Impedance matching network, all-optical network FTTR equipment and impedance matching method

Abstract

The embodiment of the invention provides an impedance matching network, all-optical network FTTR equipment and an impedance matching method, the impedance matching network comprises a plurality of stages of branch structures, each stage of branch structure comprises a resonance unit, and each resonance unit comprises a plurality of resonance branches and a PIN tube used for electrically connecting the plurality of resonance branches in sequence. According to the invention, the problems that the broadband matching effect is poor, independent optimization is difficult to realize in different frequency bands, and the signal transmission efficiency is reduced in the prior art are solved, and the effects of supporting multi-frequency-band dynamic switching, improving the broadband matching effect and improving the performance and adaptability of FTTR equipment are further achieved.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of communications, and more particularly, to an impedance matching network, a full optical network FTTR device, and an impedance matching method. Background Art

[0002] With the rapid development of Wireless Fidelity (WiFi) technology, full optical network (Fiber to the Room, FTTR) devices have been widely used in home, office, and industrial scenarios. FTTR devices need to support efficient signal transmission in multiple frequency bands (such as WiFi 2.4 GHz, 5 GHz, and 6 GHz) to achieve high-speed and stable network coverage. However, the impedance matching networks in related technologies have the following problems: First, the broadband matching effect is poor, and it is difficult to achieve independent optimization in different frequency bands, resulting in a decrease in signal transmission efficiency; second, the inductor-capacitor (LC) matching circuit has a high cost and a large volume, making it difficult to meet the requirements of FTTR devices for miniaturization and low cost; finally, the parasitic effects are significant in high frequency bands (such as 6 GHz), and the insertion loss increases, affecting signal stability. Summary of the Invention

[0003] The embodiments of the present invention provide an impedance matching network and a full optical network FTTR device to at least solve the problem in related technologies that the broadband matching effect is poor, and it is difficult to achieve independent optimization in different frequency bands, resulting in a decrease in signal transmission efficiency.

[0004] According to an embodiment of the present invention, an impedance matching network is provided, which includes a multi-stage stub structure. Each stage of the stub structure includes a resonant unit, and each resonant unit includes a plurality of resonant stubs and PIN diodes for electrically connecting the plurality of resonant stubs in sequence.

[0005] According to another embodiment of the present invention, a full optical network FTTR device is provided, which includes the above-mentioned impedance matching network.

[0006] According to another embodiment of the present invention, an impedance matching method for the above-mentioned radio frequency baseband chip is provided, including: detecting the channel frequency; matching a preset code table according to the channel frequency, and controlling the on-off state of the corresponding PIN diode according to the matched preset code table.

[0007] According to still another embodiment of the present invention, a computer-readable storage medium is further provided. A computer program is stored in the computer-readable storage medium, and the computer program is configured to execute the steps in any one of the above method embodiments when running.

[0008] According to another embodiment of the present invention, an electronic device is further provided, including a memory and a processor. A computer program is stored in the memory, and the processor is configured to run the computer program to execute the steps in any one of the above method embodiments.

[0009] According to another embodiment of the present invention, a computer program product is further provided, including a computer program, and when the computer program is executed by a processor, the steps in any one of the above method embodiments are implemented.

[0010] Through the above embodiments of the present invention, since the impedance matching network includes a multi-stage stub structure, each stage of the stub structure includes a resonant unit, and each resonant unit includes a plurality of resonant stubs and PIN diodes for sequentially electrically connecting the plurality of resonant stubs, the multi-stage stub structure can increase or decrease the resonant stubs and PIN diodes according to different requirements. This dynamic control strategy enables the impedance matching network to match the frequency bands in different working environments. Therefore, the problem of poor broadband matching effect in the related art, difficulty in achieving independent optimization in different frequency bands, and resulting in a decrease in signal transmission efficiency is solved, and further, the effects of supporting multi-band dynamic switching, improving the broadband matching effect, and improving the performance and adaptability of the FTTR device are achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 is a schematic diagram (one) of an impedance matching network according to an embodiment of the present invention;

[0012] Figure 2 is a schematic diagram of a multi-stage stub structure according to an embodiment of the present invention;

[0013] Figure 3 is a schematic diagram of the welding of an impedance matching network and a radio frequency trace according to an embodiment of the present invention;

[0014] Figure 4 is a schematic diagram of the mounting of an impedance matching network and a radio frequency trace according to an embodiment of the present invention;

[0015] Figure 5 is a schematic diagram (two) of an impedance matching network according to an embodiment of the present invention;

[0016] Figure 6 is a schematic diagram of a control line connection point according to an embodiment of the present invention;

[0017] Figure 7 is a flowchart of an impedance matching method according to an embodiment of the present invention;

[0018] Figure 8 is a schematic diagram (three) of an impedance matching network according to an embodiment of the present invention;

[0019] Figure 9It is a three-dimensional schematic diagram of an impedance matching network according to an embodiment of the present invention. Detailed implementation manners

[0020] In the following, embodiments of the present invention will be described in detail with reference to the accompanying drawings and in conjunction with the embodiments.

[0021] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily have to be used to describe a specific order or sequence.

[0022] Figure 1 It is a schematic diagram (one) of an impedance matching network according to an embodiment of the present invention. As Figure 1 shown, it includes a multi-stage stub structure. Among them, each stage of the stub structure includes a resonant unit, and each resonant unit includes a plurality of resonant stubs and PIN diodes for electrically connecting the plurality of resonant stubs in sequence.

[0023] Exemplarily, Figure 2 It is a schematic diagram of a multi-stage stub structure according to an embodiment of the present invention. As Figure 2 shown, where 2-1 is a resonant stub and 2-2 is a PIN diode. Figure 1 、 2 Taking the multi-stage stub structure as a three-stage stub structure as an example, Figure 1 it includes a first resonant unit 1-2, a second resonant unit 1-3, and a third resonant unit 1-4. The first resonant unit 1-2 includes two resonant stubs and one PIN diode, the second resonant unit 1-3 includes three resonant stubs and two PIN diodes, and the third resonant unit 1-4 includes four resonant stubs and three PIN diodes.

[0024] It should be noted that the multi-stage stub structure can also be a four-stage stub structure, a five-stage stub structure, etc. The multi-stage stub structure can increase or decrease the resonant stubs according to different requirements. For example, the first resonant unit can also include five resonant stubs and four PIN diodes, the second resonant unit includes two resonant stubs and one PIN diode, the third resonant unit includes six resonant stubs and five PIN diodes, and the fourth resonant unit includes two resonant stubs and one PIN diode. The lengths of the resonant stubs can be the same or different. The specific multi-stage stub structure can be set according to the requirements of the actual scenario (such as the operating frequency band, bandwidth, etc.). The present application does not limit this here.

[0025] In an exemplary embodiment, the impedance matching network further includes: a pad, connected to the top of the multi-stage stub structure, for welding on the RF trace of the device that needs impedance matching.

[0026] Exemplarily, if the impedance matching network is used as an external device, it can be through Figure 1The pads 1-5 solder the impedance matching network onto the RF trace of the device that requires impedance matching. Figure 3 is a schematic diagram of the impedance matching network soldered to the RF trace according to an embodiment of the present invention, as Figure 3 shown, where 3-1 is the RF trace and 3-2 is the back of the device. The impedance matching network can be directly soldered at any position on the RF trace.

[0027] Exemplarily, if the impedance matching network is not used as an external device, the impedance matching network can be directly mounted around the RF trace. Figure 4 is a schematic diagram of the impedance matching network mounted around the RF trace according to an embodiment of the present invention, as Figure 4 shown, where 4-1 is the RF trace. The impedance matching network can be directly mounted around the RF trace.

[0028] In an exemplary embodiment, the impedance matching network further includes:

[0029] A dielectric substrate, multi-stage stubs, and pads are disposed on the front surface of the dielectric substrate;

[0030] A metal bottom plate is disposed on the back surface of the dielectric substrate to form a metal reference ground for the resonant unit.

[0031] Exemplarily, Figure 1 the dielectric substrate 1-1 in can be a Printed Circuit Board (abbreviated as PCB), and the metal bottom plate 1-6 can be a structure with 1 oz (ounce) of copper plated on the printed circuit board.

[0032] In an exemplary embodiment, the multi-stage stubs are etched on the metal layer on the front surface of the dielectric substrate, the PIN diodes are surface-mounted on the metal layer, and the pads are formed by etching the metal plated on the dielectric substrate.

[0033] Exemplarily, after copper plating on the front surface of the dielectric substrate 1-1 in Figure 1 , etching processing can be performed according to a specific shape to implement the first resonant unit 1-2, the second resonant unit 1-3, the third resonant unit 1-4, and the pads 1-5. The PIN diodes are surface-mounted by welding.

[0034] In an exemplary embodiment, the impedance matching network further includes an RF baseband chip and a control line.

[0035] The RF baseband chip is electrically connected to the multi-stage stubs through the control line.

[0036] The RF baseband chip is used to control the switching state of the PIN diodes.

[0037] Exemplarily, Figure 5Schematic diagram (II) of an impedance matching network according to an embodiment of the present invention, as Figure 5 shown, where 5-1 is the control line. The radio frequency baseband chip can control the switching state of the PIN diode through the control line, thereby realizing the length transformation of the stub, adjusting the position of the resonance point, and matching different frequency bands.

[0038] In an exemplary embodiment, the connection point of the control line is located at the positive pole in the conduction direction of the PIN diode.

[0039] Exemplarily, Figure 6 Schematic diagram of the connection point of the control line according to an embodiment of the present invention, as Figure 6 shown, the dot is the connection point for controlling the PIN diode. If a voltage is applied in the -x direction of the PIN network, the conduction direction of the PIN diode is from -x to +x, and the connection point of the control line is located at the positive pole of the PIN diode, that is, above the PIN diode in the figure.

[0040] In an exemplary embodiment, the lengths of all resonant stubs of different resonant units are different.

[0041] Exemplarily, as Figure 1 shown, the lengths of all resonant stubs between the first resonant unit 1-2, the second resonant unit 1-3, and the third resonant unit 1-4 are different.

[0042] In an exemplary embodiment, the all-optical network FTTR device may include the impedance matching network in any of the above embodiments.

[0043] Through the above embodiments, a multi-stage stub structure is used to replace the traditional LC matching circuit. This multi-stage stub structure can perform dynamic structural adjustment according to the operating frequency band, bandwidth, etc. of the actual application scenario, so as to match multiple frequency bands. Therefore, the problem of poor broadband matching effect in the related art, difficulty in achieving independent optimization in different frequency bands, and resulting in a decrease in signal transmission efficiency is solved, achieving the effects of supporting multi-band dynamic switching, improving the broadband matching effect, and improving the performance and adaptability of the FTTR device.

[0044] In this embodiment, an impedance matching method running on the above radio frequency baseband chip is provided. Figure 7 Flowchart of the impedance matching method according to an embodiment of the present invention, as Figure 7 shown, this process includes the following steps:

[0045] Step S702, detecting the channel frequency.

[0046] For example, the RF baseband chip can determine the channel frequency to be used according to the current communication requirements or network configuration, so as to know the actual requirements of the current scene and then control the switch state of the PIN tube. Detecting the channel frequency is a prerequisite for dynamic matching. Through accurate detection, this embodiment can optimize signal transmission in a targeted manner to ensure that efficient and stable matching effects can be maintained in different frequency bands.

[0047] Step S704, matching a preset code table according to the channel frequency, so as to control the switch state of the corresponding PIN tube according to the matched preset code table.

[0048] For example, Table 1 is a part of the preset code table, as shown in Table 1. 0 in the code table represents that the PIN tube is turned off, and 1 represents that the PIN tube is turned on, thereby controlling the length of the branch. The code table is simulated and confirmed at the beginning of the design, and the configuration command of the WIFI channel selection is embedded. In the implementation stage, the code table control code can be stored in the baseband control channel program. For example, Figure 6 There are 6 control points in , so the control code is 6 bits, one bit corresponds to one control point.

[0049] Table 1

[0050]

[0051] For example, according to the detected channel frequency, the corresponding PIN tube control code is quickly selected from the preset code table. The preset code table covers the best matching schemes under various frequency scenarios. Through precise matching, the switch state of the PIN tube can be effectively controlled, and then the multi-level branch structure can be adjusted to meet the requirements of the current channel.

[0052] In an exemplary embodiment, step S704 includes:

[0053] According to the channel frequency, search for a matching control code in the preset code table;

[0054] The control code is sent to the PIN tube through the control line to control the switch state of the corresponding PIN tube according to the matching control code.

[0055] For example, when a channel frequency is detected, it is necessary to find the corresponding control code in the preset code table, and send the matching control code to the PIN tube through the control line. The PIN tube will be turned on or off accordingly according to the control code. The change of the PIN tube state will adjust the effective length of the resonant branch in the entire matching network, thereby changing the resonant frequency of the network to match the selected channel frequency. The dynamic adjustment of the PIN tube enables the matching network to switch quickly between different frequency bands, effectively improving the signal transmission efficiency and enhancing the performance and environmental adaptability of the FTTR equipment.

[0056] In an exemplary embodiment, before step S702, it includes:

[0057] Divide a wide frequency band into multiple sub - frequency bands, where one sub - frequency band corresponds to one control code, and the preset code table includes multiple control codes.

[0058] Exemplarily, a wide frequency band (such as 5GHz) can be divided into n sub - frequency bands (such as 80MHz), and the wide frequency band is finely divided into multiple narrower sub - frequency bands. Each sub - frequency band has an independent control code according to its characteristics, corresponding to an entry in the preset code table. This division strategy enables the matching effect of each sub - frequency band to be independently optimized, thus avoiding the problem of signal efficiency decline during wide - band matching. Based on the fact that each sub - frequency band corresponds to one control code, a preset code table containing all necessary control codes is generated, thereby achieving effective matching of broadband signals as a whole.

[0059] Through the above steps, by controlling the on - off of each PIN diode in the PIN network, changing the length of the stub, and then adjusting the position of the resonant point, different frequency bands can be matched. When the operating frequency of the device changes, the matching network can also be quickly adjusted to ensure the efficiency and quality of signal transmission. It solves the problem in the related technology that the wide - band matching effect is poor, it is difficult to achieve independent optimization in different frequency bands, resulting in a decline in signal transmission efficiency, and thus achieves the effects of supporting multi - band dynamic switching, improving the wide - band matching effect, and enhancing the performance and adaptability of the FTTR device.

[0060] Embodiment

[0061] This embodiment takes the 5G full - band matching as an example.

[0062] Figure 8 is a schematic diagram (III) of the impedance matching network according to an embodiment of the present invention, as Figure 8 shown Figure 9 is a three - dimensional schematic diagram of the impedance matching network according to an embodiment of the present invention, as Figure 9 shown.

[0063] The length, width, and height of the dielectric substrate are L, W, and H (the length unit is mm), the dielectric constant is e1, where L = 3mm, W = 5mm, H = 1.41mm, and e1 = 4.2 (unitless);

[0064] Each stub in each resonant unit has a width of W1 and lengths of L11, L12, L21, L22, L23, L31, L32, L33, L34 respectively, and a thickness of t. Among them, L11 = 1.18 mm, L12 = 0.75 mm, L21 = 0.16 mm, L22 = 0.6 mm, L23 = 0.49 mm, L31 = 0.2 mm, L32 = 0.31 mm, L33 = 0.3 mm, L34 = 0.2 mm, W1 = 0.2 mm, and t = 0.0036 mm;

[0065] The length, width, and thickness of the pad are L1, L2, t respectively, where L1 = 0.5 mm, L2 = 1.8 mm, and t = 0.0036 mm.

[0066] In the low-frequency band, by selecting a specific PIN diode control sequence, the present invention achieves efficient matching of radio frequency signals in the range of 5150 to 5300 MHz. At the frequency point of 5180 MHz, the reflection coefficient S(1,1) is close to 0.013, and the impedance is close to 50 ohms, indicating that the reflection loss of the signal in the low-frequency band is minimized and the transmission efficiency is the highest.

[0067] When the channel switches to the middle-frequency band, the matching network automatically adjusts the switching state of the PIN diodes according to the new frequency range to optimize the signal matching within 5300 to 5600 MHz. The reflection coefficient S(1,1) remains at a low level, and the impedance is stable near 50 ohms, ensuring the signal quality and coverage range in the middle-frequency band.

[0068] In the high-frequency band (5600 to 5900 MHz), the present invention also demonstrates excellent matching ability. At higher frequencies, the matching network can also stabilize the impedance at 50 ohms, and the reflection coefficient is maintained within an ideal range, which proves the excellent performance of the present invention scheme in the high-frequency band.

[0069] Compared with the method of the present embodiment, the method of the related art is difficult to achieve a consistent matching effect in a wide frequency band. Especially when the frequency switches, its matching performance drops significantly. In contrast, the method of the present embodiment, through a multi-band adaptive matching strategy, combined with the collaborative work of the matching array and the PIN network, can maintain stable signal quality and efficient energy transmission regardless of whether it is in the low-frequency, middle-frequency, or high-frequency band. Therefore, it can solve the problem of poor wide-frequency matching effect in the related art, which is difficult to achieve independent optimization in different frequency bands, resulting in a decrease in signal transmission efficiency, and thus achieves the effects of supporting multi-band dynamic switching, improving the wide-frequency matching effect, and improving the performance and adaptability of the FTTR device.

[0070] Through the description of the above embodiments, those skilled in the art can clearly understand that the method according to the above embodiments can be implemented by means of software plus a necessary general hardware platform. Of course, it can also be implemented by hardware, but in many cases the former is a better implementation. Based on such an understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art can be embodied in the form of a software product. This computer software product is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disc), and includes several instructions for causing a terminal device (which can be a mobile phone, computer, server, or network device, etc.) to execute the methods of the various embodiments of the present invention.

[0071] An embodiment of the present invention further provides a computer-readable storage medium, in which a computer program is stored. Wherein, the computer program is configured to execute the steps in any one of the above method embodiments when running.

[0072] In an exemplary embodiment, the above computer-readable storage medium may include, but is not limited to: USB flash drive, read-only memory (abbreviated as ROM), random access memory (abbreviated as RAM), mobile hard disk, magnetic disk or optical disc and other various media that can store computer programs.

[0073] An embodiment of the present invention further provides an electronic device, including a memory and a processor. A computer program is stored in the memory, and the processor is configured to run the computer program to execute the steps in any one of the above method embodiments.

[0074] In an exemplary embodiment, the above electronic device may further include a transmission device and an input / output device. Wherein, the transmission device is connected to the above processor, and the input / output device is connected to the above processor.

[0075] The specific examples in this embodiment may refer to the examples described in the above embodiments and exemplary embodiments, and will not be repeated here.

[0076] Obviously, those skilled in the art should understand that the above-mentioned modules or steps of the present invention can be implemented by a general-purpose computing device. They can be concentrated on a single computing device or distributed on a network composed of multiple computing devices. They can be implemented by program codes executable by the computing device. Thus, they can be stored in a storage device and executed by the computing device. And in some cases, the steps shown or described can be executed in a different order from here, or they can be separately fabricated into individual integrated circuit modules, or multiple modules or steps among them can be fabricated into a single integrated circuit module for implementation. In this way, the present invention is not limited to any specific combination of hardware and software.

[0077] The above are only the preferred embodiments of the present invention and are not used to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. An impedance matching network, characterized in that: It comprises a multi-level branch structure, wherein each level of the branch structure comprises a resonance unit, and each resonance unit comprises a plurality of resonance branches and a PIN tube for electrically connecting the plurality of resonance branches in sequence.

2. The impedance matching network according to claim 1, characterized in that: Also includes: The soldering pad is connected to the top of the multi-level branch structure and is used for soldering on the radio frequency wiring of the device that needs impedance matching.

3. The impedance matching network according to claim 2, characterized in that: Also includes: A dielectric substrate, the multi-level branches and the pads are arranged on the front side of the dielectric substrate; A metal bottom plate is arranged on the back side of the dielectric substrate to form a metal reference ground of the resonance unit.

4. The impedance matching network according to claim 3, characterized in that: The multi-level branches are etched on the metal layer on the front side of the dielectric substrate, the PIN tube is attached to the metal layer, and the pad is formed by etching the metal plated on the dielectric substrate.

5. The impedance matching network according to claim 1, characterized in that: It also includes RF baseband chips and control lines. The radio frequency baseband chip is electrically connected to the multi-stage branches through the control line. The radio frequency baseband chip is used to control the switch state of the PIN tube.

6. The impedance matching network according to claim 1, characterized in that ,The lengths of all resonant branches of different resonant units are different.

7. The impedance matching network according to claim 5, characterized in that: The connection point of the control line is located at the positive pole of the conducting direction of the PIN tube.

8. The impedance matching network according to any one of claims 1 to 7, characterized in that , the multi-level branch structure is a three-level branch structure.

9. An all-optical network FTTR device, characterized in that: An impedance matching network comprising any one of claims 1-8.

10. An impedance matching method, characterized in that: The radio frequency baseband chip as claimed in claim 5 comprises: Detect channel frequency; A preset code table is matched according to the channel frequency to control the switch state of the corresponding PIN tube according to the matched preset code table.

11. The method according to claim 10, characterized in that Matching a preset code table according to the channel frequency to control the switch state of the corresponding PIN tube according to the matched preset code table includes: According to the channel frequency, searching for a matching control code in a preset code table; The control code is sent to the PIN tube through the control line to control the switch state of the corresponding PIN tube according to the matched control code.

12. The method according to claim 10, characterized in that Before detecting the channel frequency, include: A wide frequency band is divided into a plurality of sub-frequency bands, wherein one of the sub-frequency bands corresponds to a control code, and the preset code table includes a plurality of the control codes.

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