Heating disc and semiconductor device processing equipment

Abstract

The invention provides a heating disc and processing equipment of a semiconductor device. A plate body of the heating plate is divided into a plurality of heating areas. The plurality of heating areas have a plurality of different heights so as to carry out differentiated partition heating on a plurality of corresponding areas of a wafer carried by the heating disc, and are used for carrying out temperature distribution adjustment on the disc surface, so that the efficiency of adjusting the surface temperature of the heating disc is remarkably improved, and the manufacturing cost is greatly reduced.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor manufacturing, and in particular to a heating plate and a processing device for semiconductor devices. Background Art

[0002] The surface temperature distribution of the heating plate has a crucial impact on the thin film deposition process. As a key component for carrying and heating the wafer, the surface temperature distribution of the heating plate directly determines the heating conditions of each area of ​​the wafer, which in turn affects the quality and uniformity of thin film deposition. In actual processes, different processes have different requirements for wafer temperature distribution. For example, some processes require that the temperature of area 1 is higher than that of area 2, and area 2 is higher than that of area 3. For example, other processes require that the temperatures of each area are as close as possible.

[0003] In the prior art, the uniformity of the surface temperature of the heating disk is mainly achieved by adjusting the distribution and power of the heating wire. Specifically, the manufacturing process of the heating disk is usually divided into the following steps: first, the upper and lower parts of the disk are prepared separately, then the heating wire is placed between the two, and finally the disk surface and the heating wire are combined into a whole through a high temperature and high pressure sintering process. However, this method has significant limitations: on the one hand, the sintering process is time-consuming, and once completed, no adjustments can be made to the heating wire. Even minor changes require the entire manufacturing process to be restarted, resulting in a significant increase in time and cost; on the other hand, the temperature distribution of the heating disk is not only affected by the heating wire, but also closely related to the heat dissipation properties of the disk material, the thermal conductivity of the disk material, the disk surface structure design, etc. Therefore, the method of relying solely on the heating wire to adjust the temperature not only makes the heating wire structure complex and costly, but also makes it difficult to achieve high-precision temperature control.

[0004] In order to overcome the above-mentioned defects of the prior art, there is an urgent need in the art for a heating disk technology for adjusting the temperature distribution of the disk surface, thereby significantly improving the efficiency of regulating the surface temperature of the heating disk and substantially reducing the manufacturing cost. Summary of the invention

[0005] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0006] In order to overcome the above-mentioned defects of the prior art, the present invention provides a heating disk technology and a semiconductor device processing equipment for adjusting the temperature distribution of the disk surface, thereby significantly improving the efficiency of regulating the surface temperature of the heating disk and greatly reducing the manufacturing cost.

[0007] Specifically, the heating plate provided according to the first aspect of the present invention has a plate body divided into a plurality of heating areas, wherein the plurality of heating areas have a plurality of different heights, so as to perform differentiated zone heating on a plurality of corresponding areas of a wafer carried by the heating plate.

[0008] Furthermore, in some embodiments of the present invention, a plurality of support columns are provided on the surface of the tray facing the wafer, wherein the plurality of support columns have different lengths, and the sum of the length of each support column and the height of the corresponding heating area is equal, so as to simultaneously support the back side of the wafer through the top of each support column.

[0009] Furthermore, in some embodiments of the present invention, an annular support platform is also provided at the edge of the disk body, wherein the height of the support platform is equal to the sum of the height of each heating area and the length of its corresponding support column, so as to cooperate with the multiple support columns to support the edge of the back side of the wafer.

[0010] Furthermore, in some embodiments of the present invention, an annular support platform is provided on the edge of the disk, wherein the height of the support platform is greater than the height of each of the heating areas so as to support the edge of the back side of the wafer.

[0011] Furthermore, in some embodiments of the present invention, the multiple heating areas are distributed along the radial direction of the disk, wherein the height of each heating area decreases from inside to outside, so as to provide a heating field that decreases from inside to outside to the wafer.

[0012] Furthermore, in some embodiments of the present invention, the disk is divided into two or three heating zones along its radial direction, wherein the number and / or boundary positions of the heating zones are determined according to process requirements of the wafer.

[0013] Furthermore, in some embodiments of the present invention, the disk body is divided into three heating zones along its radial direction, wherein the first zone located at the center of the disk body has a diameter of 180nm and has a first height, the second zone located at the periphery of the first zone has an outer diameter of 230nm, and its second height is 20μm smaller than the first height, and the third zone located at the periphery of the second zone has an outer diameter of 290nm, and its third height is 20μm smaller than the second height.

[0014] Furthermore, in some embodiments of the present invention, the disk body consists of a lower half and an upper half, wherein the lower half has a flat upper surface, the heating wire is laid on the upper surface of the lower half, and the upper half has different thicknesses corresponding to the positions of each heating area, so that the multiple heating areas have different heights.

[0015] Furthermore, in some embodiments of the present invention, a cooling airflow flows between the multiple heating areas and the back side of the wafer to differentially remove the heat emitted by each of the heating areas, wherein the cooling airflow removes less heat from the first heating area with a larger height than the heat it removes from the second heating area with a smaller height.

[0016] Furthermore, a semiconductor device processing device provided according to a second aspect of the present invention comprises a heating plate as described in any one of the first aspect of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0018] Figure 1 A schematic diagram of a heating plate structure provided according to some embodiments of the present invention is shown.

[0019] Figure 2A to Figure 2C A schematic diagram of partitions of a heating plate provided according to some embodiments of the present invention is shown.

[0020] Figure 3 A side schematic diagram of a heating plate structure provided according to some embodiments of the present invention is shown.

[0021] Figure 4 A schematic structural diagram of a heating plate support platform provided according to some embodiments of the present invention is shown.

[0022] Figure 5 A schematic diagram showing simulation results of temperature distribution of a heating plate provided according to some embodiments of the present invention is shown.

[0023] Reference numerals:

[0024] Wafer 10

[0025] Support column 20

[0026] Support table 30

[0027] First Area 40

[0028] Second area 50

[0029] Third area 60

[0030] Plate 70 DETAILED DESCRIPTION

[0031] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0032] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0033] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0034] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0035] As mentioned above, the surface temperature distribution of the heating plate has a crucial impact on the thin film deposition process. As a key component for carrying and heating the wafer, the surface temperature distribution of the heating plate directly determines the heating conditions of each area of ​​the wafer, which in turn affects the quality and uniformity of thin film deposition. In actual processes, different processes have different requirements for wafer temperature distribution. For example, some processes require that the temperature of area 1 is higher than that of area 2, and area 2 is higher than area 3. For example, other processes require that the temperatures of each area be as close as possible.

[0036] In the prior art, the uniformity of the surface temperature of the heating disk is mainly achieved by adjusting the distribution and power of the heating wire. Specifically, the manufacturing process of the heating disk is usually divided into the following steps: first, the upper and lower parts of the disk are prepared separately, then the heating wire is placed between the two, and finally the disk surface and the heating wire are combined into a whole through a high temperature and high pressure sintering process. However, this method has significant limitations: on the one hand, the sintering process is time-consuming, and once completed, no adjustments can be made to the heating wire. Even minor changes require the entire manufacturing process to be restarted, resulting in a significant increase in time and cost; on the other hand, the temperature distribution of the heating disk is not only affected by the heating wire, but also closely related to the heat dissipation properties of the disk material, the thermal conductivity of the disk material, the disk surface structure design, etc. Therefore, the method of relying solely on the heating wire to adjust the temperature not only makes the heating wire structure complex and costly, but also makes it difficult to achieve high-precision temperature control.

[0037] In order to overcome the above-mentioned defects of the prior art, there is an urgent need in the art for a heating disk technology for adjusting the temperature distribution of the disk surface, thereby significantly improving the efficiency of regulating the surface temperature of the heating disk and substantially reducing the manufacturing cost.

[0038] In some non-limiting embodiments, the heating plate provided in the first aspect of the present invention may be configured in the semiconductor device processing equipment provided in the second aspect of the present invention.

[0039] Please refer to Figure 1 and Figure 2A to Figure 2C , Figure 1 A schematic diagram of a heating plate structure provided according to some embodiments of the present invention is shown. Figure 2A to Figure 2C A schematic diagram of partitions of a heating plate provided according to some embodiments of the present invention is shown.

[0040] like Figure 1 and Figure 2A to Figure 2C As shown, the heating plate body 70 is divided into a plurality of heating zones. The plurality of heating zones have a plurality of different heights so as to perform differentiated zone heating on a plurality of corresponding zones of the wafer 10 carried by the heating plate.

[0041] Please refer to Figure 3-4 , Figure 3 A side schematic diagram of a heating plate structure provided according to some embodiments of the present invention is shown. Figure 4 A schematic structural diagram of a heating plate support platform 30 provided according to some embodiments of the present invention is shown.

[0042] like Figure 3As shown, a plurality of support pillars 20 are provided on the surface of the disk body 70 facing the wafer 10. The plurality of support pillars 20 involve a variety of different lengths, and the sum of the length of each support pillar 20 is equal to the height of the corresponding heating area, so as to simultaneously support the back side of the wafer 10 through the top of each support pillar 20. This design of a gradient in the disk height makes the space between the heating disk and the wafer 10 different. In the third area 60 where the disk height is smaller, the corresponding support pillars 20 will be higher, and heat will be more easily dissipated, and the third area 60 has a larger space and will be exposed to more flowing gas, thereby taking away more heat from the heating disk. In other words, in areas where the disk height is smaller, the temperature of the wafer 10 will eventually be lower; accordingly, in areas where the disk height is larger, the temperature of the wafer 10 will eventually be higher.

[0043] like Figure 4 As shown, the edge of the plate body 70 may also be provided with an annular support platform 30. The height of the support platform 30 is equal to the sum of the height of each heating area and the length of the corresponding support column 20, so as to cooperate with multiple support columns 20 to support the edge of the back side of the wafer 10. Here, the support platform 30 is used to support the wafer 10, and at the same time, gas can flow between the wafer 10 and the surface of the heating plate, so that the temperature of the wafer 10 is more uniform through heat convection.

[0044] In some embodiments, for a heating plate with a small surface roughness (i.e., a smooth surface), the support table 30 can also play a sealing role after the wafer 10 is placed on the heating plate, thereby preventing a large amount of gas from entering from the edge of the wafer 10 to the back of the wafer 10 and blowing it off.

[0045] In some embodiments, in order to make the wafer 10 carried by the wafer 10 reach a horizontal state, the height of the support pillars 20 in each area is also different, but the total height of each area is level with the support platform 30.

[0046] Accordingly, the surface of the tray 70 facing the wafer 10 may not be provided with a plurality of support pillars 20. An annular support platform 30 is provided at the edge of the tray 70. The height of the support platform 30 is greater than the height of each heating area to support the edge of the back side of the wafer 10.

[0047] In some embodiments, a plurality of heating regions are distributed along the radial direction of the plate 70. The height of each heating region decreases from the inside to the outside, so as to provide a heating field decreasing from the inside to the outside to the wafer 10.

[0048] Furthermore, the disk 70 is divided into two or three heating zones along its radial direction. The number and / or boundary positions of the heating zones are determined according to the process requirements of the wafer 10 .

[0049] Further, the disc body 70 is divided into three heating areas along its radial direction. The first area 40 located at the center of the disc body 70 has a diameter of 180 nm and a first height, the second area 50 located at the periphery of the first area 40 has an outer diameter of 230 nm, and its second height is 20 μm smaller than the first height, and the third area 60 located at the periphery of the second area 50 has an outer diameter of 290 nm, and its third height is 20 μm smaller than the second height.

[0050] Specifically, the support pillars 20 in the first region 40 may be 10 μm high, the support pillars 20 in the second region 50 may be 30 μm high, the support pillars 20 in the third region 60 may be 50 μm high, and the support platform 30 may be 10 μm higher than the first region 40 .

[0051] Optionally, the disk body 70 can also be divided into two along the diameter to form a first semicircle and a second semicircle. Here, the height of the first semicircle is greater than that of the second semicircle to form a heating field corresponding to the heating demand.

[0052] In some embodiments, the disc body 70 is composed of a lower half and an upper half. The lower half has a flat upper surface, and the heating wire is laid on the upper surface of the lower half. The upper half has different thicknesses at positions corresponding to the heating areas, so that the multiple heating areas have different heights. Here, the manufacturing process of the disc body 70 includes but is not limited to sintering, welding, and detachable clamping.

[0053] In some embodiments, cooling air flows between the plurality of heating regions and the back side of the wafer 10 to differentially remove heat from each heating region. The cooling air removes less heat from the first heating region with a larger height than from the second heating region with a smaller height.

[0054] In addition, those skilled in the art conducted simulation experiments on the heating disk according to the structure and principle of the embodiment of the present application to obtain the overall temperature of the wafer 10.

[0055] Specifically, first, the disk height of the first area 40 is set to be the highest, and the disk height step gradually decreases from the center to the edge of the heating disk. Secondly, the ambient temperature is set to 600° C., the argon gas flow rate is 8000 sccm, and the pressure is 4 Torr.

[0056] Those skilled in the art can understand that the setting of these parameters and structures is only for the test environment required by some process. For different process, the high simulation conditions of temperature and gas flow are different. Here, only the test environment requirements of some process are selected, rather than for limiting the entire structure of the heating plate and its corresponding process parameters.

[0057] Please refer to Figure 5 , Figure 5A schematic diagram showing simulation results of temperature distribution of a heating plate provided according to some embodiments of the present invention is shown.

[0058] like Figure 5 As shown, according to the structure of the heating plate, when the height is different, the temperature in the area at different heights is different.

[0059] Specifically, the height of the plate gradually decreases from the center to the edge of the heating plate, and the surface temperature of the heating plate gradually decreases from the center to the edge. It can be seen that the temperature of each area can be affected by setting the height gradient of the plate.

[0060] In summary, the heating disk and semiconductor device processing equipment provided by the present invention can adjust the temperature distribution of the disk surface, thereby significantly improving the efficiency of regulating the surface temperature of the heating disk and greatly reducing the manufacturing cost.

[0061] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0062] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A heating plate, the plate body of which is divided into a plurality of heating areas, characterized in that: The plurality of heating areas have a plurality of different heights so as to perform differentiated zone heating on a plurality of corresponding areas of the wafer carried by the heating plate.

2. The heating plate according to claim 1, characterized in that The surface of the disk body facing the wafer is provided with a plurality of support pillars, wherein the plurality of support pillars have different lengths, and the sum of the length of each support pillar is equal to the height of the corresponding heating area, so as to simultaneously support the back side of the wafer through the top of each support pillar.

3. The heating plate according to claim 2, characterized in that An annular support platform is also provided on the edge of the disk, wherein the height of the support platform is equal to the sum of the height of each heating area and the length of the corresponding support column, so as to cooperate with the multiple support columns to support the edge of the back side of the wafer.

4. The heating plate according to claim 1, characterized in that An annular support platform is provided at the edge of the disk, wherein the height of the support platform is greater than the height of each heating area so as to support the edge of the back side of the wafer.

5. The heating plate according to claim 1, characterized in that The multiple heating areas are distributed along the radial direction of the disk, wherein the height of each heating area decreases from the inside to the outside, so as to provide a heating field that decreases from the inside to the outside to the wafer.

6. The heating plate according to claim 5, characterized in that The disk is divided into two or three heating zones along its radial direction, wherein the number and / or boundary positions of the heating zones are determined according to process requirements of the wafer.

7. The heating plate according to claim 6, characterized in that The disk is divided into three heating areas along its radial direction, wherein: The first region located at the center of the disk has a diameter of 180 nm and a first height, The outer diameter of the second region located outside the first region is 230 nm, and the second height thereof is 20 μm smaller than the first height. The outer diameter of the third region located at the periphery of the second region is 290 nm, and the third height thereof is 20 μm smaller than the second height.

8. The heating plate according to claim 1, characterized in that The disk body consists of a lower half and an upper half, wherein the lower half has a flat upper surface, the heating wire is laid on the upper surface of the lower half, and the upper half has different thicknesses corresponding to the positions of the heating areas so that the multiple heating areas have different heights.

9. The heating plate according to claim 1, characterized in that: A cooling airflow flows between the multiple heating areas and the back side of the wafer to differentially remove the heat generated by each heating area, wherein the cooling airflow removes less heat from the first heating area with a larger height than the heat removed from the second heating area with a smaller height.

10. A semiconductor device processing equipment, characterized in that: The heating plate comprises the heating plate as claimed in any one of claims 1 to 9.

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