III-V group semiconductor green laser chip element

Abstract

The invention discloses an III-V group semiconductor green laser chip element which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and a magnetic tunnel junction layer is arranged between the upper waveguide layer and the upper limiting layer. The magnetic tunnel junction layer includes a first magnetic tunnel junction layer, a second magnetic tunnel junction layer, and a third magnetic tunnel junction layer. Through specific structure composition, specific saturated electron drift rate distribution and specific thermal expansion coefficient distribution, an orthogonal structure is formed to regulate and control magnetization intensity relative orientation, interface spin polarization tunneling current is enhanced, net longitudinal spin polarization tunneling current is driven by an electric field to be transported in a cluster magnetic octupole polarization direction, the transport efficiency of electrons and holes is improved, and the efficiency of the cluster magnetic field is improved. And the lasing uniformity and the gain uniformity are improved.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a III-V semiconductor green laser chip component. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes.

[0004] 1) Laser is generated by stimulated radiation of carriers, the spectrum half-width is small, the brightness is very high, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneously radiated, and the output power of a single light-emitting diode is in the mW level;

[0005] 2) The current density of the laser is up to KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in the energy level of the electron transition, producing the same coherent light as the photon and the induced photon;

[0007] 4) Different principles: When an external voltage is applied to a light-emitting diode, electron holes jump to a quantum well or a pn junction to generate radiative recombination light, while a laser can only emit when the lasing conditions are met. The carrier distribution in the active region must be reversed, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor lasers have the following problems:

[0009] 1) The large internal lattice mismatch and strain cause strong polarization effect, and the QCSE quantum confined Stark effect strongly limits the improvement of the laser lasing gain;

[0010] 2) The activation energy of the Mg acceptor of the p-type semiconductor is large, the ionization efficiency is low, the hole concentration is much lower than the electron concentration, the hole mobility is much lower than the electron mobility, and the quantum well polarization electric field increases the hole injection barrier, the holes overflow the active layer, and other problems. The hole injection is uneven and the efficiency is low, resulting in serious asymmetric mismatch between electrons and holes in the quantum well, electron leakage and carrier delocalization, more difficult hole transport in the quantum well, uneven carrier injection, uneven gain, and at the same time, the laser gain spectrum becomes wider and the peak gain decreases, resulting in an increase in the laser threshold current and a decrease in slope efficiency;

[0011] 3) The step difference of the laser valence band increases, the hole transport in the quantum well becomes more difficult, the carrier injection is uneven, and the gain is uneven. Summary of the invention

[0012] The present invention proposes a III-V semiconductor green laser chip element, which forms an orthogonal structure through specific structural composition, specific saturated electron drift velocity distribution, and specific thermal expansion coefficient distribution to regulate the relative orientation of magnetization intensity, enhance the interface spin polarized tunneling current, and drive the net longitudinal spin polarized tunneling current to be transported along the cluster magnetic octupole polarization direction by an electric field, thereby improving the transport efficiency of electrons and holes, and improving the lasing uniformity and gain uniformity.

[0013] The present invention provides a III-V semiconductor green laser chip element, which comprises, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper limiting layer. A magnetic tunnel junction layer is provided between the upper waveguide layer and the upper limiting layer. The magnetic tunnel junction layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond, Y 2 NiMnO 6 SnO 2 、Mo 6 V 9 O 40 、NaMnO 2 :Ti、LaAlO 3 , KTaO 3 Any one or any combination of; the magnetic tunnel junction layer includes a first magnetic tunnel junction layer, a second magnetic tunnel junction layer and a third magnetic tunnel junction layer.

[0014] Preferably, the saturated electron drift velocity distribution of the first magnetic tunnel junction layer has a function y=A+B*x+C*sinx curve distribution; the saturated electron drift velocity distribution of the second magnetic tunnel junction layer has a function y=D*E*e x / x first quadrant curve distribution; the saturated electron drift rate distribution of the third magnetic tunnel junction layer has the function y=F+G*x / lnx first quadrant curve distribution; the saturated electron drift rate of the first magnetic tunnel junction layer is d, the saturated electron drift rate of the second magnetic tunnel junction layer is e, and the saturated electron drift rate of the third magnetic tunnel junction layer is f, wherein: 5E6<e<f<d<5E9 (cm / s).

[0015] Preferably, the thermal expansion coefficient distribution of the first magnetic tunnel junction layer has a function y=H+I*cotx curve distribution; the thermal expansion coefficient distribution of the second magnetic tunnel junction layer has a function y=J+K*lnx-x curve distribution; the thermal expansion coefficient distribution of the third magnetic tunnel junction layer has a function y=L+M*x / lnx first quadrant curve distribution; the thermal expansion coefficient of the first magnetic tunnel junction layer is g, the thermal expansion coefficient of the second magnetic tunnel junction layer is h, and the thermal expansion coefficient of the third magnetic tunnel junction layer is i, wherein: 1<g<i<h<

[0016] 15(10 -6 / K).

[0017] Preferably, the dielectric constant distribution of the first magnetic tunnel junction layer has a function y=N+P*x+Q*cosx curve distribution; the dielectric constant distribution of the second magnetic tunnel junction layer has a function y=R+S*e x -T*x curve distribution; the dielectric constant distribution of the third magnetic tunnel junction layer has a function y=U+V*lnx-W*x curve distribution; the dielectric constant of the first magnetic tunnel junction layer is j, the dielectric constant of the second magnetic tunnel junction layer is k, and the dielectric constant of the third magnetic tunnel junction layer is l, wherein: 2<k<l<j<20.

[0018] Preferably, the refractive index coefficient distribution of the first magnetic tunnel junction layer has a function y=Z+A2*e x lnx curve distribution; the refractive index coefficient distribution of the second magnetic tunnel junction layer has a function y=B2+C2*x 2 +D2*e x Curve distribution; the refractive index coefficient distribution of the third magnetic tunnel junction layer has a function y=E2+F2*e x -G2*cosx second three-quadrant curve distribution; the refractive index coefficient of the first magnetic tunnel junction layer is m, the refractive index coefficient of the second magnetic tunnel junction layer is n, and the refractive index coefficient of the third magnetic tunnel junction layer is p, wherein: 1<n<p<m<10.

[0019] Preferably, the lattice constant distribution of the first magnetic tunnel junction layer has a function y=H2+I2*e x -J2*e -x Curve distribution; the lattice constant distribution of the second magnetic tunnel junction layer has a first quadrant curve distribution of function y=K2*L2*x+1 / 2x; the lattice constant distribution of the third magnetic tunnel junction layer has a third quadrant curve distribution of function y=M2+N2*x+1 / 2x; the lattice constant of the first magnetic tunnel junction layer is q, the lattice constant of the second magnetic tunnel junction layer is r, and the lattice constant of the third magnetic tunnel junction layer is s, wherein: 2<r<s<q<20.

[0020] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, any one or any combination thereof, with a thickness of 10 to 100 angstroms, and a barrier layer of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, any one or any combination thereof, with a thickness of 10 to 200 angstroms.

[0021] Preferably, the lower limiting layer, the lower waveguide layer, the upper waveguide layer, and the upper limiting layer are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN or any combination thereof.

[0022] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO 2 Composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO 2 / SiN x Composite substrate, magnesium aluminum spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 and LiGaO 2 Any type of composite substrate.

[0023] Compared with the prior art, the III-V semiconductor green laser chip component provided by the embodiment of the present invention has the following beneficial effects:

[0024] The magnetic tunnel junction layer forms an orthogonal structure through a specific structural composition, a specific saturated electron drift rate distribution, and a specific thermal expansion coefficient distribution to regulate the relative orientation of the magnetization intensity, enhance the interface spin polarized tunneling current, and drive the net longitudinal spin polarized tunneling current to be transported along the cluster magnetic octupole polarization direction by the electric field, thereby improving the transport efficiency of electrons and holes, and improving the lasing uniformity and gain uniformity.

[0025] The magnetic tunnel junction layer generates a strong coupling effect of magnetic order and charge transfer in the active layer region through a specific dielectric constant, a specific refractive index coefficient distribution, and a specific lattice constant distribution, regulates the direction of the electric field and magnetic field of the active layer, offsets the polarization field of the active layer, reduces the quantum confinement Stark effect, slows down the inclination of the active layer energy band, reduces the hole injection barrier, reduces the valence band order of the laser, inhibits the Pauli blockage of holes, reduces the repulsive effect between bound hole pairs, improves the hole injection efficiency, improves the carrier injection uniformity of the laser element, and improves the optical power and slope efficiency of the laser element. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 The present invention provides a schematic structural diagram of a III-V semiconductor green laser chip component.

[0027] Figure 2 The present invention provides a SIMS secondary ion mass spectrum of a III-V semiconductor green laser chip component.

[0028] Markings in the figure: 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer; 105: upper confinement layer; 106: magnetic tunnel junction layer; 106a: first magnetic tunnel junction layer; 106b: second magnetic tunnel junction layer; 106c: third magnetic tunnel junction layer. DETAILED DESCRIPTION

[0029] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0030] In order to solve the above problems, a III-V semiconductor green laser chip element provided in the embodiment of the present application will be introduced and explained in detail through the following specific embodiments.

[0031] Reference Figure 1-2 The present invention provides a III-V semiconductor green laser chip element, which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105. A magnetic tunnel junction layer 106 is provided between the upper waveguide layer 104 and the upper confinement layer 105. The magnetic tunnel junction layer 106 is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond, Y 2 NiMnO 6 SnO 2 、Mo 6 V 9 O40 、NaMnO 2 :Ti、LaAlO 3 , KTaO 3 Any one or any combination of; the magnetic tunnel junction layer 106 includes a first magnetic tunnel junction layer 106a, a second magnetic tunnel junction layer 106b and a third magnetic tunnel junction layer 106c.

[0032] The saturated electron drift velocity distribution of the first magnetic tunnel junction layer 106a has a function y=A+B*x+C*sinx curve distribution; the saturated electron drift velocity distribution of the second magnetic tunnel junction layer 106b has a function y=D*E*e x / x first quadrant curve distribution; the saturated electron drift velocity distribution of the third magnetic tunnel junction layer 106c has a first quadrant curve distribution of function y=F+G*x / lnx; the saturated electron drift velocity of the first magnetic tunnel junction layer 106a is d, the saturated electron drift velocity of the second magnetic tunnel junction layer 106b is e, and the saturated electron drift velocity of the third magnetic tunnel junction layer 106c is f, wherein: 5E6<e<f<d<5E9 (cm / s). The thermal expansion coefficient distribution of the first magnetic tunnel junction layer 106a has a function y=H+I*cotx curve distribution; the thermal expansion coefficient distribution of the second magnetic tunnel junction layer 106b has a function y=J+K*lnx-x curve distribution; the thermal expansion coefficient distribution of the third magnetic tunnel junction layer 106c has a function y=L+M*x / lnx first quadrant curve distribution; the thermal expansion coefficient of the first magnetic tunnel junction layer 106a is g, the thermal expansion coefficient of the second magnetic tunnel junction layer 106b is h, and the thermal expansion coefficient of the third magnetic tunnel junction layer 106c is i, wherein: 1<g<i<h<15(10 -6 / K).

[0033] The magnetic tunnel junction layer forms an orthogonal structure through a specific structural composition, a specific saturated electron drift rate distribution, and a specific thermal expansion coefficient distribution to regulate the relative orientation of the magnetization intensity, enhance the interface spin polarized tunneling current, and drive the net longitudinal spin polarized tunneling current to be transported along the cluster magnetic octupole polarization direction by the electric field, thereby improving the transport efficiency of electrons and holes, and improving the lasing uniformity and gain uniformity.

[0034] The dielectric constant distribution of the first magnetic tunnel junction layer 106a has a function y=N+P*x+Q*cosx curve distribution; the dielectric constant distribution of the second magnetic tunnel junction layer 106b has a function y=R+S*e x-T*x curve distribution; the dielectric constant distribution of the third magnetic tunnel junction layer 106c has a function y=U+V*lnx-W*x curve distribution; the dielectric constant of the first magnetic tunnel junction layer 106a is j, the dielectric constant of the second magnetic tunnel junction layer 106b is k, and the dielectric constant of the third magnetic tunnel junction layer 106c is l, wherein: 2<k<l<j<20. The refractive index coefficient distribution of the first magnetic tunnel junction layer 106a has a function y=Z+A2*e x lnx curve distribution; the refractive index coefficient distribution of the second magnetic tunnel junction layer 106b has a function y=B2+C2*x 2 +D2*e x Curve distribution; the refractive index coefficient distribution of the third magnetic tunnel junction layer 106c has a function y=E2+F2*e x -G2*cosx second three-quadrant curve distribution; the refractive index coefficient of the first magnetic tunnel junction layer 106a is m, the refractive index coefficient of the second magnetic tunnel junction layer 106b is n, and the refractive index coefficient of the third magnetic tunnel junction layer 106c is p, wherein: 1<n<p<m<10.

[0035] The lattice constant distribution of the first magnetic tunnel junction layer 106a has a function y=H2+I2*e x -J2*e -x Curve distribution; the lattice constant distribution of the second magnetic tunnel junction layer 106b has a first quadrant curve distribution of function y=K2*L2*x+1 / 2x; the lattice constant distribution of the third magnetic tunnel junction layer 106c has a third quadrant curve distribution of function y=M2+N2*x+1 / 2x; the lattice constant of the first magnetic tunnel junction layer 106a is q, the lattice constant of the second magnetic tunnel junction layer 106b is r, and the lattice constant of the third magnetic tunnel junction layer 106c is s, wherein: 2<r<s<q<20.

[0036] The magnetic tunnel junction layer generates a strong coupling effect of magnetic order and charge transfer in the active layer region through a specific dielectric constant, a specific refractive index coefficient distribution, and a specific lattice constant distribution, regulates the direction of the electric field and magnetic field of the active layer, offsets the polarization field of the active layer, reduces the quantum confinement Stark effect, slows down the inclination of the active layer energy band, reduces the hole injection barrier, reduces the valence band order of the laser, inhibits the Pauli blockage of holes, reduces the repulsive effect between bound hole pairs, improves the hole injection efficiency, improves the carrier injection uniformity of the laser element, and improves the optical power and slope efficiency of the laser element.

[0037] The specific data are shown in the following table, which compares the data of the traditional laser and the laser of the present invention.

[0038] Blue Laser Project Conventional laser Laser of the present invention Range of change Slope efficiency (W / A) 0.8 1.67 109％ <![CDATA[Threshold current density (kA / cm 2 )]]> 2.4 0.63 -74％ Optical power(W) 4.1 11.3 176％

[0039] In the present invention, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, any one or any combination thereof, with a thickness of 10 to 100 angstroms, and a barrier layer of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, any one or any combination thereof, with a thickness of 10 to 200 angstroms.

[0040] In the present invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN or any combination thereof.

[0041] In the present invention, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO 2 Composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO 2 / SiN x Composite substrate, magnesium aluminum spinel MgAl 2 O4 、MgO、ZnO、ZrB 2 、LiAlO 2 and LiGaO 2 Any type of composite substrate.

[0042] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A III-V semiconductor green laser chip component, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that: A magnetic tunnel junction layer (106) is provided between the upper waveguide layer (104) and the upper confinement layer (105), and the magnetic tunnel junction layer (106) is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, Y2NiMnO6, SnO2, Mo6V9O 40 , NaMnO2:Ti, LaAlO3, KTaO3 or any combination thereof; the magnetic tunnel junction layer (106) comprises a first magnetic tunnel junction layer (106a), a second magnetic tunnel junction layer (106b) and a third magnetic tunnel junction layer (106c).

2. A III-V semiconductor green laser chip component according to claim 1, characterized in that: The saturated electron drift velocity distribution of the first magnetic tunnel junction layer (106a) has a function y=A+B*x+C*sinx curve distribution; the saturated electron drift velocity distribution of the second magnetic tunnel junction layer (106b) has a function y=D*E*e x / x first quadrant curve distribution; the saturated electron drift velocity distribution of the third magnetic tunnel junction layer (106c) has a function y=F+G*x / lnx first quadrant curve distribution; the saturated electron drift velocity of the first magnetic tunnel junction layer (106a) is d, the saturated electron drift velocity of the second magnetic tunnel junction layer (106b) is e, and the saturated electron drift velocity of the third magnetic tunnel junction layer (106c) is f, wherein: 5E6<e<f<d<5E9 (cm / s).

3. A III-V semiconductor green laser chip component as claimed in claim 1, characterized in that: The thermal expansion coefficient distribution of the first magnetic tunnel junction layer (106a) has a function y=H+I*cotx curve distribution; the thermal expansion coefficient distribution of the second magnetic tunnel junction layer (106b) has a function y=J+K*lnx-x curve distribution; the thermal expansion coefficient distribution of the third magnetic tunnel junction layer (106c) has a function y=L+M*x / lnx first quadrant curve distribution; the thermal expansion coefficient of the first magnetic tunnel junction layer (106a) is g, the thermal expansion coefficient of the second magnetic tunnel junction layer (106b) is h, and the thermal expansion coefficient of the third magnetic tunnel junction layer (106c) is i, wherein: 1<g<i<h<15(10 -6 / K).

4. A III-V semiconductor green laser chip component as claimed in claim 1, characterized in that: The dielectric constant distribution of the first magnetic tunnel junction layer (106a) has a function y=N+P*x+Q*cosx curve distribution; the dielectric constant distribution of the second magnetic tunnel junction layer (106b) has a function y=R+S*e x -T*x curve distribution; the dielectric constant distribution of the third magnetic tunnel junction layer (106c) has a function y=U+V*lnx-W*x curve distribution; the dielectric constant of the first magnetic tunnel junction layer (106a) is j, the dielectric constant of the second magnetic tunnel junction layer (106b) is k, and the dielectric constant of the third magnetic tunnel junction layer (106c) is l, wherein: 2<k<l<j<20.

5. A III-V semiconductor green laser chip component as claimed in claim 1, characterized in that: The refractive index distribution of the first magnetic tunnel junction layer (106a) has a function y=Z+A2*e x lnx curve distribution; the refractive index coefficient distribution of the second magnetic tunnel junction layer (106b) has a function y=B2+C2*x 2 +D2*e x Curve distribution; the refractive index coefficient distribution of the third magnetic tunnel junction layer (106c) has a function y=E2+F2*e x -G2*cosx second three-quadrant curve distribution; the refractive index coefficient of the first magnetic tunnel junction layer (106a) is m, the refractive index coefficient of the second magnetic tunnel junction layer (106b) is n, and the refractive index coefficient of the third magnetic tunnel junction layer (106c) is p, wherein: 1<n<p<m<10.

6. A III-V semiconductor green laser chip component as claimed in claim 1, characterized in that: The lattice constant distribution of the first magnetic tunnel junction layer (106a) has a function y=H2+I2*e x -J2*e -x Curve distribution; the lattice constant distribution of the second magnetic tunnel junction layer (106b) has a first quadrant curve distribution of the function y=K2*L2*x+1 / 2x; the lattice constant distribution of the third magnetic tunnel junction layer (106c) has a third quadrant curve distribution of the function y=M2+N2*x+1 / 2x; the lattice constant of the first magnetic tunnel junction layer (106a) is q, the lattice constant of the second magnetic tunnel junction layer (106b) is r, and the lattice constant of the third magnetic tunnel junction layer (106c) is s, wherein: 2<r<s<q<20.

7. The III-V semiconductor green laser chip component according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN or Any combination, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

8. The III-V semiconductor green laser chip component according to claim 1, characterized in that: The lower confinement layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper confinement layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

9. The III-V semiconductor green laser chip component according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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