HfO2 dielectric film and method for lossless transfer of HfO2 dielectric film

Abstract

The invention relates to the technical field of inorganic semiconductor nanomaterials, in particular to an HfO2 dielectric film and a method for losslessly transferring the HfO2 dielectric film, and the HfO2 dielectric film is prepared on a sacrificial substrate and then transferred through Van der Waals. Wherein the fluorine crystal mica is used as a sacrificial substrate for growing HfO2, an HfO2 thin film is grown through atomic layer deposition (ALD), and the HfO2 and the mica are separated by utilizing Van der Waals force of dielectric and the substrate. Compared with the prior art, the transfer method provided by the invention not only has no influence on the two-dimensional material, but also has no influence on dielectrics.

Description

Technical Field

[0001] The present invention relates to the technical field of inorganic semiconductor nanomaterials, and particularly to a HfO 2 dielectric film and a method for non-destructively transferring the HfO 2 dielectric film. Background Art

[0002] The property of the two-dimensional material surface without dangling bonds has a certain impact on the quality of the directly grown dielectric layer. Since there are no dangling bonds on the two-dimensional material surface, it is impossible to deposit a high-quality gate dielectric layer using the traditional atomic layer deposition process, resulting in interface states and an equivalent oxide thickness (EOT) much higher than those of silicon-based CMOS transistors. This indicates that when directly growing a dielectric layer on the two-dimensional material surface, due to the lack of dangling bonds, it is difficult for traditional deposition techniques to achieve a high-quality dielectric layer. The dangling-bond-free surface of the two-dimensional material makes it difficult for precursors to adhere to the 2D material, resulting in a rough dielectric layer surface and the formation of pinholes, and a decrease in the gate control ability. This shows that when directly growing a dielectric layer on the two-dimensional material, due to the surface characteristics, the quality of the dielectric layer may be poor, affecting the device performance.

[0003] To overcome the dielectric layer integration problem caused by the lack of dangling bonds on the two-dimensional material surface, the research team designed and constructed a new type of composite dielectric material. The research team used the inorganic molecular crystal Sb 2 O 3 as a buffer layer to construct an Sb 2 O 3 / HfO 2 composite dielectric layer, and achieved the large-scale integration of a dielectric layer with both high-quality interface and high dielectric properties in two-dimensional transistors. This research progress shows that the growth quality of the dielectric layer on two-dimensional materials can be improved through innovative methods. The relevant research team utilized the van der Waals interaction between the two-dimensional material and the molecule, and used a 0.3-nanometer-thick monolayer molecular crystal as the interface layer to successfully achieve a high-quality and ultra-thin high-κ dielectric layer deposition technology on the two-dimensional material. This further confirms that through specific technical means, high-quality dielectric layer growth can be achieved on the two-dimensional material surface.

[0004] However, although the use of the buffer layer can further deposit the dielectric, it also increases the defects of the interface states, resulting in a decrease in the transistor performance. Therefore, further exploration of dielectric integration is needed. Summary of the Invention

[0005] The purpose of the present invention is to overcome the defects of the above-mentioned existing technologies and provide a HfO 2 dielectric film and a method for non-destructively transferring the HfO 2 dielectric film. The transfer method of the present invention has no impact on the two-dimensional material and also has no impact on the dielectric itself.

[0006] The purpose of the present invention can be achieved by the following technical solutions:

[0007] By directly depositing HfO with ALD 2 The roughness (Ra) before and after the transfer is compared to show the feasibility of the transfer method.

[0008] Secondly, through the influence on two-dimensional materials, Raman characterization and transfer curve test, it is shown that the transferred HfO 2 The dielectric film will not dope or damage the two-dimensional material.

[0009] Again, by different growth of HfO 2 The capacitance and breakdown voltage-leakage current characteristics before and after the transfer are compared, which shows the universality of the transfer method.

[0010] The first aspect of the present invention provides a lossless transfer of HfO 2 A method for producing a dielectric film, comprising the steps of:

[0011] S1: Deposition of HfO on exfoliated mica with a clean and flat surface using thermal evaporation atomic layer deposition (ALD) 2 The dielectric layer is transformed from a CVD-like growth mode to an ALD growth mode by regulating the precursor flow, reaction gas pressure, and reaction temperature to obtain a clean and flat HfO 2 interface and optimal film growth rate to prepare high-quality HfO 2 Dielectric films;

[0012] S2: HfO after growth 2 The dielectric layer surface is spin-coated with a transfer support solution, using a mica substrate and HfO 2 The van der Waals force between the dielectric layers is separated in deionized water, and the separation process ensures that HfO 2 The morphology of the dielectric film does not change;

[0013] S3: HfO 2 After the dielectric layer is separated from the mica substrate, the HfO 2 The dielectric film was placed in deionized water and the deionized water was changed several times for cleaning;

[0014] S4: The cleaned HfO 2 The dielectric film is transferred to the target substrate.

[0015] Further, in S1, HfO is deposited on the exfoliated mica having a clean and flat surface by thermal evaporation atomic layer deposition (ALD). 2 The specific process of the dielectric layer includes:

[0016] A precursor gas is introduced into a reaction chamber containing a substrate. The precursor gas is tetrakis(ethylmethylamido)hafnium (TEMAHf) or tetrakis(diethylamido)hafnium (TDEAH), causing it to adsorb or chemically react with the surface of the substrate;

[0017] It is flushed with an inert gas to remove unreacted precursors and by-products;

[0018] H 2 O gas is introduced, causing it to chemically react with the precursor adsorbed on the surface of the substrate to form a HfO 2 coating;

[0019] It is flushed again with an inert gas to remove excess gas and by-products, completing one ALD cycle;

[0020] Repeat 3 - 10 cycles to obtain a HfO 2 dielectric film.

[0021] Further, in S1, the flow rate range of the precursor gas is 10 sccm - 20 sccm, the reaction pressure range is 10 Pa - 150 Pa, and the reaction temperature range is 100 °C - 280 °C.

[0022] Further, in S1, the flow rate range of the H 2 O gas is 10 sccm - 20 sccm, the reaction pressure range is 10 Pa - 150 Pa, and the reaction temperature range is 75 °C - 100 °C.

[0023] Further, in S2, the transfer support solution is an aqueous solution of polymethyl methacrylate (PMMA), and the concentration range of the solution is 30 wt% - 50 wt%;

[0024] In S2, the separation process is carried out in deionized water at a temperature range of 300 °C - 350 °C.

[0025] Further, in S3, the HfO 2 dielectric film is left standing in deionized water for at least 1 hour, and the deionized water is changed at least 3 times.

[0026] Further, in S4, the target substrate is any one of a silicon-based substrate, a gallium nitride substrate, and a silicon carbide substrate.

[0027] Further, after S4, it also includes a step of annealing the HfO 2 dielectric film transferred onto the target substrate. The annealing temperature range is 300 °C - 500 °C, and the annealing time is 120 minutes - 300 minutes.

[0028] Further, in S2, the inert gas is nitrogen or argon, and the gas flow rate during flushing ranges from 80 sccm to 100 sccm.

[0029] The second invention of the present invention provides a HfO 2 dielectric film obtained by the method of non-destructively transferring the dielectric film as described above. 2 The thickness of the HfO 2 dielectric film is 5 nm - 30 nm.

[0030] Compared with the prior art, the present invention has the following beneficial effects:

[0031] The method of non-destructively transferring the HfO 2 dielectric film proposed by the present invention has significant beneficial effects. In terms of dielectric integration, the dielectric transferred by the present invention can be directly put into use, completely solving the problems faced in growing the dielectric layer on the target substrate in the traditional method, and avoiding the problem of poor growth quality caused by the absence of dangling bonds on the surface of two-dimensional materials. Compared with the traditional method using a buffer layer, the present invention not only effectively reduces the interface state defects introduced by the buffer layer and improves the transistor performance, but also greatly improves the dielectric integration and process efficiency by optimizing the preparation and transfer processes, providing a more efficient and high-quality solution for the development of the inorganic semiconductor nanomaterial technology field, and strongly promoting the performance improvement and large-scale production of devices in related fields. Description of the Drawings

[0032] Figure 1 It is a schematic process diagram for growing, transferring, and cleaning the dielectric film in deionized water;

[0033] Figure 2 It is an optical picture after transferring the dielectric at a scale of 50 um;

[0034] Figure 3 a is an atomic force microscope (AFM) image of HfO 2 directly deposited and grown on SiO 2 ; Figure 3 b is an AFM image of HfO 2 transferred onto SiO 2 . (Corresponding to Example 1)

[0035] Figure 4 a is the Raman curve of MoS 2 before and after transfer (the gray solid line is MoS 2 before transfer, and the blue solid line is after transferring HfO 2 ); Figure 4 b is the transfer curve of MoS 2 before and after being protected by the transferred HfO 2 (the red solid line is MoS2 , the blue solid line is the deposition of HfO on this basis 2 )(corresponding to Example 2)

[0036] Figure 5 a is the capacitance-voltage (C-V) curve of HfO before and after transfer (the blue solid line is before transfer, and the red dashed line is after transfer); 2 ; Figure 5 b is the breakdown voltage-leakage current (I-V) curve of HfO before and after transfer (the blue solid line is before transfer, and the red dashed line is after transfer). (corresponding to Example 3) 2 Detailed implementation manners

[0037] Overall, the present invention relates to a transfer method based on van der Waals dielectrics. For the specific process, see Figure 1 . In the present invention, a high-k dielectric thin film is prepared on a sacrificial substrate and then transferred by van der Waals. Among them, fluorophlogopite is used as the sacrificial substrate for growing HfO 2 , and HfO thin film is grown by atomic layer deposition (ALD). The HfO and mica are separated by using the van der Waals force between the dielectric and the substrate. The transfer method of the present invention has no influence on two-dimensional materials and also has no influence on the dielectric itself. 2 2

[0038] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments. In the present technical solution, the preparation means, materials, structures, or composition ratios and other features not clearly described are regarded as common technical features disclosed in the prior art.

[0039] (1) Preparation of the dielectric HfO 2 thin film.

[0040] The atomic layer deposition (ALD) technology adopted in the present invention is an advanced process for precisely controlling thin film deposition, and is particularly suitable for preparing high dielectric constant materials with precise thickness and uniformity. A first precursor gas (tetrakis(ethylmethylamino)hafnium TEMAHf or tetrakis(diethylamino)hafnium TDEAH) is introduced into the substrate, and it adsorbs or chemically reacts with the surface of the substrate. It is rinsed with an inert gas to remove unreacted precursors and by-products. A second precursor gas (H 2 O) is introduced, and it chemically reacts with the first precursor adsorbed on the surface of the substrate to form a HfO 2 coating. It is rinsed with an inert gas again to remove excess gas and by-products, and one ALD cycle is completed.

[0041] By adjusting process parameters such as precursor flow rate, reaction pressure, and reaction temperature, the HfO 2Growth modes of the thin film, including the CVD-like growth mode and the ALD growth mode. Optimizing these parameters can achieve the transition from the CVD-like growth mode to the ALD growth mode and obtain the optimal thin film growth rate.

[0042] (2) Dielectric transfer

[0043] Spin-coat the transfer support solution on the HfO 2 surface. Utilize the van der Waals force between the mica substrate and HfO 2 to separate in deionized water. After HfO 2 is separated from the mica substrate, let HfO 2 stand still in deionized water and replace the deionized water multiple times to wash the separated HfO 2 thin film. Transfer the transferred and washed dielectric thin film onto the target substrate.

[0044] (3) Morphology characterization

[0045] By comparing the atomic force microscopy characterization diagrams of the HfO 2 thin film directly grown on the silicon wafer and the HfO 2 thin film transferred to the silicon wafer, it shows that the dielectric morphology before and after transfer does not change.

[0046] (4) Dielectric test

[0047] Prepare the metal thin film. First, directly deposit the dielectric thin film and then directly fabricate the top electrode metal sheet; second, transfer the peeled dielectric thin film onto the metal thin film and then fabricate the top electrode metal sheet. Compare the changes before and after transfer by testing the capacitance-voltage (C-V) curve and the breakdown voltage-leakage current (I-V) curve.

[0048] Example 1

[0049] 1. Preparation of the dielectric HfO 2 thin film

[0050] Substrate preparation: Select natural fluorophlogopite as the initial substrate, and mechanically peel the mica with a blade to obtain peeled mica with a clean and flat surface. Put the peeled mica into the reaction chamber of the atomic layer deposition (ALD) equipment and evacuate the reaction chamber to make the air pressure in the chamber reach 5×10 -5 Torr to ensure the cleanliness of the reaction environment.

[0051] ALD Deposition Process: Tetrakis(ethylmethylamido)hafnium (TEMAHf), a precursor gas, is introduced into the reaction chamber at a flow rate of 15 sccm for 10 s, allowing it to adsorb or chemically react with the surface of the mica substrate. Subsequently, the reaction chamber is flushed with nitrogen at a flow rate of 200 sccm for 30 s to remove unreacted precursors and by-products. Then, gas H 2 O is introduced at a flow rate of 10 sccm for 5 s, causing it to chemically react with the TEMAHf adsorbed on the substrate surface to form a HfO 2 coating. The reaction chamber is flushed with nitrogen at a flow rate of 200 sccm for 30 s again to remove excess gas and by-products, completing one ALD cycle.

[0052] Growth Mode Regulation: During the deposition process, the reaction temperature is controlled at 250 °C and the reaction pressure is maintained at 1 Torr. By adjusting process parameters such as precursor flow rate, reaction pressure, and reaction temperature, after 200 ALD cycles, the transition from a CVD-like growth mode to an ALD growth mode is achieved, and finally a high-quality HfO 2 dielectric film with a thickness of approximately 20 nm and a surface roughness less than 0.5 nm is obtained.

[0053] 2. Dielectric Transfer

[0054] Spin-Coating Transfer Support Solution: A poly(methyl methacrylate) (PMMA) solution with a concentration of 3 wt% is spin-coated on the surface of the grown HfO 2 dielectric layer at a spin-coating speed of 3000 rpm for 60 s to form a uniform support layer.

[0055] Separation Process: The HfO 2 dielectric layer spin-coated with PMMA and the mica substrate are placed together in deionized water at a temperature of 25 °C. Utilizing the van der Waals force between the mica substrate and the HfO 2 dielectric layer, the HfO 2 dielectric layer and the mica substrate are gradually separated. The separation process lasts for about 30 minutes, during which the deionized water is gently stirred to ensure the separation effect.

[0056] Cleaning Step: The separated HfO 2 dielectric film is left standing in deionized water for 2 hours, and the deionized water is changed every 30 minutes for a total of 4 times to clean the surface of the HfO 2 film that comes into contact with the two-dimensional material. Figure 2 is an optical picture of the transferred dielectric at a scale of 50 um.

[0057] 3. Transfer to the Target Substrate

[0058] Using tweezers, the cleaned HfO2 The dielectric film is taken out of deionized water and transferred onto a silicon-based target substrate that has been cleaned and dried. During the transfer process, bubbles and wrinkles between the film and the target substrate are avoided as much as possible. After the transfer is completed, the sample is placed on a hot plate and baked at 150 °C for 30 minutes to completely cure the PMMA solution and enhance the adhesion between the HfO 2 dielectric film and the target substrate. Then it is soaked in acetone for 5 minutes to thoroughly clean the impurities and residual PMMA solution on the film surface.

[0059] 4. Post-treatment

[0060] The target substrate with the transferred HfO 2 dielectric film is placed in an annealing furnace and annealed under a nitrogen atmosphere. The annealing temperature is set at 300 °C and the annealing time is 60 minutes to further improve the crystallization quality and electrical properties of the HfO 2 dielectric film.

[0061] By characterizing the roughness (Ra) before and after transfer using an atomic force microscope (AFM), there is almost no obvious change. This indicates that this transfer method does not affect the surface morphology of the dielectric HfO 2 . (Refer to Figure 3 a, b)

[0062] Example 2

[0063] The following process in this example is different from Example 1:

[0064] 1. Preparation of the dielectric HfO 2 film

[0065] Substrate pretreatment: The substrate is ultrasonically cleaned in acetone, isopropyl alcohol, and deionized water in sequence, 10 minutes each time. The substrate is dried with nitrogen to avoid residual contaminants.

[0066] Plasma cleaning: The substrate is placed in the PECVD reaction chamber, and Ar or O 2 gas is introduced with a flow rate of 50 sccm. The radio frequency power supply is turned on with a power of 50 W, and plasma cleaning is carried out for 5 minutes to remove surface contaminants.

[0067] PECVD deposition process: The precursor gas TDEAH (or HfCl 4 ) is introduced with a flow rate of 10 - 20 sccm; the reaction gas O 2 with a flow rate of 20 - 50 sccm; the carrier gas Ar with a flow rate of 100 sccm. The reaction chamber pressure is set: 0.1 - 1 Torr. The radio frequency power: 100 - 300 W. The substrate temperature: 200 - 400 °C. The reaction chamber is evacuated to 10 -5Below Torr, ensure no pollution. Sequentially introduce Ar, O 2 and the precursor gas, and stabilize the gas flow rate and pressure. Turn on the radio frequency power supply to generate plasma, and start depositing HfO 2 thin film. Adjust the deposition time according to the required thin film thickness (usually 5 - 30 nm of thin film can be obtained in 10 - 40 minutes).

[0068] 2. Dielectric transfer

[0069] Spin - coat the transfer support solution: Spin - coat the PMMA solution and PPC solution with a concentration of 4 wt% on the surface of the HfO 2 dielectric layer at a spin - coating speed of 3500 rpm and a spin - coating time of 60 s.

[0070] Separation process: Place the sample in deionized water at 25 °C, and separate the HfO 2 dielectric layer from the mica substrate using van der Waals force. The separation process takes about 40 minutes, and moderate stirring of the deionized water is maintained during this period.

[0071] Cleaning step: Let the separated thin film stand in deionized water for 3 hours, and change the deionized water every 40 minutes for a total of 5 times.

[0072] 3. Transfer to the target substrate

[0073] Transfer the cleaned HfO 2 dielectric thin film to the MoS 2 target material. After transfer, bake it on a hot plate at 180 °C for 40 minutes.

[0074] 4. Post - treatment

[0075] Under a nitrogen atmosphere, anneal the target sample with the transferred HfO 2 dielectric thin film at an annealing temperature of 180 °C and an annealing time of 6 hours.

[0076] Through the Raman curve and electrical transfer curve of MoS 2 , the HfO transferred on MoS 2 has a good protective effect on the material. Depositing HfO directly again 2 will not cause doping to MoS 2 (the on - off ratio, threshold voltage and curve hysteresis size of MoS 2 hardly change), further indicating the practicability of this transfer method. (Refer to 2 a, b) Figure 4 a, b)

[0077] Example 3

[0078] In this example, the following process is different from Example 1:

[0079] 1. Preparation of Dielectric HfO 2 Thin Film

[0080] Substrate Pretreatment

[0081] Clean the substrate: Ultrasonically clean the fluorophlogopite in acetone, isopropyl alcohol, and deionized water in sequence for 10 minutes each time. Dry the substrate with nitrogen to avoid residual contaminants.

[0082] Substrate mounting: Fix the cleaned fluorophlogopite on the substrate heating stage of the PLD system to ensure a flat surface.

[0083] Pulsed Laser Deposition (PLD) process: Pump the PLD reaction chamber to a vacuum below 10 -6 Torr to ensure no contamination. Introduce oxygen (O 2 ), and control the gas pressure at 10 -4 -10 -2 Torr. Set the laser wavelength: 248 nm (KrF excimer laser) or 266 nm (Nd:YAG laser). Laser energy density: 1 - 3 J / cm 2 . Pulse frequency: 5 - 10 Hz. Laser beam focusing: Focus the laser beam onto the surface of the HfO 2 target, with a spot diameter of approximately 1 - 2 mm. Preheat the target, turn on the laser, and perform pre-sputtering on the HfO 2 target for 5 - 10 minutes to remove surface contaminants. Heat the substrate to 500 - 700 °C to improve the crystallization quality of the thin film. Start deposition: Initiate the laser pulse to bombard the HfO 2 target, generating a plasma plume. The HfO 2 particles in the plasma plume are deposited on the substrate surface to form a thin film. Adjust the deposition time according to the desired thin film thickness (usually 30 - 60 minutes can obtain a 5 - 30 nm thin film).

[0084] Annealing treatment: Anneal the deposited thin film in an oxygen atmosphere at a temperature of 300 °C for 30 - 60 minutes. Annealing can improve the crystallinity and dielectric properties of the thin film.

[0085] After annealing, slowly cool the sample to room temperature to avoid cracking of the thin film due to thermal stress.

[0086] 2. Dielectric Transfer

[0087] Spin-coat the transfer support solution: Spin-coat a PMMA solution with a concentration of 3.5 wt% on the surface of the HfO 2 dielectric layer at a spin-coating speed of 3200 rpm for 70 s.

[0088] Separation process: Place the sample in deionized water at 20 °C and separate it using van der Waals forces. The separation process takes about 35 minutes, and gently stir the deionized water.

[0089] Cleaning step: Let the separated film stand in deionized water for 2.5 hours, and change the deionized water every 35 minutes for a total of 4 times.

[0090] 3. Transfer to the target substrate

[0091] Transfer the cleaned HfO 2 dielectric film onto the silicon carbide target substrate, and bake it on a hot plate at 160 °C for 35 minutes after transfer.

[0092] 4. Post-treatment

[0093] Under a nitrogen atmosphere, anneal the target substrate with the transferred HfO 2 dielectric film, with an annealing temperature of 350 °C and an annealing time of 90 minutes.

[0094] This method is applicable to HfO grown by different growth methods 2 . By measuring the capacitance and breakdown voltage of HfO 2 before and after transfer, there is almost no change, indicating the universality of this transfer method. (Refer to Figure 5 a, b)

[0095] The above description of the embodiments is to enable those of ordinary skill in the art to understand and use the invention. It is obvious that those skilled in the art can easily make various modifications to these embodiments and apply the general principles described herein to other embodiments without creative labor. Therefore, the present invention is not limited to the above embodiments, and the improvements and modifications made by those skilled in the art without departing from the scope of the present invention should be within the protection scope of the present invention.

Claims

1. A method for lossless transfer of HfO2 dielectric film, characterized in that: The following steps are involved: S1: Deposit HfO2 dielectric layer on exfoliated mica with clean and flat surface by thermal evaporation atomic layer deposition (ALD). By adjusting the precursor flow, reaction gas pressure and reaction temperature, the transition from CVD-like growth mode to ALD growth mode is achieved to obtain a clean and flat HfO2 interface and the best film growth rate, and prepare high-quality HfO2 dielectric film. S2: Spin-coat the support solution on the surface of the HfO2 dielectric layer after growth, and separate the mica substrate and the HfO2 dielectric layer in deionized water by using the van der Waals force between the mica substrate and the HfO2 dielectric layer. The separation process ensures that the morphology of the HfO2 dielectric film does not change. S3: After the HfO2 dielectric layer is separated from the mica substrate, the HfO2 dielectric film is placed in deionized water and the deionized water is replaced several times for cleaning; S4: Transferring the cleaned HfO2 dielectric film to a target substrate.

2. The method for losslessly transferring HfO2 dielectric film according to claim 1, characterized in that: In S1, the specific process of depositing the HfO2 dielectric layer on the exfoliated mica with a clean and flat surface using thermal evaporation atomic layer deposition (ALD) includes: A precursor gas is introduced into a reaction chamber where a substrate is placed, wherein the precursor gas is tetrakis(ethylmethylamino)hafnium TEMAHf or tetrakis(diethylamino)hafnium TDEAH, so that the precursor gas is adsorbed or chemically reacted with the surface of the substrate; Flushing with inert gas to remove unreacted precursors and byproducts; The H2O gas is introduced to chemically react with the precursor adsorbed on the surface of the substrate to form a HfO2 coating; Flush again with inert gas to remove excess gas and byproducts, completing an ALD cycle; Repeat 3-10 cycles to obtain HfO2 dielectric film.

3. The method for lossless transfer of HfO2 dielectric film according to claim 2, characterized in that: In S1, the flow rate of the precursor gas is in the range of 10 sccm-20 sccm, the reaction gas pressure is in the range of 10 Pa-150 Pa, and the reaction temperature is in the range of 100° C.-280° C.

4. The method for losslessly transferring HfO2 dielectric film according to claim 2, characterized in that: In S1, the flow rate range of the H2O gas is 10sccm-20sccm, the reaction gas pressure range is 10Pa-150Pa, and the reaction temperature range is 75°C-100°C.

5. The method for lossless transfer of HfO2 dielectric film according to claim 1, characterized in that: In S2, the transfer support solution is a polymethyl methacrylate (PMMA) aqueous solution, and the concentration of the solution is in the range of 30wt%-50wt%; In S2, the separation process is carried out in deionized water at a temperature ranging from 300°C to 350°C.

6. The method for lossless transfer of HfO2 dielectric film according to claim 1, characterized in that: In S3, the HfO2 dielectric film is allowed to stand in deionized water for no less than 1 hour, and the deionized water is replaced no less than 3 times.

7. The method for lossless transfer of HfO2 dielectric film according to claim 1, characterized in that: In S4, the target substrate is any one of a silicon-based substrate, a gallium nitride substrate, and a silicon carbide substrate.

8. The method for lossless transfer of HfO2 dielectric film according to claim 1, characterized in that: After S4, the method further includes a step of annealing the HfO2 dielectric film transferred to the target substrate, wherein the annealing temperature ranges from 300° C. to 500° C. and the annealing time ranges from 120 minutes to 300 minutes.

9. The method for lossless transfer of HfO2 dielectric film according to claim 2, characterized in that: In S2, the inert gas is nitrogen or argon, and the gas flow rate during flushing is in the range of 80 sccm-100 sccm.

10. A HfO2 dielectric film obtained by the method for losslessly transferring a HfO2 dielectric film according to any one of claims 1 to 9, characterized in that: The thickness of the HfO2 dielectric film is 5nm-30nm, and the dielectric constant of the HfO2 dielectric film is 12-20.

Images