Heat conduction structure and manufacturing method thereof, heat conduction system, chip packaging structure and electronic equipment

Abstract

The embodiment of the invention provides a heat conduction structure and a manufacturing method thereof, a heat conduction system, a chip packaging structure and electronic equipment. A second organic material in the heat conduction structure is diffused to the outer surface of the heat conduction structure, the second organic material diffused outwards forms a bonding layer between the heat conduction structure and the heating element and / or between the heat conduction structure and the radiator, and the bonding layer connects the heat conduction structure with the heating element and / or connects the heat conduction structure with the radiator. The heat conduction structure is ensured to be in close contact with the surface of the heating element / radiator, so that the problem of overtemperature of the heating element caused by layering of an interface between the heat conduction structure and the heating element / radiator in the use process is avoided; besides, local micropores between the heat conduction structure and the heating element and between the heat conduction structure and the radiator can be filled with the second organic material which diffuses outwards, and the micro wettability of the heat conduction structure is improved, so that the interface contact thermal resistance is reduced, and the application thermal resistance of the heat conduction structure is reduced.

Description

[0001] This application is a divisional application. The application number of the original application is 202010625164.9, the filing date of the original application is July 1, 2020, and the entire content of the original application is incorporated herein by reference. Technical Field

[0002] Embodiments of the present application relate to the technical field of heat conduction, and particularly to a heat conduction structure, a manufacturing method thereof, a heat conduction system, a chip packaging structure, and an electronic device. Background Art

[0003] As electronic devices continuously integrate more powerful functions into smaller components, temperature control has become one of the crucial challenges in design, that is, how to effectively dissipate more heat generated by a larger unit power when the architecture is tightened and the operating space is getting smaller is an urgent problem to be solved.

[0004] Currently, the heat generated by a chip is mainly dissipated by transferring it to a radiator through a thermal pad. Specifically, the thermal pad is disposed on the chip, and the other side of the thermal pad facing away from the chip is connected to the radiator. Among them, the chip and the thermal pad, and the thermal pad and the radiator are connected by an adhesive layer.

[0005] However, during the application of the above thermal pad, as the temperature changes, the adhesive force between the chip and the thermal pad, and between the thermal pad and the radiator decreases, and delamination is likely to occur between the thermal pad and the chip and / or between the thermal pad and the radiator, resulting in too high a chip junction temperature due to the inability to dissipate the heat on the chip in time. Summary of the Invention

[0006] Embodiments of the present application provide a heat conduction structure, a manufacturing method thereof, a heat conduction system, a chip packaging structure, and an electronic device, which improve the bonding strength between the heat conduction structure and the heating element and the radiator, reduce the contact thermal resistance between the heat conduction structure and the heating element and the radiator, enhance the heat conduction effect of the heat conduction structure, and solve the problem that the existing thermal pad is prone to delamination with the chip and / or the radiator, resulting in too high a chip junction temperature.

[0007] In a first aspect of the embodiments of the present application, a heat conduction structure is provided for transferring the heat generated by a heating element to a radiator, including:

[0008] A plurality of heat conduction films and one or more dielectric layers, the heat conduction films and the dielectric layers are arranged alternately;

[0009] One end of a plurality of the heat conduction films faces the heating element, and the other end of a plurality of the heat conduction films faces the radiator;

[0010] The dielectric layer at least includes: a first organic material and a second organic material located in the first organic material;

[0011] The first organic material is used to bond two adjacent heat-conducting films.

[0012] The second organic material is used to diffuse toward the outer surface of the heat-conducting structure when the heat-conducting structure is at a preset temperature or a preset pressure, and the second organic material diffusing outward forms at least an adhesive layer between the heat-conducting structure and the heating element and / or between the heat-conducting structure and the radiator. The adhesive layer is used to connect the heat-conducting structure to the heating element and / or connect the heat-conducting structure to the radiator.

[0013] In the heat-conducting structure provided by the embodiment of the present application, the heat-conducting films and the dielectric layers are alternately arranged, one end of the heat-conducting film faces the heating element, and the other end faces the radiator. The dielectric layer at least includes a first organic material and a second organic material located in the first organic material. The second organic material diffuses toward the outer surface of the heat-conducting structure at a preset temperature or a preset pressure. The second organic material diffusing outward forms at least an adhesive layer between the heat-conducting structure and the heating element and / or between the heat-conducting structure and the radiator. The adhesive layer connects the heat-conducting structure to the heating element and / or connects the heat-conducting structure to the radiator, ensuring that the heat-conducting structure maintains close contact with the surface of the heating element / radiator, thereby avoiding the problem that the interface between the heat-conducting structure and the heating element / radiator delaminates during use, resulting in overheating of the heating element. In addition, the second organic material diffusing outward can fill the local micropores between the heat-conducting structure and the heating element and between the heat-conducting structure and the radiator, improving the microscopic wettability of the heat-conducting structure, thereby reducing the interfacial contact thermal resistance and reducing the application thermal resistance of the heat-conducting structure.

[0014] Moreover, the second organic material can fill the local micropores or gaps between the heat-conducting structure and the heating element and / or between the heat-conducting structure and the radiator, so that the contact area between the generated adhesive layer and the heating element / radiator increases, and the adhesive force is greater.

[0015] In a possible implementation manner, the preset temperature is greater than or equal to 35 °C.

[0016] In a possible implementation manner, the preset pressure is greater than or equal to 5 psi.

[0017] In a possible implementation, the second organic material that diffuses out forms an adhesive layer with van der Waals forces, chemical bond binding forces, or biting forces at least between the heat conduction structure and the heating element and / or between the heat conduction structure and the heat sink. In this way, the purpose of tightly bonding the heat conduction structure and the heating element and / or the heat conduction structure and the heat sink is achieved. Moreover, the higher the temperature of the heating element, the more the second organic material in the heat conduction structure diffuses outwards. Thus, the bonding force between the heat conduction structure and the heating element and / or between the heat conduction structure and the heat sink is greater, thereby avoiding the problem of delamination between the heat conduction structure and the heating element and / or between the heat conduction structure and the heat sink due to excessive temperature.

[0018] In a possible implementation, at the preset temperature or the preset pressure, the second organic material diffuses through the body of the first organic material.

[0019] In a possible implementation, the first organic material is in a solid or semi-solid state, and the second organic material is in a liquid or semi-solid state.

[0020] In a possible implementation, the adhesive force between the adhesive layer and the heat sink, and / or the adhesive force between the adhesive layer and the heating element, is greater than the cohesive force of the dielectric layer. This ensures that even if the heat conduction structure is stretched and damaged, the heat conduction structure and the heating element / heat sink still remain in a bonded state, guaranteeing a strong adhesive force between the heat conduction structure and the heating element / heat sink and avoiding the problem of delamination between the heat conduction structure and the heating element / heat sink.

[0021] In a possible implementation, the second organic material is a material that undergoes a dehydration condensation reaction or a polymerization reaction with at least a partial area on the outer surface of the heating element and / or the heat sink facing the heat conduction structure under preset reaction conditions. The preset reaction conditions include reaction temperature, reaction humidity, or reaction medium. The reaction temperature is greater than or equal to 35 °C, and the reaction humidity is greater than or equal to 10%. In this way, chemical bond binding forces are generated at the joint between the heat conduction structure and the heating element and / or between the heat conduction structure and the heat sink, avoiding the problem of delamination that occurs when the bonding strength decreases due to temperature increase when an existing thermal pad is bonded to the heating element / heat sink with an adhesive layer.

[0022] In a possible implementation, the reaction temperature is greater than or equal to 35 °C.

[0023] In a possible implementation, the reaction humidity is greater than or equal to 10%.

[0024] In a possible implementation, the second organic material includes a liquid material containing active hydroxyl groups and a liquid material containing hydrolyzable groups. In this way, the liquid material containing hydrolyzable groups in the second organic material provides hydrolyzable groups. The hydrolyzable groups undergo a hydrolysis reaction to obtain hydroxyl groups. After the hydroxyl groups reach sufficient activity, under accelerating factors such as high temperature, moisture, or the metal surface, the second organic material undergoes a dehydration condensation reaction at the metal surface between the heat-conducting structure and the heating element and / or between the heat-conducting structure and the radiator to form an adhesive layer. In this way, a chemical bond can be formed between the metal surface of the heating element and the adhesive layer, a chemical bond can be formed between the metal surface of the radiator and the adhesive layer, and an interfacial adhesion similar to chelation can be formed between the metal surface of the radiator and the adhesive layer, so that a chemical bonding force is formed between the heat-conducting structure and the heating element and / or between the heat-conducting structure and the radiator, and the adhesion is more reliable and delamination is not likely to occur.

[0025] In a possible implementation, the liquid material containing active hydroxyl groups includes polyols. In this way, polyols can provide hydroxyl groups. The hydrolyzable groups undergo hydrolysis, so that the liquid material containing hydrolyzable groups has hydroxyl functional groups. After the hydroxyl groups reach sufficient activity, under accelerating factors such as high temperature, moisture, or the metal surface, the liquid material containing hydroxyl functional groups undergoes a dehydration condensation reaction to form an adhesive layer.

[0026] In a possible implementation, the liquid material containing hydrolyzable groups is a silane coupling agent. After the silane coupling agent undergoes hydrolysis, when the hydroxyl groups in the second organic material reach sufficient activity, the silane coupling agent undergoes a dehydration condensation reaction to form an adhesive layer.

[0027] In a possible implementation, the polyol is at least one of butanetriol, pentaerythritol, glycerol, trimethylolethane, xylitol, or sorbitol, and the silane coupling agent is a trialkoxysilane, or the silane coupling agent is octyltriethoxysilane.

[0028] In a possible implementation, the adhesive layer formed after the second organic material undergoes a polymerization reaction has a pressure-sensitive property. In this way, the generated adhesive layer realizes adhesion between the heat-conducting structure and the heating element and / or between the heat-conducting structure and the radiator under the action of pressure.

[0029] In a possible implementation, the second organic material is an unsaturated acrylic material. In this way, the second organic material can undergo a polymerization reaction to form an adhesive layer under preset reaction conditions.

[0030] In a possible implementation, the unsaturated acrylic material is an acrylic material containing an ester group functional group, or the unsaturated acrylic material is an acrylic material containing strong hydrophilic groups such as carboxyl groups and hydroxyl groups.

[0031] In a possible implementation, the included angle formed between the side of the heat-conducting film facing the dielectric layer and the thickness direction of the heat-conducting structure is greater than 0°C and less than or equal to 45°C.

[0032] Alternatively, the included angles formed between both the side of the heat-conducting film facing the dielectric layer and the side of the heat-conducting film facing away from the dielectric layer and the thickness direction of the heat-conducting structure are greater than 0°C and less than or equal to 45°C. In this way, the heat-conducting film undergoes compressive deformation to absorb stress, thereby significantly reducing the compressive stress of the heat-conducting structure. When the heat-conducting structure is compressed by an external force, the planar dimension of the heat-conducting structure does not expand significantly, thus avoiding the short-circuit risk caused by the size expansion of the heat-conducting structure 100.

[0033] In a possible implementation, the first organic material is a polyorganosiloxane containing at least unsaturated siloxane. In this way, the first organic material contains unsaturated bonds, and the reactive functional groups can be activated by means such as heating or light irradiation, enabling the unsaturated bonds to undergo addition polymerization reactions to achieve curing.

[0034] In a possible implementation, the first organic material includes vinyl silicone oil and hydrogen-containing silicone oil, and the molecular weights of both the vinyl silicone oil and the terminal hydrogen silicone oil are less than 15,000. In this way, the vinyl silicone oil and the hydrogen-containing silicone oil can undergo addition reactions, enabling the first organic material to form an organosilicon elastic material after curing.

[0035] In a possible implementation, the hydrogen-containing silicone oil includes at least one of terminal hydrogen silicone oil and side hydrogen silicone oil.

[0036] In a possible implementation, the first organic material is an organic chemical containing acrylic acid, polyurethane, epoxy, or polyimide.

[0037] In a possible implementation, the first organic material includes 4-hydroxybutyl acrylate and divinyl adipate.

[0038] In a possible implementation, the weight percentage of the second organic material diffusing outwards in the dielectric layer is less than or equal to 50%.

[0039] In a possible implementation, the weight percentage of the second organic material in the first organic material is less than 50%.

[0040] In a possible implementation, the thickness of the adhesive layer is less than or equal to 1 μm.

[0041] In a possible implementation, the thickness of the heat-conducting structure is greater than or equal to 0.1 mm and less than or equal to 5 mm.

[0042] In a possible implementation, the thermal conductivity coefficient of the thermal conduction structure in the first direction is greater than that in the second direction, and the thermal conductivity coefficient of the thermal conduction structure in the third direction is greater than that in the second direction, where the first direction is perpendicular to the side of the heating element facing the thermal conduction structure, the second direction is perpendicular to the side of the thermal conduction film facing the dielectric layer, and the third direction is perpendicular to the first direction and the second direction. In this way, when the heating element and the radiator are located on both sides of the thermal conduction structure along the first direction (i.e., the Z direction), due to the relatively large thermal conductivity coefficient of the thermal conduction structure in the first direction, it is ensured that the heat generated by the heating element is quickly transferred to the radiator by the thermal conduction structure, thereby achieving the purpose of quickly dissipating heat from the heating element.

[0043] In a possible implementation, the ratio of the thermal conductivity coefficient of the thermal conduction structure in the first direction to that in the second direction is greater than or equal to 5.

[0044] In a possible implementation, the thermal conductivity coefficient of the thermal conduction structure in the first direction is higher than or equal to 35 W / mk.

[0045] In a possible implementation, the thickness of each thermal conduction film is greater than or equal to 7 μm and less than or equal to 200 μm.

[0046] In a possible implementation, the thermal conduction film is a compressible thermal conduction film. In this way, when the thermal conduction structure bears compressive stress, the stress can be transmitted to the internal thermal conduction film, and the compressive stress can be reduced by the compressive deformation of the thermal conduction film. After the thermal conduction structure is compressed, the planar dimension of the thermal conduction structure does not expand significantly, and the density of the corresponding thermal conduction structure increases, avoiding the risk of short circuit caused by the expansion of the planar dimension when the thermal conduction structure is compressed.

[0047] In a possible implementation, the density of the compressible thermal conduction film is 1.2 - 1.95 g / cm 3 。

[0048] In a possible implementation, the thermal conduction film is a graphene film or a graphite film. In this way, when the thermal conduction film is a graphene film, the graphene film has compressibility, ensuring that the thermal conduction film is a compressible thermal conduction film.

[0049] The second aspect of the present application provides a heat conduction system, including a heating element and the heat conduction structure described above, and the heat conduction structure is used to transfer the heat from the heating element. By including the above heat conduction structure, the second organic material in the heat conduction structure diffuses outwards to form an adhesive layer with van der Waals force, chemical bond force or biting force between the heating element and the heat conduction structure. The adhesive layer tightly connects the heating element and the heat conduction structure, avoiding the problem of delamination between the heating element and the heat conduction structure.

[0050] In a possible implementation manner, a heat sink is further included, and the heat conduction structure is located between the heating element and the heat sink, and the heat conduction structure is used to transfer the heat from the heating element to the heat sink. In this way, the second organic material in the heat conduction structure diffuses outwards to form an adhesive layer with van der Waals force, chemical bond force or biting force between the heating element and the heat conduction structure and between the heating element and the heat sink. The adhesive layer tightly connects the heating element and the heat conduction structure and between the heat conduction structure and the heat sink.

[0051] The third aspect of the present application provides a chip packaging structure, at least including: a chip disposed on a packaging carrier, a packaging heat dissipation cover, and the heat conduction structure described in any one of the above, and the heat conduction structure is located between the chip and the packaging heat dissipation cover;

[0052] And at a preset temperature or preset pressure, the second organic material in the heat conduction structure diffuses outwards to between the heat conduction structure and the chip and / or between the heat conduction structure and the packaging heat dissipation cover and forms an adhesive layer, and the heat conduction structure is connected to the chip and / or between the heat conduction structure and the packaging heat dissipation cover through the adhesive layer.

[0053] By including the above heat conduction structure in the chip packaging structure, an adhesive layer is formed between the heat conduction structure and the chip and / or between the heat conduction structure and the packaging heat dissipation cover. During the generation process of the adhesive layer, a chemical bonding force is formed at the joint between the heat conduction structure and the chip and / or between the heat conduction structure and the packaging heat dissipation cover, ensuring that the heat conduction structure maintains a tight combination with the surface of the chip / package heat dissipation cover, thereby avoiding the problem of chip overheating caused by delamination at the interface between the heat conduction structure and the chip / package heat dissipation cover during use. In addition, the outwardly diffused second organic material can fill the local micropores between the heat conduction structure and the chip and / or between the heat conduction structure and the packaging heat dissipation cover, improving the microscopic wettability of the heat conduction structure, thereby reducing the interfacial contact thermal resistance, reducing the application thermal resistance of the heat conduction structure, and achieving the purpose of good heat dissipation for the chip.

[0054] In a possible implementation, it further includes: a fixed frame, which is located between the encapsulation carrier board and the encapsulation heat dissipation cover, and the fixed frame, the encapsulation carrier board and the encapsulation heat dissipation cover enclose a cavity, and the chip and the heat conduction structure are located in the cavity.

[0055] In a possible implementation, the fixed frame and the encapsulation heat dissipation cover are tightly connected by an elastic fastener. After the fixed frame and the encapsulation heat dissipation cover are connected, there is a compressible allowance between the fixed frame and the encapsulation heat dissipation cover. Thus, when a force is applied to the encapsulation heat dissipation cover, a pressure can be applied to the heat conduction structure. Under the action of the pressure, the second organic material diffuses outward and undergoes a chemical reaction to form an adhesive layer.

[0056] Alternatively, the fixed frame and the encapsulation heat dissipation cover are integrated. In this way, when encapsulating, connecting the encapsulation carrier board and the fixed frame can complete the encapsulation, improving the encapsulation efficiency. Moreover, since the fixed frame and the encapsulation heat dissipation cover are integrated, there is no assembly gap between the fixed frame and the encapsulation heat dissipation cover. Therefore, after encapsulation, it is avoided that water vapor enters the cavity enclosed by the encapsulation carrier board, the encapsulation heat dissipation cover and the fixed frame through the assembly gap between the fixed frame and the encapsulation heat dissipation cover and affects the chip.

[0057] In a possible implementation, the fixed frame and the encapsulation carrier board are tightly connected.

[0058] The fourth aspect of the embodiments of the present application provides an electronic device, which at least includes: the chip encapsulation structure described in any one of the above. In this way, the heat generated by the operation of the chip causes the second organic material to diffuse between the heat conduction structure and the chip and / or between the heat conduction structure and the encapsulation heat dissipation cover. The outward-diffusing second organic material undergoes a chemical reaction to form an adhesive layer, and the adhesive layer connects the heat conduction structure to the chip and / or the heat conduction structure to the encapsulation heat dissipation cover. Thus, the heat generated by the chip is transferred to the encapsulation heat dissipation cover through the heat conduction structure, and the encapsulation heat dissipation cover transfers the heat to the outside of the electronic device by contacting the housing of the electronic device. In addition, the outward-diffusing second organic material can fill the local micropores between the heat conduction structure and the chip and / or between the heat conduction structure and the encapsulation heat dissipation cover, improving the microscopic wettability of the heat conduction structure, thereby reducing the interfacial contact thermal resistance, reducing the application thermal resistance of the heat conduction structure, and achieving the purpose of good heat dissipation for the chip in the electronic device.

[0059] The fifth aspect of the embodiments of the present application provides an electronic device, which at least includes: a housing, a heating element, a radiator and any one of the heat conduction structures provided in the housing. The heat conduction structure is located between the heating element and the radiator, and the radiator is in contact with the housing.

[0060] Thus, under high temperature or pressure, the second organic material in the heat-conducting structure diffuses between the heating element and the heat-conducting structure and / or between the heat sink and the heat-conducting structure. When the reaction conditions are reached, the second organic material undergoes a chemical reaction, generating an adhesive layer with van der Waals force, chemical bond force or biting force at the joint between the heating element and the heat-conducting structure and / or between the heat sink and the heat-conducting structure, ensuring close contact between the heat-conducting structure and the surface of the heating element / heat sink, and avoiding the problem that the interface between the heat-conducting structure and the heating element / heat sink delaminates during use, resulting in overheating of the heating element in the electronic device. In addition, the second organic material diffusing outwards can fill the local micropores between the heat-conducting structure and the heating element and between the heat-conducting structure and the heat sink, improving the microscopic wettability of the heat-conducting structure, thereby reducing the interfacial contact thermal resistance and decreasing the application thermal resistance of the heat-conducting structure. This enables the heat generated by the heating element in the electronic device to be dissipated outwards in a timely manner, avoiding the problem that the heating element cannot operate normally due to excessive temperature. Moreover, the second organic material diffusing outwards can fill the local micropores between the heat-conducting structure and the heating element and between the heat-conducting structure and the heat sink, increasing the contact area between the formed adhesive layer and the heating element / heat sink and resulting in a greater adhesive force.

[0061] In a possible implementation manner, the heat sink is in contact with the housing. In this way, the heat generated by the heating element is transferred to the heat sink through the heat-conducting structure, and the heat sink dissipates the heat to the outside of the electronic device through the housing of the electronic device, achieving the purpose of dissipating heat from the heating element in the electronic device.

[0062] A sixth aspect of the embodiments of the present application provides a method for manufacturing a heat-conducting structure, the method including:

[0063] Providing a plurality of heat-conducting films, each of the heat-conducting films having a first surface and a second surface opposite to the first surface;

[0064] Forming a dielectric layer on the first surface and the second surface of each of the heat-conducting films, the dielectric layer including a first organic material and a second organic material located in the first organic material;

[0065] Stacking and pressing the plurality of heat-conducting films formed with the dielectric layer to form a block structure;

[0066] Cutting the block structure to obtain a heat-conducting structure.

[0067] In a possible implementation manner, the cutting the block structure to obtain a heat-conducting structure includes:

[0068] Cutting the block structure along a cutting direction, and an angle is formed between the direction perpendicular to the heat-conducting film and the cutting direction, the angle being greater than or equal to 0° and less than or equal to 45°.

[0069] In a possible implementation, forming dielectric layers on the first surface and the second surface of each of the heat-conducting films includes:

[0070] Providing a first organic material and a second organic material, mixing the second organic material in the first organic material to form an organic slurry;

[0071] Coating the organic slurry on the first surface and the second surface of each of the heat-conducting films to form the dielectric layers.

[0072] In a possible implementation, providing the first organic material and the second organic material to form the organic slurry includes:

[0073] Providing vinyl silicone oil, terminal hydrogen silicone oil, side hydrogen silicone oil, and a catalyst;

[0074] Mixing the vinyl silicone oil, the terminal hydrogen silicone oil, the side hydrogen silicone oil, and the catalyst to obtain the first organic material;

[0075] Providing butanetriol and octyltriethoxysilane;

[0076] Mixing the butanetriol and the octyltriethoxysilane to obtain the second organic material;

[0077] Mixing the first organic material and the second organic material to form the organic slurry;

[0078] Alternatively, providing the first organic material and the second organic material to form the organic slurry includes:

[0079] Providing a first organic material, where the first organic material includes 4-hydroxybutyl acrylate and divinyl adipate;

[0080] Providing a second organic material, where the second organic material includes 2-ethylhexyl acrylate;

[0081] Providing an initiator, where the initiator includes a photoinitiator and a thermal initiator;

[0082] Mixing the 4-hydroxybutyl acrylate, the divinyl adipate, the 2-ethylhexyl acrylate, the photoinitiator, and the thermal initiator to obtain the organic slurry. Description of the Drawings

[0083] Figure 1 It is a schematic assembly diagram of a heat-conducting structure, a heating element, and a radiator provided in an embodiment of the present application;

[0084] Figure 2 For Figure 1Schematic diagram of the cross-sectional structure in the A-A direction;

[0085] Figure 3 Schematic diagram of the outward diffusion of the second organic material in the heat conduction structure provided by the embodiment of the present application;

[0086] Figure 4 Schematic diagram of the cross-sectional structure after the heat conduction structure provided by the embodiment of the present application is assembled with the heating element and the radiator;

[0087] Figure 5 Schematic diagram of the cross-sectional structure in the heat conduction structure provided by another embodiment of the present application;

[0088] Figure 6 Schematic diagram of the process flow of the manufacturing method of the heat conduction structure provided by another embodiment of the present application;

[0089] Figure 7A Schematic diagram of the structure of multiple heat conduction films provided by another embodiment of the present application;

[0090] Figure 7B Schematic diagram of the structure with dielectric layers formed on both surfaces of multiple heat conduction films provided by another embodiment of the present application;

[0091] Figure 7C Schematic diagram of the block structure formed by pressing multiple heat conduction films with dielectric layers formed thereon provided by another embodiment of the present application;

[0092] Figure 7D For Figure 7C Schematic diagram of the cutting of the block structure;

[0093] Figure 7E Schematic diagram of the structure of the obtained heat conduction structure;

[0094] Figure 8A Schematic diagram of the cross-section of the chip packaging structure provided by another embodiment of the present application;

[0095] Figure 8B Schematic diagram of the cross-section of the chip packaging structure provided by another embodiment of the present application;

[0096] Figure 9 Schematic diagram of the three-dimensional view of the electronic device provided by another embodiment of the present application;

[0097] Figure 10 Schematic diagram of the disassembled structure of the electronic device provided by another embodiment of the present application;

[0098] Figure 11 Schematic diagram of another disassembled structure of the electronic device provided by another embodiment of the present application.

[0099] Explanation of reference numerals:

[0100] 100 - Heat conduction structure; 10 - Heat conduction film; 20 - Dielectric layer; 21 - First organic material; 22 - Second organic material; 221 - Adhesive layer;

[0101] 200 - Heating element; 201 - Chip; 300 - Heat sink; 301 - Encapsulated heat dissipation cover;

[0102] 400 - Chip packaging structure; 401 - Fixed frame; 402 - Packaging carrier board; 403 - First pad; 404 - Second pad; 405 - Elastic fastener; 500 - Mobile phone; 510 - Housing; 501 - Display screen; 502 - Rear cover; 5021 - Inner surface; 520 - Circuit board. Detailed implementation manners

[0103] The terms used in the implementation manner part of this application are only used to explain the specific embodiments of this application, rather than aiming to limit this application. The implementation manners of the embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0104] Application thermal resistance: It refers to the comprehensive thermal resistance of the heat conduction material during application. The application thermal resistance can be considered to be composed of the thermal resistance of the heat conduction material body and the interfacial contact thermal resistance between the heat conduction material and the two contact surfaces. The thermal resistance of the heat conduction material body is mainly determined by the thermal conductivity and application thickness of the heat conduction material, and the interfacial thermal resistance is affected by many factors such as the characteristics of the heat conduction material itself, pressure, and roughness.

[0105] The embodiments of this application provide a heat conduction structure. By at least arranging a dielectric layer between adjacent heat conduction films, the dielectric layer at least includes a first organic material and a second organic material located in the first organic material. The second organic material diffuses towards the outer surface of the heat conduction structure at a preset temperature or preset pressure. The outward diffused second organic material forms an adhesive layer between the heat conduction structure and the heating element and / or between the heat conduction structure and the heat sink. The adhesive layer connects the heat conduction structure to the heating element and / or connects the heat conduction structure to the heat sink, ensuring that the heat conduction structure maintains close contact with the surface of the heating element / heat sink, thereby avoiding the problem of overheating of the heating element caused by delamination at the interface between the heat conduction structure and the heating element / heat sink during use; in addition, the outward diffused second organic material can fill the local micropores between the heat conduction structure and the heating element and / or between the heat conduction structure and the heat sink, improving the microscopic wettability of the heat conduction structure, thereby reducing the interfacial contact thermal resistance and reducing the application thermal resistance of the heat conduction structure.

[0106] The heat conduction structure provided by the embodiments of this application will be described in detail below with reference to the accompanying drawings and embodiments.

[0107] Embodiment 1

[0108] The heat conduction structure 100 provided by the embodiments of the present application can transfer the heat generated by the heat generating element 200 to the radiator 300. Refer to Figure 1 As shown, the heat conduction structure 100 is located between the heat generating element 200 and the radiator 300. After being assembled according to the Figure 1 arrow in, one side of the heat conduction structure 100 is in contact with the heat generating element 200, and the other side of the heat conduction structure 100 can be in contact with the radiator 300. In this way, the heat generated by the heat generating element 200 is transferred to the radiator 300 through the heat conduction structure 100, thereby realizing the heat dissipation of the heat generating element 200.

[0109] Among them, the heat generating element 200 can be a chip or an electronic component that generates heat. In the embodiments of the present application, the heat generating element 200 is taken as an example of a chip for illustration. The radiator 300 can be a heat dissipation plate. For example, the heat dissipation plate can be an aluminum plate, or the radiator 300 can also be a heat pipe, heat dissipation fins, a graphene sheet, or other heat dissipation components that can absorb heat.

[0110] Refer to Figure 1 As shown, the heat conduction structure 100 can include: a plurality of heat conduction films 10 and one or more dielectric layers 20, and the heat conduction films 10 and the dielectric layers 20 are alternately arranged. For example, as Figure 1 shown, a plurality of heat conduction films 10 and a plurality of dielectric layers 20 are alternately arranged in sequence along the X direction (for example, dielectric layer 20, heat conduction film 10, dielectric layer 20, heat conduction film 10, dielectric layer 20). Of course, in some other examples, a plurality of heat conduction films 10 and a plurality of dielectric layers 20 can also be alternately arranged along the Y direction. Among them, when a plurality of heat conduction films 10 and a plurality of dielectric layers 20 are alternately arranged, as Figure 1 shown, a plurality of heat conduction films 10 and a plurality of dielectric layers 20 are placed vertically.

[0111] Among them, one end of the plurality of heat conduction films 10 faces the heat generating element 200, and the other end of the plurality of heat conduction films 10 faces the radiator 300. For example, as Figure 1 shown, the heat conduction structure 100 is located between the heat generating element 200 and the radiator 300 in the Z direction. The bottom ends of the plurality of heat conduction films 10 face the heat generating element 200, and the top ends of the plurality of heat conduction films 10 face the radiator 300. Of course, in some other examples, the heat conduction structure 100 can also be located between the heat generating element 200 and the radiator 300 in the Y direction. The left ends of the plurality of heat conduction films 20 face the heat generating element 200, and the right ends of the plurality of heat conduction films 20 face the radiator 300.

[0112] Among them, it should be noted that when a plurality of heat conduction films 10 and dielectric layers 20 are alternately arranged to form a heat conduction structure, one or more dielectric layers 20 can be located between two adjacent heat conduction films 10, or as Figure 1 shown, a plurality of heat conduction films 10 are located between two adjacent dielectric layers 20.

[0113] In the embodiments of the present application, as shown in Figure 2 , the dielectric layer 20 may at least include: a first organic material 21 and a second organic material 22 located in the first organic material 21. For example, Figure 1 , the second organic material 22 is mixed in the first organic material 21. The first organic material 21 bonds two adjacent heat-conducting films 10, and a plurality of heat-conducting films 10 form an integral structure through the first organic material 21.

[0114] It should be noted that the dielectric layer 20 may further include a functional additive, and the functional additive may be, for example, a nano filler for improving the bonding strength.

[0115] It should be noted that the second organic material 22 being located in the first organic material 21 may mean that the second organic material 22 is completely located within the first organic material 21, or a part of the second organic material 22 is located within the first organic material 21 and a part of the second organic material 22 is exposed outside the first organic material 21.

[0116] It should be noted that the first organic material 21 bonding two adjacent heat-conducting films 10 specifically means that the first organic material 21 becomes solid or colloidal after curing to connect two adjacent heat-conducting films 10. Among them, during the curing process of the first organic material 21, the second organic material 22 does not participate in the curing reaction. For example, during the curing process of the first organic material 21, the second organic material 22 remains in a liquid or gel state.

[0117] Among them, in the heat-conducting structure 100 under a preset temperature or a preset pressure, the second organic material 22 in the first organic material 21 diffuses toward the outer surface of the heat-conducting structure 100. For example, the second organic material 22 diffuses through the first organic material 21 to both end faces of the heat-conducting structure 100 under high temperature (for example, greater than or equal to 35 °C) or pressure (the diffusion direction is shown by the dotted arrow in Figure 3 ), so that the second organic material 22 is present on both surfaces of the heat-conducting structure 100 facing the heating element 200 and / or facing the radiator 300.

[0118] Among them, when the outward-diffusing second organic material 22 meets the preset reaction conditions (the preset reaction conditions are, for example, reaction conditions such as high temperature, moisture, and metal surface), at least a bonding layer 221 is formed between the heat-conducting structure 100 and the heating element 200 and / or between the heat-conducting structure 100 and the radiator 300 (as shown in Figure 4 ), for example, the outward-diffusing second organic material 22 may form a bonding layer 221 between the heat-conducting structure 100 and the heating element 200, or the outward-diffusing second organic material 22 may form a bonding layer 221 between the heat-conducting structure 100 and the radiator 300, or, as Figure 4As shown, the outward-diffusing second organic material 22 can form an adhesive layer 221 both between the heat-conducting structure 100 and the heat sink 300 and between the heat-conducting structure 100 and the heat sink 300.

[0119] It should be noted that when the outward-diffusing second organic material 22 can form an adhesive layer 221 between the heat-conducting structure 100 and the heat-generating element 200, and the adhesive layer 221 connects the heat-conducting structure 100 and the heat-generating element 200. At this time, the heat-conducting structure 100 and the heat sink 300 can be connected by, for example, an adhesive layer. In this way, it is ensured that delamination is not likely to occur between the heat-conducting structure 100 and the heat-generating element 200, thus solving the problem that the existing heat-conducting pad and the chip are prone to delamination, resulting in too high a temperature of the chip.

[0120] Alternatively, when the outward-diffusing second organic material 22 can form an adhesive layer 221 between the heat-conducting structure 100 and the heat sink 300, and the adhesive layer 221 connects the heat-conducting structure 100 and the heat sink 300. At this time, the heat-conducting structure 100 and the heat-generating element 200 can be connected by an adhesive layer. In this way, the problem that the heat-conducting pad and the heat sink are prone to delamination, resulting in too high a temperature of the chip due to the inability to dissipate heat in time, is solved.

[0121] Among them, in the embodiment of the present application, since the heat-generating element 200 generates heat during operation, when the heat-conducting structure 100 is located between the heat-generating element 200 and the heat sink 300, the temperature at the joint between the heat-generating element 200 and the heat-conducting structure 100 is higher than the temperature at the joint between the heat-conducting structure 100 and the heat sink 300. Therefore, when the second organic material 22 in the heat-conducting structure 100 diffuses outward due to high temperature, it will first diffuse to the joint between the heat-generating element 200 and the heat-conducting structure 100, thus ensuring that the outward-diffusing second organic material 22 forms an adhesive layer 221 at the joint between the heat-generating element 200 and the heat-conducting structure 100. As the heat generated by the heat-generating element 200 increases, the second organic material 22 diffuses between the heat sink 300 and the heat-conducting structure 100, and the second organic material 22 diffusing between the heat sink 300 and the heat-conducting structure 100 forms an adhesive layer 221, and the adhesive layer 221 bonds the heat sink 300 and the heat-conducting structure 100. Moreover, the more heat generated by the heat-generating element 200, the more the outward-diffusing second organic material 22, and thus more adhesive layers 221 are generated, making the bonding between the heat-generating element 200 and the heat-conducting structure 100 and between the heat sink 300 and the heat-conducting structure 100 more reliable.

[0122] In the embodiment of the present application, when the second organic material 22 that diffuses outwards meets the preset reaction conditions, a chemical reaction can occur to form an adhesive layer 221. That is, the second organic material 22 generates an adhesive layer 221 between the heat-conducting structure 100 and the heating element 200 and / or between the heat-conducting structure 100 and the radiator 300 through a chemical reaction. During the generation of the adhesive layer 221, since the second organic material 22 contacts the surfaces of the heating element 200 and / or the radiator 300 facing the heat-conducting structure 100, therefore, a chemical bonding force is generated between the generated adhesive layer 221 and the surfaces of the heating element 200 and / or the radiator 300 facing the heat-conducting structure 100, making the combination between the heat-conducting structure 100 and the heating element 200 and / or between the heat-conducting structure 100 and the radiator 300 tighter and less likely to delaminate. Moreover, the higher the temperature generated by the heating element 200, the more the second organic material 22 diffuses outwards, thereby making the bonding between the heat-conducting structure 100 and the heating element 200 and / or between the heat-conducting structure 100 and the radiator 300 more firm.

[0123] It should be noted that the outward diffusion of the second organic material 22 specifically refers to the second organic material 22 moving outwards through the first organic material 21.

[0124] Therefore, for the heat-conducting structure 100 provided in the embodiment of the present application, when it is not at a high temperature (for example, greater than or equal to 35°C) or under pressure, the second organic material 22 in the heat-conducting structure 100 is located inside the first organic material 21 and is in a liquid state or semi-solid state due to the lack of reaction conditions. When the heat-conducting structure 100 is applied between the heating element 200 and the radiator 300 and a connection is required between the heat-conducting structure 100 and the heating element 200 and the radiator 300, diffusion conditions are provided (for example, high temperature or pressure is applied to the heat-conducting structure 100 through the heating element 200 and the radiator 300). In this way, the second organic material 22 in the heat-conducting structure 100 diffuses outwards under high temperature or pressure, and the diffused second organic material 22 is located between the heat-conducting structure 100 and the heating element 200 and / or between the heating element 200 and the radiator 300.

[0125] When the reaction conditions are met, for example, when acceleration factors such as high temperature, moisture, and metal surface are present, the diffused second organic material 22 will undergo a chemical reaction, and an adhesive layer with chemical bonding force will be formed at the joint between the heat-conducting structure 100 and the heating element 200 and / or between the heat-conducting structure 100 and the heat sink 300. Compared with the direct adhesion through an adhesive layer between the heat-conducting pad and the heating element 200 / heat sink 300 in the prior art, in the embodiments of the present application, a chemical bonding force is formed at the joint between the heat-conducting structure 100 and the heating element 200 and / or between the heat-conducting structure 100 and the heat sink 300. In this way, the heat-conducting structure 100 and the heating element 200 and / or the heat-conducting structure 100 and the heat sink 300 are tightly connected through the generated adhesive layer. When the temperature changes, delamination is not likely to occur between the heat-conducting structure 100 and the heating element 200 and / or between the heat-conducting structure 100 and the heat sink 300.

[0126] In some examples, as the temperature of the heating element 200 rises, the second organic material 22 in the heat-conducting structure 100 will continue to diffuse outward to form an adhesive layer with chemical bonding force. Therefore, when the temperature changes, the connection between the heat-conducting structure 100 and the heating element 200 and between the heat-conducting structure 100 and the heat sink 300 will be even more reliable.

[0127] Therefore, when the heat-conducting structure 100 provided in the embodiments of the present application is arranged between the heating element 200 and the heat sink 300, the purpose of generating a chemical bonding force between the heat-conducting structure 100 and the heating element 200 and / or between the heat-conducting structure 100 and the heat sink 300 is achieved, ensuring that the heat-conducting structure 100 is in close contact with the surface of the heating element 200 / heat sink 300, and avoiding the problem that the heating element 200 overheats due to delamination at the interface between the heat-conducting structure 100 and the heating element 200 / heat sink 300 during use.

[0128] In addition, the diffused second organic material 22 can fill the local micropores or gaps between the heat-conducting structure 100 and the heating element 200 and / or between the heat-conducting structure 100 and the heat sink 300, improving the microscopic wettability of the heat-conducting structure 100, thereby reducing the interfacial contact thermal resistance, decreasing the application thermal resistance of the heat-conducting structure 100, and enhancing the heat-conducting effect of the heat-conducting structure 100. Moreover, the second organic material 22 can fill the local micropores or gaps between the heat-conducting structure 100 and the heating element 200 and / or between the heat-conducting structure 100 and the heat sink 300, so that the contact area between the generated adhesive layer 221 and the heating element 200 / heat sink 300 is increased and the adhesive force is greater.

[0129] It should be noted that due to the dispersed distribution of the second organic material 22 in the first organic material 21, the diffused second organic material 22 is locally distributed on the surface of the heat-conducting structure 100, in the form of particles or dots, for exampleFigure 3 As shown, in some partial regions on both sides of the heat conduction structure 100, there is a second organic material 22 that diffuses outward. Therefore, a plurality of adhesive layers 221 are formed at intervals between the heat conduction structure 100, the heating element 200, and the radiator 300 (that is, the adhesive layer does not cover the entire surface of the heat conduction structure 100). Of course, in some other examples, the second organic material 22 that diffuses outward exists on the entire surface of the heat conduction structure 100, so the formed adhesive layer completely covers one surface of the heat conduction structure 100. It should be noted that Figure 4 in order to illustrate that the formed adhesive layer 221 is granular or dot-shaped, so Figure 4 there is a gap between the heating element 200 and the radiator 300 and the two surfaces of the heat conduction structure 100. However, in actual products, both the heating element 200 and the radiator 300 are in close contact with the heat conduction structure 100, and there is no gap.

[0130] It should be noted that in the embodiments of the present application, the preset temperature can be greater than or equal to 35 °C, and the preset pressure can be greater than or equal to psi. For example, the preset pressure can be greater than or equal to 5 psi and less than or equal to 150 psi. For example, the preset pressure can be 10 - 60 psi. Or, the preset pressure can be 50 psi.

[0131] It should be noted that when the second organic material 22 in the heat conduction structure 100 diffuses outward under pressure, the first organic material 21 needs to form an elastic solid substance after curing, and the heat conduction film 10 is a compressible heat conduction film 10. In this way, the heat conduction structure 100 has compressibility. The heat conduction structure 100 is compressed under pressure, and the second organic material 22 can be extruded and diffuse outward. After the pressure is removed, the heat conduction film 10 and the solid substance formed by the cured first organic material 21 can return to the original state.

[0132] It should be noted that the thickness of the diffused second organic material 22 is often in the nanometer range. Therefore, the formed adhesive layer 221 belongs to a molecular-level binder. A molecular-level binder refers to that the extended second organic material 22 has a thickness of a single molecule or a few molecular layers on the surface of the heat conduction structure 100 and can form a chemical force bond with the contact surface. For example, the thickness of the adhesive layer is less than 1 μm.

[0133] In the embodiments of the present application, it should be noted that the first organic material 21 generally forms a solid state after curing. The second organic material 22 diffuses outward from the molecular gaps of the solid material after the first organic material 21 is cured under the action of high temperature or pressure. Therefore, to facilitate the diffusion of the second organic material 22, the first organic material 21 can be selected from materials with a low crosslinking density and large grids in the molecular chain network structure. In this way, the gaps between molecules in the cured first organic material 21 are relatively large, and the second organic material 22 (for example, small molecule materials can be selected) can easily move inside the cured first organic material 21 to achieve the purpose of outward diffusion.

[0134] In the embodiments of the present application, the second organic material 22 that diffuses outward forms at least an adhesive layer 221 having van der Waals force, chemical bond binding force or biting force between the heat conduction structure 100 and the heating element 200 and / or between the heat conduction structure 100 and the radiator 300. For example, after the second organic material 22 diffuses outward, an adhesive layer 221 is formed between the heat conduction structure 100 and the heating element 200, and during the formation of the adhesive layer 221, a binding force such as van der Waals force, chemical bond binding force or biting force is formed at the joint between the heat conduction structure 100 and the heating element 200, achieving the purpose of generating a chemical binding force between the heat conduction structure 100 and the heating element 200 and / or between the heat conduction structure 100 and the radiator 300. Moreover, the higher the temperature of the heating element 200, the more the second organic material 22 in the heat conduction structure 100 diffuses outward. In this way, the binding force between the heat conduction structure 100 and the heating element 200 and / or between the heat conduction structure 100 and the radiator 300 is greater, thus avoiding the problem of delamination between the heat conduction structure 100 and the heating element 200 and / or between the heat conduction structure 100 and the radiator 300 due to excessive temperature.

[0135] Alternatively, after the second organic material 22 diffuses outward, an adhesive layer 221 is formed between the heat conduction structure 100 and the radiator 300, and during the formation of the adhesive layer 221, a binding force such as van der Waals force, chemical bond binding force or biting force is formed at the joint between the heat conduction structure 100 and the heating element 200, achieving the purpose of generating a chemical binding force between the heat conduction structure 100 and the radiator 300 and avoiding the problem of delamination between the heat conduction structure 100 and the radiator 300 due to excessive temperature.

[0136] Alternatively, after the second organic material 22 diffuses outward, an adhesive layer 221 is formed both between the heat conduction structure 100 and the heat sink 300 and between the heat conduction structure 100 and the heat sink 300. During the formation of the adhesive layer 221, chemical bonding forces such as van der Waals forces, chemical bond bonding forces, or biting forces are formed at the joints between the heat conduction structure 100 and the heating element 200 and between the heat conduction structure 100 and the heat sink 300, making it difficult for delamination to occur between the heat conduction structure 100 and the heating element 200 and between the heat conduction structure 100 and the heat sink 300.

[0137] Among them, the biting force is specifically that the second organic material 22 diffusing outward diffuses into the uneven micropores or tiny gaps on the surface of the heating element 200 facing the heat conduction structure 100 and / or the surface of the heat sink 300 facing the heat conduction structure 100, so that a mechanical bonding force of mutual biting is formed between the generated adhesive layer 221 and the surface of the heating element 200 facing the heat conduction structure 100 and / or the surface of the heat sink 300 facing the heat conduction structure 100.

[0138] The van der Waals force is the intermolecular bonding force generated between the molecules in the second organic material 22 diffusing outward and the surface of the heating element 200 facing the heat conduction structure 100 and / or the surface of the heat sink 300 facing the heat conduction structure 100.

[0139] The chemical bond bonding force is the chemical bonding force formed by the chemical reaction of the molecules in the second organic material 22 diffusing outward with the molecules on the surface of the heating element 200 facing the heat conduction structure 100 and / or the surface of the heat sink 300 facing the heat conduction structure 100 to form chemical bonds.

[0140] In the embodiment of the present application, at a preset temperature or a preset pressure, the second organic material 22 diffuses through the body of the first organic material 21. The body of the first organic material 21 refers to the remaining material in the dielectric layer 20 after removing the second organic material 22. Among them, the molecular structure of the first organic material 21 can be a grid structure, and at the preset temperature or the preset pressure, the molecules of the second organic material 22 diffuse through the grid structure.

[0141] In a possible implementation manner, the first organic material 21 is in a solid state or a semi-solid state, and the second organic material 22 is in a liquid state or a semi-solid state. For example, when the first organic material 21 is in a solid state, the second organic material 22 is a liquid, so that the second organic material 22 can flow under high temperature or pressure, facilitating diffusion outward from the first organic material 21. Or when the first organic material 21 is in a solid state, the second organic material 22 is in a semi-solid state, or the first organic material 21 can be in a semi-solid state and the second organic material 22 is in a liquid state, so that the second organic material 22 can also flow in the first organic material 21, thereby realizing the outward diffusion of the second organic material 22.

[0142] Of course, in some other examples, the first organic material 21 can also be in a gel state, and the second organic material 22 can also be in a gel state. For example, the first organic material 21 is in a gel state and the second organic material 22 is in a semi-solid state, or the first organic material 21 is in a semi-solid state and the second organic material 22 can be in a gel state.

[0143] In some examples, the second organic material 22 can also be an organic material capable of undergoing a phase change. When the preset temperature is not reached, for example, at a low temperature, the second organic material 22 is in a solid state and becomes liquid at a high temperature (e.g., 40 - 105 °C), and diffuses outward through the first organic material 21 under temperature or pressure.

[0144] In a possible implementation, the adhesion force between the adhesive layer 221 and the heat sink 300, and / or the adhesion force between the adhesive layer 221 and the heating element 200 are both greater than the cohesive force of the dielectric layer 20 (the cohesive force refers to the breaking strength of the cured organic material against tensile deformation). For example, the adhesion force between the adhesive layer 221 and the heat sink 300 is greater than the cohesive force of the dielectric layer 20, or the adhesion force between the adhesive layer 221 and the heating element 200 is greater than the cohesive force of the dielectric layer 20, or both the adhesion force between the adhesive layer 221 and the heat sink 300 and the adhesion force between the adhesive layer 221 and the heating element 200 are greater than the cohesive force of the dielectric layer 20. This ensures that even if the heat conduction structure 100 is damaged by tension, the heat conduction structure 100 and the heating element 200 / heat sink 300 still remain in an adhesive state, ensuring a firm adhesion force between the heat conduction structure 100 and the heating element 200 / heat sink 300, and avoiding the problem of delamination between the heat conduction structure 100 and the heating element 200 / heat sink 300.

[0145] In the embodiments of the present application, the second organic material 22 is a material that undergoes a dehydration condensation reaction or a polymerization reaction with at least a part of the outer surface of the heating element 200 and / or the heat sink 300 facing the heat conduction structure 100 under preset reaction conditions, that is, when the preset reaction conditions are met, the second organic material 22 can undergo a dehydration condensation reaction or a polymerization reaction between the heating structure 200 and the heat conduction structure 100 and / or between the heat sink 300 and the heat conduction structure 100.

[0146] The following elaborates in detail on the dehydration condensation reaction that the second organic material 22 can undergo between the heating structure 200 and the heat conduction structure 100 and / or between the heat sink 300 and the heat conduction structure 100 under preset reaction conditions.

[0147] The preset reaction conditions may include: reaction temperature, reaction humidity, or reaction medium. Among them, the reaction temperature may be, for example, greater than or equal to 35 °C, and the reaction humidity is greater than or equal to 10% (i.e., there is moisture during the reaction). The reaction medium is the surface material that the second organic material 22 contacts during the reaction. In the embodiments of the present application, the reaction medium may be a metal material, that is, the surface that the second organic material 22 contacts during the reaction is a metal surface. The metal surface usually has hydroxyl groups (the metal surface is oxidized in the air to form metal oxides, and the metal oxides react with water vapor in the air to produce hydroxyl groups). Therefore, a chemical bond can be formed between the hydroxyl groups and the second organic material 22.

[0148] In the embodiments of the present application, the surfaces of the heating element 200 and the heat sink 300 are often metal surfaces. Therefore, when the second organic material 22 diffuses between the heat conduction structure 100 and the heating element 200 and / or between the heat conduction structure 100 and the heat sink 300, the metal surfaces of the heating element 200 and the heat sink 300 provide reaction conditions for the chemical reaction of the second organic material 22. The second organic material 22 undergoes a chemical reaction on the metal surfaces of the heating element 200 and the heat sink 300 and forms chemical bonds, so that a chemical bond binding force is generated between the interface of the heat conduction structure 100 and the heating element 200 / heat sink 300, thereby improving the current situation that the interface between the existing heat conduction pad and the heating element 200 / heat sink 300 has no chemical bond binding and the adhesion force is small.

[0149] In the embodiments of the present application, in order to achieve the dehydration condensation reaction of the second organic material 22, the second organic material 22 may include a liquid material containing active hydroxyl groups and a liquid material containing hydrolyzable groups, that is, the second organic material 22 is in a liquid state. Among them, the liquid material containing hydrolyzable groups in the second organic material 22 provides hydrolyzable groups. The hydrolyzable groups undergo a hydrolysis reaction to obtain hydroxyl groups. After the hydroxyl groups reach sufficient activity, the second organic material 22 undergoes a dehydration condensation reaction to form an adhesive layer 221 under acceleration factors such as high temperature, moisture, or metal surface.

[0150] Among them, during the formation of the adhesive layer 221, a chemical bond is formed between the heat conduction structure 100 and the heating element 200 / heat sink 300 (the surface of the heating element 200 / heat sink 300 is a metal surface). Among them, when the heating element 200 is a chip, the surface of the chip has hydroxyl groups and can form a chemical bond with the second organic material 22. A chemical bond is formed between the metal surface of the heat sink 300 and the second organic material 22, and an interfacial adhesion similar to chelation is formed between the metal surface of the heat sink 300 and the formed adhesive layer 221. Therefore, a chemical bonding force is formed between the heat conduction structure 100 and the heating element 200 and the heat sink 300, and the adhesion is more reliable and it is not easy to delaminate.

[0151] In a possible implementation, the liquid material containing active hydroxyl groups can be a polyol. A polyol is an alcohol containing two or more hydroxyl groups in its molecule, with the general formula C n H 2n +2-x(OH)x (x≥3). The liquid material containing hydrolyzable groups can be a silane coupling agent.

[0152] Among them, the polyol can be at least one of butanetriol, pentaerythritol, glycerol, trimethylolethane, xylitol, or sorbitol. For example, the polyol is butanetriol, and the butanetriol can be 1,2,4-butanetriol. The silane coupling agent can be a trialkoxysilane, or the silane coupling agent can be octyltriethoxysilane.

[0153] Among them, when the first organic material 21 includes butanetriol and octyltriethoxysilane, 0.5 parts of butanetriol and 0.3 parts of octyltriethoxysilane can be selected and mixed to obtain the second organic material 22. Of course, in some other examples, when butanetriol and octyltriethoxysilane are mixed, the selected parts include but are not limited to 0.5 parts and 0.3 parts.

[0154] In a possible implementation, the first organic material 21 can be a polyorganosiloxane containing at least unsaturated siloxane. In this way, the first organic material 21 contains unsaturated bonds, and the reactive functional groups can be activated by heating, light, or other means, enabling the addition polymerization reaction of the unsaturated bonds to achieve curing.

[0155] It should be noted that in order to prevent the second organic material 22 from diffusing outward at high temperatures during the heat curing process of the first organic material 21, in the embodiments of the present application, the temperature for heat curing the first organic material 21 can be lower than the temperature required for the second organic material 22 to diffuse outward, or different curing methods can be selected for the first organic material 21 and the second organic material 22. For example, the first organic material 21 is cured by UV light irradiation.

[0156] In a possible implementation, the polyorganosiloxane containing unsaturated siloxane can be vinyl silicone oil. In order to achieve the addition polymerization reaction, the first organic material 21 further includes hydrogen-containing silicone oil, and the molecular weights of both the vinyl silicone oil and the hydrogen-containing silicone oil are less than 15000. And in order to accelerate the curing reaction, a catalyst can be selected. The catalyst can be a Pt-based catalyst. Among them, the molecular formula of the vinyl silicone oil can be the following molecular formula (1):

[0157]

[0158] The hydrogen-containing silicone oil includes at least one of terminal hydrogen silicone oil and side hydrogen silicone oil. In the embodiments of the present application, the hydrogen-containing silicone oil uses terminal hydrogen silicone oil, and the molecular formula of the terminal hydrogen silicone oil can be the following molecular formula (2):

[0159]

[0160] Then, the following addition reaction occurs during the curing process of the first organic material 21:

[0161]

[0162] Among them, the viscosities of vinyl silicone oil and hydrogen-terminated silicone oil can be selected from 50 to 10,000 cps (1 cps = 1 mPa·s). For example, vinyl silicone oil with a viscosity of 50 mPa·s can be selected, and hydrogen-terminated silicone oil with a viscosity of 50 mPa·s can be selected. Among them, during configuration, 50 parts of vinyl silicone oil, 40 parts of hydrogen-terminated silicone oil, and a small amount of catalyst can be mixed evenly and heated and cured at 120 °C for 30 min to form a silicone elastic adhesive material, that is, the first organic material 21. The silicone elastic adhesive material bonds the heat-conducting film 10.

[0163] It should be noted that when the second organic material 22 is mixed in the first organic material 21, the second organic material 22 needs to be added to the first organic material 21 for mixing before the first organic material 21 is cured. And the curing methods of the first organic material 21 and the second organic material 22 are different, so as to ensure that the second organic material 22 does not participate in the curing of the first organic material 21 during the curing process of the first organic material 21. In this way, after the first organic material 21 is cured, the second organic material 22 can still maintain liquid fluidity and can diffuse outward under high temperature or pressure.

[0164] In another possible implementation, the hydrogen-containing silicone oil includes hydrogen-terminated silicone oil and side-hydrogen silicone oil, that is, the first organic material 21 can include vinyl silicone oil, catalyst, hydrogen-terminated silicone oil, and side-hydrogen silicone oil. Among them, the hydrogen-terminated silicone oil can be selected as the above formula (2), and the side-hydrogen silicone oil can be selected with a viscosity of 200 mPa·s, and the molecular formula is selected as the following formula (3):

[0165]

[0166] Then, the following addition reaction occurs among the vinyl silicone oil (1), hydrogen-terminated silicone oil (2), and side-hydrogen silicone oil (3) in the first organic material 21 during the curing process:

[0167]

[0168] Among them, (1) in the addition reaction represents formula (1), that is, vinyl silicone oil, (2) represents formula (2), that is, hydrogen-terminated silicone oil, and (3) represents formula (3), that is, hydrogen-containing silicone oil.

[0169] In a possible implementation, when the second organic material 22 is mixed in the first organic material 21, the weight percentage of the second organic material 22 in the first organic material 21 is less than 50%. For example, when configuring the organic material, 100 parts of the first organic material 211 can be selected, and the second organic material 22 is less than 50 parts, so as to ensure that the weight percentage of the second organic material 22 in the first organic material 21 is less than 50%. For example, the weight percentage of the second organic material 22 in the first organic material 21 can be 25% or less, or the weight percentage of the second organic material 22 in the first organic material 21 can be 10% or less, so as to ensure that the compressibility and resilience of the heat-conducting structure 100 after the first organic material 21 is cured are more than 50%.

[0170] In a possible implementation, the weight percentage of the second organic material 22 diffused outwards in the dielectric layer 20 is less than or equal to 50%. For example, the weight percentage of the second organic material 22 diffused outwards in the dielectric layer 20 can be 10%. Among them, the amount of the second organic material 22 diffused outwards can be specifically realized by controlling the temperature or pressure.

[0171] In a possible implementation, the thickness H of the heat-conducting structure 100 (see Figure 2 shown) is greater than or equal to 0.1 mm and less than or equal to 5 mm. For example, the thickness H of the heat-conducting structure 100 can be 0.1 mm, or the thickness H of the heat-conducting structure 100 can be 2 mm, or the thickness H of the heat-conducting structure 100 can be any value in the range of 0.2 - 0.5 mm.

[0172] In a possible implementation, the thermal conductivity of the heat-conducting structure 100 in the first direction is greater than the thermal conductivity of the heat-conducting structure 100 in the second direction, and the thermal conductivity of the heat-conducting structure 100 in the third direction is greater than the thermal conductivity of the heat-conducting structure 100 in the second direction. Among them, the first direction is the direction perpendicular to the surface of the heat-generating element 200 or the radiator 300 facing the heat-conducting structure 100. In some examples, since the surface of the heat-generating element 200 or the radiator 300 facing the heat-conducting structure 100 is often non-planar, in the embodiments of the present application, the first direction can specifically be the direction perpendicular to the orthographic projection of the surface of the heat-generating element 200 or the radiator 300 facing the heat-conducting structure 100. For example, the first direction can be Figure 1 the Z direction in. The second direction is the direction perpendicular to the surface of the heat-conducting film 10 facing the dielectric layer 20. In some examples, the surface of the heat-conducting film 10 facing the dielectric layer 20 is an inclined surface or a non-vertical surface. Therefore, in this embodiment, the second direction can specifically be the direction perpendicular to the orthographic projection of the surface of the heat-conducting film 10 facing the dielectric layer 20. For example, the second direction can be Figure 1In the X direction, the third direction is a direction perpendicular to both the first direction and the second direction. For example, the third direction can be Figure 1 the Y direction in Figure 1 . When the heating element 200 and the heat sink 300 are located on both sides of the heat conduction structure 100 along the first direction (i.e., the Z direction), since the heat conduction coefficient of the heat conduction structure 100 in the first direction is relatively large, it is ensured that the heat conduction structure 100 quickly transfers the heat generated by the heating element 200 to the heat sink 300, thereby achieving the purpose of quickly dissipating the heat of the heating element 200. Among them, the heat conduction coefficient of the heat conduction structure 100 in the first direction is equivalent to the heat conduction coefficient in the third direction. Therefore, the heating element 200 and the heat sink 300 can also be located on both sides of the heat conduction structure 100 along the third direction (i.e., the Y direction). Since the heat conduction coefficient of the heat conduction structure 100 in the third direction is relatively large, the purpose of quickly dissipating the heat of the heating element 200 is achieved in the third direction.

[0173] In a possible implementation manner, the heat conduction coefficient of the heat conduction structure 100 in the first direction is higher than or equal to 35 W / mk. For example, the heat conduction coefficient of the heat conduction structure 100 in the first direction can be 50 W / mk.

[0174] Among them, the ratio of the heat conduction coefficient of the heat conduction structure 100 in the first direction to the heat conduction coefficient of the heat conduction structure 100 in the second direction is greater than or equal to 5. For example, the ratio of the heat conduction coefficient of the heat conduction structure 100 in the first direction to the heat conduction coefficient of the heat conduction structure 100 in the second direction can be any value in 10 - 40.

[0175] In a possible implementation manner, the thicknesses of the respective heat conduction films 10 can be the same, so as to ensure that both ends of the plurality of heat conduction films 10 are located on the same plane respectively. When the heat conduction structure 100 is in contact with the surfaces of the heating element 200 and the heat sink 300, the distances between both ends of each heat conduction film 10 and the heating element 200 and the heat sink 300 are the same, ensuring the uniform heat conduction effect of the heat conduction structure 100 on the heating element 200. Of course, in some other examples, the thicknesses of the respective heat conduction films 10 can also be different.

[0176] Among them, the thickness L of each heat conduction film 10 (see Figure 2 ) is greater than or equal to 7 μm and less than or equal to 200 μm. For example, the thickness L of the heat conduction film 10 can be 50 μm, or the thickness L of the heat conduction film 10 can be 100 μm. In practical applications, the thickness L of the heat conduction film 10 is selected to be 15 μm - 50 μm.

[0177] In a possible implementation manner, when the density of the heat conduction film 10 is 1.95 - 2.05 g / cm 3When the heat-conducting film 10 is often incompressible, in the embodiments of the present application, in order to achieve the purpose of the outward diffusion of the second organic material 22 in the heat-conducting structure 100 under pressure, the heat-conducting film 10 is compressible, and the density of the heat-conducting film 10 can be 1.2 to 1.95 g / cm 3 . For example, the density of the heat-conducting film 10 can be 1.5 g / cm 3 , or the density of the heat-conducting film 10 can be 1.8 g / cm 3 . In actual use, the selected density of the heat-conducting film 10 is 1.5 to 1.8 g / cm 3 . By selecting the heat-conducting film 10 with a density of 1.2 to 1.95 g / cm 3 , the heat-conducting film 10 has compressibility, which facilitates the outward diffusion of the second organic material 22 when it is pressed by the pressure of the heat-conducting film 10.

[0178] In a possible implementation manner, the heat-conducting film 10 can be a graphene film. The graphene film is compressible. After the heat-conducting structure 100 is fabricated, when the heat-conducting structure 100 bears compressive stress, the stress can be transmitted to the internal graphene film, and the compressive stress can be reduced by the compressive deformation of the graphene film. Moreover, after the heat-conducting structure 100 is compressed, the planar size of the heat-conducting structure 100 does not expand significantly, and the density of the corresponding heat-conducting structure 100 increases. In the prior art, the heat-conducting fillers are all solid, and the fabricated heat-conducting pads will expand significantly on the four sides after compression, that is, since the density remains unchanged, the thickness of the heat-conducting pad becomes thinner after compression, and the size becomes larger at the same time. However, for the heat-conducting structure 100 provided by the embodiments of the present application, after being compressed and thinned, the actual density of the heat-conducting structure 100 increases, and the size of the heat-conducting pad does not increase significantly.

[0179] Among them, the graphene film is a film layer composed of stacked multi-layer graphene. For example, the graphene film can be fabricated from graphene microflakes with a nanoscale thickness as raw materials.

[0180] Among them, when the heat-conducting film 10 is a graphene film, the thickness of the graphene film can be greater than or equal to 15 μm and less than or equal to 50 μm. The interval between multiple heat-conducting films 10 can vary from the nanoscale to the micron scale. In this way, when the dielectric layer 20 is filled between two adjacent heat-conducting films 10, the thickness D of the formed dielectric layer 20 (see Figure 2 ) is between the nanoscale and the micron scale. For example, it can be 1 nm to 100 μm. In order to achieve a higher thermal conductivity, the thickness D of the dielectric layer 20 formed between two adjacent heat-conducting films 10 can be less than 1 μm. Among them, the thickness of the dielectric layer 20 can be controlled by the viscosity of the first organic material 21 and the lamination pressure during the fabrication process. In actual situations, the vertically arranged graphene films are usually in an irregular twisted shape, that is, the thickness of the dielectric layer 20 is in an uneven shape.

[0181] Among them, when the heat-conducting film 10 is a graphene film, the graphene film can be made of single-layer graphene microflakes or few-layer graphene microflakes (few layers usually refer to within 10 layers), and microscopically, it is composed of multiple layers of graphene microflakes stacked. The stacking method of the multiple layers of graphene microflakes is usually a non-AB stacking method. AB stacking means that the upper-layer graphene microflakes and the lower-layer graphene microflakes are stacked in a staggered arrangement to form a graphene film, and the non-AB stacking method means that the upper-layer graphene microflakes and the lower-layer graphene microflakes are not stacked in a staggered arrangement to form a graphene film.

[0182] For example, the graphene film can be prepared in the following way: Use single-layer graphene oxide microflakes with a D50 size of 20 μm (that is, the longitudinal size of the graphene microflakes is 20 μm). Among them, D50 refers to the particle size corresponding to when the cumulative particle size distribution percentage of the graphene microflakes reaches 50%. Weigh 500 mg of single-layer graphene oxide microflakes and disperse them in 20 ml of deionized water to prepare a solution. Coat the graphene oxide aqueous solution on a substrate with a width of 100 mm (such as a high-temperature-resistant graphite film) to obtain a graphene oxide film with a width of 100 mm and a thickness of about 25 μm. Put the graphene oxide film into an oven and dry it at 60 °C for 24 h. Put the dried graphene oxide film into a high-temperature graphitization furnace, introduce argon as a protective gas, with a flow rate of 100 cm 3 / min, and calcine it at a high temperature of 2600 °C for 20 min to carry out a high-temperature reduction reaction. After the reduction reaction is completed, let it cool naturally to room temperature, and control the density of the graphene heat-conducting film 10 to be about 1.6 g / cm 3 . Use the laser flash method to measure that the in-plane thermal conductivity of the graphene film is 1100 W / mk and the thickness is 20 μm.

[0183] Among them, in the embodiments of the present application, specifically use a graphene thin film with a thickness of 20 μm, 100 mm×100 mm, a density of 1.6 g / cm 3 , and a thermal conductivity of 1100 W / mk as the heat-conducting film 10 for vertical arrangement. Refer to the above organic material formula to make a heat-conducting structure 100 with a size of 0.2 mm×30 mm×30 mm. Using the ASTM D 5470 method, the thermal resistance of this thermal pad measured by Ruiling LW9389 equipment at 40 psi is 0.07 °C-cm 2 / W. Test the thermal resistance at different thicknesses, and calculate that the contact thermal resistance of the heat-conducting structure 100 is only 0.03 - 0.035 °C-cm 2 / W. Use a universal mechanical testing machine to test the compressibility of this heat-conducting structure 100, and the compression amount can reach 50% at 40 psi.

[0184] Place the above-mentioned thermal pad with dimensions of 0.2 mm × 30 mm × 30 mm on a chip with a bare chip size of 30 × 30 mm. This chip is a bare chip with an exposed surface, and its package size is 55 × 55 mm, with a typical operating heat dissipation of 300 W. Install the heat sink 300 on the chip using spring screws. The tightening force of the heat sink 300 is 40 psi. Complete the screw tightening of the heat sink 300 and the single board where the chip is located. Through the fan speed control method, the surface temperature of the chip is maintained at 100 degrees. After continuous operation for 500 h, disassemble the heat sink 300, and it can be found that the size of the thermal pad has no significant change, and the size increase is within the range of 2 mm expansion on each side. After disassembling the heat sink 300, the thermal conduction structure 100 is in a state of cohesive failure. There are parts of the thermal pad on both sides of the heat sink 300 and the chip, and dot-like organic substances can be observed at local positions of the chip and the heat sink 300. Therefore, the second organic material 22 system extends to the interface between the thermal conduction structure 100 and the heat dissipation contact surface, forming local chemical bond connections. The adhesion force of the second organic material 22 system to the heat dissipation contact surface is greater than the cohesive force of the first organic material 21 system, that is, the adhesion force between the adhesive layer 221 and the heat sink 300 and the adhesion force between the adhesive layer 221 and the chip are greater than the cohesive force after curing of the first organic material 21. Therefore, when disassembling the heat sink 300, there are dot-like adhesive layers 221 on the heat sink 300, and cohesive failure occurs in the thermal conduction structure 100.

[0185] Therefore, the thermal conduction structure 100 provided by the embodiment of the present application achieves a lower contact thermal resistance (reduced by more than 50%), maintains reliable contact between the thermal conduction structure 100 and the heat dissipation contact surface when the gap changes, and avoids the problem of overheating of the heating element 200 caused by interface delamination of the thermal conduction structure 100. In addition, by using a compressible graphene film, the size of the thermal conduction structure 100 has no obvious expansion after compression. It can avoid the problem of short circuit caused by the size expansion of the thermal conduction structure 100 overflowing to the edge of the heating element 200 (such as a chip). The thermal conduction structure 100 achieves an ultra-low application thermal resistance, and the application thermal resistance is reduced by more than half compared with the existing optimal thermal pad.

[0186] Alternatively, in another possible implementation, the thermal conduction film 10 can also be a graphite film, such as an artificial graphite film. The artificial graphite film is stacked by multiple layers of graphene in an AB stacking manner (AB stacking means that the upper graphene microplate is stacked in a staggered arrangement with the lower graphene microplate). The artificial graphite film uses a polyimide film as the raw material and undergoes high-temperature graphitization under a pressing condition to form an incompressible thermal conduction film 10. The density of the thermal conduction film 10 can be greater than or equal to 2.0 g / cm 3 and less than or equal to 2.1 g / cm 3 .

[0187] When the heat-conducting film 10 is a graphite film, a relatively thick graphite film is prone to internal cracking under pressure after being placed vertically, so a graphite film with a relatively thin thickness needs to be used. Therefore, the thickness of the graphite film is less than or equal to 25 μm. For example, the thickness of the graphite film can be less than or equal to 17 μm. The density of the graphite film can be greater than or equal to 1.5 3 and less than or equal to 1.9 g / cm 3 , and the density can be controlled by adjusting the lamination process conditions.

[0188] In the embodiment of the present application, a graphite film with a thickness of 12 μm, a density of 1.75 g / cm 3 , and a planar thermal conductivity of 1100 W / mk is used as the raw material for vertical arrangement. Referring to the above organic material formula (that is, the first organic material 21 is composed of vinyl silicone oil, terminal hydrogen silicone oil, and side hydrogen silicone oil, and the second organic material 22 is composed of butanetriol and octyltriethoxysilane) and its process, a heat-conducting structure 100 with a size of 0.2 mm × 30 mm × 30 mm is fabricated. Using the Ruiling LW9389 equipment, the measured thermal resistance of the heat-conducting structure 100 at 40 psi is 0.08 °C-cm 2 / W. Using a universal mechanical testing machine to test the compressibility of the heat-conducting structure 100, the compression amount reaches 35% at 40 psi.

[0189] In a possible implementation, Figure 5 as shown, each heat-conducting film 10 is inclined. For example, the angle a formed between the surface of the heat-conducting film 10 facing the dielectric layer 20 and the thickness direction of the heat-conducting structure 100 (i.e., the Figure 5 z direction in ) is greater than 0° and less than or equal to 45°. For example, the angle a formed between the surface of the heat-conducting film 10 facing the dielectric layer 20 and the thickness direction of the heat-conducting structure 100 can be 30°. Alternatively, in some examples, when the heat-conducting films 10 and the dielectric layer 20 are arranged alternately, the dielectric layer 20 is located between two adjacent heat-conducting films 10. In this way, the angle a formed between both the surface of the heat-conducting film 10 facing the dielectric layer 20 and the surface of the heat-conducting film 10 facing away from the dielectric layer 20 and the thickness direction of the heat-conducting structure 100 is greater than 0° and less than or equal to 45°.

[0190] By arranging the heat-conducting film 10 in an inclined shape, the heat-conducting film 10 undergoes compression deformation to absorb stress, thereby significantly reducing the compression stress of the heat-conducting structure 100. When the heat-conducting structure 100 is externally compressed, the planar size of the heat-conducting structure 100 does not expand significantly, thus avoiding the short-circuit risk caused by the size expansion of the heat-conducting structure 100. Among them, the inclined design of the heat-conducting film 10 can be specifically realized by a cutting process.

[0191] Embodiment 2

[0192] The differences from the above embodiments are as follows: In the embodiments of the present application, the second organic material 22 is a material that can undergo a polymerization reaction between the heating structure 200 and the heat conduction structure 100 and / or between the heat conduction structure 100 and the radiator 300 under preset reaction conditions. Moreover, the adhesive layer 221 formed after the second organic material 22 undergoes a polymerization reaction has pressure-sensitive properties. That is, the generated adhesive layer 221 is an adhesive that is sensitive to pressure. In this way, by applying pressure to the heating element 200 and the radiator 300, the heat conduction structure 100 and the heating element 200 and / or the heat conduction structure 100 and the radiator 300 are tightly adhered through the formed adhesive layer 221.

[0193] The polymerization reaction of the second organic material 22 between the heating structure 200 and the heat conduction structure 100 and / or between the heat conduction structure 100 and the radiator 300 will be introduced in detail below.

[0194] Among them, in order to enable the second organic material 22 to undergo a polymerization reaction when the reaction conditions are met, for example, the second organic material 22 can be an unsaturated acrylic material. The unsaturated acrylic material can undergo a polymerization reaction.

[0195] In the embodiments of the present application, the unsaturated acrylic material can be, for example, an acrylic material containing an ester group functional group, or the unsaturated acrylic material is an acrylic material containing a hydrophilic group. For example, the unsaturated acrylic material can also be an acrylic material containing strong hydrophilic groups such as carboxyl and hydroxyl groups.

[0196] In the embodiments of the present application, the acrylic material containing an ester group functional group can include: 2-ethylhexyl acrylate, 4-hydroxybutyl acrylate. That is, the second organic material 22 can be 2-ethylhexyl acrylate, or the second organic material 22 can be 4-hydroxybutyl acrylate. Mix 2-ethylhexyl acrylate in the first organic material 21.

[0197] Among them, in the embodiments of the present application, the first organic material 21 can be an organic chemical containing acrylic acid, polyurethane, epoxy or polyimide. For example, in the embodiments of the present application, the first organic material 21 can include 4-hydroxybutyl acrylate and divinyl adipate. 4-hydroxybutyl acrylate and divinyl adipate specifically undergo a curing reaction under the action of an initiator (such as a photoinitiator, a thermal initiator, etc.).

[0198] Therefore, in the embodiments of the present application, the first organic material 21 and the second organic material 22 are changed from silicone to an acrylic system. In this way, the cured substance of the first organic material 21 becomes solid or gel-like, making the heat conduction structure 100 a flexible heat conduction pad. And the second organic material 22 can diffuse to the outer surface of the heat conduction structure 100 to polymerize to form an adhesive with pressure-sensitive properties.

[0199] During configuration, the following components can be selected: 60 parts of 4-hydroxybutyl acrylate, 25 parts of 2-ethylhexyl acrylate, 15 parts of divinyl adipate, 1 part of acetophenone photoinitiator, and 0.02 parts of organic peroxide thermal initiator. These are mixed to form an organic slurry. The organic slurry is filled between two adjacent heat-conducting films 10 to form a dielectric layer 20 with a thickness of 5 μm. After UV light curing, the first organic material 21 becomes an adhesive with pressure-sensitive properties, and the adhesive bonds the heat-conducting films 10 to form an integral structure.

[0200] The reaction mechanism of free radical polymerization between monomers under UV light is as follows:

[0201]

[0202] In the mixed organic slurry of the above-mentioned first organic material 21 and second organic material 22, a part of 2-ethylhexyl acrylate does not fully participate in the free radical polymerization reaction initiated under UV light (for example, when the amount of 2-ethylhexyl acrylate is large, a part participates in the free radical polymerization reaction, and the remaining part of 2-ethylhexyl acrylate is mixed in the first organic material 21). These components of 2-ethylhexyl acrylate that do not participate in the polymerization reaction can expand to the surface of the heat-conducting structure 100 and the micropores of the heat-conducting structure 100 and the heat dissipation contact surface under the action of pressure or high temperature. These 2-ethylhexyl acrylate that diffuse outward can undergo self-polymerization to form a pressure-sensitive adhesive layer 221 in the presence of high temperature and thermal initiator. The adhesive layer 221 forms an interlocking bonding force with the metal surfaces of the heating element 200 and the radiator 300, enabling the heat-conducting structure 100 to achieve good tight adhesion with the heating element 200 and the radiator 300.

[0203] Using the ASTM D 5470 method and the Ruiling LW9389 equipment, the heat-conducting structure 100 with a thickness of 0.2 mm is compressed to 0.18 mm, and the measured application thermal resistance is 0.17 °C-cm 2 / W. Keeping the test conditions such as the thickness of the thermal pad unchanged, continuously heating for 168 h to monitor the change of the thermal resistance of the thermal pad, it can be observed that the application thermal resistance gradually decreases, and the application thermal resistance can be reduced to 0.13 °C-cm 2 / W. This shows that the contact thermal resistance of the heat-conducting structure 100 decreases significantly under continuous pressure and high temperature. Therefore, for the heat-conducting structure 100 provided in this application, the second organic material 22 diffuses outward and undergoes a polymerization reaction to form an adhesive layer 221 with chemical bonding force. The second organic material 22 diffuses outward into the microscopic grooves on the surfaces of the heating element 200 and the radiator 300, thereby enabling the heat-conducting structure 100 to be in close contact with the heating element 200 and the radiator 300, further reducing the contact thermal resistance of the heat-conducting structure 100, reducing the application thermal resistance of the heat-conducting structure 100, and enhancing the heat conduction ability of the heat-conducting structure 100.

[0204] It should be noted that in the embodiments of the present application, since the adhesive layer 221 has pressure-sensitive characteristics, even if cracks have occurred locally inside the heat conduction structure 100, it still has an adhesive effect after the stress is restored, and has a certain healing and restoration effect.

[0205] Embodiment III

[0206] The embodiments of the present application further provide a manufacturing method of the heat conduction structure 100, as Figure 6 shown, the method includes the following steps:

[0207] S101. Provide a plurality of heat conduction films 10, each heat conduction film 10 having a first surface 11 and a second surface 12 opposite to the first surface 11;

[0208] See Figure 7A shown, provide 4 heat conduction films 10. Of course, in some other examples, the number of heat conduction films 10 includes but is not limited to 4. The heat conduction film 10 can be a graphene film or an artificial graphite film.

[0209] Among them, when the heat conduction film 10 is a graphene film, the preparation method is as follows: Use single-layer graphene oxide micro-sheets with a D50 size of 20 μm (that is, the longitudinal size of the graphene micro-sheets is 20 μm), weigh 500 mg of single-layer graphene oxide micro-sheets and disperse them in 20 ml of deionized water to prepare a solution. Coat the graphene oxide aqueous solution on a substrate with a width of 100 mm (such as a high-temperature-resistant graphite film) to obtain a graphene oxide film with a width of 100 mm and a thickness of about 25 μm. Put the graphene oxide film into an oven and dry it at 60 °C for 24 h. Put the dried graphene oxide film into a high-temperature graphitization furnace, introduce argon as a protective gas, with a flow rate of 100 cm 3 / min, and calcine at a high temperature of 2600 °C for 20 min to carry out a high-temperature reduction reaction. After the reduction reaction is completed, naturally cool down to room temperature, and control the density of the graphene heat conduction film 10 to be about 1.6 g / cm 3 . Use the laser flash method to measure that the in-plane thermal conductivity of the graphene film is 1100 W / mk and the thickness is 20 μm.

[0210] When the heat conduction film 10 is an artificial graphite film, the manufacturing method is: multiple layers of graphene are stacked in an AB stacking manner (AB stacking means that the upper graphene micro-sheets are stacked in a staggered arrangement with the lower graphene micro-sheets) to form an incompressible heat conduction film 10, and the density of the heat conduction film 10 can be greater than or equal to 2.0 g / cm 3 and less than or equal to 2.1 g / cm 3 .

[0211] S102. Form a dielectric layer 20 on the first surface 11 and the second surface 12 of each heat-conducting film 10. The dielectric layer 20 includes a first organic material 21 and a second organic material 22 located in the first organic material 21;

[0212] In the embodiments of the present application, the second organic material 22 can be mixed in the first organic material 21 to form an organic slurry. As Figure 7B shown, the organic slurry is coated on both sides of the heat-conducting film 10 to form the dielectric layer 20. The compositions of the first organic material 21 and the second organic material 22 can refer to the above-mentioned Embodiment 1 and Embodiment 2, and will not be elaborated in the embodiments of the present application.

[0213] S103. Stack and press a plurality of heat-conducting films 10 formed with the dielectric layer 20 to form a block structure;

[0214] As Figure 7C shown, 4 heat-conducting films 10 with the dielectric layer 20 are stacked and pressed to form a block with a height of 100 mm and a size of 100×100 mm. The block is cured under UV light or heated at 120°C for 30 min. After the first organic material 21 is cured, an integral structure is formed between the plurality of heat-conducting films 10 and the dielectric layer 20. It should be noted that during the curing process of heating at 120°C for 30 min, there will be a situation where part of the second organic material 22 diffuses outward at high temperature. However, part of the second organic material 22 will still remain in the first organic material 21. In this way, the second organic material 22 exists in the cured first organic material 21, and the second organic material 22 can be in a liquid state or a semi-solid state.

[0215] S104. Cut the block structure to obtain a heat-conducting structure 100.

[0216] Refer to Figure 7D Therefore, the block structure obtained in step 103 is cut. For example, it can be cut into a heat-conducting pad with a thickness of 0.2 mm. Among them, after step 104, it further includes: polishing the above-mentioned 0.2-mm heat-conducting pad, and then cutting it into small pieces, such as a size of 30×30 mm, to obtain a heat-conducting structure 100 of 0.2 mm×30 mm×30 mm (refer to Figure 7E shown).

[0217] Among them, in the embodiments of the present application, cutting the block structure to obtain the heat-conducting structure 100, as Figure 7E shown, includes: cutting the block structure along the cutting direction, and the direction perpendicular to the heat-conducting film 10 (i.e., Figure 7D the direction of the solid-line arrow in Figure 7DAn included angle is formed between the direction of the dashed-line arrow in the figure (the direction of the dashed-line arrow in the figure) which is greater than or equal to 0° and less than or equal to 45°. That is, through inclined cutting, the heat-conducting film 10 in the heat-conducting structure 100 is inclined relative to the thickness direction of the heat-conducting structure 100. As shown in Figure 7D shown, cut along the dashed-line arrow. For example, the included angle between the cutting direction and the direction perpendicular to the heat-conducting film 10 can be 5°. In the heat-conducting structure 100 obtained by such cutting, the included angle between the surface of the heat-conducting film 10 facing the dielectric layer 20 and the thickness direction of the heat-conducting structure 100 is 5°.

[0218] In the embodiment of the present application, forming the dielectric layer 20 on the first surface 11 and the second surface 12 of each heat-conducting film 10 includes: providing a first organic material 21 and a second organic material 22, mixing the second organic material 22 in the first organic material 21 to form an organic slurry; coating the organic slurry on the first surface 11 and the second surface 12 of each heat-conducting film 10 to form the dielectric layer 20.

[0219] Among them, providing the first organic material 21 includes:

[0220] Providing vinyl silicone oil, terminal hydrogen silicone oil, hydrogen-containing silicone oil and a catalyst; for example, when configuring, 50 parts of vinyl silicone oil, 40 parts of terminal hydrogen silicone oil and 10 parts of side hydrogen silicone oil can be provided, and the vinyl silicone oil, terminal hydrogen silicone oil, side hydrogen silicone oil and the catalyst are mixed to obtain the first organic material 21. Among them, the vinyl silicone oil, terminal hydrogen silicone oil and side hydrogen silicone oil can be selected with a viscosity of 50 to 10,000 cps, where 1 cps = 1 mPa·s. For example, vinyl silicone oil with a viscosity of 50 mPa·s, terminal hydrogen silicone oil with a viscosity of 50 mPa·s and side hydrogen silicone oil with a viscosity of 200 mPa·s can be selected.

[0221] Providing the second organic material 22 includes: providing glycerol and octyltriethoxysilane. For example, 0.5 part of glycerol and 0.3 part of octyltriethoxysilane are provided. The glycerol and octyltriethoxysilane are mixed to obtain the second organic material 22. The first organic material 21 formed by the glycerol and octyltriethoxysilane can be mixed into the first organic material 21 in a capsule manner.

[0222] Alternatively, in another possible implementation, a first organic material 21 and a second organic material 22 are provided to form an organic slurry, including: providing the first organic material 21, where the first organic material 21 includes 4-hydroxybutyl acrylate and divinyl adipate; providing the second organic material 22, where the second organic material 22 includes 2-ethylhexyl acrylate; providing an initiator, where the initiator includes a photoinitiator and a thermal initiator; when compounding, 50 parts of 4-hydroxybutyl acrylate, 15 parts of divinyl adipate, 25 parts of 2-ethylhexyl acrylate, 1 part of photoinitiator, and 0.02 parts of thermal initiator can be mixed to obtain the organic slurry.

[0223] Of course, in some other examples, the second organic material 22 can also penetrate and diffuse into the first organic material 21 after the first organic material 21 is cured. For example, the first organic material 21 can be first cured to form a solid or gel-like substance, and then the second organic material 22 with a nanoscale thickness is provided on the first organic material 21 of the obtained heat-conducting structure 100, and the second organic material 22 can penetrate and diffuse into the cured first organic material 21. It should be noted that when the second organic material 22 penetrates and diffuses into the cured first organic material 21, the viscosity of the second organic material 22 needs to be relatively low.

[0224] Example Four

[0225] The embodiment of the present application also provides a heat-conducting system, which may include a heating element 200 and the heat-conducting structure described in any of the above embodiments. The heat-conducting structure is used to transfer the heat from the heating element 200. By including the above heat-conducting structure 100, the second organic material 22 in the heat-conducting structure 100 diffuses outward to form an adhesive layer 221 with van der Waals force, chemical bond binding force, or biting force between the heating element 200 and the heat-conducting structure 100. The adhesive layer 221 tightly connects the heating element 200 and the heat-conducting structure 100, avoiding the problem of delamination between the heating element 200 and the heat-conducting structure 100.

[0226] In a possible implementation, the heat-conducting system further includes a radiator 300. The heat-conducting structure 100 is located between the heating element 200 and the radiator 300, and the heat-conducting structure 100 is used to transfer the heat from the heating element 200 to the radiator 300. In this way, the second organic material 22 in the heat-conducting structure 100 diffuses outward to form an adhesive layer 221 with van der Waals force, chemical bond binding force, or biting force between the heating element 200 and the heat-conducting structure 100 and between the heating element 200 and the radiator 300. The adhesive layer 221 tightly connects the heating element 200 and the heat-conducting structure 100 and between the heat-conducting structure 100 and the radiator 300.

[0227] Example Five

[0228] An embodiment of the present application further provides a chip packaging structure 400, as Figure 8A shown, which at least includes: a chip 201, a packaging heat dissipation cover 301, and the heat conduction structure 100 as described in any one of the above, disposed on a packaging carrier 402 (which can be, for example, a circuit board or a packaging board), and the heat conduction structure 100 is located between the chip 201 and the packaging heat dissipation cover 301.

[0229] And at a preset temperature or a preset pressure, the second organic material 22 in the heat conduction structure 100 diffuses between the heat conduction structure 100 and the chip 201 and / or between the heat conduction structure 100 and the packaging heat dissipation cover 301, and the outward-diffusing second organic material 22 undergoes a chemical reaction to form an adhesive layer 221, and the adhesive layer 221 connects the heat conduction structure 100 with the chip 201 and / or the heat conduction structure 100 with the packaging heat dissipation cover 301.

[0230] By including the above heat conduction structure 100, an adhesive layer 221 is formed between the heat conduction structure 100 and the chip 201 and / or between the heat conduction structure 100 and the packaging heat dissipation cover 301. During the generation process of the adhesive layer 221, a chemical bonding force is formed at the joint between the heat conduction structure 100 and the chip 201 and / or between the heat conduction structure 100 and the packaging heat dissipation cover 301, ensuring that the surface of the heat conduction structure 100 and the chip 201 / package heat dissipation cover 301 maintains a tight combination, thereby avoiding the problem that the chip 201 overheats due to delamination at the interface between the heat conduction structure 100 and the chip 201 / package heat dissipation cover 301 during use. In addition, the outward-diffusing second organic material 22 can fill the local micropores between the heat conduction structure 100 and the chip 201 and / or between the heat conduction structure 100 and the packaging heat dissipation cover 301, improving the microscopic wettability of the heat conduction structure 100, thereby reducing the interfacial contact thermal resistance, reducing the application thermal resistance of the heat conduction structure 100, and achieving the purpose of good heat dissipation for the chip 201.

[0231] In a possible implementation manner, it further includes: a fixing frame 401, the fixing frame 401 is located between the packaging carrier 402 and the packaging heat dissipation cover 301, and the fixing frame 401, the packaging carrier 402, and the packaging heat dissipation cover 301 enclose a packaging cavity, and the chip 201 and the heat conduction structure 100 are located in the packaging cavity. For example, one end of the fixing frame 401 is connected to the packaging carrier 402, the other end of the fixing frame 401 is connected to the packaging heat dissipation cover 301, and the inner surfaces of the fixing frame 401, the packaging carrier 402, and the packaging heat dissipation cover 301 enclose a cavity. In this way, the heat generated by the chip 201 is transferred to the packaging heat dissipation cover 301 through the heat conduction structure 100, and the heat generated by the chip 201 in the cavity is transferred to the outside of the cavity, thereby realizing the heat dissipation effect on the chip 201. In the embodiment of the present application, the packaging heat dissipation cover 301 can be a packaging cover made of an aluminum plate.

[0232] In a possible implementation, refer to Figure 8A As shown, the bottom end of the fixed frame 401 is connected to the encapsulation carrier board 402 by snap connection, welding or adhesive layer bonding. The top end of the fixed frame 401 is firmly connected to the encapsulation heat dissipation cover 301 through an elastic fastener 405. That is, after the fixed frame 401 and the encapsulation heat dissipation cover 301 are connected, there is a compressible margin between the fixed frame 401 and the encapsulation heat dissipation cover 301. In this way, when a force is applied to the encapsulation heat dissipation cover 301, a pressure can be applied to the heat conduction structure 100. Under the action of the pressure, the second organic material 22 of the heat conduction structure 100 diffuses outward and undergoes a chemical reaction to form an adhesive layer 221.

[0233] In the embodiment of the present application, the elastic fastener 405 can specifically be an elastic buckle or a spring screw and other elastic fasteners. A plurality of threaded holes are provided on the fixed frame 401. For example, 8 threaded holes can be provided, and 8 spring screws can be used to cooperate with the threaded holes to connect the encapsulation heat dissipation cover 301 and the fixed frame 401.

[0234] Of course, in some other examples, the fixed frame 401 and the encapsulation carrier board 301 are firmly connected. For example, the fixed frame 401 and the encapsulation carrier board 301 are firmly connected by means of screws, snap connection or welding.

[0235] In another possible implementation, refer to Figure 8B As shown, the encapsulation heat dissipation cover 301 and the fixed frame 401 can be integrally formed. For example, an aluminum plate can be used to form the encapsulation heat dissipation cover 301 and the fixed frame 401 by stamping. In this way, the cover body composed of the encapsulation heat dissipation cover 301 and the fixed frame 401 is connected to the encapsulation carrier board 402 to enclose a cavity. The chip 201 can be connected to the encapsulation carrier board 402 through the first pad 403. A second pad 404 is provided on the side of the encapsulation carrier board 402 facing away from the first pad. The chip 201 is connected to the circuit board through the first pad and the second pad 404. By setting the encapsulation heat dissipation cover 301 and the fixed frame 401 as a whole, the encapsulation can be completed by connecting the encapsulation carrier board 402 and the fixed frame 401 during encapsulation, improving the encapsulation efficiency. Moreover, since the fixed frame 401 and the encapsulation heat dissipation cover 301 are integrated, there is no assembly gap between the fixed frame 401 and the encapsulation heat dissipation cover 301. Therefore, after encapsulation, it is avoided that water vapor enters the cavity formed by the encapsulation carrier board 402, the encapsulation heat dissipation cover 301 and the fixed frame 402 through the assembly gap between the fixed frame 401 and the encapsulation heat dissipation cover 301 and affects the chip 201.

[0236] In the embodiments of the present application, the heat conduction structure 100 can be a heat conduction structure 100 with a thickness of 0.1 - 0.4 mm. For example, a heat conduction structure 100 with a thickness of 0.2 mm is selected and placed on a chip 201 with a bare chip size of 30×30 mm.

[0237] Embodiment Six

[0238] The embodiments of the present application further provide an electronic device, which may include, but is not limited to, mobile or fixed terminals with heating elements 200 such as mobile phones, tablet computers, laptop computers, ultra-mobile personal computers (UMPCs), handheld computers, walkie-talkies, netbooks, point of sale (POS) terminals, personal digital assistants (PDAs), wearable devices, virtual reality devices, wireless USB flash drives, Bluetooth speakers / headphones, or in-vehicle pre-installed devices, dash cams, security devices, etc.

[0239] In a possible implementation manner, taking the mobile phone 500 as an example of the above-mentioned electronic device, the electronic device may at least include: the chip packaging structure 400 described in Embodiment Four above (see Figure 10 as shown).

[0240] See Figure 9 and Figure 10 as shown, the electronic device may further include a display screen 501 and a rear cover 502. The display screen 501 and the rear cover 502 enclose a housing 510. The chip packaging structure 400 and a circuit board 520 are located inside the housing 510. The chip packaging structure 400 can be arranged on the circuit board 520 inside the electronic device. For example, the packaging carrier 402 in the chip packaging structure 400 can be electrically connected to the circuit board 520 through the second pad 404. The packaging heat dissipation cover 301 in the chip packaging structure 400 can be in contact with the housing 510 of the electronic device (such as the inner surface 5021 of the rear cover 502). In this way, the heat of the packaging heat dissipation cover 301 can be dissipated to the outside of the electronic device through the housing 510 of the electronic device, achieving good heat dissipation of the chip 201 inside the electronic device.

[0241] In another possible implementation manner, the electronic device provided in the embodiments of the present application, as Figure 9 and Figure 11 shown, at least includes: a housing 510, a heating element 200, a radiator 300, and any one of the heat conduction structures 100 provided in the above, and the heat conduction structure 100 is located between the heating element 200 and the radiator 300. The heating element 200 can be a memory or a CPU, etc., or the heating element 200 can also be other electronic components that generate heat during operation.

[0242] During installation, the heat conduction structure 100 is disposed on the heating element 200, and the heat sink 300 is covered on the heat conduction structure 100. The other end of the heat sink 300 can be in contact with the housing 510 of the electronic device. For example, the other end of the heat sink 300 can be in contact with the inner surface 5021 of the rear cover 502. Or when the electronic device has a middle frame, the heat sink 300 can be in contact with the middle frame. In this way, under high temperature or pressure, the second organic material 22 in the heat conduction structure 100 diffuses between the heating element 200 and the heat conduction structure 100 and / or between the heat sink 300 and the heat conduction structure 100. When the reaction conditions are reached, the second organic material 22 undergoes a chemical reaction, causing an adhesive layer 221 with van der Waals force, chemical bond binding force or biting force to be generated at the joint between the heating element 200 and the heat conduction structure 100 and / or between the heat sink 300 and the heat conduction structure 100, ensuring close contact between the heat conduction structure 100 and the surface of the heating element 200 / heat sink 300, and avoiding the problem that the heating element 200 overheats due to delamination at the interface between the heat conduction structure 100 and the heating element 200 / heat sink 300 during use.

[0243] In addition, the second organic material 22 diffusing outwards can fill the local micropores between the heat conduction structure 100 and the heating element 200 and between the heat conduction structure 100 and the heat sink 300, improving the microscopic wettability of the heat conduction structure 100, thereby reducing the interfacial contact thermal resistance and reducing the application thermal resistance of the heat conduction structure 100. The heat generated by the heating element 200 in the electronic device is dissipated outwards in time, avoiding the problem that the heating element 200 cannot work properly due to excessive temperature. Moreover, the second organic material 22 diffusing outwards can fill the local micropores between the heat conduction structure 100 and the heating element 200 and between the heat conduction structure 100 and the heat sink 300, so that the contact area between the formed adhesive layer 221 and the heating element 200 / heat sink 300 is increased and the adhesive force is greater.

[0244] Among them, in the embodiment of the present application, taking the mobile phone 500 as an example of the above-mentioned electronic device for illustration, see Figure 9 and Figure 11 As shown, the housing 510 can include a display screen 501 and a rear cover 502, and the display screen 501 and the rear cover 502 enclose a housing 510 with a cavity inside. The heating element 200 can be disposed on the circuit board 520, and the heat sink 300 can be in contact with the inner surface 5021 of the rear cover 502, so that the heat generated by the heating element 200 is transferred to the heat sink 300 through the heat conduction structure 100, and the heat sink 300 dissipates the heat out of the electronic device through the rear cover 502.

[0245] Of course, in some examples, when the rear cover 502 and / or the middle frame of the electronic device are made of metal, the rear cover 502 and / or the middle frame can serve as the radiator 300. That is, the heating element 200 can be arranged on the circuit board 520. One side of the heat conduction structure 100 covers the heating element 200, and the other side of the heat conduction structure 100 can be pressed against the inner surface of the rear cover 502 or the middle frame of the electronic device. In this way, the heat generated by the heating element 200 is transferred to the rear cover 502 or the middle frame of the electronic device through the heat conduction structure 100, so as to achieve the purpose of dissipating heat outward.

[0246] Alternatively, in some examples, due to the limitation of the component layout in the electronic device, the radiator 300 cannot be in contact with the rear cover 502 or the middle frame of the electronic device. In this case, the radiator 300 can be connected to the rear cover 502 or the middle frame of the electronic device through a heat-conducting metal. In this way, the heat on the radiator 300 can be transferred to the rear cover 502 or the middle frame of the electronic device through the heat conduction structure.

[0247] It can be understood that the structure illustrated in the embodiments of the present application does not constitute a specific limitation on the mobile phone 500. In other embodiments of the present application, the mobile phone 500 may include more or fewer components than those illustrated, or combine certain components, or split certain components, or have different component arrangements. The illustrated components can be implemented in hardware, software, or a combination of software and hardware.

[0248] In the description of the embodiments of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "coupled" should be understood in a broad sense. For example, it can be a fixed connection, or an indirect connection through an intermediate medium, and can be the communication inside two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to specific situations.

[0249] The terms "first", "second", "third", "fourth", etc. (if any) in the description and claims of the embodiments of the present application and the above drawings are used to distinguish similar objects, and do not necessarily describe a specific order or sequence.

[0250] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the embodiments of the present application, and not to limit them; although the embodiments of the present application have been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A heat conduction structure for transferring the heat generated by a heating element to a radiator, characterized in that, it includes: a plurality of heat conduction films and one or more dielectric layers, and the heat conduction films and the dielectric layers are arranged alternately; one end of the heat conduction film faces the heating element, and the other end faces the radiator, and the heat conduction film and the dielectric layer are arranged alternately along a direction perpendicular to the direction in which the one end and the other end face each other; the dielectric layer at least includes: a second organic material, and the second organic material is used to diffuse toward the outer surface of the heat conduction structure when the heat conduction structure is at a preset temperature or a preset pressure, and the second organic material diffusing outward forms an adhesive layer between the heat conduction structure and the heating element and / or between the heat conduction structure and the radiator, and the adhesive layer is used to connect the heat conduction structure to the heating element and / or connect the heat conduction structure and the radiator.

2. The heat conduction structure according to claim 1, characterized in that, the dielectric layer at least includes: a first organic material, and the first organic material is used to bond two adjacent heat conduction films.

3. The heat conduction structure according to claim 2, characterized in that, the second organic material is located in the first organic material, and the second organic material is used to diffuse through the first organic material toward the outer surface of the heat conduction structure when the heat conduction structure is at a preset temperature or a preset pressure.

4. The heat conduction structure according to claim 2 or 3, characterized in that, at the preset temperature or the preset pressure, the second organic material diffuses through the body of the first organic material.

5. The heat conduction structure according to any one of claims 2-4, characterized in that, the first organic material is in a solid state, and the second organic material is in a liquid or semi-solid state.

6. The heat conduction structure according to any one of claims 2-5, characterized in that, the first organic material is a polyorganosiloxane containing at least unsaturated siloxane.

7. The heat conduction structure according to any one of claims 2-6, characterized in that, the first organic material includes vinyl silicone oil and hydrogen-containing silicone oil, and the molecular weights of the vinyl silicone oil and the hydrogen-containing silicone oil are both less than 15,000.

8. The heat conduction structure according to claim 7, characterized in that, the hydrogen-containing silicone oil includes at least one of terminal hydrogen silicone oil and side hydrogen silicone oil.

9. The heat conduction structure according to any one of claims 2-8, characterized in that, the first organic material is an organic chemical compound containing acrylic acid, polyurethane, epoxy or polyimide.

10. The heat conduction structure according to claim 9, characterized in that, the first organic material includes 4-hydroxybutyl acrylate and divinyl adipate.

11. The heat conduction structure according to any one of claims 2-10, characterized in that, the weight percentage of the second organic material in the first organic material is less than 50%.

12. The heat conduction structure according to any one of claims 1-11, characterized in that, the preset temperature is greater than or equal to 35 °C.

13. The heat conduction structure according to any one of claims 1-12, It is characterized in that the preset pressure is greater than or equal to 5 psi.

14. The heat conduction structure according to any one of claims 1-13, It is characterized in that the second organic material diffusing outwards forms an adhesive layer with van der Waals force, chemical bond binding force or biting force between the heat conduction structure and the heating element and / or between the heat conduction structure and the radiator.

15. The heat conduction structure according to any one of claims 1-14, It is characterized in that the adhesive force between the adhesive layer and the radiator, and / or the adhesive force between the adhesive layer and the heating element, is greater than the cohesive force of the dielectric layer.

16. The heat conduction structure according to any one of claims 1-15, It is characterized in that the second organic material is a material that undergoes a dehydration condensation reaction or a polymerization reaction with the heating element and / or at least a partial area on the outer surface of the radiator facing the heat conduction structure under preset reaction conditions; wherein, the preset reaction conditions include reaction temperature, reaction humidity or reaction medium.

17. The heat conduction structure according to claim 16, It is characterized in that the reaction temperature is greater than or equal to 35 °C.

18. The heat conduction structure according to claim 16 or 17, It is characterized in that the reaction humidity is greater than or equal to 10%.

19. The heat conduction structure according to any one of claims 16-18, It is characterized in that the second organic material includes a liquid material containing active hydroxyl groups and a liquid material containing hydrolyzable groups.

20. The heat conduction structure according to any one of claims 16-19, It is characterized in that the liquid material containing active hydroxyl groups includes polyols.

21. The heat conduction structure according to claim 20, It is characterized in that the liquid material containing hydrolyzable groups is a silane coupling agent.

22. The heat conduction structure according to claim 21, It is characterized in that the polyol is at least one of butanetriol, pentaerythritol, glycerol, trimethylolethane, xylitol or sorbitol, the silane coupling agent is a trialkoxysilane, or the silane coupling agent is octyltriethoxysilane.

23. The heat conduction structure according to any one of claims 16-23, It is characterized in that the adhesive layer formed after the second organic material undergoes a polymerization reaction has a pressure-sensitive property.

24. The heat conduction structure according to any one of claims 16-24, It is characterized in that the second organic material is an unsaturated acrylic material.

25. The heat conduction structure according to claim 24, It is characterized in that the unsaturated acrylic material is an acrylic material containing an ester group functional group, or the unsaturated acrylic material is an acrylic material containing a hydrophilic group.

26. The heat conduction structure according to any one of claims 1-25, It is characterized in that the included angle formed between the side of the heat conduction film facing the dielectric layer and the thickness direction of the heat conduction structure is greater than 0° and less than or equal to 45°, or An angle formed between one side of the heat-conducting film facing the dielectric layer and one side of the heat-conducting film facing away from the dielectric layer and the thickness direction of the heat-conducting structure is greater than 0° and less than or equal to 45°.

27. The heat-conducting structure according to any one of claims 1-26, wherein, The percentage by weight of the second organic material diffused outwards in the dielectric layer is less than or equal to 50%.

28. The heat-conducting structure according to any one of claims 1-27, wherein, The thickness of the adhesive layer is less than or equal to 1 μm.

29. The heat-conducting structure according to any one of claims 1-28, wherein, The thickness of the heat-conducting structure is greater than or equal to 0.1 mm and less than or equal to 5 mm.

30. The heat-conducting structure according to any one of claims 1-29, wherein, The thermal conductivity of the heat-conducting structure in the first direction is greater than the thermal conductivity of the heat-conducting structure in the second direction, and the thermal conductivity of the heat-conducting structure in the third direction is greater than the thermal conductivity of the heat-conducting structure in the second direction, wherein the first direction is a direction perpendicular to the side of the heating element facing the heat-conducting structure, the second direction is a direction perpendicular to the side of the heat-conducting film facing the dielectric layer, and the third direction is a direction perpendicular to both the first direction and the second direction.

31. The heat-conducting structure according to claim 30, wherein, The ratio of the thermal conductivity of the heat-conducting structure in the first direction to the thermal conductivity of the heat-conducting structure in the second direction is greater than or equal to 5.

32. The heat-conducting structure according to claim 30 or 31, wherein, The thermal conductivity of the heat-conducting structure in the first direction is higher than or equal to 35 W / mk.

33. The heat-conducting structure according to any one of claims 1-32, wherein, The thickness of each heat-conducting film is greater than or equal to 7 μm and less than or equal to 200 μm.

34. The heat-conducting structure according to any one of claims 1-33, wherein, The heat-conducting film is a compressible heat-conducting film.

35. The heat-conducting structure according to any one of claims 1-34, wherein, The heat-conducting film is a graphene film or a graphite film.

36. A heat-conducting system, wherein, It includes a heating element and the heat-conducting structure according to any one of claims 1-35, and the heat-conducting structure is used to transfer heat from the heating element.

37. The heat-conducting system according to claim 36, wherein, It further includes a radiator, the heat-conducting structure is located between the heating element and the radiator, and the heat-conducting structure is used to transfer the heat from the heating element to the radiator.

38. A chip packaging structure, wherein, It at least includes: A chip, a packaging heat dissipation cover arranged on a packaging carrier board, and the heat-conducting structure according to any one of claims 1-35 above, and the heat-conducting structure is located between the chip and the packaging heat dissipation cover; And when the heat conduction structure is at a preset temperature or a preset pressure, the second organic material in the heat conduction structure diffuses outward between the heat conduction structure and the chip and / or between the heat conduction structure and the package heat dissipation cover to form an adhesive layer, and the heat conduction structure is connected to the chip and / or the heat conduction structure is connected to the package heat dissipation cover through the adhesive layer.

39. The chip package structure according to claim 38, wherein, it further comprises: a fixing frame, the fixing frame is located between the package carrier board and the package heat dissipation cover, and the fixing frame, the package carrier board and the package heat dissipation cover enclose a cavity, and the chip and the heat conduction structure are located in the cavity.

40. The chip package structure according to claim 39, wherein, the fixing frame is fixedly connected to the package heat dissipation cover through an elastic fastener, or the fixing frame and the package heat dissipation cover are integrated.

41. The chip package structure according to claim 39 or 40, wherein, the fixing frame and the package carrier board are fixedly connected.

42. An electronic device, wherein, it at least comprises: the chip package structure according to any one of claims 38-41 above.

43. An electronic device, wherein, it at least comprises: a housing and a heating element, a radiator and the heat conduction structure according to any one of claims 1-35 above provided in the housing, and the heat conduction structure is located between the heating element and the radiator.

44. The electronic device according to claim 43, wherein, the radiator is in contact with the housing.

45. A manufacturing method of a heat conduction structure, wherein, the method comprises: providing a plurality of heat conduction films, each heat conduction film having a first surface and a second surface opposite to the first surface; forming a dielectric layer on the first surface and the second surface of each heat conduction film, the dielectric layer comprising a second organic material, wherein the second organic material is used to diffuse toward the outer surface of the heat conduction structure and form an adhesive layer when the heat conduction structure is at a preset temperature or a preset pressure; stacking and pressing the plurality of heat conduction films formed with the dielectric layer to form a block structure; cutting the block structure to obtain a heat conduction structure.

46. The manufacturing method of the heat conduction structure according to claim 45, wherein, the cutting the block structure to obtain a heat conduction structure includes: cutting the block structure along a cutting direction, and an angle is formed between the direction perpendicular to the heat conduction film and the cutting direction, and the angle is greater than or equal to 0° and less than or equal to 45°.

47. The manufacturing method of the heat conduction structure according to claim 45 or 46, wherein, the forming a dielectric layer on the first surface and the second surface of each heat conduction film includes: providing a first organic material, the first organic material comprising vinyl silicone oil, terminal hydrogen silicone oil, hydrogen-containing silicone oil and a catalyst; providing the second organic material, providing the second organic material comprising butanetriol and octyltriethoxysilane; Mix the first organic material and the second organic material to form an organic slurry; Coat the organic slurry on the first surface and the second surface of each of the heat-conducting films to form the dielectric layer.

48. The method for manufacturing the heat-conducting structure according to claim 45 or 46, characterized in that, forming the dielectric layer on the first surface and the second surface of each of the heat-conducting films includes: providing a first organic material, which includes 4-hydroxybutyl acrylate and divinyl adipate; providing the second organic material, which includes 2-ethylhexyl acrylate; providing an initiator, which includes a photoinitiator and a thermal initiator; mixing the first organic material, the second organic material, and the initiator to obtain an organic slurry; coating the organic slurry on the first surface and the second surface of each of the heat-conducting films to form the dielectric layer.

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