Silicon carbide epitaxial growth method and equipment

Abstract

The invention provides a silicon carbide epitaxial growth method and equipment. The growth method comprises the following steps: identifying a stage when a fault occurs during epitaxial growth of a substrate, entering a first growth mode for epitaxial growth if the substrate is in an in-situ etching stage or a buffer layer growth stage, and entering a second growth mode for epitaxial growth if the substrate is in a main body layer growth stage. Through the implementation method, the scrapping loss of the substrate is reduced, the cost is reduced, and the economic benefit is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor deposition, and particularly to a method and apparatus for epitaxial growth of silicon carbide. Background Art

[0002] In the production of silicon carbide epitaxial wafers, CVD equipment is used for epitaxial growth. During the operation of the equipment, if a machine failure or downtime due to external factors occurs, the machine will automatically cool down and cut off the source gas, etc., interrupting the epitaxial growth. At this time, the epitaxial part that has already grown often has problems such as many surface defects, abnormal thickness, and poor surface crystallization quality due to the sudden change of the growth environment. If growth is directly restarted at the interruption point, problems such as decomposition and recombination of the surface SIC material, poor thickness uniformity of the epitaxial wafer, and an increase in the number of surface defects will occur, resulting in a decrease in various performance indicators, far from meeting the delivery standards. Generally, the epitaxial wafer will be scrapped, greatly increasing the operating cost. Summary of the Invention

[0003] The purpose of the present invention is to provide a method and apparatus for epitaxial growth of silicon carbide to solve the above-mentioned problems.

[0004] To achieve the above purpose, the present invention provides the following technical solutions:

[0005] A method for epitaxial growth of silicon carbide, the growth method comprising the following steps:

[0006] Identifying the stage at which a fault occurs during the epitaxial growth of the substrate,

[0007] If it is in the in-situ etching stage or the buffer layer growth stage, enter the first growth mode for epitaxial growth,

[0008] If it is in the main layer growth stage, enter the second growth mode for epitaxial growth.

[0009] Preferably, the identification of the stage at which a substrate fault occurs includes:

[0010] Obtaining the stage at which a fault occurs during the epitaxial growth of the substrate through a monitoring module, or inputting the stage based on a human-machine interface,

[0011] If the fault is not identified, by default, enter the first growth mode for epitaxial growth.

[0012] Preferably, the second growth mode includes the following steps:

[0013] Placing the substrate on the support part of the reaction chamber based on a manipulator;

[0014] Evacuating the reaction chamber;

[0015] Based on the spray component, gas is introduced into the reaction chamber to adjust the pressure in the reaction chamber to a preset pressure;

[0016] Based on the spray component, the introduced argon gas is switched to hydrogen gas and a small amount of HCL gas is introduced, and the hydrogen gas flow rate is gradually increased to the target value, the target value is between 70-150 slm, and the introduced mixed gas H 2 accounts for 90% - 99%, and the rest is HCL gas;

[0017] Using the combination of the first heater and the second heater or the first heater, the temperature in the reaction chamber is gradually increased to the process temperature, the process temperature is between 1600 °C and 1680 °C, and the surface of the substrate is subjected to high-temperature etching and cleaning treatment by using the mixed gas of H 2 and HCL, and the process temperature is maintained for a preset time. In the buffer layer growth stage, using the combination of the first heater and the second heater or the first heater, the temperature in the reaction chamber is heated to the process temperature, and the spray component is used to introduce process gas into the reaction chamber for a continuous time of T0 to grow a buffer layer with a certain film thickness on the surface of the substrate.

[0018] In the main layer growth stage, using the combination of the first heater and the second heater or the first heater to maintain the temperature in the reaction chamber at the process temperature, and based on the spray component, gas is introduced into the reaction chamber for a continuous time of T2 to grow the main layer on the surface of the substrate, and the growth is completed.

[0019] Preferably, in this silicon carbide epitaxial growth method, the continuous time T2 satisfies: T2 = T1 - T3, where T1 is the continuous time in the first growth mode, T3 is the growth duration when the machine is down, or T2 = T1 - T3 + T4, where T4 is a compensation coefficient, and it is between 5 - 50 s.

[0020] Preferably, after the growth is completed, it further includes:

[0021] Based on the spray component, the gas introduced into the reaction chamber is switched to hydrogen gas, and the temperature is reduced to the disk-taking temperature in the hydrogen atmosphere.

[0022] Based on the manipulator, the substrate is taken out and placed at a predetermined position.

[0023] Preferably, the disk-taking temperature is less than or equal to 800 °C.

[0024] Preferably, if it is in the in-situ etching stage or the buffer layer growth stage, it includes that the substrate needs to be cleaned and then enter the first growth mode for epitaxial growth.

[0025] Preferably, the first growth mode includes the following steps:

[0026] In-situ etching stage, in the in-situ etching stage, the surface of the substrate is in-situ etched with hydrogen gas.

[0027] During the buffer layer growth stage, the temperature in the reaction chamber is heated to the process temperature by using the combination of the first heater and the second heater or the first heater, and process gas is introduced into the reaction chamber by using the spraying component for a duration of T0 to grow a buffer layer with a certain film thickness on the substrate surface;

[0028] During the main layer growth stage, the temperature in the reaction chamber is maintained at the process temperature by using the combination of the first heater and the second heater or the first heater, and gas is introduced into the reaction chamber based on the spraying component for a duration of T1 to grow a main layer with a predetermined film thickness on the substrate surface.

[0029] The embodiment of the present application provides a silicon carbide epitaxial growth device, which includes:

[0030] At least one epitaxial growth module, a transfer module, a control module and a monitoring module,

[0031] The transfer module is arranged on one side of the epitaxial growth module and has a transfer device therein for putting the substrate into the epitaxial growth module or taking out the grown epitaxial wafer from the epitaxial growth module;

[0032] The control module controls the operation of the epitaxial growth module, the transfer module and the gas supply module based on instructions;

[0033] The monitoring module is electrically connected to the control module and is used to monitor the operation states of the epitaxial growth module, the transfer module and the gas supply module. The operation states at least include the etching stage, the buffer growth stage, the main layer growth stage of the epitaxial growth and the duration of the main layer growth stage,

[0034] When the silicon carbide epitaxial growth device operates, it executes the silicon carbide epitaxial growth method as described above.

[0035] Preferably, the silicon carbide epitaxial growth device further includes a human-machine interface, which is electrically connected to the control module, and the parameters of the epitaxial growth are adjusted through the human-machine interface.

[0036] Advantageous effects:

[0037] Through the silicon carbide epitaxial growth method proposed by the present application, the epitaxial layer can be continuously grown on the substrate whose growth is interrupted due to downtime of the equipment, and the concentration, thickness and uniformity of the epitaxial layer after extension are equivalent to those of the normally grown epitaxial wafer, which can reduce the substrate loss. Description of the drawings

[0038] To more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0039] Figure 1 Schematic diagram of the epitaxial growth equipment for the embodiments of the present application;

[0040] Figure 2 Schematic diagram of the epitaxial growth method for the embodiments of the present application;

[0041] Figure 3 Schematic flow diagram of the second growth mode for the embodiments of the present application. Detailed implementation manners

[0042] The following introduces the preferred embodiments of the present invention with reference to the drawings of the specification, demonstrating that the present invention can be implemented. The embodiments of the present invention can fully introduce the present invention to those skilled in the art, making its technical content clearer and easier to understand. The present invention can be embodied in many different forms of embodiments, and the protection scope of the present invention is not limited to the embodiments mentioned in the text.

[0043] In the drawings, components with the same structure are denoted by the same numerical labels, and components with similar structures or functions are denoted by similar numerical labels. The size and thickness of each component shown in the drawings are arbitrarily shown, and the present invention does not limit the size and thickness of each component. To make the illustration clearer, the thickness of some components in the drawings is appropriately exaggerated.

[0044] In addition, the following descriptions of the embodiments of the present invention refer to the additional drawings, which are used to illustrate specific embodiments in which the present invention can be implemented. The directional terms mentioned in the present invention, such as "up", "down", "front", "rear", "left", "right", "inside", "outside", "side", etc., are only references to the directions of the additional drawings. Therefore, the directional terms used are for better and clearer illustration and understanding of the present invention, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be construed as a limitation of the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes and cannot be construed as indicating or implying relative importance.

[0045] As described in the background, in the existing (silicon carbide) epitaxial growth process, during the epitaxial growth process, there are situations where the equipment encounters failures or downtime caused by external factors. At this time, the equipment will automatically cool down, cut off the source gas, etc. and stop the epitaxial growth. At this time, the epitaxial part that has already grown often has problems such as many surface defects, abnormal thickness, and poor surface crystallization quality due to the sudden change of the growth environment. Manufacturers generally scrap the substrate. Taking a single 8-inch silicon carbide as an example, its cost exceeds 20,000, which greatly increases the operating cost.

[0046] Therefore, the applicant proposes a silicon carbide epitaxial growth method. This growth method can be used for the normal epitaxial growth of the substrate, and can also be used for the epitaxial growth (continuous epitaxial growth) of the substrate whose epitaxial growth is interrupted due to equipment failures, etc. Under this method, the parameters of the epitaxial wafer for continuous epitaxial growth are the same or almost the same as those for normal epitaxial growth, which reduces the scrap loss of the substrate, reduces costs, and improves economic benefits.

[0047] Next, the silicon carbide epitaxial growth method and (epitaxial growth) equipment proposed in this application will be described with reference to the accompanying drawings.

[0048] As Figure 1 shown in the structural schematic of the silicon carbide epitaxial growth equipment.

[0049] The silicon carbide epitaxial growth equipment includes an epitaxial growth module 100 and a transfer module 200.

[0050] The transfer module 200 is arranged on one side of the epitaxial growth module 100 and has a transfer device 210 (such as a manipulator) inside, which is used to put the substrate (sometimes together with the tray) into the epitaxial growth module or take out the grown epitaxial wafer from the epitaxial growth module. In this embodiment, the substrate is a silicon carbide substrate with a size of 6 inches or 8 inches. In this embodiment, one epitaxial growth module 100 is arranged on one side of the transfer module 200. In other embodiments, two (structurally identical) epitaxial growth modules 100 are arranged on one side of the transfer module 200.

[0051] The silicon carbide epitaxial growth equipment further includes a control module, which controls the operation of the epitaxial growth module, the transfer module, and the gas supply module based on instructions. Preferably, the silicon carbide epitaxial growth equipment further includes a monitoring module, which is electrically connected to the control module. The monitoring module is used to monitor the operating states of the epitaxial growth module, the transfer module, and the gas supply module (and feedback the state information to the control module). For example, monitoring the state of the epitaxial growth module (such as being able to identify the process stage of the epitaxial growth before the failure when encountering equipment failure, so as to know the stage before the failure, such as the etching stage, the buffer growth stage, or the main layer growth stage). In this way, when re-epitaxially growing later (after eliminating the failure), the control module controls the epitaxial growth module to enter a matching growth mode.

[0052] The silicon carbide epitaxial growth equipment includes a human-machine interface, which is electrically connected to a control module. The parameters of epitaxial growth can be adjusted through the human-machine interface. Preferably, the human-machine interface can retrieve the status information monitored by the monitoring module to know the stage before the failure occurs, so as to adjust the parameters of epitaxial growth.

[0053] In one embodiment, a loading chamber and an unloading chamber are provided on one side of the transfer module 200 away from the epitaxial growth module. The loading chamber is used to place the substrate on the tray. The unloading chamber is used to receive the substrate or epitaxial wafer taken from the epitaxial growth module.

[0054] The epitaxial growth module 100 includes:

[0055] A housing 10, the housing 10 is cylindrical, and its material can be made of stainless steel.

[0056] A reaction chamber 10a is provided inside the housing 10.

[0057] A spraying component 20 is provided on the top side of the housing 10. The spraying component includes air holes 21, and the air holes 21 are connected to a gas supply system (not shown in the figure) through pipelines.

[0058] A support portion 40 is provided on the bottom side inside the housing 10, which is used to place the tray 30, and the substrate / epitaxial wafer is placed inside the tray 30. An air extraction port 10c is provided on the bottom side of the housing 10, and it is connected to a vacuum pumping device through a pipeline as disclosed in Chinese Patent CN113089090A. In other embodiments, the air extraction port can be provided on the side of the housing as disclosed in Chinese Patent CN113106418A.

[0059] During epitaxial growth, gas is introduced into the reaction chamber 10a based on the spraying component 20, and the direction of gas introduction is perpendicular / roughly perpendicular to the substrate. This epitaxial growth equipment is also called a vertical reaction chamber.

[0060] The support portion 40 is connected to a driving device 60 (such as a driving motor). Based on the driving of the driving device 60, the support portion 40 is driven to rotate, and the rotation of the support portion 40 further causes the substrate / epitaxial wafer to rotate. A first heater 50 is provided inside the support portion. A second heater 70 extending along the axial direction of the epitaxial growth module is provided inside the housing 10. The first heater 50 and the second heater 70 are respectively electrically connected to a matching external power supply (not shown in the figure). The first heater 50 and the second heater 70 adopt resistance-type heaters, such as graphite heaters.

[0061] Next, a method for silicon carbide epitaxial growth using the above-mentioned silicon carbide epitaxial growth equipment (hereinafter referred to as the growth method) will be described.

[0062] The growth method includes a first growth mode, and the first growth mode includes the following steps:

[0063] In-situ etching stage: During the in-situ etching stage, the surface of the substrate is etched in-situ using hydrogen gas.

[0064] Buffer layer growth stage: Using the combination of the first heater and the second heater or the first heater, the temperature in the reaction chamber is heated to the process temperature (the process temperature ranges from 1600°C to 1680°C). Process gas is introduced into the reaction chamber using a spraying component for a duration of T0 to grow a buffer layer with a certain film thickness on the surface of the substrate. The thickness of this buffer layer is less than 5 μm. The process gas includes Si source gas, C source gas, nitrogen source gas, and HCl gas.

[0065] Body layer growth stage: In this stage, using the combination of the first heater and the second heater or the first heater, the temperature in the reaction chamber is maintained at the process temperature. Based on the spraying component, gas is introduced into the reaction chamber for a duration of T1 to grow a body layer with a predetermined film thickness (such as 20 μm, 25 μm, 30 μm) on the surface of the substrate. The gas flow rate introduced during the body layer growth stage is greater than that during the buffer layer growth stage. Preferably, the C / Si ratio of the C source gas to the Si source gas in the gas introduced during the body layer growth stage is the same as that during the buffer layer growth stage (such as 0.7, 0.8, 0.9, 1.0, 1.1, 1.2). It can also be that the C / Si ratio of the C source gas to the Si source gas in the gas introduced during the body layer growth stage is greater than the C / Si ratio introduced during the buffer layer growth stage. In this growth method, the chamber pressure of the reaction chamber is at a low pressure (100 - 300 mbar), and combined with a high H 2 flow rate (100 - 130 slm) to overcome the agglomeration nucleation of the source gas. In other embodiments, the C / Si ratio in the drift layer stage may not be the same as that in the buffer layer stage, and the C / Si ratio is constant within the drift layer stage or the buffer layer stage, so as to avoid possible unstable control at the valve switching points on the gas supply system pipeline during this stage.

[0066] In one embodiment, before the in-situ etching stage, it further includes:

[0067] Based on the manipulator, the substrate (connected to the tray) is placed in the support part of the reaction chamber.

[0068] The reaction chamber is evacuated.

[0069] Based on the spraying component, gas is introduced into the reaction chamber to adjust the pressure in the reaction chamber to 100 mbar - 300 mbar. The introduced argon gas is switched to hydrogen gas and the hydrogen gas flow rate is gradually increased to the target value. The target value is 60 - 140 slm (standard litre per minute). This method uses a low pressure (the pressure in the reaction chamber ranges from 100 - 300 mbar) and a high H 2 flow rate (100 - 130 slm) to overcome the agglomeration nucleation of the source gas.

[0070] Next, taking n-type doping as an example, the growth method proposed in this application will be described. When n-type doping is carried out, the doping gas is nitrogen (when epitaxial growth is carried out during p-type doping, the doping gas can be TMA).

[0071] This growth method includes:

[0072] Based on the manipulator, the substrate (connected to the tray) is placed in the support part of the reaction chamber.

[0073] The reaction chamber is evacuated.

[0074] Based on the spraying component, gas (such as argon) is introduced into the reaction chamber to adjust the pressure in the reaction chamber to be between 100 mbar and 300 mbar.

[0075] The gas introduced into the reaction chamber is switched from argon to hydrogen, and hydrogen is introduced based on the spraying component, and the hydrogen flow rate is gradually increased to the target value, and then the hydrogen flow rate is kept constant. Among them, the target value of the hydrogen flow rate is 60 - 140 slm.

[0076] Using the combination of the first heater and the second heater or the first heater, the temperature of the reaction chamber is gradually increased to the preset temperature (the temperature required for the etching process, such as 1600 - 1660 °C), and the surface of the substrate is in-situ etched with hydrogen, and the etching time is 5 - 10 min.

[0077] Growth of the buffer layer. In this step, trichlorosilane (SiHCl 3 ), ethylene (C 2 H 4 ), and nitrogen (N 2 ) are introduced into the reaction chamber based on the spraying component, and HCl gas is introduced simultaneously. Among them, the C / Si ratio of ethylene to trichlorosilane is between 0.7 and 1.2 to grow a buffer layer with a certain thickness (such as 5 μm).

[0078] Growth stage of the main layer. Based on the spraying component, trichlorosilane (SiHCl 3 ), ethylene (C 2 H 4 ), and nitrogen (N 2 ) are introduced into the reaction chamber to grow a main layer with a predetermined film thickness (such as thicknesses of 20 μm, 25 μm, 30 μm) on the surface of the substrate.

[0079] Based on the spraying component, the gas introduced into the reaction chamber is switched to hydrogen, and the temperature is reduced to the disk-taking temperature (such as 800 °C or below) in a hydrogen atmosphere.

[0080] Based on the manipulator, the substrate (together with the tray) is taken out and placed at a predetermined position (such as the unloading chamber).

[0081] The growth method further includes a second growth mode, which is for the substrate that needs to be re-epitaxially grown due to equipment failure during the growth process of the first growth mode.

[0082] The growth method includes the following steps:

[0083] Identify the stage at which the substrate failure occurs. This step can be obtained through the monitoring module or manually identified. If the failure is not identified, the first growth mode is defaulted for epitaxial growth.

[0084] If it is in the in-situ etching stage or the buffer layer growth stage, enter the first growth mode for epitaxial growth. In this step, if the machine breaks down during the in-situ etching stage, the wafer needs to be taken out for cleaning and then enter the first growth mode for epitaxial growth;

[0085] If the machine breaks down during the buffer layer growth stage, since the thickness of this section is usually less than 5μm, the wafer needs to be taken out for cleaning and then enter the first growth mode for epitaxial growth.

[0086] If it is in the main layer growth stage, enter the second growth mode for epitaxial growth.

[0087] The second growth mode includes the following steps:

[0088] Based on the manipulator, place the substrate (connected to the tray) into the support part of the reaction chamber;

[0089] Vacuum the reaction chamber

[0090] And based on the spraying component, introduce gas into the reaction chamber to adjust the pressure in the reaction chamber to

[0091] 100 mbar - 300 mbar;

[0092] Based on the spraying component, switch the introduced argon gas to hydrogen gas and gradually increase the hydrogen gas flow rate to the target value. The target value is between 70 - 150 slm (standard litre per minute), and a small amount of HCL gas (H 2 / HCL mixture) is introduced, where hydrogen H 2 accounts for 90% - 99%, and the remaining is HCL gas;

[0093] Use the combination of the first heater and the second heater or the first heater to gradually increase the temperature in the reaction chamber to the process temperature (the process temperature is between 1600°C and 1680°C, such as 1650°C, 1655°C, 1660°C,

[0094] 1670°C, 1680°C), and use H 2The mixture of / HCL is used to desorb (i.e., etch) the substrate surface, and the surface interface is cleaned by high-temperature etching and maintained at the process temperature for a preset time (such as 2 - 10 min, preferably 3 - 6 min, such as 3 min, 4 min). Then, it enters the buffer layer growth stage (with parameter conditions the same as those in the first growth mode) and the main layer growth stage. The parameters of the ventilation gas and the temperature parameters in this stage are the same as those in the first growth mode, and the duration of this stage is T2. Preferably, this T2 is the time of T1 - T3 (T3 is the growth duration when the machine breaks down, and this duration can be obtained through the monitoring module). Preferably, this T2 is T1 - T3 + T4 (T4 is a compensation coefficient, which is between 5 - 50 s or between 10 - 40 s or between 10 - 30 s. This T4 time is used to compensate for the baking loss). The growth ends.

[0095] Based on the spraying component, the gas introduced into the reaction chamber is switched to hydrogen, and the temperature is reduced to the disk-taking temperature (such as 800 °C or below) in the hydrogen atmosphere.

[0096] Based on the manipulator, the substrate (together with the tray) is taken out and placed at a predetermined position (such as the unloading chamber). In this embodiment, the substrate that needs to be re-epitaxially grown due to equipment failure and downtime needs to be cleaned before re-growth (also called continuous growth). The concentration and thickness uniformity of the epitaxial wafer obtained by this method are comparable to those of the epitaxial wafer grown in the first growth mode. In this way, the scrap loss of the substrate is reduced, the cost is reduced, and the economic benefit is improved. In one embodiment, the in-wafer Killer density (the total density of MP, Carrot, Downfall, and Triangle) of the continuously grown epitaxial wafer is less than 0.3 pieces / cm2, the surface of the epitaxial layer is smooth, and the surface roughness is 0.163 nm.

[0097] Although the present invention has been described herein with reference to specific embodiments, it should be understood that these embodiments are merely examples of the principles and applications of the present invention. Therefore, it should be understood that many modifications can be made to the exemplary embodiments, and other arrangements can be designed, as long as they do not deviate from the spirit and scope of the present invention as defined by the appended claims. It should be understood that the different dependent claims and the features described herein can be combined in a different manner than described in the original claims. It should also be understood that the features described in connection with a single embodiment can be used in other described embodiments.

Claims

1. A method for epitaxial growth of silicon carbide, characterized in that: The growth method comprises the following steps: Identify the stage during substrate epitaxial growth when the failure occurs, If it is in the in-situ etching stage or the buffer layer growth stage, it enters the first growth mode for epitaxial growth. If it is in the main layer growth stage, it enters the second growth mode for epitaxial growth.

2. The method for epitaxial growth of silicon carbide according to claim 1, wherein: The stage at which the substrate failure occurs is identified includes: The monitoring module is used to obtain the stage at which the failure occurs during the epitaxial growth of the substrate, or the stage input based on the human-machine interface. If no fault is identified, the first growth mode is used by default to perform epitaxial growth.

3. The method for epitaxial growth of silicon carbide according to claim 1, characterized in that: The second growth mode comprises the following steps: A support part for placing the substrate into the reaction chamber based on a robot; Evacuate the reaction chamber; The pressure in the reaction chamber is adjusted to a preset pressure by introducing gas into the reaction chamber based on the spray component; Based on the spray component, the argon gas introduced is switched to hydrogen and a small amount of HCL gas is introduced, and the hydrogen flow rate is gradually increased to a target value, the target value is between 70-150slm, and H2 accounts for 90% to 99% of the introduced mixed gas, and the rest is HCL gas; The temperature in the reaction chamber is gradually raised to a process temperature by using a combination of the first heater and the second heater or the first heater. The process temperature is between 1600° C. and 1680° C., and a mixed gas of H2 and HCL is used to perform a high-temperature etching and cleaning process on the surface of the substrate, and the process temperature is maintained for a preset time. In the buffer layer growth stage, the temperature in the reaction chamber is heated to the process temperature by using a combination of the first heater and the second heater or the first heater, and a process gas is introduced into the reaction chamber by using a spray component for a duration of T0 to grow a buffer layer of a certain film thickness on the substrate surface. During the main layer growth stage, a combination of the first heater and the second heater or the first heater is used to maintain the temperature in the reaction chamber to the process temperature, and gas is introduced into the reaction chamber based on a spray component for a duration of T2 to complete the growth of the main layer grown on the substrate surface.

4. The method for epitaxial growth of silicon carbide according to claim 3, characterized in that: The duration T2 satisfies: T2=T1-T3, T1 is the duration in the first growth mode, T3 is the growth duration during downtime, or T2=T1-T3+T4, T4 is a compensation coefficient, which is between 5 and 50 seconds.

5. The method for epitaxial growth of silicon carbide according to claim 3, characterized in that: After the growth is completed, the following steps are also included: Based on the spray component, the gas introduced into the reaction chamber is switched to hydrogen, and the temperature is lowered to the plate removal temperature in the hydrogen atmosphere. The substrate is taken out by a robot and placed in a predetermined position.

6. The method for epitaxial growth of silicon carbide according to claim 5, characterized in that: The plate taking temperature is less than or equal to 800°C.

7. The method for epitaxial growth of silicon carbide according to claim 1, characterized in that: If the in-situ etching stage or the buffer layer growth stage is in progress, the substrate needs to be cleaned and then enter the first growth mode for epitaxial growth.

8. The method for epitaxial growth of silicon carbide according to claim 1, wherein: The first growth mode comprises the following steps: In the in-situ etching stage, hydrogen is used to in-situ etch the surface of the substrate. In the buffer layer growth stage, the temperature in the reaction chamber is heated to the process temperature by using a combination of the first heater and the second heater or the first heater, and a process gas is introduced into the reaction chamber by using a spray component for a duration of T0 to grow a buffer layer of a certain film thickness on the substrate surface; During the main layer growth stage, a combination of the first heater and the second heater or the first heater is used to maintain the temperature in the reaction chamber to the process temperature, and gas is introduced into the reaction chamber based on a spray component for a period of T1 to grow a main layer of a predetermined film thickness on the substrate surface.

9. A silicon carbide epitaxial growth device, characterized in that: include: At least one epitaxial growth module, a transmission module, a control module and a monitoring module, The transmission module is arranged at one side of the epitaxial growth module and has a transmission device therein for placing a substrate into the epitaxial growth module or taking out a grown epitaxial wafer from the epitaxial growth module; The control module controls the operation of the epitaxial growth module, the transmission module and the gas supply module based on the instructions; The monitoring module is electrically connected to the control module, and is used to monitor the operating status of the epitaxial growth module, the transmission module, and the gas supply module. The operating status at least includes the etching stage, the buffer growth stage, the main layer growth stage, and the duration of the main layer growth stage of the epitaxial growth. The silicon carbide epitaxial growth device performs the silicon carbide epitaxial growth method according to any one of claims 1 to 8 when in operation.

10. The silicon carbide epitaxial growth device according to claim 9, characterized in that: It also includes a human-machine interface, which is electrically connected to the control module, and the parameters of the epitaxial growth are adjusted through the human-machine interface.

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