OPC result correction method and result verification device thereof

Abstract

According to the OPC result correction method and the result verification device thereof provided by the invention, the NILS value is introduced as an index for measuring correction quality on the basis of the existing OPC correction method, so that the absolute value of the EPE value of the target graph after OPC correction is ensured to meet the requirement of the preset EPE standard value, and the NILS value of the target graph can be improved; according to the method, the target graph after OPC correction has better spatial graph contrast, and better imaging quality is obtained in the actual exposure process, so that the problem of disconnection or bridging caused by size deviation of the target graph is effectively avoided, and further, the image quality is improved. The better spatial pattern contrast can bring better photoresist morphology and a larger photoetching process window, so that the generation of pattern defects is reduced, and the improvement of the yield of products is more facilitated.

Description

Technical Field

[0001] The invention belongs to the field of semiconductor design and manufacturing, and relates to an OPC result correction method and a result verification device thereof. Background Art

[0002] In the field of modern semiconductor manufacturing, with the rapid development of integrated circuit technology, the feature size of semiconductor devices continues to shrink, and the requirements for process accuracy are becoming higher and higher. In this context, Optical Proximity Correction (OPC) technology came into being, and it has become one of the key technologies to ensure the accuracy of semiconductor pattern transfer.

[0003] OPC technology mainly compensates for the optical proximity effect caused by physical phenomena such as light wave diffraction and scattering during the lithography process by accurately correcting the pattern on the mask, thereby improving the fidelity of the lithography pattern. In practical applications, the designed target pattern can be transferred to the semiconductor substrate with high precision by exposing and imaging the mask after OPC correction on the lithography equipment, ensuring that the shape and size of the target pattern meet the design requirements.

[0004] However, in the process of OPC correction, the evaluation criteria and methods of correction quality are crucial. At present, edge placement error (EPE) is the main indicator to measure the effect of OPC correction. EPE represents the deviation between the edge of the simulated photoresist pattern after exposure and the edge of the designed pattern. The smaller the value, the better the correction effect and the closer the exposed pattern is to the designed pattern. However, the existing OPC correction method relies too much on EPE as the only evaluation criterion. Specifically, the existing OPC correction method tends to ignore the spatial image contrast in the actual photolithography imaging process in the process of pursuing EPE minimization. Spatial image contrast is one of the key factors affecting the transfer quality of photolithography patterns, which directly determines the morphology and size of the photolithography patterns on the semiconductor substrate.

[0005] However, in the existing OPC correction method, there is a situation that although the EPE of the pattern after OPC correction meets the requirements, in the actual photolithography imaging process, due to the poor spatial image contrast, the pattern finally formed on the wafer deviates from the preset target value. This size deviation is easy to form process hotspots, that is, pattern defects, in actual production, which seriously affects the yield and reliability of the product.

[0006] Therefore, it is very necessary to improve and optimize the existing OPC correction method to ensure that the EPE meets the requirements while taking into account the improvement of spatial image contrast, thereby ensuring high-precision transfer of lithography patterns and product yield. Summary of the invention

[0007] In view of the shortcomings of the prior art mentioned above, the object of the present invention is to provide an OPC result correction method and a result verification device thereof, so as to solve the problem that in the OPC correction method that only relies on EPE as the evaluation standard, the target graphic after OPC correction has dimensional deviation in the pattern after exposure and development due to the difference in spatial graphic contrast, and the resulting problem of easy formation of graphic defects and affecting product yield.

[0008] To achieve the above object and other related objects, the present invention provides an OPC result correction method, which includes the following steps:

[0009] S1: providing an original layout, performing optical proximity effect (OPC) preprocessing on the original layout, and generating a target pattern;

[0010] S2: Perform OPC correction on the target graphic, and determine whether the absolute value of the edge placement error (EPE) value of the corrected target graphic meets the preset EPE standard value;

[0011] S3: If the absolute value of the EPE value of the modified target graphic meets the preset EPE standard value, the modified target graphic is calculated to obtain a normalized image logarithmic slope (NILS) value, and it is determined whether the NILS value of the modified target graphic meets the preset NILS standard value;

[0012] S4: if the NILS value of the target pattern after correction meets the preset NILS standard value, output the target mask; if the NILS value of the target pattern after correction does not meet the preset NILS standard value, determine whether the maximum number of corrections of the target pattern reaches a preset threshold;

[0013] S5: If the maximum number of corrections of the target graphic reaches a preset threshold, the target mask is output; if the maximum number of corrections of the target graphic does not reach the preset threshold, the target graphic is expanded and steps S2 to S4 are repeated until the NILS value of the target graphic meets the preset NILS standard value or the maximum number of corrections of the target graphic reaches the preset threshold.

[0014] Optionally, if the absolute value of the EPE value of the corrected target graphic does not meet the preset EPE standard value, multiple OPC corrections are performed on the corrected target graphic until the absolute value of the EPE value of the corrected target graphic meets the preset EPE standard value.

[0015] Optionally, the step of performing OPC correction on the target graphic includes: exposing the target graphic and performing photolithography simulation on the target graphic to obtain a first simulation graphic, comparing an edge of the first simulation graphic with an edge of a preset graphic to obtain an EPE value of the target graphic, and when the absolute value of the EPE value of the target graphic is greater than the preset EPE standard value, adjusting the target graphic and performing photolithography simulation and comparison again until the absolute value of the EPE value of the target graphic is less than or equal to the preset EPE standard value.

[0016] Optionally, the preset EPE standard value ranges from 0 to 3 nm.

[0017] Optionally, the preset threshold of the maximum number of corrections of the target graphic is 10 to 25 times.

[0018] Optionally, the calculation formula of the normalized image logarithmic slope is: Where: w represents the width of the light-transmitting area on the target mask, Indicates the spatial pattern contrast at the edge of the target pattern.

[0019] Optionally, the preset NILS standard value ranges from 1.3 to 1.6.

[0020] Optionally, expanding the target graphic includes: expanding outwardly by a preset distance along a circumference at an edge of the target graphic to improve spatial graphic contrast.

[0021] Optionally, the layout in the target mask is used to form a through hole.

[0022] The present invention also provides an OPC result verification device, the OPC result verification device at least comprising:

[0023] A graphics acquisition module is used to acquire a target graphics after preprocessing the original layout and performing OPC correction;

[0024] A first judgment module, the first judgment module is used to judge whether the absolute value of the EPE value of the target graphic after correction meets the preset EPE standard value;

[0025] A detection module, used to detect the width of the light-transmitting area on the modified target pattern and the spatial pattern contrast at the edge of the modified target pattern, and obtain the NILS value of the modified target pattern after calculation;

[0026] A second judgment module, the second judgment module is used to judge whether the NILS value of the corrected target graphic meets the preset NILS standard value;

[0027] A third judgment module, the third judgment module is used to determine whether the maximum number of corrections of the target graphic reaches a preset threshold;

[0028] The OPC verification module outputs the target mask when the maximum number of corrections of the target graphic does not reach a preset threshold and the NILS value of the corrected target graphic meets the preset NILS standard value; corrects the target graphic again when the maximum number of corrections of the target graphic reaches the preset threshold and the NILS value of the corrected target graphic meets the preset NILS standard value; outputs the target mask when the maximum number of corrections of the target graphic reaches the preset threshold and the NILS value of the corrected target graphic meets the preset NILS standard value; determines that the OPC result is unqualified.

[0029] As described above, the OPC result correction method and result verification device of the present invention, on the basis of the existing OPC correction method, introduce the NILS value as an indicator to measure the correction quality, thereby ensuring that the absolute value of the EPE value of the target graphic after OPC correction can meet the preset EPE standard value requirements while also improving the NILS value of the target graphic, so that the target graphic after OPC correction has better spatial graphic contrast, and obtains better imaging quality during the actual exposure process, thereby effectively avoiding the problem of disconnection or bridging caused by the deviation of the target graphic size. Furthermore, better spatial graphic contrast can bring better photoresist morphology and a larger lithography process window, thereby reducing the generation of process hotspots such as graphic defects, and is more conducive to improving the product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 A flowchart of a conventional OPC correction method is shown.

[0031] Figure 2 Shown is a process flow chart of the OPC result correction method in an embodiment of the present invention.

[0032] Figure 3 Shown is a schematic structural diagram of an OPC result verification device in an embodiment of the present invention.

[0033] Description of Figure Numbers

[0034] 11. Graphics acquisition module; 12. First judgment module; 13. Detection module; 14. Second judgment module; 15. Third judgment module; 16. OPC verification module; S1~S5: steps. DETAILED DESCRIPTION

[0035] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0036] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0037] For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the schematic diagrams showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0038] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and therefore the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0039] Figure 1 This is a flow chart of an existing OPC correction method. Figure 1 In the existing OPC correction method, only the edge placement error (EPE) value is used as the main indicator to measure the quality of the design graphics after correction. Generally speaking, a small EPE value means that the graphics after exposure are close to the design graphics. The specific method is to use the correction software to continuously move the edge position of the target graphics and calculate the corresponding EPE value until the calculated EPE value reaches an acceptable value. However, the existing OPC correction method does not take into account the different spatial image contrasts of the actual optical imaging during exposure. It is possible that although the EPE value of the design graphics after OPC correction meets the requirements, due to the poor spatial image contrast during actual optical imaging, the graphics formed on the wafer after exposure will eventually deviate from the pre-set design graphics.

[0040] After calculation, it can be seen that the EPE values ​​of the upper and lower ends of the through-hole pattern after correction by the existing OPC correction method are 0.55nm and 0.34nm respectively. Obviously, this EPE value meets the industry's requirements for the EPE value of the corrected pattern, and the expected simulation size is 81nm. However, the NILS value of the pattern obtained by simulation calculation is too small, resulting in the actual vertical size of the pattern after exposure and development on the wafer being only 70.3nm, which is 10.7nm smaller than expected. This size deviation is easy to form process hotspots in actual production, and ultimately affects the yield of the product.

[0041] To this end, this embodiment provides an OPC result correction method to compensate for the dimensional deviation between the pattern after exposure and development and the expected pattern caused by the existing OPC correction method that only relies on the EPE value as the only evaluation standard for the quality of the design graphic after correction, thereby achieving better imaging quality during the exposure process, reducing the generation of graphic defects, and improving the yield of the product.

[0042] This embodiment provides an OPC result correction method, such as Figure 2 FIG. 1 is a process flow chart of the OPC result correction method described in this embodiment, and the correction method includes the following steps:

[0043] Step S1: providing an original layout, performing optical proximity effect (OPC) preprocessing on the original layout, and generating a target pattern.

[0044] It should be pointed out that the OPC result correction method proposed in the present application can be applied to the target graphics created in advance after OPC preprocessing, and can also be applied to the OPC results that have been obtained. When applied to the OPC results that have been obtained, the EPE value of the target graphics of the OPC results that have been obtained should first be determined whether it meets the preset EPE standard value.

[0045] When applied to a target graphic after OPC preprocessing created in advance, the original layout needs to be preprocessed first. Specifically, the original layout mentioned in this embodiment can be an original layout containing multiple through-hole structures, and the process of optical proximity effect (OPC) preprocessing of the original layout can include: 1. Graphic segmentation: decomposing the original layout of multiple through-hole structures into multiple key areas, such as dense line areas, isolated through-hole areas, etc.; 2. By adjusting the edge position of the original layout and compensating for the optical diffraction effect, a preliminary target graphic is generated, and the target graphic at least includes the main through-hole and can also include auxiliary features around the main through-hole.

[0046] Step S2: performing OPC correction on the target pattern, and determining whether the absolute value of the edge placement error (EPE) value of the corrected target pattern meets the preset EPE standard value.

[0047] Specifically, in this embodiment, after obtaining the target graphic after OPC preprocessing, the target graphic is also subjected to OPC correction. The step of performing OPC correction on the target graphic includes: exposing the target graphic and performing photolithography simulation on the target graphic using correction software to obtain a first simulation graphic, and then comparing the edge of the first simulation graphic with the edge of the preset graphic to obtain the EPE value of the target graphic. The EPE value mentioned here is generally divided into EPE values ​​at the upper and lower ends. Specifically, the distance difference between the upper end of the first simulation graphic and the upper end of the preset graphic is the EPE value at the upper end, and the distance difference between the lower end of the first simulation graphic and the lower end of the preset graphic is the EPE value at the lower end. Since the EPE value at the upper end may be positive or negative, and the EPE value at the lower end may also be positive or negative, the absolute value of the EPE value is uniformly used here to quantify the EPE value of the target graphic. Specifically, when the absolute value of the EPE value of the target graphic is greater than the preset EPE standard value, the target graphic needs to be adjusted and lithography simulation and comparison need to be performed again until the absolute value of the EPE value of the target graphic is less than or equal to the preset EPE standard value.

[0048] In this embodiment, the range of the preset edge placement error standard value is 0 to 3nm. Specifically, it is generally believed in the industry that when the range of the EPE standard value is 0 to 3nm, it can be judged that the edge of the first simulation figure is well contrasted with the edge of the preset figure. Therefore, the range of the preset EPE standard value is set to 0 to 3nm, for example: the preset EPE standard value is 0.5nm, 1nm, 1.5nm or 3nm, and the smaller the preset EPE standard value, the better the edge of the first simulation figure is compared with the edge of the preset figure. In a specific embodiment, assuming that the preset EPE standard value is 1.5nm, when the absolute value of the EPE value of the target figure is greater than 1.5nm, it is necessary to adjust the target figure and perform lithography simulation again and compare it with the preset figure. Here, the form of adjusting the target figure is to continuously move the edge position of the target figure when the correction software is running until the absolute value of the EPE value of the target figure is less than or equal to 1.5nm.

[0049] Step S3: If the absolute value of the EPE value of the modified target graphic meets the preset EPE standard value, the modified target graphic is calculated to obtain the normalized image logarithmic slope (NILS) value to determine whether the NILS value of the modified target graphic meets the preset NILS standard value.

[0050] Specifically, in this embodiment, if the absolute value of the EPE value of the corrected target graphic does not meet the preset EPE standard value, the corrected target graphic is subjected to multiple OPC corrections until the absolute value of the EPE value of the corrected target graphic meets the preset EPE standard value.

[0051] In this embodiment, when the absolute value of the EPE value of the corrected target graphic meets the preset EPE standard value, the target graphic is further subjected to NILS defect detection, that is, the degree to which the characteristic size of the target graphic is affected by the exposure intensity is detected, thereby obtaining the normalized image logarithmic slope of the target graphic at the edge position, that is, the NILS value.

[0052] Specifically, the calculation of the corrected target pattern to obtain the NILS value of the target pattern at the edge position includes: calculating the spatial pattern contrast at the edge of the target pattern and the width of the light-transmitting area on the target mask during exposure; based on the spatial pattern contrast at the edge of the target pattern and the width of the light-transmitting area on the target mask during exposure, obtaining the NILS value of the target pattern at the edge position. The calculation formula of the NILS value of the target pattern at the edge position is:

[0053]

[0054] Then, based on the above calculation results, the NILS value of the target graphic is judged.

[0055] Step S4: if the NILS value of the target pattern after correction meets the preset NILS standard value, the target mask is output; if the NILS value of the target pattern after correction does not meet the preset NILS standard value, it is determined whether the maximum number of corrections of the target pattern reaches a preset threshold.

[0056] In this embodiment, the range of the preset NILS standard value is 1.3 to 1.6. Specifically, it is generally believed in the industry that when the range of the preset NILS standard value is 1.3 to 1.6, it can be judged that the higher the contrast of the spatial imaging, the better the quality of the future exposure imaging. Therefore, the range of the preset NILS standard value is set to 1.3 to 1.6, for example: the preset NILS standard value is 1.3nm, 1.4nm, 1.5nm or 1.6nm.

[0057] Specifically, in the present embodiment, after the NILS value of the corrected target graphic is calculated, the NILS value of the corrected target graphic is compared with the preset NILS standard value. When the NILS value of the corrected target graphic meets the preset NILS standard value, the target mask is output; when the NILS value of the corrected target graphic does not meet the preset NILS standard value, it is further determined whether the maximum number of corrections of the target graphic reaches a preset threshold.

[0058] Step S5: If the maximum number of corrections of the target pattern reaches a preset threshold, the target mask is output; if the maximum number of corrections of the target pattern does not reach the preset threshold, the target pattern is expanded and steps S2 to S4 are repeated until the NILS value of the target pattern meets the preset NILS standard value or the maximum number of corrections of the target pattern reaches the preset threshold.

[0059] Specifically, it is determined whether the maximum number of corrections of the target graphic reaches a preset threshold. Here, whether the maximum number of corrections reaches the preset threshold refers to the maximum number of corrections that can be performed on the target graphic. Generally, when the number of corrections of the target graphic does not exceed the preset threshold of the maximum number of corrections, it can be determined that the target graphic can continue to be corrected and the image quality of future exposure can be guaranteed; when the number of corrections of the target graphic exceeds the preset threshold of the maximum number of corrections, it can be determined that the target graphic cannot continue to be corrected and the image quality of future exposure cannot be guaranteed.

[0060] In this embodiment, the preset threshold value of the maximum number of corrections of the target graphic is 10 to 25 times. Specifically, according to different target graphics formed, the preset threshold value of the maximum number of corrections of the target graphic may be different, and the preset threshold value of the maximum number of corrections of the target graphic is 10 to 25 times, for example, it can be 10 times, 15 times or 25 times.

[0061] When the maximum number of corrections of the target graphic reaches a preset threshold, the target mask is output, and the target mask at this time cannot be used for exposure to form graphics such as through holes; when the maximum number of corrections of the target graphic does not reach the preset threshold, it indicates that the target graphic can continue to be corrected and the image quality of future exposure formation can be guaranteed. Therefore, the target graphic is expanded and the above-mentioned comparison of the EPE value and the NILS value is repeated until the NILS value of the target graphic meets the preset NILS standard value or the maximum number of corrections of the target graphic reaches the preset threshold. At this time, the target mask is output, and it should be known that when the NILS value of the target graphic meets the preset NILS standard value, the output target mask can be used for exposure to form graphics such as through holes, and when the maximum number of corrections of the target graphic reaches the preset threshold and the NILS value of the target graphic still does not meet the preset NILS standard value, the output target mask cannot be used for exposure to form graphics such as through holes, which means that the OPC result is unqualified.

[0062] In this embodiment, expanding the target pattern includes: expanding outwards by a preset distance along the circumference at the edge of the target pattern to improve the spatial pattern contrast.

[0063] Based on the OPC result correction method described above, this embodiment also provides an OPC result verification device, which can be specifically referred to Figure 3 , Figure 3 The diagram is a schematic diagram of the structure of an OPC result verification device in one embodiment of the present invention, wherein the verification device comprises:

[0064] The graphics acquisition module 11 is used to acquire the target graphics after preprocessing the original layout and performing OPC correction;

[0065] A first judging module 12, the first judging module 12 is used to judge whether the absolute value of the EPE value of the target graphic after correction meets the preset EPE standard value;

[0066] A detection module 13, used to detect the width of the light-transmitting area on the modified target pattern and the spatial pattern contrast at the edge of the modified target pattern, and obtain the NILS value of the modified target pattern after calculation;

[0067] A second judgment module 14, the second judgment module 14 is used to judge whether the NILS value of the target pattern after correction meets the preset NILS standard value;

[0068] A third judgment module 15, the third judgment module 15 is used to determine whether the maximum number of corrections of the target graphic reaches a preset threshold;

[0069] The OPC verification module 16 outputs the target mask when the maximum number of corrections of the target graphic does not reach the preset threshold and the NILS value of the corrected target graphic meets the preset NILS standard value; corrects the target graphic again when the maximum number of corrections of the target graphic reaches the preset threshold and the NILS value of the corrected target graphic meets the preset NILS standard value; outputs the target mask when the maximum number of corrections of the target graphic reaches the preset threshold and the NILS value of the corrected target graphic does not meet the preset NILS standard value; determines that the OPC result is unqualified.

[0070] In summary, the OPC result correction method and result verification device of the present invention introduce NILS value as an indicator to measure the correction quality on the basis of the existing OPC correction method, and ensure that the absolute value of the EPE value of the target graphic after OPC correction can also improve the NILS value of the target graphic while meeting the preset EPE standard value requirements, so that the target graphic after OPC correction has a better spatial graphic contrast, and obtains better imaging quality during the actual exposure process, thereby effectively avoiding the problem of disconnection or bridging caused by the deviation of the target graphic size, and further, the better spatial graphic contrast can bring better photoresist morphology and a larger lithography process window, thereby reducing the generation of graphic defects, and is more conducive to improving the yield of the product. Therefore, the present invention effectively overcomes the various shortcomings in the prior art and has a high industrial utilization value.

[0071] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. An OPC result correction method, characterized in that: The correction method comprises the following steps: S1: providing an original layout, performing optical proximity effect (OPC) preprocessing on the original layout, and generating a target pattern; S2: Perform OPC correction on the target graphic, and determine whether the absolute value of the edge placement error (EPE) value of the corrected target graphic meets the preset EPE standard value; S3: If the absolute value of the EPE value of the modified target graphic meets the preset EPE standard value, the modified target graphic is calculated to obtain a normalized image logarithmic slope (NILS) value, and it is determined whether the NILS value of the modified target graphic meets the preset NILS standard value; S4: if the NILS value of the target pattern after correction meets the preset NILS standard value, output the target mask; if the NILS value of the target pattern after correction does not meet the preset NILS standard value, determine whether the maximum number of corrections of the target pattern reaches a preset threshold; S5: If the maximum number of corrections of the target graphic reaches a preset threshold, the target mask is output; if the maximum number of corrections of the target graphic does not reach the preset threshold, the target graphic is expanded and steps S2 to S4 are repeated until the NILS value of the target graphic meets the preset NILS standard value or the maximum number of corrections of the target graphic reaches the preset threshold.

2. The OPC result correction method according to claim 1, characterized in that: If the absolute value of the EPE value of the corrected target graphic does not meet the preset EPE standard value, multiple OPC corrections are performed on the corrected target graphic until the absolute value of the EPE value of the corrected target graphic meets the preset EPE standard value.

3. The OPC result correction method according to claim 2, characterized in that: The step of performing OPC correction on the target graphic includes: exposing the target graphic and performing photolithography simulation on the target graphic to obtain a first simulation graphic, comparing the edge of the first simulation graphic with the edge of a preset graphic to obtain an EPE value of the target graphic, and when the absolute value of the EPE value of the target graphic is greater than the preset EPE standard value, adjusting the target graphic and performing photolithography simulation and comparison again until the absolute value of the EPE value of the target graphic is less than or equal to the preset EPE standard value.

4. The OPC result correction method according to claim 3, characterized in that: The preset EPE standard value ranges from 0 to 3 nm.

5. The OPC result correction method according to claim 1, characterized in that: The preset threshold value of the maximum number of corrections of the target graphic is 10 to 25 times.

6. The OPC result correction method according to claim 1, characterized in that: The calculation formula of the normalized image logarithmic slope is: Where: w represents the width of the light-transmitting area on the target mask, Indicates the spatial pattern contrast at the edge of the target pattern.

7. The OPC result correction method according to claim 1, characterized in that: The preset NILS standard value ranges from 1.3 to 1.

6.

8. The OPC result correction method according to claim 1, characterized in that: Expanding the target pattern includes: expanding outwardly along the circumference of the edge of the target pattern by a preset distance to improve the spatial pattern contrast.

9. The OPC result correction method according to claim 1, characterized in that: The pattern in the target mask is used to form a through hole.

10. An OPC result verification device, characterized in that: The OPC result verification device at least comprises: A graphics acquisition module is used to acquire a target graphics after preprocessing the original layout and performing OPC correction; A first judgment module, the first judgment module is used to judge whether the absolute value of the EPE value of the target graphic after correction meets the preset EPE standard value; A detection module, used to detect the width of the light-transmitting area on the modified target pattern and the spatial pattern contrast at the edge of the modified target pattern, and obtain the NILS value of the modified target pattern after calculation; A second judgment module, the second judgment module is used to judge whether the NILS value of the corrected target graphic meets the preset NILS standard value; A third judgment module, the third judgment module is used to determine whether the maximum number of corrections of the target graphic reaches a preset threshold; The OPC verification module outputs the target mask when the maximum number of corrections of the target graphic does not reach a preset threshold and the NILS value of the corrected target graphic meets the preset NILS standard value; corrects the target graphic again when the maximum number of corrections of the target graphic reaches the preset threshold and the NILS value of the corrected target graphic meets the preset NILS standard value; outputs the target mask when the maximum number of corrections of the target graphic reaches the preset threshold and the NILS value of the corrected target graphic meets the preset NILS standard value; determines that the OPC result is unqualified.

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