Laser beam shaping and patterning for fabrication

Abstract

A laser manufacturing system includes a laser patterning unit having a light addressed light valve and an image repeater capable of directing a patterned laser beam from the laser patterning unit onto a part. In some embodiments, the patterned laser beam may ablatively remove material from the part or induce selected chemical reactions or transitions in the part material.

Description

[0001] Related Applications

[0002] This disclosure is part of a non - provisional patent application claiming the priority benefit of U.S. Patent Application No. 63 / 419,875, filed Oct. 27, 2022, which is incorporated herein by reference in its entirety. Technical Field

[0003] This disclosure generally relates to a system and method for high - power laser processing of materials. In one embodiment, fabrication is supported by a two - dimensional laser patterning unit having a light - addressed light valve that can provide a two - dimensional patterned laser beam that can ablate - remove material from a part or selectively induce a patterned chemical reaction in the part material.

[0004] Background

[0005] Microelectronic devices are key components in the automotive, industrial, medical, telecommunications, storage device, and consumer electronics industries. The fabrication of microelectronic devices typically requires precise spatial control to assemble semiconductor, insulator, and conductor materials that can be integrated with microelectronic device components (such as small - scale transistors, capacitors, inductors, resistors, diodes, and insulators and conductors).

[0006] Traditional ways of providing integrated components rely on lithography. Lithographic processing uses expensive photomasks to pattern the exposure with a resist, creating and connecting complex patterns on a working surface composed of epitaxially grown multi - layer structures (such as semiconductor p - n junction diodes). Etching and physical vapor deposition processes supplement this process to, for example, discretize microelectronic components on the surface of a wafer and provide electrical paths.

[0007] There is a need for processes and equipment that can integrate or replace multiple patterning, connection, or material - processing steps using a patterned laser beam shaping system in a controlled environment to reduce costs and increase manufacturing throughput.

[0008] Overview

[0009] In some embodiments, a laser manufacturing system can include a laser patterning unit having a light - addressed light valve. An image relay can be positioned and capable of directing a patterned laser beam from the laser patterning unit onto a part, where the patterned laser beam ablates - removes material from the part during operation.

[0010] In some embodiments, the part has multiple material layers, where a selected layer is removable.

[0011] In some embodiments, the patterned laser beam can further induce a selected chemical reaction in the part material.

[0012] In some embodiments, the patterned laser beam may further perform laser peening on the part material.

[0013] In some embodiments, the laser patterning unit provides one-dimensional patterning.

[0014] In some embodiments, the laser patterning unit provides two-dimensional patterning.

[0015] In another embodiment, a laser manufacturing system includes a laser patterning unit having a light-addressable light valve. An image relay is positioned and capable of directing the patterned laser beam from the laser patterning unit onto the part, wherein the patterned laser beam is arranged to induce a selected chemical reaction or transformation in the part material.

[0016] In some embodiments, the patterned laser beam may further ablate and remove material from the part.

[0017] In another embodiment, a laser manufacturing method includes the step of providing a laser patterning unit having a light-addressable light valve. Using an image relay to direct the patterned laser beam from the laser patterning unit onto the part, wherein the patterned laser beam is used for at least one of the following: inducing a selected chemical reaction and ablating and removing material from the part using the patterned laser beam. Brief Description of the Drawings

[0019] Non-limiting and non-exhaustive embodiments of the present disclosure are described with reference to the following drawings, wherein like reference numerals refer to like parts throughout the various drawings unless otherwise specified.

[0020] Figure 1 An embodiment of a system having a laser-based shaping beam for controlling ablation and reaction regions on a working surface is shown;

[0021] Figure 2A A programmable mask-based, laser-based shaping beam ablation system is shown;

[0022] Figure 2B A programmable mask-based, laser-based shaping beam system is shown that is capable of spatially controlling the reaction, chemical composition, or other processing of a working surface;

[0023] Figure 3 Another embodiment of a laser processing system capable of directing one-dimensional or two-dimensional beams onto a part is shown;

[0024] Figure 4 A method of operating a laser manufacturing system capable of providing one-dimensional or two-dimensional beams is shown; and

[0025] Figure 5 A laser manufacturing system is shown that includes a switching station system capable of reusing patterned two-dimensional energy.

[0026] Detailed Description

[0027] In the following description, reference is made to the accompanying drawings, which form a part of the description and in which are shown, by way of illustration, specific exemplary embodiments in which the present disclosure may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the concepts disclosed herein, and it should be understood that various disclosed embodiments may be modified and other embodiments may be utilized without departing from the scope of the present disclosure. Accordingly, the following detailed description should not be construed as limiting.

[0028] Laser manufacturing systems suitable for microelectronic manufacturing, precision tool manufacturing, or materials processing should be able to efficiently process a wide range of materials with high throughput. For example, systems that can provide arbitrarily shaped laser energy or other forms of directed energy can be used to drive spatially controlled material transformations within the shape of the coverage area of the energy delivered to the work surface. In some embodiments, patterning can be achieved by moving a laser beam across the surface. An optically addressable light valve that enables dynamic, programmable laser beam shaping can be used to provide patterning. In some embodiments, laser peening, ablation, or cutting using subtractive manufacturing techniques is possible. Laser processing can be used to induce changes in crystal structure, affect stress patterns, or otherwise chemically or physically modify to form structures with desired properties.

[0029] In other embodiments useful in microelectronic manufacturing, such a laser manufacturing system can enable the use of local ablation, where an insulating native layer is removed to expose the underlying conductive substrate for providing a direct path for electrical contact. In other applications (typically below those required for ablation), the laser beam energy can drive a chemical reaction that can transform the material at the work surface by forming a new compound material using reactive species in the surrounding medium. As a result of these reactions, electronic properties can be locally defined or patterned on the surface of the workpiece to produce interconnected functional microelectronic components. The steps of etching and surface material transformation can be included in a single laser processing system within an interchangeable reactive or inert medium.

[0030] In some embodiments, the patterned laser beam can be shaped to provide patterned heating of a part or workpiece, and in some embodiments, reactive or thermally controlled surface or interface electrical properties can be provided by subtractive (e.g., ablation) or additive processes (by adding chemical elements from the surrounding environment (e.g., oxygen (O) from the air) to oxidize a material such as a metal (M) to form a metal oxide (MO x)Semiconductor or insulator). The compound surface material can also be generated according to a single material that reacts by driving the formation of thermal activation oxidation (oxygen), nitrification (nitrogen), carbide (carbon), or other elements for compound formation provided by the surrounding gaseous atmosphere, transparent liquid, or transparent solid adjacent to the processed surface or interface. Alternatively or additionally, control of the insulating surface properties, metallic surface properties, or semiconductor surface properties can be achieved by using patterned laser energy exposure and absorption to ablate the native (or grown) insulating layer (such as a metal oxide) and expose the underlying conductive metal.

[0031] In some embodiments, exposure to a uniformly shaped beam intensity enables the achievement of a uniform interface temperature that supports uniform control of the interfacial reaction process and the formation of a uniform layer (as opposed to, for example, a typical Gaussian beam with non-uniform intensity and heating, which produces a non-uniform reaction field and a non-uniform material layer with non-uniform electrical properties and composition).

[0032] Figure 1 An embodiment of a system 100 is shown that has a laser-based shaped beam for controlling ablation and reaction regions on a working surface and uses a programmable mask. The system can include a process laser reading beam 102 of a first wavelength. The beam can pass through a homogenizer (not shown) to convert the Gaussian-shaped beam into a uniformly distributed laser reading beam 103 of the first wavelength. System 100 also supports a second wavelength with optional patterning (i.e., Figure 1An example of the write beam 104 in the X shape in []. Each of the homogenized process laser read beam 103 and write beam 104 can be directed to a dichroic beam combiner 105. The dichroic beam combiner 105 selectively reflects one of the first wavelength or the second wavelength and transmits the other of the first wavelength or the second wavelength, so as to combine the homogenized process laser read beam 103 and write beam 104, thereby generating a combined read and write beam 106. The combined read and write beam 106 passes through an optically addressable light valve (OALV) 107. The OALV 107 can be a transmissive or reflective pixel-addressable light valve. In one embodiment, the pixel-addressable light valve includes both a liquid crystal module having a polarization element and a light projection unit providing a two-dimensional input pattern, which can separate the beam by splitting the light source into a negative patterned image and a positive patterned image. The combined read and write beam 106 passes through the OALV 107, and then the OALV 107 spatially imprints a pattern in the polarization space of the drive beam. The desired polarization state of the light is allowed to continue to the rest of the optical system, while the unwanted polarization states are rejected and discarded into a beam dump or other energy rejection device. The patterned portion of the beam is transmitted as a transmitted process laser beam 108. The transmitted process laser beam 108 can include an image 109 provided from the OALV 107. The process laser beam 108 can pass through a series of image relay optics 110, after which the output transmitted process laser beam 111 impinges on a positioning mirror 112. The output beam 113 from the positioning mirror 112 passes through an imaging lens 114. The optical system can be moved in, for example, the XY directions (as shown by arrow 115). In one embodiment, the final imaging beam 116 can be directed to intersect a work surface 118 (which can be a structure or other material) at a location 117, where the final imaging beam 116 performs a subtractive process, induces a chemical reaction, or ablates a portion of the surface material (e.g., resulting in the removal of an oxide and the generation of an exposed conductive patch). In one embodiment, for example, the substrate material can be ablated to remove aluminum oxide and leave a conductive region of aluminum. In an example implementation, the imaging beam 116 can be an ultrashort pulse beam (e.g., picosecond). In this example, a thin oxide layer can be removed without damaging the underlying substrate.

[0033] Figure 2A FIG. shows a programmable mask-based, laser-based shaped beam ablation system 200A that enables processing of a work surface that can be positioned in an optional chamber or environmentally controlled volume 210A. In one example, the system described in [] can be used Figure 1 to perform an ablation process. In one embodiment, a programmable mask (corresponding to Figure 1 the OALV 107) is used for the shaped process laser beam 202A (corresponding to Figure 1The imaging beam 116) is patterned. The process laser beam 202A can be patterned with a rectangular pattern 203A. As a result, an ablation pattern 204A in the shape of a rectangle is created. In a second example, the process laser beam 205A can be patterned with a circular pattern 206A. As a result, an ablation pattern 207A in the shape of a circle is created. A pattern can be created in the insulating layer 208A, which can be, for example, a metal oxide located on the substrate 209A. The ablation techniques described can be used to create accessible conductive contact points on a semiconductor wafer. Although the ablation pattern 204A in the shape of a rectangle and the ablation pattern 207A in the shape of a circle are shown as examples, it should be understood that these are only examples, and any pattern that can be generated using a programmable mask (e.g., the programmable mask described with respect to Figure 1 the OALV 107) can be ablated. Although Figure 2A the structure shown in

[0034] Figure 2B is a flat surface, it should be understood that ablation patterns can also be performed on three-dimensional structures, including those having holes, cavities, or channels, edges, curved or irregular surfaces, or protrusions or projections. Figure 1 is described. In a first example, a programmable mask (corresponding to Figure 1 the OALV 107) is used to pattern the shaped process laser beam 202B (corresponding to Figure 1 the imaging beam 116). The process laser beam 202B can be patterned with a rectangular pattern 203B. As a result, a rectangular-shaped region 204B with controlled material properties is created. In a second example, the process laser beam 205B can be patterned with a circular pattern 206B. As a result, a circular-shaped region 207B with controlled material properties is created. A pattern can be created in the insulating layer 208B (e.g., a metal oxide above the substrate 209B). In some embodiments, a region with controlled material properties can be created by heating the region in a surrounding or controlled environment to a level below that required for ablation. For example, heating a copper metal layer in air can form a copper oxide insulating layer. Depending on the heating or atmosphere (e.g., different gases, vacuum, liquid), different oxidation levels (e.g., CuO or CuO 2)。By using various different atmospheres and laser parameters, the properties of the material can be controlled by introducing dopants to create insulators, conductors, or semiconductors. In some embodiments, complex three-dimensional structures with different material properties in different regions can be obtained.

[0035] Figure 3 An embodiment of a laser machining system 300 is shown. As Figure 3 shown, the laser source and amplifier 312 can be configured as a continuous laser or a pulsed laser. In other embodiments, the laser source includes a pulsed electrical signal source, such as an arbitrary waveform generator or an equivalent that acts on a continuous laser source, such as a laser diode. In some embodiments, this can also be achieved by a fiber laser or a fiber-emitted laser source, which is then modulated by an acousto-optic or electro-optic modulator. In some embodiments, a high-repetition-rate pulsed source using a Pockels cell can be used to generate a pulse train of any length.

[0036] Possible laser types include, but are not limited to: gas lasers, chemical lasers, dye lasers, metal vapor lasers, solid-state lasers (such as fiber), semiconductor (such as diode) lasers, free-electron lasers, gasdynamic lasers, "nickel-like" samarium lasers, Raman lasers, or nuclear-pumped lasers.

[0037] Gas lasers can include lasers such as: helium-neon lasers, argon lasers, krypton lasers, xenon ion lasers, nitrogen lasers, carbon dioxide lasers, carbon monoxide lasers, or excimer lasers.

[0038] Chemical lasers can include lasers such as: hydrogen fluoride lasers, deuterium fluoride lasers, COIL (chemical oxygen-iodine laser), or Agil (all-gas-phase iodine laser).

[0039] Metal vapor lasers can include lasers such as: helium-cadmium (HeCd) metal vapor lasers, helium-mercury (HeHg) metal vapor lasers, helium-selenium (HeSe) metal vapor lasers, helium-silver (HeAg) metal vapor lasers, strontium vapor lasers, neon-copper (NeCu) metal vapor lasers, copper vapor lasers, gold vapor lasers, or manganese (Mn / MnCl 2 ) vapor lasers. Rubidium or other alkali metal vapor lasers can also be used. Solid-state lasers can include lasers such as: ruby lasers, Nd:YAG lasers, NdCrYAG lasers, Er:YAG lasers, neodymium YLF (Nd:YLF) solid-state lasers, neodymium-doped yttrium orthovanadate (Nd:YVO4) lasers, neodymium-doped yttrium calcium oxyborate Nd:YCa 4 O(BO 3) 3 or simply referred to as Nd:YCOB, neodymium glass (Nd:glass) lasers, titanium sapphire (Ti:sapphire) lasers, thulium YAG (Tm:YAG) lasers, ytterbium YAG (Yb:YAG) lasers, ytterbium:2O3 (glass or ceramic) lasers, ytterbium-doped glass lasers (rod, plate / chip and fiber), holmium YAG (Ho:YAG) lasers, chromium zinc selenide (Cr:ZnSe) lasers, cerium-doped lithium strontium (or calcium) aluminum fluoride (Ce:LiSAF, Ce:LiCAF), promethium-147 phosphate glass (147Pm+3:glass) solid-state lasers, chromium-doped chrysoberyl (alexandrite) lasers, erbium-doped and erbium-ytterbium co-doped glass lasers, uranium(III)-doped calcium fluoride (U:CaF2) solid-state lasers, samarium(II)-doped calcium fluoride (Sm:CaF 2 ) lasers or F-center lasers.

[0040] Semiconductor lasers may include laser medium types such as: GaN, InGaN, AlGaInP, AlGaAs, InGaAsP, GaInP, InGaAs, InGaAsO, GaInAsSb, lead salts, vertical cavity surface emitting lasers (VCSELs), quantum cascade lasers, hybrid silicon lasers or combinations thereof.

[0041] As Figure 3 shown, suitable for supporting such as regarding Figure 1 and Figure 1 as well as Figure 2A and Figure 2BThe laser manufacturing system 300 of the described embodiments uses a laser capable of providing one - dimensional or two - dimensional directed energy as part of the energy patterning system 310. In some embodiments, one - dimensional patterning can be oriented as linear or curved strips, grating lines, helices, or any other suitable form. Two - dimensional patterning can include discrete or overlapping tiled blocks, or an image with varying laser intensity. Two - dimensional image patterns with non - square boundaries can be used, overlapping or interpenetrating images can be used, and images can be provided by two or more energy patterning systems. The energy patterning system 310 uses a laser source and amplifier 312 to direct one or more continuous or intermittent energy beams towards beam - shaping optics 314. After shaping, if desired, the beam is patterned by the energy patterning unit 316, and typically some energy is directed to the rejected energy processing unit 318. The patterned energy is relayed by the image repeater 320 to the article processing unit 340, and in one embodiment, as a two - dimensional image 322 focused at the part 346. The patterned energy directed by the image repeater 320 can melt, fuse, sinter, amalgamate, change the crystal structure, affect the stress pattern, or otherwise chemically or physically alter the part 346 to form a structure with desired properties. The control processor 350 can be connected to various sensors, actuators, heating or cooling systems, monitors, and controllers to coordinate the operation of the laser source and amplifier 312, the beam - shaping optics 314, the laser patterning unit 316, the image repeater 320, and any other components of the system 300. As will be understood, the connections can be wired or wireless, continuous or intermittent, and include the ability for feedback (e.g., heating can be adjusted in response to sensed temperature).

[0042] In some embodiments, the beam - shaping optics 314 can include a variety of imaging optics to combine, focus, diverge, reflect, refract, homogenize one or more laser beams received from the laser source and amplifier 312, adjust the intensity of one or more laser beams received from the laser source and amplifier 312, adjust the frequency of one or more laser beams received from the laser source and amplifier 312, or otherwise shape and direct one or more laser beams received from the laser source and amplifier 312 towards the laser patterning unit 316. In one embodiment, wavelength - selective mirrors (e.g., dichroic mirrors) or diffraction elements can be used to combine multiple beams, each beam having a different optical wavelength. In other embodiments, multifaceted mirrors, microlenses, and refractive or diffractive optical elements can be used to homogenize or combine multiple beams.

[0043] The laser patterning unit 316 can include static or dynamic energy patterning elements. For example, a laser beam can be blocked by a mask having fixed or movable elements. To increase the flexibility and simplicity of image patterning, pixel-addressable masking, image generation, or transmission can be used. In some embodiments, the laser patterning unit includes an addressable light valve that, alone or in combination with other patterning mechanisms, provides patterning. The light valve can be transmissive, reflective, or use a combination of transmissive and reflective elements. Electrical addressing or optical addressing can be used to dynamically change the pattern. In one embodiment, a transmissive optically addressed light valve is used to rotate the polarization of light passing through the valve, where the optically addressed pixels form a pattern defined by a light projection source. In another embodiment, a reflective optically addressed light valve includes a write beam for changing the polarization of a read beam. In certain embodiments, non-optically addressed light valves can be used. These can include, but are not limited to, electrically addressable pixel elements, movable mirrors or micromirror systems, piezoelectric or microactuated optical systems, fixed or movable masks or shields, or any other conventional system capable of providing high-intensity light patterning.

[0044] The rejected energy handling unit 318 is used to disperse, redirect, or utilize the energy that is not patterned and passes through the image repeater 320. In one embodiment, the rejected energy handling unit 318 can include passive or active cooling elements that remove heat from both the laser source and amplifier 312 and the laser patterning unit 316. In other embodiments, the rejected energy handling unit can include a "beam collector" to absorb any beam energy not used in defining the laser pattern and convert it to heat. In still other embodiments, beam shaping optics 314 can be used to recover the rejected laser beam energy. Alternatively or additionally, the rejected beam energy can be directed to the article handling unit 340 for heating or further patterning. In certain embodiments, the rejected beam energy can be directed to an additional energy patterning system or article handling unit.

[0045] In one embodiment, a "switch station" type of optical system can be used. The switch station system is adapted to reduce light waste in a laser manufacturing system due to rejection of unwanted light due to the pattern to be printed. The switch station involves the redirection of a complex pattern from where it is generated (in this case, where a spatial pattern is imparted to a plane of a structured or unstructured beam) to where it is delivered through a series of switch points. Each switch point can optionally change the spatial distribution of the incident beam. The switch station optical system can be used in, for example but not limited to, laser-based manufacturing techniques where a mask is applied to light. Advantageously, in various embodiments according to the present disclosure, the discarded energy can be recovered in a homogenized form or as patterned light for maintaining high power efficiency or high productivity. Additionally, the discarded energy can be recovered and reused to increase the strength of more difficult materials to print.

[0046] The image repeater 320 can receive the patterned image (one-dimensional or two-dimensional) from the laser patterning unit 316 directly or through a switch station and direct it to the article handling unit 340. In a manner similar to the beam shaping optics 314, the image repeater 320 can include optics for combining, focusing, diverging, reflecting, refracting the patterned light, adjusting the intensity of the patterned light, adjusting the frequency of the patterned light, or otherwise shaping and guiding the patterned light. Movable mirrors, prisms, diffractive optical elements, or solid-state optical systems that do not require substantial physical movement can be used to guide the patterned light. One of the plurality of lens assemblies can be configured to provide incident light with a magnification ratio, where the lens assembly has both a first set of optical lenses and a second set of optical lenses, and the second set of optical lenses can be exchanged from the lens assembly. The rotation of one or more sets of mirrors mounted on a compensation gantry and a final mirror mounted on a build platform gantry can be used to direct the incident light from a precursor mirror to a desired location. The translational movement of the compensation gantry and the build platform gantry can also ensure that the distance between the incident light from the precursor mirror and the article handling unit 340 is substantially equal to the image distance. In effect, this enables the beam delivery size and intensity for different materials to vary rapidly over the location of the build area while ensuring high availability of the system.

[0047] In addition to the material handling components, the article handling unit 340 can include components for holding and supporting the 3D structure, mechanisms for heating or cooling the chamber, auxiliary optics or support optics, and sensors and control mechanisms for monitoring or adjusting the material or environmental conditions. The article handling unit 340 can support a vacuum or inert gas atmosphere in whole or in part to reduce unwanted chemical interactions and mitigate the risk of fire or explosion (especially for reactive metals). In some embodiments, various pure other atmospheres or mixtures of other atmospheres can be used, including those containing: Ar, He, Ne, Kr, Xe, CO 2 , N 2 , O 2 , SF 6 , CH 4 , CO, N 2 O, C 2 H 2 , C 2 H 4 , C 2 H 6 , C 3 H 6 , C 3 H 8 , i-C 4 H 10 , C 4 H 10, 1-C 4 H 8 , cic-2, C 4 H 7 , 1,3-C 4 H 6 , 1,2-C 4 H 6 , C 5 H 12 , n-C 5 H 12 , i-C 5 H 12 , n-C 6 H 14 , C 2 H 3 Cl, C 7 H 16 , C 8 H 18 , C 10 H 22 , C 11 H 24 , C 12 H 26 , C 13 H 28 , C 14 H 30 , C 15 H 32 , C 16 H 34 , C 6 H 6 , C 6 H 5 -CH 3 , C 8 H 10 , C 2 H 5 OH, CH 3 OH, iC 4 H 8 . In some embodiments, a refrigerant or large inert molecules (including but not limited to sulfur hexafluoride) can be used. In some embodiments, a pure or diluted atomic or molecular precursor atmosphere can be included to incorporate it into the material being processed by the beam. An enclosure atmospheric composition with at least about 1% He by volume (or number density) and a selected percentage of inert / non-reactive gas can be used.

[0048] The control processor 350 can be connected to control any component of the laser manufacturing system 300 described herein, including lasers, laser amplifiers, optics, thermal controls, build chambers, and manipulator devices. The control processor 350 can be connected to a variety of sensors, actuators, heating or cooling systems, monitors, and controllers to coordinate operations. A wide range of sensors, including imagers, light intensity monitors, thermal sensors, pressure sensors, or gas sensors, can be used to provide information used in control or monitoring. The control processor can be a single central controller or, alternatively, can include one or more independent control systems. The controller processor 350 is provided with an interface that allows the input of manufacturing instructions. The use of a wide range of sensors allows for various feedback control mechanisms to improve quality, manufacturing throughput, and energy efficiency.

[0049] Figure 4 An embodiment of the operation of a manufacturing system suitable for material processing or subtractive manufacturing is shown. In this embodiment, the flowchart 400 illustrates an embodiment of a manufacturing process supported by the described optical and mechanical components. In step 402, a tool, workpiece, or material to be processed is positioned in a cartridge, bed, chamber, or other suitable support. In some embodiments, a manipulator device can be used, such as a crane, lift gantry, robotic arm, or similar device, which allows the manipulation of parts that may be difficult or impossible for a human to move. The manipulator device can grip various permanent or temporary manipulation points on the part to enable the repositioning or manipulation of the part. In some embodiments, the material can be a metal part or other material that can benefit from laser peening, ablation, or cutting using subtractive manufacturing techniques. Laser processing can be used to induce changes in the crystal structure, affect stress patterns, or otherwise be chemically or physically altered to form a structure with desired properties.

[0050] In step 404, unpatterned laser energy is emitted by one or more energy emitters, including but not limited to solid-state or semiconductor lasers, and then amplified by one or more laser amplifiers. In step 406, the unpatterned laser energy is shaped and modified (e.g., intensity modulation or focusing). In step 408, the unpatterned laser energy is patterned, and in step 410, the energy of the unpatterned portion is disposed of (which can include conversion to waste heat, recycling as patterned or unpatterned energy, or cooling the waste heat generated by the laser amplifier in step 404). In step 412, the patterned energy, which now forms a one- or two-dimensional image, is relayed towards the material. In step 414, the image is applied to the material. These steps (loop 418) can be repeated until the image (or different subsequent images) has been applied to all the necessary areas of the material.

[0051] Figure 5is an embodiment of a laser manufacturing system that includes a phase change light valve and a switching station system that enables the reuse of patterned two-dimensional energy. The laser manufacturing system 520 has an energy patterning system that has a laser and amplifier source 512 that directs one or more continuous or intermittent laser beams toward beam shaping optics 514. Excess heat can be transferred to a rejected energy processing unit 522 that can include an active light valve cooling system. After shaping, the beam is two-dimensionally patterned by an energy patterning unit 530, where generally some energy is directed to the rejected energy processing unit 522. The patterned energy is relayed by one of a plurality of image relays 532 toward one or more article processing units 534A, 534B, 534C, or 534D, typically as a two-dimensional image focused on a part, structure, or material. The patterned laser beam directed by the image relay 532 can melt, fuse, sinter, combine, alter the crystal structure, affect the stress pattern, or otherwise chemically or physically alter the material to form a structure with desired properties. Similar to Figure 3 the embodiment of, a control processor 550 can be connected to various sensors, actuators, heating or cooling systems, monitors, and controllers to coordinate the operation of the various components of the laser manufacturing system 520.

[0052] In this embodiment, the rejected energy processing unit has multiple components to allow for the reuse of rejected patterned energy. The coolant fluid from the laser amplifier and source 512 can be directed to one or more of a generator 524, a heating / cooling thermal management system 525, or an energy dump field 526. Additionally, relays 528A, 528B, and 528C can transfer energy to the generator 524, the heating / cooling thermal management system 525, or the energy dump field 526, respectively. Optionally, relay 528C can direct the patterned energy into the image relay 532 for further processing. In other embodiments, the patterned energy can be directed by relay 528C to relays 528B and 528A for insertion into the laser beam provided by the laser and amplifier source 512. The image relay 532 can also be used to reuse the patterned image. The image can be redirected, inverted, mirrored, sub-patterned, or otherwise transformed for distribution to one or more article processing units 534A - 534D. Advantageously, the reuse of patterned light can improve the energy efficiency of the laser manufacturing process and, in some cases, increase the energy intensity directed at the bed or reduce the manufacturing time.

[0053] Those skilled in the art, benefiting from the teachings given in the foregoing description and the related drawings, will conceive of many modifications and other embodiments of the present invention. Accordingly, it is to be understood that the present invention is not limited to the specific embodiments disclosed, and that modifications and embodiments are intended to be included within the scope of the appended claims. It is also to be understood that other embodiments of the present invention may be practiced without the elements / steps not specifically disclosed herein.

Claims

1. A laser manufacturing system, comprising: a laser patterning unit having a light - addressed light valve; an image relay that can direct a patterned laser beam from the laser patterning unit onto a part; wherein the patterned laser beam can ablatively remove material from the part.

2. The laser manufacturing system according to claim 1, wherein, the part has multiple material layers, and a selected layer is removable.

3. The laser manufacturing system according to claim 1, wherein, the patterned laser beam can further induce a selected chemical reaction in the part material.

4. The laser manufacturing system according to claim 1, wherein, the patterned laser beam can further perform laser peening on the part material.

5. The laser manufacturing system according to claim 1, wherein, the laser patterning unit provides one - dimensional patterning.

6. The laser manufacturing system according to claim 1, wherein, the laser patterning unit provides two - dimensional patterning.

7. A laser manufacturing system, comprising: a laser patterning unit having a light - addressed light valve; an image relay that can direct a patterned laser beam from the laser patterning unit onto a part; wherein the patterned laser beam can induce a selected chemical reaction or transformation in the part material.

8. The laser manufacturing system according to claim 7, wherein, the patterned laser beam can further ablatively remove material from the part.

9. The laser manufacturing system according to claim 7, wherein, the part has multiple material layers, and a selected layer is removable.

10. The laser manufacturing system according to claim 7, wherein, the patterned laser beam can further perform laser peening on the part material.

11. The laser manufacturing system according to claim 7, wherein, the laser patterning unit provides one - dimensional patterning.

12. The laser manufacturing system according to claim 7, wherein, the laser patterning unit provides two - dimensional patterning.

13. A laser manufacturing method, comprising: providing a laser patterning unit having a light - addressed light valve; using an image relay to direct a patterned laser beam from the laser patterning unit onto a part; and wherein the patterned laser beam is used for at least one of the following: 1) inducing a selected chemical reaction and 2) ablatively removing material from the part using the patterned laser beam.

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