Electronic device

Abstract

The invention provides an electronic device which comprises a substrate, a circuit layer which is arranged on the substrate and comprises a switch element, a light shielding layer which is arranged between the substrate and the circuit layer, and a diode which is arranged between the substrate and the circuit layer. The switch element is arranged on the substrate and electrically connected with the switch element, and the sensing switch element is electrically connected with the optical sensing unit. In a thickness direction of the substrate, the shading layer is overlapped on the optical sensing unit.

Description

[0001] This application is a divisional application of the invention patent application with the application date of July 18, 2019, the application number of 201910649674.7, and the invention title of "Electronic Device". Technical Field

[0002] The present invention relates to an electronic device, and more particularly to an electronic device including an optical sensor. Background Art

[0003] In an electronic device, an optical sensor can be used to detect light and generate signals to perform the functions of the electronic device. However, as the requirements of users for electronic devices are getting higher and higher, improving the design of optical sensors has become an important issue in the electronics industry. Summary of the Invention

[0004] In some embodiments, the present invention provides an electronic device. The electronic device includes a substrate, a circuit layer disposed on the substrate and including a switching element, a light-shielding layer disposed between the substrate and the circuit layer, a diode disposed on the substrate and electrically connected to the switching element, an optical sensing unit, and a sensing switching element electrically connected to the optical sensing unit. In a thickness direction of the substrate, the light-shielding layer overlaps the optical sensing unit. Brief Description of the Drawings

[0005] Figure 1 A cross-sectional schematic view of the electronic device according to the first embodiment of the present invention.

[0006] Figure 2 A partially enlarged cross-sectional schematic view of the optical sensor according to a variant embodiment of the first embodiment of the present invention.

[0007] Figure 3 A cross-sectional schematic view of the electronic device according to the second embodiment of the present invention.

[0008] Figure 4 A cross-sectional schematic view of the electronic device according to the third embodiment of the present invention.

[0009] Figure 5 A top view schematic diagram of the light-emitting diode and the optical sensor according to a variant embodiment of the third embodiment of the present invention.

[0010] Figure 6 A functional block diagram of an exemplary operation method of the optical sensor according to the first embodiment of the present invention.

[0011] Figure 7 A functional block diagram of another exemplary operation method of the optical sensor according to the first embodiment of the present invention.

[0012] Figure 8Schematic flow diagram of the operation method of the electronic device according to the third embodiment of the present invention.

[0013] Figure 9 Schematic diagram of the electronic device according to an embodiment of the present invention.

[0014] Description of reference numerals: 100, 200, 400 - electronic device; 102, 402 - substrate; 104, 404 - circuit layer; 106, 206, 406, OS - optical sensor; 108, 208 - light emitting diode; 108a, AE, A1, A2, 208a, 410a - first electrode; 108b, 208b, 410b, 408b, 412b - light emitting layer; 108c, BE, B1, B2, 208c, 408c, 410c, 412c - second electrode; 110 - switching element; 110C, 112C, SC2 - semiconductor layer; 110D, 112D, DE2 - drain; 110G, 112G, GE2 - gate; 110S, 112S, SE2 - source; 112 - driving element; 114 - pixel definition layer; 114a, 208d, 410d - opening; 120 - protective layer; 120a - first protective layer; 120b - second protective layer; 120c - third protective layer; 130 - processor; 132 - fingerprint identification unit; 134 - brightness correction unit; 136 - ambient light identification unit; 138 - electrical signal distributor; 408 - first light emitting diode; 410 - second light emitting diode; 412 - third light emitting diode; 900 - display device; BF - buffer layer; BP1, BP2 - insulating layer; C1 - first semiconductor layer; C2 - second semiconductor layer; C3 - third semiconductor layer; CG - cover glass layer; D1 - thickness direction; DT - sensing switch element; ES - electronic signal; ES1 - first electronic signal; ES2 - second electronic signal; ES3 - third electronic signal; FG - object; FL - functional layer; GI - first gate insulating layer; GI2 - second gate insulating layer; I1, I2 - intrinsic semiconductor layer; ILD - interlayer dielectric layer; IR - display area; L1, L2 - light rays; L1’ - first light ray; L2’ - second light ray; LS - light shielding layer; N1, N2 - N-type semiconductor layer; P1, P2 - P-type semiconductor layer; PLN - flat layer; PLNS - flat surface; PR - peripheral area; R1 - first area; R2 - second area; Rf - fingerprint detection area; Rnf - non-fingerprint detection area; S100, S102, S104, S106, S108, S110 - steps; SCM - brightness detection mode; SFM - fingerprint detection mode. Detailed implementation manners

[0015] The present invention can be understood by referring to the following detailed description and in conjunction with the accompanying drawings. It should be noted that, for the convenience of the reader's understanding and for the simplicity of the drawings, only a part of the electronic device is shown in the multiple drawings of the present invention, and the specific elements in the drawings are not drawn to actual scale. In addition, the number and size of each element in the drawings are only for illustration and are not used to limit the scope of the present invention.

[0016] Throughout the specification and the appended claims of the present invention, certain terms are used to refer to specific elements. Those skilled in the art should understand that electronic device manufacturers may use different names to refer to the same element. This document does not intend to distinguish between elements that have the same function but different names.

[0017] In the following specification and claims, words such as "comprising" and "including" are open-ended terms and should therefore be interpreted as meaning "including but not limited to...".

[0018] It should be understood that when an element or film layer is said to be "on" or "connected to" another element or film layer, it can be directly on or directly connected to this other element or layer, or there may be intervening elements or film layers between the two (non-direct case). Conversely, when an element is said to be "directly" "on" or "directly connected to" another element or film layer, there are no intervening elements or film layers between the two.

[0019] Although terms such as first, second, third... may be used to describe various components, the components are not limited to these terms. These terms are only used to distinguish a single component in the specification from other components. The same terms may not be used in the claims, and first, second, third... may be used in place of them according to the order of element declarations in the claims. Therefore, in the following specification, the first component may be the second component in the claims.

[0020] It should be noted that, without departing from the spirit of the present invention, the technical features in several different embodiments can be replaced, recombined, and mixed to complete other embodiments in the following examples.

[0021] Please refer to Figure 1 , Figure 1 is a cross-sectional schematic view of an electronic device according to a first embodiment of the present invention. The electronic device 100 may include a display device, an antenna device, a sensing device, or a splicing device, but is not limited thereto. The electronic device may be a bendable or flexible electronic device. The electronic device 100 may be applied, for example, as a public display, a splicing display, a vehicle display, a display panel, a touch panel, a light source module, a television, a smart phone, a tablet computer, a laptop computer, a lighting device, or an electronic device applied to the above products, but is not limited to the above examples. As Figure 1As shown, the electronic device 100 may include a substrate 102, a circuit layer 104, an optical sensor 106, and a light-emitting diode 108. The substrate 102 may be a rigid substrate (such as a glass substrate, a quartz substrate, a ceramic substrate, or a sapphire substrate, but not limited thereto), a flexible substrate (such as a plastic substrate such as a polyimide (PI) substrate, a polycarbonate (PC) substrate, or a polyethylene terephthalate (PET) substrate), other suitable substrates, or a combination thereof, but not limited thereto.

[0022] The light-emitting diode 108 is disposed on the substrate 102 and may include, for example, a first electrode 108a, a second electrode 108c, and a light-emitting layer 108b, wherein the light-emitting layer 108b is located between the first electrode 108a and the second electrode 108c. The first electrode 108a and the second electrode 108c may serve as the cathode and anode of the light-emitting diode 108 respectively, but are not limited thereto. In a variant embodiment, the first electrode 108a and the second electrode 108c may also serve as the anode and cathode of the light-emitting diode 108 respectively. In the present embodiment, the second electrode 108c is closer to the substrate 102 than the first electrode 108a. The second electrode 108c is located on the lower side of the light-emitting layer 108b and may be referred to as the lower electrode, while the first electrode 108a is located on the upper side of the light-emitting layer 108b and may be referred to as the upper electrode. The first electrode 108a and the second electrode 108c may include a metal oxide or a metal material, for example, indium tin oxide, but are not limited thereto. The light-emitting diode 108 may include, for example, an organic light-emitting diode (OLED), a quantum dot diode (QLED or QDLED), an inorganic light-emitting diode (LED), any other suitable light-emitting element, or a combination of the above. The inorganic light-emitting diode may be a mini LED or a micro LED, but is not limited thereto. In one embodiment, the electronic device 100 may further include liquid crystal (LC), quantum dot (QD), fluorescence material, phosphor material, other suitable materials, or a combination of the above, but not limited thereto. For example, Figure 1The light-emitting diode 108 can be an organic light-emitting diode, but the present invention is not limited thereto. Additionally, the light-emitting diode 108 of the present invention can include, for example, a blue light-emitting diode, a red light-emitting diode, a green light-emitting diode, or a white light-emitting diode, but is not limited thereto. For example, the light-emitting diode 108 can be a blue light-emitting diode. Although Figure 1 only one light-emitting diode 108 is shown, the present invention is not limited thereto. For example, two or more light-emitting diodes can be included in the electronic device 100.

[0023] A pixel defining layer (PDL) 114 can be included on the substrate 102, which can include at least one opening 114a. The light-emitting diode 108 can be mainly located in the opening 114a, or the light-emitting layer 108b of the light-emitting diode 108 can be located in the opening 114a. In one embodiment, the opening 114a of the pixel defining layer 114 can define the light-emitting region or light-emitting area of the light-emitting diode 108. According to the present invention, the light-emitting diode 108 can emit light rays L1 and L2. The light ray L1 can be emitted in a direction opposite to the substrate 102. On the other hand, the light ray L2 can be regarded as being emitted in the direction of the substrate 102.

[0024] The circuit layer 104 is disposed on the substrate 102 and can include various wires, circuits, and / or electronic components. For example, it can include a switching element 110 and a driving element 112. The switching element 110 and the driving element 112 can include, for example, thin-film transistors (TFTs), but the present invention is not limited thereto. The switching element 110 can have a gate 110G, a source 110S, a drain 110D, a semiconductor layer 110C, and a first gate insulating layer GI, and the first gate insulating layer GI is located between the gate 110G and the semiconductor layer 110C. The gate 110G of the switching element 110 can be electrically connected to a scan line ( Figure 1 not shown), and the source 110S can be electrically connected to a data line DL. The driving element 112 can have a gate 112G, a source 112S, a drain 112D, a semiconductor layer 112C, and a first gate insulating layer GI, and the first gate insulating layer GI is located between the gate 112G and the semiconductor layer 112C. In one embodiment, the gate 112G of the driving element 112 can be electrically connected to the drain 110D of the switching element 110, the drain 112D of the driving element 112 can be electrically connected to the second electrode 108c of the light-emitting diode 108, and the source 112S of the driving element 112 can be electrically connected to a working voltage source (VDD) or a shared voltage source, but is not limited thereto. Additionally, although Figure 1The illustrated switching element 110 and driving element 112 are top gate thin film transistors, but the present invention is not limited thereto. The switching element 110 and driving element 112 may also include bottom gate thin film transistors or multi-gate thin film transistors (such as dual gate / double gate transistors), and the switching element 110 and driving element 112 of the present invention may be thin film transistors of the same or different types. In one embodiment, the materials of the semiconductor layer 110C of the switching element 110 and the semiconductor layer 112C of the driving element 112 may respectively include amorphous semiconductors, poly-crystalline semiconductors, metal oxides (such as indium gallium zinc oxide (IGZO)), or combinations thereof, but are not limited thereto. The materials of the semiconductor layer 110C and the semiconductor layer 112C may be the same or different. For example, the material of one of the semiconductor layer 110C and the semiconductor layer 112C may include polysilicon, and the material of the other may include indium gallium zinc oxide (IGZO).

[0025] In this embodiment, the optical sensor 106 may be located between the light emitting diode 108 and the substrate 102, but is not limited thereto. Although Figure 1 the illustrated optical sensor 106 is located between the substrate 102 and the light emitting diode 108, the optical sensor 106 may be disposed at other positions. For example, the optical sensor 106 may be disposed below the substrate 102 (i.e., the substrate 102 is located between the optical sensor 106 and the light emitting diode 108) or above the light emitting diode 108 (i.e., the light emitting diode 108 is located between the optical sensor 106 and the substrate 102). The optical sensor 106 may be various types of optical sensors. In this embodiment, a PIN diode is taken as an example, but is not limited thereto. As Figure 1 shown, the optical sensor 106 may include a first electrode AE, a first semiconductor layer C1, a second semiconductor layer C2, a third semiconductor layer C3, and a second electrode BE. The first electrode AE and the second electrode BE may, for example, include metal materials, metal oxides, or other suitable conductive materials, but are not limited thereto. The first semiconductor layer C1 may include one of an N-type semiconductor layer or a P-type semiconductor layer, the third semiconductor layer C3 may include the other of an N-type semiconductor layer or a P-type semiconductor layer, and the second semiconductor layer C2 may include an intrinsic semiconductor layer. For example, the first semiconductor layer C1 may be an N-type semiconductor layer, the second semiconductor layer C2 may be an intrinsic semiconductor layer, and the third semiconductor layer C3 may be a P-type semiconductor layer, but the present invention is not limited thereto.

[0026] The sensing switch element DT can be electrically connected to the optical sensor 106. The sensing switch element DT can be disposed adjacent to the optical sensor 106, for example, disposed below the optical sensor 106, and can be used, for example, to control the transmission of sensing signals. In this embodiment, the sensing switch element DT can be, for example, a thin film transistor and can have a gate GE2, a source SE2, a drain DE2, a semiconductor layer SC2, and a second gate insulating layer GI2. The second gate insulating layer GI2 is located between the gate GE2 and the semiconductor layer SC2, but is not limited thereto. In this embodiment, the source SE2 of the sensing switch element DT can be electrically connected to the second electrode BE of the optical sensor 106, but is not limited thereto.

[0027] According to this embodiment, the optical sensor 106 can partially overlap with the light emitting diode 108 in the thickness direction D1 of the substrate 102. Herein, "partially overlap" can mean that all or part of the area of the light emitting diode 108 overlaps with the optical sensor 106 in the thickness direction D1. Figure 1 For example, the optical sensor 106 includes a first region R1 and a second region R2. The first region R1 does not overlap with the light emitting diode 108, and the second region R2 overlaps with the light emitting diode 108. It should be noted that herein, "overlap with the light emitting diode" can mean that the optical sensor 106 and the second electrode 108c of the light emitting diode 108 have at least a partially overlapping area, but the present invention is not limited thereto. In this embodiment, the area of the first region R1 of the optical sensor 106 can be larger than the area of the second region R2 of the optical sensor. In some embodiments, the ratio range of the area of the second region R2 to the area of the light emitting diode 108 can be from 0.1 to 1 (0.1 ≦ ratio ≦ 1). It should be noted that herein, the "area of the light emitting diode" can be the area of the light emitting layer 108b in the top view direction, but the present invention is not limited thereto. For example, the area of the light emitting diode 108 can also be defined by the area of the lower surface of the opening 114a of the pixel defining layer 114.

[0028] The first region R1 of the optical sensor 106 can receive, for example, the light ray L1 emitted by the light-emitting diode 108. For example, when an object FG (such as a finger) touches the electronic device 100, the light ray L1 can be reflected by the object FG, so that the first region R1 receives the light ray L1 and can generate a first electronic signal thereby. The first electronic signal can be used, for example, for fingerprint identification, but is not limited thereto. The optical sensor 106 can also be used, for example, to detect ambient light to generate a first electronic signal to obtain information about the ambient light source. The second region R2 of the optical sensor 106 can receive, for example, the light ray L2 emitted by the light-emitting diode 108 and can generate a second electronic signal. The second electronic signal can be used, for example, to correct the brightness of the light-emitting diode 108, but is not limited thereto. In one embodiment, the first electronic signal and the second electronic signal can be respectively used for fingerprint identification, obtaining information about the ambient light source, correcting the brightness of the light-emitting diode 108, and / or other appropriate functions, but are not limited thereto.

[0029] In one embodiment, the light-shielding layer LS can be disposed on the substrate 102 and can be located between the circuit layer 104 and the substrate in the thickness direction D1, for example, between the switching element 110 and the substrate 102 and / or between the driving element 112 and the substrate 102, but is not limited thereto. The light-shielding layer LS can be used, for example, to block the light entering from the substrate 102 to reduce the influence of ambient light on the switching element 110 and the driving element 112, but is not limited thereto.

[0030] In one embodiment, a planarization layer PLN may be disposed on the optical sensor 106 and may provide a planar surface PLNS for disposing the subsequently formed second electrode 108c and the light-emitting layer 108b, but not limited thereto. The functional layer FL and the protective layer CG may be selectively included in the electronic device 100 of the present invention. The functional layer FL may be used to provide the optical function or touch function required by the electronic device 100. The protective layer CG may be used, for example, to protect the functional layer FL and other film layers and / or components under the functional layer FL, but not limited thereto. The electronic device 100 may further include an insulating layer 120 disposed on the pixel definition layer 114 and the light-emitting diode 108. In some embodiments, the insulating layer 120 may be a single-layer structure or a multi-layer structure. For example, the insulating layer 120 may include a first insulating layer 120a, a second insulating layer 120b, and a third insulating layer 120c. For example, the first insulating layer 120a and the third insulating layer 120c may include inorganic insulating materials, while the second insulating layer 120b may include organic insulating materials, but not limited thereto. In one embodiment, the insulating layer 120 may also provide a planarization effect. In addition to the above-described elements or film layers, the electronic device 100 of this embodiment may further include, for example, a buffer layer BF disposed on the light-shielding layer LS, an interlayer dielectric layer ILD disposed on the first gate insulating layer GI, an insulating layer BP1 disposed on the interlayer dielectric layer ILD, and an insulating layer BP2 disposed on the second gate insulating layer GI2, but not limited thereto.

[0031] Please refer to Figure 2 , Figure 2A cross-sectional schematic view of an optical sensor according to a variant embodiment of the first embodiment of the present invention. In this variant embodiment, the materials included in the first region R1 and the second region R2 of the optical sensor 106 can have different combinations as needed. The optical sensor 106 can include a first electrode A1, a first-type semiconductor layer N1, an intrinsic semiconductor layer I1, a second-type semiconductor layer P1, and a second electrode B1 located in the first region R1, and a first electrode A2, a first-type semiconductor layer N2, an intrinsic semiconductor layer I2, a second-type semiconductor layer P2, and a second electrode B2 located in the second region R2. In one embodiment, the first-type semiconductor layer N1 and the first-type semiconductor layer N2 can be one of an N-type semiconductor layer and a P-type semiconductor layer, and the second-type semiconductor layer P1 and the second-type semiconductor layer P2 can be the other of an N-type semiconductor layer and a P-type semiconductor layer. According to a variant embodiment, the first electrodes A1 and A2 can have the same material, for example, including a conductive material, and the second electrodes B1 and B2 can have the same material, for example, including a conductive material. That is to say, the semiconductor layers (including the first-type semiconductor layer, the intrinsic semiconductor layer, and the second-type semiconductor layer) in the first region R1 and the second region R2 can share the first electrode and the second electrode. Additionally, in one embodiment, the materials of the first-type semiconductor layer N1, the intrinsic semiconductor layer I1, and the second-type semiconductor layer P1 in the first region R1 can be the same as the materials of the first-type semiconductor layer N2, the intrinsic semiconductor layer I2, and the second-type semiconductor layer P2 in the second region R2 respectively, but the doping amounts of the semiconductor layers in the two regions can be different. For example, the semiconductor layers (including the first-type semiconductor layer, the intrinsic semiconductor layer, and the second-type semiconductor layer) in the first region R1 and the second region R2 can include silicon, and the first-type semiconductor layer N2, the second-type semiconductor layer P2, and / or the intrinsic semiconductor layer I2 in the second region R2 can have a larger doping amount than the first-type semiconductor layer N1, the second-type semiconductor layer P1, and / or the intrinsic semiconductor layer I1 in the first region R1, but the present invention is not limited thereto. According to another variant embodiment, the materials of the first-type semiconductor layer N1, the intrinsic semiconductor layer I1, and the second-type semiconductor layer P1 in the first region R1 can be different from the materials of the first-type semiconductor layer N2, the intrinsic semiconductor layer I2, and the second-type semiconductor layer P2 in the second region R2 respectively. For example, the materials of the first-type semiconductor layer N1, the intrinsic semiconductor layer I1, and the second-type semiconductor layer P1 in the first region R1 can include silicon, and the materials of the first-type semiconductor layer N2, the intrinsic semiconductor layer I2, and the second-type semiconductor layer P2 in the second region R2 can include germanium, but not limited thereto. In another embodiment, the material of the second-type semiconductor layer P1 in the first region R1 can be the same as the material of the second-type semiconductor layer P2 in the second region R2, for example, including silicon. In addition, the materials of the first-type semiconductor layer N1 and the intrinsic semiconductor layer I1 in the first region R1 can be different from the materials of the first-type semiconductor layer N2 and the intrinsic semiconductor layer I2 in the second region R2 respectively.For example, the second-type semiconductor layer P1 in the first region R1 and the second-type semiconductor layer P2 in the second region R2 may include silicon, for example. The first-type semiconductor layer N1 and the intrinsic semiconductor layer I1 in the first region R1 may include silicon, for example, while the first-type semiconductor layer N2 and the intrinsic semiconductor layer I2 in the second region R2 may include germanium, but are not limited to the above materials. According to yet another embodiment, in the optical sensor 106, the material of the first electrode A1 in the first region R1 may be different from that of the first electrode A2 in the second region R2, and the material of the second electrode B1 in the first region R1 may be different from that of the second electrode B2 in the second region R2. In addition, the materials of the first-type semiconductor layer N1, the intrinsic semiconductor layer I1, and the second-type semiconductor layer P1 in the first region R1 may be different from the materials of the first-type semiconductor layer N2, the intrinsic semiconductor layer I2, and the second-type semiconductor layer P2 in the second region R2, respectively. For example, the materials of the first-type semiconductor layer N1, the intrinsic semiconductor layer I1, and the second-type semiconductor layer P1 in the first region R1 may include silicon, for example, and the materials of the first-type semiconductor layer N2, the intrinsic semiconductor layer I2, and the second-type semiconductor layer P2 in the second region R2 may include germanium, but are not limited thereto. The same or different materials of the first electrode, the second electrode, the first-type semiconductor layer, the intrinsic semiconductor layer, and the second-type semiconductor layer in the first region R1 and the second region R2 can be designed to vary according to actual needs.

[0032] Please refer to Figure 3 , Figure 3 which is a cross-sectional schematic diagram of the electronic device according to the second embodiment of the present invention. For the sake of simplicity of the drawings, Figure 3 function layers and protective layers that can be selectively provided are omitted in the figure. The main difference between the electronic device 200 of the present embodiment and the Figure 1 electronic device shown in the first embodiment is that the second electrode 208c of the light-emitting diode 208 of the electronic device 200 of the present embodiment may have an opening 208d. As Figure 3 shown, the light-emitting diode 208 may include a first electrode 208a, a light-emitting layer 208b, and a second electrode 208c, where the second electrode 208c may have an opening 208d, and the light-emitting layer 208b may be filled in the opening 208d. The first electrode 208a and the second electrode 208c of the light-emitting diode 208 may include metal oxides or metal materials, for example. For example, the first electrode 208a may include a metal oxide material (such as Indium Tin Oxide (ITO)), and the second electrode 208c may include a metal conductive material, but is not limited thereto. Similarly, although Figure 3Only one light-emitting diode 208 is shown, but the present invention is not limited thereto. The electronic device 200 may include, for example, two or more light-emitting diodes. Similar to the first embodiment, the optical sensor 206 of this embodiment has a first region R1 that does not overlap with the light-emitting diode 208 and a second region R2 that overlaps with the light-emitting diode 208. The first region R1 of the optical sensor 206 may receive, for example, the light ray L1 and may generate, for example, a first electronic signal for fingerprint identification. The light ray L1 may be emitted by the light-emitting diode 208 and reflected by the object FG to the optical sensor 206. The second region R2 of the optical sensor 206 may receive, for example, the light ray L2 emitted by the light-emitting diode 208 and may generate, for example, a second electronic signal for correcting the brightness of the light-emitting diode 208, but the present invention is not limited to the above. According to this embodiment, the light ray L2 may be emitted by the light-emitting layer 208b and reach the second region R2 of the optical sensor 206 through the opening 208d, but not limited thereto. Other elements or film layers of the electronic device 200 of this embodiment are the same as or similar to those of the first embodiment, so they will not be described in detail herein.

[0033] Please refer to Figure 4 , Figure 4 FIG. is a cross-sectional schematic diagram of an electronic device according to a third embodiment of the present invention. The electronic device 400 may include a substrate 402, a circuit layer 404, an optical sensor 406, a first light-emitting diode 408, and a second light-emitting diode 410. The main difference between the electronic device of this embodiment and that of the second embodiment is that the electronic device 400 of this embodiment has a first light-emitting diode 408 and a second light-emitting diode 410, and the optical sensor 406 may partially overlap with the second light-emitting diode 410. The second light-emitting diode 410 may include a first electrode 410a, a light-emitting layer 410b, and a second electrode 410c. The material of the substrate 402, the structure of the circuit layer 404, the material and installation position of the optical sensor 406, and the materials of the first light-emitting diode 408 and the second light-emitting diode 410 may refer to the first embodiment, so they will not be described in detail herein. It should be noted that although Figure 4 only two light-emitting diodes are shown, the present invention is not limited thereto, and the electronic device 400 may include more light-emitting diode elements. In this embodiment, as Figure 4As shown, the first light-emitting diode 408 may not overlap with the optical sensor 406, and the second light-emitting diode 410 may partially overlap with the optical sensor 406, but this is not limiting. Similarly, the "partial overlap" here may mean that all or part of the second light-emitting diode 410 overlaps with the optical sensor 406 in the thickness direction D1. The optical sensor 406 may have a first region R1 and a second region R2, where the first region R1 does not overlap with the second light-emitting diode 410, and the second region R2 overlaps with the second light-emitting diode 410. It should be noted that in this embodiment, the second region R2 may include a region where the optical sensor 206 at least partially overlaps with the second electrode 208c of the light-emitting diode 208, and a region where the optical sensor 206 at least partially overlaps with the opening 208d, but the present invention is not limited thereto. According to this embodiment, the first light-emitting diode 408 may emit a first light ray L1', and the first region R1 of the optical sensor 406 may, for example, receive the first light ray L1' emitted by the first light-emitting diode 408, but this is not limiting. For example, when an object FG contacts the electronic device 400, the first light ray L1' may be reflected by the object FG, so that the first region R1 receives the first light ray L1' and may generate a first electrical signal thereby. The first electrical signal may be used for fingerprint identification, for example, but this is not limiting. The optical sensor 406 may also detect an ambient light source and generate a first electrical signal for obtaining information (such as illuminance) of the ambient light source, for example. The second light-emitting diode 410 may emit a second light ray L2', and the second region R2 of the optical sensor 406 may, for example, receive the second light ray L2' emitted by the second light-emitting diode 410, but this is not limiting. For example, the second region R2 of the optical sensor 406 may receive the second light ray L2' emitted by the second light-emitting diode 410 and may generate a second electrical signal for correcting the brightness of the second light-emitting diode 410, but this is not limiting. According to this embodiment, the wavelength of the first light ray L1' may be greater than the wavelength of the second light ray L2'. The wavelength range of the first light ray L1' may be, for example, from 495 nanometers (nm) to 570 nanometers (495nm ≤ L1' ≤ 570nm), and the wavelength range of the second light ray L2' may be, for example, from 450 nanometers to 495 nanometers (450nm ≤ L2' ≤ 495nm). For example, the first light ray L1' may include green light, and the second light ray L2' may include blue light, but this is not limiting. It should be noted that the "wavelength of the first light ray L1' is greater than the wavelength of the second light ray L2'" here may mean that the peak-to-peak value of the spectrogram of the first light ray L1' is greater than the peak-to-peak value of the spectrogram of the second light ray L2'. The spectrograms of the first light ray L1' and the second light ray L2' may be measured externally (or on the display surface) for the first light ray L1' emitted by the first light-emitting diode 408 and the second light ray L2' emitted by the second light-emitting diode 410, respectively, but this is not limiting. Although Figure 4The illustrated L2’ is emitted towards the substrate 402, but the emission direction or measurement direction of L2’ is not limited herein. According to this embodiment, when the electronic device 400 is operating, the first light ray L1’ and the second light ray L2’ can be emitted simultaneously or non-simultaneously. That is to say, when the first light-emitting diode 408 emits the first light ray L1’, the second light-emitting diode 410 can simultaneously emit the second light ray L2’, or the time when the first light-emitting diode 408 emits the first light ray L1’ and the time when the second light-emitting diode 410 emits the second light ray L2’ can be staggered. Additionally, in this embodiment, as Figure 4 shown, the second electrode 410c of the second light-emitting diode 410 has an opening 410d. Therefore, the second light ray L2’ can be emitted by the second light-emitting diode 410, for example, and reach the second region R2 of the optical sensor 406 via the opening 410d, but it is not limited thereto. In other variant embodiments, the second electrode 410c of the second light-emitting diode 410 may not have the opening 410d, and the second light ray L2’ can directly pass through the second electrode 410c to reach the second region R2 of the optical sensor 406. For example, when the second electrode 410c is an opaque material (such as a metal material), an opening 410d can be provided in the second electrode 410c to allow the second light ray L2’ to pass through. When the second electrode 410c is a light-transmissive material (such as a transparent conductive material), there is no need to provide an opening 410d in the second electrode 410c. In one embodiment, the first electronic signal and the second electronic signal can be respectively used for fingerprint recognition, obtaining information of the ambient light source, correcting the brightness of the light-emitting diode 108, and / or other appropriate functions, but it is not limited thereto. For example, the optical sensor 406 can also use the first light ray L1’ to generate an electronic signal to generate a first electronic signal for correcting the brightness of the first light-emitting diode 408 and / or the second light-emitting diode 410.

[0034] Please refer to Figure 5 , Figure 5 which is a top view schematic diagram of a light-emitting diode and an optical sensor according to a variant embodiment of the third embodiment of the present invention. The electronic device 400 may include a first light-emitting diode 408, a second light-emitting diode 410, a third light-emitting diode 412, and an optical sensor 406. To simplify the drawing, Figure 5Only the light-emitting layer 408b and the second electrode 408c of the first light-emitting diode 408, the light-emitting layer 410b and the second electrode 410c of the second light-emitting diode 410, and the light-emitting layer 412b and the second electrode 412c of the third light-emitting diode 412 are shown. In one embodiment, adjacent first light-emitting diode 408, second light-emitting diode 410, and third light-emitting diode 412 can form a pixel, and the second light-emitting diode 410 partially overlaps with the optical sensor 406 in the thickness direction D1. In another embodiment, the optical sensor 460 can also partially overlap with the first light-emitting diode 408 in the thickness direction D1, and the first light-emitting diode 408 is disposed between the second light-emitting diode 410 and the third light-emitting diode 412. The first light-emitting diode 408 can emit light rays of a first color, the second light-emitting diode 410 can emit light rays of a second color, and the third light-emitting diode 412 can emit light rays of a third color, where the first color, the second color, and the third color can be different from each other, or at least two of them are the same, but not limited thereto. For example, the first color, the second color, and the third color are respectively one of red, green, and blue, but the present invention is not limited thereto. For example, since the degradation of the blue light-emitting diode may be more obvious than that of the red light-emitting diode and the green light-emitting diode, in order to enable the optical sensor 406 to detect the light emitted by the blue light-emitting diode and perform brightness correction, the second light-emitting diode 410 overlapping with the optical sensor 406 can be designed as a blue light-emitting diode, but not limited thereto. Additionally, according to this embodiment, an opening 410d can be provided on the second electrode 410c of the second light-emitting diode 410 so that light can reach the optical sensor via the opening 410d, for example, but not limited thereto. In other variant embodiments, the second electrode 410c may not include the opening 410d. In other embodiments, a pixel can include four or more light-emitting diodes, such as including a red light-emitting diode, a blue light-emitting diode, a green light-emitting diode, and a white light-emitting diode, but not limited thereto.

[0035] Please refer to Figures 6 to 7 , and refer to Figure 1 together. Figure 6 It is a functional block diagram of an exemplary operation method of an optical sensor according to the first embodiment of the present invention. Figure 7 It is a functional block diagram of another exemplary operation method of an optical sensor according to the first embodiment of the present invention. As Figure 6As shown, the electronic device 100 may further include a processor 130, and the processor 130 may include a fingerprint recognition unit 132 and a brightness correction unit 134. The optical sensor 106 may receive optical signals in a time-division manner and then convert the optical signals into a first electronic signal ES1 and a second electronic signal ES2. For example, the optical sensor 106 may convert the light rays L1 received by the first region R1 into the first electronic signal ES1 within a time interval and transmit it to the fingerprint recognition unit 132. After being processed or recognized by the fingerprint recognition unit 132, fingerprint information can be obtained. On the other hand, the optical sensor 106 may convert the light rays L2 received by the second region R2 into the second electronic signal ES2 within another time interval and transmit it to the brightness correction unit 134. The brightness correction unit 134 may determine the light-emitting effect of the light-emitting diode 108. If correction is required, the brightness correction unit 134 may issue a correction signal. That is, as described above, the optical sensor 106 may process the light rays received by the first region R1 and the second region R2 at different times respectively. As previously mentioned, the first electronic signal ES1 may be used for fingerprint recognition, for example, and the second electronic signal ES2 may be used for the brightness correction of the light-emitting diode, for example, but not limited thereto. In addition, the optical sensor 106 may selectively include an ambient light recognition unit 136. When the optical sensor 106 receives ambient light, the received ambient light may be converted into a third electronic signal ES3 and transmitted to the ambient light recognition unit 136. After being processed or recognized by the ambient light recognition unit 136, ambient light information can be obtained, but not limited thereto. According to this embodiment, the ambient light may be received by the first region R1 of the optical sensor 106, for example, but not limited thereto. Please refer to Figure 7 , in another exemplary operation method, the processor 130 of the electronic device 100 may further include an electrical signal distributor 138. According to this embodiment, the optical sensor 106 may receive only one light ray. In one embodiment, the light ray may include the simultaneously emitted light rays L1 and L2. The light ray may be converted into an electrical signal ES, and in the processor 130, the electrical signal distributor 138 may divide it into a first electronic signal ES1 and a second electronic signal ES2, and the first electronic signal ES1 and the second electronic signal ES2 may be sent to the fingerprint recognition unit 132 and the brightness correction unit 134 respectively at the same time. The uses of the first electronic signal ES1 and the second electronic signal ES2 may refer to the above content, so they will not be elaborated here. In a variant embodiment, Figure 7 the shown processor 130 may also include an ambient light recognition unit. The electrical signal distributor 138 may convert the electrical signal ES into a second electronic signal ES2 and a third electronic signal (not shown in the figure), and transmit them to the brightness correction unit 134 and the ambient light recognition unit respectively.

[0036] Please refer to Figure 8 , and refer to Figure 4 , Figure 8Schematic flowchart of an operation method of an electronic device according to a third embodiment of the present invention. The electronic device 400 may be, for example, a display device here, but is not limited thereto. As Figure 8 shown, the display device may selectively enter a fingerprint detection mode SFM or a brightness detection mode SCM. For example, when a user desires to enter the fingerprint detection mode SFM, step S100 may be performed to activate the fingerprint detection mode SFM. Then, the display device may perform step S102 to turn off the second light-emitting diode 410. The second light-emitting diode 410 may partially overlap with the optical sensor 406. For example, the sub-pixels corresponding to the second light-emitting diode 410 may be turned off. For example, when the display device enters the fingerprint detection mode SFM, the blue sub-pixels may be turned off, but it is not limited thereto. Since the fingerprint detection may be performed by a first electronic signal generated after the first light L1' of the first light-emitting diode 408 is received by the first region R1 of the optical sensor 406, in order to reduce the influence of the second light L2' emitted by the second light-emitting diode 410 on the detection result, the sub-pixels corresponding to the second light-emitting diode 410 may be turned off. After performing step S102, step S104 may be performed to receive the first light and generate a first electronic signal. The optical sensor 406 may, for example, receive the first light L1' emitted from the first light-emitting diode 408 and reflected by an object FG, and convert the first light L1' into a first electronic signal to identify fingerprint information, but it is not limited thereto. When a user desires to enter the brightness detection mode SCM, step S106 may be performed to activate the brightness detection mode SCM. Then, the display device may perform step S108 to turn off the first light-emitting diode. For example, the first light-emitting diode 408 that does not overlap with the optical sensor 406 may be turned off, or rather, the sub-pixels corresponding to the first light-emitting diode 408 may be turned off. For example, when the display device enters the brightness detection mode, the red sub-pixels or the green sub-pixels may be turned off, but it is not limited thereto. Since the brightness detection may be performed by a second electronic signal generated after the second light L2' of the second light-emitting diode 410 is received by the second region R2 of the optical sensor 406, in order to reduce the influence of the first light L1' emitted by the first light-emitting diode 408 on the detection result, the sub-pixels corresponding to the first light-emitting diode 408 may be turned off. After performing step S108, step S110 may be performed to receive the second light and generate a second electronic signal. The optical sensor 406 may, for example, receive the second light L2' emitted from the second light-emitting diode 410, and convert the second light L2' into a second electronic signal to confirm the brightness information, and thereby adjust the brightness of the second light-emitting diode 410, but it is not limited thereto.

[0037] Please refer to Figure 9 , Figure 9 Top view schematic diagram of an electronic device according to an embodiment of the present invention. As Figure 9As shown, the electronic device of the present invention can be applied as a display device 900, which may include a display area IR and a peripheral area PR, and the display device 900 may further include a plurality of optical sensors distributed in the display area IR ( Figure 9 not shown). The optical sensors herein may refer to Figures 1 to 5 any of the optical sensors, and the display device 900 may include Figures 1 to 5 any of the electronic devices, such as Figure 4The electronic device 400 shown includes a first light-emitting diode 408 and a second light-emitting diode 410. In a general display mode, as shown in part (I), the entire display area IR can display an integral image screen, but is not limited thereto. In a fingerprint detection mode, as shown in part (II), the display area IR of the display device 900 can be divided into a fingerprint detection area Rf and a non-fingerprint detection area Rnf. For example, the fingerprint detection area Rf and the non-fingerprint detection area Rnf can respectively display different colors or patterns. In some embodiments, in the fingerprint detection mode, each pixel in the non-fingerprint detection area Rnf can be turned off, that is, at least some of the light-emitting diodes in the non-fingerprint detection area Rnf are turned off, and only the pixels or the light-emitting diodes in these pixels in the fingerprint detection area Rf are turned on. In other embodiments, when the display device 900 is in the fingerprint detection mode, at least one of the first light-emitting diode, the second light-emitting diode, and the third light-emitting diode in the fingerprint detection area Rf can be turned on (for example, the first light-emitting diode), and at least one of the other light-emitting diodes (for example, the second light-emitting diode and the third light-emitting diode) in the fingerprint detection area Rf can be turned off, or the light-emitting diodes overlapping with the optical sensor 406 can be turned off, but is not limited thereto. The optical sensor in the fingerprint detection area Rf can be used, for example, to receive the light reflected by the finger and generate an electronic signal, which can be used, for example, as a fingerprint identification signal, but is not limited thereto. The optical sensor in the non-fingerprint detection area Rnf can be used, for example, to receive ambient light and generate an electronic signal, which can be used, for example, as a background value signal, but is not limited thereto. It should be noted that when the display device 900 is in the fingerprint detection mode, in addition to receiving the light reflected by the finger, the optical sensor in the fingerprint detection area Rf may also receive ambient light. Therefore, the electronic signal generated by the optical sensor in the fingerprint detection area Rf for fingerprint identification may include noise caused by ambient light. To reduce the influence of ambient light on the fingerprint identification signal, the electronic signal generated by the optical sensor in the fingerprint detection area Rf can be subtracted from the background value signal generated by the optical sensor in the non-fingerprint detection area Rnf to obtain a corrected fingerprint identification signal. That is, the corrected fingerprint identification signal can be equal to the fingerprint identification signal minus the background value signal (ambient light), but is not limited thereto. In this way, the influence of ambient light in the process of fingerprint identification can be reduced. On the other hand, in some embodiments, when the display device 900 wants to perform a light-emitting diode correction mode, the first light-emitting diode in the display area IR can be turned off, only the second light-emitting diode can be turned on, and the optical sensor is used to receive the light emitted by the second light-emitting diode to collect the light-emitting information of the second light-emitting diode, and then optical correction is performed, but the present invention is not limited thereto.

[0038] In summary, the present invention provides an electronic device, which includes a substrate, an optical sensor, and a light-emitting diode. The optical sensor has a first region that does not overlap with the light-emitting diode and a second region that overlaps with the light-emitting diode. The first region of the optical sensor can receive the light emitted by the light-emitting diode and reflected by a finger and generate a first electrical signal, and the second region of the optical sensor can receive the light emitted by the light-emitting diode and generate a second electrical signal. Through the first electrical signal and the second electrical signal, the electronic device can have the functions of brightness correction and fingerprint recognition. In some embodiments, the optical sensor can also receive ambient light to collect ambient light information. In addition, since the optical sensor of the electronic device according to the present invention can have multiple functions, the volume of the electronic device can be reduced accordingly.

[0039] The above are only embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. An electronic device, characterized in that, comprising: a substrate; a circuit layer disposed on the substrate and including a switching element; a light-shielding layer disposed between the substrate and the circuit layer; a diode disposed on the substrate and electrically connected to the switching element; an optical sensing unit; and a sensing switch element electrically connected to the optical sensing unit; wherein, in a thickness direction of the substrate, the light-shielding layer overlaps the optical sensing unit.

2. The electronic device according to claim 1, characterized in that, in the thickness direction of the substrate, the light-shielding layer overlaps the switching element.

3. The electronic device according to claim 1, characterized in that, the optical sensing unit is disposed under the substrate.

4. The electronic device according to claim 1, characterized in that, the optical sensing unit is disposed between the diode and the substrate.

5. The electronic device according to claim 1, characterized in that, in the thickness direction of the substrate, the optical sensing unit overlaps the diode.

6. The electronic device according to claim 1, characterized in that, the sensing switch element is disposed under the optical sensing unit.

7. The electronic device according to claim 1, characterized in that, the optical sensing unit includes a first region and a second region, the first region does not overlap the diode, the second region overlaps the diode, and in the thickness direction of the substrate, the area of the first region is larger than the area of the second region.

8. The electronic device according to claim 7, characterized in that, the ratio range of the area of the second region to the area of the diode is from 0.1 to 1.

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