Wafer laser cutting machine and heterogeneous integrated wafer process parameter optimization method

Abstract

The application provides a wafer laser cutting machine and a heterogeneous integrated wafer process parameter optimization method, and belongs to the technical field of laser cutting equipment. The wafer laser cutting machine comprises a cutting platform, an industrial computer and a laser, a Y-direction linear motor is arranged on the cutting platform, a clamp for clamping a wafer is arranged on the Y-direction linear motor, vertical columns are arranged on the two sides of the Y-direction linear motor, the vertical columns are arranged on the cutting platform, an X-direction linear motor is arranged on the vertical columns, a Z-direction linear motor is arranged on the X-direction linear motor, a laser cutting head is arranged on the Z-direction linear motor, the laser cutting head is electrically connected with the laser, the light source of the laser cutting head is infrared light with a wavelength of 1080 nm, and the X-direction linear motor, the Y-direction linear motor and the Z-direction linear motor are electrically connected with the industrial computer. Compared with the traditional laser cutting machine, the wafer laser cutting machine improves the processing efficiency on the basis of maintaining high-precision processing.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of laser cutting equipment, and particularly relates to a wafer laser cutting machine and a heterogeneous integrated wafer process parameter optimization method. BACKGROUND

[0002] With the rapid development of intelligent manufacturing, automotive electronics, artificial intelligence, 5G communication and the Internet of Things, integrated circuits as the core hardware of these industries, the market size and technical level are constantly improving. As a kind of integrated circuit, chip manufacturing has also become one of the rapidly developing industries.

[0003] Wafer cutting is a key process in chip manufacturing, and its technical precision and efficiency directly affect the performance and cost of chips. With the rapid development of semiconductor devices towards miniaturization and high integration, traditional mechanical blade cutting technology gradually faces bottlenecks: mechanical stress easily leads to wafer edge collapse or micro-cracks, especially for ultra-thin wafers (thickness less than 100 μm) or hard and brittle materials (such as SiC). Compared with mechanical cutting, the core of laser cutting is to use high-energy laser beams to precisely cut semiconductor wafers (such as silicon, silicon carbide, gallium nitride, etc.) to achieve chip separation or structured processing. Laser cutting mainly uses ultraviolet (UV) or ultrafast pulsed laser, which realizes material removal through photo-thermal or photo-chemical effect. Short wavelength (such as 355 nm ultraviolet laser) can realize smaller focused spot (micron level), and ultra-short pulse (<10 ps) can significantly reduce the heat affected zone (HAZ) by extremely high peak power to avoid thermal stress damage. In addition, laser cutting technology avoids the influence of mechanical stress on wafers through non-contact processing and high-precision energy control, reducing the generation of cracks and fragments.

[0004] However, the current laser cutting technology still needs to break through the following bottlenecks: 1. There is a contradiction between the processing precision and the processing efficiency of the wafer, and high-precision cutting needs to sacrifice cutting speed; 2. The process parameters need to be optimized when processing heterogeneous integrated wafers. Therefore, we propose a wafer laser cutting machine and a heterogeneous integrated wafer process parameter optimization method. SUMMARY

[0005] The present application provides a wafer laser cutting machine and a heterogeneous integrated wafer process parameter optimization method to solve the problems existing in the background art.

[0006] To achieve the above purpose, the present application adopts the following technical scheme:

[0007] The application provides a wafer laser cutting machine, which comprises a cutting platform, an industrial computer and a laser, a Y-direction linear motor is arranged on the cutting platform, a clamp for clamping a wafer is arranged on the Y-direction linear motor, a column is arranged on both sides of the Y-direction linear motor, the column is arranged on the cutting platform, an X-direction linear motor is arranged on the column, a Z-direction linear motor is arranged on the X-direction linear motor, a laser cutting head is arranged on the Z-direction linear motor, the laser cutting head is electrically connected with the laser, the light source of the laser cutting head is infrared light with a wavelength of 1080 nm, and the X-direction linear motor, the Y-direction linear motor and the Z-direction linear motor are electrically connected with the industrial computer.

[0008] Further, the clamp comprises a cross beam, the cross beam is slidably arranged on a sliding rail, the sliding rail is arranged on a fixing seat, and the fixing seat is arranged on the Y-direction linear motor.

[0009] Further, a plurality of clamping grooves for fixing the wafer are arranged on the cross beam, and rubber pads are arranged at edges of the clamping grooves.

[0010] Further, the fixing seat comprises a receiving box, a groove box is arranged at the top end of the receiving box, and the sliding rail is arranged on the side of the groove box away from the receiving box.

[0011] Further, a plurality of grooves are formed in the groove box, the grooves are connected with the inner cavities of the receiving box in communication, the top ends of part of the grooves are provided with stainless steel domes, and the diameters of the stainless steel domes are greater than the diameters of the grooves.

[0012] Further, the stroke of the X-direction linear motor is 0-300 mm, the positioning accuracy is ±0.003 mm, and the repeat positioning accuracy is ±0.001 mm; the stroke of the Y-direction linear motor is 0-300 mm, the positioning accuracy is ±0.003 mm, and the repeat positioning accuracy is ±0.001 mm; and the stroke of the Z-direction linear motor is 0-300 mm, the positioning accuracy is ±0.02 mm, and the repeat positioning accuracy is ±0.01 mm.

[0013] The application also provides a hetero-integrated wafer process parameter optimization method, which uses the wafer laser cutting machine described above and comprises the following steps.

[0014] S1: laser parameters of a laser, motion parameters of a laser cutting head and motion parameters of a clamp are set according to material characteristics of a hetero-integrated wafer; the laser parameters of the laser include wavelength, power and pulse width, the motion parameters of the laser cutting head include cutting speed, cutting path and focusing height, and the motion parameters of the clamp include moving speed;

[0015] S2: a multi-factor experiment is designed to screen parameter combinations.

[0016] S3: simulate the temperature field distribution, heat affected zone and stress concentration area of the heterogeneous integrated wafer under different parameter combinations in step S2 through the simulation model;

[0017] S4: perform a trial cut on the heterogeneous integrated wafer under different parameter combinations in step S2, if the trial cut result does not meet the cutting quality evaluation index, then combine the trial cut data and the simulation data, and repeat steps S2-S4 to optimize the parameters until the cutting quality evaluation index is met, if the trial cut result meets the cutting quality evaluation index, then perform a formal cut on the heterogeneous integrated wafer.

[0018] Further, in step S2, Taguchi method and response surface method are used to design experiments to screen parameter combinations.

[0019] Further, in step S4, the cutting quality evaluation index includes surface quality, cutting efficiency and heat affected zone, the surface quality includes edge collapse width and crack depth, the edge collapse width is less than 20 microns, the crack depth is less than 1 micron, the cutting efficiency is less than 1 minute per piece of unit length cutting time, and the range of the heat affected zone is less than 5 microns.

[0020] Compared with the prior art, the present application has the following technical effects:

[0021] 1、In the present application, the wafer laser cutting machine is provided with X-direction linear motor, Y-direction linear motor and Z-direction linear motor, and the three linear motors work independently, which can reduce the failure rate and increase the service life. The industrial computer controls the movement of the three linear motors in their respective directions, the industrial computer adjusts the position of the laser cutting head by controlling the X-direction linear motor and the Z-direction linear motor, and the industrial computer adjusts the position of the clamp by controlling the Y-direction linear motor. Through the cooperation of the X-direction linear motor, the Y-direction linear motor, the Z-direction linear motor and the industrial computer, the positioning accuracy and cutting accuracy of the laser cutting head and the clamp can be quickly realized, and the cutting efficiency of the wafer is greatly improved. In addition, the laser cutting head uses infrared light with a wavelength of 1080nm to cut the wafer. Compared with the traditional laser cutting machine, the time for cutting the same size wafer can be shortened from several minutes to less than one minute, further improving the cutting efficiency.

[0022] 2、In the present application, the cross beam can move along the slide rail to hold wafers of different sizes, and the laser cutting head can cut wafers of different sizes. When the clamp clamps the wafer through the clamping groove, the rubber pad is arranged at the edge of the clamping groove to increase the contact area between the clamp and the wafer, reduce stress concentration, and prevent damage to the wafer.

[0023] 3. In the application, a plurality of grooves are formed on the groove box, the grooves are connected with the inner cavity of the storage box, a portion of the grooves are provided with stainless steel domes, and the rest of the grooves are not provided with stainless steel domes, the stainless steel domes support the wafer and prevent it from falling, and the small corner scraps generated during cutting are collected in the storage box for centralized treatment.

[0024] 4. The hetero-integrated wafer process parameter optimization method provided by the application dynamically matches laser parameters, motion parameters and material characteristics, realizes parameter linkage, and significantly improves the processing efficiency and consistency of the hetero-integrated wafer. BRIEF DESCRIPTION OF DRAWINGS

[0025] The drawings described herein are used to provide further understanding of the application, form a part of the application, the illustrative embodiments of the application and the description thereof are used to explain the application, and do not constitute improper limitation on the application. In the drawings:

[0026] Figure 1 It is the overall structure schematic of the wafer laser cutting machine of the embodiment of the application Figure 1 ;

[0027] Figure 2 It is the overall structure schematic of the wafer laser cutting machine of the embodiment of the application Figure 2 ;

[0028] Figure 3 It is the structure schematic of the industrial computer and the laser of the embodiment of the application

[0029] Figure 4 It is the structure schematic of the cutting platform of the embodiment of the application

[0030] Figure 5 It is the structure schematic of the clamp of the embodiment of the application

[0031] Figure 6 It is the structure schematic of the groove box of the embodiment of the application

[0032] Figure 7 It is the schematic diagram of the cross beam clamping wafer of the embodiment of the application.

[0033] In the figure: 1, cutting platform, 2, stand, 3, laser cutting head, 4, clamp, 41, cross beam, 42, clamping groove, 5, Y linear motor, 6, Z linear motor, 7, X linear motor, 8, industrial computer, 9, laser, 10, bolt, 11, slide rail, 12, fixed seat, 121, storage box, 122, groove box, 123, groove, 124, stainless steel dome, 13, wafer. DETAILED DESCRIPTION

[0034] With reference to the accompanying drawings, the technical solutions in the embodiments of the present application will be clearly and completely described below, obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work belong to the protection scope of the present application.

[0035] In the present application, the terms of left, right, up, down, front, back and the like are established based on the positional relationship shown in the drawings, and the corresponding positional relationship may also change accordingly according to the different drawings, therefore, it cannot be understood as the absolute limitation to the protection scope.

[0036] Please refer to Figures 1 to 7 The embodiment provides a wafer laser cutting machine, which comprises a cutting platform 1, an industrial computer 8 and a laser 9. The Y-direction linear motor 5 is fixedly installed on the cutting platform 1. The clamp 4 is fixedly arranged on the Y-direction linear motor 5. The clamp 4 is used for clamping the wafer 13, so that the laser cutting head 3 can cut the wafer 13. The slider on the Y-direction linear motor 5 can drive the clamp 4 to reciprocate along the Y direction.

[0037] Specifically, one post 2 is arranged on each side of the Y-direction linear motor 5. The two posts 2 are fixedly arranged on the cutting platform 1, and the post 2 is made of marble. The X-direction linear motor 7 is fixedly installed on the two posts 2. The Z-direction linear motor 6 is fixedly installed on the X-direction linear motor 7. The laser cutting head 3 is fixedly installed on the Z-direction linear motor 6 through the bolt 10. The slider on the X-direction linear motor 7 can drive the Z-direction linear motor 6 to reciprocate along the X direction. The slider on the Z-direction linear motor 6 can drive the laser cutting head 3 to reciprocate along the Z direction. The laser cutting head 3 is electrically connected with the laser 9. The type of the laser 9 is collimation of 100 mm, and focusing is 125 mm. The laser 9 can emit infrared light with a wavelength of 1080 nm. In the embodiment, the light source used by the laser cutting head 3 is the infrared light with a wavelength of 1080 nm emitted by the laser 9. Compared with the yellow-green light cutting, the infrared light with a wavelength of 1080 nm can reach the best cutting threshold in a short time, and higher efficiency cutting can be realized by adjusting the pulse width of the laser 9. Compared with the traditional laser cutting machine, the time for cutting the wafer 13 with the same size can be shortened from several minutes to within one minute.

[0038] Specifically, the X linear motor 7, the Y linear motor 5 and the Z linear motor 6 are electrically connected with the industrial computer 8, the X linear motor 7, the Y linear motor 5 and the Z linear motor 6 work independently, and the industrial computer 8 can control the X linear motor 7, the Y linear motor 5 and the Z linear motor 6 to move along their respective directions. The industrial computer 8 adjusts the position of the laser cutting head 3 by controlling the movement of the X linear motor 7 and the Z linear motor 6, and adjusts the position of the clamp 4 (i.e. the position of the wafer 13) by controlling the movement of the Y linear motor 5. In this embodiment, the stroke of the X linear motor 7 is 0-300mm, the maximum stroke is 300mm, the positioning accuracy is ±0.003mm, and the repeat positioning accuracy is ±0.001mm; the stroke of the Y linear motor 5 is 0-300mm, the maximum stroke is 300mm, the positioning accuracy is ±0.003mm, and the repeat positioning accuracy is ±0.001mm; the stroke of the Z linear motor 6 is 0-300mm, the maximum stroke is 300mm, the positioning accuracy is ±0.02mm, and the repeat positioning accuracy is ±0.01mm.

[0039] Specifically, the wafer laser cutting machine is provided with the X linear motor 7, the Y linear motor 5 and the Z linear motor 6, and the three linear motors work independently, which can reduce the failure rate and increase the service life. The industrial computer 8 controls the movement of the three linear motors in their respective directions, the industrial computer 8 adjusts the position of the laser cutting head 3 by controlling the X linear motor 7 and the Z linear motor 6, and adjusts the position of the clamp 4 by controlling the Y linear motor 5. Through the cooperation of the X linear motor 7, the Y linear motor 5, the Z linear motor 6 and the industrial computer 8, the positioning accuracy and cutting accuracy of the laser cutting head 3 and the clamp 4 can be quickly realized, and the cutting efficiency of the wafer 13 can be greatly improved. In addition, the laser cutting head 3 uses infrared light with a wavelength of 1080nm to cut the wafer 13. Compared with the traditional laser cutting machine, the time for cutting the same size wafer 13 can be shortened from several minutes to within one minute, further improving the cutting efficiency.

[0040] Specifically, the clamp 4 includes two oppositely arranged cross beams 41, and the two cross beams 41 are slidingly arranged on the slide rail 11. The slide rail 11 is a high-precision linear guide rail with a plating layer on the surface to prevent wear. The slide rail 11 is fixedly arranged at the edge of the top end of the groove box 122 of the fixed seat 12, and the setting direction (i.e. the length direction of the slide rail 11) is the X direction. The cross beams 41 can freely reciprocate on the slide rail 11. By moving the cross beams 41, the size of the wafer 13 fixing area can be adjusted to adapt to wafers 13 of different sizes, such as 4 inches, 6 inches, 8 inches, etc. In this way, the clamp 4 can clamp wafers 13 of different sizes, and the laser cutting head 3 can cut wafers 13 of different sizes.

[0041] Specifically, the beam 41 has two driving modes on the slide rail 11, one is manual mode, and the other is electric mode. In the manual mode, the staff needs to increase the slide rail locking mechanism, which can use the commonly used slide rail locking mechanism, which will not be described in detail here. In operation, the staff loosens the slide rail locking mechanism, manually pushes the beam 41 to the target position, and then locks it again. In the electric mode, the beam 41 is driven to move on the slide rail 11 by a stepping motor or a servo motor, and then controlled by an industrial computer 8 to realize automatic adjustment. The corresponding driving structure can use the conventional one, which will not be described in detail here.

[0042] Specifically, the opposite side of each of the two beams 41 is fixedly provided with a plurality of clamping grooves 42, and the clamping grooves 42 are uniformly arranged. The clamping grooves 42 are used to fix the wafer 13. Rubber pads are arranged at the edges of the clamping grooves 42. When the clamp 4 clamps the wafer 13, the rubber pads can increase the contact area between the clamp 4 and the wafer 13, reduce stress concentration, avoid micro-cracks or breakage of the wafer 13 due to external force during the cutting process, and prevent unnecessary damage and destruction of the wafer 13.

[0043] Specifically, the fixed seat 12 is fixedly arranged on the Y-direction linear motor 5. The fixed seat 12 includes a receiving box 121, and the top of the receiving box 121 is open. A groove box 122 is fixedly arranged at the top end of the receiving box 121, and a plurality of grooves 123 are arranged on the groove box 122. The grooves 123 are connected with the inner cavity of the receiving box 121 through the groove box 122. The top end of part of the grooves 123 is provided with a stainless steel dome 124. That is, a proper amount of stainless steel domes 124 are placed on the grooves 123 below the cutting position of the wafer 13. The diameter of the stainless steel dome 124 is greater than the diameter of the groove 123. The stainless steel dome 124 can support the wafer 13. After the wafer 13 is cut, the cutting area and the edge of the wafer 13 are separated, and the stainless steel dome 124 supports the wafer 13 to prevent the wafer 13 from falling and breaking. During the entire cutting process of the wafer 13, after each cutting is completed, the corner scraps larger than the diameter of the groove 123 will fall on the top end of the groove box 122. These large corner scraps need to be cleaned manually. The corner scraps smaller than the diameter of the groove 123 will fall through the grooves 123 without the stainless steel dome 124 to the receiving box 121 for centralized treatment.

[0044] Specifically, each component of the wafer laser cutting machine can be disassembled and installed. In particular, the receiving box 121 can be disassembled and installed. When the receiving box 121 is used for a period of time, the staff disassembles the receiving box 121 to facilitate cleaning of the receiving box 121.

[0045] The embodiment also provides a method for optimizing process parameters of a heterogeneous integrated wafer, which uses the wafer laser cutting machine described above and takes a Si / GaN heterogeneous integrated wafer as an example and includes the following steps:

[0046] S1: According to the material properties of the Si / GaN heterogeneous integrated wafer, the laser parameters of the laser 9, the motion parameters of the laser cutting head 3 and the motion parameters of the clamp 4 are set on the industrial computer 8. The laser parameters of the laser 9 include wavelength, power and pulse width, the motion parameters of the laser cutting head 3 include cutting speed, cutting path and focusing height, and the motion parameters of the clamp 4 include moving speed.

[0047] S2: The key parameter combinations are screened by using the Taguchi method to design a multi-factor orthogonal experiment, and then the response surface method is used for fine optimization.

[0048] S3: For the Si / GaN heterogeneous integrated wafer, a simulation software is used to build a layered model, the temperature field distribution, the heat affected zone (HAZ) and the stress concentration area of the heterogeneous integrated wafer under different parameter combinations in step S2 are simulated through the simulation model, and high-risk parameter combinations, i.e. parameter combinations that do not meet the cutting quality evaluation indexes, are excluded.

[0049] S4: The heterogeneous integrated wafer under different parameter combinations in step S2 is trial-cut, the cutting appearance and composition change are analyzed through SEM / EDS, then the yield (greater than 99%) is counted, and the defect types (such as edge collapse, micro-cracks and interlayer peeling) are recorded. If the trial-cut result does not meet the cutting quality evaluation indexes, the parameters are optimized repeatedly by combining the trial-cut data and the simulation data, steps S2-S4, until the cutting quality evaluation indexes are met, and then the Si / GaN heterogeneous integrated wafer is formally cut; if the trial-cut result meets the cutting quality evaluation indexes, the heterogeneous integrated wafer is formally cut.

[0050] Specifically, the cutting quality evaluation indexes include surface quality, cutting efficiency and heat affected zone, the surface quality includes edge collapse width and crack depth, the edge collapse width is less than 20 μm, the crack depth is less than 1 μm, the cutting efficiency is less than 1 minute / piece per unit length of cutting time, and the range of the heat affected zone is less than 5 μm.

[0051] Specifically, in the embodiment, the process parameters optimized for the Si / GaN hetero-integrated wafer are used to cut the Si layer and the GaN layer by using different parameters. For the Si layer, high power (40 W), low speed (5 mm / s), and deep focusing (the laser cutting head 3 is moved down by the Z linear motor 6) are used for cutting; for the GaN layer, low power (25 W), high speed (10 mm / s), and shallow focusing (the laser cutting head 3 is moved up by the Z linear motor 6) are used for cutting. In addition, 1080 nm infrared laser is used in combination with picosecond-level pulse (<10 ps) and intermittent emission strategy to ensure that the material is fully cooled during the pulse interval, and the heat-affected zone (HAZ) is controlled within 3 μm (the HAZ of the traditional nanosecond laser is >10 μm). In addition, the gradual power or speed reduction cutting is used in the hetero-interface area (Si / GaN junction) to avoid stress concentration and cause delamination.

[0052] Specifically, the mapping relationship between the material properties of the wafer 13 and the process parameters established in the optimization process of the hetero-integrated wafer process parameter optimization method can be used to establish a material-process database. When cutting a new hetero-integrated wafer (such as gallium oxide), the database can recommend initial values based on similar material parameters, and the laser cutting machine can support one-key calling, thereby shortening the research and development cycle.

[0053] Specifically, the process parameter optimization method dynamically matches the laser parameters, motion parameters, and material properties, and realizes real-time collaborative adjustment and parameter linkage through the industrial computer 8, thereby significantly improving the processing efficiency and consistency of the hetero-integrated wafer.

[0054] The above embodiments only illustrate the basic principles and characteristics of the present application, but are not limited to the above embodiments. It should be understood that, for those skilled in the art, various changes and modifications can be made to the present application without departing from the spirit and scope of the present application, and these changes and modifications all fall within the scope of the present application. The scope of protection of the present application is defined by the appended claims and their equivalents.

Claims

1. A method for optimizing process parameters of heterogeneous integrated wafers, characterized in that, The method is implemented using a wafer laser dicing machine, which includes a dicing platform (1), an industrial control computer (8), and a laser (9). A Y-axis linear motor (5) is mounted on the dicing platform (1), and a clamp (4) for holding the wafer (13) is mounted on the Y-axis linear motor (5). Columns (2) are mounted on both sides of the Y-axis linear motor (5), and the columns (2) are mounted on the dicing platform (1). An X-axis linear motor (7) is mounted on the column (2), and a Z-axis linear motor (7) is mounted on the X-axis linear motor (7). A linear motor (6) is provided with a laser cutting head (3) on the Z-axis linear motor (6). The laser cutting head (3) is electrically connected to a laser (9). The X-axis linear motor (7), Y-axis linear motor (5), and Z-axis linear motor (6) are all electrically connected to an industrial control computer (8). The fixture (4) includes a crossbeam (41). The crossbeam (41) is slidably mounted on a slide rail (11). The slide rail (11) is mounted on a fixed seat (12). The fixed seat (12) is mounted on the Y-axis linear motor (5). The method includes the following steps: S1: Set the laser parameters of the laser (9), the motion parameters of the laser cutting head (3) and the motion parameters of the fixture (4) according to the material characteristics of the heterogeneous integrated wafer; the laser parameters of the laser (9) include wavelength, power and pulse width, the motion parameters of the laser cutting head (3) include cutting speed, cutting path and focusing height, and the motion parameters of the fixture (4) include moving speed. S2: Using the Taguchi method and response surface methodology, multi-factor experiments were designed to screen parameter combinations; S3: Simulate the temperature field distribution, heat-affected zone, and stress concentration region of the heterogeneous integrated wafer under different parameter combinations in step S2 using a simulation model; S4: Perform trial cutting of the heterogeneous integrated wafer under different parameter combinations in step S2. If the trial cutting results do not meet the cutting quality evaluation index, repeat steps S2-S4 to optimize the parameters based on the trial cutting data and simulation data until the cutting quality evaluation index is met. If the trial cutting results meet the cutting quality evaluation index, then perform formal cutting of the heterogeneous integrated wafer.

2. The method for optimizing heterogeneous integrated wafer process parameters according to claim 1, characterized in that, In step S4, the cutting quality evaluation indicators include surface quality, cutting efficiency, and heat-affected zone. The surface quality includes chipping width and crack depth. The chipping width is less than 20 μm, the crack depth is less than 1 μm, the cutting efficiency is less than 1 minute / piece, and the range of the heat-affected zone is less than 5 μm.

3. The method for optimizing heterogeneous integrated wafer process parameters according to claim 1, characterized in that, The laser cutting head (3) uses infrared light with a wavelength of 1080nm as its light source.

4. The method for optimizing heterogeneous integrated wafer process parameters according to claim 1, characterized in that, The fixing base (12) includes a storage box (121), the top of the storage box (121) is provided with a groove box (122), the slide rail (11) is provided on the side of the groove box (122) away from the storage box (121), the groove box (122) is provided with a number of grooves (123), the grooves (123) penetrate the groove box (122) and are connected to the inner cavity of the storage box (121), and the top of some of the grooves (123) is provided with a stainless steel dome (124), the diameter of the stainless steel dome (124) is larger than the diameter of the groove (123).

5. The method for optimizing heterogeneous integrated wafer process parameters according to claim 1, characterized in that, The crossbeam (41) is provided with a number of slots (42) for fixing the wafer (13), and rubber pads are provided at the edges of the slots (42).

6. The method for optimizing heterogeneous integrated wafer process parameters according to claim 1, characterized in that, The X-axis linear motor (7) has a stroke of 0-300mm, a positioning accuracy of ±0.003mm, and a repeatability of ±0.001mm. The Y-axis linear motor (5) has a stroke of 0-300mm, a positioning accuracy of ±0.003mm, and a repeatability of ±0.001mm. The Z-axis linear motor (6) has a stroke of 0-300mm, a positioning accuracy of ±0.02mm, and a repeatability of ±0.01mm.

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