Low-power-consumption diamond transistor and preparation method thereof

Abstract

The invention discloses a low-power-consumption diamond transistor and a preparation method thereof, and aims to solve the problems that an existing metal-oxide-semiconductor field effect transistor is high in power consumption, and a conducting channel on the surface of diamond is fragile and easy to damage. According to the low-power-consumption diamond transistor, the diamond substrate is subjected to hydrotreating through the hydrogen plasma, so that the hydrogen terminal surface is formed on the diamond substrate, the conducting channel is formed after the hydrogen terminal surface is in contact with air, and the source electrode and the drain electrode are arranged on the diamond substrate with the hydrogen terminal. A ferroelectric medium layer is deposited on a diamond substrate with a hydrogen terminal at room temperature by adopting an electron beam evaporation process, and a grid electrode is arranged on the ferroelectric medium layer. The electron beam evaporation process is adopted, the ferroelectric material deposited at the room temperature has excellent ferroelectric characteristics, a negative capacitance effect can be generated, subthreshold swing lower than the theoretical limit and lower turn-off current are achieved, and therefore the power consumption of the transistor is effectively reduced.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor devices, and particularly relates to a low-power diamond transistor and a preparation method thereof. Background Art

[0002] With the rapid development of consumer electronics and the Internet of Things, the integration degree of chips has been continuously improved, the size of transistors has been continuously reduced along Moore's law, and the power consumption of chips has become an urgent problem to be solved. However, due to the small bandgap width, traditional silicon-based materials and emerging two-dimensional materials cannot effectively limit the off-state current of transistors at nodes below 3 nm. At the same time, the subthreshold swing of traditional metal-oxide-semiconductor field-effect transistors is thermodynamically limited and cannot be less than 60 mV / dec, that is, the Boltzmann limit. According to power consumption analysis, the off-state current and the subthreshold swing are the main sources of chip power consumption. Therefore, these two points hinder the further reduction of power consumption and cannot meet the requirements of high-integrated circuits for power consumption reduction.

[0003] Diamond has an ultra-wide bandgap width of 5.5 eV and a high breakdown field strength of more than 10 MV / cm, and can ensure an extremely small off-state leakage current even in environments such as small nodes, high temperature, and high voltage. It is an ideal channel material for realizing low-power transistors in the post-Moore era. In addition, by using a ferroelectric material as the gate dielectric material, the surface potential of the channel can be amplified by the negative capacitance effect, breaking through the Boltzmann limit. However, the surface conductive channel of diamond is relatively fragile and is easily damaged by the high temperature, high energy, plasma and other environments during the deposition process of the gate dielectric, thus damaging the conductivity. Therefore, depositing a high-quality ferroelectric gate dielectric material while ensuring the conductivity of the diamond surface channel still faces challenges.

[0004] In view of the above problems, in order to meet the requirements of high-integrated circuits for low-power transistors, a preparation method of a ferroelectric material with a simple preparation method, negligible influence on the substrate, and easy to scale up needs to be developed. Summary of the Invention

[0005] The purpose of the present invention is to solve the problems that the existing metal-oxide-semiconductor field-effect transistors have high power consumption and the surface conductive channel of diamond is relatively fragile and easily damaged, and to provide a low-power diamond transistor. The negative capacitance effect of the ferroelectric material deposited at room temperature realizes an ultra-steep subthreshold swing, breaking through the Boltzmann limit. The room-temperature deposition and the need for no annealing do not damage the conductive channel. The ferroelectric gate dielectric material is also used to construct a large barrier height between the gate and the channel, combined with the ultra-wide bandgap of diamond to achieve an extremely low off-state current, thereby reducing the power consumption of the transistor.

[0006] The low-power diamond transistor of the present invention includes a diamond substrate, a source electrode, a drain electrode, a ferroelectric dielectric layer, and a gate electrode. The diamond substrate is hydrogenated by hydrogen plasma to form a hydrogen-terminated surface on the diamond substrate. After the hydrogen-terminated surface contacts air, a conductive channel is formed. The source electrode and the drain electrode are arranged on the diamond substrate with the hydrogen-terminated surface. The ferroelectric dielectric layer is deposited on the diamond substrate with the hydrogen-terminated surface at room temperature by an electron beam evaporation process, and the gate electrode is arranged on the ferroelectric dielectric layer.

[0007] The preparation method of the low-power diamond transistor of the present invention is realized according to the following steps:

[0008] I. Pretreat and clean the diamond substrate to obtain a pretreated diamond substrate;

[0009] II. Place the pretreated diamond substrate into a microwave plasma chemical vapor deposition device, and hydrogenate the diamond substrate by hydrogen plasma. After contacting air, a conductive channel is formed to obtain a diamond substrate with a conductive channel;

[0010] III. Use a lithography process to form source electrode patterns and drain electrode patterns on the conductive channel of the diamond substrate, then deposit metal electrodes, and use a lift-off process to form the source electrode and the drain electrode on the conductive channel respectively to obtain a diamond substrate with the source electrode and the drain electrode;

[0011] IV. Use a lithography process to form a photoresist protection layer on the conductive channel between the source electrode and the drain electrode, use oxygen plasma to perform oxygen-terminated treatment on the exposed surface of the diamond substrate, so as to perform surface device electrical isolation, and then remove the photoresist protection layer by acetone to obtain an electrically isolated device;

[0012] V. Between the source electrode and the drain electrode of the electrically isolated device, deposit a ferroelectric dielectric layer at room temperature by an electron beam evaporation process to obtain a device with a ferroelectric dielectric layer;

[0013] VI. Use a lithography process to form a gate electrode pattern on the ferroelectric dielectric layer, deposit the gate electrode, so as to obtain a low-power diamond transistor.

[0014] The low-power diamond transistor and its preparation method of the present invention have the following beneficial effects:

[0015] The present invention adopts an electron beam evaporation process. The ferroelectric material deposited at room temperature has a large number of oxygen vacancies due to oxygen loss during the deposition process, thus having excellent ferroelectric properties and generating a negative capacitance effect, which enables the transistor to achieve an ultra-steep subthreshold swing and break through the Boltzmann limit. The room-temperature deposition of the ferroelectric gate dielectric layer and the need for no annealing do not damage the conductive channel, the preparation method is simple, scalable, and has universality, and can be transplanted to other semiconductor channel materials. The ferroelectric dielectric layer is also used to construct a large barrier height between the gate and the channel, and combined with the ultra-wide bandgap of diamond, an extremely low off-current is achieved. The diamond transistor prepared by the present invention can achieve a subthreshold swing lower than the theoretical limit and a lower off-current, thereby effectively reducing the power consumption of the transistor. Description of the Drawings

[0016] Figure 1 is a schematic structural diagram of the low-power diamond transistor of the present invention;

[0017] Figure 2 is a schematic diagram of the preparation method of the low-power diamond transistor of the present invention;

[0018] Figure 3 is a comparison diagram of the conductivity of the conductive channel of the diamond substrate before and after the deposition of the ferroelectric dielectric layer;

[0019] Figure 4 is the output curve diagram of the low-power diamond transistor in Example 1;

[0020] Figure 5 is the transfer curve diagram of the low-power diamond transistor in Example 1;

[0021] Figure 6 is the relationship diagram between the subthreshold swing and the current of the low-power diamond transistor in Example 1;

[0022] Figure 7 is the transfer curve diagram of the low-power diamond transistor in Example 2;

[0023] Figure 8 is the transfer curve diagram of the diamond transistor prepared in Comparative Example 1. Detailed Description of the Invention

[0024] The following further elaborates on the embodiments of the present invention in conjunction with the drawings and examples. It can be understood that the specific embodiments described herein are only used to explain the embodiments of the present invention, rather than limiting the embodiments of the present invention. Additionally, it should be noted that for the sake of description, only parts related to the embodiments of the present invention are shown in the drawings, rather than all the structures.

[0025] In addition, the terms "first", "second", "third", etc. in the specification and claims are only used for the purpose of distinguishing the description of the same technical features, and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features, nor necessarily describing the order or time sequence. The terms can be interchanged under appropriate circumstances. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features.

[0026] Specific Embodiment 1: The low-power diamond transistor of this embodiment includes a diamond substrate 1, a source electrode 3, a drain electrode 4, a ferroelectric dielectric layer 5, and a gate electrode 6. The diamond substrate 1 is hydrogenated by hydrogen plasma to form a hydrogen-terminated surface on the diamond substrate 1. After the hydrogen-terminated surface contacts air, a conductive channel 2 is formed. The source electrode 3 and the drain electrode 4 are disposed on the diamond substrate 1 with a hydrogen-terminated surface. The ferroelectric dielectric layer 5 is deposited on the diamond substrate 1 with a hydrogen-terminated surface at room temperature by an electron beam evaporation process, and the gate electrode 6 is disposed on the ferroelectric dielectric layer 5.

[0027] In this embodiment, the source electrode and the drain electrode are disposed at both ends of the conductive channel; the ferroelectric dielectric layer is located between the source electrode and the drain electrode.

[0028] In this embodiment, the root mean square surface roughness of the diamond substrate is less than 0.5 nm, the Raman full width at half maximum is less than 2 cm -1 , and the XRD rocking curve full width at half maximum is less than 0.1°. A suitable diamond substrate is selected to meet the ultra-wide bandgap and high breakdown field strength, and is conducive to the formation of a hydrogen-terminated surface.

[0029] Specific Embodiment 2: The difference between this embodiment and Specific Embodiment 1 is that the hole density of the conductive channel 2 is 1×10 12 -1×10 14 cm -2 , and the mobility is 50 - 200 cm 2 / (V·s).

[0030] Specific Embodiment 3: The difference between this embodiment and Specific Embodiment 1 or 2 is that the material of the ferroelectric dielectric layer 5 is ZrO 2 or HfO 2 .

[0031] Specific Embodiment 4: The difference between this embodiment and any one of Specific Embodiments 1 to 3 is that the thickness of the ferroelectric dielectric layer 5 is 30 - 100 nm.

[0032] Specific Embodiment 5: The preparation method of the low-power diamond transistor of this embodiment is implemented according to the following steps:

[0033] 1. Pretreat and clean the diamond substrate to obtain a pretreated diamond substrate;

[0034] II. Place the pretreated diamond substrate into a microwave plasma chemical vapor deposition device, and use hydrogen plasma to perform hydrogenation treatment on the diamond substrate. After contacting air, a conductive channel is formed to obtain a diamond substrate with a conductive channel.

[0035] III. Use a lithography process to form source and drain patterns on the conductive channel of the diamond substrate, then deposit metal electrodes, and use a lift-off process to form the source and drain on the conductive channel respectively, obtaining a diamond substrate with a source and a drain.

[0036] IV. Use a lithography process to form a photoresist protection layer on the conductive channel between the source and the drain, and use oxygen plasma to perform oxygen termination treatment on the exposed surface of the diamond substrate, thereby achieving electrical isolation of the surface device. Then remove the photoresist protection layer with acetone to obtain an electrically isolated device.

[0037] V. Between the source and the drain of the electrically isolated device, use an electron beam evaporation process to deposit a ferroelectric dielectric layer at room temperature to obtain a device with a ferroelectric dielectric layer.

[0038] VI. Use a lithography process to form a gate pattern on the ferroelectric dielectric layer, and deposit a gate to obtain a low-power diamond transistor.

[0039] Specific Embodiment VI: The difference between this embodiment and Specific Embodiment V is that in Step I, the pretreatment of the diamond substrate is to place the diamond substrate in a mixed solution of concentrated H 2 SO 4 and concentrated HNO 3 , heat it to boiling, and process for 0.5 - 2 hours.

[0040] Specific Embodiment VII: The difference between this embodiment and Specific Embodiment V or VI is that in Step II, place the pretreated diamond substrate into a microwave plasma chemical vapor deposition device, control the hydrogen flow rate to be 200 - 400 sccm, the treatment temperature to be 650 - 850 °C, the treatment time to be 10 - 60 min, and then cool it to room temperature in a hydrogen atmosphere to complete the hydrogenation treatment.

[0041] Specific Embodiment VIII: The difference between this embodiment and any one of Specific Embodiments V to VII is that the process of forming the source and the drain in Step III is as follows:

[0042] Spin-coat and dry photoresist on the conductive channel of the diamond substrate, use a lithography machine to expose at the preset positions of the source and the drain, develop in a developer solution to form source and drain patterns, then place it in an electron beam evaporation device to deposit the source and the drain. After deposition, soak it in acetone, take it out after soaking, and use ultrasonic peeling to remove the source and the drain in the unexposed area, thereby forming the source and the drain on the conductive channel.

[0043] Embodiment 9 in detail: The difference between this embodiment and one of Embodiments 5 to 8 is that in Step 3, the materials of the source electrode and the drain electrode are palladium or iridium.

[0044] Embodiment 10 in detail: The difference between this embodiment and one of Embodiments 5 to 9 is that in Step 6, a gate pattern is formed on the ferroelectric dielectric layer by a photolithography process, and the process of depositing the gate is as follows:

[0045] Spin-coat a photoresist on the ferroelectric dielectric layer and dry it. Use a lithography machine to expose at the preset position of the gate, develop in a developer solution to form a gate pattern, and then place it in an electron beam evaporation device to deposit the gate.

[0046] After the deposition of this embodiment is completed, soak it in acetone, take it out after soaking, and ultrasonically strip the gate material in the unexposed area.

[0047] Embodiment 11 in detail: The difference between this embodiment and one of Embodiments 5 to 10 is that in Step 6, the material of the gate is titanium, platinum, zirconium, tungsten, nickel, yttrium, bismuth, indium or scandium.

[0048] Example 1: The preparation method of the low-power diamond transistor in this example is implemented according to the following steps:

[0049] Step S1: Pretreat and clean the diamond substrate 1, and the specific process is as follows:

[0050] Place the diamond substrate 1 with a thickness of 300 μm in a mixed solution of concentrated H 2 SO 4 and concentrated HNO 3 (the mass concentration of concentrated H 2 SO 4 is 98%, and the mass concentration of concentrated HNO 3 is 68%). The diamond is grown by microwave plasma chemical vapor deposition. The volume ratio of concentrated H 2 SO 4 and concentrated HNO 3 is 1:1. Heat it to boiling and process for 1 hour to remove the impurities on the diamond surface and form an oxygen-terminated surface. Then place it in acetone, deionized water, and absolute ethanol in sequence and ultrasonically clean for 30 minutes each. After cleaning, a diamond substrate is obtained. The root mean square surface roughness of the diamond substrate is less than 0.5 nm, the Raman half-peak width is less than 2 cm -1 , and the XRD rocking curve half-peak width is less than 0.1°.

[0051] Step S2: Place the pretreated diamond substrate into a microwave plasma chemical vapor deposition device, and perform hydrogenation treatment on the diamond substrate using a hydrogen plasma to form a conductive channel after contacting air. The specific process is as follows:

[0052] Place the cleaned diamond substrate 1 into a microwave plasma chemical vapor deposition device, and perform hydrogenation treatment using hydrogen plasma. Keep the hydrogen flow rate at 300 sccm, adjust the chamber pressure and microwave power to maintain the temperature at 650 °C, the treatment time is 30 min, and cool it to room temperature in a hydrogen atmosphere, so as to form a hydrogen-terminated surface on the diamond substrate 1, and form a conductive channel 2 after contacting air.

[0053] Step S3: Use a photolithography process to form source and drain patterns on the conductive channel 2 of the diamond substrate, then deposit metal, and use a lift-off process to form a source electrode 3 and a drain electrode 4 at both ends of the conductive channel 2 to obtain a diamond substrate with source and drain electrodes. The specific process is as follows:

[0054] Spin-coat a layer of AZ5214E photoresist on the surface of the diamond substrate with the conductive channel 2 and dry it at 95 °C for 90 seconds. Use an ultraviolet lithography machine to expose through a mask at the preset positions of the source electrode 3 and the drain electrode 4. After developing in a developer for 45 s, source and drain patterns are formed. Then place it in an electron beam evaporation device, deposit 100 nm of gold according to the source and drain patterns. After the deposition is completed, soak it in acetone for 30 min, take it out after soaking, and use ultrasonic waves to strip the gold in the unexposed area to form the source electrode 3 and the drain electrode 4 on the conductive channel 2.

[0055] Step S4: Use a photolithography process to form a photoresist protection layer on the conductive channel between the source and drain electrodes, and use oxygen plasma to perform oxygen termination treatment on the exposed surface of the diamond substrate, so as to perform electrical isolation of surface devices. The specific process is as follows:

[0056] Spin-coat a layer of AZ6112 type photoresist protection layer on the surface of the diamond substrate with the conductive channel 2 and dry it at 105 °C for 90 seconds. Use an ultraviolet lithography machine to expose the area outside the conductive channel 2. After developing in a developer for 60 s, a photoresist protection layer of the conductive channel is formed. Use oxygen plasma to perform oxygen termination treatment on the exposed surface of the diamond substrate 1, so as to perform electrical isolation of surface devices, and then remove the photoresist protection layer with acetone.

[0057] Step S5: Deposit a ferroelectric dielectric layer at room temperature between the source and drain electrodes of the electrically isolated device. The specific process is as follows:

[0058] Use an electron beam evaporation process to deposit 50 nm of ZrO 2 on the surface of the electrically isolated device at room temperature to obtain a ferroelectric dielectric layer 5. The parameters of the electron beam evaporation process are: the vacuum degree is below 8×10 -4 Pa, the evaporation voltage is 6 kV, and the evaporation beam current is 0.55 A to obtain a ferroelectric dielectric layer 5.

[0059] Step S6: Form a gate pattern on the ferroelectric dielectric layer using a lithography process and deposit a gate. The specific process is as follows:

[0060] Spin-coat a layer of AZ5214E photoresist on the surface of the device with the ferroelectric dielectric layer and dry it at 95 °C for 90 seconds. Use an ultraviolet lithography machine to expose the preset position of gate 6 through a mask, develop it in a developer for 45 s to form a gate pattern, then place it in an electron beam evaporation device to deposit gate metal aluminum. After depositing 100 nm of aluminum, take it out, soak it in acetone for 30 min and then take it out. Use ultrasonic stripping to remove the gate material in the unexposed area to obtain gate 6, and a low-power diamond transistor is prepared.

[0061] This embodiment provides a method for preparing a low-power diamond transistor. Figure 1 is a schematic structural diagram of a low-power diamond transistor. The low-power diamond transistor includes a diamond substrate 1, a conductive channel 2, a source electrode 3, a drain electrode 4, a ferroelectric dielectric layer 5, and a gate 6. Among them, a conductive channel 2 is formed on the diamond substrate 1; source electrodes 3 and drain electrodes 4 are arranged on both sides of the conductive channel 2; a ferroelectric dielectric layer 5 and a gate 6 are arranged from bottom to top between the source electrode 3 and the drain electrode 4. Figure 2 is a schematic diagram of the method for preparing a low-power diamond transistor. Please refer to Figure 1-2 .

[0062] Example 2: The difference between this embodiment and Embodiment 1 is that in step S5, an electron beam evaporation method is used to deposit a 50 nm HfO 2 ferroelectric dielectric layer.

[0063] Comparative Example 1: The difference between this embodiment and Embodiment 1 is that in step S5, an electron beam evaporation method is used to deposit a 50 nm SiO 2 dielectric layer.

[0064] Figure 3 shows a conductivity comparison diagram of the conductive channel of the diamond substrate before and after the deposition of the ferroelectric dielectric layer. Before and after the deposition of the ferroelectric dielectric layer, the conductivity of the channel on the surface of the diamond substrate has no obvious change, indicating that the method of depositing the ferroelectric dielectric layer by electron beam evaporation without heating can maintain the original characteristics of the conductive channel, and the preparation method is simple, scalable, and universal, and can be further transplanted to other semiconductor channel materials.

[0065] Figure 4 shows the output curve diagram of the low-power diamond transistor prepared in Embodiment 1. In the saturation region, the drain current decreases as the drain voltage increases, indicating the occurrence of the negative capacitance effect, which proves that the zirconia layer deposited by electron beam evaporation has excellent ferroelectric characteristics and will exhibit the negative capacitance effect during polarization reversal, thereby amplifying the surface potential, so that the transistor can achieve an ultra-steep subthreshold swing and break through the Boltzmann limit.

[0066] Figure 5 The transfer curve of the low-power diamond transistor prepared in Example 1 is shown, indicating that the leakage current in the off state is <1 fA / μm, far lower than that of silicon-based materials and two-dimensional materials. This is mainly because the deposited ferroelectric dielectric layer helps to construct a large barrier height between the gate and the channel. In addition, the ultra-wide bandgap of diamond is also an important reason for achieving extremely low leakage current. In addition, the subthreshold swing of the low-power diamond transistor prepared in Example 1 is 15 mV / dec, far less than the Boltzmann limit of 60 mV / dec. This is mainly because the deposited ferroelectric dielectric layer has excellent ferroelectric properties, and a negative capacitance effect will occur during polarization reversal, thus amplifying the surface potential, enabling the transistor to achieve an ultra-steep subthreshold swing and break through the Boltzmann limit. Figure 6 The relationship between the subthreshold swing and current of the low-power diamond transistor prepared in Example 1 is shown, indicating that the current range with a subthreshold swing less than the Boltzmann limit of 60 mV / dec exceeds six orders of magnitude. Such a low off-current and subthreshold swing prove that the fabricated transistor can achieve low power consumption.

[0067] Figure 7 The transfer curve of the low-power diamond transistor prepared in Example 2 is shown. The leakage current in the off state is <2 fA / μm, and the subthreshold swing is 12.5 mV / dec, also far less than the Boltzmann limit of 60 mV / dec. This shows that the fabricated transistor can achieve low power consumption.

[0068] Figure 8 The transfer curve of the diamond transistor prepared in Comparative Example 1 is shown. Since the fabricated dielectric layer does not have ferroelectric properties and has a small dielectric constant, the off-current of the fabricated transistor is about three orders of magnitude higher than that of the low-power diamond transistor prepared in Example 1, and the subthreshold swing is also much larger than the Boltzmann limit, making it impossible for the transistor to meet the requirements of low power consumption.

Claims

1. A low power consumption diamond transistor, characterized in that The low-power diamond transistor comprises a diamond substrate (1), a source electrode (3), a drain electrode (4), a ferroelectric dielectric layer (5) and a gate electrode (6). The diamond substrate (1) is hydrogenated by hydrogen plasma to form a hydrogen terminal surface on the diamond substrate (1). The hydrogen terminal surface forms a conductive channel (2) after contacting air. The source electrode (3) and the drain electrode (4) are arranged on the diamond substrate (1) with the hydrogen terminal. The ferroelectric dielectric layer (5) is deposited on the diamond substrate (1) with the hydrogen terminal at room temperature by electron beam evaporation process. The gate electrode (6) is arranged on the ferroelectric dielectric layer (5).

2. The low power consumption diamond transistor according to claim 1, characterized in that The hole density of the conductive channel (2) is 1×10 12 -1×10 14 cm -2 , mobility is 50-200cm 2 / (V·s).

3. The low power consumption diamond transistor according to claim 1, characterized in that The material of the ferroelectric dielectric layer (5) is ZrO2 or HfO2.

4. The low power consumption diamond transistor according to claim 1, characterized in that The thickness of the ferroelectric dielectric layer (5) is 30-100 nm.

5. The method for preparing a low-power diamond transistor as claimed in claim 1, characterized in that The preparation method is achieved by following the steps:

1. Pre-treating and cleaning the diamond substrate to obtain a pre-treated diamond substrate; 2. Placing the pretreated diamond substrate into a microwave plasma chemical vapor deposition device, hydrogenating the diamond substrate using hydrogen plasma, and forming a conductive channel after contacting the air, thereby obtaining a diamond substrate with a conductive channel; 3. Forming source and drain patterns on the conductive channel of the diamond substrate by photolithography, depositing metal electrodes, and forming source and drain electrodes on the conductive channel by lift-off, thereby obtaining a diamond substrate with source and drain electrodes; Fourth, using a photolithography process to form a photoresist protective layer on the conductive channel between the source and the drain, using oxygen plasma to perform oxygen termination treatment on the exposed surface of the diamond substrate, and then removing the photoresist protective layer with acetone to obtain an electrically isolated device; 5. depositing a ferroelectric dielectric layer between the source and drain of the electrically isolated device at room temperature by an electron beam evaporation process to obtain a device with a ferroelectric dielectric layer; 6. Use photolithography to form a gate pattern on the ferroelectric dielectric layer and deposit the gate to obtain a low-power diamond transistor.

6. The method for preparing a low power consumption diamond transistor according to claim 5, characterized in that In step 2, the pretreated diamond substrate is placed in a microwave plasma chemical vapor deposition device, the hydrogen flow rate is controlled to be 200-400sccm, the treatment temperature is 650-850°C, the treatment time is 10-60min, and then cooled to room temperature in a hydrogen atmosphere to complete the hydrogenation treatment.

7. The method for preparing a low-power diamond transistor according to claim 5, characterized in that The process of forming the source and drain in step 3 is as follows: The photoresist is spin-coated on the conductive channel of the diamond substrate and dried, and the preset positions of the source and drain are exposed by a photolithography machine, developed in a developer to form a source pattern and a drain pattern, and then placed in an electron beam evaporation device to deposit the source and drain. After the deposition is completed, it is immersed in acetone, taken out after immersion, and the source and drain in the unexposed area are peeled off by ultrasound, thereby forming the source and drain on the conductive channel.

8. The method for preparing a low-power diamond transistor according to claim 5, characterized in that In step 3, the source and drain are made of palladium or iridium.

9. The method for preparing a low-power diamond transistor according to claim 5, characterized in that In step six, a gate pattern is formed on the ferroelectric dielectric layer using a photolithography process. The process of depositing the gate is as follows: The photoresist is spin-coated on the ferroelectric dielectric layer and dried, and a preset position of the gate is exposed using a photolithography machine, developed in a developer to form a gate pattern, and then placed in an electron beam evaporation device to deposit the gate.

10. The method for preparing a low power consumption diamond transistor according to claim 5, characterized in that In step six, the material of the gate is titanium, platinum, zirconium, tungsten, nickel, yttrium, bismuth, indium or scandium.

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