Method for manufacturing organic layer composition and method for manufacturing display device

Abstract

The present application relates to a method for manufacturing an organic layer composition and a method for manufacturing a display device. The method for manufacturing the organic layer composition includes: preparing a raw material; forming an organic layer composition by inputting the raw material into a manufacturing apparatus and stirring the raw material; and cooling the organic layer composition at a cooling rate of 0.37 DEG C / min to 0.44 DEG C / min.

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing an organic layer composition and a method for manufacturing a display device. Background Art

[0002] With the development of the information society, the demand for display devices for displaying images has been increasing. For example, display devices have been applied to various electronic devices such as smart phones, digital cameras, laptop computers, navigation devices, and smart TVs.

[0003] The display device may be a flat panel display device such as a liquid crystal display device, a field emission display device, or a light emitting display device. The light emitting display device includes an organic light emitting display device including an organic light emitting element, an inorganic light emitting display device including an inorganic light emitting element such as an inorganic semiconductor, and a super small light emitting display device including a super small light emitting element.

[0004] The organic light emitting element may include two opposing electrodes and a light emitting layer interposed therebetween. The light emitting layer receives electrons and holes from the two electrodes, and causes the electrons and holes to recombine to generate excitons, and the generated excitons change from the excited state to the ground state, thereby emitting light.

[0005] Since a light source such as a backlight unit is not required, the organic light emitting display device including an organic light emitting element can be configured to be light in weight, thin in shape, and low in power consumption. The organic light emitting display device is also attracting attention as a next-generation display device due to its high-quality characteristics such as a wide viewing angle, high brightness, high contrast, and fast response speed. Summary of the Invention

[0006] Aspects of the present disclosure provide a method for manufacturing a display device, which can improve the application defect of the organic layer by controlling the cooling rate of the organic layer of the thin film encapsulation layer.

[0007] However, the aspects of the present disclosure are not limited to those described herein. The above and other aspects of the present disclosure will become more apparent to those of ordinary skill in the art to which the present disclosure pertains by referring to the detailed description of the present disclosure given below.

[0008] According to an aspect of the present disclosure, a method for manufacturing an organic layer composition includes: preparing raw materials; forming an organic layer composition by inputting the raw materials into a manufacturing device and stirring the raw materials; and cooling the organic layer composition at a cooling rate of 0.37 °C / min to 0.44 °C / min.

[0009] In an embodiment, the raw materials include a monomer, an initiator, and a solvent, the monomer is an acrylic compound or an epoxy compound, and the initiator includes a photoinitiator or a combination of a photoinitiator and a thermal initiator.

[0010] In an embodiment, the manufacturing apparatus includes: a tank that houses raw materials; a flow path that surrounds the tank; an inlet through which a coolant is introduced into the flow path; an outlet through which the coolant is discharged from the flow path; a thermometer that is provided outside the tank and senses the temperature inside the tank; and a controller that is provided outside the tank.

[0011] In an embodiment, the controller receives the temperature from the thermometer and controls the temperature and flow rate of the coolant, and the controller is a proportional integral derivative (PDI) controller.

[0012] In an embodiment, the organic layer composition is cooled to 25 °C.

[0013] According to an aspect of the present disclosure, a method for manufacturing a display device includes: forming a light-emitting element layer including a light-emitting element on a substrate; forming a lower inorganic layer on the light-emitting element layer; forming an organic layer by applying an organic layer composition on the lower inorganic layer; and forming an upper inorganic layer on the organic layer, wherein the organic layer composition is manufactured by: preparing raw materials; forming the organic layer composition by inputting the raw materials into a manufacturing apparatus and stirring the raw materials; and cooling the organic layer composition at a cooling rate of 0.37 °C / min to 0.44 °C / min.

[0014] In an embodiment, forming the light-emitting element layer includes: forming a pixel electrode (hereinafter, also referred to as "anode electrode") on the substrate; forming a pixel defining film that covers an edge of the pixel electrode; forming a light-emitting layer on the pixel electrode and the pixel defining film; and forming a common electrode (hereinafter, also referred to as "cathode electrode") on the light-emitting layer, and forming a lower inorganic layer on the common electrode of the light-emitting element layer.

[0015] In an embodiment, the raw materials include a monomer, an initiator, and a solvent, and the monomer is an acrylic compound or an epoxy compound.

[0016] In an embodiment, the manufacturing apparatus includes: a tank that houses raw materials; a flow path that surrounds the tank; an inlet through which a coolant is introduced into the flow path; an outlet through which the coolant is discharged from the flow path; a thermometer that is provided outside the tank and senses the temperature inside the tank; and a controller that is provided outside the tank.

[0017] In an embodiment, the organic layer composition is cooled to 25 °C.

[0018] According to the method for manufacturing the organic layer composition according to the present embodiment and the method for manufacturing the display device according to the present embodiment, by cooling the organic layer composition at a cooling rate in the range of 0.37 °C / min to 0.44 °C / min, it is possible to prevent a decrease in the spreadability and poor impact resistance of the organic layer composition during inkjet printing, thereby improving the quality of the display device.

[0019] However, the effects of the embodiments are not limited to the effects described herein. By referring to the claims, the above and other effects of the embodiments will become more apparent to those of ordinary skill in the art to which the embodiments pertain. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The above and other aspects and features of the present disclosure will become more apparent by describing embodiments of the present disclosure in detail with reference to the accompanying drawings, in which:

[0021] Figure 1 is a plan view of a display device according to an embodiment;

[0022] Figure 2 is a schematic layout diagram of lines included in a display device according to an embodiment;

[0023] Figure 3 is an equivalent circuit diagram of a sub-pixel according to an embodiment;

[0024] Figure 4 is a cross-sectional view schematically illustrating a display device according to an embodiment;

[0025] Figure 5 is a cross-sectional view schematically illustrating a display device according to an embodiment;

[0026] Figure 6 is a cross-sectional view schematically illustrating a display device according to an embodiment;

[0027] Figure 7 is a flowchart schematically illustrating a method for manufacturing an organic layer composition according to an embodiment;

[0028] Figure 8 is a view schematically illustrating a device for manufacturing an organic layer composition;

[0029] Figure 9 is a graph illustrating the change in temperature of a tank of a manufacturing device over time; and

[0030] Figures 10 to 12 is a cross-sectional view schematically illustrating a method for manufacturing a display device according to an embodiment. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0031] The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the present invention are shown. However, the present invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and the scope of the present invention will be fully conveyed to those skilled in the art.

[0032] It will be understood that when a layer or substrate is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate or there can be intervening layers. Throughout the specification, like reference numerals indicate like components.

[0033] It will be understood that although the terms “first,” “second,” etc. may be used herein to describe various elements, these elements should not be limited by these terms to any particular order. These terms are only used to distinguish one element from another. For example, the first element discussed below could be termed the second element without departing from the teachings of the present invention. Similarly, the second element could also be termed the first element.

[0034] For ease of explanation, spatial relative terms such as “on” and “above” may be used herein to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatial relative terms are intended to include different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, an element described as “under” or “beneath” other elements or features will then be oriented “above” the other elements or features. Thus, the exemplary terms “under” and “beneath” can include both an orientation of above and below. The device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatial relative descriptors used herein should be interpreted accordingly.

[0035] As used herein, the terms “substantially,” “about,” and similar terms are used as approximating terms and not as terms of degree, and are intended to account for the inherent deviations in measured or calculated values recognized by one of ordinary skill in the art. As used herein, “substantially” encompasses the recited value and means within an acceptable deviation of a particular value as determined by one of ordinary skill in the art in view of the measurements discussed and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, “substantially” may mean within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the recited value.

[0036] Also, any numerical range set forth herein is intended to include all sub-ranges of the same numerical precision falling within the set forth range. For example, a range of "1.0 to 10.0" is intended to include all sub-ranges between the minimum value 1.0 and the maximum value 10.0 set forth (and including 1.0 and 10.0), i.e., all sub-ranges having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as, for example, 2.4 to 7.6. Any maximum numerical limit set forth herein is intended to include all lower numerical limits falling therein, and any minimum numerical limit set forth in this specification is intended to include all higher numerical limits falling therein. Accordingly, the applicant reserves the right to modify this specification (including the claims) to expressly set forth any sub-ranges falling within the ranges expressly set forth herein.

[0037] Each of the features of the various embodiments of the present disclosure can be partially or fully combined, and various linkages and drives are technically possible. Each embodiment can be implemented independently of each other or can be implemented in association with each other.

[0038] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0039] Figure 1 is a plan view of a display device according to an embodiment.

[0040] Reference Figure 1 , the display device 10 according to an embodiment can be applied to a smart phone, a mobile phone, a tablet personal computer (PC), a personal digital assistant (PDA), a portable multimedia player (PMP), a television, a game console, a wristwatch-type electronic device, a head-mounted display, a personal computer monitor, a laptop computer, a car navigation system, a vehicle dashboard, a digital camera, a video camera, an external billboard, an electronic sign, a medical device, an inspection device, various household appliances such as a refrigerator and a washing machine, or an Internet of Things (IoT) device. In this specification, a television (TV) will be described as an example of the display device 10, and the television can have a high resolution or an ultra-high resolution, such as high definition (HD), ultra-high definition (UHD), 4K, or 8K.

[0041] In addition, the display device 10 according to an embodiment can be variously classified according to the display method. For example, the classification of the display device 10 can include an organic light emitting display device (OLED), an inorganic light emitting display device (inorganic LED), a quantum dot light emitting display (QED), a micro LED, a nano LED, a plasma display panel (PDP), a field emission display (FED), a cathode ray tube display (CRT), a liquid crystal display (LCD), and an electrophoretic display (EPD), etc. In the following, the organic light emitting display device and the inorganic light emitting display device will be described as examples of the display device 10, and unless special distinction is required, the organic light emitting display device applied to the embodiment will be simply referred to as the display device. However, the embodiment is not limited to the organic light emitting display device or the inorganic light emitting display device, and within the scope of sharing the technical idea, other display devices listed above or known in the art can also be applied.

[0042] The display device 10 according to an embodiment may have a quadrilateral shape, for example, a rectangular shape, in a plan view. When the display device 10 is a television, the display device 10 is arranged such that its long side is positioned in the horizontal direction. However, the present disclosure is not limited thereto, and the long side of the display device 10 may be positioned in the vertical direction, and the display device 10 may be rotatably mounted such that the display device 10 can also be variably positioned in the horizontal direction or the vertical direction.

[0043] The display device 10 may include a display area DPA and a non-display area NDA. The display area DPA may be an effective area where an image is displayed. The display area DPA may have a rectangular shape in a plan view, similar to the overall shape of the display device 10, but is not limited thereto.

[0044] The display area DPA may include a plurality of pixels PX. The plurality of pixels PX may be arranged in a matrix. The shape of each pixel PX may be rectangular or square in a plan view, but is not limited thereto, and may also be a rhombus shape in which each side is inclined with respect to the direction of one side of the display device 10. The plurality of pixels PX may include various color pixels. For example, the plurality of pixels PX may include, but are not limited to, a first color pixel of red, a second color pixel of green, and a third color pixel of blue. Each color pixel may be alternately arranged in a stripe type or type.

[0045] The non-display area NDA may be provided around the display area DPA. The non-display area NDA may completely or partially surround the display area DPA. The display area DPA may have a rectangular shape, and the non-display area NDA may be provided adjacent to the four sides of the display area DPA. The non-display area NDA may constitute a border of the display device 10.

[0046] A driving circuit or driving element for driving the display area DPA may be provided in the non-display area NDA. In an embodiment, a pad portion may be provided on a substrate of the display device 10 in a first non-display area NDA1 adjacent to a first long side ( Figure 1 the lower side in) of the display device 10 and in a second non-display area NDA2 adjacent to a second long side ( Figure 1 the upper side in) of the display device 10, and an external device EXD may be mounted on a pad electrode of the pad portion. Examples of the external device EXD may include a connection film, a printed circuit board, a driving chip DIC, a connector, and a wire connection film, etc. A scan driver SDR directly formed on the substrate of the display device 10 may be provided in a third non-display area NDA3 adjacent to a first short side ( Figure 1 the left side in) of the display device 10. However, the present disclosure is not limited thereto, and the scan driver SDR may also be provided in a fourth non-display area NDA4 adjacent to a second short side ( Figure 1 the right side in) of the display device 10.

[0047] Figure 2 is a schematic layout diagram illustrating lines included in a display device according to an embodiment.

[0048] Reference Figure 1 and Figure 2 , the display device 10 may include a plurality of lines. The plurality of lines may include scan lines SCL, sense lines SSL, data lines DTL, an initialization voltage line VIL, a first voltage line VDL, and a second voltage line VSL. In addition, although not illustrated in the figure, other lines may be further provided in the display device 10.

[0049] The scan lines SCL and the sense lines SSL may extend in a first direction DR1. The scan lines SCL and the sense lines SSL may be connected to the scan driver SDR. The scan driver SDR may include a driving circuit. The scan driver SDR may be provided on one side of the display area DPA in the first direction DR1, but is not limited thereto. The scan driver SDR may be connected to a signal connection line CWL, and at least one end of the signal connection line CWL may be connected to the external device EXD by forming a pad WPD_CW in a pad area PDA of the non-display area NDA.

[0050] Meanwhile, in this specification, "connection" may mean that any component is connected to another component through physical contact with each other, or may mean that any component is connected to another component through a third component. In addition, it can be understood that any part and another part of an integrated component are connected to each other due to the integrated component. In addition, the connection between any component and another component can be interpreted as including, in addition to the connection through direct contact between the two components, the connection through a third intermediate component (for example, electrical connection).

[0051] The data line DTL and the initialization voltage line VIL may extend in a second direction DR2 intersecting the first direction DR1. The initialization voltage line VIL may further include a portion extending in the second direction DR2 and a portion branched therefrom in the first direction DR1. The first voltage line VDL and the second voltage line VSL may also include a portion extending in the second direction DR2 and a portion connected thereto and extending in the first direction DR1. The first voltage line VDL and the second voltage line VSL may have a grid structure, but are not limited thereto. Although not illustrated in the figure, each of the pixels PX of the display device 10 may be connected to one or more data lines DTL, initialization voltage lines VIL, first voltage lines VDL, and second voltage lines VSL.

[0052] The data line DTL, the initialization voltage line VIL, the first voltage line VDL, and the second voltage line VSL may be electrically connected to at least one line pad WPD. Each line pad WPD may be provided in the pad area PDA. In an embodiment, the line pad (hereinafter referred to as "data pad") WPD_DT of the data line DTL may be provided in the pad area PDA on one side of the display area DPA in the second direction DR2, and the line pad (hereinafter referred to as "initialization voltage pad") WPD_Vint of the initialization voltage line VIL, the line pad (hereinafter referred to as "first power supply pad") WPD_VDD of the first voltage line VDL, and the line pad (hereinafter referred to as "second power supply pad") WPD_VSS of the second voltage line VSL may be provided in the pad area PDA located on the other side of the display area DPA in the second direction DR2 (that is, the side of the display area DPA opposite to the second direction DR2). In another embodiment, the data pad WPD_DT, the initialization voltage pad WPD_Vint, the first power supply pad WPD_VDD, and the second power supply pad WPD_VSS may all be provided in the same area, for example, in the non-display area NDA located on the upper side of the display area DPA. The external device EXD may be mounted on the line pad WPD. The external device EXD may be mounted on the line pad WPD by an anisotropic conductive film or ultrasonic bonding, etc.

[0053] Each pixel PX or n (n is an integer from 1 to 3) sub-pixels SPX of the display device 10 (see Figure 3 ) includes a pixel driving circuit. The lines described above can apply driving signals to each pixel driving circuit while passing through each pixel PX or bypassing each pixel PX. The pixel driving circuit may include transistors and capacitors. The number of transistors and capacitors in each pixel driving circuit can be variously changed. According to an embodiment, each sub-pixel SPX of the display device 10 may have a 3T1C structure in which the pixel driving circuit includes three transistors and one capacitor. Hereinafter, the 3T1C structure will be used as an example to describe the pixel driving circuit, but the present disclosure is not limited thereto, and various other modified pixel PX structures, such as 2T1C structures, 7T1C structures, and 6T1C structures, may also be applied.

[0054] Figure 3 is an equivalent circuit diagram of a sub-pixel according to an embodiment.

[0055] Reference Figure 3 , in addition to the light-emitting element ED, each sub-pixel SPX of the display device 10 according to an embodiment (see Figure 1 ) further includes three transistors DTR, STR1, and STR2 and one storage capacitor CST.

[0056] The light-emitting element ED emits light according to the current supplied through the driving transistor DTR. The light-emitting element ED may be implemented as an inorganic light-emitting diode, an organic light-emitting diode, a micro light-emitting diode, or a nano light-emitting diode, etc.

[0057] The first electrode (i.e., the anode electrode) of the light-emitting element ED may be connected to the source electrode of the driving transistor DTR, and the second electrode (i.e., the cathode electrode) of the light-emitting element ED may be connected to the second power supply line ELVSL to which a low potential voltage (second power supply voltage) lower than the high potential voltage (first power supply voltage) of the first power supply line ELVDL is applied.

[0058] The driving transistor DTR adjusts the current flowing from the first power supply line ELVDL to which the first power supply voltage is applied to the light-emitting element ED according to the voltage difference between the gate electrode and the source electrode. The gate electrode of the driving transistor DTR may be connected to the first electrode of the first transistor STR1, the source electrode of the driving transistor DTR may be connected to the first electrode of the light-emitting element ED, and the drain electrode of the driving transistor DTR may be connected to the first power supply line ELVDL to which the first power supply voltage is applied.

[0059] The first transistor STR1 is turned on by a scan signal of the scan line SCL and connects the data line DTL to the gate electrode of the driving transistor DTR. The gate electrode of the first transistor STR1 may be connected to the scan line SCL, the first electrode of the first transistor STR1 may be connected to the gate electrode of the driving transistor DTR, and the second electrode of the first transistor STR1 may be connected to the data line DTL.

[0060] The second transistor STR2 is turned on by a sense signal of the sense line SSL and connects the initialization voltage line VIL to the source electrode of the driving transistor DTR. The gate electrode of the second transistor STR2 may be connected to the sense line SSL, the first electrode of the second transistor STR2 may be connected to the initialization voltage line VIL, and the second electrode of the second transistor STR2 may be connected to the source electrode of the driving transistor DTR.

[0061] In an embodiment, the first electrode of each of the first transistor STR1 and the second transistor STR2 may be a source electrode, and the second electrode of each of the first transistor STR1 and the second transistor STR2 may be a drain electrode, but the present disclosure is not limited thereto.

[0062] A capacitor CST is formed between the gate electrode and the source electrode of the driving transistor DTR. The storage capacitor CST stores the differential voltage between the gate voltage and the source voltage of the driving transistor DTR.

[0063] The driving transistor DTR and the first transistor STR1 and the second transistor STR2 may be formed as thin film transistors. In addition, Figure 3 it is mainly described that the driving transistor DTR and the first transistor STR1 and the second transistor STR2 are N-type metal oxide semiconductor field effect transistors (MOSFETs), but the present disclosure is not limited thereto. That is, the driving transistor DTR and the first transistor STR1 and the second transistor STR2 may be P-type MOSFETs, or some of them may be N-type MOSFETs, and some of them may be P-type MOSFETs.

[0064] Figure 4 is a cross-sectional view schematically illustrating a display device according to an embodiment. Figure 5 is a cross-sectional view schematically illustrating a display device according to an embodiment.

[0065] Reference Figure 4 and Figure 5 According to embodiments, the display device 10 (see Figure 1) may include a substrate SUB, a light-emitting element layer EML, a thin-film encapsulation layer TFEL, a filling layer FIL, a wavelength conversion layer WCL, a color filter layer CFL, a counter substrate TSUB, a first coupling member SEL1, and a second coupling member SEL2.

[0066] The substrate SUB may be an insulating substrate. The substrate SUB may include a transparent material. For example, the substrate SUB may include a transparent insulating material such as glass or quartz. The substrate SUB may be a rigid substrate. In addition, the substrate SUB is not limited thereto and may also include a plastic such as polyimide and may also have a flexible property capable of being bent, folded, or curled.

[0067] The light-emitting element layer EML may be disposed on the substrate SUB. The light-emitting element layer EML may include a plurality of switching elements and light-emitting elements ED (see Figure 3 ) provided in each sub-pixel SPX (see Figure 3 ). The plurality of switching elements may drive the light-emitting elements ED (see Figure 3 ) to emit light from the light-emitting elements ED (see Figure 3 ).

[0068] The thin-film encapsulation layer TFEL may be disposed on the light-emitting element layer EML. The thin-film encapsulation layer TFEL may include an organic layer disposed between a plurality of inorganic layers to protect the light-emitting element layer EML from external moisture and oxygen.

[0069] A counter substrate TSUB opposite to the substrate SUB may be provided. The counter substrate TSUB may encapsulate the light-emitting element layer EML together with the substrate SUB. The counter substrate TSUB may include a transparent material. For example, the counter substrate TSUB may include a transparent insulating material such as glass or quartz.

[0070] The color filter layer CFL may be disposed on one surface of the counter substrate TSUB. The color filter layer CFL may filter light incident from the outside to reduce reflection of external light and improve color characteristics of the light emitted through the wavelength conversion layer WCL.

[0071] The wavelength conversion layer WCL may be disposed on one surface of the color filter layer CFL. The wavelength conversion layer WCL may convert the wavelength of the light emitted from the light-emitting element layer EML to emit red, green, and blue light.

[0072] The filling layer FIL may be disposed between the substrate SUB and the counter substrate TSUB. The filling layer FIL may be filled between the substrate SUB and the counter substrate TSUB to protect the display area of the display device 10 (see Figure 1 ).

[0073] The substrate SUB and the opposing substrate TSUB may be coupled to each other through a first coupling member SEL1. The first coupling member SEL1 may seal the light-emitting element layer EML by coupling the substrate SUB and the opposing substrate TSUB to each other. The first coupling member SEL1 may be disposed in a non-display area NDA (see Figure 1 ) to surround the display area DPA (see Figure 1 ) of the display device 10 (see Figure 1 ).

[0074] A second coupling member SEL2 may be disposed on the side surfaces of the substrate SUB and the opposing substrate TSUB. The second coupling member SEL2 may seal the side surfaces of the display device 10 and prevent moisture from penetrating.

[0075] Hereinafter, the configuration of the display device according to the embodiment will be described in detail with reference to other drawings.

[0076] Figure 6 is a cross-sectional view schematically illustrating a display device according to an embodiment. Figure 5 illustrates a part of the display device.

[0077] Referring to Figure 6 and Figure 5 , the light-emitting element layer EML may be disposed on the substrate SUB. The light-emitting element layer EML may include a buffer layer 120, a lower metal layer BML, a first insulating layer 130, a semiconductor layer ACT, a gate electrode GE, a gate insulating layer 140, a second insulating layer 150, a source electrode SE, a drain electrode DE, a third insulating layer 155, a fourth insulating layer 160, a light-emitting element ED, and a pixel defining film 170.

[0078] The buffer layer 120 may be disposed on the substrate SUB. The buffer layer 120 may be used to block foreign substances or moisture from penetrating through the substrate SUB into the elements disposed on the buffer layer 120.

[0079] The buffer layer 120 may include an inorganic material such as SiO 2 , SiN x or SiON, and may be formed as a single layer or multiple layers, but is not limited thereto.

[0080] The lower metal layer BML may be disposed on the buffer layer 120. The lower metal layer BML may block external light or light emitted from the light-emitting element ED to be described later from being introduced into the semiconductor layer ACT. Accordingly, the leakage current caused by light in the thin film transistor to be described later may be reduced or prevented.

[0081] The lower metal layer BML can be formed of a material that blocks light and has electrical conductivity. In some embodiments, the lower metal layer BML can include a single material among metals such as silver (Ag), nickel (Ni), gold (Au), platinum (Pt), aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), and neodymium (Nd), or an alloy thereof. In some embodiments, the lower metal layer BML can have a single-layer or multi-layer structure. For example, when the lower metal layer BML has a multi-layer structure, the lower metal layer BML can be a stacked structure of titanium (Ti) / copper (Cu) / indium tin oxide (ITO) or titanium (Ti) / copper (Cu) / aluminum oxide (Al 2 O 3 ), but is not limited thereto.

[0082] In some embodiments, the lower metal layer BML can be provided in multiple numbers to correspond to each semiconductor layer ACT and can overlap with the semiconductor layer ACT. In some embodiments, the width of the lower metal layer BML can be wider than the width of the semiconductor layer ACT.

[0083] In some embodiments, the lower metal layer BML can also be a data line, a power supply line, or a part of a wiring that electrically connects thin film transistors (not illustrated) and the thin film transistors ( Figure 6 GE, ACT, DE, and SE in) illustrated in the drawings to each other. In some embodiments, the lower metal layer BML can be made of a material having a lower resistance than the resistance of the source electrode SE and the drain electrode DE.

[0084] The first insulating layer 130 can be disposed on the lower metal layer BML. The first insulating layer 130 can be used to electrically insulate the lower metal layer BML and the semiconductor layer ACT from each other. The first insulating layer 130 can cover the lower metal layer BML.

[0085] The first insulating layer 130 can include inorganic materials such as SiO 2 , SiN x , SiON, Al 2 O 3 , TiO 2 , Ta 2 O, HfO 2 , or ZrO 2 , but is not limited thereto.

[0086] The semiconductor layer ACT can be disposed on the first insulating layer 130. The semiconductor layer ACT can be disposed to correspond to the first light-emitting region ELA1, the second light-emitting region ELA2, and the third light-emitting region ELA3 in the display area DPA, respectively. In addition, the semiconductor layer ACT can be disposed to overlap with the lower metal layer BML, thereby suppressing the generation of photocurrent in the semiconductor layer ACT.

[0087] The semiconductor layer ACT may include an oxide semiconductor. In some embodiments, the semiconductor layer ACT may be formed of a ZnO-based material such as Zn oxide, In-Zn oxide, and Ga-In-Zn oxide, and may be an IGZO (In-Ga-Zn-O) semiconductor containing metals such as indium (In) and gallium (Ga) in ZnO, but is not limited thereto. For example, the semiconductor layer ACT may include amorphous silicon or polycrystalline silicon.

[0088] The gate electrode GE may be disposed on the semiconductor layer ACT. The gate electrode GE may be disposed to overlap the semiconductor layer ACT in the display area DPA. In some embodiments, the width of the gate electrode GE may be narrower than the width of the semiconductor layer ACT, but is not limited thereto.

[0089] Considering the adhesion to adjacent layers, the surface flatness of the stacked layers, and processability, etc., the gate electrode GE may include one or more of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu), and may be formed of a single layer or multiple layers, but is not limited thereto.

[0090] The gate insulating layer 140 may be disposed between the semiconductor layer ACT and the gate electrode GE. The gate insulating layer 140 may be used to insulate the semiconductor layer ACT and the gate electrode GE from each other. In some embodiments, the gate insulating layer 140 is not formed of a single layer on the surface of the substrate SUB on one side in the third direction DR3, but has a partially patterned shape, and the width of the gate insulating layer 140 may be narrower than the width of the semiconductor layer ACT and may be greater than the width of the gate electrode GE, but is not limited thereto.

[0091] The gate insulating layer 140 may include an inorganic material. For example, the gate insulating layer 140 may include the inorganic materials exemplified in the description of the first insulating layer 130.

[0092] The second insulating layer 150 may be disposed on the gate insulating layer 140 and cover the semiconductor layer ACT and the gate electrode GE. In some embodiments, the second insulating layer 150 may be used as a planarization film to provide a flat surface.

[0093] The second insulating layer 150 may include an organic material. In some embodiments, the second insulating layer 150 may include at least one of photo acrylate (PAC), polystyrene, polymethyl methacrylate (PMMA), polyacrylonitrile (PAN), polyamide, polyimide, polyarylether, heterocyclic polymer, parylene, fluoropolymer, epoxy resin, benzocyclobutene series resin, silicone series resin, and silane resin, but is not limited thereto.

[0094] In some embodiments, the second insulating layer 150 may include an inorganic material. For example, the second insulating layer 150 may include the inorganic materials illustrated in the description of the first insulating layer 130.

[0095] The source electrode SE and the drain electrode DE may be spaced apart from each other and disposed on the second insulating layer 150. The source electrode SE and the drain electrode DE may each be connected to the semiconductor layer ACT through a contact hole penetrating the second insulating layer 150. The source electrode SE may not only penetrate the second insulating layer 150, but also penetrate the first insulating layer 130, and be connected to the lower metal layer BML. When the lower metal layer BML is part of a line for transmitting a signal or voltage, the source electrode SE may be connected to and electrically coupled to the lower metal layer BML to receive the voltage etc. provided to the line. Alternatively, when the lower metal layer BML is a floating pattern rather than a separate line, the voltage etc. provided to the source electrode SE may be transmitted to the lower metal layer BML.

[0096] The source electrode SE and the drain electrode DE may include aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed of multiple layers or a single layer. In some embodiments, the source electrode SE and the drain electrode DE may have a multi-layer structure of Ti / Al / Ti, but is not limited thereto.

[0097] The semiconductor layer ACT, the gate electrode GE, the source electrode SE, and the drain electrode DE described above may form a thin film transistor as a switching element. In some embodiments, the thin film transistors may be respectively positioned in the first light emitting region ELA1, the second light emitting region ELA2, and the third light emitting region ELA3. In some embodiments, a part of the thin film transistor may also be positioned in the non-light emitting region NELA.

[0098] The third insulating layer 155 may be disposed on the second insulating layer 150 to cover the thin film transistor. In some embodiments, the third insulating layer 155 may be a passivation layer.

[0099] In some embodiments, the third insulating layer 155 may include an inorganic material. For example, the third insulating layer 155 may include the inorganic materials illustrated in the description of the first insulating layer 130.

[0100] The fourth insulating layer 160 may be disposed on the third insulating layer 155 to cover the third insulating layer 155. In some embodiments, the fourth insulating layer 160 may be a planarized film.

[0101] The fourth insulating layer 160 may be formed of an organic material. In some embodiments, the fourth insulating layer 160 may include an acrylic resin, an epoxy resin, an imide resin, an ester resin, etc., or may include a photosensitive organic material, but is not limited thereto.

[0102] The anode electrode ANO may be positioned on the fourth insulating layer 160 in the display area DPA (see Figure 1 ).

[0103] The anode electrode ANO may be present in each of the first light-emitting area ELA1, the second light-emitting area ELA2, and the third light-emitting area ELA3, and at least some of them may further extend to the non-light-emitting area NELA. The anode electrode ANO may be connected to the drain electrode DE of the thin-film transistor.

[0104] In some embodiments, the anode electrode ANO may be a reflective electrode. In this case, the anode electrode ANO may be a metal layer including metals such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, and Cr. In another embodiment, the anode electrode ANO may further include a metal oxide layer stacked on the metal layer. In an embodiment, the anode electrode ANO may have a multilayer structure, for example, a two-layer structure such as ITO / Ag, Ag / ITO, ITO / Mg, and ITO / MgF 2 or a three-layer structure such as ITO / Ag / ITO.

[0105] The pixel defining film 170 may be disposed on the anode electrode ANO. The pixel defining film 170 may define the first light-emitting area ELA1, the second light-emitting area ELA2, and the third light-emitting area ELA3 as openings exposing the anode electrode ANO, respectively.

[0106] The pixel defining film 170 may overlap with the light-blocking area BA of the color filter layer CFL, which will be described later, in the third direction DR3. In addition, the pixel defining film 170 may also overlap with the bank BK, which will be described later, in the third direction DR3.

[0107] The pixel defining film 170 may include an organic insulating material such as a polyacrylate resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, a polyphenylene ether resin, a polyphenylene sulfide resin, or benzocyclobutene (BCB), but is not limited thereto.

[0108] The light-emitting layer OL may be disposed on the anode electrode ANO. In some embodiments, the light-emitting layer OL may have the shape of a continuous film formed over a plurality of light-emitting regions ELA1, ELA2, and ELA3 and a non-light-emitting region NELA. In some embodiments, the light-emitting layer OL may be located only within the display area DPA (see Figure 1 ), but is not limited thereto. For example, a portion of the light-emitting layer OL may be further located in the non-display area NDA (see Figure 1 ).

[0109] In some embodiments, the light-emitting layer OL may include an organic layer containing an organic material. The organic layer may include an organic light-emitting layer, and in some cases may further include a hole injection layer / hole transport layer and / or an electron injection layer / electron transport layer as auxiliary layers to assist in emitting light.

[0110] In some embodiments, when the display device 10 is a micro-LED display device or a nano-LED display device, the light-emitting layer OL may further include an inorganic material such as an inorganic semiconductor.

[0111] The cathode electrode CE may be disposed on the light-emitting layer OL. In some embodiments, the cathode electrode CE may be disposed on the light-emitting layer OL and have the shape of a continuous film formed over a plurality of light-emitting regions ELA1, ELA2, and ELA3 and a non-light-emitting region NELA. In other words, the cathode electrode CE may completely cover the light-emitting layer OL.

[0112] The cathode electrode CE may have semi-transparency or transparency. When the cathode electrode CE has a thickness of several tens to several hundreds of angstroms, the cathode electrode CE may have semi-transparency. In some embodiments, when the cathode electrode CE has semi-transparency, the cathode electrode CE may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, or a compound or mixture thereof (e.g., a mixture of Ag and Mg), or include a multi-layered structural material such as LiF / Ca or LiF / Al. Meanwhile, the cathode electrode CE may include a transparent conductive oxide and may have transparency. In some embodiments, when the cathode electrode CE has transparency, the cathode electrode CE may include tungsten oxide (W x O y ), titanium oxide (TiO 2 ), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), or magnesium oxide (MgO), etc.

[0113] The anode electrode ANO, the light-emitting layer OL, and the cathode electrode CE can form a light-emitting element ED. For example, the anode electrode ANO, the light-emitting layer OL, and the cathode electrode CE in the first light-emitting region ELA1 can form a first light-emitting element, the anode electrode ANO, the light-emitting layer OL, and the cathode electrode CE in the second light-emitting region ELA2 can form a second light-emitting element, and the anode electrode ANO, the light-emitting layer OL, and the cathode electrode CE in the third light-emitting region ELA3 can form a third light-emitting element. The first light-emitting element, the second light-emitting element, and the third light-emitting element can each emit light. The emitted light from each light-emitting element ED can have a peak wavelength of at least 440 nm and not exceeding 480 nm. In an embodiment, the light emitted by the first, second, and third light-emitting elements can be blue light.

[0114] Meanwhile, a thin-film encapsulation layer TFEL can be disposed on the light-emitting element layer EML. The thin-film encapsulation layer TFEL can be disposed on the cathode electrode CE. The thin-film encapsulation layer TFEL can be used to protect the components located below the thin-film encapsulation layer TFEL from foreign substances or moisture. The thin-film encapsulation layer TFEL can be commonly disposed in the first light-emitting region ELA1, the second light-emitting region ELA2, the third light-emitting region ELA3, and the non-light-emitting region NELA.

[0115] The thin-film encapsulation layer TFEL can include a lower inorganic layer TFE1, an organic layer TFE2, and an upper inorganic layer TFE3 sequentially stacked on the cathode electrode CE.

[0116] The lower inorganic layer TFE1 can completely cover the cathode electrode CE in the display area DPA to cover the first light-emitting element, the second light-emitting element, and the third light-emitting element. The organic layer TFE2 can be disposed on the lower inorganic layer TFE1 and cover the first light-emitting element, the second light-emitting element, and the third light-emitting element. The upper inorganic layer TFE3 can be disposed on the organic layer TFE2 and completely cover the organic layer TFE2.

[0117] In some embodiments, each of the lower inorganic layer TFE1 and the upper inorganic layer TFE3 can be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiON), or lithium fluoride, etc., but not limited thereto.

[0118] In some embodiments, the organic layer TFE2 can be made of an acrylic resin (e.g., a methacrylic resin), polyisoprene, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, or a perylene resin, etc., but not limited thereto.

[0119] Figure 6Depicts a counter substrate TSUB, which can be disposed on a substrate SUB on which a light-emitting element layer EML and a thin-film encapsulation layer TFEL are provided. A color filter layer CFL and a wavelength conversion layer WCL provided on one surface of the color filter layer CFL can be disposed on one surface of the counter substrate TSUB. In addition, the display device 10 can include a low refractive index layer LR and a first capping layer CPL1 provided between the color filter layer CFL and the wavelength conversion layer WCL, and can include a spacer layer SPC provided on one surface of the wavelength conversion layer WCL.

[0120] The color filter layer CFL can be disposed on the other side of the counter substrate TSUB in the third direction DR3 (i.e., the side of the counter substrate TSUB opposite to the third direction DR3), that is, disposed between the counter substrate TSUB and the substrate SUB. The color filter layer CFL can include a filter pattern region and a light-blocking pattern portion BM. The light-blocking pattern portion BM can surround the filter pattern region. The filter pattern region of the color filter layer CFL can define a light-transmitting region, and the light-blocking pattern portion BM can define a light-blocking region BA.

[0121] As Figure 6 illustrated, the color filter layer CFL can include a first color filter 321, a second color filter 322, and a third color filter 323. The first color filter 321 can absorb substantially all of the second light and the third light, but not the first light. The second color filter 322 can absorb substantially all of the first light and the third light, but not the second light. And the third color filter 323 can absorb substantially all of the first light and the second light, but not the third light. In other words, the first color filter 321 can transmit the first light, the second color filter 322 can transmit the second light, and the third color filter 323 can transmit the third light.

[0122] In some embodiments, the first color filter 321 can be a blue color filter and can include a blue colorant. In this specification, the colorant can be a dye, a pigment, or a combination thereof. The first color filter 321 can include a base resin, and the blue colorant can be dispersed in the base resin. In some embodiments, the second color filter 322 can be a green color filter and can include a green colorant. The second color filter 322 can include a base resin, and the green colorant can be dispersed in the base resin. In some embodiments, the third color filter 323 can be a red color filter and can include a red colorant. The third color filter 323 can include a base resin, and the red colorant can be dispersed in the base resin.

[0123] The first color filter 321 may include a first filter pattern region 321a and a first light-blocking pattern region 321b surrounding the first filter pattern region 321a. The second color filter 322 may include a second filter pattern region 322a and a second light-blocking pattern region 322b surrounding the second filter pattern region 322a. And the third color filter 323 may include a third filter pattern region 323a and a third light-blocking pattern region 323b surrounding the third filter pattern region 323a.

[0124] Specifically, the first filter pattern region 321a of the first color filter 321 may be in the first light-transmissive region TA1, and the first light-blocking pattern region 321b of the first color filter 321 may surround the first filter pattern region 321a in the first light-transmissive region TA1 without extending into the second light-transmissive region TA2 and the third light-transmissive region TA3. The first light-blocking pattern region 321b may overlap with the light-blocking region BA. The second filter pattern region 322a of the second color filter 322 may be in the second light-transmissive region TA2, and the second light-blocking pattern region 322b of the second color filter 322 may surround the second filter pattern region 322a in the second light-transmissive region TA2 without extending into the first light-transmissive region TA1 and the third light-transmissive region TA3. The second light-blocking pattern region 322b may overlap with the light-blocking region BA. The third filter pattern region 323a of the third color filter 323 may overlap with the third light-transmissive region TA3, and the third light-blocking pattern region 323b of the third color filter 323 may surround the third filter pattern region 323a in the third light-transmissive region TA3 without extending into the first light-transmissive region TA1 and the second light-transmissive region TA2. The third light-blocking pattern region 323b may overlap with the light-blocking region BA. In other words, the filter pattern regions of the color filter layer CFL may include the first filter pattern region 321a of the first color filter 321, the second filter pattern region 322a of the second color filter 322, and the third filter pattern region 323a of the third color filter 323, and the light-blocking pattern portion BM may have a structure in which the first light-blocking pattern region 321b of the first color filter 321, the second light-blocking pattern region 322b of the second color filter 322, and the third light-blocking pattern region 323b of the third color filter 323 are stacked.

[0125] The first filter pattern region 321a of the first color filter 321 may serve as a blocking filter for blocking red light and green light. Specifically, the first filter pattern region 321a may selectively transmit the first light (e.g., blue light) and may block or absorb the second light (e.g., green light) and the third light (e.g., red light).

[0126] The second filtering pattern region 322a of the second color filter 322 can be used as a blocking filter for blocking blue light and red light. Specifically, the second filtering pattern region 322a can selectively transmit the second light (e.g., green light), and can block or absorb the first light (e.g., blue light) and the third light (e.g., red light).

[0127] The third filtering pattern region 323a of the third color filter 323 can be used as a blocking filter for blocking blue light and green light. Specifically, the third filtering pattern region 323a can selectively transmit the third light (e.g., red light), and can block or absorb the first light (e.g., blue light) and the second light (e.g., green light).

[0128] In some embodiments, the light blocking pattern portion BM may have a structure in which a first light blocking pattern region 321b, a third light blocking pattern region 323b, and a second light blocking pattern region 322b are sequentially stacked in the third direction DR3; however, the present disclosure is not limited thereto. For example, the light blocking pattern portion BM may not be made of the color filters 321, 322, and 323 described above, but may be formed of a separate organic light blocking material through a coating and exposure process of the organic light blocking material. Based on this understanding, hereinafter, for the sake of convenience of explanation, it will be assumed that the light blocking pattern portion BM has a structure in which the first light blocking pattern region 321b, the third light blocking pattern region 323b, and the second light blocking pattern region 322b are sequentially stacked. The light blocking pattern portion BM can absorb all of the first light, the second light, and the third light through the configuration described above.

[0129] The low refractive index layer LR may be provided on one surface of the color filter layer CFL, for example, may be provided on the other side of the color filter layer CFL in the third direction DR3 (i.e., the side of the color filter layer CFL opposite to the third direction DR3). Since the low refractive index layer LR has a refractive index lower than those of the first light transmissive member TPL, the second light transmissive member WCL1, and the third light transmissive member WCL2 to be described later, the low refractive index layer LR can be used to recover light by inducing total reflection of the light traveling from the first light transmissive member TPL, the second light transmissive member WCL1, and the third light transmissive member WCL2 to the low refractive index layer LR.

[0130] The low refractive index layer LR may include an organic material. In some embodiments, the refractive index of the low refractive index layer LR may be 1.3 or less. When the refractive index of the low refractive index layer LR is 1.3 or less, due to the difference in refractive index between the low refractive index layer LR and the first light transmissive member TPL, the second light transmissive member WCL1, and the third light transmissive member WCL2, total reflection of light can occur sufficiently.

[0131] In addition, the low refractive index layer LR can be used to compensate for and flatten the steps caused by the light-blocking pattern regions 321b, 322b, and 323b of the color filter layer CFL. Accordingly, the first capping layer CPL1 disposed on the low refractive index layer LR can be flat.

[0132] The first capping layer CPL1 can be disposed on one surface of the low refractive index layer LR and cover the low refractive index layer LR. The first capping layer CPL1 can prevent impurities such as moisture or air from penetrating from the outside into the low refractive index layer LR or the color filter layer CFL and damaging or contaminating the low refractive index layer LR, the light-blocking pattern portion BM, and the filter pattern region of the color filter layer CFL.

[0133] The first capping layer CPL1 can include an inorganic material. In some embodiments, the first capping layer CPL1 can include an inorganic material such as SiO 2 , SiN x or SiON, and can be formed of a single layer or multiple layers, but is not limited thereto.

[0134] The wavelength conversion layer WCL can be disposed on one surface of the first capping layer CPL1. The wavelength conversion layer WCL can include a bank BK, a first light-transmitting member TPL, a second light-transmitting member WCL1, a third light-transmitting member WCL2, and a second capping layer CPL2.

[0135] Reference Figure 6 , the bank BK can be disposed on the other side of the first capping layer CPL1 in the third direction DR3 (i.e., the side of the first capping layer CPL1 opposite to the third direction DR3), and be spaced apart from each other in the second direction DR2 to form a space for accommodating the light-transmitting member. That is, the bank BK can be used to partition the space in which the light-transmitting member is disposed. The bank BK can be in direct contact with the other side of the first capping layer CPL1 in the third direction DR3 (i.e., the side of the first capping layer CPL1 opposite to the third direction DR3). In a plan view, the bank BK can surround the light-transmitting member. The bank BK can be disposed in the non-light-emitting region NELA and the light-blocking region BA. The bank BK can not be disposed in the light-emitting regions ELA1, ELA2, and ELA3 and the light-transmitting regions TA1, TA2, and TA3.

[0136] In some embodiments, the bank BK can include a photocurable organic material or a photocurable organic material containing a light-blocking material, but is not limited thereto.

[0137] The first light-transmitting member TPL may be in the first light-transmitting region TA1, the second light-transmitting member WCL1 may be in the second light-transmitting region TA2, and the third light-transmitting member WCL2 may be in the third light-transmitting region TA3. At the same time, the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2 may be referred to as a wavelength conversion layer or a wavelength conversion material layer.

[0138] The first light-transmitting member TPL may be disposed in a space separated by the dam BK in the first light-emitting region ELA1 and the first light-transmitting region TA1. The first light-transmitting member TPL may be in direct contact with the first capping layer CPL1 and the dam BK.

[0139] The first light-transmitting member TPL may be a light-transmitting pattern that transmits incident light. The first light-transmitting member TPL may directly transmit the light of the first color emitted from the light-emitting element layer EML. Specifically, as described above, the emitted light provided from the first light-emitting element is blue light, and may be transmitted through the first light-transmitting member TPL and the first filter pattern region 321a of the first color filter 321 and emitted to the outside of the display device 10. In other words, the first emitted light L1 transmitted through the first light-transmitting region TA1 from the first light-emitting region ELA1 and emitted to the outside may be blue light.

[0140] The first light-transmitting member TPL may include a base resin 330 and a light-scattering body 331.

[0141] The base resin 330 may be made of an organic material having a high light transmittance. In some embodiments, the base resin 330 may include an organic material such as an epoxy resin, an acrylic resin, a cardo resin, or an imide resin, but is not limited thereto.

[0142] The light-scattering body 331 may have a refractive index different from that of the base resin 330 and form an optical interface with the base resin 330. The light-scattering body 331 may be light-scattering particles. The light-scattering body 331 may scatter light in a random direction independent of the incident direction of the incident light, and substantially does not convert the wavelength of the light transmitted through the first light-transmitting region TA1.

[0143] The light-scattering body 331 may include metal oxide particles or organic particles as materials that scatter at least a part of the transmitted light. In some embodiments, the light-scattering body 331 may include titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ), aluminum oxide (Al 2 O 3 ), indium oxide (In 2 O 3 ), zinc oxide (ZnO), or tin oxide (SnO 2) such as metal oxides, and may include materials such as acrylic resin or urethane resin as the organic particles, but are not limited thereto.

[0144] The second light-transmitting member WCL1 may be disposed in a space separated by the bank BK in the second light-emitting region ELA2 and the second light-transmitting region TA2. The second light-transmitting member WCL1 may be in direct contact with the first capping layer CPL1 and the bank BK.

[0145] The second light-transmitting member WCL1 may be a wavelength conversion pattern for converting or shifting the peak wavelength of incident light to light having another specific peak wavelength and emitting the light having the other specific peak wavelength. The second light-transmitting member WCL1 may convert the light of the first color emitted from the light-emitting element layer EML into light of the second color and emit the light of the second color. Specifically, if the emitted light provided from the second light-emitting element as described above is blue light, the blue light may pass through the second light-transmitting member WCL1 and the second filter pattern region 322a of the second color filter 322, and be converted into green light having a peak wavelength in the range of 510 nm to about 550 nm before being emitted to the outside of the display device 10. In other words, the second emitted light L2 transmitted through the second light-transmitting region TA2 from the second light-emitting region ELA2 and emitted to the outside may be green light.

[0146] The second light-transmitting member WCL1 may include a base resin 330, a light scatterer 331 disposed to be dispersed in the base resin 330, and a first wavelength shifter 332 disposed to be dispersed in the base resin 330.

[0147] The first wavelength shifter 332 may convert or shift the peak wavelength of incident light to another specific peak wavelength. The first wavelength shifter 332 may convert the emitted light, which is blue light provided from the second light-emitting element, into green light having a single peak wavelength in the range of 510 nm to about 550 nm.

[0148] In some embodiments, the first wavelength shifter 332 may be a quantum dot, a quantum rod, or a phosphor, but is not limited thereto. Hereinafter, for ease of explanation, the case where the first wavelength shifter 332 is a quantum dot will be mainly described. A quantum dot may be a particulate material that emits a specific color when an electron transitions from the conduction band to the valence band. A quantum dot may be a semiconductor nanocrystal material. A quantum dot may have a specific bandgap depending on its composition and size to absorb light and then emit light having a unique wavelength. Examples of the semiconductor nanocrystals of quantum dots may include group IV element or compound nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI nanocrystals, or any combination thereof.

[0149] The Group II-VI compounds may be selected from the group consisting of: binary compounds selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; ternary compounds selected from the group consisting of InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and mixtures thereof; and quaternary compounds selected from the group consisting of CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof.

[0150] The Group III-V compounds may be selected from the group consisting of: binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof.

[0151] Group IV-VI compounds may be selected from the group consisting of: binary compounds selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. The Group IV element may be selected from the group consisting of Si, Ge, and mixtures thereof. The Group IV compound may be a binary compound selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0152] Here, the binary, ternary, or quaternary compound may be present in the particles at a uniform concentration, or may be present in the same particle in a state where the concentration is partially different. In addition, the quantum dots may have a core-shell structure in which one quantum dot surrounds another quantum dot. The interface between the core and the shell may have a concentration gradient in which the concentration of the elements present in the shell decreases towards the core.

[0153] In some embodiments, the quantum dots may have a core-shell structure including a core containing the nanocrystals described above and a shell surrounding the core. The shell of the quantum dots may serve as a protective layer for maintaining semiconductor properties by preventing chemical modification of the core and / or a charging layer for imparting electrophoretic properties to the quantum dots. The shell may be a single layer or multiple layers. The interface between the core and the shell may have a concentration gradient in which the concentration of the elements present in the shell decreases towards the core. Examples of the shell of the quantum dots may include metal oxides or non-metal oxides, semiconductor compounds, or any combination thereof.

[0154] For example, examples of metal oxides or non-metal oxides may include binary compounds such as SiO 2 , Al 2 O 3 , TiO 2 , ZnO, MnO, Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 or NiO, or ternary compounds such as MgAl 2 O 4 , CoFe 2 O 4 , NiFe 2 O4 or CoMn 2 O 4 ternary compound, but the present disclosure is not limited thereto.

[0155] In addition, examples of semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, and AlSb, etc., but the present disclosure is not limited thereto.

[0156] The light emitted by the first wavelength shifter 332 may have a full width at half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, about 40 nm or less, or about 30 nm or less, and through this, the color purity and color reproducibility of the colors displayed by the display device 10 can be further improved. In addition, the light emitted by the first wavelength shifter 332 may be emitted in several directions regardless of the incident direction of the incident light. Through this, the side visibility of the second color displayed in the second light-transmitting region TA2 can be improved.

[0157] Some of the emitted light provided by the second light-emitting element may not be converted into green light by the first wavelength shifter 332 and may be emitted by transmitting through the second light-transmitting member WCL1. The component of the emitted light whose wavelength is not converted by the second light-transmitting member WCL1 and enters the second filter pattern region 322a of the second color filter 322 may be blocked by the second filter pattern region 322a. On the other hand, the green light converted by the second light-transmitting member WCL1 among the emitted light transmits through the second filter pattern region 322a and is emitted to the outside. That is, the second emitted light L2 emitted to the outside of the display device 10 through the second light-transmitting region TA2 may be green light.

[0158] The third light-transmitting member WCL2 may be disposed in the space separated by the bank BK in the third light-emitting region ELA3 and the third light-transmitting region TA3. The third light-transmitting member WCL2 may be in direct contact with the first capping layer CPL1 and the bank BK.

[0159] The third light-transmitting member WCL2 may be a wavelength conversion pattern configured to convert or shift the peak wavelength of incident light to light having another specific peak wavelength and emit the light having the other specific peak wavelength. Specifically, if the emitted light provided from the third light-emitting element as described above is blue light, the blue light may pass through the third light-transmitting member WCL2 and the third filter pattern region 323a of the third color filter 323, be converted into red light having a peak wavelength in the range of about 610 nm to about 650 nm, and be emitted to the outside of the display device 10. In other words, the third emitted light L3 transmitted through the third light-transmitting region TA3 from the third light-emitting region ELA3 and emitted to the outside may be red light.

[0160] The third light-transmitting member WCL2 may include a base resin 330, a light scatterer 331 disposed to be dispersed in the base resin 330, and a second wavelength shifter 333 disposed to be dispersed in the base resin 330.

[0161] The second wavelength shifter 333 may convert or shift the peak wavelength of incident light to another specific peak wavelength. The second wavelength shifter 333 may convert the emitted light, which is blue light provided from the third light-emitting element, into red light having a single peak wavelength in the range of about 610 nm to about 650 nm and emit the red light. In some embodiments, the second wavelength shifter 333 may be a quantum dot, a quantum rod, or a phosphor, but is not limited thereto. When the second wavelength shifter 333 is a quantum dot, it has substantially the same configuration as when the first wavelength shifter 332 is a quantum dot as described above. Therefore, any redundant description will be omitted.

[0162] Some of the emitted light provided from the third light-emitting element may not be converted into red light by the second wavelength shifter 333 and may be emitted by passing through the third light-transmitting member WCL2. A component of the emitted light that enters the third filter pattern region 323a of the third color filter 323 and is not converted by the third light-transmitting member WCL2 may be blocked by the third filter pattern region 323a. On the other hand, the red light converted by the third light-transmitting member WCL2 in the emitted light passes through the third filter pattern region 323a and is emitted to the outside. That is, the third emitted light L3 emitted to the outside of the display device 10 through the third light-transmitting region TA3 may be red light.

[0163] The second capping layer CPL2 may be disposed on the bank BK, the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2 and prevent impurities such as moisture or air from the outside from damaging or contaminating the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2. The second capping layer CPL2 may cover the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2.

[0164] The spacer layer SPC may be disposed on a surface of the second cover layer CPL2. The spacer layer SPC may maintain a cell gap between the substrate SUB and the opposing substrate TSUB. The spacer layer SPC may surround the light transmissive members (i.e., the first light transmissive member TPL, the second light transmissive member WCL1, and the third light transmissive member WCL2) in a plan view. The spacer layer SPC may be disposed in the non-light emitting area NELA and the light blocking area BA. The spacer layer SPC may not be located in the light emitting areas ELA1, ELA2, and ELA3 and the light transmissive areas TA1, TA2, and TA3.

[0165] In some embodiments, the spacer layer SPC may include a photocurable transparent organic material or a photocurable organic material containing a light blocking material, but is not limited thereto. In some embodiments, the spacer layer SPC may be made of an acrylic resin (e.g., methacrylic resin), polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, or perylene resin, etc., but is not limited thereto.

[0166] A filling layer FIL may be disposed between the opposing substrate TSUB and the substrate SUB. The filling layer FIL may be inserted between the wavelength conversion layer WCL and the thin film encapsulation layer TFEL to fill the space between the wavelength conversion layer WCL and the thin film encapsulation layer TFEL. Specifically, in some embodiments, the filling layer FIL may be in direct contact with the upper inorganic layer TFE3 of the thin film encapsulation layer TFEL and the second cover layer CPL2 of the wavelength conversion layer WCL. However, the present disclosure is not limited thereto.

[0167] In some embodiments, the filling layer FIL may be made of a material having an extinction coefficient that is substantially zero. There is a correlation between the refractive index and the extinction coefficient, and as the refractive index decreases, the extinction coefficient also decreases. In addition, when the refractive index is 1.7 or less, the extinction coefficient may substantially converge to zero. In some embodiments, the filling layer FIL may be made of a material having a refractive index of 1.7 or less, and accordingly, light provided from the light emitting element ED can be prevented or minimized from being absorbed while passing through the filling layer FIL. In some embodiments, the filling layer FIL may be made of an organic material having a refractive index of 1.4 to 1.6.

[0168] The organic layer TFE2 of the thin film encapsulation layer TFEL can be applied on the substrate SUB by a solution process as will be described later. For example, the organic layer TFE2 can be applied on the substrate SUB by inkjet printing. The organic layer TFE2 can fill the steps formed by the pixel defining film 170 and planarize the upper part. If the spreadability of the organic layer TFE2 is low when applying the organic layer TFE2, since the organic layer TFE2 does not fill the above steps, the end user of the display device may find stains due to the non-spreading of the organic layer TFE2.

[0169] Therefore, the present inventors disclose a method for manufacturing an organic layer composition capable of improving the spreadability of the organic layer TFE2 by a process of manufacturing an organic layer material that affects the spreadability of the organic layer TFE2, and a method for manufacturing a display device using the method.

[0170] Figure 7 is a flowchart schematically illustrating a method for manufacturing an organic layer composition according to an embodiment. Figure 8 is a view schematically illustrating an apparatus for manufacturing an organic layer composition. Figure 9 is a graph illustrating the change in temperature of the tank of the manufacturing apparatus over time.

[0171] Reference Figure 7 , the method for manufacturing an organic layer composition may include a raw material preparation step (step S100), an input and stirring of raw materials step (step S200), and a cooling step (step S300).

[0172] The raw material preparation step (step S100) may be a step of preparing raw materials for manufacturing the organic layer composition. The organic layer composition may include a monomer, an initiator, and a solvent.

[0173] The monomer may include an acrylic compound or an epoxy compound. For example, the monomer may include an acrylic compound, and the acrylic compound may be an acrylate. Examples of the acrylate may include, for example, 1,4-butanediol di(meth)acrylate, 1,3-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, 1,8-octanediol di(meth)acrylate, 1,9-octanediol diacrylate, 1,12-dodecanediol di(meth)acrylate, ethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, polyolefin glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 2-hydroxy-1,3-dimethylacryloyloxypropane, dioxane diol di(meth)acrylate, glycerol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, 1,10-decanediol di(meth)acrylate, 2-methyl-1,8-octanediol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, 1,12-dodecane di(meth)acrylate, butyl ethyl propylene glycol di(meth)acrylate, 3-methyl-1,5-pentanediol di(meth)acrylate, dicyclopentyl di(meth)acrylate, cyclohexane-1,4-dimethanol di(meth)acrylate, tricyclodecane dimethanol di(meth)acrylate, dimethylol dicyclopentane di(meth)acrylate, neopentyl glycol-modified trimethylolpropane di(meth)acrylate, and adamantane di(meth)acrylate, but are not limited thereto.

[0174] Based on the total weight of the organic layer composition, the content of the monomer may be 10 parts by weight to 50 parts by weight. When the monomer satisfies the above range, the monomer may have an excellent photocuring rate.

[0175] The initiator may include a photoinitiator or a photoinitiator and a thermal initiator. The photoinitiator may be activated in a wavelength band of 360 nm to 400 nm (e.g., the UV wavelength band). The photoinitiator may include, for example, an oxime compound, an acetophenone compound, a thioxanthone compound, a benzophenone compound, or any combination thereof.

[0176] Oxime compounds can include, for example, 1,2-octanedione, 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one, 1-(4-phenylsulfanyl-phenyl)-butane-1,2-dione-2-oxime-O-benzoate, 1-(4-phenylsulfanyl-phenyl)-octane-1,2-dione-2-oxime-O-benzoate, 1-(4-phenylsulfanyl-phenyl)-1-ketoxime-O-acetate, 1-(4-phenylsulfanyl-phenyl)-1-butan-1-one-2-oxime-O-acetate, 2-(O-benzoyl-oxime)-1-[4-(phenylthio)phenyl]-1,2-octanedione, 1-(O-acetyl-oxime)-1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]ethanone, O-ethoxycarbonyl-α-oximino-1-phenyl-propan-1-one, or any combination thereof.

[0177] Acetophenone compounds can include, for example, 4-phenoxydichloroacetophenone, 4-tert-butyldichloroacetophenone, 4-tert-butyltrichloroacetophenone, 2,2-diethoxyacetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, 1-(4-isopropylphenyl)-2-hydroxy-2-methylpropan-1-one, 1-(4-dodecylphenyl)-2-hydroxy-2-methylpropan-1-one, 4-(2-hydroxyethoxy)-phenyl-(2-hydroxy-2-propyl)ketone, 1-hydroxycyclohexylphenylketone, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinopropan-1-one, or any combination thereof.

[0178] Thioxanthone compounds can include, for example, thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, isopropylthioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, or any combination thereof.

[0179] Benzophenone compounds can include, for example, benzophenone, benzoylbenzoic acid, methyl benzoylbenzoate, 4-phenylbenzophenone, hydroxybenzophenone, 4-benzoyl-4'-methyldiphenyl sulfide, 3,3'-dimethyl-4-methoxydiphenylmethanone, or any combination thereof.

[0180] A thermal initiator can be a material activated by heat. The thermal initiator can include, for example, azo compounds such as 2,2'-azobis(2-methylbutyronitrile), 2,2'-azobis(isobutyronitrile), 2,2'-azobis(2,4-dimethylvaleronitrile), 4,4-azobis(4-cyanovaleric acid), 1,1'-azobis(cyclohexanecarbonitrile), and 2,2'-azobis(4-methoxy-2,4-dimethylvaleronitrile); peroxides such as bis(4-butylcyclohexyl) peroxydicarbonate, bis(2-ethylhexyl) peroxydicarbonate, butyl peroxypivalate, di-n-propyl peroxydicarbonate, diisopropyl peroxydicarbonate, diethoxyethyl peroxydicarbonate, diethoxyhexyl peroxydicarbonate, hexyl peroxydicarbonate, dimethoxybutyl peroxydicarbonate, bis(3-methoxy-3-methylbutyl) peroxydicarbonate, dibutyl peroxydicarbonate, di(hexadecyl) dicarbonate, ditetradecyl peroxydicarbonate, 2,2-dimethylpropaneperoxoic acid-1,1,3,3-tetramethylbutyl ester, hexyl peroxypivalate, butyl peroxypivalate, trimethylhexanoyl peroxide, dihydroxybutyl peroxypivalate, pentyl peroxypivalate, butyl peroxypivalate, tert-butyl peroxyoctoate, amyl neopentanoate peroxide, tert-butyl peroxypivalate, tert-amyl peroxy-2-ethylhexanoate, lauroyl peroxide, dilauroyl peroxide, didecanoyl peroxide, benzoyl peroxide, dibenzoyl peroxide, 2,2-bis(tert-butylperoxy)butane, 1,1-bis(tert-butylperoxy)cyclohexane, 2,5-bis(tert-butylperoxy)-2,5-dimethylhexane, 2,5-bis(tert-butylperoxy)-1-methylethyl)benzene, 1,1-bis(tert-butylperoxy)-3,3,5-trimethylcyclohexane, tert-butyl hydroperoxide, tert-butyl peroxide, tert-butyl peroxybenzoate, tert-butyl peroxyisopropyl carbonate, cumene hydroperoxide, dicumyl peroxide, dilauroyl peroxide, or 2,4-pentanedione peroxide; tert-butyl peroxyacetate; peracetic acid; potassium persulfate; or any combination thereof.

[0181] Based on the total weight of the organic layer composition, the content of the initiator can be from 1 part by weight to 5 parts by weight. When the content of the initiator satisfies the above range, the polymerization reaction of the organic layer composition can be sufficiently carried out.

[0182] The solvent can be a material that is compatible with the monomer and the initiator but does not react with them.

[0183] The solvent can be a compound, for example, alcohols such as methanol and ethanol; ethers such as dichloroethyl ether, n-butyl ether, diisopentyl ether, methyl phenyl ether, and tetrahydrofuran; ethylene glycol ethers such as ethylene glycol methyl ether, ethylene glycol ethyl ether, and propylene glycol methyl ether; cellosolve acetates such as methyl cellosolve acetate, ethyl cellosolve acetate, and diethyl cellosolve acetate; carbitols such as methyl ethyl carbitol, diethyl carbitol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol methyl ethyl ether, and diethylene glycol diethyl ether; propylene glycol alkyl ether acetates such as propylene glycol methyl ether acetate, propylene glycol monoethyl ether acetate, and propylene glycol propyl ether acetate; aromatic hydrocarbons such as toluene and xylene; ketones such as methyl ethyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone, methyl n-propyl ketone, methyl n-butyl ketone, methyl n-pentyl ketone, and 2-heptanone; saturated aliphatic monocarboxylic acid alkyl esters such as ethyl acetate, n-butyl acetate, and isobutyl acetate; lactic acid alkyl esters such as methyl lactate and ethyl lactate; hydroxyacetic acid alkyl esters such as methyl hydroxyacetate, ethyl hydroxyacetate, and butyl hydroxyacetate; alkoxyacetic acid alkyl esters such as methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, and ethyl ethoxyacetate; 3-hydroxypropionic acid alkyl esters such as methyl 3-hydroxypropionate and ethyl 3-hydroxypropionate; 3-alkoxypropionic acid alkyl esters such as methyl 3-methoxypropionate, ethyl 3-methoxypropionate, ethyl 3-ethoxypropionate, and methyl 3-ethoxypropionate; 2-hydroxypropionic acid alkyl esters such as methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate, and propyl 2-hydroxypropionate; 2-alkoxypropionic acid alkyl esters such as methyl 2-methoxypropionate, ethyl 2-methoxypropionate, ethyl 2-ethoxypropionate, and methyl 2-ethoxypropionate; 2-hydroxy-2-methylpropionic acid alkyl esters such as methyl 2-hydroxy-2-methylpropionate and ethyl 2-hydroxy-2-methylpropionate; 2-alkoxy-2-methylpropionic acid alkyl esters such as methyl 2-methoxy-2-methylpropionate and ethyl 2-ethoxy-2-methylpropionate; esters such as 2-hydroxyethyl propionate, ethyl 2-hydroxy-2-methylpropionate, hydroxyethyl acetate, and methyl 2-hydroxy-3-methylbutyrate; or keto acid esters such as ethyl pyruvate. The solvent can include N-methylformamide, N,N-dimethylformamide, N-methylformanilide, N-methylacetamide, N,N-dimethylacetamide, N-methylpyrrolidone, dimethyl sulfoxide, benzyl ethyl ether, dihexyl ether, acetylacetone, isophorone, caproic acid, caprylic acid, 1-octanol, 1-nonanol, benzyl alcohol, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyrolactone, ethylene carbonate, propylene carbonate, phenyl cellosolve acetate, or any combination thereof.

[0184] Based on the total weight of the organic layer composition, the content of the solvent can be 45 parts by weight to 89 parts by weight. In this case, since the organic layer composition has an appropriate viscosity, the processability can be excellent.

[0185] In addition to the above monomers, initiators, and solvents, the organic layer composition can further include other monomers. Furthermore, the organic layer composition can further include additives as needed. Examples of additives can include, for example, light stabilizers, crosslinking agents, antioxidants, chain transfer agents, photosensitizers, polymerization inhibitors, leveling agents, surfactants, adhesion imparting agents, plasticizers, ultraviolet absorbers, storage stabilizers, antistatic agents, inorganic fillers, pigments, dyes, etc., but are not limited thereto.

[0186] Reference Figure 7 and Figure 8 , and then the prepared raw materials are input into the manufacturing apparatus 400 and stirred (step S200).

[0187] The manufacturing apparatus 400 can include a tank 410 for accommodating the raw materials 420, a flow path 440 surrounding the tank 410, an inlet 430 for introducing a coolant into the flow path 440, an outlet 450 for discharging the coolant, a thermometer 460 for sensing the temperature in the tank 410, and a controller 470.

[0188] The raw materials 420 can be input into the tank 410, and the raw materials 420 can be stirred in the tank 410. The tank 410 can include a stirrer capable of stirring the raw materials 420, thereby stirring the raw materials 420. Although not illustrated, a heating device (e.g., a heating wire) can be provided in the tank 410 to heat the tank 410 so that the raw materials 420 in the tank 410 can be stirred and polymerized.

[0189] The flow path 440 can be provided to surround the tank 410. The flow path 440 can be a passage through which the coolant supplied through the inlet 430 flows. The inlet 430 can be provided at one end of the flow path 440, and the outlet 450 can be provided at the other end of the flow path 440. Thus, when the coolant is introduced from the inlet 430, the coolant can be discharged from the flow path 440 through the outlet 450.

[0190] The thermometer 460 can measure the temperature inside the tank 410. The thermometer 460 can measure the temperature of the raw materials 420 inside the tank 410 and monitor the temperature during the stirring and cooling of the raw materials 420. The thermometer 460 can be provided outside the tank 410 for the user to observe. The thermometer 460 can be connected to the controller 470 and transmit the measured temperature to the controller 470.

[0191] The controller 470 can be provided outside the tank 410. The controller 470 can automatically adjust the temperature and flow rate of the coolant according to the temperature value input from the thermometer 460 to control the manufacturing temperature of the organic layer composition. The controller 470 can be a proportional integral derivative (PID) controller.

[0192] The organic layer composition is manufactured by inputting the prepared raw material 420 into the manufacturing apparatus 400 configured as described above and stirring the input raw material 420. In the manufacturing apparatus 400, the raw material 420 can be stirred by setting the stirring temperature through the controller 470 to manufacture the organic layer composition. For example, the stirring temperature can be about 40°C to 60°C, but is not limited thereto.

[0193] Next, the organic layer composition manufactured in the manufacturing apparatus 400 is cooled (step S300).

[0194] In the cooling step of the organic layer composition, the temperature of the organic layer composition can be reduced to room temperature. For example, when the temperature of the organic layer composition manufactured after stirring is about 40°C, the temperature of the organic layer composition can be cooled to room temperature (e.g., 25°C).

[0195] The cooling step can be executed by the controller 470. When the target temperature and the cooling rate are input to the controller 470, the controller 470 can adjust the temperature and flow rate of the coolant by judging the temperature value input from the thermometer 460.

[0196] In an embodiment, when the organic layer composition is cooled, the cooling rate can be in the range of 0.37°C / min to 0.44°C / min.

[0197] When the organic layer composition is applied on a substrate, if the spreadability of the organic layer composition is low, defects will occur. The inventors have found that the cooling rate of the organic layer composition affects the spreadability.

[0198] Reference Figure 9 , if the cooling rate of the organic layer composition exceeds 0.44°C / min, when the inkjet printing method is used to apply the organic layer composition, impact defects will occur. In addition, if the cooling rate of the organic layer composition is less than 0.37°C / min, the spreadability of the organic layer composition on the substrate is reduced, resulting in defects such as spots visible on the display device.

[0199] These defects are caused by the recrystallization of the crystalline materials among the monomers of the organic layer composition as the cooling time of the organic layer composition increases. Accordingly, an unstable dissolution state of the solid components is generated, which reduces the spreadability of the organic layer composition during inkjet printing. In addition, during the stirring process of the raw materials, the photoinitiator forms dynamic covalent bonds with impurities, thereby increasing the molecular weight, which in turn increases the viscosity of the organic layer composition and reduces the spreadability.

[0200] Therefore, in the present embodiment, since the organic layer composition is cooled at a cooling rate ranging from 0.37 °C / min to 0.44 °C / min, the quality of the display device can be improved by preventing the reduction of the spreadability of the organic layer composition. The enhanced spreadability of the organic layer composition reduces defects during inkjet printing.

[0201] Hereinafter, a method for manufacturing a display device using the organic layer composition manufactured by the method for manufacturing an organic layer composition described above will be described.

[0202] Figures 10 to 12 is a cross-sectional view illustrating a method for manufacturing a display device according to an embodiment. Figures 10 to 12 Illustrates a method for manufacturing a display device until a thin film encapsulation layer TFEL including an organic layer TFE2.

[0203] First, referring to Figure 10 , a light-emitting element layer EML is formed on a substrate SUB.

[0204] Specifically, a buffer layer 120, a lower metal layer BML, a first insulating layer 130, a semiconductor layer ACT, a gate electrode GE, a gate insulating layer 140, a second insulating layer 150, a source electrode SE, a drain electrode DE, a third insulating layer 155, a fourth insulating layer 160, a light-emitting element ED, and a pixel defining film 170 are formed on the substrate SUB.

[0205] The lower metal layer BML, the semiconductor layer ACT, the gate electrode GE, the source electrode SE, the drain electrode DE, and the anode electrode ANO of the light-emitting element ED provided on the substrate SUB can be formed by depositing materials (such as metal materials) for forming each layer and patterning the materials using a mask. In addition, the buffer layer 120, the first insulating layer 130, the gate insulating layer 140, the second insulating layer 150, the third insulating layer 155, the fourth insulating layer 160, and the pixel defining film 170 provided on the substrate SUB can be formed by applying materials (such as insulating materials) for forming each layer, or if necessary, by a patterning process using a mask. The description of the structure of the multiple layers provided on the substrate SUB is the same as the description above. Therefore, any redundant description will be omitted.

[0206] In an embodiment, for a light-emitting element ED, an anode electrode ANO is formed on a fourth insulating layer 160, and a pixel defining film 170 that covers an edge of the anode electrode ANO is formed. Thereafter, the light-emitting element ED can be manufactured by forming a light-emitting layer OL on the anode electrode ANO and the pixel defining film 170, and forming a cathode electrode CE on the light-emitting layer OL.

[0207] Next, a lower inorganic layer TFE1 of a thin film encapsulation layer TFEL is formed on the light-emitting element layer EML. The lower inorganic layer TFE1 can be directly formed on the cathode electrode CE of the light-emitting element layer EML.

[0208] Next, referring to Figure 11 , an organic layer TFE2 is formed on a substrate SUB on which the lower inorganic layer TFE1 is formed.

[0209] The organic layer TFE2 can use the organic layer composition described above with reference to Figures 7 to 9 . The organic layer composition ORC can be manufactured by stirring and cooling raw materials. In an embodiment, the organic layer composition ORC can be cooled at a cooling rate in a range of 0.37 °C / min to 0.44 °C / min.

[0210] The organic layer can be formed by applying the organic layer composition using an inkjet printing method. For example, the organic layer composition ORC can be applied to the substrate SUB using an inkjet printing device IND. Since the organic layer composition ORC is cooled at a cooling rate within the above range, the quality of the display device 10 (see Figure 1 ) can be improved by reducing impact defects and improving spreadability during inkjet printing.

[0211] Next, referring to Figure 12 , the thin film encapsulation layer TFEL is manufactured by stacking an upper inorganic layer TFE3 on the organic layer TFE2. Next, although not illustrated in Figure 12 , as illustrated in Figure 6 , the display device 10 (see Figure 1 ) is manufactured by forming a color filter layer CFL, a wavelength conversion layer WCL, and a filling layer FIL on a counter substrate TSUB and bonding them to the substrate SUB.

[0212] Hereinafter, a method for manufacturing the above-described organic layer composition and experimental examples of a display device manufactured using the method will be disclosed.

[0213] <Manufacturing Example>

[0214] The same organic layer composition was used to fabricate organic layer compositions at different cooling rates of 0.45 °C / min, 0.41 °C / min, 0.42 °C / min, and 0.35 °C / min, respectively, and a display device as Figure 6 illustrated in

[0215] <Experimental Example>

[0216] The impact defects and stain defects of the display device were actually measured, and the results of AI prediction using a confusion matrix and the actually measured results are shown in Table 1 below.

[0217] [Table 1]

[0218]

[0219] Referring to Table 1, the display device fabricated using the organic layer composition fabricated at a cooling rate of 0.45 °C / min had impact defects in both AI prediction and actual measurement. The display device fabricated using the organic layer composition fabricated at a cooling rate of 0.35 °C / min had stain defects in both AI prediction and actual measurement. On the other hand, the display devices fabricated using the organic layer compositions fabricated at cooling rates of 0.41 °C / min and 0.42 °C / min had no defects in both AI prediction and actual measurement.

[0220] From these results, it was confirmed that the organic layer composition fabricated by cooling at a cooling rate in the range of 0.37 °C / min to 0.44 °C / min can prevent impact defects and stain defects in the display device.

[0221] At the end of the detailed description, those skilled in the art will appreciate that many changes and modifications can be made to the preferred embodiments without substantially departing from the principles of the present invention. Therefore, the preferred embodiments of the present invention disclosed are used only in a general and descriptive sense and not for the purpose of limitation.

Claims

1. A method for producing an organic layer composition, the method comprising: Prepare the ingredients; forming an organic layer composition by inputting the raw material into a production device and stirring the raw material; as well as The organic layer composition was cooled at a cooling rate of 0.37° C. / min to 0.44° C. / min.

2. The method according to claim 1, wherein: The raw materials include monomers, initiators and solvents. wherein the monomer is an acrylic compound or an epoxy compound, and The initiator comprises a photoinitiator or a combination of a photoinitiator and a thermal initiator.

3. The method according to claim 1, wherein: The manufacturing device comprises: a tank for containing the raw material; a flow path surrounding the tank; an inlet for introducing a coolant into the flow path; an outlet through which the coolant is discharged from the flow path; a thermometer disposed outside the tank and sensing a temperature within the tank; and The controller is arranged outside the tank.

4. The method according to claim 3, wherein: The controller receives the temperature from the thermometer and controls the temperature and flow rate of the coolant, and The controller is a proportional-integral-derivative controller.

5. The method according to claim 1, wherein: The organic layer composition was cooled to 25°C.

6. A method for manufacturing a display device, the method comprising: forming a light emitting element layer including a light emitting element on a substrate; forming a lower inorganic layer on the light emitting element layer; forming an organic layer by applying an organic layer composition manufactured by the method for manufacturing an organic layer composition according to any one of claims 1 to 5 on the lower inorganic layer; as well as An upper inorganic layer is formed on the organic layer.

7. The method according to claim 6, The forming of the light emitting element layer comprises: forming a pixel electrode on the substrate; forming a pixel definition film covering an edge of the pixel electrode; forming a light-emitting layer on the pixel electrode and the pixel defining film; as well as forming a common electrode on the light emitting layer, The forming of the lower inorganic layer includes: forming the lower inorganic layer on the common electrode of the light emitting element layer.

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