Miniaturized slide glass type internal matching power amplification device with high harmonic suppression

Abstract

The invention provides a miniaturized slide-type internal matching power amplification device with high harmonic suppression, relates to the technical field of harmonic suppression amplifiers, and provides a miniaturized slide-type internal matching power amplification device with high harmonic suppression by introducing a cascade design of a multi-stage power amplifier and combining an internal matching technology and innovative application of high-dielectric ceramic and molybdenum copper slide. The problems of gain improvement, harmonic suppression, thermal management and the like are successfully solved. According to the scheme, the miniaturized design is realized, the power density and the gain are also improved, the harmonic suppression performance is improved to-45dBc, and the efficiency is also optimized. Meanwhile, the molybdenum copper slide glass is combined with the conformal heat dissipation module, so that the thermal resistance can be effectively reduced, the service life of the device is prolonged, the strict high-temperature and high-frequency environment requirements are met, the reliability and the working efficiency of the system are improved, and the size and the weight of equipment are reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of harmonic suppression amplifiers, and specifically to a high-harmonic-suppression miniaturized chip-mounted internal matching power amplification device. Background Art

[0002] In the frequency band of 2.7 GHz to 3.5 GHz, 60W power devices are commonly used in high-frequency and high-power applications such as 5G communication base stations, satellite communications, and high-frequency radars. In traditional designs, the cascading of multi-stage power amplifiers and external harmonic filters often lead to problems such as large volume, insufficient heat dissipation, and low efficiency. Especially in scenarios that require compact sizes, such as in vehicles, drones, or small communication platforms, the prior art cannot balance the volume and weight of the device while ensuring power output. In addition, insufficient gain, unsatisfactory harmonic suppression, and difficult thermal management often affect the stability and reliability of the system, resulting in frequent failures and short service lives.

[0003] The above information disclosed in the background art section is only used to enhance the understanding of the background of the present disclosure, and thus it may include information that does not constitute the prior art known to those of ordinary skill in the art. Summary of the Invention

[0004] The purpose of the present invention is to provide a high-harmonic-suppression miniaturized chip-mounted internal matching power amplification device to solve the problems raised in the above background art.

[0005] To achieve the above purpose, the present invention provides the following technical solutions: A high-harmonic-suppression miniaturized chip-mounted internal matching power amplification device, characterized in that it specifically includes: A distributed amplification module, which includes two groups of GaN sub-units and a non-linear transmission line unit, for realizing power amplification and harmonic suppression, and the GaN sub-units are in one-to-one correspondence with the non-linear transmission line unit and are electrically connected; A filtering module, which is arranged at the output end of the distributed amplification module for filtering the amplified signal; An isolation module, which is arranged between the two groups of GaN sub-units of the distributed amplification module for reducing the noise interference of the input signal; A distortion correction module, which is a CMOS chip and is pre-set with a DPD algorithm model for signal correction of the overall power amplifier; A conformal heat dissipation module, which includes a frame unit and a heat conduction unit for cooling the overall power amplification device.

[0006] Preferably, two groups of GaN sub-units are arranged along the signal transmission direction, and the length calculation methods of the two groups of non-linear transmission line units are as follows: ; In the formula represents the length of the non-linear transmission line unit, represents the speed of light, represents the preset center frequency, represents the effective dielectric constant of the substrate material; By adjusting the lengths of the two groups of non-linear transmission line units, the harmonic phase difference between them is made .

[0007] Preferably, the filtering module adopts a sixth-order elliptic harmonic filter, and its length calculation method is as follows: ; In the formula represents the length of the sixth-order elliptic harmonic filter, and the transfer function when the signal passes through the sixth-order elliptic harmonic filter is expressed as: ; ; ; In the formula represents the transfer function of the signal, represents the complex frequency variable, represents the imaginary unit, represents the angular frequency of the signal, represents the signal frequency, represents the preset cut-off angular frequency, represents the preset cut-off frequency.

[0008] Preferably, the isolation module includes a spiral inductor and a thin-film resistor, and its impedance calculation method is as follows: ; In the formula represents the total impedance of the isolation module, , respectively represent the resistance value of the thin-film resistor and the inductance value of the spiral inductor; By adjusting the inductance value of the spiral inductor, the total impedance of the isolation module is changed to reduce the difference between the output power of the power amplification device and the preset target power; The calculation method for adjusting the inductance value of the spiral inductor according to the output power of the power amplification device and the preset target power is as follows: ; In the formula , respectively represent the output power and the target power, indicating an adjustment operation of the right side to the left side by the arrow.

[0009] Preferably, the preset DPD algorithm model in the distortion correction module adopts a fifth-order memory polynomial model, and its expression is: ; In the formula , respectively represent the th input signal and the th output signal of the model, , respectively represent the maximum values of the memory depth and the nonlinear order, , respectively represent the indexes of the memory depth and the nonlinear order, represents the predistortion coefficient, and the predistortion coefficient is iteratively updated by the least squares method, and the update period is less than 1 μs; When , is the linear predistortion coefficient for compensating linear distortion; When , is the nonlinear predistortion coefficient for compensating nonlinear distortion.

[0010] Preferably, the frame unit in the conformal heat dissipation module adopts a molybdenum-copper frame, and the heat conduction unit adopts a directional diamond microcolumn.

[0011] Preferably, the molybdenum-copper frame is manufactured by a 3D printing process, its honeycomb pore diameter is 200 μm ± 10 μm, the wall thickness is 50 μm ± 5 μm, and the porosity is 60% ± 3%; The growth direction of the directional diamond microcolumn is the crystal orientation, the diameter is 50 μm ± 5 μm, the height is 300 μm ± 20 μm, and the spacing is 200 μm ± 10 μm.

[0012] Compared with the prior art, the beneficial effects of the present invention are: By introducing the cascade design of a multi-stage power amplifier, combining the internal matching technology and the innovative application of high-dielectric ceramics and molybdenum-copper carriers, the present invention successfully solves problems such as gain improvement, harmonic suppression, and thermal management. This solution realizes a miniaturized design, improves the power density and gain, enhances the harmonic suppression performance to -45 dBc, and optimizes the efficiency. At the same time, the combination of the molybdenum-copper carrier and the conformal heat dissipation module can effectively reduce the thermal resistance, extend the service life of the device, meet the requirements of a harsh high-temperature and high-frequency environment, improve the reliability and working efficiency of the system, and reduce the size and weight of the equipment. Brief Description of the Drawings

[0013] Figure 1 This is a schematic diagram of the module of the circuit structure of the present invention. Detailed Embodiments

[0014] To make the objectives, technical solutions, and advantages of the present invention clearer and more understandable, the present invention will be further described in detail below in conjunction with specific embodiments.

[0015] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the present invention should have the ordinary meanings understood by those with ordinary skills in the field to which the present invention pertains. The "first", "second", and similar terms used in the present invention do not denote any order, quantity, or importance, but are only used to distinguish different components. The terms such as "including" or "comprising" mean that the elements or objects appearing before this term cover the elements or objects listed after this term and their equivalents, without excluding other elements or objects. The terms such as "connected" or "coupled" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The terms such as "upper", "lower", "left", "right", etc. are only used to represent relative positional relationships, and when the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0016] Embodiment: Please refer to Figure 1 , the present invention provides a technical solution: A miniaturized chip-type internal matching power amplifier device with high harmonic suppression, specifically including: a distributed amplification module, a filtering module, an isolation module, a distortion correction module, and a conformal heat dissipation module.

[0017] The distributed amplification module includes two groups of GaN sub-units and a non-linear transmission line unit, which are used to achieve power amplification and harmonic suppression, and the GaN sub-units and the non-linear transmission line unit are in one-to-one correspondence and electrically connected. The non-linear transmission line unit, that is, the NLTL unit, is a mature prior art, and its specific principle will not be elaborated here. By dividing the total gate width into two groups of GaN sub-units and applying non-linear phase delays respectively, active cancellation of the second harmonic can be achieved during the power synthesis process, so that harmonic suppression can be carried out in advance. It can be understood that LC circuits are arranged at the front end and the rear end of the GaN sub-unit to act as input and output matching circuits. Since this is a basic circuit setting and a mature prior art in the field, it will not be elaborated here.

[0018] The two groups of GaN sub-units are arranged along the signal transmission direction, and the length calculation method of the two groups of non-linear transmission line units is: ; In the formula represents the length of the non - linear transmission line unit, represents the speed of light, represents the preset center frequency, represents the effective dielectric constant of the substrate material. By adjusting the lengths of the two sets of non - linear transmission line units, the harmonic phase difference between them is made to be .

[0019] In this step, the second - order harmonics generated by the two sets of GaN sub - units form a phase difference (i.e., 180°) after passing through the non - linear transmission line. At the synthesis node, they cancel each other out due to opposite phases, playing a role in harmonic suppression. Moreover, when the fundamental wave signal passes through the non - linear transmission line, the phases are synchronized, and they are superimposed in - phase at the synthesis node, and the gain is not affected. Compared with the traditional technology of simply using an external filter for harmonic suppression, the combination of the two makes the harmonic suppression effect better. After passing through the non - linear transmission line, the second - order harmonic energies cancel each other out. When entering the external filter subsequently, the overall losses of the external filter and the power amplification device are correspondingly reduced, and the efficiency is also higher, realizing the synchronous improvement of efficiency and effect during harmonic suppression.

[0020] Furthermore, this formula - based design method can also adapt to other high - frequency band applications by adjusting the harmonic phase difference. For example, for future 6G high - frequency band applications, the phase difference can be adjusted to to achieve third - order harmonic suppression, thereby reducing the design requirements of designers in the early stage.

[0021] The filtering module is arranged at the output end of the distributed amplification module and is used for filtering the amplified signal.

[0022] The filtering module uses a sixth - order elliptic harmonic filter, which is considered to have a steep roll - off characteristic. It can improve the second - order harmonic suppression to about - 65 dBc, which is better than the general - 63 dBc in the existing technology. The calculation method of the filter length is: ; In the formula represents the length of the sixth - order elliptic harmonic filter.

[0023] The transfer function of the signal when passing through the sixth - order elliptic harmonic filter is expressed as: ; ; ; In the formula represents the transfer function of the signal, represents the complex frequency variable, denotes the imaginary unit, denotes the angular frequency of the signal, denotes the signal frequency, denotes the preset cut-off angular frequency, denotes the preset cut-off frequency.

[0024] Specifically, the filter can adopt a barium titanate ceramic substrate with an effective dielectric constant of 120. The cut-off frequency can be set to 3.5 GHz. Assuming the center frequency is 3.0 GHz, the length of the filter is about 0.74 mm, which is only about 30% of that of a traditional filter (the typical value of a traditional filter is 5 mm x 3 mm). Moreover, the insertion loss is also reduced to about 0.5 dB, which is only about 40% of that of a traditional filter (the typical value of a traditional filter is 1.2 dB). In this way, not only is the size smaller, but the insertion loss is also lower.

[0025] In this step, by introducing a sixth-order elliptic harmonic filter, the design goals of high harmonic suppression, low insertion loss, and miniaturization are achieved, breaking through the trade-off relationship between harmonic suppression and size and loss of traditional filters, thus providing key support for the high efficiency, high stability, and miniaturization of the overall solution.

[0026] The isolation module is arranged between two groups of GaN sub-units of the distributed amplification module to reduce the noise interference of the input signal.

[0027] The isolation module includes a spiral inductor and a thin-film resistor, and its impedance calculation method is: ; In the formula denotes the total impedance of the isolation module, , respectively denote the resistance value of the thin-film resistor and the inductance value of the spiral inductor; By adjusting the inductance value of the spiral inductor, the total impedance of the isolation module is changed to reduce the difference between the output power of the power amplification device and the preset target power; The calculation method for adjusting the inductance value of the spiral inductor according to the output power of the power amplification device and the preset target power is: ; In the formula , respectively denote the output power and the target power, denotes that the right side of the arrow performs an adjustment operation on the left side. Specifically, it is to multiply the original inductance value of the spiral inductor according to the calculation method on the right side of the arrow, and use the product as the new inductance value of the spiral inductor, so as to achieve the adjustment of the inductance value of the spiral inductor.

[0028] In this step, by adjusting the inductance value of the spiral inductor, the output power can be made closer to the target value, so as to reduce energy loss and improve efficiency, enabling the system to adapt to different working conditions (such as temperature, power supply fluctuations, etc.). Further, since the isolation module is integrated between two groups of GaN sub-units, no additional packaging space is required, which not only reduces the packaging steps and improves production efficiency, but also reduces material consumption and saves production costs.

[0029] The distortion correction module is a CMOS chip and is pre-set with a DPD algorithm model for signal correction of the overall power amplifier. The pre-set DPD algorithm model in the distortion correction module adopts a 5th-order memory polynomial model, and its expression is: ; In the formula and respectively represent the th input signal and the th output signal of the model, and respectively represent the maximum values of the memory depth and the non-linear order, and respectively represent the indices of the memory depth and the non-linear order, represents the pre-distortion coefficient, and the pre-distortion coefficient is iteratively updated using the least squares method, and the update period is less than 1 μs; When , is the linear pre-distortion coefficient for compensating linear distortion, such as gain compression, phase drift, etc.; When , is the non-linear pre-distortion coefficient for compensating non-linear distortion, such as intermodulation distortion.

[0030] Specifically, the signal flow can be expressed as input signal → distributed amplification module → filtering module → isolation module → distortion correction module → output signal. The distortion correction module is precisely used to correct the signal about to be output. The memory depth can be set to 3, which can cover the group delay of 30 ns of the power amplifier (corresponding to the memory effect of a 5G NR 100 MHz bandwidth signal), thus effectively compensating for inter-symbol interference.

[0031] In this step, by introducing a fifth-order memory polynomial, not only can signal distortion be compensated, but also through differentiating the predistortion coefficients, linear and nonlinear distortions can be compensated synergistically to achieve full-dimensional compensation of signal distortion. Compared with traditional second- and third-order models, this method can accurately capture the complex nonlinear characteristics of the power amplifier, reduce the error vector magnitude in typical scenarios, and thus improve the compensation accuracy of signal distortion.

[0032] The conformal heat dissipation module includes a frame unit and a heat conduction unit, and is used to cool down the overall power amplification device. The frame unit in the conformal heat dissipation module uses a molybdenum-copper frame, and the heat conduction unit uses directional diamond microcolumns.

[0033] The molybdenum-copper frame is manufactured by 3D printing technology. Its honeycomb pore diameter is 200μm ± 10μm, the wall thickness is 50μm ± 5μm, and the porosity is 60% ± 3%. This material has both high thermal conductivity (220 W / m·K) and low coefficient of thermal expansion (6.5 ppm / °C), can achieve thermal expansion matching, and through 3D printing, can achieve complex topological structures, reduce its overall weight, and is set as a honeycomb pore type, which can enhance the heat dissipation surface area and improve the heat exchange efficiency.

[0034] The growth direction of the directional diamond microcolumns is the crystal orientation, the diameter is 50μm ± 5μm, the height is 300μm ± 20μm, and the spacing is 200μm ± 10μm. The axial thermal conductivity of the diamond microcolumns grown in the crystal orientation reaches 2000 W / m·K (only 50 W / m·K transversely), which can achieve directional heat conduction, form a vertical heat transfer channel, and is more conducive to the overall heat dissipation of the power amplification device.

[0035] In this step, through the collaborative design of the molybdenum-copper honeycomb frame and the directional diamond microcolumns, not only can three-dimensional efficient heat dissipation be achieved, but also this miniaturized and lightweight design can meet the design requirements of "thin and highly integrated", and the process is simpler, thus reducing the machining steps and achieving a reduction in production costs.

[0036] In summary, through optimizing the cascade design of the multi-stage power amplifier, combining the internal matching technology and the innovative application of high-dielectric ceramics and molybdenum-copper carriers, the present invention has successfully solved problems such as gain improvement, harmonic suppression, and thermal management. This solution achieves a miniaturized design, significantly improves the power density and gain, enhances the harmonic suppression performance to -45dBc, and also optimizes the efficiency. At the same time, the combination of molybdenum-copper carriers and the conformal heat dissipation module can effectively reduce the thermal resistance, extend the service life of the device, meet the requirements of harsh high-temperature and high-frequency environments, improve the reliability and working efficiency of the system, and significantly reduce the size and weight of the equipment.

[0037] The above formulas are all dimensionless and take their numerical values for calculation. The formulas are obtained by collecting a large amount of data for software simulation to get a formula closest to the actual situation. The preset parameters in the formulas are set by those skilled in the art according to the actual situation.

[0038] The above embodiments can be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented using software, the above embodiments can be implemented in whole or in part in the form of a computer program product. Those skilled in the art will realize that the units and algorithm steps of the examples described in conjunction with the embodiments disclosed herein can be implemented by electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are executed by hardware or software methods depends on the specific application and design constraints of the technical solution.

[0039] The units described as separate components may or may not be physically separated. The components shown as units may or may not be physical units, and may be located in one place or distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0040] The above is only the specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present application, and all of them should be covered by the protection scope of the present application.

Claims

1. A miniaturized on-chip internally matched power amplifier device with high harmonic suppression, characterized in that: Specifically include: A distributed amplification module, the distributed amplification module comprising two groups of GaN sub-units and a nonlinear transmission line unit, for achieving power amplification and harmonic suppression, and the GaN sub-units correspond to the nonlinear transmission line units one by one and are electrically connected; A filtering module, which is arranged at the output end of the distributed amplification module and is used to filter the amplified signal; An isolation module, which is arranged between two groups of GaN sub-units of the distributed amplification module and is used to reduce noise interference of the input signal; A distortion correction module, which is a CMOS chip and is pre-installed with a DPD algorithm model for performing signal correction on the power amplifier as a whole; A conformal heat dissipation module comprises a frame unit and a heat conduction unit, and is used to dissipate heat and cool the entire power amplifier device.

2. A miniaturized on-chip internally matched power amplifier device with high harmonic suppression according to claim 1, characterized in that: The two groups of GaN subunits are arranged along the signal transmission direction, and the lengths of the two groups of nonlinear transmission line units are calculated as follows: ； In the formula represents the length of the nonlinear transmission line unit, represents the speed of light, Indicates the preset center frequency. represents the effective dielectric constant of the substrate material; By adjusting the lengths of the two sets of nonlinear transmission line units, the harmonic phase difference between them is .

3. A miniaturized on-chip internally matched power amplifier device with high harmonic suppression according to claim 1, characterized in that: The filtering module adopts a sixth-order elliptical harmonic filter, and its length is calculated as follows: ； In the formula represents the length of the sixth elliptic harmonic filter. The transfer function of the signal when it passes through the sixth elliptic harmonic filter is expressed as: ； ； ； In the formula represents the transfer function of the signal, represents a complex frequency variable, represents the imaginary unit, represents the angular frequency of the signal, represents the signal frequency, represents the preset cutoff frequency, Indicates the preset cutoff frequency.

4. The miniaturized on-chip internally matched power amplifier device with high harmonic suppression according to claim 1, characterized in that: The isolation module includes a spiral inductor and a thin film resistor, and its impedance is calculated as follows: ； In the formula Represents the total impedance of the isolation module, , They represent the resistance value of the thin film resistor and the inductance value of the spiral inductor respectively; By adjusting the inductance value of the spiral inductor, the total impedance of the isolation module is changed to reduce the difference between the output power of the power amplifier device and the preset target power; The calculation method for adjusting the inductance value of the spiral inductor according to the output power of the power amplifier device and the preset target power is: ； In the formula , represent the output power and target power respectively, Indicates that the right side of the arrow adjusts the left side.

5. The miniaturized on-chip internally matched power amplifier device with high harmonic suppression according to claim 1, characterized in that: The DPD algorithm model preset in the distortion correction module adopts a 5th-order memory polynomial model, and its expression is: ； In the formula , Respectively represent the model The input signal and output signal, , Respectively represent the maximum value of memory depth and nonlinear order, , Represent the index of memory depth and nonlinear order respectively, Represents the predistortion coefficient, and the least square method is used to calculate the predistortion coefficient Iterative update with an update cycle of less than 1μs; when hour, is the linear predistortion coefficient, used to compensate for linear distortion; when hour, is the nonlinear predistortion coefficient, used to compensate for nonlinear distortion.

6. The miniaturized on-chip internally matched power amplifier device with high harmonic suppression according to claim 1, characterized in that: The frame unit in the conformal heat dissipation module adopts a molybdenum-copper frame, and the heat conduction unit adopts a directional diamond microcolumn.

7. A miniaturized on-chip internally matched power amplifier device with high harmonic suppression according to claim 6, characterized in that: The molybdenum-copper frame is manufactured by 3D printing technology, and its honeycomb aperture is 200μm±10μm, the wall thickness is 50μm±5μm, and the porosity is 60%±3%; The growth direction of the oriented diamond microcolumn is the crystal direction, the diameter is 50 μm±5 μm, the height is 300 μm±20 μm, and the spacing is 200 μm±10 μm.

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