Manufacturing apparatus and manufacturing method

Abstract

The present invention relates to a method and an apparatus for manufacturing a laminated substrate, the method including a processing step for processing at least one of a plurality of substrates, a lamination step for manufacturing a laminated substrate by laminating the plurality of substrates, and a determination step for determining a correction amount on the basis of the amount of positional displacement between the plurality of substrates of each of the plurality of laminated substrates, at least one of the processing step and the lamination step includes a correction step for correcting at least one of the plurality of substrates laminated after the determination step by using the correction amount.

Description

[0001] This application is a divisional application of the parent application with the applicant being "Nikon Corporation", the invention title being "Method and Apparatus for Manufacturing a Stacked Substrate", the filing date being "October 22, 2018", and the application number being "201880076998.X". Technical Field

[0002] The present invention relates to a manufacturing apparatus and a manufacturing method. Background Art

[0003] There is a technique for forming a stacked substrate by stacking a plurality of substrates.

[0004] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2014-216496

[0005] Position misalignment between substrates in a stacked substrate occurs for various reasons. Therefore, in order to obtain a specified alignment accuracy, it is necessary to correct a plurality of position misalignment components. Summary of the Invention

[0006] A first aspect of the present invention provides a manufacturing method including: a processing step of processing at least one of a plurality of substrates; a stacking step of stacking the plurality of substrates to manufacture a stacked substrate; and a determination step of determining a correction amount based on a position misalignment amount between a plurality of substrates of each of the plurality of stacked substrates, wherein at least one of the processing step and the stacking step includes a correction step of correcting at least one of the plurality of substrates to be stacked after the determination step using the correction amount.

[0007] A second aspect of the present invention provides a manufacturing method including: a processing step of processing at least one of a plurality of substrates, the processing step including a correction step of correcting at least one of the plurality of substrates to be stacked after the determination using a correction amount determined based on a position misalignment amount between a plurality of substrates of each of the plurality of stacked substrates each having the plurality of substrates to be stacked.

[0008] A third aspect of the present invention provides a manufacturing method including: a stacking step of manufacturing a stacked substrate by stacking a plurality of substrates, the stacking step including a correction step of correcting at least one of the plurality of substrates to be stacked after the determination using a correction amount determined based on a position misalignment amount between a plurality of substrates of each of the plurality of stacked substrates.

[0009] A fourth aspect of the present invention provides a manufacturing apparatus, comprising: a processing unit configured to process at least one of a plurality of substrates; and a stacking unit configured to manufacture a stacked substrate by stacking the plurality of substrates, wherein at least one of the processing unit and the stacking unit corrects at least one of the plurality of substrates to be stacked after determination, by using a correction amount determined based on the positional deviation amount between the substrates of each of the plurality of stacked substrates.

[0010] A fifth aspect of the present invention provides a manufacturing apparatus, comprising: a processing unit configured to process at least one of a plurality of substrates, wherein the processing unit corrects at least one of the plurality of substrates to be stacked after determination, by using a correction amount determined based on the positional deviation amount between the substrates of each of the plurality of stacked substrates, each of which has a plurality of substrates stacked on one another.

[0011] A sixth aspect of the present invention provides a manufacturing apparatus, comprising: a stacking unit configured to manufacture a stacked substrate by stacking a plurality of substrates, wherein the stacking unit corrects at least one of the plurality of substrates to be stacked after determination, by using a correction amount determined based on the positional deviation amount between the substrates of each of the plurality of stacked substrates.

[0012] The above summary of the invention does not list all the features of the present invention. Sub-combinations of these feature groups can also form an invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 is a block diagram showing the overall structure of the manufacturing apparatus 10.

[0014] Figure 2 is a flowchart showing the overall operation steps of the manufacturing apparatus 10.

[0015] Figure 3 is a flowchart showing the operation steps of the processing unit 11.

[0016] Figure 4 is a schematic diagram of the film forming apparatus 100.

[0017] Figure 5 is a schematic diagram of the circuit forming apparatus 200.

[0018] Figure 6 is a flowchart showing the operation steps of the stacking unit 13.

[0019] Figure 7 is a schematic diagram of the substrates 510 and 520.

[0020] Figure 8 is a schematic diagram of the substrate holder 530 for holding the substrate 510.

[0021] Figure 9 is a schematic diagram of the substrate holder 540 for holding the substrate 520.

[0022] Figure 10 is a schematic cross-sectional view of the bonding device 300.

[0023] Figure 11 is a flowchart showing the operation steps of the bonding device 300.

[0024] Figure 12 is a diagram for explaining the operation of the bonding device 300.

[0025] Figure 13 is a diagram for explaining the operation of the bonding device 300.

[0026] Figure 14 is a diagram for explaining the operation of the bonding device 300.

[0027] Figure 15 is a diagram for explaining the operation of the bonding device 300.

[0028] Figure 16 is a schematic diagram for explaining the lamination process.

[0029] Figure 17 is a schematic diagram for explaining the positional offset component generated during the lamination process.

[0030] Figure 18 is a schematic diagram for explaining the positional offset component generated during the lamination process.

[0031] Figure 19 is a schematic diagram for explaining the positional offset component generated during the lamination process.

[0032] Figure 20 is a schematic diagram showing the distribution of the positional offset.

[0033] Figure 21 is a schematic cross-sectional view of the correction device 601.

[0034] Figure 22 is a schematic top view of the correction device 601.

[0035] Figure 23 is a schematic diagram for explaining the operation of the correction device 601. Detailed Embodiments

[0036] Hereinafter, the present invention will be described through embodiments of the invention. The following embodiments do not limit the invention described in the claims. The combinations of features described in the embodiments are not all necessary for the solution means of the invention.

[0037] Figure 1FIG. 0 is a block diagram showing the overall structure of a stacked substrate manufacturing apparatus 10. The manufacturing apparatus 10 includes a processing unit 11, a second measurement unit 12, a stacking unit 13, a first measurement unit 14, and a control device 130.

[0038] The processing unit 11 includes a film forming apparatus 100 and a circuit forming apparatus 200. The film forming apparatus 100 forms a functional layer or a sacrificial layer on a substrate by a method such as CVD (Chemical Vapor Deposition). The circuit forming apparatus 200 forms patterns such as elements and wirings by performing patterning on the functional layer or the sacrificial layer formed on the substrate through a patterning technique such as photolithography. By repeating such operations, the processing unit 11 initially processes a substrate in a bare wafer state to form structures such as circuits, and repeatedly manufactures a plurality of substrates that are part of the stacked substrate. In addition, the "processing" of the substrate in the following description refers to performing processes such as film formation and patterning on the substrate, thereby forming structures such as wirings, circuits, and protective films on the substrate. In addition, the substrate referred to here includes not only single crystal wafers such as silicon and compound semiconductors, but also substrates on which structures such as wirings, circuits, and protective films have already been formed.

[0039] As the circuit forming apparatus 200, an exposure apparatus, an electron beam lithography apparatus, a nanoimprint apparatus, etc. can be used. In addition, the processing unit 11 may further be provided with other equipment used when processing a substrate that is part of the stacked substrate by photolithography. Examples of such other equipment include a coater that coats a resist on the substrate, a wet etching apparatus, a dry etching apparatus, etc. that remove a part of the structure on the substrate.

[0040] The film forming apparatus 100 changes the conditions during film formation, such as the substrate temperature, applied voltage, composition of the source gas, etc., thereby enabling the characteristics of the formed film to change. In addition, the circuit forming apparatus 200 can change the shape and size of the pattern formed by patterning through optical or mechanical adjustment. Therefore, these film forming apparatus 100 and circuit forming apparatus 200 can also be used as correction apparatuses for correcting the substrate.

[0041] In addition, the film forming apparatus 100 and the circuit forming apparatus 200 have manufacturing errors regarding film formation and circuit formation. In addition, when using an exposure apparatus as the circuit forming apparatus 200, repeated exposure is performed using one photomask to perform large-area patterning. In such a case, although exposure is performed using the same photomask, different deformations sometimes occur in the patterns formed during each exposure. Therefore, even when processing substrates by the same method in the processing unit 11, individual differences occur in the processed substrates. Such individual differences can also cause positional offsets of the substrates in the stacked substrate.

[0042] The second measurement unit 12 measures the deformation of the substrate carried into the layer stacking unit 13. The deformation of the substrate affects the amount of positional deviation of the stacked substrate formed by stacking the substrates. The second measurement unit 12 can be provided independently of the stacking unit 13, but can also serve as a measurement device for alignment of the bonding device 300.

[0043] Here, the deformation of the substrate is manifested as the displacement of structures such as components and wirings in the substrate from the design coordinates, i.e., the design position. The deformation generated in the substrate includes planar deformation and three-dimensional deformation. If the positional deviation caused by the deformation moves in the plane direction (X-Y direction) of the bonding surface, even if the rotation angle (θ) within the bonding surface is adjusted, the positional deviation between the substrates cannot be eliminated.

[0044] Planar deformation is the displacement of structures along the bonding surface of a certain substrate relative to the bonding surface of other substrates. Planar deformation includes linear deformation that can represent the displacement relative to the design position through linear transformation, and other deformations, i.e., non-linear deformations. An example of linear deformation is a deformation with a magnification rate where the displacement amount increases at a constant rate in a constant direction, such as from the center towards the radial direction.

[0045] In addition, the magnification rate is a value in ppm obtained by dividing the deviation amount of the distance X from the design value from the center of the substrate by the distance X. The magnification rate includes: an isotropic magnification rate where the X component and the Y component of the displacement vector from the design position have the same amount; and a non-isotropic magnification rate where the components of the displacement vector from the design position have different amounts. In the case of bonding substrates to manufacture a stacked substrate, the difference in the magnification rates of the two substrates with respect to their respective design positions becomes the positional deviation amount between the two substrates in the stacked substrate.

[0046] In addition, the change in the magnification rate of the substrate caused by the deformation can be classified into an initial magnification rate, a planarization magnification rate, and a bonding process magnification rate according to the cause. The initial magnification rate is caused by stresses generated during the process of forming structures such as components and wirings on the wafer, anisotropy due to the crystal orientation of the substrate, differences in the rigidity of the structures formed on the substrate, etc., and can be known before bonding the substrates to form a stacked substrate.

[0047] On the other hand, the planarization magnification rate is generated by the following change in the magnification rate, i.e., the change in the magnification rate is generated by changing the warping state by bonding a substrate with warping or other deformations to other substrates. In addition, the planarization magnification rate is generated by the change in the warping state when the substrate is adsorbed on a flat holding member for bonding. Moreover, the bonding process magnification rate is the change in the magnification rate generated when the state of the substrate changes during the process of bonding the substrates. Therefore, the bonding process magnification rate often includes at least a part of the planarization magnification rate.

[0048] The changes in the planarization magnification and the bonding process magnification occur after the bonding of the starting substrates and are fixed at the time of forming the stacked substrate. The planarization magnification and the bonding process magnification can be calculated based on the state of the substrate before bonding, which includes information related to deformation such as warping, and the correlation with the magnification change in the case of planarizing or bonding the substrate, and thus based on the state of deformation of the substrate including the warping amount and the warping shape.

[0049] In addition, linear deformation includes orthogonal deformation. Orthogonal deformation is a deformation in which, when the X-axis and the Y-axis orthogonal to each other are set with the center of the substrate as the origin, the amount of the structure is larger the farther it is from the origin in the Y-axis direction, and the structure is displaced parallel to the X-axis direction from the designed position. This displacement amount is equal in each of a plurality of regions parallel to the X-axis and cutting the Y-axis, and the absolute value of the displacement amount becomes larger as it is farther from the X-axis. Moreover, the direction of displacement on the positive side of the Y-axis of the orthogonal deformation is opposite to the direction of displacement on the negative side of the Y-axis.

[0050] The three-dimensional deformation of the substrate is displacement in a direction other than the direction along the bonding surface of the substrate, that is, a direction crossing the bonding surface. The three-dimensional deformation includes bending generated in the whole or a part of the substrate by bending the substrate as a whole or locally. Here, "substrate bending" means that the substrate changes to a shape in which the surface of the substrate includes points that do not exist on the plane determined by three points on the substrate.

[0051] In addition, bending is a deformation in which the surface of the substrate becomes a curved surface, and includes, for example, warping of the substrate. In the present embodiment, warping means the deformation remaining in the substrate in a state where the influence of gravity is excluded. The deformation of the substrate to which the influence of gravity is applied to the warping is called flexure. In addition, the warping of the substrate includes global warping in which the whole substrate warps with substantially the same curvature, and local warping in which a local curvature change occurs in a part of the substrate.

[0052] The stacking unit 13 includes a bonding device 300 and a thinning device 400. The bonding device 300 has a function of aligning the substrates based on the alignment marks formed on the substrates, and a function of bonding the aligned substrates to form a stacked substrate.

[0053] In addition, "bonding" as used herein means permanently integrating two overlapping substrates so as to obtain a bonding strength exceeding a predetermined value. In addition, "bonding" includes, in the case where the bonded substrates include electrical connection terminals, electrically connecting the connection terminals of the two substrates to ensure an electrically conductive state between the substrates.

[0054] Furthermore, when bonding is performed using a bonding method that increases the bonding strength of the substrates to a predetermined value by annealing or the like, or when the substrates are electrically connected to each other by annealing or the like, the state in which the two substrates are temporarily bonded before the annealing, i.e., the state of temporary bonding, is sometimes also recorded as a bonded state. In this case, the temporarily bonded substrates can often be separated without loss and reused.

[0055] The thinning device 400 thins one surface of the stacked substrate formed by the bonding device 300 or the substrate stacked by the bonding device 300 by chemical mechanical polishing or the like. Thus, at the beginning of stacking, a part of wiring, elements, etc. located inside the stacked substrate or the single substrate can be located near the surface of the stacked substrate or the substrate, or exposed on the surface.

[0056] Thus, the circuit inside the laminated substrate can be connected to the lead frame, etc. In addition, light can be incident on the light receiving element formed in the substrate. Moreover, other substrates can be further stacked on the laminated substrate formed by stacking substrates to manufacture a laminated substrate with more than three layers. In addition, thinning by the thinning device 400 is sometimes not necessary.

[0057] The first measuring unit 14 measures the positional deviation between the substrates formed by the laminating unit 13. The first measuring unit 14 may be a unit dedicated to measuring the positional deviation of the laminated substrates, or may also serve as a measuring unit for alignment of the bonding apparatus 300.

[0058] Refer again Figure 1 The manufacturing device 10 includes a control device 130 . The control device 130 includes a general correction control unit 131 , an individual correction control unit 132 , and a determination unit 133 .

[0059] The universal correction control unit 131 instructs correction conditions to at least one of the processing unit 11 and the laminating unit 13, which should correct the substrate using the correction amount determined by the determination unit 133 described later, and performs correction. That is, the universal correction control unit 131 cooperates with at least one of the processing unit 11 and the laminating unit 13 to form a correction unit that performs stable correction with a constant correction amount until the determination unit 133 determines a new correction amount.

[0060] Furthermore, in the correction performed under the control of the universal correction control unit 131, when processing a plurality of substrates or forming a plurality of stacked substrates, a constant correction condition is repeatedly applied. Therefore, the positional deviation of the stacked substrate finally formed by the correction performed only under the control of the universal correction control unit 131 may not necessarily be less than a predetermined threshold.

[0061] Here, the correction conditions indicated by the general correction control unit 131 to at least one of the processing unit 11 and the lamination unit 13 include: information specifying which of the processing unit 11 and the lamination unit 13 performs the correction, and information related to the correction amount of the performed correction. In addition, the correction conditions include information related to the correction amount, and the information related to the correction amount includes at least a part of the position offset generated in the already formed laminated substrate. Such a correction amount is determined by the determination unit 133.

[0062] On the other hand, the individual correction control unit 132 determines correction conditions for reducing the position offset generated in the laminated substrate formed in the lamination unit 13, and indicates the determined correction conditions to at least one of the processing unit 11 and the lamination unit 13. Thereby, at least one of the processing unit 11 and the lamination unit 13 performs individual corrections for each substrate under the control of the individual correction control unit 132. That is, the individual correction control unit 132 cooperates with at least one of the processing unit 11 and the lamination unit 13 to form a correction unit that reduces the individual position offsets of the laminated substrates to below a predetermined threshold.

[0063] In addition, the correction conditions indicated by the individual correction control unit 132 to at least one of the processing unit 11 and the lamination unit 13 are determined each time a substrate is processed or each time a laminated substrate is formed, based on the measurement results obtained from the second measurement unit. The individual correction control unit 132 can correct not only the individual differences of the substrate itself, but also the processing errors of the processing unit 11 and the individual deformations caused by individual differences such as the lamination unit 13.

[0064] Furthermore, the correction performed by the individual correction control unit 132 corresponds to the difference between the position offset individually generated in a specific group of substrates forming one laminated substrate and the correction performed by the general correction control unit 131 with a predetermined correction amount. In addition, there are limits to the correction amounts of the corrections performed by the individual correction control unit 132. Therefore, when there is room to increase or decrease the correction amount performed by the general correction control unit 131, the correction amount performed by the general correction control unit 131 can also be determined so that the remaining correction amount after the correction performed by the general correction control unit 131 is within the range where the individual correction control unit 132 can completely correct the substrate.

[0065] In addition, after the correction performed by the general correction control unit 131, when it is determined that a large position offset that cannot be corrected by the correction performed by the individual correction control unit 132 is generated, it is also possible to study all other countermeasures such as changing the combination of bonded substrates. In addition, in addition to determining the correction amount for each substrate, the individual correction control unit 132 can also provide a determination unit 134 for determining whether individual corrections are required for the deformations in each substrate, and determine whether individual corrections are required for each substrate.

[0066] Whether correction is needed or not is determined by the determination unit 134 based on whether the measurement result obtained from the second measurement unit 12 is smaller than a preset threshold. When it is predicted that the position offset amount in the laminated substrate formed by correcting using the correction amount executed by the general correction control unit 131 does not exceed the preset threshold, the individual correction executed by the individual correction control unit 132 can also be omitted. In addition, when the measurement result obtained from the second measurement unit 12 is larger than the preset threshold, the individual correction control unit 132 can also determine a correction method and a correction amount that make the position offset amount generated in the laminated substrate smaller than the threshold.

[0067] Here, the threshold for the position offset that determines whether correction is needed can also be, for example, the allowable position offset amount preset for the laminated substrate as a product. In addition, the threshold can also be the position offset amount that establishes the range of electrical conduction between the substrates in the formed laminated substrate. For example, it is the offset amount when at least a part of all the connection terminals between the substrates are in contact, and is in a state where only the bonding strength for maintaining the contact of the connection terminals is obtained.

[0068] In addition, in the manufacturing apparatus 10, for example, a plurality of film forming apparatuses 100, circuit forming apparatuses 200, etc. can be respectively provided in the processing unit 11, and substrates can be processed in parallel. In addition, a plurality of bonding apparatuses 300 and thinning apparatuses 400 can be provided in the lamination unit 13 of the manufacturing apparatus 10, and the lamination and thinning of the substrates can be processed in parallel. Moreover, by adjusting the number of the apparatuses arranged, the manufacturing efficiency of the laminated substrate can be improved in such a way that the processing speed of the entire manufacturing apparatus 10 is made consistent.

[0069] Moreover, since the film forming apparatus 100, the circuit forming apparatus 200, the bonding apparatus 300, and the thinning apparatus 400 operate independently, it is not necessary to arrange all of the film forming apparatus 100, the circuit forming apparatus 200, the bonding apparatus 300, and the thinning apparatus 400 in the same place. For example, the processing unit 11 and the lamination unit 13 can be arranged in separate facilities, and the substrates processed by the processing unit 11 can be transported to the lamination unit 13 to manufacture the laminated substrate.

[0070] However, the control device 130 controls both the processing unit 11 and the lamination unit 13 in a unified manner. Therefore, for example, the information detected in the lamination unit 13 is sometimes used for the control of the processing unit 11. Therefore, it is preferable that the control device 130 is in a state capable of communicating with both the processing unit 11 and the lamination unit 13. The communication between the control device 130 and other devices can also use a public line or a dedicated line. In addition, the information to be transmitted when processing the substrate can be written into the substrate in the processing unit 11, and the information read from the substrate can be transmitted to the control device 130 in the lamination unit 13.

[0071] Figure 2 This is a flowchart outlining the steps for manufacturing a laminated substrate by the manufacturing apparatus 10. In the manufacturing apparatus 10, first, the processing unit 11 processes a plurality of substrates (step S11). The number of substrates to be processed is the number of sheets sufficient to manufacture a plurality of laminated substrates obtained by processing at least two substrates bonded together.

[0072] Next, under the control of the individual correction control unit 132, the substrates are individually corrected before being carried into the lamination unit 13 (step S12). The correction performed here is determined by the individual correction control unit 132 on a substrate-by-substrate basis with reference to the measurement results of the second measurement unit 12.

[0073] Then, the lamination unit 13 bonds the substrates by the bonding device 300 to form a laminated substrate (step S13). Moreover, before being carried out of the manufacturing apparatus 10, the first measurement unit 14 measures the positional offset amount between the substrates of the formed laminated substrate (step S14).

[0074] The operations of the above steps S11 to S14 are repeated until a plurality of laminated substrates, for example, about two to ten laminated substrates are formed (step S15: No). Thus, the first measurement unit 14 can measure the generated positional offset amount based on the plurality of laminated substrates formed in the lamination unit 13. In this way, if the positional offset amount is measured based on a predetermined number of laminated substrates (step S15: Yes), the determination unit 133 refers to the measurement results of the first measurement unit 14 and calculates and determines the correction amount of the correction to be executed by the general correction control unit 131 in at least any one of the processing unit 11 and the lamination unit 13 in order to reduce the positional offset amount of the laminated substrate (step S16).

[0075] In the present embodiment, an example of correcting the substrates in both the processing of the substrates by the processing unit 11 and the bonding of the substrates by the lamination unit 13 has been described. In this case, the determination unit 133 determines the correction assigned to the processing unit 11 and the correction assigned to the lamination unit 13 among the common corrections determined in step S16, and outputs them to the processing unit 11 and the lamination unit 13. The allocation of the correction in the processing unit 11 and the correction in the lamination unit 13 is based on the type of correction, for example, whether it is to correct linear deformation or non-linear deformation, etc., and the amount of correction, and is allocated based on predetermined allocation conditions. The allocation conditions are set based on prior experiments and simulations and are stored in the memory of the determination unit 133.

[0076] Here, the determination unit 133 causes the correction amount of the correction borne by the general correction control unit 131 to be a correction amount commonly applied to the formation of a plurality of laminated substrates when manufacturing laminated substrates after this time. Therefore, first, the processing of the substrates by the processing unit 11 is started, which further adds the correction executed by the general correction control unit 131 (step S17).

[0077] Next, correction conditions during lamination by the laminating unit 13, which are further added with corrections executed by the general correction control unit 131, are set (step S18), and the substrates corrected based on these correction conditions are laminated (step S21). Details of these steps S17 to S21 will be described later.

[0078] In addition, the corrections commonly executed by the general correction control unit 131 may include corrections for position offsets generated during the process of bonding the substrates in the laminating unit 13, and thus also include corrections for position offsets that have not yet occurred at this stage. Further, the corrections commonly executed by the general correction control unit 131 for a plurality of substrates may include corrections for position offsets generated when thinning one of the substrates in the laminated substrates, and thus this also includes corrections for position offsets that have not occurred at the bonding stage.

[0079] However, if the general correction control unit 131 executes corrections including the amount of position offset that has not yet occurred, there is a possibility that the individual correction control unit 132 that determines the correction amount on the side of the laminating unit 13 executes corrections that cancel out the corrections executed by the general correction control unit 131. Therefore, when it is determined to correct the position offset generated during the bonding process before the substrate is transferred into the laminating unit 13, it is preferable that the determination unit 133 also notifies the individual correction control unit 132 of the correction amount determined by the general correction control unit 131 and removes it from the object of the corrections executed by the individual correction control unit 132.

[0080] In addition, the position offset of the laminated substrates is the difference in the relative positions of the substrates, so it is sufficient to correct only one of the two substrates to be bonded. However, both of the substrates to be bonded may also be corrected in cases where the correction amount is large, etc. Moreover, before the determination unit 133 determines the correction amount of the general correction control unit 131, an initial value determined through experiments, analysis, etc. may also be set for the general correction control unit 131.

[0081] As described above, in the manufacturing apparatus 10, the determination unit 133 allocates control of corrections executed with a common correction amount for the manufacture of a plurality of laminated substrates to the general correction control unit 131. Therefore, it is preferable that the corrections allocated to the general correction control unit 131 are corrections for deformations that are common and stable or the cause of normally occurring position offsets for a plurality of laminated substrates. In other words, it is preferable that the corrections executed by the general correction control unit 131 include at least a part of the position offsets generated in a plurality of laminated substrates and are corrections for deformations with high reproducibility for the manufacture of a plurality of laminated substrates.

[0082] Next, the operations of each part of the manufacturing apparatus 10 will be individually described. Figure 3 It is a flowchart showing the operation steps of the processing unit 11 and is also Figure 2An example of step S17. The processing unit 11 first sets correction conditions so as to perform the corrections that should be performed simultaneously when the processed substrate is fed in. The set correction conditions include the correction method performed in the processing unit and the correction amount when performing this correction method (step S101). Although the correction conditions set here can be obtained from either the general correction control unit 131 or the individual correction control unit 132 of the control device 130, in this embodiment, they are obtained from the general correction control unit 131.

[0083] Next, a wafer as the material of the substrate is loaded into the processing unit 11 for which the correction conditions have been set (step S102). The loaded wafer may be an unprocessed bare wafer or a substrate in the process of having a structure formed thereon. Then, the processing unit 11 performs the correction set by the control device 130, and forms structures such as elements and wirings on the wafer by film formation performed by the film formation device 100 and patterning using the circuit formation device 200, thereby processing the substrate (step S103).

[0084] Next, the control device 130 investigates whether there are other elements or wirings that should be further formed on the substrate on which elements or wirings have been formed (step S104). In the case where there are remaining patterns to be formed (step S104: No), the processing unit 11 repeats film formation performed by the film formation device 100 and patterning using the circuit formation device 200 or the like to form elements or wirings on the substrate.

[0085] In the case where there are no patterns to be formed on the substrate (step S104: Yes), the control device 130 ends the processing of the substrate by the processing unit 11, for example, checks whether there are still wafers belonging to the same batch that need to have circuits formed in the next step (step S105). Here, in the case where there are remaining wafers to form circuits (step S105: No), the control device 130 loads this wafer into the processing unit 11 (step S102), and repeats the above steps S103 to S105.

[0086] In step S105, in the case where it is determined that there are no remaining wafers to form circuits (step S105: Yes), the control device 130 ends the process of processing the substrate by the processing unit 11. Thus, in the processing unit 11, multiple substrates are processed using the correction conditions set in step S101.

[0087] Figure 4 It is a schematic diagram showing an example of the film formation device 100 of the processing unit 11. The film formation device 100 has a chamber 110, and high-frequency electrodes 122 and 124 disposed in the chamber 110.

[0088] The chamber 110 has a supply hole 112 through which a source gas flows in, and an exhaust hole 114 for exhausting the source gas. Among the pair of high-frequency electrodes 122 and 124, the high-frequency electrode 124 disposed on the upper side in the figure also serves as a substrate holder. Therefore, the film forming apparatus 100 is a plasma CVD apparatus that forms a plasma exposing the substrate 510 to the source gas by supplying the source gas into the chamber 110 and supplying high-frequency power to the high-frequency electrodes 122 and 124, thereby enabling a composition derived from the source gas to be deposited on the surface of the substrate 510.

[0089] Here, by changing the flow rate of the source gas supplied to the film forming apparatus 100, the amount of high-frequency power applied to the high-frequency electrodes 122 and 124, the substrate temperature, etc., the deformation generated on the substrate 510 also changes. Therefore, by appropriately setting the film forming conditions for the film forming apparatus 100, the substrate can be corrected in the film forming step of the processing unit 11.

[0090] Figure 5 It is a schematic diagram showing an example of the circuit forming apparatus 200 of the processing unit 11. The circuit forming apparatus 200 has a light source 210, a photomask 220, a reduction optical system 230, and a moving stage 240. In the circuit forming apparatus 200, the substrate 510 is mounted on the moving stage 240.

[0091] In the circuit forming apparatus 200, the irradiation light emitted from the light source 210 passes through the photomask 220 and the reduction optical system, and is irradiated onto the substrate 510 on the moving stage 240. The photomask 220 has a light-shielding film or a through hole of a pattern to be formed on the substrate, and shapes the emitted light from the light source 210 into a light beam having a pattern shape.

[0092] The reduction optical system 230 converges the light beam and irradiates a part of the substrate 510. As a result, the resist applied to the substrate 510 is exposed to light, and a resist mask having a shape corresponding to the pattern of the photomask 220 is formed on the surface of the substrate 510. Further, by repeating the movement of the moving stage 240 and the exposure, the pattern of the photomask 220 can be transferred to the entire surface of the substrate 510 multiple times. In addition, a sacrificial layer such as a resist mask may be formed before the functional layer or after the functional layer depending on the characteristics of the structure formed on the substrate.

[0093] Using the resist mask formed in this way, a functional layer can be formed on the surface of the substrate 510 by methods such as stripping and etching. Further, by repeating film formation and patterning, a circuit region in which elements and wirings are mixed is formed on the substrate 510. Here, by changing the reduction ratio of the reduction optical system 230, the magnification of the circuit region formed on the substrate 510 can be adjusted.

[0094] In addition, by changing the amount of movement of the moving stage 240, the position where the circuit region is formed on the substrate 510 can be changed. Further, by tilting or deforming the photomask 220 or the like, the pattern formed on the substrate 510 can be deformed. Thus, even in the circuit forming apparatus 200, the correction conditions of the processing unit 11 can be changed.

[0095] However, for the correction in the circuit forming apparatus 200, it is sometimes difficult to finely change the correction conditions on a wafer-by-wafer basis. Therefore, the correction amount in the circuit forming apparatus 200 is suitable for the case of common correction for a plurality of substrates indicated by the determination unit 133 to the general correction control unit 131.

[0096] In addition, in the process of forming a pattern by the processing unit 11, in addition to the circuit forming apparatus 200 including an electron beam lithography apparatus, a dry etching apparatus or the like can also be used. Further, a coater for coating a resist material or the like, an ashing apparatus for removing the resist material, or the like may be integrally provided in the processing unit 11.

[0097] Figure 6 It is a flowchart showing the substrate stacking steps in the stacking unit 13 of the manufacturing apparatus 10, and is also an example of the stacking steps including step S18 and step S21. In the stacking unit 13, first, a substrate processed by the processing unit 11 is loaded (step S201). Here, the control device 130 checks whether the loaded substrate is the second one (step S202). If the loaded substrate is not the second one (step S202: No), the control returns to step S201, and another substrate is loaded. Figure 2 When it is determined in step S202 that the loaded substrate is the second one (step S202: Yes), the control device 130 performs common correction on at least one of the two loaded substrates when stacking them (step S203). The correction conditions set in step S203 are the common correction in the stacking unit 13 determined in step S16, and may include information related to both the correction method and the correction amount of the substrate.

[0098] And, for each of the substrates processed by the processing unit 11, the individual correction control unit 132 determines whether individual correction for the substrate is required with reference to the measurement results of the second measurement unit 12 (step S207). Here, when the deformation generated in each substrate is less than a predetermined threshold value (step S207: No), the individual correction by the control of the individual correction control unit 132 is omitted, and the process proceeds to step S204. Figure 2 The common correction in the stacking unit 13 determined in step S16 may include information related to both the correction method and the correction amount of the substrate.

[0099] And, for each of the substrates processed by the processing unit 11, the individual correction control unit 132 determines whether individual correction for the substrate is required with reference to the measurement results of the second measurement unit 12 (step S207). Here, when the deformation generated in each substrate is less than a predetermined threshold value (step S207: No), the individual correction by the control of the individual correction control unit 132 is omitted, and the process proceeds to step S204.

[0100] In step S19, when it is determined that the substrate requires individual correction (step S207: Yes), the individual correction control unit 132 individually corrects the substrate (step S208), and then proceeds to step S204.

[0101] The correction method in the set correction conditions includes information related to the deformation method of the pattern formed on the substrate, such as magnification, reduction, width reduction or widening in a specific direction, and twisting. In addition, the correction amount in the correction conditions includes values representing the degree of the above magnification and deformation amount.

[0102] In addition, the correction conditions set here are determined, for example, in the stacking unit 13 by measuring the positions of the alignment marks on the substrate. Therefore, the correction conditions set in the stacking unit 13 include correction conditions for correcting the inherent deformation of each substrate. Moreover, the correction conditions set in the stacking unit 13 may also include correction conditions obtained from the outside by the control device 130.

[0103] Next, the control device 130 performs alignment and bonding of the substrates under the set correction conditions to form a stacked substrate (step S204). Moreover, the control device 130 measures the positional deviation between the substrates in the formed stacked substrate (step S205). Information related to the positional deviation obtained by this measurement is referred to by the processing unit 11 through the control device 130 and is used in the setting of the correction conditions of the processing unit 11 (step S101).

[0104] The stacked substrate thus formed is taken out from the stacking unit 13, and the control device 130 checks, for example, whether there are still substrates of the same batch that have not been stacked (step S206). When there are unstacked substrates remaining (step S205: No), the control device 130 repeats the steps of steps S201 to S206 above. When it is determined in step S205 that there are no remaining unstacked substrates (step S205: Yes), the control device 130 ends the control of the stacking unit 13.

[0105] As described above, the correction amount of the correction executed by the individual correction control unit 132 reduces the amount of the correction executed by the general correction control unit 131. In addition, the common correction in step S203 and the individual correction in step S208 may be executed simultaneously.

[0106] Figure 7 It is a schematic diagram of the substrates 510 and 520 processed in the processing unit 11. Each of the substrates 510 and 520 has a notch 514, 524, a plurality of circuit regions 516, 526, and a plurality of alignment marks 518, 528.

[0107] The circuit regions 516 and 526 are periodically arranged along the planar direction of the substrates 510 and 520 on the surfaces of the substrates 510 and 520. Structures such as wirings, components, and protective films are provided in each of the circuit regions 516 and 526. In addition, connection portions such as pads and bumps that serve as electrical connection terminals when one substrate 510 is stacked on the other substrate 520 are also arranged in the circuit regions 516 and 526. Such connection portions are also structures formed on the surfaces of the substrates 510 and 520.

[0108] The alignment marks 518 and 528 are also an example of structures formed on the surfaces of the substrates 510 and 520, and are arranged at predetermined relative positions with respect to connection portions and the like of the circuit regions 516 and 526. Thereby, the alignment marks 518 and 528 can be used as indicators to align the circuit regions 516 and 526.

[0109] In the substrates 510 and 520, scribe lines 512 and 522 exist between the plurality of circuit regions 516 and 526. The scribe lines 512 and 522 are not structures, but are imaginary cutting lines that are cut when the stacked substrate is cut into stacked semiconductor devices. In addition, the scribe lines 512 and 522 are also regions that disappear from the stacked substrate as the saw blade for cutting. Therefore, the alignment marks 518 and 528 that are used in the process of stacking the substrates 510 and 520 and are not required after the completion of the stacked semiconductor device can also be arranged on the scribe lines 512 and 522.

[0110] The stacked substrate formed by stacking the substrates 510 and 520 with other substrates is cut along the scribe lines and thus separated, and each becomes a stacked semiconductor device. The stacked substrate can also be formed by further stacking a stacked substrate that has itself been formed by stacking the substrates 510 and 520 on other substrates.

[0111] Figure 8 It is a schematic cross-sectional view of a substrate holder 530 that holds the substrate 510 and is conveyed together with the substrate 510 when the substrate 510 is processed in the stacking portion 13. The substrate holder 530 has a thickness and a diameter larger than those of the substrate 510, and has a flat adsorption surface 532. The adsorption surface 532 adsorbs the substrate 510 through an electrostatic chuck, a vacuum chuck, etc., makes the substrate 510 integral with the substrate holder 530, and maintains the substrate 510 in a flat state.

[0112] Figure 9FIG. 0 is a schematic cross-sectional view of a substrate holder 540 that holds the substrate 520 and is conveyed together with the substrate 520 when the substrate 520 is processed in the stacking unit 13. The substrate holder 540 has a thickness and a diameter larger than those of the substrate 520. The adsorption surface 542 adsorbs the substrate 520 through an electrostatic chuck, a vacuum chuck, etc., and integrates the substrate 520 with the substrate holder 540.

[0113] In addition, the shape of the adsorption surface 542 of the substrate holder 540 that adsorbs the substrate 520 is convex with a central protrusion. The substrate 520 held by such a substrate holder 540 also protrudes from the center. Therefore, above the dotted line A shown in the figure, the surface of the substrate 520 is enlarged and becomes a state of increased magnification. In addition, below the dotted line A in the figure, the surface of the substrate 520 is reduced and relatively becomes a state of reduced magnification.

[0114] Thus, when bonding the substrate 520 to another substrate, sometimes the increase in the magnification of the bonding surface of the substrate holder 540 also becomes an object to be corrected. In addition, the increase in the magnification of the bonding surface of the substrate holder 540 can also be used as a correction method for the substrate 520. In this case, multiple substrate holders 540 with different curvatures of the adsorption surface 542 can be prepared and used when individually adjusting the magnification of the bonding surface of the substrate 520. In addition, as a device for performing common correction controlled by the general correction control unit 131, a substrate holder 540 with a constant curvature can also be used.

[0115] Moreover, in the above example, the adsorption surface 542 of the substrate holder 540 has a shape with a central protrusion. However, a substrate holder 540 with a central portion recessed with respect to the peripheral portion of the adsorption surface 542 can also be prepared to hold the substrate 520, thereby reducing the magnification of the substrate 520 surface.

[0116] Figure 10 FIG. 13 is a schematic cross-sectional view of the bonding device 300. The bonding device 300 includes a frame 310, an upper worktable 322, and a lower worktable 332.

[0117] The frame 310 has a horizontal bottom plate 312 and a top plate 316, respectively. The top plate 316 of the frame 310 supports the upper worktable 322 fixed downward. The upper worktable 322 includes a vacuum chuck, an electrostatic chuck, etc., and adsorbs and holds the substrate holder 530 carried in while holding the substrate 510.

[0118] In addition, for the top plate 316, a microscope 324 and an activation device 326 are fixed to the side of the upper workbench 322. The microscope 324 observes the upper surface of the substrate 520 mounted on the lower workbench 332. The activation device 326 generates plasma to activate the upper surface of the substrate 520 held on the lower workbench 332.

[0119] An X-direction drive unit 331, a Y-direction drive unit 333, a lifting drive unit 338, and a rotation drive unit 339 are arranged in sequence and stacked on the bottom plate 312. The X-direction drive unit 331 moves parallel to the bottom plate 312 as shown by the arrow X in the figure.

[0120] The Y-direction drive unit 333, as shown by the arrow Y in the figure, moves on the X-direction drive unit 331, parallel to the bottom plate 312 and in a direction different from that of the X-direction drive unit 331. By combining the operations of the X-direction drive unit 331 and the Y-direction drive unit 333, the lower workbench 332 performs a planar movement parallel to the bottom plate 312.

[0121] The lifting drive unit 338, as shown by the arrow Z in the figure, vertically displaces the rotation drive unit 339 relative to the bottom plate 312. In addition, the rotation drive unit 339 rotates the lower workbench 332 around an axis perpendicular to the bottom plate 312. The amount of movement of the lower workbench 332 generated by the respective operations of the X-direction drive unit 331, the Y-direction drive unit 333, the lifting drive unit 338, and the rotation drive unit 339 is measured with high precision using an interferometer (not shown).

[0122] The Y-direction drive unit 333 supports the microscope 334 and the activation device 336 located on the side of the lower workbench 332 together with the above-mentioned lifting drive unit 338, rotation drive unit 339, and lower workbench 332. The microscope 334 and the activation device 336 move together with the lower workbench 332 in a direction parallel to the bottom plate 312 according to the operations of the X-direction drive unit 331 and the Y-direction drive unit 333. In addition, a swing drive unit that swings the lower workbench 332 around a rotation axis parallel to the bottom plate 312 can be further provided between the lower workbench 332 and the rotation drive unit 339.

[0123] Thus, the microscope 334 observes the lower surface of the substrate 510 held by the upper workbench 322. The activation device 336 generates plasma to activate the lower surface of the substrate 510 held by the upper workbench 322.

[0124] In addition, in Figure 10In the state shown, the substrate holder 530 having a flat adsorption surface 532 of the substrate 510 is held by the upper worktable 322. In addition, the substrate holder 540 having a convex adsorption surface 542 for holding the substrate 520 is held by the lower worktable 332. Further, the microscopes 324 and 334 are focused on each other, and the control device 130 calibrates the relative positions of the microscopes 324 and 334.

[0125] Figure 11 It is a flowchart showing the steps of the stacking operation of the bonding device 300. For a pair of substrates 510 and 520 carried into the bonding device 300, the control device 130 first uses the microscopes 324 and 334 to detect the positions of the plurality of alignment marks 518 and 528 on the substrates 510 and 520 respectively (step S301).

[0126] Figure 12 It is a schematic cross-sectional view showing the state of the bonding device 300 in the above step S301. As shown in the figure, the control device 130 operates the X-direction drive unit 331 and the Y-direction drive unit 333, thereby moving the lower worktable 332 and the microscope 334.

[0127] Thereby, the microscope 324 becomes in a state where it can observe the alignment mark 528 of the substrate 520. Based on the amount of movement of the lower worktable 332 until the alignment mark 528 of the observation object reaches a predetermined position in the field of view of the microscope 324, the control device 130 can accurately detect the position of the alignment mark 528. Similarly, by observing the alignment mark 518 of the substrate 510 held by the upper worktable 322 with the microscope 334, the control device 130 can accurately detect the position of the alignment mark 518 of the substrate 510.

[0128] In addition, after laminating the substrates 510 and 520 to form a laminated substrate, the microscopes 324 and 334 as described above can also observe the alignment marks 518 and 528 through the substrates 510 and 520. Therefore, the microscopes 324 and 334 can also be used as the first measurement unit 14 in the manufacturing device 10. In this case, after laminating the substrates 510 and 520 using the bonding device 300, the position deviation of the laminated substrate can be measured as it is within the bonding device 300.

[0129] Next, the control device 130 calculates the relative positions of the substrates 510 and 520 based on the positions of the alignment marks 518 and 528 detected in step S301 (step S302). That is, by using the microscopes 324 and 334 with known initial relative positions to detect the positions of the alignment marks 518 and 528 on the substrates 510 and 520, the control device 130 calculates the relative positions of the substrates 510 and 520.

[0130] Therefore, when aligning the substrates 510 and 520, the relative movement amount of the substrates 510 and 520 can be calculated such that the positional deviation between the corresponding alignment marks 518 and 528 in the substrates 510 and 520 becomes below the threshold value, or such that the positional deviation of the corresponding circuit regions 516 and 528 or the connection portions between the substrates 510 and 520 becomes below the threshold value.

[0131] Next, the control device 130 causes the activation devices 326 and 336 to scan the surfaces of the substrates 510 and 520 (step S303). Figure 13 It is a schematic cross-sectional view showing the state of the bonding device 300 in step S303. As shown in the figure, the control device 130 operates the activation devices 326 and 336 to generate plasma, and moves the lower workbench 332 to expose the surfaces of the substrates 510 and 520 to the plasma. Thereby, the bonding surfaces of the substrates 510 and 520 are highly purified and their chemical activity is increased.

[0132] In addition to the method of exposing to plasma, the activation of the bonding surface can also be achieved by sputter etching using an inert gas, an ion beam, a high-speed atomic beam, etc. to activate the surfaces of the substrates 510 and 520. When using an ion beam or a high-speed atomic beam, the entire bonding device 300 is placed under reduced pressure. Additionally, the substrates 510 and 520 can be activated by ultraviolet irradiation, an ozone asher, etc. Moreover, for example, a liquid or gas etchant can be used to chemically purify the surfaces of the substrates 510 and 520 to thereby achieve activation. After the surfaces of the substrates 510 and 520 are activated, the surfaces of the substrates 510 and 520 can be hydrophilized using a hydrophilization device.

[0133] Furthermore, in the present embodiment, although an example of providing the activation devices 326 and 336 inside the bonding device 300 is shown, they can also be arranged in a place different from the bonding device 300, and the activated substrates 510 and 520 can be carried into the bonding device 300. Additionally, if one of the bonding surfaces of the substrates 510 and 520 is activated, it is sometimes possible to bond the substrates 510 and 520 without activating the other.

[0134] Next, the control device 130 aligns the substrates 510 and 520 (step S304). Figure 14It is a schematic cross-sectional view showing the state of the bonding device 300 in step S304. As shown in the figure, for the alignment of the substrates 510 and 520, the lower worktable 332 is moved based on the amount of movement of the substrates 510 and 520 detected in step S301, so that the position offset of the alignment marks 518 and 528 of the substrates 510 and 520 respectively becomes below the threshold. In addition, at this stage, the position offset components that cannot be eliminated during the movement (X - Y) and rotation (θ) of the lower worktable 332 are the objects to be corrected.

[0135] If the substrates 510 and 520 are aligned, the control device 130 causes a part of the substrates 510 and 520 to contact each other to form a starting point for bonding (step S305). Figure 15 It is a schematic cross-sectional view showing the state of the bonding device 300 in step S305. As shown in the figure, the control device 130 operates the lifting drive unit 338 to bring a part of the bonding surfaces of the substrates 510 and 520 into contact with each other, thereby forming a starting point for bonding.

[0136] Figure 16 It is a diagram schematically showing the formation of the starting point C in the bonded substrates 510 and 520. As described with reference to Figure 9 As described above, if the substrate 520 with a protrusion in the center due to the shape of the substrate holder 540 is brought close to and contacts the flat substrate 510 held by the flat substrate holder 530, the substrates 510 and 520 initially contact at a part near the center, forming the starting point C.

[0137] Then, if one of the substrate holders 530 and 540, for example, the substrate holder 530's adsorption of the substrate 510 is released, the area where the substrates 510 and 520 contact expands from the initially contacted part in the center toward the periphery, and soon the substrates 510 and 520 are in a state of overall contact. In this way, by first making a part of the substrates 510 and 520 contact and then expanding the contacted area toward the periphery, it is possible to prevent the situation where bubbles or the like remain between the substrates 510 and 520 during the lamination process of the substrates 510 and 520.

[0138] As described above, since the surfaces of the substrates 510 and 520 are activated, in the contacted area, the substrates 510 and 520 are bonded by intermolecular forces. In this way, a starting point for bonding is formed in a part of the substrates 510 and 520.

[0139] Next, the control device 130 releases the holding of one of the substrates 510 and 520, for example, releases the holding of the substrate 510 held by the upper worktable 322 by the substrate holder 530 (step S306). As a result, a bonding wave is generated in which the bonding area of the substrates 510 and 520 expands sequentially toward the edges of the substrates 510 and 520, and soon the substrates 510 and 520 are integrally bonded.

[0140] After the control device 130 releases the holding of the substrate 510 in step S306, it monitors the expansion of the bonding area. Thus, for example, when the expanded bonding area reaches the edges of the substrates 510 and 520, it is detected that the bonding of the substrates 510 and 520 is completed (step S307: Yes). In other words, before the bonding of the substrates 510 and 520 is completed (step S307: No), the control device 130 fixes the lower workbench 332 and continues to expand the bonding area.

[0141] In addition, as described above, during the process of expanding the contact area of the substrates 510 and 520, the control device 130 may also locally or periodically release the holding of the substrate 510 by the substrate holder 530. Alternatively, instead of releasing the substrate 510 on the upper workbench 322, the substrate 520 may be released on the lower workbench 332, thereby bonding the substrates 510 and 520.

[0142] Moreover, both of the two substrates 510 and 520 may be released. Further, the substrates 510 and 520 may be continuously held on both the upper workbench 322 and the lower workbench 332, and the upper workbench 322 and the lower workbench 332 may be brought closer to each other, thereby bonding the substrates 510 and 520.

[0143] During the bonding process of the substrates 510 and 520 accompanied by the generation of the bonding wave as described above, a new position shift may occur. Regarding the generation process of such a position shift, it will be described below with reference to Figures 17 - 20 for illustration.

[0144] Figure 17 An area Q near the boundary K between the contact area where the substrates 510 and 520 have already come into contact and the non-contact area where the substrates 510 and 520 have not yet come into contact but are about to come into contact during the bonding process of the bonding device 300 is shown enlarged. As shown in the figure, during the process of the contact area of the two overlapping substrates 510 and 520 expanding in area from the center to the periphery, the boundary K moves from the center side of the substrates 510 and 520 to the periphery side. Near the boundary K, the substrate 510 released from the holding of the substrate holder 530 undergoes stretching. Specifically, at the boundary K, with respect to the central plane in the thickness direction of the substrate 510, the substrate 510 stretches on the lower surface side in the figure of the substrate 510, and the substrate 510 contracts on the upper surface side in the figure.

[0145] Thus, as shown by the dashed lines in the figure, in the substrate 510, at the outer ends of the region joined to the substrate 520, it deforms in a manner that expands relative to the substrate 520 at a magnification corresponding to the design specifications of the circuit region 516 on the surface of the substrate 510. Therefore, as shown by the offset represented as a dashed line in the figure, a position offset caused by the amount of expansion of the substrate 510, i.e., a position offset due to the difference in magnification, occurs between the lower substrate 520 held by the substrate holder 540 and the upper substrate 510 released from the substrate holder 530.

[0146] As Figure 18 shown, if the substrates 510 and 520 in states with different amounts of deformation are brought into contact and joined, the magnification of the expansion of the substrate 510 is fixed. Moreover, as Figure 19 shown, for the amount of expansion of the substrate 510 fixed by joining, the closer the boundary K moves toward the outer periphery of the substrates 510 and 520, the greater the accumulation.

[0147] Figure 20 It is a diagram showing the distribution of the position offset components caused by the magnification difference between the two substrates 510 and 520 constituting the stacked substrate 550. The illustrated offset has an offset amount that increases radially in the plane direction from the center point of the stacked substrate 550. Therefore, in the entire substrates 510 and 520, the difference in magnification becomes significant.

[0148] The magnitude of the position offset generated during the joining process as described above can be predicted based on physical quantities such as the rigidity of the joined substrates 510 and 520 and the viscosity of the ambient gas sandwiched between the substrates 510 and 520. In addition, the position offset caused by such reasons appears stably in the joining of multiple stacked substrates 550 if the specifications of the joined substrates 510 and 520, the joining conditions of the joining device 300, etc. are constant. Therefore, when joining multiple stacked substrates 550, all the stacked substrates 550 can be effectively corrected using the common correction conditions indicated by the general correction control unit 131.

[0149] In addition, for example, when a difference in magnification occurs between the substrates 510 and 520 due to an error in the optical system for scribing the pattern of the circuit forming device 200, a component of the position offset as Figure 20 shown also occurs. In other words, when the position offset caused by the difference in magnification of the stacked substrate 550 is stably measured in the first measurement unit 14, the circuit forming device 200 optically changes the magnification of the pattern formed by the exposure device under the control of the correction conditions indicated by the general correction control unit 131. Thus, multiple stacked substrates 550 can be corrected with a common correction amount.

[0150] Moreover, in an exposure apparatus, exposure is often repeated multiple times to form one layer. In such a case, by adjusting the interval between exposure irradiations on the wafer or the interval between chips, the structures can be arranged in a manner that cancels out the initial magnification and the deformation of the substrate generated during bonding. Additionally, when the position of the structure is displaced due to the deformation generated during bonding in the substrate 510 whose holding by the substrate holder is released, in the substrate 520 whose holding by the substrate holder is not released during bonding, the exposure conditions are set so that a structure is formed at a position corresponding to the position of the displaced structure of the substrate 510. Thereby, the amount of positional deviation caused by the difference in deformation between wafers can be made less than a specified threshold. When using the exposure apparatus as the circuit forming apparatus 200, the magnification component, orthogonal component, and non-linear component of the deformation can be individually corrected. Thus, the correction based on the exposure apparatus includes adjusting the exposure position of at least one of the substrates so that the amount of positional deviation when the two substrates 510 and 520 are bonded becomes below the threshold.

[0151] In addition, as a reference Figures 17 - 20 The amount of deformation of the substrate 510, which is the cause of the positional deviation described with reference to Figure 20 depends on the rigidity of the substrate 510. Therefore, when a rigidity distribution is generated in the substrate 510 due to crystal anisotropy of the wafer or the like, the crystal anisotropy is also reflected in the change in magnification shown in

[0152] In addition, as described with reference to Figures 17 - 20 one of the bonded substrates 510 and 520, that is, the upper substrate 510 in the above example, is released from the holding by the substrate holder 530 during the bonding process. Therefore, when correcting the magnification of the substrate 520 using the shape of the adsorption surface 542 of the substrate holder 540, the correction is performed on the substrate that has not had its holding released.

[0153] In the above-described series of processes for manufacturing the stacked substrate 550, the positional deviation generated in the stacked substrate 550 includes a component caused by the initial deformation of each of the substrates 510 and 520, and a component caused by the deformation generated during the bonding process. Here, the initial deformation generated in the individual substrates 510 and 520 can be individually detected using the microscopes 324 and 334 in the bonding apparatus 300. Therefore, by removing the initial deformation of each of the substrates 510 and 520 from the positional deviation measured from the stacked substrate 550 by the first measurement unit 14, the deformation component generated during the bonding process can be calculated.

[0154] For each of the components of the deformation thus calculated, the determination unit 133 assigns the deformation that commonly appears in the plurality of substrates to the general correction control unit 131, whereby the load of the correction executed by the control of the individual correction control unit 132 can be reduced. The correction executed by the individual correction control unit 132 is, for example, executed in the stacking unit 13. Therefore, the burden on the individual correction control unit 132 is reduced, and thus the processing of the stacking unit 13 can be speeded up.

[0155] Therefore, for example, for each of the deformation components generated during the above bonding process and the initial deformation components of the respective substrates 510 and 520, the determination unit 133 can also calculate the difference in deformation between the individual substrates 510 and 520, for example, as 3σ (σ is the standard deviation). Thereby, the level of reproducibility of the deformation can be evaluated. Therefore, the determination unit 133 determines, by a preset threshold value, matters to be corrected that are assigned to the general correction control unit 131 and commonly corrected in the manufacture of the plurality of stacked substrates 550.

[0156] For example, the position offset component caused by the difference in magnification of the substrates includes many components that commonly appear in the same batch of substrates 510 and 520 processed by the same processing unit 11 or in the same batch of stacked substrates 550 stacked using the same stacking unit 13. Therefore, the common components of the deformation that are manifested as position offsets can be efficiently corrected by the control of the general correction control unit 131.

[0157] That is, the correction commonly executed by the general correction control unit 131 is executed based on the correction amount determined by the determination unit 133 based on the position offset measured for a part of the initially manufactured stacked substrates 550 among the plurality of stacked substrates 550 manufactured. Therefore, for the common correction executed by the general correction control unit 131, the measurement for the individual substrates 510 and 520 or the stacked substrates 550 can be omitted, and the man-hours for executing the correction can be reduced. Moreover, the individual correction control unit 132 only needs to correct the difference between the correction executed by the general correction control unit 131 and the individual deformation of the substrates 510 and 520, so the load of the correction of the individual correction control unit 132 can be reduced.

[0158] In addition, the determination of the correction amount provided by the determination unit 133 to the general correction control unit 131 is not limited to once. After the determination unit 133 determines the correction amount once, the measurement by the general correction control unit 131 can also be continued, and the determination unit 133 periodically updates the correction amount. Thereby, the efficiency of the common correction executed by the general correction control unit 131 can be further improved. In addition, the correction conditions and their effects indicated by the general correction control unit 131 are stored in the control device 130. Thus, the more the operation of the manufacturing device 10 increases, the higher the accuracy of the correction by the general correction control unit 131 can be.

[0159] In addition, of course, the positional deviation generated by the stacked substrate 550 is not limited to the deviation caused by the magnification difference, and includes positional deviation components caused by many factors such as the quality of the wafers of the substrates 510 and 520, crystal anisotropy, initial deformation, thermal processes and pressure processes during the processing of the substrates 510 and 520, the shapes of the substrate holders 530 and 540 used in the stacking portion 13, the habits of the bonding device 300 and the thinning device 400 in the stacking portion 13, etc.

[0160] Therefore, the determination unit 133 is not limited to the measurement unit of the first measurement unit 14, and can also refer to manufacturing conditions in the processing unit 11, bonding conditions in the stacking unit 13, etc., to determine the equipment and correction amount to be corrected according to the instructions of the general correction control unit 131. Moreover, the determination unit 133 can also obtain information related to the deformation of the substrates 510 and 520 from an external database or the like, and also incorporate this information to determine the correction amount.

[0161] Moreover, when a plurality of processing units 11 and stacking units 13 are provided in the manufacturing apparatus 10 and the manufacturing apparatus 10 itself operates multiple times, by mutually referring to the measurement results of the first measurement unit 14 and the second measurement unit 14, or storing the measurement results in a common database, the accuracy and efficiency of determination can be improved. In this case, for example, even if the processing unit 11, the stacking unit 13, the control device 130, etc. of the manufacturing apparatus 10 or a plurality of manufacturing apparatuses 10 do not operate in the same place, as long as information is shared through a communication line, the determination units 133 of the plurality of manufacturing apparatuses 10 can share information with each other and improve the determination accuracy.

[0162] In addition, information related to the deformation components of the substrates 510 and 520 detected by the stacking unit 13 in association with the alignment of the substrates is fed back to the processing unit 11, whereby the tendencies of the individual film forming apparatuses 100 and circuit forming apparatuses 200 can also be corrected. Moreover, information related to the deformation generated in the individual processing units 11 is stored in a common database, whereby the determination unit 133 can determine correction conditions reflecting the tendencies of the processing units 11 in addition to the measurement results obtained from the first measurement unit 14 and the second measurement unit 12, etc.

[0163] Moreover, when a plurality of manufacturing apparatuses 10 are provided, or when a plurality of processing units 11 and stacking units 13 are provided in the manufacturing apparatus 10, the determination unit 133 can also determine the correction amount for the deformation components that commonly occur in the plurality of devices. In this case, only one determination unit 133 needs to be provided for the plurality of devices.

[0164] In addition, when manufacturing the stacked substrate 550 by bonding substrates in the stacking portion 13, in order to suppress the positional deviation between the substrates 510 and 520 in the stacked substrate 550, the deformations to be corrected include the following three.

[0165] (A) Deformation generated during the bonding process in the stacking portion 13.

[0166] (B) Deformation generated in the substrate 510 due to the processing before bonding.

[0167] (C) Deformation generated in the substrate 520 due to the processing before bonding.

[0168] Among the above deformations (A), (B), and (C), the substrate deformations (B) and (C) can be individually detected during the alignment process in the bonding device 300. In addition, the sum of the deformations (A), (B), and (C) can be detected by measuring the positional deviation between the substrates 510 and 520 in the manufactured stacked substrate 550. Therefore, the deformations (A), (B), and (C) can be individually detected.

[0169] When manufacturing a plurality of stacked substrates 550, the determination unit 133 of the manufacturing device detects the components that stably appear among the above deformations (A), (B), and (C), and determines the correction amount for correcting this component. By setting at least one of the processing parameters of the substrates 510 and 520 in the processing unit 11 and the initial setting values in the bonding of the substrates 510 and 520 by the stacking portion 13 in such a way that the determined correction amount can be used as a common correction amount for correction, the correction amount for each individual of the stacked substrate 550 in the bonding device 300 can be suppressed.

[0170] Here, when all of the above correction amounts are allocated to one substrate 510 and corrected in a processing step such as exposure in the exposure device, the positional deviation between the substrates 510 and 520 in the stacked substrate 550 formed by stacking is suppressed. However, the deformation (C) of the other substrate 520 that has not been corrected remains as it is, and a deformation corresponding to the size of the deformation (C) remains in the substrate 510. Therefore, when thinning the substrate 510 side of the manufactured stacked substrate 550 and further stacking other substrates, or when forming a certain structure on the surface of the stacked substrate 550, it is necessary to perform correction so that the other substrate and the structure generate deformations corresponding to the remaining deformation (C).

[0171] Alternatively, all of the above correction amounts can be allocated to the other substrate 520 and corrected in the processing step. In the fabricated stacked substrate 550, other substrates are stacked on the substrate 510, or some structure is formed on the surface of the stacked substrate 550. In this case, deformations (A) and (B) remain in the substrate 510. Therefore, when stacking other substrates on the substrate 510, it is also possible to make the deformation occur without correcting the other substrate on the condition that the sum of the deformations (A) and (B) generated in the other substrate is below the above threshold value and perform the bonding.

[0172] In addition, for example, when the deformation (C) in the substrate 520 is sufficiently small, the substrates 510 and 520 can be bonded by correcting the deformations (A) and (B) in the processing step with respect to the substrate 510 having a larger deformation (B). In this case, although the deformation (C) is not corrected, the deformation of the entire stacked substrate 550 coincides with the relatively small deformation (C). Therefore, when thinning the stacked substrate 550 fabricated in this way, it is preferable to thin the substrate 510 side corrected in the processing step.

[0173] Moreover, in the processing step, the deformation (B) of one substrate 510 and the deformation (C) of the other substrate 520 are corrected respectively, whereby the substrates 510 and 520 can be bonded without considering the position shift caused by the deformations (B) and (C) of the respective substrates 510 and 520, and a stacked substrate 550 with a small position shift can be fabricated. In this case, regarding the deformation (B) and (C) components generated in the film formation step and the like after the pattern is engraved in the processing steps of the substrates 510 and 520, they can also be individually corrected in units of individuals in the bonding device 300. In addition, the correction of the deformation (A) can be allocated to the correction in the processing step of either the substrate 510 or 520, or can be corrected in the bonding step.

[0174] In addition, in any case, the difference in the deformations generated in each of the substrates 510 and 520, that is, the difference based on the common correction amount, can also be individually corrected by the correction mechanism in the bonding device 300. In addition, the position shift of the substrates 510 and 520 in the fabricated stacked substrate 550 can be measured and reflected in the correction amount in the next processing of the substrates 510 and 520 and the fabrication of the stacked substrate 550.

[0175] When detecting a specific deformation component with a small difference, it is also possible to correct the pattern itself of the photomask or the like used in the circuit forming device 200 of the processing unit 11. Thereby, the load on each part of the manufacturing device 10 can be further reduced.

[0176] In addition, regarding the deformation components generated during the bonding process, they often depend on the characteristics of the manufacturing apparatus 10 itself. Therefore, the measurement results of the first measurement unit 14 can also be stored and referred to when manufacturing other types of laminated substrates 550. In addition, regarding the multiple laminated substrates 550, when there are extremely different values among the measurement results measured by the first measurement unit 14, the determination unit 133 can also remove the outliers to determine the correction items.

[0177] Moreover, the determination unit 133 can also determine the average value, median value, mode value, or minimum value of the position offset amounts measured by the first measurement unit 14 as the common correction amount for the correction performed by the general correction control unit 131. In this case, the general correction control unit, based on the respective different position offset amounts when manufacturing multiple laminated substrates 550 by bonding groups of multiple substrates 510 and 520, calculates the average value, median value, mode value, or minimum value as the correction amount to be corrected by the general correction control unit 131 by the determination unit 133. On the other hand, the individual correction control unit 132 performs individual corrections each time a laminated substrate 550 is manufactured, and is the difference between the correction amount commonly performed by the general correction control unit 131 and the position offset amount in each laminated substrate 550.

[0178] For example, when the correction amount is set to the average value, the value obtained by subtracting the average value from the position offset amount predicted to be generated between the substrates 510 and 530 when bonding two mutually bonded substrates 510 and 530 is used as the correction amount performed by the individual correction control unit 132. The difference from the average value varies depending on the group of the bonded substrates 510 and 530, and there are differences in the average value. Therefore, the correction amounts performed by the individual correction control unit 132 are different for each substrate 510 and 530. The same applies when the correction amount is set to the median value, mode value, or minimum value.

[0179] In addition, regarding the various types of position offset components obtained by measuring the position offsets of the substrates 510 and 520 in multiple laminated substrates 550, the difference between individuals is calculated, for example, as 3σ. It is possible to evaluate whether this position offset component is a common component in the multiple laminated substrates 550 based on whether this value is less than a pre-specified threshold value. Here, the component determined to be common is determined as the component to be commonly corrected by the general correction control unit 131.

[0180] The threshold value in this case can be determined, for example, based on whether the magnitude of the position offset that can occur in the laminated substrate 550 achieves a pre-specified target accuracy. In this way, the position offset components that are determined to be able to be commonly corrected for the multiple laminated substrates 550 can be corrected according to one correction condition, for example, in the processing unit 11 during the step of processing the substrates 510 and 520.

[0181] In addition, when calculating the correction amount, the positional offsets of the respective stacked substrates 550 can also be decomposed into a magnification component and a non-linear deformation component. In this case, the average value, median value, mode value, or minimum value of the magnification components of the respective stacked substrates 550 can be used as a common correction amount, and the difference between the magnification resulting from the joining of the substrate corrected using this common correction amount and other substrates and the common correction amount can be used as an individual correction amount. On the other hand, regarding the non-linear component, the non-linear component can also be obtained for each of a plurality of common positions of the respective stacked substrates 550, and the average value, median value, mode value, or minimum value of the non-linear deformation components at each position can be used as the common correction amount for each position, and the difference between the non-linear deformation resulting from the joining of the substrate corrected using this common correction amount and other substrates and the common correction amount can be used as an individual correction amount.

[0182] As described with reference to Figure 6 As described above, in the joining device 300 of the stacking portion 13, the alignment marks 518 and 528 are detected in units of the substrates 510 and 520, and the deformation or distortion of the substrates 510 and 520 is detected. Therefore, in the stacking portion 13, the individual positional offset components generated for each substrate 510 and 520 can be corrected. Therefore, in the processing step of the processing portion 11, the positional offset components that are commonly generated in the plurality of stacked substrates 550 are corrected, whereby the correction conditions for correction in the stacking portion 13 can be dedicated to the positional offsets individually generated in each of the substrates 510 and 520, and more efficient correction can be achieved.

[0183] In addition, the positional offset components that are generated in the stacking portion 13 and thus have not yet been generated in the processing portion 11 are corrected in advance in the processing portion 11, whereby the correction amount that can ultimately be corrected by the entire manufacturing device 10 becomes the value obtained by summing the range that can be corrected in the processing portion 11 and the range that can be corrected in the stacking portion 13. Therefore, the correction amount that can be corrected by the entire manufacturing device 10 becomes larger. From this perspective, it is also possible to perform the common correction executed by the general correction control unit 131 in the stacking portion 13.

[0184] In addition, in the manufacturing device 10, at least a part of the positional offset generated in the stacking portion 13 can also be corrected in the processing portion 11. Therefore, if the positional offset of the substrate after processing in the processing portion 11 with respect to the design value is compared with the case where only the positional offset generated in the processing portion 11 is corrected, it often temporarily becomes larger.

[0185] Furthermore, the general correction control unit 131 can also distribute the common correction amount provided by the determination unit 133 to a plurality of devices that perform a plurality of processes in the manufacturing apparatus 10 for execution. For example, the initial deformations in the substrates 510 and 520 can be divided into predictable components such as the average value, median value, mode value, and minimum value, and the difference, that is, the unpredictable minute individual difference amount, which is the deviation from the average value, median value, mode value, or minimum value. The former is corrected by the circuit forming apparatus 200, and the latter is corrected by the bonding apparatus 300.

[0186] In addition, when the correction amount is determined by the determination unit 133, if a part of the processing of the substrates 510 and 520 has been completed, the substrates 510 and 520 cannot be corrected in the processing unit 11. Therefore, in this case, even for the deformation component suitable for correction using the processing unit 11, it is often determined that correction is performed by other devices such as the stacking unit 13.

[0187] Furthermore, a substrate holder 540 having a convex adsorption surface 542 can be used in combination, referring to Figures 21 - 23 the actuator described later, for example, additional correction equipment such as a workbench apparatus having a small jack or a small balloon. In this case, for example, correction using the common correction amount such as the average value, median value, mode value, and minimum value is performed in the substrate holder 540, and the difference between the correction amount and the actual position offset amount to be corrected is corrected using the correction equipment. That is, in this case, the selection of the substrate holder 540 becomes the control object of the general correction control unit 131, and the individual correction control unit 132 controls the correction equipment.

[0188] Figure 21 It is a schematic cross-sectional view of a correction device 601 that can be used when individually correcting the substrate 520 in the stacking unit 13. The correction device 601 is assembled on the lower workbench 332 of the bonding apparatus 300 and corrects one of the substrates 520 carried into the bonding apparatus 300.

[0189] The correction device 601 includes a base 611, a plurality of actuators 612, and an adsorption unit 613. The base 611 supports the adsorption unit 613 via the actuators 612. The adsorption unit 613 has an adsorption mechanism such as a vacuum chuck or an electrostatic chuck and forms the upper surface of the lower workbench 332. The adsorption unit 613 adsorbs and holds the carried-in substrate holder 540.

[0190] A plurality of actuators 612 are arranged below the adsorption portion 613 along the lower surface of the adsorption portion 613. In addition, under the control of the control device 130, the plurality of actuators 612 are supplied with operating fluid from the outside through the pump 615 and the valve 616 and are thus individually driven. As a result, the plurality of actuators 612 expand and contract with different expansion and contraction amounts in the thickness direction of the lower workbench 332, that is, in the overlapping direction of the substrates 510 and 520, so as to raise or lower the area where the adsorption portion 613 is joined.

[0191] In addition, the plurality of actuators 612 are respectively joined to the adsorption portion 613 via linkages. The central portion of the adsorption portion 613 is joined to the base portion 611 through a support column 614. When the actuator 612 operates in the correction device 601, the surface of the adsorption portion 613 is displaced in the thickness direction in each area where the actuator 612 is joined.

[0192] Figure 22 It is a schematic plan view of the correction device 601 and is a diagram showing the layout of the actuators 612 in the correction device 601. In the correction device 601, the actuators 612 are arranged radially around the support column 614. In addition, the arrangement of the actuators 612 may also be in a concentric circle shape centered on the support column 614. The arrangement of the actuators 612 is not limited to the illustrated case. For example, it may also be arranged in a grid shape, a spiral shape, etc. Thus, the substrate 520 can be corrected by changing the shape in a concentric circle shape, a radial shape, a spiral shape, etc.

[0193] Figure 23 It is a diagram for explaining the operation of the correction device 601. As shown in the figure, the valve 616 can be individually opened and closed to thereby expand and contract the actuator 612 and change the shape of the adsorption portion 613. Therefore, if the adsorption portion 613 adsorbs the substrate holder 540 and the substrate holder 540 holds the substrate 520, the shape of the substrate holder 540 and the substrate 520 can be changed and bent by changing the shape of the adsorption portion 613.

[0194] As Figure 22 shown, it can be regarded that the actuators 612 are arranged in a concentric circle shape, that is, along the circumferential direction of the lower workbench 332. Therefore, as Figure 23 shown by the dashed line M in, taking each circle of actuators 612 as a group and increasing the driving amount as it gets closer to the periphery, the center can be raised on the surface of the adsorption portion 613, and it can be changed into a spherical shape, a parabolic shape, a cylindrical shape, etc.

[0195] Thus, similar to the case where the substrate 520 is held by the curved substrate holder 540, the substrate 520 can be bent with its shape changed to mimic a spherical surface, a parabolic surface, etc. Therefore, in the correction device 601, as compared with the central portion B in the thickness direction of the substrate 520 indicated by the one-dot chain line in the figure, the shape of the upper surface of the substrate 520 in the figure changes in such a way that the surface of the substrate 520 expands in the plane direction.

[0196] In addition, on the lower surface of the substrate 520 in the figure, the shape changes in such a way that the surface of the substrate 520 shrinks in the plane direction. Moreover, by individually controlling the expansion and contraction amounts of the plurality of actuators 612, the shape of the substrate 520 can be changed and bent into a non-linear shape including a plurality of uneven portions in addition to other shapes such as a cylindrical surface.

[0197] In Figure 22 the example, the adsorption portion 613 has a shape with a central protrusion. However, the operation amount of the actuator 612 can also be increased at the peripheral portion of the adsorption portion 613 so that the central portion is recessed with respect to the peripheral portion of the adsorption portion 613, thereby reducing the magnification of the circuit region 516 in the surface of the substrate 520.

[0198] In addition, in the above example, although the correction device 601 is assembled on the lower workbench 332 of the bonding device 300, the correction device 601 can also be assembled on the upper workbench 322 to correct the substrate 510 on the upper workbench 322. Furthermore, the correction device 601 can also be assembled on both the upper workbench 322 and the lower workbench 332. Moreover, the upper workbench 322 and the lower workbench 332 can be used to share the correction. The correction of the magnification of the substrates 510 and 520 is not limited to the above method, and other correction methods such as thermal expansion or thermal contraction caused by temperature adjustment can also be further introduced. In this case, the temperature can also be adjusted by a device external to the bonding device 300.

[0199] Moreover, when the temperature-adjusted substrates 510 and 520 are conveyed to the bonding device 300, the conveying path can also be set to a heat-insulated environment. In addition, the temperature distribution of the hands of the substrates 510 and 530 that hold the conveying portions for conveying the substrates 510 and 530 can be made the same as the temperature distribution of the temperature-adjusted substrates 510 and 530. Moreover, the temperature during temperature adjustment can also be set in consideration of the heat released from the substrates 510 and 530 during conveyance. In addition, the temperature distribution of the upper workbench 322 and the lower workbench 332 into which the substrates 510 and 530 are carried can be made the same as the temperature distribution of the temperature-adjusted substrates 510 and 530.

[0200] In this way, the correction device 601 controls the actuator 612 to change the shape of the adsorption surface, thereby enabling immediate response to various corrections. Therefore, it can be better used in the case of correcting multiple substrates 520 under individual conditions. In addition, by individually operating the actuator 612 of the correction device 601 through the control device 130, the non-linear deformation in the substrate 520 can also be corrected.

[0201] In addition, when bonding with the other substrate 510 in a state where one substrate 520 is deformed, according to the stress generated in the release-side substrate 510 where the holding by the substrate holder 530 is released during bonding, the fixed-side substrate 520 where the holding is not released also generates stress due to the deformation. Therefore, the stress difference between the substrates in the state of the stacked substrate 550 after bonding is small.

[0202] On the other hand, for the stacked substrate 550 obtained by bonding substrates whose magnification or non-linear deformation is corrected by pattern formation using the circuit forming device 200, although the stress of the deformation generated in the release-side substrate 510 during bonding is retained as it is, the fixed-side substrate 520 does not generate deformation for deformation correction, so no stress is generated due to this deformation. Therefore, if the holding of the substrate 520 by the substrate holder 540 is released after bonding, the stress is distributed to both substrates. Therefore, due to the stress received from the substrate 510, the substrate 520 shrinks and deforms together with the substrate 510. In this state, the positions of the patterns formed on the substrates 510 and 520 deviate significantly from the designed positions.

[0203] Then, by thinning the substrate 510, the stress is concentrated in the substrate 510 again. Therefore, the substrates 510 and 520 expand and deform respectively, and the positions of the patterns on the substrates 510 and 520 are approximately the same as the designed positions. Thus, when performing exposure of the rewiring layer after thinning the substrate 510 and stacking the substrates after the third substrate, the subsequent processes can be carried out with the designed position as the target position. Therefore, when pre-judging the case of thinning the stacked substrate 550 after bonding, it is preferably to correct the deformation generated in the substrate on the thinned side in the processing unit 11.

[0204] In addition, in the above example, it is assumed that the lower workbench 332 is deformed by the actuator 612 to deform at least one of the substrates 510 and 520 for correction. However, for example, as Figure 9As shown, it is also possible to prepare a substrate holder 540 in which the adsorption surface 542 is a curved surface, and a plurality of substrate holders 540 having different curvatures from each other. The substrate 520 is held by the substrate holder 540 having a curvature corresponding to the correction condition for the substrate 520, so that the substrate 520 is deformed, that is, the substrate 520 is corrected. When at least one of the two substrates 510 and 520 is deformed to make the positional deviation between the substrates less than or equal to the threshold value, the amount of deformation becomes the correction amount.

[0205] As described above, although the present invention has been described using the embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It is obvious to those skilled in the art that various changes or improvements can be made to the above embodiments. According to the claims, embodiments with such changes or improvements can also be included in the technical scope of the present invention.

[0206] It should be noted that the execution order of each process such as the actions, sequences, steps, and stages in the devices, systems, programs, and methods shown in the claims, the specification, and the drawings is not specifically indicated as "earlier", "before", etc. In addition, as long as the output of the previous process is not used in the subsequent process, it can be implemented in any order. Regarding the action flow in the claims, the specification, and the drawings, for convenience, even if "first," "next," etc. are used for explanation, it does not mean that it must be implemented in that order.

[0207] Description of reference numerals

[0208] 10… Manufacturing apparatus, 11… Processing section, 12… Second measurement section, 13… Laminating section, 14… Measurement section, 100… Film forming apparatus, 110… Chamber, 112… Supply hole, 114… Exhaust hole, 122, 124… High-frequency electrodes, 130… Control device, 131… General correction control section, 132… Individual correction control section, 133… Decision section, 134… Judgment section, 200… Circuit forming apparatus, 210… Light source, 220… Mask, 230… Reduction optical system, 240… Moving stage, 300… Bonding apparatus, 310… Frame, 312… Bottom plate, 316… Top plate, 322… Upper stage, 324, 334… Microscopes, 326, 336… Activation devices, 331… X-direction drive section, 332… Lower stage, 333… Y-direction drive section, 338… Lifting drive section, 339… Rotation drive section, 400… Thinning apparatus, 510, 520… Substrates, 512, 522… Scratch lines, 514, 524… Notches, 516, 526… Circuit regions, 518, 528… Alignment marks, 530, 540… Substrate holders, 532, 542… Adsorption surfaces, 550… Laminated substrate, 601… Correction apparatus, 611… Base, 612… Actuator, 613… Adsorption section, 614… Support column, 615… Pump, 616… Valve.

Claims

1. A manufacturing apparatus comprising a control device that transmits first information based on a first measurement result of a plurality of first stacked bodies formed by stacking at least two substrates by a stacking device to a processing device, and transmits second information based on the first measurement result and a second measurement result after the processing device processes a substrate for forming a pattern to the stacking device; The processing device processes a first substrate for forming a pattern based on the first information; The stacking device includes: a first holder for holding the first substrate; and a second holder for holding a second substrate; The stacking device performs the following operations: Measure the positions of structures provided on the first substrate as alignment indicators, and the positions of structures provided on the second substrate as alignment indicators; Move one of the first holder holding the first substrate and the second holder holding the second substrate relative to the other so that the positional deviation between the position of the structure of the first substrate obtained by measurement and the position of the structure of the second substrate obtained by measurement is below a threshold; Deform at least one of the first substrate and the second substrate based on the second information; After performing the measurement, the movement, and the deformation, form a second stacked body by bonding the first substrate and the second substrate.

2. A manufacturing apparatus comprising a control device that transmits first information based on a first measurement result of a plurality of first stacked bodies formed by stacking at least two substrates by a stacking device and a second measurement result after the processing device processes a substrate for forming a pattern to the processing device, and transmits second information based on the first measurement result and the second measurement result to the stacking device; The processing device processes a first substrate for forming a pattern based on the first information; The stacking device includes: a first holder for holding the first substrate; and a second holder for holding a second substrate; The stacking device performs the following operations: Measure the positions of structures provided on the first substrate as alignment indicators, and the positions of structures provided on the second substrate as alignment indicators; Move one of the first holder holding the first substrate and the second holder holding the second substrate relative to the other so that the positional deviation between the position of the structure of the first substrate obtained by measurement and the position of the structure of the second substrate obtained by measurement is below a threshold; Deform at least one of the first substrate and the second substrate based on the second information; After performing the measurement, the movement, and the deformation, form a second stacked body by bonding the first substrate and the second substrate.

3. The manufacturing apparatus according to claim 1 or 2, wherein, The processing device includes an exposure device that exposes the first substrate corresponding to the pattern based on the exposure conditions determined by the first information.

4. The manufacturing apparatus according to claim 3, wherein, the exposure apparatus exposes the first substrate based on the first information, such that at least one of a position of the pattern formed on the first substrate, a magnification of the pattern, and a shape of the pattern is changed.

5. The manufacturing apparatus according to any one of claims 1 to 4, wherein, the processing apparatus processes a plurality of substrates including the first substrate based on common processing conditions determined by the first information; the lamination apparatus applies to a plurality of laminates including the second laminate based on common lamination conditions determined by the second information, and applies to each of the plurality of laminates based on individual lamination conditions determined by the second information, to form the plurality of laminates.

6. The manufacturing apparatus according to claim 5, wherein, to deform a substrate held by one of the first holder or the second holder of the lamination apparatus, the one holder includes a plurality of actuators; the first holder selects from a plurality of holders having different curvatures based on the common lamination conditions; the plurality of actuators deform the one holder based on the individual lamination conditions.

7. The manufacturing apparatus according to any one of claims 1 to 6, wherein, the first measurement results of the plurality of first laminates include: a position deviation between a structure provided on one of the two substrates as an alignment index and a structure provided on the other of the two substrates as an alignment index in each of the plurality of first laminates; the first information includes: a correction amount determined based on a minimum value or a median value of the magnitudes of the position deviations of the plurality of first laminates; the processing apparatus processes a plurality of substrates including the first substrate for forming a pattern based on the correction amount.

8. The manufacturing apparatus according to any one of claims 1 to 6, wherein, the first measurement results of the plurality of first laminates include: a position deviation between a structure provided on one of the two substrates as an alignment index and a structure provided on the other of the two substrates as an alignment index in each of the plurality of first laminates; when 3σ (σ is a standard deviation) of the magnitudes of the position deviations of the plurality of first laminates is lower than a threshold value, the processing apparatus processes a plurality of substrates including the first substrate for forming a pattern based on the first information.

9. The manufacturing apparatus according to any one of claims 1 to 8, wherein, the second laminate includes: the first substrate processed by the processing apparatus according to the first information, and the second substrate not processed according to the first information; in the second laminate, the first substrate is a thinned substrate.

10. The manufacturing apparatus according to any one of claims 1 to 9, wherein, the structures of the first substrate and the second substrate are alignment marks.

11. A manufacturing method, comprising: Measure a plurality of first stacked bodies formed by stacking at least two substrates by a stacking device, and obtain a first measurement result; Measure a substrate that has been processed by a processing device for forming a pattern, and obtain a second measurement result; Transmit first information based on the first measurement result to the processing device; Transmit second information based on the first measurement result and the second measurement result to the stacking device; The processing device performs a process for forming a pattern on a first substrate based on the first information; The stacking device includes: a first holder for holding the first substrate; and a second holder for holding a second substrate; The stacking device performs the following operations: Measure the position of a structure provided on the first substrate as an alignment index, and the position of a structure provided on the second substrate as an alignment index; Move one of the first holder holding the first substrate and the second holder holding the second substrate relative to the other, so that the position deviation between the position of the structure of the first substrate obtained by measurement and the position of the structure of the second substrate obtained by measurement is below a threshold value; Deform at least one of the first substrate and the second substrate based on the second information; After performing the measurement, the movement, and the deformation, form a second stacked body by bonding the first substrate and the second substrate.

12. A manufacturing method, including: Measure a plurality of first stacked bodies formed by stacking at least two substrates by a stacking device, and obtain a first measurement result; Measure a substrate that has been processed by a processing device for forming a pattern, and obtain a second measurement result; Transmit first information based on the first measurement result and the second measurement result to the processing device; Transmit second information based on the first measurement result and the second measurement result to the stacking device; The processing device performs a process for forming a pattern on a first substrate based on the first information; The stacking device includes: a first holder for holding the first substrate; and a second holder for holding a second substrate; The stacking device performs the following operations: Measure the position of a structure provided on the first substrate as an alignment index, and the position of a structure provided on the second substrate as an alignment index; Move one of the first holder holding the first substrate and the second holder holding the second substrate relative to the other, so that the position deviation between the position of the structure of the first substrate obtained by measurement and the position of the structure of the second substrate obtained by measurement is below a threshold value; Deform at least one of the first substrate and the second substrate based on the second information; After performing the measurement, the movement, and the deformation, form a second stacked body by bonding the first substrate and the second substrate.

13. The manufacturing method according to claim 11 or 12, wherein, The processing device includes an exposure device, and the exposure device performs exposure corresponding to the pattern on the first substrate based on the exposure conditions determined by the first information; The exposure device performs exposure on the first substrate based on the first information, so that at least one of the position, magnification, and shape of the pattern formed on the first substrate is changed.

14. The manufacturing method according to any one of claims 11 to 13, wherein, The processing device processes a plurality of substrates including the first substrate based on the common processing conditions determined by the first information; The laminating device is applicable to a plurality of laminates including the second laminate based on the common lamination conditions determined by the second information, and is respectively applicable to each of the plurality of laminates based on the individual lamination conditions determined by the second information to form the plurality of laminates.

15. The manufacturing method according to claim 14, wherein, To deform the substrate held by one of the first holder or the second holder of the laminating device, the one holder includes a plurality of actuators; The first holder selects from a plurality of holders with different curvatures based on the common lamination conditions; The plurality of actuators deform the one holder based on the individual lamination conditions.

16. The manufacturing method according to any one of claims 11 to 15, wherein, The first measurement results of the plurality of first laminates include: the position deviation between the structure provided as an alignment index on one of the two substrates in each of the plurality of first laminates and the structure provided as an alignment index on the other of the two substrates; The first information includes: a correction amount determined based on the minimum value or the intermediate value of the magnitudes of the position deviations of the plurality of first laminates; The processing device processes a plurality of substrates including the first substrate for forming a pattern based on the correction amount.

17. The manufacturing method according to any one of claims 11 to 15, wherein, The first measurement results of the plurality of first laminates include: the position deviation between the structure provided as an alignment index on one of the two substrates in each of the plurality of first laminates and the structure provided as an alignment index on the other of the two substrates; When 3σ (σ is the standard deviation) of the magnitudes of the position deviations of the plurality of first laminates is lower than a threshold value, the processing device processes a plurality of substrates including the first substrate for forming a pattern based on the first information.

18. The manufacturing method according to any one of claims 11 to 17, wherein, The second laminate includes: the first substrate processed by the processing device according to the first information, and the second substrate not processed according to the first information; In the second laminate, the first substrate is a thinned substrate.

19. The manufacturing method according to any one of claims 11 to 18, Among them, The structures of the first substrate and the second substrate are alignment marks respectively.

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