the target analysis region is a partial region of the film layer to be measured, and the calibration reference mark is located in the film layer to be measured.

[0010] Optionally, in the analysis method of the transmission electron microscope sample, the method for forming the calibration reference mark includes:

[0011] Preset the spacing distance between the target analysis region and the calibration reference mark; and,

[0012] According to the preset spacing distance, irradiate the electron beam of the scanning transmission electron microscope onto the film layer to be measured outside the target analysis region and maintain for a preset time to form the calibration reference mark.

[0013] Optionally, in the analysis method of the transmission electron microscope sample, the calibration reference mark includes at least one calibration reference sub-mark, and the cross-sectional shape of the calibration reference sub-mark is circular.

[0015] Optionally, in the analysis method of the transmission electron microscope sample, the calibration reference mark includes a plurality of calibration reference sub-marks, and the plurality of calibration reference sub-marks are arranged in an array, or the plurality of calibration reference sub-marks surround to form a circle, an ellipse, a rectangle or a triangle.

[0016] Optionally, in the analysis method of the transmission electron microscope sample, the calibration reference mark is a hole formed in the film layer to be measured.

[0017] Optionally, in the analysis method of the transmission electron microscope sample, the preset time is 2 min - 20 min.

[0018] Optionally, in the analysis method of the transmission electron microscope sample, the film layer to be measured includes at least two deposited film layers stacked in the vertical direction of the substrate, and the materials of each deposited film layer are different.

[0019] Optionally, in the analysis method of the transmission electron microscope sample, the film layer to be measured includes a plurality of repeating structures arranged periodically in the horizontal direction of the substrate and insulating layers located between the plurality of repeating structures.

[0020] Optionally, in the method for analyzing a transmission electron microscope sample, the method for obtaining the composition information of the target analysis region includes:

[0021] Performing energy spectrum analysis on the target analysis region by using an energy spectrometer to obtain the composition information of the target analysis region.

[0022] In the method for analyzing a scanning transmission electron microscope sample provided by the present invention, by irradiating an electron beam of the scanning transmission electron microscope onto a sample to be measured to form a calibration reference mark, there is a predetermined spacing distance between the calibration reference mark and the target analysis region, and the image contrast of the calibration reference mark in the characterization image of the sample to be measured is different from that of the target analysis region; thus, when selecting the target analysis region according to the characterization image, there is an obvious image contrast difference between the target analysis region in the characterization image and the calibration reference mark. Therefore, the selected target analysis region can be calibrated by using the calibration reference mark to make the selected target analysis region consistent with the actual position of the target analysis region, so as to accurately obtain the composition information of the target analysis region and improve the accuracy of sample analysis. Description of the Drawings

[0023] Figure 1 is a composition distribution diagram of the target position of the sample collected in the prior art;

[0024] Figure 2 is a schematic flowchart of the method for analyzing a scanning transmission electron microscope sample according to an embodiment of the present invention;

[0025] Figure 3 is a schematic cross-sectional structure diagram of a sample to be measured in the method for analyzing a scanning transmission electron microscope sample provided by an embodiment of the present invention;

[0026] Figure 4 is a schematic cross-sectional structure diagram of another sample to be measured in the method for analyzing a scanning transmission electron microscope sample provided by an embodiment of the present invention;

[0027] Figure 5 is a schematic cross-sectional structure diagram of a sample to be measured after forming a calibration reference mark in the method for analyzing a scanning transmission electron microscope sample provided by an embodiment of the present invention;

[0028] Figure 6 is a schematic cross-sectional structure diagram of another sample to be measured after forming a calibration reference mark in the method for analyzing a scanning transmission electron microscope sample provided by an embodiment of the present invention;

[0029] Figure 7 is a schematic structure diagram of a calibration reference mark in the method for analyzing a scanning transmission electron microscope sample provided by an embodiment of the present invention;

[0030] Figure 8 It is a schematic structural diagram of another calibration reference mark in the analysis method of a scanning transmission electron microscope sample provided by an embodiment of the present invention;

[0031] Figure 9 It is a schematic structural diagram of yet another calibration reference mark in the analysis method of a scanning transmission electron microscope sample provided by an embodiment of the present invention;

[0032] Figure 10 It is a STEM schematic diagram of a sample to be measured in the analysis method of a scanning transmission electron microscope sample provided by an embodiment of the present invention;

[0033] Figure 11 It is a composition distribution diagram of a target analysis region in the analysis method of a scanning transmission electron microscope sample provided by an embodiment of the present invention;

[0034] The description of the reference numerals is as follows:

[0035] 10 - target position;

[0036] 100 - sample to be measured; 110 - substrate; 120 - film layer to be measured; 120a - target analysis region; 121a - first deposited film layer; 121b - second deposited film layer; 123c - third deposited film layer; 122 - repeating structure; 123 - insulating layer; 130 - calibration reference mark; 130a - calibration reference sub - mark. Detailed implementation manners

[0037] The following further elaborates on the analysis method of a scanning transmission electron microscope sample proposed by the present invention in conjunction with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the accompanying drawings are all in a very simplified form and use non - precise scales, only for conveniently and clearly assisting in explaining the purpose of the embodiments of the present invention.

[0038] Figure 2 It is a schematic flowchart of the analysis method of a scanning transmission electron microscope sample provided by an embodiment of the present invention. As Figure 2 shown, this embodiment provides an analysis method of a scanning transmission electron microscope sample, including:

[0039] Step S1: Provide a sample to be measured, and the sample to be measured has a target analysis region;

[0040] Step S2: Incident an electron beam of a scanning transmission electron microscope onto the sample to be measured to form a calibration reference mark, and there is a predetermined interval distance between the calibration reference mark and the target analysis region;

[0041] Step S3: Scanning the sample to be measured with the electron beam to obtain a characterization image of the sample to be measured, where the contrast of the calibration reference mark in the characterization image is different from that of the target analysis region; and,

[0042] Step S4: Selecting the target analysis region according to the characterization image, and calibrating the selected target analysis region with the calibration reference mark to obtain the composition information of the target analysis region.

[0043] Figures 3 to 8 are the structural schematic diagrams of the steps of the sample analysis method of the scanning transmission electron microscope provided by the embodiments of the present invention. Next, the sample analysis method of the scanning transmission electron microscope provided by the embodiments of the present invention will be described in detail in conjunction with Figures 3 to 8 This will be described in detail for the sample analysis method of the scanning transmission electron microscope provided by the embodiments of the present invention.

[0044] First, perform step S1. Refer to Figure 3 As shown, a sample to be measured 100 is provided, and the sample to be measured 100 has a target analysis region 120a. The sample to be measured 100 is a part of a complete wafer, and the sample to be measured 100 is formed by semiconductor device sample preparation. For example, the wafer is cut or thinned, etc., and the thinning process can be achieved by focused ion beam (FIB) to form the sample to be measured 100.

[0045] Specifically, the sample to be measured 100 includes a substrate 110 and a film layer to be measured 120 located on the substrate 110. The target analysis region 120a is a partial region of the film layer to be measured 120, for example, it can be a partial region on the surface of the film layer to be measured 120. Among them, the substrate 110 can be silicon (Si), germanium (Ge), silicon germanium (GeSi), silicon carbide (SiC), etc., or other materials, without special limitation.

[0046] As Figure 3 shown, in one embodiment, the film layer to be measured 120 includes at least two deposited film layers stacked along the vertical direction of the substrate 110, and the materials of each deposited film layer are different. For example, the film layer to be measured 120 includes a first deposited film layer 121a, a second deposited film layer 121b, and a third deposited film layer 121c stacked in sequence from bottom to top. Among them, the deposited film layer can be formed on the substrate 110 through multiple processes such as one or more deposition processes, etching processes, chemical mechanical polishing, and cleaning processes. The specific deposited film layer is related to the actual process flow. The materials of the deposited film layer can include at least one of metal, silicon oxide, polysilicon, and silicon nitride.

[0047] Figure 4 is a schematic cross-sectional structure diagram of another sample to be measured in the sample analysis method of the scanning transmission electron microscope provided by the embodiments of the present invention. AsFigure 4 As shown, in another embodiment, the film layer 120 to be measured includes a plurality of repeating structures 122 arranged periodically in the horizontal direction of the substrate 110 and an insulating layer 123 located between the plurality of repeating structures 122. The insulating layer 123 is used to isolate the plurality of repeating structures 122. The material of the insulating layer 123 can be an oxide, such as silicon oxide (SiO 2 ). The repeating structure 122 can include, for example, a gate, and the material of the gate can be composed of a conductive material, such as a metal. Alternatively, the material of the gate can also be polysilicon.

[0048] Next, step S2 is executed. Refer to Figure 5 As shown, the electron beam of a scanning transmission electron microscopy (STEM) is incident on the sample 100 to be measured to form a calibration reference mark 130. There is a predetermined distance between the calibration reference mark 130 and the target analysis region 120a. Among them, the calibration reference mark 130 is located in the film layer 120 to be measured, and the calibration reference mark 130 can penetrate or partially penetrate the film layer 120 to be measured.

[0049] Specifically, the method for forming the calibration reference mark 130 includes: First, a predetermined distance d between the target analysis region 120a and the calibration reference mark 130 is set, so that the subsequent formed calibration reference mark 130 has a predetermined distance d from the target analysis region 120a, which can prevent damage to the target analysis region 120a. And, the calibration reference mark 130 is formed by the electron beam of the scanning transmission electron microscopy. Since the resolution of the scanning transmission electron microscopy is relatively high, a mark with nanometer precision can be formed on the sample 100 to be measured without the aid of other equipment, which can simplify the process flow.

[0050] Then, according to the predetermined distance, the electron beam of the scanning transmission electron microscopy is incident on the film layer 120 outside the target analysis region 120a and maintained for a predetermined time to form the calibration reference mark 130. When the electron beam irradiates the film layer 120, it will cause interaction between the electrons and the sample 100 to be measured. After the electron beam stays in the film layer 120 for a predetermined time, it will damage the film layer 120 to form the calibration reference mark 130. Among them, the current of the electron beam can be 0.5 nA to 1 nA, and the voltage can be 200 KV.

[0051] In this embodiment, the calibration reference mark 130 may be a hole formed in the film layer 120 to be measured, where the hole may penetrate or partially penetrate the film layer 120 to be measured, so as to facilitate the subsequent identification of the calibration reference mark 130 in the characterization image.

[0052] Figure 5 It is a schematic cross-sectional structure diagram of a sample to be measured after a calibration reference mark is formed in the analysis method of a scanning transmission electron microscope sample provided by an embodiment of the present invention. As Figure 5 shown, the calibration reference mark 130 may be formed above, below, or on both sides of the target analysis region 120a. Figure 5 Taking the calibration reference mark 130 located on one side of the target analysis region 120a as an example for illustration, the calibration reference mark 130 may also be located above or below the target analysis region 120a. Specifically, the position of the calibration reference mark 130 may be set according to the position of the target analysis region 120a in the film layer 120 to be measured. For example, if the target analysis region 120a is close to the top of the film layer 120 to be measured, the calibration reference mark 130 may be set below or on one side of the target analysis region 120a to avoid damaging the target analysis region 120a during the formation of the calibration reference mark 130.

[0053] Figure 6 It is another schematic cross-sectional structure diagram of a sample to be measured after a calibration reference mark is formed in the analysis method of a scanning transmission electron microscope sample provided by an embodiment of the present invention. As Figure 6 shown, if the film layer to be measured includes a plurality of repeating structures 122, the calibration reference mark may preferably be set in the insulating layer 123 between two repeating structures 122 outside the target analysis region 120a, which is beneficial to making the contrast of the image contrast between the calibration reference mark 130 and the target analysis region 120a more obvious. Of course, the calibration reference mark 130 may also be set on the repeating structure 122 outside the target analysis region 120a.

[0054] Figure 7 It is a schematic structural diagram of a calibration reference mark in the analysis method of a scanning transmission electron microscope sample provided by an embodiment of the present invention. As Figure 7 shown, in this embodiment, the calibration reference mark 130 includes at least one calibration reference sub-mark 130a, and the cross-sectional shape of the calibration reference sub-mark 130a may be circular. It should be noted that Figure 7 only one calibration reference sub-mark 130a is included in the calibration reference mark, and the cross-sectional shape of the calibration reference sub-mark 130a is circular as an example for illustration. The calibration reference mark 130 may include two or three calibration reference sub-marks 130a, etc., and the specific number of the calibration reference sub-marks 130a may be set according to actual needs.

[0055] Figure 8 It is a schematic structural diagram of another calibration reference mark in the analysis method of a scanning transmission electron microscope sample provided by an embodiment of the present invention. As Figure 8 shown, in another embodiment, the calibration reference mark 130 includes a plurality of calibration reference sub - marks 130a, and the plurality of calibration reference sub - marks 130a are arranged in an array.

[0056] Figure 9 It is a schematic cross - sectional structure diagram of another calibration reference mark in the analysis method of a scanning transmission electron microscope sample provided by an embodiment of the present invention. In yet another embodiment, the calibration reference mark 130 includes a plurality of calibration reference sub - marks 130a, and the plurality of calibration reference sub - marks surround to form a circle, an ellipse, a rectangle or a triangle. Here, the plurality of calibration reference sub - marks means that the number of calibration reference sub - marks is more than four. Using a plurality of calibration reference sub - marks 130a can improve the accuracy of subsequent calibration of the target analysis area 120a. Those skilled in the art can set the specific number of the calibration reference sub - marks 130a according to actual needs. For example, the number of calibration reference sub - marks 130a in the calibration reference mark 130 is four, five, six, or seven, etc.

[0057] In this embodiment, the shape of the calibration reference sub - mark 130a can be adjusted by adjusting the relative position between the electron beam and the film layer 120 to be measured and the predetermined time when the electron beam irradiates on the film layer 120 to be measured. Among them, the predetermined time is 2 min - 20 min, such as 2 min, 5 min or 10 min, and the predetermined time can be set according to the specific material.

[0058] Next, step S3 is executed. The electron beam is used to scan the sample 100 to be measured to obtain a characterization image of the sample 100 to be measured. The calibration reference mark 130 in the characterization image has a different image contrast from the target analysis area 120a. Among them, the characterization image is a scanning transmission electron microscope (STEM) image. Specifically, the electron beam of the transmission electron microscope is used to perform point - by - point scanning on the sample 100 to be measured, so that a characterization image of the sample 100 to be measured can be obtained.

[0059] Figure 10 It is a STEM schematic diagram of the sample to be measured in the analysis method of a scanning transmission electron microscope sample provided by an embodiment of the present invention. As Figure 10 shown, the calibration reference mark 130 in the characterization image has a different image contrast from the target analysis area 120a, so that there is an obvious image contrast difference between the target analysis area 120a and the calibration reference mark in the characterization image, which is convenient for accurately identifying the calibration reference mark in the characterization image later.

[0060] Next, step S4 is executed. The target analysis region 120a is selected according to the characterization image, and the selected target analysis region 120a is corrected by using the calibration reference mark 130 to obtain the component information of the target analysis region 120a.

[0061] Specifically, an energy dispersive spectrometer (EDS) is used to perform energy spectrum analysis on the target analysis region 120a to obtain the component information of the target analysis region 120a. The energy dispersive spectrometer is generally used as an accessory of a scanning transmission electron microscope. The characterization image of the sample to be measured 100 is obtained through the electron beam of the scanning transmission electron microscope, and then the target analysis region 120a is selected according to the characterization image, that is, the target analysis region 120a of the sample to be measured 100 is located for energy spectrum analysis.

[0062] More specifically, when the electron beam irradiates the sample to be measured 100, due to the interaction between the electrons and the sample to be measured 100, various information reflecting the morphology, structure, and composition of the sample to be measured 100 will be generated. After the high-energy electrons in the electron beam of the scanning transmission electron microscope are incident on the sample to be measured 100, the inner shell electrons of the atoms of the elements in the sample to be measured 100 will be excited to the outer shell with higher energy, or directly excited to outside the atom, increasing the energy of the atomic system. The outer electrons of the atom will quickly jump to the inner shell with vacancies to fill the vacancies and reduce the total energy of the atomic system, and release the excess energy in the form of characteristic X-rays. The energy dispersive spectrometer can analyze the wavelength and intensity of the characteristic X-rays emitted by the sample to be measured 100 respectively to analyze the components contained in the target analysis region 120a of the sample to be measured 100, so as to obtain the component information of the target analysis region 120a.

[0063] Furthermore, by performing energy spectrum analysis on the target analysis region 120a with an energy dispersive spectrometer, an element spectrum diagram of the target analysis region 120a can be obtained, and then the component information of the target analysis region 120a can be obtained according to the element spectrum diagram. The component information includes, for example, the element content (such as nitrogen element content) and element distribution of the target analysis region 120a.

[0064] When obtaining the composition information of the target analysis region 120a, since the sample to be measured will drift, it will cause the movement of the energy spectrum signal in space. Therefore, it is necessary to correct the selected target analysis region 120a. That is to say, it is necessary to reposition the target analysis region 120a of the sample to be measured 100 to ensure the accuracy of the composition information of the obtained target analysis region 120a. In this embodiment, by using the calibration reference mark 130 to correct the selected target analysis region 120a, the selected target analysis region 120a can be made to coincide with the actual position of the target analysis region 120a, so as to accurately obtain the composition information of the target analysis region 120a and improve the accuracy of sample analysis.

[0065] Especially when the characteristic structure of the target analysis region 120a is not obvious, resulting in the same image contrast between the target analysis region 120a and the non-target analysis regions 120a around it, or when the measured film layer 120 includes multiple repeating structures 122, and it is impossible to accurately identify the drift between the repeating structures 122 due to the drift of the sample to be measured 100. Since the image contrast of the calibration reference mark 130 is different from that of the target analysis region 120a, in the characterization image of the sample to be measured 100, the calibration reference mark 130 and the target analysis region 120a have obvious contrast. Therefore, the selected target analysis region 120a can be corrected by using the calibration reference mark 130.

[0066] Specifically, during the process of obtaining the composition information of the target analysis region 120a, the drift of the sample to be measured 100 will cause the movement of the calibration reference mark 130. The movement of the calibration reference mark 130 can be used to determine the drift of the sample to be measured 100 (drift direction or distance, etc.), and the relative position relationship between the calibration reference mark 130 and the target analysis region 120a can be used to accurately locate the target analysis region 120a, so as to realize the correction of the selected target analysis region 120a, make the selected target analysis region 120a coincide with the actual position of the target analysis region 120a, and thus accurately obtain the composition information of the target analysis region 120a and improve the accuracy of sample analysis.

[0067] Figure 11 It is the composition distribution map of the target analysis region in the analysis method of the scanning transmission electron microscope sample provided by the embodiment of the present invention. Figure 11 It is the elemental spectrum obtained by performing composition analysis on the target analysis region using EDS. Comparing Figure 11 and Figure 1 it can be seen that the composition distribution map of the target analysis region collected by using the analysis method of the scanning transmission electron microscope sample provided by this embodiment is relatively accurate and can improve the accuracy of sample analysis.

[0068] In summary, in the analysis method of the scanning transmission electron microscope sample provided by the embodiment of the present invention, the electron beam of the scanning transmission electron microscope is incident on the sample to be measured to form a calibration reference mark. There is a predetermined interval distance between the calibration reference mark and the target analysis area, and the image contrast of the calibration reference mark in the characterization image of the sample to be measured is different from that of the target analysis area. Thus, when selecting the target analysis area according to the characterization image, there is an obvious image contrast difference between the target analysis area in the characterization image and the calibration reference mark. Therefore, the selected target analysis area can be calibrated by using the calibration reference mark to make the selected target analysis area consistent with the actual position of the target analysis area, so as to accurately obtain the composition information of the target analysis area and improve the accuracy of sample analysis.

[0069] The above description is only a description of the preferred embodiments of the present invention and does not limit the scope of the present invention in any way. Any changes and modifications made by those of ordinary skill in the art of the present invention according to the above disclosure shall fall within the scope of protection of the claims.

Claims

1. A method for analyzing a sample of a scanning transmission electron microscope, characterized in that, comprising: providing a sample to be measured, the sample to be measured having a target analysis region; inciding an electron beam of the scanning transmission electron microscope onto the sample to be measured to form a calibration reference mark, there being a predetermined spacing distance between the calibration reference mark and the target analysis region; scanning the sample to be measured with the electron beam to obtain a characterization image of the sample to be measured, the calibration reference mark in the characterization image having a different image contrast from that of the target analysis region; and, selecting the target analysis region according to the characterization image and calibrating the selected target analysis region with the calibration reference mark to obtain composition information of the target analysis region.

2. The method for analyzing a sample of a transmission electron microscope according to claim 1, characterized in that, the sample to be measured comprises a substrate and a film layer to be measured located on the substrate, the target analysis region being a partial region of the film layer to be measured, and the calibration reference mark being located in the film layer to be measured.

3. The method for analyzing a sample of a transmission electron microscope according to claim 2, characterized in that, the method for forming the calibration reference mark comprises: predetermining the spacing distance between the target analysis region and the calibration reference mark; and, inciding the electron beam of the scanning transmission electron microscope onto the film layer to be measured outside the target analysis region according to the predetermined spacing distance and maintaining for a predetermined time to form the calibration reference mark.

4. The method for analyzing a sample of a transmission electron microscope according to claim 3, characterized in that, the calibration reference mark comprises at least one calibration reference sub-mark, and the cross-sectional shape of the calibration reference sub-mark is circular.

5. The method for analyzing a sample of a transmission electron microscope according to claim 3, characterized in that, the calibration reference mark comprises a plurality of calibration reference sub-marks, and the plurality of calibration reference sub-marks are arranged in an array, or the plurality of calibration reference sub-marks surround to form a circle, an ellipse, a rectangle or a triangle.

6. The method for analyzing a sample of a transmission electron microscope according to any one of claims 3 to 5, characterized in that, the calibration reference mark is a hole formed in the film layer to be measured.

7. The method for analyzing a sample of a scanning transmission electron microscope according to claim 3, characterized in that, the predetermined time is 2 min - 20 min.

8. The method for analyzing a sample of a transmission electron microscope according to claim 2, characterized in that, the film layer to be measured comprises at least two deposited film layers stacked in the vertical direction of the substrate, and the materials of each deposited film layer are different.

9. The method for analyzing a sample of a transmission electron microscope according to claim 2, characterized in that, the film layer to be measured comprises a plurality of repeating structures arranged periodically in the horizontal direction of the substrate and insulating layers located between the plurality of repeating structures.

10. The method for analyzing a sample of a scanning transmission electron microscope according to claim 1, characterized in that, the method for obtaining the composition information of the target analysis region comprises: Perform energy spectrum analysis on the target analysis region using an energy spectrometer to obtain the composition information of the target analysis region.

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