Substrate processing apparatus

Abstract

The present invention provides a substrate processing apparatus capable of etching a film having a relatively high hardness formed on a peripheral edge portion of a substrate at a relatively high etching rate without using plasma. The substrate processing apparatus includes: a peripheral edge heating unit configured to be capable of heating a peripheral edge portion of a substrate; an irradiation unit disposed above the upper surface of the substrate and configured so as to be able to irradiate energy rays toward the upper surface of the substrate; and a supply unit configured so as to be able to supply an oxygen-containing gas or an ozone gas to the peripheral edge of the substrate. The peripheral heating part extends in a substantially arc shape or a substantially annular shape along the peripheral part of the substrate. The irradiation unit includes: a plurality of light sources extending in a predetermined first direction parallel to the upper surface of the substrate and arranged in a second direction parallel to the upper surface of the substrate and orthogonal to the first direction; a housing configured so as to be able to accommodate the plurality of light sources therein; and a window part which is provided on the bottom wall of the housing and is configured so as to be able to transmit the energy rays.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus. Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus that performs plasma generation by supplying a processing gas to a chamber for housing a substrate, and thereby removes a layer deposited on the peripheral portion of the substrate using the plasma.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2011-514679 Summary of the Invention

[0006] Technical Problem to be Solved by the Invention

[0007] The present invention describes a substrate processing apparatus that can etch a relatively hard film formed on the peripheral portion of a substrate at a relatively high etching rate without using plasma.

[0008] Technical Solution for Solving the Technical Problem

[0009] An example of the substrate processing apparatus includes: a peripheral heating unit configured to be able to heat the peripheral portion of the substrate; an irradiation unit disposed above the upper surface of the substrate and configured to be able to irradiate the upper surface of the substrate with an energy line for etching having a wavelength of 185 nm or less; and a supply unit configured to be able to supply an oxygen-containing gas or an ozone gas to the peripheral portion of the substrate. The peripheral heating unit extends substantially in an arc shape or a substantially circular shape along the peripheral portion of the substrate. The irradiation unit includes: a plurality of light sources extending along a predetermined first direction parallel to the upper surface of the substrate and arranged along a second direction parallel to the upper surface of the substrate and orthogonal to the first direction; a housing configured to be able to house the plurality of light sources therein; and a window portion provided on the bottom wall of the housing and configured to be able to transmit the energy line.

[0010] Advantages of the Invention

[0011] According to the substrate processing apparatus of the present invention, it is possible to etch a relatively hard film formed on the peripheral portion of a substrate at a relatively high etching rate without using plasma. Brief Description of the Drawings

[0012] Figure 1 is a perspective view showing a substrate processing system.

[0013] Figure 2 is Figure 1 a cross-sectional view taken along line II-II of

[0014] Figure 3 is a cross-sectional view schematically showing the structure of an etching unit.

[0015] Figure 4 is a block diagram showing an example of the main part of a substrate processing system.

[0016] Figure 5 is a schematic diagram showing an example of the hardware structure of a controller.

[0017] Figure 6 is a partial cross-sectional view schematically showing the structure of another example of an etching unit.

[0018] Figure 7 is a partial cross-sectional view schematically showing the structure of another example of an etching unit.

[0019] Figure 8 (a) of is a graph showing the experimental results of Experimental Example 1, Figure 8 (b) of is a graph showing the experimental results of Experimental Example 2.

[0020] Figure 9 (a) of is a graph showing the experimental results of Experimental Example 3, Figure 9 (b) of is a graph showing the experimental results of Experimental Example 4.

[0021] Figure 10 (a) of is a graph showing the relationship between the interval and the etching rate when the substrate is heated at 400 °C in Experimental Examples 1 to 3, Figure 10 (b) of is a graph showing the relationship between the irradiation time of ultraviolet rays and the etching amount when the substrate is heated at 300 °C with the interval set to 1.2 mm in Experimental Examples 1 to 3.

[0022] Figure 11 (a) of is a graph showing the experimental results of Experimental Example 5, Figure 11 (b) of is a graph showing the experimental results of Experimental Examples 6 and 7. Detailed implementation

[0023] In the following description, the same reference numerals are used for the same elements or elements having the same function, and repeated descriptions are omitted. In addition, in this specification, when referring to the top, bottom, right, and left of the figure, the orientation of the reference numerals in the figure is used as a reference.

[0024] [Structure of substrate processing system]

[0025] First, refer to Figure 1 and Figure 2, to describe the structure of the substrate processing system 1 (substrate processing apparatus). The substrate processing system 1 is configured to be able to form a coating film on the upper surface Wu of the substrate W (refer to Figure 3 ) by coating a liquid. The substrate processing system 1 is configured to be able to cure the coating film by heat treatment to form a protective film (not shown) on the upper surface Wu of the substrate W. The substrate processing system 1 is configured to be able to remove the protective film at the peripheral portion Wp of the substrate W (refer to Figure 3 ) by etching processing.

[0026] The substrate W can be in the shape of a circular plate or in the shape of a plate other than a circle such as a polygon. The substrate W can also have a cut portion where a part is cut off. The cut portion can be, for example, a notch (a groove such as a U-shape or a V-shape), or a linear portion (so-called orientation plane) extending linearly. The substrate W can be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, and various other substrates. The diameter of the substrate W can be, for example, about 200 mm to 450 mm.

[0027] The protective film can be a carbon-containing film. The carbon-containing film can be, for example, a diamond film, an amorphous carbon film, a spin-on carbon (SOC) film containing oxygen, etc. That is, the carbon-containing film can contain an element whose atom is a monomer and is a gas, or an element that is bonded to oxygen and becomes a gas under normal pressure as an element other than carbon. In addition, in this specification, the "surface of the substrate W" refers to the outermost surface of the substrate W. For example, in the case where a protective film is formed on the substrate W, the surface of the protective film can be the "surface of the substrate W".

[0028] The substrate processing system 1 includes a loading / unloading station 2, a processing station 3, and a controller Ctr (control unit). The loading / unloading station 2 and the processing station 3 can be arranged in a row in the horizontal direction, for example.

[0029] The loading / unloading station 2 performs the introduction of the substrate W into the substrate processing system 1 and the export of the substrate W from the substrate processing system 1. The loading / unloading station 2 can support, for example, a plurality of carriers 4 for the substrate W. The carrier 4 houses at least one substrate W in a sealed state. As Figure 2 shown, the loading / unloading station 2 is internally provided with a transfer arm A1. The transfer arm A1 takes out the substrate W from the carrier 4 and delivers it to the shelf unit 5 of the processing station 3, receives the substrate W from the shelf unit 5 of the processing station 3, and returns it to the carrier 4.

[0030] The processing station 3 includes at least one liquid processing unit U1, at least one heat treatment unit U2, at least one etching unit U3 (substrate processing device), and a transfer arm A2 for transferring the substrate W to these units. The transfer arm A2 is configured to be able to take out the substrate W from the shelf unit 5 and deliver it to each unit, and also to receive the substrate W from each unit and return it to the shelf unit 5.

[0031] The liquid processing unit U1 is configured to be able to perform the following processing: supply a processing liquid for forming a protective film to the upper surface Wu of the substrate W to form a coating film on the upper surface Wu of the substrate W. The heat treatment unit U2 is configured to be able to perform the following processing: cure the coating film formed in the liquid processing unit U1 by heat treatment to form a protective film on the upper surface Wu of the substrate W. The etching unit U3 performs etching to remove the protective film at the peripheral portion Wp of the substrate W. Details of the etching unit U3 will be described later.

[0032] The controller Ctr is configured to be able to control part or the whole of the substrate processing system 1. Details of the controller Ctr will be described later.

[0033] [Structure of the etching unit]

[0034] Next, with reference to Figure 3 , the structure of the etching unit U3 will be described. The etching unit U3 includes a rotation holding unit 10, a support unit 20, a lifting unit 30, an irradiation unit 40, gas supply units 50 and 60, a peripheral heating unit 70, and a reflection member 80.

[0035] The rotation holding unit 10 has a holding unit 11 and a rotation driving unit 12. The holding unit 11 is configured to be able to hold the horizontally arranged substrate W from below. The holding unit 11 includes a central heating unit 13. The central heating unit 13 is configured to be able to operate based on an operation signal from the controller Ctr, and mainly heats the central portion Wc of the substrate W held by the holding unit 11. The central heating unit 13 can be configured, for example, to be able to heat the central portion Wc of the substrate W to 400°C or less, or to be able to heat the central portion Wc of the substrate W to about 50°C to 400°C.

[0036] Although not shown, the central heating unit 13 may also include a plurality of heating regions arranged in the radial direction of the substrate W. The plurality of heating regions can be arranged concentrically, for example, from the center of the substrate W toward the outer peripheral side. The plurality of heating regions may also be respectively built-in heat sources (such as heaters). In this case, different temperatures can be set for each heating region.

[0037] The rotation drive unit 12 is configured to be able to operate based on an operation signal from the controller Ctr, and rotate the substrate W held by the holding unit 11. For example, the rotation drive unit 12 may also use an electric motor or the like as a power source to rotate the holding unit 11 about a vertical axis passing through the center of the substrate W.

[0038] The support unit 20 is disposed below the holding unit 11. The support unit 20 includes a base portion 21 and a plurality of support pins 22 protruding upward from the base portion 21. The front end portions of the support pins 22 can be inserted through through-holes (not shown) provided in the holding unit 11.

[0039] The lifting unit 30 is configured to be able to operate based on an operation signal from the controller Ctr, and lift and lower the rotation holding unit 10. The substrate W held by the rotation holding unit 10 is displaced up and down as the rotation holding unit 10 is lifted and lowered by the lifting unit 30. Thereby, the distance between the upper surface Wu of the substrate W and the irradiation unit 40 can be changed. That is, when the lifting unit 30 raises the rotation holding unit 10, the interval between the upper surface Wu of the substrate W and the irradiation unit 40 becomes smaller, and when the lifting unit 30 lowers the rotation holding unit 10, the interval between the upper surface Wu of the substrate W and the irradiation unit 40 becomes larger. The lifting unit 30 may be, for example, an electric motor, a cylinder, or the like.

[0040] The lifting unit 30 may also be configured to be able to lift and lower the support unit 20. That is, the front end portions of the support pins 22 may also be configured to be able to protrude from and retract into the upper surface of the holding unit 11 by the lifting unit 30. When the lifting unit 30 raises the support unit 20, the front end portions of the support pins 22 protrude upward from the upper surface of the holding unit 11, and when the lifting unit 30 lowers the support unit 20, the front end portions of the support pins 22 descend downward from the upper surface of the holding unit 11. In a state where the front end portions of the support pins 22 protrude upward from the upper surface of the holding unit 11, when the substrate W is fed into and out of the etching unit U3, the substrate W is supported by the front end portions of the support pins 22.

[0041] The irradiation unit 40 is disposed above the rotation holding unit 10, the support unit 20, and the lifting unit 30. That is, in a state where the substrate W is held by the rotation holding unit 10, the irradiation unit 40 is located above the upper surface Wu of the substrate W. The irradiation unit 40 includes a housing 41, a plurality of light sources 42, a window portion 43, and a plurality of reflection members 44.

[0042] The housing 41 is configured to be able to accommodate a plurality of light sources 42 and a plurality of reflection members 44 therein. A through-hole 41a is provided in the bottom wall of the housing 41. When the irradiation unit 40 is located above the substrate W, when viewed from above, the through-hole 41a overlaps the entire substrate W. The through-hole 41a may have a circular shape when viewed from above.

[0043] A plurality of light sources 42 are configured to be able to operate based on an operation signal from a controller Ctr, and irradiate an energy line for etching having a wavelength of 185 nm or less onto the upper surface Wu of a substrate W. The plurality of light sources 42 may also be, for example, straight tube-type light sources. The plurality of light sources 42 may also extend along a direction X (first direction) parallel to the upper surface Wu of the substrate W. The plurality of light sources 42 may also be arranged at a predetermined interval along a direction Y (second direction) parallel to the upper surface Wu of the substrate W and orthogonal to the direction X. In this case, the energy lines from the plurality of light sources 42 do not irradiate the upper surface Wu of the substrate W uniformly. Therefore, the substrate W may be rotated relative to the plurality of light sources 42 by using a rotation holding unit 10, thereby making the deviation of the irradiation of the energy lines on the upper surface Wu of the substrate W uniform.

[0044] The energy line may be, for example, ultraviolet light. The main wavelength of the energy line may be 185 nm or less, 172 nm or less, 165 nm or less, 150 nm or less, 120 nm or less, 100 nm or less. When the main wavelength of the energy line is 172 nm, the light source 42 may be a xenon excimer UV lamp. When the main wavelength of the energy line is 146 nm, the light source 42 may also be a krypton discharge lamp. When the main wavelength of the energy line is 126 nm, the light source 42 may also be an argon discharge lamp.

[0045] The window portion 43 is configured to be able to transmit the energy line irradiated from the light source 42. The material of the window portion 43 may be appropriately selected according to the wavelength of the energy line irradiated from the light source 42. For example, when the main wavelength of the energy line is 165 nm or more, quartz glass may be selected as the material of the window portion 43. When the main wavelength of the energy line is 150 nm or more, calcium fluoride may be selected as the material of the window portion 43. When the main wavelength of the energy line is 120 nm or more, magnesium fluoride may be selected as the material of the window portion 43.

[0046] The window portion 43 is installed in the through hole 41a of the housing 41 so as to seal the through hole 41a. Therefore, the airtightness inside the housing 41 is maintained. In a state where the irradiation unit 40 is located above the substrate W, when viewed from above, the window portion 43 includes a central portion 43a (first part) opposite to the central portion Wc of the substrate W and a peripheral portion 43b (second part) opposite to the peripheral portion Wp of the substrate W. The central portion 43a may be circular in shape when viewed from above. The peripheral portion 43b may be in a ring shape surrounding the periphery of the central portion 43a. The outer peripheral edge of the peripheral portion 43b may be located outside the outer peripheral edge of the substrate W when viewed from above. The outer peripheral edge of the peripheral portion 43b may be located about 2 mm to 5 mm outside the outer peripheral edge of the substrate W in the radial direction of the substrate W when viewed from above.

[0047] As Figure 3As illustrated, the central portion 43a may also be recessed upward with respect to the peripheral portion 43b. That is, the peripheral portion 43b may be located at a position lower than the central portion 43a such that the linear distance (spacing distance) between the peripheral portion 43b and the upper surface Wu of the substrate W is less than the linear distance (spacing distance) between the central portion 43a and the upper surface Wu of the substrate W. The linear distance between the peripheral portion 43b and the upper surface Wu of the substrate W may be, for example, about 0.5 mm to 3 mm. The linear distance between the central portion 43a and the upper surface Wu of the substrate W may be, for example, about 10 mm to 30 mm.

[0048] In addition, in the case where the wavelength of the energy line irradiated from the light source 42 is ultraviolet light of 185 nm or less, in the space between the central portion 43a and the upper surface Wu of the substrate W, the ultraviolet light is absorbed by oxygen molecules and changed into ozone. When the linear distance between the central portion 43a and the upper surface Wu of the substrate W is 10 mm or more and the oxygen concentration in this space is 20% based on the oxygen-containing gas supplied by the gas supply unit 60, most of the ultraviolet light is absorbed by oxygen molecules and hardly reaches the upper surface Wu of the substrate W. Therefore, the portion other than the peripheral portion Wp of the substrate W is not easily affected by the ultraviolet light. Further, when the linear distance between the central portion 43a and the upper surface Wu of the substrate W is 30 mm or less, the concentration of ozone generated in the space between the central portion 43a and the upper surface Wu of the substrate W increases. Therefore, a high concentration of ozone can be supplied to the peripheral portion Wp of the substrate W.

[0049] A plurality of reflection members 44 are respectively located between the corresponding light sources 42 and the top wall of the housing 41. The reflection member 44 may also extend along the extending direction (X direction) of the light source 42. The cross-sectional shape of the reflection member 44 is arc-shaped (for example, circular arc-shaped, elliptical arc-shaped, bow-shaped, etc.) and may be recessed toward the top wall of the housing 41. The reflection member 44 is configured to be able to reflect the energy line irradiated from the light source 42 toward the top wall side of the housing 41 toward the window portion 43. The reflected light reflected by the reflection member 44 is irradiated toward the upper surface Wu of the substrate W through the window portion 43.

[0050] The gas supply unit 50 is configured to be able to supply an inert gas (for example, nitrogen, argon, etc.) into the housing 41. The inside of the housing 41 is filled with the inert gas, thereby being able to suppress the attenuation of the energy line irradiated from the light source 42 inside the housing 41. The gas supply unit 50 may also be configured to be able to supply a gas selected according to the wavelength of the energy line irradiated from the light source 42 into the housing 41.

[0051] The gas supply unit 50 includes a supply source 51, a supply pipe 52, a pipe 53, a valve 54, and an exhaust pipe 55. The supply source 51 is configured to store an inert gas. The supply pipe 52 is connected to the housing 41 and communicates with the inside of the housing 41. The pipe 53 connects the supply source 51 and the supply pipe 52. Accordingly, the inert gas from the supply source 51 is supplied into the housing 41 through the pipe 53 and the supply pipe 52. The valve 54 is provided in the pipe 53 and is configured to be opened and closed based on an operation signal from the controller Ctr. The exhaust pipe 55 is connected to the housing 41 and communicates with the inside of the housing 41. Accordingly, the inert gas supplied into the housing 41 is discharged to the outside of the housing 41 through the exhaust pipe 55.

[0052] The gas supply unit 60 is configured to supply an oxygen-containing gas to the space V between the window portion 43 and the upper surface Wu of the substrate W. The oxygen-containing gas may be air or dry air (air that does not contain water vapor and carbon dioxide).

[0053] The gas supply unit 60 includes a supply source 61 (gas source), at least one supply pipe 62 (flow path), a pipe 63 (flow path), and a valve 64. The supply source 61 is configured to store an oxygen-containing gas. At least one supply pipe 62 penetrates the housing 41 and the window portion 43 from the top wall of the housing 41 to the central portion 43a of the window portion 43 and communicates with the space V. The pipe 63 connects the supply source 61 and at least one supply pipe 62. That is, when there are a plurality of supply pipes 62, the pipe 63 branches into a plurality of branches in the middle and is connected to each supply pipe 62. Accordingly, the oxygen-containing gas from the supply source 61 is supplied into the space V through the pipe 63 and the supply pipe 62. The valve 64 is provided in the pipe 63 and is configured to be opened and closed based on an operation signal from the controller Ctr.

[0054] When the wavelength of the energy ray irradiated from the light source 42 is ultraviolet light of 185 nm or less, oxygen in the oxygen-containing gas supplied to the space V reacts with the ultraviolet light to generate ozone. The generated ozone flows from the space V toward the peripheral portion Wp of the substrate W. Then, when the ozone passes through the gap between the peripheral portion 43b of the window portion 43 and the upper surface Wu of the substrate W, the protective film at the peripheral portion Wp of the substrate W reacts with the ozone, and the protective film is etched. Alternatively, when the oxygen-containing gas supplied to the space V flows from the space V toward the peripheral portion Wp of the substrate W, ozone is generated by the reaction of the ultraviolet light with the peripheral portion Wp of the substrate W. Then, the protective film at the peripheral portion Wp of the substrate W reacts with the ozone, and the protective film is etched. In addition, it may be that the supply source 61 stores ozone gas, and the protective film at the peripheral portion Wp of the substrate W is etched with the ozone supplied from the supply source 61.

[0055] The peripheral heating unit 70 is configured to be able to heat the peripheral portion Wp of the substrate W. The peripheral heating unit 70 may also be configured to be able to heat the peripheral portion Wp of the substrate W to 400 °C or higher. The peripheral heating unit 70 may be substantially arc-shaped or substantially annular so as to surround the peripheral portion Wp of the substrate W from the outside. Here, the substantially arc-shaped peripheral heating unit 70 may include a major arc-shaped peripheral heating unit 70 that surrounds most of the peripheral portion Wp of the substrate W from the outside but is interrupted at a part. The substantially arc-shaped peripheral heating unit 70 may also include a plurality of arc-shaped peripheral heating units 70 that partially surround the peripheral portion Wp of the substrate W from the outside and are arranged along the peripheral portion Wp of the substrate W in a substantially circular shape as a whole. The substantially annular peripheral heating unit 70 may also include an annular (endless) peripheral heating unit 70 that surrounds the entire peripheral portion Wp of the substrate W from the outside. The peripheral heating unit 70 includes a heating source 71 and a reflection member 72.

[0056] The heating source 71 may also be an infrared lamp that heats the peripheral portion Wp of the substrate W by irradiating light on the peripheral portion Wp of the substrate W. It is known that generally, when locally heating a part of an object and not wishing to heat other parts, under the condition of providing the same energy, compared with continuous heating, when energy is instantaneously provided in the shortest possible time, the heat diffusion to the local periphery is small. Therefore, the heating source 71 may also intermittently irradiate light on the peripheral portion Wp of the substrate W based on the FLA method (Flash Lamp Anneal), thereby heating the peripheral portion Wp. In this case, the light may be intermittently irradiated on the peripheral portion Wp of the substrate W such that the irradiation time of irradiating light on the peripheral portion Wp of the substrate W once is 1 millisecond to 1 second and the light irradiation interval is 10 seconds or more. The heating source 71 may also intermittently irradiate light on the peripheral portion Wp of the substrate W based on the spike RTA method (Rapid Thermal Anneal). In addition, when the temperature of the inside other than the peripheral portion Wp of the substrate W can be increased by the heating of the heating source 71 (even when the heat diffusion is large and the influence is small), the heating source 71 may continuously irradiate infrared rays on the peripheral portion Wp of the substrate W.

[0057] The reflecting member 72 has a substantially U-shaped cross section so as to cover the periphery of the heating source 71. That is, the reflecting member 72 includes an opening 72a that opens inward. The opening 72a faces the end face of the peripheral portion Wp of the substrate W in a state where the substrate W is held by the rotary holding portion 10. The reflecting member 72 is configured to reflect the light irradiated from the heating source 71 toward the back side of the reflecting member 72 (the wall surface side of the reflecting member 72 opposite to the opening 72a) toward the opening 72a side. The light reflected by the reflecting member 72 is irradiated toward the peripheral portion Wp of the substrate W through the opening 72a. Therefore, the peripheral portion Wp of the substrate W is heated more intensively.

[0058] The reflecting member 80 is located at a position overlapping the peripheral portion 43b of the window portion 43 when viewed from above. The reflecting member 80 may also be substantially arc-shaped or substantially ring-shaped so as to surround the peripheral portion Wp of the substrate W from the outside below the peripheral portion Wp of the substrate W. Here, the substantially arc-shaped reflecting member 80 may also include a major arc-shaped reflecting member 80 that surrounds most of the peripheral portion Wp of the substrate W from the outside but is interrupted in part. The substantially arc-shaped reflecting member 80 may also include a plurality of arc-shaped reflecting members 80 that partially surround the peripheral portion Wp of the substrate W from the outside and are arranged along the peripheral portion Wp of the substrate W in a substantially circular shape as a whole. The substantially ring-shaped reflecting member 80 may also include a ring-shaped (endless) reflecting member 80 that surrounds the entire peripheral portion Wp of the substrate W from the outside.

[0059] The reflecting member 80 is configured to reflect the energy lines that have passed outside the peripheral portion Wp of the substrate W among the energy lines irradiated from the irradiation unit 40 toward the peripheral portion Wp of the substrate W. The reflecting member 80 may also be configured to, for example, reflect the reflected energy lines mainly toward the lower surface Wl and / or the end face We of the peripheral portion Wp of the substrate W.

[0060] [Details of the controller]

[0061] As Figure 4 Illustrated, the controller Ctr has a reading unit M1, a storage unit M2, a processing unit M3, and an instruction unit M4 as functional modules. These functional modules are only for convenience to divide the functions of the controller Ctr into multiple modules, and do not necessarily mean that the hardware constituting the controller Ctr is divided into such modules. Each functional module is not limited to being implemented by executing a program, and may also be implemented by a dedicated circuit (such as a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) obtained by integrating them.

[0062] The reading unit M1 is configured to be able to read a program from a computer-readable recording medium RM. The recording medium RM stores a program for operating each part of the substrate processing system 1 including the etching unit U3. The recording medium RM can be, for example, a semiconductor memory, an optical disc, a magnetic disk, or an optical magnetic disk. In addition, hereinafter, each part of the substrate processing system 1 may include a rotation driving unit 12, a central heating unit 13, a lifting unit 30, a light source 42, valves 54 and 64, and a heating source 71.

[0063] The storage unit M2 is configured to be able to store various data. The storage unit M2 can also store, for example, a program read from the recording medium RM in the reading unit M1, setting data input by an operator via an external input device (not shown), and the like.

[0064] The processing unit M3 is configured to be able to process various data. The processing unit M3 can also generate, for example, signals for operating each part of the substrate processing system 1 based on various data stored in the storage unit M2.

[0065] The instruction unit M4 is configured to be able to send the operation signals generated in the processing unit M3 to each part of the substrate processing system 1.

[0066] The hardware of the controller Ctr can be constituted by, for example, one or more control computers. As Figure 5 shown, the controller Ctr can also include a circuit C1 as a hardware structure. The circuit C1 can be constituted by circuitry. The circuit C1 can also include, for example, a processor C2, a memory C3, a storage C4, a driver C5, and an input / output port C6.

[0067] The processor C2 can also be configured to be able to execute a program in cooperation with at least one of the memory C3 and the storage C4, and perform input / output of signals via the input / output port C6, thereby implementing the above-described functional modules. The memory C3 and the storage C4 can function as the storage unit M2. The driver C5 can also be a circuit configured to be able to drive each part of the substrate processing system 1 respectively. The input / output port C6 can also be configured to be able to relay input / output of signals between the driver C5 and each part of the substrate processing system 1.

[0068] The substrate processing system 1 may include a controller Ctr, or may include a controller group (control unit) composed of a plurality of controllers Ctr. When the substrate processing system 1 includes a controller group, the above functional modules may be implemented by one controller Ctr respectively, or may be implemented by a combination of two or more controllers Ctr. When the controller Ctr is composed of a plurality of computers (circuit C1), the above functional modules may be implemented by one computer (circuit C1) respectively, or may be implemented by a combination of two or more computers (circuit C1). The controller Ctr may also have a plurality of processors C2. In this case, the above functional modules may be implemented by one processor C2 respectively, or may be implemented by a combination of two or more processors C2.

[0069] [Function]

[0070] According to the above example, an energy beam with a relatively high energy having a wavelength of 185 nm or less is irradiated onto the upper surface Wu of the substrate W, so that the bonds between atoms constituting the film formed on the peripheral portion Wp of the substrate W can be easily broken. In addition, since an oxygen-containing gas or an ozone gas is supplied to the peripheral portion Wp of the substrate W, there is a tendency that the atoms broken by the energy beam do not re-bond but bond with oxygen atoms. Moreover, since the peripheral portion Wp of the substrate W is heated, there is a tendency that the bonds between atoms caused by the energy beam are broken and the bonding between oxygen atoms and the atoms broken by the energy beam is activated. Based on the above, it is possible to etch a film with a relatively high hardness formed on the peripheral portion Wp of the substrate W at a relatively high etching rate without using plasma.

[0071] According to the above example, it can be set that the linear distance between the peripheral portion 43b of the window portion 43 and the upper surface Wu of the substrate W is smaller than the linear distance between the central portion 43a of the window portion 43 and the upper surface Wu of the substrate W. In this case, since the linear distance between the central portion 43a of the window portion 43 and the upper surface Wu of the substrate W becomes relatively large, the energy beam is significantly attenuated before reaching the upper surface Wu of the central portion Wc of the substrate W, and the film at the central portion Wc of the substrate W is not easily etched. On the other hand, since the linear distance between the peripheral portion 43b of the window portion 43 and the upper surface Wu of the substrate W is relatively small, the energy beam is not easily attenuated before reaching the upper surface Wu of the peripheral portion Wp of the substrate W, and the etching of the film at the peripheral portion Wp of the substrate W is promoted. Therefore, it is possible to concentrate on etching the film at the peripheral portion Wp of the substrate W.

[0072] According to the above example, an oxygen-containing gas or an ozone gas can be supplied through the supply pipe 62 and the pipe 63 to the space V between the window portion 43 and the upper surface Wu of the substrate W. In this case, the oxygen-containing gas or the ozone gas supplied to the space V flows toward the peripheral portion Wp of the substrate W. Therefore, the oxygen-containing gas or the ozone gas is supplied to the peripheral portion Wp of the substrate W substantially uniformly. Therefore, the film of the peripheral portion Wp of the substrate W can be etched substantially uniformly at a relatively high etching rate.

[0073] According to the above example, the reflection member 80 is configured to be able to reflect the energy rays passing through the outside of the peripheral portion Wp of the substrate W among the energy rays irradiated from the irradiation portion 40 toward the peripheral portion Wp of the substrate W. In this case, the reflected light of the energy rays from the reflection member 80 is irradiated onto the lower surface Wl and / or the end surface We of the peripheral portion Wp of the substrate W. Therefore, the film formed from the upper surface Wu to the lower surface Wl in the peripheral portion Wp of the substrate W can be etched substantially simultaneously.

[0074] According to the above example, it may be that the peripheral heating portion 70 is configured to be able to heat the peripheral portion Wp of the substrate W to 400°C or higher, and the central heating portion 13 is configured to be able to heat the central portion Wc of the substrate W to 400°C or lower. In this case, since the peripheral portion Wp of the substrate W is heated to 400°C or higher, there is a tendency for the cutting of the bonds between atoms caused by the energy rays and the activation of the bonds between oxygen atoms and the atoms cut by the energy rays to be more active. On the other hand, since the central portion Wc of the substrate W is heated to 400°C or lower, the temperature difference between the peripheral portion Wp and the central portion Wc of the substrate W becomes smaller, and warping of the substrate W is not likely to occur. Therefore, in combination with the fact that the heating amount of the central portion Wc of the substrate W is relatively low, the electronic components formed in the central portion Wc of the substrate W are not easily damaged. Thus, damage to the electronic components formed in the central portion Wc of the substrate W can be suppressed, and the film of the peripheral portion Wp of the substrate W can be etched at a relatively high etching rate.

[0075] According to the above example, the substrate W can be rotated by the rotation holding portion 10. In this case, while the substrate W is rotating, heating of the peripheral portion Wp of the substrate W and irradiation of energy rays are performed. Therefore, heating and irradiation of energy rays can be performed substantially uniformly over the entire circumference of the peripheral portion Wp of the substrate W. Therefore, the film of the peripheral portion Wp of the substrate W can be etched substantially uniformly at a relatively high etching rate.

[0076] According to the above example, the peripheral heating unit 70 can be configured to heat the peripheral portion Wp of the substrate W by irradiating light on the peripheral portion Wp of the substrate W. In this case, there is a tendency that the surface of the peripheral portion Wp of the substrate W is particularly heated while the central portion Wc and the deep portion of the substrate W are difficult to be heated. Therefore, etching at the peripheral portion Wp of the substrate W is promoted, and electronic components formed in the central portion Wc of the substrate W are not easily damaged. Therefore, damage to the electronic components formed in the central portion Wc of the substrate W can be suppressed, and the film of the peripheral portion Wp of the substrate W can be etched at a relatively high etching rate.

[0077] According to the above example, the peripheral heating unit 70 can be configured to heat the peripheral portion Wp of the substrate W by intermittently irradiating light on the peripheral portion Wp of the substrate W. In this case, the tendency that the surface of the peripheral portion Wp of the substrate W is heated while the central portion Wc and the deep portion of the substrate W are not easily heated becomes more significant. Therefore, damage to the electronic components formed in the central portion Wc of the substrate W can be further suppressed, and the film of the peripheral portion Wp of the substrate W can be etched at a higher etching rate.

[0078] According to the above example, it can be set that the irradiation time for irradiating light on the peripheral portion Wp of the substrate W once is 1 millisecond to 1 second, and the irradiation interval of the light is 10 seconds or more. In this case, the surface of the peripheral portion Wp of the substrate W is heated, and the tendency that the central portion Wc and the deep portion of the substrate W are not easily heated becomes more significant. Therefore, damage to the electronic components formed in the central portion Wc of the substrate W can be further suppressed, and the film of the peripheral portion Wp of the substrate W can be etched at a higher etching rate.

[0079] [Modification Example]

[0080] It should be considered that the disclosure in this specification is illustrative in all aspects and not restrictive. Various omissions, substitutions, changes, etc. can be made to the above examples without departing from the present invention and its gist.

[0081] (1) As Figure 6As illustrated, the etching unit U3 may also have an irradiation unit 90 and a peripheral heating unit 100 instead of the irradiation unit 40. In a state where the substrate W is held by the rotary holding unit 10, the irradiation unit 90 is disposed on the side of the substrate W. The irradiation unit 90 may be substantially arc-shaped or substantially ring-shaped so as to surround the peripheral portion Wp of the substrate W from the outside. Here, the substantially arc-shaped irradiation unit 90 may include a major arc-shaped irradiation unit 90 that surrounds most of the peripheral portion Wp of the substrate W from the outside but is interrupted in part. The substantially arc-shaped irradiation unit 90 may also include a plurality of arc-shaped irradiation units 90 that partially surround the peripheral portion Wp of the substrate W from the outside and are arranged along the peripheral portion Wp of the substrate W in a manner that is substantially circular as a whole. The substantially ring-shaped irradiation unit 90 may also include a ring-shaped (endless) irradiation unit 90 that surrounds the entire peripheral portion Wp of the substrate W from the outside. The irradiation unit 90 includes a light source 91, a reflection member 92, and a window portion 93.

[0082] The light source 91 is configured to be able to operate based on an operation signal from the controller Ctr and irradiate the peripheral portion Wp of the substrate W with an energy line for etching having a wavelength of 185 nm or less. The light source 91 may be substantially arc-shaped or substantially ring-shaped so as to surround the peripheral portion Wp of the substrate W from the outside. Here, the substantially arc-shaped light source 91 may include a major arc-shaped light source 91 that surrounds most of the peripheral portion Wp of the substrate W from the outside but is interrupted in part. The substantially arc-shaped light source 91 may also include a plurality of arc-shaped light sources 91 that partially surround the peripheral portion Wp of the substrate W from the outside and are arranged along the peripheral portion Wp of the substrate W in a manner that is substantially circular as a whole. The substantially ring-shaped irradiation unit 90 may also include a ring-shaped (endless) light source 91 that surrounds the entire peripheral portion Wp of the substrate W from the outside.

[0083] The reflection member 92 has a substantially U-shaped cross-section so as to cover the periphery of the light source 91. That is, the reflection member 92 includes an opening 92a that opens inward. In a state where the substrate W is held by the rotary holding unit 10, the opening 92a faces the end surface We of the peripheral portion Wp of the substrate W. The reflection member 92 is configured to be able to reflect the light irradiated from the light source 91 toward the back side of the reflection member 92 (the side of the wall surface of the reflection member 92 opposite to the opening 92a) toward the opening 92a side. The light reflected by the reflection member 92 is irradiated toward the peripheral portion Wp of the substrate W through the opening 92a. Therefore, in cooperation with the energy line irradiated from the irradiation unit 40, the peripheral portion Wp of the substrate W is irradiated with the energy line more intensively. In this case, it is possible to more easily cut the bonds between the atoms constituting the film. Therefore, a higher etching rate can be obtained.

[0084] The window portion 93 is installed in the opening 92a of the sealing reflection member 92 so as to seal the opening 92a. Accordingly, the airtightness inside the reflection member 92 is maintained. In the internal space formed by the reflection member 92 and the window portion 93, an inert gas (e.g., nitrogen) can also be enclosed, for example. As the material of the window portion 93, the same material as that of the window portion 43 can also be selected. The linear distance between the surface of the window portion 93 and the end face We of the substrate W can also be set to about 1 mm.

[0085] The peripheral heating unit 100 is configured to be able to heat the peripheral portion Wp of the substrate W. The peripheral heating unit 100 can also be configured to be able to heat the peripheral portion Wp of the substrate W to 400° C. or higher, similarly to the peripheral heating unit 70. The peripheral heating unit 100 can also be substantially arc-shaped or substantially ring-shaped. The peripheral heating unit 100 can also be located at a position overlapping the peripheral portion Wp of the substrate W when viewed from above and above the peripheral portion Wp of the substrate W. Here, the substantially arc-shaped peripheral heating unit 100 can also include a major arc-shaped peripheral heating unit 100 with a part interrupted. The substantially arc-shaped peripheral heating unit 100 can also include a plurality of arc-shaped peripheral heating units 100 arranged along the peripheral portion Wp of the substrate W so as to be substantially circular as a whole. The substantially ring-shaped peripheral heating unit 100 can also include a ring-shaped (endless) peripheral heating unit 100. The peripheral heating unit 100 includes a heating source 101 and a reflection member 102.

[0086] The heating source 101 can also be an infrared lamp that heats the peripheral portion Wp of the substrate W by irradiating light onto the peripheral portion Wp of the substrate W, similarly to the heating source 71.

[0087] The reflection member 102 has a substantially U-shaped cross section so as to cover the periphery of the heating source 101. That is, the reflection member 102 includes an opening 102a that opens inward. The opening 102a faces the upper surface Wu of the peripheral portion Wp of the substrate W when the substrate W is held by the rotation holding portion 10. The reflection member 102 is configured to be able to reflect the light irradiated from the heating source 101 toward the back side of the reflection member 102 (the wall surface side of the reflection member 102 opposite to the opening 102a side) toward the opening 102a side. The light reflected by the reflection member 102 is irradiated toward the peripheral portion Wp of the substrate W through the opening 102a. Accordingly, the peripheral portion Wp of the substrate W is heated more intensively.

[0088] The wall portion 102b on the center side of the substrate W in the reflection member 102 may also extend near the upper surface Wu of the substrate W. That is, the linear distance (spacing distance) between the lower end of the wall portion 102b and the upper surface Wu of the substrate W may be set to about 1 mm, for example. The wall portion 102b on the center side of the substrate W in the reflection member 102 may also be located at a position about 3 mm to 5 mm inward from the end face We of the substrate W.

[0089] In this way, since the lower end of the wall portion 102b is located near the upper surface Wu of the substrate W, the light irradiated toward the peripheral portion Wp of the substrate W through the opening 102a of the reflection member 102 is blocked by the wall portion 102b and is difficult to reach a position closer to the center side of the substrate W than the wall portion 102b. Therefore, the peripheral portion Wp of the substrate W is etched more intensively.

[0090] As described above, according to Figure 6 the exemplified manner, the irradiation unit 90 can extend substantially in an arc shape or a substantially circular shape along the peripheral portion Wp of the substrate W. In this case, the energy lines can be irradiated substantially uniformly over the entire circumference of the peripheral portion Wp of the substrate W from the irradiation unit 90. Therefore, the film of the peripheral portion Wp of the substrate W can be etched substantially uniformly at a relatively high etching rate.

[0091] According to Figure 6 the exemplified manner, the irradiation unit 90 includes a plurality of light sources 91 that extend in an arc shape along the peripheral portion Wp of the substrate W and are arranged substantially in a circle as a whole along the peripheral portion Wp of the substrate W, and the substrate W can be rotated by the rotation holding unit 10. In this case, the substrate W rotates, and the plurality of light sources 91 scattered along the peripheral portion Wp of the substrate W irradiate the energy lines toward the peripheral portion Wp of the substrate W. Therefore, the energy lines can be irradiated substantially uniformly over the entire circumference of the peripheral portion Wp of the substrate W from the plurality of light sources 91. Therefore, the film of the peripheral portion Wp of the substrate W can be etched substantially uniformly at a relatively high etching rate.

[0092] In addition, as Figure 6 exemplified, the peripheral heating unit 70 may also be located at a position overlapping the peripheral portion Wp of the substrate W when viewed from above and below the peripheral portion Wp of the substrate W. That is, the peripheral heating unit 70 may also be located between the rotation holding unit 10 and the irradiation unit 90.

[0093] (2) As Figure 7As illustrated, the etching unit U3 may also have an irradiation unit 90 and a light-shielding unit 110 instead of the irradiation unit 40. The irradiation unit 90 is disposed above the peripheral portion Wp of the substrate W in a state where the substrate W is held by the rotary holding unit 10. The irradiation unit 90 may be substantially arc-shaped or substantially ring-shaped. Here, the substantially arc-shaped irradiation unit 90 may include a major arc-shaped irradiation unit 90 with a part interrupted. The substantially arc-shaped irradiation unit 90 may include a plurality of arc-shaped irradiation units 90, and the plurality of arc-shaped irradiation units 90 are arranged along the peripheral portion Wp of the substrate W in a manner that the whole is substantially circular. The substantially ring-shaped irradiation unit 90 may include a ring-shaped (endless) irradiation unit 90. The irradiation unit 90 includes a light source 91, a reflection member 92, and a window portion 93.

[0094] Figure 7 The illustrated irradiation unit 90 may also be of the same structure as Figure 6 the illustrated irradiation unit 90. Among the energy lines irradiated from the irradiation unit 90, the energy lines passing outside the peripheral portion Wp of the substrate W are reflected by the reflection member 80 toward the lower surface Wl and / or the end surface We of the peripheral portion Wp of the substrate W.

[0095] The light-shielding unit 110 includes a light-shielding member 111 and a light-shielding member 112. The light-shielding member 111 may be, for example, cylindrical. The light-shielding member 111 is located above the substrate W in a state where the substrate W is held by the rotary holding unit 10. The upper end of the light-shielding member 111 may be connected to the wall portion on the center side of the substrate W in the reflection member 92. The light-shielding member 111 may extend to the vicinity of the upper surface Wu of the substrate W. That is, the linear distance (spacing distance) between the lower end of the light-shielding member 111 and the upper surface Wu of the substrate W may be set to about 1 mm, for example. The light-shielding member 111 may be located at a position about 3 mm to 5 mm inward from the end surface We of the substrate W.

[0096] Thus, since the lower end of the light-shielding member 111 is located in the vicinity of the upper surface Wu of the substrate W, the light irradiated toward the peripheral portion Wp of the substrate W through the opening 92a of the reflection member 92 is blocked by the light-shielding member 111 and hardly reaches the position on the center side of the substrate W beyond the light-shielding member 111. Therefore, the peripheral portion Wp of the substrate W is etched more intensively.

[0097] The light-shielding member 112 may be, for example, cylindrical. The light-shielding member 112 is located below the substrate W in a state where the substrate W is held by the rotary holding unit 10. The light-shielding member 112 may extend to the vicinity of the lower surface W1 of the substrate W. That is, the linear distance (spacing distance) between the upper end of the light-shielding member 112 and the lower surface W1 of the substrate W may be set to about 1 mm, for example. The light-shielding member 112 may be located at a position about 2 mm to 4 mm inward from the end surface We of the substrate W.

[0098] Thus, the upper end of the light-shielding member 112 is located near the lower surface W1 of the substrate W. Therefore, the light reflected by the reflecting member 80 is blocked by the light-shielding member 112 and hardly reaches a position closer to the center side of the substrate W than the light-shielding member 112. Accordingly, the peripheral portion Wp of the substrate W is etched more intensively.

[0099] (3) Figure 6 and Figure 7 each example may further include Figure 3 the illustrated irradiation unit 40.

[0100] (4) In Figure 3 、 Figure 6 and Figure 7 each example, in addition to or instead of supplying an oxygen-containing gas or an ozone gas to the space V through the supply pipe 62 and the pipe 63, an oxygen-containing gas or an ozone gas may be supplied to the peripheral portion Wp of the substrate W from the outside. For example, an oxygen-containing gas or an ozone gas may be supplied from the outside to the inside of the etching unit U3 by using a blower unit provided on the upper portion (e.g., the top wall) of the etching unit U3.

[0101] [Experimental Example]

[0102] Hereinafter, several experimental results are given to explain the content of the present technology in more detail, but the present invention and its gist are not limited to the following experimental results.

[0103] In the following experimental examples, two test pieces having protective films A and B made of different types of amorphous carbon provided on their surfaces, respectively, were prepared. The test pieces were obtained by cutting the substrate W into small pieces. In addition, the hardness of the protective film A is smaller (softer than the protective film B).

[0104] In addition, in the following experimental examples, different from Figure 3 the illustrated etching unit U3, an etching unit with a flat window portion 43 was used. In addition, this etching unit does not include the peripheral heating unit 70, and the test piece held by the holding unit 11 is heated to a predetermined temperature by the central heating unit 13.

[0105] (Experimental Example 1)

[0106] With the distance (linear distance) between the window portion 43 and the upper surface of the test piece set to 1.2 mm, each test piece was placed on the rotary holding unit 10, and while supplying dry air to the space between the window portion 43 and the rotary holding unit 10, ultraviolet light with a wavelength of 172 nm was irradiated from the irradiation unit 40 onto the surface of the test piece. At this time, the test pieces were heated so that the test pieces became different temperatures (150 °C, 200 °C, 250 °C, 300 °C, 350 °C, 400 °C). The results are shown in Figure 8 (a). In addition, Figure 8(a) is a semi-logarithmic graph with the vertical axis in logarithmic scale.

[0107] As Figure 8 shown in (a), it was confirmed that the higher the temperature of the test piece, the greater the etching rate. Especially when the temperature of the test piece was 400 °C, the etching rate of protective film A was 588.6 nm / min, and the etching rate of protective film B was 274.5 nm / min, resulting in a very high etching rate.

[0108] (Experimental Example 2)

[0109] In Experimental Example 2, the distance (linear distance) between the window portion 43 and the upper surface of the test piece was set to 2.2 mm, and the test piece was treated in the same manner as in Experimental Example 1 except for this. The results are shown in Figure 8 (b). Additionally, Figure 8 (b) is a semi-logarithmic graph with the vertical axis in logarithmic scale. As Figure 8 shown in (b), in Experimental Example 2 as well as in Example 1, it was confirmed that the higher the temperature of the test piece, the greater the etching rate.

[0110] (Experimental Example 3)

[0111] In Experimental Example 3, the distance (linear distance) between the window portion 43 and the upper surface of the test piece was set to 3.2 mm, and the test piece was treated in the same manner as in Experimental Example 1 except for this. The results are shown in Figure 9 (a). Additionally, Figure 9 (a) is a semi-logarithmic graph with the vertical axis in logarithmic scale. As Figure 9 shown in (a), in Experimental Example 3 as well as in Experimental Example 1, it was confirmed that the higher the temperature of the test piece, the greater the etching rate.

[0112] Here, the relationship between the distance and the etching rate when the test piece was heated at 400 °C is shown in Figure 10 (a). As Figure 10 shown in (a), it was confirmed that in either case of protective films A and B, the smaller the distance, the greater the etching rate. Additionally, in Figure 10 (b), the relationship between the ultraviolet irradiation time and the etching amount when the test piece was heated at 300 °C with the distance set to 1.2 mm is shown. As Figure 10 shown in (b), it was confirmed that in either case of protective films A and B, the etching amount is approximately proportional to the ultraviolet irradiation time.

[0113] (Experimental Example 4)

[0114] In Experimental Example 4, the test piece was not irradiated with ultraviolet rays from the irradiation unit 40, and the test piece was heated so that the test piece reached different temperatures (400 °C, 450 °C, 500 °C, 550 °C, 600 °C). Except for this, the substrate W was treated in the same manner as in Experimental Example 1. That is, the test piece was heated in an atmosphere of dry air, and the protective films A and B were etched. The results are shown in Figure 9 of (b). Additionally, Figure 9 of (b) is a semi-logarithmic graph with the vertical axis represented logarithmically. As shown in Figure 9 of (b), it was confirmed that the higher the temperature of the test piece, the greater the etching rate, but the etching rate decreased significantly compared to the cases of Experimental Examples 1 to 3.

[0115] (Experimental Example 5)

[0116] In Experimental Example 5, the test piece was irradiated with ultraviolet rays from the irradiation unit 40 in a state where the region of the window portion 43 facing the test piece was shielded from light, and the test piece was heated so that the test piece reached 400 °C. Except for this, the test piece was treated in the same manner as in Experimental Example 1. That is, the test piece was not directly irradiated with ultraviolet rays, and the test piece was heated in an atmosphere of ozone gas, and the protective films A and B were etched. The results are shown in Figure 11 of (a). As shown in Figure 11 of (a), it was confirmed that a large etching rate could be obtained in an atmosphere of ozone gas compared to the result of treating the test piece at 400 °C in Experimental Example 4.

[0117] (Experimental Examples 6 and 7)

[0118] In Experimental Example 6, the distance (linear distance) between the window portion 43 and the upper surface of the test piece was set to 1.4 mm, and the test piece was heated so that the test piece reached 250 °C. Except for this, the test piece was treated in the same manner as in Experimental Example 1. In Experimental Example 7, except that nitrogen gas was supplied to the space between the window portion 43 and the rotation holding portion 10, the test piece was treated in the same manner as in Experimental Example 6. That is, in Experimental Example 7, the test piece was heated in an atmosphere of nitrogen gas, and the protective films A and B were etched. The results are shown in Figure 11 of (b). As shown in Figure 11 of (a), it was confirmed that the etching of the protective films A and B hardly progressed in an atmosphere of nitrogen gas.

[0119] [Other Examples]

[0120] Example 1. An example of a substrate processing apparatus includes: a peripheral heating unit that heats a peripheral portion of a substrate; an irradiation unit that is disposed above an upper surface of the substrate and configured to be able to irradiate an energy line for etching having a wavelength of 185 nm or less toward the upper surface of the substrate; and a supply unit that is configured to be able to supply an oxygen-containing gas or an ozone gas to the peripheral portion of the substrate. The peripheral heating unit extends substantially in an arc shape or a substantially circular shape along the peripheral portion of the substrate. The irradiation unit includes: a plurality of light sources that extend along a predetermined first direction parallel to the upper surface of the substrate and are arranged along a second direction parallel to the upper surface of the substrate and orthogonal to the first direction; a housing that is configured to be able to accommodate the plurality of light sources therein; and a window portion that is provided on a bottom wall of the housing and is configured to be able to transmit the energy line. In this case, since an energy line having a relatively high energy with a wavelength of 185 nm or less is irradiated onto the upper surface of the substrate, it is possible to easily cut the bonds between the atoms constituting the film formed on the peripheral portion of the substrate. In addition, since an oxygen-containing gas or an ozone gas is supplied to the peripheral portion of the substrate, there is a tendency that the atoms cut by the energy line do not re-bond but bond with oxygen atoms. Furthermore, since the peripheral portion of the substrate is heated, there is a tendency that the cutting of the bonds between the atoms caused by the energy line and the bonding activation of the oxygen atoms and the atoms cut by the energy line are activated. Based on the above, it is possible to etch a film having a relatively high hardness formed on the peripheral portion of the substrate at a relatively high etching rate without using plasma.

[0121] Example 2. The apparatus of Example 1 may further include another irradiation unit that is configured to be able to irradiate another energy line for etching having a wavelength of 185 nm or less toward the peripheral portion of the substrate. In this case, since the peripheral portion of the substrate is further irradiated with another energy line, it is possible to more easily cut the bonds between the atoms constituting the film. Therefore, a higher etching rate can be obtained.

[0122] Example 3. In the apparatus of Example 2, it may be that the other irradiation unit extends substantially in an arc shape or a substantially circular shape along the peripheral portion of the substrate. In this case, it is possible to irradiate the other energy line substantially uniformly over the entire circumference of the peripheral portion of the substrate. Therefore, it is possible to etch the film on the peripheral portion of the substrate substantially uniformly at a relatively high etching rate.

[0123] Example 4. It may also be that the apparatus of Example 2 further includes a rotation holding unit that is configured to be able to hold and rotate the substrate, and the other irradiation unit includes a plurality of other light sources that extend in an arc shape along the peripheral portion of the substrate and are arranged substantially in a circular shape along the entire peripheral portion of the substrate. In this case, the substrate rotates, and the plurality of other light sources scattered along the peripheral portion of the substrate irradiate the other energy line toward the peripheral portion of the substrate. Therefore, it is possible to irradiate the other energy line substantially uniformly over the entire circumference of the peripheral portion of the substrate. Therefore, it is possible to etch the film on the peripheral portion of the substrate substantially uniformly at a relatively high etching rate.

[0124] Example 5. In any of the devices of Examples 1 to 4, it is also possible that the window portion includes a first portion facing the central portion of the substrate and a second portion facing the peripheral portion of the substrate and having an annular shape. The second portion is located at a position lower than the first portion such that the linear distance between the second portion and the upper surface of the substrate is smaller than the linear distance between the first portion and the upper surface of the substrate. In this case, since the spacing distance (linear distance) between the first portion and the central portion of the substrate is relatively large, the energy line is significantly attenuated before reaching the upper surface of the central portion of the substrate, and the film at the central portion of the substrate is not easily etched. On the other hand, since the spacing distance (linear distance) between the second portion and the peripheral portion of the substrate is relatively small, the energy line is not easily attenuated before reaching the upper surface of the peripheral portion of the substrate, and the etching of the film at the peripheral portion of the substrate is promoted. Therefore, the film at the peripheral portion of the substrate can be etched intensively.

[0125] Example 6. In any of the devices of Examples 1 to 5, it is also possible that the supply portion includes: a flow path that extends through the housing and the window portion; and a gas source configured to be able to supply an oxygen-containing gas or an ozone gas between the window portion and the upper surface of the substrate via the flow path. In this case, the oxygen-containing gas or the ozone gas supplied between the window portion and the upper surface of the substrate through the flow path flows toward the peripheral portion of the substrate. Therefore, the oxygen-containing gas or the ozone gas is supplied substantially uniformly to the peripheral portion of the substrate. Therefore, the film at the peripheral portion of the substrate can be etched substantially uniformly at a relatively high etching rate.

[0126] Example 7. Any of the devices of Examples 1 to 6 may further include a reflection member configured to be able to reflect the energy line that has passed outside the peripheral portion of the substrate among the energy lines irradiated from the irradiation portion toward the peripheral portion of the substrate. In this case, the reflected light of the energy line from the reflection member is irradiated onto the lower surface and / or the end surface of the peripheral portion of the substrate. Therefore, the film formed from the upper surface to the lower surface in the peripheral portion of the substrate can be etched substantially simultaneously.

[0127] Example 8. Alternatively, any of the apparatuses in Examples 1 to 7 may further include a central heating unit configured to be able to heat the central portion of the substrate. The peripheral heating unit is configured to be able to heat the peripheral portion of the substrate to 400°C or higher, and the central heating unit is configured to be able to heat the central portion of the substrate to 400°C or lower. In this case, since the peripheral portion of the substrate is heated to 400°C or higher, there is a tendency for the bonds between atoms caused by the energy rays to be broken, and the bonding between oxygen atoms and the atoms broken by the energy rays to be more activated. On the other hand, since the central portion of the substrate is heated to 400°C or lower, the temperature difference between the peripheral portion and the central portion of the substrate becomes smaller, and warping of the substrate is less likely to occur. Therefore, combined with the fact that the heating amount of the central portion of the substrate is relatively low, the electronic components formed in the central portion of the substrate are not easily damaged. Based on the above, damage to the electronic components formed in the central portion of the substrate can be suppressed, and the film on the peripheral portion of the substrate can be etched at a relatively high etching rate.

[0128] Example 9. Any of the apparatuses in Examples 1 to 8 may further include a rotary holding unit configured to hold and rotate the substrate. In this case, while rotating the substrate, the peripheral portion of the substrate is heated and irradiated with energy rays. Therefore, heating and irradiation with energy rays can be performed substantially uniformly over the entire circumference of the peripheral portion of the substrate. Therefore, the film on the peripheral portion of the substrate can be etched substantially uniformly at a relatively high etching rate.

[0129] Example 10. In any of the apparatuses in Examples 1 to 9, alternatively, the peripheral heating unit may heat the peripheral portion of the substrate by irradiating light to the peripheral portion of the substrate. In this case, there is a tendency for the surface of the peripheral portion of the substrate to be particularly heated while the central portion and the deep portion of the substrate are difficult to be heated. Therefore, etching at the peripheral portion of the substrate is promoted, and the electronic components formed in the central portion of the substrate are not easily damaged. Therefore, damage to the electronic components formed in the central portion of the substrate can be suppressed, and the film on the peripheral portion of the substrate can be etched at a relatively high etching rate.

[0130] Example 11. In the apparatus of Example 10, alternatively, the peripheral heating unit may be configured to be able to heat the peripheral portion of the substrate by intermittently irradiating light to the peripheral portion of the substrate. In this case, the surface of the peripheral portion of the substrate is heated, and on the other hand, the tendency for the central portion and the deep portion of the substrate to be difficult to be heated becomes more significant. Therefore, damage to the electronic components formed in the central portion of the substrate can be further suppressed, and the film on the peripheral portion of the substrate can be etched at an even higher etching rate.

[0131] Example 12. In the apparatus of Example 11, it is also possible that the peripheral heating unit is configured to intermittently irradiate the peripheral portion of the substrate with light by irradiating the peripheral portion of the substrate with primary light for an irradiation time of 1 millisecond to 1 second and with a light irradiation interval of 10 seconds or more, thereby heating the peripheral portion of the substrate. In this case, the surface of the peripheral portion of the substrate is heated, while on the other hand, the tendency for the central portion and the deep portion of the substrate to be difficult to heat becomes more significant. Therefore, damage to the electronic components formed in the central portion of the substrate can be further suppressed, and the film on the peripheral portion of the substrate can be etched at a higher etching rate.

[0132] Description of Reference Numerals

[0133] 1... Substrate processing system (substrate processing apparatus); 10... Rotating holding unit; 13... Central heating unit; 40... Irradiation unit; 41... Housing; 42... Light source; 43... Window portion; 43a... Central portion (first part); 43b... Peripheral portion (second part); 60... Gas supply unit (supply unit); 61... Supply source (gas source); 62... Supply pipe (flow path); 63... Pipe (flow path); 70... Peripheral heating unit; 80... Reflective member; 90... Irradiation unit (other irradiation unit); Ctr... Controller (control unit); U3... Etching unit (substrate processing apparatus); V... Space; W... Substrate; Wc... Central portion; Wp... Peripheral portion; Wu... Upper surface; X... Direction (first direction); Y... Direction (second direction).

Claims

1. A substrate processing apparatus, characterized in that, comprising: a peripheral heating unit configured to heat a peripheral portion of the substrate; an irradiation unit disposed above an upper surface of the substrate and configured to irradiate an energy line for etching having a wavelength of 185 nm or less toward the upper surface of the substrate; and a supply unit configured to supply an oxygen-containing gas or an ozone gas to the peripheral portion of the substrate, wherein the peripheral heating unit extends substantially in an arc shape or a substantially circular shape along the peripheral portion of the substrate, the irradiation unit includes: a plurality of light sources extending along a predetermined first direction parallel to the upper surface of the substrate and arranged along a second direction parallel to the upper surface of the substrate and orthogonal to the first direction; a housing configured to accommodate the plurality of light sources therein; and a window portion provided on a bottom wall of the housing and configured to transmit the energy line.

2. The substrate processing apparatus according to claim 1, characterized in that: it further includes another irradiation unit configured to irradiate another energy line for etching having a wavelength of 185 nm or less toward the peripheral portion of the substrate.

3. The substrate processing apparatus according to claim 1, characterized in that: the window portion includes: a first portion opposite to a central portion of the substrate; and a second portion opposite to the peripheral portion of the substrate and in a circular shape, wherein the second portion is located at a position lower than the first portion such that a linear distance between the second portion and the upper surface of the substrate is less than a linear distance between the first portion and the upper surface of the substrate.

4. The substrate processing apparatus according to claim 1, characterized in that: the supply unit includes: a flow path extending through the housing and the window portion; and a gas source configured to supply an oxygen-containing gas or an ozone gas to a space between the window portion and the upper surface of the substrate via the flow path.

5. The substrate processing apparatus according to claim 1, characterized in that: it further includes a reflection member configured to reflect an energy line that has passed outside the peripheral portion of the substrate among the energy lines irradiated from the irradiation unit toward the peripheral portion of the substrate.

6. The substrate processing apparatus according to claim 1, characterized in that: it further includes a central heating unit configured to heat a central portion of the substrate, the peripheral heating unit is configured to heat the peripheral portion of the substrate to 400 °C or higher, the central heating unit is configured to heat the central portion of the substrate to 400 °C or lower.

7. The substrate processing apparatus according to claim 1, characterized in that: it further includes a rotation holding unit configured to hold and rotate the substrate.

8. The substrate processing apparatus according to any one of claims 1 to 7, characterized in that: the peripheral heating unit is configured to heat the peripheral portion of the substrate by irradiating light to the peripheral portion of the substrate.

9. The substrate processing apparatus according to claim 8, characterized in that: The peripheral heating unit is configured to heat the peripheral portion of the substrate by intermittently irradiating light to the peripheral portion of the substrate.

10. The substrate processing apparatus according to claim 9, wherein: the peripheral heating unit is configured to heat the peripheral portion of the substrate by intermittently irradiating light to the peripheral portion of the substrate in such a manner that the irradiation time of irradiating light to the peripheral portion of the substrate once is 1 millisecond to 1 second and the irradiation interval of the light is 10 seconds or more.

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