Mask repairing equipment and mask repairing method

Abstract

The invention provides a method comprising: positioning a mask in a processing chamber of a mask repair apparatus; determining, by the first gas analysis device, whether a first anomaly is present during formation of the first vacuum in the column above the process chamber; determining, by the second gas analysis device, whether there is a second abnormality during the formation of the second vacuum within the processing chamber; determining, by a third gas analysis device, whether there is a third abnormality while the process gas flows into the process chamber; determining, through a fourth gas analysis device, whether there is a fourth abnormality in a process of irradiating the electron beam or the ion beam to the photomask with the processing gas in the processing chamber; in response to determining that one of the first, second, third, or fourth anomalies is present: stopping directing the electron beam or ion beam to the mask; and performing a repair related to the present first, second, third, or fourth anomalies.

Description

Technical Field

[0001] The embodiments of the present invention relate to a mask repairing device and a mask repairing method. Background Art

[0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced successive generations of ICs, each with smaller and more complex circuits than the previous one. Over the course of IC evolution, functional density (i.e., the number of interconnected devices per chip area) has generally increased, while geometry size (i.e., the smallest component (or line) that can be created using a manufacturing process) has decreased. This process of downsizing generally provides benefits by increasing production efficiency and reducing associated costs. This downsizing has also increased the complexity of IC processing and manufacturing. Summary of the invention

[0003] An embodiment of the present invention provides a method, comprising: positioning a mask in a processing chamber of a mask repair device; and determining, through a first gas analysis device, whether a first abnormality exists during the formation of a first vacuum in a column above the processing chamber; determining, through a second gas analysis device, whether a second abnormality exists during the formation of a second vacuum in the processing chamber; determining, through a third gas analysis device, whether a third abnormality exists during the flow of processing gas into the processing chamber; determining, through a fourth gas analysis device, whether a fourth abnormality exists during the process of irradiating the mask with an electron beam or an ion beam using the processing gas in the processing chamber; in response to determining that one of the first, second, third or fourth abnormalities exists: stopping guiding the electron beam or the ion beam to the mask; and performing repairs related to the first, second, third or fourth abnormalities that exist.

[0004] An embodiment of the present invention provides a method, comprising: forming a repair mask through a mask repair device including an electron beam source or an ion beam source, wherein the formation comprises: detecting at least one abnormality via a gas analysis device installed in at least one of a column, a processing chamber or a loading chamber of the mask repair device; placing the repair mask in a lithography device; positioning a semiconductor wafer in the lithography device; and patterning a mask layer of the semiconductor wafer based on a pattern of the repair mask.

[0005] An embodiment of the present invention provides a system, comprising: a processing chamber having a mask platform therein; a column above the processing chamber, wherein the column has a beam source; a loading chamber adjacent to the processing chamber; a first pump system connected to the processing chamber; a second pump system connected to the loading chamber; an ion getter pump connected to the column; and at least one of the following: a first gas analysis device installed to a first transmission line of the ion getter pump; a second gas analysis device installed to a first wall of the column; a third gas analysis device installed to a second wall of the processing chamber; a fourth gas analysis device installed to a first exhaust line of the first pump system; a fifth gas analysis device installed to a third wall of the loading chamber; or a sixth gas analysis device installed to a second exhaust line of the second pump system. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The aspects of the present disclosure will be best understood by reading the following detailed description in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the size of various features may be arbitrarily increased or reduced for clarity of discussion.

[0007] Figure 1A is a schematic view of an apparatus for lithography according to various embodiments.

[0008] Figure 1B is a schematic view of an apparatus for electron beam manufacturing according to an embodiment of the present disclosure.

[0009] Figures 2 to 4 is an illustration of an electron beam apparatus with evolved gas detection according to various aspects of the present disclosure.

[0010] Figure 5 and Figure 6 is a flow chart of a method according to various aspects of the present disclosure. DETAILED DESCRIPTION

[0011] The following disclosure provides many different embodiments or examples for implementing the different features of the present invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to be limiting. For example, the following description of forming a first feature on or on a second feature may include an embodiment in which the first feature and the second feature are formed to be in direct contact, and may also include an embodiment in which an additional feature may be formed between the first feature and the second feature so that the first feature and the second feature may not be in direct contact. In addition, the present disclosure may reuse reference numbers and / or letters in various examples. This repetition is for the purpose of brevity and clarity, rather than representing the relationship between the various embodiments and / or configurations discussed.

[0012] Furthermore, for ease of description, spatially relative terms such as "underlying," "below," "lower," "overlying," "upper," or the like may be used herein to describe the relationship of one component or feature illustrated in the figures to another (other) component or feature. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0013] For the convenience of description, terms such as "about", "substantially", "substantially", and the like may be used herein. A person of ordinary skill in the art will be able to understand and deduce the meaning of such terms.

[0014] The present disclosure relates generally to charged particle lithography systems and methods, such as electron beam and ion beam lithography systems and methods. More specifically, the present disclosure relates to apparatus and methods for repairing a mask or mask plate used in a lithography apparatus, such as an extreme ultraviolet (EUV) lithography apparatus.

[0015] In an EUV lithography device, a reflective mask or mask plate can be positioned in a chamber to reflect light based on a pattern present on the mask. This pattern may include a first area of ​​high reflectivity and a second area of ​​low or non-reflectivity. In some cases, the mask may include one or more defects that will cause light reflection errors and produce defects on the material layer patterned based on the reflected light. Examples of defects that may exist on or in the EUV mask include blank defects, phase defects, absorber defects, particle contamination, film defects, and printing defects. Blank defects may be inherent in the multilayer mirror substrate of the mask and may include bumps, pits, or inclusions. Phase defects may be caused by defects in the reflective multilayer structure and may change the phase of the reflected EUV light. Absorber defects are defects in the absorber layer, such as over-etching or under-etching, resulting in incorrect feature size or shape. Particle contamination occurs when particles are deposited on the mask plate during manufacturing, processing, or even lithography. Film defects may occur when a film is used to protect the mask plate, and film defects may include defects in the film itself or defects that may occur between the film and the mask plate. Printing defects are defects that occur during the lithography process but manifest themselves on the mask, such as double exposure or misalignment. Some defects that occur due to over-etching or under-etching, such as absorber defects, can be repaired by electron beam induced deposition (EBID) or by electron beam induced etching (EBIE).

[0016] The EBID or EBIE process can be performed by directing an electron beam (e-beam) or ion beam into a chamber where the mask to be repaired is positioned. This chamber is typically maintained under vacuum to avoid deflection or scattering of the electron beam or ion beam before reaching the mask. The vacuum level in the chamber is monitored to avoid loss of yield during the repair process. The chamber is also cleaned regularly to avoid outgassing caused by contaminants that may be present in the chamber. One way to monitor vacuum and potential outgassing is to perform a "dummy" dry run deposition or etch. Dummy deposition or etch involves subjecting the mask to an e-beam treatment in the absence of any gaseous precursors. During dummy deposition, the cleanliness of the chamber can be monitored, but the identity of any contaminants may be unknown.

[0017] In an embodiment of the present disclosure, the chamber contaminant degassing and vacuum level are monitored to prevent instability of the EBID and / or EBIE processes, including monitoring leaks and / or processing gas impurities. Monitoring is beneficial to reducing mask contamination and the scrapping and / or damage of device components. The gas analysis device can detect the content of the gas exhausted from the mask repair equipment. The gas analysis device can monitor the chamber vacuum state and analyze the content of the contaminated gas (e.g., degassing or processing gas impurities) in the mask repair equipment. The gas analysis device can be connected to a pumping line to monitor the leakage and contaminant status of the mask repair equipment.

[0018] Including a gas analysis device can provide multiple benefits. The gas analysis device can detect the content of process gases and / or process byproducts in the mask repair equipment in real time to improve the stability of the repair process. The gas analysis device can monitor the contaminated gas in the vacuum chamber and analyze the gas source to improve the regular maintenance plan, which can prevent damage to the mask. The gas analysis process can help confirm the source of the contaminated gas and prevent the scrapping of the mask due to contamination. The gas analysis process can monitor the leakage status of the mask repair equipment together with monitoring the vacuum pressure or as an alternative to monitoring the vacuum pressure.

[0019] Figure 1A is a schematic diagram of a lithography exposure system or apparatus 10 according to some embodiments. The lithography exposure system 10 is described in detail to provide a background for understanding a mask repair apparatus including a gas detector useful for detecting contaminants, process gas impurities, leaks, and the like.

[0020] In some embodiments, the lithography exposure system 10 is designed to expose the resist layer through extreme ultraviolet (EUV) radiation of the EUV, and may also be referred to as an EUV system 10. The EUV system 10 may also be referred to as an EUV scanner or a lithography scanner. According to some embodiments, the lithography exposure system 10 includes a light source 120, a reflector 140, a mask stage 16, a projection optical module (or projection optical box (POB)) 180, and a substrate stage 24. Components of the lithography exposure system 10 may be added or omitted, and the present invention should not be limited by the embodiments.

[0021] In certain embodiments, the light source 120 is configured to generate optical radiation 84 having a wavelength ranging between about 1 nm and about 300 nm. In one specific example, the light source 120 generates EUV radiation having a wavelength centered at about or substantially 13.5 nm. Therefore, the light source 120 is also referred to as an EUV radiation source. However, it should be understood that the light source 120 should not be limited to emitting EUV radiation. The light source 120 can be used to perform any high intensity photon emission from an excited target fuel.

[0022] In various embodiments, the reflector 140 includes various refractive optical components, such as a single lens or a lens system with multiple reflectors 100, such as a lens (wave zone plate) or optionally a reflective optical device (for EUV lithography exposure system), such as a single lens or a lens system with multiple reflectors 100. The reflector or a reflector system with multiple reflectors is used to direct light from the light source 120 onto the mask platform 16, in particular, onto the mask 18 fixed to the mask platform 16. In the embodiment in which the light source 120 generates light at an EUV wavelength, a reflective optical component is used. In some embodiments, the reflector 140 includes at least two reflectors, at least three reflectors, or more.

[0023] The mask platform 16 is configured to hold the mask 18. In some embodiments, the mask platform 16 includes an electrostatic chuck (electronic chuck) to hold the mask 18. One reason why the electronic chuck is beneficial is that the gas molecules absorb EUV radiation and the electronic chuck can be operated in a lithography exposure system for EUV lithography patterning, which is maintained in a vacuum environment to avoid EUV intensity loss. In the present disclosure, the terms mask, photomask, and mask plate are used interchangeably. In the present embodiment, the mask 18 is a reflective mask. An example structure of the mask 18 includes a substrate having a suitable material, such as a low thermal expansion material (LTEM) or fused quartz. In various examples, the LTEM includes TiO 2Doped SiO2 or other suitable materials with low thermal expansion. The mask 18 includes a reflective multilayer deposited on a substrate. The mask platform 16 is operable to translate in two horizontal directions, such as the X-axis direction and the Y-axis direction, so as to expose multiple different areas of the semiconductor wafer 22 to light with a pattern generated by the mask 18. The semiconductor wafer 22 may have a mask layer 26 thereon, which may be a photoresist layer sensitive to light with the pattern of the mask 18.

[0024] The projection optical module (or projection optical box (POB)) 180 is configured to image the pattern of the mask 18 onto the semiconductor wafer 22 fixed on the substrate stage 24 of the lithography exposure system 10. In some embodiments, the POB 180 has a refractive optical component (e.g., for a UV lithography exposure system) or alternatively a reflective optical component (e.g., for an EUV lithography exposure system) in various embodiments. Light directed from the mask 18 carrying an image of the pattern on the reticle is collected by the POB 180. The reflector 140 and the POB 180 can be collectively referred to as an optical module of the lithography exposure system 10. In some embodiments, the POB 180 includes at least six reflective optical components.

[0025] In some embodiments, the semiconductor wafer 22 may be made of silicon or other semiconductor materials. Alternatively or additionally, the semiconductor wafer 22 may include other elemental semiconductor materials, such as germanium (Ge). In some embodiments, the semiconductor wafer 22 is made of compound semiconductors such as silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs), or indium phosphide (InP). In some embodiments, the semiconductor wafer 22 is made of alloy semiconductors, such as silicon germanium (GaAsP) or gallium indium phosphide (GaInP). In some other embodiments, the semiconductor wafer 22 may be a silicon on insulator (SOI) or germanium on insulator (GOI) substrate.

[0026] In addition, the semiconductor wafer 22 may have various device components. Examples of device components formed in the semiconductor wafer 22 include transistors (e.g., metal oxide semiconductor field effect transistors (MOSFETs), complementary metal oxide semiconductor (CMOS) transistors, bipolar junction transistors (BJTs), high voltage transistors, high frequency transistors, p-channel and / or n-channel field effect transistors (PFETs / NFETs), etc.), capacitors, inductors, diodes, and / or other applicable components. Various processes are performed to form the device components, such as deposition, etching, implantation, lithography, annealing, and / or other suitable processes. In some embodiments, the semiconductor wafer 22 is coated with a resist layer (e.g., a mask layer 26) that is sensitive to EUV radiation. Various components including those described above are integrated together and are operable to perform lithography processes.

[0027] The lithography exposure system 10 may include or be integrated (or coupled) with other modules, such as a cleaning module or device or system designed to provide hydrogen to the light source 120 and a tin supply system designed to provide liquid tin. The hydrogen helps reduce contamination in the light source 120. The cleaning system can clean the collector of the light source 120, but is not limited to this. For example, tin debris may be deposited on various components of the lithography exposure system 10, and the cleaning system can exhaust hydrogen to the various components to remove the tin debris.

[0028] Before positioning the mask 18 in the system 10, the mask 18 may be inspected to determine if there are defects in the mask 18. In response to the presence of defects, the mask 18 may be sent for repair or rework before being used in the system 10. The repair or rework process may be performed by a mask repair device, which may include a beam source, such as an ion beam source or an electron beam source. Figure 1B and Figures 2 to 4 A mask repair apparatus 12 according to various embodiments is described.

[0029] Figure 1B A diagram of an electron beam or ion beam system 12 is shown, which includes a controller 135, a charged particle source (e.g., an electron source 102), one or more focusing lenses 106 and 109, a beam forming unit 104, and a shutter deflector unit 108. System 12 is an example of an ion or electron beam system, and some parts may be omitted from the view to simplify the illustration. Electron beam system 12 uses electron-based imaging to perform mask repair. In some embodiments, Figure 1B The focusing lenses 106 and 109 are cross-sections of a magnetic cylinder (eg, a magnetic disk) surrounding the electron beam and having a central opening for the electron beam to pass through. In some embodiments, the magnetic field of the magnetic cylinder is used to focus the electron beam.

[0030] In the electron beam system 12, an electron or ion source 102 provides an electron or ion emission 130. The electron emission 130 from the electron source 102 is received by a beam forming unit 104. The beam forming unit 104 generates an electron beam 132. The electron beam 132 is focused by one or more focusing lenses 106. The electron beam 132 is received by a shutter deflector unit 108. The shutter deflector unit 108 can turn the electron beam on and off. When the shutter deflector unit 108 is turned on and the electron beam is turned on, the electron beam 134 leaves the shutter deflector unit 108, passes through the focusing lens 109, and is focused on the mask 18 to generate a repair pattern 112 in the mask 18.

[0031] In some embodiments, the mask 18 is located on the platform 110, and the controller 135 moves the platform 110 to generate the repair pattern 112 by the movement of the platform 110. In some embodiments, the shutter deflector unit 108 of the system 12 deflects electrons. Based on the repair pattern, the electron beam 134 generates the repair pattern 112 on the mask 18. In some embodiments, in addition to the movement of the platform 110, the shutter deflector unit 108 deflects the electron beam 134 to generate the repair pattern 112 in the mask 18. In some embodiments, the controller 135 is coupled to the electron source 102, the beam forming unit 104, the shutter deflector unit 108, and the platform 110. The controller 135 can control the electron source 102 to adjust the intensity of the electron beam 134. In some embodiments, the controller 135 receives the repair pattern and generates the repair pattern 112 in the mask 18 by controlling the beam forming unit 104, the shutter deflector unit 108, and the platform 110. Therefore, by controlling the intensities of the electron beams 132 and 134 , the deflection of the electron beam 134 , and / or the movement of the stage 110 , the controller 135 of the electron beam lithography system 100 can generate the repair pattern 112 in the mask 18 .

[0032] In some embodiments, Figure 1B The charged particle source is an ion beam source. The beam forming unit 104, focusing lenses 106 and 109, and the shutter deflector unit 108 focus the ion beam on the mask 18 to generate a repair pattern 112 on the mask 18. In some embodiments, the ion beam includes hydrogen ions, which are hundreds of times heavier than electrons. Therefore, in some embodiments, the energy of the ion beam becomes less scattered and produces more local impacts inside the mask material compared to an electron beam. In some embodiments, gallium ions or helium ions are used for ion beam lithography.

[0033] Figures 2 to 4 is a schematic view of a mask repair apparatus or "system" 20, 20A, 20B according to various embodiments. Figure 2 An embodiment is shown in which one or more gas analysis devices are positioned on an electron beam column or an ion beam column of the mask repair tool 20 . Figure 3 An embodiment is shown in which one or more gas analysis devices are positioned within a chamber of the mask repair tool 20A. Figure 4 An embodiment is shown in which one or more gas analysis devices are positioned in a sub-chamber of the mask repair equipment 20B. In some embodiments, the gas analysis device is positioned in a column, a chamber, a sub-chamber, or a combination thereof. That is, in some embodiments, Figures 2 to 4 Two or all of the embodiments may be combined.

[0034] Figure 5 and Figure 6is a flow chart showing a method 1000 , 2000 of processing a semiconductor device according to various aspects of the present disclosure. Figure 5 and Figure 6 The steps shown can be based on the reference Figure 1A and Figure 1B The described systems 10, 12 and / or reference Figures 2 to 4 The described systems 20, 20A, 20B are implemented. Figure 5 and Figure 6 Flowcharts of methods 1000, 2000 for repairing masks and processing semiconductor devices according to one or more aspects of the present disclosure are shown. Methods 1000, 2000 are examples and are not intended to limit the present disclosure to what is explicitly shown in methods 1000, 2000. Additional steps may be provided before, during, and after methods 1000, 2000, and some of the steps described may be replaced, eliminated, or moved to other embodiments of the method. For simplicity, not all steps are described in detail herein. For example, steps related to identifying defects in the mask or mask board before steps 1010 and 2010 of methods 1000, 2000 are omitted. Similarly, steps after steps of methods 1000, 2000, such as those related to the segmentation and packaging of IC dies, are also omitted from view and are not described in detail herein. The following references Figures 1A to 4 The steps of the methods 1000 and 2000 are described with reference to the components of the systems 10, 12, 20, 20A, and 20B. It should be understood that in other embodiments, the methods 1000 and 2000 are not limited to being performed by the systems 10, 12, 20, 20A, and 20B, and may be performed by systems that differ from the systems 10, 12, and 20 in one or more aspects.

[0035] Figure 2 is a diagrammatic representation of a system 20 according to various embodiments. The system 20 may be Figure 1B 12 is an embodiment of the system. To simplify the description, Figure 2 Some components are omitted.

[0036] The system 20 may include a column 210 , a chamber or processing chamber 220 , a subchamber or loading chamber 230 , pumps or pump systems 250 , 260 , 270 , and first and second gas analysis devices 252 , 212 .

[0037] Column 210 may generate an electron beam or ion beam 240 that is incident on mask 218 in chamber 220. Column 210 may include a device similar in most respects to Figure 1BThe electron source 102, focusing lenses 106 and 109, beam forming unit 104, and one or more components of the shutter deflector unit 108 are shown in FIG. Column 210 is positioned above chamber 220 so that electron beam 240 can be directed downward into chamber 220. One or more valves may be present in column 210 and / or chamber 220, which open or close the communication between column 210 and chamber 220. For example, the valve may be closed when the pressure in column 210 is evacuated to a vacuum level to prevent the pressure in chamber 220 from affecting the pressure in column 210. The valve may be opened to allow electron beam 240 to enter chamber 220 for processing, such as repairing mask 218.

[0038] The first pump or pump system 250 may be fluidly connected to the column 210 via a first transfer line 254. In some embodiments, the first pump 250 is or includes an ion getter or an ion getter pump (IGP) and may be referred to as an IGP 250. The IGP 250 may be a vacuum pump that operates without moving parts and facilitates the formation of an ultra-high vacuum environment. The first pump 250 may work by ionizing the residual gas and capturing the resulting ions on the getter material, thereby effectively removing ions from the vacuum chamber (e.g., the column 210). Considering the sensitivity and high-precision processes used for electron beam generation, an ion getter pump may be beneficial because it can maintain an extremely low pressure environment. This is conducive to minimizing electron scattering, thereby improving high-resolution imaging, manufacturing, and / or repair. In one example, the operation of the first pump 250 may include sputtering, in which a high voltage electric field is applied between a cathode and an anode inside the pump chamber. This ionizes the residual gas molecules. Then, due to the electric field, the ions are accelerated toward the cathode. When the ions hit the cathode made of a material such as titanium, the ions cause sputtering of the cathode material. This sputtered material then chemically reacts with the ionized gas to form stable compounds that adhere to the cathode surface, effectively removing gas molecules from the chamber.

[0039] The first gas analysis device 252 may be installed in or included in the first transfer line 254. The first gas analysis device 252 installed in the first transfer line 254 of the IGP 250 may monitor outgassing and / or leakage during processing. In some embodiments, the first gas analysis device 252 may monitor and / or detect H 2 O, CO, CO 2 , H 2 、N 2 , O 2, CxHyOz, etc. The first gas analysis device 252 may perform one or more of mass spectrometry, Fourier transform infrared spectroscopy (FTIR), electrochemical sensing, photoionization detection, residual gas analysis, ion mobility spectrometry (IMS), etc. The first gas analysis device 252 may include a miniaturized mass spectrometer that can be directly integrated into the first transmission line 254 for performing mass spectrometry through real-time analysis. FTIR can be performed using a fiber optic probe or a series unit of the first gas analysis device 252 capable of performing in-situ FTIR analysis. An electrochemical sensor may be included in the first gas analysis device 252 and used for in-situ detection of a selected gas and may be directly installed in the first transmission line 254. A photoionization detector (PID) may be included in the first gas analysis device 252 and may be beneficial for in-situ monitoring of volatile organic compounds (VOCs). In some embodiments, the gas analysis device includes one or more residual gas analyzers (RGAs) that can be directly connected to the first transmission line 254 for in-situ analysis of residual gas. Ion mobility spectrometry (IMS) can be used for online monitoring and may be beneficial for detecting trace pollutants. The first gas analysis device 252 including data of detected gas contaminants is helpful in preventing contamination of the holes or lenses of the column 210. That is, the first gas analysis device 252 can help detect contaminants on the holes or lenses of the column 210 at an early stage. Leakage of the column 210 is a detectable source of outgassing in the vacuum environment of the column 210. In some embodiments, the first gas analysis device 252 can detect leaks in the column 210.

[0040] The second gas analysis device 212 can be mounted to a wall (e.g., a top cover, a side wall, a bottom wall, etc.) of the column 210 and can be in fluid communication with the interior of the column 210 for detecting leaks, degassing, or the like. The second gas analysis device 212 can be the same or similar in most respects to the first gas analysis device 252 just described. The second gas analysis device 212 can perform one or more of mass spectrometry, Fourier transform infrared spectroscopy (FTIR), electrochemical sensing, photoionization detection, residual gas analysis, ion mobility spectrometry (IMS), and the like. In some embodiments, the second gas analysis device 212 is a different type of gas analysis device than the first gas analysis device 252, or is a gas analysis device of the same type having a different configuration than the first gas analysis device 252. The first gas analysis device 252 can be or include an RGA suitable for detecting a first set of gases, while the second gas analysis device 212 is or includes a mass spectrometer suitable for detecting a different second set of gases.

[0041] In some embodiments, two or more first gas analysis devices 252 are connected to the first transfer line 254 and / or two or more second gas analysis devices 212 are connected to the sidewall of the column 210. This may be beneficial when detecting different types of gases and / or contaminants. For example, outgassing from contaminants on a hole or lens may have a first chemical composition (e.g., hydrocarbons, metal organic compounds, metal oxides, halogen compounds, etc.), while leaking gas from the external environment may have a second different chemical composition (e.g., H 2 O、N 2 , O 2 etc.) and enter column 210.

[0042] By detecting various pollutants, degassing gases and impurities, the first gas analysis device 252 and the second gas analysis device 212 can identify or help identify degassing sources, column leaks and / or gas impurities based on the detection results. In addition to pollutants introduced during processing or as a byproduct of processing, some pollutants may also be introduced through preventive maintenance (PM). In another example, the PM process may not be completely sufficient to remove all pollutants from the column 210. The first gas analysis device 252 and the second gas analysis device 212 can provide additional verification to determine whether the PM process removes all or most of the pollutants or whether a certain degree of pollutants are removed. The pollutants in the column 210 after the PM process are higher than a selected threshold (e.g., a few or less than one part per trillion (PPT) to one part per million (PPM), or another appropriate range), and the content may vary depending on the type of pollutant. For example, metal component pollutants may have a threshold of 1-5PPT or lower, while water vapor, hydrocarbons, and inert gases may have a threshold of about 5-10PPB or lower to about 1PPM or lower.

[0043] The chamber 220 may be the main chamber of the apparatus 20 and may be used as the primary environment for deposition and / or etching. The chamber 220 may be configured to operate under ultra-high vacuum (UHV) conditions, which may be advantageous in reducing contamination and improving deposition and / or etching quality. The chamber may include a mask platform 224 operable to hold a mask 218 and manipulated in multiple axes for precise alignment under the electron beam 240. The mask 218 may be a reference Figure 1A and 1B An embodiment of the mask 18 is described.

[0044] The chamber 220 may include a gas injection system that introduces (e.g., flows) gaseous and / or vaporized precursors 226 that interact with the electron beam 240 for deposition and / or etching. The gas injection system may include a gas supply 280 fluidly connected to the chamber 220 via one or more transfer lines 284.

[0045] The chamber 220 may include one or more pump systems 260, each of which may include one or more different vacuum pumps 264, 266, such as a turbo pump 266 and / or a dry or vortex pump 264 that facilitates establishing and maintaining UHV conditions. In some embodiments, the turbo pump 266 is positioned between the dry or vortex pump 264 and the chamber 220. In some embodiments, the dry pump 264 is operable to pump to a first vacuum level, and then the turbo pump 266 is operable to pump down to a second vacuum level (e.g., UHV) that is higher than the first vacuum level. It should be understood that a higher vacuum level may be associated with a lower pressure level.

[0046] The chamber 220 may include one or more ports for detectors and / or sensors, which may include devices for real-time monitoring of deposition rate, chamber pressure, in-situ characterization of deposited materials, and the like.

[0047] The components of chamber 220 just described may operate individually or in combination to provide a high vacuum (e.g., 1x10 -9 Up to 1x10 -12 The components may be or include materials that resist outgassing and chemical interaction with the precursors. One or more components such as the mask platform 224 may include temperature control for the mask 218, which may be beneficial for deposition and / or etching characteristics.

[0048] The subchamber 230 is attached to the chamber 220 and is operable to suck in the mask 218 from an external environment (e.g., a clean room of a semiconductor factory) and place the mask 218 in the chamber 220. The subchamber 230 is operable to remove the mask 218 from the chamber 220 and transfer the mask 218 to the external environment (e.g., to a carrier for a lithography system). For example, the subchamber 230 may have a transfer device 234 positioned therein, such as a robotic arm 234, which is operable to transfer the mask 218 into or out of the chamber 220. The robotic arm 234 may be an advantageous component. It is used to automatically transfer the mask 218 between the subchamber 230 that can be used for pre-processing or post-processing processes and the chamber 220 where repair work is performed. The robotic arm 234 may include a gripper or end effector that is operable to safely hold and transport the mask without causing scratches, damage, or contamination. The robotic arm 234 may include one or more articulated joints, which may include 4 to 6 degrees of freedom, which allow for precise positioning and orientation of the mask 218. The robotic arm 234 may include one or more drive mechanisms, such as stepper motors or servo motors that facilitate high-precision movement. The robotic arm 234 may include one or more sensors, such as optical sensors or proximity sensors, which are useful for confirming the position of the mask 218 and providing safe transfer of the mask 218 between the chambers 220, 230.

[0049] The chamber 230 may frequently come into contact with the external environment. Therefore, the chamber 230 is a possible source of contaminants entering the chamber 220 and the column 210. The chamber 230 may be attached to or include a pump system 270, which is operable to reduce the pressure in the chamber 230. By reducing the pressure in the chamber 230, the pressure in the chamber 230 and the chamber 220 can be substantially balanced. The pump system 270 can also remove contaminants from the chamber 230 before the mask 218 is transferred to the chamber 220 and / or the mask 218 is transferred from the chamber 220. The pump system 270 may include one or more of a turbo pump 276, a dry pump or a vortex pump 274. In some embodiments, the turbo pump 276 is positioned between the dry pump or the vortex pump 274 and the chamber 230. In some embodiments, the dry pump 274 is operable to pump to a first vacuum level, and then the turbo pump 276 is operable to pump to a second vacuum level (e.g., UHV) higher than the first vacuum level.

[0050] Figure 3 is a diagrammatic representation of a system 20A according to various embodiments. The system 20A may be Figure 1B Embodiments of the system 12 and may be similar in most respects to Figure 2 For simplicity of description, Figure 3 Some components are omitted from the view.

[0051] The system 20A may include a third gas analysis device 222 and a fourth gas analysis device 262. The third gas analysis device 222 and the fourth gas analysis device 262 may be reference Figure 2 Any of the gas analysis devices described. The third and fourth gas analysis devices 222, 262 may each perform one or more of mass spectrometry, Fourier transform infrared spectroscopy (FTIR), electrochemical sensing, photoionization detection, residual gas analysis, ion mobility spectrometry (IMS), and the like.

[0052] The third gas analysis device 222 may be connected to the chamber 220. For example, the third gas analysis device 222 may be mounted to a side wall of the chamber 220 and may be in fluid communication with the chamber 220 so that the gas medium inside may flow from the chamber 220 into the third gas analysis device 222. The third gas analysis device 222 may be operable to detect the process gas (e.g., F 2 , Cl 2 ,I 2 、NO 2 ,Cr,TEOS,H 2 O、NH 3 , H 2, CxHyOz), degassing of contaminants, leaked gases and / or process byproducts. For example, the third gas analysis device 222 is operable to detect impurities in the process gas. Impurities can be introduced at the gas supply source 280, the delivery line 284, or both. The third gas analysis device 222 is operable to detect degassing of contaminants. For example, contaminants may be present on the inner wall of the chamber 220, the surface of the mask platform 224, the mask 218 itself, or a combination thereof. The third gas analysis device 222 is operable to detect leakage of external ambient air into the chamber 220. The third gas analysis device 222 is operable to detect byproducts of the EBID or EBIE process. For example, some material particles formed by the reaction gas may not be deposited or attached to the surface of the mask 218, but may float in the chamber 220. The third gas analysis device 222 is operable to detect such particles as byproducts of the EBID or EBIE process.

[0053] Similar to the previous reference Figure 2 , the system 20A may include a single third gas analysis device 222, as shown, or may include two or more third gas analysis devices 222 in some embodiments. For example, two or more different third gas analysis devices 222 may be mounted to the sidewall of the chamber 220. The two or more different third gas analysis devices 222 are operable to detect different gases and / or particle byproducts from other gases, so that two or more types of gas analysis (e.g., leaks and outgassing) may be performed. Based on the two or more types of gas analysis, various steps may be performed, such as identifying and repairing leaks, cleaning or removing contaminants that cause outgassing, adjusting process parameters to reduce the generation of particle byproducts, etc.

[0054] like Figure 3 As shown, in some embodiments, the system 20A includes a fourth gas analysis device 262. The fourth gas analysis device 262 is coupled to an exhaust line 268 that connects the pump system 260 to the chamber 220. For example, the exhaust line 268 can be an exhaust line connected between the turbo pump 266 and the chamber 220. The fourth gas analysis device 262 can be in fluid communication with the exhaust line 268 so that exhaust gas removed from the chamber 220 can flow into the fourth gas analysis device 262. The fourth gas analysis device 262 can be similar in most respects to the previously described gas analysis device 262. Figure 2 and Figure 3The first, second and / or third gas analysis devices 252, 212, 222 described. That is, the fourth gas analysis device 262 can be or include a residual gas analyzer, a mass spectrometer, a PID, etc. In some embodiments, the fourth gas analysis device 262 includes two or more gas analysis devices, which can be of the same type but different configurations from each other or different types from each other. For example, two or more different fourth gas analysis devices 262 can be installed to the exhaust line 268. Two or more different fourth gas analysis devices 262 are operable to detect gases and / or particulate byproducts that are different from each other so that two or more types of gas analysis (e.g., leaks and outgassing) can be performed. Based on two or more types of gas analysis, various steps can be performed, such as identifying and repairing leaks, cleaning or removing contaminants that cause outgassing, adjusting process parameters to reduce the generation of particulate byproducts, etc.

[0055] Figure 4 is a diagrammatic representation of a system 20B according to various embodiments. The system 20B may be Figure 1B Embodiments of the system 12 and may be similar in most respects to Figure 2 and Figure 3 The systems 20 and 20A are similar. To simplify the description, Figure 4 Some components are omitted from the view.

[0056] The system 20B may include a fifth gas analysis device 232 and a sixth gas analysis device 272. The fifth gas analysis device 232 and the sixth gas analysis device 272 may be reference Figure 2 The fifth gas analysis device 232 and the sixth gas analysis device 272 may each perform one or more of mass spectrometry, Fourier transform infrared spectroscopy (FTIR), electrochemical sensing, photoionization detection, residual gas analysis, ion mobility spectrometry (IMS), and the like.

[0057] The fifth gas analysis device 232 may be connected to the loading chamber 230. For example, the fifth gas analysis device 232 may be mounted to a side wall of the loading chamber 230 and may be in fluid communication with the loading chamber 230, so that the gas medium in the loading chamber 230 may flow from the loading chamber 230 into the fifth gas analysis device 232. The fifth gas analysis device 232 may be used to detect ambient gases (e.g., H 2 O, CO, CO 2 , H 2 、N 2 , O 2, CxHyOz), degassing of contaminants and / or process byproducts. For example, the fifth gas analysis device 232 is operable to detect leakage of external ambient air into the loading chamber 230 and / or incomplete evacuation of external ambient air via the pump system 270. The fifth gas analysis device 232 is operable to detect degassing of contaminants. For example, contaminants may be present on the inner walls of the processing chamber 220, the robot arm 234, or both. The fifth gas analysis device 232 is operable to detect byproducts of the EBID or EBIE process that float into the processing chamber 220. For example, some material particles formed by the reaction gas may not be deposited or attached to the surface of the processing chamber 220. The fifth gas analysis device 232 is operable to detect such particles as byproducts of the EBID or EBIE process of the processing chamber 220.

[0058] Similar to the previous reference Figure 2 , the system 20B may include a single fifth gas analysis device 232, as shown, or in some embodiments may include two or more fifth gas analysis devices 232. For example, two or more different fifth gas analysis devices 232 may be mounted to the side wall of the loading chamber 230. The two or more different fifth gas analysis devices 232 are operable to detect gases from different gases and / or particulate byproducts from each other, so that two or more types of gas analysis (e.g., leaks and outgassing) can be performed. Based on the two or more types of gas analysis, various steps can be performed, such as identifying and repairing leaks, cleaning or removing contaminants that cause outgassing, adjusting process parameters to reduce the generation of particulate byproducts, etc.

[0059] like Figure 4 As shown, in some embodiments, the system 20B includes a sixth gas analysis device 272. The sixth gas analysis device 272 is connected to an exhaust line 278 that connects the pump system 270 to the loading chamber 230. For example, the exhaust line 278 can be an exhaust line connected between the turbo pump 276 and the loading chamber 230. The sixth gas analysis device 272 can be in fluid communication with the exhaust line 278 so that the ambient atmospheric gas exhausted from the loading chamber 230 and the gas produced by the pump system 270 can flow into the sixth gas analysis device 272. The sixth gas analysis device 272 can be similar to the first, second, third, fourth and / or fifth gas analysis devices 252, 212, 222, 262, 232 in most respects. Previously referenced Figures 2 to 4Description. That is, the sixth gas analysis device 272 can be or include a residual gas analyzer, a mass spectrometer, a PID, etc. In some embodiments, the sixth gas analysis device 272 includes two or more gas analysis devices, which can be of the same type but different configurations from each other or different types from each other. For example, two or more different sixth gas analysis devices 272 can be installed to the exhaust line 274. Two or more different sixth gas analysis devices 272 are operable to detect gases and / or particulate byproducts that are different from each other, so that two or more types of gas analysis (e.g., leaks and outgassing) can be performed. Based on two or more types of gas analysis, various steps can be performed, such as identifying and repairing leaks, cleaning or removing contaminants that cause outgassing, adjusting process parameters to reduce the generation of particulate byproducts, etc.

[0060] In reference Figures 2 to 4 In the above description, the gas analysis devices 252, 212, 222, 262, 232, 272 are operable to determine the chemical composition of the gaseous medium in the column 210, the processing chamber 220 and / or the loading chamber 230. In some embodiments, the system 20, 20A, 20B may include a gas flow analysis device operable to determine other non-chemical characteristics of the gaseous medium. For example, one or more mass flow controllers (MFCs) may be coupled to the transmission line 284 that delivers the process gas to the processing chamber 220. The gas analysis device may be coupled to the MFC to detect the flow rate of one or more process gases (or purge gases) flowing into the chamber 220. In general, the "gas analysis device" mentioned throughout the specification refers to a chemical composition analysis device rather than a usage analysis device.

[0061] As mentioned earlier, Figures 2 to 4 The depicted embodiments may be combined. For example, the system 20 may include any combination of one or more (eg, all) of the first, second, third, fourth, fifth, and sixth gas analysis devices 252, 212, 222, 262, 232, 272.

[0062] The inclusion of gas analysis devices 252, 212, 222, 262, 232, 272 facilitates detection of outgassing, leaks, impurities, byproducts in column 210, process chamber 220, and load chamber 230 during repair of mask 218. Various forms of detection facilitate preventing aperture and / or lens contamination, improving process stability, and improving mask repair yield.

[0063] Figure 5 is a flow chart of a method 1000 for performing in-situ anomaly detection by one or more gas analysis devices during a mask repair process in an electron beam or ion beam repair tool according to various embodiments. The method 1000 may be referred to as Figures 2 to 4The method 1000 may be performed by the described system 20, 20A, 20B, or by a similar system having fewer or additional components relative to the components of the system 20, 20A, 20B. In some embodiments, one or more operations of the method 1000 are performed or controlled by a controller, such as ... Figure 1B The controller 135 described. For example, the controller 135 can be in electrical and / or data communication with the gas analysis devices 252, 212, 222, 262, 232, 272 to control the operation of the gas analysis devices and / or receive data from the gas analysis devices 252, 212, 222, 262, 232, 272.

[0064] exist Figure 5 In the method 1000, step 1010 is started by positioning the mask in the loading chamber of the electron beam or ion beam mask repair equipment. For example, the mask 218 can be positioned in the loading chamber 230 of the electron beam or ion beam mask repair equipment 20, 20A, 20B. In step 1010, the mask 218 can be positioned in the loading chamber 230 through the robot arm 234, which can remove the mask 218 from the carrier and retract to position the mask 218 in the loading chamber 230. The loading chamber 234 can then be closed in preparation for evacuating the loading chamber 234 by the pump system 270.

[0065] After step 1010, method 1000 proceeds to step 1020. Step 1020 is after step 1010. In step 1020, a vacuum is formed in the loadlock chamber in which the mask is positioned. For example, a vacuum can be formed in the loadlock chamber 230 via the pump system 270 having the mask 218 therein. The formation of the vacuum can include one or more operations. For example, the dry pump 274 can form an initial lower vacuum (e.g., higher pressure) in the loadlock chamber 230, and then the turbo pump 276 can form a second higher vacuum (e.g., UHV, lower pressure) in the loadlock chamber 230.

[0066] Step 1070 is performed after or concurrently with step 1020. Step 1070 may also be performed after or concurrently with steps 1030, 1050, and 1060, as shown, and will also be described in detail with reference to each of steps 1030, 1050, and 1060. Step 1070 includes detecting one or more anomalies in the operation of the mask repair apparatus or system (e.g., system 20, 20A, 20B) via one or more gas analysis devices (e.g., gas analysis devices 252, 212, 222, 262, 232, 272). In the context of step 1020, during and / or after the vacuum is formed in the load chamber, in step 1070, one or more anomalies may be detected, such as outgassing of contaminants and / or leakage from the external environment. For example, the fifth gas analysis device 232 and / or the sixth gas analysis device 272 may detect the chemical composition of the gaseous medium in and / or exhausted from the load chamber 230. The chemical composition of the gaseous medium may include one or more gases associated with the external environment due to leakage of the loading chamber 230, one or more gases associated with outgassing of contaminants (e.g., particulates) in the loading chamber 230, combinations thereof, and the like.

[0067] Step 1070 is followed by step 1080. In step 1080, it is determined whether an abnormality is detected in the loading chamber (e.g., loading chamber 230) and / or in the gaseous medium exhausted from the loading chamber. Step 1080 can be performed by a controller that performs data communication with a gas analysis device that analyzes the gaseous medium of the loading chamber. In some embodiments, the determination includes determining the degree of one or more components of the gaseous medium and determining whether the degree exceeds one or more of the threshold values. Based on this determination, method 1000 can proceed from step 1080 to step 1090 or to one or more of steps 1030, 1040, 1050, or 1060. That is, in some embodiments, step 1030 or step 1040 can be performed after step 1020 only when the gas analysis device that analyzes the gas output of the loading chamber does not detect an abnormality. In some embodiments, steps 1030 and / or 1040 can be performed regardless of whether an abnormality is detected via the gas analysis device associated with step 1020. For example, when a leak anomaly is detected in the loadlock 230, the method 1000 may proceed to step 1090 to repair the leak because the leak may impair the ability to draw a vacuum in the loadlock 230, which may introduce ambient gas contaminants into the process chamber 220 when the mask 218 is transferred from the loadlock 230 to the process chamber 220. In another example, when an outgassing anomaly is detected in the loadlock 230, cleaning the loadlock 230 to remove the source of outgassing contamination in step 1090 may be postponed until after the repair process has been completed (e.g., after step 1060) after the mask 218 is currently being repaired. However, above a selected threshold level, outgassing may be at a level that is associated with a sufficiently high probability of repair failure of the mask 218. In such an example, the mask 218 may be removed from the loadlock chamber 230 so that the loadlock chamber 230 may be cleaned in step 1090 before the mask 218 is reloaded into the loadlock chamber 230 in step 1010 in preparation for the processing chamber 220 to be repaired in step 1060 .

[0068] Step 1020 is followed by step 1030. In step 1030, a vacuum is formed in a process chamber (e.g., process chamber 220), and a vacuum is formed in a column (e.g., column 210). The vacuum in column 210 may be formed via an IGP (e.g., IGP 250). The vacuum in process chamber 220 may be formed via a pump system (e.g., pump system 260), and may include one or more operations, similar to those described with reference to step 1020. That is, dry pump 264 may form a first degree of vacuum that is relatively low (e.g., higher pressure), and then turbo pump 266 may form a second degree of vacuum that is relatively high (e.g., UHV, low pressure). In some embodiments, the degree of vacuum in process chamber 220 is approximately the same as the degree of vacuum in loading chamber 230 to avoid gas from flowing from loading chamber 230 to process chamber 220 during the transfer of mask 218 to the process chamber. In some embodiments, the degrees of vacuum are different from each other. Forming a vacuum in the column and forming a vacuum in the process chamber may be performed simultaneously in a single step, such as Figure 5 As shown, or can be performed at different times in two different steps. That is, in some embodiments, forming a vacuum in the column can be before forming a vacuum in the process chamber, or forming a vacuum in the process chamber can be before forming a vacuum in the column.

[0069] Step 1070 is performed after step 1030 or simultaneously with step 1030. In the context of step 1030, during and / or after forming a vacuum in the process chamber and / or column, in step 1070, one or more anomalies, such as degassing of contaminants and / or leakage to the external environment, may be detected. For example, the third gas analysis device 222 and / or the fourth gas analysis device 262 may detect the chemical composition of the gaseous medium in the process chamber 220 and / or exhausted from the process chamber 220. In another example, the first gas analysis device 252 and / or the second gas analysis device 212 may detect the chemical composition of the gaseous medium in the column 210 and / or exhausted from the column 210. The chemical composition of any gaseous medium may include one or more gases associated with the external environment due to leakage of the process chamber 220, one or more gases associated with degassing of contaminants (e.g., particles) in the process chamber 220 or column 210, combinations thereof, and the like.

[0070] Step 1070 is followed by step 1080. In step 1080, it is determined whether an abnormality is detected in a process chamber (e.g., process chamber 220) or column and / or in a gaseous medium exhausted from the process chamber or column. In some embodiments, the determination includes determining the extent of one or more components of one or both gaseous media and determining whether the extent exceeds one or more of a threshold value. Based on the determination, method 1000 may proceed from step 1080 to step 1090 or to one or more of steps 1040, 1050, or 1060. That is, in some embodiments, step 1040 may be performed only after step 1030. If no abnormality is detected by a gas analysis device that analyzes the gas output of the process chamber or column. In some embodiments, step 1040 may be performed regardless of whether an abnormality is detected by a gas analysis device associated with step 1030. For example, when etching the mask 218 while repairing the mask 218 in step 1060, when a process gas impurity anomaly is detected in the process chamber 220, the method 1000 may proceed to step 1090 to repair the gas supply source 280 and / or the transfer line 284, because the impurities may impair the ability to deposit and / or etch. In another example, when a degassing anomaly is detected in the process chamber 220 or the column 210, cleaning the process chamber 220 or the column 210 in step 1090 to remove the source of degassing contamination may be delayed until after the mask 218 currently being repaired has completed the repair process (e.g., after step 1060). However, above a selected threshold level, the degassing may be at a level associated with a sufficiently high probability of failure of the repair of the mask 218. In such an example, the mask 218 may be retained in or removed from the load chamber 230 so that the process chamber 220 and / or column 210 may be cleaned in step 1090 in preparation for repairing the process chamber 220 in act 1060 before the mask 218 is loaded into the process chamber 220 in step 1040 .

[0071] Step 1030 is followed by step 1040. After vacuum is formed in the load chamber, the process chamber, and the column, the mask can be transferred from the load chamber to the process chamber in step 1040. For example, the mask 218 can be transferred from the load chamber to the process chamber. The load chamber 230 is loaded onto the mask platform 224 of the process chamber 220.

[0072] Step 1040 is followed by step 1050. After the mask is transferred to the process chamber, a process gas may flow into the process chamber in step 1050. The process gas may be or include a reaction gas for EBID or EBIE, a purge gas (e.g., N 2For example, the process gas may flow from the gas supply source 280 into the process chamber 220 via the transfer line 284. During or after the process gas flows into the process chamber 220 in step 1050, an abnormality may occur and be detected in step 1070.

[0073] In the context of step 1050, during and / or after the process gas flows into the process chamber, in step 1070, one or more anomalies, such as impurities in the process gas, degassing of the process gas, contaminants from the external environment, and / or leakage, may be detected. For example, the third gas analysis device 222 and / or the fourth gas analysis device 262 may detect the chemical composition of the gaseous medium in and / or exhausted from the process chamber 220. The chemical composition of the gaseous medium may include one or more impurities. Associated with the process gas due to, for example, contamination of the gas supply 280. Although leakage and / or degassing of contaminants may be detected during and / or after the vacuum is formed in the process chamber 220, the leakage and / or degassing may continue to be detected during and / or after the process gas flows from the gas supply 280 into the process chamber.

[0074] Step 1070 is followed by step 1080. In step 1080, it is determined whether an abnormality is detected in the process chamber (e.g., process chamber 220) and / or in the gaseous medium exhausted from the process chamber. In some embodiments, the determination includes determining the degree of one or more components (e.g., impurities) of the gaseous medium and determining whether the degree exceeds one or more of a threshold value. Based on the determination, method 1000 may proceed from step 1080 to step 1090 or step 1060. That is, in some embodiments, step 1060, which may be subsequent to step 1050, may be performed only if the gas output of the process chamber is detected through a gas analysis device without abnormal conditions (e.g., when impurities are present in the process gas). In some embodiments, step 1060 may be performed regardless of whether an abnormality is detected via a gas analysis device associated with step 1050. For example, when a process gas impurity anomaly is detected in the process chamber 220, the method 1000 may proceed to step 1090 to repair the gas supply source 280 and / or the transfer line 284 because the impurities may impair the ability to deposit and / or etch the mask 218 while the mask 218 is being repaired in step 1060. If a degassing anomaly is detected in the process chamber 220, cleaning the process chamber 220 in step 1090 to remove the source of outgassing contaminants may be delayed until after the mask 218 currently being repaired has completed the repair process (e.g., after step 1060). However, above a selected threshold level, the outgassing may be at a level associated with a sufficiently high probability of repair failure of the mask 218. In such an example, the mask 218 may be removed from the process chamber 220 so that the process chamber 220 may be cleaned in step 1090 before the mask 218 is reloaded into the process chamber 220 (e.g., returning to step 1040) in preparation for repairing the process chamber 220 in step 1060.

[0075] Step 1060 is performed after or simultaneously with step 1050. After or during the flow of the process gas into the process chamber, the mask can be repaired in step 1060 by an electron beam (e.g., EBID, EBIE) or an ion beam. The repair in step 1060 can include one or both of a subtractive repair (e.g., EBIE) and an additive repair (e.g., EBID). In a subtractive repair, the mask may include excess material. Therefore, an electron beam or ion beam can be used to locally mill or etch away the excess material. The electron beam or ion beam is controlled to remove the defect, leaving the surrounding area intact. In an additive repair, the material may be missing or have obvious defects, and the electron beam or ion beam can be used to deposit the material onto the mask. This can be achieved through electron beam induced deposition (EBID), where a gas precursor is introduced into the process chamber and decomposed by an electron beam or ion beam to leave a selected material. The one or more gas precursors used for additive electron beam mask repair in step 1050 may include carbon-based materials (e.g., methane, ethylene, etc.), metal materials (e.g., tungsten hexafluoride for tungsten, trimethylaluminum for depositing aluminum, etc.), insulating materials (e.g., tetraethyl orthosilicate for silicon dioxide, silicon tetrachloride for silicon-based insulators, etc.), other materials (e.g., copper acetylacetonate for copper, titanium tetrachloride for titanium, etc.), or mixed compositions (e.g., organic metal compounds or other alloy materials for compound semiconductors), etc. During or after repairing the mask in step 1060, an abnormality may be detected in step 1070.

[0076] In the context of step 1060, during and / or after repairing the mask, in step 1070, one or more anomalies, such as reaction byproducts in the exhaust gas, can be detected. For example, the third gas analysis device 222 and / or the fourth gas analysis device 262 can detect the chemical composition of the gaseous medium in and / or exhausted from the processing chamber 220. The chemical composition of the gaseous medium can include one or more byproducts associated with the EBID or EBIE process, for example, due to improper or inaccurate parameter configuration of the EBID or EBIE process, the flow rate of one or more process gases can cause a high level of byproducts to be formed outside of the deposition or etching performed on the photomask surface. In another example, although the leakage and / or outgassing of contaminants can be detected during and / or after the vacuum is formed or the process gas is flowed in the processing chamber 220, the leakage and / or outgassing can continue to be detected through the electron beam or ion beam during and / or after the mask is repaired in the processing chamber 220.

[0077] Step 1070 is followed by step 1080. In step 1080, it is determined whether an abnormality is detected in the process chamber (e.g., process chamber 220) and / or in the gaseous medium exhausted from the process chamber. In some embodiments, the determination includes determining the extent of one or more components (e.g., byproducts) present in the gaseous medium and determining whether the extent exceeds one or more of the threshold values. Based on the determination, method 1000 may proceed from step 1080 to step 1090 or step 1060. That is, in some embodiments, the detection and determination of steps 1070 and 1080 may continue to be performed at the same time in step 1060. Only when an abnormality (e.g., a high degree of byproducts in the exhaust gas) is not detected by the gas analysis device that analyzes the gas output of the process chamber. In some embodiments, step 1060 may continue to be performed regardless of whether one or more abnormalities are detected via the gas analysis device associated with step 1060. For example, when a process gas byproduct anomaly is detected in the process chamber 220, the method 1000 may delay proceeding to step 1090 to adjust the reaction parameters because repair of the mask may have been partially completed in step 1060 and stopping the repair may result in scrapping the mask. In another example, when the repair process may be stopped without scrapping the mask, when the byproduct level in the exhaust gas is above a selected threshold level, the byproduct level may be at a level associated with a sufficiently high probability of failure of repair of the mask 218. In such an example, repair of the mask 218 may be stopped and the mask 218 may be removed from the process chamber 220 (e.g., moved to the load chamber 230) so that the process parameters may be adjusted in step 1090 before reloading the mask 218 into the process chamber 220 (e.g., returning to step 1040) in preparation for repairing the process chamber 220 using the new parameters in step 1060.

[0078] Additional steps may be performed after step 1060. For example, after repairing the mask, the mask may be moved from the processing chamber to a loading chamber, and then from the loading chamber to a carrier outside the mask repair apparatus. In some embodiments, the mask may then be installed in a lithography apparatus (e.g., an EUV stepper) for producing semiconductor wafers. Figure 6 A method 2000 for producing a semiconductor wafer using a mask repaired according to the method 1000 according to various embodiments is described in more detail.

[0079] Figure 6 is a flow chart of method 2000 according to various embodiments.

[0080] exist Figure 6 In the method 2000, step 2010 is performed, which includes forming a repaired mask in a mask repair device (e.g., system 20, 20A, 20B), the mask repair device including an electron beam or ion beam generator and one or more gas analysis devices, as described in reference Figures 1B to 4 Step 2010 may include referring to Figure 5 The described method 1000 has substantially the same or most of the steps.

[0081] Step 2020 follows step 2010. After the repair mask is formed in step 2010, the repair mask is installed in a processing device, such as Figure 1A 1. For example, the repaired reticle can be mounted to the mask stage 16 of the lithography system 10.

[0082] Step 2030 may be after or before step 2020. In step 2030, the wafer may be wafer 22 and may include one or more semiconductor devices, which may be complete or in an intermediate stage of processing. Wafer 22 may have a mask layer 26 thereon, such as a photoresist layer that may be patterned by exposure to EUV light generated by lithography system 10. The semiconductor device may be any semiconductor device, such as but not limited to a logic device, a storage device, or any other semiconductor device. The semiconductor device typically includes a semiconductor device layer, a front interconnect structure, an optional back interconnect structure, and one or more electrical contacts. In most embodiments, the wafer is a semiconductor wafer having a plurality of integrated circuit (IC) chips or dies formed therein. The semiconductor device layer may include a semiconductor substrate, which may be referred to as a substrate. The substrate may be any suitable substrate. In some embodiments, the substrate may be a semiconductor wafer. In some embodiments, the substrate may be a single crystal silicon (Si) wafer, an amorphous Si wafer, a gallium arsenide (GaAs) wafer, or any other semiconductor wafer.

[0083] The semiconductor device layer includes one or more semiconductor devices. The semiconductor device included in the semiconductor device layer can be any semiconductor device in various embodiments. In some embodiments, the semiconductor device layer includes one or more transistors, which can include any suitable transistor structure, including, for example, a planar transistor, a fin transistor (FinFET) or a nanostructure transistor, such as a gate-all-around (GAA) transistor, etc. In some embodiments, the semiconductor device layer includes one or more GAA transistors. In some embodiments, the semiconductor device layer can be a logic layer containing one or more semiconductor devices, and can also include their interconnection structure, which is configured and arranged to provide a logic function, such as AND, OR, XOR, XNOR, or NOT, or a storage function, such as a trigger or a latch. In some embodiments, the semiconductor device layer can include a memory device, which can be any suitable memory device, such as a static random access memory (SRAM) device. The storage device can include a plurality of storage cells configured in rows and columns, but other embodiments are not limited to this arrangement. Each storage cell can include a plurality of transistors (e.g., six) connected between a first voltage source (e.g., VDD) and a second voltage source (e.g., VSS or ground), so that one of the two storage nodes can be occupied by the information to be stored, and the supplementary information can be stored in the other storage node. The semiconductor device layer of the device may also include various circuits electrically coupled to the semiconductor device layer. For example, the semiconductor device layer may include power management or other circuits electrically coupled to one or more semiconductor devices of the semiconductor device layer. The power management circuit may include any appropriate circuit for controlling or otherwise managing communication signals (e.g., input power signals) to or from the semiconductor devices of the semiconductor device layer. In some embodiments, the power management circuit may include a power gating circuit that may, for example, reduce power consumption by cutting off current to unused circuit blocks (e.g., blocks or electrical features in the semiconductor device layer), thereby reducing standby or leakage power. In some embodiments, the semiconductor device layer includes one or more switching devices, such as a plurality of transistors, for transmitting electrical signals to or receiving electrical signals from semiconductor devices in the semiconductor device layer, such as to turn on and off circuits (e.g., transistors, etc.) of the semiconductor device layer.

[0084] Step 2040 is after steps 2020 and 2030. When the repaired mask and semiconductor wafer are in place in a chamber of a processing device (e.g., lithography system 10), light is directed to the repaired mask in step 2040. The light may be EUV light, such as light from a reference Figure 1AThe light source 120 is depicted as generating light radiation 84. The light may be directed directly onto the repaired reticle, or may pass through a film mounted on and protecting the repaired reticle. The light may be emitted from an illuminator (e.g., a reflector 140) to be incident on the repaired mask. The repaired mask may be translated in a horizontal plane through the mask platform 16 so that the light, which may be a stripe, may scan across the repaired mask.

[0085] Step 2040 is followed by step 2050. After the light is directed to the repaired mask in step 2040, the light is reflected by the repair mask based on its pattern, and in step 2050, the layer of the semiconductor wafer is patterned by or based on the reflected light of the repair mask having the pattern. For example, the reflected light having the pattern of the repair mask may be incident on the photoresist layer 26 via the POB 180. The pattern may thus be transferred to the photoresist layer 26. The photoresist layer 26 may then be processed to remove or retain the portion of the photoresist layer 26 exposed to the reflected light. After the photoresist layer 26 is patterned, which forms an opening in the photoresist layer 26, one or more material layers located below the photoresist layer 26 and exposed by the opening may be etched to transfer the pattern of the photoresist layer 26 to the underlying material layer.

[0086] Embodiments may provide advantages. Repairing a mask through a mask repair apparatus 20, 20A, 20B including a gas analysis device 212, 252, 222, 232, 262, 272 may allow for early and accurate detection of contaminants, leaks, impurities, and byproducts, which may improve the yield of the mask repair apparatus 20, 20A, 20B and extend the life of parts of the mask repair apparatus 20, 20A, 20B (e.g., the aperture and / or lens of the column 210).

[0087] According to at least one embodiment, a method includes: positioning a mask in a processing chamber of a mask repair device; and determining whether a first abnormality exists during the formation of a first vacuum in a column above the processing chamber through a first gas analysis device; determining whether a second abnormality exists during the formation of a second vacuum in the processing chamber through a second gas analysis device; determining whether a third abnormality exists during the flow of a processing gas into the processing chamber through a third gas analysis device; determining whether a fourth abnormality exists during the process of irradiating the mask with an electron beam or an ion beam using the processing gas in the processing chamber through a fourth gas analysis device; in response to determining that one of the first, second, third or fourth abnormalities exists: stopping guiding the electron beam or the ion beam to the mask; and performing repairs related to the existence of the first, second, third or fourth abnormality.

[0088] In some embodiments, determining whether the first abnormality exists includes: determining whether there is degassing of contaminants in the column; or determining whether there is a leak in the column.

[0089] In some embodiments, determining whether the degassing is present comprises analyzing the gas medium of the column via the first gas analysis device installed to a transfer line connected to an ion getter pump.

[0090] In some embodiments, determining whether the leak exists comprises analyzing the gaseous medium of the column via a residual gas analysis device mounted to a wall of the column.

[0091] In some embodiments, determining whether the second abnormality exists includes: exhausting the gas medium in the processing chamber through a pump system; and analyzing the gas medium through the second gas analysis device.

[0092] In some embodiments, exhausting the gaseous medium includes: forming a second vacuum through a first pump including a dry pump or a vortex pump and a second pump including a turbo pump, and analyzing the gaseous medium includes analyzing the gaseous medium through the second gas analysis device installed in the exhaust pipeline between the processing chamber and the turbo pump.

[0093] In some embodiments, determining whether the third abnormality exists includes determining whether the level of impurities in the process gas is greater than a threshold.

[0094] In some embodiments, determining whether the fourth abnormality exists includes determining whether a reaction byproduct exists in the gas medium exhausted from the process chamber at a level greater than a threshold.

[0095] According to at least one embodiment, a method includes: forming a repair mask through a mask repair device including an electron beam source or an ion beam source, the forming including: detecting at least one abnormality via a gas analysis device installed to at least one of a column, a processing chamber or a loading chamber of the mask repair device; placing the repair mask in a lithography device; positioning a semiconductor wafer in the lithography device; and patterning a mask layer of the semiconductor wafer based on a pattern of the repair mask.

[0096] In some embodiments, the detecting comprises at least one of: detecting a leak within the load chamber; or detecting outgassing of contaminants in the load chamber.

[0097] In some embodiments, the detecting comprises at least one of: detecting a leak in the column; or detecting outgassing of contaminants within the column.

[0098] In some embodiments, the detecting comprises at least one of: detecting a leak within the process chamber; detecting impurities in a process gas flowing into the process chamber; or detecting outgassing of contaminants in the process chamber.

[0099] In some embodiments, forming the repair mask comprises: performing electron beam induced deposition (EBID) on the mask; and detecting the level of particle byproducts generated by EBID through the gas analysis device.

[0100] In some embodiments, forming the repair mask comprises: performing electron beam induced etching (EBIE) on the mask; and detecting the level of particle byproducts generated by the EBIE through the gas analysis device.

[0101] According to at least one embodiment, a system includes: a processing chamber having a mask platform therein; a column above the processing chamber, the column having a beam source therein; a loading chamber adjacent to the processing chamber; a first pump system connected to the processing chamber; a second pump system connected to the loading chamber; an ion getter pump connected to the column; and at least one of: a first gas analysis device mounted to a first transfer line of the ion getter pump; a second gas analysis device mounted to a first wall of the column; a third gas analysis device mounted to a second wall of the processing chamber; a fourth gas analysis device mounted to a first exhaust line of the first pump system; a fifth gas analysis device mounted to a third wall of the loading chamber; or a sixth gas analysis device mounted to a second exhaust line of the second pump system.

[0102] In some embodiments, at least one of the first, second, third, fourth, fifth or sixth gas analysis devices comprises a residual gas analyzer.

[0103] In some embodiments, at least one of the first gas analysis device or the second gas analysis device is operable to detect a level of gas associated with outgassing of contaminants in the column.

[0104] In some embodiments, at least one of the first, second, third, fourth, fifth or sixth gas analysis devices is operable to detect a level of external ambient gas associated with a leak in the column, the process chamber or the load chamber.

[0105] In some embodiments, at least one of the third or fourth gas analysis devices is operable to detect a level of impurities in a process gas supplied to the process chamber.

[0106] In some embodiments, at least one of the third gas analysis device or the fourth gas analysis device is operable to detect the extent of reaction byproducts generated by electron beam induced deposition (EBID) or electron beam induced etching (EBIE) performed on a semiconductor wafer located in the processing chamber.

[0107] The features of several embodiments are summarized above so that those skilled in the art can better understand the aspects of the present disclosure. Those skilled in the art should understand that they can easily use the present disclosure as a basis for designing or modifying other processes and structures to implement the same purposes and / or achieve the same advantages as the embodiments described herein. Those skilled in the art should also recognize that these equivalent constructions do not depart from the spirit and scope of the present disclosure, and they can make various changes, substitutions and modifications to the present disclosure without departing from the spirit and scope of the present disclosure.

Claims

1. A method for repairing a mask, characterized in that: include: positioning the mask in a process chamber of a mask repair apparatus; determining, through a first gas analysis device, whether a first anomaly exists during the formation of a first vacuum in a column above the processing chamber; determining, by a second gas analysis device, whether a second abnormality exists during the formation of a second vacuum in the processing chamber; determining, by a third gas analysis device, whether a third abnormality exists during the process gas flowing into the process chamber; determining, by a fourth gas analysis device, whether a fourth abnormality exists during the process of irradiating an electron beam or an ion beam to a mask using the process gas in the process chamber; and In response to determining that one of the first, second, third or fourth anomalies exists: stopping directing the electron beam or ion beam toward the mask; as well as A repair associated with the presence of the first, second, third or fourth anomaly is performed.

2. The method according to claim 1, characterized in that: Determining whether the first abnormality exists includes: Determining whether there is outgassing of contaminants in the column; or Determine whether there is a leak in the column.

3. The method according to claim 1, characterized in that Determining whether the second abnormality exists includes: exhausting the gaseous medium in the processing chamber through a pump system; and The gas medium is analyzed through the second gas analysis device.

4. The method according to claim 1, characterized in that Determining whether the third abnormality exists includes: It is determined whether the level of impurities present in the process gas is greater than a threshold value.

5. The method according to claim 1, characterized in that Determining whether the fourth abnormality exists includes: It is determined whether a reaction byproduct exists in a gaseous medium exhausted from the process chamber at a level greater than a threshold.

6. A method for repairing a mask, characterized in that: include: The repair mask is formed by a mask repair device including an electron beam source or an ion beam source, wherein the forming includes: detecting at least one anomaly via a gas analysis device mounted to at least one of a column, a process chamber, or a load chamber of the mask repair apparatus; Placing the repair mask in a lithography device; positioning a semiconductor wafer in the lithography apparatus; and The mask layer of the semiconductor wafer is patterned based on the pattern of the repair mask.

7. The method according to claim 6, characterized in that Forming the repair mask includes: performing electron beam induced deposition (EBID) on the mask; and The level of particulate byproducts generated by EBID is monitored by the gas analysis device.

8. The method according to claim 6, characterized in that Forming the repair mask includes: performing electron beam induced etching (EBIE) on the mask; and The level of particulate byproducts generated by EBIE is monitored by the gas analysis device.

9. A mask repair device, characterized in that: include: A processing chamber having a mask platform; a column above the processing chamber, wherein the column has a beam source; a loading chamber, adjacent to the processing chamber; a first pump system connected to the process chamber; a second pump system connected to the loading chamber; an ion getter pump connected to the column; and At least one of: a first gas analysis device mounted to a first transfer line of the ion getter pump; a second gas analysis device mounted to the first wall of the column; a third gas analysis device mounted to the second wall of the processing chamber; a fourth gas analysis device mounted to the first exhaust line of the first pump system; a fifth gas analysis device mounted to the third wall of the loading chamber; or A sixth gas analysis device is installed to the second exhaust line of the second pump system.

10. The mask repairing device according to claim 9, characterized in that: At least one of the first, second, third, fourth, fifth or sixth gas analysis devices comprises a residual gas analyzer.

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