Electronic device and manufacturing method thereof

Abstract

A manufacturing method of an electronic device includes: providing a first mother substrate including a plurality of first substrates; providing a second mother substrate including a plurality of second substrates; forming a mother substrate alignment mark group in the first mother substrate and the second mother substrate; forming a recombination alignment mark group in each first substrate and each second substrate; assembling the first mother substrate and the second mother substrate according to the mother substrate alignment mark group to form a mother substrate element; and cutting the mother substrate element.

Description

Technical Field

[0001] The present invention relates to an electronic device and a manufacturing method thereof, and more particularly to an electronic device having a reorganized alignment mark group and a manufacturing method thereof. Background Art

[0002] The annual global shipment volume of liquid crystal electronic devices is about 700 million units, and the shipment volume is increasing year by year. The number of discarded liquid crystal electronic devices during the production process is also rising year by year. Currently, most of these discarded liquid crystal electronic devices are disposed of by burying. However, with the limited landfill sites, the disposal cost of discarded liquid crystal electronic devices is increasing day by day, thus increasing the production cost of liquid crystal electronic devices year by year.

[0003] In consideration of environmental protection and cost reduction of production, there is a need for a method that can reuse the substrates recovered from liquid crystal electronic devices to manufacture new electronic devices after the substrates are completely recovered. Summary of the Invention

[0004] In view of the above problems, the present invention provides an electronic device that can be recycled and remanufactured, a manufacturing method of the electronic device, and a manufacturing method of an electronic device using the recycled electronic device.

[0005] One aspect of the present invention provides a manufacturing method of an electronic device, including: providing a first mother substrate including a plurality of first substrates; providing a second mother substrate including a plurality of second substrates; forming a mother substrate alignment mark group in the first mother substrate and the second mother substrate, wherein the mother substrate alignment mark group is not located in the first substrate and the second substrate; forming a reorganized alignment mark group in each first substrate and each second substrate; assembling the first mother substrate and the second mother substrate according to the mother substrate alignment mark group to form a mother substrate element; and cutting the mother substrate element along the boundary of each first substrate and each second substrate.

[0006] One aspect of the present invention provides a manufacturing method of an electronic device, including: providing a recycled electronic device, the recycled electronic device including a first substrate and a second substrate, and the first substrate and the second substrate having a reorganized alignment mark group; separating the first substrate and the second substrate of the recycled electronic device; and reassembling the first substrate and the second substrate according to the reorganized alignment mark group.

[0007] One aspect of the present invention provides an electronic device, which includes a first substrate, a second substrate opposite to the first substrate, and a reorganized alignment mark group disposed in the first substrate and the second substrate. Brief Description of the Drawings

[0008] The following detailed description will be fully disclosed in conjunction with the accompanying drawings.

[0009] Figure 1 is a flowchart of a manufacturing method of an electronic device according to an embodiment of the present invention;

[0010] Figure 2 is a top - plan schematic view of a mother substrate element according to an embodiment of the present invention;

[0011] Figure 3 is an exploded view of a mother substrate element according to an embodiment of the present invention;

[0012] Figure 4 is a cross - sectional view of an electronic device according to an embodiment of the present invention;

[0013] Figure 5 is a flowchart of a manufacturing method of an electronic device according to another embodiment of the present invention;

[0014] Figure 6 is a flowchart of a manufacturing method of an electronic device according to another embodiment of the present invention;

[0015] Figure 7 is a flowchart of a manufacturing method of an electronic device according to an embodiment of the present invention.

[0016] In the above - mentioned drawings, the meanings of the reference numerals are specifically as follows:

[0017] 1, 2, 3, 4: Manufacturing methods of the electronic device;

[0018] S101 - S106, S201 - S206, S301 - S306, S401 - S403: Steps;

[0019] 10: Mother substrate element;

[0020] 10’: Electronic device;

[0021] 101: First mother substrate;

[0022] 1011: First substrate;

[0023] 102: Liquid crystal layer;

[0024] 1021: Liquid crystal molecules;

[0025] 103: Second mother substrate;

[0026] 1031: Second substrate;

[0027] 104: Optical layer alignment mark;

[0028] 105, 105’: Mother substrate alignment marks;

[0029] 107: Re - combined alignment mark group;

[0030] 1071, 1071': Coarse alignment marks;

[0031] 1073, 1073': Fine alignment marks;

[0032] D1, D2, D3: Directions. Detailed implementation manners

[0033] It will be further understood that when "comprising" and / or "including" are used in this specification, it specifically refers to the presence of the described characteristic components, integers, steps, operations, elements, components, and / or their groups, but does not exclude the presence or addition of one or more other characteristic components, integers, steps, operations, elements, components, and / or their groups. When the singular form "a" is used in this specification, it is also intended to include the plural form unless the context clearly indicates otherwise.

[0034] It will be understood that although terms such as "first", "second", etc. may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part.

[0035] It will be understood that the methods described herein include a plurality of steps, and additional steps may be provided before, during, and / or after the plurality of steps. Some of the steps may be replaced or deleted in different embodiments. Although some of the discussed embodiments are performed in a specific order of steps, these steps may still be performed in another logical order.

[0036] The expression "a - b" used herein to represent a specific numerical range is defined as "≥a and ≤b".

[0037] The term "corresponding" used herein means that in a plane perpendicular to the normal direction of the electronic device / substrate element of the present invention, the projections of the two overlap. For example, the term "A corresponds to B" means that the projection of A in a plane perpendicular to the normal direction of the electronic device / substrate element of the present invention overlaps with the projection of B in this plane.

[0038] One aspect of the present invention provides a method for manufacturing an electronic device. Figure 1 It is a flowchart of Method 1 for manufacturing an electronic device according to an embodiment of the present invention. Figure 2 It is a top - view plane schematic diagram of the substrate element 10 according to an embodiment of the present invention. Figure 3 It is an exploded view of the substrate element 10 according to an embodiment of the present invention.

[0039] The manufacturing method 1 of an electronic device according to an embodiment of the present invention includes step S101 of providing a first mother substrate, step S102 of providing a second mother substrate, step S103 of forming a mother substrate alignment mark group, step S104 of forming a recombined alignment mark group, step S105 of forming a mother substrate element, and step S106 of cutting the mother substrate element, as Figure 1 shown.

[0040] Combined Figure 2 with Figure 3 , the first mother substrate 101 provided in step S101 may include a plurality of first substrates 1011. The plurality of first substrates 1011 may be arranged in columns along a first direction D1 perpendicular to the normal direction D3 of the first mother substrate 101, and multiple columns of the first substrates 1011 may be arranged along a second direction D2 perpendicular to the first direction D1. The plurality of first substrates 1011 do not overlap with each other, and their boundaries are spaced apart from each other by a distance in space. In some embodiments, the first mother substrate 101 may include a transparent or opaque organic material or an inorganic material, and may also include a rigid material or a flexible material. Examples of the organic material may include polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), liquid crystal polymer (LCP), polyetheretherketone (PEEK), polymethyl methacrylate (PMMA), other known suitable materials, or a combination of the above, but the present invention is not limited thereto. Examples of the inorganic material may include a dielectric material or a metal material, but the present invention is not limited thereto. Examples of the rigid material may include glass, quartz, sapphire, ceramic, or plastic, or any suitable material. The "flexible material" herein refers to a material that can be curved, bent, folded, rolled, flexed, stretched, and / or other similar deformations. Examples of the flexible material may include one of the above-mentioned organic materials, but the flexible material referred to in the present invention is not limited to the materials mentioned above.

[0041] In some embodiments, the first mother substrate 101 may include a through hole, a driving circuit, a compensation circuit, and / or an optical fiber or wire material disposed in the through hole that penetrates the first mother substrate 101 along the normal direction D3 of the first mother substrate 101 and is located in the first substrate 1011, but the present invention is not limited thereto. In some embodiments, a circuit and / or a plurality of material layers may be formed on the first mother substrate 101, and the circuit and / or the plurality of material layers may be located in the first substrate 1011. That is, in some embodiments, the first substrate 1011 may include a circuit and / or a plurality of material layers. In some embodiments, the first substrate 1011 may be a glass panel including a circuit and / or a plurality of material layers. In one embodiment, the first substrate 1011 may be a Color Filter (CF) panel, but the present invention is not limited thereto.

[0042] The second mother substrate 103 provided in step S102 may include a plurality of second substrates 1031. The plurality of second substrates 1031 may be arranged in columns along a first direction D1 perpendicular to the normal direction D3 of the second mother substrate 103, and multiple columns of the second substrates 1031 may be arranged along a second direction D2 perpendicular to the first direction D1. The plurality of second substrates 1031 do not overlap each other, and their boundaries are spaced apart from each other by a distance in space. As Figure 2 and Figure 3 shown. In some embodiments, the second mother substrate 103 may include a transparent or opaque organic material or inorganic material, and may also include a rigid material or a flexible material. Examples of the organic material, inorganic material, rigid material, and flexible material are as described above, and thus will not be repeated here.

[0043] In some embodiments, the second mother substrate 103 may include a through hole, a driving circuit, a compensation circuit, and / or an optical fiber or wire material disposed in the through hole that penetrates the second mother substrate 103 along the normal direction D3 of the second mother substrate 103 and is located in the second substrate 1031, but the present invention is not limited thereto. In some embodiments, a circuit and / or a plurality of material layers may be formed on the second mother substrate 103, and the circuit and / or the plurality of material layers may be located in the second substrate 1031. That is, in some embodiments, the second substrate 1031 may include a circuit and / or a plurality of material layers. The second substrate 1031 may include the same or different materials and / or structures as the first substrate 1011. In some embodiments, the second substrate 1031 may be a glass panel including a circuit and / or a plurality of material layers. In one embodiment, the second substrate 1031 may be a Thin-Film Transistor (TFT) panel, but the present invention is not limited thereto.

[0044] Each first substrate 1011 in the first mother substrate 101 provided in step S101 corresponds to each second substrate 1031 in the second mother substrate 103 provided in step S102. In some embodiments, the shapes and sizes of the first substrate 1011 and the second substrate 1031 are exactly the same, and the projection of the first substrate 1011 on the plane perpendicular to the normal direction D3 of the electronic device of the present invention completely overlaps with the projection of the second substrate 1031 on this plane, but the present invention is not limited thereto. In some embodiments, the second substrate 1031 may be slightly larger than the first substrate 1011, and the projection of the first substrate 1011 on the plane perpendicular to the normal direction D3 of the electronic device of the present invention falls within the projection of the second substrate 1031 on this plane.

[0045] The mother substrate alignment mark group is formed in the first mother substrate 101 and the second mother substrate 103 in step S103. The mother substrate alignment mark group formed in step S103 can be located on any surface of the first mother substrate 101 and / or the second mother substrate 103, inside the first mother substrate 101 and / or the second mother substrate 103, or extend from any surface of the first mother substrate 101 and / or the second mother substrate 103 to the inside of the first mother substrate 101 and the second mother substrate 103. In some embodiments, the mother substrate alignment mark group can extend from any surface of the first mother substrate 101 and the second mother substrate 103 to the inside of the first mother substrate 101 and the second mother substrate 103, but the present invention is not limited thereto. In some embodiments, the mother substrate alignment mark group can be located on one surface of the first mother substrate 101 and inside the second mother substrate 103. The mother substrate alignment mark group can include a plurality of mother substrate alignment marks. The mother substrate alignment mark group can include a first mother substrate alignment mark 105 in the first mother substrate 101 and a second mother substrate alignment mark 105' formed in the second mother substrate 103 and corresponding to the first mother substrate alignment mark 105 in the first mother substrate 101. The formation of the first mother substrate alignment mark 105 and the second mother substrate alignment mark 105' helps the alignment of the first mother substrate 101 and the second mother substrate 103 in step S105 of subsequently forming the mother substrate elements. The process for forming the mother substrate alignment mark group in step S103 can include a photomask injection process, a laser marking process, other suitable injection processes, or any combination thereof.

[0046] In some embodiments, the first mother substrate alignment mark 105 may be located on the side edges and / or around the corners of the first mother substrate 101 and / or around the first substrate 1011 and not in the first substrate 1011, while the second mother substrate alignment mark 105' may be located on the side edges and / or around the corners of the second mother substrate 103 and / or around the second substrate 1031 and not in the second substrate 1031, but the present invention is not limited thereto. In some embodiments, the first mother substrate alignment mark 105 may be located around the four corners of the first mother substrate 101, the periphery of the first substrate 1011 and not in the first substrate 1011, while the second mother substrate alignment mark 105' may be located around the four corners of the second mother substrate 103, the periphery of the second substrate 1031 and not in the second substrate 1031, as Figure 2 and Figure 3 shown. The first mother substrate alignment mark 105 and the second mother substrate alignment mark 105' may have various shapes, such as circular, star-shaped, cross-shaped, square-shaped, or any combination thereof, but the present invention is not limited thereto. The shapes of the first mother substrate alignment mark 105 and the second mother substrate alignment mark 105' are not specifically limited as long as they can play the role of alignment.

[0047] The recombined alignment mark group 107 is formed in each of the first substrates 1011 in the first mother substrate 101 and each of the second substrates 1031 in the second mother substrate 103 in step S104, as Figure 3As shown. The formed recombinant alignment mark group 107 in step S104 can be located on any surface of the first substrate 1011 and / or the second substrate 1031, inside the first substrate 1011 and / or the second substrate 1031, or extend from any surface of the first substrate 1011 and / or the second mother substrate 1031 into the first substrate 1011 and the second substrate 1031. In some embodiments, the recombinant alignment mark group 107 can extend from any surface of the first substrate 1011 and the second substrate 1031 into the first substrate 1011 and the second substrate 1031, but the present invention is not limited thereto. In some embodiments, the recombinant alignment mark group 107 can be located on one surface of the first substrate 1011 and inside the second substrate 1031. In some embodiments, step S103 can be performed before step S104, but the present invention is not limited thereto. In some embodiments, step S103 can be performed after step S104 or simultaneously with step S104. The process for forming the recombinant alignment mark group 107 in step S104 can include a mask injection process, a laser marking process, other suitable injection processes, or any combination thereof. In the embodiment where step S103 and step S104 are performed simultaneously, step S103 and step S104 can use the same process, such as a mask injection process. In the embodiments where step S103 is performed before or after step S104, step S103 and step S104 can use the same or different processes. For example, step S103 can use a mask injection process while step S104 can use a laser marking process. In some embodiments, the recombinant alignment mark group 107 in step S104 is formed by a laser marking process, such as using a UV pulsed laser with a wavelength of 300 - 500 nm and an energy of 1 - 5 W, and is formed in each first substrate 1011 and each second substrate 1031 in a single-sided penetration manner. In some embodiments, the laser marking process uses a UV pulsed laser with a wavelength of 355 nm and an energy of 1 - 2 W. In some embodiments, the recombinant alignment mark group 107 can include a coarse alignment mark group and a fine alignment mark group. The coarse alignment mark group can include a plurality of coarse alignment marks. The plurality of coarse alignment marks can include a first coarse alignment mark 1071 in the first substrate 1011 and a second coarse alignment mark 1071' in the second substrate 1031 corresponding to the first coarse alignment mark 1071 in the first substrate 1011. The fine alignment mark group can include a plurality of fine alignment marks. The plurality of fine alignment marks can include a first fine alignment mark 1073 in the first substrate 1011 and a second fine alignment mark 1073' in the second substrate 1031 corresponding to the first fine alignment mark 1073 in the first substrate 1011. The coarse alignment marks and the fine alignment marks can have various shapes, such as circular, star-shaped, cross-shaped, box-shaped, or any combination thereof, but the present invention is not limited thereto.There is no specific limitation on the shapes of the coarse alignment marks and the fine alignment marks, as long as they can play the role of alignment. In some embodiments, in order to better distinguish the coarse alignment mark group and the fine alignment mark group, the coarse alignment marks in the coarse alignment mark group may have different shapes or different sizes from the fine alignment marks in the fine alignment mark group. In some embodiments, the positions where the respective coarse alignment marks in the coarse alignment mark group are located are different from the positions where the respective fine alignment marks in the fine alignment mark group are located. The number of the coarse alignment marks in the coarse alignment mark group may be the same as or different from the number of the fine alignment marks in the fine alignment mark group. For example, in some embodiments, two first coarse alignment marks 1071 are formed at both ends of the diagonal of the first substrate 1011, and two corresponding second coarse alignment marks 1071' are formed at both ends of the diagonal of the second substrate 1031. Four first fine alignment marks 1073 are formed around the four corners of the first substrate 1011, and four corresponding second fine alignment marks 1073' are formed around the four corners of the second substrate 1031. As shown in... Figure 2 and Figure 3 as shown, but the present invention is not limited thereto.

[0048] In some embodiments, each coarse alignment mark in the coarse alignment mark group may have a maximum width of about 290 μm - 510 μm. The maximum width here refers to the maximum length that can be measured for the coarse alignment mark in any direction. For example, in the embodiment where the coarse alignment mark is circular, the maximum width of the coarse alignment mark refers to the diameter of the coarse alignment mark. In the embodiment where the coarse alignment mark is oval, the maximum width of the coarse alignment mark refers to the major axis diameter of the coarse alignment mark. In the embodiment where the coarse alignment mark is cross-shaped, the maximum width of the coarse alignment mark refers to the length of the longer end of the coarse alignment mark. In some embodiments, the size of each coarse alignment mark in the coarse alignment mark group is 300 - 500 μm, and the tolerance is 10 μm.

[0049] In some embodiments, each fine alignment mark in the fine alignment mark group may have a maximum width of about 45 μm - 155 μm. The maximum width here refers to the maximum length that can be measured for the fine alignment mark in any direction. For example, in the embodiment where the fine alignment mark is circular, the maximum width of the fine alignment mark refers to the diameter of the fine alignment mark. In the embodiment where the fine alignment mark is oval, the maximum width of the fine alignment mark refers to the major axis diameter of the fine alignment mark. In the embodiment where the fine alignment mark is cross-shaped, the maximum width of the fine alignment mark refers to the length of the longer end of the fine alignment mark. In some embodiments, the size of each fine alignment mark in the fine alignment mark group is 50 - 150 μm, and the tolerance is 5 μm.

[0050] The step S105 of forming the mother substrate element includes assembling the first mother substrate 101 and the second mother substrate 103 according to the set of mother substrate alignment marks formed in step S103 to form the mother substrate element 10, as Figure 2 and Figure 3 shown.

[0051] In some embodiments, the manufacturing method 1 of the electronic device according to the embodiments of the present invention may further include an optical layer forming step and an optical layer alignment mark forming step. The optical layer alignment mark forming step may be performed before or after the step S105 of forming the mother substrate element. The optical layer alignment mark forming step is performed before the optical layer forming step. Non-limiting examples of the optical layer may include a polarizing layer, a scattering layer, an anti-peeking layer, other suitable layers, or any combination thereof. In some embodiments, the optical layer alignment mark forming step may be performed synchronously with the step S103 of forming the set of mother substrate alignment marks.

[0052] The optical layer alignment mark forming step includes forming the optical layer alignment marks 104 in the first substrate 1011 and / or the second substrate 1031 by using a photomask injection process, a laser marking process, other suitable injection processes, or any combination thereof, as Figure 2 and Figure 3 shown. The optical layer alignment marks 104 may have various shapes, such as circular, star-shaped, cross-shaped, square-shaped, or any combination thereof, but the present invention is not limited thereto. The shape of the optical layer alignment marks 104 is not specifically limited as long as it can help the subsequent formed optical layer to be aligned.

[0053] The step S106 of cutting the mother substrate element includes cutting the mother substrate element 10 including the first mother substrate 101 and the second mother substrate 103 along the boundaries of the first substrate 1011 and / or the second substrate 1031 by using a laser cutting process or other suitable processes. The portions other than the first substrate 1011 and the second substrate 1031 in the mother substrate element 10 will be cut off in step S106. In some embodiments, the manufacturing of the electronic device will be completed after step S106 is completed, but the present invention is not limited thereto.

[0054] In some embodiments, the manufacturing method 1 of the electronic device according to the embodiments of the present invention may further include a liquid crystal injection process. The liquid crystal injection process may be performed after step S106, between step S105 and step S106, or between step S104 and step S105. In an embodiment where the liquid crystal injection process is performed after step S106, the liquid crystal molecules 1021 are slowly sucked between the first substrate 1011 and the second substrate 1031 according to the principle of vacuum capillary action. In an embodiment where the liquid crystal injection process is performed between step S105 and step S106, the liquid crystal molecules 1021 are slowly sucked between the first mother substrate 101 and the second mother substrate 103 of the mother substrate element 10 according to the principle of vacuum capillary action. In an embodiment where the liquid crystal injection process is performed between step S104 and step S105, the liquid crystal molecules 1021 may be formed between the first mother substrate 101 and the second mother substrate 103 of the mother substrate element 10 by first dropping the liquid crystal by the One Drop Filling (ODF) method on the first mother substrate 101 and / or the second mother substrate 103 and then assembling the first mother substrate 101 and the second mother substrate 103.

[0055] Figure 4 is a cross-sectional view of the electronic device 10' according to the embodiments of the present invention. As Figure 4 shown, the electronic device 10' may include a first substrate 1011, a second substrate 1031 opposite to the first substrate 1011, a liquid crystal layer 102 located between the first substrate 1011 and the second substrate 1031 and including liquid crystal molecules 1021, a recombination alignment mark group 107 provided in the first substrate 1011 and the second substrate 1031, and an optical layer alignment mark 104 provided in the first substrate 1011, but the present invention is not limited thereto. In some embodiments, for example, in an embodiment where the electronic device 10' is a non-liquid crystal device, the liquid crystal layer 102 may be omitted. In some embodiments, the optical layer alignment mark 104 may be omitted. The recombination alignment mark group 107 includes a coarse alignment mark group and a fine alignment mark group different from the coarse alignment mark group.

[0056] The above has described the respective step flows of the manufacturing method 1 of the electronic device according to the embodiments of the present invention in sequence, but the manufacturing method of the electronic device according to the embodiments of the present invention is not limited to the manufacturing method 1 of the electronic device described in combination with Figures 1 to 4 The steps in the manufacturing method of the electronic device according to the embodiments of the present invention may be executed in another logical order. Figure 1 The manufacturing method 1 of the electronic device. Figure 5 is a flowchart of the manufacturing method 2 of the electronic device according to another embodiment of the present invention, where the order of step execution is different from that of the manufacturing method 1 of the electronic device described in combination with Figure 1 The manufacturing method 1 of the electronic device described above. Figure 6 is a flowchart of the manufacturing method 2 of the electronic device according to another embodiment of the present invention, where the order of step execution is different from that of the manufacturing method 1 of the electronic device described in combination with Figure 1The manufacturing method 1 of the electronic device described above is a flowchart of a different manufacturing method 3 of an electronic device according to another embodiment of the present invention.

[0057] As Figure 5 shown, the manufacturing method 2 of the electronic device according to an embodiment of the present invention includes a step S201 of providing a first mother substrate, a step S202 of providing a second mother substrate, a step S203 of forming a mother substrate alignment mark group, a step S204 of forming mother substrate elements, a step S205 of forming a recombined alignment mark group, and a step S206 of cutting the mother substrate elements. Except that the step S205 of forming the recombined alignment mark group is executed after the step S204 of forming the mother substrate elements and before the step S206 of cutting the mother substrate elements, the manufacturing method 1 of the electronic device is actually the same as the manufacturing method 2 of the electronic device, so the steps of the manufacturing method 2 of the electronic device will not be described in detail here.

[0058] As Figure 6 shown, the manufacturing method 3 of the electronic device according to an embodiment of the present invention includes a step S301 of providing a first mother substrate, a step S302 of providing a second mother substrate, a step S303 of forming a mother substrate alignment mark group, a step S304 of forming mother substrate elements, a step S305 of cutting the mother substrate elements, and a step S306 of forming a recombined alignment mark group. Except that the step S306 of forming the recombined alignment mark group is executed after the step S305 of cutting the mother substrate elements, the manufacturing method 1 of the electronic device is actually the same as the manufacturing method 3 of the electronic device, so the steps of the manufacturing method 3 of the electronic device will not be described in detail here.

[0059] In some embodiments, the manufacturing method 3 of the electronic device may further include an inspection step before the step S306 of forming the recombined alignment mark group and after the step S305 of cutting the mother substrate elements. Specifically, the inspection step can be carried out after the manufacturing of the electronic device is completed. For example, in an embodiment where the manufacturing of the electronic device is completed after the step S305, the inspection step can be carried out continuously after the step S305, and in an embodiment where the manufacturing of the electronic device is completed after injecting liquid crystal molecules 1021, the inspection step can be carried out continuously after injecting the liquid crystal molecules 1021. In one embodiment, the step S306 of forming the recombined alignment mark group may be executed only on the electronic devices with defects found during the inspection step, but the present invention is not limited thereto.

[0060] Another aspect of the present invention provides another manufacturing method of an electronic device. Figure 7It is a flowchart of Manufacturing Method 4 of an electronic device according to an embodiment of the present invention. Manufacturing Method 4 of an electronic device is a manufacturing method of recycling an electronic device with a reorganized alignment mark group and then manufacturing a new electronic device. This method can recycle and remanufacture defective electronic devices to reduce the production cost of electronic devices.

[0061] As Figure 7 shown, Manufacturing Method 4 of an electronic device according to an embodiment of the present invention includes step S401 of providing a recycled electronic device, step S403 of separating a first substrate and a second substrate of the recycled electronic device, and step S405 of reassembling the first substrate and the second substrate.

[0062] The recycled electronic device provided in step S401 includes a first substrate and a second substrate, and a reorganized alignment mark group is provided in the first substrate and the second substrate. In some embodiments, the recycled electronic device is an electronic device manufactured by any one of Manufacturing Methods 1 to 3 of the electronic device according to the embodiments of the present invention, but the present invention is not limited thereto. In some embodiments, the recycled electronic device may have a structure as Figure 4 shown, but the present invention is not limited thereto. For a better understanding of the content of the present invention, the following further describes Manufacturing Method 4 of an electronic device according to an embodiment of the present invention in conjunction with Figure 4 this.

[0063] As Figure 4 and Figure 7 shown, the electronic device 10' provided in step S401 includes a first substrate 1011, a second substrate 1031 opposite to the first substrate 1011, a liquid crystal layer 102 between the first substrate 1011 and the second substrate 1031, an optical layer alignment mark 104 in the first substrate 1011, and a reorganized alignment mark group 107 in the first substrate 1011 and the second substrate 1031. The reorganized alignment mark group 107 includes a coarse alignment mark group and a fine alignment mark group. The coarse alignment mark group includes a first coarse alignment mark 1071 in the first substrate 1011 and a second coarse alignment mark 1071' in the second substrate 1031 corresponding to the first coarse alignment mark 1071 in the first substrate 1011. The fine alignment mark group includes a first fine alignment mark 1073 in the first substrate 1011 and a second fine alignment mark 1073' in the second substrate 1031 corresponding to the first fine alignment mark 1073 in the first substrate 1011. The first substrate 1011, the second substrate 1031, the liquid crystal layer 102, and the reorganized alignment mark group 107 are actually the same as those described in Manufacturing Methods 1 to 3 of the above-mentioned electronic device, so they will not be described in detail here.

[0064] The first substrate 1011 and the second substrate 1031 of the recycled electronic device 10' can be separated in a non-fragmented manner in step S402. After separation, the first substrate 1011 and the second substrate 1031 remain intact, and the recombined alignment mark group 107 and other structures or layers therein are not damaged. In some embodiments, the manufacturing method 4 of the electronic device may include, after step S403 of separating the first substrate 1011 and the second substrate 1031, removing the liquid crystal layer 102 in the recycled electronic device 10' and cleaning the first substrate 1011 and the second substrate 1031. The specific steps and details of separating the first substrate 1011 and the second substrate 1031 of the electronic device 10' in a non-fragmented manner, removing the liquid crystal layer 102, and cleaning the first substrate 1011 and the second substrate 1031 can be combined with Chinese CN116140326A, the entire content of which is incorporated herein by reference.

[0065] Then, in step S403, the first substrate 1011 and the second substrate 1031 are reassembled according to the recombined alignment mark group 107 in the first substrate 1011 and the second substrate 1031 to complete the manufacture of a new electronic device. As long as the recombined alignment mark group 107 in the first substrate 1011 and the second substrate 1031 still exists, the electronic device manufactured by the manufacturing method 4 of the electronic device according to the embodiment of the present invention can be further recycled to manufacture a new electronic device.

[0066] In certain embodiments, when the electronic device 10' provided in step S401 only includes the first substrate 1011, the second substrate 1031 opposite to the first substrate 1011, the liquid crystal layer 102 located between the first substrate 1011 and the second substrate 1031, and the optical layer alignment mark 104 located in the first substrate 1011, that is, the first substrate and the second substrate of the electronic device 10' do not have the recombined alignment mark group 107. Before performing step S402 to separate the first substrate 1011 and the second substrate 1031, an injection process of the recombined alignment mark group 107 (such as Figure 6 step S306) can be performed to make the first substrate 1011 and the second substrate 1031 of the electronic device 10' have the recombined alignment mark group 107. Then, steps S402 and S403 are executed.

[0067] In summary, since the electronic devices manufactured by any one of the manufacturing methods 1 to 3 of the electronic device according to the embodiments of the present invention all have a reorganized alignment mark group. Therefore, the electronic devices manufactured by any one of the manufacturing methods 1 to 3 of the electronic device according to the embodiments of the present invention can be simply remanufactured into new electronic devices according to the manufacturing method 4 of the electronic device according to the embodiments of the present invention after recycling. Accordingly, any one of the manufacturing methods 1 to 4 of the electronic device according to the embodiments of the present invention can be used to manufacture electronic devices that are environmentally friendly, have a simple recycling process, and / or have low production costs.

[0068] Although the embodiments of the present invention and their advantages have been disclosed above, it should be understood that any person skilled in the art can make changes, substitutions, and modifications without departing from the spirit and scope of the present invention. In addition, the protection scope of the present invention is not limited to the processes, machines, manufactures, compositions of matter, devices, methods, and steps in the specific embodiments described in the specification. Those skilled in the art can understand the processes, machines, manufactures, compositions of matter, devices, methods, and steps developed currently or in the future from the disclosure of some embodiments of the present invention. As long as they can perform substantially the same functions or obtain substantially the same results in the embodiments described herein, they can be used according to some embodiments of the present invention. Therefore, the protection scope of the present invention includes the above-mentioned processes, machines, manufactures, compositions of matter, devices, methods, and steps. In addition, each claim for patent constitutes an individual embodiment, and the protection scope of the present invention also includes the combination of each claim for patent and embodiment.

Claims

1. A manufacturing method of an electronic device, comprising: providing a first mother substrate, the first mother substrate including a plurality of first substrates; providing a second mother substrate, the second mother substrate including a plurality of second substrates; forming a mother substrate alignment mark group in the first mother substrate and the second mother substrate, wherein the mother substrate alignment mark group is not located in the plurality of first substrates and the plurality of second substrates; forming a recombination alignment mark group in each of the plurality of first substrates and each of the plurality of second substrates; assembling the first mother substrate and the second mother substrate according to the mother substrate alignment mark group to form a mother substrate element; and cutting the mother substrate element along the boundaries of each of the first substrates and each of the second substrates.

2. The manufacturing method of an electronic device according to claim 1, wherein, the step of forming the recombination alignment mark group is performed after the step of forming the mother substrate element and before the step of cutting the mother substrate element.

3. The manufacturing method of an electronic device according to claim 1, wherein, the step of forming the recombination alignment mark group is performed before the step of forming the mother substrate element.

4. The manufacturing method of an electronic device according to claim 1, wherein, the step of forming the recombination alignment mark group is performed after the step of cutting the mother substrate element.

5. The manufacturing method of an electronic device according to claim 1, wherein, the step of forming the recombination alignment mark group is performed simultaneously with the step of forming the mother substrate alignment mark group.

6. The manufacturing method of an electronic device according to claim 1, wherein, the recombination alignment mark group is formed in each of the first substrates and each of the second substrates through a laser marking process.

7. The manufacturing method of an electronic device according to claim 1, wherein, the recombination alignment mark group includes a coarse alignment mark group, the coarse alignment mark group including a first coarse alignment mark located in the first substrate and a second coarse alignment mark located in the second substrate and corresponding to the first coarse alignment mark.

8. The manufacturing method of an electronic device according to claim 7, wherein, the first coarse alignment mark and the second coarse alignment mark respectively have a maximum width of 290 μm - 510 μm.

9. The manufacturing method of an electronic device according to claim 7, wherein, the recombination alignment mark group further includes a fine alignment mark group, the fine alignment mark group including a plurality of first fine alignment marks located in the first substrate and a plurality of second fine alignment marks located in the second substrate and corresponding to the plurality of first fine alignment marks.

10. The manufacturing method of an electronic device according to claim 9, wherein, the first fine alignment mark and the second fine alignment mark respectively have a maximum width of 45 μm - 155 μm.

11. A manufacturing method of an electronic device, comprising: providing a recycled electronic device, the recycled electronic device including a first substrate and a second substrate, and a recombination alignment mark group being provided in the first substrate and the second substrate; Separate the first substrate and the second substrate of the recycled electronic device; and Reassemble the first substrate and the second substrate according to the reorganized alignment mark group.

12. The method for manufacturing an electronic device according to claim 11, wherein, The recycled electronic device is obtained by the method for manufacturing an electronic device according to any one of claims 1 to 10.

13. An electronic device, comprising: a first substrate; a second substrate, relative to the first substrate; and a reorganized alignment mark group disposed in the first substrate and the second substrate.

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