Simulation modeling method and system for real-time model of silicon carbide IGBT (Insulated Gate Bipolar Translator) module

Abstract

The invention discloses a simulation modeling method and system for a real-time model of a silicon carbide IGBT (Insulated Gate Bipolar Translator) module, relates to the technical field of power electronics, is used for the silicon carbide IGBT module, and can quickly and accurately provide key information for modeling through a targeted data acquisition mode based on acquired module characteristic parameters and oscillation characteristic parameters. The method greatly reduces unnecessary calculation amount, remarkably improves modeling efficiency, carries out real-time oscillation simulation by using the obtained oscillation characteristic parameters and module characteristic parameters based on the constructed initial real-time model, can more accurately simulate the switching instant oscillation characteristics of the silicon carbide IGBT module in actual work, and improves the simulation accuracy of the silicon carbide IGBT module. By comparing the oscillation simulation data with the preset standard working condition data, if the two data are consistent, the initial real-time model is taken as the target real-time model, so that the model accuracy is ensured.

Description

Technical Field

[0001] The present invention relates to the field of power electronics technology, and in particular, to a simulation modeling method and system for a real-time model of a silicon carbide IGBT module. Background Art

[0002] With the development of materials science, silicon carbide has gradually come into the field of view of power semiconductors. It has characteristics such as low device capacitance, small influence of switching losses on temperature, extremely low reverse recovery effect, and conduction without threshold voltage. The advantages are reflected in high efficiency, low cooling requirements, high operating frequency, and increased power density.

[0003] Currently, in the field of power electronics, traditional IGBT power electronic switches have certain limitations. With the wide application of IGBTs made of silicon carbide materials, compared with traditional IGBTs, the parasitic parameters in the silicon carbide IGBT module will be greatly reduced, and this characteristic improves the feasibility of the switching frequency. However, the silicon carbide IGBT module also brings new characteristics of oscillation during the opening and closing instant. If this oscillation characteristic is simulated and modeled using traditional physical methods, it will greatly increase the simulation computation amount, resulting in a problem of low simulation modeling efficiency. Summary of the Invention

[0004] The present invention provides a simulation modeling method and system for a real-time model of a silicon carbide IGBT module, which solves the technical problem of how to improve the simulation modeling efficiency of a silicon carbide IGBT module.

[0005] A simulation modeling method for a real-time model of a silicon carbide IGBT module provided in the first aspect of the present invention includes:

[0006] In response to a modeling request for a target IGBT module, obtaining the module characteristic parameters of the target IGBT module through a preset device data table;

[0007] By performing a switching operation on a preset module equivalent circuit, obtaining the oscillation characteristic parameters of the oscillation stage during the switching instant of the target IGBT module;

[0008] Constructing an initial real-time model, and inputting the oscillation characteristic parameters and the module characteristic parameters into the initial real-time model for real-time oscillation simulation, and outputting oscillation simulation data;

[0009] Comparing the oscillation simulation data with preset standard operating condition data;

[0010] If the oscillation simulation data is consistent with the preset standard operating condition data, then taking the initial real-time model as the target real-time model of the target IGBT module.

[0011] Optionally, it further includes:

[0012] If the oscillation simulation data is inconsistent with the preset standard operating condition data, jump to the step of obtaining the oscillation characteristic parameters of the oscillation stage at the moment of switching of the target IGBT module by performing switching operations on the equivalent circuit of the preset module.

[0013] Optionally, the oscillation characteristic parameters include a first oscillation characteristic parameter and a second oscillation characteristic parameter, the initial real-time model includes an on-moment oscillation circuit model and an off-moment oscillation circuit model, and the step of inputting the oscillation characteristic parameters and the module characteristic parameters into the initial real-time model for real-time oscillation simulation and outputting oscillation simulation data includes:

[0014] Input the first oscillation characteristic parameter and the module characteristic parameter into the on-moment oscillation circuit model for real-time oscillation simulation, and output first oscillation simulation data;

[0015] Input the second oscillation characteristic parameter and the module characteristic parameter into the off-moment oscillation circuit model for real-time oscillation simulation, and output second oscillation simulation data;

[0016] The oscillation simulation data includes the first oscillation simulation data and the second oscillation simulation data.

[0017] Optionally, the first oscillation characteristic parameter includes first gate resistance data, first parasitic inductance data, and first parasitic capacitance data, and the step of inputting the first oscillation characteristic parameter and the module characteristic parameter into the on-moment oscillation circuit model for real-time oscillation simulation and outputting first oscillation simulation data includes:

[0018] Input the first gate resistance data into a first preset total gate resistance function to determine first total equivalent resistance simulation data;

[0019] Input the first parasitic inductance data into a first preset total parasitic inductance function to determine first total parasitic inductance simulation data;

[0020] Input the first parasitic capacitance data into a first preset total parasitic capacitance function to determine first total parasitic capacitance simulation data;

[0021] Use the first total parasitic inductance simulation data, the first total parasitic capacitance simulation data, and the module characteristic parameters to determine first maximum reverse current simulation data;

[0022] The first oscillation simulation data includes the first total equivalent resistance simulation data, the first total parasitic inductance simulation data, the first total parasitic capacitance simulation data, and the first maximum reverse current simulation data.

[0023] Optionally, the second oscillation characteristic parameter includes second gate resistance data, second parasitic inductance data, and second parasitic capacitance data. The step of inputting the second oscillation characteristic parameter and the module characteristic parameter into the turn-off instant oscillation circuit model for real-time oscillation simulation and outputting second oscillation simulation data includes:

[0024] Using the second gate resistance data, the second parasitic inductance data, the second parasitic capacitance data, and the module characteristic parameter to determine second-order circuit simulation data;

[0025] Using the module characteristic parameter to determine first-order circuit simulation data;

[0026] The second oscillation simulation data includes the first-order circuit simulation data and the second-order circuit simulation data.

[0027] Optionally, the step of using the second gate resistance data, the second parasitic inductance data, the second parasitic capacitance data, and the module characteristic parameter to determine second-order circuit simulation data includes:

[0028] Inputting the second gate resistance data into a second preset total gate resistance function to determine second total equivalent resistance simulation data;

[0029] Inputting the second parasitic inductance data into a second preset total parasitic inductance function to determine second total parasitic inductance simulation data;

[0030] Inputting the second parasitic capacitance data into a second preset total parasitic capacitance function to determine second total parasitic capacitance simulation data;

[0031] Using the second total parasitic inductance simulation data, the second total parasitic capacitance simulation data, and the module characteristic parameter to determine second maximum reverse current simulation data;

[0032] The second-order circuit simulation data includes the second total equivalent resistance simulation data, the second total parasitic inductance simulation data, the second total parasitic capacitance simulation data, and the second maximum reverse current simulation data.

[0033] A simulation modeling system for a silicon carbide IGBT module real-time model provided in the second aspect of the present invention includes:

[0034] A response module, configured to respond to a modeling request for a target IGBT module, and obtain the module characteristic parameter of the target IGBT module through a preset device data table;

[0035] A switch operation module, configured to obtain the oscillation characteristic parameter of the turn-off instant oscillation stage of the target IGBT module by performing a switch operation on a preset module equivalent circuit;

[0036] An oscillation simulation module, configured to construct an initial real-time model, and input the oscillation characteristic parameters and the module characteristic parameters into the initial real-time model for real-time oscillation simulation, and output oscillation simulation data;

[0037] A data comparison module, configured to compare the oscillation simulation data with preset standard working condition data;

[0038] A model output module, configured to, if the oscillation simulation data is consistent with the preset standard working condition data, use the initial real-time model as the target real-time model of the target IGBT module.

[0039] An electronic device provided in the third aspect of the present invention includes a memory and a processor. A computer program is stored in the memory. When the computer program is executed by the processor, the processor executes the steps of the simulation modeling method of the real-time model of the silicon carbide IGBT module as described in any one of the above.

[0040] A computer-readable storage medium provided in the fourth aspect of the present invention has a computer program stored thereon. When the computer program is executed, it implements the simulation modeling method of the real-time model of the silicon carbide IGBT module as described in any one of the above.

[0041] A computer program product provided in the fifth aspect of the present invention includes a computer program stored on a non-transitory computer-readable storage medium. The computer program includes program instructions. When the program instructions are executed by a computer, the computer executes the simulation modeling method of the real-time model of the silicon carbide IGBT module as described in any one of the above.

[0042] It can be seen from the above technical solutions that the present invention has the following advantages:

[0043] The present invention is applied to a silicon carbide IGBT module. Based on the obtained module characteristic parameters and oscillation characteristic parameters, through a targeted data acquisition method, it can quickly and accurately provide key information for modeling, greatly reducing unnecessary computational effort and significantly improving the modeling efficiency. Based on the constructed initial real-time model, using the obtained oscillation characteristic parameters and module characteristic parameters for real-time oscillation simulation, it can more accurately simulate the switching instant oscillation characteristics of the silicon carbide IGBT module in actual operation. By comparing the oscillation simulation data with the preset standard working condition data, if the two are consistent, the initial real-time model is used as the target real-time model to ensure the accuracy of the model. Description of the Drawings

[0044] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.

[0045] Figure 1 It is a flowchart of the steps of a simulation modeling method for a real-time model of a silicon carbide IGBT module provided by an embodiment of the present invention;

[0046] Figure 2 It is a schematic diagram of the preset module equivalent circuit of the present invention;

[0047] Figure 3 It is a schematic diagram of the oscillation stage when the first silicon carbide IGBT module is turned on and the second silicon carbide IGBT module is turned off in the present invention;

[0048] Figure 4 It is a schematic diagram of the oscillation stage when the first silicon carbide IGBT module is turned off and the second silicon carbide IGBT module is turned on in the present invention;

[0049] Figure 5 It is a schematic diagram of the on-instant oscillation circuit model of the present invention;

[0050] Figure 6 It is a schematic diagram of the off-instant oscillation circuit model of the present invention;

[0051] Figure 7 It is a waveform schematic diagram of the turn-on test silicon carbide IGBT module and the actual working condition of the present invention;

[0052] Figure 8 It is a waveform schematic diagram of the turn-off test silicon carbide IGBT module and the actual working condition of the present invention;

[0053] Figure 9 It is a structural block diagram of a simulation modeling system for a real-time model of a silicon carbide IGBT module provided by an embodiment of the present invention;

[0054] Figure 10 It is a structural block diagram of a computer device provided by an embodiment of the present invention. Detailed implementation manners

[0055] The embodiments of the present invention provide a simulation modeling method and system for a real-time model of a silicon carbide IGBT module, which are used to solve the technical problem of how to improve the simulation modeling efficiency of a silicon carbide IGBT module.

[0056] In order to make the objectives, features, and advantages of the present invention more obvious and understandable, the following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the embodiments described below are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0057] IGBT (Insulated Gate Bipolar Transistor), whose full Chinese name is insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of BJT (Bipolar Junction Transistor) and MOS (Metal-Oxide-Semiconductor Field-Effect Transistor). Similar to the chip technology (CPU) in microelectronics technology, IGBT chip technology is the "heart" and "brain" in the power electronics industry. It can control and provide electrical energy conversion for high-power electrical equipment, effectively improving the energy utilization efficiency, automation, and intelligent level of the equipment. IGBT devices, modules, components, and system devices composed of IGBT chips are widely used in household appliances such as air conditioners and washing machines, as well as high-end industries such as rail transit, smart grid, aerospace, ship drive, new energy, and electric vehicles. IGBTs with high power ratings are particularly crucial.

[0058] The IGBT model involves the interaction of multiple physical fields such as electricity, magnetism, heat, and force. Multi-physical field modeling and analysis are important tools for studying its thermal management, electromagnetic compatibility, and mechanical fatigue. However, for ordinary users, they can only obtain the data sheet of the IGBT device provided by the manufacturer, and the data sheet does not provide very specific data such as specific material parameters and doping concentrations, which causes great confusion and difficulties for users to use multi-physical field modeling tools. If users can directly extract characterization parameters such as gate turn-on and turn-off from the data sheet and then directly establish a behavioral-level modeling method on this basis, it will be able to meet the modeling requirements of most users for the turn-on and turn-off conditions of this switching component. At the same time, accelerating the calculation of such models and embedding them into the hardware-in-the-loop scenario will greatly improve the generality and practicality of such models.

[0059] The following circuit models are adopted in traditional IGBT circuit simulation: 1) Analytical model; 2) Behavioral model; 3) Numerical model; 4) Hybrid mode. The analytical model is based on device physics principles and establishes a model that can accurately describe the steady-state and transient operation of the device. The behavioral model provides a good prediction of device performance while ignoring detailed physical characteristics. The numerical model can simulate the electrical, thermal, and optical characteristics of the device using the finite element method without manufacturing a physical device, but its calculation is very time-consuming. The hybrid model combines the physical interpretability of the analytical model, the low computational consumption of the behavioral model, and the precise geometric characteristics of the numerical model. Generally speaking, the behavioral model has the best real-time performance and requires the least computational resources, while the other models require a large amount of resources and execution time.

[0060] The behavioral model only needs the device data sheet to achieve device-level rapid modeling and real-time simulation. However, the analytical model, numerical model, and hybrid model require specific dimensions and manufacturing descriptions to extract dedicated physical parameters. Generally speaking, the device data sheet does not provide such detailed manufacturer design specifications, which makes the modeling work of general devices very difficult. Some physical parameters inside the power semiconductor cannot be measured or estimated unless there is extensive cooperation with the semiconductor manufacturer. High-order nonlinear equations, convergence problems, and sensitivity to initial conditions, which may lead to incomplete or inaccurate simulations, are also some of the main challenges of these three types of models. The choice of modeling method depends on the required accuracy, computational resources, convergence properties, validity range, and time consumption of the computational program. These three types of models, namely the analytical model, numerical model, and hybrid model, consume a large amount of computational resources and are not suitable for real-time simulation scenarios. Therefore, it is feasible and recommended to choose the behavioral model with acceptable accuracy and low computational resource consumption for rapid modeling and real-time simulation of IGBTs.

[0061] Due to the use of silicon carbide materials, the parasitic parameters in the power electronic switch will be greatly reduced, improving the feasibility of the switching frequency. However, it also brings new oscillation characteristics during the on-off instant. If the traditional physical method is used for modeling and calculation, the computational workload will increase significantly. Considering the actual device physical characteristics, a simplified behavioral model should be proposed to greatly reduce the model's computational workload.

[0062] Therefore, the present invention proposes a fast modeling method for a real-time model of an IGBT module based on silicon carbide materials. The non-linear iterative switching oscillation operation with the longest time consumption is simplified into an RLC circuit model or an RLC+RC circuit model through physically resolvable circuit simplification, greatly improving the operation speed of the model, achieving real-time operation effects, improving the simulation modeling efficiency, solving the requirements for behavioral-level modeling and real-time simulation in the absence of semiconductor physical parameters, realizing the hardware-in-the-loop test requirements for the new characteristics of semiconductor oscillation under high-frequency breaking, and providing an important scientific research tool for scenarios such as forward-looking device-level selection and massive later debugging in the construction of large-scale new power systems.

[0063] Please refer to Figure 1 , Figure 1 which is a flowchart of the steps of a simulation modeling method for a real-time model of a silicon carbide IGBT module provided by an embodiment of the present invention.

[0064] A simulation modeling method for a real-time model of a silicon carbide IGBT module provided by the present invention includes:

[0065] Step 101, in response to a modeling request for a target IGBT module, obtain the module characteristic parameters of the target IGBT module through a preset device data table.

[0066] The target IGBT module refers to a silicon carbide IGBT module.

[0067] The modeling request refers to a request instruction for simulating and modeling the target IGBT module.

[0068] The preset device data table refers to a data set obtained in advance for recording devices and describing various detailed information and characteristic parameters of the target IGBT module.

[0069] The module characteristic parameters refer to a series of data sets used to describe and characterize the performance and characteristics of the target IGBT module in multiple aspects such as electrical, thermal, mechanical, and reliability.

[0070] In an embodiment of the present invention, in response to receiving a request instruction for simulating and modeling the target IGBT module, retrieve the preset device data table and obtain the module characteristic parameters of the target IGBT module for real-time oscillation simulation operation.

[0071] Step 102, obtain the oscillation characteristic parameters of the target IGBT module during the oscillation stage at the moment of switching by performing a switching operation on a preset module equivalent circuit.

[0072] The oscillation characteristic parameters refer to the real-time data recorded during the oscillation stage of each component in the preset module equivalent circuit during the switching operation and are used for real-time oscillation simulation operation.

[0073] The preset module equivalent circuit refers to a pre-constructed equivalent test circuit for the target IGBT module. By performing switching operations on the preset module equivalent circuit, the oscillation characteristic parameters of the target IGBT module during the oscillation stage at the moment of switching are obtained.

[0074] Please refer to Figure 2 , the preset module equivalent circuit includes a first silicon carbide IGBT module, a second silicon carbide IGBT module, an external capacitor, and the parasitic inductance of the module circuit;

[0075] Among them, the cable line of the external capacitor doped with parasitic inductance is equivalent to a parasitic inductance, that is, the parasitic inductance of the module circuit.

[0076] It should be noted that the preset module equivalent circuit is applied to the ultra-high voltage flexible DC MMC sub-module circuit.

[0077] The following is the component connection relationship of the preset module equivalent circuit:

[0078] The first silicon carbide IGBT module ① includes a first gate, a first external gate resistance, a first internal gate resistance, a first gate-collector parasitic capacitance C GC , a first collector-emitter parasitic capacitance C CE , a first gate-emitter parasitic capacitance C GE , a first emitter, a first emitter parasitic inductance, a first parasitic resistance, a first collector parasitic inductance, a first collector, a first diode, and a first capacitor;

[0079] The first gate is connected to one end of the first external gate resistance, and the other end of the first external gate resistance is connected to the first end of the first internal gate resistance;

[0080] The second end of the first internal gate resistance is connected to one end of the first gate-collector parasitic capacitance C GC ;

[0081] The other end of the first gate-collector parasitic capacitance C GC is connected to a first parasitic resistance, a first capacitor, a first collector-emitter parasitic capacitance C CE and a first diode;

[0082] One end of the first parasitic resistance far from the first gate-collector parasitic capacitance C GC is connected to one end of the first collector parasitic inductance;

[0083] The other end of the first collector parasitic inductance is connected to one end of the first collector;

[0084] The third end of the first internal gate resistance is connected to one end of the first gate-emitter parasitic capacitance C GE ;

[0085] The parasitic capacitance C of the first gate-emitter GE The other end of which is connected to a first emitter parasitic inductance, a first capacitor, the parasitic capacitance C of the first collector-emitter CE and a first diode;

[0086] The first emitter parasitic inductance is away from the parasitic capacitance C of the first gate-emitter GE One end of which is connected to the first emitter;

[0087] The first emitter is connected to the second collector in the second silicon carbide IGBT module.

[0088] The second silicon carbide IGBT module ② includes a second gate, an external resistance of the second gate, an internal resistance of the second gate, the parasitic capacitance C of the second gate-collector GC the parasitic capacitance C of the second collector-emitter CE the parasitic capacitance C of the second gate-emitter GE a second emitter, a second emitter parasitic inductance, a second parasitic resistance, a second collector parasitic inductance, a second collector, a second diode and a second capacitor;

[0089] The second gate is connected to one end of the external resistance of the second gate, and the other end of the external resistance of the second gate is connected to the second end of the internal resistance of the second gate;

[0090] The second end of the internal resistance of the second gate is connected to one end of the parasitic capacitance C of the second gate-collector GC ;

[0091] The other end of the parasitic capacitance C of the second gate-collector GC is connected to a second parasitic resistance, a second capacitor, the parasitic capacitance C of the second collector-emitter CE and a second diode;

[0092] The second parasitic resistance is away from the parasitic capacitance C of the second gate-collector GC One end of which is connected to one end of the second collector parasitic inductance;

[0093] The other end of the second collector parasitic inductance is connected to one end of the second collector;

[0094] The third end of the internal resistance of the second gate is connected to one end of the parasitic capacitance C of the second gate-emitter GE ;

[0095] The other end of the parasitic capacitance C of the second gate-emitter GE is connected to a second emitter parasitic inductance, a second capacitor, the parasitic capacitance C of the second collector-emitter CE and a second diode;

[0096] The parasitic inductance of the second emitter is far from the parasitic capacitance C of the second gate-emitter. GE One end of it is connected to the second emitter.

[0097] The parasitic inductance of the second emitter is far from the parasitic capacitance C of the second gate-emitter. GE One end of it is also connected to one end of an external capacitor.

[0098] The other end of the external capacitor is connected to one end of the parasitic inductance of the module circuit.

[0099] The other end of the parasitic inductance of the module circuit is connected to the first collector.

[0100] In the embodiment of the present invention, a switching operation is performed on the preset module equivalent circuit through a controllable current source to simulate the current change in the linear rising or falling stage at the moment of switching, that is, the first silicon carbide IGBT module ① and the second silicon carbide IGBT module ② are switched respectively.

[0101] At the moment of turning on: Measure the linear rising stage of the current using the preset module equivalent circuit. When the switch of the first silicon carbide IGBT module ① is turned on, the second silicon carbide IGBT module ② is turned off. As Figure 3 shown, at the moment of ① on and ② off, there is a linear rising stage first and then an oscillation stage. The linear rising stage uses a controllable current source to control the current rise, and the rise time can be extracted from the preset device data sheet.

[0102] At the moment of turning off: Measure the linear falling stage of the current using the preset module equivalent circuit. When the switch of the second silicon carbide IGBT module ② is turned on, the first silicon carbide IGBT module ① is turned off. Through the switching operation, as Figure 4 shown, at the moment of ① off and ② on, there is a linear falling stage first and then an oscillation stage. The linear falling stage also uses a controllable current source to control the current fall, and the fall time can also be extracted from the device data sheet.

[0103] Through the above switching operation, the oscillation characteristic parameters of each component in the oscillation stage at the moment of switching of the target IGBT module are obtained.

[0104] Step 103: Construct an initial real-time model, and input the oscillation characteristic parameters and module characteristic parameters into the initial real-time model for real-time oscillation simulation, and output oscillation simulation data.

[0105] In the embodiment of the present invention, an initial real-time model is constructed. The initial real-time model includes an oscillation circuit model at the moment of turning on and an oscillation circuit model at the moment of turning off.

[0106] It is worth mentioning that the on - instant oscillation circuit model in the simplified circuit form includes a first preset total gate resistance function, a first preset parasitic total inductance function, a first preset parasitic total capacitance function, and a formula for calculating the first maximum reverse current simulation data; the off - instant oscillation circuit model in the simplified circuit form includes a second preset total gate resistance function, a second preset parasitic total inductance function, a second preset parasitic total capacitance function, a formula for calculating the second maximum reverse current simulation data, and a formula for calculating the first - order circuit simulation data; through the oscillation circuit model in the above - mentioned simplified circuit form, oscillation simulation data can be quickly obtained through simulation operations. Compared with the traditional physical method for modeling, the amount of calculation is greatly reduced, and the modeling efficiency is improved.

[0107] Please refer to Figure 5 , at the on - instant and off - instant, the on - instant oscillation circuit form is an RLC circuit form, and the output is the right - hand current; among them, the RLC circuit is composed of a first total equivalent resistance, a first total parasitic inductance, and a first total parasitic capacitance in series, and the right - hand output is the first maximum reverse current.

[0108] Please refer to Figure 6 , at the off - instant and on - instant, the off - instant oscillation circuit form is an RLC circuit superimposed on an RC circuit, and the output is the right - hand current; among them, the RLC circuit is composed of a second total equivalent resistance, a second total parasitic inductance, and a second total parasitic capacitance in series, and the right - hand output is the second maximum reverse current, and the RC circuit is composed of a first - order total equivalent resistance and a first - order total parasitic capacitance in series, and the right - hand output is the first - order maximum reverse current.

[0109] In the embodiment of the present invention, oscillation characteristic parameters and module characteristic parameters are input into the parameter operation module for operation, and oscillation simulation data is output, where the oscillation simulation data includes first oscillation simulation data and second oscillation simulation data.

[0110] The first oscillation simulation data refers to the oscillation simulation data output by taking the oscillation characteristic parameters and module characteristic parameters at the on - instant and off - instant as the input of the initial real - time model through real - time oscillation simulation, including the first total equivalent resistance, the first total parasitic inductance, the first total parasitic capacitance, and the first maximum reverse current.

[0111] The second oscillation simulation data refers to the oscillation simulation data output by taking the oscillation characteristic parameters and module characteristic parameters at the off - instant and on - instant as the input of the initial real - time model through real - time oscillation simulation, including first - order simulation data and second - order simulation data. The first - order simulation data includes the first - order total equivalent resistance, the first - order total parasitic capacitance, and the first - order maximum reverse current, and the second - order simulation data includes the second total equivalent resistance, the second total parasitic inductance, the second total parasitic capacitance, and the second maximum reverse current.

[0112] Further, the oscillation characteristic parameters include a first oscillation characteristic parameter and a second oscillation characteristic parameter, the oscillation simulation data includes a first oscillation simulation data and a second oscillation simulation data, the initial real-time model includes an on-instant oscillation circuit model and an off-instant oscillation circuit model, and step 103 may include the following sub-steps:

[0113] S31. Input the on-instant oscillation circuit model with the first oscillation characteristic parameter and the module characteristic parameter for real-time oscillation simulation, and output the first oscillation simulation data.

[0114] Further, the first oscillation characteristic parameter includes first gate resistance data, first parasitic inductance data, and first parasitic capacitance data, the first oscillation simulation data includes first total equivalent resistance simulation data, first total parasitic inductance simulation data, first total parasitic capacitance simulation data, and first maximum reverse current simulation data, and S31 may include the following sub-steps:

[0115] S311. Input the first gate resistance data into the first preset gate total resistance function to determine the first total equivalent resistance simulation data.

[0116] The first preset gate total resistance function is specifically:

[0117]

[0118] In the formula, represents the first total equivalent resistance simulation data, specifically the first total equivalent resistance, represents the first external gate resistance, represents the first internal gate resistance.

[0119] In the embodiment of the present invention, in the on and off stages, the first gate resistance data includes the first external gate resistance and the first internal gate resistance, and the first external gate resistance and the first internal gate resistance in the first silicon carbide IGBT module are input into the first preset gate total resistance function for calculation to obtain the first total equivalent resistance simulation data.

[0120] S312. Input the first parasitic inductance data into the first preset parasitic total inductance function to determine the first total parasitic inductance simulation data.

[0121] The first preset parasitic total inductance function is specifically:

[0122]

[0123] In the formula, represents the first total parasitic inductance simulation data, specifically the first total parasitic inductance, represents the first collector parasitic inductance, represents the second collector parasitic inductance, represents the first emitter parasitic inductance, Represents the parasitic inductance of the module circuit.

[0124] In the embodiments of the present invention, during the ① on ② off stage, the first parasitic inductance data includes the first collector parasitic inductance, the second collector parasitic inductance, the first emitter parasitic inductance, and the parasitic inductance of the module circuit. The first parasitic inductance data is input into the first preset total parasitic inductance function for calculation to obtain the first total parasitic inductance simulation data.

[0125] S313. Input the first parasitic capacitance data into the first preset total parasitic capacitance function to determine the first total parasitic capacitance simulation data.

[0126] The first preset total parasitic capacitance function is specifically:

[0127]

[0128] In the formula, represents the first total parasitic capacitance simulation data, specifically the first total parasitic capacitance, represents the first gate-collector parasitic capacitance, represents the parasitic capacitance of the first collector-emitter.

[0129] In the embodiments of the present invention, during the ① on ② off stage, the first parasitic capacitance data includes the first gate-collector parasitic capacitance and the parasitic capacitance of the first collector-emitter. The first parasitic capacitance data is input into the first preset total parasitic capacitance function for calculation to obtain the first total parasitic capacitance simulation data.

[0130] S314. Determine the first maximum reverse current simulation data by using the first total parasitic inductance simulation data, the first total parasitic capacitance simulation data, and the module characteristic parameters.

[0131] Packaging S314 into the form of a formula, specifically:

[0132]

[0133]

[0134]

[0135] In the formula, represents the first maximum reverse current simulation data, specifically the first maximum reverse current, represents the reverse recovery charge, represents the period, represents the angular velocity.

[0136] In the embodiment of the present invention, the angular velocity is calculated using the first total parasitic inductance simulation data and the first total parasitic capacitance simulation data, the period is calculated using the angular velocity, the module characteristic parameter includes the reverse recovery charge, and the first maximum reverse current simulation data can be calculated using the reverse recovery charge and the angular velocity, or the first maximum reverse current simulation data can also be calculated using the reverse recovery charge and the period.

[0137] S32. Use the second oscillation characteristic parameter and the module characteristic parameter to input the turn-off instant oscillation circuit model for real-time oscillation simulation, and output the second oscillation simulation data.

[0138] Further, the second oscillation characteristic parameter includes the second gate resistance data, the second parasitic inductance data, and the second parasitic capacitance data, the second oscillation simulation data includes the first-order circuit simulation data and the second-order circuit simulation data, and S32 may include the following sub-steps:

[0139] S321. Use the second gate resistance data, the second parasitic inductance data, the second parasitic capacitance data, and the module characteristic parameter to determine the second-order circuit simulation data.

[0140] Further, the second-order circuit simulation data includes the second total equivalent resistance simulation data, the second total parasitic inductance simulation data, the second total parasitic capacitance simulation data, and the second maximum reverse current simulation data, and S321 may include the following sub-steps:

[0141] S3211. Input the second gate resistance data into the second preset total gate resistance function to determine the second total equivalent resistance simulation data.

[0142] The second preset total gate resistance function is specifically:

[0143]

[0144] In the formula, represents the second total equivalent resistance simulation data, specifically the second total equivalent resistance, represents the second external gate resistance, represents the second internal gate resistance.

[0145] In the embodiment of the present invention, in the turn-off and then turn-on stage, the second gate resistance data includes the second external gate resistance and the second internal gate resistance, and the second external gate resistance and the second internal gate resistance in the second silicon carbide IGBT module ② are used to input the second preset total gate resistance function for calculation to obtain the second total equivalent resistance simulation data.

[0146] S3212. Input the second parasitic inductance data into the second preset total parasitic inductance function to determine the second total parasitic inductance simulation data.

[0147] The second preset total parasitic inductance function is specifically:

[0148]

[0149] Wherein, represents the second total parasitic inductance simulation data, specifically the second total parasitic inductance, represents the first collector parasitic inductance, represents the second collector parasitic inductance, represents the second emitter parasitic inductance, represents the module circuit parasitic inductance.

[0150] In the embodiment of the present invention, in the stage of ① off ② on, the second parasitic inductance data includes the first collector parasitic inductance, the second collector parasitic inductance, the second emitter parasitic inductance and the module circuit parasitic inductance. The second parasitic inductance data is input into the second preset total parasitic inductance function for calculation to obtain the second total parasitic inductance simulation data.

[0151] S3213. Input the second parasitic capacitance data into the second preset total parasitic capacitance function to determine the second total parasitic capacitance simulation data.

[0152] The second preset total parasitic capacitance function is specifically:

[0153]

[0154] Wherein, represents the second total parasitic capacitance simulation data, specifically the second total parasitic capacitance, represents the second gate-collector parasitic capacitance, represents the second collector-emitter parasitic capacitance.

[0155] In the embodiment of the present invention, in the stage of ① off ② on, the second parasitic capacitance data includes the second gate-collector parasitic capacitance and the second collector-emitter parasitic capacitance. The second parasitic capacitance data is input into the second preset total parasitic capacitance function for calculation to obtain the second total parasitic capacitance simulation data.

[0156] S3214. Use the second total parasitic inductance simulation data, the second total parasitic capacitance simulation data and the module characteristic parameters to determine the second maximum reverse current simulation data.

[0157] Pack 3214 into the form of a formula, specifically:

[0158]

[0159]

[0160]

[0161] Wherein, represents the second maximum reverse current simulation data, specifically the second maximum reverse current.

[0162] In the embodiments of the present invention, the angular velocity is calculated using the second total parasitic inductance simulation data and the second total parasitic capacitance simulation data, the period is calculated using the angular velocity, the module characteristic parameters include the reverse recovery charge, and the second maximum reverse current simulation data can be calculated using the reverse recovery charge and the angular velocity, or the second maximum reverse current simulation data can also be calculated using the reverse recovery charge and the period.

[0163] S322. Determine the first-order circuit simulation data using the module characteristic parameters.

[0164] The first-order circuit simulation data includes the first-order maximum reverse current;

[0165] S322 is encapsulated in the form of a formula, specifically:

[0166]

[0167]

[0168] Wherein, represents the first-order maximum reverse current, represents the maximum turn-off current at the current moment, represents the discharge moment, represents the fall time, represents the time constant.

[0169] In the embodiments of the present invention, the module characteristic parameters further include the fall time, the maximum turn-off current at the current moment, and the discharge moment. Among them, the RC circuit uses the fall time in the preset device data sheet as a reference, and the fall time is defined as the time from 90% to 10%, which can be considered as a first-order process of T down = 2.2τ. Through the above formula, using the second gate resistance data, the second parasitic capacitance data, and the module characteristic parameters, the first-order total equivalent resistance, the first-order total parasitic capacitance, and the first-order maximum reverse current are calculated.

[0170] Step 104. Compare the oscillation simulation data with the preset standard operating condition data.

[0171] The preset standard operating condition data refers to a set of reference standard data that should be exhibited under the preset ideal operating conditions.

[0172] In the embodiments of the present invention, the oscillation simulation data is compared with the preset standard operating condition data.

[0173] It should be noted that it is necessary to compare whether all the simulation data in the oscillation simulation data is consistent with the preset standard operating condition data.

[0174] Step 105: If the oscillation simulation data is consistent with the preset standard operating condition data, then use the initial real-time model as the target real-time model of the target IGBT module.

[0175] In the embodiment of the present invention, if the oscillation simulation data is consistent with the preset standard operating condition data, then use the initial real-time model as the target real-time model of the target IGBT module.

[0176] Further, it further includes:

[0177] Step 106: If the oscillation simulation data is inconsistent with the preset standard operating condition data, then jump to the step of obtaining the oscillation characteristic parameters of the oscillation stage at the moment of switching of the target IGBT module by performing switching operations on the equivalent circuit of the preset module.

[0178] In the embodiment of the present invention, if the oscillation simulation data is inconsistent with the preset standard operating condition data, then jump to the step of obtaining the oscillation characteristic parameters of the oscillation stage at the moment of switching of the target IGBT module by performing switching operations on the equivalent circuit of the preset module, perform the switching operation again to obtain new oscillation characteristic parameters, and then perform real-time oscillation simulation until the oscillation simulation data is consistent with the preset standard operating condition data.

[0179] In subsequent applications, input the obtained oscillation characteristic parameters and module characteristic parameters of the silicon carbide IGBT module to be analyzed into the constructed target real-time model, and output the oscillation data for the switching transient process of the silicon carbide IGBT module. It can be understood as the above-mentioned calculated oscillation simulation data, which constitutes different types of waveforms for describing this oscillation curve, such as the maximum value, oscillation frequency, how to decay, etc. Corresponding measures to reduce oscillation can be taken. For example, if you want the oscillation process to decay faster, you can increase the resistance value in the subsystem. Another example is that the maximum protection value of the circuit can be designed through the maximum value of the current overshoot. If it exceeds this limit, it can be determined that the relay protection device needs to perform a protection action, etc. Through these curves, circuit analysis can be further refined.

[0180] The following provides a test example:

[0181] Select a test silicon carbide IGBT module, construct the corresponding target real-time model of the test silicon carbide IGBT module through the above-mentioned modeling method, and then input the oscillation characteristic parameters and module characteristic parameters into the target real-time model to output oscillation test data.

[0182] Please refer to Figure 7 and Figure 8 as shown, Figure 7Waveform schematic diagram for the turn-on test of a silicon carbide IGBT module and the actual working conditions; in the figure, the waveform composed of black dots is the turn-on waveform generated in this test example, and the colored waveforms are the actual working condition waveforms generated under different inputs and different currents.

[0183] Figure 8 Waveform schematic diagram for the turn-off test of a silicon carbide IGBT module and the actual working conditions; in the figure, the waveform composed of black dots is the turn-off waveform generated in this test example, and the colored waveforms are the actual working condition waveforms generated under different inputs and different currents.

[0184] Through the above Figure 7 and Figure 8 as shown, it can be obtained that the two sets of data are basically consistent, which proves the effectiveness of the model.

[0185] It is worth mentioning that the above model operation formula greatly reduces the amount of calculation for the oscillating current, and can highly match the actual equipment data sheet. It can simplify the entire turn-on condition or turn-off condition process into the superposition of an RLC circuit or an RLC and RC circuit, realizing the condition simplification with physical interpretability. The present invention can not only quickly model the silicon carbide IGBT module, but also achieve real-time operation efficiency, and can be connected to the hardware-in-the-loop test to evaluate the safety and adequacy of the power system and its control system.

[0186] Please refer to Figure 9 , Figure 9 which is the structural block diagram of a simulation modeling system for a real-time model of a silicon carbide IGBT module provided by an embodiment of the present invention.

[0187] A simulation modeling system for a real-time model of a silicon carbide IGBT module provided by the present invention includes:

[0188] A response module 201, configured to respond to a modeling request for a target IGBT module, and obtain the module characteristic parameters of the target IGBT module through a preset equipment data sheet;

[0189] A switch operation module 202, configured to obtain the oscillation characteristic parameters of the oscillation stage at the moment of switching of the target IGBT module by performing switch operations on a preset module equivalent circuit;

[0190] An oscillation simulation module 203, configured to construct an initial real-time model, and input the oscillation characteristic parameters and the module characteristic parameters into the initial real-time model for real-time oscillation simulation, and output oscillation simulation data;

[0191] A data comparison module 204, configured to compare the oscillation simulation data with preset standard working condition data;

[0192] The model output module 205 is configured to use the initial real-time model as the target real-time model of the target IGBT module if the oscillation simulation data is consistent with the preset standard operating condition data.

[0193] Further, it further includes:

[0194] The jump module 206 is configured to jump to the step of obtaining the oscillation characteristic parameters of the oscillation stage at the moment of switching of the target IGBT module by performing switching operations on the preset module equivalent circuit if the oscillation simulation data is inconsistent with the preset standard operating condition data.

[0195] Further, the oscillation characteristic parameters include a first oscillation characteristic parameter and a second oscillation characteristic parameter, the initial real-time model includes an on-moment oscillation circuit model and an off-moment oscillation circuit model, and the oscillation simulation module 203 includes:

[0196] The first oscillation simulation data sub-module is configured to perform real-time oscillation simulation by inputting the first oscillation characteristic parameter and the module characteristic parameter into the on-moment oscillation circuit model, and output the first oscillation simulation data;

[0197] The second oscillation simulation data sub-module is configured to perform real-time oscillation simulation by inputting the second oscillation characteristic parameter and the module characteristic parameter into the off-moment oscillation circuit model, and output the second oscillation simulation data;

[0198] The oscillation simulation data includes the first oscillation simulation data and the second oscillation simulation data.

[0199] Further, the first oscillation characteristic parameter includes first gate resistance data, first parasitic inductance data, and first parasitic capacitance data, and the first oscillation simulation data sub-module includes:

[0200] The first total equivalent resistance simulation data unit is configured to input the first gate resistance data into the first preset gate total resistance function to determine the first total equivalent resistance simulation data;

[0201] The first total parasitic inductance simulation data unit is configured to input the first parasitic inductance data into the first preset parasitic total inductance function to determine the first total parasitic inductance simulation data;

[0202] The first total parasitic capacitance simulation data unit is configured to input the first parasitic capacitance data into the first preset parasitic total capacitance function to determine the first total parasitic capacitance simulation data;

[0203] The first maximum reverse current simulation data unit is configured to determine the first maximum reverse current simulation data by using the first total parasitic inductance simulation data, the first total parasitic capacitance simulation data, and the module characteristic parameter;

[0204] The first oscillation simulation data includes first total equivalent resistance simulation data, first total parasitic inductance simulation data, first total parasitic capacitance simulation data, and first maximum reverse current simulation data.

[0205] Further, the second oscillation characteristic parameters include second gate resistance data, second parasitic inductance data, and second parasitic capacitance data. The second oscillation simulation data sub-module includes:

[0206] A second-order circuit simulation data unit, configured to use the second gate resistance data, the second parasitic inductance data, the second parasitic capacitance data, and the module characteristic parameters to determine second-order circuit simulation data;

[0207] A first-order circuit simulation data unit, configured to use the module characteristic parameters to determine first-order circuit simulation data;

[0208] The second oscillation simulation data includes first-order circuit simulation data and second-order circuit simulation data.

[0209] Further, the second-order circuit simulation data unit includes:

[0210] A second total equivalent resistance simulation data sub-unit, configured to input the second gate resistance data into a second preset gate total resistance function to determine the second total equivalent resistance simulation data;

[0211] A second total parasitic inductance simulation data sub-unit, configured to input the second parasitic inductance data into a second preset parasitic total inductance function to determine the second total parasitic inductance simulation data;

[0212] A second total parasitic capacitance simulation data sub-unit, configured to input the second parasitic capacitance data into a second preset parasitic total capacitance function to determine the second total parasitic capacitance simulation data;

[0213] A second maximum reverse current simulation data sub-unit, configured to use the second total parasitic inductance simulation data, the second total parasitic capacitance simulation data, and the module characteristic parameters to determine the second maximum reverse current simulation data;

[0214] The second-order circuit simulation data includes second total equivalent resistance simulation data, second total parasitic inductance simulation data, second total parasitic capacitance simulation data, and second maximum reverse current simulation data.

[0215] Please refer to Figure 10 , Figure 10 which is a structural block diagram of a computer device provided by an embodiment of the present invention.

[0216] An electronic device according to an embodiment of the present invention, the electronic device includes: a memory 301 and a processor 302, and a computer program is stored in the memory 301; when the computer program is executed by the processor 302, the processor 302 is caused to execute the simulation modeling method of the silicon carbide IGBT module real-time model as described in any of the above embodiments.

[0217] The memory 301 may be an electronic memory such as a flash memory, an EEPROM (electrically erasable programmable read-only memory), an EPROM, a hard disk, or a ROM. The memory 301 has a storage space 303 for program code 313 for executing any method step in the above method. For example, the storage space 303 for program code may include respective program codes 313 for implementing various steps in the above method. These program codes may be read from or written into one or more computer program products. These computer program products include program code carriers such as hard disks, compact discs (CDs), memory cards, or floppy disks. The program code may be compressed in a suitable form, for example. When these codes are run by a computing processing device, the computing processing device is caused to execute each of the steps in the method described above. These program codes may be read from or written into one or more computer program products. These computer program products include program code carriers such as hard disks, compact discs (CDs), memory cards, or floppy disks. The program code may be compressed in a suitable form, for example. When these codes are run by a computing processing device, the computing processing device is caused to execute each of the steps in the simulation modeling method of the silicon carbide IGBT module real-time model described above.

[0218] An embodiment of the present invention also provides a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the simulation modeling method of the silicon carbide IGBT module real-time model as described in any of the above embodiments is implemented.

[0219] An embodiment of the present invention also provides a computer program product, the computer program product includes a computer program stored on a non-transitory computer-readable storage medium, the computer program includes program instructions, and when the program instructions are executed by a computer, the computer is caused to execute the simulation modeling method of the silicon carbide IGBT module real-time model as described in any of the above embodiments.

[0220] Those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working processes of the systems, devices, and units described above may refer to the corresponding processes in the foregoing method embodiments and will not be described herein again.

[0221] In several embodiments provided in this application, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of units is only a logical function division. In actual implementation, there may be other division methods. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the displayed or discussed couplings or direct couplings or communication connections to each other can be through some interfaces, and the indirect couplings or communication connections of devices or units can be in electrical, mechanical, or other forms.

[0222] The units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they can be located in one place or distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0223] In addition, in each embodiment of the present invention, the functional units can be integrated into a processing unit, or each unit can exist physically alone, or two or more units can be integrated into one unit. The above-mentioned integrated units can be implemented in the form of hardware or in the form of software functional units.

[0224] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of this technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods in each embodiment of the present invention. The foregoing storage medium includes: various media such as USB flash drives, mobile hard disks, read-only memories (ROM, Read-Only Memory), random access memories (RAM, Random Access Memory), magnetic disks, or optical discs that can store program codes.

[0225] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of each embodiment of the present invention.

Claims

1. A simulation modeling method for a real-time model of a silicon carbide IGBT module, characterized in that: include: In response to a modeling request for a target IGBT module, module characteristic parameters of the target IGBT module are obtained through a preset device data table; By performing a switching operation on a preset module equivalent circuit, an oscillation characteristic parameter of the target IGBT module switching instantaneous oscillation stage is obtained; Constructing an initial real-time model, and using the oscillation characteristic parameters and the module characteristic parameters to input the initial real-time model to perform real-time oscillation simulation, and outputting oscillation simulation data; Comparing the vibration simulation data with preset standard working condition data; If the oscillation simulation data is consistent with the preset standard operating condition data, the initial real-time model is used as the target real-time model of the target IGBT module.

2. The simulation modeling method of the silicon carbide IGBT module real-time model according to claim 1, characterized in that: Also includes: If the oscillation simulation data is inconsistent with the preset standard operating condition data, jump to the step of obtaining the oscillation characteristic parameters of the target IGBT module switch instantaneous oscillation stage by performing a switching operation on the preset module equivalent circuit.

3. The simulation modeling method of the silicon carbide IGBT module real-time model according to claim 1, characterized in that: The oscillation characteristic parameters include a first oscillation characteristic parameter and a second oscillation characteristic parameter, the initial real-time model includes an on-instant oscillation circuit model and a off-instant oscillation circuit model, and the step of using the oscillation characteristic parameters and the module characteristic parameters to input the initial real-time model to perform real-time oscillation simulation and output oscillation simulation data includes: Using the first oscillation characteristic parameter and the module characteristic parameter to input the turn-on instant oscillation circuit model to perform real-time oscillation simulation, and output first oscillation simulation data; Using the second oscillation characteristic parameter and the module characteristic parameter to input the instantaneous oscillation circuit model to perform real-time oscillation simulation, and output second oscillation simulation data; The oscillation simulation data includes the first oscillation simulation data and the second oscillation simulation data.

4. The simulation modeling method of the silicon carbide IGBT module real-time model according to claim 3 is characterized in that: The first oscillation characteristic parameters include first gate resistance data, first parasitic inductance data, and first parasitic capacitance data. The step of using the first oscillation characteristic parameters and the module characteristic parameters to input the turn-on instant oscillation circuit model to perform real-time oscillation simulation and output first oscillation simulation data includes: Using the first gate resistance data to input a first preset total gate resistance function to determine first total equivalent resistance simulation data; Using the first parasitic inductance data to input a first preset parasitic total inductance function to determine first total parasitic inductance simulation data; Using the first parasitic capacitance data to input a first preset parasitic total capacitance function to determine first total parasitic capacitance simulation data; Determine first maximum reverse current simulation data using the first total parasitic inductance simulation data, the first total parasitic capacitance simulation data, and the module characteristic parameters; The first oscillation simulation data includes the first total equivalent resistance simulation data, the first total parasitic inductance simulation data, the first total parasitic capacitance simulation data and the first maximum reverse current simulation data.

5. The simulation modeling method of the silicon carbide IGBT module real-time model according to claim 3, characterized in that: The second oscillation characteristic parameters include second gate resistance data, second parasitic inductance data, and second parasitic capacitance data. The step of using the second oscillation characteristic parameters and the module characteristic parameters to input the instantaneous oscillation circuit model for real-time oscillation simulation and outputting second oscillation simulation data includes: Determine second-order circuit simulation data using the second gate resistance data, the second parasitic inductance data, the second parasitic capacitance data and the module characteristic parameters; Determine first-order circuit simulation data using the module characteristic parameters; The second oscillation simulation data includes the first-order circuit simulation data and the second-order circuit simulation data.

6. The simulation modeling method of the silicon carbide IGBT module real-time model according to claim 5, characterized in that: The step of using the second gate resistance data, the second parasitic inductance data, the second parasitic capacitance data and the module characteristic parameters to determine the second-order circuit simulation data includes: Using the second gate resistance data to input a second preset gate total resistance function to determine second total equivalent resistance simulation data; Using the second parasitic inductance data to input a second preset parasitic total inductance function to determine second total parasitic inductance simulation data; Using the second parasitic capacitance data to input a second preset parasitic total capacitance function to determine second total parasitic capacitance simulation data; Determine second maximum reverse current simulation data using the second total parasitic inductance simulation data, the second total parasitic capacitance simulation data and the module characteristic parameters; The second-order circuit simulation data includes the second total equivalent resistance simulation data, the second total parasitic inductance simulation data, the second total parasitic capacitance simulation data and the second maximum reverse current simulation data.

7. A simulation modeling system for a real-time model of a silicon carbide IGBT module, based on the simulation modeling method for a real-time model of a silicon carbide IGBT module according to any one of claims 1 to 6, characterized in that: include: A response module, used to respond to a modeling request for a target IGBT module, and obtain module characteristic parameters of the target IGBT module through a preset device data table; A switch operation module, used to obtain the oscillation characteristic parameters of the target IGBT module switch in the instantaneous oscillation stage by performing a switch operation on a preset module equivalent circuit; An oscillation simulation module, used to construct an initial real-time model, and use the oscillation characteristic parameters and the module characteristic parameters to input the initial real-time model to perform real-time oscillation simulation, and output oscillation simulation data; A data comparison module, used for comparing the vibration simulation data with preset standard working condition data; A model output module is used to use the initial real-time model as the target real-time model of the target IGBT module if the oscillation simulation data is consistent with the preset standard operating condition data.

8. An electronic device, characterized in that: It comprises a memory and a processor, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, the processor executes the steps of the simulation modeling method of the silicon carbide IGBT module real-time model as described in any one of claims 1 to 6.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed, the simulation modeling method of the silicon carbide IGBT module real-time model as described in any one of claims 1 to 6 is implemented.

10. A computer program product, characterized in that The computer program product includes a computer program stored on a non-transitory computer-readable storage medium, and the computer program includes program instructions, wherein when the program instructions are executed by a computer, the computer executes the simulation modeling method of the silicon carbide IGBT module real-time model as described in any one of claims 1-6.

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