Repair method of semiconductor crystal

Abstract

The repairing method of the semiconductor crystal comprises the following steps: applying an oxidizing agent on the surface, with cracks, of the semiconductor crystal so as to form an oxide layer at the cracks; after oxidation, filling an insulator on the oxide layer of the crack; applying a filling pressure to the insulator, and keeping the filling pressure for a predetermined time length to form a filler in the crack; and curing the filler. The surface crack of the semiconductor crystal is filled and repaired, so that the structural strength of the semiconductor crystal and the reliability of a component are improved, and the service life of a product is prolonged.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and particularly to a method for repairing a semiconductor crystal. Background Art

[0002] Cracks in semiconductor components are common problems that limit their reliability and can easily lead to component failure. To reduce the impact of semiconductor crystal cracks on components, various methods have been proposed to repair and fill the cracks. The currently commonly used method is to fill the cracks with a metal filler, but this method has certain limitations. For example, metal filling may reduce the electrical performance of the crystal, resulting in component damage or other failures.

[0003] Therefore, it is necessary to provide an improved method for repairing a semiconductor crystal to solve the above problems. Summary of the Invention

[0004] The purpose of the present invention is to provide a method for repairing a semiconductor crystal to fill and repair surface cracks of the semiconductor crystal, thereby improving the structural strength of the semiconductor crystal and the reliability of the component, and extending the service life of the product.

[0005] To achieve the above purpose, the present invention provides a method for repairing a semiconductor crystal, including the following steps:

[0006] Applying an oxidant to the surface of the semiconductor crystal having cracks to form an oxide layer at the cracks;

[0007] After oxidation, filling an insulator in the oxide layer of the cracks;

[0008] Applying a filling pressure to the insulator and maintaining the filling pressure for a predetermined period of time to form a filler in the cracks; and

[0009] Curing the filler.

[0010] Compared with the prior art, in the method for repairing a semiconductor crystal provided by the present invention, first, the surface cracks are oxidized to form an oxide layer at the cracks. After the cracks are oxidized, an insulator is filled in the oxide layer of the cracks. Then, a filling pressure is applied to the insulator to form a filler in the cracks. The cured filler is closely attached to the oxide layer and does not damage the crystal. After scanning and detecting the repaired semiconductor crystal, it can be seen that the cracks of the semiconductor crystal are completely filled, effectively improving the reliability of the component and extending the service life. Moreover, the method of the present invention uses the oxide layer formed on the cracks to improve the filling effect of the insulator, which can improve the structural strength of the semiconductor crystal and reduce the influence of thermal stress.

[0011] As an embodiment, the oxidant is H 2O 2 or O 3 。

[0012] As an embodiment, the insulator is selected from at least one of polytetrafluoroethylene (PTFE), polyethylene (PE), polypropylene (PP), and polystyrene (PS).

[0013] As an embodiment, the oxidant is applied to the crack by coating or infiltration.

[0014] As an embodiment, the oxidation duration is 15 - 20 minutes.

[0015] As an embodiment, the filling pressure is controlled to be 2 - 2.5 MPa.

[0016] As an embodiment, the filling pressure is maintained for 15 - 20 minutes.

[0017] As an embodiment, the curing includes: placing the semiconductor crystal filled with the insulator in an oven, and the baking temperature is 70 - 85 °C.

[0018] As an embodiment, the baking time is 1 - 2 hours. Detailed implementation manners

[0019] To make the above objects, features, and advantages of the present application more obvious and understandable, the following describes the detailed implementation manners of the present application in combination with some embodiments. Many specific details are set forth in the following description to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0020] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present application.

[0021] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one such feature. In the description of this application, "a plurality of" means at least two, such as two, three, etc., unless otherwise specifically and explicitly defined.

[0022] It should be noted that when an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there may also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and do not represent the only implementation.

[0023] The repair method of the semiconductor crystal of the present invention will be further described below in conjunction with embodiments, but the present invention is not limited thereby. The method of the present invention aims to provide a repair method for a semiconductor crystal to fill and repair surface cracks of the semiconductor crystal, thereby improving the structural strength of the semiconductor crystal and the reliability of components and extending the service life of the product.

[0024] An embodiment of the repair method of the semiconductor crystal of the present invention includes the following steps:

[0025] Apply an oxidant on the surface of the semiconductor crystal having cracks to form an oxide layer at the cracks;

[0026] After oxidation, fill an insulator on the oxide layer of the cracks;

[0027] Apply a filling pressure to the insulator and maintain the filling pressure for a predetermined period of time to form a filler in the cracks; and

[0028] Cure the filler.

[0029] In the repair method of the semiconductor crystal provided by the present invention, first, the surface cracks are oxidized to form an oxide layer at the cracks. After the cracks are oxidized, an insulator is filled in the oxide layer at the cracks. Then, a filling pressure is applied to the insulator to form a filler in the cracks. The cured filler is closely attached to the oxide layer and does not damage the crystal. After the repaired semiconductor crystal is scanned and detected, it can be seen that the cracks of the semiconductor crystal are completely filled, effectively improving the reliability of components and extending the service life. Moreover, the method of the present invention uses the oxide layer formed on the cracks to improve the filling effect of the insulator, which can improve the structural strength of the semiconductor crystal and reduce the influence of thermal stress.

[0030] Specifically, in a particular embodiment, an oxidizing agent such as H 2 O 2 or O 3 is applied to the surface of the semiconductor crystal, and is applied to the crack by means of coating or infiltration, so that the surface of the crack is oxidized to form an oxide layer. In one embodiment, the oxidizing agent is coated on the surface of the semiconductor crystal and allowed to contact the crystal surface for 15 - 20 minutes until an oxide layer is produced.

[0031] Subsequently, an insulator is filled in the oxide layer of the crack. Preferably, the insulator is selected from at least one of polytetrafluoroethylene (PTFE), polyethylene (PE), polypropylene (PP), and polystyrene (PS). The method of the present invention can improve the filling effect by filling the oxide layer on the crack surface, improve the structural strength of the semiconductor crystal, and reduce the influence brought by thermal stress.

[0032] Specifically, a filling pressure is applied to the insulator to form a filler in the crack. For example, the filling pressure is 2 - 2.5 MPa, and the holding time of this filling pressure is preferably 15 - 20 minutes. Finally, the semiconductor crystal filled with the insulator is placed in an oven, the baking temperature is 70 - 85 °C, and after 1 - 2 hours, the filler is completely cured. After the filling is completed, a CT scanner is used for scanning inspection, and it is found that the crack is completely filled. Using SEM to study the filled crystal, it is found that the filler filling the crack closely adheres to the oxide layer formed by the crystal at the crack, and no phenomenon of damage to the crystal is found. The test results show that the method of the present invention can effectively fill the cracks in the semiconductor crystal and effectively improve the reliability of the components.

[0033] In summary, in the repair method of the semiconductor crystal provided by the present invention, first, the surface crack is oxidized to form an oxide layer at the crack. After the crack is oxidized, an insulator is filled in the oxide layer at the crack. Subsequently, a filling pressure is applied to the insulator to form a filler in the crack. The cured filler closely adheres to the oxide layer, and there is no damage to the crystal. After the repaired semiconductor crystal is scanned and detected, it can be seen that the crack of the semiconductor crystal is completely filled, effectively improving the reliability of the components and extending the service life. Moreover, the method of the present invention utilizes the oxide layer formed on the crack to improve the filling effect of the insulator, which can improve the structural strength of the semiconductor crystal and reduce the influence brought by thermal stress.

[0034] The above-disclosed are only the preferred embodiments of the present invention, and of course, the scope of the rights of the present invention cannot be limited thereby. Therefore, equivalent changes made according to the scope of the patent application of the present invention still fall within the scope covered by the present invention.

Claims

1. A method for repairing a semiconductor crystal, characterized in that, it comprises the following steps: Applying an oxidant on the surface of the semiconductor crystal having a crack to form an oxide layer at the crack; After oxidation, filling an insulator on the oxide layer of the crack; Applying a filling pressure to the insulator and maintaining the filling pressure for a predetermined period of time to form a filler in the crack; and Curing the filler.

2. The method for repairing a semiconductor crystal according to claim 1, characterized in that, The oxidant is H 2 O 2 or O 3 .

3. The method for repairing a semiconductor crystal according to claim 1, characterized in that, The insulator is selected from at least one of polytetrafluoroethylene (PTFE), polyethylene (PE), polypropylene (PP), and polystyrene (PS).

4. The method for repairing a semiconductor crystal according to claim 1, characterized in that, The oxidant is applied to the crack by coating or infiltration.

5. The method for repairing a semiconductor crystal according to claim 4, characterized in that: The oxidation time is 15 - 20 minutes.

6. The method for repairing a semiconductor crystal according to claim 1, characterized in that, Controlling the filling pressure to be 2 - 2.5 MPa.

7. The method for repairing a semiconductor crystal according to claim 1, characterized in that, Maintaining the filling pressure for 15 - 20 minutes.

8. The method for repairing a semiconductor crystal according to claim 1, characterized in that, The curing includes: placing the semiconductor crystal filled with the insulator in an oven, and the baking temperature is 70 - 85°C.

9. The method for repairing a semiconductor crystal according to claim 8, characterized in that, The baking time is 1 - 2 hours.