Substrate processing system and substrate processing method

Abstract

A substrate processing system (S) according to one embodiment of the present disclosure is provided with a processing fluid supply device (70), a substrate processing device (1), a supply line, and a temperature measurement unit. A processing fluid supply device (70) supplies a processing fluid adjusted to a predetermined temperature. A substrate processing apparatus (1) processes a substrate with a processing fluid supplied from a processing fluid supply device (70). The supply line is connected between the processing fluid supply device (70) and the substrate processing device (1). The temperature measuring unit measures at least one of the temperature of the processing fluid and the temperature of the supply line in the supply line.

Description

Technical Field

[0001] The disclosed embodiments relate to a substrate processing system and a substrate processing method. Background Art

[0002] Conventionally, the following substrate processing apparatus has been known (for example, refer to Patent Document 1): A liquid film for preventing drying is formed on the surface of a semiconductor wafer (hereinafter referred to as a wafer) or the like as a substrate, and the wafer on which the liquid film is formed is brought into contact with a processing fluid in a supercritical state to perform a drying process.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Patent No. 7109328 Gazette Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] The present disclosure provides a technique capable of stably processing a wafer using a processing fluid.

[0008] Solutions to the Problems

[0009] A substrate processing system according to an aspect of the present disclosure includes a processing fluid supply device, a substrate processing device, a supply line, and a temperature measurement unit. The processing fluid supply device supplies a processing fluid adjusted to a given temperature. The substrate processing device processes a substrate using the processing fluid supplied from the processing fluid supply device. The supply line is connected between the processing fluid supply device and the substrate processing device. The temperature measurement unit measures at least one of the temperature of the processing fluid and the temperature of the supply line in the supply line.

[0010] Effects of the Invention

[0011] According to the present disclosure, a wafer can be stably processed using a processing fluid. Brief Description of the Drawings

[0012] Figure 1 It is a diagram showing a structural example of a substrate processing apparatus according to an embodiment.

[0013] Figure 2 It is a diagram showing a structural example of a liquid processing unit according to an embodiment.

[0014] Figure 3 It is a schematic perspective view showing a structural example of a drying unit according to an embodiment.

[0015] Figure 4 It is a diagram showing a structural example of the overall substrate processing system according to an embodiment. Figure 4

[0016] Figure 5 This is a diagram showing an example of the piping structure of the substrate processing system according to the embodiment.

[0017] Figure 6 This is a diagram showing an example of the piping structure of the substrate processing system according to Modification 1 of the embodiment.

[0018] Figure 7 This is a diagram showing an example of the operation of the substrate processing system according to Modification 1 of the embodiment.

[0019] Figure 8 This is a diagram showing an example of the operation of the substrate processing system according to Modification 1 of the embodiment.

[0020] Figure 9 This is a diagram showing an example of the piping structure of the substrate processing system according to Modification 2 of the embodiment.

[0021] Figure 10 This is a diagram showing an example of the piping structure of the substrate processing system according to Modification 3 of the embodiment.

[0022] Figure 11 This is a diagram showing an example of the piping structure of the substrate processing system according to Modification 4 of the embodiment.

[0023] Figure 12 This is a flowchart showing the processing procedure of the substrate processing according to the embodiment.

[0024] Figure 13 This is a flowchart showing the processing procedure of the substrate processing according to Modifications 1 to 4 of the embodiment. Detailed Embodiments

[0025] Hereinafter, embodiments of the substrate processing system and the substrate processing method disclosed in the present application will be described in detail with reference to the drawings. In addition, the present disclosure is not limited by the embodiments shown below. It should be noted that the drawings are schematic, and the dimensional relationships between elements, the ratios of the elements, etc. may sometimes be different from the actual ones. Also, there may be parts where the dimensional relationships and ratios are different between the drawings.

[0026] Conventionally, the following type of substrate processing apparatus has been known: a liquid film for preventing drying is formed on the surface of a semiconductor wafer (hereinafter referred to as a wafer) or the like as a substrate, and the wafer on which the liquid film is formed is brought into contact with a supercritical processing fluid to perform a drying process.

[0027] On the other hand, when continuously drying a plurality of wafers in the substrate processing apparatus, sometimes the first wafer after the start of processing becomes a different processing state from the second and subsequent wafers.

[0028] Therefore, a technique capable of stably processing wafers using a processing fluid while solving the above problems is expected to be realized.

[0029] <Structure of Substrate Processing Apparatus>

[0030] First, with reference to Figure 1 the structure of the substrate processing apparatus 1 according to the embodiment will be described. Figure 1 FIG. is a diagram showing a structural example of the substrate processing apparatus 1 according to the embodiment. In addition, hereinafter, in order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis orthogonal to each other are defined, and the positive direction of the Z-axis is set as the vertically upward direction.

[0031] As Figure 1 shown, the substrate processing apparatus 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are disposed adjacent to each other.

[0032] The loading / unloading station 2 includes a carrier placement unit 11 and a transfer unit 12. A plurality of carriers C that accommodate a plurality of semiconductor wafers W (hereinafter referred to as "wafers W") in a horizontal state are placed on the carrier placement unit 11.

[0033] The transfer unit 12 is disposed adjacent to the carrier placement unit 11. A transfer device 13 and an interface unit 14 are disposed inside the transfer unit 12.

[0034] The substrate transfer device 13 includes a wafer holding mechanism for holding the wafer W. In addition, the transfer device 13 can move in the horizontal direction and the vertical direction and rotate about the vertical axis, and the transfer device 13 uses the wafer holding mechanism to transfer the wafer W between the carrier C and the interface unit 14.

[0035] The processing station 3 is disposed adjacent to the transfer unit 12. The processing station 3 includes a transfer block 4 and a plurality of processing blocks 5.

[0036] The transfer block 4 includes a transfer area 15 and a transfer device 16. The transfer area 15 is, for example, a rectangular parallelepiped-shaped area extending along the arrangement direction (X-axis direction) of the loading / unloading station 2 and the processing station 3. The transfer device 16 is disposed in the transfer area 15.

[0037] The transfer device 16 includes a wafer holding mechanism for holding the wafer W. In addition, the transfer device 16 can move in the horizontal direction and the vertical direction and rotate about the vertical axis, and the transfer device 16 uses the wafer holding mechanism to transfer the wafer W between the interface unit 14 and the plurality of processing blocks 5.

[0038] A plurality of processing blocks 5 are arranged adjacent to both sides of the transfer area 15. Specifically, the plurality of processing blocks 5 are arranged on one side (the positive Y-axis side) and the other side (the negative Y-axis side) of the transfer area 15 in a direction (Y-axis direction) orthogonal to the arrangement direction (X-axis direction) of the loading / unloading station 2 and the processing station 3.

[0039] In addition, although not shown, the plurality of processing blocks 5 are arranged in multiple layers (for example, three layers) along the vertical direction. Moreover, the transfer of the wafer W between the processing blocks 5 arranged on each layer and the transfer portion 14 is performed by one transfer device 16 arranged on the transfer block 4. In addition, the number of layers of the plurality of processing blocks 5 is not limited to three layers.

[0040] Each processing block 5 includes a liquid processing unit 17, a drying unit 18, and a supply unit 19. The drying unit 18 is an example of a processing chamber.

[0041] The liquid processing unit 17 performs a cleaning process of cleaning the upper surface of the wafer W serving as the pattern formation surface. In addition, the liquid processing unit 17 performs a liquid film formation process of forming a liquid film on the upper surface of the wafer W after the cleaning process. The structure of the liquid processing unit 17 will be described later.

[0042] The drying unit 18 performs a supercritical drying process on the wafer W after the liquid film formation process. Specifically, the drying unit 18 dries the wafer W by bringing the wafer W after the liquid film formation process into contact with a processing fluid in a supercritical state (hereinafter, also referred to as "supercritical fluid"). The structure of the drying unit 18 will be described later.

[0043] The supply unit 19 supplies a processing fluid to the drying unit 18. Specifically, the supply unit 19 includes a supply equipment group including a flow meter, a flow regulator, a back pressure valve, a heater, etc., and a housing that houses the supply equipment group. In the present embodiment, the supply unit 19 supplies CO 2 as a processing fluid. The structure of the supply unit 19 will be described later.

[0044] In addition, a processing fluid supply device 70 (refer to Figure 4 ) for supplying a processing fluid is connected to the supply unit 19. In the embodiment, the processing fluid supply device 70 supplies CO 2 as a processing fluid to the supply unit 19. The details of the processing fluid supply device 70 will be described later.

[0045] The liquid processing unit 17, the drying unit 18, and the supply unit 19 are arranged along the transfer area 15 (that is, along the X-axis direction). Among the liquid processing unit 17, the drying unit 18, and the supply unit 19, the liquid processing unit 17 is arranged at the position closest to the loading / unloading station 2, and the supply unit 19 is arranged at the position farthest from the loading / unloading station 2.

[0046] In this way, each processing block 5 includes one liquid processing unit 17, one drying unit 18, and one supply unit 19. That is, in the substrate processing apparatus 1, the liquid processing unit 17, the drying unit 18, and the supply unit 19 are provided in the same number.

[0047] In addition, the drying unit 18 includes a processing area 18a for performing supercritical drying processing, and a transfer area 18b for transferring the wafer W between the transfer block 4 and the processing area 18a. These processing area 18a and transfer area 18b are arranged along the transfer area 15.

[0048] Specifically, the transfer area 18b in the processing area 18a and the transfer area 18b is arranged on the side closer to the liquid processing unit 17 than the processing area 18a. That is, in each processing block 5, the liquid processing unit 17, the transfer area 18b, the processing area 18a, and the supply unit 19 are arranged in this order along the transfer area 15.

[0049] As Figure 1 shown, the substrate processing apparatus 1 includes a control device 6. The control device 6 is, for example, a computer, and includes a control unit 7 and a storage unit 8.

[0050] The control unit 7 includes a microcomputer having a CPU (Central Processing Unit), a ROM (ReadOnly Memory), a RAM (Random Access Memory), input / output ports, and various circuits. The CPU of the microcomputer realizes the control of the transfer devices 13 and 16, the liquid processing unit 17, the drying unit 18, the supply unit 19, etc. by reading and executing the program stored in the ROM.

[0051] In addition, the program can also be stored in a computer-readable storage medium and installed from the storage medium into the storage unit 8 of the control device 6. As the computer-readable storage medium, for example, there are a hard disk (HD), a floppy disk (FD), a compact disc (CD), a magneto-optical disc (MO), a memory card, etc.

[0052] The storage unit 8 is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disc.

[0053] In the substrate processing apparatus 1 configured as described above, first, the transfer device 13 at the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11, and places the taken-out wafer W on the transfer unit 14. The wafer W placed on the transfer unit 14 is taken out from the transfer unit 14 by the transfer device 16 at the processing station 3 and transferred into the processing unit 17.

[0054] After the wafer W carried into the liquid processing unit 17 has been subjected to a cleaning process and a liquid film forming process by the liquid processing unit 17, it is carried out of the liquid processing unit 17 by the transfer device 16. The wafer W carried out of the liquid processing unit 17 is carried into the drying unit 18 by the transfer device 16, and the drying process is performed by the drying unit 18.

[0055] The wafer W after the drying process by the drying unit 18 is carried out of the drying unit 18 by the transfer device 16 and placed on the transfer portion 14. Then, the processed wafer W placed on the transfer portion 14 is returned to the carrier C of the carrier placement portion 11 by the transfer device 13.

[0056] <Structure of the Liquid Processing Unit>

[0057] Next, with reference to Figure 2 the structure of the liquid processing unit 17 will be described. Figure 2 is a diagram showing a structural example of the liquid processing unit 17. The liquid processing unit 17 is configured as a single-sheet cleaning device that cleans the wafer W one by one by rotational cleaning, for example.

[0058] As Figure 2 shown, the liquid processing unit 17 holds the wafer W substantially horizontally by the wafer holding mechanism 25, and rotates the wafer W by rotating the wafer holding mechanism 25 about the vertical axis. The wafer holding mechanism 25 is disposed in the outer chamber 23 that forms the processing space.

[0059] Moreover, the liquid processing unit 17 performs the cleaning process on the upper surface of the wafer W by moving the nozzle arm 26 above the rotating wafer W and supplying a chemical solution and a rinse solution from the chemical solution nozzle 26a provided at the front end portion of the nozzle arm 26 in a predetermined order.

[0060] In addition, in the liquid processing unit 17, a chemical solution supply path 25a is also formed inside the wafer holding mechanism 25. Moreover, the lower surface of the wafer W is also cleaned with the chemical solution and the rinse solution supplied from the chemical solution supply path 25a.

[0061] In the cleaning process, for example, first, the removal of fine particles and organic contaminants is performed using SC1 solution (a mixed solution of ammonia and hydrogen peroxide water) as an alkaline chemical solution. Next, rinse cleaning is performed using deionized water (DeIonized Water: hereinafter, referred to as "DIW") as a rinse solution.

[0062] Next, the removal of the natural oxide film is performed using a diluted hydrofluoric acid aqueous solution (Diluted HydroFluoric acid: hereinafter, referred to as "DHF") as an acidic chemical solution, and then rinse cleaning is performed using DIW.

[0063] The various liquid medicines described above are received by the outer chamber 23 and the inner cup 24 disposed within the outer chamber 23, and are discharged from a liquid discharge port 23a provided at the bottom of the outer chamber 23 and a liquid discharge port 24a provided at the bottom of the inner cup 24. Moreover, the atmosphere within the outer chamber 23 is discharged from an exhaust port 23b provided at the bottom of the outer chamber 23.

[0064] After the rinsing process in the cleaning process, a liquid film forming process is performed. Specifically, the liquid processing unit 17 supplies liquid-state IPA (Isopropyl Alcohol) (hereinafter also referred to as "IPA liquid") to the upper and lower surfaces of the wafer W while rotating the wafer holding mechanism 25. Thereby, the DIW remaining on both surfaces of the wafer W is replaced with IPA. After that, the liquid processing unit 17 slowly stops the rotation of the wafer holding mechanism 25.

[0065] The wafer W that has completed the liquid film forming process is transferred to the transfer device 16 by an unillustrated transfer mechanism provided in the wafer holding mechanism 25 while maintaining a state in which a liquid film of IPA liquid is formed on its upper surface, and is carried out from the liquid processing unit 17.

[0066] The liquid film formed on the wafer W prevents pattern collapse due to evaporation (vaporization) of the liquid on the upper surface of the wafer W during the process of transferring the wafer W from the liquid processing unit 17 to the drying unit 18 and during the operation of loading the wafer W into the drying unit 18.

[0067] <Structure of the drying unit>

[0068] Next, with reference to Figure 3 the structure of the drying unit 18 will be described. Figure 3 is a schematic perspective view showing a structural example of the drying unit 18.

[0069] The drying unit 18 includes a main body 31, a holding plate 32, and a lid member 33. An opening 34 for loading and unloading the wafer W is formed in the housing-shaped main body 31. The holding plate 32 holds the wafer W to be processed in a horizontal direction. The lid member 33 supports the holding plate 32 and closes the opening 34 when the wafer W is loaded into the main body 31.

[0070] The main body 31 is a container having a processing space inside that can accommodate, for example, a wafer W with a diameter of 300 mm. Supply ports 35, 36 and a discharge port 37 are provided in the wall portion of the main body 31. The supply ports 35, 36 and the discharge port 37 are respectively connected to a supply flow path and a discharge flow path for allowing a supercritical fluid to flow through the drying unit 18.

[0071] The supply port 35 is connected to the side surface of the housing-shaped main body 31 on the side opposite to the opening 34. Further, the supply port 36 is connected to the bottom surface of the main body 31. And, the discharge port 37 is connected to the lower side of the opening 34. In addition, in Figure 3 two supply ports 35, 36 and one discharge port 37 are illustrated, but the number of the supply ports 35, 36 and the discharge port 37 is not particularly limited.

[0072] In addition, a fluid supply manifold 38, 39 and a fluid discharge manifold 40 are provided inside the main body 31. Moreover, in the fluid supply manifolds 38, 39, a plurality of supply ports are formed to be arranged along the long side direction of the fluid supply manifolds 38, 39, and in the fluid discharge manifold 40, a plurality of discharge ports are formed to be arranged along the long side direction of the fluid discharge manifold 40.

[0073] The fluid supply manifold 38 is connected to the supply port 35, and the fluid supply manifold 38 is provided adjacent to the side surface of the housing-shaped main body 31 on the side opposite to the opening 34 inside the main body 31. In addition, the plurality of supply ports formed in the fluid supply manifold 38 face the opening 34 side.

[0074] The fluid supply manifold 39 is connected to the supply port 36, and the fluid supply manifold 39 is provided at the central portion of the bottom surface inside the housing-shaped main body 31. In addition, the plurality of supply ports formed in the fluid supply manifold 39 face upward.

[0075] The fluid discharge manifold 40 is connected to the discharge port 37, and the fluid discharge manifold 40 is adjacent to the side surface on the opening 34 side inside the housing-shaped main body 31 and is provided at a position lower than the opening 34. In addition, the plurality of discharge ports formed in the fluid discharge manifold 40 face upward.

[0076] The fluid supply manifolds 38, 39 are used to supply supercritical fluid into the main body 31. In addition, the fluid discharge manifold 40 is used to guide the supercritical fluid inside the main body 31 to the outside of the main body 31 for discharge. Moreover, the supercritical fluid discharged to the outside of the main body 31 via the fluid discharge manifold 40 contains IPA liquid dissolved from the surface of the wafer W into the supercritical fluid in the supercritical state.

[0077] In the drying unit 18, the IPA liquid between the patterns formed on the wafer W gradually dissolves in the supercritical fluid by contacting with the supercritical fluid in a high-pressure state (for example, 16 MPa), and the space between the patterns is gradually replaced by the supercritical fluid. And finally, only the supercritical fluid fills the space between the patterns.

[0078] Moreover, after removing the IPA liquid from between the patterns, the pressure inside the main body 31 is reduced from the high-pressure state to the atmospheric pressure, whereby CO 2Changing from the supercritical state to the gas state, only gas occupies the spaces between the patterns. By doing so, the IPA liquid between the patterns is removed, and the drying process of the wafer W is completed.

[0079] Here, in addition to having a lower viscosity and a higher ability to dissolve liquids compared to liquids (such as IPA liquid), there is no interface between the supercritical fluid and the liquid and gas in an equilibrium state. Therefore, in the drying process using the supercritical fluid, the liquid can be dried without being affected by the surface tension. Thus, according to the embodiment, pattern collapse can be suppressed during the drying process.

[0080] In addition, in the embodiment, an example is shown in which IPA liquid is used as the liquid for preventing drying, and supercritical CO 2 is used as the processing fluid. However, liquids other than IPA can also be used as the liquid for preventing drying, and fluids other than supercritical CO 2 can also be used as the processing fluid.

[0081] <Structure of the substrate processing system>

[0082] Next, with reference to Figure 4 and Figure 5 the structure of the substrate processing system S according to the embodiment will be described. Figure 4 is a diagram showing a structural example of the entire substrate processing system S according to the embodiment. In addition, each part of the substrate processing system S shown below can be controlled by the control unit 7.

[0083] The substrate processing system S includes a processing fluid supply source 60, a processing fluid supply device 70, and a substrate processing device 1. The processing fluid supply device 70 supplies the processing fluid supplied from the processing fluid supply source 60 to the substrate processing device 1.

[0084] As shown in Figure 4 , the substrate processing device 1 has a plurality of drying units 18 and a plurality of supply units 19, and processes the wafer W using the processing fluid supplied via the corresponding supply unit 19 (refer to Figure 5 ).

[0085] The processing fluid supply source 60 is connected to the plurality of drying units 18 through a processing fluid supply line 61, and the processing fluid is supplied from the processing fluid supply source 60 to the plurality of drying units 18 via this processing fluid supply line 61.

[0086] The processing fluid supply line 61 has a first supply line 62 and a plurality of second supply lines 63 (refer to Figure 5) multiple third supply lines 64 and multiple fourth supply lines 65. The third supply line 64 is an example of a supply line, and the fourth supply line 65 is an example of other supply lines.

[0087] The first supply line 62 is configured to supply a processing fluid from a processing fluid supply source 60 to a processing fluid supply device 70. In addition, the first supply line 62 branches into a plurality of second supply lines 63 within the processing fluid supply device 70.

[0088] The second supply line 63, the third supply line 64, and the fourth supply line 65 are connected in series in this order, and are configured to supply the processing fluid from the processing fluid supply device 70 to the drying unit 18 via the supply unit 19.

[0089] The second supply line 63 is located within the processing fluid supply device 70. The third supply line 64 is connected between the processing fluid supply device 70 and the substrate processing device 1. The fourth supply line 65 is located within the substrate processing device 1.

[0090] Figure 5 is a diagram showing an example of the piping structure of the substrate processing system S according to the embodiment. As Figure 5 shown, the processing fluid supply device 70 has a processing fluid supply line 61. The processing fluid supply line 61 includes a first supply line 62 and a plurality (two in the figure) of second supply lines 63.

[0091] The first supply line 62 is configured to supply a processing fluid from a processing fluid supply source 60 to a processing fluid supply device 70. In addition, the first supply line 62 branches into a plurality of second supply lines 63 within the processing fluid supply device 70.

[0092] In the first supply line 62, a valve 66, a check valve 67, a confluence portion 71, a plurality (two in the figure) of confluence portions 72, a filter 73, a condenser 74, a tank 75, a pump 76, and a branch portion 77 are provided in this order from the upstream side with respect to the processing fluid supply source 60. In addition, in the first supply line 62, a pressure sensor 78 and a branch portion 79 are provided in this order from the upstream side with respect to the branch portion 77.

[0093] The valve 66 is a valve that adjusts the opening and closing of the flow of the processing fluid, and allows the processing fluid to flow to the downstream check valve 67 in the open state, and does not allow the processing fluid to flow to the downstream check valve 67 in the closed state. The check valve 67 prevents the processing fluid in the first supply line 62 from flowing back to the upstream side of the check valve 67.

[0094] The confluence portion 71 is configured to allow the first supply line 62 to merge with a return line 90 described later. The confluence portion 72 is configured to allow the first supply line 62 to merge with a return line 100 described later.

[0095] In addition, in the first supply line 62, a processing fluid in a gaseous state is supplied from the processing fluid supply source 60. Moreover, the processing fluid in a liquid state that returns from the plurality of return lines 100 to the first supply line 62 changes from the liquid state to the gaseous state due to the high-temperature gaseous processing fluid that returns from the return line 90 to the first supply line 62. Thus, the gaseous processing fluid flows into the filter 73.

[0096] The filter 73 is, for example, a gas filter that filters the gaseous processing fluid flowing in the first supply line 62 to remove foreign substances contained in the processing fluid. By removing the foreign substances in the processing fluid with this filter 73, generation of fine particles on the surface of the wafer W can be suppressed during the drying process of the wafer W using a supercritical fluid.

[0097] The condenser 74 is connected to a cooling water supply unit (not shown), for example, and can perform heat exchange between the cooling water and the gaseous processing fluid. Thus, the condenser 74 cools the gaseous processing fluid flowing in the first supply line 62 to generate a processing fluid in a liquid state at a given temperature lower than room temperature (for example, about 15 (°C)).

[0098] The tank 75 stores the low-temperature liquid-state processing fluid generated by the condenser 74. The pump 76 pressurizes and conveys the low-temperature liquid-state processing fluid stored in the tank 75 to the downstream side of the first supply line 62. The return line 90 described later branches off from the branch portion 77.

[0099] The pressure sensor 78 measures the pressure of the processing fluid flowing in the first supply line 62. A plurality (two in the figure) of second supply lines 63 branch off from the branch portion 79.

[0100] In each of the second supply lines 63, an orifice 80, a branch portion 81, and a pressure sensor 82 are provided in sequence from the upstream side with respect to the branch portion 79. The orifice 80 reduces the flow rate of the low-temperature liquid-state processing fluid flowing in the second supply line 63 to adjust the pressure.

[0101] The return line 100 branches off from the branch portion 81. The pressure sensor 82 measures the pressure of the processing fluid flowing in the second supply line 63.

[0102] The return line 100 is used to return the liquid-state processing fluid flowing in the second supply line 63 to the confluence portion 72 of the first supply line 62. By returning the processing fluid upstream through the return line 100 in this way, the number of times of filtration can be increased and the performance of removing foreign substances can be improved.

[0103] In the return line 100, a back pressure valve 101 and a valve 102 are provided in sequence from the upstream side with respect to the branch portion 81.

[0104] The back pressure valve 101 is configured to maintain the primary side pressure at the set pressure by adjusting the valve opening to allow the fluid to flow to the secondary side when the primary side pressure in the return line 100 exceeds the set pressure. In addition, the valve opening and the set pressure of the back pressure valve 101 can be changed at any time by the control unit 7 (refer to Figure 1 ).

[0105] The valve 102 is a valve that adjusts the opening and closing of the flow of the processing fluid. In the open state, it allows the processing fluid to flow to the downstream confluence part 72, and in the closed state, it prevents the processing fluid from flowing to the downstream confluence part 72.

[0106] Moreover, the liquid-state processing fluid returned from the return line 100 returns to the confluence part 72 of the first supply line 62. In addition, the liquid-state processing fluid returned from the confluence part 72 changes from the liquid state to the gas state by passing through the high-temperature gas-state processing fluid flowing in the first supply line 62 and returning from the confluence part 71.

[0107] The return line 90 branched from the branch part 77 of the first supply line 62 is used to return the liquid-state processing fluid flowing in the first supply line 62 to the confluence part 71 of the first supply line 62. By returning the processing fluid upstream through the return line 90 like this, the number of times of filtration can be increased and the performance of removing foreign substances can be improved.

[0108] In the return line 90, a spiral heater 91, a back pressure valve 92, and a valve 93 are provided in sequence from the upstream side with the branch part 77 as the reference. The spiral heater 91 is wound around the return line 90 to heat the liquid-state processing fluid flowing in the return line 90 to generate a supercritical-state processing fluid.

[0109] The back pressure valve 92 is configured to maintain the primary side pressure at the set pressure by adjusting the valve opening to allow the fluid to flow to the secondary side when the primary side pressure in the return line 90 exceeds the set pressure.

[0110] Moreover, the back pressure valve 92 reduces the pressure of the supercritical-state processing fluid flowing in the return line 90 to generate a gas-state processing fluid. In addition, the valve opening and the set pressure of the back pressure valve 92 can be changed at any time by the control unit 7.

[0111] The valve 93 is a valve that adjusts the opening and closing of the flow of the processing fluid. In the open state, it allows the processing fluid to flow to the downstream confluence part 71, and in the closed state, it prevents the processing fluid from flowing to the downstream confluence part 71.

[0112] Moreover, the high-temperature gas-state processing fluid generated by the back pressure valve 92 returns to the confluence part 71 of the first supply line 62 via the valve 93.

[0113] The processing fluid supply device 70 described so far supplies the low-temperature liquid-state processing fluid toward the plurality of supply units 19 via the second supply line 63, the third supply line 64, and the fourth supply line 65. That is, in the embodiment, the processing fluid is supplied from the processing fluid supply device 70 to the substrate processing device 1 in a liquid state rather than in a gaseous state or a supercritical state.

[0114] Thereby, even if there is a deviation in the distance between the processing fluid supply device 70 and each drying unit 18, that is, the length of each third supply line 64, it is possible to reduce the defective conditions caused by the deviation in the length.

[0115] The control unit 7 measures the pressure of the processing fluid supplied from the second supply line 63, the third supply line 64, and the fourth supply line 65 toward the supply unit 19 by the pressure sensor 82, and controls the pressure by the valve opening degree of the back pressure valve 101. For example, the control unit 7 raises the set pressure on the primary side of the back pressure valve 101 to increase the pressure of the processing fluid supplied toward the supply unit 19.

[0116] In addition, for example, the control unit 7 lowers the set pressure on the primary side of the back pressure valve 101 to decrease the pressure of the processing fluid supplied toward the supply unit 19.

[0117] Similarly, the control unit 7 measures the pressure of the processing fluid supplied from the first supply line 62 toward the plurality of second supply lines 63 by the pressure sensor 78, and controls the pressure by the valve opening degree of the back pressure valve 92. Moreover, the control unit 7 appropriately controls the valve opening degree of the back pressure valve 92 so that the measured value of the pressure sensor 78 is constant.

[0118] In addition, in the embodiment, between the pump 76 and the back pressure valve 92, the processing fluid is changed from a liquid state to a supercritical state by the spiral heater 91. That is, between the pump 76 and the valve 41 or the back pressure valve 92 that may be in a closed state, the non-compressible liquid-state processing fluid does not fill, and a part becomes the compressible supercritical-state processing fluid.

[0119] Thereby, even when the non-compressible liquid-state processing fluid is sent out by the pump 76 in the first supply line 62, the pulsation generated by the pump 76 can be absorbed at the supercritical-state part. Therefore, according to the embodiment, when the pump 76 sends out the liquid-state processing fluid, the influence of the pulsation generated by the pump 76 can be reduced.

[0120] In the substrate processing device 1, the processing fluid flowing in the fourth supply line 65 is supplied to the drying unit 18 and discharged to the outside from the drying unit 18 via the discharge line 50.

[0121] In the fourth supply line 65 within the substrate processing apparatus 1, a valve 41, an orifice 42, a heater 43, a temperature sensor 44, a valve 45, and a filter 46 are provided in sequence from the upstream side.

[0122] The valve 41 is a valve that adjusts the opening and closing of the flow of the processing fluid. In the open state, it allows the processing fluid to flow to the downstream orifice 42, and in the closed state, it prevents the processing fluid from flowing to the downstream orifice 42.

[0123] The orifice 42 reduces the flow rate of the low-temperature liquid-state processing fluid flowing in the fourth supply line 65 and functions to adjust the pressure.

[0124] The heater 43 heats the liquid-state processing fluid flowing in the fourth supply line 65 to generate a supercritical-state processing fluid. The temperature sensor 44 detects the temperature of the supercritical-state processing fluid generated by the heater 43.

[0125] The valve 45 is a valve that adjusts the opening and closing of the flow of the processing fluid. In the open state, it allows the processing fluid to flow to the downstream filter 46, and in the closed state, it prevents the processing fluid from flowing to the downstream filter 46.

[0126] The filter 46 filters the supercritical-state processing fluid flowing in the fourth supply line 65 to remove foreign substances contained in the processing fluid. By removing foreign substances in the processing fluid with this filter 46, generation of particles on the surface of the wafer W can be suppressed during the drying process of the wafer W using a supercritical fluid.

[0127] A temperature sensor 47 is provided in the drying unit 18. This temperature sensor 47 detects the temperature of the processing fluid filled in the drying unit 18.

[0128] In the discharge line 50, a pressure sensor 51, a valve 52, a flow meter 53, and a back pressure valve 54 are provided in sequence from the upstream side. The pressure sensor 51 measures the pressure of the processing fluid flowing in the discharge line 50. In addition, since the pressure sensor 51 is directly connected to the drying unit 18 via the discharge line 50, the pressure of the processing fluid measured by the pressure sensor 51 is a value approximately equal to the internal pressure of the processing fluid in the drying unit 18.

[0129] The valve 52 is a valve that adjusts the opening and closing of the flow of the processing fluid. In the open state, it allows the processing fluid to flow to the downstream discharge portion DR, and in the closed state, it prevents the processing fluid from flowing to the downstream discharge portion DR. The flow meter 53 measures the flow rate of the processing fluid flowing in the discharge line 50.

[0130] The back pressure valve 54 is configured to maintain the primary side pressure at a set pressure by adjusting the valve opening to allow the fluid to flow to the secondary side when the primary side pressure in the discharge line 50 exceeds the set pressure. In addition, the valve opening and the set pressure of the back pressure valve 54 can be changed by the control unit 7 at any time.

[0131] Here, in the drying unit 18 of the substrate processing apparatus 1, when processing the wafers W one by one continuously, in the second and subsequent wafers W after the start of processing, the low-temperature liquid state processing fluid is continuously supplied to the heater 43, and the heater 43 changes the low-temperature liquid state processing fluid into a supercritical state processing fluid. Then, by supplying the supercritical state processing fluid to the drying unit 18, the drying process of the wafer W is performed.

[0132] On the other hand, in the first wafer W after the start of processing, the liquid state processing fluid remaining in the third supply line 64 is supplied to the heater 43 through the valve 41 that is in a closed state until just before the start of processing. The liquid state processing fluid remaining in the third supply line 64 has its temperature rise to room temperature during retention, and thus has a smaller density compared to when it is at a low temperature.

[0133] Therefore, when heating is performed by the heater 43 under the same process conditions as those for the second wafer W and supplied to the drying unit 18, due to the different densities of the processing fluid flowing in the heater 43, the behavior of the temperature and pressure of the processing fluid is different from that of the second and subsequent wafers W.

[0134] As a result, in the first wafer W and the second and subsequent wafers W, sometimes different processing states are obtained after the drying process.

[0135] Therefore, in the embodiment, as Figure 5 shown, a temperature sensor 110 is provided in the third supply line 64. The temperature sensor 110 is an example of a temperature measurement unit.

[0136] The control unit 7 measures at least one of the temperature of the processing fluid in the third supply line 64 and the temperature of the third supply line 64 itself using the temperature sensor 110, for example, before the wafer W is transferred into the drying unit 18.

[0137] Moreover, when the temperature measured by the temperature sensor 110 is the same as the temperature of the liquid state processing fluid generated by the processing fluid supply device 70 (for example, in the case of the second and subsequent wafers W), the control unit 7 supplies the processing fluid to the drying unit 18 under the processing conditions of the reference process.

[0138] On the other hand, when the temperature measured by the temperature sensor 110 is different from the temperature of the liquid-state processing fluid generated by the processing fluid supply device 70 (for example, in the case of the first wafer W), the control unit 7 supplies the processing fluid to the drying unit 18 after changing the processing conditions from the reference process.

[0139] For example, when the temperature measured by the temperature sensor 110 is 20 (°C) or higher, the control unit 7 supplies the processing fluid to the drying unit 18 after changing the processing conditions from the reference process.

[0140] In this case, for example, the control unit 7 sets the pressure of the processing fluid supplied to the fourth supply line 65 via the second supply line 63 and the third supply line 64 to be slightly higher than that according to the processing conditions of the reference process by adjusting the valve opening of the back pressure valve 101.

[0141] Thereby, the density of the liquid-state processing fluid flowing in the heater 43 can be made uniform. Therefore, even when the temperature measured by the temperature sensor 110 is different from the temperature of the liquid-state processing fluid generated by the processing fluid supply device 70, the behavior of the temperature and pressure of the processing fluid can be made consistent in the first wafer W and the second and subsequent wafers W.

[0142] Therefore, according to the embodiment, a stable drying process can be performed using the processing fluid starting from the first wafer W after the start of the process.

[0143] In addition, in the embodiment, the control unit 7 may also change the temperature of the processing fluid heated by the heater 43 from the processing conditions of the reference process by adjusting the output of the heater 43.

[0144] Thereby, the density of the supercritical-state processing fluid supplied from the heater 43 to the drying unit 18 can be made uniform. Therefore, even when the temperature measured by the temperature sensor 110 is different from the temperature of the liquid-state processing fluid generated by the processing fluid supply device 70, the behavior of the temperature and pressure of the processing fluid can be made consistent in the first wafer W and the second and subsequent wafers W.

[0145] Therefore, according to the embodiment, a stable drying process can be performed using the processing fluid starting from the first wafer W after the start of the process.

[0146] In addition, in the embodiment, it is preferable that the control unit 7 measures the temperature using the temperature sensor 110 before loading the wafer W into the drying unit 18. Thereby, the temperature of the processing fluid in the third supply line 64 and the temperature of the third supply line 64 itself can be grasped in advance, and thus, the subsequent drying process of the wafer W can be smoothly performed.

[0147] In addition, the technology of the present disclosure is not limited to the case where the temperature is measured by the temperature sensor 110 before the wafer W is carried into the drying unit 18, and the temperature may also be measured by the temperature sensor 110 when the wafer W is carried into the drying unit 18 or after the wafer W is carried into the drying unit 18.

[0148] <Modification Example 1>

[0149] Next, various modification examples of the embodiment will be described with reference to Figures 6 to 11 FIGs. Figure 6 FIG. 10 is a diagram showing an example of the piping structure of the substrate processing system S according to Modification Example 1 of the embodiment.

[0150] As Figure 6 shown, in the substrate processing system S according to Modification Example 1, the structures of the processing fluid supply device 70 and the third supply line 64 are different from those of the above-described embodiment. Therefore, in the following examples, the same reference numerals are given to the same parts as those in the already described embodiment, etc., and detailed descriptions thereof are omitted.

[0151] Specifically, in Modification Example 1, a branch portion 120 is provided in the third supply line 64. The branch portion 120 is located, for example, at a position in the third supply line 64 near the substrate processing apparatus 1.

[0152] In addition, a return line 130 branches off from the branch portion 120. The return line 130 is an example of a temperature maintaining mechanism. The return line 130 joins the confluence portion 104 at a position upstream of the back pressure valve 101 in the return line 100.

[0153] A valve 131 is provided in the return line 130. The valve 131 is a valve that adjusts the opening and closing of the flow of the processing fluid, and allows the processing fluid to flow to the downstream confluence portion 104 in the open state, and does not allow the processing fluid to flow to the downstream confluence portion 104 in the closed state.

[0154] A valve 103 is provided at a position upstream of the confluence portion 104 in the return line 100. The valve 103 is a valve that adjusts the opening and closing of the flow of the processing fluid, and allows the processing fluid to flow to the downstream confluence portion 104 in the open state, and does not allow the processing fluid to flow to the downstream confluence portion 104 in the closed state.

[0155] In addition, in Modification Example 1, the temperature sensor 110 provided in the third supply line 64 in the above-described embodiment may also be provided.

[0156] Figure 7 FIG. 11 is a diagram showing an example of the operation of the substrate processing system S according to Modification Example 1 of the embodiment, and is a diagram for explaining the flow of the processing fluid when performing the drying process of the wafer W.

[0157] As Figure 7 shown by the thick dashed line in Figure 7 , in Modification 1, when performing the drying process of the wafer W, the low-temperature liquid-state processing fluid pressurized and transported by the pump 76 reaches the valve 41 of the fourth supply line 65 via the second supply line 63 and the third supply line 64.

[0158] Moreover, when performing the drying process of the wafer W, the valve 41 is controlled to be in an open state. Therefore, the processing fluid is supplied to the drying unit 18 via the fourth supply line 65.

[0159] In addition, in Modification 1, the liquid-state processing fluid returns to the confluence part 71 via the return line 90. In addition, the valve 103 is controlled to be in an open state. Therefore, the liquid-state processing fluid returns to the confluence part 72 from the branch part 81 via the return line 100. Moreover, at this time, the valve 131 of the return line 130 is controlled to be in a closed state. Therefore, in the return line 130, the processing fluid does not flow.

[0160] As Figure 7 shown, in Modification 1, when performing the drying process of the wafer W, the low-temperature liquid-state processing fluid continuously flows in the third supply line 64. Therefore, in the third supply line 64, no temperature rise of the processing fluid due to stagnation occurs.

[0161] Figure 8 FIG. is a diagram showing an example of the operation of the substrate processing system S according to Modification 1 of the embodiment, and is a diagram for explaining the flow of the processing fluid in the case where the drying process of the wafer W is not performed and the drying unit 18 is in a standby state.

[0162] When the drying unit 18 is in a standby state, as Figure 8 shown by the thick dashed line in Figure 8 , the low-temperature liquid-state processing fluid pressurized and transported by the pump 76 reaches the branch part 120 of the third supply line 64 via the second supply line 63 and the third supply line 64.

[0163] On the other hand, since the drying unit 18 is in a standby state, the valve 41 of the substrate processing apparatus 1 is controlled to be in a closed state, so that the liquid-state processing fluid does not flow into the fourth supply line 65.

[0164] On the other hand, in Modification 1, the valve 131 of the return line 130 is controlled to be in an open state, whereby the low-temperature liquid-state processing fluid reaching the branch part 120 of the third supply line 64 can return to the confluence part 72 via the return line 130 and the return line 100. Moreover, at this time, the valve 103 of the return line 100 is controlled to be in a closed state.

[0165] In this way, in Modification Example 1, by providing the return line 130, even when the drying unit 18 is in the standby state, the flow state of the processing fluid in the liquid state at a low temperature can be maintained in the third supply line 64.

[0166] Thereby, it is possible to suppress the retention of the processing fluid in the liquid state in the third supply line 64. Therefore, it is possible to make the temperature of the processing fluid located in the third supply line 64 consistent between the first wafer W and the second and subsequent wafers W after the start of processing.

[0167] Therefore, according to Modification Example 1, it is possible to make the behavior of the temperature and pressure of the processing fluid consistent between the first wafer W and the second and subsequent wafers W after the start of processing. Therefore, it is possible to perform a stable drying process using the processing fluid starting from the first wafer W after the start of processing.

[0168] In addition, in Modification Example 1, the return line 130 is preferably connected to a position near the substrate processing apparatus 1 in the third supply line 64. That is, in Modification Example 1, the branch portion 120 is preferably located at a position near the substrate processing apparatus 1 in the third supply line 64.

[0169] Thereby, when the drying unit 18 is in the standby state, it is possible to return most of the processing fluid in the liquid state located in the third supply line 64 using the return line 130. Therefore, it is possible to suppress the retention of most of the processing fluid in the liquid state located in the third supply line 64.

[0170] That is, in Modification Example 1, it is possible to make the temperature of the processing fluid located in the third supply line 64 highly accurately consistent between the first wafer W and the second and subsequent wafers W after the start of processing.

[0171] Therefore, according to Modification Example 1, it is possible to make the behavior of the temperature and pressure of the processing fluid highly accurately consistent between the first wafer W and the second and subsequent wafers W after the start of processing. Therefore, it is possible to perform a more stable drying process using the processing fluid starting from the first wafer W after the start of processing.

[0172] <Modification Example 2>

[0173] Figure 9 FIG. is an example showing the piping structure of the substrate processing system S according to Modification Example 2 of the embodiment. As Figure 9 shown, in the substrate processing system S according to Modification Example 2, the branch portion 120 is not located in the third supply line 64 but in the fourth supply line 65 within the substrate processing apparatus 1.

[0174] Specifically, in Modification Example 2, the branch portion 120 is located at a position upstream of the valve 41 in the fourth supply line 65.

[0175] Thus, similar to the above-described Modification 1, by providing the return line 130, even when the drying unit 18 is in a standby state, the flow state of the processing fluid in the liquid state at a low temperature can be maintained in the third supply line 64.

[0176] That is, in Modification 2, the retention of the processing fluid in the liquid state at a low temperature in the third supply line 64 can be suppressed. Therefore, the temperature of the processing fluid located in the third supply line 64 can be made consistent between the first wafer W and the second and subsequent wafers W after the start of processing.

[0177] Therefore, according to Modification 2, the behavior of the temperature and pressure of the processing fluid can be made consistent between the first wafer W and the second and subsequent wafers W after the start of processing. Thus, a stable drying process can be performed using the processing fluid starting from the first wafer W after the start of processing.

[0178] In addition, in Modification 2, by disposing the branch portion 120 in the fourth supply line 65 within the substrate processing apparatus 1, when the drying unit 18 is in a standby state, all of the processing fluid in the liquid state located in the third supply line 64 can be returned using the return line 130.

[0179] Thereby, the retention of all of the processing fluid in the liquid state located in the third supply line 64 can be suppressed. Therefore, the temperature of the processing fluid located in the third supply line 64 can be made highly accurately consistent between the first wafer W and the second and subsequent wafers W after the start of processing.

[0180] Therefore, according to Modification 2, the behavior of the temperature and pressure of the processing fluid can be made highly accurately consistent between the first wafer W and the second and subsequent wafers W after the start of processing. Thus, a more stable drying process can be performed using the processing fluid starting from the first wafer W after the start of processing.

[0181] <Modification 3>

[0182] Figure 10 FIG. is an example showing the piping structure of the substrate processing system S according to Modification 3 of the embodiment. As Figure 10 shown, in the substrate processing system S according to Modification 3, the branch portion 120 is located at a position between the heater 43 and the valve 45 in the fourth supply line 65.

[0183] Thus, similar to the above-described Modification 1, by providing the return line 130, even when the drying unit 18 is in a standby state, the flow state of the processing fluid in the liquid state at a low temperature can be maintained in the third supply line 64.

[0184] That is, in Modification 3, it is possible to suppress the retention of the processing fluid in the liquid state at low temperature in the third supply line 64. Therefore, it is possible to make the temperature of the processing fluid in the third supply line 64 consistent in the first wafer W and the second and subsequent wafers W after the start of processing.

[0185] Therefore, according to Modification 3, it is possible to make the behavior of the temperature and pressure of the processing fluid consistent in the first wafer W and the second and subsequent wafers W after the start of processing. Therefore, it is possible to perform stable drying processing using the processing fluid from the first wafer W after the start of processing.

[0186] In addition, in Modification 3, by disposing the branch portion 120 in the fourth supply line 65 within the substrate processing apparatus 1, when the drying unit 18 is in the standby state, it is possible to return all of the liquid-state processing fluid in the third supply line 64 using the return line 130.

[0187] Thereby, it is possible to suppress the retention of all of the liquid-state processing fluid in the third supply line 64. Therefore, it is possible to make the temperature of the processing fluid in the third supply line 64 highly accurately consistent in the first wafer W and the second and subsequent wafers W after the start of processing.

[0188] Therefore, according to Modification 3, it is possible to make the behavior of the temperature and pressure of the processing fluid highly accurately consistent in the first wafer W and the second and subsequent wafers W after the start of processing. Therefore, it is possible to perform more stable drying processing using the processing fluid from the first wafer W after the start of processing.

[0189] In addition, in Modification 3, when the drying unit 18 is in the standby state, the valve 41 is controlled to be in the open state instead of the closed state, and the valve 45 is controlled to be in the closed state.

[0190] <Modification 4>

[0191] In Modifications 1 to 3 described so far, an example in which the return line 130 is used as the temperature maintaining mechanism for maintaining the temperature of the processing fluid in the third supply line 64 is shown, but the present disclosure is not limited to this example.

[0192] Figure 11 FIG. is an example showing the piping structure of the substrate processing system S according to Modification 4 of the embodiment. As Figure 11 shown, in the substrate processing system S according to Modification 4, as the temperature maintaining mechanism for maintaining the temperature of the processing fluid in the third supply line 64, a cooling mechanism 140 for cooling the third supply line 64 is provided.

[0193] The cooling mechanism 140 is, for example, a cooler and is located at a position surrounding the third supply line 64. The cooling mechanism 140 maintains the temperature of the processing fluid located in the third supply line 64 at a given temperature (the temperature of the liquid-state processing fluid generated by the processing fluid supply device 70).

[0194] Thereby, it is also possible to make the temperature of the processing fluid located in the third supply line 64 consistent between the first wafer W and the second and subsequent wafers W after the start of processing.

[0195] Therefore, according to Modification 4, it is possible to make the behavior of the temperature and pressure of the processing fluid consistent between the first wafer W and the second and subsequent wafers W after the start of processing. Thus, it is possible to perform a stable drying process using the processing fluid starting from the first wafer W after the start of processing.

[0196] The substrate processing system S according to the embodiment includes a processing fluid supply device 70, a substrate processing device 1, a supply line (third supply line 64), and a temperature measurement unit (temperature sensor 110). The processing fluid supply device 70 supplies the processing fluid adjusted to a given temperature. The substrate processing device 1 processes a substrate (wafer W) using the processing fluid supplied from the processing fluid supply device 70. The supply line (third supply line 64) is connected between the processing fluid supply device 70 and the substrate processing device 1. The temperature measurement unit (temperature sensor 110) measures at least one of the temperature of the processing fluid and the temperature of the supply line (third supply line 64) in the supply line (third supply line 64). Thereby, it is possible to perform a stable drying process using the processing fluid starting from the first wafer W after the start of processing.

[0197] In addition, the substrate processing system S according to the embodiment further includes a control unit 7 that controls each unit. In the case where the temperature measured by the temperature measurement unit (temperature sensor 110) is different from the given temperature, the control unit 7 changes at least one of the pressure of the processing fluid supplied from the processing fluid supply device 70 and the temperature of the processing fluid heated in the substrate processing device 1 from the reference process. Thereby, it is possible to perform a stable drying process using the processing fluid starting from the first wafer W after the start of processing.

[0198] In addition, in the substrate processing system S according to the embodiment, before the substrate (wafer W) is carried into the processing chamber (drying unit 18) of the substrate processing device 1, the control unit 7 measures the temperature using the temperature measurement unit (temperature sensor 110). Thereby, it is possible to smoothly perform the drying process of the wafer W.

[0199] In addition, the substrate processing system S according to the embodiment includes a processing fluid supply device 70, a substrate processing device 1, a supply line (third supply line 64), and a temperature maintenance mechanism (return line 130, cooling mechanism 140). The processing fluid supply device 70 supplies a processing fluid adjusted to a given temperature. The substrate processing device 1 processes a substrate (wafer W) using the processing fluid supplied from the processing fluid supply device 70. The supply line (third supply line 64) is connected between the processing fluid supply device 70 and the substrate processing device 1. The temperature maintenance mechanism (return line 130, cooling mechanism 140) maintains the temperature of the processing fluid flowing in the supply line (third supply line 64) at a given temperature. Thereby, stable drying processing can be performed using the processing fluid from the first wafer W after the start of processing.

[0200] In addition, in the substrate processing system S according to the embodiment, the temperature maintenance mechanism is a return line 130 that returns the processing fluid flowing in the supply line (third supply line 64) to the processing fluid supply device 70. Thereby, stable drying processing can be performed using the processing fluid from the first wafer W after the start of processing.

[0201] In addition, the substrate processing system S according to the embodiment further includes a control unit 7 that controls each part. In addition, when the substrate (wafer W) is not carried into the processing chamber (drying unit 18) of the substrate processing device 1, the control unit 7 uses the return line 130 to return the processing fluid flowing in the supply line (third supply line 64) to the processing fluid supply device 70. Thereby, stable drying processing can be performed using the processing fluid from the first wafer W after the start of processing.

[0202] In addition, in the substrate processing system S according to the embodiment, the return line 130 is connected to a position near the substrate processing device 1 in the supply line (third supply line 64). Thereby, more stable drying processing can be performed using the processing fluid from the first wafer W after the start of processing.

[0203] In addition, in the substrate processing system S according to the embodiment, the substrate processing device 1 includes a processing chamber (drying unit 18), another supply line (fourth supply line 65), and a valve 41. The processing chamber (drying unit 18) processes the substrate (wafer W). The other supply line (fourth supply line 65) is connected between the supply line (third supply line 64) and the processing chamber (drying unit 18). The valve 41 is provided at a position on the upstream side of the other supply line (fourth supply line 65). In addition, the return line 130 is connected to a position on the upstream side of the valve 41 in the other supply line (fourth supply line 65). Thereby, more stable drying processing can be performed using the processing fluid from the first wafer W after the start of processing.

[0204] In addition, in the substrate processing system S according to the embodiment, the substrate processing apparatus 1 includes a processing chamber (drying unit 18), another supply line (fourth supply line 65), and a heating unit (heater 43). The processing chamber (drying unit 18) processes the substrate (wafer W). The other supply line (fourth supply line 65) is connected between the supply line (third supply line 64) and the processing chamber (drying unit 18). The heating unit (heater 43) is provided in the other supply line (fourth supply line 65) to heat the processing fluid. In addition, the return line 130 is connected to a position on the downstream side of the heating unit (heater 43). Thereby, it is possible to perform a more stable drying process using the processing fluid from the first wafer W after the start of processing.

[0205] In addition, in the substrate processing system S according to the embodiment, the processing fluid supply device 70 supplies a liquid state processing fluid having a temperature lower than room temperature to the substrate processing apparatus 1, and the substrate processing apparatus 1 processes the substrate (wafer W) using a supercritical state processing fluid. Thereby, even if there are deviations in the lengths of the plurality of third supply lines 64, it is possible to reduce the defective conditions caused by such length deviations.

[0206] <Process of substrate processing>

[0207] Next, with reference to Figure 12 and Figure 13 the process of substrate processing according to the embodiment will be described. Figure 12 FIG. is a flowchart showing the processing procedure of the substrate processing according to the embodiment.

[0208] In the substrate processing according to the embodiment, first, the control unit 7 controls the temperature sensor 110 to measure at least one of the temperature of the third supply line 64, here the temperature of the processing fluid in the third supply line 64 and the temperature of the third supply line 64 itself (step S101).

[0209] Then, when the temperature measured by the temperature sensor 110 is not different from the given temperature (the temperature of the liquid state processing fluid generated by the processing fluid supply device 70) (step S102: "No"), the control unit 7 reads in the reference process (step S103).

[0210] On the other hand, when the temperature measured by the temperature sensor 110 is different from the given temperature (the temperature of the liquid state processing fluid generated by the processing fluid supply device 70) (step S102: "Yes"), the control unit 7 changes the reference process (step S104).

[0211] Next, the control unit 7 controls the substrate processing apparatus 1 and the like to transfer the wafer W formed with a liquid film of IPA liquid into the drying unit 18 (step S105).

[0212] Next, the control unit 7 controls the processing fluid supply device 70, the substrate processing device 1, etc., to supply a supercritical processing fluid to the drying unit 18 (step S106). Then, the control unit 7 uses the drying unit 18 to perform a drying process on the wafer W (step S107).

[0213] Finally, the control unit 7 unloads the wafer W after the drying process from the drying unit 18 (step S108), and ends a series of substrate processes.

[0214] Figure 13 It is a flowchart showing the processing procedures of the substrate processes according to Modification Examples 1 to 4 of the embodiment.

[0215] In the substrate processes according to Modification Examples 1 to 4, first, the control unit 7 controls the return line 130, the cooling mechanism 140, etc., to maintain the temperature of the processing fluid in the third supply line 64 at a given temperature (the temperature of the liquid-state processing fluid generated by the processing fluid supply device 70) (step S201).

[0216] Next, the control unit 7 reads in a reference process (step S202). Then, the control unit 7 controls the substrate processing device 1, etc., to load the wafer W having a liquid film of IPA liquid into the drying unit 18 (step S203).

[0217] Next, the control unit 7 controls the processing fluid supply device 70, the substrate processing device 1, etc., to supply a supercritical processing fluid to the drying unit 18 (step S204). Then, the control unit 7 uses the drying unit 18 to perform a drying process on the wafer W (step S205).

[0218] Finally, the control unit 7 unloads the wafer W after the drying process from the drying unit 18 (step S206), and ends a series of substrate processes.

[0219] The substrate processing method according to the embodiment includes a processing fluid supply step (step S106), a substrate processing step (step S107), and a temperature measurement step (step S101). In the processing fluid supply step (step S106), a processing fluid adjusted to a given temperature is supplied. In the substrate processing step (step S107), the substrate (wafer W) is processed using the processing fluid supplied through the processing fluid supply step (step S106). In the temperature measurement step (step S101), at least one of the temperature of the processing fluid and the temperature of the supply line (third supply line 64) is measured in the supply line (third supply line 64). The supply line (third supply line 64) is connected between the processing fluid supply device 70 that performs the processing fluid supply step (step S106) and the substrate processing device 1 that performs the substrate processing step (step S107). Thereby, stable drying processing can be performed using the processing fluid from the first wafer W after the start of processing.

[0220] In addition, the substrate processing method according to the embodiment includes a processing fluid supply step (step S204), a substrate processing step (step S205), and a temperature maintenance step (step S201). In the processing fluid supply step (step S204), a processing fluid adjusted to a given temperature is supplied. In the substrate processing step (step S205), the substrate (wafer W) is processed using the processing fluid supplied through the processing fluid supply step (step S204). In the temperature maintenance step (step S201), the temperature of the processing fluid flowing in the supply line (third supply line 64) is maintained at a given temperature. The supply line (third supply line 64) is connected between the processing fluid supply device 70 that performs the processing fluid supply step (step S204) and the substrate processing device 1 that performs the substrate processing step (step S205). Thereby, stable drying processing can be performed using the processing fluid from the first wafer W after the start of processing.

[0221] As described above, the embodiments of the present disclosure have been described, but the present disclosure is not limited to the above-described embodiments, and various changes can be made without departing from the gist thereof. For example, in the above-described embodiment, an example in which the first supply line 62 branches into two second supply lines 63 is shown, but the present disclosure is not limited to this example, and the first supply line 62 may also branch into three second supply lines 63. In addition, the first supply line 62 may not branch into a plurality of second supply lines 63.

[0222] It should be considered that all points of the embodiments disclosed this time are illustrative and not restrictive. In fact, the above-described embodiments can be specifically implemented in various ways. In addition, the above-described embodiments can be omitted, replaced, and changed in various ways without departing from the appended claims and their gist.

[0223] Description of reference numerals

[0224] S: Substrate processing system; W: Wafer (an example of a substrate); 1: Substrate processing apparatus; 7: Control unit; 18: Drying unit (an example of a processing chamber); 41: Valve; 43: Heater (an example of a heating unit); 60: Processing fluid supply source; 61: Processing fluid supply line; 62: First supply line; 63: Second supply line; 64: Third supply line (an example of a supply line); 65: Fourth supply line (an example of another supply line); 70: Processing fluid supply device; 110: Temperature sensor (an example of a temperature measurement unit); 120: Branch; 130: Return line (an example of a temperature maintenance mechanism); 140: Cooling mechanism (an example of a temperature maintenance mechanism).

Claims

1. A substrate processing system, comprising: A processing fluid supply device that supplies a processing fluid adjusted to a given temperature; A substrate processing device that processes a substrate using the processing fluid supplied from the processing fluid supply device; A supply line that connects between the processing fluid supply device and the substrate processing device; and A temperature measurement unit that measures at least one of the temperature of the processing fluid and the temperature of the supply line in the supply line.

2. The substrate processing system according to claim 1, wherein, It further comprises a control unit that controls each part, When the temperature measured by the temperature measurement unit is different from the given temperature, the control unit changes at least one of the pressure of the processing fluid supplied from the processing fluid supply device and the temperature of the processing fluid heated in the substrate processing device from a reference process.

3. The substrate processing system according to claim 2, wherein, Before the substrate is loaded into the processing chamber of the substrate processing device, the control unit measures the temperature using the temperature measurement unit.

4. A substrate processing system, comprising: A processing fluid supply device that supplies a processing fluid adjusted to a given temperature; A substrate processing device that processes a substrate using the processing fluid supplied from the processing fluid supply device; A supply line that connects between the processing fluid supply device and the substrate processing device; and A temperature maintenance mechanism that maintains the temperature of the processing fluid flowing in the supply line at the given temperature.

5. The substrate processing system according to claim 4, wherein, The temperature maintenance mechanism is a return line that returns the processing fluid flowing in the supply line to the processing fluid supply device.

6. The substrate processing system according to claim 5, wherein, It further comprises a control unit that controls each part, When the substrate is not loaded into the processing chamber of the substrate processing device, the control unit uses the return line to return the processing fluid flowing in the supply line to the processing fluid supply device.

7. The substrate processing system according to claim 5 or 6, wherein, The return line is connected to a position near the substrate processing device in the supply line.

8. The substrate processing system according to claim 5 or 6, wherein, The substrate processing device has: A processing chamber that processes the substrate; Another supply line that connects between the supply line and the processing chamber; and A valve that is provided at an upstream position of the other supply line, The return line is connected to a position upstream of the valve in the other supply line.

9. The substrate processing system according to claim 5 or 6, wherein, The substrate processing device has: A processing chamber that processes the substrate; Another supply line that connects between the supply line and the processing chamber; and A heating unit that is provided in the other supply line and heats the processing fluid, The return line is connected to a position downstream of the heating unit.

10. The substrate processing system according to any one of claims 1 to 6, wherein, the processing fluid supply device supplies a processing fluid in a liquid state that is lower than room temperature to the substrate processing device, and the substrate processing device processes the substrate using a processing fluid in a supercritical state.

11. A substrate processing method, comprising the following steps: a processing fluid supply step of supplying a processing fluid adjusted to a given temperature; a substrate processing step of processing a substrate using the processing fluid supplied in the processing fluid supply step; and a temperature measurement step of measuring at least one of the temperature of the processing fluid and the temperature of the supply line in a supply line connected between a processing fluid supply device performing the processing fluid supply step and a substrate processing device performing the substrate processing step.

Images