Semiconductor de-bonding equipment and method

Abstract

The invention provides semiconductor de-bonding equipment and a semiconductor de-bonding method. The semiconductor de-bonding equipment comprises a rotary positioning mechanism, a clamping mechanism, a separating mechanism and a lifting mechanism, the rotary positioning mechanism fixes the second wafer and drives the second wafer to rotate by a set angle in the axial direction, and the separation mechanism penetrates into a bonding interface layer formed between the first wafer and the second wafer in the horizontal direction so as to form a notch in a local area of the bonding interface layer; after the separating mechanism forms a plurality of notches distributed at equal intervals in the circumferential direction on the bonding interface layer, the clamping mechanism clamps the edge of the first wafer, and the lifting mechanism drives the first wafer and / or the second wafer to move in the longitudinal direction so as to completely separate the first wafer from the second wafer. According to the semiconductor de-bonding equipment disclosed by the invention, the fragment rate of the first wafer is reduced in the de-bonding process, and safe separation of the first wafer and the second wafer is ensured.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor debonding, and particularly to a semiconductor debonding device and method. Background Art

[0002] In the process of semiconductor manufacturing, temporary bonding and debonding technologies are one of the key steps. By adopting the method of temporary bonding, the wafer is transferred to the carrier to provide strength support, and debonding is carried out after the back thinning of the wafer or other double-sided processes are completed.

[0003] Existing debonding devices usually adsorb the wafer by negative pressure and achieve complete separation of the wafer and the carrier under the action of physical forces. However, when the back thinning process of the wafer is completed, in the process of completely separating the ultra-thin wafer and the carrier by this method, a high fragmentation rate of the thinned wafer will occur due to excessive mechanical stress.

[0004] It should be noted that the above introduction of the background art is only for the convenience of clearly and completely explaining the technical solutions of the present application and facilitating the understanding of those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art just because these solutions are described in the background art part of the present application. Summary of the Invention

[0005] The purpose of the present invention is to disclose a semiconductor debonding device and method, which are used to solve many defects existing in the existing debonding devices in the prior art, and in particular to reduce the fragmentation rate of the first wafer during the debonding process.

[0006] To achieve the above purpose, the present invention provides a semiconductor debonding device, including: a rotation positioning mechanism, a clamping mechanism, a separation mechanism and a lifting mechanism;

[0007] The rotation positioning mechanism fixes the second wafer and drives the second wafer to rotate by a set angle along the axial direction. The separation mechanism pierces into the bonding interface layer formed between the first wafer and the second wafer along the horizontal direction to form a notch in a local area of the bonding interface layer;

[0008] After the separation mechanism forms a plurality of notches distributed at equal intervals along the circumferential direction in the bonding interface layer, the clamping mechanism clamps the edge of the first wafer, and the lifting mechanism drives the first wafer and / or the second wafer to move longitudinally to completely separate the first wafer and the second wafer.

[0009] As a further improvement of the present invention, the lifting mechanism is configured to drive the clamping mechanism to move longitudinally;

[0010] After the separating mechanism forms a plurality of notches evenly distributed at circumferential intervals on the bonding interface layer, the edge of the first wafer is clamped by the clamping mechanism, and the lifting mechanism drives the clamping mechanism to drive the first wafer to rise longitudinally relative to the second wafer to completely separate the first wafer from the second wafer.

[0011] As a further improvement of the present invention, the lifting mechanism is configured to drive the rotation positioning mechanism to move longitudinally;

[0012] After the separating mechanism forms a plurality of notches evenly distributed at circumferential intervals on the bonding interface layer, the edge of the first wafer is clamped by the clamping mechanism, and the lifting mechanism drives the rotation positioning mechanism to drive the second wafer to descend longitudinally relative to the first wafer to completely separate the first wafer from the second wafer.

[0013] As a further improvement of the present invention, the lifting mechanism is configured to respectively drive the clamping mechanism and the rotation positioning mechanism to move longitudinally;

[0014] After the separating mechanism forms a plurality of notches evenly distributed at circumferential intervals on the bonding interface layer, the edge of the first wafer is clamped by the clamping mechanism, the lifting mechanism drives the clamping mechanism to drive the first wafer to rise longitudinally relative to the second wafer, and the lifting mechanism drives the rotation positioning mechanism to drive the second wafer to descend longitudinally relative to the first wafer to completely separate the first wafer from the second wafer.

[0015] As a further improvement of the present invention, the clamping mechanism includes: an opening and closing driving unit, and two clamping members controlled by the opening and closing driving unit to approach or separate from each other to clamp or release the edge of the first wafer.

[0016] As a further improvement of the present invention, the clamping member is convexly provided downward longitudinally to form a protruding portion for clamping the edge of the first wafer.

[0017] As a further improvement of the present invention, the separating mechanism includes: a piercing member, and a horizontal displacement driving unit for driving the piercing member to move horizontally to pierce the bonding interface layer.

[0018] As a further improvement of the present invention, the rotation positioning mechanism includes: a positioning component for carrying and fixing the second wafer, and a rotation driving component for driving the positioning component to drive the second wafer to rotate axially.

[0019] As a further improvement of the present invention, the clamping mechanism further includes: horizontal displacement guides and guiding members respectively disposed on the two clamping members, the guiding members extending toward the horizontal displacement guides and movably connected to the horizontal displacement guides to guide the two clamping members to perform linear motion in the horizontal direction.

[0020] Based on the same inventive concept, the present invention also provides a semiconductor debonding method, including the following steps:

[0021] Step S1: Place the second wafer carrying the first wafer on the rotary positioning mechanism;

[0022] Step S2: The rotary positioning mechanism fixes the second wafer and drives the second wafer to rotate axially by a set angle;

[0023] Step S3: The separation mechanism forms a plurality of notches evenly distributed at equal intervals in the circumferential direction on the bonding interface layer;

[0024] Step S4: The clamping mechanism clamps the edge of the first wafer;

[0025] Step S5: The lifting mechanism drives the first wafer and / or the second wafer to move longitudinally to completely separate the first wafer from the second wafer.

[0026] Compared with the prior art, the beneficial effects of the present invention are: by forming a plurality of notches evenly distributed at equal intervals in the circumferential direction on the bonding interface layer, the adhesion force between the first wafer and the second wafer is weakened, the mechanical force required to finally completely separate the first wafer from the second wafer is reduced, and the stress of the bonding interface layer between the first wafer and the second wafer is evenly distributed to avoid stress concentration. During the process of separating the first wafer and the second wafer, the lifting mechanism only needs to apply a small mechanical force to complete the complete separation of the first wafer and the second wafer, thereby avoiding applying too large a mechanical force to the first wafer and reducing the risk of cracking of the first wafer during the debonding process. Description of the Drawings

[0027] Figure 1 It is a schematic structural diagram of the semiconductor debonding device disclosed by the present invention, in which the lifting mechanism is configured to drive the clamping mechanism to move longitudinally, and the horizontal displacement guides and the guiding members are omitted;

[0028] Figure 2 It is a schematic structural diagram of the separation mechanism piercing between the first wafer and the second wafer, in which the bonding interface layer is omitted;

[0029] Figure 3 It is a schematic structural diagram of the lifting mechanism driving the clamping mechanism to clamp the first wafer;

[0030] Figure 4Schematic structural diagram of the lifting mechanism driving the clamping mechanism to drive the first wafer to separate longitudinally relative to the second wafer;

[0031] Figure 5 Schematic structural diagram of the semiconductor debonding device disclosed by the present invention, wherein the lifting mechanism is configured to drive the rotary positioning mechanism to move longitudinally;

[0032] Figure 6 Schematic structural diagram of the lifting mechanism driving the rotary positioning mechanism to drive the second wafer to separate longitudinally relative to the first wafer;

[0033] Figure 7 Schematic structural diagram of the semiconductor debonding device disclosed by the present invention, wherein the lifting mechanism is configured to drive the clamping mechanism and the rotary positioning mechanism to move longitudinally respectively;

[0034] Figure 8 Schematic diagram of the lifting mechanism driving the clamping mechanism to drive the first wafer to rise longitudinally relative to the second wafer and driving the rotary positioning mechanism to drive the second wafer to descend longitudinally relative to the first wafer;

[0035] Figure 9 Schematic structural diagram of the piercing end configured as a conical structure and piercing the first wafer and the second wafer, wherein the bonding interface layer is omitted;

[0036] Figure 10 Schematic structural diagram of the piercing end configured as a thin sheet structure and piercing the first wafer and the second wafer, wherein the bonding interface layer is omitted;

[0037] Figure 11 Top view schematic diagram of the separation mechanism forming two equally spaced notches in the bonding interface layer;

[0038] Figure 12 Top view of the clamping member not clamping the edge of the first wafer;

[0039] Figure 13 Top view of the clamping member clamping the edge of the first wafer;

[0040] Figure 14 Flowchart of the semiconductor debonding method. Detailed Description of the Invention

[0041] The present invention will be described in detail below in conjunction with the embodiments shown in the accompanying drawings. However, it should be noted that these embodiments are not intended to limit the present invention. Any equivalent transformation or substitution in terms of function, method, or structure made by those of ordinary skill in the art based on these embodiments shall fall within the protection scope of the present invention.

[0042] The drawings in the present invention are not strictly drawn to actual scale, and the specific dimensions of each structure can be determined according to actual needs. The drawings described in the present invention are only schematic diagrams of the structure.

[0043] A semiconductor debonding device 100 disclosed in the present application is used to debond a temporarily bonded wafer. The bonded wafer in this embodiment includes a first wafer 201 and a second wafer 202 that are connected up and down in a temporary bonding manner. Optionally, the first wafer 201 is a semiconductor wafer, for example, a silicon-based wafer, a gallium nitride wafer, etc.; the second wafer 202 is a carrier, for example, glass, sapphire, silicon carbide, etc. The second wafer 202 serves as a substrate to provide support for the first wafer 201. The first wafer 201 can form microelectronic devices through semiconductor process steps such as photolithography, etching, diffusion, deposition, and cleaning. The first wafer 201 and the second wafer 202 can also be homogeneous wafers, that is, both the first wafer 201 and the second wafer 202 are semiconductor wafers; further, both the first wafer 201 and the second wafer 202 can be silicon-based wafers with a standard thickness, or both can be thinned silicon-based wafers, or specific examples such as the first wafer 201 being a thinned silicon-based wafer and the second wafer 202 being a silicon-based wafer with a standard thickness. This embodiment takes the second wafer 202 as the substrate and the first wafer 201 as the thinned wafer as an example for illustration.

[0044] Compared with the prior art debonding device that adsorbs the upper wafer with negative pressure and realizes the complete separation of the wafer and the carrier under the action of physical force, the semiconductor debonding device 100 destroys the bonding interface layer J formed between the first wafer 201 and the second wafer 202 through the separation mechanism 4 to form a notch M in a local area of the bonding interface layer J. The separation mechanism 4 forms a plurality of notches M evenly distributed in the circumferential direction in the bonding interface layer J to weaken the adhesion strength of the bonding interface layer J, and then longitudinally separates the first wafer 201 and / or the second wafer 202 through the lifting mechanism 3 to realize the safe separation of the first wafer 201 and the second wafer 202, reducing the fragmentation rate of the first wafer 201 during the debonding process.

[0045] See Figures 1 to 13 As shown, a specific implementation of a semiconductor debonding device 100 is disclosed in the present application. The semiconductor debonding device 100 includes: a rotary positioning mechanism 1, a clamping mechanism 5, a separation mechanism 4, and a lifting mechanism 3; the rotary positioning mechanism 1 fixes the second wafer 202 and drives the second wafer 202 along the axial direction ( Figure 1Rotate a set angle in the direction shown by the central axis Q, and the separation mechanism 4 pierces into the bonding interface layer J formed by the bonding interface layer J in the horizontal direction to form a notch M in a local area of the bonding interface layer J; after the separation mechanism 4 forms a plurality of notches M distributed at equal intervals in the circumferential direction in the bonding interface layer J, the clamping mechanism 5 clamps the edge of the first wafer 201, and the lifting mechanism 3 drives the first wafer 201 and / or the second wafer 202 to move longitudinally to completely separate the first wafer 201 from the second wafer 202.

[0046] The semiconductor debonding device 100 provided in the above embodiment of the present application forms a plurality of notches M distributed at equal intervals in the circumferential direction in the bonding interface layer J to weaken the adhesion force of the bonding interface layer J, reduce the mechanical force required to finally completely separate the first wafer 201 from the second wafer 202, and make the stress of the bonding interface layer J between the first wafer 201 and the second wafer 202 evenly distributed to avoid stress concentration. During the process of separating the first wafer 201 and the second wafer 202, the lifting mechanism 3 only needs to apply a small mechanical force to complete the complete separation of the first wafer 201 and the second wafer 202, thereby avoiding applying too large a mechanical force to the first wafer 201 and reducing the risk of cracking of the first wafer 201 during the debonding process. And during the process of the lifting mechanism 3 driving the first wafer 201 and the second wafer 202 to move longitudinally, the clamping mechanism 5 clamps the edge of the first wafer 201 to ensure that the first wafer 201 and the second wafer 202 are aligned during the debonding process, avoid sliding or tilting, and make the mechanical force applied by the lifting mechanism 3 evenly distributed on the edge of the first wafer 201 through the clamping mechanism 5, avoid concentrating on a certain area of the first wafer 201, reduce local stress concentration, and further reduce the risk of cracking of the first wafer 201 during the debonding process.

[0047] Refer Figure 1 to Figure 2 As shown, the rotation positioning mechanism 1 fixes the second wafer 202 and drives the second wafer 202 to rotate a set angle along the axial direction. The second wafer 202 carries the first wafer 201, and the first wafer 201 and the second wafer 202 are closely attached through a temporary bonding material (such as bonding glue, polymer or other adhesives) to form a bonding interface layer J between the first wafer 201 and the second wafer 202.

[0048] In some examples, the rotation positioning mechanism 1 and the clamping mechanism 5 are along the longitudinal direction ( Figure 1They are oppositely arranged in the direction shown by the Y-axis in the figure and are located below the clamping mechanism 5. Place the second wafer 202 carrying the first wafer 201 on the rotary positioning mechanism 1. After the rotary positioning mechanism 1 fixes the second wafer 202, drive the second wafer 202 to rotate by a set angle, so that the separation mechanism 4 can pierce the bonding interface layer J at different positions to form a plurality of notches M in different regions of the bonding interface layer J, thereby reducing the strength of the adhesion area corresponding to each notch M and weakening the adhesion force to the bonding interface layer J, so as to reduce the mechanical force required for subsequent complete separation of the first wafer 201 and the second wafer 202. And through the uniform distribution of the plurality of notches M, the adhesion force of the bonding interface layer J can be further dispersed, so that the adhesion force between the first wafer 201 and the second wafer 202 is released more quickly during the debonding process, so as to accelerate the operation time for complete separation of the first wafer 201 and the second wafer 202 and improve production efficiency.

[0049] In some examples, referring to Figure 1 As shown, the rotary positioning mechanism 1 includes: a positioning component 11 for carrying and fixing the second wafer 202, and a rotary driving component 12 for driving the positioning component 11 to drive the second wafer 202 to rotate axially. The positioning component 11 supports and fixes the second wafer 202 in a horizontal posture, and the rotary driving component 12 drives the positioning component 11 to drive the second wafer 202 to rotate axially.

[0050] In some examples, the positioning component 11 can be configured as a vacuum adsorption platform, and negative pressure is formed by pumping air to generate an adsorption force on the second wafer 202 to fix the second wafer 202, ensuring that the second wafer 202 maintains a horizontal posture and is fixed during the entire debonding process, avoiding movement caused by residual temporary bonding glue or other factors, and improving the separation accuracy.

[0051] In some examples, the rotary driving component 12 can be configured as a precision stepper motor or a servo motor to precisely control the angle of each rotation of the positioning component 11 (for example, the set angles are 180°, 120°, 90°, etc.), ensuring that the plurality of notches M are evenly distributed in the bonding interface layer J. The rotary driving component 12 can also be other driving devices for controlling the rotation of the positioning component 11, and the present application does not limit this.

[0052] In some examples, the separation mechanism 4 pierces the bonding interface layer J in the horizontal direction ( Figure 1 the direction shown by the X-axis in the figure) to form a notch M in the bonding interface layer J. After the rotary positioning mechanism 1 fixes the second wafer 202, the separation mechanism 4 pierces the bonding interface layer J horizontally in the Figure 2 direction shown by the arrow X1 in the figure to form a notch M in the bonding interface layer J and then along Figure 3It is pulled out from the bonding interface layer J in the direction indicated by the arrow X2. After that, every time the rotation positioning mechanism 1 drives the second wafer 202 to rotate by a set angle, the separation mechanism 4 repeats the piercing and pulling-out steps to form a plurality of notches M evenly distributed circumferentially along the bonding interface layer J, weakening the adhesion force of the bonding interface layer J, reducing the mechanical force required for finally completely separating the first wafer 201 from the second wafer 202, and making the stress of the bonding interface layer J evenly distributed to avoid stress concentration.

[0053] In some examples, when it is necessary to form N notches M evenly distributed circumferentially along the bonding interface layer J, the rotation positioning mechanism 1 drives the second wafer 202 to rotate by a set angle axially, which can be calculated according to the following formula (1):

[0054]

[0055] Where the parameter N is the number of notches M, and the parameter F is the rotation angle.

[0056] For example, when it is necessary to form two notches M evenly distributed circumferentially along the bonding interface layer J, N = 2, F = 180°. After the separation mechanism 4 forms the first notch M in a local area of the bonding interface layer J, the rotation positioning mechanism 1 drives the second wafer 202 to rotate 180° axially, so that the separation mechanism 4 can form the second notch M in another local area of the bonding interface layer J. The two notches M are separated by 180° in the bonding interface layer J to achieve the circumferential equal-spacing distribution of the two notches M.

[0057] In some examples, when it is necessary to form three notches M evenly distributed circumferentially along the bonding interface layer J, N = 3, F = 120°. After the separation mechanism 4 first forms the first notch M in a local area of the bonding interface layer J, the rotation positioning mechanism 1 drives the second wafer 202 to rotate 120° axially, so that the separation mechanism 4 forms the second notch M in another local area of the bonding interface layer J. Then the rotation positioning mechanism 1 drives the second wafer 202 to rotate 120° axially again, so that the separation mechanism 4 can form the third notch M in another local area of the bonding interface layer J. The three notches M are separated by 120° in the bonding interface layer J to achieve the circumferential equal-spacing distribution of the three notches M.

[0058] In some examples, as Figure 12 shown Figure 13 The clamping mechanism 5 is used to clamp or release the edge of the first wafer 201. By clamping the edge of the first wafer 201 with the clamping mechanism 5, a uniform clamping force is applied to the edge of the first wafer 201 to prevent the first wafer 201 from being damaged due to excessive local stress, and to ensure that the first wafer 201 remains stable during the debonding process to prevent sliding or loosening.

[0059] In some examples, the lifting mechanism 3 is used to drive the first wafer 201 and / or the second wafer 202 to move longitudinally, and finally achieve the complete separation of the first wafer 201 and the second wafer 202. When the lifting mechanism 3 drives the first wafer 201 and / or the second wafer 202 to move longitudinally by a set distance, the longitudinal mechanical force applied to the first wafer 201 and / or the second wafer 202 will preferentially act on the adhesion weak area at the notch M, and the separation force will uniformly diffuse from the notch M to the surrounding until it covers the entire bonding interface layer J, so that the separation force is evenly distributed on the bonding interface layer J, avoiding local stress concentration, and thus ensuring the smooth and safe separation of the first wafer 201 and the second wafer 202.

[0060] In some examples, the lifting mechanism 3 can be configured as a ball screw drive device, and is connected to the rotary positioning mechanism 1 and / or the clamping mechanism 5 through the cantilever 31, and drives the rotary positioning mechanism 1 and / or the clamping mechanism 5 to move longitudinally by driving the cantilever 31. Since the lifting mechanism 3 is not the inventive point of this application, it will not be described in detail.

[0061] In some examples, as Figures 1 to 4 shown, the lifting mechanism 3 is configured to drive the clamping mechanism 5 to move longitudinally; after the separating mechanism 4 forms a plurality of notches M evenly distributed along the circumferential direction on the bonding interface layer J, the clamping mechanism 5 clamps the edge of the first wafer 201, and the lifting mechanism 3 drives the clamping mechanism 5 to drive the first wafer 201 to rise longitudinally relative to the second wafer 202 to completely separate the first wafer 201 and the second wafer 202. After the separating mechanism 4 forms a plurality of notches M evenly distributed along the circumferential direction on the bonding interface layer J, the lifting mechanism 3 drives the clamping mechanism 5 to move downward in the direction shown by the arrow Y1 in Figure 3 , and after the clamping mechanism 5 clamps the edge of the first wafer 201, the lifting mechanism 3 drives the clamping mechanism 5 to move upward in the direction shown by the arrow Y2 in Figure 4 . Since the second wafer 202 is fixed by the rotary positioning mechanism 1, during the process of the lifting mechanism 3 driving the clamping mechanism 5 to drive the first wafer 201 to rise longitudinally, the mechanical force is evenly transmitted to the first wafer 201 through the clamping mechanism 5, and the adhesion weak area at the notch M is preferentially stressed, and the separation force uniformly diffuses from the notch M to the surrounding until it covers the entire bonding interface layer J, so that the separation force is evenly distributed on the bonding interface layer J, avoiding local stress concentration, and finally achieving the complete separation of the first wafer 201 and the second wafer 202 through a smooth rising action, so as to avoid applying too large a mechanical stress to the whole of the first wafer 201 at one time during the debonding process and causing cracking, and reducing the chip breakage rate.

[0062] In some examples, as Figure 5 shown Figure 6As shown, the lifting mechanism 3 is configured to drive the rotary positioning mechanism 1 to move longitudinally; after the separating mechanism 4 forms a plurality of notches M that are circumferentially equally spaced on the bonding interface layer J, the clamping mechanism 5 clamps the edge of the first wafer 201, and the lifting mechanism 3 drives the rotary positioning mechanism 1 to drive the second wafer 202 to descend longitudinally relative to the first wafer 201 to completely separate the first wafer 201 from the second wafer 202. After the separating mechanism 4 forms a plurality of notches M that are circumferentially equally spaced on the bonding interface layer J, the lifting mechanism 3 drives the clamping mechanism 5 to move downward in the direction indicated by the arrow Y1 in Figure 6 As shown. Since the first wafer 201 is fixed by the clamping mechanism 5, when the lifting mechanism 3 drives the rotary positioning mechanism 1 to drive the second wafer 202 to descend longitudinally relative to the first wafer 201, the adhesion weak area at the notch M is preferentially stressed, and the separating force uniformly diffuses from the notch M to the surroundings until it covers the entire bonding interface layer J, so that the separating force is evenly distributed on the bonding interface layer J, avoiding local stress concentration, and finally realizing the complete separation of the first wafer 201 and the second wafer 202 through a smooth descending action, so as to avoid applying excessive mechanical stress to the first wafer 201 as a whole at one time during the debonding process and causing cracking, and reducing the chip breakage rate.

[0063] In some examples, referring to Figure 7 and Figure 8 As shown, the lifting mechanism 3 is configured to drive the clamping mechanism 5 and the rotary positioning mechanism 1 to move longitudinally respectively; after the separating mechanism 4 forms a plurality of notches M that are circumferentially equally spaced on the bonding interface layer J, the clamping mechanism 5 clamps the edge of the first wafer 201, the lifting mechanism 3 drives the clamping mechanism 5 to drive the first wafer 201 to ascend longitudinally relative to the second wafer 202, and the lifting mechanism 3 drives the rotary positioning mechanism 1 to drive the second wafer 202 to descend longitudinally relative to the first wafer 201 to completely separate the first wafer 201 from the second wafer 202. After the separating mechanism 4 forms a plurality of notches M that are circumferentially equally spaced on the bonding interface layer J, the lifting mechanism 3 drives the clamping mechanism 5 to move downward in the direction indicated by the arrow Y1 in Figure 7 As shown. After the clamping mechanism 5 clamps the edge of the first wafer 201, the lifting mechanism 3 drives the rotary positioning mechanism 1 to move downward in the direction indicated by the arrow Y1 in Figure 8 As shown, and at the same time, the lifting mechanism 3 drives the clamping mechanism 5 to move along Figure 8It moves upward in the direction indicated by the arrow Y2. During this process, since the clamping mechanism 5 fixes the first wafer 201 and the rotation positioning mechanism 1 fixes the second wafer 202, the lifting mechanism 3 controls the clamping mechanism 5 and the rotation positioning mechanism 1 to move upward and downward respectively, so that the separation force can be gradually and smoothly transmitted to the bonding interface layer J until the entire bonding interface layer J is covered. By smoothly driving the rotation positioning mechanism 1 and the clamping mechanism 5 to move downward and upward respectively by the lifting mechanism 3, it effectively avoids damaging the first wafer 201 due to too fast application of mechanical force or stress concentration. Through the smooth lifting action, the complete separation of the first wafer 201 and the second wafer 202 is finally realized, so as to avoid applying excessive mechanical stress to the whole of the first wafer 201 at one time during the debonding process, resulting in cracking, and reducing the chip breakage rate.

[0064] In some examples, referring Figure 1 to Figure 12 and Figure 13 as shown, the clamping mechanism 5 includes: an opening and closing driving unit 51, and two clamping members 52 that are controlled by the opening and closing driving unit 51 to approach or separate from each other to clamp or release the edge of the first wafer 201. By controlling the opening and closing of the two clamping members 52 by the opening and closing driving unit 51, the clamping mechanism 5 can firmly clamp the edge of the first wafer 201, avoiding sliding, tilting or position deviation of the first wafer 201 during the debonding process. By clamping the edge of the first wafer 201 with the two clamping members 52, the mechanical force of the lifting mechanism 3 is accurately transmitted to a plurality of notches M, and the separation force gradually expands from the notches M to the entire bonding interface layer J. The adhesion force of the bonding interface layer J to the first wafer 201 and the second wafer 202 is weakened through the notches M. The clamping mechanism 5 stably clamps the edge of the first wafer 201, ensuring uniform force on the first wafer 201 during the debonding process and avoiding local stress concentration.

[0065] In some examples, referring Figure 12 to Figure 13 as shown, the opening and closing driving unit 51 includes two driving arms 511 respectively connected to the two clamping members 52. The opening and closing driving unit 51 drives the two driving arms 511 to approach or separate from each other to synchronously drive the two clamping members 52 to move, so as to drive the two clamping members 52 to clamp or release the edge of the first wafer 201. Optionally, the opening and closing driving unit 51 is configured as a combination of a servo motor (not shown) and a ball screw (not shown) to realize driving the two driving arms 511 to approach or separate from each other to synchronously drive the two clamping members 52 to move. Since the opening and closing driving unit 51 is a mature prior art, it is not described in detail in this embodiment.

[0066] In some examples, referring Figure 1 to Figure 2As shown, the clamping member 52 projects downward longitudinally to form a protruding portion 521 that clamps the edge of the first wafer 201. In some examples, the protruding portion 521 is designed to be arc-shaped, preferably semi-circular (not shown), which closely fits the edge of the first wafer 201 to provide a larger contact area, enhance the clamping force on the first wafer 201, thereby firmly clamping the edge of the first wafer 201 and ensuring the stability during the debonding process of the first wafer 201. And the semi-circular protruding portion 521 can distribute the clamping force more evenly on both sides of the edge of the first wafer 201, avoiding excessive local stress that may cause wafer breakage. The protruding portion 521 can be adjusted according to the first wafers 201 of different sizes, so as to increase the versatility and flexibility of the semiconductor debonding device 100.

[0067] As shown in Figures 1 to 8 FIG. 5, the separation mechanism 4 includes: a piercing member 41, and a horizontal displacement driving unit 42 that drives the piercing member 41 to move horizontally to pierce the bonding interface layer J. After the rotary positioning mechanism 1 fixes the second wafer 202, the horizontal displacement driving unit 42 drives the piercing member 41 to move horizontally and in the Figure 2 direction shown by the arrow X1 in FIG. 5, so as to drive the piercing member 41 to horizontally pierce the bonding interface layer J, thereby forming a notch M in a local area of the bonding interface layer J to weaken the adhesion of the bonding interface layer J and reduce the mechanical force required for subsequent separation of the first wafer 201 and the second wafer 202. By precisely controlling the moving position of the piercing member 41 and the piercing of the bonding interface layer J by the horizontal displacement driving unit 42, the influence of the piercing operation on the surface and edge of the first wafer 201 is reduced, and the risk of breakage of the first wafer 201 is reduced. In some examples, the horizontal displacement driving unit 42 can be configured as an electric slide table, a modular device integrating a motor, a lead screw and a linear guide rail, and realizes the linear motion of the piercing member 41 in the horizontal direction through motor drive. The horizontal displacement driving unit 42 can also be other devices that can realize the horizontal linear motion of the piercing member 41, and the present application does not limit this.

[0068] In some examples, the piercing member 41 is constructed with a piercing end 411. The piercing end 411 is configured as a Figure 9 tapered structure 411a as shown in Figure 1The cross-sectional shape formed by the middle X-axis sectioning is an isosceles triangle (not shown). Through the tapered structure 411a, the piercing end 411 can penetrate the bonding interface layer J more easily when piercing the bonding interface layer J, gradually expand the gap M, and reduce the resistance of the initial piercing bonding interface layer J through the tapered structure 411a, to reduce the impact force to the first wafer 201 and the second wafer 202. Through the cross section of the isosceles triangle, the tapered structure 411a can concentrate power on the tip, further reduce the required power of piercing the bonding interface layer J, and the tapered structure 411a can gradually weaken the adhesion of the bonding interface layer J during the piercing process, and ensure the accurate control of the piercing point.

[0069] In some examples, the insertion end 411 may also be Figure 10 The thin sheet structure 411b shown in the figure has uniform thickness and is an iso-height plane as a whole. When penetrating the bonding interface layer J, the force is evenly distributed in the bonding interface layer J to avoid local stress concentration, so as to form a uniform notch M and reduce the risk of fragmentation.

[0070] In some examples, reference Figure 12 and Figure 13 As shown, the clamping mechanism 5 also includes: a horizontal displacement guide 54 and a guide 55 respectively configured on the two clamping members 52, the guide 55 extends toward the horizontal displacement guide 54 and is movably connected to the horizontal displacement guide 54 to guide the two clamping members 52 to move linearly in the horizontal direction. The opening and closing drive unit 51 controls the two clamping members 52 to move synchronously in the horizontal direction, and through the guidance of the horizontal displacement guide 54 and the guide 55, ensures that the clamping members 52 move in a straight line to achieve uniform clamping of the edge of the first wafer 201. When the first wafer 201 needs to be released, the opening and closing drive unit 51 controls the two clamping members 52 to move synchronously in the horizontal direction, and also through the guidance of the horizontal displacement guide 54 and the guide 55, ensures that the clamping members 52 move in a straight line to achieve a smooth release of the first wafer 201. The horizontal displacement guide 54 and the guide 55 are used to limit the movement path of the clamping member 52 in the horizontal direction to avoid deviation during the clamping process, so as to ensure that the clamping member 52 can perform precise linear motion in the horizontal direction. Under the control of the opening and closing drive unit 51, the two clamping members 52 can be synchronously moved closer or farther away to achieve uniform clamping or release of the edge of the first wafer 201, ensuring that the clamping force can be evenly distributed on the edge of the first wafer 201, reducing local stress concentration and reducing the risk of cracking of the first wafer 201.

[0071] Based on the technical solution included in the semiconductor debonding device 100 disclosed in the aforementioned embodiment, the present application discloses a specific implementation of a semiconductor debonding method.

[0072] Ginseng Figures 1 to 14As shown, in this embodiment, the semiconductor debonding method includes the following steps:

[0073] Step S1: Place the second wafer 202 carrying the first wafer 201 on the rotary positioning mechanism 1.

[0074] Step S2: The rotary positioning mechanism 1 fixes the second wafer 202 and drives the second wafer 202 to rotate a set angle along the axial direction.

[0075] Step S3: The separation mechanism 4 forms a plurality of notches M that are equally spaced along the circumferential direction at the bonding interface layer J; after the rotary positioning mechanism 1 drives the second wafer 202 to rotate a set angle each time, the separation mechanism 4 pierces into the bonding interface layer J in the direction shown by the arrow X1 in Figure 2 to form a notch M in the bonding interface layer J and then pulls out in the direction shown by the arrow X2 in Figure 3 to form a plurality of notches M that are equally spaced along the circumferential direction at the bonding interface layer J.

[0076] Step S4: The clamping mechanism 5 clamps the edge of the first wafer 201.

[0077] Step S5: The lifting mechanism 3 drives the first wafer 201 and / or the second wafer 202 to move longitudinally to completely separate the first wafer 201 from the second wafer 202. The mechanical force applied by the lifting mechanism 3 first acts on the notches M, and the adhesion weak area at the notches M is preferentially stressed. The separation force uniformly diffuses from the notches M to the surrounding areas until it covers the entire bonding interface layer J, so that the separation force is evenly distributed on the bonding interface layer J, avoiding local stress concentration, and thus ensuring the smooth separation of the first wafer 201 and the second wafer 202.

[0078] The semiconductor debonding method forms a plurality of notches M that are evenly distributed circumferentially in the bonding interface layer J to weaken the adhesion of the bonding interface layer J, reduce the mechanical force required to finally completely separate the first wafer 201 and the second wafer 202, and make the stress of the bonding interface layer J between the first wafer 201 and the second wafer 202 evenly distributed to avoid stress concentration. During the process of separating the first wafer 201 and the second wafer 202, the lifting mechanism 3 only needs to apply a small mechanical force to complete the complete separation of the first wafer 201 and the second wafer 202, thereby avoiding applying too large a mechanical force to the first wafer 201 and reducing the risk of cracking of the first wafer 201 during debonding. And during the process of driving the first wafer 201 and the second wafer 202 to move longitudinally by the lifting mechanism 3, the edge of the first wafer 201 is clamped by the clamping mechanism 5 to ensure that the first wafer 201 and the second wafer 202 are aligned during debonding and prevent sliding or tilting. And the mechanical force applied by the lifting mechanism 3 can be evenly distributed on the edge of the first wafer 201 through the clamping mechanism 5, avoiding concentrating on a certain area of the first wafer 201, reducing local stress concentration, further reducing the risk of cracking of the first wafer 201, and reducing the chip breakage rate.

[0079] The series of detailed descriptions listed above are only specific descriptions of the feasible implementation manners of the present invention, and they are not intended to limit the protection scope of the present invention. Any equivalent implementation manners or changes made without departing from the technical spirit of the present invention should be included in the protection scope of the present invention.

[0080] For those skilled in the art, it is obvious that the present invention is not limited to the details of the above exemplary embodiments, and can be implemented in other specific forms without departing from the spirit or basic characteristics of the present invention. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-limiting. The scope of the present invention is defined by the appended claims rather than the above description. Therefore, all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be included in the present invention. Any reference signs in the claims should not be regarded as limiting the claimed claim.

[0081] In addition, it should be understood that although this specification is described according to embodiments, not every embodiment only contains an independent technical solution. This narrative manner of the specification is only for clarity. Those skilled in the art should regard the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A semiconductor debonding device, characterized in that: include: Rotating positioning mechanism, clamping mechanism, separation mechanism and lifting mechanism; The rotation positioning mechanism fixes the second wafer and drives the second wafer to rotate axially at a set angle, and the separation mechanism penetrates into the bonding interface layer formed between the first wafer and the second wafer in the horizontal direction to form a notch in a local area of ​​the bonding interface layer; After the separation mechanism forms a plurality of notches equally spaced along the circumferential direction on the bonding interface layer, the edge of the first wafer is clamped by the clamping mechanism, and the lifting mechanism drives the first wafer and / or the second wafer to move longitudinally to completely separate the first wafer from the second wafer.

2. The semiconductor debonding device according to claim 1, characterized in that: The lifting mechanism is configured to drive the clamping mechanism to move in the longitudinal direction; After the separation mechanism forms a plurality of notches equally spaced along the circumferential direction on the bonding interface layer, the edge of the first wafer is clamped by the clamping mechanism, and the lifting mechanism drives the clamping mechanism to lift the first wafer longitudinally relative to the second wafer, so as to completely separate the first wafer from the second wafer.

3. The semiconductor debonding device according to claim 1, characterized in that: The lifting mechanism is configured to drive the rotation positioning mechanism to move in the longitudinal direction; After the separation mechanism forms a plurality of notches equally spaced along the circumferential direction on the bonding interface layer, the edge of the first wafer is clamped by the clamping mechanism, and the lifting mechanism drives the rotation positioning mechanism to drive the second wafer to descend longitudinally relative to the first wafer, so as to completely separate the first wafer from the second wafer.

4. The semiconductor debonding device according to claim 1, characterized in that: The lifting mechanism is configured to respectively drive the clamping mechanism and the rotation positioning mechanism to move longitudinally; After the separation mechanism forms a plurality of notches equally spaced along the circumferential direction on the bonding interface layer, the edge of the first wafer is clamped by the clamping mechanism, and the lifting mechanism drives the clamping mechanism to drive the first wafer to rise longitudinally relative to the second wafer, and the lifting mechanism drives the rotation positioning mechanism to drive the second wafer to descend longitudinally relative to the first wafer, so as to completely separate the first wafer from the second wafer.

5. The semiconductor debonding device according to any one of claims 1 to 4, characterized in that: The clamping mechanism includes: an opening and closing driving unit, and two clamping members which are controlled by the opening and closing driving unit to move closer to or farther from each other to clamp or release the edge of the first wafer.

6. The semiconductor debonding device according to claim 5, characterized in that: The clamping member protrudes downward along the longitudinal direction to form a protrusion for clamping the edge of the first wafer.

7. The semiconductor debonding device according to claim 5, characterized in that: The separation mechanism comprises: a piercing member and a horizontal displacement driving unit for driving the piercing member to move in a horizontal direction to pierce the bonding interface layer.

8. The semiconductor debonding device according to claim 5, characterized in that: The rotation positioning mechanism comprises: a positioning component for carrying and fixing the second wafer, and a rotation driving component for driving the positioning component to drive the second wafer to rotate along the axial direction.

9. The semiconductor debonding device according to claim 5, characterized in that: The clamping mechanism further includes: a horizontal displacement guide and a guide member respectively arranged on the two clamping members, wherein the guide member extends toward the horizontal displacement guide member and is movably connected to the horizontal displacement guide member to guide the two clamping members to perform linear motion along the horizontal direction.

10. A semiconductor debonding method, characterized in that: The steps include: Step S1, placing the second wafer carrying the first wafer on a rotation positioning mechanism; Step S2, the rotation positioning mechanism fixes the second wafer and drives the second wafer to rotate axially by a set angle; Step S3, the separation mechanism forms a plurality of notches equally spaced along the circumferential direction on the bonding interface layer; Step S4, the clamping mechanism clamps the edge of the first wafer; Step S5: The lifting mechanism drives the first wafer and / or the second wafer to move longitudinally to completely separate the first wafer from the second wafer.

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