Diamond microwave and millimeter wave power resistor

Abstract

The invention discloses a diamond microwave and millimeter wave power resistor. The diamond microwave and millimeter wave power resistor comprises the following technological processes: 1) manufacturing and preparing a substrate with a standard thickness; 2) polishing and grinding the substrate; (3) cleaning; 4) designing a graph; (5) manufacturing a mask plate; (6) laser grooving / punching is carried out; (7) cleaning; (8) bottom metal 1000 angstrom nickel / titanium tungsten is subjected to magnetron sputtering; (9) cleaning; (10) designing a mask plate; and 11) sputtering a TaN thin film. Compared with BeO and ceramic chip products of the same type, the power of the BeO and ceramic chip products is improved from 2W to 125W, and the frequency is expanded from DC-6GHz to DC-40GHz. The heat dissipation performance is extremely good, the size is reduced to one fifth or even smaller than that of similar products, and the antenna is very convenient to integrate in various radio frequency microwave products, military products, aerospace products and the like; and the size and the heat dissipation characteristic are improved, so that the requirements on heat dissipation, power supply and the like are reduced in system design and application, the system performance is improved, and the energy consumption is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of fourth-generation semiconductor microwave millimeter wave new materials, in particular to diamond microwave millimeter wave power resistors. Background Art

[0002] The research of foreign RF microwave millimeter wave resistors is mainly concentrated in the United States. The high-frequency resistors designed by the research have tended to be miniaturized, with an operating frequency of DC-26.5GHz and an average carrying power of 20W. At present, foreign EMC companies have developed high-frequency miniaturized power resistors, whose power continuous wave can reach more than 50W, and the volume is equivalent to the size of 0402 and 0603 resistors. The current status of domestic microwave millimeter wave power resistors is generally concentrated on microwave resistors below 2W, which generally use ceramic materials such as alumina and glass oxide, and have different sizes. At present, they are mainly used in self-made modules, and have not yet formed productization, serialization, and miniaturization.

[0003] A comprehensive reference to the current status of thin film microwave resistors at home and abroad shows that there are relatively mature products abroad, while many domestic high-frequency thin film power resistors are still in the experimental stage, especially in the RF microwave millimeter wave range. In addition, analysis of the carrying power of thin film matching loads at home and abroad found that under the condition of small-size structure, the carrying power of resistors in the microwave millimeter wave frequency band is relatively low and expensive, which does not meet the requirements of some domestic high-power microwave resistors. Domestic small-size thin film resistors are currently basically at the level of 2W and below. Combining the methods of designing high-power microwave thin film resistors at home and abroad, there is still a lack of a simple and effective method to quickly obtain the model structure diagram of high-power microwave thin film resistors.

[0004] Therefore, a simple and effective method for designing microwave high-power thin film resistors is studied, and a series of microwave millimeter-wave thin film resistors with high frequency and large load power are designed, which have significant economic value and can also break the monopoly of foreign countries on matching loads in the RF microwave field. Summary of the invention

[0005] 1. Technical issues to be resolved In view of the deficiencies in the prior art, the present invention provides a diamond microwave millimeter wave power resistor, which has the advantages of small size, improved system performance, reduced energy consumption, etc., and solves the problems existing in the above-mentioned background technology.

[0006] (II) Technical solution To achieve the above object, the present invention provides the following technical solution: Diamond microwave millimeter wave power resistor, including the following process flow: 1) Manufacture and preparation of substrates of standard thickness; 2) Substrate polishing and grinding; 3) Cleaning; 4) Design graphics; 5) Mask plate manufacturing; 6) Laser grooving / punching; 7) Cleaning; 8) Magnetron sputtering of bottom metal 1000 angstroms of nickel / titanium tungsten; 9) Cleaning; 10) Design the mask plate; 11) Sputtering TaN film; 12) Photolithography; 13) Design the mask; 14) Sputtering Au film; 15) Photolithography; 16) Design the mask plate; 17) Sputtering to thicken the Au layer; 18) Etching adjustment; 19) Cleaning; 20) Testing; 21) Packaging.

[0007] Preferably, the substrate in step 1) is a diamond wafer with a thickness of 50-200 microns, and the substrate in step 2) is double-sided polished to a surface roughness of less than 0.5 nm to optimize RF loss and heat dissipation performance.

[0008] Preferably, the bottom metal layer magnetron sputtered in step 8) is a nickel / titanium-tungsten alloy layer with a thickness of 800-1200 angstroms, and is cleaned by argon plasma after sputtering to enhance film adhesion.

[0009] Preferably, the thickness of the TaN film in step 11) is 50-200 angstroms, and the resistance value error is controlled within ±5% by the laser photolithography resistance trimming technology in step 18).

[0010] Preferably, the thickness of the thickened Au layer in step 17) is 1-3 microns, covering the back electrode and matching electrode areas, and an edge gradient thickening structure is achieved by electrochemical deposition.

[0011] Preferably, the test in step 20) includes a standing wave ratio test (VSWR<1.5) in the DC to 40 GHz frequency band and a pulse power capacity test (continuous wave power>10W@25°C).

[0012] Preferably, after step 19), vacuum annealing is performed, the annealing temperature is 450-550°C, the holding time is 30-60 minutes, and the vacuum degree of the annealing environment is ≤1×10⁻³Pa.

[0013] The above technical solution is adopted: for the first time, high-quality diamond semiconductor materials are creatively combined with microwave thin film technology and applied to the field of microwave millimeter wave power resistors, and made into patch type and chip type to achieve miniaturization, serialization and high power effects, expanding the frequency range and power range, and providing high-frequency power resistors for radar, satellite communications, 5G / 6G communications and miniaturization of measurement systems.

[0014] Surface mount (DR) chip resistors have extremely high power ratings and can be used in applications from DC to 30GHz and higher frequencies, and are ideal for military and aerospace applications due to their high power capabilities, wide frequency response, and small, lightweight size. They are manufactured with an all-thin film structure and have a thin film gold-plated surface material that can be wire bonded or soldered. Because of their all-thin film structure, they are ideal for peak power applications.

[0015] Through meticulous design, strict simulation and improved process realization, a miniaturized power diamond microwave load is formed. According to the optimized device structure size, product characteristics and diamond characteristics, laser processing technology is first used to pre-process grooves and holes on the diamond wafer, and then magnetron sputtering technology is used to first make the bottom metal, back electrode and matching electrode on the double-sided polished diamond sheet, and then RF magnetron sputtering and mask patterning technology are used to prepare TaN film, and laser photolithography resistance adjustment technology is performed according to actual needs. After the coating is completed, the resistor is vacuum annealed at a temperature of 500 degrees Celsius to eliminate defects in the film and improve the stability of the device. Finally, 50 ohm, 100 ohm and required resistors are made.

[0016] Diamond is currently the best thermal conductor in the world. The present invention utilizes the high heat dissipation coefficient and low dielectric constant of diamond as an excellent RF microwave dielectric material substrate, as well as advanced thin film technology combining diamond semiconductor materials and other materials to achieve such performance indicators.

[0017] Adopting the above technical solution: This series of products mainly include diamond microwave millimeter wave power resistors of various sizes. Its originality lies in the use of diamond wafers as substrate materials to design and manufacture DC-40GHz microwave millimeter wave power resistors. Diamond materials are used for the first time to design and manufacture microwave millimeter power resistors. Nickel / titanium tungsten alloy is used as the base material in the thin film process, which increases the stability of the product and the reliability of the process.

[0018] Preferably, compared with similar BeO and ceramic products, the power is increased from 2W to 125W, and the frequency is extended from DC-6GHz to DC-40GHz. Moreover, the invention has excellent heat dissipation, which reduces the size to one-fifth of similar products, or even smaller, and is very convenient for integration into various radio frequency microwave products, as well as military, aerospace and other products; and due to the improvement of its volume and heat dissipation characteristics, the requirements for heat dissipation and power supply are reduced in system design and application, so that system performance is improved and energy consumption is reduced.

[0019] (III) Beneficial effects Compared with the prior art, the present invention provides a diamond microwave millimeter wave power resistor, which has the following beneficial effects: Compared with similar BeO and ceramic products, the power of this diamond microwave millimeter wave power resistor is increased from 2W to 125W, and the frequency is extended from DC-6GHz to DC-40GHz. Moreover, this invention has excellent heat dissipation, which reduces the size to one-fifth of similar products, or even smaller, making it very easy to integrate into various RF microwave products, as well as military and aerospace products; and due to the improvement of its volume and heat dissipation characteristics, the requirements for heat dissipation and power supply are reduced in system design and application, so that system performance is improved and energy consumption is reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 This is a process flow chart of the diamond microwave millimeter wave power resistor proposed by the present invention; Figure 2 This is a finished product diagram of Example 1 of the present invention; Figure 3 This is a finished product diagram of Example 2 of the present invention. DETAILED DESCRIPTION

[0021] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0022] See also Figure 1-3 , diamond microwave millimeter wave power resistor, including the following process flow: 1) Manufacture and preparation of substrates of standard thickness; 2) Substrate polishing and grinding; 3) Cleaning; 4) Design graphics; 5) Mask plate manufacturing; 6) Laser grooving / punching; 7) Cleaning; 8) Magnetron sputtering of bottom metal 1000 angstroms of nickel / titanium tungsten; 9) Cleaning; 10) Design the mask plate; 11) Sputtering TaN film; 12) Photolithography; 13) Design the mask; 14) Sputtering Au film; 15) Photolithography; 16) Design the mask plate; 17) Sputtering to thicken the Au layer; 18) Etching adjustment; 19) Cleaning; 20) Testing; 21) Packaging.

[0023] The substrate in step 1) is a diamond wafer with a thickness of 50-200 microns, and the substrate in step 2) is double-sided polished to a surface roughness of less than 0.5 nm to optimize radio frequency loss and heat dissipation performance.

[0024] The bottom metal of magnetron sputtering in step 8) is a nickel / titanium-tungsten alloy layer with a thickness of 800-1200 angstroms, and after sputtering, it is cleaned by argon plasma to enhance the film adhesion.

[0025] The thickness of the TaN film in step 11) is 50-200 angstroms, and the resistance value error is controlled within ±5% by the laser photolithography resistance trimming technology in step 18).

[0026] In step 17), the thickness of the thickened Au layer is 1-3 microns, covering the back electrode and matching electrode areas, and an edge gradient thickening structure is achieved by electrochemical deposition.

[0027] The tests in step 20) include standing wave ratio test (VSWR < 1.5) in the DC to 40 GHz frequency band and pulse power capacity test (continuous wave power > 10W@25°C).

[0028] Step 19) is followed by vacuum annealing treatment, the annealing temperature is 450-550°C, the holding time is 30-60 minutes, and the vacuum degree of the annealing environment is ≤1×10⁻³Pa.

[0029] Example 1: For the first time, high-quality diamond semiconductor materials and microwave thin film technology are creatively combined and applied to the field of microwave and millimeter wave power resistors. They are made into patch and chip types to achieve miniaturization, serialization, and high power effects, expanding the frequency range and power range, and providing high-frequency power resistors for radar, satellite communications, 5G / 6G communications, and miniaturization of measurement systems.

[0030] Surface mount (DR) chip resistors have extremely high power ratings and can be used in applications from DC to 30GHz and higher frequencies, and are ideal for military and aerospace applications due to their high power capabilities, wide frequency response, and small, lightweight size. They are manufactured with an all-thin film structure and have a thin film gold-plated surface material that can be wire bonded or soldered. Because of their all-thin film structure, they are ideal for peak power applications.

[0031] Through meticulous design, strict simulation and improved process realization, a miniaturized power diamond microwave load is formed. According to the optimized device structure size, product characteristics and diamond characteristics, laser processing technology is first used to pre-process grooves and holes on the diamond wafer, and then magnetron sputtering technology is used to first make the bottom metal, back electrode and matching electrode on the double-sided polished diamond sheet, and then RF magnetron sputtering and mask patterning technology are used to prepare TaN film, and laser photolithography resistance adjustment technology is performed according to actual needs. After the coating is completed, the resistor is vacuum annealed at a temperature of 500 degrees Celsius to eliminate defects in the film and improve the stability of the device. Finally, 50 ohm, 100 ohm and required resistors are made.

[0032] Diamond is currently the best thermal conductor in the world. The present invention utilizes the high heat dissipation coefficient and low dielectric constant of diamond as an excellent RF microwave dielectric material substrate, as well as advanced thin film technology combining diamond semiconductor materials and other materials to achieve such performance indicators.

[0033] This series of products mainly include diamond microwave millimeter wave power resistors of various sizes. Its originality lies in the use of diamond wafers as substrate materials to design and manufacture DC-40GHz microwave millimeter wave power resistors. Diamond materials are used for the first time to design and manufacture microwave millimeter power resistors. Nickel / titanium tungsten alloy is used as the base material in the thin film process, which increases the stability of the product and the reliability of the process.

[0034] Embodiment 2: The prepared objects: Diamond microwave millimeter wave power resistor 1 (substrate 0.381 / 0.254mm), as shown in the attached Figure 2 shown.

[0035] The prepared objects: Diamond microwave millimeter wave power resistor 2 (substrate 0.381 / 0.254mm), as shown in the attached Figure 3 shown.

[0036] In summary, compared with similar BeO and ceramic products, the power of the diamond microwave millimeter wave power resistor is increased from 2W to 125W, and the frequency is extended from DC-6GHz to DC-40GHz. Moreover, this invention has excellent heat dissipation, which reduces the size to one-fifth of similar products, or even smaller, making it very easy to integrate into various RF microwave products, as well as military, aerospace and other products; and due to the improvement of its volume and heat dissipation characteristics, the requirements for heat dissipation and power supply are reduced in system design and application, so that system performance is improved and energy consumption is reduced.

[0037] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "comprise one" do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0038] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. Diamond microwave millimeter wave power resistor, characterized in that: Including the following process: 1) Manufacture and preparation of substrates of standard thickness; 2) Substrate polishing and grinding; 3) Cleaning; 4) Design graphics; 5) Mask plate manufacturing; 6) Laser grooving / punching; 7) Cleaning; 8) Magnetron sputtering of bottom metal 1000 angstroms of nickel / titanium tungsten; 9) Cleaning; 10) Design the mask plate; 11) Sputtering TaN film; 12) Photolithography; 13) Design the mask; 14) Sputtering Au film; 15) Photolithography; 16) Design the mask; 17) Sputtering to thicken the Au layer; 18) Etching adjustment; 19) Cleaning; 20) Testing; 21) Packaging.

2. The diamond microwave millimeter wave power resistor according to claim 1, characterized in that: The substrate in step 1) is a diamond wafer with a thickness of 50-200 microns, and the substrate in step 2) is double-sided polished to a surface roughness of less than 0.5 nm to optimize radio frequency loss and heat dissipation performance.

3. The diamond microwave millimeter wave power resistor according to claim 1, characterized in that: The bottom metal layer magnetron sputtered in step 8) is a nickel / titanium-tungsten alloy layer with a thickness of 800-1200 angstroms, and is cleaned by argon plasma after sputtering to enhance film adhesion.

4. The diamond microwave millimeter wave power resistor according to claim 1, characterized in that: The thickness of the TaN film in step 11) is 50-200 angstroms, and the resistance value error is controlled within ±5% by the laser photolithography resistance trimming technology in step 18).

5. The diamond microwave millimeter wave power resistor according to claim 1, characterized in that: The thickness of the thickened Au layer in step 17) is 1-3 microns, covering the back electrode and matching electrode areas, and an edge gradient thickening structure is achieved by electrochemical deposition.

6. The diamond microwave millimeter wave power resistor according to claim 1, characterized in that: The test in step 20) includes a standing wave ratio test (VSWR<1.5) in the DC to 40 GHz frequency band and a pulse power capacity test (continuous wave power>10W@25°C).

7. The diamond microwave millimeter wave power resistor according to claim 1, characterized in that: After step 19), vacuum annealing is performed, the annealing temperature is 450-550°C, the holding time is 30-60 minutes, and the vacuum degree of the annealing environment is ≤1×10⁻³Pa.

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