A method and system for predicting the performance of a semiconductor device

Abstract

The present application provides a method and system for predicting the performance of a semiconductor device, relating to the technical field of semiconductor devices, including reading a three-dimensional structure model of the semiconductor device; performing an initial division on the three-dimensional structure model to obtain a number of initial meshes; constructing feature points based on the index relationship of the initial meshes; wherein, in different initial meshes, the feature points corresponding to the same basic feature coincide; the feature points include one or more of volume feature points, surface feature points, and edge feature points; combining the original nodes and feature points corresponding to the initial meshes, dividing the initial meshes into a number of final meshes; after all the initial meshes are divided, summarizing all the final meshes to obtain a target structure model, completing the division of the three-dimensional structure model, so as to reduce the calculation amount and improve the prediction rate when generating performance data for optimizing performance design.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular, to a method, a system, an electronic device, a computer storage medium, and a computer program product for predicting the performance of a semiconductor device. Background Art

[0002] A semiconductor device is an electronic device that has electrical conductivity between that of a good conductor and an insulator and utilizes the special electrical properties of semiconductor materials to perform specific functions.

[0003] In order to improve the performance design of semiconductor devices in terms of photoelectric conversion efficiency, response speed, energy consumption control, and device stability, it is necessary to evaluate the performance of semiconductor devices. Among them, the generation process of photo-generated carriers is an important factor in the performance of semiconductor devices. Therefore, accurately predicting the generation rate of photo-generated carriers in semiconductor devices is of great significance for optimizing the design of semiconductor devices and improving device performance.

[0004] However, existing prediction methods mainly rely on a variety of numerical simulation methods, which generally face problems such as a large amount of calculation, a long calculation time, and insufficient accuracy.

[0005] A method, a system, an electronic device, a computer storage medium, and a computer program product for predicting the performance of a semiconductor device are hereby proposed. Summary of the Invention

[0006] This specification provides a method, a system, an electronic device, a computer storage medium, and a computer program product for predicting the performance of a semiconductor device. By subdividing a three-dimensional structure model into final meshes, it can flexibly handle non-uniform and complex geometric structures, which helps to overcome the limitations of the transfer matrix method when dealing with such structures; when predicting performance data in combination with ray tracing technology, the amount of calculation is reduced by reducing unnecessary acceleration structure construction and complex intersection detection; the prediction efficiency and accuracy are improved by directly performing intersection on the subdivided final meshes.

[0007] A method for dividing a model of a semiconductor device provided in this application adopts the following technical solutions, including:

[0008] Read the three-dimensional structure model of the semiconductor device;

[0009] Perform an initial division on the three-dimensional structure model to obtain a number of initial meshes;

[0010] Construct feature points based on the index relationship of the initial meshes; wherein, in different initial meshes, the feature points corresponding to the same basic feature coincide; the feature points include one or more of volume feature points, surface feature points, and edge feature points;

[0011] Divide the initial mesh into a number of final meshes by combining the original nodes and feature points corresponding to the initial mesh;

[0012] After all the initial meshes are divided, summarize all the final meshes to obtain the target structure model, and complete the division of the three-dimensional structure model.

[0013] Optionally, the initial division of the three-dimensional structure model to obtain a number of initial meshes includes:

[0014] Obtain the division attribute value input by the user as a configuration parameter;

[0015] Perform finite element mesh division on the three-dimensional structure model based on the configuration parameter to obtain a number of the initial meshes.

[0016] Optionally, the volume feature point is the centroid of the initial mesh; and / or,

[0017] The surface feature point is the centroid of the original surface of the initial mesh; and / or,

[0018] The edge feature point is the midpoint of the original edge of the initial mesh.

[0019] Optionally, the step of dividing the initial mesh into a number of final meshes by combining the original nodes and feature points corresponding to the initial mesh includes:

[0020] Determine the current original node;

[0021] Judge whether the node index number of the current original node exceeds the maximum node index;

[0022] If the node index number does not exceed the maximum node index, search for the target feature point associated with the current original node;

[0023] Construct the final mesh by combining the current original node, the corresponding set of target feature points and the preset topological relationship.

[0024] Optionally, after constructing the final mesh by combining the current original node, the corresponding set of target feature points and the preset topological relationship, it further includes:

[0025] Judge whether the current original node is the last original node in the list of original nodes;

[0026] If so, judge whether the current initial mesh is the last initial mesh in the list of initial meshes. If so, it indicates that all the initial meshes have been divided; otherwise, take the next initial mesh of the current initial mesh as the new current initial mesh;

[0027] Otherwise, use the next original node of the current original node as the new current original node.

[0028] An application method for model partitioning provided by this application predicts the performance of semiconductor devices based on the target structure model obtained by the aforementioned model partitioning method, and adopts the following technical solutions, including:

[0029] Extract the light information of the illuminating light and the target structure model of the semiconductor device; the target structure model includes a number of final meshes.

[0030] Based on the intersection of the light information and the final meshes, determine the first intersection point.

[0031] Update the light information according to the reflection result of the illuminating light at the first intersection point.

[0032] Find the first final mesh corresponding to the first intersection point, simulate the light trace of the illuminating light in the first final mesh in combination with the light information, and determine the second intersection point and the performance data of the second intersection point.

[0033] If the second basic surface where the second intersection point is located is of the target type, obtain the performance data of the semiconductor device in combination with the simulation result and / or performance data of the light tracing.

[0034] A model partitioning system for a semiconductor device provided by this application adopts the following technical solutions, including:

[0035] A reading module for reading the three-dimensional structure model of the semiconductor device.

[0036] An initial partitioning module for initially partitioning the three-dimensional structure model to obtain a number of initial meshes.

[0037] A feature point construction module for constructing feature points based on the index relationship of the initial meshes; among them, in different initial meshes, the feature points corresponding to the same basic feature coincide; the feature points include one or more of volume feature points, surface feature points, and edge feature points.

[0038] A final partitioning module for partitioning the initial meshes into a number of final meshes in combination with the original nodes and feature points corresponding to the initial meshes.

[0039] A summarizing module for summarizing all the final meshes to obtain a target structure model after all the initial meshes are partitioned, and completing the partitioning of the three-dimensional structure model.

[0040] Optionally, the initial partitioning module includes:

[0041] A configuration sub-module, configured to obtain the partition attribute value input by the user as a configuration parameter;

[0042] An initial partitioning sub-module, configured to perform finite element mesh partitioning on the three-dimensional structure model based on the configuration parameter to obtain a plurality of the initial meshes.

[0043] Optionally, the body feature point is the centroid of the initial mesh;

[0044] Optionally, the face feature point is the centroid of the original face of the initial mesh;

[0045] Optionally, the edge feature point is the midpoint of the original edge of the initial mesh.

[0046] Optionally, the final partitioning module includes:

[0047] A node determination sub-module, configured to determine the current original node;

[0048] A first judgment sub-module, configured to judge whether the node index number of the current original node exceeds the maximum node index value;

[0049] If the node index number does not exceed the maximum node index value, search for the target feature point associated with the current original node;

[0050] Construct the final mesh by combining the current original node, the corresponding target feature point set and the preset topological relationship.

[0051] Optionally, the final partitioning module further includes:

[0052] A second judgment sub-module, configured to judge whether the current original node is the last original node in the original node list;

[0053] If so, judge whether the current initial mesh is the last initial mesh in the initial mesh list. If so, it indicates that all the initial meshes have been partitioned; otherwise, use the next initial mesh of the current initial mesh as the new current initial mesh;

[0054] Otherwise, use the next original node of the current original node as the new current original node.

[0055] An application system for model partitioning provided by the present application, based on the target structure model obtained by the foregoing model partitioning method, predicts the performance of semiconductor devices, and adopts the following technical solutions, including:

[0056] An extraction module, configured to extract the light information of the irradiated light and the target structure model of the semiconductor device; the target structure model includes a plurality of final meshes;

[0057] An intersection processing module, configured to determine a first intersection point based on the intersection situation between the ray information and the final mesh;

[0058] A reflection processing module, configured to update the ray information according to the reflection result of the irradiation ray at the first intersection point;

[0059] A tracing and predicting module, configured to find a first final mesh corresponding to the first intersection point, simulate the ray trace of the irradiation ray in the first final mesh in combination with the ray information, and determine a second intersection point and performance data of the second intersection point;

[0060] An obtaining module, configured to, if the second basic surface where the second intersection point is located is of a target type, obtain the performance data of the semiconductor device by combining the simulation result and / or performance data of the ray tracing.

[0061] This specification also provides an electronic device, where the electronic device includes:

[0062] A processor; and,

[0063] A memory storing computer-executable instructions, where the executable instructions, when executed, cause the processor to execute any one of the above methods.

[0064] This specification also provides a computer-readable storage medium, where the computer-readable storage medium stores one or more programs, and when the one or more programs are executed by a processor, any one of the above methods is implemented.

[0065] This specification also provides a computer program product, where the computer program product includes: a computer program / instructions, and when the computer program / instructions are executed by a processor, any one of the above methods is implemented.

[0066] In this application, by reading the three-dimensional structure model of a semiconductor device; performing an initial division on the three-dimensional structure model to obtain a number of initial meshes; constructing feature points based on the index relationship of the initial meshes; where in different initial meshes, the feature points corresponding to the same basic feature coincide, so as to avoid the geometric feature misalignment caused by the local mesh independence in the traditional mesh division; the feature points include one or more of volume feature points, surface feature points, and edge feature points; combining the original nodes and feature points corresponding to the initial meshes, dividing the initial meshes into a number of final meshes; after all the initial meshes are divided, aggregating all the final meshes to obtain a target structure model, completing the division of the three-dimensional structure model, so as to reduce the calculation amount when generating performance data for optimizing performance design; and improving the prediction rate in the process of simulating the propagation process of light in the semiconductor device and predicting the generation rate of carriers based on the ray tracing technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0067] Figure 1 It is a schematic diagram of the principle of a method for model partitioning of a semiconductor device provided by an embodiment of this specification;

[0068] Figure 2 It is a related schematic diagram of dividing a tetrahedron into a hexahedron;

[0069] Figure 3 It is a schematic flow chart of steps S3 - S4 of a method for model partitioning of a semiconductor device provided by an embodiment of this specification Figure 1 ;

[0070] Figure 4 It is a schematic diagram of the structure of the second partitioning of a method for model partitioning of a semiconductor device provided by an embodiment of this specification;

[0071] Figure 5 It is a schematic diagram of the structure of the final grid of a method for model partitioning of a semiconductor device provided by an embodiment of this specification;

[0072] Figure 6 It is a schematic flow chart of steps S3 - S4 of a method for model partitioning of a semiconductor device provided by an embodiment of this specification Figure 2 ;

[0073] Figure 7 It is a schematic diagram of the principle of an application method of model partitioning provided by an embodiment of this specification;

[0074] Figure 8 It is a schematic diagram of the structure of a model partitioning system of a semiconductor device provided by an embodiment of this specification;

[0075] Figure 9 It is a schematic diagram of the structure of an application system of model partitioning provided by an embodiment of this specification;

[0076] Figure 10 It is a schematic diagram of the structure of an electronic device provided by an embodiment of this specification;

[0077] Figure 11 It is a schematic diagram of the structure of a computer - readable storage medium provided by an embodiment of this specification. DETAILED DESCRIPTION OF THE INVENTION

[0078] The following description is used to disclose the present invention so that those skilled in the art can implement the present invention. The preferred embodiments described below are only examples, and other obvious variations can be thought of by those skilled in the art. The basic principles defined in the following description can be applied to other embodiments, variants, improvements, equivalent schemes, and other technical schemes that do not depart from the spirit and scope of the present invention.

[0079] Exemplary embodiments of the present invention will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. On the contrary, providing these exemplary embodiments enables the present invention to be more complete and comprehensive, and more conveniently conveys the inventive concept to those skilled in the art. Identical reference numerals in the figures denote the same or similar elements, components, or parts, and thus repeated descriptions thereof will be omitted.

[0080] Under the premise of conforming to the technical concept of the present invention, the features, structures, characteristics, or other details described in a specific embodiment are not excluded from being combined in a suitable manner in one or more other embodiments.

[0081] In the description of specific embodiments, the features, structures, characteristics, or other details described in the present invention are for enabling those skilled in the art to fully understand the embodiments. However, it does not exclude that those skilled in the art can practice the technical solutions of the present invention without one or more of the specific features, structures, characteristics, or other details.

[0082] The flowcharts shown in the accompanying drawings are merely illustrative and do not necessarily include all the contents and operations / steps, nor are they necessarily executed in the described order. For example, some operations / steps can be decomposed, while some operations / steps can be combined or partially combined, so the actual execution order may change according to the actual situation.

[0083] The block diagrams shown in the accompanying drawings are merely functional entities and do not necessarily correspond to physically independent entities. That is, these functional entities can be implemented in software form, or implemented in one or more hardware modules or integrated circuits, or implemented in different networks and / or processor devices and / or microcontroller devices.

[0084] The term "and / or" or "and / or" includes all combinations of any one or more of the associated listed items.

[0085] If the technical solution of this application involves personal information, before the product applying the technical solution of this application processes personal information, it has clearly informed the personal information processing rules and obtained the autonomous consent of the individual. If the technical solution of this application involves sensitive personal information, before the product applying the technical solution of this application processes sensitive personal information, it has obtained the individual's separate consent and at the same time meets the requirement of "express consent".

[0086] Figure 1 It is a schematic diagram of the principle of a method for partitioning a model of a semiconductor device provided for the embodiments of this specification. The method includes:

[0087] S1 Reads the three-dimensional structure model of the semiconductor device;

[0088] S2 Performs an initial division on the three-dimensional structure model to obtain a number of initial meshes;

[0089] S3 Constructs feature points based on the index relationship of the initial meshes; wherein, in different initial meshes, the feature points corresponding to the same basic feature coincide; the feature points include one or more of volume feature points, surface feature points, and edge feature points;

[0090] S4 Combines the original nodes and feature points corresponding to the initial meshes, and divides the initial meshes into a number of final meshes according to a preset topological relationship;

[0091] S5 After all the initial meshes are divided, aggregates all the final meshes to obtain a target structure model, completing the division of the three-dimensional structure model.

[0092] Semiconductor materials, due to their unique electrical and optical properties, have become indispensable basic materials in modern electronics, optoelectronics, energy conversion, communication and other fields, and are widely used in semiconductor devices. For example, common semiconductor materials such as silicon (Si), gallium arsenide (GaAs), cadmium telluride (CdTe), etc. are widely used in various semiconductor devices such as integrated circuits, solar cells, photodetectors, lasers, light-emitting diodes (LEDs), and photoelectric sensors.

[0093] With the continuous progress of technology, it is necessary to improve the performance requirements of semiconductor devices in aspects such as photoelectric conversion efficiency, response speed, energy consumption control, and device stability. Among them, in semiconductor optoelectronic devices, their performance is decisively related to the generation, migration, and recombination processes of photo-generated carriers (including photo-generated electrons and photo-generated holes).

[0094] That is to say, the generation process of photo-generated carriers is an important factor in the performance of semiconductor devices. Therefore, accurately quantifying the generation rate of photo-generated carriers has become one of the core tasks for optimizing device performance.

[0095] Currently, the prediction of the generation rate of photo-generated carriers mainly relies on various numerical simulation methods such as the transfer matrix method and the finite-difference time-domain method. However, the related numerical simulation methods mainly have the following problems:

[0096] (1) The transfer matrix method calculates the propagation and distribution of light in a semiconductor device by constructing the optical transfer matrices of each layer in a multi-layer structure to describe the reflection and transmission behaviors of light between different layers. This method is applicable to periodic and layered structures, has high calculation efficiency, and is easy to implement. For non-uniform, complex geometric structures and multi-dimensional light propagation problems, the applicability of the transfer matrix method is limited.

[0097] (2) The finite-difference time-domain (FDTD) method discretizes Maxwell's equations in the time domain and spatial domain to simulate the propagation, reflection, refraction, and scattering processes of electromagnetic waves in a medium. This method has high time-domain and spatial-domain resolution, can simulate complex electromagnetic phenomena, and is applicable to various optical materials and structures. When dealing with large-scale devices and high-resolution requirements, the FDTD method consumes a large amount of computing resources and has low computational efficiency. In addition, this method faces challenges in accurately describing the carrier generation and recombination mechanisms and is difficult to comprehensively capture the microscopic carrier behavior.

[0098] Therefore, existing prediction methods for the optical carrier generation rate generally face problems such as a large amount of computation, long computation time, and insufficient accuracy when dealing with complex geometric structures, high-frequency dynamic processes, and multi-physics field coupling. There is an urgent need to develop more efficient and accurate computational methods to overcome the existing limitations.

[0099] Ray tracing technology shows significant advantages in optical simulations. Therefore, the present invention considers applying ray tracing technology to the prediction / calculation of the semiconductor optical carrier rate. However, it still faces many challenges, including: being unable to handle complex boundary conditions; being unable to effectively achieve multi-physics field coupling, etc.

[0100] Based on this, in order to effectively integrate ray tracing technology into the prediction method of the optical carrier generation rate of semiconductor devices to reduce the computational complexity and improve the prediction effect, the present invention proposes a model partitioning method for semiconductor devices, which specifically includes:

[0101] S1 Read the three-dimensional structure model of the semiconductor device;

[0102] Obtain the physical structure data of the semiconductor device; construct the three-dimensional structure model of the semiconductor device according to the physical structure data.

[0103] Among them, the physical structure data includes but is not limited to: the size of the semiconductor device, the material of the semiconductor device.

[0104] The fusion modeling based on multi-dimensional physical characteristics (size, material) provides a basis for the simulation of complex optical effects (such as refraction, absorption), ensuring the reliability of subsequent analysis.

[0105] S2 Perform an initial partition on the three-dimensional structure model to obtain a number of initial grids;

[0106] Through the initial partition, the complex three-dimensional structure model is simplified into multiple initial grids that are easier to handle. Through the partition parameters configured by the user, the partition method of the grid can be flexibly adjusted to adapt to different analysis requirements, thereby improving the processing ability for complex geometric shapes.

[0107] S21 Obtain the partition attribute value input by the user as a configuration parameter;

[0108] S211 Pre - construct several partition parameters; the partition parameters include, but are not limited to: element type, mesh density, interval.

[0109] Among them, the element type is used to determine what type of geometric elements the three - dimensional structure model is divided into. The mesh density is used to control the density of the meshes after division. The interval is used to determine the gap between elements or a specific division spacing.

[0110] S212 Based on the first partition instruction, display a configuration interface to the user. The configuration interface shows the partition parameters and the corresponding parameter selection areas. The parameter selection areas are used for the user to configure (input / select) the partition parameter values corresponding to the partition parameters.

[0111] In an embodiment of this specification, the parameter selection area corresponding to the element type is a drop - down menu. The drop - down menu shows all the element type options. Among them, in order to improve the calculation efficiency, the element type options include: the first element type. The first element type is used to represent dividing the three - dimensional structure model into hexahedral meshes.

[0112] In order to flexibly fill irregular regions and improve the processing ability for complex geometric shapes, the element type options also include: the second element type. The second element type is used to represent dividing the three - dimensional structure model into tetrahedral meshes. The specific implementation manner of the present invention mainly takes tetrahedral meshes (initial meshes) as an example.

[0113] The parameter selection area corresponding to the mesh density is a numerical input box, allowing the user to input a number or select a preset density level.

[0114] The parameter selection area corresponding to the interval is a numerical input box, allowing the user to input a number or select a preset interval.

[0115] S213 After the user finishes inputting / selecting in the parameter selection area, based on the user's parameter submission instruction, obtain the partition parameter values configured by the user as configuration parameters;

[0116] S22 Perform finite - element mesh division on the three - dimensional structure model based on the configuration parameter to obtain several of the initial meshes.

[0117] Input the configuration parameter into the finite - element analysis tool, and automatically perform the first mesh division on the three - dimensional structure model through the finite - element analysis tool to divide it into several hexahedral meshes / tetrahedral meshes.

[0118] Among them, the finite element analysis tools include but are not limited to: ANSYS, ABAQUS, COMSOL, etc. The finite element analysis tools belong to the prior art, and the specific analysis process will not be elaborated here.

[0119] In an embodiment of the present specification, when the unit type selected by the user is the first unit type, finite element mesh division is performed on the three-dimensional structure model to construct a number of hexahedron meshes. At this time, the initial mesh is a hexahedron mesh.

[0120] In another embodiment of the present specification, when the unit type selected by the user is the second unit type, finite element mesh division is performed on the three-dimensional structure model to construct a number of tetrahedron meshes. At this time, the initial mesh is a tetrahedron mesh.

[0121] S23 Construct an initial mesh list;

[0122] S231 Based on the coordinate system of the three-dimensional structure model, determine the coordinates of each vertex; obtain the coordinates of all vertices and the number of initial meshes;

[0123] S232 Traverse each initial mesh and establish the corresponding relationships between the initial mesh and the original nodes, original edges, and original faces:

[0124] S232-1 Determine the basic features of the initial mesh;

[0125] Among them, the vertices of the initial mesh are used as the original nodes; the edges of the initial mesh are used as the original edges; the faces of the initial mesh are used as the original faces. The basic features include: all the original nodes corresponding to the initial mesh, all the original edges corresponding to the initial mesh, and all the original faces corresponding to the initial mesh.

[0126] S232-2 Establish the first corresponding relationship between the initial mesh and the original nodes, and the first corresponding relationship is used to represent each original node corresponding to each initial mesh;

[0127] For example, when the initial mesh is a tetrahedron mesh, the original nodes and their node coordinates of the current initial mesh include: ( , , ), ( , , ), ( , , ), ( , , );

[0128] S232-3 Establish a second correspondence between the initial meshes and the original edges, where the second correspondence is used to represent each original edge corresponding to each initial mesh;

[0129] S232-4 Establish a third correspondence between the initial meshes and the original faces, where the third correspondence is used to represent each original face corresponding to each initial mesh;

[0130] S232-5 Aggregate the first correspondence, the second correspondence, and the third correspondence to construct the index relationship of the initial meshes;

[0131] Based on the index relationship, each basic feature corresponding to each initial mesh and the material information of each original face can be found.

[0132] Subsequent operations will be performed on each initial mesh in the present invention. Therefore, for the convenience of subsequent processing, all the index relationships are aggregated to construct a list of initial meshes. The list of initial meshes is used to represent the mapping relationship between the initial meshes and the index relationships.

[0133] Preferably, a mesh index number is assigned to each initial mesh. In an embodiment of the present specification, the mesh index number is a natural number starting from 1 and increasing incrementally, and the maximum value of the mesh index is the total number of initial meshes. The initial meshes in the list of initial meshes are sorted in ascending order according to the mesh index number. Of course, the initial meshes can also be sorted based on the adjacent relationship of each initial mesh to generate a list of initial meshes.

[0134] For the convenience of coupled simulation, in an embodiment of the present invention, the material information is determined based on the material to which each original face belongs; an association is established between the original faces and the material information of the original faces; the material information includes: the material refractive index and the material absorption coefficient of the material to which it belongs;

[0135] The partitioning method of the present invention supports the precise association of material information (material refractive index, material absorption coefficient), laying a foundation for subsequent coupled simulation of multiple physical fields (such as electric field, thermal field). For example, the refractive index fluctuation caused by temperature change can be realized by dynamically updating the material information (material refractive index, material absorption coefficient).

[0136] S3 Construct feature points based on the index relationship of the initial meshes;

[0137] When performing the second partitioning, the prior art usually divides tetrahedral meshes into hexahedral meshes. Its process mainly includes:

[0138] Select an initial mesh of a body center (generally the centroid or the circumcenter), and draw perpendicular lines from the body center to the four faces, as Figure 2As shown in (a), in the initial grid , , , are the feet of the perpendiculars. If a hexahedron is to be divided, then a point needs to be found on the edge such that , , , are coplanar.

[0139] As Figure 2 shown in (b), an adjacent initial grid to the initial grid , and the common original face of the two initial grids is . In the initial grid , if a hexahedron is to be divided, similarly, a point needs to be found on the edge to make the four points coplanar.

[0140] Generally, the of the initial grid may not coincide with . The center of the initial grid is at the foot of the perpendicular on the face and often does not coincide with either.

[0141] In this way, for the face , it will be divided into six sub - faces. As Figure 2 shown in (c), that is: the faces divided on the initial grid , , (red - line division). The faces divided on the initial grid , , (blue - line division).

[0142] The sub - face division result of the initial grid may not coincide with the sub - face division result of the initial grid .

[0143] Light passes through the initial grid and through the initial grid . Assuming the light passes through the face , after that, it is impossible to determine which face ( , , , In (), additional calculation and judgment are required to determine which surface is passed through.

[0144] Therefore, although the properties of the hexahedron mesh are relatively good, however, when the initial mesh is divided into finer hexahedron meshes, the ray tracing process is relatively complex. Therefore, as Figure 3 shown, the present invention will perform a second division on each initial mesh based on other methods to reduce the computational complexity.

[0145] S31 Initialize the basic surface list and the final mesh list;

[0146] Among them, the basic surface list is used to represent the mapping relationship between each basic surface and the surface information. The surface information includes but is not limited to: the material information of the basic surface; that is, according to the basic surface list, the corresponding surface information can be found based on the basic surface. The final mesh list is used to represent the mapping relationship between the final mesh and the basic surface, that is, according to the final mesh list, each final mesh can be found, as well as all the basic surfaces corresponding to each final mesh.

[0147] By initializing the basic surface list and the final mesh list, it is convenient to traverse the initial mesh and complete the division of the final mesh later.

[0148] S32 Traverse each initial mesh and find the feature points of each initial mesh;

[0149] S321 Take the first initial mesh in the initial mesh list as the current initial mesh; then execute step S322.

[0150] S322 Determine whether the mesh index number of the current initial mesh exceeds the maximum mesh index value; if so, return the basic surface list and the final mesh list; otherwise, execute step S323.

[0151] If the index information of the current initial mesh exceeds the maximum mesh index value, it indicates that subsequent operations cannot be performed on the current initial mesh.

[0152] S323 Based on the basic features of the current initial mesh, construct the feature points of the current initial mesh;

[0153] According to the index relationship of the current initial mesh, find the basic features of the current initial mesh; combine the basic features to create feature points. Among them, the feature points include one or more of volume feature points, surface feature points, and edge feature points.

[0154] S323-1 Construct the volume feature points of the current initial mesh;

[0155] For the convenience of space division, the volume feature points ( 、 、 is located inside the initial grid. Preferably, the volume feature point is the centroid of the current initial grid.

[0156] S323-2 Search for all the original faces of the current initial grid; determine the face feature points of each original face;

[0157] As mentioned above, if the face feature point is the orthocenter, the face feature points of multiple adjacent initial grids on the common original face generally do not coincide, and it is also necessary to additionally calculate which original face of the next initial grid the light will reach after passing through an initial grid, which significantly increases the subsequent workload.

[0158] Therefore, in order to eliminate the discontinuity of the common face of adjacent grids and reduce the face matching complexity during the light path penetration, the present invention makes the face feature points of adjacent initial grids coincide on the common original face, so that the division results of different initial grids on the common original face are consistent.

[0159] Preferably, the face feature point is the centroid of the original face; of course, the face feature point can also be the incenter of the original face.

[0160] In an embodiment of the present specification, as Figure 4 shown, when the current initial grid is a tetrahedral grid, the current initial grid includes four original faces: face , face , face , face . Among them, the face feature point of face is the centroid of face ; the face feature point of face is the centroid of face ; the face feature point of face is the centroid of face ; the face feature point of face is the centroid of .

[0161] S323-3 Search for all the original edges of the current initial grid; determine the edge feature points of each original edge;

[0162] Preferably, the edge feature point is the midpoint of the original edge.

[0163] In an embodiment of the present specification, when the current initial grid is a tetrahedral grid, the current initial grid includes six original edges: edge , edge , edge , edge , edge , edge 。

[0164] Among them, for side the side feature point is the midpoint of side ; for side the side feature point is the midpoint of side ; for side the side feature point is the midpoint of side ; for side the side feature point is the midpoint of side ; for side the side feature point is the midpoint of side ; for side the side feature point is the midpoint of side ; for side the side feature point is the midpoint of side ; for side the side feature point is the midpoint of side ; for side the side feature point is the midpoint of side 。

[0165] In the present invention, in different initial meshes, the feature points corresponding to the same basic feature coincide, so that the division of the common basic surface of the final mesh completely coincides; furthermore, based on the intersection points on the basic surface of the current final mesh, the basic surface of the next final mesh penetrated by the light is directly determined, reducing the complexity of calculation.

[0166] S4 Combine the original nodes and feature points corresponding to the initial mesh, and divide the initial mesh into a plurality of final meshes;

[0167] Traverse all the original nodes of the current initial mesh, and divide the current initial mesh based on each original node. Specifically:

[0168] S41 Based on the original nodes of the current initial mesh, construct a list of original nodes; then execute step S42.

[0169] Assign a node index number to each original node, and establish an index relationship for each original node of the current initial mesh based on the association relationship between the original node and the node index number.

[0170] In an embodiment of the present specification, the node index number is a natural number, and the node index numbers increase in sequence; the largest node index number (the total number of original nodes) is used as the node index maximum. The specific allocation method of the numbers is not limited herein.

[0171] Subsequent operations in the present invention will also be performed based on each original node respectively. Therefore, for the convenience of subsequent processing, a list of original nodes is constructed. The list of original nodes is used to represent the mapping relationship between the original nodes and the node index numbers. Preferably, the original nodes in the list of original nodes are arranged in ascending order according to the node index numbers.

[0172] S42 uses the first original node in the original node list as the current original node;

[0173] S43 determines whether the node index number of the current original node exceeds the maximum node index;

[0174] If so, execute step S32; otherwise, execute step S44.

[0175] S44 searches for the target feature points corresponding to the current original node;

[0176] If the node index number of the current original node does not exceed the maximum node index, search for the target feature points associated with the current original node; specifically:

[0177] S441 searches for target volume feature points according to the current initial grid where the current original node is located;

[0178] S442 retrieves the basic features of the current initial grid, and searches for target feature points according to the association relationship between the current original node and the basic features;

[0179] S442-1 searches for the original faces and / or original edges related to the current original node from the basic features of the current initial grid;

[0180] S442-2 searches for the corresponding face feature points based on the original faces related to the current original node, and takes them as the target face feature points;

[0181] S442-3 searches for the corresponding edge feature points based on the original edges related to the current original node, and takes them as the target edge feature points;

[0182] S442-4 aggregates all the target volume feature points, target face feature points and target edge feature points to construct a target feature point set.

[0183] In an embodiment of the present specification, the current original node is ;

[0184] Based on the current initial grid where the current original node is located and searches for the volume feature points corresponding to the current initial grid , and takes them as the target volume feature points.

[0185] The original faces related to the current original node include: original face and original face , .

[0186] The original edges related to the current original node include: original edge , Original edge , Original edge .

[0187] Among them, the target surface feature points of surface are surface feature points ; the target surface feature points of surface are surface feature points ; the target surface feature points of surface are surface feature points .

[0188] The target edge feature points of edge are edge feature points ; the target edge feature points of edge are edge feature points ; the target edge feature points of edge are edge feature points .

[0189] Therefore, the set of target feature points corresponding to the current node includes: , , , , , , .

[0190] S45 combines the current original node, the corresponding set of target feature points and the preset topological relationship to construct the final mesh.

[0191] In one embodiment of the present specification, the target volume feature points are respectively connected to each target surface feature point to construct basic edges; the target surface feature points are respectively connected to each target edge feature point to construct basic edges; the current original node is respectively connected to each target edge feature point to construct basic edges;

[0192] The target volume feature points are respectively connected to each target edge feature point to construct basic edges; after determining all the basic edges, according to the closed loops formed by the basic edges, the basic surfaces are obtained, and then the final mesh is obtained. Through the above feature point selection method, it is found that the divided final mesh is a nonahedron.

[0193] In another embodiment of the present specification, the target volume feature points are respectively connected to each target surface feature point to construct basic edges; the target surface feature points are respectively connected to each target edge feature point to construct basic edges; the current original node is respectively connected to each target edge feature point to construct basic edges;

[0194] The target volume feature points are respectively connected to each target edge feature point to construct implicit edges;

[0195] Such asFigure 5 As shown, after determining all the basic edges and implicit edges (orange dashed lines), a closed loop formed by the basic edges and / or implicit edges is obtained, and a basic surface is obtained. Find two basic surfaces that contain implicit edges;

[0196] Perform a coplanarity detection on the basic surfaces. Specifically, determine whether the two basic surfaces containing the same implicit edge are coplanar; if so, merge the two basic surfaces into one basic surface; remove the implicit edge; otherwise, use the implicit edge as a basic edge.

[0197] The shape of the final mesh may vary depending on the coplanarity of the feature points, including hexahedrons, heptahedrons, octahedrons, nonahedrons, etc. 、 、 、 are all located on the surface , so 、 、 、 are coplanar. 、 、 、 are all located on the surface , so 、 、 、 are coplanar. 、 、 、 are all located on the surface , so 、 、 、 are coplanar.

[0198] 、 、 、 may (not) be coplanar; 、 、 、 may (not) be coplanar; 、 、 、 may (not) be coplanar. Among them:

[0199] When all the above three groups are coplanar, the final mesh is a hexahedron. When two of them are coplanar, the final mesh is a heptahedron. When one of them is coplanar, the final mesh is an octahedron.

[0200] When none of them are coplanar, the final mesh is a nonahedron. For example, when , , , When they are non-coplanar, these four points form two triangles, namely triangle and triangle . When , , , are non-coplanar, these four points form two triangles, namely triangle and triangle . When , , , are non-coplanar, these four points form two triangles, namely triangle and triangle . The final mesh corresponding to the current node of the current initial mesh includes nine faces, namely 3 quadrilaterals and 6 triangles. At this time, the final mesh is a nonahedron.

[0201] Based on the above partitioning method, all other basic faces except those at the boundary can correspond to two final meshes. Through the mutual search between the basic faces and the final meshes, it can be known which final mesh the light will enter in the next stage after exiting one final mesh.

[0202] The present invention can flexibly handle non-uniform and complex geometric structures by constructing a subdivided nonahedron, which helps to overcome the limitations of the transfer matrix method in dealing with such structures.

[0203] S46 Add the final mesh to the final mesh list; add all the basic faces of the final mesh to the basic face list;

[0204] S461 Update the final mesh list according to the newly partitioned final mesh;

[0205] Obtain all the basic faces of the final mesh;

[0206] Establish a body-face correspondence relationship between the final mesh and the basic face; the body-face correspondence relationship is used to represent each basic face corresponding to each final mesh;

[0207] Add the body-face correspondence relationship to the final mesh list, and the final mesh list is used to represent the mapping relationship between each final mesh and the body-face correspondence relationship.

[0208] S462 Update the basic face list according to the newly partitioned final mesh;

[0209] Judge whether each basic face exists in the basic face list;

[0210] If the basic surface does not exist in the basic surface list, determine the original node corresponding to the basic surface, and use it as the node information; determine the material information of the basic surface; construct the surface information of the basic surface by combining the material information and the node information; add the basic surface and the corresponding surface information to the basic surface list. In an embodiment of this specification, it further includes: marking the basic surface as the first type; the first type is used to represent that the basic surface is the boundary surface of the three-dimensional structure model; that is, the basic surface corresponds to only one final mesh.

[0211] If the basic surface exists in the basic surface list, determine the original node corresponding to the basic surface, and use it as the node information; add the node information to the surface information of the basic surface. In an embodiment of this specification, it further includes: marking the basic surface as the second type; at this time, there is no need to add the basic surface repeatedly. The second type is used to represent that the basic surface is the common surface of the three-dimensional structure model; that is, the basic surface corresponds to two final meshes.

[0212] S47 Determine whether the current original node is the last original node in the original node list;

[0213] If so, execute step S48; otherwise, use the next original node of the current original node as the new current original node, and re-execute step S43.

[0214] In an embodiment of this specification, if the current original node is the last original node in the original node list, it means that the initial mesh of a tetrahedron has been divided into four parts and assigned to four nodes, that is, in the initial mesh each original node corresponds to one final mesh.

[0215] S48 Determine whether the current initial mesh is the last initial mesh in the initial mesh list; if so, it indicates that the division of all initial meshes is completed, and end the execution of step S4; otherwise, use the next initial mesh of the current initial mesh as the new current initial mesh, and re-execute step S32.

[0216] Based on the above operations of the present invention, each basic surface can correspond to one (when the basic surface belongs to the boundary surface) or two final meshes (when the basic surface belongs to the common surface).

[0217] The following combines Figure 6 to briefly describe steps S3 - S4:

[0218] ① Initialize the final mesh list, and the mesh index number i = 0;

[0219] ② Determine whether the grid index number i of the current initial grid exceeds the maximum grid index value (the total number of initial grids); if so, execute ③; otherwise, return the fundamental surface list and the final grid list.

[0220] ③ Calculate the centroid of the current initial grid, the centroids of all original surfaces, and the midpoints of all original edges.

[0221] ④ Initialize the fundamental surface list, and the node index number j = 0;

[0222] ⑤ Determine whether the node index number j of the current original node exceeds the maximum node number (the total number of original nodes); if so, execute ⑥; otherwise, execute ⑧.

[0223] ⑥ Obtain the original nodes and feature points required for the final grid corresponding to this original node; construct a final grid, add all surface information to this final grid, and add the final grid to the final grid list. Determine whether the constructed fundamental surface exists in the fundamental surface list; if so, add node information to the fundamental surface; if not, construct the fundamental surface; add node information to the fundamental surface, and add the fundamental surface to the fundamental surface list.

[0224] ⑦ j = j + 1, and execute ⑤.

[0225] ⑧ i = i + 1, and execute ②.

[0226] S5 After all the initial grids are divided, summarize all the final grids to obtain the target structure model, and complete the division of the three-dimensional structure model.

[0227] The present invention divides the three-dimensional structure model of a semiconductor device into initial grids, and each initial grid includes original nodes, and then each initial grid is divided into final grids. Based on the above two divisions, the three-dimensional structure model of the semiconductor device is refined into a target structure model including final grids. By accurately dividing the grid and optimizing the model structure, the accuracy and reliability of the simulation results are improved, providing strong support for the design and optimization of semiconductor devices.

[0228] Of course, the model division method of the present invention is not limited to semiconductor devices (ray tracing therein), and can also be applied to other field scenarios with internal discrete absorption (not necessarily light).

[0229] Figure 7 is a schematic diagram of the principle of an application method for model division provided by an embodiment of this specification. The method includes:

[0230] S6 Extract the ray information of the irradiated light and the target structure model of the semiconductor device; the target structure model includes a number of final meshes.

[0231] S7 Determine the first intersection point based on the intersection of the ray information and the final meshes.

[0232] S8 Update the ray information according to the reflection result of the irradiated light at the first intersection point.

[0233] S9 Search for the first final mesh corresponding to the first intersection point, simulate the ray trace of the irradiated light in the first final mesh in combination with the ray information, and determine the second intersection point and the performance data of the second intersection point.

[0234] S10 If the second basic surface where the second intersection point is located is of the target type, obtain the performance data of the semiconductor device in combination with the simulation result and / or performance data of the ray tracing.

[0235] The efficiency and flexibility of ray tracing in simulating optical phenomena such as the propagation path, reflection, refraction, and scattering of light. By tracking the paths of a large number of rays, ray tracing can accurately simulate the distribution of complex light fields and the interaction between light and matter. With its flexibility and efficiency, it can better meet the design and optimization requirements of superstructures and metasurfaces, efficiently handle these complex sub-wavelength geometries and multi-layer structures, accurately predict their impact on light propagation, and promote the development of new optical devices.

[0236] Although ray tracing technology shows significant advantages in optical simulation, its application in predicting / calculating the carrier generation rate in semiconductors still faces many challenges, such as:

[0237] (1) Unable to handle complex boundary conditions: The surface of a semiconductor device may have complex shapes (e.g., uneven, microstructured, etc.), and these boundary conditions will affect the propagation path of light, resulting in multiple refractions and reflections of light between different surfaces.

[0238] (2) Unable to effectively implement multi-physics field coupling: During the operation of a semiconductor device, the electric field and thermodynamic field in the device will change with the working conditions, which will affect the refractive index of the material, etc. Therefore, in ray tracing simulation, multi-physics field coupling needs to be considered to accurately simulate the dynamic changes of light characteristics.

[0239] The present invention considers that the scene construction of ray tracing includes four basic elements: light source, material, optical property, and geometry.

[0240] Among them, the light source determines the starting position, direction, wavelength, and energy of the light.

[0241] Materials are used to characterize the properties of different objects, such as: material refractive index and material absorption coefficient.

[0242] Optical properties refer to the characteristics exhibited by materials or objects when interacting with light. These properties determine how light is reflected, refracted, absorbed, and scattered, thereby affecting optical performance. In this scenario, we mainly use the Fresnel formula to determine whether light is refracted or reflected.

[0243] Geometry refers to dividing a three-dimensional structural model or region into discrete meshes (tetrahedral meshes, hexahedral meshes, etc.) and the discrete nodes that make up these meshes based on the finite element mesh algorithm. Based on this mesh information, the three-dimensional structural model is divided into tiny geometries.

[0244] In the foregoing content, the present invention reshapes the basic elements of "geometry" to construct a target structure model. Next, the present invention will also combine other basic elements to accurately simulate the dynamic changes of light characteristics.

[0245] Based on the limitations of existing methods, the present invention proposes an application method for model division, which is applicable to efficient and accurate calculation of the rate of photo-generated carriers based on ray tracing, specifically including:

[0246] S6 Extract the ray information of the incident ray and the target structure model of the semiconductor device;

[0247] The target structure model includes a number of final meshes;

[0248] S61 When the incident ray irradiates the semiconductor device, collect the ray information of the incident ray;

[0249] When there is an incident ray irradiating the semiconductor device, construct ray information according to the incident situation of the incident ray. The ray information includes but is not limited to: power, incident position, incident direction, wavelength.

[0250] S62 Retrieve the target structure model of the semiconductor device;

[0251] If the three-dimensional structure model of the semiconductor device includes initial meshes, original nodes, after dividing it into tetrahedral meshes, there will be 4 final meshes, assigned to original nodes.

[0252] According to the traditional ray tracing modeling process, it is mainly: first construct 4 final meshes (N-sided bodies), then there will be 4 Fundamentals. Then, based on the bounding boxes of these fundamentals, spatial partitioning is performed, such as acceleration structures like quadtrees, octrees, KD-trees, BVHs, etc. When the incident light intersects with the three-dimensional structure model in the scene, it first intersects with the geometric bounding boxes in the acceleration structure. After confirming the candidate set of possible intersection points, for each geometric body in the candidate set, precise intersection calculations are performed to return the final intersection points.

[0253] However, the above methods mainly have the following problems: (1) Constructing the acceleration structure is very time-consuming; (2) Although the cost of a single intersection between the light and the geometric bounding box of the acceleration structure is very low, due to the density of the scene, the number of intersections between the light and the bounding box is extremely large, resulting in extremely time-consuming ray tracing.

[0254] Therefore, in order to improve the calculation efficiency, the present invention performs model partitioning on the three-dimensional structure model of the semiconductor device based on the foregoing steps S1 - S5. Through a two-step partitioning strategy, the three-dimensional structure model is converted into several dense and continuous final meshes (nonagons). Subsequent operations are performed based on the target structure model composed of the final meshes.

[0255] S7 Determine the first intersection point based on the intersection situation between the light information and the final mesh;

[0256] A light source emits an incident light. According to the light information of the incident light, intersection detection is performed on the boundary of the target structure model to determine the intersection point of the incident light and the target structure model, which is used as the first intersection point. In an embodiment of the present specification, the ray - triangle / voxel intersection algorithm is used to calculate the first intersection point of the incident light and all boundary surfaces.

[0257] S8 Update the light information according to the reflection result of the incident light at the first intersection point;

[0258] Find the fundamental plane where the first intersection point is located as the first fundamental plane;

[0259] Combine the relative position of the light information and the first fundamental plane to determine the incident angle of the incident light on the first fundamental plane ;

[0260] According to the material information of the first fundamental plane, use the Fresnel formula to judge the reflection ratio; if , it indicates total reflection, and the ray tracing ends; otherwise, update the light information;

[0261] S9 Find the first final mesh corresponding to the first intersection point, and simulate the light trace of the incident light in the first final mesh in combination with the light information to determine the second intersection point and the performance data of the second intersection point;

[0262] S91 Locate the final grid where the first fundamental plane is located according to the final grid list as the first final grid;

[0263] S92 Based on the pre-constructed final grid list and the mapping relationship between the first final grid and the fundamental planes, obtain the adjacent fundamental planes, where the adjacent fundamental planes are the other fundamental planes in the first final grid except the first fundamental plane;

[0264] The present invention reduces the computational amount by reducing unnecessary acceleration structure construction and complex intersection detection; by directly performing intersection on the subdivided final grid (nonadron), the computational efficiency and accuracy are improved.

[0265] S93 Combine the updated ray information with the relative positions of the adjacent fundamental planes to find the second intersection point and the second fundamental plane.

[0266] The present invention does not apply traditional acceleration structures (such as BVH and KD tree), and uses the method of constructing adjacent indexes (establishing index relationships for adjacent nonadrons) to improve the tracing efficiency.

[0267] S94 Determine the performance data at the second intersection point;

[0268] Among them, the performance data is preferably the generation rate of photogenerated carriers.

[0269] S941 Locate the second fundamental plane where the second intersection point is located; based on the material information of the second fundamental plane, determine the material absorption coefficient of the second intersection point ;

[0270] S942 Determine the ray trace route of the incident ray in the first final grid according to the coordinates of the first intersection point and the second intersection point, and determine the path length of the incident ray in the first final grid ;

[0271] S943 Combine the material absorption coefficient of the second intersection point , path length and the power in the ray information to determine the power of the second intersection point ;

[0272] Take the power in the ray information as the power of the incident ray at the first intersection point .

[0273] The power of the second intersection point .

[0274] S944 Construct the volume of the first final grid according to the coordinates of the first final grid ;

[0275] S945 Calculate the generation rate of photogenerated carriers .

[0276] When the irradiated light reaches the second intersection point, the generation rate of photo-generated carriers .

[0277] Wherein: is the quantum efficiency (constant), which describes the efficiency of generating an electron-hole pair after absorbing a photon; Planck's constant; speed of light (constant); volume of the first final grid; wavelength.

[0278] The present invention uses ray tracing technology to accurately simulate the propagation process of light in semiconductor materials, combines the generation rate formula of photo-generated carriers, accurately calculates the generation distribution of carriers, and improves the authenticity and reliability of calculation results.

[0279] In another embodiment of the present specification, the performance data further includes: light absorption amount (distribution of light absorption in the device), that is - .

[0280] S10 If the second basic plane where the second intersection point is located is of the target type, the performance data of the semiconductor device is obtained by combining the simulation results of the ray tracing and / or the performance data.

[0281] According to the type of the second basic plane where the second intersection point is located, the performance data of the semiconductor device is obtained.

[0282] S101 If the second basic plane is of the first type (boundary surface), it is determined that the second basic plane where the second intersection point is located is of the target type, and the performance data of the semiconductor device is obtained by combining all the ray traces and the performance data corresponding to the second intersection point.

[0283] The performance data can be the simulation results of the ray tracing. In one embodiment of the present specification, the simulation results of the ray tracing are obtained by sequentially summarizing each ray trace route.

[0284] Of course, the performance data can be all the performance data and / or the latest performance data.

[0285] Based on the performance data, assist the user to optimize the performance design of the semiconductor device.

[0286] S92 If the second basic plane is of the second type (common plane), the second intersection point is used as the new first intersection point to update the ray information; step S9 is executed to continue simulating the ray trace.

[0287] The method for calculating the rate of semiconductor photo-generated carriers based on ray tracing proposed by the present invention realizes the efficient and accurate simulation of the behavior of photo-generated carriers through innovative algorithm design and optimization, providing strong theoretical support and technical guarantee for the high-performance design of semiconductor devices. This method can not only improve the calculation accuracy and shorten the calculation time, but also better meet the simulation requirements of complex semiconductor devices.

[0288] When the final grid is an enneahedron, the specific execution process of this application method is briefly described as follows:

[0289] ① A light source generates a ray, and the ray information includes: position, direction, wavelength, and power.

[0290] ② The ray intersects with the surface of the physical structure to find the corresponding (basic) face of the intersection point.

[0291] ③ Obtain the material refractive index and absorption coefficient of the node corresponding to the face, and apply the Fresnel formula to judge the next direction of the ray.

[0292] ④ Judge whether the ray is reflected. If so, stop the tracing; otherwise, execute ⑤.

[0293] ⑤ Update the ray information, find the enneahedron according to the intersection face, and let the ray intersect with the other eight faces to find the nearest intersection point.

[0294] ⑥ Update the ray power and the rate of photo-generated carriers of the node according to the intersection point information.

[0295] ⑦ Confirm the next enneahedron according to the face where the intersection point is located.

[0296] ⑧ Judge whether there is a next enneahedron. If so, execute ⑤; otherwise, stop the tracing.

[0297] In an application scenario of the present invention, the method of the present invention is applied to a simulation scenario. According to the calculated distribution of photo-generated carriers, the surface optical structure (anti-reflection, anti-crosstalk, etc.) and the optical design of the semiconductor thin film structure (light absorption film thickness, multi-junction photocurrent matching, etc.) are designed and optimized.

[0298] In an application scenario of the present invention, the above method is applied to a light-absorbing semiconductor device, and the main functions of its performance data include:

[0299] (1) By simulating the behaviors of reflection, refraction, and scattering of rays in the semiconductor device, the parts and reasons that may cause light loss are found, and then the device structure is improved and optimized. For example, in the design of a solar concentrator, ray tracing technology can be used to adjust the shape, position, and angle of the reflector or lens so that more rays can be absorbed by the solar cell, improving the light collection efficiency of the entire system.

[0300] (2) Considering the complex lighting conditions and environmental factors in practical applications, such as different solar altitude angles, cloud cover, shadows, etc., accurately evaluate the performance of light-absorbing semiconductor devices in various environments, and provide a reference for their applications in different scenarios. For example, when designing a distributed solar power generation system, ray tracing simulation can predict the power generation of solar panels at different installation positions and angles at different times of the day and in different seasons.

[0301] In an application scenario of the present invention, applying the above method to a light-detecting semiconductor device, the functions of its performance data mainly include:

[0302] (1) It can track the propagation and interaction process of incident light in the photodetector, accurately calculate the generation, separation, and collection efficiency of photo-generated carriers, and thus deeply understand the light response characteristics of the detector (responsivity, quantum efficiency, response time, etc.). For example, when designing a high-speed photodetector, ray tracing can optimize the device structure and materials to reduce the recombination and transmission time of carriers and improve the response speed of the detector.

[0303] (2) By simulating the propagation path of light in the detector and the distribution of photo-generated carriers, discover structural defects or unreasonable points, and then optimize the structure of the detector. For example, in the design of an avalanche photodiode, ray tracing technology can be used to adjust the electric field distribution and structural parameters of the multiplication region, improve the avalanche multiplication efficiency and stability, and reduce noise.

[0304] (3) Combining the generation and transmission process of photo-generated carriers, analyze the noise sources in the detector, such as shot noise, thermal noise, etc., and study the variation law of noise under different structures and working conditions through ray tracing simulation, providing a theoretical basis for reducing noise and improving the signal-to-noise ratio of the detector. For example, when designing a low-noise photodetector, ray tracing can optimize the packaging structure and materials of the detector, reduce the interference of the external environment on the detector, and lower the noise level.

[0305] In an application scenario of the present invention, applying the above method to a light-sensing semiconductor device, the functions of its performance data mainly include:

[0306] (1) By tracking the propagation of light in the light sensor device and its interaction with the semiconductor material, deeply understand the physical mechanism of light sensing, such as the generation of photo-generated carriers, the change of electrical properties of the semiconductor material, etc., providing a theoretical basis for optimizing the performance and design of the sensor. For example, when studying a semiconductor gas sensor, ray tracing can help researchers understand the influence of gas molecules adsorbed on the semiconductor surface on light absorption and scattering, so as to optimize the sensitivity and selectivity of the sensor.

[0307] (2) Simulate the propagation path and distribution of light in the sensor, identify the key factors affecting the sensor performance, such as the incident angle of light, the optical and electrical properties of materials, etc., and improve the sensor performance by optimizing the structure and materials of the sensor. For example, in the design of charge-coupled devices, the ray tracing technology can be used to optimize the structure and layout of photosensitive units, improving the resolution and sensitivity of images.

[0308] (3) Consider the influence of environmental factors in practical applications, such as temperature, humidity, gas concentration, etc., on the performance of the optical sensing semiconductor device, and study the variation of the sensor response characteristics under different environmental conditions through ray tracing simulation, providing a basis for the calibration and compensation of the sensor. For example, in the study of semiconductor humidity sensors, ray tracing can simulate the propagation and scattering of light in the sensor under different humidity environments, as well as the influence on the electrical performance of the sensor, so as to achieve accurate measurement and compensation of humidity.

[0309] Figure 8 The structure diagram of a model partitioning system for a semiconductor device provided by an embodiment of this specification, the system includes:

[0310] A reading module 810, configured to read the three-dimensional structure model of the semiconductor device;

[0311] An initial partitioning module 820, configured to perform an initial partitioning on the three-dimensional structure model to obtain a number of initial meshes;

[0312] A feature point construction module 830, configured to construct feature points based on the index relationship of the initial meshes; wherein, in different initial meshes, the feature points corresponding to the same basic feature coincide; the feature points include one or more of volume feature points, surface feature points, and edge feature points;

[0313] A final partitioning module 840, configured to combine the original nodes and feature points corresponding to the initial meshes to partition the initial meshes into a number of final meshes;

[0314] A summarizing module 850, configured to summarize all the final meshes to obtain a target structure model after all the initial meshes are partitioned, completing the partitioning of the three-dimensional structure model.

[0315] Optionally, the initial partitioning module 820 includes:

[0316] A configuration sub-module, configured to obtain the partitioning attribute value input by the user as a configuration parameter;

[0317] An initial partitioning sub-module, configured to perform finite element mesh partitioning on the three-dimensional structure model based on the configuration parameter to obtain a number of the initial meshes.

[0318] Optionally, the body feature point is the centroid of the initial mesh;

[0319] Optionally, the face feature point is the centroid of the original face of the initial mesh;

[0320] Optionally, the edge feature point is the midpoint of the original edge of the initial mesh.

[0321] Optionally, the final partitioning module 840 includes:

[0322] A node determination sub-module for determining the current original node;

[0323] A first judgment sub-module for judging whether the node index number of the current original node exceeds the maximum node index;

[0324] If the node index number does not exceed the maximum node index, then search for the target feature point associated with the current original node;

[0325] Construct the final mesh by combining the current original node, the corresponding set of target feature points, and the preset topological relationship.

[0326] Optionally, the final partitioning module 840 further includes:

[0327] A second judgment sub-module for judging whether the current original node is the last original node in the list of original nodes;

[0328] If so, then judge whether the current initial mesh is the last initial mesh in the list of initial meshes. If so, it indicates that all the initial meshes have been partitioned; otherwise, take the next initial mesh of the current initial mesh as the new current initial mesh;

[0329] Otherwise, take the next original node of the current original node as the new current original node.

[0330] Figure 9 This is a schematic structural diagram of an application system for model partitioning provided by an embodiment of the present specification. Based on the target structure model obtained by the foregoing model partitioning method, the performance of a semiconductor device is predicted. The system includes:

[0331] An extraction module 910 for extracting the light information of the irradiated light and the target structure model of the semiconductor device; the target structure model includes a number of final meshes;

[0332] An intersection processing module 920 for determining the first intersection point based on the intersection situation between the light information and the final mesh;

[0333] A reflection processing module 930, configured to update light information according to a reflection result of the irradiation light at the first intersection point;

[0334] A tracking and predicting module 940, configured to find a first final grid corresponding to the first intersection point, simulate a light trace of the irradiation light in the first final grid in combination with the light information, and determine a second intersection point and performance data of the second intersection point;

[0335] An obtaining module 950, configured to, if a second basic plane where the second intersection point is located is of a target type, obtain performance data of the semiconductor device in combination with a simulation result and / or performance data of the light tracing.

[0336] The functions of the system according to the embodiments of the present invention have been described in the above method embodiments. Therefore, for details not described in this embodiment, reference may be made to the relevant descriptions in the foregoing embodiments, which will not be repeated here.

[0337] Figure 10 The following is a schematic structural diagram of an electronic device provided by an embodiment of this specification. The electronic device includes: a memory 1001 and a processor 1002. The memory 1001 is used to store computer-executable instructions. When the computer-executable instructions are executed by the processor 1002, the steps of the above method embodiments can be implemented.

[0338] Figure 11 The following is a schematic structural diagram of a computer-readable storage medium provided by an embodiment of this specification. The computer-readable storage medium 1100 stores one or more computer programs. When the one or more computer programs are executed by a processor, the steps of the above method embodiments can be implemented.

[0339] The embodiments of this specification further provide a computer program product, including a computer program / computer-executable instructions. When the computer program / computer-executable instructions are executed by a processor, the steps of the above method embodiments can be implemented.

[0340] Those of ordinary skill in the art can understand that all or part of the processes in the above method embodiments can be completed by instructing relevant hardware through a computer program. When the computer program is executed, it may include the processes of the above method embodiments.

[0341] Obviously, those skilled in the art can make various modifications and variations to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention is also intended to include these modifications and variations.

Claims

1. A method for predicting the performance of a semiconductor device, characterized in that, Including: Reading a three-dimensional structure model of a semiconductor device; Performing an initial division on the three-dimensional structure model to obtain a number of initial meshes; Constructing feature points based on the index relationship of the initial meshes; combining the original nodes and feature points corresponding to the initial meshes, dividing the initial meshes into a number of final meshes; after all the initial meshes are divided, aggregating all the final meshes to obtain a target structure model; Extracting the ray information of the illuminating ray and the target structure model of the semiconductor device; Determining a first intersection point based on the intersection situation between the ray information and the final meshes; Updating the ray information according to the reflection result of the illuminating ray at the first intersection point; Searching for the first final mesh corresponding to the first intersection point, simulating the ray trace of the illuminating ray in the first final mesh in combination with the ray information, and determining a second intersection point and the performance data of the second intersection point; If the second basic surface where the second intersection point is located is of a target type, obtaining the performance data of the semiconductor device in combination with the simulation result and / or performance data of the ray tracing.

2. The method according to claim 1, characterized in that, The performing an initial division on the three-dimensional structure model to obtain a number of initial meshes includes: Obtaining the division attribute value input by the user as a configuration parameter; Performing finite element mesh division on the three-dimensional structure model based on the configuration parameter to obtain a number of the initial meshes.

3. The method according to claim 1, wherein In different initial meshes, the feature points corresponding to the same basic feature coincide; the feature points include one or more of volume feature points, surface feature points, and edge feature points.

4. The method according to claim 3, wherein The volume feature point is the centroid of the initial mesh; and / or, The surface feature point is the centroid of the original surface of the initial mesh; and / or, The edge feature point is the midpoint of the original edge of the initial mesh.

5. The method according to claim 1, wherein The combining the original nodes and feature points corresponding to the initial meshes, and dividing the initial meshes into a number of final meshes includes: Determining the current original node; Judging whether the node index number of the current original node exceeds the maximum node index; If the node index number does not exceed the maximum node index, searching for the target feature point associated with the current original node; Constructing the final mesh in combination with the current original node, the corresponding target feature point set, and the preset topological relationship.

6. The method according to claim 5, characterized in that After the constructing the final mesh in combination with the current original node, the corresponding target feature point set, and the preset topological relationship, it further includes: Judging whether the current original node is the last original node in the original node list; If so, judging whether the current initial mesh is the last initial mesh in the initial mesh list. If so, it indicates that all the initial meshes have been divided; otherwise, taking the next initial mesh of the current initial mesh as the new current initial mesh; Otherwise, taking the next original node of the current original node as the new current original node.

7. A performance prediction system for a semiconductor device, characterized in that, Including: A reading module for reading a three-dimensional structure model of a semiconductor device; An initial division module for performing an initial division on the three-dimensional structure model to obtain a number of initial meshes; A feature point construction module for constructing feature points based on the index relationship of the initial meshes; A final division module, configured to divide the initial grid into a plurality of final grids by combining the original nodes and feature points corresponding to the initial grid; A summarization module, configured to summarize all the final grids to obtain a target structure model after all the initial grids are divided, thereby completing the division of the three-dimensional structure model; An extraction module, configured to extract the light information of the irradiation light and the target structure model of the semiconductor device; An intersection processing module, configured to determine a first intersection point based on the intersection situation between the light information and the final grid; A reflection processing module, configured to update the light information according to the reflection result of the irradiation light at the first intersection point; A tracing and prediction module, configured to find the first final grid corresponding to the first intersection point, simulate the light trace of the irradiation light in the first final grid in combination with the light information, and determine a second intersection point and the performance data of the second intersection point; An acquisition module, configured to, if the second basic surface where the second intersection point is located is of a target type, obtain the performance data of the semiconductor device by combining the simulation result and / or performance data of the light tracing; 8. An electronic device, wherein, The electronic device includes: A processor; and A memory storing computer-executable instructions, where the executable instructions, when executed, cause the processor to execute the method according to any one of claims 1-6.

9. A computer-readable storage medium, wherein, The computer-readable storage medium stores one or more computer programs, and when the one or more computer programs are executed by a processor, the method according to any one of claims 1-6 is implemented.

10. A computer program product, wherein, The computer program product includes: a computer program / instructions, and when the computer program / instructions are executed by a processor, the method according to any one of claims 1-6 is implemented.

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