Display screen and electronic equipment

Abstract

The embodiment of the invention provides a display screen and electronic equipment, and the display screen comprises a first chip and a photosensitive module. The photosensitive module is used for sensing ambient light and outputting a sensing signal, and comprises a first active layer and a first gate structure which is positioned above the first active layer and is parallel to the first active layer; the first gate structure is provided with at least one opening, so that light of ambient light is diffracted to an area, parallel to and opposite to the first gate structure, of the first active layer through the opening; and the first chip is connected with the photosensitive module and is used for determining the intensity of the ambient light according to the sensing signal.

Description

Technical Field

[0001] The present disclosure relates to the field of devices, and in particular, to but not limited to a display screen and an electronic device. Background Art

[0002] Currently, by integrating the light sensing function into the display screen, the cost of the light sensor can be effectively saved; however, this solution is applicable to low-resolution amorphous silicon (A-Si) display screens and cannot be applied to high-resolution low-temperature polycrystalline silicon (LTPS) display screens. The reason is that: the thin-film transistors (TFTs) in the amorphous silicon display screen are bottom-gate structures, and ambient light can irradiate the channels in the thin-film transistors from above the display screen, thereby realizing the light sensing function; while the thin-film transistors in the low-temperature polycrystalline silicon display screen are top-gate structures. Due to the shielding of the gate metal layer, the change in the light sensing signal is very small, and the sensitivity and accuracy are not sufficient to be used as a light sensing device. Therefore, there is an urgent need for a high-resolution display screen with an integrated light sensing function. Summary of the Invention

[0003] In view of this, embodiments of the present disclosure provide a display screen and an electronic device.

[0004] In a first aspect, embodiments of the present disclosure provide a display screen, including: a first chip and a light sensing module;

[0005] The light sensing module is configured to sense ambient light and output a sensing signal, and includes a first active layer and a first gate structure located above the first active layer and parallel to the first active layer; the first gate structure has at least one opening to allow the light of the ambient light to diffract through the opening to the area parallel to and opposite to the first active layer of the first gate structure;

[0006] The first chip is connected to the light sensing module and is configured to determine the intensity of the ambient light according to the sensing signal.

[0007] In some embodiments, the display screen further includes: a reference module;

[0008] The reference module is configured to sense non-ambient light and output a reference signal, and includes a second active layer and a second gate structure located above the second active layer and parallel to the second active layer; a shielding member is disposed above the reference module;

[0009] The first chip is further connected to the reference module and is configured to calibrate the intensity of the ambient light according to the reference signal.

[0010] In some embodiments, the display screen includes: a first region and a second region;

[0011] The first region is a non-display region of the display screen, and the second region is a display region of the display screen; the first chip and the photosensitive module are disposed in the first region.

[0012] In some embodiments, the second region includes:

[0013] A display module, connected to a second chip, for changing the brightness of corresponding pixels of the display module under the indication of a control signal.

[0014] In some embodiments, the display screen includes a substrate;

[0015] The photosensitive module is arranged on the surface of the substrate in the first region;

[0016] The display module is arranged on the surface of the substrate in the second region.

[0017] In some embodiments, the first region is located at the edge of the display screen and encloses the second region therein.

[0018] In some embodiments, the shape of the opening is a closed figure; and / or, the shape of the opening is an open figure extending from one side of the gate structure to the other side.

[0019] In some embodiments, the display screen further includes: a liquid crystal layer and a color filter layer stacked in sequence on the surface of the substrate.

[0020] In some embodiments, the first gate structure in the photosensitive module has the same structure as the second gate structure in the reference module.

[0021] In a second aspect, embodiments of the present disclosure provide an electronic device, including:

[0022] A display screen;

[0023] A controller;

[0024] The display screen includes:

[0025] A first chip and a photosensitive module;

[0026] The photosensitive module is configured to sense ambient light and output a sensing signal, and includes a first active layer, and a first gate structure located above the first active layer and parallel to the first active layer; the first gate structure has at least one opening, so that the light of the ambient light diffracts through the opening to a region parallel to and opposite to the first active layer of the first gate structure;

[0027] The first chip is connected to the photosensitive module and the controller, and is configured to determine the intensity of the ambient light according to the sensing signal and feedback the intensity of the ambient light to the controller. Description of the Drawings

[0028] In the drawings (which are not necessarily drawn to scale), like reference numerals may describe like components in different views. Like reference numerals with different letter suffixes may represent different examples of like components. The drawings generally illustrate, by way of example and not limitation, the various embodiments discussed herein.

[0029] Figure 1 Structural schematic of a display screen provided by an embodiment of the present disclosure Figure 1 ;

[0030] Figure 2 Structural schematic of a photosensitive module provided by an embodiment of the present disclosure Figure 1 ;

[0031] Figure 3 Structural schematic of a photosensitive module provided by an embodiment of the present disclosure Figure 2 ;

[0032] Figure 4 Structural schematic of a photosensitive module provided by an embodiment of the present disclosure Figure 3 ;

[0033] Figure 5 Structural schematic of a display screen provided by an embodiment of the present disclosure Figure 2 ;

[0034] Figure 6 Structural schematic of a photosensitive module provided by an embodiment of the present disclosure Figure 4 ;

[0035] Figure 7 Structural schematic of a display screen provided by an embodiment of the present disclosure Figure 3 ;

[0036] Figure 8 Flow chart of a method for forming a display screen provided by an embodiment of the present disclosure;

[0037] Figures 9 to 13 Structural schematic during the formation of a display screen provided by an embodiment of the present disclosure;

[0038] Figure 14 Structural schematic of an electronic device provided by an embodiment of the present disclosure. Detailed Description of the Embodiments

[0039] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the specific embodiments set forth herein. On the contrary, these embodiments are provided so that the present disclosure can be more thoroughly understood and the scope of the present disclosure can be fully conveyed to those skilled in the art.

[0040] In the following description, numerous specific details are given to provide a more thorough understanding of the present disclosure. However, it will be apparent to one of ordinary skill in the art that the present disclosure may be practiced without one or more of these details. In other instances, well-known features have not been described in order to avoid obscuring the present disclosure; that is, not all features of actual embodiments are described here, and well-known functions and structures are not described in detail.

[0041] In the drawings, for clarity, the dimensions of layers, regions, elements, and their relative dimensions may be exaggerated. Like reference numerals throughout the drawings denote like elements.

[0042] It should be understood that when an element or layer is referred to as being "on", "adjacent to", "connected to", or "coupled to" another element or layer, it can be directly on, adjacent to, connected to, or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on", "directly adjacent to", "directly connected to", or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or portion from another element, component, region, layer, or portion. Thus, without departing from the teachings of the present disclosure, the first element, component, region, layer, or portion discussed below may be referred to as the second element, component, region, layer, or portion. And when discussing the second element, component, region, layer, or portion, it does not imply that a first element, component, region, layer, or portion necessarily exists in the present disclosure.

[0043] The purpose of the terms used herein is only to describe specific embodiments and is not a limitation of the present disclosure. As used herein, the singular forms "a", "an", and "the" are also intended to include the plural forms unless the context clearly dictates otherwise. It should also be understood that the terms "comprising" and / or "including", when used in this specification, specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. As used herein, the term "and / or" includes any and all combinations of the related listed items.

[0044] Before introducing the embodiments of the present disclosure, three directions for describing a three-dimensional structure that may be used in the following embodiments are defined. Taking the Cartesian coordinate system as an example, the three directions may include the X-axis, Y-axis, and Z-axis directions. The X-axis and Y-axis directions are two intersecting directions on the plane where the display screen is located, and the Z-axis direction is perpendicular to the plane where the display screen is located.

[0045] Next, the display screen and the electronic device in the embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0046] The embodiments of the present disclosure provide a display screen 100. Figure 1 It is a schematic structural diagram of the display screen 100 provided by the embodiments of the present disclosure. As Figure 1 shown, the display screen 100 includes: a photosensitive module 110 and a first chip 120. The photosensitive module 110 is used to sense ambient light and output a sensing signal. The photosensitive module 110 (please refer to Figure 2 ) includes a first active layer 111, and a first gate structure 112 located above the first active layer 111 and parallel to the first active layer 111; the first gate structure 112 has at least one opening C to enable the light of the ambient light to be diffracted through the opening C to the area of the first active layer 111 opposite to the first gate structure 112 in parallel. The first chip 120 is connected to the photosensitive module 110 and is used to determine the intensity of the ambient light according to the sensing signal.

[0047] In the embodiments of the present disclosure, the photosensitive module 110 may be any transistor having a function of sensing light (i.e., ambient light), such as a thin-film transistor, and no specific limitation is made thereto. The number of the photosensitive modules 110 may be set according to actual needs. For example, the photosensitive module 110 may be 1, 2, 3, etc.; among them, multiple photosensitive modules 110 are connected in parallel.

[0048] Please refer to Figure 2, the first active layer 111 includes a first channel structure 111b, and first source / drain electrodes (111a and 111c) located on both sides of the channel structure; wherein, when the first channel structure 111b is an N-type channel, P-type doping can be performed in the first source / drain electrodes (111a and 111c), and the doping ions for P-type doping can be atoms, ions or plasmas of group III elements such as boron, gallium, indium, etc.; or, when the first channel structure 111b is a P-type channel, N-type doping can be performed in the first source / drain electrodes (111a and 111c), and the doping ions for N-type doping can be atoms, ions or plasmas of group V elements such as phosphorus, antimony, arsenic, etc.

[0049] In the embodiments of the present disclosure, the photosensitive principle of the photosensitive module 110 is mainly based on the photoelectric effect. Specifically, please continue to refer to Figure 2 , when light irradiates on the first channel structure 111b, photons will interact with electrons in the first channel structure 111b, causing the electrons to gain energy and transition from the valence band to the conduction band, thereby forming carriers (free electrons and holes) in the first channel structure 111b. In this way, the concentration of free electrons in the first channel structure 111b can be changed, and further the conductivity of the first channel structure 111b can be changed to realize the detection of the light intensity.

[0050] For example, when the first channel structure 111b is an N-type channel, the holes generated by light illumination are recombined or swept out of the depletion region, increasing the free electrons generated by light illumination, that is, the concentration of free electrons in the first channel structure 111b is relatively high, reducing the resistance of the first channel structure 111b. At this time, when the positive voltage applied to the first source / drain electrodes (111a and 111c) is fixed, the current of the drain electrode will increase (the current direction is from the drain electrode to the source electrode). In this way, the ambient light can be sensed according to the change of the drain current with the light intensity, and the magnitude of the drain current can be used as the output sensing signal.

[0051] Another example is that when the first channel structure 111b is a P-type channel, the electrons generated by light illumination are recombined or swept out of the depletion region, increasing the holes generated by light illumination, that is, the concentration of holes in the first channel structure 111b increases, reducing the resistance of the first channel structure 111b. At this time, when the negative voltage on the first source / drain electrodes (111a and 111c) is fixed, the current of the drain electrode will increase (the current direction is from the source electrode to the drain electrode). In this way, the ambient light can be sensed according to the change of the drain current with the light intensity, and the magnitude of the drain current can be used as the output sensing signal.

[0052] It should be noted that one of the first source electrode 111a and the first drain electrode 111c is the source electrode, and the other is the drain electrode.

[0053] In the embodiments of the present disclosure, the structures of the first gate structures in the plurality of photosensitive modules 110 may be the same or different. Next, taking one first gate structure 112 as an example, the first gate structure 112 will be introduced in detail.

[0054] In the embodiments of the present disclosure, the first gate structure 112 is located on the surface of the first channel structure 111b; the number of openings C on the first gate structure 112 can be set according to actual needs. For example, the number of openings C can be 1, 2, 3, etc.; among them, Figure 2 the number of openings C shown in is 3, namely opening C1, opening C2, and opening C3.

[0055] In some embodiments, the shape of the opening C is a closed figure; and / or, the shape of the opening C is an open figure extending from one side of the gate structure to the other side. Among them, the closed figure includes a rectangle, a circle, etc., and the open figure includes a straight line shape, an arc shape, etc. For example, please continue to refer to Figure 2 that the shapes of opening C1, opening C2, and opening C3 are a rectangle, a circle, and a straight line shape, respectively.

[0056] It should be noted that, please continue to refer to Figure 2 that even if the open figure (such as opening C3) divides the first gate structure 112 into multiple parts, the multiple divided parts can also be regarded as one gate structure, that is, the same first channel structure 111b is controlled by the multiple divided parts together.

[0057] In addition, in the embodiments of the present disclosure, the maximum size exposed by the opening C (including opening C1, opening C2, and opening C3) is greater than the wavelength of visible light. For example, the maximum size exposed by the opening C is 500 nanometers (nm). In this way, visible light of 500 nanometers can be transmitted through the first gate structure 112 to the first channel structure 111b; further, since the absorption depth of the first channel structure 111b for 500nm light is relatively large, when the maximum size exposed by the opening C is 500nm, it can ensure that photo-generated carriers are generated in the first channel structure 111b.

[0058] In the embodiments of the present disclosure, the first gate structure 112 includes: a first gate oxide layer 112a and a first gate metal layer 112b that are sequentially located on the surface of the first channel structure 111b; the opening C can penetrate the first gate metal layer 112b (as Figure 3 shown), or can penetrate both the first gate metal layer 112b and the first gate oxide layer 112a at the same time (as Figure 4 shown).

[0059] It should be noted that the first channel structure 111b exposed by the opening C has the same doping as the first source-drain electrodes (111a and 111c). For example,Figure 3 and Figure 4 As shown, the regions exposed by the openings C1, C2, and C3 have the same doping type as the first source / drain (111a and 111c); this is because: when doping the first source / drain (111a and 111c), the first gate structure 112 can be used as a mask. In this way, some doping ions will be doped into the first channel structure 111b exposed by the opening C. Since the size of the opening C is small, even if some ions are doped into the first channel structure 111b, it will not affect the photo-generated carriers generated in the first channel structure 111b. Additionally, when doping the first source / drain (111a and 111c), when the set mask can completely block the first channel structure 111b, in this case, no doping ions will be doped into the first channel structure 111b (for example Figure 2 the structure shown).

[0060] In the embodiments of the present disclosure, please continue to refer to Figure 1 , the first chip 120 is connected to the drain of the photosensing module 110. According to the magnitude of the current of the drain of the photosensing module 110 (i.e., the sensing signal), the intensity of the ambient light is determined; wherein, the greater the current of the drain of the photosensing module 110, the stronger the intensity of the ambient light; the smaller the current of the drain of the photosensing module 110, the smaller the intensity of the ambient light. Additionally, the first chip 120 can be disposed at any suitable position in the display screen 100; for example Figure 1 the first chip 120 in Figure 5 is located at the top of the display screen 100; or, for another example

[0061] In the embodiments of the present disclosure, since the first gate structure 112 has at least one opening C, the light of the ambient light can be diffracted through the opening C onto the first channel structure 111b, that is, the first channel structure 111b can receive the light transmitted from the first gate structure 112, thereby generating carriers (free electrons and holes) in the first channel structure 111b. In this way, the concentration of free electrons or holes in the first channel structure 111b can be changed, and further the conductivity of the first channel structure 111b can be changed, realizing the detection of the light intensity.

[0062] Next, in combination with Figures 5 to 7 , the display screen 100 will be introduced in detail.

[0063] In some embodiments, please refer to Figure 5 and Figure 6, the display screen 100 further includes: a reference module 130; the reference module 130 is used to sense non-environmental light and output a reference signal; the reference module 130 includes a second active layer 131 and a second gate structure 132 located above the second active layer 131 and parallel to the second active layer 131; a shielding member is provided above the reference module 130; the first chip 120 is also connected to the reference module 130 and is used to calibrate the intensity of the environmental light according to the reference signal.

[0064] In the embodiments of the present disclosure, the non-environmental light refers to the environmental light after being blocked. By blocking the reference module 130, the current in the reference module 130 can be made not affected by the environmental light. Here, the shielding member can be any component that can block the environmental light.

[0065] In the embodiments of the present disclosure, in order to avoid the test results being affected by the different structures of the reference module 130 and the photosensitive module 110, therefore, the structure of the reference module 130 is exactly the same as that of the photosensitive module 110; for example, when the number of the photosensitive modules 110 is 3, the number of the reference modules 130 is also 3, and each reference module 130 has exactly the same structure as the corresponding photosensitive module 110.

[0066] Specifically, when the photosensitive module 110 has the structure as Figure 2 shown, the structure of the reference module 130 is as Figure 6 shown. The reference module 130 includes a second active layer 131 and a second gate structure 132; wherein, the second active layer 131 includes a second channel structure 131b and second source-drain electrodes (131a and 131c) located on both sides of the channel structure.

[0067] Further, when the first channel structure 111b in the photosensitive module 110 is an N-type channel and the first source-drain electrodes (111a and 111c) are P-type doped, the second channel structure 131b in the reference module 130 is also an N-type channel, and the second source-drain electrodes (131a and 131c) are also P-type doped; or, when the first channel structure 111b in the photosensitive module 110 is a P-type channel and the first source-drain electrodes (111a and 111c) are N-type doped, the second channel structure 131b in the reference module 130 is also a P-type channel, and the second source-drain electrodes (131a and 131c) are also N-type doped.

[0068] In the embodiments of the present disclosure, since a shielding member is provided above the reference module 130, the reference module 130 is not affected by the environmental light, that is, no photoelectric effect will occur in the reference module 130, and further the original conductivity of the second channel structure 131b is maintained.

[0069] In some embodiments, the structures of the first gate structure 112 in the photosensing module 110 and the second gate structure 132 in the reference module 130 are the same.

[0070] Specifically, as Figure 6 shown, the second gate structure 132 is located on the surface of the second channel structure 131b; the number, positions, and shapes of the openings C in the second gate structure 132 are the same as those of the corresponding first gate structure 112. That is, the number of the openings C shown in the second gate structure 132 is also three, namely the openings C4, C5, and C6; among them, the shapes of the openings C4, C5, and C6 are rectangular, circular, and linear, respectively. In this way, it is ensured that the gate control capabilities of the first gate structure 112 (as Figure 2 shown) and the second gate structure 132 are the same, reducing the test errors caused by different gate structures.

[0071] In the embodiments of the present disclosure, the second gate structure 132 includes: a second gate oxide layer (not shown) and a second gate metal layer that are sequentially located on the surface of the second channel structure 131b; the opening C may penetrate the second gate metal layer or may penetrate both the second gate metal layer and the second gate oxide layer simultaneously.

[0072] In the embodiments of the present disclosure, please continue to refer to Figure 5 , the first chip 120 is connected to the drain of the reference module 130. According to the magnitude of the current at the drain of the reference module 130 (i.e., the reference signal), the magnitude of the current at the drain in the absence of ambient light is determined, thereby providing a reference benchmark for the photosensing module 110. Furthermore, according to the difference between the magnitudes of the drain currents of the photosensing module 110 and the reference module 130, the magnitude of the current of the photosensing module 110 affected only by ambient light can be obtained.

[0073] The reference module 130 provided in the embodiments of the present disclosure is the same as the photosensing module 110. For the technical features not detailedly disclosed in the reference module 130, please refer to the photosensing module 110 for understanding and will not be elaborated here.

[0074] In the embodiments of the present disclosure, since the reference module 130 is provided in the display screen 100, the magnitude of the current in the absence of ambient light (i.e., the reference signal) can be measured through the reference module 130, and the magnitudes of the source currents of the reference module 130 and the photosensing module 110 are obtained through the first chip 120. Thus, according to the difference between the magnitudes of the currents of these two modules, the magnitude of the current of the photosensing module 110 affected only by ambient light can be determined, and further the intensity of the ambient light can be calibrated according to the reference signal.

[0075] In the embodiments of the present disclosure, please continue to refer to Figure 5, the photosensitive module 110, the first chip 120, and the reference module 130 are connected by metal wires 140, so that the drain currents (i.e., the sensing signal and the reference signal) of the photosensitive module 110 and the reference module 130 can be transmitted to the first chip 120. Among them, Figure 5 It is only a schematic diagram of the connection of the metal wires 140.

[0076] In some embodiments, please continue to refer to Figure 5 , the display screen 100 includes: a first area A and a second area B; the first area A is a non-display area of the display screen 100, and the second area B is a display area of the display screen 100; the first chip 120 and the photosensitive module 110 are disposed in the first area A.

[0077] In the embodiments of the present disclosure, the display area refers to: the part of the display screen 100 that actually displays images or content, usually composed of a pixel array, and each pixel is independently controlled by a thin film transistor (TFT) or an OLED light emitting unit. The non-display area refers to: the part of the display screen 100 that does not participate in image display, usually located at the edge of the screen, and is used to integrate functional components or provide structural support.

[0078] In the embodiments of the present disclosure, the first chip 120 and the photosensitive module 110 are disposed in the first area A. In this way, on the one hand, it is possible to avoid the influence of the brightness of the display area on the sensing result of the photosensitive module 110; on the other hand, it is possible to avoid the first chip 120 and the photosensitive module 110 blocking some pixels, resulting in problems such as dark spots, uneven brightness, or resolution degradation on the screen.

[0079] In some embodiments, the first area A is located at the edge of the display screen 100 and encloses the second area B.

[0080] That is to say, the non-display area is located at the edge of the display screen 100 and encloses the display area. In this way, the display area can be increased, thereby increasing the screen-to-body ratio; at the same time, it is convenient to integrate hardware such as cameras, sensors, antennas, and buttons on the edge of the display screen, reducing the impact on the display effect of the display screen 100.

[0081] In some embodiments, the second area B includes: a display module (not shown), which is connected to a second chip (not shown) and is used to change the brightness of the corresponding pixels of the display module under the indication of a control signal.

[0082] In an embodiment of the present disclosure, the display module may be any transistor with a control function, such as a thin-film transistor. The second chip is connected to the first chip 120 and is configured to output a control signal according to the intensity of ambient light; the control signal is used to map and control the current output by the display module according to a brightness curve, thereby changing the brightness of the corresponding pixels of the display module. Among them, the higher the intensity of the ambient light, the higher the brightness of the corresponding pixels controlled by the display module; conversely, the lower the intensity of the ambient light, the lower the brightness of the corresponding pixels controlled by the display module.

[0083] It should be noted that the first chip 120 and the second chip may be the same chip or different chips, and the present disclosure does not limit this.

[0084] In some embodiments, please refer to Figure 5 and Figure 7 , the display screen 100 includes a substrate 10; the photosensitive module 110 is arranged on the surface of the substrate 10 in the first region A; the display module is arranged on the surface of the substrate 10 in the second region B.

[0085] In an embodiment of the present disclosure, the substrate 10 may be a TFT array substrate, and the photosensitive module 110, the reference module 130, and the display module are integrated on the surface. Since the photosensitive module 110, the reference module 130, and the display module are all integrated on the surface of the substrate 10, the complexity of the metal wiring is reduced; at the same time, since the structures of the photosensitive module 110, the reference module 130, and the display module are similar, that is, the photosensitive module 110, the reference module 130, and the display module are all transistors, the photosensitive module 110 and the display module can be prepared simultaneously, reducing unnecessary processes and making the process flow simple.

[0086] In some embodiments, the display screen 100 further includes: a liquid crystal layer 11 and a color filter layer 12 stacked in sequence on the surface of the substrate 10.

[0087] In an embodiment of the present disclosure, the liquid crystal layer 11 is located between the substrate 10 and the color filter layer 12, and the arrangement of liquid crystal molecules can be controlled by an electric field to adjust the light transmittance to achieve grayscale display. The color filter layer 12 includes a color resist layer (RGB three-color filter units) and a black matrix (BM), etc., for separating colors and preventing light leakage.

[0088] In an embodiment of the present disclosure, the display screen 100 further includes a polarizer located above the surface of the color filter layer 12 for controlling the polarization direction of light and cooperating with the liquid crystal layer 11 to achieve light modulation. A backlight module is located below the liquid crystal layer 11 for providing a uniform white light source (such as an LED backlight), and the light penetrates the liquid crystal layer 11 after being diffused by a light guide plate and an optical film. A packaging and protection layer is used to seal the liquid crystal layer 11 to prevent external contamination. In some other embodiments, the display screen 100 may further include a quantum dot film (QD-LCD) or a light extraction layer (OLED), etc., to improve the color gamut.

[0089] In an embodiment of the present disclosure, since a photosensing module 110 is provided in the display screen 100, the intensity of ambient light can be obtained according to the photosensing module 110, and then the brightness of the display area can be adjusted according to the intensity of the ambient light; that is, the stronger the intensity of the ambient light, the higher the display brightness; otherwise, vice versa.

[0090] Further, since the gate structure in the photosensing module 110 has at least one opening, the light of the ambient light can be diffracted to the channel structure through the opening C, so that carriers (free electrons and holes) can be generated in the channel structure, and then the conductivity of the channel structure can be changed to realize the detection of the light intensity. The photosensing module 110 is applicable to a high-resolution low-temperature polysilicon display screen, so that a high-resolution display screen with an integrated light sensing function can be obtained.

[0091] An embodiment of the present disclosure further provides a method for forming a display screen 100, as Figure 8 shown, the method for forming the display screen 100 includes:

[0092] Step S110: Provide an initial substrate 10'.

[0093] Here, please refer to Figure 9 , the material of the initial substrate 10' can be low-temperature polysilicon; it can also be amorphous silicon; the present disclosure does not limit this.

[0094] Step S120: Perform an etching process on the initial substrate 10' to form a substrate 10, and a photosensing module 110 and a first chip 120 located on the surface of the substrate 10.

[0095] Please refer to Figure 10 , perform etching on the initial substrate 10' to form a substrate 10 and an initial first active layer 111' located on the surface of the substrate 10.

[0096] The etching (removal) process involved in the embodiment of the present disclosure includes but is not limited to: dry etching, wet etching, and combinations thereof.

[0097] Please refer to Figure 11, an initial first gate oxide layer and an initial first gate metal layer are sequentially formed above the surface of the initial first active layer 111'; the initial first gate oxide layer and the initial first gate metal layer constitute the initial first gate structure 112'.

[0098] In the embodiments of the present disclosure, the material of the initial first gate oxide layer may be silicon oxide or other suitable materials; the material of the initial first gate metal layer may be any material with good electrical conductivity, such as any one of titanium (Ti), titanium nitride (TiN), tungsten nitride (WN), tungsten (W), cobalt (Co), platinum (Pt), palladium (Pd), ruthenium (Ru), and copper (Cu).

[0099] The forming process involved in the embodiments of the present disclosure includes a deposition process; among them, the deposition process includes but is not limited to: Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), Plasma Enhanced CVD (PECVD), sputtering, Metal Organic Chemical Vapor Deposition (MOCVD), Atomic Layer Deposition (ALD), and combinations thereof, etc.

[0100] Please refer to Figure 12 , the initial first gate structure is etched to form at least one opening C (including opening C1, opening C2, and opening C3), and the remaining initial first gate structure constitutes the first gate structure 112. Among them, the first gate structure 112 includes: a first gate oxide layer and a first gate metal layer sequentially located on the middle surface of the initial first active layer 111'; the opening C may penetrate the first gate metal layer 112b (for the structure, please refer to Figure 3 ), or may penetrate both the first gate metal layer 112b and the first gate oxide layer 112a simultaneously (for the structure, please refer to Figure 4 ).

[0101] Please refer to Figure 13 , both ends of the initial first active layer 111' are doped to form the first active layer 111, and the first active layer 111 includes a first channel structure 111b and first source / drain electrodes (111a and 111c) located on both sides of the channel structure. Among them, when the first channel structure 111b is an N-type channel, P-type doping can be performed in the first source / drain electrodes (111a and 111c); or when the first channel structure 111b is a P-type channel, N-type doping can be performed in the first source / drain electrodes (111a and 111c).

[0102] It should be noted that, please continue to refer to Figure 13 , when doping the initial first active layer 111' (i.e., the first source-drain), when the set mask can completely cover the first channel structure 111b, in this way, no doping ions will be doped into the first channel structure 111b. In other embodiments, when doping the initial first active layer 111' (i.e., the first source-drain), the first gate structure 112 (i.e., the first gate metal layer) can be used as a mask, in this way, part of the doping ions will be doped into the first channel structure 111b exposed by the opening C (for the structure, please refer to Figure 3 and Figure 4 ); due to the small size of the opening C, even if part of the ions are doped into the first channel structure 111b, it will not affect the photo-generated carriers generated in the first channel structure 111b.

[0103] In the embodiments of the present disclosure, the photosensitive module 110 includes a first active layer 111 and a first gate structure 112 located on the surface of the first active layer 111. Since the first gate structure 112 has at least one opening C, the light of the ambient light can be diffracted through the opening C onto the first channel structure 111b, that is, the first channel structure 111b can receive the light transmitted from the first gate structure 112, so that carriers (free electrons and holes) can be generated in the first channel structure 111b. In this way, the concentration of free electrons or holes in the first channel structure 111b can be changed, and further the conductivity of the first channel structure 111b can be changed, realizing the detection of the light intensity.

[0104] In the embodiments of the present disclosure, the method for forming the display screen further includes: while forming the photosensitive module 110, forming a reference module 130 (for the structure, please refer to Figure 5 and Figure 6 ) and a display module, and the forming method thereof is similar to that of the photosensitive module 110. Please refer to the forming method of the photosensitive module 110 for understanding, and details will not be described here.

[0105] In the embodiments of the present disclosure, the method for forming the display screen further includes: forming a second chip on the surface of the substrate 10.

[0106] In the embodiments of the present disclosure, the first chip 120 and the second chip can be the same chip or different chips. The first chip 120 and the second chip can be mounted on the edge of the glass substrate through a conductive adhesive or metal bumps (Bumping), and the first chip 120 is electrically connected to the photosensitive module 110 and the reference module 130, the first chip 120 and the second chip are electrically connected, and the second chip and the display module are electrically connected through metal wires.

[0107] In an embodiment of the present disclosure, the method for forming a display screen further includes: forming a liquid crystal layer 11 and a color filter layer 12 stacked in sequence above the surface of a substrate 10 (for the structure, please refer to Figure 7 ).

[0108] In an embodiment of the present disclosure, since the photosensing module 110, the reference module 130, and the display module are all integrated on the surface of the substrate 10, the complexity of metal wiring is reduced in this way; at the same time, since the structures of the photosensing module 110, the reference module 130, and the display module are similar, that is, the photosensing module 110, the reference module 130, and the display module are all transistors, the photosensing module 110 and the display module can be prepared simultaneously, unnecessary processes are reduced, and the process flow is simplified.

[0109] The display screen formed in an embodiment of the present disclosure is similar to the display screen provided in the above embodiment. For technical features not exhaustively disclosed in the embodiment of the present disclosure, please refer to the above embodiment for understanding and will not be elaborated here.

[0110] In addition, an embodiment of the present disclosure further provides an electronic device 200, as Figure 14 shown, the electronic device 200 includes: a display screen 100; a controller (not shown); the display screen 100 includes: a first chip 120 and a photosensing module 110; the photosensing module 110 (please refer to Figure 2 ), configured to sense ambient light and output a sensing signal, including a first active layer 111, and a first gate structure 112 located above the first active layer 111 and parallel to the first active layer 111; the first gate structure 112 has at least one opening, so that the light of the ambient light diffracts through the opening to a region parallel to and opposite to the first active layer 111; the first chip 120, connected to the photosensing module 110 and the controller, is configured to determine the intensity of the ambient light according to the sensing signal and feedback the intensity of the ambient light to the controller.

[0111] In an embodiment of the present disclosure, the electronic device may be any product or component with a display function such as a mobile phone, a tablet computer, a flexible display device, a television, and a monitor, and no specific limitation is made thereto.

[0112] The specific implementation of the electronic device provided in an embodiment of the present disclosure is based on the display screen disclosed in the above embodiment and will not be elaborated here.

[0113] In several embodiments provided by the present disclosure, it should be understood that the disclosed structures and methods can be implemented in a non-targeted manner. The structural embodiments described above are merely illustrative. For example, the division of units is only a logical function division. In actual implementation, there may be other division methods. For example, multiple units or components can be combined, or can be integrated into another system, or some features can be ignored or not executed. In addition, the couplings between the various components shown or discussed are either direct couplings or indirect couplings.

[0114] The features disclosed in several method or structural embodiments provided by the present disclosure can be arbitrarily combined without conflict to obtain new method embodiments or structural embodiments.

[0115] The above are only some embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present disclosure can easily think of changes or substitutions, which should all be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

1. A display screen, comprising: The first chip and the photosensitive module; The photosensitive module is used to sense ambient light and output a sensing signal, and includes a first active layer and a first gate structure located above the first active layer and parallel to the first active layer; The first gate structure has at least one opening, so that the ambient light is diffracted through the opening to the area of ​​the first active layer parallel to and opposite to the first gate structure; The first chip is connected to the photosensitive module and is used to determine the intensity of the ambient light according to the sensing signal.

2. The display screen according to claim 1, further comprising: Reference module; The reference module is used to sense non-ambient light and output a reference signal, and includes a second active layer, and a second gate structure located above the second active layer and parallel to the second active layer; a shielding member is arranged above the reference module; The first chip is also connected to the reference module and is used to calibrate the intensity of the ambient light according to the reference signal.

3. The display screen according to claim 2, comprising: First and second regions; The first area is a non-display area of ​​the display screen, and the second area is a display area of ​​the display screen; The first chip and the photosensitive module are arranged in the first area.

4. The display screen according to claim 3, wherein the second area comprises: The display module is connected to the second chip and is used to change the brightness of the corresponding pixel of the display module according to the instruction of the control signal.

5. The display screen according to claim 4, comprising a substrate; The photosensitive module is arranged on the surface of the substrate in the first area; The display module is arranged on the surface of the substrate in the second area. 6 . The display screen according to claim 3 , wherein the first area is located at an edge of the display screen and wraps the second area therein.

7. The display screen according to claim 2, wherein the shape of the opening is a closed figure; and / or the shape of the opening is an open figure extending from one side of the gate structure to the other side.

8. The display screen according to claim 5, further comprising: A liquid crystal layer and a color filter layer are sequentially stacked on the surface of the substrate. 9 . The display screen according to claim 2 , wherein the first gate structure in the photosensitive module and the second gate structure in the reference module have the same structure.

10. An electronic device, comprising: Display screen; Controller; The display screen comprises: The first chip and the photosensitive module; The photosensitive module is used to sense ambient light and output a sensing signal, and includes a first active layer and a first gate structure located above the first active layer and parallel to the first active layer; the first gate structure has at least one opening so that the ambient light is diffracted through the opening to the area of ​​the first active layer parallel to and opposite to the first gate structure; The first chip is connected to the photosensitive module and the controller, and is used to determine the intensity of the ambient light according to the sensing signal and feed back the intensity of the ambient light to the controller.

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