Electronic component package

Abstract

An electronic component package according to the present invention is provided with an electronic component module having: a base section including a first surface and a second surface; a first plating layer covering the first surface; a first electronic component chip disposed on the first plating layer with a first insulating layer interposed therebetween; a second plating layer covering the second surface; and a second electronic component chip provided on the second plating layer with a second insulating layer interposed therebetween. Here, the first plating layer and the second plating layer contain a first metal material, which is less susceptible to an ion migration phenomenon than Ag (silver).

Description

[0001] This application is a divisional application of a patent application with an application date of May 22, 2019 , an application number of 201910427721.3 , and an invention title of Electronic component Device package . Technical Field

[0002] The present invention relates to an electronic component package having two or more electronic component chips provided on a lead frame. Background Art

[0003] In recent years, a technique has been proposed to seek redundancy in a working system in an electronic component package such as a sensor device installed in an electronic device or the like (for example, refer to Patent Document 1).

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2017-191093 Summary of the Invention

[0007] However, for such an electronic component package, it is still necessary to further improve the working reliability.

[0008] Therefore, it is desirable to provide an electronic component package with more excellent working reliability.

[0009] An electronic component package as an embodiment of the present invention includes: a base portion including a first surface and a second surface; a first plating layer covering the first surface; a first electronic component chip disposed on the first plating layer with a first insulating layer therebetween; a second plating layer covering the second surface; and a second electronic component chip disposed on the second plating layer with a second insulating layer therebetween. The first plating layer and the second plating layer contain a first metal material that is less likely to undergo ion migration than Ag (silver). Brief Description of the Drawings

[0010] Figure 1 is a cross-sectional view showing an example of the overall structure of a sensor package according to an embodiment of the present invention.

[0011] Figure 2 is a block diagram showing Figure 1 an example of the structure of the sensor module shown in

[0012] Figure 3 is a cross-sectional view showing the overall structure of a sensor package according to a first modification of the present invention.

[0013] Figure 4 is a cross-sectional view showing the overall structure of a sensor package according to a second modification of the present invention.

[0014] Figure 5 is a sectional view showing the overall structure of the sensor package according to the third modification of the present invention.

[0015] Figure 6 is a sectional view showing the overall structure of the sensor package according to the fourth modification of the present invention.

[0016] Symbolic Explanation

[0017] 1, 1A to 1D Sensor Package

[0018] 2 Sensor Module

[0019] 3, 4 Lead

[0020] 3A, 4A Core

[0021] 3B, 4B Cladding

[0022] 5, 6 Wire

[0023] 7, 7A Molding Part

[0024] 7V Gap

[0025] 11 Base

[0026] 12 Coating

[0027] 13, 14, 19 Insulation Layer

[0028] 15, 16 ASIC

[0029] 17, 18 Sensor Element

[0030] C1, C2 Electronic Component Chip

[0031] P1, P2 Pad Detailed Description of the Embodiment

[0032] Hereinafter, embodiments for implementing the present invention will be described in detail with reference to the drawings. All the embodiments described below represent a specific example preferred for the present invention. Therefore, the numerical values, shapes, materials, constituent elements, arrangement positions of the constituent elements, connection forms, etc. shown in the following embodiments are merely examples and are not intended to limit the present invention. Therefore, constituent elements in the following embodiments that are not described in the independent claims representing the most general concept of the present invention are described as optional constituent elements. Further, each drawing is only a schematic diagram, and the illustration is not necessarily precise. In addition, in each drawing, the same reference numerals are assigned to substantially the same structures, and repeated descriptions are omitted or simplified. Further, the description will be made in the following order.

[0033] 1. One Embodiment

[0034] Give an example of a sensor package that includes a sensor module in which a pair of sensor chips are provided with an insulating layer interposed therebetween on both surfaces of a base portion covered by an integral plating layer.

[0035] 2. Variation

[0036] 2.1 Give an example of a sensor package that includes a sensor module in which a pair of sensor chips are provided with a plating layer and an insulating layer interposed therebetween on both surfaces of a base portion.

[0037] 2.2 Give an example of a sensor package that includes a sensor module in which a pair of sensor chips are provided with a common insulating layer interposed therebetween on one surface of a base portion covered by a plating layer.

[0038] 2.3 Give an example of a sensor package that includes a sensor module in which a pair of sensor chips are provided with an insulating layer interposed therebetween on both surfaces of a base portion not covered by a plating layer.

[0039] 2.4 Give an example of a sensor package that has a void provided inside a molding portion and in which a sensor or the like is disposed in the void.

[0040] 3. Other variations

[0041] <1. One embodiment>

[0042] [Structure of sensor package 1]

[0043] First, with reference to Figure 1 , the structure of a sensor package 1 according to one embodiment of the present invention will be described. Figure 1 is a cross-sectional schematic view showing an overall structural example of the sensor package 1. The sensor package 1 is, for example, a magnetic sensor for detecting a magnetic field change and is a specific example corresponding to the "electronic component package" of the present invention.

[0044] As shown in Figure 1 , the sensor package 1 includes: a sensor module 2 embedded in a molding portion 7, leads 3 and 4, and wires 5 and 6. One end of each of the leads 3 and 4 is embedded in the molding portion 7, and the other end of each is led to the outside of the molding portion 7. The molding portion 7 is made of, for example, an insulating resin. As the insulating resin, for example, a thermosetting resin obtained by dispersing a filler in a base resin can be cited, where the base resin is an epoxy resin and the filler is mainly a silica filler. In addition, the molding portion 7 is a specific example corresponding to the "protective film" of the present invention. As the constituent material of the "protective film" of the present invention, in addition to the above insulating resin, ceramics or glass can also be used.

[0045] [Structure of Sensor Module 2]

[0046] As shown in Figure 1 Figure 1, the sensor module 2 has a base portion 11, a plating layer 12, an insulating layer 13, an insulating layer 14, an electronic component chip C1, and an electronic component chip C2. Figure 2 The block diagram of Figure 1 shows an example of the structure of the sensor module 2.

[0047] (Base Portion 11)

[0048] The base portion 11 is, for example, a plate member or a foil member made of a conductive material such as copper, and includes surfaces 11A and 11B located on opposite sides.

[0049] (Plating Layer 12)

[0050] The plating layer 12 is a film made of a metal material, and integrally covers the surfaces of the base portion 11 including the surfaces 11A and 11B.

[0051] The plating layer 12 only needs to contain a metal material that is less likely to cause ion migration than Ag (silver). Specifically, it only needs to contain a metal material including at least one of Au (gold), Pd (palladium), and Ni (nickel). The plating layer 12 may have a single-layer structure made of the above metal material, or may have a multi-layer structure formed by laminating multiple layers. As the multi-layer structure, for example, a Ni / Au double-layer structure, a NiP / Au double-layer structure, or a Ni / Pd / Au three-layer structure is preferred. Furthermore, the plating layer 12 corresponds to a specific example in which the "first plating layer" and the "second plating layer" of the present invention are formed integrally.

[0052] In addition, for example, the ion migration evaluation of the plating layer 12 can be performed through an unsaturated pressurized steam test called HAST (Highly Accelerated Temperature Humidity Stress Test). The specific test conditions are specified by, for example, the standard No. 60068-2-66-60749 of the IEC (International Electrotechnical Commission). The "metal material that is less likely to cause ion migration than Ag (silver)" mentioned in the present embodiment refers to the following metal materials. Compared with Ag (silver), when using this metal material, in the temperature range of 110 ± 2 °C and the humidity range of 85 ± 5% RH, when performing HAST for 192 hours, or in the temperature range of 130 ± 2 °C and the humidity range of 85 ± 5% RH, when performing HAST for 96 hours, the time from the start of the test to the occurrence of a failure is longer or no failure occurs from the start of the test to the end of the test.

[0053] (Insulating Layer 13 and Insulating Layer 14)

[0054] The insulating layer 13 is provided on a part of the surface 11A of the base portion 11 covered by the plating layer 12. The insulating layer 14 is provided on a part of the surface 11B of the base portion 11 covered by the plating layer 12. The insulating layers 13 and 14 are, for example, both insulating adhesive films (DAF: Die Attach Film). Therefore, the insulating layers 13 and 14 bond and fix the electronic component chips C1 and the electronic component chips C2 to the base portion 11 covered by the plating layer 12, respectively. The electronic component chips C1 and the electronic component chips C2 are electrically separated from each other due to the presence of the insulating layer 13, the insulating layer 14, and the molding portion 7 for encapsulating the entire sensor module 2.

[0055] (Electronic component chips C1 and electronic component chips C2)

[0056] As Figure 1 shown, the electronic component chip C1 is provided on the plating layer 12 with the insulating layer 13 interposed therebetween. As Figure 1 and Figure 2 shown, the electronic component chip C1 includes an application specific integrated circuit (ASIC) 15, a sensor element 17, and a pad P1. Further, although not shown, the sensor element 17 is electrically connected to the ASIC 15. In addition, as Figure 1 shown, the electronic component chip C2 is provided on the plating layer 12 with the insulating layer 14 interposed therebetween. As Figure 1 and Figure 2 shown, the electronic component chip C2 includes an ASIC 16, a sensor element 18, and a pad P2. Further, although not shown, the sensor element 18 is electrically connected to the ASIC 16. The sensor element 18 and the ASIC 16 are electrically connected by, for example, a conductive wire, a conductive thin film such as a coating film, etc. These conductive wires and conductive thin films contain metals such as Au (gold), Al (aluminum), and Cu (copper), for example. Moreover, as Figure 2 shown, in the sensor package 1, a power supply Vcc1 for supplying power to the electronic component chip C1 is connected thereto, and a power supply Vcc2 for supplying power to the electronic component chip C2 is connected thereto. The power supply Vcc1 is connected to the ASIC 15 and the sensor element 17 of the electronic component chip C1, respectively. The power supply Vcc2 is connected to the ASIC 16 and the sensor element 18 of the electronic component chip C2, respectively.

[0057] The electronic component chip C1, the ASIC 15, and the sensor element 17 are specific examples corresponding to the "first electronic component chip", the "first application specific integrated circuit", and the "first sensor" of the present invention, respectively. Similarly, the electronic component chip C2, the ASIC 16, and the sensor element 18 are specific examples corresponding to the "second electronic component chip", the "second application specific integrated circuit", and the "second sensor" of the present invention, respectively.

[0058] (Sensor elements 17 and 18)

[0059] The sensor elements 17 and 18 are, for example, magnetic sensors that detect changes in an external magnetic field generated by the displacement of a magnetic body, and include, for example, Hall elements, anisotropic magneto-resistive (AMR) elements, giant magneto-resistive (GMR) elements, or tunnel magneto-resistance (TMR) elements. The sensor elements 17 and 18 respectively send the detection signals detected according to the change in the external magnetic field to the ASICs 15 and 16.

[0060] (ASICs 15 and 16)

[0061] As Figure 2 shown, the ASIC 15 has, for example, an A / D conversion unit 151, an arithmetic unit 152, and a communication unit 153. The A / D conversion unit 151 converts the detection signal from the sensor element 17 into a digital signal and outputs it to the arithmetic unit 152. The arithmetic unit 152 calculates and obtains, for example, the displacement amount of the magnetic body based on the detection signal from the sensor element 17 that has been converted into a digital signal, and outputs the calculation result to the communication unit 153. The communication unit 153 generates an output signal related to the calculation result from the arithmetic unit 152 and outputs it to the outside via the pad P1. Similarly, the ASIC 16 has, for example, an A / D conversion unit 161, an arithmetic unit 162, and a communication unit 163. The A / D conversion unit 161 converts the detection signal from the sensor element 18 into a digital signal and outputs it to the arithmetic unit 162. The arithmetic unit 162 calculates and obtains, for example, the displacement amount of the magnetic body based on the detection signal from the sensor element 18 that has been converted into a digital signal, and outputs the calculation result to the communication unit 163. The communication unit 163 generates an output signal related to the calculation result from the arithmetic unit 162 and outputs it to the outside via the pad P2.

[0062] The lead 3 is a conductive component for leading the output signal from the electronic component chip C1 to the outside, and has, for example, a core 3A made of a highly conductive material such as Cu (copper) and a cladding 3B formed so as to cover the core 3A. The cladding 3B is, for example, a plating having the same structure as the plating 12. One end of the lead 3 embedded in the molding part 7 is connected to the pad P1 through the wire 5.

[0063] The lead wire 4 is a conductive component for leading out the output signal from the electronic component chip C2 to the outside. For example, it has a core 4A made of a highly conductive material such as Cu (copper), and a cladding 4B formed so as to cover the core 4A. The cladding 4B is, for example, a plating layer having the same structure as the plating layer 12. One end of the lead wire 4 buried in the molding portion 7 is connected to the pad P2 through the wire 6.

[0064] [Effect of the sensor package 1]

[0065] In this sensor package 1, on one base portion 11, there are provided an electronic component chip C1 and an electronic component chip C2 that are electrically insulated from each other. Moreover, the electronic component chip C1 and the electronic component chip C2 are respectively powered by different power supplies Vcc1 and Vcc2. Therefore, it is possible to independently detect changes in an external magnetic field by the electronic component chip C1 and the electronic component chip C2. The change in the external magnetic field is, for example, a change that acts on the sensor package 1 generated by the displacement of a magnetic body. Therefore, redundancy of the working system can be achieved in this sensor package 1. That is, in the sensor package 1, for example, only the electronic component chip C1 can be made to operate normally, and the electronic component chip C2 can be put on standby. In the sensor package 1, in the case where it is suspected that the electronic component chip C1 has failed or the like, the standby electronic component chip C2 can be made to operate.

[0066] In the sensor package 1, the surfaces of the base portion 11, namely surfaces 11A and 11B, are covered with a plating layer 12, and the plating layer 12 contains a metal material that is less likely to exhibit ion migration phenomenon than Ag (silver). Here, if the operating voltage of the electronic component chip C1 is different from the operating voltage of the electronic component chip C2, a potential difference will occur between the potential of the ASIC 15 of the electronic component chip C1 and the potential of the ASIC 16 of the electronic component chip C2. In this case, for example, when the plating layer 12 is formed of a metal material containing Ag (silver), ion migration phenomenon may occur under certain temperature conditions and humidity conditions. That is, the Ag (silver) contained in the plating layer 12 may move through the insulating layer 13 or the insulating layer 14 to the ASIC 15 or the ASIC 16. Once such ion migration occurs, the electrical insulation of the insulating layer 13 and the insulating layer 14 will be damaged and leakage current will be generated, so the electronic component chip C1 and the electronic component chip C2 will not be able to operate normally. In contrast, in the sensor package 1 of the present embodiment, compared with the case where the plating layer 12 is formed of Ag (silver), the above-mentioned metal material constituting the plating layer 12 is less likely to penetrate into the insulating layer 13 and the insulating layer 14 and damage the insulation of the insulating layer 13 and the insulating layer 14. Therefore, even if the operating voltage of the electronic component chip C1 is different from the operating voltage of the electronic component chip C2, the electronic component chip C1 and the electronic component chip C2 will still operate normally. Therefore, the operating reliability of the sensor package 1 is more excellent.

[0067] <2. Variation example>

[0068] (2.1 First variation example)

[0069] [Structure of the sensor package 1A]

[0070] Figure 3 is a cross-sectional view showing an overall structural example of the sensor package 1A of the first variation example of the present invention. The sensor package 1 of the above-mentioned embodiment includes a plating layer 12 that integrally covers the base portion 11. In contrast, in the sensor module 2A of the sensor package 1A of the present variation example, for example, a plating layer 12A that covers the front surface of the base portion 11, namely surface 11A, and a plating layer 12B that covers the back surface of the base portion 11, namely surface 11B, are provided, and the plating layer 12A and the plating layer 12B are separated from each other. Except for this point, the sensor package 1A has substantially the same structure as the sensor package 1.

[0071] [Function and effect of the sensor package 1A]

[0072] The sensor package 1A of this modified example can also achieve the same effects as the sensor package 1 of the above-described embodiment. Moreover, in the sensor package 1A of this modified example, since the plating layers 12A and 12B are provided separately from each other, the constituent materials of the plating layer 12A and the plating layer 12B can be made different. The plating layer 12A and the plating layer 12B can also be formed by different processes.

[0073] (2.2 Second Modified Example)

[0074] [Structure of Sensor Package 1B]

[0075] Figure 4 It is a cross-sectional view showing an example of the overall structure of the sensor package 1B of the second modified example of the present invention. In the sensor package 1 of the above-described embodiment, the electronic component chip C1 is provided on one surface 11A of the base portion 11, and the electronic component chip C2 is provided on the other surface 11B of the base portion 11. In contrast, in the sensor module 2B of the sensor package 1B of this modified example, both the electronic component chip C1 and the electronic component chip C2 are provided with an insulating layer 19 interposed therebetween on the surface 11A. Except for this point, the sensor package 1B has substantially the same structure as the sensor package 1.

[0076] [Functions and Effects of Sensor Package 1B]

[0077] The sensor package 1B of this modified example can also achieve the same effects as the sensor package 1 of the above-described embodiment. In addition, according to the sensor package 1B, its thickness can be made thinner than the thickness of the sensor package 1.

[0078] (2.3 Third Modified Example)

[0079] [Structure of Sensor Package 1C]

[0080] Figure 5 It is a cross-sectional view showing an example of the overall structure of the sensor package 1C of the third modified example of the present invention. In the sensor package 1 of the above-described embodiment, the plating layer 12 is provided so as to cover the base portion 11, and the electronic component chip C1 and the electronic component chip C2 are provided on the plating layer 12. In contrast, in the sensor module 2C of the sensor package 1C of this modified example, the electronic component chip C1 is provided with an insulating layer 13 interposed therebetween on the surface 11A, and the electronic component chip C2 is provided with an insulating layer 14 interposed therebetween on the surface 11B. Except for this point, the sensor package 1C has substantially the same structure as the sensor package 1.

[0081] [Functions and Effects of Sensor Package 1C]

[0082] The sensor package 1C of this modification example can also achieve the same effects as the sensor package 1. That is, in this sensor package 1C, on a single base portion 11, there are provided an electronic component chip C1 and an electronic component chip C2 that are electrically insulated from each other. Moreover, the electronic component chip C1 and the electronic component chip C2 are respectively powered by different power supplies Vcc1 and Vcc2. Therefore, it is possible to independently detect changes in an external magnetic field by the electronic component chip C1 and the electronic component chip C2. The change in the external magnetic field is, for example, a change that acts on the sensor package 1C caused by the displacement of a magnetic body. Therefore, redundancy of the working system can be achieved in this sensor package 1C. That is, in the sensor package 1C, for example, only the electronic component chip C1 can be made to operate normally, and the electronic component chip C2 can be put on standby. In the sensor package 1C, in the case where a malfunction of the electronic component chip C1 is suspected, etc., the standby electronic component chip C2 can be made to operate.

[0083] Moreover, in the sensor package 1C of this modification example, in the case where the surfaces of the base portion 11, namely, the surfaces 11A and 11B, are not covered with a plating layer, insulating layers 13 and 14 are provided. Therefore, it is possible to avoid a short circuit between the base portion 11, the electronic component chip C1, and the electronic component chip C2 due to the ion migration phenomenon of the metal constituting the plating layer.

[0084] (2.4 Fourth Modification Example)

[0085] [Structure of Sensor Package 1D]

[0086] Figure 6 is a cross-sectional view showing an overall structural example of the sensor package 1D of the fourth modification example of the present invention. In the sensor package 1 of the above-described embodiment, the sensor module 2 etc. are tightly covered with the molding portion 7. In contrast, in the sensor package 1D of this modification example, a gap 7V is provided inside the molding portion 7A, and the sensor module 2 and the wires 5 and 6 are provided in this gap 7V. Except for this point, the sensor package 1D has substantially the same structure as the sensor package 1. Furthermore, the molding portion 7A is a specific example corresponding to the "protective film" of the present invention.

[0087] [Functions and Effects of Sensor Package 1D]

[0088] The sensor package 1D of this modification example can also achieve the same effects as the sensor package 1. Moreover, in the case of the sensor package 1D, since the sensor module 2D and the wires 5 and 6 are disposed in the void 7V inside the molding portion 7A, the sensor module 2 and the wires 5 and 6 can be separated from the molding portion 7A. Therefore, for example, when the molding portion 7A expands and contracts thermally with the change in the ambient temperature, stress can be avoided being applied to the sensor elements 17 and 18. When the sensor elements 17 and 18 are in contact with the molding portion 7A, stress may be applied to the sensor elements 17 and 18 due to the difference in the coefficient of thermal expansion, and the detection accuracy of the sensor elements 17 and 18 may decrease under a certain magnitude of stress. However, as in the case of the sensor package 1D of this modification example, by at least separating the sensor elements 17 and 18 from the molding portion 7A, stress applied to the sensor elements 17 and 18 by the molding portion 7A can be avoided.

[0089] Furthermore, in Figure 6 the shown sensor package 1D, although the sensor module 2 and the wires 5 and 6 are all housed in the void 7V, the present disclosure is not limited thereto. Specifically, at least the sensor elements 17 and 18 may be housed in the void 7V without contacting the molding portion 7A. Moreover, more preferably, the ASICs 15 and 16 are housed in the void 7V without contacting the molding portion 7A. If the molding portion 7A contacts the ASICs 15 and 16, since the coefficient of thermal expansion of the molding portion 7A is different from that of the ASICs 15 and 16, the ASICs 15 and 16 will generate strain, and stress may be indirectly applied to the sensor elements 17 and 18. However, as long as the ASICs 15 and 16 are separated from the molding portion 7A, such indirect stress applied to the sensor elements 17 and 18 can be avoided. Moreover, for the same reason, it is further preferred that, in addition to the sensor elements 17 and 18 and the ASICs 15 and 16, the wires 5 and 6 are also housed in the void 7V without contacting the molding portion 7A.

[0090] <3. Other Modification Examples>

[0091] The present invention has been described above by way of multiple embodiments and modification examples, but the present invention is not limited to these embodiments and the like, and various modifications can be made. For example, in the above embodiments and the like, a TMR element is cited as an example of the sensor element, and a sensor package for detecting a change in an external magnetic field generated by the displacement of a magnetic body is described, but the electronic component package of the present invention is not limited thereto. The electronic component package of the present invention may also be a sensing device for detecting other physical quantities, such as a current sensing device, a rotation sensing device, a relative position sensing device, a magnetic compass, or a magnetic switch. The electronic component package of the present invention may include passive components such as capacitors, inductors, or resistors in addition to electronic components such as semiconductor memories.

[0092] In addition, Figure 1 The shapes, sizes, and arrangement positions of the respective components of the sensor package shown, etc. are merely examples and are not limited thereto. Also, Figure 1 Not all of the respective components of the sensor package shown, etc. need to be provided, and other components not shown may also be provided.

[0093] In addition, in the above-described embodiments, etc., the case where two electronic component chips are provided is taken as an example, but three or more electronic component chips may also be provided.

[0094] In the electronic component package according to an embodiment of the present invention, both the first plating layer and the second plating layer contain a metal material that is less likely to cause ion migration than Ag (silver). Therefore, it is not easy for this metal material to penetrate into the first insulating layer and the second insulating layer covering the first plating layer and the second plating layer and damage the insulation of the first insulating layer and the second insulating layer.

[0095] The electronic component package according to an embodiment of the present invention has more excellent working reliability.

[0096] Furthermore, the present technology can also adopt the following structure. (1)

[0098] An electronic component package, comprising:

[0099] A base portion, including a first surface and a second surface;

[0100] A first plating layer covering the first surface;

[0101] A first electronic component chip disposed on the first plating layer with a first insulating layer interposed therebetween;

[0102] A second plating layer covering the second surface; and

[0103] A second electronic component chip disposed on the second plating layer with a second insulating layer interposed therebetween,

[0104] The first plating layer and the second plating layer contain a first metal material that is less likely to cause ion migration than silver. (2)

[0106] The electronic component package according to (1) above, wherein

[0107] The first metal material includes at least one of gold, palladium, and nickel. (3)

[0109] The electronic component package according to (1) or (2) above, wherein

[0110] The first coating layer and the second coating layer are formed integrally. (4)

[0112] An electronic component package, comprising:

[0113] A base portion, including a first surface and a second surface;

[0114] A first electronic component chip, disposed on the first surface with a first insulating layer interposed therebetween; and

[0115] A second electronic component chip, disposed on the second surface with a second insulating layer interposed therebetween. (5)

[0117] The electronic component package according to any one of (1) to (4) above, wherein

[0118] The first electronic component chip includes a first application-specific integrated circuit and a first sensor. (6)

[0120] The electronic component package according to any one of (1) to (5) above, wherein

[0121] The second electronic component chip includes a second application-specific integrated circuit and a second sensor. (7)

[0123] The electronic component package according to any one of (1) to (6) above, wherein

[0124] Both the first insulating layer and the second insulating layer are insulating adhesive films. (8)

[0126] The electronic component package according to any one of (1) to (7) above, wherein

[0127] The first surface and the second surface are on opposite sides of the base portion. (9)

[0129] The electronic component package according to any one of (1) to (8) above, wherein

[0130] It further includes:

[0131] A first lead, disposed at a position separated from the base;

[0132] A third coating layer, covering the surface of the first lead; and

[0133] A first wire, connecting the third coating layer to a first terminal of the first electronic component chip. (10)

[0135] The electronic component package described in (9) above, wherein,

[0136] It further includes:

[0137] A second lead provided at a position separated from the base portion and the first lead;

[0138] A fourth plating layer covering the surface of the second lead; and

[0139] A second wire connecting the fourth plating layer and the second terminal of the second electronic component chip. (11)

[0141] The electronic component package described in (10) above, wherein,

[0142] It further includes a protective film,

[0143] The protective film covers the first electronic component chip, the second electronic component chip, a part of the first lead, a part of the third plating layer, the first wire, a part of the second lead, a part of the fourth plating layer, and the second wire. (12)

[0145] The electronic component package described in (11) above, wherein,

[0146] The inside of the protective film has voids,

[0147] The first electronic component chip includes a first application-specific integrated circuit and a first sensor,

[0148] The second electronic component chip includes a second application-specific integrated circuit and a second sensor,

[0149] At least the first sensor and the second sensor are provided in the voids. (13)

[0151] The electronic component package according to any one of (10) to (12) above, wherein the third plating layer and the fourth plating layer contain a second metal material that is less prone to ion migration than silver.

[0152] This disclosure contains the gist disclosed in Japanese Priority Patent Application JP2018-141111 filed with the Japan Patent Office on July 27, 2018, the entire content of which is incorporated herein by reference.

[0153] Those skilled in the art will appreciate that, although various modifications, combinations, sub - combinations and alternatives may occur depending on design requirements and other factors, they are all within the scope of the appended claims or their equivalents.

Claims

1. An electronic component package, comprising: A base portion, including a first surface, a second surface, and an end surface connecting the first surface and the second surface; A first plating layer, covering the first surface and a part of the end surface; A first electronic component chip, sandwiched between a first insulating layer and disposed on the first plating layer; A second plating layer, covering the second surface and a part of the end surface and separated from the first plating layer; And A second electronic component chip, sandwiched between a second insulating layer and disposed on the second plating layer, The first plating layer and the second plating layer contain a first metal material, and the first metal material is less prone to ion migration than silver, The first electronic component chip and the second electronic component chip are electrically insulated from each other, A potential difference is generated between the potential of the first electronic component chip and the potential of the second electronic component chip, The first electronic component chip is powered by a first power supply, and the second electronic component chip is powered by a second power supply different from the first power supply.

2. An electronic component package, comprising: A base portion, which is a plate component or a foil component made of a conductive material, including a first surface and a second surface; A first plating layer, covering the first surface; A first electronic component chip, sandwiched between a first insulating layer and disposed on the first plating layer; A second plating layer, covering the second surface; And A second electronic component chip, sandwiched between a second insulating layer and disposed on the second plating layer, The first plating layer and the second plating layer are formed integrally in such a way as to integrally cover the surface of the base portion including the first surface and the second surface, The first plating layer and the second plating layer contain a first metal material, and the first metal material is less prone to ion migration than silver, The first electronic component chip and the second electronic component chip are electrically insulated from each other, A potential difference is generated between the potential of the first electronic component chip and the potential of the second electronic component chip, The first electronic component chip is powered by a first power supply, and the second electronic component chip is powered by a second power supply different from the first power supply.

3. The electronic component package according to claim 1 or 2, Wherein, The first metal material includes at least one of gold, palladium, and nickel.

4. The electronic component package according to any one of claims 1 to 3, Wherein, The first electronic component chip includes a first application-specific integrated circuit and a first sensor.

5. The electronic component package according to any one of claims 1 to 4, Wherein, The second electronic component chip includes a second application-specific integrated circuit and a second sensor.

6. The electronic component package according to any one of claims 1 to 5, Wherein, Both the first insulating layer and the second insulating layer are insulating adhesive films.

7. The electronic component package according to any one of claims 1 to 6, Wherein, The first surface and the second surface are on opposite sides of the base portion.

8. The electronic component package according to any one of claims 1 to 7, Wherein, Further comprising: The first lead, provided at a position separated from the substrate; The third plating layer, covering the surface of the first lead; and The first wire, connecting the third plating layer and the first terminal of the first electronic component chip.

9. The electronic component package according to claim 8, wherein, further comprising: The second lead, provided at a position separated from the base portion and the first lead; The fourth plating layer, covering the surface of the second lead; and The second wire, connecting the fourth plating layer and the second terminal of the second electronic component chip.

10. The electronic component package according to claim 9, wherein, further comprising a protective film, The protective film covers the first electronic component chip, the second electronic component chip, a part of the first lead, a part of the third plating layer, the first wire, a part of the second lead, a part of the fourth plating layer, and the second wire.

11. The electronic component package according to claim 10, wherein, the interior of the protective film has voids, the first electronic component chip includes a first application-specific integrated circuit and a first sensor, the second electronic component chip includes a second application-specific integrated circuit and a second sensor, at least the first sensor and the second sensor are provided in the voids.

12. The electronic component package according to any one of claims 9 to 11, wherein, the third plating layer and the fourth plating layer contain a second metal material, and the second metal material is less prone to ion migration than silver.

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