Semiconductor de-bonding device and method

Abstract

The invention provides a semiconductor de-bonding device and method. The semiconductor de-bonding device comprises a first positioning mechanism, a second positioning mechanism, a separating mechanism, a rotating mechanism and a lifting mechanism, the first positioning mechanism is used for fixing a second wafer, and the separating mechanism penetrates into a bonding interface layer formed between the first wafer and the second wafer along the horizontal direction so as to form a notch in a local area of the bonding interface layer; the rotating mechanism drives the first positioning mechanism to drive the second wafer to rotate by a set angle in the axial direction, or the rotating mechanism drives the separating mechanism to rotate by a set angle around the first positioning mechanism; and after the separating mechanism forms a plurality of notches which are distributed at equal intervals in the circumferential direction on the bonding interface layer, the first wafer is fixed by the second positioning mechanism, and the lifting mechanism drives the first wafer and / or the second wafer to move in the longitudinal direction, so that the first wafer and the second wafer are completely separated. According to the semiconductor de-bonding device disclosed by the invention, the fragment rate of the first wafer is reduced in the de-bonding process.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor debonding, and particularly to a semiconductor debonding device and method. Background Art

[0002] In the process of semiconductor manufacturing, the temporary bonding and debonding technology is one of the key steps. By adopting the temporary bonding method, the wafer is transferred to the carrier to provide strength support, and after the back thinning of the wafer or other double-sided processes are completed, debonding is carried out.

[0003] Existing debonding equipment usually adsorbs the wafer by negative pressure and applies a physical force to separate the wafer from the carrier. However, after the back thinning process of the wafer is completed, since the wafer becomes thin and fragile, the traditional debonding method is prone to apply excessive mechanical stress during the separation process, resulting in a high fragment rate of the thinned wafer.

[0004] It should be noted that the above introduction of the background art is only for the convenience of clearly and completely explaining the technical solutions of the present application and facilitating the understanding of those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art just because these solutions are described in the background art part of the present application. Summary of the Invention

[0005] The purpose of the present invention is to disclose a semiconductor debonding device and method, which are used to solve various defects existing in the existing debonding equipment, especially to reduce the fragment rate of the first wafer during the debonding process.

[0006] To achieve the above purpose, the present invention provides a semiconductor debonding device, including: a first positioning mechanism, a second positioning mechanism, a separation mechanism, a rotation mechanism and a lifting mechanism;

[0007] The first positioning mechanism fixes the second wafer, and the separation mechanism pierces into the bonding interface layer formed between the first wafer and the second wafer in the horizontal direction to form a notch in a local area of the bonding interface layer;

[0008] The rotation mechanism drives the first positioning mechanism to drive the second wafer to rotate a set angle along the axis, or the rotation mechanism drives the separation mechanism to rotate a set angle around the first positioning mechanism;

[0009] After the separation mechanism forms a plurality of notches evenly distributed in the circumferential direction in the bonding interface layer, the second positioning mechanism fixes the first wafer, and the lifting mechanism drives the first wafer and / or the second wafer to move longitudinally to completely separate the first wafer from the second wafer.

[0010] As a further improvement of the present invention, the lifting mechanism is configured to drive the second positioning mechanism to move longitudinally;

[0011] After the separating mechanism forms a plurality of notches evenly distributed in the circumferential direction on the bonding interface layer, the first wafer is fixed by the second positioning mechanism, and the lifting mechanism drives the second positioning mechanism to drive the first wafer to rise longitudinally relative to the second wafer to completely separate the first wafer from the second wafer.

[0012] As a further improvement of the present invention, the lifting mechanism is configured to drive the first positioning mechanism to move longitudinally;

[0013] After the separating mechanism forms a plurality of notches evenly distributed in the circumferential direction on the bonding interface layer, the first wafer is fixed by the second positioning mechanism, and the lifting mechanism drives the first positioning mechanism to drive the second wafer to descend longitudinally relative to the first wafer to completely separate the first wafer from the second wafer.

[0014] As a further improvement of the present invention, the lifting mechanism is configured to drive the second positioning mechanism and the first positioning mechanism to move longitudinally respectively;

[0015] After the separating mechanism forms a plurality of notches evenly distributed in the circumferential direction on the bonding interface layer, the first wafer is fixed by the second positioning mechanism, the lifting mechanism drives the second positioning mechanism to drive the first wafer to rise longitudinally relative to the second wafer, and the lifting mechanism drives the first positioning mechanism to drive the second wafer to descend longitudinally relative to the first wafer to completely separate the first wafer from the second wafer.

[0016] As a further improvement of the present invention, the first positioning mechanism is configured as a clamping device for clamping the edge of the second wafer, or the first positioning mechanism is configured as a vacuum adsorption device for adsorbing the surface of the second wafer.

[0017] As a further improvement of the present invention, the second positioning mechanism is configured as a clamping device for clamping the edge of the first wafer, or the second positioning mechanism is configured as a vacuum adsorption device for adsorbing the surface of the first wafer.

[0018] As a further improvement of the present invention, the clamping device includes: an opening and closing drive unit, and two clamping members controlled by the opening and closing drive unit to approach or separate from each other to clamp or release the edge of the first wafer.

[0019] As a further improvement of the present invention, the separation mechanism includes: a piercing member, and a horizontal displacement driving unit configured to drive the piercing member to move horizontally to pierce the bonding interface layer.

[0020] As a further improvement of the present invention, the rotating mechanism is configured to drive the separation mechanism to rotate a set angle around the first positioning mechanism;

[0021] The rotating mechanism includes: an annular guide rail coaxially arranged outside the first positioning mechanism, a movable block movably connected to the annular guide rail and configured to hold the separation mechanism, and an annular displacement driving unit configured to drive the movable block to move along the annular guide rail to drive the separation mechanism to rotate a set angle around the first positioning mechanism.

[0022] As a further improvement of the present invention, the clamping device further includes: a horizontal displacement guide member and a guiding member respectively configured on the two clamping members, the guiding member extending towards the horizontal displacement guide member and movably connected to the horizontal displacement guide member to guide the two clamping members to perform linear motion in the horizontal direction.

[0023] Based on the same inventive concept, the present invention also provides a semiconductor debonding method, including the following steps:

[0024] Step S1: Place the second wafer carrying the first wafer on the first positioning mechanism;

[0025] Step S2: The first positioning mechanism fixes the second wafer, and the rotating mechanism drives the first positioning mechanism to drive the second wafer to rotate a set angle along the axial direction, or the rotating mechanism drives the separation mechanism to rotate a set angle around the first positioning mechanism;

[0026] Step S3: The separation mechanism forms a plurality of notches evenly distributed at equal intervals in the circumferential direction on the bonding interface layer;

[0027] Step S4: The second positioning mechanism fixes the second wafer;

[0028] Step S5: The lifting mechanism drives the first wafer and / or the second wafer to move longitudinally to completely separate the first wafer from the second wafer.

[0029] Compared with the prior art, the beneficial effects of the present invention are:

[0030] The bonding interface layer formed between the first wafer and the second wafer is damaged by the separation mechanism to form notches in a local area of the bonding interface layer. A plurality of notches evenly distributed at equal intervals in the circumferential direction are formed on the bonding interface layer by the separation mechanism to weaken the adhesion strength of the bonding interface layer. Then, the first wafer and / or the second wafer are longitudinally separated by the lifting mechanism to achieve the safe separation of the first wafer and the second wafer, reducing the fragment rate of the first wafer during the debonding process. Description of the Drawings

[0031] Figure 1 Schematic structural diagram of the semiconductor debonding device disclosed in the present invention, wherein the lifting mechanism is configured to drive the second positioning mechanism to move longitudinally, and the separating mechanism pierces between the first wafer and the second wafer, wherein the bonding interface layer, the horizontal displacement guide and the guide are omitted;

[0032] Figure 2 Schematic structural diagram of the lifting mechanism driving the second positioning mechanism to fix the first wafer;

[0033] Figure 3 Schematic structural diagram of the lifting mechanism driving the second positioning mechanism to drive the first wafer to separate longitudinally relative to the second wafer;

[0034] Figure 4 Schematic structural diagram of the rotating mechanism driving the separating mechanism to rotate a set angle around the first positioning mechanism;

[0035] Figure 5 Top view schematic diagram of the rotating mechanism driving the separating mechanism to rotate a set angle around the first positioning mechanism, wherein the lifting mechanism is omitted;

[0036] Figure 6 Schematic structural diagram of the semiconductor debonding device disclosed in the present invention, wherein the lifting mechanism is configured to drive the first positioning mechanism to move longitudinally;

[0037] Figure 7 Schematic structural diagram of the lifting mechanism driving the first positioning mechanism to drive the second wafer to separate longitudinally relative to the first wafer;

[0038] Figure 8 Schematic structural diagram of the semiconductor debonding device disclosed in the present invention, wherein the lifting mechanism is configured to drive the first positioning mechanism and the second positioning mechanism to move longitudinally respectively;

[0039] Figure 9 Schematic diagram of the lifting mechanism driving the second positioning mechanism to drive the first wafer to rise longitudinally relative to the second wafer and driving the first positioning mechanism to drive the second wafer to descend longitudinally relative to the first wafer;

[0040] Figure 10 Schematic structural diagram of the piercing end configured as a conical structure and piercing between the first wafer and the second wafer, wherein the bonding interface layer is omitted;

[0041] Figure 11 Schematic structural diagram of the piercing end configured as a thin sheet structure and piercing between the first wafer and the second wafer, wherein the bonding interface layer is omitted;

[0042] Figure 12A top view schematic diagram of the separation mechanism forming two equally spaced notches in the bonding interface layer;

[0043] Figure 13 A top view of the clamping member not clamping the edge of the first wafer;

[0044] Figure 14 A top view of the clamping member clamping the edge of the first wafer;

[0045] Figure 15 A flowchart of the semiconductor debonding method. Detailed implementation manners

[0046] The present invention will be described in detail below in conjunction with the embodiments shown in the drawings. It should be noted, however, that these embodiments are not limitations of the present invention, and any equivalent transformation or substitution in terms of function, method, or structure made by those of ordinary skill in the art based on these embodiments falls within the protection scope of the present invention.

[0047] The drawings in the present invention are not strictly drawn to actual scale, and the specific dimensions of each structure can be determined according to actual needs. The drawings described in the present invention are only schematic diagrams of the structure.

[0048] A semiconductor debonding device 100 disclosed in the present application is used to debond a temporarily bonded (Temporary Bonding) bonded wafer. In this embodiment, the bonded wafer includes a first wafer 201 and a second wafer 202 that are connected up and down in a temporary bonding manner. Optionally, the first wafer 201 is a semiconductor wafer, for example, a silicon-based wafer, a gallium nitride wafer, etc.; the second wafer 202 is a carrier, for example, glass, sapphire, silicon carbide, etc. The second wafer 202 serves as a substrate to provide support for the first wafer 201. The first wafer 201 can form microelectronic devices through semiconductor process steps such as photolithography, etching, diffusion, deposition, and cleaning. The first wafer 201 and the second wafer 202 can also be homogeneous wafers, that is, both the first wafer 201 and the second wafer 202 are semiconductor wafers; further, both the first wafer 201 and the second wafer 202 can be silicon-based wafers with a standard thickness, or both can be thinned silicon-based wafers, or specific examples such as the first wafer 201 being a thinned silicon-based wafer and the second wafer 202 being a silicon-based wafer with a standard thickness. This embodiment takes the second wafer 202 as the substrate and the first wafer 201 as the thinned wafer as an example for illustration.

[0049] Compared with the debonding device in the prior art that adsorbs the upper wafer with negative pressure and realizes the complete separation of the wafer and the carrier under the action of physical force, the semiconductor debonding device 100 destroys the bonding interface layer J formed between the first wafer 201 and the second wafer 202 through the separation mechanism 4 to form a notch M in a local area of the bonding interface layer J. The separation mechanism 4 forms a plurality of notches M evenly distributed along the circumferential direction in the bonding interface layer J to weaken the adhesion strength of the bonding interface layer J, and then longitudinally separates the first wafer 201 and / or the second wafer 202 through the lifting mechanism 3 to realize the safe separation of the first wafer 201 and the second wafer 202, reducing the fragmentation rate of the first wafer 201 during the debonding process.

[0050] As shown Figures 1 to 12 The semiconductor debonding device 100 includes: a first positioning mechanism 1, a second positioning mechanism 5, a separation mechanism 4, a rotating mechanism 6 and a lifting mechanism 3; the first positioning mechanism 1 fixes the second wafer 202, and the separation mechanism 4 pierces into the bonding interface layer J formed between the first wafer 201 and the second wafer 202 in the horizontal direction to form a notch M in a local area of the bonding interface layer J; the rotating mechanism 6a drives the first positioning mechanism 1 to drive the second wafer 202 to rotate a set angle along the axial direction, or the rotating mechanism 6b drives the separation mechanism 4 to rotate a set angle around the first positioning mechanism 1; after the separation mechanism 4 forms a plurality of notches M evenly distributed along the circumferential direction in the bonding interface layer J, the second positioning mechanism 5 fixes the first wafer 201, and the lifting mechanism 3 drives the first wafer 201 and / or the second wafer 202 to move longitudinally to completely separate the first wafer 201 and the second wafer 202.

[0051] In the semiconductor debonding device 100 provided in the above embodiment of the present application, the second wafer 202 is fixed by the first positioning mechanism 1, and the separation mechanism 4 pierces into the bonding interface layer J in the horizontal direction and then retracts to form a notch M in the bonding interface layer J. Then, after the rotating mechanism 6a drives the first positioning mechanism 1 to drive the second wafer 202 to rotate a set angle along the axial direction, or after the rotating mechanism 6b drives the separation mechanism 4 to rotate a set angle around the first positioning mechanism 1, the separation mechanism 4 pierces into the bonding interface layer J again, and the cycle continues until the separation mechanism 4 forms a plurality of notches M evenly distributed along the circumferential direction in the bonding interface layer J to weaken the overall adhesion strength of the bonding interface layer J, reduce the mechanical force required for finally completely separating the first wafer 201 and the second wafer 202, and make the stress evenly distributed in the bonding interface layer J to avoid stress concentration. After a plurality of notches M evenly distributed along the circumferential direction are formed in the bonding interface layer J, the first wafer 201 is fixed by the second positioning mechanism 5, and the first wafer 201 and / or the second wafer 202 are driven by the lifting mechanism 3 to move longitudinally ( Figure 1Move in the direction indicated by the Y-axis in the figure) to longitudinally separate the first wafer 201 and the second wafer 202. During the separation of the first wafer 201 and the second wafer 202, the lifting mechanism 3 only needs to apply a small mechanical force to complete the complete separation of the first wafer 201 and the second wafer 202, avoiding applying too much mechanical force to the first wafer 201 and reducing the fragmentation rate of the first wafer 201 during the debonding process.

[0052] As Figure 1 shown, in some examples, the second wafer 202 carries the first wafer 201. The first wafer 201 and the second wafer 202 are closely attached through a temporary bonding material (such as bonding glue, polymer or other adhesives), and a bonding interface layer J is formed between the first wafer 201 and the second wafer 202. The first positioning mechanism 1 and the second positioning mechanism 5 are arranged oppositely along the longitudinal direction, and the first positioning mechanism 1 is located below the second positioning mechanism 5. The first positioning mechanism 1 supports and fixes the second wafer 202 in a horizontal posture, and the rotating mechanism 6a drives the first positioning mechanism 1 to drive the second wafer 202 to rotate axially. Place the second wafer 202 carrying the first wafer 201 on the first positioning mechanism 1. After the first positioning mechanism 1 fixes the second wafer 202, the rotating mechanism 6a drives the first positioning mechanism 1 to drive the second wafer 202 to rotate a set angle, or the rotating mechanism 6b drives the separating mechanism 4 to rotate a set angle around the first positioning mechanism 1, so that the separating mechanism 4 can pierce the bonding interface layer J at different positions to form a plurality of notches M in the bonding interface layer J, thereby reducing the strength of the adhesion area corresponding to the notches M and weakening the adhesion force of the bonding glue layer J on the first wafer 201 and the second wafer 202, reducing the mechanical force required for subsequent complete separation of the first wafer 201 and the second wafer 202. And through the uniform distribution of the plurality of notches M, the adhesion force of the bonding interface layer J can be further dispersed, so that the adhesion force between the first wafer 201 and the second wafer 202 is released more quickly during the debonding process, so as to accelerate the operation time of the complete separation of the first wafer 201 and the second wafer 202 and improve the debonding efficiency.

[0053] In some examples, the rotating mechanism 6a is configured as a precision stepper motor or a servo motor to precisely control the rotation angle of the first positioning mechanism 1 (for example, the set angles are 180°, 120°, 90°, etc.), ensuring that the plurality of notches M are evenly distributed on the bonding interface layer J. The rotating mechanism 6a can also be other driving devices that control the rotation of the first positioning mechanism 1, and the present application does not limit this.

[0054] In some examples, the lifting mechanism 3 is used to drive the first wafer 201 and / or the second wafer 202 to move longitudinally, and finally achieve the complete separation of the first wafer 201 and the second wafer 202. The separation mechanism 4 forms a plurality of notches M that are equally spaced circumferentially on the bonding interface layer J. When the lifting mechanism 3 drives the first wafer 201 and / or the second wafer 202 to move longitudinally, the longitudinal mechanical force applied to the first wafer 201 and / or the second wafer 202 will preferentially act on the adhesion weak area at the notch M, causing the bonding interface layer J to gradually expand and separate from the notch M. During this process, the separation force evenly diffuses from the notch M to the surrounding area until it covers the entire bonding interface layer J, so that the separation force is evenly distributed on the bonding interface layer J, avoiding local stress concentration, and thus ensuring the smooth and safe separation of the first wafer 201 and the second wafer 202.

[0055] In some examples, the lifting mechanism 3 can be configured as a ball screw drive device, and is connected to the first positioning mechanism 1 and / or the second positioning mechanism 5 through a cantilever 31, and drives the first positioning mechanism 1 and / or the second positioning mechanism 5 to move longitudinally by driving the cantilever 31. Since the lifting mechanism 3 is not the inventive point of this application, it will not be described in detail.

[0056] In some examples, when it is necessary to form N notches M that are equally spaced circumferentially on the bonding interface layer J, the rotation mechanism 6a drives the first positioning mechanism 1 to drive the second wafer 202 to rotate a set angle along the axial direction, or, the rotation mechanism 6b drives the separation mechanism 4 to rotate a set angle around the first positioning mechanism 1, which can be calculated according to the following formula (1):

[0057]

[0058] Wherein, the parameter N is the number of notches M, and the parameter F is the rotation angle.

[0059] For example, as Figure 12 shown, when it is necessary to form two notches M that are equally spaced circumferentially on the bonding interface layer J, N = 2, F = 180°. After the separation mechanism 4 pierces into a local area of the bonding interface layer J and forms the first notch M, the rotation mechanism 6a drives the first positioning mechanism 1 to drive the second wafer 202 to rotate 180° along the axial direction, or, the rotation mechanism 6b drives the separation mechanism 4 to rotate 180° around the first positioning mechanism 1, so that the separation mechanism 4 pierces into another local area of the bonding interface layer J again to form the second notch M, and the two notches M are separated by 180° on the bonding interface layer J to achieve the circumferential equal-spacing distribution of the two notches M.

[0060] In some examples, when three circumferentially equally spaced notches M need to be formed in the bonding interface layer J, N = 3 and F = 120°. After the separating mechanism 4 pierces a local area of the bonding interface layer J to form the first notch M, the first positioning mechanism 1 is driven by the rotating mechanism 6a to drive the second wafer 202 to rotate axially by 120°, or the separating mechanism 4 is driven by the rotating mechanism 6b to rotate around the first positioning mechanism 1 by 120°, so that the separating mechanism 4 pierces another local area of the bonding interface layer J to form the second notch M. The rotating mechanism 6a drives the first positioning mechanism 1 to drive the second wafer 202 to rotate axially by 120° again, or the rotating mechanism 6b drives the separating mechanism 4 to rotate around the first positioning mechanism 1 by 120° again, so that the separating mechanism 4 pierces another local area of the bonding interface layer J to form the third notch M. The three notches M are separated by 120° in the bonding interface layer J to achieve circumferentially equally spaced distribution of the three notches M.

[0061] In some examples, referring Figures 1 to 4 As shown, the lifting mechanism 3 is configured to drive the second positioning mechanism 5 to move longitudinally; after the separating mechanism 4 forms a plurality of circumferentially equally spaced notches M in the bonding interface layer J, the first wafer 201 is fixed by the second positioning mechanism 5, and the lifting mechanism 3 drives the second positioning mechanism 5 to drive the first wafer 201 to rise longitudinally relative to the second wafer 202 to completely separate the first wafer 201 from the second wafer 202. After the separating mechanism 4 forms a plurality of circumferentially equally spaced notches M in the bonding interface layer J, the lifting mechanism 3 drives the second positioning mechanism 5 to move downward in the direction shown by the arrow Y1 in Figure 2 After the second positioning mechanism 5 fixes the first wafer 201, the lifting mechanism 3 drives the second positioning mechanism 5 to move upward in the direction shown by the arrow Y2 in Figure 3 Since the second wafer 202 is fixed by the first positioning mechanism 1, during the process of the lifting mechanism 3 driving the second positioning mechanism 5 to drive the first wafer 201 to rise longitudinally, the mechanical force is evenly transmitted to the first wafer 201 through the second positioning mechanism 5. The adhesion weak area at the notch M is preferentially stressed, and the separation force diffuses evenly from the notch M to the surrounding until it covers the entire bonding interface layer J, so that the separation force is evenly distributed on the bonding interface layer J, avoiding local stress concentration. The complete separation of the first wafer 201 and the second wafer 202 is finally achieved through a smooth rising action, avoiding excessive mechanical stress being applied to the whole of the first wafer 201 at one time during the debonding process and resulting in cracking, and reducing the chip breakage rate.

[0062] In some examples, the lifting mechanism 3 is configured to drive the first positioning mechanism 1 to move longitudinally; after the separating mechanism 4 forms a plurality of notches M evenly distributed in the circumferential direction on the bonding interface layer J, the first wafer 201 is fixed by the second positioning mechanism 5, and the lifting mechanism 3 drives the first positioning mechanism 1 to drive the second wafer 202 to descend longitudinally relative to the first wafer 201, so as to completely separate the first wafer 201 from the second wafer 202.

[0063] After the separating mechanism 4 forms a plurality of notches M evenly distributed in the circumferential direction on the bonding interface layer J, the second positioning mechanism 5 fixes the first wafer 201, and the lifting mechanism 3 drives the first positioning mechanism 1 to drive the second wafer 202 to move downward along Figure 7 the direction shown by the arrow Y1 in the figure. The mechanical force is evenly transmitted to the second wafer 202 through the first positioning mechanism 1. The adhesion weak area at the notch M is preferentially stressed, and the separation force evenly diffuses from the notch M to the surrounding area until it covers the entire bonding interface layer J, so that the separation force is evenly distributed on the bonding interface layer J, avoiding local stress concentration, and finally realizing the complete separation of the first wafer 201 and the second wafer 202 through a smooth descending action, avoiding excessive mechanical stress being applied to the first wafer 201 as a whole at one time during the debonding process, resulting in cracking, and reducing the chip breakage rate.

[0064] In some examples, the lifting mechanism 3 is configured to drive the second positioning mechanism 5 and the first positioning mechanism 1 to move longitudinally respectively; after the separating mechanism 4 forms a plurality of notches M evenly distributed in the circumferential direction on the bonding interface layer J, the first wafer 201 is fixed by the second positioning mechanism 5, the lifting mechanism 3 drives the second positioning mechanism 5 to drive the first wafer 201 to ascend longitudinally relative to the second wafer 202, and the lifting mechanism 3 drives the first positioning mechanism 1 to drive the second wafer 202 to descend longitudinally relative to the first wafer 201, so as to completely separate the first wafer 201 from the second wafer 202.

[0065] After the separating mechanism 4 forms a plurality of notches M evenly distributed in the circumferential direction on the bonding interface layer J, the lifting mechanism 3 drives the second positioning mechanism 5 to move downward along Figure 8 the direction shown by the arrow Y1 in the figure. After the second positioning mechanism 5 fixes the first wafer 201, the lifting mechanism 3 drives the second positioning mechanism 5 to drive the first wafer 201 to move upward along Figure 9 the direction shown by the arrow Y2 in the figure, and the lifting mechanism 3 drives the first positioning mechanism 1 to drive the second wafer 202 to move downward along Figure 9It moves downward in the direction indicated by arrow Y1. During this process, since the second positioning mechanism 5 fixes the first wafer 201 and the first positioning mechanism 1 fixes the second wafer 202, the lifting mechanism 3 controls the second positioning mechanism 5 and the first positioning mechanism 1 to move upward and downward respectively, so that the mechanical force can be transmitted to the first wafer 201 and the second wafer 202 respectively. The adhesion weak area at the notch M is preferentially stressed, and the separation force uniformly diffuses from the notch M to the surrounding until it covers the entire bonding interface layer J, so that the separation force is evenly distributed on the bonding interface layer J, avoiding local stress concentration. By smoothly driving the first wafer 201 and the second wafer 202 to move upward and downward respectively, the complete separation of the first wafer 201 and the second wafer 202 is finally realized, avoiding cracking due to excessive mechanical stress applied to the whole first wafer 201 at one time during the debonding process, and ensuring the safe and reliable separation of the first wafer 201 and the second wafer 202, reducing the fragment rate.

[0066] In some examples, the first positioning mechanism 1 is configured as a clamping device (not shown) for clamping the edge of the second wafer 202. By pumping air to form a negative pressure, an adsorption force is generated on the second wafer 202 to fix the second wafer 202.

[0067] In some examples, the first positioning mechanism 1 is configured as a vacuum adsorption device 11 for adsorbing the surface of the second wafer 202. By clamping the edge of the second wafer 202 with a clamping device, the second wafer 202 is fixed, ensuring that the second wafer 202 maintains a horizontal posture and is fixed during the entire debonding process, avoiding movement caused by residual temporary bonding glue or other factors, and improving the separation accuracy.

[0068] See Figure 1 And Figure 2 As shown, in some examples, the second positioning mechanism 5 is configured as a clamping device 50 for clamping the edge of the first wafer 201. By clamping the edge of the first wafer 201 with the clamping device 50, a uniform clamping force is applied to the edge of the first wafer 201 to prevent the first wafer 201 from being damaged due to excessive local stress.

[0069] In some examples, the second positioning mechanism 5 is configured as a vacuum adsorption device (not shown) for adsorbing the surface of the first wafer 201. By pumping air to form a negative pressure, an adsorption force is generated on the first wafer 201 to fix the first wafer 201, ensuring that the first wafer 201 remains stable during the debonding process and preventing sliding or loosening.

[0070] Preferably, the second positioning mechanism 5 is configured as a clamping device 50 for clamping the edge of the first wafer 201. During the process of the lifting mechanism 3 driving the first wafer 201 and / or the second wafer 202 to move longitudinally, the edge of the first wafer 201 is clamped by the clamping device 50 to ensure that the first wafer 201 and the second wafer 202 are aligned during the debonding process, avoiding sliding or tilting. And the mechanical force applied by the lifting mechanism 3 can be evenly distributed on the edge of the first wafer 201 through the clamping device 50, avoiding concentrating on a certain area of the first wafer 201, reducing local stress concentration, and further reducing the risk of cracking of the first wafer 201 during the debonding process.

[0071] In some examples, referring Figure 13 to Figure 14 as shown, the clamping device 50 includes: an opening and closing driving unit 51, and two clamping members 52 that are controlled by the opening and closing driving unit 51 to approach or separate from each other to clamp or release the edge of the first wafer 201. By controlling the opening and closing of the two clamping members 52 through the opening and closing driving unit 51, the clamping device 50 can firmly clamp the edge of the first wafer 201, avoiding sliding, tilting or position offset of the first wafer 201 during the debonding process. By clamping the edge of the first wafer 201 with the two clamping members 52, the mechanical force of the lifting mechanism 3 is accurately transmitted to a plurality of notches M, and the separation force gradually expands from the notches M to the entire contact surface. The clamping device 50 stably clamps the edge of the first wafer 201, ensuring uniform force on the first wafer 201 during the debonding process and avoiding local stress concentration.

[0072] In some examples, referring Figure 1 to Figure 2 as shown, the clamping member 52 protrudes downward longitudinally to form a protruding portion 521 for clamping the edge of the first wafer 201. In some examples, the design of the protruding portion 521 is arc-shaped, preferably semi-arc-shaped (not shown), which closely fits the edge of the first wafer 201 to provide a larger contact area, enhance the clamping force on the first wafer 201, and thus firmly clamp the edge of the first wafer 201 to ensure the stability of the first wafer 201 during the debonding process. And the semi-arc-shaped protruding portion 521 can distribute the clamping force more evenly on both sides of the edge of the first wafer 201, avoiding excessive local force leading to wafer breakage. The protruding portion 521 can be adjusted according to different sizes of the first wafer 201 to increase the versatility and flexibility of the semiconductor debonding device 100.

[0073] In some examples, referring Figure 1 to Figure 2As shown, the separation mechanism 4 includes: a piercing member 41, and a horizontal displacement driving unit 42 that drives the piercing member 41 to move in the horizontal direction to penetrate the bonding interface layer J. After the first positioning mechanism 1 fixes the second wafer 202, the horizontal displacement driving unit 42 drives the piercing member 41 to move in the horizontal direction and along the bonding interface layer J. Figure 1 The piercing member 41 moves in the direction indicated by the arrow X1 to drive the piercing member 41 to penetrate the bonding interface layer J horizontally, and then moves along the Figure 2 The piercing member 41 is retracted in the direction indicated by the middle arrow X2, thereby forming a notch M in a local area of ​​the bonding interface layer J to weaken the adhesion of the bonding interface layer J and reduce the mechanical force required for subsequent separation of the first wafer 201 and the second wafer 202. The horizontal displacement driving unit 42 precisely controls the movement position of the piercing member 41 and the piercing of the bonding interface layer J, thereby reducing the impact of the piercing operation on the surface and edge of the first wafer 201 and reducing the risk of damage to the first wafer 201.

[0074] In some examples, the horizontal displacement drive unit 42 can be configured as an electric slide, a modular device integrating a motor, a lead screw and a linear guide rail, and driven by a motor to achieve the horizontal linear motion of the piercing member 41. The horizontal displacement drive unit 42 can also be other devices that can achieve horizontal linear motion of the piercing member 41, and this application does not limit this.

[0075] In some examples, the piercing member 41 is configured with a piercing end 411. The piercing end 411 is configured as follows: Figure 10 The tapered structure 411a shown in FIG. Figure 1 The cross-sectional shape formed by the middle X-axis sectioning is an isosceles triangle. The tapered structure 411a enables the piercing end 411 to penetrate the bonding interface layer J more easily when inserted into the bonding interface layer J, gradually expand the gap M, and reduce the resistance of the initial piercing into the bonding interface layer J through the tapered structure 411a, so as to reduce the impact force on the first wafer 201 and the second wafer 202. The isosceles triangle cross section enables the tapered structure 411a to concentrate the force on the tip, further reducing the force required for piercing the bonding interface layer J, and the tapered structure 411a can gradually weaken the adhesion of the bonding interface layer J during the piercing process, and ensure accurate control of the piercing point.

[0076] In some examples, the insertion end 411 may also be Figure 11 The thin sheet structure 411b shown in the figure has uniform thickness and is an iso-height plane as a whole. When penetrating the bonding interface layer J, the force is evenly distributed in the bonding interface layer J to avoid local stress concentration, so as to form a uniform notch M and reduce the risk of fragmentation.

[0077] In some examples, the rotation mechanism 6b is configured to drive the horizontal displacement driving unit 42 to drive the thorn separation mechanism 4 to rotate a set angle around the first positioning mechanism 1; the rotation mechanism 6b includes: an annular guide rail 61 coaxially arranged outside the first positioning mechanism 1, a moving block 62 movably connected to the annular guide rail 61 and configured for the separation mechanism 4, and an annular displacement driving unit (not shown) that drives the moving block 62 to move along the annular guide rail 61 to drive the separation mechanism 4 to rotate a set angle around the first positioning mechanism 1. The annular guide rail 61 coaxially surrounds the first positioning mechanism 1 to provide an orbit for the circumferential movement of the separation mechanism 4. The moving block 62 connects the separation mechanism 4 and the annular guide rail 61 to transmit the rotational driving force. The annular displacement driving unit drives the moving block 62 to move along the annular guide rail 61 to control the circumferential movement angle of the separation mechanism 4. By driving the moving block 62 to move along the annular guide rail 61 through the annular displacement driving unit to drive the separation mechanism 4 to rotate a set angle around the first positioning mechanism 1, the horizontal displacement driving unit 42 drives the piercing member 41 to move along the horizontal direction and along Figure 1 the direction shown by the arrow X1 in the figure to drive the piercing member 41 to horizontally pierce the bonding interface layer J, thereby forming a notch M in a local area of the bonding interface layer J. The rotation mechanism 6b realizes high-precision circumferential movement control of the separation mechanism 4 through the annular guide rail 61 and the moving block 62, and cooperates with the horizontal piercing action of the separation mechanism 4 to form a plurality of uniformly distributed notches M in the bonding interface layer J.

[0078] Refer Figure 13 to Figure 14 As shown, the clamping device 50 further includes: a horizontal displacement guide 55 and a guide 54 respectively configured for the two clamping members 52. The guide 54 extends towards the horizontal displacement guide 55 and is movably connected to the horizontal displacement guide 55 to guide the two clamping members 52 to perform a linear motion along the horizontal direction. The opening and closing driving unit 51 controls the two clamping members 52 to approach synchronously along the horizontal direction. Through the guidance of the horizontal displacement guide 54 and the guide 55, it is ensured that the clamping members 52 move in a straight line, realizing uniform clamping of the edge of the first wafer 201. When it is necessary to release the first wafer 201, the opening and closing driving unit 51 controls the two clamping members 52 to move away synchronously along the horizontal direction. Similarly, through the guidance of the horizontal displacement guide 54 and the guide 55, it is ensured that the clamping members 52 move in a straight line, realizing the stable release of the first wafer 201. Through the horizontal displacement guide 54 and the guide 55, the movement path of the clamping members 52 is restricted in the horizontal direction, avoiding deviation during the clamping process, so as to ensure that the clamping members 52 can perform precise linear motion along the horizontal direction. Under the control of the opening and closing driving unit 51, the two clamping members 52 can approach or move away synchronously, realizing uniform clamping or release of the edge of the first wafer 201, ensuring that the clamping force can be evenly distributed on the edge of the first wafer 201, reducing local stress concentration, and reducing the risk of cracking of the first wafer 201.

[0079] Based on the technical solutions included in the semiconductor debonding device 100 disclosed in the foregoing embodiments, the present application discloses a specific implementation manner of a semiconductor debonding method.

[0080] Refer Figures 1 to 15 As shown, in this embodiment, the semiconductor debonding method includes the following steps:

[0081] Step S1: Place the second wafer 202 carrying the first wafer 201 on the first positioning mechanism 1;

[0082] Step S2: The first positioning mechanism 1 fixes the second wafer 202, and the rotating mechanism 6 drives the first positioning mechanism 1 to drive the second wafer 202 to rotate a set angle along the axial direction, or the rotating mechanism 6 drives the separating mechanism 4 to rotate a set angle around the first positioning mechanism 1;

[0083] Step S3: The separating mechanism 4 forms a plurality of notches M that are equally spaced circumferentially on the bonding interface layer J; after the rotating mechanism 6a drives the first positioning mechanism 1 to drive the second wafer 202 to rotate a set angle along the axial direction each time, or after the rotating mechanism 6b drives the separating mechanism 4 to rotate a set angle around the first positioning mechanism 1 each time, the separating mechanism 4 pierces into the bonding interface layer J in the horizontal direction, forms a notch M in the bonding interface layer J and then pulls out, so as to form a plurality of notches M that are equally spaced circumferentially on the bonding interface layer J.

[0084] Step S4: The second positioning mechanism 5 fixes the second wafer 202;

[0085] Step S5: The lifting mechanism 3 drives the first wafer 201 and / or the second wafer 202 to move longitudinally to completely separate the first wafer 201 from the second wafer 202. The mechanical force applied by the lifting mechanism 3 first acts on the notch M, and the adhesion weak area at the notch M is preferentially stressed, and the separation force uniformly diffuses from the notch M to the surrounding until it covers the entire bonding interface layer J, so that the separation force is evenly distributed on the bonding interface layer J, avoiding local stress concentration, thereby ensuring the smooth separation of the first wafer 201 and the second wafer 202.

[0086] This semiconductor debonding method forms a plurality of notches M that are equally spaced circumferentially on the bonding interface layer J to weaken the adhesion force of the bonding interface layer J, reduce the mechanical force required to finally completely separate the first wafer 201 from the second wafer 202, and make the stress of the bonding interface layer J between the first wafer 201 and the second wafer 202 evenly distributed to avoid stress concentration. During the process of separating the first wafer 201 and the second wafer 202, the lifting mechanism 3 only needs to apply a small mechanical force to complete the complete separation of the first wafer 201 and the second wafer 202, thereby avoiding applying too large a mechanical force to the first wafer 201, reducing the risk of cracking of the first wafer 201 during the debonding process, and reducing the fragment rate.

[0087] The series of detailed descriptions listed above are only specific descriptions of the feasible implementation manners of the present invention, and they are not intended to limit the protection scope of the present invention. Any equivalent implementation manners or modifications made without departing from the technical spirit of the present invention should be included within the protection scope of the present invention.

[0088] For those skilled in the art, it is obvious that the present invention is not limited to the details of the above-described exemplary embodiments, and the present invention can be implemented in other specific forms without departing from the spirit or basic characteristics of the present invention. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-limiting. The scope of the present invention is defined by the appended claims rather than the above description. Therefore, all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be included within the present invention. Any reference signs in the claims should not be construed as limiting the claimed invention.

[0089] In addition, it should be understood that although this specification is described according to embodiments, not every embodiment only contains an independent technical solution. This narrative manner of the specification is only for clarity. Those skilled in the art should regard the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A semiconductor debonding device, characterized in that: include: A first positioning mechanism, a second positioning mechanism, a separation mechanism, a rotation mechanism and a lifting mechanism; The first positioning mechanism fixes the second wafer, and the separation mechanism penetrates into the bonding interface layer formed between the first wafer and the second wafer in a horizontal direction to form a notch in a local area of ​​the bonding interface layer; The rotating mechanism drives the first positioning mechanism to drive the second wafer to rotate axially by a set angle, or the rotating mechanism drives the separation mechanism to rotate around the first positioning mechanism by a set angle; After the separation mechanism forms a plurality of notches equally spaced along the circumferential direction on the bonding interface layer, the second positioning mechanism fixes the first wafer, and the lifting mechanism drives the first wafer and / or the second wafer to move longitudinally to completely separate the first wafer from the second wafer.

2. The semiconductor debonding device according to claim 1, characterized in that: The lifting mechanism is configured to drive the second positioning mechanism to move longitudinally; After the separation mechanism forms a plurality of notches equally spaced along the circumferential direction on the bonding interface layer, the second positioning mechanism fixes the first wafer, and the lifting mechanism drives the second positioning mechanism to drive the first wafer to rise longitudinally relative to the second wafer, so as to completely separate the first wafer from the second wafer.

3. The semiconductor debonding device according to claim 1, characterized in that: The lifting mechanism is configured to drive the first positioning mechanism to move longitudinally; After the separation mechanism forms a plurality of notches equally spaced along the circumferential direction on the bonding interface layer, the first wafer is fixed by the second positioning mechanism, and the lifting mechanism drives the first positioning mechanism to drive the second wafer to descend longitudinally relative to the first wafer, so as to completely separate the first wafer from the second wafer.

4. The semiconductor debonding device according to claim 1, characterized in that: The lifting mechanism is configured to respectively drive the second positioning mechanism and the first positioning mechanism to move longitudinally; After the separation mechanism forms a plurality of notches equally spaced along the circumferential direction on the bonding interface layer, the second positioning mechanism fixes the first wafer, the lifting mechanism drives the second positioning mechanism to drive the first wafer to rise longitudinally relative to the second wafer, and the lifting mechanism drives the first positioning mechanism to drive the second wafer to descend longitudinally relative to the first wafer, so as to completely separate the first wafer from the second wafer.

5. The semiconductor debonding device according to any one of claims 1 to 4, characterized in that: The first positioning mechanism is configured as a clamping device for clamping an edge of the second wafer, or the first positioning mechanism is configured as a vacuum adsorption device for adsorbing a surface of the second wafer.

6. The semiconductor debonding device according to any one of claims 1 to 4, characterized in that: The second positioning mechanism is configured as a clamping device for clamping an edge of the first wafer, or the second positioning mechanism is configured as a vacuum adsorption device for adsorbing a surface of the first wafer.

7. The semiconductor debonding device according to claim 6, characterized in that: The clamping device comprises: an opening and closing driving unit, and two clamping members which are controlled by the opening and closing driving unit to move closer to or farther from each other so as to clamp or release the edge of the first wafer.

8. The semiconductor debonding device according to claim 1, characterized in that: The separation mechanism comprises: a piercing member and a horizontal displacement driving unit for driving the piercing member to move in a horizontal direction to pierce the bonding interface layer.

9. The semiconductor debonding device according to claim 1, characterized in that: The rotating mechanism is configured to drive the separation mechanism to rotate around the first positioning mechanism by a set angle; The rotating mechanism includes: an annular guide rail coaxially arranged on the outside of the first positioning mechanism, a movable block movably connected to the annular guide rail and configured with the separation mechanism, and an annular displacement driving unit that drives the movable block to move along the annular guide rail to drive the separation mechanism to rotate around the first positioning mechanism at a set angle.

10. The semiconductor debonding device according to claim 7, characterized in that: The clamping device further comprises: a horizontal displacement guide and a guide member respectively arranged on the two clamping members, wherein the guide member extends toward the horizontal displacement guide member and is movably connected to the horizontal displacement guide member to guide the two clamping members to perform linear motion along the horizontal direction.

11. A semiconductor debonding method, characterized in that: The steps include: Step S1, placing the second wafer carrying the first wafer on a first positioning mechanism; Step S2, the first positioning mechanism fixes the second wafer, the rotating mechanism drives the first positioning mechanism to drive the second wafer to rotate axially by a set angle, or the rotating mechanism drives the separation mechanism to rotate around the first positioning mechanism by a set angle; Step S3, the separation mechanism forms a plurality of notches equally spaced along the circumferential direction on the bonding interface layer; Step S4, the second positioning mechanism fixes the second wafer; Step S5: The lifting mechanism drives the first wafer and / or the second wafer to move longitudinally to completely separate the first wafer from the second wafer.

Images