Light emitting diode and method of manufacturing the same

Abstract

The present disclosure provides a light emitting diode and a preparation method thereof, and belongs to the technical field of optoelectronic manufacturing. The light emitting diode comprises: a buffer layer, a filling layer, a first semiconductor layer, a light emitting layer, an electron blocking layer and a second semiconductor layer which are sequentially stacked; the electron blocking layer comprises a first electron blocking sublayer and a second electron blocking sublayer, the second semiconductor layer comprises a low-temperature semiconductor sublayer and a high-temperature semiconductor sublayer, and the first electron blocking sublayer, the low-temperature semiconductor sublayer, the second electron blocking sublayer and the high-temperature semiconductor sublayer are sequentially stacked on the light emitting layer; the first electron blocking sublayer is an AlN / GaN / AlGaN stack, the low-temperature semiconductor sublayer is a GaN / AlGaN / InGaN stack, and the second electron blocking sublayer is an AlGaN layer.

Description

Technical Field

[0001] This disclosure relates to the field of optoelectronic manufacturing technology, and in particular to a light-emitting diode and its fabrication method. Background Technology

[0002] Light-emitting diodes (LEDs) are highly influential new products in the optoelectronics industry. They are characterized by small size, long lifespan, rich and colorful colors, and low energy consumption. They are widely used in lighting, displays, signal lights, backlights, toys and other fields.

[0003] In related technologies, light-emitting diodes typically include a buffer layer, a filler layer, a first semiconductor layer, a light-emitting layer, an electron blocking layer, and a second semiconductor layer stacked sequentially.

[0004] Although the electron blocking layer can block electrons, it also has a significant impact on the holes injected into the light-emitting layer by the second semiconductor layer, thereby affecting photon recombination radiation and luminous efficiency. Summary of the Invention

[0005] This disclosure provides a light-emitting diode and its fabrication method, which can improve the blocking of holes by the electron blocking layer and increase the luminous efficiency of the light-emitting diode. The technical solution is as follows:

[0006] On one hand, a light-emitting diode (LED) is provided, the LED comprising:

[0007] The layers are stacked in sequence: a buffer layer, a filler layer, a first semiconductor layer, a light-emitting layer, an electron-blocking layer, and a second semiconductor layer.

[0008] The electron blocking layer includes a first electron blocking sublayer and a second electron blocking sublayer, and the second semiconductor layer includes a low-temperature semiconductor sublayer and a high-temperature semiconductor sublayer. The first electron blocking sublayer, the low-temperature semiconductor sublayer, the second electron blocking sublayer and the high-temperature semiconductor sublayer are sequentially stacked on the light-emitting layer.

[0009] The first electron blocking sublayer is an AlN / GaN / AlGaN stack, the low-temperature semiconductor sublayer is a GaN / AlGaN / InGaN stack, and the second electron blocking sublayer is an AlGaN layer.

[0010] Optionally, the thicknesses of the AlN, GaN, and AlGaN layers in the first electron blocking sublayer are 2–4 nm, 1–3 nm, and 2–3 nm, respectively.

[0011] Optionally, the Al composition in the AlN and AlGaN layers of the first electron blocking sublayer is 10-15% and 5-10%, respectively.

[0012] Optionally, the thicknesses of the GaN, AlGaN, and InGaN layers in the low-temperature semiconductor sublayer are 5–10 nm, 10–20 nm, and 15–30 nm, respectively.

[0013] Optionally, the Al content in the AlGaN layer of the low-temperature semiconductor sublayer is 5-10%.

[0014] Optionally, the second electron-blocking sublayer is Al. y Ga 1-y N layers, 0.05 <y<0.3。

[0015] Optionally, the thickness of the second electron blocking sublayer is 5–10 nm.

[0016] On the other hand, a method for fabricating a light-emitting diode is provided, the method comprising:

[0017] Create a buffer layer;

[0018] A filler layer is made on the buffer layer;

[0019] A first semiconductor layer, a light-emitting layer, an electron-blocking layer, and a second semiconductor layer are sequentially fabricated on the filler layer.

[0020] The electron blocking layer includes a first electron blocking sublayer and a second electron blocking sublayer, and the second semiconductor layer includes a low-temperature semiconductor sublayer and a high-temperature semiconductor sublayer. The first electron blocking sublayer, the low-temperature semiconductor sublayer, the second electron blocking sublayer and the high-temperature semiconductor sublayer are sequentially stacked on the light-emitting layer.

[0021] The first electron blocking sublayer is an AlN / GaN / AlGaN stack, the low-temperature semiconductor sublayer is a GaN / AlGaN / InGaN stack, and the second electron blocking sublayer is an AlGaN layer.

[0022] Optionally, the growth temperature of the AlN / GaN / AlGaN stack in the first electron blocking sublayer is 800–900°C.

[0023] Optionally, the growth temperatures of the GaN, AlGaN, and InGaN layers in the low-temperature semiconductor sublayer are 700–750°C, 750–800°C, and 800–850°C, respectively.

[0024] The beneficial effects of the technical solutions provided in this disclosure include at least the following:

[0025] In the light-emitting diode provided in this embodiment, an AlN / GaN / AlGaN stack is arranged behind the light-emitting layer. The AlN / GaN / AlGaN stack includes a high-energy AlN layer, forming a first-wave electron blocking barrier that filters and blocks a portion of electrons. Next, a GaN / AlGaN / InGaN stack is formed as the low-temperature semiconductor sublayer. This serves two purposes: to provide as many holes as possible and to prevent the second wave of electrons from leaking into the high-temperature semiconductor sublayer. Then, a second electron blocking sublayer is formed. Due to the presence of the first electron blocking sublayer, the Al content in the second electron blocking sublayer is significantly reduced compared to a single electron blocking layer. Therefore, although the second electron blocking sublayer is close to the high-temperature semiconductor sublayer, the electron blocking effect is not affected by the significant reduction in Al content, as two electron blocking processes have already occurred. Simultaneously, due to the lower barrier, holes can move in large quantities towards the electron well, forming a continuous hole flow. Because electrons are triple-blocked, non-radiative recombination is greatly reduced. The formation of a stable hole flow significantly enhances radiative recombination, ultimately improving the luminous efficiency of the light-emitting diode. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a schematic diagram of the structure of a light-emitting diode provided in an embodiment of this disclosure;

[0028] Figure 2 This is a schematic diagram of another light-emitting diode structure provided in an embodiment of this disclosure;

[0029] Figure 3 This is a flowchart of a method for fabricating a light-emitting diode provided in an embodiment of this disclosure;

[0030] Figure 4 This is a flowchart of another method for fabricating a light-emitting diode provided in this embodiment.

[0031] The attached figures are labeled as follows:

[0032] 100: Substrate; 101: Buffer layer; 102: Filler layer; 103: First semiconductor layer; 104: Light-emitting layer; 105: Electron blocking layer; 106: Second semiconductor layer; 151: First electron blocking sublayer; 152: Second electron blocking sublayer; 161: Low-temperature semiconductor sublayer; 162: High-temperature semiconductor sublayer. Detailed Implementation

[0033] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0034] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” “third,” and similar terms used in this patent application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “an” or “a” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms “comprising” or “including” and similar terms mean that the elements or objects preceding “comprising” or “including” encompass the elements or objects listed following “comprising” or “including” and their equivalents, and do not exclude other elements or objects. The terms “connected” or “linked” and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “upper,” “lower,” “left,” “right,” “top,” and “bottom,” etc., are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described objects changes.

[0035] Figure 1 This is a schematic diagram of the structure of a light-emitting diode provided in an embodiment of this disclosure. See also... Figure 1 The light-emitting diode includes:

[0036] The buffer layer 101, the leveling layer 102, the first semiconductor layer 103, the light-emitting layer 104, the electron blocking layer 105, and the second semiconductor layer 106 are stacked in sequence.

[0037] The electron blocking layer 105 includes a first electron blocking sublayer 151 and a second electron blocking sublayer 152, and the second semiconductor layer 106 includes a low-temperature semiconductor sublayer 161 and a high-temperature semiconductor sublayer 162. The first electron blocking sublayer 151, the low-temperature semiconductor sublayer 161, the second electron blocking sublayer 152 and the high-temperature semiconductor sublayer 162 are sequentially stacked on the light-emitting layer 104.

[0038] The first electron blocking sublayer 151 is an AlN / GaN / AlGaN stack, the low-temperature semiconductor sublayer 161 is a GaN / AlGaN / InGaN stack, and the second electron blocking sublayer 152 is an AlGaN layer.

[0039] In the light-emitting diode provided by the embodiment of the present disclosure, an AlN / GaN / AlGaN stack is arranged behind the light-emitting layer. The AlN / GaN / AlGaN stack includes an AlN layer with a high energy level, forming a first-wave electron blocking barrier to filter and block a part of electrons. Then, the low-temperature semiconductor sub-layer is a GaN / AlGaN / InGaN stack, which is for providing holes as much as possible on the one hand and also for blocking the leakage of the second-wave electrons into the high-temperature semiconductor sub-layer on the other hand. Through the second electron blocking sub-layer, due to the existence of the first electron blocking sub-layer, the Al component in the second electron blocking sub-layer can be reduced more compared with a single electron blocking layer. Therefore, although the second electron blocking sub-layer is closer to the high-temperature semiconductor sub-layer, due to the two previous electron blockings, the second electron blocking sub-layer will not affect the electron blocking effect even when the Al content is significantly reduced. At the same time, due to the lower barrier, holes can move in a large amount towards the quantum well direction, forming a continuous hole current. Since electrons are blocked three times, the non-radiative recombination is greatly reduced. Since it helps to form a stable flow of hole current, the radiative recombination is greatly enhanced, and finally the luminous efficiency of the light-emitting diode is improved.

[0040] In the embodiment of the present disclosure, the buffer layer 101 may include a stacked two-dimensional buffer layer and a three-dimensional nucleation layer.

[0041] In the embodiment of the present disclosure, the first semiconductor layer 103 is a Si-doped layer, and the high-temperature semiconductor sub-layer 162 is a Mg-doped layer.

[0042] Exemplarily, the first semiconductor layer 103 is a Si-doped GaN layer, and the high-temperature semiconductor sub-layer 162 is a Mg-doped GaN layer.

[0043] Figure 2 It is a schematic structural diagram of another light-emitting diode provided by the embodiment of the present disclosure. Refer to Figure 2 , the light-emitting diode further includes: a substrate 100, and a buffer layer 101 is located on the substrate 100.

[0044] In the embodiment of the present disclosure, the substrate 100 may be a sapphire substrate.

[0045] In the embodiment of the present disclosure, both the buffer layer 101 and the planarization layer 102 are GaN layers.

[0046] In the embodiment of the present disclosure, the light-emitting layer 104 may be a multi-quantum well barrier layer.

[0047] Exemplarily, the light-emitting layer 104 is a superlattice composed of 8 to 15 periods of In x Ga 1-x N(0.2 < x < 0.5) quantum wells / GaN (or AlGaN) quantum barriers.

[0048] In this embodiment of the disclosure, the thicknesses of the AlN, GaN, and AlGaN layers in the first electron blocking sublayer 151 are 2–4 nm, 1–3 nm, and 2–3 nm, respectively.

[0049] For example, the thicknesses of the AlN, GaN, and AlGaN layers in the first electron blocking sublayer 151 are 3 nm, 2 nm, and 2.5 nm, respectively.

[0050] In this embodiment of the disclosure, the Al composition in the AlN and AlGaN layers of the first electron blocking sublayer 151 is 10-15% and 5-10%, respectively.

[0051] For example, the Al composition in the AlN and AlGaN layers of the first electron blocking sublayer 151 is 12.5% ​​and 7.5%, respectively.

[0052] In the first electron blocking sublayer 151, the Al composition shows a trend of high at the beginning and low at the end, which can more effectively block electrons and facilitate the forward injection of holes.

[0053] In this embodiment of the disclosure, the growth temperature of the AlN / GaN / AlGaN stack in the first electron blocking sublayer is 800–900°C.

[0054] For example, the growth temperature of the AlN / GaN / AlGaN stack in the first electron blocking sublayer is 850°C.

[0055] In this embodiment of the disclosure, the thicknesses of the GaN, AlGaN, and InGaN layers in the low-temperature semiconductor sublayer 161 are 5–10 nm, 10–20 nm, and 15–30 nm, respectively.

[0056] For example, the thicknesses of the GaN, AlGaN, and InGaN layers in the low-temperature semiconductor sublayer 161 are 7.5 nm, 15 nm, and 22.5 nm, respectively.

[0057] In the low-temperature semiconductor sublayer 161, the thickness of each sublayer shows a trend of being thinner at the front and thicker at the back. The AlGaN and InGaN are thicker because Al / In doping is an impurity, which is not conducive to crystal growth. Thicker layers are more conducive to the entry of Al / In doping, thereby achieving the purpose of growing the low-temperature semiconductor sublayer.

[0058] In this embodiment of the disclosure, the Al composition in the AlGaN layer of the low-temperature semiconductor sublayer 161 is 5-10%.

[0059] For example, the Al content in the AlGaN layer of the low-temperature semiconductor sublayer 161 is 7.5%.

[0060] In the embodiments of the present disclosure, the growth temperatures of the GaN, AlGaN, and InGaN layers in the low-temperature semiconductor sublayer are 700-750 °C, 750-800 °C, and 800-850 °C, respectively.

[0061] Exemplarily, the growth temperatures of the GaN, AlGaN, and InGaN layers in the low-temperature semiconductor sublayer are 725 °C, 7755 °C, and 825 °C, respectively.

[0062] In the embodiments of the present disclosure, the second electron blocking sublayer 152 is an Al y Ga 1-y N layer, where 0.05 < y < 0.3.

[0063] In this implementation, the Al component value is 0.05 < y < 0.3, which is much smaller than the value (0.2 < y < 0.5) in the related art for a single electron blocking layer, and the Al component is significantly reduced.

[0064] Exemplarily, the value of y is 0.05 or 0.06.

[0065] In the embodiments of the present disclosure, the thickness of the second electron blocking sublayer 152 is 5-10 nm.

[0066] Exemplarily, the thickness of the second electron blocking sublayer 152 is 8 nm.

[0067] In the embodiments of the present disclosure, the thickness of the high-temperature semiconductor sublayer 162 is 3-5 nm.

[0068] Exemplarily, the thickness of the high-temperature semiconductor sublayer 162 is 4 nm.

[0069] It should be noted that in the embodiments of the present disclosure, the structure of the above light-emitting diode can be selectively increased or decreased, and the present disclosure does not limit this.

[0070] Figure 3 It is a flowchart of a method for manufacturing a light-emitting diode provided by the embodiments of the present disclosure. As Figure 3 shown, the manufacturing method includes:

[0071] Step 301: Fabricate a buffer layer.

[0072] Step 302: Fabricate a planarizing layer on the buffer layer.

[0073] Step 303: Sequentially fabricate a first semiconductor layer, a light-emitting layer, an electron blocking layer, and a second semiconductor layer on the planarizing layer.

[0074] The electron blocking layer includes a first electron blocking sublayer and a second electron blocking sublayer, and the second semiconductor layer includes a low-temperature semiconductor sublayer and a high-temperature semiconductor sublayer. The first electron blocking sublayer, the low-temperature semiconductor sublayer, the second electron blocking sublayer and the high-temperature semiconductor sublayer are sequentially stacked on the light-emitting layer.

[0075] The first electron blocking sublayer is an AlN / GaN / AlGaN stack, the low-temperature semiconductor sublayer is a GaN / AlGaN / InGaN stack, and the second electron blocking sublayer is an AlGaN layer.

[0076] In the light-emitting diode provided in this embodiment, an AlN / GaN / AlGaN stack is arranged behind the light-emitting layer. The AlN / GaN / AlGaN stack includes a high-energy AlN layer, forming a first-wave electron blocking barrier that filters and blocks a portion of electrons. Next, a GaN / AlGaN / InGaN stack is formed as the low-temperature semiconductor sublayer. This serves two purposes: to provide as many holes as possible and to prevent the second wave of electrons from leaking into the high-temperature semiconductor sublayer. Then, a second electron blocking sublayer is formed. Due to the presence of the first electron blocking sublayer, the Al content in the second electron blocking sublayer is significantly reduced compared to a single electron blocking layer. Therefore, although the second electron blocking sublayer is close to the high-temperature semiconductor sublayer, the electron blocking effect is not affected by the significant reduction in Al content, as two electron blocking processes have already occurred. Simultaneously, due to the lower barrier, holes can move in large quantities towards the electron well, forming a continuous hole flow. Because electrons are triple-blocked, non-radiative recombination is greatly reduced. The formation of a stable hole flow significantly enhances radiative recombination, ultimately improving the luminous efficiency of the light-emitting diode.

[0077] In this embodiment, the buffer layer, filler layer, first semiconductor layer, light-emitting layer, and second semiconductor layer are grown within the reaction chamber. The reaction chamber is the reaction chamber of an MOCVD (Metal Organic Chemical Vapor Deposition) apparatus.

[0078] During the growth of each film layer, the growth substrate is placed inside a graphite disk within the MOCVD reaction chamber. By introducing an MO source and reactive gas into the reaction chamber and controlling the rotation of the graphite disk, each film layer is formed on the substrate within the graphite disk.

[0079] Figure 4 This is a flowchart illustrating a method for fabricating a light-emitting diode according to an embodiment of this disclosure. Figure 4 As shown, the preparation method includes:

[0080] Step 401: Grow a buffer layer on the substrate.

[0081] In the embodiment of the present disclosure, the substrate 100 may be a sapphire substrate.

[0082] In the embodiment of the present disclosure, the buffer layer 101 may include a stacked two-dimensional buffer layer and a three-dimensional nucleation layer.

[0083] Step 402: Fabricate a planarizing layer on the buffer layer.

[0084] In the embodiment of the present disclosure, both the buffer layer 101 and the planarizing layer 102 are GaN layers.

[0085] Step 403: Sequentially grow a first semiconductor layer and a light-emitting layer on the planarizing layer.

[0086] In the embodiment of the present disclosure, the first semiconductor layer 103 is a Si-doped layer.

[0087] Exemplarily, the first semiconductor layer 103 is a Si-doped GaN layer.

[0088] In the embodiment of the present disclosure, the light-emitting layer 104 may be a multi-quantum well barrier layer.

[0089] Exemplarily, the light-emitting layer 104 is a superlattice composed of 8 to 15 periods of In x Ga 1-x N(0.2 < x < 0.5) quantum wells / GaN (or AlGaN) quantum barriers.

[0090] Step 404: Sequentially grow a first electron blocking layer, a low-temperature semiconductor layer, a second electron blocking layer, and a high-temperature semiconductor layer on the light-emitting layer.

[0091] In the embodiment of the present disclosure, the high-temperature semiconductor layer 162 is a Mg-doped layer.

[0092] Exemplarily, the high-temperature semiconductor layer 162 is a Mg-doped GaN layer.

[0093] In the embodiment of the present disclosure, the thicknesses of the AlN, GaN, and AlGaN layers in the first electron blocking layer 151 are 2 to 4 nm, 1 to 3 nm, and 2 to 3 nm, respectively.

[0094] Exemplarily, the thicknesses of the AlN, GaN, and AlGaN layers in the first electron blocking layer 151 are 3 nm, 2 nm, and 2.5 nm, respectively.

[0095] In the embodiment of the present disclosure, the Al components in the AlN and AlGaN layers in the first electron blocking layer 151 are 10 to 15% and 5 to 10%, respectively.

[0096] For example, the Al composition in the AlN and AlGaN layers of the first electron blocking sublayer 151 is 12.5% ​​and 7.5%, respectively.

[0097] In the first electron blocking sublayer 151, the Al composition shows a trend of high at the beginning and low at the end, which can more effectively block electrons and facilitate the forward injection of holes.

[0098] In this embodiment of the disclosure, the growth temperature of the AlN / GaN / AlGaN stack in the first electron blocking sublayer is 800–900°C.

[0099] For example, the growth temperature of the AlN / GaN / AlGaN stack in the first electron blocking sublayer is 850°C.

[0100] In this embodiment of the disclosure, the thicknesses of the GaN, AlGaN, and InGaN layers in the low-temperature semiconductor sublayer 161 are 5–10 nm, 10–20 nm, and 15–30 nm, respectively.

[0101] For example, the thicknesses of the GaN, AlGaN, and InGaN layers in the low-temperature semiconductor sublayer 161 are 7.5 nm, 15 nm, and 22.5 nm, respectively.

[0102] In the low-temperature semiconductor sublayer 161, the thickness of each sublayer shows a trend of being thinner at the front and thicker at the back. The AlGaN and InGaN are thicker because Al / In doping is an impurity, which is not conducive to crystal growth. Thicker layers are more conducive to the entry of Al / In doping, thereby achieving the purpose of growing the low-temperature semiconductor sublayer.

[0103] In this embodiment of the disclosure, the Al composition in the AlGaN layer of the low-temperature semiconductor sublayer 161 is 5-10%.

[0104] For example, the Al content in the AlGaN layer of the low-temperature semiconductor sublayer 161 is 7.5%.

[0105] In this embodiment of the disclosure, the growth temperatures of the GaN, AlGaN, and InGaN layers in the low-temperature semiconductor sublayer are 700–750°C, 750–800°C, and 800–850°C, respectively.

[0106] For example, the growth temperatures of GaN, AlGaN, and InGaN layers in the low-temperature semiconductor sublayer are 725°C, 775°C, and 825°C, respectively.

[0107] In this implementation, the low-temperature semiconductor sublayer adopts a lower overall temperature and exhibits a gradually increasing temperature trend. On the one hand, this can create a certain roughening effect, which is beneficial for light emission, and on the other hand, it is beneficial for the incorporation of In.

[0108] In an embodiment of the present disclosure, the second electron blocking layer 152 is an Al y Ga 1-y N layer, where 0.05 < y < 0.3.

[0109] In this implementation, the value of the Al component is 0.05 < y < 0.3, which is much smaller than the value (0.2 < y < 0.5) in the related art for a single electron blocking layer, and the Al component is significantly reduced.

[0110] Exemplarily, the value of y is 0.05 or 0.06.

[0111] In an embodiment of the present disclosure, the thickness of the second electron blocking layer 152 is 5 - 10 nm.

[0112] Exemplarily, the thickness of the second electron blocking layer 152 is 8 nm.

[0113] In an embodiment of the present disclosure, the growth temperature of the second electron blocking layer 152 is 800 - 900 °C, and the growth pressure is 五十 - 250 torr.

[0114] Exemplarily, the growth temperature of the second electron blocking layer 152 is 850 °C, and the growth pressure is 150 torr.

[0115] In an embodiment of the present disclosure, the thickness of the high - temperature semiconductor layer 162 is 3 - 5 nm.

[0116] Exemplarily, the thickness of the high - temperature semiconductor layer 162 is 4 nm.

[0117] In an embodiment of the present disclosure, the growth temperature of the high - temperature semiconductor layer 162 is 850 - 1000 °C, and the growth pressure is 五十 - 250 torr.

[0118] Exemplarily, the growth temperature of the high - temperature semiconductor layer 162 is 950 °C, and the growth pressure is 150 torr.

[0119] It should be noted that in the translation of "五十", it should be the correct value in English for the pressure unit (e.g., 50). Here it seems there is a formatting issue in the original Chinese text where the number is not in a standard form. If it is indeed "50", the translation should be adjusted accordingly.In the light-emitting diode provided in this embodiment, an AlN / GaN / AlGaN stack is arranged behind the light-emitting layer. The AlN / GaN / AlGaN stack includes a high-energy AlN layer, forming a first-wave electron blocking barrier that filters and blocks a portion of electrons. Next, a GaN / AlGaN / InGaN stack is formed as the low-temperature semiconductor sublayer. This serves two purposes: to provide as many holes as possible and to prevent the second wave of electrons from leaking into the high-temperature semiconductor sublayer. Then, a second electron blocking sublayer is formed. Due to the presence of the first electron blocking sublayer, the Al content in the second electron blocking sublayer is significantly reduced compared to a single electron blocking layer. Therefore, although the second electron blocking sublayer is close to the high-temperature semiconductor sublayer, the electron blocking effect is not affected by the significant reduction in Al content, as two electron blocking processes have already occurred. Simultaneously, due to the lower barrier, holes can move in large quantities towards the electron well, forming a continuous hole flow. Because electrons are triple-blocked, non-radiative recombination is greatly reduced. The formation of a stable hole flow significantly enhances radiative recombination, ultimately improving the luminous efficiency of the light-emitting diode.

[0120] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.

Claims

1. A light-emitting diode, characterized in that, The light-emitting diode includes: A buffer layer (101), a filler layer (102), a first semiconductor layer (103), a light-emitting layer (104), an electron blocking layer (105), and a second semiconductor layer (106) are stacked in sequence. The electron blocking layer (105) includes a first electron blocking sublayer (151) and a second electron blocking sublayer (152), and the second semiconductor layer (106) includes a low-temperature semiconductor sublayer (161) and a high-temperature semiconductor sublayer (162). The first electron blocking sublayer (151), the low-temperature semiconductor sublayer (161), the second electron blocking sublayer (152) and the high-temperature semiconductor sublayer (162) are sequentially stacked on the light-emitting layer (104). The first electron blocking sublayer (151) is an AlN / GaN / AlGaN stack, the low-temperature semiconductor sublayer (161) is a GaN / AlGaN / InGaN stack, and the second electron blocking sublayer (152) is an AlGaN layer.

2. The light-emitting diode according to claim 1, characterized in that, The thicknesses of the AlN, GaN, and AlGaN layers in the first electron blocking sublayer (151) are 2–4 nm, 1–3 nm, and 2–3 nm, respectively.

3. The light-emitting diode according to claim 2, characterized in that, The Al composition in the AlN and AlGaN layers of the first electron blocking sublayer (151) is 10-15% and 5-10%, respectively.

4. The light-emitting diode according to any one of claims 1 to 3, characterized in that, The thicknesses of the GaN, AlGaN, and InGaN layers in the low-temperature semiconductor sublayer (161) are 5–10 nm, 10–20 nm, and 15–30 nm, respectively.

5. The light-emitting diode according to claim 4, characterized in that, The Al composition in the AlGaN layer of the low-temperature semiconductor sublayer (161) is 5-10%.

6. The light-emitting diode according to any one of claims 1 to 3, characterized in that, The second electron-blocking sublayer (152) is Al y Ga 1-y N layers, 0.05 <y<0.3。 7. The light-emitting diode according to claim 6, characterized in that, The thickness of the second electron blocking sublayer (152) is 5-10 nm.

8. A method for fabricating a light-emitting diode, characterized in that, The preparation method includes: Create a buffer layer; A filler layer is made on the buffer layer; A first semiconductor layer, a light-emitting layer, an electron-blocking layer, and a second semiconductor layer are sequentially fabricated on the filler layer. The electron blocking layer includes a first electron blocking sublayer and a second electron blocking sublayer, and the second semiconductor layer includes a low-temperature semiconductor sublayer and a high-temperature semiconductor sublayer. The first electron blocking sublayer, the low-temperature semiconductor sublayer, the second electron blocking sublayer and the high-temperature semiconductor sublayer are sequentially stacked on the light-emitting layer. The first electron blocking sublayer is an AlN / GaN / AlGaN stack, the low-temperature semiconductor sublayer is a GaN / AlGaN / InGaN stack, and the second electron blocking sublayer is an AlGaN layer.

9. The method according to claim 8, characterized in that, The growth temperature of the AlN / GaN / AlGaN stack in the first electron blocking sublayer is 800–900 °C.

10. The method according to claim 8, characterized in that, The growth temperatures of the GaN, AlGaN, and InGaN layers in the low-temperature semiconductor sublayer are 700–750℃, 750–800℃, and 800–850℃, respectively.

Images