Bonding Optimization Method, Electronic Device, Storage Medium and Program Product

Abstract

The present invention provides a bonding optimization method, an electronic device, a storage medium, and a program product. Among them, the bonding optimization method includes: constructing a digital twin model based on the obtained bonding equipment-related data; performing simulation on the bonding based on the digital twin model to obtain a simulation result; and adjusting the parameters in the bonding based on the simulation result, so as to optimize the bonding process. By constructing a digital twin model and performing simulation according to the digital twin model, the trends of warping and misalignment after bonding can be effectively predicted. The parameters of the bonding are adjusted according to the simulation result, the bonding process is optimized, and the warping during the bonding process is corrected in time, so as to achieve the purpose of improving the bonding quality.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and particularly relates to a bonding optimization method, an electronic device, a storage medium, and a program product. Background Art

[0002] In the existing hybrid bonding process, a point pressing method is usually used to preliminarily bond the upper and lower wafers, and the bonding process is transmitted through the adsorption energy on the bonding surface. Due to the existence of factors such as bonding waves and friction, in the prior art, even if the wafers are in a slightly warped state before bonding, there will still be a large warpage after bonding. In addition to warpage, due to the deformation of the wafers during the bonding process, misalignment occurs at the originally expected alignment positions of the upper and lower wafers, which seriously affects the bonding quality. In the existing bonding technology, it is impossible to effectively predict the tendency of warpage and misalignment after bonding, and there is also a lack of a method for timely correcting warpage during the bonding process. Summary of the Invention

[0003] Aiming at the problems existing in the prior art, the present invention provides a bonding optimization method, an electronic device, a storage medium, and a program product, which at least partially solve the problems in the prior art that it is impossible to effectively predict the tendency of warpage and misalignment after bonding, and there is also a lack of a method for timely correcting warpage during the bonding process.

[0004] In a first aspect, an embodiment of the present disclosure provides a bonding optimization method, including:

[0005] Constructing a digital twin model based on the obtained bonding equipment-related data;

[0006] Performing simulation on the bonding based on the digital twin model to obtain a simulation result;

[0007] Adjusting the parameters in the bonding based on the simulation result, thereby optimizing the bonding process.

[0008] Optionally, the digital twin model includes: a device physical model and a bonding dynamics process simulation prediction model;

[0009] The device physical model is a virtual model constructed based on the bonding equipment;

[0010] The bonding dynamics process simulation prediction model is a simulation prediction model constructed based on the actual physical quantities in the bonding equipment. The real-time device state of the bonding equipment is used as the model input, and by simulating and predicting the existing state of the bonding equipment, the bonding dynamics process can be effectively reflected.

[0011] Optionally, the constructing of the digital twin model includes obtaining the acting force of the air film during the bonding process on the bonding process and the adhesion force during the bonding process.

[0012] Optionally, the force exerted by the air film during the bonding process on the bonding process is related to the gap size, and the relationship formula between the force and the gap size is:

[0013] ,

[0014] where, is the air viscosity; is the air film gap; is the resistance of the air film to the wafer, represents the feature height.

[0015] Optionally, the formula for the adhesion force during the bonding process is:

[0016] ,

[0017] is the interface gap, is the mutual force of the bonding interface when the spacing is ; is the interface bonding energy; is the characteristic adhesion length.

[0018] Optionally, the parameters in the adjustment of the bonding parameters based on the simulation results include:

[0019] wafer displacement, temperature, humidity, and air concentration.

[0020] Optionally, the optimization of the bonding process includes:

[0021] regulating the angle and height of the bonding chuck.

[0022] In a second aspect, an embodiment of the present disclosure further provides an electronic device, which includes:

[0023] at least one processor; and,

[0024] a memory communicatively connected to the at least one processor; wherein,

[0025] the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute any of the bonding optimization methods in the first aspect.

[0026] In a third aspect, an embodiment of the present disclosure further provides a computer-readable storage medium, which stores computer instructions for causing a computer to execute any of the bonding optimization methods in the first aspect.

[0027] In a fourth aspect, an embodiment of the present disclosure further provides a computer program product, including a computer program / instructions, which, when executed by a processor, implement the bonding optimization method according to any one of the first aspect.

[0028] The bonding optimization method, electronic device, storage medium, and program product provided by the present invention. In the bonding optimization method, a digital twin model is constructed and simulated according to the digital twin model, so as to effectively predict the tendency of warping and misalignment after bonding. The bonding parameters are adjusted according to the simulation results to optimize the bonding process and timely correct the warping during the bonding process, so as to achieve the purpose of improving the bonding quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] By describing the exemplary embodiments of the present disclosure in more detail in conjunction with the accompanying drawings, the above and other objects, features, and advantages of the present disclosure will become more obvious. Among them, in the exemplary embodiments of the present disclosure, the same reference numerals generally represent the same components.

[0030] Figure 1 and Figure 2 is a schematic structural diagram of a bonding device provided by an embodiment of the present disclosure;

[0031] Figure 3 is a flowchart of a bonding optimization method provided by an embodiment of the present disclosure;

[0032] Figure 4 is a schematic block diagram of an electronic device provided by an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0033] The embodiments of the present disclosure will be described in detail below in conjunction with the accompanying drawings.

[0034] It should be clear that the following uses specific specific examples to illustrate the implementation manners of the present disclosure, and those skilled in the art can easily understand other advantages and effects of the present disclosure from the content disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all the embodiments. The present disclosure can also be implemented or applied through other different specific implementation manners, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present disclosure. It should be noted that, without conflict, the following embodiments and the features in the embodiments can be combined with each other. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present disclosure without creative efforts belong to the scope of protection of the present disclosure.

[0035] It should be noted that the following describes various aspects of embodiments within the scope of the appended claims. It will be apparent that the aspects described herein can be embodied in a wide variety of forms, and any specific structure and / or function described herein is merely illustrative. Based on this disclosure, those skilled in the art should understand that one aspect described herein can be implemented independently of any other aspect, and two or more of these aspects can be combined in various ways. For example, any number of aspects described herein can be used to implement a device and / or practice a method. Additionally, this device can be implemented and this method can be practiced using other structures and / or functionality in addition to one or more of the aspects described herein.

[0036] It should also be noted that the diagrams provided in the following embodiments only schematically illustrate the basic concept of this disclosure. The diagrams only show the components related to this disclosure, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and proportion of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0037] In addition, in the following description, specific details are provided to facilitate a thorough understanding of the examples. However, those skilled in the art will understand that the aspects described can be practiced without these specific details.

[0038] As Figure 1 and Figure 2 shown, the bonding device includes upper and lower suction cups, pressing probes, a vacuum suction cup control device, and sensors equipped on the suction cups.

[0039] The upper and lower suction cups are used for the fixation and transfer of wafers during the hybrid bonding process. The pressing probes are used to initiate the bonding process. The vacuum suction cup control device is used to control the position and angle of the vacuum suction cup during the bonding process. The sensors include an infrared displacement sensor, a temperature sensor, a humidity sensor, etc.

[0040] For ease of understanding, as Figure 3 shown, this embodiment discloses a bonding optimization method, including:

[0041] Constructing a digital twin model based on the obtained data related to the bonding device;

[0042] Performing simulation on the bonding based on the digital twin model to obtain a simulation result;

[0043] Adjusting the parameters in the bonding based on the simulation result, so as to optimize the bonding process.

[0044] Optionally, the digital twin model includes: a device physical model and a bonding kinetic process simulation and prediction model;

[0045] The physical model of the device is a virtual model constructed based on the bonding device;

[0046] The simulation prediction model of the bonding kinetic process is a simulation prediction model constructed based on the actual physical quantities of the bonding device. The real-time device state of the bonding device is used as the model input, and the existing state of the bonding device is simulated and predicted, so as to effectively reflect the bonding kinetic process.

[0047] Optionally, the construction of the digital twin model includes obtaining the acting force of the air film during the bonding process on the bonding process and the adhesion force during the bonding process.

[0048] Optionally, the acting force of the air film during the bonding process on the bonding process is related to the gap size, and the relationship formula between the acting force and the gap size is:

[0049] ,

[0050] wherein, is the air viscosity; is the air film gap; is the resistance of the air film to the wafer, represents the characteristic height, that is, the minimum thickness of the incompressible fluid.

[0051] Optionally, the formula for the adhesion force during the bonding process is:

[0052] ,

[0053] is the interface gap, is the mutual acting force of the bonding interface when the spacing is ; is the interface bonding energy; is the characteristic adhesion length.

[0054] Optionally, the parameters in the adjustment of the parameters during bonding based on the simulation results include:

[0055] wafer displacement, temperature, humidity and air concentration.

[0056] Optionally, the optimization of the bonding process includes:

[0057] regulating the angle and height of the bonding chuck.

[0058] In this embodiment, by optimizing the bonding method and the bonding device, the quality of the hybrid bonding process is optimized.

[0059] The main process is as follows:

[0060] (1) Construct a digital twin model of the hybrid bonding process based on the bonding device and the actual physical quantities;

[0061] (2) Set up the digital twin model based on the actual physical process and actual physical quantities;

[0062] (3) Perform the hybrid bonding process;

[0063] (4) During the bonding process, collect data based on the sensors on the bonding equipment and feed it back to the digital twin system;

[0064] (5) Identify the bonding state through the digital twin system, perform simulation prediction based on the original settings and existing data, and obtain the real-time optimal values of factors such as the real-time bonding gap and bonding adsorption force based on the bonding optimization results;

[0065] (6) Debug the bonding equipment parameters based on the optimal values of the bonding parameters in the above steps;

[0066] (7) Repeat the above steps to complete the bonding process;

[0067] The digital twin model includes the physical model of the hybrid bonding equipment and the simulation prediction model of the bonding kinetics process:

[0068] (1) Equipment physical model: Construct a virtual model based on the actual bonding equipment, and complete the construction of the model through existing mature modeling software. In addition to the geometric information of the bonding equipment, this physical model can also be set through interactive software to perform real-time monitoring and control settings on the real bonding equipment.

[0069] (2) Bonding kinetics process simulation prediction model (hereinafter referred to as the simulation prediction model): A simulation prediction model constructed based on the actual physical quantities in the bonding model. This model uses the real-time equipment state as the model input, and performs simulation prediction on the existing situation through the simulation model, and can effectively reflect the bonding kinetics process.

[0070] Since there is a very small bonding gap between the upper and lower wafers during the bonding process, usually about 50μm, but this gap cannot be ignored. Therefore, in the simulation prediction model of the upper and lower wafers, in addition to the conventional mechanical equations, the influence of the tiny air film on the bonding process needs to be considered. Usually, the force of the air film on the bonding process during the bonding process is resistance, and the relationship between its resistance and the gap size can be described by the following formula:

[0071] ,

[0072] In the formula: is the air viscosity; is the air film gap; is the resistance of the air film to the wafer.

[0073] Since the bonding process is mainly achieved through adhesion, it is necessary to describe the adhesion force, and its specific description formula is as follows:

[0074] ,

[0075] is the interface gap; is the spacing of when the bonding interface has an interaction force; is the interface bonding energy; is the characteristic adhesion length;

[0076] By combining the above-defined formulas, the construction of the prediction model is completed.

[0077] During the bonding process, the bonding equipment follows the following steps for bonding:

[0078] (1) Fix the wafer to the specified position through a preset program and transmit the status data to the digital twin model;

[0079] (2) Press the probe down to start bonding;

[0080] (3) The sensor detects the bonding status every 1 s and transmits the wafer displacement and temperature to the digital twin model;

[0081] (4) Fine-tune the bonding equipment based on the simulation results of the digital twin model, and optimize the simulation parameters and data results in the digital twin model to obtain the optimal real-time state of the chuck;

[0082] (5) Regulate the angle and height of the bonding chuck according to the optimal state result;

[0083] (6) Repeat the above steps until the wafer is completely bonded;

[0084] The electronic device disclosed in this embodiment includes a memory and a processor. The memory is used to store non-temporary computer-readable instructions. Specifically, the memory may include one or more computer program products, and the computer program products may include various forms of computer-readable storage media, such as volatile memory and / or non-volatile memory. The volatile memory may include, for example, random access memory (RAM) and / or cache memory, etc. The non-volatile memory may include, for example, read-only memory (ROM), hard disk, flash memory, etc.

[0085] The processor may be a central processing unit (CPU) or other forms of processing units with data processing capabilities and / or instruction execution capabilities, and may control other components in the electronic device to perform desired functions. In one embodiment of the present disclosure, the processor is used to run the computer-readable instructions stored in the memory, so that the electronic device executes all or part of the steps of the bonding optimization method in the foregoing embodiments of the present disclosure.

[0086] Those skilled in the art should understand that, in order to solve the technical problem of how to obtain good user experience effects, well-known structures such as communication buses and interfaces may also be included in this embodiment, and these well-known structures should also be included in the protection scope of the present disclosure.

[0087] As Figure 4 FIG. is a schematic structural diagram of an electronic device provided by an embodiment of the present disclosure. It shows a schematic structural diagram of an electronic device suitable for implementing the electronic device in the embodiments of the present disclosure. Figure 4 The illustrated electronic device is only an example and should not impose any limitations on the functions and usage scope of the embodiments of the present disclosure.

[0088] As Figure 4 As shown, the electronic device may include a processing device (such as a central processing unit, a graphics processing unit, etc.), which may perform various appropriate actions and processes according to a program stored in a read-only memory (ROM) or a program loaded from a storage device into a random access memory (RAM). In the RAM, various programs and data required for the operation of the electronic device are also stored. The processing device, ROM, and RAM are connected to each other through a bus. An input / output (I / O) interface is also connected to the bus.

[0089] Generally, the following devices may be connected to the I / O interface: an input device including, for example, a sensor or a visual information acquisition device; an output device including, for example, a display screen; a storage device including, for example, a magnetic tape, a hard disk, etc.; and a communication device. The communication device may allow the electronic device to communicate with other devices (such as edge computing devices) wirelessly or wiredly to exchange data. Although Figure 4 the illustrated electronic device has various devices, it should be understood that it is not required to implement or have all the illustrated devices. Instead, more or fewer devices may be implemented or had.

[0090] In particular, according to an embodiment of the present disclosure, the processes described above with reference to the flowcharts can be implemented as computer software programs. For example, an embodiment of the present disclosure includes a computer program product that includes a computer program carried on a non-transitory computer-readable medium, and the computer program includes program code for performing the methods shown in the flowcharts. In such an embodiment, the computer program can be downloaded and installed from a network through a communication device, or installed from a storage device, or installed from a ROM. When the computer program is executed by a processing device, all or part of the steps of the bonding optimization method according to the embodiments of the present disclosure are performed.

[0091] For a detailed description of this embodiment, reference may be made to the corresponding descriptions in the foregoing embodiments, and details are not repeated herein.

[0092] The computer-readable storage medium disclosed in this embodiment stores non-temporary computer-readable instructions. When the non-temporary computer-readable instructions are run by a processor, all or part of the steps of the bonding optimization methods according to the foregoing embodiments of the present disclosure are performed.

[0093] The above-mentioned computer-readable storage medium includes but is not limited to: optical storage media (such as CD-ROMs and DVDs), magneto-optical storage media (such as MOs), magnetic storage media (such as magnetic tapes or external hard drives), media with built-in rewritable non-volatile memories (such as memory cards), and media with built-in ROMs (such as ROM cartridges).

[0094] For a detailed description of this embodiment, reference may be made to the corresponding descriptions in the foregoing embodiments, and details are not repeated herein.

[0095] The basic principles of the present disclosure have been described above in conjunction with specific embodiments. However, it should be noted that the advantages, benefits, effects, etc. mentioned in the present disclosure are only examples and not limitations, and it cannot be considered that these advantages, benefits, effects, etc. are essential for each embodiment of the present disclosure. In addition, the above-disclosed specific details are only for illustrative and easy-to-understand purposes, rather than limitations, and the above details do not limit the present disclosure to necessarily adopt the above specific details for implementation.

[0096] In this disclosure, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. The block diagrams of devices, apparatuses, equipment, and systems involved in this disclosure are only illustrative examples and do not intend to require or imply that they must be connected, arranged, and configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, equipment, and systems can be connected, arranged, and configured in any way. Words such as "including", "comprising", "having", etc. are open-ended words, meaning "including but not limited to", and can be used interchangeably with each other. The words "or" and "and" used herein refer to the word "and / or", and can be used interchangeably with each other, unless the context clearly indicates otherwise. The word "such as" used herein refers to the phrase "such as but not limited to", and can be used interchangeably with each other.

[0097] In addition, as used herein, "or" in the listing of items starting with "at least one" indicates a disjunctive listing, so that for example, the listing of "at least one of A, B, or C" means A or B or C, or AB or AC or BC, or ABC (i.e., A and B and C). Further, the wording "exemplary" does not mean that the examples described are preferred or better than other examples.

[0098] It should also be noted that in the systems and methods of this disclosure, each component or each step can be decomposed and / or recombined. These decompositions and / or recombinations should be regarded as equivalent solutions of this disclosure.

[0099] Various changes, substitutions, and alterations to the technologies described herein can be made without departing from the teachings defined by the appended claims. In addition, the scope of the claims of this disclosure is not limited to the specific aspects of the processes, machines, manufactures, compositions of events, means, methods, and acts described above. Current or later-developed processes, machines, manufactures, compositions of events, means, methods, or acts that perform substantially the same function or achieve substantially the same result as the corresponding aspects described herein can be utilized. Thus, the appended claims include such processes, machines, manufactures, compositions of events, means, methods, or acts within their scope.

[0100] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this disclosure. Therefore, this disclosure is not intended to be limited to the aspects shown herein, but rather to the broadest scope consistent with the principles and novel features disclosed herein.

[0101] The foregoing description has been presented for purposes of illustration and description. In addition, this description is not intended to limit embodiments of the present disclosure to the form disclosed herein. Although several example aspects and embodiments have been discussed above, those skilled in the art will recognize some variations, modifications, alterations, additions, and subcombinations thereof.

Claims

1. A bonding optimization method, characterized in that, Including: Constructing a digital twin model based on the obtained data related to the bonding equipment; Performing simulation on the bonding based on the digital twin model to obtain simulation results; Adjusting the parameters in the bonding based on the simulation results, so as to optimize the bonding process; The constructing of the digital twin model includes obtaining the acting force of the air film during the bonding process on the bonding process and the adhesion force during the bonding process; The acting force of the air film during the bonding process on the bonding process is related to the gap size, and the relationship formula between the acting force and the gap size is: ， Among them, is the air viscosity; is the air film gap; is the resistance of the air film to the wafer, represents the characteristic height.

2. The bonding optimization method according to claim 1, wherein The digital twin model includes: a device physical model and a simulation prediction model for the bonding kinetic process; The device physical model is a virtual model constructed based on the bonding equipment; The simulation prediction model for the bonding kinetic process is a simulation prediction model constructed based on the actual physical quantities in the bonding equipment. The real-time device state of the bonding equipment is used as the model input, and by simulating and predicting the existing state of the bonding equipment, the bonding kinetic process can be effectively reflected.

3. The bonding optimization method according to claim 1, wherein The formula for the adhesion force during the bonding process is: ， is the interface gap, is the spacing of the interaction force of the bonding interface when; is the interface bonding energy; is the characteristic adhesion length.

4. The bonding optimization method according to claim 1, characterized in that The parameters in the adjusting of the parameters in the bonding based on the simulation results include: Wafer displacement, temperature, humidity and air concentration.

5. The bonding optimization method according to claim 1, wherein The optimizing of the bonding process includes: Regulating the angle and height of the bonding chuck.

6. An electronic device, characterized in that, The electronic device includes: At least one processor; and, A memory communicatively connected to the at least one processor; wherein, The memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the bonding optimization method according to any one of claims 1-5.

7. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer instructions for causing a computer to execute the bonding optimization method according to any one of claims 1-5.

8. A computer program product comprising a computer program / instructions, characterized in that, When the computer program / instructions are executed by a processor, the bonding optimization method according to any one of claims 1-5 is implemented.

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